TWM535404U - Treating apparatus for photovoltaic device - Google Patents
Treating apparatus for photovoltaic device Download PDFInfo
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- TWM535404U TWM535404U TW105214094U TW105214094U TWM535404U TW M535404 U TWM535404 U TW M535404U TW 105214094 U TW105214094 U TW 105214094U TW 105214094 U TW105214094 U TW 105214094U TW M535404 U TWM535404 U TW M535404U
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- laser light
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- support frame
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- 238000002161 passivation Methods 0.000 claims description 30
- 230000007547 defect Effects 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 23
- 238000005286 illumination Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 description 19
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- -1 hydrogen ions Chemical class 0.000 description 9
- 239000002131 composite material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
Description
本揭露係關於一種用於光伏裝置之處理裝置，特別係關於一種可增加光伏裝置之效率的處理裝置。 The present disclosure relates to a processing apparatus for a photovoltaic device, and more particularly to a processing apparatus that increases the efficiency of a photovoltaic device.
近年來，隨著環保意識逐漸高漲，再生能源也日益受到重視。其中，光伏裝置(亦稱為太陽能電池)具有零污染以及取之不盡、用之不竭的優點，因而成為再生能源領域中受矚目的焦點。光伏裝置係基於光電效應，將光能轉換成電能之裝置。當光線照射於光伏裝置時，光伏裝置會吸收光能而產生自由的電子-電洞對，隨後電子電洞對分離並朝向光伏裝置的正極與負極移動，進而提供負載元件電能。 In recent years, as environmental awareness has gradually increased, renewable energy has also received increasing attention. Among them, photovoltaic devices (also known as solar cells) have the advantages of zero pollution and inexhaustible, and thus become the focus of attention in the field of renewable energy. Photovoltaic devices are devices that convert light energy into electrical energy based on the photoelectric effect. When light is applied to the photovoltaic device, the photovoltaic device absorbs light energy to create a free pair of electron-hole pairs, which are then separated and moved toward the positive and negative electrodes of the photovoltaic device to provide load element electrical energy.
然而，在電子與電洞移動至正極與負極的過程中，電子或電洞易受到光伏裝置之缺陷(defects)影響，使得電子與電洞產生複合(recombination)現象，從而降低光伏裝置的轉換效率。因此，如何提升光伏裝置的轉換效率，便成為一個重要的課題。 However, in the process of moving electrons and holes to the positive and negative electrodes, the electrons or holes are susceptible to defects of the photovoltaic device, causing recombination between the electrons and the holes, thereby reducing the conversion efficiency of the photovoltaic device. . Therefore, how to improve the conversion efficiency of photovoltaic devices has become an important issue.
本揭露提供一種用於光伏裝置之處理裝置，其可增加光伏裝置之轉換效率，且可減少光伏裝置之光致衰退現象。 The present disclosure provides a processing apparatus for a photovoltaic device that can increase the conversion efficiency of the photovoltaic device and can reduce the photoinduced degradation of the photovoltaic device.
依據本揭露之部分實施方式，一種用於光伏裝置之處理裝置包含光伏裝置放置區、支撐架與雷射光源組。支撐架係位於光伏裝置放置區上。雷射光源組係設置於支撐架之朝向光伏裝置放置區之一側，且雷射光源組係用以朝光伏裝置放置區發出雷射光。 In accordance with some embodiments of the present disclosure, a processing apparatus for a photovoltaic device includes a photovoltaic device placement zone, a support frame, and a laser source set. The support frame is located on the photovoltaic device placement area. The laser source set is disposed on one side of the support frame facing the photovoltaic device placement area, and the laser source set is used to emit laser light toward the photovoltaic device placement area.
依據本揭露之部分實施方式，一種用於光伏裝置之處理裝置包含光伏裝置放置區、支撐架與鈍化裝置。支撐架係位於光伏裝置放置區上。鈍化裝置係設置於支撐架之朝向光伏裝置放置區之一側，且鈍化裝置係用以提供能夠修補光伏裝置的雜質缺陷的光和熱。 According to some embodiments of the present disclosure, a processing apparatus for a photovoltaic device includes a photovoltaic device placement area, a support frame, and a passivation device. The support frame is located on the photovoltaic device placement area. The passivation device is disposed on one side of the support frame facing the photovoltaic device placement area, and the passivation device is used to provide light and heat capable of repairing impurity defects of the photovoltaic device.
於上述之多個實施方式中，處理裝置之鈍化裝置(或雷射光源組)可提供光伏裝置一高注入光束與足夠熱量。如此一來，光伏裝置在擴散製程中所遺留的氫(H)原子可獲得足夠的能量，而轉變為帶負電的氫離子(H-)。由於帶負電的氫離子(H-)容易與光伏裝置中帶正電的雜質結合，而形成較穩定的複合狀態。此較穩定的複合狀態不容易捕捉電子或電洞，因此可修補光伏裝置的雜質缺陷，從而增加光伏裝置之電子或電洞的生命週期(carrier lifetime)，俾利於處理裝置增加光伏裝置的轉換效率。 In various embodiments described above, the passivation device (or laser source group) of the processing device can provide a high injection beam and sufficient heat for the photovoltaic device. In this way, the hydrogen (H) atoms left by the photovoltaic device in the diffusion process can obtain sufficient energy to be converted into negatively charged hydrogen ions (H − ). Since the negatively charged hydrogen ions (H - ) are easily combined with the positively charged impurities in the photovoltaic device, a relatively stable composite state is formed. This relatively stable composite state does not easily capture electrons or holes, thereby repairing impurity defects of the photovoltaic device, thereby increasing the electron lifetime of the photovoltaic device or the carrier lifetime, thereby facilitating the processing device to increase the conversion efficiency of the photovoltaic device. .
以上所述僅係用以闡述本揭露所欲解決的問題、解決問題的技術手段、及其產生的功效等等，本揭露之具體細 節將在下文的實施方式及相關圖式中詳細介紹。 The above description is only used to explain the problems to be solved by the disclosure, the technical means for solving the problems, the effects thereof, and the like, and the details of the disclosure. The section will be described in detail in the following embodiments and related drawings.
100‧‧‧處理裝置 100‧‧‧Processing device
100a‧‧‧處理裝置 100a‧‧‧Processing device
110‧‧‧支撐架 110‧‧‧Support frame
110a‧‧‧支撐架 110a‧‧‧Support frame
112‧‧‧側壁 112‧‧‧ side wall
112a‧‧‧側壁 112a‧‧‧ Sidewall
114‧‧‧頂部 114‧‧‧ top
114a‧‧‧頂部 114a‧‧‧ top
120‧‧‧雷射光源組 120‧‧‧Laser light source group
122‧‧‧雷射光源 122‧‧‧Laser light source
130‧‧‧固定件 130‧‧‧Fixed parts
140‧‧‧功率控制器 140‧‧‧Power Controller
210‧‧‧照射區 210‧‧‧Irradiated area
220‧‧‧非照射區 220‧‧‧non-irradiated area
230‧‧‧機殼 230‧‧‧Chassis
240‧‧‧輸送帶 240‧‧‧ conveyor belt
300‧‧‧光伏裝置 300‧‧‧Photovoltaic devices
1122‧‧‧末端 End of 1122‧‧
1124‧‧‧頂端 1124‧‧‧Top
1126‧‧‧突出件 1126‧‧‧ protruding parts
1142‧‧‧底面 1142‧‧‧ bottom
1144‧‧‧頂面 1144‧‧‧ top surface
1144a‧‧‧頂面 1144a‧‧‧ top surface
A‧‧‧光伏裝置放置區 A‧‧‧Photovoltaic device placement area
D‧‧‧長度 D‧‧‧ Length
L‧‧‧雷射光 L‧‧‧Laser light
閱讀以下詳細敘述並搭配對應之圖式，可了解本揭露之多個樣態。需留意的是，圖式中的多個特徵並未依照該業界領域之標準作法繪製實際比例。事實上，所述之特徵的尺寸可以任意的增加或減少以利於討論的清晰性。 Read the following detailed description and the corresponding drawings to understand the various aspects of the disclosure. It should be noted that the various features in the drawings do not draw actual proportions in accordance with standard practice in the industry. In fact, the dimensions of the features described can be arbitrarily increased or decreased to facilitate clarity of discussion.
第1圖為依據本揭露之部分實施方式之用於光伏裝置之處理裝置的立體示意圖。 1 is a perspective view of a processing apparatus for a photovoltaic device according to some embodiments of the present disclosure.
第2圖為依據本揭露之部分實施方式之處理裝置的前視圖。 2 is a front elevational view of a processing apparatus in accordance with some embodiments of the present disclosure.
第3圖為依據本揭露之部分實施方式之處理裝置的前視圖。 Figure 3 is a front elevational view of a processing apparatus in accordance with some embodiments of the present disclosure.
以下將以圖式及詳細說明清楚說明本揭露之精神，任何所屬技術領域中具有通常知識者在瞭解本揭露之實施例後，當可由本揭露所教示之技術，加以改變及修飾，其並不脫離本揭露之精神與範圍。 The spirit and scope of the present disclosure will be apparent from the following description of the embodiments of the present disclosure, which may be modified and modified by the teachings of the present disclosure. Depart from the spirit and scope of this disclosure.
一般而言，光伏裝置之缺陷可分類為晶格缺陷、介面缺陷與雜質缺陷，缺陷數量的多寡會影響光伏裝置的轉換效率。其中，雜質缺陷的數量主要係取決於光伏裝置之半導體基板的純度，亦即，半導體基板所具有的雜質數量，例如：間隙氧(Oi)、鐵(Fe)、鎳(Ni)或銅(Cu)的數量。傳統上，光伏裝 置所使用之半導體基板是採用製造成本較低之柴氏(Czochralski，CZ)長晶法所製成，此半導體基板具有多達百萬分之一的雜質缺陷，而容易捕捉自由的電子或電洞，導致光伏裝置之電子或電洞的生命週期(carrier lifetime)下降，從而降低光伏裝置的轉換效率。因此，本揭露提供一種用於光伏裝置之處理裝置，此處理裝置可修補光伏裝置的雜質缺陷，從而增加光伏裝置的轉換效率。 In general, defects in photovoltaic devices can be classified into lattice defects, interface defects, and impurity defects, and the amount of defects affects the conversion efficiency of photovoltaic devices. The amount of impurity defects mainly depends on the purity of the semiconductor substrate of the photovoltaic device, that is, the amount of impurities of the semiconductor substrate, such as interstitial oxygen (Oi), iron (Fe), nickel (Ni) or copper (Cu). )quantity. Traditionally, photovoltaic installation The semiconductor substrate used is made of Czochralski (CZ) crystal growth method, which has a manufacturing cost of up to one millionth of an impurity defect, and is easy to capture free electrons or electricity. The hole causes a decrease in the life of the electron or hole of the photovoltaic device, thereby reducing the conversion efficiency of the photovoltaic device. Accordingly, the present disclosure provides a processing apparatus for a photovoltaic device that can repair impurity defects of the photovoltaic device, thereby increasing conversion efficiency of the photovoltaic device.
參照第1圖。第1圖為依據本揭露之部分實施方式之用於光伏裝置之處理裝置的立體示意圖。處理裝置100包含一光伏裝置放置區A、一支撐架110與一雷射光源組120。支撐架110係設置於光伏裝置放置區A上。雷射光源組120係設置於支撐架110之朝向光伏裝置放置區A的一側，且雷射光源組120係用以朝光伏裝置放置區A發出雷射光L。更詳細地說，雷射光源組120係固定於支撐架110，而位於光伏裝置放置區A的上方。當光伏裝置300位於光伏裝置放置區A之雷射光源組120的正下方時，光伏裝置300會被雷射光源組120所發射的雷射光L照射，而吸收雷射光L所提供的能量。此雷射光L可提供光伏裝置300足夠的光能與熱能，從而修補光伏裝置300的雜質缺陷。 Refer to Figure 1. 1 is a perspective view of a processing apparatus for a photovoltaic device according to some embodiments of the present disclosure. The processing device 100 includes a photovoltaic device placement area A, a support frame 110 and a laser source set 120. The support frame 110 is disposed on the photovoltaic device placement area A. The laser light source group 120 is disposed on a side of the support frame 110 facing the photovoltaic device placement area A, and the laser light source group 120 is configured to emit the laser light L toward the photovoltaic device placement area A. In more detail, the laser source set 120 is fixed to the support frame 110 and located above the photovoltaic device placement area A. When the photovoltaic device 300 is located directly below the laser source group 120 of the photovoltaic device placement area A, the photovoltaic device 300 is illuminated by the laser light L emitted by the laser source group 120 to absorb the energy provided by the laser beam L. This laser light L can provide sufficient light energy and thermal energy to the photovoltaic device 300 to repair impurity defects of the photovoltaic device 300.
換句話說，處理裝置100可修補光伏裝置300的雜質缺陷。更詳細地說，當光伏裝置300經過擴散製程與網印製程之後，處理裝置100之雷射光源組120會照射光伏裝置300，以提供光伏裝置300一高注入光束與熱能。如此一來，光伏裝置300在擴散製程中所遺留的氫(H)原子可獲得足夠的能量， 而轉變為帶負電的氫離子(H-)。由於帶負電的氫離子(H-)容易與光伏裝置300中帶正電的雜質(例如：硼氧錯合物BO+、或鐵Fe+)結合，而形成較穩定的複合狀態。此較穩定的複合狀態不容易捕捉電子或電洞，因此可修補光伏裝置300的雜質缺陷，從而增加光伏裝置300之電子或電洞的生命週期(carrier lifetime)，俾利於增加光伏裝置300的轉換效率。 In other words, the processing device 100 can repair impurity defects of the photovoltaic device 300. In more detail, after the photovoltaic device 300 passes through the diffusion process and the screen printing process, the laser source set 120 of the processing device 100 illuminates the photovoltaic device 300 to provide a high injection beam and thermal energy of the photovoltaic device 300. As a result, the hydrogen (H) atoms left by the photovoltaic device 300 in the diffusion process can obtain sufficient energy to be converted into negatively charged hydrogen ions (H − ). Since the negatively charged hydrogen ions (H − ) are easily combined with positively charged impurities (for example, boron oxygen complex BO + , or iron Fe + ) in the photovoltaic device 300, a relatively stable composite state is formed. This relatively stable composite state does not easily capture electrons or holes, and thus can repair impurity defects of the photovoltaic device 300, thereby increasing the electron lifetime of the photovoltaic device 300 or the carrier lifetime, thereby facilitating the conversion of the photovoltaic device 300. effectiveness.
於部分實施方式中，以P型矽基光伏裝置(p-type silicon based photovoltaic)為例，例如：硼摻雜單晶矽光伏裝置或硼摻雜多晶矽光伏裝置。處理裝置100亦可改善P型矽基光伏裝置之光致衰退(Light Induced Degradation，LID)現象，使得經過處理裝置100處理過後之P型矽基光伏裝置之光致衰退比例係小於1%。更詳細地說，光致衰退現象係指P型矽基光伏裝置在光照之下或載子注入之下，硼摻雜矽基板中的硼原子會與間隙氧形成硼氧錯合物，此硼氧錯合物容易捕捉電子或電洞，進而減少P型矽基光伏裝置的轉換效率。由於經過處理裝置100處理過後的P型矽基光伏裝置已產生穩定狀態的氫-硼氧((H-)-(BO+))複合物。因此，當光照射P型矽基光伏裝置時，P型矽基光伏裝置所可產生硼氧錯合物(BO+)的數量亦會減少，俾利於改善P型矽基光伏裝置之光致衰退現象。 In some embodiments, a p-type silicon based photovoltaic device is exemplified, for example, a boron-doped single crystal germanium photovoltaic device or a boron-doped polycrystalline germanium photovoltaic device. The processing device 100 can also improve the Light Induced Degradation (LID) phenomenon of the P-type germanium-based photovoltaic device, such that the photo-induced degradation ratio of the P-type germanium-based photovoltaic device processed by the processing device 100 is less than 1%. In more detail, the photodegradation phenomenon refers to a P-type germanium-based photovoltaic device under illumination or under the implantation of a carrier. The boron atoms in the boron-doped germanium substrate form a boron-oxygen complex with the interstitial oxygen. Oxygen complexes readily capture electrons or holes, thereby reducing the conversion efficiency of P-type germanium based photovoltaic devices. Since the P-type germanium-based photovoltaic device processed by the processing apparatus 100 has produced a stable state of hydrogen-boron-oxygen ((H - )-(BO + )) complex. Therefore, when light is irradiated onto a P-type germanium-based photovoltaic device, the amount of boron-oxygen complex (BO + ) that can be produced by the P-type germanium-based photovoltaic device is also reduced, which is advantageous for improving the photoinduced degradation of the P-type germanium-based photovoltaic device. phenomenon.
於部分實施方式中，處理裝置100可安裝於後段網印(printer)設備與轉換效率檢測系統之間。更詳細地說，處理裝置100可設置於網印設備之快速燒結裝置與轉換效率檢測系統之間。如此一來，處理裝置100可有效地利用光伏裝置300於前段製程(例如：擴散製程、或薄膜沉積製程)中所形成的氫 原子，亦即光伏裝置300之內部具有足夠的氫原子。此些氫原子可有效地吸收處理裝置100所提供的能量，使得氫原子轉變為帶負電的氫離子，從而修補光伏裝置300之雜質缺陷。 In some embodiments, the processing device 100 can be installed between a poster printer and a conversion efficiency detection system. In more detail, the processing device 100 can be disposed between the rapid sintering device of the screen printing device and the conversion efficiency detecting system. In this way, the processing device 100 can effectively utilize the hydrogen formed by the photovoltaic device 300 in the front-end process (eg, diffusion process, or thin film deposition process). The atoms, that is, the interior of the photovoltaic device 300, have sufficient hydrogen atoms. Such hydrogen atoms can effectively absorb the energy provided by the processing device 100, causing the hydrogen atoms to be converted into negatively charged hydrogen ions, thereby repairing the impurity defects of the photovoltaic device 300.
於部分實施方式中，處理裝置100可為鏤空式設計，亦即處理裝置100可為非封閉腔室。處理裝置100係至少部分地暴露於大氣環境之下，而無須將處理裝置100抽真空或通入其他氣體，但本揭露不以此為限。 In some embodiments, the processing device 100 can be a hollow design, that is, the processing device 100 can be a non-closed chamber. The processing device 100 is at least partially exposed to the atmosphere without the need to evacuate or pass other gases to the processing device 100, but the disclosure is not limited thereto.
於部分實施方式中，如第1圖所示，光伏裝置放置區A包含一照射區210與一非照射區220。照射區210係鄰設於非照射區220，照射區210係位於雷射光源組120之一照射範圍內，且照射區內210之溫度能夠受到雷射光的加熱而提升至一目標溫度，目標溫度係介於攝氏100度與攝氏800度。也就是說，位於照射區210之光伏裝置300的溫度可被提升至攝氏100度與攝氏800度之間。舉例而言，位於照射區210之光伏裝置300的溫度可為攝氏200度、攝氏300度、攝氏400度、攝氏500度、攝氏600度、或攝氏700度，但本揭露不以此為限。如此一來，當光伏裝置300位於雷射光源組120之下方的照射區210時，光伏裝置300可同時接收熱能與光能，俾利於處理裝置100提供光伏裝置300足夠的能量，以修補光伏裝置300之雜質缺陷。值得注意的是，當照射區210之溫度小於攝氏100度時，光伏裝置300會無法獲得足夠的能量來轉換氫原子為帶負電的氫離子，從而無法有效地修補雜質缺陷。當照射區210之溫度大於800度時，則會導致光伏裝置300之不必要的熱積存(thermal budget)，從而增加光伏裝置300受熱所產生的翹曲 量。 In some embodiments, as shown in FIG. 1, the photovoltaic device placement area A includes an illumination area 210 and a non-irradiation area 220. The irradiation area 210 is adjacent to the non-irradiation area 220, and the irradiation area 210 is located in one of the irradiation ranges of the laser light source group 120, and the temperature of the irradiation area 210 can be heated by the laser light to a target temperature, the target temperature. The system is between 100 degrees Celsius and 800 degrees Celsius. That is, the temperature of the photovoltaic device 300 located in the illumination zone 210 can be raised to between 100 degrees Celsius and 800 degrees Celsius. For example, the temperature of the photovoltaic device 300 located in the irradiation zone 210 may be 200 degrees Celsius, 300 degrees Celsius, 400 degrees Celsius, 500 degrees Celsius, 600 degrees Celsius, or 700 degrees Celsius, but the disclosure is not limited thereto. In this way, when the photovoltaic device 300 is located in the irradiation area 210 below the laser light source group 120, the photovoltaic device 300 can simultaneously receive thermal energy and light energy, so that the processing device 100 can provide sufficient energy of the photovoltaic device 300 to repair the photovoltaic device. 300 impurity defects. It is worth noting that when the temperature of the irradiation zone 210 is less than 100 degrees Celsius, the photovoltaic device 300 cannot obtain sufficient energy to convert the hydrogen atoms into negatively charged hydrogen ions, thereby failing to effectively repair the impurity defects. When the temperature of the irradiation zone 210 is greater than 800 degrees, it may cause unnecessary thermal budget of the photovoltaic device 300, thereby increasing the warpage caused by the heating of the photovoltaic device 300. the amount.
於部分實施方式中，光伏裝置放置區A不具有加熱裝置。也就是說，雷射光源組120為照射區210的加熱元件。在雷射光源組120的照射下，光伏裝置放置區A之照射區210的溫度會大於室溫，亦即，照射區210的溫度能夠受到雷射光的加熱而提升。亦即，處理裝置100之雷射光源組120可提供光伏裝置300足夠的熱量，而無須設置額外的加熱裝置，俾利於簡化處理裝置100之結構。 In some embodiments, the photovoltaic device placement zone A does not have a heating device. That is, the laser source set 120 is a heating element of the illumination zone 210. Under the illumination of the laser source group 120, the temperature of the irradiation zone 210 of the photovoltaic device placement zone A may be greater than room temperature, that is, the temperature of the illumination zone 210 can be increased by the heating of the laser light. That is, the laser source set 120 of the processing device 100 can provide sufficient heat to the photovoltaic device 300 without the need to provide additional heating means, thereby facilitating the simplification of the structure of the processing device 100.
同時參照第1圖與第2圖。第2圖為依據本揭露之部分實施方式之處理裝置的前視圖。於部分實施方式中，支撐架110包含一側壁112與一頂部114，側壁112與頂部114相交，且側壁係112位於光伏裝置放置區A與頂部114之間。側壁112係連接光伏裝置放置區A，頂部114與光伏裝置放置區A相隔一距離，且雷射光源組120係固定於支撐架110之頂部114。也就是說，雷射光源組120與光伏裝置放置區A相隔至少一距離。藉由調整側壁112的長度D，可調整雷射光源組120與光伏裝置放置區A的距離，從而改變雷射光源組120之照射範圍內的溫度，亦即，改變光伏裝置放置區A之照射區210的溫度。 Refer to both Figure 1 and Figure 2. 2 is a front elevational view of a processing apparatus in accordance with some embodiments of the present disclosure. In some embodiments, the support frame 110 includes a side wall 112 and a top portion 114, the side wall 112 intersects the top portion 114, and the side wall system 112 is located between the photovoltaic device placement area A and the top portion 114. The sidewalls 112 are connected to the photovoltaic device placement area A, the top 114 is spaced from the photovoltaic device placement area A, and the laser source set 120 is fixed to the top 114 of the support frame 110. That is, the laser source set 120 is at least one distance from the photovoltaic device placement area A. By adjusting the length D of the side wall 112, the distance between the laser source group 120 and the photovoltaic device placement area A can be adjusted, thereby changing the temperature within the illumination range of the laser source group 120, that is, changing the illumination of the photovoltaic device placement area A. The temperature of zone 210.
舉例而言，如第1及2圖所示，於部分實施方式中，光伏裝置放置區A可位於一機殼230上。側壁112包含一末端1122與一頂端1124。末端1122係相對頂端1124遠離頂部114，且側壁112之頂端1124與頂部114係互相連接的。側壁112之末端1122具有一突出件1126，突出件1126係連接機殼230，且藉由一固定件130將突出件1126固定於機殼230上。 舉例而言，於部分實施方式中，固定件130可為螺絲、卡扣件或螺栓，但本揭露不以此為限。 For example, as shown in FIGS. 1 and 2, in some embodiments, the photovoltaic device placement area A may be located on a casing 230. The sidewall 112 includes an end 1122 and a tip 1124. The end 1122 is opposite the top end 114 from the top end 114, and the top end 1124 of the side wall 112 is interconnected with the top portion 114. The end 1122 of the side wall 112 has a protruding member 1126. The protruding member 1126 is connected to the casing 230, and the protruding member 1126 is fixed to the casing 230 by a fixing member 130. For example, in some embodiments, the fixing member 130 can be a screw, a snap member or a bolt, but the disclosure is not limited thereto.
於部分實施方式中，雷射光源組120所發出之雷射光的功率密度係介於2W/cm2與10W/cm2之間，以有效且快速地修補光伏裝置300的雜質缺陷。舉例而言，於部分實施方式中，雷射光源組120所發出之雷射光的功率密度可為4W/cm2、6W/cm2或8W/cm2，但本揭露不以此為限。於部分實施方式中，以P型矽基光伏裝置為例，當雷射光源組120所發出之雷射光的功率密度為2W/cm2至10W/cm2時，雷射光源120可提供P型矽基光伏裝置足夠的能量與高注入載子，使得P型矽基光伏裝置之硼摻雜矽基板中的硼原子與間隙氧會快速地結合，而形成帶正電的硼氧錯合物。此帶正電的硼氧錯合物易吸引帶負電的氫離子，從而有效且快速地修補P型矽基光伏裝置之雜質缺陷，俾利增加處理裝置100於每單位時間內的產出量。 In some embodiments, the laser light emitted by the laser source set 120 has a power density between 2 W/cm 2 and 10 W/cm 2 to effectively and quickly repair the impurity defects of the photovoltaic device 300. The power density of laser light for example, in some embodiments, the, the emitted laser light source group 120 may 4W / cm 2, 6W / cm 2 or 8W / cm 2, however, the present disclosure is not limited thereto. In some embodiments, taking the P-type germanium-based photovoltaic device as an example, when the power density of the laser light emitted by the laser light source group 120 is 2 W/cm 2 to 10 W/cm 2 , the laser light source 120 can provide a P-type. The sufficient energy and high injecting carrier of the germanium-based photovoltaic device enable the boron atoms in the boron-doped germanium substrate of the P-type germanium-based photovoltaic device to rapidly combine with the interstitial oxygen to form a positively charged boron-oxygen complex. The positively charged boron-oxygen complex is easy to attract the negatively charged hydrogen ions, thereby effectively and quickly repairing the impurity defects of the P-type germanium-based photovoltaic device, thereby increasing the output of the processing device 100 per unit time.
於部分實施方式中，處理裝置100更包含功率控制器140，功率控制器140係電性連接雷射光源組120。光伏裝置放置區A係可移動的，且功率控制器140係用以依據光伏裝置放置區A的移動速率調整雷射光源組120所發出之雷射光的功率密度。更詳細地說，雷射光源組120所發出的雷射光的功率密度可藉由功率控制器140調整。舉例而言，於部分實施方式中，光伏裝置放置區A可為輸送裝置的一部分。輸送裝置包含位於機殼230上的輸送帶240，輸送帶240係可轉動以帶動光伏裝置300朝著雷射光源組120前進，且輸送帶240之轉速可隨 著製程當下的狀況或產能改變。當輸送帶240傳送光伏裝置300的速率較快時，亦即，光伏裝置300停留於雷射光源組120下方的時間較短時，功率控制器140可增加雷射光源組120之功率密度，使得光伏裝置300於每單位時間內所接收到的雷射能量係足夠的。或者，於部分實施方式中，當輸送帶240傳送光伏裝置300的速率較慢時，亦即，光伏裝置300停留於雷射光源組120下方的時間較長時，功率控制器140可減少雷射光源組120之功率密度，使得光伏裝置300於每單位時間內所接收到的雷射能量係適當的。 In some embodiments, the processing device 100 further includes a power controller 140 that is electrically connected to the laser source group 120. The photovoltaic device placement area A is movable, and the power controller 140 is configured to adjust the power density of the laser light emitted by the laser light source group 120 according to the moving rate of the photovoltaic device placement area A. In more detail, the power density of the laser light emitted by the laser source set 120 can be adjusted by the power controller 140. For example, in some embodiments, the photovoltaic device placement zone A can be part of a delivery device. The conveying device comprises a conveyor belt 240 on the casing 230. The conveyor belt 240 is rotatable to drive the photovoltaic device 300 toward the laser source group 120, and the speed of the conveyor belt 240 can follow The current state of the process or capacity changes. When the conveyor belt 240 transmits the photovoltaic device 300 at a faster rate, that is, when the photovoltaic device 300 stays under the laser source group 120 for a shorter period of time, the power controller 140 can increase the power density of the laser source group 120 such that The laser energy received by the photovoltaic device 300 per unit time is sufficient. Alternatively, in some embodiments, when the conveyor belt 240 transmits the photovoltaic device 300 at a slower rate, that is, when the photovoltaic device 300 stays under the laser source group 120 for a longer period of time, the power controller 140 can reduce the laser. The power density of the source group 120 is such that the laser energy received by the photovoltaic device 300 per unit time is appropriate.
於部分實施方式中，雷射光源組120所發出之雷射光的波長係介於300奈米與1100奈米之間，以提供光伏裝置300足夠的能量，從而有效且快速地修補光伏裝置300的雜質缺陷。舉例而言，於部分實施方式中，雷射光源組120所發出之雷射光之波峰波長可為375奈米、400奈米、500奈米、600奈米、700奈米、800奈米、900奈米或1000奈米，但本揭露不以此為限。 In some embodiments, the laser light emitted by the laser source set 120 has a wavelength between 300 nm and 1100 nm to provide sufficient energy for the photovoltaic device 300 to effectively and quickly repair the photovoltaic device 300. Impurity defects. For example, in some embodiments, the laser light emitted by the laser source group 120 can have a peak wavelength of 375 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900. Nano or 1000 nm, but this disclosure is not limited to this.
於部分實施方式中，支撐架110之頂部114包含相對的一底面1142與一頂面1144。頂面1144係相對底面1142遠離光伏裝置放置區A，且雷射光源組120係設置於頂部114之底面1142。於部分實施方式中，雷射光源組120可包含複數雷射光源122。舉例而言，複數雷射光源122係排列成連續的長條狀、或不連續的長條狀；或者，雷射光源122可以二維陣列的方式分布於支撐架110之頂部114，但本揭露不以此為限。於其他實施方式中，雷射光源組120可為單一的雷射光源，此單 一的雷射光源可為球型光源、長條狀光源，但本揭露不以此為限。 In some embodiments, the top portion 114 of the support frame 110 includes an opposite bottom surface 1142 and a top surface 1144. The top surface 1144 is remote from the photovoltaic device placement area A relative to the bottom surface 1142, and the laser source set 120 is disposed on the bottom surface 1142 of the top portion 114. In some embodiments, the laser source set 120 can include a plurality of laser sources 122. For example, the plurality of laser light sources 122 are arranged in a continuous strip shape or a discontinuous strip shape; or, the laser light sources 122 may be distributed in a two-dimensional array on the top portion 114 of the support frame 110, but the disclosure Not limited to this. In other embodiments, the laser source set 120 can be a single laser source, this single A laser light source may be a spherical light source or a long strip light source, but the disclosure is not limited thereto.
從另一方面來看，雷射光源組120可做為鈍化裝置，此鈍化裝置設置於支撐架110之朝向光伏裝置放置區A之一側，且用以提供能夠修補光伏裝置300之雜質缺陷的光和熱。亦即，鈍化裝置可提供光伏裝置300至少一高注入光與熱能，從而修補光伏裝置300的雜質缺陷。光伏裝置放置區A包含鈍化區與非鈍化區，鈍化區係位於鈍化裝置之正下方，亦即，位於鈍化裝置之正下方之光伏裝置放置區A可被定義為一鈍化區(或稱為照射區210)，且光伏裝置300可於鈍化區內被鈍化(passivation)。非位於鈍化裝置之正下方的光伏裝置放置區A可被定義為一非鈍化區(亦即非照射區220)。此外，藉由鈍化裝置的設置，鈍化區內的溫度能基於鈍化裝置所提供的熱能而提升至一目標溫度，且目標溫度係介於攝氏100度與攝氏800度。雖然本實施方式以雷射光源組120做為鈍化裝置，但於其他實施方式中，鈍化裝置更包含其他輔助升溫模組，像是聚光玻璃板、或其他適當的元件，但本揭露不以此為限。 On the other hand, the laser light source group 120 can be used as a passivation device, which is disposed on one side of the support frame 110 facing the photovoltaic device placement area A, and is used to provide an impurity defect capable of repairing the photovoltaic device 300. Light and heat. That is, the passivation device can provide at least one high injection of light and thermal energy to the photovoltaic device 300, thereby repairing impurity defects of the photovoltaic device 300. The photovoltaic device placement area A includes a passivation region and a non-passivation region, and the passivation region is directly under the passivation device, that is, the photovoltaic device placement region A located directly under the passivation device can be defined as a passivation region (or referred to as illumination). Zone 210), and photovoltaic device 300 can be passivated within the passivation zone. The photovoltaic device placement zone A, which is not directly below the passivation device, can be defined as a non-passivation zone (i.e., non-irradiation zone 220). In addition, by the arrangement of the passivation device, the temperature in the passivation region can be raised to a target temperature based on the thermal energy provided by the passivation device, and the target temperature is between 100 degrees Celsius and 800 degrees Celsius. Although the laser light source group 120 is used as the passivation device in the embodiment, in other embodiments, the passivation device further includes other auxiliary temperature rising modules, such as concentrating glass plates, or other suitable components, but the disclosure does not This is limited.
參照第3圖。第3圖為依據本揭露之實施方式之處理裝置100a的前視圖。本實施方式於前述實施方式之主要差異在於：雷射光源組120可設置於支撐架110a之頂部114a的頂面1144a，且頂部114a係透明的。也就是說，雷射光源組120所發射之雷射光可穿透支撐架110a之頂部114a，從而照射到位於雷射光源組120正下方的光伏裝置300。舉例而言，於部分實施方式中，頂部114a可為一透明基板、或光學玻璃，用以擴 散、或均勻化雷射光，但本揭露不以此為限。於其他實施方式中，頂部114a亦可具有一開口，使得雷射光源組120所發射之雷射光可通過此開口而照射到光伏裝置300，但本揭露不以此為限。 Refer to Figure 3. Figure 3 is a front elevational view of the processing device 100a in accordance with an embodiment of the present disclosure. The main difference between the embodiment and the foregoing embodiment is that the laser source set 120 can be disposed on the top surface 1144a of the top portion 114a of the support frame 110a, and the top portion 114a is transparent. That is, the laser light emitted by the laser source group 120 can penetrate the top portion 114a of the support frame 110a to illuminate the photovoltaic device 300 directly below the laser source group 120. For example, in some embodiments, the top portion 114a may be a transparent substrate or an optical glass for expanding Disperse or homogenize the laser light, but this disclosure is not limited to this. In other embodiments, the top portion 114a may also have an opening, such that the laser light emitted by the laser source group 120 can be irradiated to the photovoltaic device 300 through the opening, but the disclosure is not limited thereto.
於上述之多個實施方式中，處理裝置之鈍化裝置(或雷射光源組)可提供光伏裝置一高注入光束與足夠熱量。如此一來，光伏裝置在擴散製程中所遺留的氫原子可獲得足夠的能量，而轉變為帶負電的氫離子。由於帶負電的氫離子容易與光伏裝置中帶正電的雜質結合，而形成較穩定的複合狀態。此較穩定的複合狀態不容易捕捉電子或電洞，因此可修補光伏裝置的雜質缺陷，從而增加光伏裝置之電子或電洞的生命週期(carrier lifetime)，俾利於處理裝置增加光伏裝置的轉換效率。此外，由於經過處理裝置處理過後的P型矽基光伏裝置可產生穩定狀態的氫-硼氧((H-)-(BO+))複合物，因此，當太陽光照射P型矽基光伏裝置時，P型矽基光伏裝置的光致衰退現象亦會減少。 In various embodiments described above, the passivation device (or laser source group) of the processing device can provide a high injection beam and sufficient heat for the photovoltaic device. In this way, the hydrogen atoms left by the photovoltaic device in the diffusion process can obtain sufficient energy to be converted into negatively charged hydrogen ions. Since the negatively charged hydrogen ions are easily combined with the positively charged impurities in the photovoltaic device, a relatively stable composite state is formed. This relatively stable composite state does not easily capture electrons or holes, thereby repairing impurity defects of the photovoltaic device, thereby increasing the electron lifetime of the photovoltaic device or the carrier lifetime, thereby facilitating the processing device to increase the conversion efficiency of the photovoltaic device. . In addition, since the P-type germanium-based photovoltaic device processed by the processing device can generate a stable state of hydrogen-boron-oxygen ((H - )-(BO + )) complex, when the sunlight is irradiated to the P-type germanium-based photovoltaic device At the same time, the photo-induced degradation of P-type germanium-based photovoltaic devices will also decrease.
雖然本揭露已以實施方式揭露如上，然其並非用以限定本揭露，任何熟習此技藝者，在不脫離本揭露之精神和範圍內，當可作各種之更動與潤飾，因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。 The present disclosure has been disclosed in the above embodiments, and is not intended to limit the disclosure. Any one skilled in the art can make various modifications and retouchings without departing from the spirit and scope of the disclosure. The scope is subject to the definition of the scope of the patent application attached.
100‧‧‧處理裝置 100‧‧‧Processing device
110‧‧‧支撐架 110‧‧‧Support frame
112‧‧‧側壁 112‧‧‧ side wall
114‧‧‧頂部 114‧‧‧ top
120‧‧‧雷射光源組 120‧‧‧Laser light source group
122‧‧‧雷射光源 122‧‧‧Laser light source
130‧‧‧固定件 130‧‧‧Fixed parts
140‧‧‧功率控制器 140‧‧‧Power Controller
1122‧‧‧末端 End of 1122‧‧
1124‧‧‧頂端 1124‧‧‧Top
1126‧‧‧突出件 1126‧‧‧ protruding parts
1142‧‧‧底面 1142‧‧‧ bottom
1144‧‧‧頂面 1144‧‧‧ top surface
D‧‧‧長度 D‧‧‧ Length
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