TWM520193U - Cleaning device - Google Patents

Description

Cleaning device

The present invention relates to a cleaning device, and more particularly to a cleaning device for rinsing a wafer surface.

In the upstream process of the semiconductor industry, the ingot is first grown into an ingot, and the ingot is cut into wafers by the technique of multi-wire sawing. Wait for the wafer to perform subsequent processes. Taking a multi-wire sawing technique as an example, the ingot is first connected to a cutting plate by its side along the length direction, and the cutting line is moved in parallel and at a high speed from the opposite of the ingot. The cutting plate is tangentially cut at one end of the cutting plate to cut the ingot into a plurality of wafers, and since the sliced ingot is still attached to the cutting plate, the wafers are parallel to each other at intervals. In the process of the wire saw, water and abrasive slurry are applied to the cutting line, and the slurry will increase its moisture content due to mixing with water, and further increase the viscosity. Therefore, after the cutting is completed, the deposits in which the slurry, the chips, and the abrasive grains are mixed adhere to the surface of each wafer. If the attachment attached to the wafer is not removed, the final product surface defects will be caused in the subsequent processing, so it is a necessary step to completely remove the attachment.

In order to remove the deposits on the wafer, the existing method is to manually flush the water so that the water rapidly flows through the gap between the wafers to flush out the deposits on the surface to be cleaned of the wafer. The specific method is that the operator holds a single water column directly to the gap between the wafers, and rinses the surface to be cleaned of the wafer. After completion, the water column is moved to the next gap, thus completing all the wafers one by one. Cleaning. However, this artificial method is difficult to stably maintain the distance between the water column and the wafer, so the force on the wafer is not stable, and the wafer is easily broken. In addition, the single water column can only be washed in a small range at the same time. The gap between the wafers, so the position of the nozzles needs to be manually changed to complete the flushing of all the gaps, and as the number of gaps becomes larger, the time spent increases. In summary, the existing rinsing method not only easily reduces the yield of the wafer but also takes a lot of time.

Therefore, at least one object of the present invention is to provide a cleaning device for rinsing a surface to be cleaned of a wafer immersed in a rinsing liquid with a stable and appropriately sized force so that the wafer can be detached without fragmentation. The attachment attached to the wafer is removed.

Still another object of the present invention is to provide a cleaning apparatus capable of simultaneously flushing gaps between all wafers.

Therefore, the present invention is a cleaning device suitable for rinsing at least one wafer unit with a rinsing liquid, the wafer unit having a plurality of wafers, each wafer having two opposite The surface to be cleaned, and the waiting cleaning surfaces are spaced apart from each other. The cleaning device comprises at least one tank, at least one nozzle unit and a gas supply module.

The tank body has a receiving groove for containing the rinsing liquid, and the wafer unit is disposed in the accommodating groove and immersed in the rinsing liquid. The nozzle unit includes a plurality of nozzles located in the accommodating groove, the nozzles are spaced apart from each other and located below the liquid level of the rinsing liquid, the nozzle unit is spaced apart from the wafer unit, and each of the nozzles is aligned The wafers in the wafer unit. The gas supply module is in communication with the nozzles for generating a gas, and the gas is ejected from the nozzles to the wafers to drive the rinse liquid to rinse the surfaces of the wafers to be cleaned.

In some embodiments, each nozzle of the nozzle unit is equidistant from the corresponding wafers.

In some implementations, each nozzle is aligned to a gap between two corresponding wafers.

In some embodiments, each of the nozzles is spaced apart from each other by a predetermined distance.

In some implementations, the predetermined distance is between 5 mm and 30 mm.

In some embodiments, the gas supply module includes a gas supply unit for supplying gas and at least one pipeline communicating with the gas supply unit for conveying a gas, the pipeline having a nozzle Interconnected output segments and one-use A valve that controls the entry of gas into the output section.

In some embodiments, the gas supply module further includes at least one pressure sensor disposed in the pipeline, the pressure sensor for detecting air pressure in the pipeline.

In some embodiments, the gas has a predetermined gas pressure between 0.05 mPa and 0.15 mPa.

In some embodiments, each of the nozzles has a bore diameter between 20 mm and 30 mm.

The utility model has the advantages of: using a stable air flow to drive the flow of the liquid, and rinsing the surface to be cleaned of the wafer immersed in the rinsing liquid with a stable and appropriate force, so that the wafer can be fragmented without causing the wafer to be fragmented. The deposit attached to the surface to be cleaned of the wafer is removed.

100‧‧‧cleaning device

1‧‧‧ tank

11‧‧‧ accommodating slots

2‧‧‧Nozzle unit

21‧‧‧ nozzle

3‧‧‧ gas supply module

31‧‧‧ gas supply unit

32‧‧‧Splitting unit

33‧‧‧pipe

331‧‧‧Output segment

332‧‧‧ Valve

34‧‧‧ Pressure Sensor

35‧‧‧ Positioning unit

36‧‧‧Main on-off valve

91‧‧‧ Wafer Unit

911‧‧‧ wafer

911A‧‧‧cleaning surface to be cleaned

92‧‧‧ cutting board

93‧‧‧cleaning fluid

94‧‧‧ Lifting unit

D1‧‧‧Predetermined distance

Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a schematic diagram illustrating an embodiment of the present cleaning apparatus; and FIG. 2 is a top view, The embodiment is in a state in which the cleaning liquid is contained; FIG. 3 is a top view showing a state in which the cleaning liquid is not contained in the embodiment; and FIG. 4 is a partially enlarged view of FIG. 3, in which a plurality of nozzles of the embodiment are The gas is sprayed onto multiple wafers.

Referring to FIG. 1, an embodiment of the cleaning apparatus 100 of the present invention is suitable for rinsing a plurality of wafer units 91 with a rinsing liquid 93. The cleaning device 100 includes a plurality of tanks 1 for accommodating the wafer unit 91 and the cleaning liquid 92, a plurality of nozzle units 2 respectively disposed in the tanks 1, and a gas for supplying a stable gas pressure. The gas supply module 3 of the nozzle units 2. In the present embodiment, each wafer unit 91 is a post-section ingot connected to a cutting board 92. Each wafer unit 91 has a plurality of wafers 911 arranged side by side, each wafer 911 having two opposite surfaces to be cleaned 911A (see FIG. 4), and the waiting cleaning surfaces 911A are spaced apart from each other. In the present embodiment, two slots 1, two nozzle units 2 and two wafer units 91 are disclosed in FIG. 1. However, the number of the slots 1, the nozzle unit 2 and the wafer unit 91 should be It varies according to actual use conditions and is not limited to the illustration.

In the present embodiment, the tanks 1 have a rectangular parallelepiped shape, and each of the tanks 1 has a receiving groove 11 for containing the rinsing liquid 93, the wafer unit 91 and the nozzle unit 2, and the wafer unit 91 and The nozzle unit 2 is immersed in the rinsing liquid 93. In the present embodiment, the cutting board 92 and the lifting unit 94 are fixed to each other. The wafer unit 91 controls the vertical height of the wafer unit 91 in the receiving slot 11 by the lifting unit 94.

Referring to FIG. 2, each nozzle unit 2 includes a plurality of nozzles 21 for ejecting gas to drive the flow of the cleaning liquid 93. The nozzles 21 are located in the accommodating groove 11 and are spaced apart from each other and located below the liquid level of the rinsing liquid 93. Further, each of the nozzles 21 is the wafer 911 aligned with the wafer unit 91, so that the cleaning liquid 93 driven by the gas ejected from the nozzle 21 can be rushed toward the wafer 911 at a high flow rate to reach the rinsing wafer 911. Effect. In detail, referring to FIG. 3, the distance between each nozzle 21 of the nozzle unit 2 and the corresponding wafers 911 is equal, thereby maintaining the gas pressure of the gas supplied by the gas supply module 3. In the case of stability, the flow rate of the cleaning liquid 93 driven by each nozzle 21 in the vicinity of the wafers 911 is substantially the same, so that the wafer 911 may be prevented from being fragmented or the cleaning effect may be poor due to uneven flushing force. . In addition, referring to FIG. 4, each of the nozzles 21 is arranged at a predetermined distance D1 so as to be spaced apart from each other such that the rinsing force of each wafer 911 is substantially equal. Further, the appropriate predetermined distance D1 enables the same. The nozzles 21 are respectively aligned with the gaps between the corresponding wafers 911, so that the cleaning liquids 93 can maximize the flushing effect on the surface 911A to be cleaned of the wafers 911. In this embodiment, the predetermined distance D1 is between 5 mm and 30 mm, and the diameter of each of the nozzles 21 is between 20 mm and 30 mm, but not limited thereto, the above numerical range should still be based on actual use conditions. And change.

The gas supply module 3 is in communication with the nozzles 21 of each of the nozzle units 2 for generating a gas and supplying them to the nozzles 21. The gas supply module 3 includes a gas supply unit 31 for supplying gas, a flow dividing unit 32, a plurality of pipelines 33 communicating with the gas supply unit 31 for conveying gas, and a plurality of correspondingly disposed corresponding to each other. The pressure sensor 34 of each of the pipelines 33 has a plurality of positioning units 35 for fixing each of the pipelines 33 and the corresponding tank body 1 and a main switching valve 36.

The flow dividing unit 32 is configured to divert the gas generated by the gas supply unit 31 to the pipelines 33. Each of the conduits 33 has an output section 331 that communicates with the nozzles 21 of the nozzle unit 2 and a valve 332 for controlling the flow of gas into the output section 321 . The pressure sensor 34 is configured to detect the air pressure in the pipeline 33 to facilitate operator control and maintain the force of the cleaning fluid 93 flushing to the wafers 911. Each positioning unit 35 positions the output section 331 of the corresponding pipe 33 at a specific position within the accommodating groove 11, thereby avoiding displacement during rinsing. In this embodiment, the gas has a predetermined gas pressure, and the predetermined gas pressure is between 0.05 mPa and 0.15 mPa, but not limited thereto.

In summary, the distance between each nozzle 21 of the cleaning device 100 and the corresponding wafers 911 is equal, and each nozzle 21 is spaced apart from each other by a predetermined distance D1, and the gas supply mode is matched. Group 3 provides a gas having a stable gas pressure to the nozzles 21, and the controller can flush the surface to be cleaned 911A of all the wafers 911 soaked in the cleaning liquid 93 with a stable and appropriate amount of force, so that The adhering matter attached to the surface to be cleaned 911A of the wafer 911 is completely removed without breaking the wafer 911. In addition, the cleaning device 100 of the present invention can simultaneously flush a plurality of wafer units 91, and simultaneously flush the surface to be cleaned 911A of each wafer 911 of each wafer unit 91, which can effectively shorten the cleaning time and reduce the labor cost. Therefore, the purpose of this new type can be achieved.

However, the above is only an embodiment of the present invention, when </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

100‧‧‧cleaning device

1‧‧‧ tank

2‧‧‧Nozzle unit

21‧‧‧ nozzle

3‧‧‧ gas supply module

31‧‧‧ gas supply unit

32‧‧‧Splitting unit

33‧‧‧pipe

331‧‧‧Output segment

332‧‧‧ Valve

34‧‧‧ Pressure Sensor

35‧‧‧ Positioning unit

36‧‧‧Main on-off valve

91‧‧‧ Wafer Unit

911‧‧‧ wafer

92‧‧‧ cutting board

93‧‧‧cleaning fluid

94‧‧‧ Lifting unit

Claims (9)

A cleaning device is adapted to rinse at least one wafer unit with a rinsing liquid, the wafer unit having a plurality of wafers, each wafer having two opposite surfaces to be cleaned, and the waiting cleaning surfaces are spaced apart from each other, the cleaning The device comprises: at least one tank body, the tank body has a receiving tank for containing the rinsing liquid, the wafer unit is disposed in the accommodating tank and is immersed in the rinsing liquid; at least one nozzle unit, the nozzle The unit includes a plurality of nozzles located in the accommodating groove, the nozzles are spaced apart from each other and located below the liquid level of the rinsing liquid, the nozzle unit is juxtaposed with the wafer unit, and each of the nozzles is aligned with the nozzle The wafers of the wafer unit; and a gas supply module, in communication with the nozzles, for generating a gas, the gas is ejected from the nozzles to the wafers to drive the rinse liquid to flush the wafers The surface to be cleaned of the wafer. The cleaning device of claim 1, wherein each nozzle of the nozzle unit is equidistant from a corresponding one of the wafers. The cleaning device of claim 1, wherein each nozzle is aligned with a gap between the corresponding two wafers. The cleaning device of claim 1, wherein each of the nozzles is spaced apart from each other by a predetermined distance. The cleaning device of claim 4, wherein the predetermined distance is between 5 mm and 30 mm. The cleaning device of claim 1, wherein the gas supply module comprises a gas supply unit for supplying a gas and at least one line communicating with the gas supply unit for conveying a gas, the line having One and the same An output section in which the nozzles communicate with each other and a valve for controlling the entry of gas into the output section. The cleaning device of claim 6, wherein the gas supply module further comprises at least one pressure sensor disposed in the pipeline, the pressure sensor for detecting air pressure in the pipeline. The cleaning device of claim 1, wherein the gas has a predetermined gas pressure, and the predetermined gas pressure is between 0.05 mPa and 0.15 mPa. The cleaning device of claim 1, wherein each of the nozzles has a diameter of between 20 mm and 30 mm.