TWM545662U - Chemical mechanical polishing conditioner having different heights - Google Patents

Description

Non-equal height chemical mechanical polishing dresser

This creation is about a non-equal height chemical mechanical polishing dresser, especially a combined non-equal height chemical mechanical polishing dresser.

Chemical Mechanical Polishing (CMP) is a common grinding process in various industries. The surface of various articles can be ground using a chemical polishing process, including ceramic, tantalum, glass, quartz, or metal wafers. In addition, with the rapid development of integrated circuits, chemical mechanical polishing can achieve large-area planarization, so it is one of the common wafer planarization techniques in semiconductor manufacturing.

In the chemical mechanical polishing process of semiconductors, the wafer (or other semiconductor components) is contacted by a polishing pad (Pad), and the polishing liquid is used as needed to pass the chemical reaction and physical mechanical force to remove the wafer. Impurity or uneven structure of the surface; when the polishing pad is used for a certain period of time, since the grinding debris generated by the grinding process is accumulated on the surface of the polishing pad, the polishing effect and the efficiency are lowered, and therefore, the conditioner can be used for grinding. The surface of the pad is ground to re-roughen the surface of the pad and maintain it in an optimal state of grinding.

However, in the preparation process of the dresser, the polishing layer formed by mixing the abrasive particles and the bonding layer is required to be disposed on the surface of the substrate, and the polishing layer is fixedly bonded to the surface of the substrate by hardening such as brazing or sintering. Although the above-mentioned correction device is suitable for refurbishing the polishing pad, for a more precise chemical mechanical polishing process, such as a chemical mechanical polishing process with a line width of less than 45 nm, the surface of the polishing pad is too rough, so that the wafer is easily scraped. Injury, local over-drow, sag and uneven thickness. As the linewidth requirements of integrated circuits shrink, the need for wafer surface flatness increases, and the requirements for trimmers increase.

In the prior art, for example, the Republic of China Patent Publication No. 201249595 discloses a polishing pad finisher for a CMP polishing pad comprising a substrate having a first set of protrusions and a second set of protrusions, the first set of protrusions Having a first average height and the second set of protrusions having a second average height different from the second average height, the tops of the protrusions in the first set of protrusions having an uneven surface and the second set The top of each of the protrusions has an uneven surface, and the first set of protrusions and the second set of protrusions have a layer of polycrystalline diamond on at least a top surface thereof. The sets of protrusions can be identified, for example, by their height, or by their predetermined position or their base size. This creation proposes various ways of measuring the protrusions, including the average height, peak-to-valley height, or bulge height measured from the back of the pad organizer.

In addition, another known technique of the Republic of China Patent Publication No. I228066 discloses a state in which the trimming surface of the dresser for a polishing cloth can be adjusted, and even if the shape of the front end of the grindstone particles causes the state of the trimmed surface to be individual, It is still possible to create a uniform surface of the polishing cloth, and it is possible to apply a polishing property suitable for the workpiece to the polishing cloth dressing device and the dressing method of the polishing cloth used therefor, so that the above-mentioned dresser is directed to the metal The polishing cloth dresser 1 having an annular dressing surface 4 is provided on the peripheral portion of the table 2, and the first and second portions of the grindstone particles having mutually different grain sizes are alternately arranged side by side on the dressing surface 4, respectively. The group of the grindstone particles 5 and 6, wherein the metal table 2 is provided with an adjustment to adjust the height difference δ between the reference faces S1 and S2 of the tip end of the grindstone particles having the largest particle size among the grindstone particles 5 and 6 The organization 7 is composed of.

However, the protrusions and the substrate of the chemical mechanical polishing dresser of the above-mentioned publication No. 201249595 are integrally formed, and the thickness is not easily controlled when the chemical vapor deposition diamond film (CVDD) is plated, so the former case and The composition and technical means of combining the grinding unit on the substrate are different, and the front case cannot accurately control the height of the tip; in addition, the height between the chemical mechanical polishing dressers of the publication No. I228066 is different heights. The design is to mechanically fix the polishing unit and the substrate, and the height difference cannot be precisely controlled. Moreover, the polishing performance of the conventional diamond dresser is limited by the crystal shape of the abrasive particles itself, and the creation can arbitrarily change the polishing unit substrate and the CVDD shape according to the user's requirements, for example, a planar substrate and a patterned CVDD polishing layer are combined to form A polishing unit, or a non-planar substrate and an equal thickness CVDD polishing layer to form a polishing unit in combination. Therefore, there is an urgent need to develop a non-equal height chemical mechanical polishing dresser, which is combined into a CVDD diamond dresser by means of a grinding unit, which can avoid the problem of thermal deformation and processing uniformity of the bottom substrate, and further, by different grinding. The height of the unit is different, and there are different penetration depths of the polishing pad to achieve different deep groove effects on the polishing pad.

The main purpose of this creation is to provide a non-equal height chemical mechanical polishing dresser that uses a combination to fix small-sized components on a large-sized substrate to obtain a better processing uniformity surface, thereby avoiding the left and right sides of the dresser. In the case of the difference in the deep groove, in addition, the effect of different deep grooves can be achieved, the roughness of the grinding surface can be adjusted, and the drainage of the slurry can be improved.

In order to achieve the above object, the present invention provides a non-equal height chemical mechanical polishing dresser comprising: a bottom substrate; a bonding layer disposed on the bottom substrate; and a plurality of polishing units disposed on the bonding layer, each A polishing unit may have an abrasive layer and a polishing unit substrate, the polishing layer may be formed by a chemical vapor deposition method, and the polishing layer has a plurality of polishing tips; wherein the polishing units may have a first The height of the tip and the height of the second tip enable the grinding units to form different tip heights. In addition, the present invention can utilize a grinding unit of the same thickness and a bonding layer of a non-fixed thickness to form a non-equal height chemical mechanical polishing dresser. Or, a different thickness of the grinding unit and a bonding layer of fixed or non-fixed thickness are utilized to form a non-equal height chemical mechanical polishing dresser.

In the non-equal height chemical mechanical polishing dresser of the present invention, the height difference between the first tip height and the second tip height may be 5 micrometers to 100 micrometers; in one aspect of the present creation, the first tip height and the first The height difference between the two tip heights may range from 15 microns to 60 microns. In the above-mentioned non-equal height chemical mechanical polishing dresser of the present invention, the grinding units may further include a third tip height or a fourth grinding height.

In the non-equal height chemical mechanical polishing dresser of the present invention, the shape of the grinding tip can be arbitrarily changed according to user requirements or grinding conditions, and the shape of the grinding tip can be blade-shaped, conical or arc-shaped. , cylindrical, pyramidal, or angular column, but this creation is not limited to this. In one aspect of the present invention, the shape of the grinding tip may be a pyramid shape; in another aspect of the creation, the shape of the grinding tip may be a prismatic shape; in another aspect of the creation The grinding tips may have a cylindrical shape.

In the non-equal height chemical mechanical polishing dresser of the present invention, the tip orientation, the tip angle or the distance between the grinding tips of the grinding tips may be arbitrarily changed according to user requirements or grinding conditions. In the non-equal height chemical mechanical polishing dresser of the present invention, the grinding tips may have the same tip orientation, or the grinding tips may have different tip orientation; in one aspect of the present invention, The grinding tips may all face the workpiece being polished (ie, the polishing pad) at a vertical angle; in another aspect of the creation, the grinding tips may all face the workpiece being polished at a non-perpendicular angle; In a non-equal height chemical mechanical polishing dresser, the grinding tips may have the same tip angle, or the grinding tips may have different tip angles; in one aspect of the present invention, the grinding tips The tip angles may all be 60 degrees, 90 degrees, or 120 degrees; in another aspect of the creation, the tip angles of the grinding tips may be partially 60 degrees, a portion is 90 degrees, and depending on the needs of the user. Without any change, this creation is not limited to this. In addition, in the non-equal height chemical mechanical polishing dresser of the present invention, the grinding tips may have the same pitch, or the grinding tips may have different spacings; in one aspect of the present creation, the The pitch of the grinding tips may all be 1.5 times, 2 times, 3 times, or more than the outer diameter of the grinding tips; in another aspect of the creation, the spacing of the grinding tips may be partially The outer diameter of the grinding tip is twice as large as the outer diameter of the grinding tip, and is arbitrarily changed according to the user's needs. The creation is not limited thereto.

In the non-equal height chemical mechanical polishing dresser of the present invention, the thickness of the bottom substrate and the polishing units can be arbitrarily changed according to user requirements or grinding conditions. In the non-equal height chemical mechanical polishing dresser of the present invention, the thickness of the bottom substrate may be 10 mm to 200 mm, preferably the thickness of the bottom substrate may be 60 mm to 100 mm, more preferably the bottom substrate. The thickness may be 80 mm; in addition, in the non-equal height of the chemical mechanical polishing dresser of the present invention, the grinding units may have the same thickness, or the grinding units may have different thicknesses; In a preferred embodiment, the grinding units may have a thickness of 5 mm to 100 mm, preferably the grinding unit may have a thickness of 15 mm to 30 mm, and preferably the grinding unit may have a thickness of 20 mm.

In the non-equal height chemical mechanical polishing dresser of the present invention, an intermediate layer may be further disposed between the polishing layer and the polishing unit substrate, and the intermediate layer is used to lift the polishing layer and the polishing unit substrate. The bonding strength between the intermediate layers may be at least one selected from the group consisting of alumina, tantalum carbide, and aluminum nitride; in one aspect of the present invention, the intermediate layer may be composed of tantalum carbide.

In the non-equal height chemical mechanical polishing dresser of the present invention, the intermediate layer may be formed by physical vapor deposition, chemical vapor deposition, soldering or brazing, and any method known in the art may be used. This creation is not limited to this.

In the non-equal height chemical mechanical polishing dresser of the present invention, the material of the polishing layer may be single crystal diamond or polycrystalline diamond; in one aspect of the creation, the material of the polishing layer is polycrystalline Diamonds, and their crystal size may range from 5 nanometers to 50 micrometers; in another aspect of the present invention, the crystal size ranges from 10 nanometers to 20 micrometers.

In the non-equal height chemical mechanical polishing dresser of the present invention, the polishing unit substrate may be a conductive substrate or an insulating substrate; wherein the conductive substrate may be patterned by electric discharge to form a plurality of surface tips Or the insulating substrate may be formed into a patterned surface of a plurality of surface tips by mechanical polishing or laser processing, and then the polishing layer is formed on the polishing unit substrate having a plurality of surface tips by chemical vapor deposition And the polishing layer has a plurality of polishing tips, or the surface of the polishing unit substrate is a planarized surface, and then the polishing layer is formed on the polishing unit substrate by chemical vapor deposition, and the The abrasive layer has a plurality of abrasive tips. In the above-mentioned non-equal height chemical mechanical polishing dresser, the composition of the insulating substrate may be a ceramic material or a single crystal material; in one aspect of the present invention, the ceramic material may be tantalum carbide; In another aspect of the present invention, the single crystal material may be tantalum or aluminum oxide. In the unequal height chemical mechanical polishing conditioner of the present invention, the conductive substrate may be composed of molybdenum, tungsten, or tungsten carbide.

In the non-equal height chemical mechanical polishing dresser of the present invention, the composition of the bonding layer can be arbitrarily changed according to the conditions and requirements of the grinding processing, and the composition of the bonding layer can be ceramic material, brazing material, plating material, Metal materials, or polymer materials, this creation is not limited to this. In one aspect of the present invention, the bonding layer may be a brazing material, and the brazing material may be at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, and combinations thereof. . In another aspect of the present invention, the polymer material may be an epoxy resin, a polyester resin, a polyacrylic resin, or a phenolic resin. In addition, in the non-equal height chemical mechanical polishing dresser of the present invention, the material and size of the bottom substrate may be arbitrarily changed according to the conditions and requirements of the grinding process, wherein the material of the bottom substrate may be a stainless steel substrate or a die steel. The present invention is not limited to the substrate, the metal alloy substrate, the ceramic substrate or the plastic substrate or a combination thereof. In a preferred aspect of the present invention, the material of the substrate may be a stainless steel substrate.

In the non-equal height chemical mechanical polishing dresser of the present invention, the bottom substrate may be a planar substrate or a groove substrate; in one aspect of the present invention, the bottom substrate may be a planar substrate, in another aspect of the present creation. The bottom substrate may be a groove substrate.

Therefore, the effect of this creation is that a unequal height chemical mechanical polishing dresser can be used to adjust the roughness of the surface to be polished and to increase the drainage of the slurry. In summary, the present invention is characterized in that a plurality of grinding unit combinations are fixed on the base substrate to avoid deformation of the bottom substrate and uniformity of processing to obtain a surface with desired processing uniformity.

The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate the other advantages and effects of the present invention from the disclosure herein. In addition, the present invention may be implemented or applied by various other specific embodiments, and various modifications and changes may be made without departing from the spirit of the invention.

Example 1

Please refer to FIG. 1A , which is a schematic diagram of a non-equal height chemical mechanical polishing dresser according to the first embodiment of the present invention. First, a stainless steel base substrate 10 having a thickness of 80 mm and being a flat substrate is provided; then, a bonding layer 11 is disposed on the base substrate 10, and second, a plurality of polishing units 12 are provided, wherein each polishing The unit 12 has an abrasive layer 14 and a polishing unit substrate 13 which is a ceramic substrate composed of tantalum carbide, and the polishing unit substrate 13 has two different thicknesses of 20 mm and 30 mm, and the polishing unit substrate The surface of 13 is a planarized surface, and then, the polishing layer 14 of the same thickness is formed by chemical vapor deposition, and the polishing layer 14 has a plurality of polishing tips, and the polishing tips are formed into pyramids, for example, a quadrangular pyramid shape (as shown in FIG. 5A) and the same tips have the same tip orientation, the same tip angle, and are arranged on the polishing unit substrate by a continuous array; further, the polishing units 12 have the first The height of the tip and the height of the second tip cause the grinding units 12 to form different tip heights to form a non-equal height chemical mechanical polishing dresser 1. Referring to FIG. 1B, the polishing units 12 and 12' on the bonding layer 11 have two different tip heights, wherein the polishing unit 12 having the first tip height and the polishing unit 12' having the second tip height The height difference (H) is 20 micrometers, and the grinding unit 12 has a higher tip height than the grinding unit 12', and therefore, the grinding unit 12' having the second tip height is used to grind the workpiece during the grinding process ( That is, the shallow groove formed by the polishing pad can adjust the roughness of the surface to be polished, and the deep groove formed by the polishing unit 12 having the first tip height to the workpiece can provide drainage of the slurry. Please refer to FIG. 4. FIG. 4 is a schematic cross-sectional view of the non-equal height chemical mechanical polishing conditioner of Embodiment 1. In FIG. 4, the polishing units 12 and 12' having different heights on the base substrate 10 and the bonding layer 11 respectively have a first tip height 14 in a grid pyramid shape and a second tip in a white pyramid shape. The height is ground 14', and the polishing units 12 and 12' are arranged in an annular alternating manner.

Example 2

Please refer to FIG. 2. FIG. 2 is a schematic diagram of a non-equal height chemical mechanical polishing dresser according to the second embodiment of the present invention. Embodiment 2 is substantially the same as the apparatus of the non-equal height chemical mechanical polishing dresser described in the foregoing Embodiment 1, except that Embodiment 1 is formed by a bonding layer of the same thickness and a grinding unit of different thickness. Embodiment 2 is formed by a bonding layer of different thicknesses and a grinding unit of the same thickness. First, a bottom substrate 20 of stainless steel having a thickness of 80 mm and being a planar substrate is provided; then, a bonding layer 21 is disposed on the base substrate 20, and second, a plurality of polishing units 22 are provided, wherein each polishing unit 22 has a polishing layer 24 and a polishing unit substrate 23, the polishing unit substrate 23 is a ceramic substrate composed of tantalum carbide, and the thickness of the polishing unit substrate 23 is 20 mm, and the surface of the polishing unit substrate 23 is a flattened surface. Next, the polishing layer 24 of the same thickness is formed by chemical vapor deposition, and the polishing layer 24 has a plurality of polishing tips, and the polishing tips are formed in a pyramid shape, for example, a quadrangular pyramid shape (as shown in FIG. 5A). And the polishing tips have the same tip orientation, the same tip angle, are arranged on the polishing unit substrate by a continuous array; then, the heights of the polishing units 22 are adjusted by different thicknesses of the bonding layer 21, The grinding units 22 are formed to have different tip heights to form a non-equal height chemical mechanical polishing dresser 2.

Example 3

Please refer to FIG. 3 , which is a schematic diagram of the non-equal height chemical mechanical polishing dresser of the third embodiment. Embodiment 3 is substantially the same as the apparatus of the non-equal height chemical mechanical polishing dresser described in the foregoing Embodiment 1, except that Embodiment 1 is formed by a bonding layer of the same thickness and a grinding unit of different thickness. The polishing unit of Embodiment 3 is formed of different thickness bonding layers and polishing units of different thicknesses. First, a stainless steel bottom substrate 30 having a thickness of 80 mm and being a planar substrate is provided; then, a bonding layer 31 is disposed on the bottom substrate 30, and secondly, a plurality of polishing units 32 are provided, wherein each polishing The unit 32 has an abrasive layer 34 and a polishing unit substrate 33, wherein the polishing unit substrate 33 is a ceramic substrate composed of tantalum carbide, and the polishing unit substrate 33 has two different thicknesses of 20 mm and 30 mm, and the polishing unit substrate The surface of 33 is a planarized surface, and then, the polishing layer 34 of the same thickness is formed by chemical vapor deposition, and the polishing layer 34 has a plurality of polishing tips; then, the thickness of the bonding layer 31 is adjusted by the thickness of the bonding layer 31. The height of the grinding unit 32; therefore, the grinding units 32 have a first tip height, a second tip height, and a third tip height to form a non-equal height chemical mechanical polishing dresser 3.

Example 4~5

The present inventive embodiments 4 to 5 are substantially the same as the apparatus of the non-equal height chemical mechanical polishing conditioner described in the first embodiment, except that the polishing tip of the embodiment 1 is formed into a pyramid shape, and the embodiment The 4~5 grinding tips have a variety of specific pattern shapes. Please refer to FIG. 5A to FIG. 5C , which are schematic diagrams showing the outer shape of the grinding tip of the polishing unit of the first and fourth to fifth embodiments.

As shown in FIG. 5A, the plurality of polishing tips 15 of Embodiment 1 have a specific pattern shape of a pyramid shape, for example, a quadrangular pyramid shape, and the polishing tips 15 of the polishing layer 14 are arranged in a continuous array by grinding. On the unit substrate 13. As shown in FIG. 5B, the plurality of polishing tips 35 of Embodiment 4 have a specific pattern shape of a prismatic shape, for example, a quadrangular prism shape, and the polishing tips 35 of the polishing layer 34 are arranged in a continuous array by grinding. On the unit substrate 33. As shown in FIG. 5C, the plurality of polishing tips 45 of the embodiment 5 have a cylindrical shape in a specific pattern, and the polishing tips 45 of the polishing layer 44 are arranged on the polishing unit substrate 43 in a continuous array.

The above-described embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

1,2,3‧‧‧Chemical mechanical polishing dresser
10,20,30‧‧‧ bottom substrate
11,21,31‧‧‧bonding layer
12,12',22,32‧‧‧grinding unit
13,13',23,33,43‧‧‧grinding unit substrate
14,14',24,34,44‧‧‧Abrasive layer
15,35,45‧‧‧ grinding tips

1A to 1B are schematic views of the non-equal height chemical mechanical polishing dresser of the first embodiment. 2 is a schematic view of the non-equal height chemical mechanical polishing dresser of the second embodiment of the present invention. Fig. 3 is a schematic view showing the non-equal height chemical mechanical polishing dresser of the third embodiment. 4 is a schematic cross-sectional view showing a non-equal height chemical mechanical polishing conditioner of Embodiment 1. 5A to 5C are schematic views showing the outlines of the polishing tips of the first embodiment and the fourth to fifth embodiments.

1‧‧‧Chemical mechanical polishing dresser

10‧‧‧Bottom substrate

11‧‧‧Combination layer

12‧‧‧grinding unit

13‧‧‧ Grinding unit substrate

14‧‧‧Abrasive layer

Claims (17)

A non-equal height chemical mechanical polishing dresser comprising: a bottom substrate; a bonding layer disposed on the bottom substrate; and a plurality of polishing units disposed on the bonding layer, each polishing unit having a An abrasive layer and a polishing unit substrate, wherein the polishing layer is a diamond coating formed by chemical vapor deposition, and the polishing layer has a plurality of polishing tips; wherein the polishing units have a first tip height and a first The two tip heights allow the grinding units to form different tip heights. The non-equal height chemical mechanical polishing dresser of claim 1, wherein the height difference between the first tip height and the second tip height is 5 micrometers to 100 micrometers. The non-equal height chemical mechanical polishing dresser of claim 2, wherein the height difference between the first tip height and the second tip height is 15 micrometers to 60 micrometers. The non-equal height chemical mechanical polishing dresser of claim 1, wherein the grinding unit further comprises a third tip height or a fourth tip height. The non-equal height chemical mechanical polishing dresser according to claim 1, wherein the polishing tips are formed into a blade shape, a cone shape, an arc shape, a column shape, a pyramid shape, or a corner column shape. The non-equal height chemical mechanical polishing dresser of claim 1, wherein the grinding tips have the same tip orientation, or the grinding tips have different tip orientations. The non-equal height chemical mechanical polishing dresser of claim 1, wherein the grinding tips have the same tip angle, or the grinding tips have different tip angles. The non-equal height chemical mechanical polishing dresser of claim 1, wherein the grinding tips have the same pitch, or the grinding tips have different spacings. The non-equal height chemical mechanical polishing conditioner according to claim 1, wherein the polishing units have the same thickness, or the polishing units have different thicknesses. The non-equal height chemical mechanical polishing conditioner according to claim 1, further comprising an intermediate layer disposed between the polishing layer and the polishing unit substrate. The non-equal height chemical mechanical polishing conditioner according to claim 10, wherein the intermediate layer is at least one selected from the group consisting of alumina, tantalum carbide, and aluminum nitride. The non-equal height chemical mechanical polishing conditioner according to claim 1, wherein the polishing unit substrate is a conductive substrate or an insulating substrate. The non-equal height chemical mechanical polishing conditioner according to claim 1, wherein the bonding layer is composed of a ceramic material, a brazing material, a plating material, a metal material, or a polymer material. The non-equal height chemical mechanical polishing conditioner according to claim 13, wherein the polymer material is an epoxy resin, a polyester resin, a polyacrylic resin, or a phenol resin. The non-equal height chemical mechanical polishing conditioner according to claim 13, wherein the brazing material is at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, and combinations thereof. Group. The non-equal height chemical mechanical polishing conditioner according to claim 1, wherein the bottom substrate is a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate, a plastic substrate, or a combination thereof. The non-equal height chemical mechanical polishing conditioner according to claim 1, wherein the bottom substrate is a planar substrate or a groove substrate.