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TWM248021U - Structure of probe card - Google Patents

Structure of probe card Download PDF

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Publication number
TWM248021U
TWM248021U TW92219715U TW92219715U TWM248021U TW M248021 U TWM248021 U TW M248021U TW 92219715 U TW92219715 U TW 92219715U TW 92219715 U TW92219715 U TW 92219715U TW M248021 U TWM248021 U TW M248021U
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TW
Taiwan
Prior art keywords
probe
scope
card structure
patent application
buffer layer
Prior art date
Application number
TW92219715U
Other languages
Chinese (zh)
Inventor
Noty Tseng
John Liu
Yeong-Her Wang
Original Assignee
Chipmos Technologies Inc
Chipmos Technologies Bermuda
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Filing date
Publication date
Application filed by Chipmos Technologies Inc, Chipmos Technologies Bermuda filed Critical Chipmos Technologies Inc
Priority to TW92219715U priority Critical patent/TWM248021U/en
Publication of TWM248021U publication Critical patent/TWM248021U/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)

Description

M248021 五、創作說明(l) 【新型所屬之技術領域】 、本創作係有關於一種探測卡,特別係有關於一種具有 溝槽之彈性緩衝層之探測卡。 、 【先前技術】 習知積體電路(integrated circuits )係經過多重 2而形成於-半導體晶圓,在晶圓未切割成多個個別晶 片别,係需測試該晶圓以得知積體電路之電性功能,而用 半導體晶圓之測試設備(test apparatus)係裝設 有一探測卡〔pr〇be card〕,該探測卡係包含有一探測頭 二Pi^b'head〕及一具多層線路之圓盤狀印刷電路板該 米及頭形成有複數個探觸針,用以電性接 路之銲墊⑽)或凸塊(b晴),以供測試該晶圓積體電 M 知之探測卡,如我國專利公告第50481 9號「測 Γ/ Λββ·®之探測卡組合構造」中所揭示者,請參閲第 Μ木測卡組合構造係包含有一電路板1 0、一承座 連接裝^梦基板3Q、i少—第二石夕基板40及複數個電性 =裝置50 ’該承座20係、结合於該電路板1〇,該第一矽基 f童^合於該承座2〇,該第一石夕基板30之上表面係形成 :复=個電極31、銲墊32及在周邊之連接墊33,該第一矽基 υΠί電極31及該些銲墊32係電性連接至對應之 ,以第一矽基板40之下表面係結合於該第一矽基 面,且不覆蓋該第一石夕基板3〇之電極31、銲墊 極第二矽基板4°之上表面係形成複數個電 及在周邊之連接墊42 ’該第二矽基板4〇之該些電極41 五、創作說明(2) ϊ : ϊί ϊ ΐ : ΐ之連接墊42,而該第二石夕基板40之該些 性連ϊΐί\ 接至該第―妙基板3G之銲墊32,該些電 電路板Π0係f性連接該第一矽基板30之連接墊33至該 或金屬II· @ = j些電性連接裝置5 0係為軟性印刷電路板 戈金::線’並無其他介電材料包覆容易產生雜訊。 537496 Γ「另—種習知之探測卡’如我國專利公告第 者,該二制::,連接線路之探測卡組合構造」中所揭示 輸線,X ;二其二有一主基板、一矽基板與複數個同軸傳 供電I·生ί ί 設於該主基板,並具有複數個探針,以 受測裝[該石夕基板之周邊設有至少一插座, 線係連接iiL基ΐ之探針保持電性導通,該些同軸傳輸 ΓΓί ϊϊ座與該主基板’以供改變連接線路, 該插座基板時’必須將該些同軸傳輸線結合至 ίΐίι此你二板,且由於該些同軸傳輸線數量繁多,要 :該些同軸傳輸線--與該主基板連接時,不易準確對 【新型内容】 一 ”本創作之主要目的係在於提供一種探測卡構造,利用 :彈性緩衝層形成有複數個溝槽,當複數個同軸電缆裝設 J垓彈性緩衝層’並與一探測頭連接時,卩該些溝槽導引 j 2同軸電缆,使該些同軸電纜準確對位並裝設於該彈性 緩衝層。 本創作之次一目的係在於提供一種探測卡構造,利用M248021 V. Creation Instructions (l) [Technical Field to which the New Type belongs] This creation relates to a detection card, and particularly to a detection card with a grooved elastic buffer layer. [Previous technology] It is known that integrated circuits are formed on a semiconductor wafer through multiple 2s. When the wafer is not cut into multiple individual wafer types, the wafer needs to be tested to know the integrated circuits. Electrical function, and a test apparatus using a semiconductor wafer is equipped with a probe card [pr0be card], the probe card includes a probe head (Pi ^ b'head) and a multilayer circuit A plurality of probe pins are formed on the meter and the head of the disc-shaped printed circuit board for electrically connecting the solder pads 晴) or the bumps (b), for testing the detection of the wafer integrated circuit. Card, as disclosed in China's Patent Bulletin No. 50481 9 "Detection of Γ / Λββ · ® Probe Card Combination Structure", please refer to the Mth wooden test card combination structure system including a circuit board 10, a socket connection The mounting substrate 3Q, less i-the second stone substrate 40 and a plurality of electrical properties = device 50 'the socket 20 series, combined with the circuit board 10, the first silicon-based substrate is combined with the substrate The seat 20 is formed on the upper surface of the first stone substrate 30: a plurality of electrodes 31, pads 32, and The connection pad 33, the first silicon-based electrode 31 and the solder pads 32 are electrically connected to the corresponding ones, and the lower surface of the first silicon substrate 40 is bonded to the first silicon-based surface without covering the first silicon-based surface. The electrodes 31 of the first silicon substrate 30 and the pads 4 ° above the second silicon substrate are formed with a plurality of electrical and connecting pads 42 'around the second silicon substrate 40. The electrodes 41 Creation instructions (2) ϊ: ϊί ϊ ΐ: 连接 of the connection pad 42, and the sexual connection of the second stone substrate 40 is connected to the pad 32 of the 3rd wonderful substrate 3G, the electrical circuit boards Π0 is f-connected to the connection pad 33 of the first silicon substrate 30 to the or metal II. @ = J These electrical connection devices 5 0 is a flexible printed circuit board Gokin :: line 'and no other dielectric material package Overlay is prone to noise. 537496 Γ "Another kind of conventional probe card" is the first system in China's patent announcement, the two systems ::, the combination structure of the probe card for the connection line, X; two of them have a main substrate, a silicon substrate It is provided with a plurality of coaxial transmission and supply power sources I. The light is provided on the main substrate, and has a plurality of probes to be tested. [The periphery of the Shixi substrate is provided with at least one socket. To maintain electrical continuity, the coaxial transmission ΓΓί holder and the main substrate are used to change the connection line. When the socket substrate is used, the coaxial transmission lines must be combined with the two boards, and because of the large number of coaxial transmission lines To: The coaxial transmission lines-when connected to the main substrate, it is not easy to accurately [new content] "The main purpose of this creation is to provide a probe card structure, using: elastic buffer layer formed with a plurality of grooves, When a plurality of coaxial cables are provided with a J 垓 elastic buffer layer 'and connected to a detection head, the grooves guide the j 2 coaxial cables, so that the coaxial cables are accurately aligned and installed in the elastic buffer. Floor The second purpose of this creation is to provide a probe card structure that uses

第6頁 M248021 五、創作說明(3) -:性緩衝層設於一基座與一探測頭之間 頭在測試一半導體晶圓時之應力。 收錢測 依本創作之探測卡構造,其係包含一電路板、一 座、一彈性緩衝層、一探測頭及複數個二 電,板係具有-表面及一定位孔,該基座係 :::孔’該彈性緩衝層係設於該基座,,亥彈性緩衝層: 嫜此、鲞^面與至少一側面,該正面係形成有複數個溝槽, ^二溝槽之一端係顯露於該側面,該探測頭係設於該彈性 缓衝層、,該探測頭係具有一探觸面與一背面,該探觸面係 形成有複數個探觸針,該背面係形成有複數個導接端,該 些探觸針係與該些導接端電性連接,每一同軸電纜係包含 有一中心導線,每一中心導線包覆有一外介電層,每一中 :導線係具有一第一端及一第二端,該些中心導線之第一 知係不被該些外介電層包覆,並設於該彈性緩衝層之該些 溝槽’該些中心導線之第二端係設於該電路板之該表面, 用以傳輸測試訊號。 【實施方式】 參閱所附圖式,本創作將列舉以下之實施例說明。 依本創作之一具體實施例,請參閱第2圖,一種探測 卡100構造’其係包含一電路板110、一基座(Base ) 1 2 0、一彈性緩衝層1 3 0、一探測頭1 4 0及複數個同軸電纜 CCoaxial Cable ) 150,其中該電路板11〇係為一形成有 探測電路之多層印刷電路板或多層陶瓷電路板,以作為裝 配至半導體測試機台(圖未繪出)之傳輸介面,該電路板Page 6 M248021 V. Creative Instructions (3)-: The buffer layer is placed between a base and a probe, and the stress of the head when testing a semiconductor wafer. The collection of money is based on the structure of the probe card created by this article. It consists of a circuit board, an elastic buffer layer, a probe head, and a plurality of second power units. The board system has a surface and a positioning hole. The base system :: : Hole 'The elastic buffer layer is provided on the base, and the elastic buffer layer is: 嫜 Here, 鲞 ^ face and at least one side, the front face is formed with a plurality of grooves, and one end of the two grooves is exposed at On the side, the probe head is provided on the elastic buffer layer, the probe head has a probe surface and a back surface, the probe surface is formed with a plurality of probe pins, and the back surface is formed with a plurality of guides. Terminals, the probe pins are electrically connected to the lead terminals, each coaxial cable system includes a center wire, each center wire is covered with an outer dielectric layer, each of: the wire system has a first One end and a second end, the first system of the center wires is not covered by the outer dielectric layers, and is disposed in the grooves of the elastic buffer layer, and the second end system of the center wires It is arranged on the surface of the circuit board and is used for transmitting test signals. [Embodiment] With reference to the attached drawings, the present invention will enumerate the following embodiment descriptions. According to a specific embodiment of the present invention, please refer to FIG. 2, a structure of a detection card 100 ′ includes a circuit board 110, a base 1 2 0, an elastic buffer layer 1 3 0, and a detection head. 1 40 and a plurality of coaxial cables (CCoaxial Cable) 150, wherein the circuit board 110 is a multilayer printed circuit board or a multilayer ceramic circuit board formed with a detection circuit for assembling to a semiconductor test machine (not shown in the figure) ) Transmission interface, the circuit board

第7頁 M248021 五、創作說明(4)Page 7 M248021 V. Creation Instructions (4)

110之材質係為FR-4、FR-5或BT,其係具有一表面111及一 定位孔11 2,該定位孔1 1 2係可貫穿該電路板11 〇或不貫穿 該電路板11 0,該定位孔11 2係呈矩形,該基座1 2 0之材質 係為紹、鐵或銅等金屬,該基座1 2 〇之尺寸係不大於該定 位孔1 1 2,以設於該電路板1 1 〇之定位孔丨丨2,該彈性緩衝 層1 3 0係設於該基座1 2 〇,該彈性緩衝層1 3 〇材質係為聚亞 醯胺〔Polyimide,PI〕、矽膠或橡膠,以保護該探測頭 1 40並吸收該探測頭]4〇在測試一半導體晶圓時之應力,該 彈性緩衝層130係具有一正面1 31與至少一側面132,該正 面131係形成有複數個v形或u形之溝槽133,該些溝槽133 之一端係顯露於該側面丨32,該些溝槽丨33係填充有銲料 160 或異方性導電膠〔anis〇tr〇pic conductive paste , ACP〕,一黏膠層170設於該彈性緩衝層13〇與該探測頭u〇 之間’使該探測頭140黏設於該彈性緩衝層130上,該探測 頭1 40之材質係可為陶瓷基板或矽基板,以減少該探測頭 1 40與該半導體晶圓之熱膨脹係數差異,該探測頭1 40係具 有一探觸面141與一背面142,該探觸面141係形成有複數 個探觸針143,該些探觸針143係以微機電系統〔Micro Electro Mechanical System,MEMS〕技術所形成,其係The material of 110 is FR-4, FR-5 or BT. It has a surface 111 and a positioning hole 11 2. The positioning hole 1 1 2 can pass through the circuit board 11 0 or not pass through the circuit board 110. The positioning hole 11 2 is rectangular. The material of the base 1 2 0 is metal such as Shao, iron or copper, and the size of the base 1 2 0 is not larger than the positioning hole 1 12 to be provided in the Positioning holes of the circuit board 1 1 0 2 The elastic buffer layer 1 30 is provided on the base 12 2 The material of the elastic buffer layer 1 3 0 is polyimide (PI), silicone Or rubber to protect the probe head 1 40 and absorb the probe head] 40. When testing a semiconductor wafer, the elastic buffer layer 130 has a front surface 1 31 and at least one side surface 132, and the front surface 131 is formed. There are a plurality of v-shaped or u-shaped grooves 133. One end of the grooves 133 is exposed on the side 32, and the grooves 33 are filled with solder 160 or anisotropic conductive adhesive [anis〇tr〇 pic conductive paste, ACP], an adhesive layer 170 is provided between the elastic buffer layer 13 and the probe u ′, so that the probe 140 is adhered to the elastic buffer. On layer 130, the material of the probe head 40 may be a ceramic substrate or a silicon substrate to reduce the difference in thermal expansion coefficient between the probe head 40 and the semiconductor wafer. The probe head 40 includes a probe surface 141 and A back surface 142, the probe surface 141 is formed with a plurality of probe pins 143, and the probe pins 143 are formed by Micro Electro Mechanical System (MEMS) technology.

具有多種可行之型態,例如呈垂直狀之垂直探觸針或具有 變折之彈性探觸針等,用以測試待測之半導體裝置,該探 1頭1 40之背面1 42係形成有複數個導接端1 44,該些導接 端144係為銲球或凸塊並對應該些溝槽133,而與該些溝槽 133中之銲料16〇結合,在本實施例中,該探測頭14〇係形It has a variety of feasible types, such as a vertical vertical stylus or a flexible elastic stylus with a bent shape, etc., for testing the semiconductor device to be tested. Lead terminals 144, the lead terminals 144 are solder balls or bumps corresponding to the grooves 133, and are combined with the solder 16 in the grooves 133. In this embodiment, the detection Head 14o series

第8頁 M248021 五、創作說明(5) 成有複數個導通孔1 4 5,該些導通孔1 4 5係貫穿該探觸面 1 4 1與該背面1 4 2,該些探觸針1 4 3係經由該些導通孔1 4 5與 該些導接端1 4 4電性連接,每一同轴電缆1 5 0係包含有一中 心導線151,每一中心導線151包覆有一外介電層152,較 佳地,該些同軸電纜150之中心導線151與外介電層152之 間設有内介電層與導電遮套,即該些外介電層152包覆該 些導電遮套,該些導電遮套包覆該些内介電層,該些内介 電層包覆該些中心導線151,每一中心導線151係具有一第 一端151a及一第二端151b,該些中心導線151之第一端 151a係不被該些外介電層152、内介電層與導電遮套包 覆,且該些中心導線1 5 1之第一端1 5 1 a係設於該彈性緩衝 層1 3 0之該些溝槽1 3 3,較佳地,該些中心導線1 51之第一 端1 51 a係形成有鮮料1 6 〇,使得該些中心導線1 5 1之第一端 151a與該些溝槽133中之銲料160緊密結合,該些中心導線 1 5 1之第二端1 5 1 b係設於該電路板1 1 〇之該表面1 π,用以 傳輸測試訊號。 當該些同軸電缆1 5 〇裝設於該彈性緩衝層1 3 〇時,利用 形成於該彈性緩衝層1 3〇之該些溝槽丨33導引該些同軸電纜 1 5 0 ’使該些同軸電纜丨5 〇準確對位,並使該些同軸電纜 1 50與該探測頭140連接,此外,由於該彈性緩衝層13〇係 設於該基座1 2 0與該探測頭丨4 〇之間,可吸收該探測頭1 4 0 在測試半導體晶圓時之應力。 本創作之保護範圍當視後附之申請專利範圍所界定者 為準’任何熟知此項技藝者,在不脫離本創作之精神和範Page 8 M248021 V. Creation instructions (5) A plurality of through holes 1 4 5 are formed. The through holes 1 4 5 are penetrating the probe surface 1 4 1 and the back surface 1 4 2 and the probe pins 1 The 4 3 series are electrically connected to the lead ends 1 4 4 through the through holes 1 4 5. Each coaxial cable 1 50 includes a center wire 151, and each center wire 151 is covered with an outer dielectric. The electrical layer 152, preferably, an inner dielectric layer and a conductive shield are provided between the center wires 151 and the outer dielectric layer 152 of the coaxial cables 150, that is, the outer dielectric layers 152 cover the conductive shields. Sleeves, the conductive shields covering the inner dielectric layers, the inner dielectric layers covering the center conductors 151, each center conductor 151 having a first end 151a and a second end 151b, the The first ends 151a of the center wires 151 are not covered by the outer dielectric layer 152, the inner dielectric layer, and the conductive shield, and the first ends 1 5 1 a of the center wires 1 5 1 are provided at The grooves 1 3 3 of the elastic buffer layer 1 3 0, preferably, the first ends 1 51 a of the center wires 1 51 are formed with fresh material 1 6 0, so that the center wires 1 5 1 First end 151a The plurality of solder 160 in grooves 133 closely, the plurality of center conductors 151 of the second end 151 disposed in line B of the surface of the circuit board 1 π 1 1 billion, the test signal for transmission. When the coaxial cables 150 are installed in the elastic buffer layer 130, the grooves formed in the elastic buffer layer 130 are used to guide the coaxial cables 150 to make the These coaxial cables are accurately aligned, and the coaxial cables 150 are connected to the probe 140. In addition, since the elastic buffer layer 13 is provided on the base 120 and the probe 1, 4 In between, it can absorb the stress of the probe 1 40 when testing the semiconductor wafer. The scope of protection of this creation shall be determined by the scope of the attached patent application ’Anyone who is familiar with this skill will not deviate from the spirit and scope of this creation

第9頁 M248021Page 9 M248021

第10頁 M248021Page 10 M248021

圊式簡單說明 C ® 4簡單說明】 & 第1圖:我國專利公告第5048 1 9號之測試半導體晶圓之探 測卡組合構造之截面示意圖;及 第2圖·依本創作之一具體實施例,一種探測卡構造之截 面示意圖。 元件符號簡單說明: 10 電路板 2 0 承座 30 第一矽基板 31 33 連接墊 40 第二矽基板 41 50 電性連接裝 置 100 探測卡 110 電路板 111 120 基座 130 彈性緩衝層 131 133 溝槽 140 探測頭 141 143 探觸針 144 150 同軸電規 151 151b 第二端 152 160 銲料 170 黏膠層 電極 32 銲墊 電極 42 連接墊 表面 112 定位孔 正面 132 側面 探觸面 142 背面 導接端 145 導通孔 中心導線 外介電層 151a 第一端Simple description of the formula C ® 4] & Figure 1: Cross-sectional schematic diagram of the structure of the probe card combination for testing semiconductor wafers in China Patent Bulletin No. 5048 1 9; and Figure 2 • Implementation in accordance with one of this creation Example, a schematic cross-sectional view of a probe card structure. Simple explanation of component symbols: 10 circuit board 2 0 socket 30 first silicon substrate 31 33 connection pad 40 second silicon substrate 41 50 electrical connection device 100 detection card 110 circuit board 111 120 base 130 elastic buffer layer 131 133 groove 140 Probe head 141 143 Probe pin 144 150 Coaxial electrical gauge 151 151b Second end 152 160 Solder 170 Adhesive layer electrode 32 Pad electrode 42 Connection pad surface 112 Positioning hole front side 132 Side contact surface 142 Back side lead end 145 Conduction Hole center wire outer dielectric layer 151a first end

第11頁Page 11

Claims (1)

M248021M248021 【申請專利範圍】 1、一種探測卡構造,包含·· 電路板,其係具有一表面; 一基座,其係設於該電路板; 彈性緩衝層 有一正 面與至少 其係設於該基座,該彈性緩衝層係具 側面,該正面係形成有複數個溝槽,、 該些溝槽之一端係顯露於該側面 係設於該彈性緩衝層,該探測頭係具^ 面與一背面,該探觸面係形成有複數個探觸針, 複數個導接端,該些探觸針係與該些笔 該些導接端係對應該些溝槽;及 一 一探測頭,其 一探觸 該背面 接端電 複數 係形成有 性連接, 個同軸電[Scope of patent application] 1. A probe card structure, including a circuit board having a surface; a base provided on the circuit board; an elastic buffer layer having a front surface and at least it attached to the base The elastic buffer layer has a side surface, the front surface is formed with a plurality of grooves, one end of the grooves is exposed on the side surface and the elastic buffer layer is provided, and the probe head has a ^ surface and a back surface, The probe surface is formed with a plurality of probe pins and a plurality of lead terminals, and the probe needles correspond to the grooves with the lead terminals of the pens; and a probe head, a probe The plural contacts are electrically connected to form a sexual connection. 線,每一中心導 具有一 電層包 端係設 2、如申 性緩衝 第一端及 覆,並設 於該電路 請專利範 層之溝槽 缆’母一同轴電缆係包含有一中心導 線包覆有一外介電層,每一中心導線係 一第二端,該些第一端係不被該些外介 於該彈性緩衝層之該些溝槽,該些第二 板之該表面。 圍第1項所述之探測卡構造,其中該彈 係呈V形。 3、 如申請專利範圍第1項所述之探測卡構造,其另包含 有一異方性導電膠,其係填充於該些溝槽。 4、 如申請專利範圍第1項所述之探測卡構造,其中該些 中心導線之第一端係形成有一銲料。Cable, each center conductor has an electrical layer envelope end system 2. If the first end of the cable is buffered, and the circuit is provided in the patented layer of the trench cable, the female-coaxial cable system includes a center The wires are covered with an outer dielectric layer, and each center wire is a second end, and the first ends are not surrounded by the grooves outside the elastic buffer layer, and the surface of the second plates. . The detection card structure described in item 1, wherein the bomb is V-shaped. 3. The probe card structure as described in item 1 of the scope of patent application, further comprising an anisotropic conductive adhesive, which is filled in the grooves. 4. The probe card structure described in item 1 of the scope of patent application, wherein the first ends of the center wires are formed with solder. 5、如申請專利範圍第1項所述之探測卡構造,其中該探 測頭之導接端係為銲球。5. The probe card structure described in item 1 of the scope of patent application, wherein the lead end of the probe is a solder ball. 第12頁 M248021Page 12 M248021 、如申請專利範圍第1項所述之探測卡構造,其中該探 測頭係形成有複數個導通孔。 7、如申請專利範圍第丨項所述之探測卡構造,其另包含 有黏膠層’其係設於該探測頭之背面與該彈性緩衝層 之間。 、如申請專利範圍第1項所述之探測卡構造,其中該電 路板係形成有一定位孔。 、如申請專利範圍第1項所述之探測卡構造,其中該基 座之材質係為金屬。 3、一種探測卡構造,包含: 一電路板; / 一彈性緩衝層,其係設於該電路板,該彈性緩衝層 係具有至少一側面,該彈性緩衝層係形成有複數個溝 槽’該些溝槽之一端係顯露於該側面; 一探測頭’其係設於該彈性緩衝層,該探測頭係具 有一探觸面,該探觸面係形成有複數個探觸針;及 複數個同軸電纜,該些同軸電纜之一端係設於該彈 性緩衝層之該些溝槽,該些同軸電缆之另一端係設於 該電路板。 1 1、如申請專利範圍第1 〇項所述之探測卡構造,其中該 彈性緩衝層之溝槽係呈V形。 1 2、如申請專利範圍第丨〇項所述之探測卡構造,其另包 含有一異方性導電膠,其係填充於該些溝槽。 1 3、如申請專利範圍第丨〇項所述之探測卡構造,其中該The probe card structure according to item 1 of the scope of patent application, wherein the probe head is formed with a plurality of through holes. 7. The probe card structure as described in item 丨 of the patent application scope, further comprising an adhesive layer, which is disposed between the back surface of the probe head and the elastic buffer layer. The probe card structure as described in the first item of the patent application scope, wherein the circuit board is formed with a positioning hole. The probe card structure as described in item 1 of the scope of patent application, wherein the material of the base is metal. 3. A probe card structure comprising: a circuit board; / an elastic buffer layer provided on the circuit board, the elastic buffer layer having at least one side, and the elastic buffer layer formed with a plurality of grooves. One end of the grooves is exposed on the side; a probe head is provided on the elastic buffer layer, the probe head has a probe surface, and the probe surface is formed with a plurality of probe pins; and For coaxial cables, one end of the coaxial cables is provided in the grooves of the elastic buffer layer, and the other end of the coaxial cables is provided in the circuit board. 11. The probe card structure as described in item 10 of the scope of patent application, wherein the groove of the elastic buffer layer is V-shaped. 1 2. The probe card structure as described in item No. 丨 0 of the patent application scope, which additionally includes an anisotropic conductive adhesive, which is filled in the grooves. 1 3. The probe card structure as described in the scope of application for patent No. 丨 0, wherein the 第13頁 M248021 六、申請專利範圍 探測頭係形成有複數個導通孔。 1 4、如申請專利範圍第1 0項所述之探測卡構造,其另包 含有一黏膠層,其係設於該探測頭與該彈性緩衝層之 間。 1 5、如申請專利範圍第1 0項所述之探測卡構造,其中該 電路板係形成有一定位孔。 1 6、如申請專利範圍第1 0項所述之探測卡構造,其中該 基座之材質係為金屬。Page 13 M248021 6. Scope of patent application The probe head is formed with a plurality of through holes. 14. The probe card structure as described in item 10 of the scope of patent application, which additionally includes an adhesive layer, which is disposed between the probe head and the elastic buffer layer. 15. The detection card structure according to item 10 of the scope of patent application, wherein the circuit board is formed with a positioning hole. 16. The probe card structure as described in item 10 of the scope of patent application, wherein the material of the base is metal. 第14頁Page 14
TW92219715U 2003-11-06 2003-11-06 Structure of probe card TWM248021U (en)

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