TWI836167B - Heat treatment device - Google Patents
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- TWI836167B TWI836167B TW109142698A TW109142698A TWI836167B TW I836167 B TWI836167 B TW I836167B TW 109142698 A TW109142698 A TW 109142698A TW 109142698 A TW109142698 A TW 109142698A TW I836167 B TWI836167 B TW I836167B
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
- C21D1/76—Adjusting the composition of the atmosphere
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
- C21D9/54—Furnaces for treating strips or wire
- C21D9/56—Continuous furnaces for strip or wire
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/04—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity adapted for treating the charge in vacuum or special atmosphere
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
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- General Engineering & Computer Science (AREA)
- Heat Treatment Of Strip Materials And Filament Materials (AREA)
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- Tunnel Furnaces (AREA)
Abstract
[課題]提供一種即使是在還原氣體環境中,也可抑制包含SiO2 的陶瓷纖維製的隔熱材的劣化,且用以將金屬帶進行輝面退火的熱處理裝置。 [解決手段]熱處理裝置具備有用以加熱金屬帶之加熱帶、作為加熱帶之爐內壁使用且為包含SiO2 的陶瓷纖維製之隔熱材、及對加熱帶供給還原性氣體的氣體供給部,且以使露點被保持在可使金屬帶具有輝度的上限露點、和不可使包含於隔熱材之SiO2 還原的下限露點之間的方式,於還原氣體環境中將金屬帶進行輝面退火。[Problem] To provide a heat treatment apparatus that can suppress the deterioration of a heat insulating material made of ceramic fibers containing SiO 2 even in a reducing gas environment and perform glow annealing on a metal strip. [Solution] The heat treatment device is equipped with a heating belt for heating the metal belt, a heat insulating material made of ceramic fiber containing SiO 2 used as the furnace inner wall of the heating belt, and a gas supply part for supplying reducing gas to the heating belt. , and perform glow annealing on the metal strip in a reducing gas environment so that the dew point is maintained between the upper limit dew point that allows the metal strip to have brightness and the lower limit dew point that does not reduce the SiO 2 contained in the heat insulating material. .
Description
本發明是有關於一種用以將金屬帶進行輝面退火的熱處理裝置。The present invention relates to a heat treatment device for bright annealing a metal strip.
已知有為了除去利用冷軋所生成之金屬帶的內部應力,而在還原氣體環境中進行金屬帶之輝面退火的熱處理裝置。There is known a heat treatment apparatus for performing bright annealing of a metal strip in a reducing gas atmosphere in order to remove the internal stress of the metal strip generated by cold rolling.
專利文獻1揭示一種低溫保持帶具有由鋼板構成之馬弗(muffle)構造的熔融鍍敷用連續退火爐,且是金屬帶朝水平方向搬送的所謂橫型爐。專利文獻2揭示一種爐內以耐火磚內襯的金屬帶的橫型輝面退火爐。專利文獻3揭示一種爐內的隔熱材是以陶瓷纖維構成之鍍鎳薄鋼板的製造設備。
[先行技術文獻]
[專利文獻]
[專利文獻1]日本實公平03-1472號公報 [專利文獻2]日本特許4268281號公報 [專利文獻3]日本特開2003-201595號公報 [發明的概要] [發明所欲解決的課題][Patent document 1] Japanese Statute No. 03-1472 [Patent document 2] Japanese Patent No. 4268281 [Patent document 3] Japanese Patent Publication No. 2003-201595 [Summary of the invention] [Problem to be solved by the invention]
在專利文獻1中,由於爐體的馬弗構造是由鋼板構成,所以變形會因在高溫的加熱而產生。特別是橫型爐的情況,由於頂板被以鋼板製作的區間長,所以頂板會因自重而垂下,形狀上的變形變大,爐內的氣流產生紊亂而使爐內的溫度分布變差。在專利文獻2中,耐火磚的變形雖然難以發生,然而由於耐火磚的重量大,所以組裝或維修或交換時的作業性低劣,退火爐的重量也變重,所以需要將退火爐設置在有耐荷重性的場所。In
在專利文獻3中,因為在約800℃且在非還原氣體環境中進行鋼板的退火和鍍鎳的擴散處理,所以使用陶瓷纖維。陶瓷纖維重量輕且作業性優異,然而由於包含SiO2
,所以在高溫的還原氣體環境中,發生SiO2
的還原,SiO2
變化成Si。因此,便發生陶瓷纖維的崩壞,而需要頻繁地進行陶瓷纖維的維修及交換。在陶瓷纖維崩壞時,會發生粉塵,粉塵會落下到金屬帶之上。特別是,在橫型爐的場合,由於頂板的面積變大,所以粉塵的落下量變多,金屬帶的品質便降低。In
因此,本發明的課題在於提供一種即使於還原氣體環境中,也可抑制包含SiO2 之陶瓷纖維製的隔熱材的劣化且用以將金屬帶進行輝面退火的熱處理裝置。 [用以解決課題的手段]Therefore, the subject of the present invention is to provide a heat treatment device for bright annealing a metal strip while suppressing the degradation of a heat insulating material made of ceramic fiber containing SiO2 even in a reducing gas environment. [Means for Solving the Problem]
為了解決上述課題,本發明之一態樣中的熱處理裝置,其特徵在於具備有:加熱帶,用以加熱金屬帶;隔熱材,作為前述加熱帶之爐內壁使用,為包含SiO2 的陶瓷纖維製;及氣體供給部,對前述加熱帶供給還原性氣體,以使露點被保持在可使前述金屬帶具有輝度的上限露點、與不可使包含於前述隔熱材之前述SiO2 還原的下限露點之間的方式,在還原氣體環境中將前述金屬帶進行輝面退火。In order to solve the above-mentioned problem, a heat treatment device in one embodiment of the present invention is characterized in that it comprises: a heating belt for heating a metal belt; a heat insulating material, used as the inner wall of the furnace of the aforementioned heating belt and made of ceramic fiber containing SiO2 ; and a gas supply part, which supplies a reducing gas to the aforementioned heating belt so that the dew point is maintained between an upper limit dew point that can make the aforementioned metal belt have brightness and a lower limit dew point that cannot reduce the aforementioned SiO2 contained in the aforementioned heat insulating material, and the aforementioned metal belt is brightly annealed in a reducing gas environment.
為了解決上述課題,本發明之一態樣中的熱處理裝置是一種用以在還原氣體環境中將金屬帶進行輝面退火的熱處理裝置,其特徵在於前述熱處理裝置具備有:爐體,具有加熱前述金屬帶之加熱帶、及相對於前述加熱帶設於前述金屬帶之搬送方向下游側的冷卻帶;隔熱材,作為前述加熱帶的爐內壁使用,且為包含SiO2 的陶瓷纖維製;氣體供給部,對前述爐體內供給還原性氣體;露點測量部,測量前述加熱帶中之氣體環境的露點;及露點調整部,調整前述露點,基於前述露點測量部所測量出的前述露點,以使前述露點被保持在可使前述金屬帶具有輝度的上限露點、與不可包含於前述隔熱材之前述SiO2 還原的下限露點之間的方式,控制前述露點調整部。 [發明的效果]In order to solve the above-mentioned problem, a heat treatment device in one embodiment of the present invention is a heat treatment device for performing bright annealing on a metal strip in a reducing gas environment, wherein the heat treatment device comprises: a furnace body having a heating belt for heating the metal strip, and a cooling belt disposed on the downstream side of the heating belt in the conveying direction of the metal strip; a heat insulating material used as the furnace inner wall of the heating belt and comprising SiO 2 ceramic fiber; a gas supply unit for supplying reducing gas into the furnace; a dew point measuring unit for measuring the dew point of the gas environment in the heating belt; and a dew point adjusting unit for adjusting the dew point, and controlling the dew point adjusting unit based on the dew point measured by the dew point measuring unit so that the dew point is maintained between an upper limit dew point that allows the metal belt to have brightness and a lower limit dew point that cannot be included in the aforementioned heat insulating material to reduce the aforementioned SiO2 . [Effect of the Invention]
由於爐內的氣體環境中的水分越少,越能抑制金屬帶表面的氧化,所以對金屬帶的輝度是有利的,然而作為爐內壁的隔熱材而使用重量輕的陶瓷纖維時,由於會朝使包含於隔熱材之SiO2 還原的方向作用,所以對隔熱材是不利的。因此,本案之發明人著眼於存在可使輝度維持和防止SiO2 還原共存之適當範圍的露點(亦即水分量)而達成本發明。The less moisture in the gas environment in the furnace, the more oxidation of the surface of the metal strip can be suppressed, so it is beneficial to the brightness of the metal strip. However, when using lightweight ceramic fibers as insulation materials for the inner wall of the furnace, due to It acts in the direction of reducing SiO 2 contained in the heat insulating material, so it is detrimental to the heat insulating material. Therefore, the inventor of this case focused on the existence of an appropriate range of dew point (that is, moisture content) that can maintain brightness and prevent the reduction of SiO 2 to coexist, and arrived at the present invention.
依據本發明,藉由將在加熱帶之氣體環境的露點(亦即水分量)保持在上限露點及下限露點之間,而使在氣體環境中的水分量對於維持金屬帶之輝度及防止包含於隔熱材之SiO2 還原變成適當。其結果,金屬帶具有輝度,且可防止因包含於隔熱材之SiO2 的還原所造成的隔熱材的劣化。According to the present invention, by keeping the dew point (i.e., the moisture content) of the gas environment in the heating belt between the upper dew point and the lower dew point, the moisture content in the gas environment becomes appropriate for maintaining the brightness of the metal belt and preventing the reduction of SiO2 contained in the thermal insulation material. As a result, the metal belt has brightness and the deterioration of the thermal insulation material caused by the reduction of SiO2 contained in the thermal insulation material can be prevented.
以下,一面參照圖示,一面說明本發明之熱處理裝置1的實施型態。Hereinafter, an embodiment of the
[第1實施型態]
一面參照圖1,一面說明第1實施型態之熱處理裝置1。圖1是第1實施型態之熱處理裝置1的示意斷面圖。[First embodiment]
The
如圖1所示,將金屬帶3連續地進行輝面退火之輝面退火爐(熱處理裝置1)具備有爐體10、氣體供給部9、28、露點測量部22、露點調整部24、27、及控制部20。圖1所示之輝面退火爐(熱處理裝置)1是爐體朝橫向(水平方向)延伸之橫型爐。橫型爐可簡化搬送金屬帶3之搬送機構,且可抑制熱處理裝置1之高度變高。As shown in FIG. 1 , a gloss annealing furnace (heat treatment device 1 ) for continuously performing gloss annealing on a
金屬帶3在圖1中是被從左向右水平地搬送。金屬帶3例如是由包含Cr之不銹鋼材構成。包含Cr之不銹鋼材例如是沃斯田鐵系不銹鋼之SUS304或肥粒鐵系不銹鋼之SUS430。The
爐體10是由鋼製之箱體構成,具有加熱帶12與冷卻帶14。加熱帶12朝橫向(水平方向)延伸,設於金屬帶3之搬送方向上游側(金屬帶3之入側)。加熱帶12藉由加熱部16而被加熱。加熱部16例如是電熱加熱器。控制部20是基於藉由未圖示之溫度測量部所測量出之溫度,來控制成加熱帶12成為預定之退火溫度(此處說的溫度是在退火之加熱步驟及冷卻步驟中的加熱步驟的溫度。)。在本案中之退火溫度是指加熱帶12中之爐內氣體環境溫度。例如在一般之不銹鋼材中,適於輝面退火之退火溫度是800℃到1250℃的範圍,控制部20是以退火溫度落在前述溫度範圍內的方式來控制加熱部16。The
冷卻帶14設於金屬帶3之搬送方向下游側(金屬帶3的出側)。在冷卻帶14,雖是退火因為主要是以放置冷卻來進行冷卻,所以不配設加熱機構及隔熱材17。然而,冷卻帶14也可以是因場合而具備有任何的冷卻機構。The
於所謂爐體10的側壁及頂板及地板的爐壁的內面(爐內壁),安裝有隔熱材17。隔熱材17是包含SiO2
的陶瓷纖維製。隔熱材17例如是可做成藉由將陶瓷纖維製的板材或毛氈插刺到已安裝在爐壁的多數棒狀螺栓並以墊圈狀的金屬件按壓而保持的構成。隔熱材17是以Al2
O3
(氧化鋁)及SiO2
(二氧化矽)為主成分的纖維,例如是Al2
O3
的含有量為30~60質量%及SiO2
的含有量為40~70質量%的氧化鋁-二氧化矽質的陶瓷纖維。The
輝面退火爐1的爐體10的內部被還原性的環境氣體充滿。入口密封輥13及出口密封輥15分別配設於爐體10的入口開口及出口開口。藉由入口密封輥13及出口密封輥15將爐體10的內部保持成比大氣壓稍高的高壓,而防止外氣朝爐體10內侵入。然而,即使以入口密封輥13及出口密封輥15夾著金屬帶3,在入口密封輥13,微量的水分也會在附著於金屬帶3的表面的狀態,被從外氣帶入到爐體10的內部。又,在出口密封輥15,微量的環境氣體會以同樣的型態從爐內流出。因此,便必須經常進行在加熱帶12的氣體環境的露點(水分量)的測量及調整。The interior of the
氣體供給部具備有氣體供給裝置9及第2調節閥28,透過氣體供給配管5將還原性氣體供給至爐體10內,換言之將還原性氣體供給至加熱帶12。氣體供給裝置9例如是氣瓶。還原性氣體是包含氫氣的氣體,例如是氫氣及氮氣以3:1混合後的氣體。藉由調整設於氣體供給配管5的第2調節閥28的開度,而控制還原性氣體的供給量。第2調節閥28的開度是藉由控制部20來控制。藉由還原性氣體的供給,而補充從入口密封輥13及出口密封輥15洩漏的部分。而且,在圖1所示之輝面退火爐1中,雖是採取將氣體供給配管5配置於冷卻帶14之上游側的構成,然而還原性氣體的供給位置並無特別限定。從氣體供給配管5所供給的還原性氣體,作為環境氣體,在包含加熱帶12之爐體10內的全體擴散之後,朝爐體10的外部出去。The gas supply part is equipped with a
以往,從氣體供給裝置9供給的還原性氣體是低露點(亦即低水分量)的氣體,例如在JIS氫氣1級中露點為-70℃的氣體。然而,在本案中,藉由具備有除濕裝置25及加濕裝置26之露點調整裝置24,而可調整爐內的氣體環境的露點,所以從氣體供給裝置9所供給之還原性氣體並不一定要低露點(亦即低水分量)。亦即,作為從氣體供給裝置9所供給的還原性氣體,也可使用包含比以往的JIS氫氣1級多的水分量的氣體,例如在JIS氫氣2級中露點為相當-60℃的氣體。Conventionally, the reducing gas supplied from the
露點測量部22透過露點測量配管6來測量爐體10之加熱帶12中的氣體環境(以下,有稱為「環境氣體」的情況。)的露點。露點測量部22例如是靜電容式露點計或鏡面冷卻式露點計。露點的測量資料被送至控制部20並儲存於控制部20的記憶體部。而且,在圖1所示之輝面退火爐1中,雖是作成將露點測量配管6配置於加熱帶12的下游側的構成,然而露點的測量位置並未特別限定。The dew
露點調整部具備有露點調整裝置24及第1調節閥27,用於調整加熱帶12中之氣體環境的露點。露點調整裝置24具備有除濕裝置25及加濕裝置26之至少一者。藉此,可因應藉由氣體供給部9、28所供給之還原性氣體的露點、和作為目標的氣體環境的露點,來適宜地調整加熱帶12中之氣體環境的露點。The dew point adjustment section includes a dew
露點調整裝置24通過配設於加熱帶12之搬送方向上游側的入側配管7將氣體環境之一部分排出,且在將所排出之氣體環境的露點,亦即水分量調整之後,通過配設於加熱帶12之搬送方向下游側的出側配管8而回到爐體10內。藉由環境氣體在露點調整裝置24及爐體10之間循環,而使加熱帶12中之氣體環境的露點保持在預定的露點。The dew
露點調整裝置24(亦即除濕裝置25及加濕裝置26)是藉由控制部20控制。藉由調整設於入側配管7之第1調節閥27的開度,而控制環境氣體之循環量。第1調節閥27的開度是藉由控制部20控制。The dew point adjustment device 24 (that is, the
除濕裝置25進行氣體環境中所含水分的除去(氣體環境的除濕),具有使氣體環境的露點降低的機能。除濕裝置25例如具有填充了吸附劑的吸附塔及脫離塔。吸附劑為分子濾網(分子篩)等之合成沸石、天然沸石、活性碳、矽膠、氧化鋁、活性氧化鋁等。使用了吸附劑的除濕可易於將除濕後的氣體環境的露點控制為預定的露點,且所得的氣體環境極為清淨。The
加濕裝置26具有如下功能:生成混合了水蒸氣或液相的水、和氣體環境之含水氣體,且將該含水氣體送入到爐體10內,藉此進行朝氣體環境附加水分(氣體環境的加濕),使氣體環境之露點上升。加濕裝置26例如是使氣體環境通過存留於容器的水中的起泡(bubbling)式、對氣體環境將水蒸氣噴射成霧狀的噴嘴式、利用了具有高水蒸氣透過性的中空纖維膜的膜交換式等。
控制部20是電連接於露點測量部22、露點調整裝置24、第1調節閥27、第2調節閥28、加熱部16。控制部20可使用包含CPU(Central Processing Unit)等之運算部、RAM(Random Access Memory)及ROM(Read Only Memory)等之記憶體部的電腦等所構成。The
控制部20依據露點測量部22所測量到的露點,控制氣體供給部9、28和露點調整部24、27。亦即,控制部20藉由控制第2調節閥28的開度,來控制從氣體供給裝置9所供給之還原性氣體的供給量。又,控制部20藉由控制第1調節閥27的開度,來控制露點調整裝置24之環境氣體的循環量。藉此,輝面退火(熱處理)的自動化成為可能。The
控制部20控制成露點調整裝置24中之除濕裝置25或加濕裝置26作動。控制部20控制成除濕裝置25作動時,藉由除去氣體環境中所含之水分,而使氣體環境之露點亦即水分量降低。控制部20控制成加濕裝置26作動時,藉由氣體環境中所含之水分增加,而使氣體環境之露點亦即水分量上升。藉此,輝面退火(熱處理)的自動化成為可能。The
[第1實施型態的其他態樣]
如前述,即使作成藉由入口密封輥13夾持金屬帶3的構成,由於微量的水分也會以附著於金屬帶3之表面的狀態從外氣被帶入爐體10的內部,所以氣體環境的露點(水分量)會上升上去。因此,藉由將露點極低的氫氣使用作為還原性氣體,而可將氣體環境中所含之水分稀釋,降低氣體環境的露點。又,即使使用露點極低的氫氣作為還原性氣體,也可藉由第2調節閥28減少還原性氣體的流量,藉此提高氣體環境的露點。再者,可藉由任何的手段來防止微量的水分從外氣帶入爐體10的內部時,藉由使用露點高的氫氣作為還原性氣體,可使氣體環境中所含之水分增加,提高氣體環境的露點。[Other aspects of the first embodiment]
As mentioned above, even if the
因此,可不使用圖1所示之除濕裝置25及加濕裝置26,來調整加熱帶12中之氣體環境的露點。亦即,如圖4所示,控制部20依據以露點測量部22所測量出的氣體環境的露點,來控制第2調節閥28,而調節藉由氣體供給裝置9所供給的還原性氣體的流量,藉此可調整包含加熱帶12之爐體10中之氣體環境的露點。藉此,輝面退火(熱處理)的自動化成為可能。此處,因應從外氣帶入爐體10內部的水分量,使用露點極低的氫氣或是露點高的氫氣作為從氣體供給裝置9所供給的還原性氣體。如此,氣體供給裝置9及第2調節閥28作為露點調整裝置24a而運作。藉此,藉由簡易的構成而可構成露點調整裝置24a。Therefore, the
[氣體環境的露點的控制]
如上述,爐體10之加熱帶12中的氣體環境中的水分越少,由於會抑制金屬帶3表面的氧化,對金屬帶3的輝度越是有利的,然而由於是朝著使隔熱材17所含之SiO2
還原的方向作用,對隔熱材17是不利的。因此,本案之發明人著眼於存在可使輝度維持與防止SiO2
還原共存之適當範圍的露點(亦即水分量),而達到此發明。[Control of dew point of gas environment] As mentioned above, the less moisture in the gas environment in the
一面參照圖2,一面說明加熱帶12之氣體環境的露點的控制。圖2是示意地說明溫度與氣體環境之露點的關係的圖示。圖2中,橫軸是顯示加熱帶12中之退火溫度及SiO2
的氧化-還原的平衡溫度,縱軸是顯示加熱帶12中之氣體環境的露點。圖2中,A是顯示-30℃的露點的直線,S是顯示SiO2
的氧化-還原的平衡曲線。露點比平衡曲線S高時,SiO2
被氧化,露點比平衡曲線S低時,SiO2
被還原。而且,直線A與退火溫度800℃及1250℃相交的交點分別是a及b,平衡曲線S與平衡溫度800℃及1250℃相交的交點分別是c及d。該等溫度及交點例如是對應不銹鋼材的退火。The control of the dew point of the gas environment of the
氣體環境的露點是對應於包含在氣體環境中的水分的水分量。例如,露點為-30℃時水分量約338(g/m3 ),露點為-35℃時水分量約203(g/m3 ),露點為-40℃時水分量約119(g/m3 ),露點為-45℃時水分量約68(g/m3 ),露點為-50℃時水分量約38(g/m3 ),露點為-55℃時水分量約21(g/m3 ),露點為-60℃時水分量約11(g/m3 ),露點為-65℃時水分量約5.6(g/m3 ),露點為-70℃時水分量約2.7(g/m3 )。因此,隨著氣體環境的露點變低,包含於氣體環境的水分的水分量變少。The dew point of a gas environment is the amount of moisture corresponding to the moisture contained in the gas environment. For example, when the dew point is -30°C, the moisture content is about 338 (g/m 3 ), when the dew point is -35°C, the moisture content is about 203 (g/m 3 ), and when the dew point is -40°C, the moisture content is about 119 (g/m 3 ). 3 ), the moisture content is about 68 (g/m 3 ) when the dew point is -45℃, the moisture content is about 38 (g/m 3 ) when the dew point is -50℃, and the moisture content is about 21 (g/m 3 ) when the dew point is -55℃. m 3 ), the moisture content is about 11 (g/m 3 ) when the dew point is -60℃, the moisture content is about 5.6 (g/m 3 ) when the dew point is -65℃, and the moisture content is about 2.7 (g/m 3 ) when the dew point is -70℃ /m 3 ). Therefore, as the dew point of the gas environment becomes lower, the amount of moisture contained in the gas environment becomes smaller.
金屬帶3的表面氧化時,在金屬帶3的表面便形成氧化皮膜。金屬帶3為包含Cr的不銹鋼材時,形成Cr及Fe與氧化合了的氧化皮膜。對金屬帶3的表面氧化的抑制,被說是希望氣體環境的露點要盡可能低,亦即包含於氣體環境中的水份的水分量要盡可能少。When the surface of the
然而,在實際之熱處理步驟中,了解到形成於金屬帶3表面的氧化皮膜的厚度變得比某一厚度薄時,對金屬帶3的輝度帶來的影響便變少。因此,藉由使氣體環境的上限露點成為-30℃以下,而抑制金屬帶3中之氧化皮膜的形成,金屬帶3具有某一程度以上的輝度,且幾乎沒有製品上的問題。圖2中的直線A是顯示抑制金屬帶3中之氧化皮膜形成的最上限的露點。而且,交點a是在800℃的最上限的露點,交點b是在1250℃的最上限的露點。However, in the actual heat treatment step, it was found that when the thickness of the oxide film formed on the surface of the
將具有輝度之不銹鋼材的金屬帶3商品化時,是適合於將氣體環境的上限露點調整成-30℃以下。於不銹鋼材中,為了獲得輝度的程度較高的金屬帶3,可以將氣體環境的上限露點調整成-45℃以下。為了獲得輝度的程度更高的金屬帶3,可以將氣體環境的上限露點調整成-65℃(圖中的直線X)以下。因此,於不銹鋼材中,因應要被輝面退火之金屬帶3的輝度的程度,可使金屬帶3具有輝度的上限露點是設定成-30℃到-65℃的範圍。依據該構成,可獲得具有所希望之輝度的金屬帶3。When the
於爐壁的內面(爐內壁)配設有陶瓷纖維製的隔熱材17。以往,於橫型的輝面退火爐1中,以拱型堆疊構造使用高純度含有Al2
O3
(氧化鋁)的高純度氧化鋁質的磚塊時,有著所謂因升降爐內溫度時之磚塊的膨脹、收縮,而發生粉塵,使金屬帶3的品質降低的問題。A
在本案之橫型的輝面退火爐1中,可藉由使用包含SiO2
的陶瓷纖維製作為隔熱材17,而使抑制粉塵的發生且獲得高品質的金屬帶3。然而,考量是包含於陶瓷纖維的SiO2
的耐還原性是比Al2
O3
(氧化鋁)低,在高還原性的氣體環境中使用陶瓷纖維時,因SiO2
的還原而使陶瓷纖維劣化且變脆,並發生粉塵。In the horizontal
在本發明,本案的發明人著眼於SiO2
的氧化-還原特性(熱力學的特性),以使包含SiO2
的陶瓷纖維製之隔熱材17即使是在高還原性的氣體環境中也成為可使用。如圖2所示,以SiO2
的氧化-還原的平衡曲線S為邊界,平衡曲線S的上側為SiO2
保持氧化狀態的區域,平衡曲線S的下側為SiO2
被還原的區域。In the present invention, the inventor of the present case focused on the oxidation-reduction characteristics (thermodynamic characteristics) of SiO 2 , so that the
在SiO2
的氧化-還原的平衡曲線S與平衡溫度800℃相交的交點c的露點為約-95℃,在與平衡溫度1250℃相交的交點d的露點為約-60℃。該露點在例如適於不銹鋼材的輝面退火的800℃到1250℃的平衡溫度中,是使包含於隔熱材17之SiO2
不可還原的下限露點。因此,加熱帶12的退火溫度在800℃到1250℃的範圍時,控制部20藉由控制成使氣體環境的露點不低於平衡曲線S,而可使SiO2
不還原。藉此,可防止因陶瓷纖維製的隔熱材17的劣化發生粉塵,而獲得高品質的金屬帶3。The dew point at the intersection c where the equilibrium curve S of oxidation-reduction of SiO2 intersects the equilibrium temperature of 800°C is about -95°C, and the dew point at the intersection d where the equilibrium temperature of 1250°C is about -60°C. This dew point is the lower limit dew point at which SiO2 contained in the
加熱帶12的退火溫度為從800℃到1250℃的情況(例如,金屬帶3為不銹鋼材的情況),控制部20控制露點調整部24、27,以使氣體環境的露點保持在圖2中交點a、b、d及c所圍的區域內。藉此,金屬帶3可具有輝度,且可防止因包含於隔熱材17之SiO2
的還原所造成的隔熱材17的劣化。When the annealing temperature of the
[第2實施型態]
一面參照圖5,一面說明第2實施型態之熱處理裝置1。圖5是第2實施型態之熱處理裝置1的示意斷面圖。[Second implementation type]
The
如圖5所示,第2實施型態中之輝面退火爐(熱處理裝置)1具備有爐體10、氣體供給部9、露點測量部22、及露點調整部24、27a、28a。和圖1所示之第1實施型態中之輝面退火爐(熱處理裝置)1相比較,第2實施型態中之輝面退火爐(熱處理裝置)1例如省略了電腦等之控制部20。因此,進行輝面退火爐(熱處理裝置)1的操作的操作者替代了控制部20。As shown in FIG. 5 , the glow surface annealing furnace (heat treatment apparatus) 1 in the second embodiment includes a
操作者可基於以露點測量部22所測量出之露點,以手動控制第2調節閥(露點調整部)28a及第1調節閥(露點調整部)27a之至少一者。亦即,操作者可透過顯示器等藉由目視取得露點測量部22所測量出的露點。又,操作者基於所測量出的露點,以手動控制第2調節閥(露點調整部)28a,藉此可控制從氣體供給裝置9所供給的還原性氣體的供給量。又,操作者基於所測量出的露點控制第1調節閥(露點調整部)27a,藉此可控制利用露點調整裝置24之環境氣體的循環量。The operator can manually control at least one of the second regulating valve (dew point adjusting unit) 28a and the first regulating valve (dew point adjusting unit) 27a based on the dew point measured by the dew
又,藉由操作者控制成露點調整裝置24中之除濕裝置25作動,而除去氣體環境中所含的水分,氣體環境的露點亦即水分量便降低。又,藉由操作者控制成露點調整裝置24中之加濕裝置26作動,利用氣體環境中所含的水分增加,氣體環境的露點亦即水分量便上升。Furthermore, the operator controls the
藉此,藉由在加熱帶12的氣體環境的露點(亦即水分量)被保持在上限露點及下限露點之間,在還原氣體環境中的水分量對維持金屬帶3的輝度及防止包含於隔熱材17之SiO2
還原便變得適當。其結果,金屬帶3可具有輝度且可防止因包含於隔熱材17之SiO2
的還原所產生之隔熱材17的劣化。Thereby, by maintaining the dew point (that is, the moisture content) in the gas environment of the
(第2實施型態之其他態樣)
如圖6所示,除了控制部20之外更省略了露點調整裝置24(除濕裝置25及加濕裝置26),也可將氣體供給裝置9及第2調節閥(露點調整部)28a作為露點調整裝置24a。藉此,可簡易地構成露點調整裝置24a。操作者可基於露點測量部22所測量出的氣體環境的露點,來控制露點調整裝置24a。亦即,操作者可透過顯示器(monitor)等藉由目視取得露點測量部22所測量出的露點。又,操作者基於所測量出的露點,以手動控制第2調節閥(露點調整部)28a,藉此可控制藉由氣體供給裝置9所供給的還原性氣體的流量。(Other aspects of the second implementation type)
As shown in FIG. 6 , in addition to the
藉此,藉由在加熱帶12之氣體環境的露點(亦即水分量)被保持在上限露點及下限露點之間,在還原氣體環境中之水分量對金屬帶3之輝度維持及防止包含於隔熱材17之SiO2
還原便變得適當。其結果,金屬帶3可具有輝度且可防止因包含於隔熱材17之SiO2
的還原所產生的隔熱材17的劣化。Thus, by maintaining the dew point (i.e., the moisture content) of the gas environment of the
而且,第2實施型態中之利用手動的控制不需要操作者經常地連續進行,操作者有時或定期地進行露點的監視,也包含若無異常時,操作者不特別進行控制的情況。Furthermore, the manual control in the second embodiment does not require the operator to perform it continuously all the time. The operator monitors the dew point occasionally or regularly, and also includes the case where the operator does not perform special control if there is no abnormality.
雖就本發明的具體實施型態及數值進行說明,然而本發明並不限於上述實施型態及數值,在本發明之範圍內可進行各種變更並實施。Although specific embodiments and numerical values of the present invention are described, the present invention is not limited to the above-mentioned embodiments and numerical values, and various modifications and implementations can be made within the scope of the present invention.
操作者替代控制部20,可基於露點測量部22所測量出的露點的取得、及露點測量部22所測量出的露點進行露點調整部27a、28a的控制之至少一者,以使露點被保持在上限露點與下限露點之間。The operator, instead of the
輝面退火爐(熱處理裝置)1也可作成爐體10朝縱向(垂直方向)延伸的縱型爐。The glow surface annealing furnace (heat treatment device) 1 may also be a vertical furnace in which the
輝面退火爐(熱處理裝置)1中,也可於加熱帶12的搬送方向上游側設置入口密封帶,並將入口密封輥13配設於入口密封帶。也可於冷卻帶14的搬送方向下游側設置出口密封帶,並將出口密封輥15配設於出口密封帶。加熱帶12也可是以入口密封帶、預熱帶及均熱帶(皆未圖示)等構成。冷卻帶14也可是以出口密封帶、急冷帶及緩冷帶(皆未圖示)等構成。In the bright surface annealing furnace (heat treatment device) 1, an inlet sealing belt may be provided on the upstream side of the conveying direction of the
在圖1所示之輝面退火爐1中,雖具備有除濕裝置25及加濕裝置26雙方,然而也可以是作成具備有除濕裝置25及加濕裝置26之任一者的構成。The glow
圖3中,顯示不鏽鋼材中之Cr成分氧化後之Cr2
O3
(三氧化二鉻)的氧化-還原的平衡曲線C。在上述實施型態中,雖將上限露點作為-30℃來進行說明,然而也考慮藉由控制成氣體環境的露點不超過Cr2
O3
的氧化-還原的平衡曲線C,而可防止不銹鋼材之氧化。因此,不鏽鋼材的情況,控制部20也可控制露點調整部24、24a,以使氣體環境的露點保持在圖3中之交點e、f、d及c所圍的區域內。FIG3 shows the oxidation-reduction equilibrium curve C of Cr 2 O 3 (chromium trioxide) after the Cr component in the stainless steel is oxidized. In the above embodiment, although the upper limit dew point is described as -30°C, it is also considered that the oxidation of the stainless steel can be prevented by controlling the dew point of the gas environment so that it does not exceed the oxidation-reduction equilibrium curve C of Cr 2 O 3. Therefore, in the case of stainless steel, the
在還原氣體環境中要被輝面退火之金屬帶3在上述之不鏽鋼材以外,也可適用如鎳或鈦或銅的純金屬、低膨脹合金、磁性合金、耐熱合金或是耐蝕合金等各種金屬材料。The
歸納本發明及實施型態,成如下所載。The present invention and its embodiments are summarized as follows.
本發明之一態樣的熱處理裝置1的特徵在於具備有:加熱帶12,用以加熱金屬帶3;隔熱材17,使用作為前述加熱帶12的爐內壁,為包含SiO2
的陶瓷纖維製;及氣體供給部9、28、28a,對前述加熱帶12供給還原性氣體,以露點被保持在可使前述金屬帶3具有輝度的上限露點、與不可使包含於前述隔熱材17的前述SiO2
還原的下限露點之間的方式,在還原氣體環境中將前述金屬帶3進行輝面退火。A
依據上述構成,藉由在加熱帶12的氣體環境的露點(亦即水分量)被保持在上限露點及下限露點之間,而使在還原氣體環境中的水分量對維持金屬帶3的輝度及防止包含於隔熱材17之SiO2
還原變得適當。其結果,金屬帶3可具有輝度,且可防止包含於隔熱材17之SiO2
還原所產生之隔熱材17的劣化。According to the above configuration, the dew point (i.e., the moisture content) of the gas environment of the
本發明之一態樣的熱處理裝置1是一種用以在還原氣體環境中將金屬帶3進行輝面退火的熱處理裝置1,其特徵在於前述熱處理裝置1具備有:爐體10,具有用以加熱前述金屬帶3的加熱帶12、與相對於前述加熱帶12設於前述金屬帶3的搬送方向下游側的冷卻帶14;隔熱材17,使用作為前述加熱帶12的爐內壁,為包含SiO2
的陶瓷纖維製;氣體供給部9、28、28a,對前述爐體10內供給還原性氣體;露點測量部22,測量前述加熱帶12中之氣體環境的露點;露點調整部24、24a、27、27a、28、28a,調整前述露點,基於前述露點測量部22所測量出的前述露點,以前述露點被保持在可使前述金屬帶3具有輝度的上限露點、與不可使包含於前述隔熱材17之前述SiO2
還原的下限露點之間的方式,控制前述露點調整部24、24a、27、27a、28、28a。The
依據上述構成,藉由使在加熱帶12之氣體環境的露點(亦即水分量)被保持在上限露點及下限露點之間,在還原氣體環境中的水分量對維持金屬帶3之輝度及防止包含於隔熱材17之SiO2
還原便變得適切。結果,金屬帶3可具有輝度,且可防止包含於隔熱材17之SiO2
還原所產生之隔熱材17的劣化。According to the above structure, by maintaining the dew point (that is, the moisture content) of the gas environment in the
又,在一實施型態的熱處理裝置1中,前述露點調整部24、27、28的控制可藉由控制部20來進行。In addition, in the
依據上述實施型態,輝面退火(熱處理)的自動化成為可能。According to the above embodiment, it is possible to automate the gloss annealing (heat treatment).
又,在一實施型態之熱處理裝置1中,前述上限露點為-30℃。Furthermore, in one embodiment of the
依據上述實施型態,可得到具有輝度之金屬帶3。According to the above embodiment, the
又,在一實施型態之熱處理裝置1中,因應要被輝面退火之前述金屬帶3的輝度的程度,前述上限露點被設定在-30℃到-65℃的範圍。Furthermore, in the
依據上述實施型態,可得到具有所希望之輝度的金屬帶3。According to the above embodiment, the
又,在一實施型態之熱處理裝置1中,前述露點調整部24具備有除濕裝置25及加濕裝置26之至少一者。Moreover, in the
依據上述實施型態,因應藉由氣體供給部9、28、28a所供給之還原性氣體的露點、與作為目標之氣體環境的露點,可適當地調整加熱帶12中之氣體環境的露點。According to the above embodiment, the dew point of the gas environment in the
又,在一實施型態的熱處理裝置1中,前述氣體供給部9、28、28a具備有氣體供給部9、與用以調節藉由前述氣體供給部9所供給之前述還原性氣體的流量的調節閥28、28a,前述氣體供給裝置9及前述調節閥28、28a作為前述露點調整部24、24a發揮功能。Furthermore, in one embodiment of the
依據上述實施型態,可藉由簡單的構成來構成露點調整裝置24、24a。According to the above embodiment, the dew
又,在一實施型態之熱處理裝置1中,前述熱處理裝置1是前述爐體10朝橫向延伸的橫型爐。Furthermore, in one embodiment of the
依據上述實施型態,可簡化搬送金屬帶3之搬送機構,且可抑制熱處理裝置1之高度變高。又,因為可防止陶瓷纖維的崩壞及粉塵的發生,所以既使在頂板的面積變大的橫型爐,也可使用重量輕之陶瓷纖維製的隔熱材17。According to the above embodiment, the conveying mechanism for conveying the
又,在一實施型態之熱處理裝置1中,前述金屬帶3是由包含Cr之不銹鋼材所構成。Furthermore, in the
依據上述實施型態,可抑制金屬帶3中之氧化皮膜的形成,且金屬帶3具有輝度。According to the above embodiment, the formation of an oxide film in the
又,在一實施型態之熱處理裝置1中,前述加熱帶12的溫度範圍是從800℃到1250℃。Moreover, in the
依據上述實施型態,可以適合輝面退火的溫度加熱金屬帶3。According to the above-described embodiment, the
又,在一實施型態之熱處理裝置1中前述還原氣體包含氫氣。Furthermore, in one embodiment of the
依據上述實施型態,可將金屬帶3還原並使其輝面退火。According to the above embodiment, the
1:輝面退火爐(熱處理裝置) 3:金屬帶 5:氣體供給配管 6:露點測量配管 7:入側配管 8:出側配管 9:氣體供給裝置(氣體供給部、露點調整部) 10:爐體 12:加熱帶 13:入口密封輥 14:冷卻帶 15:出口密封輥 16:加熱部 17:隔熱材 20:控制部 22:露點測量部 24:露點調整裝置(露點調整部) 24a:露點調整裝置(露點調整部) 25:除濕裝置 26:加濕裝置 27:第1調節閥(露點調整部) 27a:第1調節閥(露點調整部) 28:第2調節閥(氣體供給部、露點調整部) 28a:第2調節閥(氣體供給部、露點調整部) A:顯示-30℃的露點的直線 C:顯示Cr2 O3 的氧化-還原的平衡曲線 S:顯示SiO2 的氧化-還原的平衡曲線1: Surface annealing furnace (heat treatment device) 3: Metal belt 5: Gas supply pipe 6: Dew point measurement pipe 7: Inlet pipe 8: Outlet pipe 9: Gas supply device (gas supply unit, dew point adjustment unit) 10: Furnace body 12: Heating belt 13: Inlet sealing roller 14: Cooling belt 15: Outlet sealing roller 16: Heating unit 17: Heat insulation material 20: Control unit 22: Dew point measurement unit 24: Dew point adjustment unit (dew point adjustment unit) 24a: Dew point adjustment unit (dew point adjustment unit) 25: Dehumidification device 26: Humidification device 27: First regulating valve (dew point adjustment unit) 27a: First regulating valve (dew point adjustment unit) 28: Second regulating valve (gas supply unit, dew point adjustment unit) 28a: Second regulating valve (gas supply unit, dew point adjustment unit) A: Line showing the dew point of -30°C C: Balance curve showing the oxidation-reduction of Cr 2 O 3 S: Balance curve showing the oxidation-reduction of SiO 2
圖1是第1實施型態之熱處理裝置的示意斷面圖。 圖2是示意的說明溫度與氣體環境之露點的關係的圖示。 圖3是示意的說明溫度與氣體環境之露點的關係的圖示。 圖4是第1實施型態之其他態樣之熱處理裝置的示意斷面圖。 圖5是第2實施型態之熱處理裝置的示意斷面圖。 圖6是第2實施型態之其他態樣之熱處理裝置的示意斷面圖。Fig. 1 is a schematic cross-sectional view of the heat treatment apparatus according to the first embodiment. FIG. 2 is a diagram schematically illustrating the relationship between temperature and dew point of a gas environment. FIG. 3 is a diagram schematically illustrating the relationship between temperature and dew point of a gas environment. 4 is a schematic cross-sectional view of another heat treatment device according to the first embodiment. Fig. 5 is a schematic cross-sectional view of the heat treatment device according to the second embodiment. 6 is a schematic cross-sectional view of another heat treatment device according to the second embodiment.
1:輝面退火爐(熱處理裝置) 1: Surface annealing furnace (heat treatment device)
3:金屬帶 3:Metal belt
5:氣體供給配管 5: Gas supply piping
6:露點測量配管 6: Dew point measurement piping
9:氣體供給裝置(氣體供給部、露點調整部) 9: Gas supply device (gas supply part, dew point adjustment part)
10:爐體 10: Furnace body
12:加熱帶 12: Heating belt
13:入口密封輥 13:Inlet sealing roller
14:冷卻帶 14: Cooling zone
15:出口密封輥 15: Export sealing roller
16:加熱部 16:Heating part
17:隔熱材 17:Insulation material
22:露點測量部 22: Dew point measurement department
24a:露點調整裝置(露點調整部) 24a: Dew point adjustment device (dew point adjustment unit)
28a:第2調節閥(氣體供給部、露點調整部) 28a: Second regulating valve (gas supply part, dew point adjustment part)
Claims (3)
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| JP2019222033 | 2019-12-09 | ||
| JP2019-222033 | 2019-12-09 | ||
| JP2020-193632 | 2020-11-20 | ||
| JP2020193632A JP2021091960A (en) | 2019-12-09 | 2020-11-20 | Heat treatment device |
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| TW202130823A TW202130823A (en) | 2021-08-16 |
| TWI836167B true TWI836167B (en) | 2024-03-21 |
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| JP7318086B1 (en) | 2022-09-22 | 2023-07-31 | 株式会社ノリタケカンパニーリミテド | Continuous heating furnace |
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- 2020-11-20 JP JP2020193632A patent/JP2021091960A/en active Pending
- 2020-11-27 WO PCT/JP2020/044346 patent/WO2021117516A1/en not_active Ceased
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| JPH1088246A (en) * | 1996-09-10 | 1998-04-07 | Nippon Steel Corp | Continuous bright annealing furnace for strip metal |
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| CN104093864A (en) * | 2012-02-17 | 2014-10-08 | 三菱重工业株式会社 | Heat treatment method |
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| WO2021117516A1 (en) | 2021-06-17 |
| CN114761585B (en) | 2024-10-01 |
| TW202130823A (en) | 2021-08-16 |
| CN114761585A (en) | 2022-07-15 |
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