TWI818684B - System to provide texture to surface of component for use in semiconductor processing chamber and method thereof - Google Patents

Abstract

A system to provide a texture to a surface of a component for use in a semiconductor processing chamber is provided. The system includes an enclosure comprising a processing region, a support disposed in the processing region, a photon light source to generate a stream of photons, an optical module operably coupled to the photon light source, and a lens. The optical module includes a beam modulator to create a beam of photons from the stream of photons generated from the photon light source, and a beam scanner to scan the beam of photons across the surface of the component. The lens is used to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength in a range between about 345 nm and about 1100 nm across the surface of the component to form a plurality of features on the component.

Description

Systems and methods for providing texture to surfaces of components used in semiconductor processing chambers

Embodiments of the present disclosure generally relate to methods, systems, and apparatus for texturing surfaces of components for use in semiconductor processing chambers.

As integrated circuit devices continue to be manufactured at reduced sizes, the fabrication of these devices becomes more susceptible to yield degradation due to contamination. Therefore, the manufacture of integrated circuit devices, particularly those with smaller physical dimensions, requires a greater degree of contamination control than previously thought necessary.

Contamination of integrated circuit devices can result from sources such as undesirable stray particles striking the substrate during film deposition, etching, or other semiconductor manufacturing processes. Generally speaking, the fabrication of integrated circuit devices includes the use of chambers, including, but not limited to, physical vapor deposition (PVD) sputtering chambers, chemical vapor deposition (CVD) chambers, and plasma etching chambers. During deposition and etching processes, material typically condenses from the gas phase onto various interior surfaces of the chamber, as well as on the surfaces of chamber components disposed within the chamber. As the material condenses from the gas phase, the material forms solid masses that reside on the surfaces of the chamber and components. This condensed foreign material accumulates on the surface and tends to detach or peel from the surface during or between wafer processing sequences. Such detached foreign matter may impact and contaminate the wafer and devices formed on the wafer. Contaminated devices often must be discarded, reducing the manufacturing yield of the process.

In order to prevent the separation of foreign matter that has formed, the inner surface of the chamber and the surface of the chamber components disposed within the chamber may have a specific surface texture. The surface texture is configured such that foreign matter that forms on these surfaces has enhanced adhesion to the surface and is less likely to detach and contaminate the wafer. The key parameter for surface texture is surface roughness.

One common texturing method is bead blasting. In bead blasting, solid blasting beads are pushed against the surface to be textured. One approach may be to push solid blast beads through pressurized gas against the surface to be textured. Solid blasting beads are made from suitable materials such as alumina, glass, silica or hard plastic. Sandblasting beads can be of different sizes and shapes depending on the desired surface roughness.

However, it can be difficult to control the uniformity and repeatability of bead blasting. Additionally, during bead blasting, the surface to be textured may become sharp and jagged, causing the tips of the surface to break off due to the impact of the solid blast beads, thereby introducing a source of contamination. Additionally, during bead blasting, blast beads may become trapped or embedded within the surface. For example, if the surface being textured includes small through-holes with varying widths (such as a gas distribution sprinkler head), sandblasting beads may become trapped within the through-holes. In this case, the sandblast beads not only prevent the vias from functioning as gas channels, for example, but also introduce a potential source of contamination to the wafer.

Electromagnetic beams can also be used to texture chamber surfaces. Texturing the chamber surface using an electromagnetic beam can overcome some of the above-mentioned problems associated with bead blasting. However, electromagnetic beams must be operated under vacuum to prevent scattering. Scattering can occur when electrons within an electromagnetic beam interact with air or other gas molecules. Therefore, the electromagnetic beam must be operated within a vacuum chamber. The need for a vacuum chamber limits the size of the parts that can be textured because the parts must be able to fit within the vacuum chamber. Furthermore, the capital costs associated with operating the electromagnetic beam are significantly higher than those associated with bead blasting. For example, the need for a vacuum chamber increases the costs associated with texturing surfaces with electromagnetic beams.

Therefore, there is a need for an improved texturing method that overcomes the problems associated with bead blasting while avoiding the capital costs and size limitations associated with the use of electromagnetic beams.

One embodiment of the present disclosure relates to a method for texturing the surface of a component for use in a semiconductor processing chamber. The method includes: directing a photon beam through ambient air or nitrogen to a component surface; and scanning the photon beam across a first region of the component surface to form a plurality of features on the surface in the first region, wherein the formed features are depressions, protrusions or combination thereof.

Another embodiment of the present disclosure relates to a method for texturing the surface of a component for use in a semiconductor processing chamber. The method includes directing a photon beam to a surface of the component in an atmosphere at a pressure approximately equal to atmospheric pressure; and scanning the photon beam across a first region of the component surface to form a plurality of features on the surface within the first region, wherein The features formed are depressions, protrusions, or a combination thereof.

Another specific embodiment of the present disclosure is a component for a semiconductor processing chamber. The component includes a plurality of features on the surface within the first region, wherein the formed features are depressions, protrusions, or a combination thereof. These features are created by scanning a photon beam across the part's surface.

Another embodiment of the present disclosure is a system for providing texture to the surface of a component for use in a semiconductor processing chamber. The system includes: a housing including a processing area; a support including a support surface disposed in the processing area; a photon light source for generating a photon light source; and an optical module operably coupled to the photon light source to receive the photon flow from the photon light source. groups; and lenses. The optical module includes a beam modulator for generating a photon beam from a stream of photons generated by a photon light source, and a beam scanner for scanning the photon beam across the component surface. The lens is used to receive the photon beam from the beam scanner and distribute the photon beam across the surface of the component at wavelengths ranging from about 345 nm to about 1100 nm to form a plurality of features on the component.

Another embodiment of the present disclosure is a method of providing texture to a surface of a component for use in a semiconductor processing chamber. The method includes: generating a stream of photons; shaping the stream of photons into a beam; scanning the beam of photons through a processing region toward a surface of the component, the processing region containing a gas concentration of ambient air or nitrogen, and the pressure of the ambient air or nitrogen being approximately equal to atmospheric pressure; and The photon beam is distributed across the surface of the component to create features on the surface.

Yet another embodiment of the present disclosure is a system for providing texture to the surface of a component for use in a semiconductor processing chamber. The system includes: a housing containing a processing area maintained as a Class 1 environment with a pressure approximately equal to atmospheric pressure; a support containing a support surface disposed in the processing area; photons for generating a stream of photons a light source; an optical module operably coupled to the photon light source to receive a stream of photons from the photon light source; and a lens. The optical module includes a beam modulator for generating a photon beam from a stream of photons generated by a photon light source, and a beam scanner for scanning the photon beam across the component surface. A lens is disposed in the processing area for receiving the photon beam from the beam scanner and distributing the photon beam across the surface of the component at wavelengths ranging from about 345 nm to about 1100 nm to form a plurality of features on the component.

Embodiments described herein utilize a photon beam generated by a laser to texture the surface of a component used in a semiconductor processing chamber. The photon beam is directed at the surface of the part and sweeps across the surface area to create features. Features formed on a surface, including depressions, protrusions, and/or combinations thereof. The photon beam can be reduced in intensity, defocused and/or scanned at a specific travel speed to create the desired surface morphology.

FIG. 1 depicts a schematic diagram of a laser machine 100 that may be used to texture a surface 103 of a component 104 with a support system 102 . Component 104 may be, for example, a gas distribution showerhead, a chamber wall, or an electrostatic chuck. The laser machine 100 includes a power supply 106, a controller 108 and a laser device 116. Laser device 116 outputs photon beam 112 . Controller 108 may include modulators and/or scanners to modulate and scan photon beam 112 . The laser may also include a pulse supply unit to pulse the photon beam 112 . Pulsed photon beam 112 may help minimize heat applied to surface 103 of component 104 . Additionally, the pulsed photon beam 112 can help reduce problems caused by reflections from the surface 103 of the component 104 . Specific embodiments disclosed herein may be used to texture surface 103 of component 104 to have an arithmetic mean (Ra) roughness profile of about 60 μin to about 360 μin.

Component 104 may include materials such as metals or metal alloys, ceramic materials, polymeric materials, composite materials, or combinations thereof. In one embodiment, component 104 includes a material selected from the group consisting of: steel, stainless steel, tantalum, tungsten, titanium, copper, aluminum, nickel, gold, silver, aluminum oxide, aluminum nitride, silicon, nitrogen Silicon, silicon oxide, silicon carbide, sapphire (Al ₂ O ₃ ), silicon nitride, yttria (yttria), yttrium oxide (yttrium oxide) and combinations thereof. In one embodiment, component 104 includes a metal alloy such as austenitic stainless steel, iron-nickel-chromium alloy (eg, Inconel ^™ alloy), nickel-chromium-molybdenum-tungsten alloy (eg, Hastelloy ^™ ), copper-zinc alloy, chromium Copper alloys (e.g. 5% or 10% Cr, balance Cu) etc. In another embodiment, the component includes quartz. Component 104 may also include polymers such as polyimide (Vespel ^™ ), polyetheretherketone (PEEK), polyarylate (Ardel ^™ ), and the like. In yet another embodiment, component 104 may include components such as gold, silver, aluminum silicon, germanium, silicon germanium, boron nitride, aluminum oxide, aluminum nitride, silicon, silicon nitride, silicon oxide, silicon carbide, yttrium oxide, Yttrium oxide, non-polymers and combinations thereof.

Support system 102 may be located downstream of laser 100 . Support system 102 includes supports 122 , such as substrate supports similar to one or more embodiments, for supporting components 104 . The support system 102 and the laser 100 are positioned relative to each other such that the photon beam 112 output by the laser device 116 is directed toward the surface 103 of the component 104 . In one embodiment of the present disclosure shown in FIG. 1 , laser 100 may also include an actuation member 124 for adjusting the position of the output of laser device 116 . In such embodiments, the support 122 may remain stationary and the actuating member 124 may adjust the output position of the laser device 116 such that the photon beam 112 output by the laser device 116 is scanned across the surface 103 . In an alternative embodiment of the present disclosure shown in FIG. 2 , the support system 102 may include an actuation member 124 for moving the stand 122 . In such embodiments, the output of laser device 116 may remain stationary and actuating member 124 may adjust the position of support 122 such that photon beam 112 output by laser device 116 scans across surface 103 . The actuation member 124 for adjusting the position of the laser device 116 or the support 122 may include, for example, an X-Y stage, an extension arm, and/or a rotation axis capable of translational and/or rotational motion.

The controller 108 may be coupled to the laser device 116 and enable the controller to control various parameters associated with the photon beam 112 output by the laser device 116 . Specifically, the controller 108 may be coupled to the laser device 116 to control at least the following parameters associated with the photon beam 112: wavelength, pulse width, repetition rate, travel speed, power level, and beam size. By being able to control these various parameters associated with the photon beam 112, the controller 108 is able to control the surface morphology formed on the surface 103 of the component 104. It should be understood that "speed of travel" includes embodiments in which the photon beam 112 is moving and the component 104 is stationary, as well as embodiments in which the photon beam 112 is stationary and the component is moving. As shown in FIG. 2 , the controller 108 may also be connected to the support system 102 such that the controller can control the actuation member 124 connected to the support 122 . Alternatively, an auxiliary controller may be connected to the support system 102 to control the actuation member 124 connected to the mount 122 .

Controller 108 may be one of any form of general purpose computer processor (CPU) that may be used in an industrial environment. The computer may use any suitable memory, such as random access memory, read-only memory, floppy disk, hard disk, or any other form of local or remote digital storage. Various support circuits may be coupled to the CPU to support the processor in a conventional manner. The required software programs can be stored in memory or executed by a second CPU located remotely. The software program, when executed, converts the general-purpose computer into a program-specific computer that controls the operations required to perform chamber processing. Alternatively, embodiments described herein may be implemented in hardware, as application specific integrated circuits or other types of hardware embodiments, or a combination of software or hardware.

The laser device 116 of the laser machine 100 may have a power output of about 3W to about 30W. Alternatively, the laser may have a power output of about 1W to about 150W. Laser device 116 is also capable of pulsing and changing parameters associated with photon beam 112 (such as wavelength, pulse width, pulse frequency, repetition rate, travel speed, power level, and beam size), which are discussed in more detail below. The laser device 116 of the laser machine 100 may be a commercially available laser. An example of a commercially available laser that would fit within the scope of this disclosure is Spectral Physics Quanta-Ray Laser's IPG YLPP laser.

Laser 100 and support system 102 do not require a vacuum environment to perform the texturing process because the output of laser device 116 is photon beam 112. Therefore, the output of the laser device 116 differs from conventional electromagnetic beam generation systems in which electron beams are used to perform the texturing process. Electromagnetic beam systems often require a vacuum environment (such as a vacuum chamber) due to the interaction and scattering of electrons with ambient gas atoms, so a vacuum environment is necessary to maintain precise control of the electron beam. As mentioned above, the requirements of a vacuum environment impose physical limitations on the size of parts that can be textured using electromagnetic beam systems, since the parts must be able to be assembled within the vacuum chamber. Furthermore, the requirements of a vacuum environment increase the complexity of the electromagnetic system because the vacuum chamber must include special equipment (e.g., pumps, sensors, seals). Therefore, the capital cost of the electromagnetic beam system is significantly higher than that incurred when texturing using the laser 100 and support system 102 discussed in this disclosure.

Accordingly, laser 100 and support system 102 may be used in ambient air environments where the air through which photon beam 112 passes is approximately 78% nitrogen and approximately 21% oxygen. However, in some cases, it may be desirable to position the laser 100 and support system 102 in an oxygen-depleted environment. In this case, the laser 100 and support system 102 may be positioned within a chamber using nitrogen gas instead of ambient air. Because a vacuum is not required, the pressure within the chamber can be maintained at atmospheric pressure. It should be understood that the "atmospheric pressure" can be different at different locations. In some embodiments, the pressure in the area where component 104 is located may be unregulated during processing.

FIG. 4 depicts a process sequence 200 for a method of operating laser machine 100 and support system 102 , beginning at 201 and ending at 209 . At block 202 , component 104 is positioned on support 122 . At block 204, a first region 126 is defined on the surface 103 of the component 104. As shown in Figure 3, in which component 104 is a gas distribution showerhead 133 having a plurality of through holes 135, first region 126 has a first outer boundary 127 defining an outer boundary of the first region. The first outer boundary 127 defines a first surface area. The ratio of the first surface area to the second surface area of component 104 may be at least 0.6. The second surface area of component 104 is defined by the second outer boundary 132 of textured surface 103 . Therefore, the first surface area located within the second surface area may be at least 60% of the second surface area. It should be understood that the size of the first and second surface areas will vary depending on the shape and size of the component 104 being textured. Alternatively, the ratio of the first surface area to the second surface area may be greater than 0.7, 0.8, and/or 0.9.

At block 206 , laser 100 is powered via power supply 106 such that laser device 116 outputs photon beam 112 . As discussed above, the controller 108 of the laser 100 can change the parameters associated with the photon beam 112 based on the desired texture on the surface 103 . In one embodiment, photon beam 112 may have a wavelength between approximately 345 nm and approximately 1100 nm. In another embodiment, the photon beam may have a wavelength in the ultraviolet range (about 170 nm to about 400 nm). In yet another embodiment, the photon beam may have a wavelength in the infrared range (about 700 nm to about 1.1 mm). The photon beam 112 output by the laser device 116 is directed toward the surface 103 of the component 104 at a location within the first region 126 . Photon beam 112 may have a beam diameter in the range of about 7 μm to about 75 μm at surface 103 of component 104 . Alternatively, the photon beam 112 may have a beam diameter in the range of about 2.5 μm to about 100 μm at the surface 103 of the component 104 . In one embodiment, the photon beam 112 travels a working distance of about 50 millimeters to about 1,000 millimeters. In another embodiment, the photon beam 112 travels a working distance of between about 200 millimeters and about 350 millimeters. Since laser device 116 of laser machine 100 may have a power output in the range of about 1 W to about 150 W, photon beam 112 may have pulses in the range of about 10×10 ⁻⁶ J to about 400×10 ⁻⁶ J power. Photon beam 112 may have a pulse width in the range between approximately 10 ps and approximately 30 ns. Additionally, in one embodiment, the photon beam 112 may have a pulse repetition rate in the range between about 10 KHz to about 200 KHz, and more specifically, in another embodiment, between about 10 KHz to about 3 MHz. within the range between. The controller 108 may be used to control the pulse width and/or pulse repetition rate of the laser device 116 .

At block 208, photon beam 112 is scanned across first region 126 of surface 103, forming a plurality of features on the surface. The photon beam 112 may sweep across the first region 126 of the surface 103 at a traveling speed of about 0.1 m/s to about 30 m/s, such as when the photon beam 112 is pulsed from the laser device 116 . As can be seen in Figures 5-10, features formed as a result of the photon beam 112 being swept across the first region 126 of the surface 103 include depressions, protrusions, or combinations thereof. Controller 108 may be programmed to change certain parameters associated with photon beam 112 as the beam is scanned across first region 126 . For example, controller 108 may pulse photon beam 112 while scanning the beam across first region 126 . In one embodiment, the controller 108 may control the laser device 116 to have a pulse width in the range of about 0.2 ns to about 100 ns. In one specific embodiment, the controller 108 may control the laser device 116 to have a pulse width in the range of about 400 fs to about 200 ns.

In this manner, the laser 100 can be used to form the overall surface topography of the first area.

Depending on the situation, the laser 100 may be used to form three different types of surface morphologies of the first region 126 . The first surface morphology is a repeating random pattern, as shown in Figures 5 and 6, where the repeating random pattern creates a combination of protrusions and depressions. It will be appreciated that the plurality of protrusions may have, for example, flat surfaces and raised surfaces. In Figures 5 and 6, the maximum change in height from the lowest depression to the highest protrusion is in the range of about 4,000 nm to about 4,500 nm. Because the surface morphology is a repeating, random pattern, the bumps and depressions do not form periodic waves.

Repeating patterns can be achieved by synchronizing the pulse frequency and scan rate. As the pulsed laser and substrate move relative to each other, the laser emits radiation that strikes the substrate surface at repeating intervals, creating a repeating pattern. The exact shape of the repeating pattern can be tuned by adjusting the temporal distribution of the laser pulses to the scan rate. If a laser pulse with a very fast power ramp time compared to the scan rate is used, the repetitive pattern will tend to have a substantially rectangular profile because the substrate will not translate very far during the ramp up or down. If the ramp time is very small compared to the pulse duration, the repeating pattern will also tend to have a substantially rectangular profile, since the time distribution of the laser pulse is substantially flat. If the scan rate is low compared to the pulse duration or ramp time, the repeating pattern will also tend to have a substantially rectangular profile because the photons delivered by each laser pulse are concentrated in a smaller area of the substrate. Increasing the ramp time and/or scan rate relative to the pulse duration will result in the resulting features having rounder or more tapered corners. The laser pulse itself can also be modulated by coupling the waveform generator to the laser power supply. In this way, pulses with more tapered slopes or even sinusoidal time profiles can be generated. These measures will produce features that tend to have a wavy shape. Feature spacing is determined by the relationship between pulse frequency and scan rate. Therefore, the feature spacing can be adjusted independently by adjusting the pulse frequency, which will be limited at the high end by the pulse duration.

When the power output of the laser 100 is 30 W, the component 104 is aluminum, and the beam diameter is about 7 μm, the example of a repeating random pattern of Ra shown in Figures 5 and 6 is about 60 μin. It should be understood that the Ra value will vary depending on the power output of the laser 100 and various variables associated with the photon beam 112 . Repeated random patterns of surface morphology and Ra values achieved using laser machine 100 may be similar to those achievable using bead blasting, except that some bead blasting will be avoided using laser machine 100 Deal with inherent problems. For example, if component 104 was a gas distribution showerhead 133 (shown schematically in FIG. 3 ), there would be a plurality of tapered through holes 135 . As mentioned above, bead blasting involves spraying a plurality of beads at high speed onto the surface to be textured. Therefore, there is an inherent lack of control and precision associated with bead blasting.

Beads used in bead blasting may also be trapped or embedded within vias 135 . Additionally, beads may strike corners or edges of vias 135 , undesirably altering the profile of the vias rather than texturing surface 103 . Using laser machine 100 to texture gas distribution sprinkler head 133 with a repeating random-shaped surface topography will not significantly change the boundary profile of through holes 135 in sprinkler head 133 because greater accuracy can be achieved through this texturing process. . The laser 100 can texture the surface 103 within the first region 126 such that a repeating random pattern repeats continuously within the first outer boundary 127 .

The second surface morphology is a repeating waveform, as shown in Figures 7 and 8, where the repeating waveform creates a combination of protrusions and depressions. It will be appreciated that the plurality of protrusions may have, for example, generally convex surfaces. In Figures 7 and 8, the maximum change in height from the lowest depression to the highest protrusion is in the range of about 4,000 nm to about 4,500 nm. Because the surface morphology is a repeating wave, the protrusions and depressions form a periodic profile, with each of the plurality of protrusions arriving at a generally convex tip portion. The periodic profile associated with the repeating waveform repeats throughout the first region 126 of the surface 103 along the x-axis of the surface and the y-axis of the surface.

When the power output of the laser 100 is 30 W, the component 104 is aluminum, and the beam diameter is about 7 microns, an example of the arithmetic mean (Ra) of the roughness profile of the repeating waveform shown in Figures 7 and 8 is about 108 μin. . It should be understood that the Ra value will vary depending on the power output of the laser 100 and various variables associated with the photon beam 112 . Rather than repeating a random pattern, the repeating waveform differs from the surface morphology typically achieved using bead blasting. The laser 100 may texture the surface 103 within the first region 126 such that the repeating waveform continuously repeats within the first outer boundary 127 .

A third surface morphology is a repeating square shape, as shown in Figures 9 and 10, where the repeating square shape creates a combination of protrusions and depressions. It will be appreciated that the plurality of protrusions may have, for example, generally flat surfaces. In Figures 9 and 10, the maximum change in height from the lowest depression to the highest protrusion is in the range of about 4,000 nm to about 4,500 nm. Because the surface morphology is a repeating square, the protrusions and depressions form a periodic profile, with each of the plurality of protrusions reaching a generally flat portion. The periodic profile associated with the repeating square repeats throughout the first region 126 of the surface 103 along the x-axis of the surface and the y-axis of the surface.

When the power output of laser 100 is 30 W, component 104 is aluminum, and the beam diameter is approximately 25 microns, the example arithmetic mean (Ra) of the repeating square roughness profile shown in Figures 9 and 10 is approximately 357 μin. . It should be understood that the Ra value will vary depending on the power output of the laser 100 and various variables associated with the photon beam 112 . Repeating squares may be particularly useful when component 104 is an electrostatic chuck. As best shown in Figure 9, repeating the protrusions and depressions within the square creates a plurality of channels. The plurality of channels allows gases to pass through channels beneath the silicon wafer, which sits on top of an electrostatic chuck during wafer processing, for example.

A subsequent polishing process can be performed after the texturing process to help planarize the top surface of the bumps, thereby aiding in adhesion of the silicon wafer to the electrostatic chuck during wafer processing. Portions of component 104 that are not planarized during polishing will maintain surface roughness, thereby helping to prevent the separation of foreign matter that condenses within the plurality of channels during wafer processing. The laser 100 can texture the surface 103 within the first area 126 such that the repeating square repeats continuously within the first outer boundary 127 .

Another benefit associated with using the laser machine 100 is that the surface 103 of the part 104 being textured does not have to undergo a precise pre-cleaning process prior to block 202 of the process. Instead, all that is required is a rough pre-cleaning process to degrease the surface 103 of the component 104 . This differs from electromagnetic beam systems, where precise pre-cleaning is often required due to the highly reactive nature of the electron beam.

Another benefit associated with using the laser 100 to texture the surface 103 of the part 104 is that after block 202 there are no additional steps to reduce the pressure within the vacuum chamber as compared to using an electromagnetic beam system. As mentioned above, electromagnetic beam systems operate in a vacuum environment, requiring evacuation of ambient pressure. Although the laser 100 and support system 102 may be positioned within the chamber to create an oxygen-depleted environment, the ambient pressure need not be evacuated. Because this evacuation step is eliminated, the time required to texture the surface 103 of the part 104 with the laser 100 is less than the time required to texture the surface of the part using an electron beam. This helps increase throughput associated with texturing part surfaces using laser 100 compared to using electromagnetic beam systems to texturize part surfaces. The throughput associated with laser machine 100 is also greater than that associated with systems using electromagnetic beams because the speed of travel of the electron beam scanning the surface to form a plurality of features is significantly less than the speed of travel of the photon beam 112 scanning the surface. For example, when texturing a surface, the electron beam travels at a speed in the range of about 0.02 M/s to about 0.03 M/s. As mentioned above, when texturing a surface, the photon beam 112 travels at a speed in the range of about 0.1 M/s to about 300 M/s.

Another benefit of texturing the surface 103 of the component 104 using the photon beam 112 output from the laser device 116 is that it can produce a cleaner process than using, for example, bead blasting or electron beam. Depending on the wavelength of the photon beam 112, the material of the surface 103 towards which the photon beam is directed may receive primarily optical radiation or thermal energy to modify the surface. The optical radiation melts the surface 103 of the component 104 at the location where the photon beam is directed, thereby producing molten material or slag that, when resolidified, creates depressions or protrusions. Because the kinetic energy associated with the molten material can be minimized, the molten material is less likely to impact off the remaining surface 103 and redeposit to some other location. This reduces the amount of redeposition that might otherwise occur. In contrast, when electromagnetic beam systems are used, the textured part typically embeds electrons that interact with the electron beam, creating significant energy that causes at least some molten material to be knocked off the remaining surface, thereby increasing the potential for redeposition. Therefore, texturing a surface with a photon beam 112 can produce a cleaner process than texturing a surface with an electron beam.

It should be noted that the photon beam 112 delivered by the laser device 116 to the surface 103 of the component 104 will not cause significant or severe deformation (eg, melting, warping, breaking, etc.) of the component 104 . Significant or severe deformation of a part 104 may generally be defined as a state in which the part 104 cannot be used for its intended purpose due to the application of texturing.

Figures 11 and 12 depict schematic diagrams of a laser 100 that may be used to texture the surface 103 of a component 104. In particular, FIGS. 11 and 12 illustrate various arrangements, parts and components of laser 100 and/or laser device 116 . Laser 100 may have a vertical orientation relative to component 104, as shown in FIG. 11, or laser device 116 may have a horizontal orientation relative to component 104, as shown in FIG. 12. As mentioned above, component 104 is used in a semiconductor processing chamber. Component 104 may be, for example, a gas distribution showerhead, a mask, a chamber liner, a cover ring, a clamp ring, a substrate support base, and/or an electrostatic chuck. Thus, after texturing with laser 100, component 104 serves as a component of a semiconductor processing chamber in which semiconductors, such as wafers, are processed.

As mentioned above, laser device 116 is used to output a photon beam. Laser device 116 in Figures 11 and 12 is shown as including a light source 142, such as a photonic light source, an optical module 144, and a lens 146, each light source operably coupled to one another. However, in other embodiments, although laser device 116 is shown as including light source 142, optical module 144, and lens 146, the present disclosure is not limited thereto. For example, in one or more other embodiments, the power supply 106 and/or the controller 108 shown in FIGS. 1 and 2 may additionally or alternatively include a light source 142, an optical module 144, and/or a lens. 146 without departing from the scope of this disclosure.

In this particular embodiment, light source 142 is used to generate a light source, specifically a stream of photons. Optical module 144 operatively coupled to light source 142 receives the photon flow from light source 142 to shape, direct, or otherwise modulate the photon flow from light source 142 . The optical module 144 includes a beam modulator and a beam scanner located downstream of the beam modulator (relative to the light source 142 ). The beam modulator receives the photon stream from the light source 142 to generate a photon beam from the photon stream. For example, a beam modulator can be used to generate a photon beam with a single focus by shaping the flow of photons from light source 142. The beam scanner is used to receive the photon beam from the beam modulator to scan the photon beam across the surface 103 of the component 104 . Thus, beam scanners are used to move, deflect, and otherwise control the direction of the photon beam, such as through the use of electromechanical actuators.

Lens 146 is used to receive the photon beam from the optical module 144 , and more specifically from the beam scanner, to distribute the photon beam over the surface 103 of the component 104 . While the beam modulator of optical module 144 is used to focus a stream of photons into a beam of photons (such as a single focal photon beam), lens 146 is used to defocus and evenly distribute the photon beam over a predetermined region or area. For example, lens 146 may be used to distribute the photon beam over an ^area of approximately 355 mm. The photon beam distributed over the surface 103 of the component 104 is used to form one or more textured features on the surface 103 of the component 104 , such as depressions and/or protrusions on the surface 103 of the component 104 .

The laser device 116 is used to control the power, speed, frequency, direction, distribution, and/or pulse of the photon beam emitted from the laser device 116 and swept across the surface 103 of the component 104 . For example, the light source 142 and/or the optical module 144 may be used to pulse a photon beam while the photon beam is scanned across the surface 103 of the component 104 . Additionally, the beam scanner of the optical module 144 may be used to direct or scan the photon beam across the surface 103 of the component 104 in one or more predetermined patterns. In one embodiment, a beam scanner may be used to scan the photon beam using a progressive pattern, a sparrow pattern, and/or a random pattern. The sparrow pattern involves scanning the photon beam in an outside-in pattern or an inside-out pattern relative to a middle or central area of the surface 103 of the component 104, thus operating in a radial pattern rather than a row-by-row pattern.

The laser device 116 is also used to distribute and scan the photon beam vertically or horizontally from the lens 146 and towards the surface 103 of the component 104 . Mount 122 is shown including support surface 190 for use with laser 100 with component 104 positioned between lens 146 and mount 122 . The support surface 190 is used to support the component 104 on the support 122 such that the component 104 is positioned on the support surface 190 of the support 122 in the arrangement shown in Figure 11, with the photon beam distributed vertically towards the surface 103 of the component 104. In the arrangement shown in Figure 12, the support surface 190 of the standoff 122 acts as a barrier behind the component 104, with the photon beam distributed horizontally towards the surface 103 of the component 104. One advantage of the horizontal arrangement shown in Figure 12 is that gravity can be used to pull material away from surface 103 of component 104, such as when the material melts. This results in a cleaner process than when the material is able to be redeposited or formed on the surface.

Still referring to FIGS. 11 and 12 , a cleaning housing 150 or cleaning compartment is included for use with the laser 100 . Cleaning housing 150 generally includes a processing area 151 in which stand 122 is disposed. For example, during the texturing process, the component 104 is positioned within the cleaning housing 150, wherein the processing area 151 of the cleaning housing 150 includes a filtration system capable of maintaining the processing area as a Level 1 environment according to the classification parameters of ISO 14644-1 . Additionally, the support 122 and at least a portion of the laser device 116 , such as the lens 146 , are positioned within the cleaning housing 150 . Since the laser machine 100 is used in a non-pressurized (eg, atmospheric) environment, the pressure within the cleaning housing 150 may generally be equal to or close to atmospheric pressure, or the pressure may be uncontrolled. Housing 150 may alternatively and/or additionally be purged with an inert gas (eg, N ₂ ) to remove oxygen, water, and/or other process contaminants. Additionally, a conveyor may be used to introduce the component 104 into the cleaning housing 150 and onto the holder 122 , and/or the conveyor may be used to remove the component 104 from the holder 122 and out of the cleaning housing 150 . For example, in such embodiments, the support 122 may include a conveyor. Alternatively, a separate robotic arm or similar mechanism may be used to facilitate removal of the part 104 from the conveyor and/or placement of the part 104 on the conveyor.

13 illustrates a comparison of what is typically required for parts textured using bead blasting 302 , parts textured using laser processing 304 in accordance with specific embodiments described herein, and parts used in semiconductor processing chambers. View of the average elementality results for Spec 306. The x-axis provides the different elements (such as trace metals) tested in each part, and the y-axis provides the amount of the element found on the surface of the part in atoms/ ^cm . As shown, parts textured using Laser Process 304 will typically have less elemental or trace metal than required by specification 306, and will also typically have less elemental or trace metal than required using Bead Blasting 302 Texture of elements or trace metals fewer elements or trace metals. For example, because the beads used in bead blasting 302 typically include sodium (Na), the amount of sodium in a part textured using laser treatment 304 is significantly reduced compared to bead blasting 302 . Parts textured using laser processing 304 can often result in having higher amounts of magnesium (Mg), but these parts can then be cleaned using dilute acids and high-purity water (such as hot deionized water) to remove excess magnesium. Accordingly, components textured using laser processing 304 yield higher yields during subsequent semiconductor processing (e.g., approximately 95 %).

While the foregoing relates to specific embodiments, other and further embodiments may be contemplated without departing from the scope of the foregoing, and the scope of the foregoing is determined by the scope of the following claims.

100:Laser machine 102:Support system 103:Surface 104:Components 106:Power supply 108:Controller 112:Photon 116:Laser device 122:Bearing 126:First area 127: First outer boundary 132: Second outer boundary 133:Gas distribution sprinkler head 135:Through hole 142:Light source 144:Optical module 146:Lens 150: Clean the shell 151: Processing area 190:Support surface 200: Processing sequence 202-208:Box 302:Bead blasting 304:Laser treatment 306:Specifications

The above-described features of the disclosure may be understood in more detail by reference to a number of embodiments, some of which are illustrated in the accompanying drawings, to which the disclosure briefly summarized above may be described more particularly. It should be noted, however, that the appended drawings illustrate only some exemplary embodiments and therefore should not be considered limiting of scope.

Figure 1 shows a schematic diagram of a laser machine and support system in accordance with the present disclosure.

Figure 2 shows an alternative schematic diagram of a laser and support system in accordance with the present disclosure.

Figure 3 shows a top view of a gas distribution showerhead in accordance with the present disclosure, with areas to be textured marked by boundary lines.

Figure 4 illustrates a process sequence for a method of operating a laser and support system in accordance with the present disclosure.

Figures 5 and 6 illustrate repeating random patterns of surface morphology produced by a laser machine in accordance with the present disclosure. FIG. 5 shows a perspective view showing the surface morphology, and FIG. 6 shows a top view showing the surface morphology.

Figures 7 and 8 illustrate the surface morphology of a repeating waveform produced by a laser in accordance with the present disclosure. FIG. 7 shows a perspective view showing the surface morphology, and FIG. 8 shows a top view and a side view showing the surface morphology.

Figures 9 and 10 illustrate repeating square surface morphologies produced by a laser in accordance with the present disclosure. FIG. 9 shows a perspective view showing the surface morphology, and FIG. 10 shows a top view and a side view showing the surface morphology.

Figure 11 shows a schematic diagram of a laser machine and laser device according to the present disclosure.

Figure 12 shows an alternative schematic diagram of a laser machine and laser device in accordance with the present disclosure.

Figure 13 shows a graph comparing the results of parts textured using bead blasting and methods in accordance with the present disclosure.

To aid understanding, the same component symbols have been used wherever possible to refer to the same components common in the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation.

This patent or application file contains at least one drawing executed in color. Copies of this patent or patent application publication with color drawing(s) will be provided by the Office upon request and payment of the necessary fee.

Domestic storage information (please note in order of storage institution, date and number) without

Overseas storage information (please note in order of storage country, institution, date, and number) without

100:Laser machine

103:Surface

104:Components

116:Laser device

122:Bearing

142:Light source

144:Optical module

146:Lens

150: Clean the shell

151: Processing area

190:Support surface

Claims (9)

A method of providing a texture to a surface of a component for use in a semiconductor processing chamber includes the following steps: Produce a stream of photons; shaping the photon stream into a photon beam; Scanning the photon beam toward the surface of the component through a processing area that contains: a gas concentration of ambient air or nitrogen, and the pressure of the ambient air or nitrogen is approximately equal to atmospheric pressure; and The photon beam is distributed across the surface of the component to form features on the surface. The method of claim 1 further includes the following steps: assembling the semiconductor processing chamber and the component. The method of claim 2 further includes the step of processing a semiconductor in the semiconductor processing chamber. The method of claim 1 further includes the step of arranging the component in an enclosure, the enclosure being maintained as a Class 1 environment. The method of claim 4, wherein the setting step includes the following steps: using a conveyor to transport the component to the Class 1 environment. The method of claim 1, wherein the distributing step includes the step of distributing the photon beam horizontally toward the surface of the component. The method of claim 1, wherein the step of distributing the photon beam includes the step of pulsing the photon beam while scanning the photon beam across the surface of the component. The method of claim 1, wherein the photon beam includes: a wavelength in a range between approximately 345 nm and approximately 1100 nm. The method of claim 1, wherein the plurality of features formed include: depressions, protrusions, or combinations thereof.