TWI813954B - Disposing protective cover film and underfill layer over singulated integrated circuit dice for protection during integrated circuit processing - Google Patents

Abstract

Singulated integrated circuit (IC) dice are provided. The singulated IC dice are positioned on dicing tape to provide open space between sides of adjacent singulated IC dice. An underfill layer and a protective cover film is disposed above the singulated IC dice and the open space between the sides of the adjacent singulated IC dice. The underfill layer and the protective cover film include one or more photodefinable materials. An exposure operation is performed to produce a pattern on the underfill layer and the protective cover film. Based on the pattern, the underfill layer and the protective cover film is removed at areas above the open space between the sides of the adjacent singulated IC dice to create portions of the underfill layer and portions of the protective cover film that are disposed above the singulated IC dice.

Description

A protective cover film and an underfill layer are placed on the diced IC die for protection during IC processing

Embodiments of the present invention relate generally to semiconductor manufacturing, and more specifically, to the use of protective cover films for underfill protection during integrated circuit processing.

Integrated circuit (IC) die stacking may include the process of mounting multiple dies on top of each other, where the stacked dies are ultimately packaged in a single semiconductor package to form a discrete electronic device. The use of stacked IC dies continues to increase in an effort to reduce the area occupied by the entire electrical device and improve the electrical performance of the electrical device.

In one embodiment, a method includes providing diced integrated circuit (IC) dies on a dicing tape of a carrier, wherein the diced IC dies are positioned on the dicing tape to overlap adjacent dicing tapes. An open space is provided between the sides of the cut IC die; an underfill layer and a protective cover film are disposed on the open space between the cut IC die and the adjacent cut IC die, wherein the protective cover film The film is positioned over the underfill layer, wherein the underfill layer and protective cover film include one or more photodefinable materials; an exposure operation is performed to create a pattern on the underfill layer and protective cover film; and based on the pattern, adjacent The underfill layer and the protective cover film are removed from the area above the open space between the sides of the diced IC die to form a portion of the underfill layer and a portion of the protective cover film disposed over the diced IC die. .

In another embodiment, a device includes: a carrier; and diced integrated circuit (IC) dies positioned on the carrier, wherein the diced IC dies are positioned on the carrier to be adjacent to the diced IC dies. providing open space between the sides of the IC die; and an underfill layer located over the diced IC die; and a protective cover film located over the underfill layer, wherein the protective cover film is coupled to the IC die using an adhesive bond Bottom fill layer.

In another embodiment, a method includes: providing a device wafer including integrated circuit (IC) dies; disposing an underfill layer and a protective cover film on the device wafer, wherein the protective cover film is on the underfill layer and coupled to the underfill layer; and dicing the IC die from the device wafer by the processing device to form a diced IC die, wherein the diced IC die includes a bottom disposed above the diced IC die Part of the filling layer and part of the protective covering film.

Die stacking involves making one or more wafers from IC dies. The wafer can be placed on a carrier and diced to form diced IC dies. Sliced IC dies are selected and sorted to find the "good" dies that are functional and to remove the "bad" dies that are not functional. The functional diced IC die may have an underfill layer on top of the surface of the diced IC die. The underfill layer may include dielectric material. When two functional IC dies are stacked to form a stacked device, an underfill layer may be sandwiched between the two stacked dies. The underfill layer can help electrically insulate the two stacked dies, as well as assist in soldering and bonding the stacked IC dies.

In some conventional fabrication systems, wafer-level underfill may be applied to the wafer. When the wafer is diced to form diced IC dies, contaminants generated by the dicing operation can fall onto the underfill layer. Additionally, in some cases, when the diced IC die is picked from the carrier, other contaminants can land on the underfill layer of the diced IC die while still on the carrier. Contaminants on the underfill layer can cause electrical and mechanical defects in the diced IC die and the resulting stacked devices, which may reduce yield.

Aspects of the present invention address these and other deficiencies by disposing an underfill layer and a protective cover film on the device wafer. A protective cover film may be positioned over the underfill layer. The protective cover film can remain on the device wafer during dicing and protect the underlying underfill layer from contamination.

In some embodiments, the underfill layer over the diced IC die may be selectively removed prior to removing the diced IC die from the carrier. One or more of the remaining diced IC dies on the carrier may retain their respective portions of the protective cover film. When the selected diced IC dies are removed from the carrier, a protective cover film on the diced IC dies on the device wafer may assist in removing the diced IC dies on the carrier (and the underfill layer) from contamination.

In some embodiments, the protective cover film may be a material bonded to the top surface of the underfill layer using an adhesive bond. For example, the protective cover film may be a polymer coupled to the underfill layer using an adhesive. The protective cover film may have an adhesive strength that is less than the adhesive strength between the underfill layer and the device wafer, and less than the adhesive strength between the bottom surface of the diced IC die and the dicing tape of the carrier, such that When the protective cover film is removed, the underfill layer remains on the diced IC die, and the diced IC die remains bonded to the carrier.

In illustrative embodiments, the underfill layer may include a non-conductive film (NCF). NCF can include solid materials, such as polymers, that are dispensed as solid flakes. In some cases, both the protective cover film and the NCF are pre-bonded and dispensed as a single sheet. A sheet including both the protective cover film and the NCF may be laminated on top of the wafer using one or more of heat or pressure. When the device wafer is diced, the protective cover film and NCF remain on the device wafer and the resulting diced IC die. With regard to the diced IC die, the protective cover film can be removed (eg, peeled off) from the underlying NCF at any desired time during the fabrication process using a force greater than the adhesive bond between the protective cover film and the NCF.

Other aspects of the present invention address these and other deficiencies by separating the IC dies of the device wafer into diced IC dies. In some embodiments, cleaning operations may be used to remove loose particles associated with separating IC dies from device wafers. The cut IC die is placed on the dicing belt of the carrier. The diced IC dies are positioned on the dicing tape to provide open spaces (eg, etch channels) between the sides of adjacent diced IC dies. An underfill layer and a protective cover film are disposed above the diced IC die and in the open space between the sides of adjacent diced IC dies. One or more of the underfill layer or protective cover film includes a photodefinable material. An exposure operation is performed to create a pattern on the underfill layer and protective cover film. Based on the pattern, the underfill layer and the protective cover film are removed from the area above the open space between the sides of adjacent diced IC dies to form portions of the underfill layer disposed over the diced IC dies. And protect the part covered with film. Because the device wafer is diced and cleaned before the underfill layer is deployed, the underfill layer is exposed to less contaminants. Additionally, cutting (eg, portions) of the protective cover film over portions of the underfill layer may further protect the underfill layer from contaminants generated during IC processing.

In view of other IC processing technologies, advantages of the present invention include, but are not limited to, improved IC die yield and improved stacked device yield. In particular, aspects of the invention reduce contaminants on the underfill layer during the integrated circuit fabrication process, which may result in improved yield.

It should be noted that for purposes of illustration and not limitation, Figures 1-6 and 9-13B below are described as a device ( eg, a device wafer) and a series of operations. It should be noted that in some embodiments, some, all, more, or different operations may be performed. It may be noted that in some embodiments, some operations may be performed in a different order or not at all.

Figure 1 illustrates a device wafer used in a manufacturing process including a first operation for providing the device wafer on a carrier, in accordance with some embodiments of the invention.

Diagram 100 of FIG. 1 shows device wafer 110 oriented above carrier 112 (also referred to herein as a "wafer carrier"). In some embodiments, device wafer 110 may refer to a patterned wafer that has been patterned with circuitry during a fabrication process, such as a semiconductor fabrication process. Device wafer 110 may have a plurality of integrated circuits (ICs) fabricated on device wafer 110 . The integrated circuits and device wafer 110 may be separated (eg, diced) to form a plurality of diced IC dies. In some embodiments, carrier 112 may refer to a platform that supports device wafer 110 . For example, the carrier 112 may be used to aid in handling or transporting the device wafer 110 from one piece of fabrication equipment to another. In another example, carrier 112 may be used to facilitate storage of associated device wafers 110 . In the illustrative example, carrier 112 may include frame 108 (also referred to herein as a "wafer frame ring") and dicing tape 106 . Frame 108 may be formed from a rigid material such as metal or metal alloy. Dicing tape 106 may be a material that holds device wafer 110 and may be used to hold device wafer 110 and the resulting cleaved IC wafer during the dicing operation to separate the cleaved IC die from device wafer 110 . Adhesive on the top side of the dicing tape holds the device wafer 110 (or diced die) in place. Dicing tape 106 can be made from a number of materials, such as polyolefin, polyethylene, or polyvinyl chloride (PVC).

Figure 2 illustrates a device wafer used in a fabrication process that includes a second operation for forming an underfill layer and a protective capping film over the device wafer, in accordance with some embodiments of the invention.

Diagram 200 of FIG. 2 shows an underfill layer 214 (also referred to herein as "wafer-level underfill") and a protective capping film 216 formed over device wafer 110. Underfill layer 214 may refer to an electrically insulating material (eg, a dielectric material) applied to device wafer 110 or diced die. In some embodiments, underfill layer 214 may be an adhesive layer having adhesive strength and bonded to device wafer 110 . In some embodiments, after underfill layer 214 is disposed on device wafer 110 using one or more of heat or pressure, it may be fully or partially cured. In some embodiments, underfill layer 214 may fully or partially encapsulate any electrical contacts (eg, pillars) of the underlying IC die upon which the underfill layer is disposed. In some embodiments, underfill layer 214 may help compensate for thermal expansion mismatches between the first IC die and another IC die (or substrate) to which the first IC die is bonded.

In some embodiments, underfill layer 214 (and protective cover film 216) may be fully or partially transparent, allowing optical detection devices to detect areas between IC dies of device wafer 110 (eg, for dicing) or detecting the electrical connections of IC dies for die-to-die (or substrate) bonding. For example, alignment features may be formed at device wafer 110 . Alignment features may be located in "etch backs," which are areas between IC dies of device wafer 110 . A charge coupled device (CCD) or optical camera may be used to detect the alignment features beneath underfill layer 214 (and protective cover film 216). Device wafer 110 may be diced using the alignment features as guides such that the IC dies of device wafer 110 may be separated without damaging the IC dies.

In some embodiments, underfill layer 214 includes a non-conductive film (NCF). NCF may include electrically insulating materials (eg, dielectrics). NCF may include cleaning agents that promote welding by eliminating oxidation. NCF also prevents solder from reflowing to adjacent electrical contacts and causing electrical damage (e.g., electrical shorts). In some embodiments, and as described above, NCF is a solid material that can be dispensed as sheets of solid material. For example, the NCF sheet can be unrolled from a roll and placed on top of the underlying device wafer 110 . In some embodiments, the NCF and protective cover film 216 may be dispensed as a single sheet of material, as discussed further above and below. The NCF may have one or more characteristics as discussed with respect to underfill layer 214 . In other embodiments, underfill layer 214 may be or include a different material, such as, but not limited to, a thermoset polymer (eg, epoxy), silicon dioxide, or other materials.

In some embodiments, protective cover film 216 may be a layer bonded to the top surface of underfill layer 214 using an adhesive bond. For example, protective cover film 216 may include an adhesive bonded to the top surface of underfill layer 214 . The protective cover film 216 may have an adhesive strength that is less than the adhesive strength between the underfill layer 214 and the device wafer 110 . The adhesive strength of the protective cover film 216 may be less than the adhesive strength between the device wafer 110 (or diced IC die) and the dicing tape 106 of the carrier 112 . The low adhesive strength allows the protective cover film 216 (or a portion of the protective cover film 216) to be removed (eg, pulled) without removing the underlying underfill layer 214 or the diced IC die from the carrier 112. In some embodiments, the protective cover film 216 may also be completely or partially transparent, which allows the optical detection device to detect the areas between the dies of the device wafer 110 . In some embodiments, underfill layer 214 may be "sticky" or have adhesive properties such that protective cover film 216 may adhere to the top surface of underfill layer 214 without the use of additional adhesive material. In some embodiments, protective cover film 216 may be a solid material that is dispensed as a solid sheet. In some embodiments, electrical contacts extending from the IC die of device wafer 110 extend through underfill layer 214 but not through protective capping film 216 . Protective cover film 216 may include a different material than underfill layer 214 . In some embodiments, protective cover film 216 does not include a resist material (eg, a material that cures or hardens in response to exposure to a light source, such as ultraviolet light).

In some embodiments, underfill layer 214 and protective cover film 216 may be applied together using a single operation, such as a lamination operation. In some embodiments, the underfill layer 214 and the protective cover film 216 are pre-bonded to each other (eg, as a single sheet) before being applied to the device wafer 110 . A solid sheet including both underfill layer 214 and protective cover film 216 is placed over device wafer 110 and laminated to device wafer 110 using a lamination operation. The lamination operation applies both heat and pressure, which causes underfill layer 214 to adhere to the top surface of device wafer 110 . For example, a heated platen may be positioned over a sheet of underfill layer 214 and protective cover film 216 . The heated platen applies both heat and pressure to the sheet. In another example, a balloon may be used to apply pressure around device wafer 110, underfill layer 214, and protective cover film 216 by using a vacuum. Heat can be applied in a vacuum to perform the lamination operation.

In some embodiments, various operations may be used to apply underfill layer 214 and protective cover film 216 . For example, underfill layer 214 may be applied to the top surface of device wafer 110 . A protective cover film 216 may be applied to the top surface of the underfill layer. For example, a capillary underfill operation dispenses the underfill material (as a liquid) onto the device wafer 110 . The underfill material is attracted over the device wafer 110 by capillary action. The underfill material may be cured at elevated temperatures before or after the protective cover film 216 is applied. In some embodiments, after applying the underfill material, the protective cover film 216 may be applied as a sheet as described herein. In other embodiments, the protective cover film 216 may be configured as a liquid layer (eg, spin-coated) after dispensing the underfill material.

In another example of using multiple operations to apply underfill layer 214 and protective cover film 216 , underfill layer 214 may be dispensed as a liquid toward the center of device wafer 110 and distributed across device wafer 110 and accelerate the wafer. to achieve a defined radial speed (e.g. spin coating). Underfill layer 214 may be partially cured (eg, b-staged). As described herein, protective cover film 216 may be applied over underfill layer 214 in sheet or liquid form.

3 illustrates a device wafer used in a fabrication process that includes removing underfill over areas of the device wafer between IC dies of the device wafer , in accordance with some embodiments of the invention. The third operation of layer and protective covering film.

Diagram 300 of FIG. 3 shows underfill layer 214 and protective capping film 216 over areas of device wafer 110 located between IC dies of device wafer 110 (eg, over deep trenches of device wafer 110 ). removed. The underfill layer 214 and the protective capping film 216 are removed over the deep trench of the device wafer 110 to form portions 316 of the protective capping film and portions 314 of the underfill layer. It should be noted that after removing the protective cover film 216 and the underfill layer 214 on the deep trench of the device wafer 110, the underfill layer 214 and the protective cover film 216 are effectively cut to form the portion 316 of the protective cover film and the protective cover film 216. Part 316 of the covering film.

In some embodiments, the laser source device 318 may be used to remove the underfill layer 214 and the protective capping film 216 above the deep trench of the device wafer 110 . For example, laser source device 318 may emit light of a selected wavelength (and selected power) that etch protective cover film 216 and underfill layer 214 in desired areas. In some embodiments, laser source device 318 can remove protective capping film 216 and underfill layer 214 in desired areas without dicing the underlying IC die of device wafer 110 . For example, the wavelength and power of the light may be selected such that the laser source device 318 etch the protective capping film 216 and the underfill layer 214 without etching the device wafer 110 . In other embodiments, the protective cover film 216 and the underfill layer 214 may be removed using different techniques, such as physical sawing or chemical material removal.

4 illustrates a device wafer used in a manufacturing process that includes a fourth operation for dicing IC dies from the device wafer to form diced IC dies , in accordance with some embodiments of the invention.

Diagram 400 of FIG. 4 shows dicing device wafer 110 to form diced IC dies 420. In some embodiments, a laser source device, such as laser source device 318 of FIG. 3 , may be used to dice individual IC dies of device wafer 110 . In some embodiments, the same laser source device may be used to separate protective cover film 216, underfill layer 214, and device wafer 110. For example, the laser source device 318 may use light of a first wavelength and a first selective power to etch the protective capping film 216 and the underfill layer 214 , and use light of a second wavelength and a second selective power to cut the device wafer 110 . blocks (e.g., two-pass process). The wavelength and selected power of the light used to dice the device wafer 110 may be smaller or higher than the wavelength and selected power of the light used to etch the protective capping film 216 and the underfill layer 214 , respectively. In another example, different laser source devices may be used, such that the first laser source device is used to etch the protective capping film 216 and the underfill layer 214 , and a different laser source device is used to dice the device wafer 110 .

In some embodiments, for example, device wafer 110 may be diced using different techniques (or combinations thereof), such as physical sawing or chemical material removal or material degradation by exposure. It should be noted that, for purposes of illustration and not limitation, the removal of protective cover film 216 and underfill layer 214 and dicing of device wafer 110 are described as distinct operations. In some embodiments, one or more of protective cover film 216, underfill layer 214, and device wafer 110 may be separated using a single process. For example, the laser source device 318 can be calibrated with a wavelength of light and a selected power to cut through all of the protective cover film 216, underfill layer 214, and device wafer 110 in a single pass.

Figure 5A illustrates a device wafer used in a manufacturing process that includes a fifth operation for removing one or more portions of a protective cover film, in accordance with some embodiments of the invention.

Diagram 500 of FIG. 5A shows removal of all portions 316 of the protective cover film from respective portions 314 of the underfill layer. As described above, the protective cover film 216 can be bonded to the top surface of the underfill layer 214 (eg, after dicing, portions 316 of the protective cover film can be bonded to respective portions 314 of the underfill layer). In some embodiments, a debonding operation may be performed to remove portions of the protective cover film from respective portions of the underfill layer. For example, the protective cover film can be caused by pulling the protective cover film portion 316 away from the respective portions 314 of the underfill layer with a force greater than the adhesion force between the portion 316 of the protective cover film and the portion 314 of the underfill layer. Portion 316 is debonded (eg, delaminated). For example, portions 316 of the protective cover film may be removed in a manner similar to removing adhesive tape from the surface. In some embodiments, all portions 316 of the protective cover film may be removed during the degumming operation, as shown. After all portions of the protective cover film 316 are removed, the diced IC die 420 may be removed from the carrier 112 and used in subsequent operations, such as die stacking as described with respect to FIG. 6 .

Figure 5B illustrates a device wafer used in a manufacturing process including a sixth operation for removing one or more portions of a protective cover film, in accordance with some embodiments of the invention.

Illustration 550 of Figure 5B shows portions of protective cover film 216 being selectively removed. In some embodiments, one or more diced dies on carrier 112 may allow respective portions of the protective cover film to be removed (eg, a selective debonding operation), while other diced ICs on carrier 112 The die did not allow individual portions of the protective covering film to be removed. In some embodiments, one or more of the cut ICs that have had their respective portions of the protective cover film removed may be removed from the carrier 112 while other cut ICs may have their respective portions of the protective cover film 216 removed. The IC die remains bonded to the carrier 112 . These portions of the protective cover film may help protect the respective underlying diced IC dies (and respective portions of the underfill layer) remaining on the carrier 112 from the respective portions of the protective cover film that have been previously removed. The removal of portions of the diced IC die is affected by the removal of diffuse contaminants (eg, loose particles associated with separating the IC die from the device wafer 110 ).

For example, the protective cover film of the first diced IC die of diced IC die 420 may be removed. The underfill layer of the first cut IC die can be retained. The carrier 112 may include an open area where a second diced IC die has been previously removed prior to removal of the protective cover film of the first diced IC die. has been removed. A third diced IC die may also be oriented on carrier 112 . The protective cover film and underfill layer over the third diced IC die remain (eg, when the first or second diced IC die is removed from the carrier 112 ) and protect the third diced IC The die and one of its underfill layers are partially protected from contamination.

It may be noted that in other embodiments, the diced IC die, including respective portions of the underfill layer and portions of the protective cover film, may be removed from the carrier 112 . After removing the diced IC dies from the carrier 112, portions of the protective cover films of the respective diced IC dies may be removed. For example, portions of the protective cover film may be removed after the diced IC die is removed from the carrier 112 but before the diced IC die is stacked on another electronic device.

Figure 6 illustrates a device stack during a manufacturing process that includes a seventh operation of stacking multiple dies on top of each other, in accordance with some embodiments of the invention.

Diagram 600 of FIG. 6 shows a die stacking operation. Device wafer 626 (also referred to herein as a "receiving wafer") can be any type of device wafer. It may be noted that in some embodiments, the diced IC dies may be stacked on a substrate rather than the device wafer 110 . The diced IC die 624B and the respective portions of the underfill layer 624A may be removed from the carrier 112 after removing the respective portions of the protective cover film and placed (adhered) to the die of the device wafer 626 On grain 628. Another diced IC die 622B and respective portions of the underfill layer 622A may also be removed from carrier 112 (or a different carrier with a different type of IC die) and adhered on top of diced IC die 624B. Any number of diced IC dies may be stacked in device stack 630.

In some embodiments, a thermocompression bonding (TCB) operation may be performed to bond the stacked dies to each other. In a TCB operation, heat and pressure are applied to device stack 630 (or at least two stacked dies). The TCB operation allows portions 624A and 622A of the underfill layer to fill any voids and reflow the solder joints to form interconnects between cut IC dies 622B and 624B.

Components of FIGS. 1-6 may be described below to help illustrate the method 700 of FIG. 7 and the method 800 of FIG . 8 respectively . Methods 700 and 800 may be performed as one or more operations. It may be noted that methods 700 or 800 may be performed in any order and may include the same, different, more, or fewer operations. It may be noted that method 700 or 800 may be performed by one or more pieces of semiconductor fabrication equipment or fabrication tools, hereinafter referred to as fabrication equipment.

7 illustrates a flow diagram of a fabrication process for using a protective cover film for underfill protection in accordance with some embodiments of the invention.

At operation 705 of method 700, device wafers are provided by fabrication equipment. A device wafer may include multiple undiced IC dies. In some embodiments, a device wafer may be disposed on a carrier.

At operation 710, the fabrication equipment disposes an underfill layer and a protective cover film on the device wafer. In some embodiments, a protective cover film is overlying and coupled to the underfill layer. In some embodiments, the underfill layer is NCF. In some embodiments, the protective cover film and underfill layer are dispensed as a single solid sheet, with the protective cover film pre-bonded to the underfill layer. The sheet can be oriented to cover the underlying device wafer and laminated to the device wafer. In some embodiments, the underfill layer and protective cover film may be laminated to the device wafer using, for example, a lamination operation.

At operation 715, the fabrication equipment dices the IC die from the device wafer to form diced IC die. In some embodiments, the diced IC die includes portions of the underfill layer and portions of the protective cover film laminated over the diced IC die.

In some embodiments, dicing the IC dies from the device wafer to form diced IC dies includes removing an underfill layer and a protective capping film over areas of the device dies between the IC dies. .

In some embodiments, a separation operation is performed in which the fabrication equipment removes areas of the device wafer between the IC dies before dicing the IC dies from the device wafer to form diced IC dies. The underfill layer and protective cover film on top (eg, two processes).

At operation 720, the fabrication equipment removes one or more portions of the protective cover film from the diced IC die. In some embodiments, removing one or more portions of the protective cover film exposes respective one or more portions of the underfill layer over the diced IC die.

In some embodiments, removing one or more portions of the protective cover film from the diced IC die includes removing portions of the protective cover film using a degumming operation that removes all portions of the protective cover film. .

In some embodiments, removing one or more portions of the protective cover film from the diced IC die includes removing a first portion of the protective cover film over the first diced IC die. The first cut IC die is removed from the carrier. The cut IC dies are oriented on the carrier. After removing the first diced IC die from the carrier, the second portion of the protective cover film over the second diced IC die is removed.

At operation 725, the fabrication equipment removes the diced IC die from the carrier such that respective portions of the protective cover film are removed.

At operation 730, the fabrication equipment stacks the diced die on top of another IC die. In some embodiments, respective portions of the protective cover film of the diced die have been previously removed (eg, operation 725). In some embodiments, the diced dies are stacked on top of a different object such as a substrate (eg, flip chip).

8 illustrates a flow diagram of a fabrication process for using a protective cover film for underfill protection in accordance with some embodiments of the invention.

At operation 805 of method 800, device wafers are provided by fabrication equipment. A device wafer may include multiple undiced IC dies. In some embodiments, a device wafer may be disposed on a carrier.

At operation 810, the fabrication equipment disposes the underfill layer over the device wafer.

At operation 815, the fabrication equipment disposes the protective cover film over the underfill layer.

At operation 820, the fabrication equipment dices the IC die from the device wafer to form diced IC die. In some embodiments, the diced IC die includes portions of the underfill layer and portions of the protective cover film laminated over the diced IC die.

In some embodiments, dicing the IC die from the device wafer to form the diced IC die includes: as part of dicing the IC die from the device wafer to form the diced IC die, removing The underfill layer and protective cover film located on the area of the device die between IC dies.

In some embodiments, a separation operation is performed in which the fabrication equipment removes areas of the device wafer between the IC dies before dicing the IC dies from the device wafer to form diced IC dies. The underfill layer and protective covering film above. In some embodiments, a separation operation is performed in which the laser source device is directed to emit light toward the protective cap film and the underfill layer at a location on the device wafer over a region between IC dies such that the protective cap film and The underfill layer is separated into portions of the protective capping film and portions of the underfill layer that correspond to respective ones of the IC dies of the device wafer. In some embodiments, the separation operation may be performed prior to dicing the IC die from the device wafer to form diced IC die.

At operation 825, the fabrication equipment removes one or more portions of the protective cover film from the diced die. Removal of one or more portions of the protective cover film exposes respective one or more portions of the underfill layer above the diced IC die.

In some embodiments, removing one or more portions of the protective cover film from the diced IC die includes removing portions of the protective cover film using a degumming operation that removes all portions of the protective cover film.

In some embodiments, removing one or more portions of the protective cover film from the diced IC dies includes removing a portion of the protective cover film over a first of the diced IC dies. first part. The first diced IC die is removed from the carrier, with the other diced IC dies oriented on the carrier. After removing the first diced IC die from the carrier, the second portion of the protective cover film over the second diced IC die is removed.

At operation 830 , the fabrication equipment removes the diced IC die from the carrier 112 . Prior to removing the diced IC die from the carrier 112, the protective covering film portion of the diced die is removed.

At operation 835, the fabrication equipment stacks the diced IC die on top of another IC die (or other object, such as a substrate).

In some embodiments, a method includes: providing a device wafer including integrated circuit (IC) dies; disposing an underfill layer and a protective cap film over the device wafer, wherein the protective cap film is over the underfill layer and coupled to the underfill layer; and dicing IC dies from the device wafer by the processing device to form diced IC dies, wherein the diced IC dies include those disposed on the diced IC The part of the underfill layer above the die and the part of the protective covering film.

In some embodiments, the method includes removing one or more portions of the protective cover film from the diced IC die, wherein removing the one or more portions of the protective cover film exposes the diced IC die. One or more portions of each of the underfill layers. In some embodiments, the method wherein removing one or more portions of the protective cover film from the diced IC die includes removing portions of the protective cover film using a degumming operation that removes the protective cover film all parts of it. In some embodiments, the method, wherein removing one or more portions of the protective cover film from the diced IC die includes removing the first portion of the protective cover film over the first diced IC die; from the carrier removing the first diced IC die, wherein the diced IC die is oriented above the carrier; and after removing the first diced IC die from the carrier, removing the second diced IC die located on the carrier The second part of the protective covering film above the grain. In some embodiments, the method includes stacking the first diced IC die on top of another IC die after removing the first diced IC die.

In some embodiments, the method, wherein dicing the IC die from the device wafer to form the diced IC die includes: as a step of dicing the IC die from the device wafer to form the diced IC die. Partially, remove the underfill layer and protective cover film located on the area of the device die between the IC dies.

In some embodiments, the method includes directing the laser source device to emit light toward the protective cover film and the underfill layer at a location on the device wafer over a region between the IC dies such that the protective cover film and underfill layer The layers are separated into portions of the protective cap film and portions of the underfill layer that correspond to individual ones of the IC dies of the device wafer.

In some embodiments, an apparatus includes: a carrier; an integrated circuit (IC) die of a device wafer positioned over the carrier; and an underfill layer over the IC die; and a protective covering over the underfill layer A film, wherein the protective cover film is coupled to the underfill layer using an adhesive bond, and wherein the underfill layer and the protective cover film over areas of the device wafer between IC dies have been removed.

In some embodiments, the underfill layer includes a non-conductive film, and wherein the underfill layer and protective cover film are laminated to the IC die. In some embodiments, the protective cover film and underfill layer over areas of the device wafer between the IC dies have been removed by emitted light from the laser source device, such that the protective cover film and underfill layer are Separate into portions of the protective cover film and portions of the underfill layer corresponding to respective ones of the IC dies of the device wafer. In some embodiments, the IC dies include IC dies that have been diced from a device wafer, wherein a protective cover film has been removed over a first of the diced IC dies, and wherein The underfill layer located on the first cut IC die is retained. In some embodiments, the carrier includes an open area where a second of the diced IC dies has been removed from the carrier. In some embodiments, a third of the diced IC dies is oriented over the carrier, with a protective cap film and underfill layer remaining over the third diced IC die.

In some embodiments, the method includes: providing a device wafer including integrated circuit (IC) dies; disposing an underfill layer on the device wafer; disposing a protective cover film on the underfill layer; and processing the device by processing the device. IC dies are diced from the device wafer to form diced IC dies, wherein the diced IC dies include portions of the underfill layer and portions of the protective cover film located above the diced IC dies. .

In some embodiments, the method includes removing one or more portions of the protective cover film from the diced IC die, wherein removing the one or more portions of the protective cover film exposes the diced IC die. One or more portions of each of the underfill layers. In some embodiments, wherein removing one or more portions of the protective cover film from the diced IC die includes removing portions of the protective cover film using a degumming operation that removes all portions of the protective cover film . In some embodiments, wherein removing one or more portions of the protective cover film from the diced IC dies includes removing a third portion of the protective cover film over a first diced IC die among the diced IC dies. a portion; removing the first diced IC die from the carrier, wherein the diced IC die is oriented on the carrier; and after removing the first diced IC die from the carrier, removing the diced IC die located on the carrier A second portion of the protective covering film on the second cut IC die. In some embodiments, the method includes stacking the first diced IC die on top of another IC die after removing the first diced IC die.

In some embodiments, the method, wherein dicing the IC die from the device wafer to form the diced IC die includes: as a step of dicing the IC die from the device wafer to form the diced IC die. Partially, remove the underfill layer and protective cover film located on the area of the device die between the IC dies. In some embodiments, the method includes directing the laser source device at a location on the device wafer over a region between the IC dies to emit light directed toward the protective cap film and the underfill layer such that the protective cap film and the underfill layer is separated into portions of the protective cover film and portions of the underfill layer corresponding to respective ones of the IC dies of the device wafer.

For clarity, the description above with respect to Figures 1-8 is incorporated or applied to the description with respect to Figures 9-15 (and vice versa ) unless otherwise described. For example, unless otherwise described , elements, operations, or embodiments described with respect to FIGS . 1-8 are incorporated into or applied to descriptions of similar elements , operations, or embodiments described with respect to FIGS . 9-15 . For example, descriptions regarding the carrier 112 , the dicing tape 106, and the device wafer 110 of FIGS . 1-8 may be applicable to the description regarding the carrier 912 , the dicing tape 906, and the device wafer of FIGS. 9-5 unless otherwise stated . Description of 910. Further for the sake of clarity, the descriptions above with respect to Figures 1 to 8 are generally (but with exceptions) not repeated below with respect to Figures 9 to 15 , but may be incorporated into or applicable to those described with respect to Figures 9 to 15 . any form of description. It should also be noted that any of the operations described with respect to Figures 1-8 may be included in or combined with the operations (or methods) described with respect to Figures 9-15 ( and vice versa ).

Figure 9 illustrates a device wafer used in a fabrication process including a first operation for providing the device wafer on a carrier, in accordance with some embodiments of the invention.

Diagram 900 of FIG. 9 shows device wafer 910 oriented above carrier 912. Device wafer 910 may include any number of IC wafers that have been fabricated on device wafer 910 . The carrier 912 may include one or more of a frame 908 and a dicing strip 906 . In some embodiments, dicing tape 906 may be transparent or partially transparent. Specifically, in some embodiments, dicing strip 906 is transparent or partially transparent to the wavelength (or range of wavelengths) of light used to perform the exposure operations as further described with respect to FIG. 12 .

Figure 10 illustrates diced IC die from a device wafer used in a manufacturing process that includes a second operation for separating the IC die from the device wafer, according to some embodiments of the present invention.

Diagram 1000 of FIG. 10 shows diced IC dies 1020A through 1020J (generally referred to herein as "diced IC dies 1020"). It may be noted that diced IC die 1020A to 1010J are provided for purposes of illustration and not limitation. In some embodiments, any number of diced IC dies 1020 may be provided.

In some embodiments, diced IC die 1020 are disposed on dicing tape 906 of carrier 912 . Device wafer 110 includes IC dies (eg, uncut as shown in Figure 9 ). In some embodiments, the IC die of device wafer 910 are separated (eg, diced) from device wafer 910 to form diced IC die 1020 . In some embodiments, a cleaning operation is performed on the cut IC die 1020 to remove any loose particles associated with separating the IC die from the device wafer 910 . For example, one or more solvents may be used to remove loose particles from carrier 912 and diced IC die 1020. In some embodiments, any type of cleaning operation may be performed to clean carrier 912 and diced IC die 1020.

In some embodiments, diced IC die 1020 are positioned on dicing tape 906 to provide open spaces between sides of adjacent diced IC dies 1020 (e.g., open spaces 1050A and 1050B, herein Also known as the "deep erosion path").

In some embodiments, device wafer 910 is a non-reconstructed wafer, as shown in FIG. 9 . A non-reconstructed wafer may refer to a semiconductor wafer on which electronic circuits (eg, multiple IC dies) are directly fabricated. For some embodiments using non-reconstructed wafers, carrier 912 is a carrier with an undiced device wafer 910 (eg, a non-reconstructed wafer as depicted in Figure 9 ) disposed thereon, in The device wafer 910 on the carrier is separated into diced IC dies 1020, and an underfill layer and a protective cover film are disposed on the carrier. In some embodiments using non-reconstructed wafers, all diced IC dies 1020 are from the same device wafer 910 .

In other embodiments, reconstructed wafers may be used. A reconstituted wafer may refer to a wafer having IC dies that have been diced from the device wafer, removed from the respective carrier on which the IC dies were diced, and attached (at least some) to a substrate (eg, a carrier substrate) or directly attached to a dicing tape on a different carrier. In some cases, the cleaved IC dies of the reconstructed wafer may be from one or more device wafers.

Figure 11 illustrates diced IC dies of a device wafer used in a manufacturing process that includes forming an underfill layer and a protective capping film over the diced IC dies, in accordance with some embodiments of the invention. The third operation.

Diagram 1100 of FIG. 11 shows a diced IC die 1020 and an underfill layer 1114 and a protective cover film 1116 disposed over the diced IC die 1020 . In some embodiments, the diced IC die 1020 is disposed on the dicing tape 906 of the carrier 912 . The diced IC dies 1020 are positioned on the dicing tape 906 to provide open spaces (eg, deep etch channels) between the sides of adjacent diced IC dies 1020 .

In some embodiments, underfill layer 1114 and protective cover film 1116 are disposed over open spaces between diced IC die 1020 and adjacent diced IC dies 1020 . A protective cover film 1116 is positioned over the underfill layer 1114 . It should be noted that the configuration of the underfill layer 1114 and protective cover film 1116 is further described above and specifically with respect to FIG. 2 . In some embodiments, one or more of underfill layer 1114 or protective cover film 1116 includes one or more photodefinable materials (also referred to herein as "photosensitive materials"). Photodefinable may refer to a property of a material wherein exposure to light (eg, a specific range or specific wavelength) causes the material to be modified (eg, a change in the material's properties, such as hardening or softening the material). The photodefinable material can be patterned by exposing the material to a pattern of light. The hardened photodefinable material can remain, while the unhardened (or degraded) photodefinable material can be removed, resulting in a specific pattern of photodefinable material.

In some embodiments, the photodefinable material may include a positive-acting photodefinable material. For positive-acting photodefinable materials, light is directed to the photodefinable material in the area where removal is intended. When a positive-acting photodefinable material is exposed to light, the chemical structure of the material changes and becomes more soluble in the photodeveloper. These exposed areas of photodefinable material can be washed away with a photodeveloper solvent, leaving underlying material. Areas of photodefinable material that are not exposed to light are insoluble in the photodeveloper. A replica of the desired pattern can be applied to the positively acting photodefinable material.

In some embodiments, the photodefinable material may include a negative-acting photodefinable material. For negative-acting photodefinable materials, exposure can cause the chemical structure of the photodefinable material to polymerize, which has the opposite effect to positive-acting photodefinable materials. Negatively acting photodefinable materials can become less soluble rather than more soluble. Thus, the negative effects of exposure to photodefinable material can remain while the photoresist developer solution acts to remove areas not exposed to light. The inverse pattern of the desired characteristics can be applied to negatively acting photodefinable materials.

12 illustrates diced IC dies of a device wafer used in a fabrication process that includes performing an exposure operation to form one of an underfill layer or a protective capping film , in accordance with some embodiments of the invention. The fourth operation to produce patterns on more than one.

Diagram 1200 of FIG. 12 illustrates the performance of an exposure operation to produce pattern 1256 on one or more of underfill layer 1114 or protective cover film 1116. A pattern may refer to a design created on a material in which some areas of the material change the material properties of the material based on exposure of those areas to light (e.g., curing the material), while other areas of the material have no material properties based on the absence of exposure. changes in characteristics. The exposure operation may refer to the application of one or more wavelengths (or ranges of wavelengths of light) of light to the photodefinable material. The exposure operation may produce a pattern in or on the photodefinable material based on the exposure. In addition to the wavelength of light, one or more of the exposure duration or exposure power can also be controlled during the exposure operation.

In some embodiments and as shown, light source 1252 projects light 1254 through the underside of dicing tape 906 and through the open space to areas of underfill layer 1114 and protective cover film 1116 to form pattern 1256 . Pattern 1256 represents areas of underfill layer 1114 and protective capping film 1116 (e.g., above the etch channels) in dashed lines to demonstrate modification due to exposure of light 1254 through the etch channels between diced IC dies 1020 Underfill layer 1114 and protective cover film 1116 in these areas. It should be noted that during the exposure operation, the recessed channels of the cut IC die 1020 can be used as a "virtual" mask. In some embodiments in which light 1254 is projected upwardly through the etch channel, the one or more photodefinable materials included in the underfill layer 1114 and the protective cover film 1116 are positive-acting photodefinable materials. In some embodiments where light 1254 is projected upwardly through the etch channel, the underfill layer 1114 is opaque or partially transparent to the wavelength of light used in the exposure operation.

In some embodiments and as shown in FIG. 12 , both the underfill layer 1114 and the protective cover film 1116 include one or more photodefinable materials such that an exposure operation can be used to form the underfill layer 1114 and the protective cover film 1116 pattern is formed on it. In other embodiments, one or more of the underfill layer 1114 or the protective cover film 1116 does not include a photodefinable material. For example, underfill layer 1114 may include one or more photodefinable materials, and protective cover film 1116 may include no photodefinable material.

In some embodiments, to perform an exposure operation to create a pattern on one or more of underfill layer 1114 or protective cover film 1116 , light is projected through the top surface of protective cover film 1116 to underfill layer 1114 to form pattern. For example, a masked (or maskless) exposure operation may project light from above the protective cover film 1116 to form a pattern. In such embodiments, one or more of the photodefinable materials of the underfill layer 1114 or the protective cover film 1116 may include positive-acting or negative-acting photodefinable materials. In some embodiments where light is projected from the protective cover film 1116, at least the protective cover film 1116 is transparent or partially transparent to the wavelength of light used in the exposure operation.

Figure 13 illustrates cleaved IC dies of a device wafer used in a fabrication process that includes openings between sides of adjacent cleaved IC dies, in accordance with some embodiments of the invention. The fifth operation is to remove the underfill layer and protective covering film from the area above the space.

Diagram 1300 of FIG. 13 illustrates pattern-based removal of underfill layer 1114 and protective capping film 1116 at an area above the open space between sides of adjacent diced IC dies 1020 to form portions of the protective capping film. 1316 and part 1314 of the underfill layer.

In some embodiments, a development operation may be performed in order to remove the underfill layer 1114 and protective cover film 1116 at the area above the open space. The developing operation may include exposing the underfill layer 1114 and the protective cover film 1116 to a developing solution (e.g., chemical removal) to remove the underfill layer 1114 in areas above the open space (e.g., that have been patterned) and Protective cover film 1116. For example, the solvent may include one or more of acetone or tetramethylammonium hydroxide (TMAH). In some embodiments, the developing operation also includes a cleaning operation to clean loose particles produced by removing the underfill layer 1114 and the protective cover film 1116 at the area above the open space. For example, isopropyl alcohol (IPA) can be used to clean loose particles.

14A illustrates diced IC dies of a device wafer used in a manufacturing process that includes a sixth operation for removing one or more portions of a protective cover film , in accordance with some embodiments of the invention.

The illustration 1400 of Figure 14A is similar to the illustration 500 of Figure 5A , and for the sake of brevity, the description of Figure 5A is not repeated here in its entirety. In some embodiments, one or more portions 1316 of the protective cover film are removed from the diced IC die 1020. In some embodiments, as shown, the degumming operation removes all portions 1316 of the protective cover film. After all portions of the protective cover film 1316 are removed, the diced IC die 1020 may be removed from the carrier 912 and used in subsequent operations, such as die stacking as described with respect to FIG. 6 .

Figure 14B illustrates diced IC dies of a device wafer used in a manufacturing process that includes a seventh operation for removing one or more portions of a protective cover film, in accordance with some embodiments of the invention.

Illustration 1450 of Figure 14B shows selectively removed portions 1316 of the protective cover film. Illustration 1450 of Figure 14B is similar to illustration 550 of Figure 5B , and for the sake of brevity, the description of Figure 5B is not repeated here in its entirety.

In some embodiments, one or more diced dies on carrier 912 allow respective portions of the protective cover film to be removed (eg, a selective debonding operation), while other diced ICs on carrier 912 The die did not allow individual portions of the protective covering film to be removed. In some embodiments, a first portion of the protective cover film over the first diced die may be removed. The first diced die may be removed from carrier 912 . After the first diced IC die is removed from carrier 912, the second portion of the protective cover film over the second IC die is removed. In some embodiments, after the first diced IC die is removed, the first diced IC die is stacked on top of another IC die as described with respect to FIG. 6 .

In some embodiments, a portion of the protective cover film of the first diced IC die of diced IC die 1020 may be removed. The underfill layer of the first cut IC die can be retained. Carrier 912 may include an open area where a second diced IC die has been previously removed prior to removal of the protective cover film of the first diced IC die. has been removed. The third diced IC die may also be oriented on the carrier 912 . The protective cover film and underfill layer over the third diced IC die remain (eg, when the first or second diced IC die is removed from carrier 912 ) and protect the third diced IC The die and one of its underfill layers are partially protected from contamination.

Components of FIGS. 1-6 and 9-14B may be described below to facilitate illustrating the method 1500 of FIG . 15 . Method 1500 may be performed as one or more operations. It may be noted that method 1500 may be performed in any order and may include the same, different, more, or fewer operations. It may be noted that method 1500 may be performed by one or more pieces of semiconductor fabrication equipment or fabrication tools, hereinafter referred to as fabrication equipment.

15 illustrates a flow diagram of a manufacturing process using a protective capping film and an underfill layer over a diced IC die , in accordance with some embodiments of the present invention.

In operation 1505 of method 1500, fabrication equipment provides device wafers. A device wafer may include multiple undiced IC dies. In some embodiments, device wafers may be disposed on a dicing tape of a carrier.

At operation 1510, the fabrication equipment separates the IC die from the device wafer to form diced IC die. In some embodiments, diced IC dies are positioned on the dicing tape to provide open space between sides of adjacent diced IC dies.

At operation 1515, the production device performs a cleaning operation. Cleaning operations can remove loose particles associated with separating IC dies from device wafers.

At operation 1520, diced IC dies are provided. In some embodiments, the diced IC dies are disposed on a dicing tape of the carrier. As described above, the diced IC dies are positioned on the dicing tape to provide open space between the sides of adjacent diced IC dies.

At operation 1525, the fabrication equipment disposes an underfill layer and a protective cover film over the open space between the diced IC die and the sides of adjacent diced IC dies. A protective cover film is positioned over the underfill layer. In some embodiments, the underfill layer and protective cover film include one or more photodefinable materials.

In some embodiments, the fabrication equipment configures the underfill layer and the underfill layer separately. For example, the fabrication equipment places an underfill layer on top of the diced IC die and on the open space between the sides of adjacent diced IC dies. The underfill layer includes one or more photodefinable materials. The manufacturing equipment then places a protective cover film on top of the underfill layer.

At operation 1530, the production device performs an exposure operation. The exposure operation may produce a pattern on one or more of the underfill layer or the protective cover film.

In some embodiments, to perform an exposure operation to create a pattern on the underfill layer and protective cover film, the fabrication device projects light through the underside of the dicing tape and through the open space to the underfill layer above the open space. and areas of protective covering to create patterns.

In some embodiments, to perform an exposure operation to create a pattern on the underfill layer and the protective cover film, the fabrication device projects light through the top surface of the protective cover film onto the underfill layer to form the pattern.

In some embodiments, an exposure operation is performed to create a pattern on the underfill layer. The protective cover film may or may not have a photodefinable material, and may or may not be patterned using an exposure operation.

At operation 1535, the fabrication equipment removes the underfill layer and protective cover film in the area above the open space. In some embodiments, fabrication equipment removes an underfill layer and a protective cover film based on the pattern at an area above the open space between sides of adjacent diced IC dies to form a configuration on the diced IC dies. The part of the underfill layer above the die and the part of the protective covering film.

In some embodiments, fabrication equipment removes one or more portions of the protective cover film from the diced IC die. In some embodiments, removing one or more portions of the protective cover film exposes respective one or more portions of the underfill layer over the diced IC die.

In some embodiments, removing one or more portions of the protective cover film from the diced IC die includes removing portions of the protective cover film using a degumming operation that removes all portions of the protective cover film.

In some embodiments, removing one or more portions of the protective cover film from the diced IC die includes removing a first portion of the protective cover film over the first diced IC die. The first cut IC die is removed from the carrier. The cut IC dies are oriented on the carrier. After removing the first diced IC die from the carrier, the second portion of the protective cover film over the second diced IC die is removed.

In some embodiments, the fabrication equipment removes the diced IC die from the carrier such that respective portions of the protective cover film are removed. In some embodiments, the fabrication equipment stacks the diced die on top of another IC die or a different object such as a substrate (eg, flip chip).

In some embodiments, the fabrication equipment removes the underfill layer based on the pattern at an area above the open space between adjacent sides of the cleaved IC die to produce an underfill layer disposed over the cleaved IC die. part. Protective covering film in removable or non-removable areas. The protective cover film may or may not include photodefinable material, and may or may not be cut into portions of the protective cover film. In some cases, instead of using a photodefinable material (eg, laser, saw, etc.), the protective cover film can be cut into portions. In some embodiments, the protective cover film is removed prior to removing the underfill layer in the area above the open space.

In some embodiments, a method includes providing diced integrated circuit (IC) dies on a dicing tape of a carrier, wherein the diced IC dies are positioned on the dicing tape to be on adjacent dicing tapes. An open space is provided between the sides of the cut IC die; an underfill layer is disposed on the open space between the sides of the cut IC die and the adjacent cut IC die, wherein the underfill layer includes an or a plurality of photodefinable materials; disposing a protective cover film over the underfill layer; performing an exposure operation to create a pattern on the underfill layer; and based on the pattern, openings between sides of adjacent cleaved IC dies The underfill layer is removed from the area above the space to form a portion of the underfill layer disposed above the cut IC die.

In some embodiments, the method further includes providing a device wafer on a dicing tape of the carrier, wherein the device wafer includes an IC die; and separating the IC die from the device wafer to form a diced IC die. grain. In some embodiments, the method, wherein performing an exposure operation to create a pattern on the underfill layer includes projecting light through an underside of the dicing strip and the open space to an area of the underfill layer to form the pattern.

Figure 16 shows a computing device fabricated in accordance with an embodiment of the present invention. Computing device 1600 may include a number of components. In one embodiment, the components are attached to one or more circuit boards, such as a motherboard. In alternative embodiments, some or all of these components are fabricated onto a single system-on-chip (SoC) die, such as an SoC for mobile devices. In an embodiment, components in computing device 1600 include, but are not limited to, stacked IC die 1602 and at least one communication logic unit 1608 . In some embodiments, communication logic unit 1608 is fabricated in a separate integrated circuit die that may be bonded to a substrate that is common with stacked IC die 1602 or electrically coupled to the stacked IC die. or motherboard. Stacked IC die 1602 may include, for example, IC die 622B, underfill 622A, IC die 624B, underfill layer 624A, and IC die 628. It may be noted that in embodiments, the stacked IC die 1602 may include additional components (eg, additional IC dies on the stacked die, processors, etc.). In another example, stacked IC die 1602 may include some or all of the elements described herein, as well as additional elements.

Computing device 1600 may include other components that may or may not be physically and electrically coupled to the motherboard or fabricated within the SoC die. Such other components include, but are not limited to, volatile memory 1610 (e.g., DRAM), non-volatile memory 1612 (e.g., ROM or flash memory), graphics processing unit 1614 (GPU), digital signal processor 1616, Crypto processor 1642 (e.g., a dedicated processor that executes cryptographic algorithms in hardware), chipset 1620, at least one antenna 1622 (in some embodiments, two or more antennas may be used), a display, or a touch screen. Touch screen display 1624 (for example, may include stacked IC die 602), touch screen controller 1626, battery 1628 or other power source, power amplifier (not shown), voltage regulator (not shown), global positioning system (GPS) ) device 1627, compass (not shown), motion co-processor or sensor 1632 (can include accelerometer, gyroscope and compass) (not shown), microphone (not shown), speaker 1634, camera 1636, user input Devices 1638 (such as keyboards, mice, stylus pens, and trackpads) and mass storage devices 1640 (such as hard drives, compact discs (CDs), digital versatile disks (DVDs), etc.). Computing device 1600 may incorporate other transmission, telecommunications, or radio functions not described herein. In some embodiments, computing device 1600 includes a radio for communicating over long distances by modulating and radiating electromagnetic waves in air or space. In another embodiment, computing device 1600 includes transmitters and receivers (or transceivers) for communicating over long distances by modulating and radiating electromagnetic waves in air or space.

Communications logic 1608 enables wireless communications for transferring data to and from computing device 1600 . The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communication channels, etc. that may be mediated through the use of non-solid media Transform electromagnetic radiation to transmit data. This term does not mean that the associated device does not include any wires, although in some embodiments it may not. Communications logic 1608 may implement any of a variety of wireless standards or protocols, including, but not limited to, Wi-Fi (IEEE 802.11 series), WiMAX (IEEE 802.16 series), IEEE 802.20, Long Term Evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Infrared (IR), Near Field Communication (NFC), Bluetooth and their derivatives, and anything designated as 3G, 4G, 5G and beyond 5G Other wireless protocols. Computing device 1600 may include a plurality of communication logic units 1608 . For example, the first communication logic unit 1608 may be dedicated to shorter range wireless communications, such as Wi-Fi, NFC, and Bluetooth, while the second communication logic unit 1608 may be dedicated to longer range wireless communications, such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, etc.

Processor 1604 (also referred to herein as a "processing device") may refer to processing electronic data from a register and/or memory to convert the electronic data into a form that can be stored in the register and/or memory. Any device or part of a device containing other electronic data. Processor 1604 represents one or more general-purpose processing devices, such as a microprocessor, central processing unit, etc. More specifically, processor 1604 may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor that implements other instruction sets. Or several processors that implement a combination of several instruction sets. The processor 1604 may also be one or more special purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), a network processor, etc.

In various embodiments, the computing device 1600 may be a laptop, a mini-notebook, a notebook, an Ultrabook, a smartphone, a non-smartphone, a tablet, a tablet/laptop hybrid , personal digital assistant (PDA), super mobile PC, mobile phone, desktop computer, server, printer, scanner, monitor, set-top box, entertainment control unit, digital video camera, portable music player or Digital video recorder. In other embodiments, computing device 1600 may be any other electronic device that processes data.

Some portions of the foregoing detailed description have been presented in terms of symbolic representations of algorithms and operations on data bits within computer memory. These algorithm descriptions and representations are the means used by those skilled in the data processing arts to convey the nature of their work to others skilled in the art. An algorithm is here and generally thought of as a self-consistent sequence of operations that leads to a desired result. Operations are operations that require physical manipulation of physical quantities. Usually, but not necessarily, these quantities may take the form of electrical or magnetic signals capable of being stored, combined, compared, or otherwise manipulated. It has sometimes proven convenient (mainly for reasons of commonality) to refer to such signals as bits, values, elements, symbols, characters, terms, digits, etc.

However, it should be remembered that all these and similar terms are associated with the appropriate physical quantities and are merely convenient labels applied to such quantities. The present invention may refer to the actions and processes of a computer system or similar electronic computing device, which manipulates and transforms data represented as physical (electronic) quantities in the registers and memories of the computer system into similarly represented as the memory of the computer system. or other data of physical quantities within a register or other such information storage system.

The invention also relates to apparatus for performing the operations herein. This device may be specially constructed for a specific purpose, or it may comprise a general-purpose computer selectively activated or reconfigured by a computer program stored in the computer. This computer program may be stored on a computer-readable storage medium, such as, but not limited to, any type of disk, including floppy disks, optical disks, CD-ROMs and magneto-optical disks, read-only memory (ROM), random access memory ( RAM), EPROM, EEPROM, magnetic or optical cards, or any type of media suitable for storing electronic instructions, each coupled to a computer system bus.

The algorithms or operations presented in this disclosure are not inherently related to any particular computer or other device. Various general-purpose systems may be used with programs in accordance with the teachings herein, or it may prove convenient to construct more specialized apparatus to perform the methods. The structure of various such systems will be described below. Additionally, the invention is described without reference to any particular programming language. It should be appreciated that a variety of programming languages may be used to implement the teachings of the present invention as described herein.

The invention may be provided as a computer program product or software, which may include a machine-readable medium having instructions stored thereon that may be used to program a computer system (or other electronic device) to perform in accordance with the invention handle. Machine-readable media includes any mechanism for storing information in a form readable by a machine (eg, a computer). In some embodiments, machine-readable (eg, computer-readable) media includes machine-readable (eg, computer-readable) storage media, such as read-only memory ("ROM"), random access memory ("RAM") , disk storage media, optical storage media, flash memory components, etc.

The word "example" or "illustrative" is used here to mean "an example, situation, or illustration of use." Any aspect or design described herein as an "example" or "illustrative" is not necessarily to be construed as better or advantageous over other aspects or designs. Rather, the purpose of using the word "example" or "illustrative" is to present the concept in a concrete manner. As used in this application, the term "or" is intended to mean an inclusive "or" rather than a mutually exclusive "or". That is, unless otherwise specified, or clear from the context, "X includes A or B" is intended to mean either of the natural inclusive permutations. That is, if X includes A; In addition, unless otherwise specified or the context clearly refers to the singular form, the articles "a" and "an" as used in the patent scope of this application and the appended claims shall generally be construed to mean "One or more". Furthermore, use of the terms "example" or "one example" or "implementation" or "one implementation" or the like throughout this document may or may not refer to the same example or implementation. One or more of the examples or implementations described herein may be combined in a particular example or implementation. As used herein, the terms "first," "second," "third," "fourth," etc. are meant as labels to distinguish between different elements and may not necessarily have an ordinal meaning assigned by their numbers.

As used herein, the terms “over,” “on,” “under,” “between,” and “on” refer to one layer or component of material relative to another layer or component its relative position. For example, a layer disposed on or above or below another layer may be in direct contact with the other layer, or may have one or more intervening layers. Additionally, a layer disposed between two layers may be in direct contact with both layers, or may have one or more intermediate layers. Instead, the first layer "on" the second layer is in direct contact with the second layer. Similarly, unless expressly stated otherwise, a feature disposed between two features may be in direct contact with the adjacent feature or may have one or more intervening layers.

In the foregoing specification, embodiments of the invention have been described with reference to specific example embodiments thereof. It will be apparent that various modifications may be made without departing from the broader spirit and scope of the embodiments of the invention as set forth in the appended claims. Therefore, the description and drawings should be considered illustrative rather than restrictive.

100:Illustration 106: diced tape 108:Frame 110:Device wafer 112: Carrier 200:Illustration 214: Bottom filling layer 216: Protective covering film 300:Illustration 314: Part of the bottom filling layer 316: Part of the protective covering film 318:Laser source device 400:Illustration 420: Cut integrated circuit (IC) die 500:Illustration 550:Illustration 600:Illustration 622A: Part of the bottom filling layer 622B: Cut integrated circuit (IC) die 624A: Part of the bottom filling layer 624B: Cut integrated circuit (IC) die 626:Device wafer 628:Grain 630: Device stacking 700:Method 705: Operation 710: Operation 715:Operation 720: Operation 725: Operation 730: Operation 800:Method 805: Operation 810:Operation 815:Operation 820: Operation 825:Operation 830: Operation 835:Operation 900:Illustration 906: Dicing tape 908:Frame 910: Device wafer 912: Carrier 1000:Illustration 1020: Cut integrated circuit (IC) die 1020A: Cut integrated circuit (IC) die 1020B: Cut integrated circuit (IC) die 1020C: Cut integrated circuit (IC) die 1020D: Cut integrated circuit (IC) die 1020E: Cut integrated circuit (IC) die 1020F: Cut integrated circuit (IC) die 1020G: Cut integrated circuit (IC) die 1020H: Cut integrated circuit (IC) die 1020I: Cut integrated circuit (IC) die 1020J: Cut integrated circuit (IC) die 1050A: Open space 1050B: Open space 1100:Illustration 1114: Bottom filling layer 1116:Protective covering film 1200:Illustration 1252:Light source 1254:Light 1256:Pattern 1300:Illustration 1314: Part of the bottom filling layer 1316: Part of the protective covering film 1400:Illustration 1450:Illustration 1500:Method 1505: Operation 1510:Operation 1515:Operation 1520:Operation 1525:Operation 1530:Operation 1535:Operation 1600:Computing devices 1602: Stacked integrated circuit (IC) die 1604: Processor 1608: Communication logic unit 1610: Volatile memory 1612:Non-volatile memory 1614: Graphics processing unit (GPU) 1616:Digital signal processor 1620:Chipset 1622:antenna 1624:Monitor or touch screen display 1626:Touch screen controller 1627: Global Positioning System (GPS) device 1628:Battery 1632: Motion co-processor or sensor 1634: Speaker 1636:Camera 1638: User input device 1640: Mass storage device 1642: Encryption processor

The present invention will be more fully understood from the detailed description given below and from the accompanying drawings of various embodiments of the invention. However, the drawings should not be used to limit the invention to specific embodiments, but are merely for explanation and understanding.

Figure 1 illustrates a device wafer used in a manufacturing process including a first operation for providing the device wafer on a carrier, in accordance with some embodiments of the invention.

Figure 2 illustrates a device wafer used in a fabrication process that includes a second operation for forming an underfill layer and a protective capping film over the device wafer, in accordance with some embodiments of the invention.

3 illustrates a device wafer used in a fabrication process that includes removing underfill over areas of the device wafer between IC dies of the device wafer , in accordance with some embodiments of the invention. The third operation of layer and protective covering film.

4 illustrates a device wafer used in a manufacturing process that includes a fourth operation for dicing IC dies from the device wafer to form diced IC dies , in accordance with some embodiments of the invention.

Figure 5A illustrates a device wafer used in a manufacturing process that includes a fifth operation for removing one or more portions of a protective cover film, in accordance with some embodiments of the invention.

Figure 5B illustrates a device wafer used in a manufacturing process including a sixth operation for removing one or more portions of a protective cover film, in accordance with some embodiments of the invention.

Figure 6 illustrates a device stack during a manufacturing process that includes a seventh operation of stacking multiple dies on top of each other, in accordance with some embodiments of the invention.

7 illustrates a flow diagram of a fabrication process for using a protective cover film for underfill protection in accordance with some embodiments of the invention.

8 illustrates a flow diagram of a fabrication process for using a protective cover film for underfill protection in accordance with some embodiments of the invention.

Figure 9 illustrates a device wafer used in a fabrication process including a first operation for providing the device wafer on a carrier, in accordance with some embodiments of the invention.

Figure 10 illustrates diced IC die from a device wafer used in a manufacturing process that includes a second operation for separating the IC die from the device wafer, according to some embodiments of the present invention.

Figure 11 illustrates diced IC dies of a device wafer used in a manufacturing process that includes forming an underfill layer and a protective capping film over the diced IC dies, in accordance with some embodiments of the invention. The third operation.

12 illustrates diced IC dies of a device wafer used in a fabrication process that includes performing an exposure operation to form one of an underfill layer or a protective capping film , in accordance with some embodiments of the invention. The fourth operation to produce patterns on more than one.

Figure 13 illustrates cleaved IC dies of a device wafer used in a fabrication process that includes openings between sides of adjacent cleaved IC dies, in accordance with some embodiments of the invention. The fifth operation is to remove the underfill layer and protective covering film from the area above the space.

14A illustrates diced IC dies of a device wafer used in a manufacturing process that includes a sixth operation for removing one or more portions of a protective cover film , in accordance with some embodiments of the invention.

Figure 14B illustrates diced IC dies of a device wafer used in a manufacturing process that includes a seventh operation for removing one or more portions of a protective cover film, in accordance with some embodiments of the invention.

15 illustrates a flow diagram of a manufacturing process using a protective capping film and an underfill layer over a diced IC die , in accordance with some embodiments of the present invention.

Figure 16 shows a computing device fabricated in accordance with an embodiment of the present invention.

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Claims (18)

A method comprising providing diced integrated circuit (IC) dies on a dicing tape of a carrier, wherein the diced IC dies are positioned on the dicing tape to be adjacent to each other. An open space is provided between the sides of the cut IC dies; an underfill layer is disposed over the open space between the sides of the cut IC dies and the adjacent cut IC dies. and a protective cover film, wherein the protective cover film is positioned over the underfill layer, wherein the underfill layer and the protective cover film include one or more photodefinable materials; performing an exposure operation to form a layer of light on the underfill layer and A pattern is created on the protective cover film; and based on the pattern, the underfill layer and the protective cover are removed at the area above the open space between the sides of the adjacent cut IC dies film to form a portion of the underfill layer and a portion of the protective cover film disposed on the cut IC dies. The method of claim 1, further comprising: providing a device wafer on the dicing tape of the carrier, wherein the device wafer contains IC dies; and separating the IC dies from the device wafer, To form the cut IC dies. The method of claim 2, further comprising: performing a cleaning operation to remove components associated with separating the IC dies from the device wafer. of loose particles. The method of claim 1, wherein performing the exposure operation to produce the pattern on the underfill layer and the protective cover film includes: projecting light to the underfill layer through a bottom surface of the dicing tape and the open space and the area of the protective covering film to form the pattern. The method of claim 1, wherein performing the exposure operation to produce the pattern on the underfill layer and the protective cover film includes: projecting light through a top surface of the protective cover film onto the underfill layer to form the pattern. The method of claim 1, further comprising: removing one or more portions of the protective cover film from the diced IC dies, wherein the removing the one or more portions of the protective cover film will be exposed Respective one or more portions of the underfill layer over the diced IC dies. The method of claim 6, wherein removing the one or more portions of the protective cover film from the diced IC dies includes: performing a degumming operation that removes all of the portions of the protective cover film part. The method of claim 6, wherein the protective covering film is removed from the diced IC dies The one or more portions include: removing a first portion of the protective cover film over a first diced IC die; removing the first diced IC die from the carrier; and removing the first diced IC die from the carrier. After the carrier removes the first cut IC die, a second portion of the protective covering film on a second cut IC die is removed. The method of claim 8, further comprising: after removing the first cleaved IC die, stacking the first cleaved IC die on top of another IC die. A device comprising: a carrier; diced integrated circuit (IC) dies positioned on the carrier, wherein the diced IC dies are positioned on the carrier to overlap adjacent diced IC dies. providing open space between the sides of the IC dies; and an underfill layer located over the diced IC dies; and a protective cover film located over the underfill layer, wherein the protective cover film is used an adhesive bond coupled to the underfill layer, wherein the underfill layer includes a non-conductive film, wherein the underfill layer and the protective cover film are laminated to the IC dies, and wherein the underfill layer or One or more of the protective cover films include a photodefinable material that is produced in the underfill layer or the protective cover film using an exposure operation that causes light to impinge on the underfill layer and the protective cover film One or more patterns. The device of claim 10, wherein the diced IC dies are separated from a device wafer located on the carrier. The device of claim 10, wherein the underfill layer and the protective cover film are removed at an area above the open space between the sides of the adjacent diced IC dies based on the pattern, To form a portion of the underfill layer and a portion of the protective cover film disposed on the cut IC dies. The device of claim 12, wherein a portion of the protective cover film over a first one of the diced IC dies is removed, and wherein the first diced IC die The bottom filling layer above the grain is retained. The device of claim 13, wherein the carrier includes an open area at which a second one of the diced IC dies has been removed from the carrier. The device of claim 14, wherein a third one of the diced IC dies is oriented over the carrier, and wherein the protective covering over the third diced IC die The film and this underfill layer remain. A method, which includes: providing a device wafer including integrated circuit (IC) dies; disposing an underfill layer and a protective cover film on the device wafer, wherein the protective cover film a protective cover film over the underfill layer and coupled to the underfill layer, wherein the underfill layer and the protective cover film are connected to each other before disposing the underfill layer and the protective cover film on the device wafer Pre-bonding; and dicing the IC dies from the device wafer by a processing device to form diced IC dies, wherein the diced IC dies include those disposed on the diced IC dies. The part of the underfill layer and the part of the protective covering film above the particles. The method of claim 16, further comprising: directing a laser source device at a position over a region of the device wafer between the IC dies toward the protective cover film and the underfill layer Emitting light causes the protective cover film and the underfill layer to be separated into portions of the protective cover film and portions of the underfill layer corresponding to respective ones of the IC dies of the device wafer. The method of claim 16, further comprising: removing one or more portions of the protective cover film from the diced IC dies, wherein the removing the one or more portions of the protective cover film will be exposed Respective one or more portions of the underfill layer over the diced IC dies.