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TWI800309B - 具有記憶元件的半導體裝置 - Google Patents

具有記憶元件的半導體裝置 Download PDF

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Publication number
TWI800309B
TWI800309B TW111109885A TW111109885A TWI800309B TW I800309 B TWI800309 B TW I800309B TW 111109885 A TW111109885 A TW 111109885A TW 111109885 A TW111109885 A TW 111109885A TW I800309 B TWI800309 B TW I800309B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
memory element
memory
semiconductor
Prior art date
Application number
TW111109885A
Other languages
English (en)
Other versions
TW202247421A (zh
Inventor
原田望
作井康司
Original Assignee
新加坡商新加坡優尼山帝斯電子私人有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新加坡商新加坡優尼山帝斯電子私人有限公司 filed Critical 新加坡商新加坡優尼山帝斯電子私人有限公司
Publication of TW202247421A publication Critical patent/TW202247421A/zh
Application granted granted Critical
Publication of TWI800309B publication Critical patent/TWI800309B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
TW111109885A 2021-04-15 2022-03-17 具有記憶元件的半導體裝置 TWI800309B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2021/015533 2021-04-15
PCT/JP2021/015533 WO2022219767A1 (ja) 2021-04-15 2021-04-15 メモリ素子を有する半導体装置

Publications (2)

Publication Number Publication Date
TW202247421A TW202247421A (zh) 2022-12-01
TWI800309B true TWI800309B (zh) 2023-04-21

Family

ID=83603085

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111109885A TWI800309B (zh) 2021-04-15 2022-03-17 具有記憶元件的半導體裝置

Country Status (3)

Country Link
US (1) US11776609B2 (zh)
TW (1) TWI800309B (zh)
WO (1) WO2022219767A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022168220A1 (ja) * 2021-02-04 2022-08-11 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
US20220392900A1 (en) * 2021-03-29 2022-12-08 Unisantis Electronics Singapore Pte. Ltd. Memory device using semiconductor element and method for manufacturing the same
US12262533B2 (en) * 2022-04-28 2025-03-25 Yangtze Memory Technologies Co., Ltd. Dynamic flash memory (DFM) with multi-cells
CN119366278A (zh) * 2022-06-10 2025-01-24 新加坡优尼山帝斯电子私人有限公司 半导体内存装置
WO2024116244A1 (ja) * 2022-11-28 2024-06-06 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド メモリ素子を有した半導体装置
US20240179886A1 (en) * 2022-11-28 2024-05-30 Unisantis Electronics Singapore Pte. Ltd. Memory-element-including semiconductor device
JP7762991B1 (ja) 2024-06-03 2025-10-31 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202046455A (zh) * 2019-06-05 2020-12-16 新加坡商新加坡優尼山帝斯電子私人有限公司 柱狀半導體裝置的製造方法
US20210104608A1 (en) * 2017-06-05 2021-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of manufacturing the semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JPH03171768A (ja) 1989-11-30 1991-07-25 Toshiba Corp 半導体記憶装置
JP3957774B2 (ja) 1995-06-23 2007-08-15 株式会社東芝 半導体装置
JP3808763B2 (ja) 2001-12-14 2006-08-16 株式会社東芝 半導体メモリ装置およびその製造方法
JP3898715B2 (ja) * 2004-09-09 2007-03-28 株式会社東芝 半導体装置およびその製造方法
JP4919767B2 (ja) 2006-11-10 2012-04-18 株式会社東芝 半導体記憶装置
JP5078338B2 (ja) 2006-12-12 2012-11-21 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4791986B2 (ja) 2007-03-01 2011-10-12 株式会社東芝 半導体記憶装置
JP2009038201A (ja) * 2007-08-01 2009-02-19 Elpida Memory Inc 半導体装置および半導体装置の製造方法
US9595587B2 (en) * 2014-04-23 2017-03-14 Alpha And Omega Semiconductor Incorporated Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs
JP6104477B2 (ja) 2015-04-06 2017-03-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 柱状半導体メモリ装置と、その製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210104608A1 (en) * 2017-06-05 2021-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of manufacturing the semiconductor device
TW202046455A (zh) * 2019-06-05 2020-12-16 新加坡商新加坡優尼山帝斯電子私人有限公司 柱狀半導體裝置的製造方法

Also Published As

Publication number Publication date
WO2022219767A1 (ja) 2022-10-20
US20220336003A1 (en) 2022-10-20
TW202247421A (zh) 2022-12-01
US11776609B2 (en) 2023-10-03

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