TWI899641B - Multi-chip module - Google Patents

Abstract

An interposer device includes a substrate that includes a laser source chip interface region, a silicon photonics chip interface region, an optical amplifier module interface region. A fiber-to-interposer connection region is formed within the substrate. A first group of optical conveyance structures is formed within the substrate to optically connect a laser source chip to a silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced to the substrate. A second group of optical conveyance structures is formed within the substrate to optically connect the silicon photonics chip to an optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced to the substrate. A third group of optical conveyance structures is formed within the substrate to optically connect the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced to the substrate.

Description

Multi-chip module

This invention relates to optical data communications.

Optical data communication systems operate by encoding digital data patterns using modulated laser light. The modulated laser light is transmitted from a transmitting node through an optical data network to a receiving node. Upon reaching the receiving node, the modulated laser light is demodulated to obtain the original digital data pattern. Therefore, the implementation and operation of optical data communication systems depend on reliable and efficient laser light sources and optical processing systems. Furthermore, it is generally desirable that the laser light sources and optical processing devices of optical data communication systems have minimal form factors and be designed to be as cost- and energy-efficient as possible. The present invention was developed in this context.

In one exemplary embodiment, an interposer device is disclosed. The interposer device includes a substrate having a laser source chip interface region for receiving a laser source chip. The substrate also includes a silicon photonics chip interface region for receiving a silicon photonics chip. The substrate also includes an optical amplifier module interface region for receiving an optical amplifier module. An optical fiber to interposer connection region is formed within the substrate. The interposer device also includes a first set of optical transmission structures formed within the substrate to optically connect the laser source chip to the silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced with the substrate. The interposer device also includes a second set of optical transmission structures formed within the substrate for optically connecting the silicon photonics chip to the optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced with the substrate. The interposer device also includes a third set of optical transmission structures formed within the substrate for optically connecting the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced with the substrate.

In an exemplary embodiment, a multi-chip module is disclosed. The multi-chip module includes an interposer device. The multi-chip module also includes a laser source chip connected to the interposer device. The multi-chip module also includes a silicon photonics chip connected to the interposer device. The multi-chip module also includes an optical amplifier module connected to the interposer device. The interposer device includes a first set of optical transmission structures for optically connecting the laser source chip to the silicon photonics chip. The interposer device also includes a second set of optical transmission structures for optically connecting the silicon photonics chip to the optical amplifier module. The interposer device also includes a third set of optical transmission structures for optically connecting the optical amplifier module to a fiber-to-interposer connection region formed within the interposer device.

In an exemplary embodiment, a mechanical transmission ferrule is disclosed. The mechanical transmission ferrule includes an upper half, the upper half including an upper alignment key. The mechanical transmission ferrule also includes a lower half, the lower half including a lower alignment key. The upper alignment key and the lower alignment key are adapted to mate together to align and mate the upper and lower half. Each of the upper and lower halfs is adapted to receive an outer edge of an insert device between the upper and lower halfs, such that when the upper half is mated to the lower half, a light guide exposed at an edge of the outer edge of the insert device is exposed at a location between the upper and lower halfs.

In an exemplary embodiment, a method for manufacturing a multi-chip module is disclosed. The method includes providing an interposer device. The method also includes connecting a laser source chip to the interposer device. The method also includes connecting a silicon photonics chip to the interposer device. The method also includes connecting an optical amplifier module to the interposer device. The interposer device includes a first set of optical transmission structures optically connecting the laser source chip to the silicon photonics chip. The interposer device also includes a second set of optical transmission structures optically connecting the silicon photonics chip to the optical amplifier module. The interposer device also includes a third set of optical transmission structures optically connecting the optical amplifier module to a fiber-to-interposer connection region formed within the interposer device.

100A: Laser Module

100B: Laser Module

100C: Laser Module

100D: Laser Module

100E: Laser Module

100F: Laser Module

102: Laser Source

102A: Laser Source

103-1 to 103-N: Laser

104-1 to 104-N: Optical output interface

105: Light Guide

107: Optical Orchestration Module

107A: Optical Orchestration Module

107B: Optical Orchestration Module

107C: Optical Orchestration Module

106-1 to 106-N: Line

108-1 to 108-N: Optical input interface

109-1 to 109-M: Optical output interface

110:Substrate

111: Components

200:PLC

201-1 to 201-N: Laser beam

301: Light Guide

303-1 to 303-N: Optical amplifier modules

303: Optical Amplifier Module

303A: Optical Amplifier Module

304-1 to 304-M: Optical input interface

305-1 to 305-M: Optical Amplifiers

306-1 to 306-M: Optical output interface

307: Components

401: Component

501-1 to 501-M: Line

503:PLC

601:PLC

701: Wavelength combiner

703: Light Guide

705: Wideband Power Divider

801: Arrayed waveguides

803: Light Guide

805: Wideband Power Divider

901: Step Grating

903: Light Guide

905: Wideband Power Divider

1001:Butterfly waveguide network

1021:Substrate

1022: Epitaxial layer

1023: Epitaxial layer

1024: Epitaxial layer

1025: Planarization layer

1026: Conductive interconnect structure

1027: Partial

1101: Star Coupler

1201: Harmonic Ring Array

1203: Harmony Ring

1701: Operation

1703: Operation

1705: Operation

1801: Insert device

1801A: Insert device

1801B: Insert device

1801C: Insert device

1803: Silicon Photonic Die/Chip

1805A to 1805D: Die/Wafer

1901: Polarization Rotator

1903: Fiber optic to insert connector

1905: Light-guiding structure

1907: Light-guiding structure

1909-1 to 1909-N: Light-guiding structures

1911: Light Guide

1913: Light Guide

1915-1 to 1915-N: Light Guide

2100: Cavity/Depression

2101: Light Guide

2103: Side protrusions

2103A: Side protrusions

2103B: Side protrusions

2201: Die/Chip

2301: Upper half

2303: Lower half

2305: Alignment Key

2307: Partial hole

2309: Partial hole

2311: Tab

2313: Light Guide

2601: Insert device

2701: Operation

2703: Operation

2705: Operation

2707: Operation

AMWL-1 to AMWL-M: Multi-wavelength laser output

MWL-1 to MWL-M: Multi-wavelength laser output

_R1 to _RN : Resonance ring series

Figure 1A shows a structural diagram of a laser module according to certain embodiments of the present invention.

FIG1B shows a side view of the laser module of FIG1A according to certain embodiments of the present invention.

Figure 1C shows a side view of the laser module of Figure 1A according to certain embodiments of the present invention, wherein the light guide is not present.

FIG1D shows a side view of the laser module structure of FIG1C according to certain embodiments of the present invention, wherein the empty space between the laser source and the light arrangement module is covered and/or sealed by a component.

FIG1E shows a side view of the laser module of FIG1A according to certain embodiments of the present invention, wherein the light guide is absent and the laser source and the light-orchestrating module are arranged in side-by-side contact.

FIG1F shows a side view of the laser module of FIG1A according to certain embodiments of the present invention, wherein the light guide is absent and the laser source and the light-organizing module are arranged in vertically overlapping contact.

FIG1G shows a side view of the laser module structure of FIG1F according to certain embodiments of the present invention, wherein the light orchestration module extends across the laser source so that the light orchestration module provides physical support for the placement of the laser source within the laser module.

Figure 2A shows a structural diagram of a laser module according to certain embodiments of the present invention.

Figure 2B shows a side view of a PLC according to certain embodiments of the present invention.

Figure 3A shows a structural diagram of a laser module according to certain embodiments of the present invention. The laser module includes a laser source, a light arrangement module, and a light amplification module.

FIG3B shows a side view of the laser module of FIG3A according to certain embodiments of the present invention, wherein light guide 105 is present and light guide 301 is present.

FIG3C shows a side view of the laser module of FIG3A according to certain embodiments of the present invention, wherein light guide 105 is present and light guide 301 is absent.

FIG3D shows a side view of the laser module structure of FIG3C according to certain embodiments of the present invention, wherein the empty space between the optical arrangement module and the optical amplification module is covered and/or sealed by a component.

FIG3E shows a side view of the laser module of FIG3A according to certain embodiments of the present invention, wherein light guide 105 is present and light guide 301 is absent, and the optical arrangement module and the optical amplification module are arranged in a side-by-side contact manner.

FIG3F shows a side view of the laser module of FIG3A according to certain embodiments of the present invention, wherein the light guide is absent and the optical arrangement module and the optical amplification module are arranged in a vertically overlapping contact manner.

FIG3G shows a side view of the laser module structure of FIG3F according to certain embodiments of the present invention, wherein the optical amplification module extends across the optical arrangement module, the light guide, and the laser source so that the optical amplification module provides physical support for the arrangement of each of the optical arrangement module, the light guide, and the laser source within the laser module.

Figure 3H shows a side view of a modification of the laser module structure of Figure 3B according to certain embodiments of the present invention, in which the light guide is absent.

Figure 3I shows a side view of a modification of the laser module structure of Figure 3C according to certain embodiments of the present invention, in which the light guide is not present.

Figure 3J shows a side view of a modification of the laser module structure of Figure 3E according to certain embodiments of the present invention, in which the light guide is absent.

Figure 3K shows a side view of a modification of the laser module structure of Figure 3F according to certain embodiments of the present invention, in which the light guide is absent.

Figure 3L shows a side view of a modification of the laser module structure of Figure 3G according to certain embodiments of the present invention, in which the light guide is absent.

FIG3M shows a side view of a modification of the laser module structure of FIG3B according to certain embodiments of the present invention, wherein the laser source and the light-orchestrating module are arranged in side-by-side contact.

Figure 3N shows a side view of a modification of the laser module structure of Figure 3C according to certain embodiments of the present invention, wherein the laser source and the light-orchestrating module are arranged in side-by-side contact.

FIG3O shows a side view of a modification of the laser module structure of FIG3E according to certain embodiments of the present invention, wherein the laser source and the light-orchestrating module are arranged in side-by-side contact.

Figure 3P shows a side view of a modification of the laser module structure of Figure 3F according to certain embodiments of the present invention, wherein the laser source and the light-organizing module are arranged in side-by-side contact.

Figure 3Q shows a side view of a modification of the laser module structure of Figure 3G according to certain embodiments of the present invention, wherein the laser source and the light-orchestrating module are arranged in side-by-side contact.

FIG3R shows a side view of a modification of the laser module structure of FIG3B according to certain embodiments of the present invention, wherein the laser source and the light-organizing module are arranged in a vertically overlapping contact manner.

FIG3S shows a side view of a modification of the laser module structure of FIG3R according to certain embodiments of the present invention, wherein the light-marshalling module extends across the laser source, light guide, and light-amplifying module.

Figure 3T shows a side view of a modification of the laser module structure of Figure 3R according to certain embodiments of the present invention, in which the light guide is not present.

Figure 3U shows a side view of a modification of the laser module structure of Figure 3S according to certain embodiments of the present invention, in which the light guide is absent.

FIG3V shows a side view of a modification of the laser module structure of FIG3T according to certain embodiments of the present invention, wherein the light guide is absent and the optical arrangement module and the optical amplification module are arranged in a side-by-side contact manner.

FIG3W shows a side view of a modification of the laser module structure of FIG3S according to certain embodiments of the present invention, wherein the light guide is absent and the light arrangement module and the light amplification module are arranged in a side-by-side contact manner.

FIG3X shows a side view of a modification of the laser module structure of FIG3R according to certain embodiments of the present invention, wherein the light guide is absent and the optical arrangement module and the optical amplification module are arranged in a vertically overlapping contact manner.

FIG3Y shows a side view of a modification of the laser module structure of FIG3X according to certain embodiments of the present invention, wherein the light orchestration module extends across the laser source and the light amplification module so that the light orchestration module provides physical support for the placement of each of the laser source and the light amplification module within the laser module.

Figure 4A shows a structural diagram of a laser module according to certain embodiments of the present invention.

FIG4B shows a side view of the laser module structure of FIG4A according to certain embodiments of the present invention.

Figure 4C shows a side view of the laser module of Figure 4B according to certain embodiments of the present invention, wherein the light guide is not present.

FIG4D shows a side view of the laser module structure of FIG4C according to certain embodiments of the present invention, wherein the empty space between the PLC and the optical amplifier module is covered and/or sealed by a component.

FIG4E shows a side view of the laser module of FIG4A according to certain embodiments of the present invention, wherein the light guide is absent and the PLC and the optical amplifier module are arranged in a side-by-side contact configuration.

Figure 5A shows a structural diagram of a laser module according to certain embodiments of the present invention, in which the optical arrangement module and the optical amplification module are implemented together in the same PLC.

FIG5B shows a side view of the laser module structure of FIG5A according to certain embodiments of the present invention.

FIG5C shows a side view of the laser module structure of FIG5B according to certain embodiments of the present invention, wherein the light guide is not present.

FIG5D shows a side view of the laser module structure of FIG5C according to certain embodiments of the present invention, wherein the empty space between the laser source and the PLC is covered and/or sealed by a member.

Figure 5E shows a side view of the laser module of Figure 5A according to certain embodiments of the present invention, wherein the light guide is absent and the laser source and PLC are arranged in side-by-side contact.

Figure 6A shows a structural diagram of a laser module according to certain embodiments of the present invention, wherein the laser source, light arrangement module, and amplification module are implemented together in the same PLC.

FIG6B shows a side view of the laser module structure of FIG6A according to certain embodiments of the present invention.

FIG7 shows an exemplary embodiment of an optical orchestration module according to certain embodiments of the present invention, which includes an Nx1 (polarization-maintaining) wavelength combiner and a 1xM (polarization-maintaining) broadband power divider.

FIG8 shows an exemplary embodiment of an optical orchestration module according to certain embodiments of the present invention, which includes an array of waveguides and a broadband power divider.

FIG9 shows an exemplary embodiment of an optical orchestration module according to certain embodiments of the present invention, which includes a step grating and a broadband power divider.

FIG10 shows an exemplary embodiment of an optical orchestration module according to certain embodiments of the present invention, which includes a butterfly waveguide network.

FIG11 shows an exemplary embodiment of an optical orchestration module according to certain embodiments of the present invention, which includes a star coupler.

FIG12A shows an exemplary embodiment of an optical orchestration module according to certain embodiments of the present invention, which includes a resonant ring array.

FIG12B shows a detailed diagram of a resonant ring array according to the present invention.

FIG13 shows an exemplary embodiment of the laser module of FIG6A on a PLC according to certain embodiments of the present invention, wherein the module is arranged to include an array of waveguides and a broadband power divider.

FIG14 shows an exemplary embodiment of the laser module of FIG6A on a PLC according to certain embodiments of the present invention, wherein an arrangement module is employed to include a step grating and a broadband power divider.

FIG15 shows an exemplary embodiment of the laser module of FIG6A on a PLC according to certain embodiments of the present invention, wherein the module is arranged to include a butterfly waveguide network.

FIG16 shows an exemplary embodiment of the laser module of FIG6A on a PLC according to certain embodiments of the present invention, wherein the module is arranged to include a star coupler.

Figure 17 shows a flow chart of a laser module operating method according to certain embodiments of the present invention.

FIG18A shows an exemplary interposer device according to certain embodiments of the present invention, in which the functions of the substrate and the waveguide are combined.

FIG18B shows a top view of an interposer device according to certain embodiments of the present invention to illustrate the flexibility of positioning the die/chip relative to the interposer device.

FIG19 shows a planar block diagram of an interposer device according to certain embodiments of the present invention, the interposer device being part of an MCM integrated product.

FIG20A shows a vertical cross-sectional block diagram of an interposer device according to certain embodiments of the present invention, the interposer device being part of an MCM integrated product.

FIG20B shows another vertical cross-sectional block diagram of an interposer device according to certain embodiments of the present invention, the interposer device being part of an MCM integrated product.

FIG20C shows another vertical cross-sectional block diagram of an interposer device according to certain embodiments of the present invention, the interposer device being part of an MCM integrated product.

Figure 21 shows an isometric view of the top surface of an exemplary insert device according to certain embodiments of the present invention.

FIG. 22 shows the exemplary interposer device of FIG. 21 with a die/chip disposed within a cavity/recess according to certain exemplary embodiments of the present invention.

Figures 23A to 23F illustrate an integrated MT ferrule for connection to an interposer device according to certain embodiments of the present invention.

FIG24 shows an exemplary vertical cross-section of a through-laser source according to certain embodiments of the present invention.

FIG25 shows a vertical cross-sectional view of FIG24 after etching the planarization layer to expose a portion of the epitaxial layer (third photonic layer) according to certain embodiments of the present invention.

FIG26 shows a vertical cross-sectional view of the laser source of FIG25 flip-chip connected to an interposer device according to certain embodiments of the present invention.

Figure 27 shows a flow chart of a multi-chip module (MCM) manufacturing method according to certain embodiments of the present invention.

In the following description, numerous specific details are set forth to provide a thorough understanding of the present invention. However, it should be understood that one skilled in the art may practice the present invention without some or all of these specific details. In other instances, well-known processing operations are not described in detail to avoid unnecessarily obscuring the present invention.

Various embodiments of laser modules and related methods are disclosed herein. The laser modules are designed and configured to provide laser light having one or more wavelengths. It should be understood that the term "wavelength" as used herein refers to the wavelength of electromagnetic radiation. Furthermore, the term "light" as used herein refers to electromagnetic radiation that falls within a portion of the electromagnetic spectrum that can be used by optical data communication systems. In some embodiments, the portion of the electromagnetic spectrum includes light having wavelengths extending from approximately 1100 nanometers to approximately 1565 nanometers (covering the O-band to the C-band of the electromagnetic spectrum, inclusive). However, it should be understood that the portion of the electromagnetic spectrum referred to herein may include light having wavelengths less than 1100 nanometers or greater than 1565 nanometers, as long as such light can be used in optical data communication systems that encode, transmit, and decode digital data via optical modulation/demodulation. In some embodiments, the light used in the optical data communication system has a wavelength in the near-infrared portion of the electromagnetic spectrum. Furthermore, the term "laser beam" as used herein refers to a beam generated by a laser device. It should be understood that the laser beam can be confined to propagate within an optical waveguide, such as, but not limited to, a lightguide within a fiber optic planar lightwave circuit (PLC). In some embodiments, the laser beam is polarized. Furthermore, in some embodiments, the light of a particular laser beam has a single wavelength, where the single wavelength may refer to substantially one wavelength or may refer to a narrow band of wavelengths that can be recognized and processed by an optical data communication system as if it were a single wavelength.

FIG1A shows a block diagram of a laser module 100A according to certain embodiments of the present invention. Laser module 100A includes a laser source 102 and an optical orchestration module 107. Laser source 102 is configured to generate and output a plurality of laser beams, i.e., (N) laser beams. The plurality of laser beams have different wavelengths (λ1-λN), wherein the different wavelengths (λ1-λN) are distinguishable by an optical data communication system. In certain embodiments, laser source 102 includes a plurality of lasers 103-1 to 103-N configured to respectively generate a plurality of (N) laser beams, wherein each of lasers 103-1 to 103-N generates and outputs a laser beam having a wavelength corresponding to one of the different wavelengths (λ1-λN). Each laser beam generated by the plurality of lasers 103-1 to 103-N is provided to optical output interfaces 104-1 to 104-N of the laser source 102 for transmission from the laser source 102. In some embodiments, each of the plurality of lasers 103-1 to 103-N is a distributed feedback laser configured to generate laser light at a specific wavelength among different wavelengths (λ1-λN). In some embodiments, the laser source 102 may be defined as a separate component, such as a separate chip. However, in other embodiments, the laser source 102 may be integrated into a planar lightwave circuit (PLC) on a chip that includes other components in addition to the laser source 102.

In the exemplary embodiment of FIG1A , laser source 102 is defined as a discrete component attached to substrate 110 , such as an electronic package substrate. In various embodiments, substrate 110 can be an organic substrate, a ceramic substrate, or substantially any other type of substrate on which electronic devices and/or optoelectronic devices and/or light guides and/or optical fibers/fiber ribbons can be mounted. For example, in some embodiments, substrate 110 can be an indium (III-V) phosphide substrate. Alternatively, in another example, substrate 110 can be an Al ₂ O ₃ structure. It should be understood that in various embodiments, the laser source 102 can be attached/mounted to the substrate 110 using substantially any known electronic packaging process, such as flip-chip bonding, which can optionally include placing a ball grid array (BGA), bumps, solder, underfill, and/or other component(s) between the laser source 102 and the substrate 110 and including bonding techniques such as mass reflow, thermal compression bonding (TCB), or substantially any other suitable bonding technique. In various embodiments, the substrate 110 can be silicon, a silicon interposer device, glass, or other suitable substrate.

Optical orchestration module 107 is configured to receive a plurality of laser beams having different wavelengths (λ1-λN) from laser source 102 at a plurality of corresponding optical input interfaces 108-1 to 108-N of optical orchestration module 107. Optical orchestration module 107 is also configured to distribute a portion of each of the plurality of laser beams to each of the plurality of optical output interfaces 109-1 to 109-M of optical orchestration module 107, where (M) is the number of optical output interfaces of optical orchestration module 107. Optical orchestration module 107 distributes the plurality of laser beams such that all of the different wavelengths (λ1-λN) of the plurality of laser beams are provided to each of the plurality of optical output interfaces 109-1 to 109-M of optical orchestration module 107. As shown in FIG1A , light orchestration module 107 operates to provide multiple laser beams having different wavelengths (λ1-λN) to each of optical output interfaces 109-1 through 109-M of light orchestration module 107. Thus, for laser module 100A, each of optical output interfaces 109-1 through 109-M of light orchestration module 107 provides a corresponding one of the multiple multi-wavelength laser outputs MWL-1 through MWL-M.

In some embodiments, the optical arrangement module 107 is configured to maintain polarization of each of the plurality of laser beams between the plurality of optical input interfaces 108-1 to 108-N of the optical arrangement module 107 and the plurality of optical output interfaces 109-1 to 109-M of the optical arrangement module 107. Furthermore, in some embodiments, the optical arrangement module 107 is configured such that each of the plurality of optical output interfaces 109-1 to 109-M of the optical arrangement module 107 receives a similar optical power within five times that of any particular beam in the plurality of laser beams. In other words, in some embodiments, the amount of light of a specific wavelength (i.e., one of the different wavelengths (λ1-λN)) provided by optical orchestration module 107 to a specific one of optical output interfaces 109-1 through 109-M is equal to or less than five times the amount of light of a specific wavelength provided by optical orchestration module 107 to the other optical output interfaces 109-1 through 109-M. It should be understood that the aforementioned five times is an exemplary embodiment. In other embodiments, the aforementioned five times can be changed to two, three, four, six, or any other value in between, less than, or greater than this value. It should be understood that the optical orchestration module 107 can be used to control the amount of light of a specific wavelength provided by each of the optical output interfaces 109-1 through 109-M of the optical orchestration module 107, and therefore can be used to control the uniformity of the amount of light of a specific wavelength provided by each of the optical output interfaces 109-1 through 109-M of the optical orchestration module 107.

In the exemplary embodiment of FIG1A , light orchestration module 107 is defined as a separate component attached to substrate 110. Therefore, it should be understood that in the exemplary embodiment of laser module 100A, laser source 102 and light orchestration module 107 are physically separate components. It should be understood that, in various embodiments, light orchestration module 107 can be attached/mounted to substrate 110 using substantially any known electronic packaging process. Furthermore, in some embodiments, light orchestration module 107 is configured as a non-electronic component, such as a passive component, and can be attached/mounted to substrate 110 using techniques that do not involve establishing electrical contact between light orchestration module 107 and substrate 110, such as using epoxy or other types of adhesive materials. In some embodiments, light orchestration module 107 may be integrated into a PLC on a chip that includes other components besides light orchestration module 107, rather than being defined as a separate component. In some embodiments, both light orchestration module 107 and laser source 102 may be implemented in the same PLC.

Laser source 102 is aligned with optical orchestration module 107 to guide multiple laser beams transmitted from optical outputs 104-1 to 104-N of laser source 102 into corresponding optical input interfaces 108-1 to 108-N of optical orchestration module 107. In some embodiments, optical orchestration module 107 is separate from laser source 102. In some embodiments, optical orchestration module 107 is in contact with laser source 102. Furthermore, in some embodiments, a portion of optical orchestration module 107 overlaps with a portion of laser source 102. In the exemplary embodiment of laser module 100A shown in FIG1A , optical orchestration module 107 is separate from laser source 102, and light guide 105 is located between laser source 102 and optical orchestration module 107. Light guide 105 is used to guide the plurality of laser beams from laser source 102 to corresponding ones of the plurality of optical input interfaces 108-1 to 108-N of optical orchestration module 107, as indicated by lines 106-1 to 106-N.

In various embodiments, light guide 105 can be formed from virtually any material as long as light energy can be transmitted from an entrance location on light guide 105 to an exit location thereof. For example, in various embodiments, light guide 105 can be formed from glass, SiN, SiO ₂ , germanium oxide, and/or silicon dioxide, among others. In some embodiments, light guide 105 is used to maintain polarization of a plurality of laser beams between laser source 102 and light orchestration module 107. In some embodiments, light guide 105 includes (N) optical transmission channels, each of which extends from a corresponding one of optical output interfaces 104 - 1 to 104 -N of laser source 102 to a corresponding one of optical input interfaces 108 - 1 to 108 -N of light orchestration module 107. In some embodiments, each of the (N) light transmission channels of the light guide 105 has a substantially rectangular cross-section in a plane perpendicular to the propagation direction of the laser beam (i.e., perpendicular to the x-direction as shown in FIG. 1A ). This serves to maintain the polarization of the laser beam as it propagates from the laser source 102 to the light orchestration module 107.

In the exemplary embodiment of FIG1A , light guide 105 is defined as a separate component attached to substrate 110. Therefore, it should be understood that in the exemplary embodiment of laser module 100A, laser source 102, light guide 105, and light orchestration module 107 are physically separate components. It should be understood that, in various embodiments, light guide 105 can be attached/mounted to substrate 110 using substantially any known electronic packaging process. Furthermore, in some embodiments, light guide 105 is configured as a non-electronic component, such as a passive component, and can be attached/mounted to substrate 110 using techniques that do not involve establishing electrical contact between light guide 105 and substrate 110, such as using epoxy or other types of adhesive materials. In some embodiments, light guide 105 may be integrated into a PLC on a chip that includes other components besides light guide 105, rather than being defined as a separate component. In some embodiments, laser source 102, light guide 105, and light orchestration module 107 may be implemented within the same PLC.

In some embodiments, laser module 100A includes a heat-distribution element positioned adjacent to laser source 102. The heat-distribution element is used to distribute the heat output of the plurality of lasers 103-1 through 103-N, thereby providing substantial uniformity in temperature-dependent wavelength shifts across the plurality of lasers 103-1 through 103-N. In some embodiments, the heat-distribution element is included within laser source 102. In some embodiments, the heat-distribution element is included within substrate 110. In some embodiments, the heat-distribution element is formed separately from each of laser source 102, light-orchestrating module 107, and substrate 110. In some embodiments, the heat-distribution element is included within light-orchestrating module 107, and a portion of the heat-distribution element of light-orchestrating module 107 physically overlaps with laser source 102. In some embodiments, a heat dissipation element is included within the light guide 105, and the heat dissipation element portion of the light guide 105 is physically overlapped with the laser source 102. In various embodiments, the heat dissipation element is formed from a thermally conductive material, such as a metal. In some embodiments, the heat dissipation element may include an element, such as a thermoelectric cooling element, for actively transferring heat away from the plurality of lasers 103-1 to 103-N. Furthermore, in some embodiments, the heat dissipation element is formed with a sufficiently large mass to function as a heat sink to dissipate heat from the plurality of lasers 103-1 to 103-N of the laser source 102.

FIG1B shows a side view of a laser module 100A according to certain embodiments of the present invention, wherein light guide 105 is present. In the embodiment of FIG1B , laser source 102 and light orchestration module 107 are disposed on substrate 110 in a substantially coplanar manner such that optical output interfaces 104-1 through 104-N of laser source 102 are horizontally aligned with optical input interfaces 108-1 through 108-N of light orchestration module 107, respectively. This eliminates the need for laser beam rotation at optical output interfaces 104-1 through 104-N of laser source 102 or at optical input interfaces 108-1 through 108-N of light orchestration module 107.

FIG1C shows a side view of a laser module 100A according to certain embodiments of the present invention, wherein light guide 105 is absent. In the embodiment of FIG1C , laser source 102 and light orchestration module 107 are disposed on substrate 110 in a substantially coplanar manner such that optical output interfaces 104-1 through 104-N of laser source 102 are horizontally aligned with optical input interfaces 108-1 through 108-N of light orchestration module 107, respectively. This eliminates the need for laser beam rotation at optical output interfaces 104-1 through 104-N of laser source 102 or at optical input interfaces 108-1 through 108-N of light orchestration module 107. In the embodiment of Figure 1C , empty space exists between the optical output interfaces 104-1 to 104-N of the laser source 102 and the optical input interfaces 108-1 to 108-N of the optical orchestration module 107. Therefore, in the embodiment of Figure 1C , the laser beams output from the laser source 102 travel along respective straight paths through the empty space between the laser source 102 and the optical orchestration module 107.

FIG1D shows a side view of the laser module 100A structure of FIG1C according to certain embodiments of the present invention, wherein the space between the laser source 102 and the light orchestration module 107 is covered and/or sealed by a component 111. In various embodiments, component 111 may be another chip or another material provided during packaging, or may be an integral component of the laser source 102 or the light orchestration module 107.

FIG1E shows a side view of a laser module 100A according to certain embodiments of the present invention, wherein light guide 105 is absent and laser source 102 and light orchestration module 107 are arranged in side-by-side contact. In the exemplary laser module 100A structure of FIG1E , laser source 102 and light orchestration module 107 are disposed on substrate 110 in a substantially coplanar manner, such that optical output interfaces 104-1 through 104-N of laser source 102 are horizontally aligned with optical input interfaces 108-1 through 108-N of light orchestration module 107, respectively. This eliminates the need for laser beam rotation at optical output interfaces 104-1 through 104-N of laser source 102 or optical input interfaces 108-1 through 108-N of light orchestration module 107.

FIG1F shows a side view of a laser module 100A according to certain embodiments of the present invention, wherein the light guide 105 is absent and the laser source 102 and the light-orchestrating module 107 are arranged in a vertically overlapping contact configuration. In the exemplary laser module 100A structure of FIG1F , the substrate 110 is used to support both the laser source 102 and the light-orchestrating module 107. In the exemplary laser module 100A structure of FIG1F , the optical output interfaces 104-1 to 104-N of the laser source 102 are vertically aligned with the optical input interfaces 108-1 to 108-N of the optical orchestration module 107, respectively, to achieve rotation of the laser beam at the optical output interfaces 104-1 to 104-N of the laser source 102 and at the optical input interfaces 108-1 to 108-N of the optical orchestration module 107. FIG1G shows a side view of the structure of the laser module 100A of FIG1F according to certain embodiments of the present invention, wherein the optical orchestration module 107 extends across the laser source 102 so that the optical orchestration module 107 provides physical support for the placement of the laser source 102 within the laser module 100A. In the structure of the exemplary laser module 100A of FIG1G , substrate 110 can be omitted if light orchestration module 107 is formed with sufficient mechanical strength to physically support itself and laser source 102.

FIG2A illustrates a block diagram of a laser module 100B according to certain embodiments of the present invention. Laser module 100B includes a laser source 102A and a light orchestration module 107A implemented within the same PLC 200. The functionality of laser source 102A is substantially the same as that of laser source 102 described above for laser module 100A. The functionality of light orchestration module 107A is substantially the same as that of light orchestration module 107 described above for laser module 100A. FIG2B illustrates a side view of PLC 200 according to certain embodiments of the present invention. In PLC 200, laser source 102A and optical orchestration module 107A are integrated with each other, allowing laser beams 201-1 to 201-N generated by multiple lasers 103-1 to 103-N to be guided to optical orchestration module 107A without having to pass through optical output and optical input interfaces, respectively. Furthermore, in PLC 200, the optical integration between laser source 102A and optical orchestration module 107A eliminates the need for a separate light guide 105.

In some embodiments, laser source 102 generates multiple laser beams at different wavelengths (λ1-λN) with sufficient power so that the multi-wavelength laser outputs MWL-1 through MWL-M output from optical orchestration module 107/107A have sufficient power for use in optical data communication. However, in some embodiments, due to output power limitations of laser source 102 and/or optical losses in light guide 105 and/or optical orchestration module 107, the multi-wavelength laser outputs MWL-1 through MWL-M output from optical orchestration module 107/107A do not have sufficient power for use in optical data communication. Therefore, in some embodiments, the multi-wavelength laser outputs MWL-1 through MWL-M output from optical orchestration module 107/107A need to be optically amplified before use in optical data communication. Each of the multi-wavelength laser outputs MWL-1 through MWL-M can be optically amplified using an optical amplifier. In various embodiments, the optical amplifier can be implemented directly within the laser module.

Figure 3A shows the structure of a laser module 100C according to certain embodiments of the present invention. Laser module 100C includes a laser source 102, a light-orchestrating module 107, and an optical amplifier module 303. The configuration of laser source 102 is substantially the same as that described above for laser module 100A. Furthermore, the configuration of light-orchestrating module 107 is substantially the same as that described above for laser module 100A. Furthermore, in certain embodiments, laser module 100C may include a light guide 105 located between laser source 102 and light-orchestrating module 107, with the configuration of light guide 105 being the same as that described above for laser module 100A.

Optical amplifier module 303 is configured to receive, at corresponding optical input interfaces 304-1 to 304-M of optical amplifier module 303, a plurality of received multi-wavelength laser outputs MWL-1 to MWL-M from corresponding optical output interfaces 109-1 to 109-M of optical orchestration module 107. Optical amplifier module 303 includes a plurality of optical amplifiers 305-1 to 305-M, each configured to amplify the plurality of multi-wavelength laser outputs MWL-1 to MWL-M received at the plurality of optical input interfaces 304-1 to 304-M of optical amplifier module 303. In various embodiments, the plurality of optical amplifiers 305-1 to 305-M may be defined as one or more semiconductor optical amplifiers, gerbium/fermium doped fiber amplifiers, or Raman amplifiers. Optical amplifiers 305-1 through 305-M are configured and optically connected to provide amplified versions of the plurality of multi-wavelength laser outputs AMWL-1 through AMWL-M to the plurality of optical output interfaces 306-1 through 306-M of the optical amplifier module 303, respectively. In this manner, for the laser module 100C, each of the optical output interfaces 306-1 through 306-M of the optical amplifier module 303 provides a corresponding one of the plurality of amplified multi-wavelength laser outputs AMWL-1 through AMWL-M. In certain embodiments, the optical amplifier module 303 is configured to maintain the polarization of each of the plurality of laser beams between the plurality of optical input interfaces 304-1 through 304-M of the optical amplifier module 303 and the plurality of optical output interfaces 306-1 through 306-M of the optical amplifier module 303.

In the exemplary embodiment of FIG. 3A , the optical amplifier module 303 is defined as a separate component attached to the substrate 110 . Therefore, it should be understood that in the exemplary embodiment of the laser module 100C, the laser source 102 , the optical orchestration module 107 , and the optical amplifier module 303 are physically separate components. It should be understood that in various embodiments, the optical amplifier module 303 can be attached/mounted to the substrate 110 using substantially any known electronic packaging process, such as flip-chip bonding. The electronic packaging process may optionally include placing a ball grid array (BGA), bumps, solder, underfill, and/or other component(s) between the optical amplifier module 303 and the substrate 110 and including bonding techniques such as mass reflow, thermal compression bonding (TCB), or substantially any other suitable bonding technique.

Optical orchestration module 107 is aligned with optical amplifier module 303 to guide multi-wavelength laser outputs MWL-1 to MWL-M into corresponding optical input interfaces 304-1 to 304-M of optical amplifier module 303. In some embodiments, optical amplifier module 303 is separate from optical orchestration module 107. In some embodiments, optical amplifier module 303 is in contact with optical orchestration module 107. Furthermore, in some embodiments, a portion of optical amplifier module 303 overlaps with a portion of optical orchestration module 107 and/or a portion of laser source 102. In an exemplary embodiment of laser module 100C, as shown in FIG3A , optical amplifier module 303 is positioned separate from optical orchestration module 107, and light guide 301 is located between optical orchestration module 107 and optical amplifier module 303. The light guide 301 is used to guide the multiple multi-wavelength laser outputs MWL-1 to MWL-M from the optical arrangement module 107 to the corresponding ones of the multiple optical input interfaces 304-1 to 304-M of the optical amplification module 303.

In various embodiments, light guide 301 can be formed from virtually any material as long as light energy can be transmitted from an entrance location on light guide 301 to an exit location thereof. For example, in various embodiments, light guide 301 can be formed from glass, SiN, SiO ₂ , germanium oxide, and/or silicon dioxide. In some embodiments, light guide 301 is used to maintain polarization of a plurality of multi-wavelength laser outputs MWL-1 to MWL-M between optical orchestration module 107 and optical amplifier module 303. In some embodiments, light guide 301 includes (M) optical transmission channels, each of which extends from a corresponding one of optical output interfaces 109-1 to 109-M of optical orchestration module 107 to a corresponding one of optical input interfaces 304-1 to 304-M of optical amplifier module 303. In some embodiments, each of the (M) optical transmission channels of the light guide 301 has a substantially rectangular cross-section in a plane perpendicular to the propagation direction of the multi-wavelength laser output (i.e., perpendicular to the x-direction as shown in FIG. 3A ). This serves to maintain the polarization of the multi-wavelength laser output as it propagates from the optical orchestration module 107 to the optical amplification module 303.

In the exemplary embodiment of FIG3A , light guide 301 is defined as a separate component attached to substrate 110. Therefore, it should be understood that in the exemplary embodiment of laser module 100C, laser source 102, light guide 105, light orchestration module 107, light guide 301, and optical amplification module 303 are physically separate components. It should be understood that, in various embodiments, light guide 301 can be attached/mounted to substrate 110 using virtually any known electronic packaging process. Furthermore, in some embodiments, light guide 301 is configured as a non-electronic component, such as a passive component, and can be attached/mounted to substrate 110 using techniques that do not involve establishing electrical contact between light guide 301 and substrate 110, such as using epoxy or other types of adhesive materials. In some embodiments, light guide 301 may be integrated into a PLC on a chip that includes other components besides light guide 301, rather than being defined as a separate component. In some embodiments, two or more of laser source 102, light guide 105, optical orchestration module 107, light guide 301, and optical amplification module 303 may be implemented within the same PLC.

FIG3B shows a side view of a laser module 100C according to certain embodiments of the present invention, wherein light guide 105 and light guide 301 are present. In the embodiment of FIG3B , laser source 102, optical arrangement module 107, and optical amplifier module 303 are arranged on substrate 110 in a substantially coplanar manner, such that optical output interfaces 104-1 to 104-N of laser source 102 are horizontally aligned with optical input interfaces 108-1 to 108-N of optical arrangement module 107, respectively, and optical output interfaces 109-1 to 109-M of optical arrangement module 107 are horizontally aligned with optical input interfaces 304-1 to 304-M of optical amplifier module 303, respectively. In this way, in the exemplary embodiment of FIG. 3B , there is no need to rotate the laser beam at the optical output interfaces 104-1 to 104-N of the laser source 102, or at the optical input interfaces 108-1 to 108-N of the optical orchestration module 107, or at the optical output interfaces 109-1 to 109-M of the optical orchestration module 107, or at the optical input interfaces 304-1 to 304-M of the optical amplification module 303.

FIG3C shows a side view of a laser module 100C according to certain embodiments of the present invention, wherein light guide 105 is present and light guide 301 is absent. In the embodiment of FIG3C , laser source 102, optical arrangement module 107, and optical amplifier module 303 are disposed on substrate 110 in a substantially coplanar manner, such that optical output interfaces 104-1 to 104-N of laser source 102 are horizontally aligned with optical input interfaces 108-1 to 108-N of optical arrangement module 107, respectively, and optical output interfaces 109-1 to 109-M of optical arrangement module 107 are horizontally aligned with optical input interfaces 304-1 to 304-M of optical amplifier module 303, respectively. In this way, in the exemplary embodiment of FIG3C , no laser beam rotation is required at the optical output interfaces 104-1 to 104-N of the laser source 102, at the optical input interfaces 108-1 to 108-N of the optical orchestration module 107, at the optical output interfaces 109-1 to 109-M of the optical orchestration module 107, or at the optical input interfaces 304-1 to 304-M of the optical amplification module 303. In the embodiment of FIG3C , an empty space exists between the optical output interfaces 109-1 to 109-M of the optical orchestration module 107 and the optical input interfaces 304-1 to 304-M of the optical amplification module 303. Therefore, in the embodiment of FIG3C , the multi-wavelength laser outputs MWL-1 to MWL-M traverse respective straight paths through the empty space between the optical orchestration module 107 and the optical amplifier module 303. FIG3D shows a side view of the structure of the laser module 100C of FIG3C according to certain embodiments of the present invention, wherein the empty space between the optical orchestration module 107 and the optical amplifier module 103 is covered and/or sealed by a component 307. In various embodiments, component 307 can be another chip or another material provided during packaging, or can be an integral component of the laser source light guide 105 or an integral component of the optical amplifier module 303.

FIG3E shows a side view of a laser module 100C according to certain embodiments of the present invention, wherein light guide 105 is present and light guide 301 is absent, and optical arrangement module 107 and optical amplifier module 303 are arranged in a side-by-side contact configuration. In the exemplary laser module 100C structure of FIG3E , optical arrangement module 107 and optical amplifier module 303 are disposed on substrate 110 in a substantially coplanar manner, such that optical output interfaces 109-1 to 109-M of optical arrangement module 107 are horizontally aligned with optical input interfaces 304-1 to 304-M of optical amplifier module 303, respectively. This eliminates the need for laser beam rotation at optical output interfaces 109-1 to 109-M of optical arrangement module 107 or at optical input interfaces 304-1 to 304-M of optical amplifier module 303.

FIG3F shows a side view of a laser module 100C according to certain embodiments of the present invention, wherein light guide 301 is absent and light-orchestrating module 107 and optical amplification module 303 are arranged in a vertically overlapping contact configuration. In the exemplary laser module 100C structure of FIG3F , substrate 110 is used to support each of laser source 102, light guide 105, light-orchestrating module 107, and optical amplification module 303. In the exemplary laser module 100C structure of Figure 3F , the optical output interfaces 109-1 through 109-M of the optical arrangement module 107 are vertically aligned with the optical input interfaces 304-1 through 304-M of the optical amplification module 303, respectively. This allows for rotation of the laser beam at the optical output interfaces 109-1 through 109-M of the optical arrangement module 107 and at the optical input interfaces 304-1 through 304-M of the optical amplification module 303.

FIG3G shows a side view of the structure of the laser module 100C of FIG3F according to certain embodiments of the present invention, in which the optical amplifier module 303 extends across the optical orchestration module 107, the light guide 105, and the laser source 102, so that the optical amplifier module 303 provides physical support for each of the optical orchestration module 107, the light guide 105, and the laser source 102 within the laser module 100C. In the exemplary laser module 100C structure of FIG3G , if the optical amplifier module 303 is formed with sufficient mechanical strength to physically support itself and each of the optical orchestration module 107, the light guide 105, and the laser source 102, the substrate 110 may be omitted.

FIG3H shows a side view of a modification of the structure of the laser module 100C of FIG3B according to certain embodiments of the present invention, wherein the light guide 105 is absent. In this manner, the structure of the laser module 100C of FIG3H represents a modification of the laser module 100C of FIG3B to have features associated with the laser module 100A of FIG1C described above, which lacks the light guide 105.

FIG3I shows a side view of a modification of the structure of the laser module 100C of FIG3C according to certain embodiments of the present invention, wherein the light guide 105 is absent. In this manner, the structure of the laser module 100C of FIG3I represents a modification of the laser module 100C of FIG3C to have features associated with the laser module 100A of FIG1C described above, which lacks the light guide 105.

FIG3J shows a side view of a modification of the structure of the laser module 100C of FIG3E according to certain embodiments of the present invention, wherein the light guide 105 is absent. In this manner, the structure of the laser module 100C of FIG3J represents a modification of the laser module 100C of FIG3E to have features associated with the laser module 100A of FIG1C described above, which lacks the light guide 105.

FIG3K shows a side view of a modification of the structure of the laser module 100C of FIG3F according to certain embodiments of the present invention, wherein the light guide 105 is absent. In this manner, the structure of the laser module 100C of FIG3K represents a modification of the laser module 100C of FIG3F to have features associated with the laser module 100A of FIG1C described above, which lacks the light guide 105.

FIG3L shows a side view of a modification of the structure of the laser module 100C of FIG3G according to certain embodiments of the present invention, wherein the light guide 105 is absent. In this manner, the structure of the laser module 100C of FIG3L represents a modification of the laser module 100C of FIG3G to have features associated with the laser module 100A of FIG1C described above, which lacks the light guide 105.

FIG3M shows a side view of a modification of the structure of the laser module 100C of FIG3B according to certain embodiments of the present invention, in which the laser source 102 and the light-orchestrating module 107 are arranged in a side-by-side contact arrangement. Thus, the structure of the laser module 100C of FIG3M represents a modification of the laser module 100C of FIG3B to incorporate the features of the laser module 100A of FIG1E described above, in which the laser source 102 and the light-orchestrating module 107 are arranged in a side-by-side contact arrangement.

FIG3N shows a side view of a modification of the structure of the laser module of FIG3C according to certain embodiments of the present invention, in which the laser source 102 and the light-orchestrating module 107 are arranged in a side-by-side contact arrangement. Thus, the structure of the laser module 100C of FIG3N represents a modification of the laser module 100C of FIG3C to incorporate the features of the laser module 100A of FIG1E described above, in which the laser source 102 and the light-orchestrating module 107 are arranged in a side-by-side contact arrangement.

FIG3O shows a side view of a modification of the structure of the laser module 100C of FIG3E according to certain embodiments of the present invention, in which the laser source 102 and the light-orchestrating module 107 are arranged in a side-by-side contact arrangement. In this manner, the structure of the laser module 100C of FIG3O represents a modification of the laser module 100C of FIG3E to incorporate the features of the laser module 100A of FIG1E described above, in which the laser source 102 and the light-orchestrating module 107 are arranged in a side-by-side contact arrangement.

FIG3P shows a side view of a modification of the structure of the laser module 100C of FIG3F according to certain embodiments of the present invention, in which the laser source 102 and the light-scheduling module 107 are arranged in a side-by-side contact arrangement. Thus, the structure of the laser module 100C of FIG3P represents a modification of the laser module 100C of FIG3F to incorporate the features of the laser module 100A of FIG1E described above, in which the laser source 102 and the light-scheduling module 107 are arranged in a side-by-side contact arrangement.

FIG3Q shows a side view of a modification of the structure of the laser module 100C of FIG3G according to certain embodiments of the present invention, in which the laser source 102 and the light-orchestrating module 107 are arranged in a side-by-side contact arrangement. In this manner, the structure of the laser module 100C of FIG3Q represents a modification of the laser module 100C of FIG3G to incorporate the features of the laser module 100A of FIG1E described above, in which the laser source 102 and the light-orchestrating module 107 are arranged in a side-by-side contact arrangement.

FIG3R shows a side view of a modification of the structure of the laser module 100C of FIG3B according to certain embodiments of the present invention, in which the laser source 102 and the light-scheduling module 107 are arranged in vertically overlapping contact. In this manner, the structure of the laser module 100C of FIG3R represents a modification of the laser module 100C of FIG3B to incorporate the features of the laser module 100A of FIG1F described above, in which the laser source 102 and the light-scheduling module 107 are arranged in vertically overlapping contact.

FIG3S shows a side view of a modification of the structure of laser module 100C of FIG3R according to certain embodiments of the present invention, in which light orchestration module 107 extends across laser source 102, light guide 301, and optical amplifier module 303. In the structure of laser module 100C of FIG3S , light orchestration module 107 provides physical support for the laser source 102, light guide 301, and optical amplifier module 303. In the exemplary laser module 100C structure of FIG1S , substrate 110 may be omitted if light orchestration module 107 is formed with sufficient mechanical strength to physically support itself and each of laser source 102, light guide 301, and optical amplifier module 303.

FIG3T shows a side view of a modification of the structure of the laser module 300C of FIG3R according to certain embodiments of the present invention, wherein the light guide 301 is absent. In this manner, the structure of the laser module 100C of FIG3T represents a modification of the laser module 100C of FIG3R to have features associated with the laser module 100A of FIG3C described above, which lacks the light guide 301.

FIG3U shows a side view of a modification of the structure of the laser module 100C of FIG3S according to certain embodiments of the present invention, wherein the light guide 301 is absent. In this manner, the structure of the laser module 100C of FIG3U represents a modification of the laser module 100C of FIG3S to have features associated with the laser module 100A of FIG3C described above, which lacks the light guide 301.

FIG3V shows a side view of a modification of the structure of the laser module 100C of FIG3T according to certain embodiments of the present invention, wherein the light guide 301 is absent and the light-orchestrating module 107 and the optical amplifier module 303 are arranged in a side-by-side contact arrangement. In this manner, the structure of the laser module 100C of FIG3V represents a modification of the laser module 100C of FIG3T to incorporate the aforementioned features of the laser module 100A of FIG3E , such as the absence of the light guide 301 and the side-by-side contact arrangement of the light-orchestrating module 107 and the optical amplifier module 303.

FIG3W shows a side view of a modification of the structure of the laser module 100C of FIG3S according to certain embodiments of the present invention, wherein the light guide 301 is absent and the light-orchestrating module 107 and the optical amplifier module 303 are arranged in a side-by-side contact arrangement. In this manner, the structure of the laser module 100C of FIG3W represents a modification of the laser module 100C of FIG3S to incorporate the aforementioned features of the laser module 100A of FIG3E , such as the absence of the light guide 301 and the side-by-side contact arrangement of the light-orchestrating module 107 and the optical amplifier module 303.

FIG3X shows a side view of a modification of the structure of the laser module 100C of FIG3R according to certain embodiments of the present invention, wherein the light guide 301 is absent and the light-orchestrating module 107 and the optical amplifying module 303 are arranged in vertically overlapping contact. In this manner, the structure of the laser module 100C of FIG3X represents a modification of the laser module 100C of FIG3R to incorporate the aforementioned features of the laser module 100A of FIG3F , such as the absence of the light guide 301 and the arrangement of the light-orchestrating module 107 and the optical amplifying module 303 in vertically overlapping contact.

FIG3Y shows a side view of a modification of the structure of the laser module 100C of FIG3X according to certain embodiments of the present invention, in which the light orchestration module 107 extends across the laser source 102 and the optical amplifier module 303 so that the light orchestration module 107 provides physical support for each of the laser source 102 and the optical amplifier module 303 within the laser module 100C. In the exemplary laser module 100C structure of FIG3Y , the substrate 110 may be omitted if the light orchestration module 107 is formed with sufficient mechanical strength to physically support itself and each of the laser source 102 and the optical amplifier module 303.

Figure 4A illustrates the structure of a laser module 100D according to certain embodiments of the present invention. Laser module 100D includes a laser source 102A and a light orchestration module 107A implemented within the same PLC 200 as described in Figure 2A . Laser module 100D also includes a light guide 301 and an optical amplifier module 303 as described in Figure 3A . In certain embodiments, PLC 200, light guide 301, and optical amplifier module 303 are disposed on substrate 110. It should be understood that the laser module 100D is configured to direct the plurality of multi-wavelength laser outputs MWL-1 to MWL-M from the optical output interfaces 109-1 to 109-M of the optical orchestration module 107A within the PLC 200 to the corresponding plurality of optical input interfaces 304-1 to 304-M of the optical amplifier module 303, respectively.

FIG4B shows a side view of the structure of the laser module 100D of FIG4A according to certain embodiments of the present invention. In the structure of the laser module 100D of FIG4B , the PLC 200 and the optical amplifier module 303 are disposed on the substrate 110 in a substantially coplanar manner so that the optical output interfaces 109-1 to 109-M of the optical arrangement module 107A are horizontally aligned with the optical input interfaces 304-1 to 304-M of the optical amplifier module 303, respectively. This eliminates the need to rotate the laser beam at the optical output interfaces 109-1 to 109-M of the optical arrangement module 107A or at the optical input interfaces 304-1 to 304-M of the optical amplifier module 303.

FIG4C shows a side view of the laser module 100D of FIG4B according to certain embodiments of the present invention, wherein the light guide 301 is absent. In the embodiment of FIG4C , the PLC 200 and the optical amplifier module 303 are arranged on the substrate 110 in a substantially coplanar manner so that the optical output interfaces 109-1 to 109-M of the optical arrangement module 107A are horizontally aligned with the optical input interfaces 304-1 to 304-M of the optical amplifier module 303, respectively. This eliminates the need to rotate the laser beam at the optical output interfaces 109-1 to 109-M of the optical arrangement module 107A or at the optical input interfaces 304-1 to 304-M of the optical amplifier module 303. In the embodiment of FIG4C , an empty space exists between the optical output interfaces 109-1 to 109-M of the optical orchestration module 107A and the optical input interfaces 304-1 to 304-M of the optical amplifier module 303. Therefore, in the embodiment of FIG4C , the laser beams output from the PLC 200 travel along respective straight paths through the empty space between the PLC 200 and the optical amplifier module 303. FIG4D shows a side view of the structure of the laser module 100D of FIG4C according to certain embodiments of the present invention, in which the empty space between the PLC 200 and the optical amplifier module 303 is covered and/or sealed by a component 401. In various embodiments, component 401 may be another chip or material incorporated during packaging, or may be an integrated component of PLC 200 or optical amplifier module 303.

Figure 4E shows a side view of the laser module 100D of Figure 4A according to certain embodiments of the present invention, wherein light guide 301 is absent and PLC 200 and optical amplifier module 303 are arranged in a side-by-side contact configuration. In the embodiment of Figure 4E , PLC 200 and optical amplifier module 303 are disposed on substrate 110 in a substantially coplanar manner such that the optical output interfaces 109-1 to 109-M of optical orchestration module 107A are horizontally aligned with the optical input interfaces 304-1 to 304-M of optical amplifier module 303, respectively. This eliminates the need for laser beam rotation at the optical output interfaces 109-1 to 109-M of optical orchestration module 107A or at the optical input interfaces 304-1 to 304-M of optical amplifier module 303.

FIG5A illustrates a block diagram of a laser module 100E according to certain embodiments of the present invention, wherein optical orchestration module 107B and optical amplifier module 303A are implemented together in the same PLC 503. The functions of optical orchestration module 107B are substantially the same as those of optical orchestration module 107 described above for laser module 100A. The functions of optical amplifier module 303A are substantially the same as those of optical amplifier module 303 described above for laser module 100C. In PLC 503, optical orchestration module 107B and optical amplifier module 303A are integrated with each other, allowing the multiple multi-wavelength laser outputs MWL-1 to MWL-M provided by optical orchestration module 107B to be directed into optical amplifier module 303A without passing through an optical output interface and an optical input interface (represented by lines 501-1 to 501-M, respectively). Furthermore, in PLC 503, the optical integration between optical orchestration module 107B and optical amplifier module 303A eliminates the need for a separate light guide 301. In certain embodiments of laser module 100E, laser source 102, light guide 105, and PLC 503 are disposed on substrate 110. It should be understood that the laser module 100E is configured so that the plurality of laser beams from the optical output interfaces 104-1 to 104-N of the laser source 102 are directed to corresponding ones of the plurality of optical input interfaces 108-1 to 108-NB of the optical arrangement module 107 within the PLC 503.

FIG5B shows a side view of the structure of the laser module 100E of FIG5A according to certain embodiments of the present invention. In the structure of the laser module 100E of FIG5B , the PLC 503 and the laser source 102 are disposed on the substrate 110 in a substantially coplanar manner so that the optical output interfaces 104-1 to 104-N of the laser source 102 are horizontally aligned with the optical input interfaces 108-1 to 108-N of the optical orchestration module 107B, respectively. This eliminates the need to rotate the laser beam at the optical output interfaces 104-1 to 104-N of the laser source 102 or at the optical input interfaces 108-1 to 108-N of the optical orchestration module 107B.

FIG5C shows a side view of the structure of laser module 100E of FIG5B according to certain embodiments of the present invention, wherein light guide 105 is absent. In the embodiment of FIG5C , PLC 503 and laser source 102 are disposed on substrate 110 in a substantially coplanar manner such that optical output interfaces 104-1 to 104-N of laser source 102 are horizontally aligned with optical input interfaces 108-1 to 108-N of optical orchestration module 107B, respectively. This eliminates the need for laser beam rotation at optical output interfaces 104-1 to 104-N of laser source 102 or optical input interfaces 108-1 to 108-N of optical orchestration module 107. In the embodiment of FIG5C , an empty space exists between the optical output interfaces 104-1 to 104-N of the laser source 102 and the optical input interfaces 108-1 to 108-N of the optical orchestration module 107. Therefore, in the embodiment of FIG5C , the laser beams output from the laser source 102 travel along respective straight paths through the empty space between the laser source 102 and the PLC 503. FIG5D shows a side view of the structure of the laser module 100E of FIG5C , according to certain embodiments of the present invention, in which the empty space between the laser source 102 and the PLC 503 is covered and/or sealed by a member 505. In various embodiments, component 505 may be another chip provided during packaging, or another material provided during packaging, or may be an integral component of PLC 503, or may be an integral component of laser source 102.

Figure 5E shows a side view of a laser module 100E according to certain embodiments of the present invention, wherein the light guide 105 is absent and the laser source 102 and the PLC 503 are arranged in a side-by-side contact configuration. In the embodiment of Figure 5E , the laser source 102 and the PLC 503 are disposed on the substrate 110 in a substantially coplanar manner, such that the optical output interfaces 104-1 to 104-N of the laser source 102 are horizontally aligned with the optical input interfaces 108-1 to 108-N of the optical orchestration module 107B, respectively. This eliminates the need for laser beam rotation at the optical output interfaces 104-1 to 104-N of the laser source 102 or at the optical input interfaces 108-1 to 108-N of the optical orchestration module 107.

FIG6A illustrates a block diagram of a laser module 100F according to certain embodiments of the present invention, wherein a laser source 102A, an optical orchestration module 107C, and an amplifier module 303A are implemented together in a common PLC 601. The functionality of the laser source 102A is substantially the same as that of the laser source 102 described above for the laser module 100A. The functionality of the optical orchestration module 107C is substantially the same as that of the optical orchestration module 107 described above for the laser module 100A. The functionality of the optical amplifier module 303A is substantially the same as that of the optical amplifier module 303 described above for the laser module 100C. In PLC 601, laser source 102A and optical orchestration module 107C are integrated with each other, allowing laser beams 201-1 to 201-N generated by multiple lasers 103-1 to 103-N to be guided into optical orchestration module 107C without having to pass through optical output and input interfaces, respectively. Furthermore, in PLC 601, due to the optical integration between laser source 102A and optical orchestration module 107C, a separate light guide 105 is not required. Furthermore, in PLC 601, optical orchestration module 107C and optical amplifier module 303A are integrated with each other, allowing the multiple multi-wavelength laser outputs MWL-1 to MWL-M provided by optical orchestration module 107C to be directed into optical amplifier module 303A without passing through an optical output interface and an optical input interface (represented by lines 501-1 to 501-M, respectively). Furthermore, in PLC 601, due to the optical integration between optical orchestration module 107C and optical amplifier module 303A, a separate light guide 301 is not required. Figure 6B shows a side view of the structure of laser module 100F of Figure 6A according to certain embodiments of the present invention.

It should be understood that the geometric diagrams of each of the laser source 102/102A, light guide 105/301, optical orchestration module 107/107A/107B/107C, and optical amplifier module 303/303A disclosed herein are provided for illustrative purposes to simply illustrate the present invention. In various embodiments, each of the laser source 102/102A, light guide 105/301, optical orchestration module 107/107A/107B/107C, and optical amplifier module 303/303A can have substantially any geometric shape required to form an optoelectronic device of a desired shape and size. In some embodiments, one or more of the laser sources 102/102A, light guides 105/301, optical orchestration modules 107/107A/107B/107C, and optical amplification modules 303/303A may be configured to have a substantially planar geometry. In some embodiments, one or more of the laser sources 102/102A, light guides 105/301, optical orchestration modules 107/107A/107B/107C, and optical amplification modules 303/303A may be configured to have a three-dimensionally varying geometry, i.e., a shape other than a simple rectangular prism. Furthermore, it should be understood that in various embodiments, each of the laser source 102/102A, the light guide 105/301, the optical orchestration module 107/107A/107B/107C, and the optical amplification module 303/303A may have different measurable dimensions in any reference direction of the associated coordinate system, i.e., in the x-, y-, and z-directions of the Cartesian coordinate system.

FIG7 illustrates an exemplary embodiment of an optical orchestration module 107 / 107A / 107B / 107C according to certain embodiments of the present invention, comprising an Nx1 (polarization-maintaining) wavelength combiner 701 and a 1xM (polarization-maintaining) broadband power divider 705. Wavelength combiner 701 is configured to combine multiple laser beams received at optical input interfaces 108-1 to 108-N into a multi-wavelength laser beam. The multi-wavelength laser beam is then transmitted from wavelength combiner 701 to broadband power divider 705 via optical waveguide 703. The broadband power divider 705 is used to distribute multiple portions of the total power of the multi-wavelength laser beam to each of the multiple optical output interfaces 109-1 to 109-M of the optical orchestration module 107/107A/107B/107C.

FIG8 illustrates an exemplary embodiment of an optical orchestration module 107/107A/107B/107C according to certain embodiments of the present invention, comprising an array of waveguides 801 and a broadband power divider 805. In the example of FIG8 , the array of waveguides 801 is a 16-to-1 array of waveguides. However, it should be understood that, in various embodiments, the array of waveguides 801 can be configured to receive any number (N) of optical inputs. Furthermore, in the example of FIG8 , the broadband power divider 805 is a 16-to-16 broadband power divider. However, it should be understood that, in various embodiments, the broadband power divider 805 can be configured to output any number (M) of optical outputs. Waveguide array 801 is used to combine multiple laser beams received at optical input interfaces 108-1 to 108-16 into a multi-wavelength laser beam. The multi-wavelength laser beam is then transmitted from waveguide array 801 via optical guide 803 to broadband power divider 805. Broadband power divider 805 distributes multiple portions of the total power of the multi-wavelength laser beam to each of the multiple optical output interfaces 109-1 to 109-16 of optical orchestration modules 107/107A/107B/107C.

FIG9 shows an exemplary embodiment of an optical orchestration module 107/107A/107B/107C according to certain embodiments of the present invention, which includes a step grating 901 and a broadband power divider 905. In the example of FIG8 , the step grating 901 is a 16-to-1 grating. However, it should be understood that in various embodiments, the step grating 901 can be used to receive any number (N) of optical inputs. Furthermore, in the example of FIG9 , the broadband power divider 905 is a 1-to-16 broadband power divider. However, it should be understood that in various embodiments, the broadband power divider 905 can be used to output any number (M) of optical outputs. Step grating 901 is used to combine multiple laser beams received at optical input interfaces 108-1 to 108-16 into a multi-wavelength laser beam. The multi-wavelength laser beam is transmitted from step grating 901 via light guide 903 to broadband power divider 905. Broadband power divider 905 is used to distribute multiple portions of the total power of the multi-wavelength laser beam to each of the multiple optical output interfaces 109-1 to 109-16 of optical orchestration modules 107/107A/107B/107C.

FIG10 illustrates an exemplary embodiment of an optical orchestration module 107/107A/107B/107C according to certain embodiments of the present invention, which includes a butterfly waveguide network 1001. In the example of FIG10 , butterfly waveguide network 1001 is a 16-input, 16-output network. However, it should be understood that in various embodiments, butterfly waveguide network 1001 can be configured to receive any number (N) of optical inputs and provide any number (M) of optical outputs. Butterfly waveguide network 1001 is configured to receive (N) laser beams from optical input interfaces 108-1 through 108-N and distribute multiple portions of each of the (N) laser beams to each of the (M) optical output interfaces of optical orchestration module 107/107A/107B/107C.

FIG11 illustrates an exemplary embodiment of an optical orchestration module 107/107A/107B/107C according to certain embodiments of the present invention, which includes a star coupler 1101. In the example of FIG11 , star coupler 1101 is a 16-input to 16-output star coupler. However, it should be understood that in various embodiments, star coupler 1101 can be configured to receive any number (N) of optical inputs and provide any number (M) of optical outputs. Star coupler 1101 is configured to receive (N) laser beams from optical input interfaces 108-1 through 108-N and distribute multiple portions of each of the (N) laser beams to each of the (M) optical output interfaces of optical orchestration module 107/107A/107B/107C.

FIG12A illustrates an exemplary embodiment of an optical orchestration module 107/107A/107B/107C according to certain embodiments of the present invention, which includes a resonant ring array 1201. In the example of FIG12A , the resonant ring array 1201 is a 16-input to 16-output resonant ring array. However, it should be understood that in various embodiments, the resonant ring array 1201 can be configured to receive any number (N) of optical inputs and provide any number (M) of optical outputs. The resonant ring array 1201 is used to receive (N) laser beams from the optical input interfaces 108-1 to 108-N and distribute multiple portions of each of the (N) laser beams to each of the (M) optical output interfaces of the optical orchestration modules 107/107A/107B/107C.

FIG12B shows a detailed diagram of a resonant ring array 1201 according to the present invention. Resonant ring array 1201 includes a plurality of resonant ring arrays _R1 through _RN , whose number is equal to the number (N) of the plurality of laser beams received at the (N) optical input interfaces 108-1 through 108-N, respectively. Each resonant ring array _R1 through _RN includes a plurality of resonant rings 1203, whose number is equal to the number (M) of the plurality of optical output interfaces 109-1 through 109-M of the optical orchestration module 107/107A/107B/107C. Each resonant ring array _R1 through _RN is configured to receive a different one of the plurality of laser beams as a corresponding input laser beam. Therefore, each resonant ring array _R1 through _RN receives a different wavelength among the (N) wavelengths (λ1-λN) of the laser beam received by the laser source 102/102A. Furthermore, for this reason, each resonant ring 1203 in a particular resonant ring array _R1 through _RN can be optimized for operation with the specific laser beam wavelength that the particular resonant ring array is intended to receive. Furthermore, the resonant rings 1203 in different resonant ring arrays _R1 through _RN can be optimized for operation with different laser beam wavelengths. Each resonant ring 1203 in a particular resonant ring array _R1 to _RN is used to redirect a portion of the corresponding input laser beam of the particular resonant ring array to a different one of the plurality of optical output interfaces 109-1 to 109-M of the optical orchestration module 107/107A/107B/107C (as indicated by arrow 1205). In some embodiments, the resonant rings 1203 of a particular resonant ring array _R1 to _RN are configured to sequentially receive the input laser beam corresponding to the particular resonant ring array. The resonant rings 1203 disposed sequentially relative to the particular resonant ring array of the laser source 102/102A are configured to progressively redirect a larger portion of the input laser beam corresponding to the particular resonant ring array. In this manner, the resonant rings 1203 of a particular resonant ring array _R1 to _RN provide substantially the same amount of laser light to each of the optical output interfaces 109-1 to 109-M of the optical orchestration modules 107/107A/107B/107C.

FIG13 illustrates an exemplary embodiment of a laser module 100F on a PLC 601 according to certain embodiments of the present invention, wherein an arrangement module 107C is employed to include an array of waveguides 801 and a broadband power divider 805. FIG14 illustrates an exemplary embodiment of a laser module 100F on a PLC 601 according to certain embodiments of the present invention, wherein an arrangement module 107C is employed to include a step grating 901 and a broadband power divider 905. FIG15 illustrates an exemplary embodiment of a laser module 100F on a PLC 601 according to certain embodiments of the present invention, wherein an arrangement module 107C is employed to include a butterfly waveguide network 1001. FIG16 shows an exemplary embodiment of a laser module 100F on a PLC 601 according to certain embodiments of the present invention, wherein an arrangement module 107C is implemented to include a star coupler 1101.

FIG17 is a flow chart illustrating a method for operating a laser module 100A-100F according to certain embodiments of the present invention. The method includes operation 1701, operating a laser source to generate and output a plurality of laser beams, wherein the plurality of laser beams have different wavelengths relative to each other. The different wavelengths of the plurality of laser beams are recognizable to the optical data communication system. The method also includes operation 1703, distributing a portion of each of the plurality of laser beams to each of the plurality of optical output interfaces of the laser module 100A-100F. Operation 1703 is performed so that all different wavelengths of the plurality of laser beams are provided to each of the plurality of optical output interfaces of the laser module 100A-100F. In certain embodiments, the method optionally includes operation 1705, amplifying the laser light distributed to the plurality of optical output interfaces of the laser module 100A-100F. In some embodiments, operation 1701 is performed by laser source 102/102A, operation 1703 is performed by optical orchestration module 107/107A/107B/107C, and operation 1705 is performed by optical amplifier module 303/303A. In some embodiments, any two or more of laser source 102/102A, optical orchestration module 107/107A/107B/107C, and optical amplifier module 303/303A operate as physically separate components. Furthermore, in some embodiments, any two or more of laser source 102/102A, optical orchestration module 107/107A/107B/107C, and optical amplifier module 303/303A are disposed on a common substrate 110 and/or within the same PLC.

In some embodiments, the method includes directing a plurality of laser beams from laser source 102/102A into light orchestration module 107/107A/107B/107C. In some embodiments, the plurality of laser beams are directed from laser source 102/102A through an empty space and from the empty space into light orchestration module 107/107A/107B/107C. In some embodiments, the method includes transmitting the plurality of laser beams through light guide 105 to direct the plurality of laser beams from laser source 102/102A into light orchestration module 107/107A/107B/107C. In some embodiments, the method includes transmitting the plurality of laser beams through one or more optical vertical coupling devices to direct the plurality of laser beams from the laser source 102/102A to the optical orchestration module 107/107A/107B/107C. In some embodiments, the method includes maintaining polarization of the plurality of laser beams as the plurality of portions of the plurality of laser beams are distributed to each of the plurality of optical output interfaces of the laser modules 100A-100F.

In some embodiments, each of the plurality of laser beams is generated using a respective distributed feedback laser. In some embodiments, the method includes controlling the temperature of the different distributed feedback lasers to provide substantial uniformity of temperature-dependent wavelength shifts across the different distributed feedback lasers. Furthermore, in some embodiments, the method includes controlling the allocation of a portion of each of the plurality of laser beams to each of the plurality of optical output interfaces of the laser modules 100A-100F so that each of the plurality of optical output interfaces receives a similar amount of optical power within a specific multiple of the plurality of laser beams. In some embodiments, the specific multiple is five times. In some embodiments, the specific multiple is one, two, three, four, six, or any multiple in between.

It should be further understood that the present invention also encompasses methods for fabricating each of the laser modules 100A-100F disclosed herein. Furthermore, these methods for fabricating the laser modules 100A-100F may include substantially any known and established processes and/or techniques for fabricating semiconductor devices and for fabricating components/substrates interfacing with one or more semiconductor devices.

In some embodiments, laser modules 100A-100F are designed to provide laser light having one or more wavelengths. The laser modules 100A-100F can be arranged into several main components, including: a laser source 102/102A, comprising a plurality of lasers such as laser diodes, each laser generating a subset of the plurality of wavelengths output by the laser source 102/102A; an optical arrangement module 107/107A/107B/107C, which provides a combiner, coupler, and/or splitter network (CCSN) whose input is the output wavelength from the laser source 102/102A; an optical amplifier module 303/303A, comprising a plurality of optical amplifiers, which operate to increase the amount of optical power output by the laser modules 100A-100F, but possibly at the expense of signal-to-noise ratio; an optical fiber coupling array connected to carry light out of the laser modules 100A-100F; and a light guide 100. 5. 301 (which may include couplers, reflective surfaces and/or lenses) to guide, collimate and/or couple light to/from the optical arrangement module 107/107A/107B/107C, from the laser source 102/102A, to/from the fiber coupling array, and to/from the optical amplifier module 303/303A; a heat dissipation element such as a thermally conductive substrate to dissipate heat within the laser source 102/102A. All laser diodes are thermally linked together (e.g., copper is used to bond all laser diodes together) to minimize temperature differences between the laser diodes. In some embodiments, the thermal dissipation element can be the same substrate 110 on which the laser sources 102/102A, optical orchestration modules 107/107A/107B/107C, and optical amplifier modules 303/303A are constructed and/or attached.

In various embodiments, optical orchestration modules 107/107A/107B/107C can be implemented in a number of ways, including using discrete components or as an integrated device such as a planar lightwave circuit (PLC). Various embodiments of optical orchestration modules 107/107A/107B/107C may include the following features: a PLC structure that provides the advantage of maintaining polarization of light propagating through optical orchestration modules 107/107A/107B/107C.

A PLC structure in which laser sources 102/102A and/or optical amplifier modules 303/303A can be constructed using the same substrate as optical orchestration modules 107/107A/107B/107C—where the substrate of optical orchestration modules 107/107A/107B/107C supports the construction of laser sources 102/102A (e.g., a specific III-V or IV substrate).

A PLC structure in which the laser source 102/102A and/or the optical amplifier module 303/303A can be attached to the optical orchestration module 107/107A/107B/107C by, for example, flip-chip bonding.

A PLC structure, wherein a laser source 102/102A can couple light into and out of structures within the PLC - wherein the light orchestration module 107/107A/107B/107C can include a laser cavity and/or one or more light guides of the laser source 102/102A, and output laser light is coupled from the laser cavity and/or light guides into/through a coupling device.

A PLC structure, wherein the optical amplifier module 303/303A can couple light to and from structures within the PLC. The optical orchestration module 107/107A/107B/107C can provide one or more light guides. The input and output light of the optical amplifier is coupled to and from the amplifier via suitable coupling devices, such as grating couplers, edge couplers, and gradient-coupled waveguides.

In some embodiments, a glass substrate may not have sufficient thermal conductivity to provide thermal coupling to the laser source 102/102A. In such embodiments, a glass substrate (e.g., as used in silicon photonics devices) can be used to provide thermal conductivity, provided that the low-refractive-index cladding material (buried oxide or deep trench layer) is also thermally conductive or not too thick. Alternatively, III-V substrates such as GaAs or InP also have high thermal conductivity and can similarly serve as suitable materials for thermal coupling to the laser source 102/102A.

In various embodiments, optical orchestration modules 107/107A/107B/107C can have multiple possible configurations, including, among other things, that optical orchestration modules 107/107A/107B/107C can be configured as fan-in, fan-out N-to-N symmetrical star couplers, which not only combine N wavelengths but also split the power into N parts.

Optical orchestration modules 107/107A/107B/107C can be constructed as fan-in/fan-out N-to-M asymmetric star couplers, combining N wavelengths and splitting the power into M parts.

The optical arrangement modules 107/107A/107B/107C can be constructed as N-to-N star couplers using 2x2 splitters/couplers of N/2*log ₂ N. In the most straightforward implementation, such a structure sums the number of waveguide crossings from n=1 to log ₂ N-1 in (2n-1).

Optical orchestration modules 107/107A/107B/107C can be configured as a 1-to-N splitter for reverse operation. This structure outputs 1/2N of the total laser output power and discards the remainder.

The optical orchestration module 107/107A/107B/107C can be constructed as an array of waveguides (AWG) plus a splitter.

In some embodiments, optical amplifier module 303/303A is used to increase the output power of laser modules 100C-100F. In some embodiments, optical amplifier module 303/303A may include the following features: The optical amplifier may have various forms, such as, in particular, a semiconductor optical amplifier, a geron/ferromagnetic doped fiber amplifier, or a Raman amplifier.

Optical amplifiers can be used to amplify input light of a single wavelength or multiple wavelengths.

When amplifying multiple wavelengths, each optical amplifier can have sufficient optical bandwidth to amplify all input wavelengths.

If the wavelength bandwidth is sufficient to exceed the bandwidth of a single optical amplifier, multiple optical amplifiers can be used to amplify all wavelengths, with each amplifier amplifying only a subset of wavelengths within its amplification bandwidth. In this case, optical amplifiers can be added at intermediate points within optical orchestration modules 107/107A/107B/107C, and the input of each amplifier can be defined to contain the subset of wavelengths amplified by that amplifier.

In some embodiments, an interposer device can be used to provide the combined functionality of substrate 110 and one or more optical components (particularly, waveguides 105 and 301 and orchestration modules 107, 107A, 107B, and 107C). In some embodiments, the interposer device is implemented within an integrated silicon photonics device and/or a III-V photonics-enabled multi-chip module (MCM), a system-in-package (SiP), or a heterogeneous integrated product. FIG18A illustrates an exemplary interposer device 1801 according to some embodiments of the present invention, in which the functionality of substrate 110 and waveguides 105 and 301 is combined. In the example of FIG18A, interposer device 1801 performs the functions of substrate 110 and includes waveguides 105 and 301. Laser source 102 interfaces with interposer device 1801. Furthermore, the optical amplifier module 303 interfaces with the insert device 1801.

Silicon photonics die/chip 1803 also interfaces with interposer device 1801. In some embodiments, another device capable of performing the same function as silicon photonics die/chip 1803 may replace silicon photonics die/chip 1803. In some embodiments, silicon photonics die/chip 1803 is configured to have optical interfaces on more than one side. Furthermore, silicon photonics die/chip 1803 may be configured to have optical interfaces on any combination of multiple sides. However, in some embodiments, silicon photonics die/chip 1803 is configured to have an optical interface on only one side. In some embodiments, silicon photonics die/chip 1803 is a CMOS driver die, and the required silicon photonic devices are formed within interposer device 1801. In these embodiments, the silicon photonics die/chip 1803 is used as a CMOS driver chip to drive/interface the silicon photonics device formed within the interposer device 1801.

In some embodiments, interposer device 1801 combines local metal routing and through-silicon vias (TSVs) with photonic components. It should also be understood that interposer device 1801 includes light guides that can enable the creation of various optical devices within interposer device 1801, such as optical couplers, optical splitters, light guides, optical array waveguides (AWGs), and optical star couplers. For example, referring to FIG. 3A , in some embodiments, waveguides 105 and 301 and substrate 110 can be integrated together within the same interposer device and formed using the same components, materials, and manufacturing processes. It should also be understood that essentially any one or more optical devices or their components (or components) may be integrated with substrate 110 to form an interposer device. For example, referring to FIG. 3A , in some embodiments, light guide 105 may be integrated with substrate 110 within an interposer device, where light guide 301 is configured as a separate structure that interfaces with the interposer device.

In some embodiments, interposer device 1801 may include a silicon photonics die/chip 1803 in addition to substrate 110 and one or more of waveguides 105 and 301. For example, in some embodiments, interposer device 1801 may be configured as a large silicon photonics die/chip 1803 containing one or more lightguides or other types of optical devices. In some embodiments, waveguides 105 and 301, substrate 110, and silicon photonics die/chip 1803 may be formed within the same interposer device and may utilize the same components, materials, and manufacturing processes. In various embodiments, the interposer device may be fabricated from silicon, glass, and/or other suitable optoelectronic device materials. In some embodiments, the light guide structure may be formed within the interposer device using silicon, oxide(s), polymer(s), silicon nitride(s), and/or any other material suitable for forming a light guide.

FIG18B shows a top view of an interposer device 1801 according to certain embodiments of the present invention to illustrate the flexibility of positioning dies/chips 1805A-1805D relative to the interposer device 1801. Dies/chips 1805A-1805D can be any electronic and/or optoelectronic devices. It should be understood that four dies/chips 1805A-1805D are shown as an illustrative example. In various embodiments, one or more dies/chips (e.g., 1805A-1805D) can be positioned substantially anywhere within the interposer device 1801 in substantially any desired configuration. It should also be understood that multiple dies/chips (e.g., 1805A-1805D) can be positioned on the interposer device if desired. In some embodiments, multiple dies/chips (e.g., 1805A-1805D) are disposed on an interposer device in a substantially symmetrical configuration within the total area of the interposer device. However, it should be understood that in some embodiments, multiple dies/chips (e.g., 1805A-1805D) are disposed on an interposer device in an asymmetrical configuration within the total area of the interposer device.

Interposer devices such as 1801 may include locally routed metal structures and/or through-glass vias (TGVs) as needed to provide electrical connections between the die/chip(s) and/or other electronic devices interfacing with the interposer device. In some embodiments, the die/chip(s) may be attached to the interposer device using flip-chip bonding and/or bond bonding and/or virtually any other type of die/chip connection technology to electrically connect the die/chip(s) to conductive structures within the interposer device. Furthermore, in various embodiments, the interposer device interfacing with light-guiding structures within the die/chip(s) may be edge-coupled (tail-coupled) and/or vertically coupled to optical structures within the interposer device.

FIG19 shows a planar block diagram of an insert device 1801A according to certain embodiments of the present invention, as part of an integrated MCM product. Insert device 1801A includes electronic features/structures and optical features/structures. In various embodiments, insert device 1801A may be formed from, among other materials, silicon, glass, ceramic, epoxy composite(s), polymer(s), and combinations thereof. Insert device 1801A functions as both an optical mount and an electrical insert and includes/supports an integrated photonic component, such as a star coupler 1101. It should be understood that star coupler 1101 is shown in FIG19 by way of example. In various embodiments, the star coupler 1101 of FIG. 19 can be replaced by any other suitable type of photonic device, such as one or more of a butterfly network of optical splitters, a step grating, and/or any other suitable photonic circuit, such as the photonic circuits described herein with respect to the orchestration modules 107, 107A, 107B, and 107C.

Furthermore, interposer device 1801A enables flip-chip and/or wire-bonding connections of electronic, optical, and optoelectronic dies/chips (dies/chips). In the example of FIG. 19 , a plurality (N) of optical amplifier modules 303-1 through 303-N interface with interposer device 1801A, where N can be one or more. In some embodiments, optical amplifier modules 303-1 through 303-N are discrete dies/chips connected to interposer device 1801A via flip-chip connections, wire-bonding connections, or other types of connections. Each optical amplifier module 303-1 through 303-N includes a plurality (M) of optical amplifiers 305-1 through 305-M. In various embodiments, each optical amplifier module 303-1 to 303-N includes a separate optical amplifier 305-1 to 305-M for each light guide connected to the optical amplifier module, so that each optical signal for data reception is amplified by the corresponding optical amplifier, and each optical signal for data transmission is amplified by the corresponding optical amplifier. Each optical amplifier module 303-1 to 303-N is optically connected to a fiber-to-insert connector 1903 via a corresponding light guide 1915-1 to 1915-N. The direction of the arrows representing light guide structures 1915-1 to 1915-N indicates the direction of light propagation through light guide structures 1915-1 to 1915-N.

Furthermore, in the example of FIG. 19 , laser source 102 interfaces with interposer device 1801A. In some embodiments, laser source 102 is a discrete die/chip connected to interposer device 1801A via flip-chip connections, wire bonding connections, or other types of connections. Laser source 102 includes (N) lasers 103-1 through 103-N. Interposer device 1801A includes a light-guiding structure 1905 to guide laser light from laser source 102 to star coupler 1101 (or other photonic device). Star coupler 1101 (or other photonic device) is formed within interposer device 1801A. In other words, star coupler 1101 (or other photonic device) is a photonic device formed as part of interposer device 1801A. Interposer device 1801A also includes a light-guiding structure 1907 to guide laser light from star coupler 1101 (or other photonic device) to silicon photonic die/chip 1803. Light-guiding structures 1905 and 1907 are formed within interposer device 1801A. The direction of the arrows representing light-guiding structures 1905 and 1907 indicates the direction of light propagation through light-guiding structures 1905 and 1907. In some embodiments, silicon photonic die/chip 1803 is a discrete die/chip connected to interposer device 1801A via flip-chip connections, wire bonding connections, or other types of connections. Furthermore, silicon photonics die/chip 1803 is optically connected to each of optical amplifier modules 303-1 through 303-N via a corresponding set of light guides 1909-1 through 1909-N. The arrows representing light guide structures 1909-1 through 1909-N indicate the direction of light propagation through light guide structures 1909-1 through 1909-N. In some embodiments, interposer device 1801A may include light guide structures (e.g., 1905, 1907, 1909-1 through 1909-N, etc.) to support MCM integration products and one or more integrated isolators (plural isolators) optimized for the corresponding structural layout. In some embodiments, the integrated isolator(s) may be discrete isolators integrated into the interposer device 1801A.

The example of FIG. 19 shows a fiber-to-insert connector 1903. However, it should be understood that in some embodiments, a plurality of fiber-to-insert connectors 1903 may be provided to receive optical signals entering the insert device 1801A. In some embodiments, the configuration of the fiber-to-insert connector 1903 may include a v-groove array that aligns the optical fibers to the spot-sized converters on the insert device 1801A. However, it should be understood that in various embodiments, substantially any configuration of the fiber-to-insert connector 1903 may be used as long as the fiber-to-insert connector 1903 is capable of directing light from one or more optical fibers to one or more corresponding optical fibers within the insert device 1801A, and vice versa.

Light entering the fiber-pair interposer connector 1903 may not have controlled polarization. Furthermore, it may be more efficient to use optical amplifier modules 303-1 to 303-N that amplify in only one polarization. Therefore, a plurality of polarization rotators 1901 are provided to receive input light from the fiber-pair interposer connector region 1903 and split the input light's TE and TM polarizations into TE polarization. In various embodiments, each polarization rotator 1901 may be a discrete component bonded to the interposer device 1801A or may be integrated into the interposer device 1801A. In some embodiments, all polarization rotators 1901 are discrete components bonded to the interposer device 1801A. In some embodiments, all polarization rotators 1901 are integrated into interposer device 1801A. In some embodiments, a portion of polarization rotators 1901 is a discrete component bonded to interposer device 1801A, while a portion of polarization rotators 1901 is integrated into interposer device 1801A. Each polarization rotator 1901 is optically connected to a corresponding light guide 1911, which functions as an input waveguide, directing light from the fiber-to-interposer connector 1903 to the polarization rotator 1901. Furthermore, each polarization rotator 1901 is optically connected to two corresponding light guides 1913. Light guides 1913 function as output waveguides, guiding light from polarization rotator 1901 to one of optical amplifier modules 303-1 to 303-N. Optical amplifier modules 303-1 to 303-N amplify optical signals.

It should be understood that polarization rotator 1901, its corresponding input light guide 1911, and its two corresponding output light guides 1913 together form a set of structures repeated (y) times for each optical amplifier module 303-1 through 303-N on/within insert device 1801A. For example, consider that fiber-pair insert connector 1903 supports the connection of 12 optical fibers. Furthermore, for this example, consider that there are two optical amplifier modules 303-1 and 303-2 on/within insert device 1801A. Therefore, for this example, each of the two optical amplifier modules 303-1 and 303-2 provides service connections to six of the 12 optical fibers, or half of the optical fibers, on fiber-pair insert connector 1903. Furthermore, in this example, of the six optical fibers serving one of the two optical amplifier modules 303-1 and 303-2, three will be used for data transmission (TX) and three for data reception (RX). Therefore, in this example, there are three (y=3) polarization rotators 1901, corresponding input lightguides 1911, and corresponding output lightguides 1913 connected to serve optical amplifier module 303-1. Furthermore, in this example, there are three (y=3) polarization rotators 1901, corresponding input lightguides 1911, and output lightguides 1913 connected to serve optical amplifier module 303-2. It should be understood that the number (y) of polarization rotators 1901 optically connected to a particular one of optical amplifier modules 303-1 to 303-N can increase linearly with the number of fiber optic connectors connected to interposer device 1801A. In various embodiments, the number of fiber optic connectors connected to interposer device 1801A can be increased by duplicating fiber-to-interposer connectors 1903 and/or by increasing the number of fibers per fiber-to-interposer connector 1903.

For the fabrication of polarization rotator 1901, it is advantageous to employ low-temperature processing when forming the light-conducting structure on interposer device 1801A. In this context, low-temperature processing refers to temperatures below approximately 450°C. An exemplary polarization rotator compatible with front-end-of-line (FEOL) SOI (silicon-on-insulator) wafers is described in the following reference: "Polarization rotator-splitters and controllers in a Si 3 N 4-on-SOI integrated photonics platform," by Sacher, Wesley D., et al., Optics express 22.9 (2014): 11167-11174 (hereinafter referred to as "Sacher"), the entire contents of which are incorporated herein by reference for all purposes. However, Sacher's polarization rotator limits the application of polarization rotator-divider to FEOL and SOI interposer devices. To make Sacher's polarization rotator more versatile, the polarization rotator is implemented in the back-end of the line (BEOL) using low-temperature processing. One challenge in this approach is to use BEOL-compatible thin films. Low-temperature amorphous silicon (a-Si and/or a-Si-H) is known to be a low-loss, low-density thin film, as described in the following article: "Use of amorphous silicon for active photonic devices," by Della Corte, Francesco Giuseppe, and Sandro Ra, IEEE Transactions on Electron Devices 60.5 (2013): 1495-1505 (hereinafter referred to as "Corte"), the entire contents of which are incorporated herein by reference for all purposes. In addition, low-temperature and low-loss PECVD SiNx has been demonstrated in the following literature: "Material and optical properties of low-temperature NH3-free PECVD SiNx layers for photonic applications," by Bucio, Thalía Domínguez, et al., Journal of Physics D: Applied Physics 50.2(2016):025106 (hereinafter referred to as "Bucio"), the entire contents of which are incorporated herein by reference for all purposes.

Consider the following exemplary structure: a SiNx layer with a thickness between approximately 200 nanometers (nm) and 400 nm, which can be patterned and etched to form a light guide for the O to C frequency band. Beneath this SiNx light guide layer is a silicon dioxide layer with a thickness between approximately 50 nm and approximately 200 nm. Beneath this silicon dioxide layer is an a-Si-H (or a-Si) layer with a thickness between approximately 150 nm and approximately 300 nm. This a-Si-H (or a-Si) layer is another light guide layer and can be patterned and etched in the manner described in Sacher. In certain embodiments, the a-Si-H (or a-Si) layer can be fabricated above the SiNx layer rather than beneath it as described above. It will be appreciated that the exemplary structure of the film layer described above enables the polarization rotator-divider to be fabricated in a BEOL interposer device flow, thereby making it compatible with the interposer device manufacturing goals of high throughput and low cost.

FIG20A shows a vertical cross-sectional block diagram of an interposer device 1801A as part of an integrated MCM product, according to certain embodiments of the present invention. In the example of FIG20A , laser source 102, optical amplifier modules 303-1 through 303-N, and silicon photonics die/chip 1803 are recessed within interposer device 1801A. This type of recessed interface with interposer device 1801A enables coupling of light guides within interposer device 1801A with light guide edges within each of laser source 102, optical amplifier modules 303-1 through 303-N, and silicon photonics die/chip 1803, such as discussed above with respect to FIG5B . Furthermore, it should be understood that any of the laser source 102, optical amplifier modules 303-1 to 303-N, and silicon photonic die/chip 1803, as well as the interposer device 1801A, may suitably include a spot-size converter. The inclusion of a spot-size converter can be useful, given that the placement accuracy of the die/chip (e.g., laser source 102, optical amplifier modules 303-1 to 303-N, and silicon photonic die/chip 1803) on the interposer device 1801A can be within approximately 1 micron of the target position.

FIG20B shows another vertical cross-sectional block diagram of interposer device 1801A, according to certain embodiments of the present invention, as part of an integrated MCM product. In the example of FIG20B , laser source 102, optical amplifier modules 303-1 through 303-N, and silicon photonic die/chip 1803 are positioned and mounted on top of interposer device 1801A. This top-mounted interface with interposer device 1801A enables vertical coupling of light guides within interposer device 1801A with light guides within each of laser source 102, optical amplifier modules 303-1 through 303-N, and silicon photonic die/chip 1803, as discussed previously with respect to FIG3Y .

FIG20C shows another vertical cross-sectional block diagram of interposer device 1801A as part of an MCM integrated product, according to certain embodiments of the present invention. In the example of FIG20C , optical amplifier modules 303-1 through 303-N are recessed within interposer device 1801A, enabling optical waveguides within interposer device 1801A to couple with the edges of optical waveguides within optical amplifier modules 303-1 through 303-N. Furthermore, in the example of FIG20C , silicon photonics die/chip 1803 is positioned above interposer device 1801A, enabling optical waveguides within interposer device 1801A to couple vertically with optical waveguides within silicon photonics die/chip 1803. It should be understood that, in various embodiments, interposer device 1801A can be configured to provide substantially any combination of edge coupling and vertical coupling between the light guides of interposer device 1801A and the light guides of any die/chips interfacing with interposer device 1801A. Thus, in some embodiments, such as the example of FIG. 20C , some die/chips may interface with interposer device 1801A in a recessed configuration, while some die/chips may interface with interposer device 1801A in a surface-mounted, such as surface-mounted, configuration. Furthermore, in some embodiments, the top and bottom surfaces of interposer device 1801A may have one or more interfacing die/chips in a recessed and/or surface-mounted configuration.

FIG21 shows an isometric view of the top surface of an exemplary interposer device 1801B according to certain embodiments of the present invention. Interposer device 1801B includes a cavity/recess 2100 formed in its top surface. Cavity/recess 2100 is formed to receive a die/chip so that the die/chip optical edge couples to a light guide within interposer device 1801B. Each die/chip can be substantially any type of die/chip, including, in particular, a photonic die/chip, an electronic die/chip, and a silicon photonic die/chip. When the light guide within the die/chip is edge-coupled to a corresponding light guide within interposer device 1801B, it is advantageous to position the light guide within the die/chip adjacent to the light guide within interposer device 1801B, where proximity is considered to be less than approximately 10 microns along the axis of light propagation between the connected light guides. Therefore, it should be understood that cavity/recess 2100 is formed so that the sidewall(s) of cavity/recess 2100 to which edge coupling is intended is in close proximity to the die/chip when the die/chip is placed within cavity/recess 2100. An exemplary interposer device 1801B is shown including a light guide 2101 to illustrate that the light guide 2101 can have any routing path within the interposer device 1801B and that the light guide 2101 can optically connect to the die/chip(s) at more than one edge of the die/chip(s). It should be understood that each cavity/recess 2100 can have any desired size, perimeter shape, and depth to accommodate a die/chip. Furthermore, each cavity/recess 2100 can have a uniform depth or a non-uniform depth, i.e., multiple depths, to accommodate a die/chip, as desired. Furthermore, the example of FIG. 21 illustrates that, in some embodiments, one or more of the cavities/recesses 2100 can have side protrusions (or pockets) 2103 as epoxy reservoirs for capillary underfill.

FIG22 illustrates the exemplary interposer device 1801B of FIG21 , having a die/chip 2201 disposed within a cavity/recess 2100, according to certain exemplary embodiments of the present invention. FIG22 illustrates a side protrusion 2103A on one side of the die/chip 2201, wherein the cavity/recess 2100 is larger than the die/chip 2201. Epoxide may be disposed within the side protrusion 2103A to create an epoxy reservoir. The epoxy is disposed within the side protrusion 2103A so as not to completely cover the upper portion of the die/chip 2201. In certain cases, the presence of epoxy on the upper portion of the die/chip 2201 may have adverse effects such as creating a path of higher thermal impedance and/or causing stress cracking. For example, if epoxy is present on the top of die/chip 2201 and a cap is placed over die/chip 2201, the epoxy can cause stress fractures. The epoxy within side protrusions 2103A fills the void between die/chip 2201 and interposer device 1801B, including the void between cavity/recess 2100 and the sidewalls of die/chip 2201. This process is known as capillary underfill. Figure 22 also illustrates how a particular die/chip 2201 can be placed within a cavity/recess 2100 having two or more side protrusions 2103B. Furthermore, Figure 22 illustrates how a particular die/chip 2201 can be placed within a cavity/recess 2100 having side protrusions 2103B of different shapes.

Figures 23A through 23F illustrate an integrated mechanical transmission (MT) ferrule for connection to an interposer device 1801C, according to certain embodiments of the present invention. In certain embodiments, the MT ferrule can be used as the fiber-to-interposer connector 1903. The MT ferrule comprises an upper portion 2301 and a lower portion 2303. The upper and lower portions 2301, 2303 of the MT ferrule can be formed from silicon, glass, plastic, or other materials that are chemically compatible with the surrounding/interface materials and provide the required thermal and mechanical performance. The upper and lower portions 2301, 2303 of the MT ferrule can include one or more alignment keys 2305 to facilitate alignment and mating of the upper and lower portions 2301, 2303. For example, in the exemplary MT ferrule of Figures 23A to 23F, an alignment key 2305 on the upper portion 2301 protrudes outward from the upper portion 2301 and has a shape that complements, or conformally matches, the alignment key 2305 of the lower portion 2303. Alignment key 2305 is formed in the form of a cavity/recess within the lower portion 2303. In various embodiments, alignment key 2305 can have various cross-sectional shapes, such as triangular, rectangular, circular, or other shapes. The upper portion 2301 of the MT ferrule also includes one or more partial holes 2307, and the lower portion 2303 of the MT ferrule also includes one or more partial holes 2309. The partial holes 2307 and 2309 together form alignment holes to provide alignment between the integrated MT ferrule and another matching MT ferrule or another mating connector structure/device. In some embodiments, after the insert device 1801C is formed to accommodate the installation of the integrated MT ferrule, the structure of one or more tabs 2311 of the insert device 1801C remains unchanged. In some embodiments, one or more tabs 2311 disappear.

As shown in FIG23B , upper half 2301 and lower half 2303 are mounted to insert device 1801C to form an integrated MT ferrule. In various embodiments, upper half 2301 and lower half 2303 can be mounted to insert device 1801C using epoxy, glue, solder, or any other suitable adhesive. After the upper half 2301 and lower half 2303 of the MT ferrule are mounted to insert device 1801C to form the integrated MT ferrule, the integrated MT ferrule has a structure that mates with other mating connector structures/devices, such as a standard MT ferrule. However, it should be understood that the configuration of the integrated MT ferrule can mate with virtually any other type of mating connector structure/device and is not limited to use with a standard MT ferrule. Insert device 1801C includes a plurality of light guides 2313 extending to the edge of insert device 1801C between the upper and lower halves 2301 and 2303 of the integrated MT ferrule. In some embodiments, the light guides 2313 are positioned to match the pitch of the fiber optic receptacles within the connector structure/device that mates with the integrated MT ferrule, such as the pitch of fiber optic receptacles within a standard MT ferrule. In some embodiments, the edges of insert device 1801C at the locations of the light guides may be polished. Furthermore, in some embodiments, insert device 1801C may include one or more spot-size converters that work in conjunction with the integrated MT ferrule to improve optical coupling. For example, in some embodiments, such spot-size converters may be configured as chamfered corners of the light guides.

FIG24 shows an exemplary vertical cross-section of a through-laser source 102 according to certain embodiments of the present invention. However, it should be understood that the principles described with reference to FIG24 can be applied to other electronic and/or photonic devices, such as an optical amplifier module 303. For discussion purposes, the cross-section of FIG24 shows a plurality of lasers 103-1 to 103-N. However, it should be understood that in other electronic and/or photonic devices, the plurality of lasers 103-1 to 103-N can be other components. For example, if the cross-section of FIG24 is a cross-section of an optical amplifier module 303 rather than a cross-section of a laser source 102, the plurality of optical amplifiers 305-1 to 305-M can replace the plurality of lasers 103-1 to 103-N. FIG24 is a vertical cross-section illustrating a substrate 1021 of an electronic and/or photonic device, such as a laser source 102. In some embodiments, the substrate 1021 is formed of InP.

For III-V photonic devices, features can be defined by epitaxial growth (in the z-direction) of various epitaxial layers. Since the function of the device depends on the properties of the epitaxial layers, such as composition and thickness, the formation of the epitaxial layers is very well controlled. The vertical cross-section of Figure 24 shows three exemplary epitaxial layers 1022, 1023 and 1024. In some embodiments, epitaxial layer 1022 is the first photonic layer formed by epitaxial growth. In some embodiments, epitaxial layer 1022 is the N-type portion of a PIN diode. It should be understood that a PIN diode is a component of a distributed feedback laser (DFB) and a semiconductor optical amplifier (SOA). In some embodiments, epitaxial layer 1023 is the second photonic layer formed by epitaxial growth. In some embodiments, epitaxial layer 1023 is an intrinsic portion of a PIN diode. In some embodiments, epitaxial layer 1024 is a third photonic layer formed by epitaxial growth. In some embodiments, epitaxial layer 1024 is the p-type portion of a PIN diode.

The vertical cross-section of Figure 24 also shows planarization layer 1025. In various embodiments, planarization layer 1025 can be formed from benzocyclobutene (BCB), spin-on dielectric (SOD), or one or more other materials used in semiconductor manufacturing to form planarization layers. In some embodiments, the material of planarization layer 1025 is spun onto the wafer/substrate. Depending on the topography of the features underlying the planarization layer 1025 material being deposited, the process of spinning the planarization layer 1025 material onto the wafer/substrate can result in peaks and valleys. These peaks and valleys cause variations in the thickness of planarization layer 1025 across the wafer/substrate. Furthermore, the variation in the thickness of the planarization layer 1025 may be a function of radial position across the wafer/substrate, such as the variation in the thickness of the planarization layer 1025 from the center to the edge of the wafer/substrate.

The vertical cross-section of FIG. 24 also illustrates a conductive interconnect structure 1026 of the device. In certain exemplary embodiments, a conductive interconnect structure such as 1026 of a III-V device can be formed from one or more of Au, Ag, W, Ni, and other metals/alloys. In the example of FIG. 24 , conductive interconnect structure 1026 flip-chip connects the laser source 102 to the interposer device. For example, conductive interconnect structure 1026 can be soldered to a corresponding conductive structure on the interposer device.

FIG25 shows a vertical cross-sectional view of FIG24 after etching the planarization layer 1025 to expose a portion 1027 of the epitaxial layer 1024 (the third photonic layer), according to certain embodiments of the present invention. The exposed portion 1027 of the epitaxial layer 1024 functions as a "bonding shoulder." After etching the planarization layer 1025 to expose the portion 1027, the z-direction position of the top surface of the exposed portion 1027 of the epitaxial layer 1024 remains the same as it was upon completion of epitaxial growth of the epitaxial layer 1024. Because the epitaxial growth of epitaxial layer 1024 is well-controlled in the z-direction (much more so than the z-direction thickness of planarization layer 1025), the exposed portion 1027 of epitaxial layer 1024 provides a reference structure for precise and better z-direction control during a flip-chip operation. Furthermore, it should be noted that the light guide formed on laser source 102 can be formed from epitaxial layers 1022, 1023, and 1024. Therefore, using the exposed portion 1027 of epitaxial layer 1024 as a reference structure for z-direction control during a flip-chip connection operation results in more reliable optical coupling between the light guide of laser source 102 and the light guide of the interposer device.

FIG26 shows a vertical cross-sectional view of the laser source 102 of FIG25 flip-chip-connected to an interposer device 2601, according to certain embodiments of the present invention. In the example of FIG26 , as shown at location 2603, the exposed portion 1027 of the epitaxial layer 1024 is bonded to a nitride etch stop layer within the socket/cavity of the interposer device 2601. In the example of FIG26 , the interposer device 2601 is a silicon interposer. The nitride stop layer and the remaining interlayer dielectric (ILD) layer of the interposer device 2601 can be formed using wafer-level deposition techniques, such as, in particular, chemical vapor deposition (CVD) and/or atomic layer deposition (ALD). As a result, the accuracy of the nitride etch stop layer and other ILD layers within the interposer device 2601 can be well defined and well controlled. This enables good control of the z-direction alignment between the laser source 102 and the interposer device 2601.

In certain embodiments, the disclosed interposer device 1801/1801A/1801B/1801C includes a substrate. The substrate includes a laser source chip interface region for receiving the laser source chip 102. The substrate also includes a silicon photonics chip interface region for receiving the silicon photonics chip 1803. The substrate also includes an optical amplifier module interface region for receiving the optical amplifier modules 303-1-303-N. A fiber-to-interposer connection region is formed within the substrate to include a fiber-to-interposer connector 1903. A first set of optical transmission structures is formed within the substrate to optically connect the laser source chip 102 to the silicon photonics chip 1803 when the laser source chip 102 and the silicon photonics chip 1803 are interfaced with the substrate. A second set of optical transmission structures is formed within the substrate to optically connect silicon photonics chip 1803 to optical amplifier modules 303-1-303-N when the silicon photonics chip 1803 and optical amplifier modules 303-1-303-N are interfaced with the substrate. A third set of optical transmission structures is formed within the substrate to optically connect optical amplifier modules 303-1-303-N to the fiber-to-interposer connection area when the optical amplifier modules 303-1-303-N are interfaced with the substrate.

In some embodiments, the first set of optical transmission structures includes a light orchestration module formed within the substrate. The light orchestration module is configured to receive multiple laser beams having different wavelengths from the laser source chip 102, combine the multiple laser beams into a multi-wavelength laser light source, and transmit a portion of the multi-wavelength laser light source to each of a plurality of locations in the interface region of the silicon photonics chip. When the silicon photonics chip 1803 is interfaced with the substrate, the plurality of locations in the interface region of the silicon photonics chip are aligned with optical input ports of the silicon photonics chip 1803 corresponding to the plurality of laser beams. In some embodiments, the optical orchestration module includes an Nx1 phase-maintaining wavelength combiner 701 having an optical output optically connected to an optical input of a 1xM phase-maintaining broadband power divider 705, where N is the number of the plurality of laser beams and M is the number of the plurality of locations at the silicon photonics chip interface region, the plurality of locations at the silicon photonics chip interface region being aligned with the optical inputs of the corresponding plurality of laser beams of the silicon photonics chip 1803. In some embodiments, the optical orchestration module includes an array waveguide 801 having a plurality of optical inputs for receiving the plurality of laser beams and an optical output optically connected to the optical input of the broadband power divider 805. The broadband power divider 805 has a plurality of optical outputs for transmitting light to the plurality of locations in the interface region of the silicon photonics chip. The plurality of locations in the interface region of the silicon photonics chip are aligned with the optical input ports of the corresponding plurality of laser lights of the silicon photonics chip 1803.

In some embodiments, the optical orchestration module includes a step grating 901 having a plurality of optical inputs for receiving a plurality of laser beams. Step grating 901 has an optical output optically connected to an optical input of a broadband power divider 905. Broadband power divider 905 has a plurality of optical outputs for transmitting light to a plurality of locations in the interface region of the silicon photonics chip. The plurality of locations in the interface region of the silicon photonics chip are aligned with the optical inputs of the corresponding plurality of laser beams of the silicon photonics chip 1803. In some embodiments, the optical orchestration module includes a butterfly waveguide network 1001 having a plurality of optical inputs and a plurality of optical outputs, wherein the plurality of optical inputs are configured to receive a plurality of laser beams, and the plurality of optical outputs are configured to transmit the light to a plurality of locations at an interface region of the silicon photonics chip. The plurality of locations at the interface region of the silicon photonics chip are aligned with the corresponding plurality of laser light input ports of the silicon photonics chip 1803. In some embodiments, the optical orchestration module includes a star coupler 1101 having a plurality of optical inputs and a plurality of optical outputs, wherein the plurality of optical inputs are configured to receive a plurality of laser beams, and the plurality of optical outputs are configured to transmit the light to a plurality of locations at an interface region of the silicon photonics chip. The plurality of locations at the interface region of the silicon photonics chip are aligned with the corresponding plurality of laser light input ports of the silicon photonics chip 1803. In some embodiments, the optical orchestration module includes a resonant ring array 1201 having a plurality of optical inputs and a plurality of optical outputs. The plurality of optical inputs are configured to receive a plurality of laser beams, while the plurality of optical outputs are configured to transmit the light to a plurality of locations in the interface region of the silicon photonics chip. The plurality of locations in the interface region of the silicon photonics chip are aligned with the optical input ports of the silicon photonics chip 1803 corresponding to the plurality of laser beams.

In some embodiments, interposer device 1801/1801A/1801B/1801C includes local metal trace structures and conductive via structures formed within the substrate to provide electrical connections between silicon photonics chip 1803 and another electronic device interfacing with the substrate. In some embodiments, the silicon photonics chip interface region is used to flip-chip connect conductive structures within silicon photonics chip 1803 to corresponding conductive structures within the substrate. In some embodiments, the silicon photonics chip interface region is used to wire-bond conductive structures within silicon photonics chip 1803 to corresponding conductive structures within the substrate. In some embodiments, the silicon photonics chip interface region is configured to couple the edges of the first set of light-transmitting structures to the corresponding light inputs of the silicon photonics chip 1803 when the silicon photonics chip 1803 is interfaced with the substrate. Furthermore, the silicon photonics chip interface region is configured to couple the edges of the second set of light-transmitting structures to the corresponding light outputs of the silicon photonics chip 1803 when the silicon photonics chip 1803 is interfaced with the substrate. In some embodiments, the silicon photonics chip interface region is configured to vertically couple the first set of light-transmitting structures to the corresponding light inputs of the silicon photonics chip 1803 when the silicon photonics chip 1803 is interfaced with the substrate. Furthermore, the silicon photonic chip interface region is used to vertically couple the second set of light transmission structures to the corresponding light output of the silicon photonic chip 1803 when the silicon photonic chip 1803 interfaces with the substrate.

In some embodiments, the optical amplifier module interface region is used to couple the edges of the second set of optical transmission structures to the corresponding optical inputs and/or outputs of the optical amplifier modules 303-1-303-N when the optical amplifier modules 303-1-303-N are interfaced with the substrate. Furthermore, the optical amplifier module interface region is used to couple the edges of the third set of optical transmission structures to the corresponding optical outputs and/or inputs of the optical amplifier modules 303-1-303-N when the optical amplifier modules 303-1-303-N are interfaced with the substrate. In some embodiments, the optical amplifier module interface region is used to vertically couple the second set of optical transmission structures to the corresponding optical inputs and/or outputs of the optical amplifier modules 303-1-303-N when the optical amplifier modules 303-1-303-N are interfaced with the substrate. Furthermore, the optical amplifier module interface region is used to vertically couple the third set of optical transmission structures to the corresponding optical outputs and/or inputs of the optical amplifier modules 303-1-303-N when the optical amplifier modules 303-1-303-N interface with the substrate.

In some embodiments, the substrate is formed from one or more of silicon, glass, ceramic, an epoxy composite, and a polymer. In some embodiments, the first set of optical transmission structures is formed from one or more of silicon, oxide, polymer, and silicon nitride; the second set of optical transmission structures is formed from one or more of silicon, oxide, polymer, and silicon nitride; and the third set of optical transmission structures is formed from one or more of silicon, oxide, polymer, and silicon nitride. In some embodiments, the substrate includes a plurality of optical amplifier module interface regions for receiving optical amplifier modules 303-1-303-N. Furthermore, the second set of optical transmission structures is used to optically connect silicon photonics chip 1803 to multiple optical amplifier modules 303-1-303-N when silicon photonics chip 1803 and multiple optical amplifier modules 303-1-303-N are interfaced with the substrate. Furthermore, the third set of optical transmission structures is used to optically connect multiple optical amplifier modules 303-1-303-N to the connector 1903 region of the fiber optic interposer.

In some embodiments, the laser source chip interface region, the silicon photonics chip interface region, and the optical amplifier module interface region are disposed in a substantially symmetrical configuration within the substrate. In some embodiments, the laser source chip interface region, the silicon photonics chip interface region, and the optical amplifier module interface region are disposed in an asymmetrical configuration within the substrate. In some embodiments, the interposer device is integrated into a multi-chip module integrated product.

In some embodiments, a multi-chip module (MCM) is disclosed that includes an interposer device 1801/1801A/1801B/1801C. The MCM also includes a laser source chip 102 connected to the interposer device 1801/1801A/1801B/1801C. The MCM also includes a silicon photonics chip 1803 connected to the interposer device 1801/1801A/1801B/1801C. In some embodiments, the silicon photonics chip 1803 is a CMOS driver chip that interacts with the silicon photonic devices formed within the interposer device 1801/1801A/1801B/1801C. The MCM also includes optical amplifier modules 303-1-303-N connected to interposer devices 1801/1801A/1801B/1801C. Interposer devices 1801/1801A/1801B/1801C include a first set of optical transmission structures (e.g., light guides 1905, 1907 and/or an optical orchestration module) for optically connecting the laser source chip 102 to the silicon photonics chip 1803. Interposer devices 1801/1801A/1801B/1801C also include a second set of optical transmission structures (e.g., light guides 1909-1-1909-N) for optically connecting the silicon photonics chip 1803 to the optical amplifier modules 303-1-303-N. Interposer device 1801/1801A/1801B/1801C also includes a third set of optical transmission structures (e.g., light guides 1915-1-1915-N, 1911, 1913, and/or polarization rotator 1901) for optically connecting optical amplifier modules 303-1-303-N to a fiber-to-interposer connector 1903 region formed within interposer device 1801/1801A/1801B/1801C. Fiber-to-interposer connector 1903 couples core optical signals from a plurality of optical fibers to corresponding optical fibers within the third set of optical transmission structures. In some embodiments, the mechanical transmission ferrule 2301/2303 is connected to the insert device 1801/1801A/1801B/1801C. The mechanical transmission ferrule 2301/2303 is used to frame the fiber-to-insert connector 1903 area and index the fiber-to-insert connector 1903 area for multiple optical fibers.

In some embodiments, laser source chip 102 is connected to interposer device 1801/1801A/1801B/1801C via flip-chip or wire bonding. In some embodiments, laser source chip 102 is configured to generate and output multiple laser beams having different wavelengths. In some embodiments, the first set of optical transmission structures includes an optical arrangement module that receives the multiple laser beams from laser source chip 102, combines the multiple laser beams into a multi-wavelength laser light source, and transmits a portion of the multi-wavelength laser light source to each of the multiple laser light input ports of silicon photonics chip 1803. In some embodiments, the optical orchestration module includes an Nx1 phase-maintaining wavelength combiner 701 having an optical output, which is optically connected to the optical input of a 1xM phase-maintaining broadband power divider 705, where N is the number of laser beams and M is the number of laser beam optical inputs of the silicon photonics chip 1803. In some embodiments, the optical orchestration module includes an arrayed waveguide 801 having a plurality of optical inputs for receiving the plurality of laser beams and an optical output optically connected to the optical input of the broadband power divider 805. The broadband power divider 805 has a plurality of optical outputs for transmitting light to the laser beam optical inputs of the silicon photonics chip 1803.

In some embodiments, the optical orchestration module includes a step grating 901 having a plurality of optical inputs for receiving a plurality of laser beams and an optical output optically connected to an optical input of a broadband power divider 905. Broadband power divider 905 has a plurality of optical outputs for transmitting light to the optical inputs of the plurality of laser beams of silicon photonics chip 1803. In some embodiments, the optical orchestration module includes a butterfly waveguide network 1001 having a plurality of optical inputs for receiving a plurality of laser beams and a plurality of optical outputs for transmitting light to the optical inputs of the plurality of laser beams of silicon photonics chip 1803. In some embodiments, the optical orchestration module includes a star coupler 1101 having a plurality of optical inputs for receiving a plurality of laser beams and a plurality of optical outputs for transmitting light to the optical inputs of the plurality of laser beams of the silicon photonics chip 1803. In some embodiments, the optical orchestration module includes a resonant ring array having a plurality of optical inputs for receiving a plurality of laser beams and a plurality of optical outputs for transmitting light to the optical inputs of the plurality of laser beams of the silicon photonics chip 1803.

In some embodiments, optical amplifier modules 303-1-303-N are connected to interposer devices 1801/1801A/1801B/1801C via flip-chip or wire-bond connections. In some embodiments, optical amplifier modules 303-1-303-N include a plurality of optical amplifiers 305-1-305-M, such that each optical signal for data reception is amplified by a corresponding one of the optical amplifiers 305-1-305-M, and each optical signal for data transmission is amplified by a corresponding one of the optical amplifiers 305-1-305-M. In some embodiments, interposer devices 1801/1801A/1801B/1801C include integrated optical isolators for optically isolating light guides from one another. In some embodiments, the MCM includes a polarization rotator 1901. Polarization rotator 1901 receives input light from the fiber-pair interposer connector 1903 and splits the input light's TE and TM polarizations into TE polarization. Polarization rotator 1901 is optically connected to two corresponding light guides 1913, which guide light from polarization rotator 1901 to optical amplifier modules 303-1-303-N. In some embodiments, polarization rotator 1901 is a discrete component that interfaces with interposer devices 1801/1801A/1801B/1801C. In some embodiments, polarization rotator 1901 is formed within insert device 1801/1801A/1801B/1801C.

In some embodiments, the interposer device 1801/1801A/1801B/1801C includes a recessed region within which the laser source chip 102 is positioned so that the optical edge of a lightguide within the laser source chip 102 is coupled to a corresponding lightguide within the first set of light transmission structures within the interposer device 1801/1801A/1801B/1801C. In some embodiments, the lightguide within the laser source chip 102 is positioned within 10 microns of the corresponding lightguide within the first set of light transmission structures within the interposer device 1801/1801A/1801B/1801C. In some embodiments, the recessed region includes side protrusions that form a reservoir for an underfill material (e.g., epoxy) to provide a capillary underfill of the laser source chip 102. In some embodiments, the laser source chip 102 is disposed on an outer surface of the interposer device 1801/1801A/1801B/1801C such that the light guides within the laser source chip 102 are vertically coupled to corresponding light guides within the first set of light transmission structures within the interposer device 1801/1801A/1801B/1801C.

In some embodiments, the interposer device includes a recessed region, and the photonics chip 1803 is disposed in the recessed region so that the optical edges of the lightguides in the photonics chip 1803 are coupled to the corresponding lightguides in the first and second sets of light-transmitting structures formed in the interposer device 1801/1801A/1801B/1801C. In some embodiments, the recessed region includes side protrusions that form a reservoir for an underfill material (e.g., epoxy) to provide a capillary underfill of the silicon photonics chip 1803. In some embodiments, the lightguides in the silicon photonics chip 1803 are disposed within 10 microns of the corresponding lightguides in the first and second sets of light-transmitting structures formed in the interposer device 1801/1801A/1801B/1801C. In some embodiments, the silicon photonics chip 1803 is formed on an outer surface of the interposer device 1801/1801A/1801B/1801C such that the light guides within the silicon photonics chip 1803 are vertically coupled to corresponding light guides within the first and second sets of light transmission structures formed within the interposer device 1801/1801A/1801B/1801C.

In some embodiments, interposer device 1801/1801A/1801B/1801C includes a recessed region, and optical amplifier modules 303-1-303-N are disposed within the recessed region such that optical edges of lightguides within optical amplifier modules 303-1-303-N are coupled to corresponding lightguides within the second and third sets of light transmission structures formed within interposer device 1801/1801A/1801B/1801C. In some embodiments, the recessed region includes side protrusions that form a reservoir for an underfill material (e.g., epoxy) to provide a capillary underfill for optical amplifier modules 303-1-303-N. In some embodiments, the light guides within optical amplifier modules 303-1-303-N are located within 10 microns of corresponding light guides within the second and third sets of optical transmission structures within interposer devices 1801/1801A/1801B/1801C. In some embodiments, optical amplifier modules 303-1-303-N are disposed on an outer surface of interposer devices 1801/1801A/1801B/1801C such that the light guides within optical amplifier modules 303-1-303-N are vertically coupled to the corresponding light guides within the second and third sets of optical transmission structures within interposer devices 1801/1801A/1801B/1801C.

In certain embodiments, a mechanical transmission (MT) ferrule is disclosed. The MT ferrule includes an upper half (2301) having an upper alignment key (2305). The MT ferrule also includes a lower half (2303) having a lower alignment key (2305). The upper and lower alignment keys (2305) are adapted to mate with each other to provide alignment and fit between the upper half (2301) and the lower half (2303). Each of the upper and lower half members 2301 and 2303 is configured to receive an outer edge of the insert device 1801/1801A/1801B/1801C between the upper and lower half members 2301 and 2303, so that when the upper and lower half members 2301 are fitted to the lower half member 2303, the light guide exposed at the edge of the outer edge of the insert device 1801/1801A/1801B/1801C is exposed at a position between the upper and lower half members 2301 and 2303. In some embodiments, the upper and lower half members 2301 and 2303 are formed of silicon, glass, or plastic. In some embodiments, the upper half (2301) includes at least one upper hole (2307) and the lower half (2303) includes at least one lower hole (2309). The at least one upper hole (2307) and the at least one lower hole (2309) are configured to form at least one fully aligned hole (see FIG. 23F ) when the upper half (2301) and the lower half (2303) are mated and the outer edge of the insert device (1801/1801A/1801B/1801C) is located between the upper half (2301) and the lower half (2303). The at least one alignment hole is configured to provide alignment between the MT ferrule and another connector structure.

FIG27 is a flow chart illustrating a method for fabricating a multi-chip module (MCM) according to certain embodiments of the present invention. The method includes operation 2701, providing an interposer device (1801/1801A/1801B/1801C). The method also includes operation 2703, connecting a laser source chip (102) to the interposer device (1801/1801A/1801B/1801C). The method also includes operation 2705, connecting a silicon photonic chip (1803) to the interposer device (1801/1801A/1801B/1801C). The method also includes operation 2707, connecting an optical amplifier module (303-1-303-N) to the interposer device (1801/1801A/1801B/1801C). The interposer device (1801/1801A/1801B/1801C) includes a first set of optical transmission structures for optically connecting the laser source chip (102) to the silicon photonic chip (1803). The interposer device (1801/1801A/1801B/1801C) includes a second set of optical transmission structures for optically connecting the silicon photonic chip (1803) to the optical amplifier module (303-1-303-N). The insert device (1801/1801A/1801B/1801C) includes a third set of optical transmission structures, which are used to optically connect the optical amplifier modules (303-1-303-N) to the optical fiber to insert connection (1903) area within the insert device (1801/1801A/1801B/1801C). In some embodiments, the method includes operations for connecting a mechanical transmission ferrule (2301/2303) to an insert device (1801/1801A/1801B/1801C) such that the mechanical transmission ferrule (2301/2303) frames a fiber-to-insert connector (1903) region and indexing the fiber-to-insert connector (1903) region for connection to a plurality of optical fibers.

In some embodiments, the method includes forming local metal routing structures and conductive via structures within the interposer device (1801/1801A/1801B/1801C) to provide electrical connections between the silicon photonics chip (1803) and another electronic device interfacing with the interposer device (1801/1801A/1801B/1801C). In some embodiments, the laser source chip (102) is connected to the interposer device (1801/1801A/1801B/1801C) by a flip-chip connection or a wire-bonding connection. In some embodiments, the silicon photonics chip (1803) is connected to the interposer device (1801/1801A/1801B/1801C) by a flip-chip connection or a wire-bonding connection. In some embodiments, the optical amplifier module (303-1-303-N) is connected to the interposer device (1801/1801A/1801B/1801C) via flip chip connection or wire bonding connection.

In some embodiments, the method includes forming a first set of optical transmission structures to include an optical arrangement module configured to receive a plurality of laser beams from a laser source chip (102), combine the plurality of laser beams into a multi-wavelength laser light source, and transmit a portion of the multi-wavelength laser light source to each of the plurality of laser light input ports of a silicon photonics chip (1803). In some embodiments, the method includes forming an integrated optical isolator within the interposer device (1801/1801A/1801B/1801C) to isolate light guides within the interposer device (1801/1801A/1801B/1801C) from each other. In some embodiments, the method includes optically connecting a polarization rotator (1901) between a connector (1903) region of an optical fiber pair insert and an optical amplifier module (303-1-303-N). The polarization rotator (1901) is configured to receive light input from the connector (1903) region of the optical fiber pair insert and split the TE and TM polarizations of the input light into TE polarization. The polarization rotator (1901) is optically connected to two corresponding light guides (1913), which are configured to guide light from the polarization rotator (1901) to the optical amplifier module (303-1-303-N). In some embodiments, the polarization rotator (1901) is a discrete component that interfaces with the insert device (1801/1801A/1801B/1801C). In some embodiments, the polarization rotator (1901) is formed within the insert device (1801/1801A/1801B/1801C).

In some embodiments, the method includes forming a recessed region in an interposer device (1801/1801A/1801B/1801C) to receive a laser source chip (102). In some embodiments, the recessed region is configured to couple an optical edge of a light guide in the laser source chip (102) to a corresponding light guide in a first set of light transmission structures. In some embodiments, connecting the laser source chip (102) to the interposer device (1801/1801A/1801B/1801C) includes positioning the laser source chip (102) within 10 microns of a corresponding light guide in the first set of light transmission structures formed in the interposer device (1801/1801A/1801B/1801C). In some embodiments, the recessed area is formed to include side protrusions, the side protrusions forming a reservoir for an underfill material (e.g., epoxy) to provide a fine underfill of the laser source chip (102). In some embodiments, connecting the laser source chip (102) to the interposer device (1801/1801A/1801B/1801C) includes positioning the laser source chip (102) on an outer surface of the interposer device (1801/1801A/1801B/1801C) such that a light guide within the laser source chip (102) is vertically coupled to a corresponding light guide of the first set of light transmission structures.

In some embodiments, the method includes forming a recessed region in an interposer device (1801/1801A/1801B/1801C) to receive a silicon photonics chip (1803). In some embodiments, the recessed region is configured to couple optical edges of light guides in the silicon photonics chip (1803) to corresponding light guides in a first set of light transmission structures and a second set of light transmission structures formed in the interposer device (1801/1801A/1801B/1801C). In some embodiments, connecting the silicon photonics chip (1803) to the interposer device (1801/1801A/1801B/1801C) includes positioning the silicon photonics chip (102) within 10 microns of corresponding light guides within a first set of light transmission structures and a second set of light transmission structures formed within the interposer device (1801/1801A/1801B/1801C). In some embodiments, a recessed region is formed to include side protrusions, the side protrusions forming a reservoir for an underfill material (e.g., epoxy) to provide a capillary underfill of the silicon photonics chip (1803). In some embodiments, connecting the silicon photonics chip (1803) to the interposer device (1801/1801A/1801B/1801C) includes positioning the silicon photonics chip (1803) on an outer surface of the interposer device (1801/1801A/1801B/1801C) such that light guides within the silicon photonics chip (1803) are vertically coupled to corresponding light guides within a first set of light transmission structures and a second set of light transmission structures formed within the interposer device (1801/1801A/1801B/1801C).

In some embodiments, the method includes forming a recessed region in the interposer device (1801/1801A/1801B/1801C) to receive the optical amplifier module (303-1-303-N). In some embodiments, the recessed region is configured to couple optical edges of light guides in the optical amplifier module (303-1-303-N) to corresponding light guides in the second and third sets of light transmission structures formed in the interposer device (1801/1801A/1801B/1801C). In some embodiments, connecting the optical amplifier module (303-1-303-N) to the interposer device (1801/1801A/1801B/1801C) includes positioning the optical amplifier module (303-1-303-N) within 10 microns of corresponding light guides within the second set of optical transmission structures and the third set of optical transmission structures within the interposer device (1801/1801A/1801B/1801C). In some embodiments, a recessed region is formed to include side protrusions, the side protrusions forming a reservoir for an underfill material (e.g., epoxy) to provide a capillary underfill of the optical amplifier module (303-1-303-N). In some embodiments, connecting the optical amplifier module (303-1-303-N) to the interposer device (1801/1801A/1801B/1801C) includes positioning the optical amplifier module (303-1-303-N) on an outer surface of the interposer device (1801/1801A/1801B/1801C) such that a light guide within the optical amplifier module (303-1-303-N) is vertically coupled to corresponding light guides within a second set of optical transmission structures and a third set of optical transmission structures formed within the interposer device (1801/1801A/1801B/1801C).

The foregoing embodiments are provided for purposes of illustration and description. They are not intended to be exhaustive or to limit the present invention. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment and may be applied, interchangeable, or used in other selected embodiments, even if not specifically shown or described herein. They may also be modified in many ways. Such variations are not to be considered a departure from the present invention, and all such modifications are intended to be included within the scope of the present invention.

Although the present invention has been described in detail to provide a thorough understanding, it should be understood that certain variations and modifications are possible. Therefore, the present embodiments should be considered as illustrative rather than restrictive, and the present invention should not be limited to the specific details provided herein, but rather may be modified within the scope and equivalents of the present embodiments.

2701: Operation 2703: Operation 2705: Operation 2707: Operation

Claims (20)

A multi-chip module includes: a polarization rotator; a silicon photonics chip, wherein the silicon photonics chip and the polarization rotator are formed as separate components; and an interposer, to which the polarization rotator is attached and to which the silicon photonics chip is attached, the interposer including a fiber-to-interposer connection region, the interposer including a first set of light guides configured to optically connect the fiber-to-interposer connection region to the polarization rotator, and the interposer including a second set of light guides configured to optically connect the polarization rotator to the silicon photonics chip. A multi-chip module as in claim 1, wherein the polarization rotator is electrically connected to a first set of conductive structures formed in the interposer. A multi-chip module as in claim 2, wherein the polarization rotator is flip-chip bonded to the interposer. The multi-chip module of claim 2, wherein the silicon photonics chip is electrically connected to a second set of conductive structures formed within the interposer. The multi-chip module of claim 4, wherein the silicon photonics chip is flip-chip bonded to the interposer. A multi-chip module as in claim 1, wherein the polarization rotator is configured to receive incident light from the first set of light guides, the polarization rotator is configured to split the incident light into a first portion of light having a first polarization and a second portion of light having a second polarization, the polarization rotator is configured to rotate the second portion of light from the second polarization to the first polarization, the polarization rotator is optically connected to transmit the first portion of light having the first polarization into a first light guide of the second set of light guides, and the polarization rotator is optically connected to transmit the second portion of light having the first polarization into a second light guide of the second set of light guides. A multi-chip module as claimed in claim 1, wherein at least a portion of the polarization rotator is integrated into the insert. The multi-chip module of claim 1 further comprises: A set of optical amplifiers optically coupled to the second set of light guides, each configured to amplify an optical signal passing through the second set of light guides. The multi-chip module of claim 1, wherein the silicon photonics chip is recessed into the interposer. The multi-chip module of claim 9, wherein the second set of light guide edges are coupled to corresponding light guides within the silicon photonics chip. The multi-chip module of claim 9, wherein a recess formed in the silicon photonics chip to receive the interposer is formed with a side protrusion such that the silicon photonics chip does not cover the side protrusion. The multi-chip module of claim 11, further comprising: An epoxy material disposed within the side protrusion. A multi-chip module as claimed in claim 1, wherein the polarization rotator is recessed into the insert. A multi-chip module as in claim 13, wherein the first group of light guides are edge-coupled to corresponding light guides within the polarization rotator, or the second group of light guides are edge-coupled to corresponding light guides within the polarization rotator, or both the first group of light guides and the second group of light guides are edge-coupled to corresponding light guides within the polarization rotator. The multi-chip module of claim 13, wherein a recess formed in the silicon photonics chip to receive the polarization rotator is formed to have a side protrusion so that the polarization rotator does not cover the side protrusion. The multi-chip module of claim 15 further comprising: An epoxy material disposed within the side protrusion. The multi-chip module of claim 1, wherein the interposer includes a third set of light guides configured to optically connect the optical fiber to the interposer connection region to the silicon photonics chip. The multi-chip module of claim 17 further comprises: A set of optical amplifiers optically coupled to the third set of light guides, each configured to amplify an optical signal passing through the third set of light guides. The multi-chip module of claim 1, further comprising: An electronic device attached to the interposer, wherein the interposer includes at least one through-glass via (TGL) configured to provide an electrical connection between the silicon photonics chip and the electronic device. The multi-chip module of claim 19, wherein the electronic device and the silicon photonics chip are attached to opposite sides of the interposer.