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TWI893628B - How to clean the baseboard - Google Patents

How to clean the baseboard

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Publication number
TWI893628B
TWI893628B TW113103486A TW113103486A TWI893628B TW I893628 B TWI893628 B TW I893628B TW 113103486 A TW113103486 A TW 113103486A TW 113103486 A TW113103486 A TW 113103486A TW I893628 B TWI893628 B TW I893628B
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Taiwan
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liquid material
substrate
chamber
pressure
cleaning
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TW113103486A
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Chinese (zh)
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TW202506286A (en
Inventor
楊承恩
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楊承恩
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Application filed by 楊承恩 filed Critical 楊承恩
Priority to CN202410571975.3A priority Critical patent/CN119480682A/en
Priority to US18/776,323 priority patent/US20250050383A1/en
Priority to KR1020240102313A priority patent/KR20250023280A/en
Publication of TW202506286A publication Critical patent/TW202506286A/en
Application granted granted Critical
Publication of TWI893628B publication Critical patent/TWI893628B/en

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Abstract

一種清潔底板的方法,係包含有:一接著底板其上至少有一焊片,於接著底板與焊片間填充一液態材料,使液態材料覆蓋於接著底板上待清洗的物質上,將含有液態材料的接著底板置於一腔室中,控制腔室溫度至25~200℃之間,以一增減壓裝置及/或一真空產生器對腔室內氣體產生震盪式增減壓及/或震盪式抽真空,利用氣體的壓差變動造成液態材料的變動,而其壓差變動包括真空下的壓差變動、高壓至1大氣壓的壓差變動或高壓至真空的壓差變動,利用氣體的壓差變動,使液態材料經由壓差變動的摩擦搓洗而將附著於該接著底板上的待清洗物質帶離該接著底板。A method for cleaning a substrate includes: placing a substrate having at least one solder pad on it, filling a liquid material between the substrate and the solder pad so that the liquid material covers the substance to be cleaned on the substrate, placing the substrate containing the liquid material in a chamber, controlling the chamber temperature to between 25°C and 200°C, and using a pressure increasing and decreasing device and/or a vacuum generator to generate gas in the chamber. Oscillatory pressure increase and decrease and/or oscillatory vacuuming utilizes gas pressure differential fluctuations to cause changes in the liquid material. The pressure differential fluctuations include pressure differential fluctuations under vacuum, pressure differential fluctuations from high pressure to 1 atmosphere, or pressure differential fluctuations from high pressure to vacuum. The gas pressure differential fluctuations cause the liquid material to be scrubbed by the pressure differential fluctuations, removing the material to be cleaned from the contact plate.

Description

清潔底板的方法How to clean the baseboard

本發明提供一種底板清潔之技術領域,尤指其技術上提供一種清潔底板的方法,其藉由液態材料配合震盪式增減壓之氣流壓差變動驅動液態材料搓動或攪拌效果,使殘留物清潔效益提升者。The present invention provides a technical field for soleplate cleaning, and more particularly, a method for cleaning soleplates, wherein the method utilizes a liquid material in combination with an oscillating airflow pressure differential to drive the liquid material to rub or stir, thereby improving the efficiency of residue cleaning.

按,先進半導體元件製造材料間接合往往需使用膠劑,尤其在金屬接合時,有些膠劑通常具有高含酸量且具腐蝕性,以去除接合表面所形成的緊密氧化層。然而,此膠劑的腐蝕性本質卻嚴重地影響微電子元件的性能。因此,必須再進行一清洗步驟去除接合表面所殘留的膠劑或膠劑與金屬氧化物的反應殘留物。也有些膠劑會於使用後會留下部分有機物而在接合表面留下一層油酯,這樣的油酯也必須再進行一清洗步驟以避免後續對半導體元件產生可靠性的問題。但是,當接著底板上的線路越來越密或接著底板上用來接合的凸出物越來越小或接著底板與焊片接合間的縫隙越來越窄時,則上述的殘留物就越來越難清潔。殘留在接著底板或接合處的腐蝕性膠劑若未完全清除,將會使元件的可靠度大幅降低。此外,以目前普遍使用清洗溶劑的方式來清洗上述殘留物,若不當處理又會對環境造成衝擊。Advanced semiconductor manufacturing often requires the use of adhesives to bond materials. This is especially true for metal bonding. Some adhesives are often highly acidic and corrosive, effectively removing the dense oxide layer formed on the bonding surface. However, the corrosive nature of these adhesives can severely impact the performance of microelectronic components. Therefore, a cleaning step is necessary to remove any adhesive residue or residues from reactions between the adhesive and the metal oxide. Some adhesives also leave behind organic matter, leaving a layer of oil on the bonding surface. This oil also requires a cleaning step to prevent subsequent reliability issues for the semiconductor component. However, as the circuitry on the substrate becomes denser, the bumps used for bonding on the substrate become smaller, or the gap between the substrate and the solder pad becomes narrower, these residues become increasingly difficult to clean. If the corrosive adhesive remaining in the substrate or joints is not completely removed, it will significantly reduce component reliability. Furthermore, the current common method of using cleaning solvents to clean these residues can have an impact on the environment if not handled properly.

是以,針對上述習知先進半導體元件製造清潔所存在之問題點,如何開發一種更具理想實用性並兼顧經濟效益之清潔底板的方法,實消費者所殷切企盼,亦係相關業者須努力研發突破之目標及方向。Therefore, in response to the above-mentioned problems in the cleaning of advanced semiconductor component manufacturing, how to develop a more ideal, practical and economical method for cleaning the substrate is what consumers are eagerly looking forward to. It is also the goal and direction that related industries must strive to research and develop breakthroughs.

有鑑於此,發明人本於多年從事相關產品之製造開發與設計經驗,針對上述之目標,詳加設計與審慎評估後,終得一確具實用性之本發明。In light of this, the inventor, drawing upon years of experience in the manufacturing, development, and design of related products, has, after careful design and careful evaluation, ultimately arrived at the present invention, which is truly practical, with the aforementioned objectives in mind.

本發明之主要目的在於提供一種清潔底板的方法,其利用一種液態材料覆蓋於待清洗的接著底板上,將其置於一腔室中,提升溫度並施加震盪式增減壓之氣流壓差變動驅動液態材料搓動或攪拌效果,使殘留物清潔效益提升者。The primary objective of the present invention is to provide a method for cleaning substrates. The method utilizes a liquid material that covers the substrate to be cleaned, places the substrate in a chamber, raises the temperature, and applies a pulsating airflow pressure differential to drive the liquid material to rub or stir, thereby enhancing the residue cleaning efficiency.

為達上述目的,本發明提供一種清潔底板的方法,係包含有:將至少一焊片焊於接著底板上,於接著底板與焊片間填入一液態材料以覆蓋待清洗物質底板表面;將含有該液態材料的該接著底板置於一腔室中,控制腔室溫度至25~200℃之間,以一高壓增減壓裝置及/或一低壓真空產生器對腔室內氣體產生震盪式增減壓及/或震盪式抽真空,以產生壓差變動氣流,利用控制腔室內氣體的壓差變動造成液態材料的變動,使其產生如濤浪般的壓差變動摩擦搓動清潔效果,或使待清洗物質加速溶解於液態材料,其如糖加於水中施加攪拌加速溶糖效果,而其壓差變動包括真空下的壓差變動、高壓至1大氣壓的壓差變動或高壓至真空的壓差變動,利用氣體的壓差變動造成液態材料的變動,而使此與待清洗物質接觸的液態材料經由壓差變動產生較大能量所帶起的的摩擦搓洗而將附著於接著底板上的待清洗物質帶離接著底板與液態材料。另外,在上述腔室中控制腔室溫度至25~200℃之間,也會使上述存在的油酯膜或部分待清洗物質或接著底板內部吸附的水氣因為受熱而揮發產生氣體,利用上述的真空下的壓差變動、高壓至1大氣壓的壓差變動或高壓至真空的壓差變動,利用氣體的壓差變動造成液態材料的變動,也可以將該些氣體排出液態材料外。To achieve the above-mentioned object, the present invention provides a method for cleaning a substrate, comprising: welding at least one soldering piece to a substrate, filling a liquid material between the substrate and the soldering piece to cover the surface of the substrate to be cleaned; placing the substrate containing the liquid material in a chamber, controlling the chamber temperature to between 25°C and 200°C, and using a high-pressure pressure increasing and decreasing device and/or a low-pressure vacuum generator to generate a pressure differential variable airflow, thereby controlling the pressure differential variation of the gas in the chamber to cause the liquid material to change. The pressure differential fluctuations can generate a wave-like pressure change, which produces a frictional cleaning effect, or accelerates the dissolution of the substance to be cleaned in the liquid material. This is like adding sugar to water and applying agitation to accelerate the dissolution of the sugar. The pressure differential fluctuations include pressure differential fluctuations under vacuum, pressure differential fluctuations from high pressure to 1 atmosphere, or pressure differential fluctuations from high pressure to vacuum. The pressure differential fluctuations of the gas are used to cause the liquid material to fluctuate, and the liquid material in contact with the substance to be cleaned generates greater energy through friction and scrubbing brought about by the pressure differential fluctuations, thereby removing the substance to be cleaned attached to the base plate from the base plate and the liquid material. Furthermore, controlling the chamber temperature within the aforementioned chamber to between 25°C and 200°C will cause the existing grease film, a portion of the material to be cleaned, or moisture adsorbed within the substrate to evaporate due to heat, generating gas. By utilizing the aforementioned pressure differential changes under vacuum, from high pressure to 1 atmosphere, or from high pressure to vacuum, the pressure differential changes of the gas can be used to cause changes in the liquid material, thereby discharging the gas from the liquid material.

有關本發明所採用之技術、手段及其功效,茲舉一較佳實施例並配合圖式詳細說明於後,相信本發明上述之目的、構造及特徵,當可由之得一深入而具體的瞭解。The techniques, means and effects employed in the present invention are described in detail below with reference to a preferred embodiment and accompanying drawings. It is believed that the above-mentioned objectives, structures and features of the present invention can be thoroughly and specifically understood from the embodiments.

本發明係提供一種清潔底板的方法。The present invention provides a method for cleaning a soleplate.

為使 貴審查委員對本發明之目的、特徵及功效能夠有更進一步之瞭解與認識,茲配合實施方式及圖式詳述如後:To help you gain a deeper understanding of the purpose, features, and efficacy of this invention, we hereby provide a detailed description of its implementation and accompanying diagrams as follows:

參閱第1圖所示,本發明提供一種清潔底板的方法,其步驟係包含有:Referring to FIG. 1 , the present invention provides a method for cleaning a baseboard, the steps of which include:

(a) 焊接焊片10a:將至少一焊片焊接於一接著底板上;(a) Welding the soldering pad 10a: Welding at least one soldering pad to a connecting base plate;

(b)覆蓋液態材料20a:於該接著底板與至少一該焊片間填入一液態材料以覆蓋該接著底板上一待清洗物質;(b) Covering liquid material 20a: filling a liquid material between the connecting substrate and at least one of the solder pads to cover a substance to be cleaned on the connecting substrate;

(c)置入腔室30a:將含有該液態材料的該接著底板置於一腔室中;(c) placing in a chamber 30a: placing the substrate containing the liquid material in a chamber;

(d) 控制腔室溫度40a:控制該腔室於至少一預定溫度,該預定溫度得配合該液態材料的黏滯性,介於25~200℃之間,以增加該液態材料的流動性;(d) Controlling the chamber temperature 40a: controlling the chamber to at least one predetermined temperature, wherein the predetermined temperature is adjusted to match the viscosity of the liquid material and is between 25°C and 200°C to increase the fluidity of the liquid material;

(e)震盪式壓差變動清潔50a:以一真空產生器對該腔室內氣體產生震盪式低壓控制,以使腔室內的氣體分子產生壓差變動氣流,其為低壓下的壓差變動,範圍介於最大值不大於1大氣壓至最小值10 -5大氣壓間進行震盪式的壓差變動,利用真空產生器對該腔室內低壓氣體進行震盪式真空吸、放而產生的氣體變動造成對該液態材料的變動,又存在於至少一該焊片與該接著底板的該液態材料,因為與彼此間的毛細作用力與該液態材料的表面張力可牽引著該液態材料在產生更大的變動下也不會有溢開的問題,而使此與該待清洗物質接觸的該液態材料經由壓差變動產生較大能量所帶起的摩擦搓洗,而將附著於該接著底板上的該待清洗物質更有效地帶離該接著底板與該液態材料,達到傳統溶液清潔做不到的效果,透過氣體的壓差變動牽引該液態材料液體變動,其可降低直接能量的傳遞,減輕變動過大產生物體的破壞或該液態材料的噴濺。 (e) Oscillating pressure difference change cleaning 50a: A vacuum generator is used to generate an oscillating low-pressure control on the gas in the chamber, so that the gas molecules in the chamber generate a pressure difference change airflow, which is a pressure difference change under low pressure, ranging from a maximum value of no more than 1 atmosphere to a minimum value of 10-5 atmosphere. The vacuum generator is used to perform an oscillating vacuum suction and release on the low-pressure gas in the chamber, and the gas change generated causes the change of the liquid material. The liquid material exists in at least one of the soldering sheet and the bottom plate, because the capillary force between them and the surface tension of the liquid material can pull the liquid material to not overflow even when a larger change occurs, so that this is the same as the liquid material. The liquid material in contact with the cleaning material generates greater energy through friction and scrubbing due to the pressure differential fluctuation, effectively removing the cleaning material from the connecting plate and the liquid material, achieving a cleaning effect that cannot be achieved by traditional solution cleaning. The pressure differential fluctuation of the gas induces the liquid material to fluctuate, which can reduce direct energy transfer and alleviate damage to the object caused by excessive fluctuation or splashing of the liquid material.

所述之清潔底板的方法,其中該待清洗物質可為助焊劑、助焊劑殘留物、油酯、光刻膠或製程中之產生物。In the method for cleaning a substrate, the substance to be cleaned may be flux, flux residue, oil, grease, photoresist, or products produced during the manufacturing process.

所述之清潔底板的方法,其中該液態材料可為底膠,該底膠內可包含硬質顆粒,該硬質顆粒隨著該底膠變動所帶起的滾動,藉由該硬質顆粒增加摩擦搓洗效果,幫助清潔待清除物質。In the method for cleaning a base plate, the liquid material may be a base glue, which may contain hard particles. The hard particles roll as the base glue moves, thereby increasing the friction and scrubbing effect, thereby helping to clean the material to be removed.

參閱第2圖所示,本發明提供另一種清潔底板的方法,其步驟係包含有:Referring to FIG. 2 , the present invention provides another method for cleaning a floor, the steps of which include:

(a) 焊接焊片10b:將至少一焊片焊於一接著底板上;(a) Welding the soldering tabs 10b: Soldering at least one soldering tab to a connecting substrate;

(b)覆蓋液態材料20b:於該接著底板與至少一該焊片間填入一液態材料以覆蓋該接著底板上一待清洗物質;(b) Covering liquid material 20b: filling a liquid material between the connecting substrate and at least one of the solder pads to cover a substance to be cleaned on the connecting substrate;

(c)置入腔室30b:將含有該液態材料的該接著底板置於一腔室中;(c) placing in a chamber 30b: placing the substrate containing the liquid material in a chamber;

(d) 控制腔室溫度40b:控制該腔室於至少一預定溫度,該預定溫度得配合該液態材料的黏滯性,介於25~200℃之間,以增加該液態材料的流動性;(d) Controlling the chamber temperature 40b: controlling the chamber to at least one predetermined temperature, wherein the predetermined temperature is adjusted to match the viscosity of the liquid material and is between 25°C and 200°C to increase the fluidity of the liquid material;

(e)震盪式壓差變動清潔50b:以一增減壓裝置及一真空產生器對該腔室內氣體產生震盪式高壓增減壓及震盪式低壓抽真空,以使腔室內的氣體分子產生壓差變動氣流,其為增減壓裝置進行的震盪性高壓與真空產生器進行的震盪性低壓間所產生的氣體分子的壓差變動,範圍介於最大值50大氣壓至最小值10 -5大氣壓間進行震盪式的壓差變動,利用增減壓裝置的高壓以及真空產生器的低壓進行震盪性氣體分子的壓差變動造成該液態材料的變動,又存在於至少一該焊片與該接著底板的該液態材料,因為與彼此間的毛細作用力與該液態材料的表面張力可牽引著該液態材料在產生更大的變動下也不會有溢開的問題,而使此與該待清洗物質接觸的該液態材料經由壓差變動產生較大能量所帶起的摩擦搓洗,而將附著於該接著底板上的該待清洗物質更有效地帶離該接著底板與該液態材料,達到傳統溶液清潔做不到的效果,透過氣體的壓差變動牽引該液態材料液體變動,其可降低直接能量的傳遞,減輕變動過大產生物體的破壞或該液態材料的噴濺。 (e) Oscillating pressure difference change cleaning 50b: A pressure increasing and decreasing device and a vacuum generator are used to generate an oscillating high pressure increase and decrease and an oscillating low pressure vacuum in the gas in the chamber, so that the gas molecules in the chamber generate a pressure difference change airflow, which is the pressure difference change of the gas molecules generated by the oscillating high pressure of the pressure increasing and decreasing device and the oscillating low pressure of the vacuum generator, ranging from a maximum of 50 atmospheres to a minimum of 10 -5 atmospheres, the pressure difference changes in the oscillating gas molecules by the high pressure of the pressure increasing and decreasing device and the low pressure of the vacuum generator, causing the change of the liquid material. The liquid material exists in at least one of the welding pieces and the bottom plate. Because of the capillary force between them and the surface tension of the liquid material, the liquid material will not overflow even when a larger change occurs, so that this is consistent with the The liquid material in contact with the cleaning material is scrubbed by friction due to the greater energy generated by the pressure differential fluctuation. This effectively removes the cleaning material from the connecting plate and the liquid material, achieving a cleaning effect that cannot be achieved by traditional solution cleaning. The liquid material is induced to move by the pressure differential fluctuation of the gas, which can reduce direct energy transfer and mitigate damage to the object caused by excessive movement or splashing of the liquid material.

所述之清潔底板的方法,其中該待清洗物質可為助焊劑、助焊劑殘留物、油酯、光刻膠或製程中之產生物。In the method for cleaning a substrate, the substance to be cleaned may be flux, flux residue, oil, grease, photoresist, or products produced during the manufacturing process.

所述之清潔底板的方法,其中該液態材料可為底膠,該底膠內可包含硬質顆粒,該硬質顆粒隨著該底膠變動所帶起的滾動,藉由該硬質顆粒增加摩擦搓洗效果,幫助清潔待清除物質。In the method for cleaning a base plate, the liquid material may be a base glue, which may contain hard particles. The hard particles roll as the base glue moves, thereby increasing the friction and scrubbing effect, thereby helping to clean the material to be removed.

參閱第3圖所示,本發明提供又一種清潔底板的方法,其步驟係包含有;Referring to FIG. 3 , the present invention provides another method for cleaning a floor, the steps of which include:

(a) 焊接焊片10c:將至少一焊片焊於一接著底板上;(a) Welding the soldering tabs 10c: Soldering at least one soldering tab to a connecting substrate;

(b)覆蓋液態材料20c:於該接著底板與至少一該焊片間填入一液態材料以覆蓋該接著底板上一待清洗物質;(b) Covering liquid material 20c: filling a liquid material between the connecting substrate and at least one of the solder pads to cover a substance to be cleaned on the connecting substrate;

(c)置入腔室30c:將含有該液態材料的該接著底板置於一腔室中;(c) placing in a chamber 30c: placing the substrate containing the liquid material in a chamber;

(d) 控制腔室溫度40c:控制該腔室於至少一預定溫度,該預定溫度得配合該液態材料的黏滯性,介於25~200℃之間,以增加該液態材料的流動性;(d) Controlling the chamber temperature 40c: controlling the chamber to at least one predetermined temperature, wherein the predetermined temperature is adjusted to match the viscosity of the liquid material and is between 25°C and 200°C to increase the fluidity of the liquid material;

(e)震盪式壓差變動清潔50c:以一增減壓裝置對該腔室內氣體產生震盪式增減壓,以使腔室內的氣體分子產生壓差變動氣流,其為高壓至1大氣壓的壓差變動,範圍介於最大值50大氣壓至最小值1大氣壓間進行震盪式的壓差變動,利用增減壓裝置對高壓氣體進行震盪式的壓差變動造成該液態材料的變動,又存在於至少一該焊片與該接著底板的該液態材料,因為與彼此間的毛細作用力與該液態材料的表面張力可牽引著該液態材料在產生更大的變動下也不會有溢開的問題,而使此與該待清洗物質接觸的該液態材料經由壓差變動產生較大能量所帶起的摩擦搓洗,而將附著於該接著底板上的該待清洗物質更有效地帶離該接著底板與該液態材料,達到傳統溶液清潔做不到的效果,透過氣體的壓差變動牽引該液態材料液體變動,其可降低直接能量的傳遞,減輕變動過大產生物體的破壞或該液態材料的噴濺。(e) Oscillating pressure differential change cleaning 50c: A pressure increasing and decreasing device is used to generate an oscillating pressure increase and decrease on the gas in the chamber, so that the gas molecules in the chamber generate a pressure differential change airflow, which is a pressure differential change from high pressure to 1 atmosphere, and the range is between a maximum of 50 atmospheres and a minimum of 1 atmosphere. The oscillating pressure differential change of the high-pressure gas by the pressure increasing and decreasing device causes the liquid material to change. The liquid material existing in at least one of the soldering pieces and the bottom plate is subjected to a capillary force with the liquid material. The surface tension of the gas can pull the liquid material to avoid overflow even under greater fluctuations. The liquid material in contact with the cleaning material is subjected to frictional scrubbing caused by the greater energy generated by the pressure differential fluctuation. This effectively removes the cleaning material attached to the connecting plate and the liquid material, achieving a cleaning effect that cannot be achieved by traditional solution cleaning. The liquid material is pulled into motion by the pressure differential fluctuation of the gas, which can reduce direct energy transfer and alleviate damage to the object caused by excessive fluctuation or splashing of the liquid material.

所述之清潔底板的方法,其中該待清洗物質可為助焊劑、助焊劑殘留物、油酯、光刻膠或製程中之產生物。In the method for cleaning a substrate, the substance to be cleaned may be flux, flux residue, oil, grease, photoresist, or products produced during the manufacturing process.

所述之清潔底板的方法,其中該液態材料可為底膠,該底膠內可包含硬質顆粒,該硬質顆粒隨著該底膠變動所帶起的滾動,藉由該硬質顆粒增加摩擦搓洗效果,幫助清潔待清除物質。In the method for cleaning a base plate, the liquid material may be a base glue, which may contain hard particles. The hard particles roll as the base glue moves, thereby increasing the friction and scrubbing effect, thereby helping to clean the material to be removed.

參閱第4圖所示,本發明提供更一種清潔底板的方法,其步驟係包含有;Referring to FIG. 4 , the present invention provides another method for cleaning a baseboard, the steps of which include:

(a) 焊接焊片10d:將至少一焊片焊於一接著底板上;(a) Welding the soldering tabs 10d: Soldering at least one soldering tab to a connecting substrate;

(b)覆蓋液態材料20d:於該接著底板與至少一該焊片間填入一液態材料以覆蓋該接著底板上一待清洗物質;(b) Covering with liquid material 20d: filling a liquid material between the connecting substrate and at least one of the solder pads to cover a substance to be cleaned on the connecting substrate;

(c)置入腔室30d:將含有該液態材料的該接著底板置於一腔室中;(c) placing in a chamber 30d: placing the substrate containing the liquid material in a chamber;

(d) 控制腔室溫度40d:控制該腔室於至少一預定溫度,該預定溫度得配合該液態材料的黏滯性,介於25~200℃之間,以增加該液態材料的流動性;(d) Controlling the chamber temperature 40d: Controlling the chamber to at least one predetermined temperature, wherein the predetermined temperature is adjusted to match the viscosity of the liquid material and is between 25° C. and 200° C. to increase the fluidity of the liquid material;

(e) 物理性溶解清潔50d:以一增壓裝置對該腔室內產生至少一範圍介於最大值50大氣壓至最小值1大氣壓間的預定氣壓,利用填入之該液態材料與該待清洗物質接觸所產生的物理性溶解,而將附著於該接著底板的該待清洗物質溶解於該液態材料並利用該預定溫度與溶解後的濃度梯度所產生的擴散力,而將附著於該接著底板的該待清洗物質帶離該接著底板與該液態材料,達到傳統溶液清潔做不到的效果。(e) Physical dissolution cleaning 50d: A pressurizing device is used to generate a predetermined pressure within the chamber, ranging from a maximum of 50 atmospheres to a minimum of 1 atmosphere. The physical dissolution generated by the contact between the filled liquid material and the material to be cleaned dissolves the material to be cleaned attached to the substrate in the liquid material. The predetermined temperature and the concentration gradient after dissolution generate a diffusion force to remove the material to be cleaned attached to the substrate from the substrate and the liquid material, achieving a cleaning effect that cannot be achieved by traditional solution cleaning.

所述之清潔底板的方法,其中該待清洗物質可為助焊劑、助焊劑殘留物、油酯、光刻膠或製程中之產生物。In the method for cleaning a substrate, the substance to be cleaned may be flux, flux residue, oil, grease, photoresist, or products produced during the manufacturing process.

本發明將含有待清洗物質的接著底板置於ㄧ腔室中,其上覆蓋液態材料,利用氣體的壓差變動造成液態材料的變動,而使此與待清洗物質接觸的液態材料經由壓差變動產生較大能量所帶起的摩擦搓洗,而將附著於接著底板上的待清洗物質帶離接著底板與液態材料,達到傳統溶液清潔做不到的效果。另,加壓的環境,增加了氣體分子數量,使得氣體密度增加,也使得氣體的流動黏滯力增加,也使得液態材料增加了內在的壓力能使清洗物質的效果更好,也能減緩打入氣體的震波,或抽出氣體的引力波,降低不良效應者。The present invention places a substrate containing the material to be cleaned in a chamber and covers it with a liquid material. Fluctuations in gas pressure differentials cause the liquid material to fluctuate. This pressure differential generates greater energy, causing frictional scrubbing in the liquid material in contact with the material to be cleaned. This friction removes the material from the substrate and the liquid material, achieving a cleaning effect unattainable with traditional solution cleaning methods. Furthermore, the pressurized environment increases the number of gas molecules, increasing gas density and viscosity, and thus increasing the inherent pressure within the liquid material, enhancing cleaning effectiveness. It also mitigates shock waves injected into the gas and gravitational waves extracted from the gas, minimizing adverse effects.

由其上述可知,本發明之清潔基底板的方法,確為業界首見而符合發明專利之新穎性要件者,而其全面性之創新設計,符合發明專利之進步性要件,而其利用液態材料填充於焊片與接著底板間並覆蓋於接著底板上待清洗材料,且置於一腔室中,利用液態材料自身存在的表面張力以及與接著底板和接著底板上面焊片的毛細作用力,在提升溫度並施加震盪式增減壓或震盪式抽真空之氣流壓差變動驅動液態材料搓動或攪拌效果,使殘留物清潔效益提升,符合較佳之產業利用性者。As can be seen from the above, the present invention's method for cleaning substrates is truly the first of its kind in the industry and meets the novelty requirement for an invention patent. Its comprehensive innovative design also meets the advancement requirement for an invention patent. The method utilizes a liquid material that fills the space between the solder pad and the substrate, covering the material to be cleaned on the substrate. The liquid material is placed in a chamber and utilizes its own surface tension, as well as capillary forces between the substrate and the solder pad on the substrate. By increasing the temperature and applying a oscillatory pressure increase/decrease or oscillatory vacuum, the pressure differential in the airflow drives the liquid material to rub or stir, thereby enhancing the residue cleaning efficiency and meeting the requirements for better industrial applicability.

前文係針對本發明之較佳實施例為本發明之技術特徵進行具體之說明;惟,熟悉此項技術之人士當可在不脫離本發明之精神與原則下對本發明進行變更與修改,而該等變更與修改,皆應涵蓋於如下申請專利範圍所界定之範疇中。The foregoing description provides a detailed description of the technical features of the present invention with respect to the preferred embodiments thereof. However, persons skilled in the art may make changes and modifications to the present invention without departing from the spirit and principles of the present invention, and such changes and modifications shall be within the scope defined by the following patent application.

綜上所述,本發明係提供一種清潔底板的方法,其確已達到本發明之所有目的,另其組合結構之空間型態未見於同類產品,亦未曾公開於申請前,已符合專利法之規定,爰依法提出申請。In summary, the present invention provides a method for cleaning floorboards, which has achieved all of the present invention's objectives. Furthermore, the spatial configuration of its combined structure is not seen in similar products and has not been disclosed prior to the application. Therefore, it complies with the provisions of the Patent Law, and the application is filed in accordance with the law.

10a:焊接焊片 20a:覆蓋液態材料 30a:置入腔室 40a:控制腔室溫度 50a:震盪式壓差變動清潔 10b:焊接焊片 20b:覆蓋液態材料 30b:置入腔室 40b:控制腔室溫度 50b:震盪式壓差變動清潔 10c:焊接焊片 20c:覆蓋液態材料 30c:置入腔室 40c:控制腔室溫度 50c:震盪式壓差變動清潔 10d:焊接焊片 20d:覆蓋液態材料 30d:置入腔室 40d:控制腔室溫度 50d:物理性溶解清潔 10a: Soldering the solder pad 20a: Covering with liquid material 30a: Inserting into the chamber 40a: Controlling chamber temperature 50a: Oscillatory pressure differential cleaning 10b: Soldering the solder pad 20b: Covering with liquid material 30b: Inserting into the chamber 40b: Controlling chamber temperature 50b: Oscillatory pressure differential cleaning 10c: Soldering the solder pad 20c: Covering with liquid material 30c: Inserting into the chamber 40c: Controlling chamber temperature 50c: Oscillatory pressure differential cleaning 10d: Soldering the solder pad 20d: Covering with liquid material 30d: Inserting into the chamber 40d: Controlling chamber temperature 50d: Physical dissolution cleaning

[第1圖]係為本發明其一實施例之方法流程圖。 [第2圖]係為本發明另一實施例之方法流程圖。 [第3圖]係為本發明又一實施例之方法流程圖。 [第4圖]係為本發明更一實施例之方法流程圖。 [Figure 1] is a flow chart of a method according to one embodiment of the present invention. [Figure 2] is a flow chart of a method according to another embodiment of the present invention. [Figure 3] is a flow chart of a method according to yet another embodiment of the present invention. [Figure 4] is a flow chart of a method according to yet another embodiment of the present invention.

10a:焊接焊片 10a: Soldering the soldering lugs

20a:覆蓋液態材料 20a: Covering with liquid material

30a:置入腔室 30a: Place in chamber

40a:控制腔室溫度 40a: Control chamber temperature

50a:震盪式壓差變動清潔 50a: Oscillating pressure differential cleaning

Claims (10)

一種清潔底板的方法,其步驟包括:(a)焊接焊片:將至少一焊片焊接於一接著底板上;(b)覆蓋液態材料:於該接著底板與至少一該焊片間填入一液態材料以覆蓋該接著底板上一待清洗物質;(c)置入腔室:將含有該液態材料的該接著底板置於一腔室中;(d) 控制腔室溫度:控制該腔室於至少一預定溫度,該預定溫度得配合該液態材料的黏滯性,介於25~200℃之間;(e)震盪式壓差變動清潔:以一真空產生器對該腔室內氣體產生震盪式低壓控制,以使腔室內的氣體分子產生壓差變動氣流,其為低壓下的壓差變動,範圍介於最大值不大於1大氣壓至最小值10 -5大氣壓間進行震盪式的壓差變動,利用氣體真空吸、放力的低壓變動造成該液態材料的變動,而使此與該待清洗物質接觸的該液態材料經由壓差變動的摩擦搓洗,而將附著於該接著底板上的該待清洗物質帶離該接著底板與該液態材料。 A method for cleaning a substrate, comprising the following steps: (a) welding a soldering pad: welding at least one soldering pad to a substrate; (b) covering with a liquid material: filling a liquid material between the substrate and at least one of the soldering pads to cover a substance to be cleaned on the substrate; (c) placing the substrate in a chamber: placing the substrate containing the liquid material in a chamber; (d) Controlling the chamber temperature: controlling the chamber to at least one predetermined temperature, which is in the range of 25-200°C, in accordance with the viscosity of the liquid material; (e) Oscillating pressure differential change cleaning: using a vacuum generator to generate an oscillating low-pressure control on the gas in the chamber, so that the gas molecules in the chamber generate a pressure differential change flow, which is a pressure differential change under low pressure, ranging from a maximum value of no more than 1 atmosphere to a minimum value of 10 The pressure differential fluctuates between -5 atmospheres in an oscillatory manner. The low-pressure fluctuations of the vacuum suction and release force of the gas cause the liquid material to fluctuate. The liquid material in contact with the material to be cleaned is scrubbed by the friction of the pressure differential fluctuation, and the material to be cleaned attached to the base plate is removed from the base plate and the liquid material. 如請求項1所述之清潔底板的方法,其中該待清洗物質可為助焊劑、助焊劑殘留物、油酯、光刻膠或製程中之產生物。The method for cleaning a substrate as described in claim 1, wherein the substance to be cleaned may be flux, flux residue, oil grease, photoresist, or products produced during the manufacturing process. 如請求項1所述之清潔底板的方法,其中該液態材料可為底膠,該底膠內可包含硬質顆粒,該硬質顆粒隨著該底膠變動所帶起的滾動,藉由該硬質顆粒增加摩擦搓洗效果。In the method for cleaning a base plate as described in claim 1, the liquid material may be a base glue, and the base glue may contain hard particles. The hard particles roll as the base glue moves, thereby increasing the friction and scrubbing effect. 一種清潔底板的方法,其步驟包括:(a)焊接焊片:將至少一焊片焊接於一接著底板上;(b)覆蓋液態材料:於該接著底板與至少一該焊片間填入一液態材料以覆蓋該接著底板上一待清洗物質;(c)置入腔室:將含有該液態材料的該接著底板置於一腔室中;(d) 控制腔室溫度:控制該腔室於至少一預定溫度,該預定溫度得配合該液態材料的黏滯性,介於25~200℃之間;(e)震盪式壓差變動清潔:以一增減壓裝置及一真空產生器對該腔室內氣體產生震盪式高壓增減壓及震盪式低壓抽真空,以使腔室內的氣體分子產生壓差變動氣流,其為震盪式高壓與震盪式低壓間進行震盪式氣體分子的壓差變動,範圍介於最大值50大氣壓至最小值10 -5大氣壓間進行震盪式的壓差變動,利用增減壓裝置的高壓以及真空產生器的低壓進行震盪式氣體分子的壓差變動造成該液態材料的變動,而使此與該待清洗物質接觸的該液態材料經由壓差變動的摩擦搓洗,而將附著於該接著底板上的該待清洗物質帶離該接著底板與該液態材料。 A method for cleaning a substrate, comprising the following steps: (a) welding a soldering pad: welding at least one soldering pad to a substrate; (b) covering with a liquid material: filling a liquid material between the substrate and at least one of the soldering pads to cover a substance to be cleaned on the substrate; (c) placing the substrate in a chamber: placing the substrate containing the liquid material in a chamber; (d) Controlling the chamber temperature: controlling the chamber to at least one predetermined temperature, which is in the range of 25-200°C, in accordance with the viscosity of the liquid material; (e) Oscillating pressure differential change cleaning: using a pressure increasing and decreasing device and a vacuum generator to generate an oscillating high-pressure increase and decrease and an oscillating low-pressure vacuum on the gas in the chamber, so that the gas molecules in the chamber generate a pressure differential change flow, which is an oscillating pressure differential change of the gas molecules between the oscillating high pressure and the oscillating low pressure, ranging from a maximum of 50 atmospheres to a minimum of 10 -5 atmospheres, and uses the high pressure of the pressure increasing and decreasing device and the low pressure of the vacuum generator to cause the pressure difference of the gas molecules to fluctuate, causing the liquid material to fluctuate. The liquid material in contact with the material to be cleaned is rubbed by the pressure difference fluctuation, and the material to be cleaned attached to the connecting plate is removed from the connecting plate and the liquid material. 如請求項4所述之清潔底板的方法,其中該待清洗物質可為助焊劑、助焊劑殘留物、油酯、光刻膠或製程中之產生物。The method for cleaning a substrate as described in claim 4, wherein the substance to be cleaned may be flux, flux residue, oil grease, photoresist, or products produced during the manufacturing process. 如請求項4所述之清潔底板的方法,其中該液態材料可為底膠,該底膠內可包含硬質顆粒,該硬質顆粒隨著該底膠變動所帶起的滾動,藉由該硬質顆粒增加摩擦搓洗效果。In the method for cleaning a base plate as described in claim 4, the liquid material may be a base glue, and the base glue may contain hard particles. The hard particles roll as the base glue moves, thereby increasing the friction and scrubbing effect. 一種清潔底板的方法,其步驟包括:(a)焊接焊片:將至少一焊片焊接於一接著底板上;(b)覆蓋液態材料:於該接著底板與至少一該焊片間填入一液態材料以覆蓋該接著底板上一待清洗物質;(c)置入腔室:將含有該液態材料的該接著底板置於一腔室中;(d) 控制腔室溫度:控制該腔室於至少一預定溫度,該預定溫度得配合該液態材料的黏滯性,介於25~200℃之間;(e)震盪式壓差變動清潔:以一增減壓裝置對該腔室內氣體產生震盪式增減壓,以使腔室內的氣體分子產生壓差變動氣流,其為高壓至1大氣壓的壓差變動,範圍介於最大值50大氣壓至最小值1大氣壓間進行震盪式的壓差變動,利用增減壓裝置對高壓氣體進行震盪式壓差變動造成該液態材料的變動,而使此與該待清洗物質接觸的該液態材料經由壓差變動的摩擦搓洗,而將附著於該接著底板上的該待清洗物質帶離該接著底板與該液態材料。A method for cleaning a substrate, comprising the following steps: (a) welding a soldering pad: welding at least one soldering pad to a substrate; (b) covering with a liquid material: filling a liquid material between the substrate and at least one of the soldering pads to cover a substance to be cleaned on the substrate; (c) placing the substrate in a chamber: placing the substrate containing the liquid material in a chamber; (d) Controlling the chamber temperature: controlling the chamber to at least one predetermined temperature, which is in the range of 25-200°C, in accordance with the viscosity of the liquid material; (e) Oscillating pressure differential cleaning: using a pressure increasing and decreasing device to generate an oscillating pressure increase and decrease on the gas in the chamber, so that the gas molecules in the chamber generate a pressure differential flow, which is a pressure differential change from high pressure to 1 atmosphere, with a range of The pressure differential fluctuates between a maximum of 50 atmospheres and a minimum of 1 atmosphere. The high-pressure gas is subjected to an oscillatory pressure differential fluctuation using a pressure increasing and decreasing device, causing the liquid material to fluctuate. The liquid material in contact with the material to be cleaned is scrubbed by the pressure differential fluctuation, and the material to be cleaned attached to the base plate is removed from the base plate and the liquid material. 一種清潔底板的方法,其步驟包括:(a)焊接焊片:將至少一焊片焊接於一接著底板上;(b)覆蓋液態材料:於該接著底板與至少一該焊片間填入一液態材料以覆蓋該接著底板上一待清洗物質;(c)置入腔室:將含有該液態材料的該接著底板置於一腔室中;(d) 控制腔室溫度:控制該腔室於至少一預定溫度,該預定溫度得配合該液態材料的黏滯性,介於25~200℃之間;(e)物理性溶解清潔:以一增壓裝置對該腔室內產生至少一範圍介於最大值50大氣壓至最小值1大氣壓間的預定氣壓,利用填入之該液態材料與該待清洗物質接觸所產生的物理性溶解,將附著於該接著底板的該待清洗物質溶解於該液態材料並利用該預定溫度與溶解後的濃度梯度所產生的擴散力,而將附著於該接著底板的該待清洗物質帶離該接著底板與該液態材料。A method for cleaning a substrate, comprising the following steps: (a) welding a soldering pad: welding at least one soldering pad to a substrate; (b) covering with a liquid material: filling a liquid material between the substrate and at least one of the soldering pads to cover a substance to be cleaned on the substrate; (c) placing the substrate in a chamber: placing the substrate containing the liquid material in a chamber; (d) Controlling the chamber temperature: The chamber is controlled at at least one predetermined temperature, which is adjusted to the viscosity of the liquid material and is between 25°C and 200°C. (e) Physical dissolution cleaning: A pressurizing device is used to generate at least one predetermined pressure within the chamber, ranging from a maximum of 50 atmospheres to a minimum of 1 atmosphere. Physical dissolution occurs when the liquid material comes into contact with the material to be cleaned, dissolving the material to be cleaned attached to the substrate in the liquid material. The material to be cleaned attached to the substrate is then removed from the substrate and the liquid material by diffusion forces generated by the predetermined temperature and the concentration gradient after dissolution. 如請求項7或8所述之清潔底板的方法,其中該待清洗物質可為助焊劑、助焊劑殘留物、油酯、光刻膠或製程中之產生物。The method for cleaning a substrate as described in claim 7 or 8, wherein the substance to be cleaned may be flux, flux residue, oil grease, photoresist or products produced during the manufacturing process. 如請求項7所述之清潔底板的方法,其中該液態材料可為底膠,該底膠內可包含硬質顆粒,該硬質顆粒隨著該底膠變動所帶起的滾動,藉由該硬質顆粒增加摩擦搓洗效果。In the method for cleaning a base plate as described in claim 7, the liquid material may be a base glue, and the base glue may contain hard particles, and the hard particles roll as the base glue moves, thereby increasing the friction and scrubbing effect.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170348736A1 (en) * 2014-12-19 2017-12-07 Daniele Marino Liquid discharge device
CN110871192A (en) * 2019-10-30 2020-03-10 宁波兰羚钢铁实业有限公司 Method for reducing heavy oil coating and oil stain on surface of steel coil in longitudinal shearing processing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170348736A1 (en) * 2014-12-19 2017-12-07 Daniele Marino Liquid discharge device
CN110871192A (en) * 2019-10-30 2020-03-10 宁波兰羚钢铁实业有限公司 Method for reducing heavy oil coating and oil stain on surface of steel coil in longitudinal shearing processing

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