TWI891438B - Edge coupler having suspended waveguide with improved mechanical rigidity - Google Patents
Edge coupler having suspended waveguide with improved mechanical rigidityInfo
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- TWI891438B TWI891438B TW113125922A TW113125922A TWI891438B TW I891438 B TWI891438 B TW I891438B TW 113125922 A TW113125922 A TW 113125922A TW 113125922 A TW113125922 A TW 113125922A TW I891438 B TWI891438 B TW I891438B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
- G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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Abstract
Description
本揭露內容涉及矽光子邊緣耦合器、光學封裝、光纖耦合器、懸吊邊緣耦合器的結構,以及製造這些結構的方法。 This disclosure relates to silicon photonic edge couplers, optical packages, fiber optic couplers, suspended edge coupler structures, and methods for fabricating these structures.
光通訊連結需要低損耗的光耦合進出光子晶片以降低成本。 Optical communication links require low-loss light coupling into and out of photonic chips to reduce costs.
現有方法嘗試在矽波導和單模光纖(single-mode fibre,SMF)之間實現有效耦合,包括表面光柵和斑點尺寸轉換器(spot-size converters,SSC),例如反向錐、懸吊邊緣耦合器、多層邊緣耦合器。然而,現有方法並不令人滿意。 Existing approaches attempt to achieve efficient coupling between silicon waveguides and single-mode fibers (SMFs), including surface gratings and spot-size converters (SSCs), such as inverted tapers, suspended edge couplers, and multi-layer edge couplers. However, existing approaches are unsatisfactory.
表面光柵具有有限的光學頻寬,且對偏振敏感,因此限制了其在波長分割多工中的使用。 Surface gratings have limited optical bandwidth and are polarization sensitive, which limits their use in wavelength division multiplexing.
包含反向錐的邊緣耦合器具有寬廣的光學頻寬,因為其操作基於模式重疊。然而,由於矽(Si)基板靠近埋氧化層(buried oxide,BOX),模態擴展受到基板洩漏的限制。儘管對於 具有小模場直徑(small mode-field diameters,MFD)的光纖可以實現低耦合損耗,但對於標準單模光纖,耦合損耗會大幅增加。此外,由於這類邊緣耦合器的MFD很小,因此具有非常小的對準容差。 Edge couplers containing inverted tapers offer wide optical bandwidth because their operation is based on mode overlapping. However, due to the proximity of the silicon (Si) substrate to the buried oxide (BOX), modal spreading is limited by substrate leakage. While low coupling loss can be achieved for optical fibers with small mode-field diameters (MFD), it increases significantly for standard single-mode optical fibers. Furthermore, due to the low MFD of these edge couplers, they have very tight alignment tolerances.
包含多層斑點尺寸轉換器的邊緣耦合器有助於緩解基板洩漏問題並提供寬鬆的對準容差。這些器件包括幾層低折射率波導(例如氮化矽),層間具有包覆材料(例如氧化矽、氧氮化矽)並位於標準波導層(例如絕緣層上矽)之上。然而,形成多層邊緣耦合器的層疊結構增加了整合製程的複雜性,而低折射率波導及其間包覆層的多層沉積增加了整個晶圓的整體薄膜應力。 Edge couplers containing multilayer spot-size converters help alleviate substrate leakage issues and offer wide alignment tolerances. These devices consist of several layers of low-refractive-index waveguides (e.g., silicon nitride) with cladding materials (e.g., silicon oxide, silicon oxynitride) between them, layered on top of standard waveguide layers (e.g., silicon-on-insulator). However, the stacked structure that forms these multilayer edge couplers increases the complexity of the integration process, while the multiple deposition layers of low-refractive-index waveguides and the cladding layers between them increase the overall film stress across the wafer.
在基於絕緣層上矽的光子平台中,另一種邊緣耦合器方法提供了使用氧化矽頂部包覆層材料與底部包覆層材料(又稱為BOX層)來定義耦合波導。這是通過一系列蝕刻步驟將氧化矽頂部包覆層和BOX層與矽基板隔離,並在矽基板之上創建由頂部氧化物包覆層和BOX層組成的懸吊氧化物波導來實現的。「氧化矽」一詞和「氧化物」一詞是等同的,在此之後可互換使用。 In silicon-on-insulator (SOI)-based photonic platforms, another edge coupler approach uses a silicon oxide top cladding material and a bottom cladding material (also known as a BOX layer) to define coupled waveguides. This is achieved by isolating the silicon oxide top cladding and BOX layers from the silicon substrate through a series of etching steps, creating a suspended oxide waveguide composed of the top oxide cladding and BOX layers above the silicon substrate. The terms "silicon oxide" and "oxide" are equivalent and will be used interchangeably hereafter.
懸吊氧化物波導與其餘頂部包覆層和BOX層以及大塊基板隔離,以防止基板洩漏。此外,懸吊氧化物波導的寬度可以調整以匹配輸入光束的模式尺寸。 The suspended oxide waveguide is isolated from the rest of the top cladding and BOX layers, as well as the bulk substrate, to prevent substrate leakage. Furthermore, the width of the suspended oxide waveguide can be tuned to match the mode size of the input beam.
此外,由於耦合波導由氧化矽製成,矽光纖和耦合波導的折射率將相似,從而最小化菲涅爾反射。如果耦合界面浸入適當的折射率匹配油中,懸吊邊緣耦合器可以實現低至1.0dB/面的 耦合損耗。 Furthermore, because the coupling waveguide is made of silicon oxide, the refractive indices of the silicon fiber and the coupling waveguide are similar, minimizing Fresnel reflections. If the coupling interface is immersed in an appropriate index-matching oil, suspended edge couplers can achieve coupling losses as low as 1.0 dB/plane.
在基於絕緣層上矽的光子平台中,氧化矽耦合波導的隔離是通過首先將包覆材料蝕刻到矽基板來實現的。接著進行各向同性(isotropic)矽蝕刻,其中結構向矽基板方向被蝕刻幾十微米。這允許從被空氣包覆的氧化矽中定義出耦合波導。 In photonic platforms based on silicon-on-insulator layers, isolation of the silicon oxide coupled waveguides is achieved by first etching the cladding material down to the silicon substrate. This is followed by an isotropic silicon etch, where the structure is etched tens of microns toward the silicon substrate. This allows the coupled waveguides to be defined within the silicon oxide enveloped by air.
數百微米長的懸吊波導通過兩側的一排氧化物支撐桿與大塊頂部氧化物包覆層相連,以防止塌陷。 The suspended waveguide, hundreds of microns long, is connected to the bulk top oxide cladding by a row of oxide support rods on both sides to prevent collapse.
為了不干擾通過懸吊氧化物波導傳播的光學模式,具有小特徵尺寸的支撐桿是可取的。然而,這造成了設計上的權衡,因為具有更寬特徵尺寸的支撐桿可改善對抗震動、振動和剪切效應的機械支撐。 To avoid disturbing the optical modes propagating through the suspended oxide waveguide, support rods with small feature sizes are desirable. However, this creates a design trade-off, as support rods with wider feature sizes provide improved mechanical support against shock, vibration, and shear effects.
這在高度集成的多輸入/輸出耦合方案中尤為重要,例如,在光子集成電路中,使用緊密排列的一排懸吊邊緣耦合器作為光學相位陣列發射器/接收器模塊。在這種使用情況下,具有小特徵尺寸氧化物支撐桿的懸吊邊緣耦合器更容易發生波導塌陷和/或斷裂,因為由於相鄰波導的各向同性矽蝕刻的累積效應,支撐桿寬度可能進一步減小。 This is particularly important in highly integrated multi-input/output coupling schemes, such as those used in photonic integrated circuits, where a closely packed array of suspended edge couplers is used as an optical phase array transmitter/receiver module. In this use case, suspended edge couplers with small feature size oxide support rods are more susceptible to waveguide collapse and/or cracking, as the support rod width can be further reduced due to the cumulative effects of isotropic silicon etching of adjacent waveguides.
圖1A、圖1B和圖1C展示了具有矩形平面的傳統懸吊邊緣耦合器100,其具有氧化物支撐桿。 Figures 1A, 1B, and 1C illustrate a conventional suspended edge coupler 100 having a rectangular planar surface with oxide support rods.
傳統懸吊邊緣耦合器100包括懸吊氧化物波導102,懸吊氧化物波導102兩側的多排隔離溝槽104,一排具有矩形覆蓋區106的氧化物支撐桿,排列在懸吊氧化物波導102兩側以提供 機械支撐,奈米錐108用於促進光從懸吊氧化物波導102到矽波導110的絕熱耦合。 A conventional suspended edge coupler 100 includes a suspended oxide waveguide 102, multiple rows of isolation trenches 104 on either side of the suspended oxide waveguide 102, a row of oxide support rods with rectangular footprints 106 arranged on either side of the suspended oxide waveguide 102 to provide mechanical support, and nanocones 108 for facilitating adiabatic coupling of light from the suspended oxide waveguide 102 to a silicon waveguide 110.
雖然許多現有方法專注於優化耦合性能,但很少有方法關注懸吊邊緣耦合器的機械可靠性或堅硬度。 While many existing methods focus on optimizing coupling performance, few address the mechanical reliability or robustness of suspended edge couplers.
根據第一方面,邊緣耦合器包括:懸吊波導具有縱向和橫向,波導排列在縱向排列的兩行週期性的隔離溝槽之間;外部包覆層;多個側向支撐桿排列在隔離溝槽之間並互連波導和外部包覆層;矽基板具有與隔離溝槽流體連通的腔體,其中波導和支撐桿懸吊在腔體之上,其中外部包覆層由基板支撐;以及第二波導的反向錐嵌入在懸吊波導中,其中每個支撐桿包括具有與波導介面的第一邊寬度和與包覆層介面的第二邊寬度的覆蓋區(footprint),其中第二邊寬度大於第一邊寬度。 According to a first aspect, an edge coupler includes: a suspended waveguide having longitudinal and lateral dimensions, the waveguide being arranged between two rows of periodic isolation trenches arranged in the longitudinal direction; an external cladding; a plurality of lateral support rods arranged between the isolation trenches and interconnecting the waveguide and the external cladding; a silicon substrate having a cavity in fluid communication with the isolation trenches, wherein the waveguide and the support rods are suspended above the cavity, wherein the external cladding is supported by the substrate; and an inverted cone of a second waveguide embedded in the suspended waveguide, wherein each support rod includes a footprint having a first side width interfacing with the waveguide and a second side width interfacing with the cladding, wherein the second side width is greater than the first side width.
根據第二方面,製造邊緣耦合器的方法,該方法包括:在絕緣層上矽(silicon-on-insulator,SOI)結構上形成頂部包覆層,該SOI結構包括形成在埋氧化層(buried oxide,BOX)上的矽層,該埋氧化層形成在矽基板上;在不蝕刻矽基板的情況下,用縱向排列的兩行周期性隔離溝槽列對頂部包覆層和SOI結構進行圖案蝕刻以定義在縱向排列的兩行周期性隔離溝槽之間的內部包覆層、被縱向排列的兩行周期性隔離溝槽中的一個與內部包覆層分離的外部包覆層、以及互連內部包覆層和外部包覆層的側向 支撐桿;對矽基板進行各向同性蝕刻以使內部包覆層懸吊,從而提供懸吊波導;其中每個支撐桿包括覆蓋區,覆蓋區具有與懸吊波導介面的第一邊寬度和與外部包覆層介面的第二邊寬度,其中第二邊寬度大於第一邊寬度,並且其中第一波導包括第二波導的反向錐。 According to a second aspect, a method for manufacturing an edge coupler includes forming a top cladding layer on a silicon-on-insulator (SOI) structure, the SOI structure including a silicon layer formed on a buried oxide (BOX) layer formed on a silicon substrate; pattern etching the top cladding layer and the SOI structure with two longitudinally arranged rows of periodic isolation trenches without etching the silicon substrate to define an inner cladding layer between the two longitudinally arranged rows of periodic isolation trenches, an outer cladding layer separated from the inner cladding layer by one of the two longitudinally arranged rows of periodic isolation trenches, and an outer cladding layer. and lateral support rods interconnecting the inner cladding and the outer cladding; isotropically etching the silicon substrate to suspend the inner cladding, thereby providing a suspended waveguide; wherein each support rod includes a cover region having a first side width interfacing with the suspended waveguide and a second side width interfacing with the outer cladding, wherein the second side width is greater than the first side width, and wherein the first waveguide includes an inverted taper of the second waveguide.
100,200:邊緣耦合器 100,200:Edge Coupler
102,202:波導 102,202: Waveguide
104,204:溝槽 104,204: Groove
106:覆蓋區 106: Coverage Area
206:支撐桿 206: Support rod
108,208:錐 108,208: Cone
110,210:波導 110,210: Waveguide
112,114,212,214:包覆層 112,114,212,214: Coating layer
116,216:基板 116,216:Substrate
118,218:腔體 118,218: Cavity
222:內部包覆層 222: Inner cladding layer
224:外部包覆層 224: External cladding
w1:第一邊寬度 w 1 : first side width
w2:第二邊寬度 w 2 : width of the second side
w3:第三邊寬度,第三邊 w 3 : width of the third side, the third side
w4:第四邊寬度,第四邊 w 4 : width of the fourth side, the fourth side
h,D:尺寸 h, D: Dimensions
圖1A、圖1B和圖1C分別說明具有矩形支撐桿的傳統懸吊邊緣耦合器的頂視圖、局部放大視圖和正面剖視圖。 Figures 1A, 1B, and 1C illustrate a top view, a partially enlarged view, and a front cross-sectional view, respectively, of a conventional suspended edge coupler having a rectangular support rod.
圖2A、圖2B和圖2C分別說明根據本公開實施例具有等腰梯形覆蓋區支撐桿的懸吊邊緣耦合器的頂視圖、局部放大視圖和正面剖視圖。 Figures 2A, 2B, and 2C illustrate a top view, a partially enlarged view, and a front cross-sectional view, respectively, of a suspended edge coupler having an isosceles trapezoidal cover support rod according to an embodiment of the present disclosure.
圖2D說明圖2A、圖2B和圖2C中支撐桿的頂視圖。 Figure 2D illustrates a top view of the support rod in Figures 2A, 2B, and 2C.
圖3A、圖3B、圖3C和圖3D說明不同形狀的支撐桿。 Figures 3A, 3B, 3C, and 3D illustrate support rods of different shapes.
圖4說明傳統懸吊邊緣耦合器的測量光學損耗頻譜,該耦合器具有矩形支撐桿設計,其中w1=w2=2μm,以及其中一個實施例的等腰梯形氧化物支撐桿設計具有設計參數w1=2μm和w2=10μm。 FIG4 illustrates the measured optical loss spectra of a conventional suspended edge coupler having a rectangular support bar design with w 1 =w 2 =2 μm, and an isosceles trapezoidal oxide support bar design of one embodiment having design parameters w 1 =2 μm and w 2 =10 μm.
在以下描述中,為了提供對各種說明性和非限制性實施 例的透徹理解,列出了許多具體細節。然而,所屬技術領域中具有通常知識者將理解,可以在不具備某些或全部這些具體細節的情況下實踐本發明的實施例。應理解,此處使用的術語僅用於描述特定實施例,並非旨在限制本發明的範圍。在附圖中,相同或相似的參考符號或標號在幾個視圖中指代相同或相似的功能或特徵。 In the following description, numerous specific details are set forth to provide a thorough understanding of various illustrative and non-limiting embodiments. However, one skilled in the art will appreciate that embodiments of the present invention may be practiced without some or all of these specific details. It should be understood that the terminology used herein is for describing particular embodiments only and is not intended to limit the scope of the present invention. In the drawings, the same or similar reference symbols or numerals refer to the same or similar functions or features throughout the several views.
在其中一種裝置或方法背景下描述的實施例對其他裝置或方法類似有效。同樣地,在裝置背景下描述的實施例對方法類似有效,反之亦然。 Embodiments described in the context of one device or method are analogously valid for the other device or method. Likewise, embodiments described in the context of a device are analogously valid for the method, and vice versa.
在一個實施例背景下描述的特徵可相應地適用於其他實施例中相同或相似的特徵。在一個實施例背景下描述的特徵可相應地適用於其他實施例,即使在這些其他實施例中沒有明確描述。此外,在一個實施例背景下描述的特徵的附加和/或組合和/或替代可相應地適用於其他實施例中相同或相似的特徵。 Features described in the context of one embodiment may be applied accordingly to the same or similar features in other embodiments. Features described in the context of one embodiment may be applied accordingly to other embodiments, even if not explicitly described in those other embodiments. Furthermore, additions, combinations, and/or substitutions of features described in the context of one embodiment may be applied accordingly to the same or similar features in other embodiments.
應理解,用於特徵或元件的冠詞「一」、「一」和「所述」包括對一個或多個特徵或元件的引用。術語「和/或」包括相關特徵或元件的任何和所有組合。描述和權利要求中使用的術語「包括」、「包括」、「具有」及其相關術語旨在是開放式的,意味著可能存在除列出的特徵或元件之外的其他特徵或元件。諸如「第一」、「第二」、「第三」等標識符僅作為標籤使用,並非旨在對其對象施加數字要求,也不應以對限制施加任何相對位置或時間順序的方式解釋。術語「以」可包括對「用於」、「適於」和 「建構與安排以」的引用,這些術語可互換使用。 It should be understood that the articles "a," "an," and "said" used with respect to features or elements include reference to one or more features or elements. The term "and/or" includes any and all combinations of the relevant features or elements. The terms "including," "comprising," "having," and related terms used in the description and claims are intended to be open-ended, meaning that there may be additional features or elements other than the listed features or elements. Designators such as "first," "second," and "third" are used merely as labels and are not intended to impose numerical requirements on their objects, nor should they be interpreted in a manner that imposes any relative position or temporal sequence on the limitations. The term "to" may include reference to "for," "suitable for," and "constructed and arranged to," and these terms may be used interchangeably.
鑑於現有方法,仍然需要改善懸吊邊緣耦合器的機械堅硬度和穩固性,同時不降低其耦合性能。因此,此處披露的懸吊邊緣耦合器提供了一種解決方案,通過氧化物支撐桿來改善懸吊邊緣耦合器的機械堅硬度,其中與懸吊氧化物波導相接的邊緣上支撐桿寬度比與大塊包覆層相接的相對邊緣上支撐桿寬度窄。 Given existing approaches, there remains a need to improve the mechanical robustness and stability of suspended edge couplers without compromising coupling performance. Therefore, the suspended edge coupler disclosed herein provides a solution to improve the mechanical robustness of a suspended edge coupler by employing oxide support rods, wherein the support rods on the edge that interfaces with the suspended oxide waveguide are narrower than the support rods on the opposing edge that interfaces with the bulk cladding.
本揭露的實施例提供適用於在以絕緣層上矽(silicon-on-insulator)為基礎的光子學平台上構建的光子波導中使用的光學邊緣耦合器。 Embodiments of the present disclosure provide optical edge couplers suitable for use in photonic waveguides constructed on a silicon-on-insulator-based photonics platform.
圖2A、圖2B和圖2C展示了具有等腰梯形覆蓋區支撐桿的懸吊邊緣耦合器200實施例的各種視圖。 Figures 2A, 2B, and 2C illustrate various views of an embodiment of a suspended edge coupler 200 having an isosceles trapezoidal footprint support rod.
邊緣耦合器200包括懸吊或第一波導202、頂部氧化物包覆層212、底部氧化物包覆層214(又稱為埋氧化物(BOX)層)、縱向排列的週期性隔離溝槽204、橫向排列的週期性支撐桿206、反向錐208和基板216。 The edge coupler 200 includes a suspended or first waveguide 202, a top oxide cladding layer 212, a bottom oxide cladding layer 214 (also known as a buried oxide (BOX) layer), vertically arranged periodic isolation trenches 204, laterally arranged periodic support bars 206, an inverted taper 208, and a substrate 216.
懸吊波導202包括縱向(圖2A中所示的z方向)對應於光信號或光傳播的軸線,以及與縱向垂直的橫向(圖2A中所示的x方向)。波導202包括相對的側壁,每個側壁沿著或基本沿著縱向延伸。波導202包括相對的端部,例如第一端和第二端,其中光從第一端向第二端傳播。波導202排列或插入縱向排列的兩行週期性隔離溝槽204之間,例如,同一縱向溝槽行中每對相鄰隔離溝槽204由支撐桿206分隔。隔離溝槽204沿著或基 本沿著縱向延伸。波導202包括沿縱向逐漸變窄的橫向尺寸D,例如,波導202在其第一端的橫向尺寸大於其第二端。在某些例子中,波導202的最小橫向尺寸可能2μm,因為更小的值可能導致橫向相鄰溝槽之間的區域非常薄或完全蝕刻。這種結果產生的非常薄的結構可能隨後在約6μm厚的氧化物層下崩塌。應當理解,波導202的最小橫向尺寸可能根據製造規格而變化。 The suspended waveguide 202 includes a longitudinal direction (the z-direction shown in FIG. 2A ), corresponding to the axis along which optical signals or light propagate, and a transverse direction (the x-direction shown in FIG. 2A ) perpendicular to the longitudinal direction. The waveguide 202 includes opposing sidewalls, each of which extends along or substantially along the longitudinal direction. The waveguide 202 includes opposing ends, such as a first end and a second end, wherein light propagates from the first end to the second end. The waveguide 202 is arranged or interposed between two rows of periodic isolation trenches 204 arranged in the longitudinal direction. For example, each pair of adjacent isolation trenches 204 in the same longitudinal trench row is separated by a support bar 206. The isolation trenches 204 extend along or substantially along the longitudinal direction. The waveguide 202 includes a transverse dimension D that tapers longitudinally, for example, the transverse dimension of the waveguide 202 at a first end is greater than that at a second end. In some examples, the minimum transverse dimension of the waveguide 202 may be 2 μm, as smaller values may result in very thin or completely etched regions between laterally adjacent trenches. The resulting very thin structures may subsequently collapse under the approximately 6 μm thick oxide layer. It should be understood that the minimum lateral dimension of waveguide 202 may vary depending on manufacturing specifications.
頂部氧化物包覆層212和底部氧化物包覆層214(或BOX層)(統稱包覆層212、214)沿著或基本沿著縱向延伸。包覆層212、214包括至少兩個區域:內部包覆層222,其定義在縱向排列的兩行週期性溝槽之間並提供懸吊波導202,以及外部包覆層224,其通過週期性排列的側向支撐桿206與內部包覆層222間隔開,並為懸吊波導202提供支撐。內部包覆層222和外部包覆層224通過側向支撐桿206相互連接。 The top oxide cladding layer 212 and the bottom oxide cladding layer 214 (or BOX layer) (collectively, cladding layers 212, 214) extend along or substantially along the longitudinal direction. Cladding layers 212, 214 include at least two regions: an inner cladding layer 222, which is defined between two rows of periodic trenches arranged in the longitudinal direction and provides a suspension for waveguide 202; and an outer cladding layer 224, which is separated from the inner cladding layer 222 by periodic lateral support rods 206 and provides support for the suspension for waveguide 202. The inner cladding layer 222 and the outer cladding layer 224 are interconnected by the lateral support rods 206.
側向支撐桿206排列或插入相鄰溝槽204之間。每個支撐桿206在橫向延伸並互連懸吊波導202和外部包覆層224。因此,所述多個側向支撐桿206分別排列或插入隔離溝槽204之間,互連波導202和外部包覆層224,為懸吊的波導202提供機械支撐。每個支撐桿206具有相對的端部,例如第一端和第二端,其中第一端附著於懸吊波導202(或內部包覆層222)並包括與懸吊波導202接觸的第一邊寬度w1,而第二端附著於外部包覆層224並包括與外部包覆層224接觸的第二邊寬度w2。每個支撐桿206具有覆蓋區(見圖2D),其至少包括第一邊寬度w1和 第二邊寬度w2。第二邊寬度w2大於第一邊寬度w1。換句話說,第一邊寬度w1比第二邊寬度w2窄。第一邊寬度w1位於更靠近波導的位置,可能盡可能窄以防止模式擾動,而第二邊寬度w2比第一邊寬度w1寬,以改善邊緣耦合器結構的機械堅硬度和可靠性。覆蓋區可進一步包括第三邊寬度w3和第四邊寬度w4,分別與相鄰的溝槽204接觸。在本公開中,術語「覆蓋區」包括從平面視圖看到的區域的參考。 The lateral support rods 206 are arranged or inserted between adjacent trenches 204. Each support rod 206 extends laterally and interconnects the suspended waveguide 202 and the outer cladding layer 224. Therefore, the plurality of lateral support rods 206 are respectively arranged or inserted between the isolation trenches 204, interconnecting the waveguide 202 and the outer cladding layer 224, and providing mechanical support for the suspended waveguide 202. Each support rod 206 has opposing ends, such as a first end and a second end, wherein the first end is attached to the suspension waveguide 202 (or the inner cladding 222) and includes a first side width w1 that contacts the suspension waveguide 202, and the second end is attached to the outer cladding 224 and includes a second side width w2 that contacts the outer cladding 224. Each support rod 206 has a footprint (see FIG. 2D ) that includes at least the first side width w1 and a second side width w2 . The second side width w2 is greater than the first side width w1 . In other words, the first side width w1 is narrower than the second side width w2 . The first side width w1 is located closer to the waveguide and is as narrow as possible to prevent mode perturbations, while the second side width w2 is wider than the first side width w1 to improve the mechanical robustness and reliability of the edge coupler structure. The footprint may further include a third side width w3 and a fourth side width w4 , each of which contacts the adjacent trench 204. In this disclosure, the term "footprint" includes reference to an area viewed from a plan view.
基板216提供有腔體218。腔體218與隔離溝槽204流體連通。波導202懸吊在腔體218之上,並由排列在波導202相對側壁的支撐桿206支撐。支撐桿206互連波導202和外部包覆層224。外部包覆層224的至少一部分是非懸吊的,例如由基板216支撐。 The substrate 216 provides a cavity 218. The cavity 218 is in fluid communication with the isolation trench 204. The waveguide 202 is suspended from the cavity 218 and supported by support rods 206 arranged on opposite side walls of the waveguide 202. The support rods 206 interconnect the waveguide 202 and the outer cladding 224. At least a portion of the outer cladding 224 is non-suspended, for example supported by the substrate 216.
反向錐208,可能是反向錐形波導或第二波導210的一部分,嵌入懸吊波導202中並沿縱向最多部分延伸其中,特別是從波導202第一端和第二端之間的中間位置朝向波導202的第二端。反向錐208在中間位置較窄,在波導202的第二端較寬。當光從中間位置朝向波導202的第二端傳播時,錐208促進光從懸吊波導202到與之耦合的反向錐形波導210的絕熱耦合。 The inverted cone 208, which may be part of the inverted cone waveguide or the second waveguide 210, is embedded in the suspended waveguide 202 and extends longitudinally therein for the longest portion thereof, particularly from a midpoint between the first and second ends of the waveguide 202 toward the second end of the waveguide 202. The inverted cone 208 is narrower at the midpoint and wider at the second end of the waveguide 202. The cone 208 facilitates adiabatic coupling of light from the suspended waveguide 202 to the coupled inverted cone waveguide 210 as light propagates from the midpoint toward the second end of the waveguide 202.
在一些實施例中,懸吊波導202、包覆層212、214和支撐桿206由二氧化矽構成。基板216和反向錐208由矽構成。溝槽204和腔體218包含空氣。在其他實施例中,反向錐208可由氮化矽(silicon nitride,SiN)、氮化鋁(aluminium nitride, AlN)或任何其他具有比第一波導202更高折射率的材料構成。 In some embodiments, the suspended waveguide 202, cladding layers 212 and 214, and support rod 206 are made of silicon dioxide. The substrate 216 and inverted cone 208 are made of silicon. The trench 204 and cavity 218 contain air. In other embodiments, the inverted cone 208 may be made of silicon nitride (SiN), aluminum nitride (AlN), or any other material with a higher refractive index than the first waveguide 202.
在一些實施例中(見圖2A至2D),每個支撐桿206的覆蓋區包括一個等腰梯形。在本揭露中,等腰梯形通常被理解為具有兩個不等尺寸或長度的平行邊和兩個等尺寸或長度的非平行邊的四邊形。特別是,在這些實施例中,輪廓的第一邊寬度w1和第二邊寬度w2對應於兩個不等尺寸或長度的平行邊,而輪廓的第三邊寬度w3和第四邊寬度w4對應於兩個等尺寸或長度的非平行邊。 In some embodiments (see Figures 2A-2D), the footprint of each support rod 206 comprises an isosceles trapezoid. In the present disclosure, an isosceles trapezoid is generally understood to be a quadrilateral having two parallel sides of unequal size or length and two non-parallel sides of equal size or length. In particular, in these embodiments, the first side width w1 and the second side width w2 of the outline correspond to the two parallel sides of unequal size or length, while the third side width w3 and the fourth side width w4 of the outline correspond to the two non-parallel sides of equal size or length.
在一些實施例中,每個支撐桿206的輪廓包括一個梯形。在本揭露中,梯形通常被理解為具有兩個不等尺寸或長度的平行邊和兩個不等尺寸或長度的非平行邊的四邊形。特別是,在這些實施例中,輪廓的第一邊寬度w1和第二邊寬度w2對應於兩個不等尺寸或長度的平行邊,而輪廓的第三邊寬度w3和第四邊寬度w4對應於兩個不等尺寸或長度的非平行邊。 In some embodiments, the outline of each support rod 206 comprises a trapezoid. In this disclosure, a trapezoid is generally understood to be a quadrilateral having two parallel sides of unequal size or length and two non-parallel sides of unequal size or length. Specifically, in these embodiments, the first side width w1 and the second side width w2 of the outline correspond to the two parallel sides of unequal size or length, while the third side width w3 and the fourth side width w4 of the outline correspond to the two non-parallel sides of unequal size or length.
在一些實施例中(見圖3A和圖3B),每個支撐桿206的輪廓包括所述多個並列或堆疊的不同尺寸或長度的矩形,例如,兩個不同長度的矩形、三個不同長度的矩形等。 In some embodiments (see FIG. 3A and FIG. 3B ), the outline of each support rod 206 includes the plurality of parallel or stacked rectangles of different sizes or lengths, for example, two rectangles of different lengths, three rectangles of different lengths, etc.
在一些實施例中(見圖3C和圖3D),第三邊w3和/或第四邊w4包括圓形、橢圓形、拋物線或雙曲線的弧線。從上述一個或多個例子中選擇的第三邊w3和第四邊w4可相對於彼此對稱或不對稱。 In some embodiments (see FIG. 3C and FIG. 3D ), the third side w 3 and/or the fourth side w 4 include arcs of a circle, an ellipse, a parabola, or a hyperbola. The third side w 3 and the fourth side w 4 selected from one or more of the above examples may be symmetrical or asymmetrical relative to each other.
在一些實施例中,第三邊w3和第四邊w4可相對於彼此 對稱或不對稱。 In some embodiments, the third side w3 and the fourth side w4 may be symmetrical or asymmetrical with respect to each other.
在一些實施例中,第二邊寬度w2可為第一邊寬度w1的倍數。第一邊寬度w1與第二邊寬度w2的比率可被配置為提供一個角度,該角度位於第三邊與鄰近第一邊寬度w1的其中一個隔離溝槽的邊緣之間,且該角度大於45度。 In some embodiments, the second side width w 2 may be a multiple of the first side width w 1. The ratio of the first side width w 1 to the second side width w 2 may be configured to provide an angle between the third side and an edge of one of the isolation trenches adjacent to the first side width w 1 , the angle being greater than 45 degrees.
圖2D顯示支撐桿的等腰梯形覆蓋區具有以下參數:w1=第一邊寬度,w2=第二邊寬度,w3=第三邊寬度,w4=第四邊寬度,α=角度,位於第三邊與鄰近第一邊寬度的其中一個溝槽的邊緣之間,h=鄰近第一邊寬度w1和第二邊寬度w2的每個或一個溝槽的尺寸,並且在橫向方向上測量(或稱為「橫向尺寸」),2d=第二邊寬度w2與第一邊寬度w1之間的差異。因此,前述參數之間的關係可表示如下:w 2=2d+w 1,d=0.5(w 2-w 1),
如果角度α的設計值非常小或尖銳,在製造過程中蝕刻劑無法滲透到尖角處,這將導致這些角落產生圓角效應。圓角效 應將導致製造出的支撐桿邊寬度大於設計邊寬度。 If the angle α is designed to be very small or sharp, the etchant won't be able to penetrate the sharp corners during manufacturing, causing these corners to be rounded. This rounding effect will cause the manufactured support bar to have a wider side width than the designed side width.
在一些實施例中,提供大於45度的角度α。因此,第一邊寬度w1、第二邊寬度w2和每個溝槽的橫向尺寸h基於以下關係:arctan>45°。 In some embodiments, an angle α greater than 45 degrees is provided. Thus, the first side width w 1 , the second side width w 2 , and the transverse dimension h of each trench are based on the following relationship: arctan >45°.
應當理解,可以設想其他角度α的值,例如90度。 It should be understood that other values of angle α are contemplated, such as 90 degrees.
應當理解,上述參數和關係適用於其他形狀的平面圖,只需進行適當的調整。 It should be understood that the above parameters and relationships are applicable to floor plans of other shapes with appropriate adjustments.
圖4顯示在C波段測量的光學損耗頻譜,分別對應於具有矩形支撐桿設計的傳統懸吊邊緣耦合器(其中w1=w2=2μm),以及本實施例中具有等腰梯形氧化物支撐桿設計的一個實施例(其設計參數為w1=2μm和w2=10μm)。與傳統設計相比,本揭露的實施例並未造成任何額外的耦合損耗,表明它不會擾亂通過懸吊氧化物波導的光傳播,例如光場不會洩漏到支撐桿中。因此,本揭露的實施例提供了懸吊邊緣耦合器設計,可改善邊緣耦合器的機械堅硬度,而不會降低其耦合性能。 Figure 4 shows the optical loss spectra measured in the C-band for a conventional suspended edge coupler with a rectangular support rod design (where w 1 = w 2 = 2 μm) and an embodiment of the present invention with isosceles trapezoidal oxide support rods (with design parameters of w 1 = 2 μm and w 2 = 10 μm). Compared to the conventional design, the disclosed embodiment does not incur any additional coupling loss, indicating that it does not disrupt light propagation through the suspended oxide waveguide. For example, the light field does not leak into the support rods. Therefore, the disclosed embodiment provides a suspended edge coupler design that improves the mechanical robustness of the edge coupler without degrading its coupling performance.
可以設想各種製造懸吊邊緣耦合器的方法。在一些實施例中,製造懸吊邊緣耦合器的方法包括:製作一個絕緣層上矽(silicon-on-insulator,SOI)結構,其中矽層形成在埋氧化層(buried oxide,BOX)上,而埋氧化層形成在矽基板上。該方法還包括:在SOI結構上形成頂部包覆層。該方法還包括:對頂部包覆層和SOI結構進行圖案蝕刻,形成縱向排列的兩行周期性隔 離溝槽,以定義位於縱向排列的兩行周期性隔離溝槽之間的內部包覆層,由縱向排列的周期性隔離溝槽中的一個與內部包覆層分開的外部包覆層,以及連接內部包覆層和外部包覆層的側向支撐桿。這個圖案蝕刻步驟可以在不蝕刻矽基板的情況下進行。該方法還包括:對矽基板進行各向同性蝕刻,以使內部包覆層懸吊,從而提供懸吊波導。在上述圖案蝕刻步驟中,包括形成每個支撐桿,其包括具有與懸吊波導接觸的第一邊寬度,以及與外部包覆層接觸的第二邊寬度的平面圖,其中第二邊寬度大於第一邊寬度,並且其中第一波導包括第二波導的反向錐。製造的懸吊波導的其他特徵已在前面段落中關於圖示進行了描述,因此不再重複描述這些特徵。 Various methods of fabricating a suspended edge coupler are contemplated. In some embodiments, the method includes fabricating a silicon-on-insulator (SOI) structure, wherein a silicon layer is formed on a buried oxide (BOX) layer, which is formed on a silicon substrate. The method also includes forming a top cladding layer on the SOI structure. The method also includes pattern etching the top cladding layer and the SOI structure to form two rows of periodic isolation trenches arranged vertically to define an inner cladding layer located between the two rows of periodic isolation trenches, an outer cladding layer separated from the inner cladding layer by one of the periodic isolation trenches, and lateral support rods connecting the inner and outer cladding layers. This pattern etching step can be performed without etching the silicon substrate. The method also includes isotropically etching the silicon substrate to suspend the inner cladding layer, thereby providing a suspended waveguide. The pattern etching step includes forming each support rod, which includes a planar surface having a first side width in contact with the suspended waveguide and a second side width in contact with the outer cladding layer, wherein the second side width is greater than the first side width, and wherein the first waveguide includes an inverted taper of the second waveguide. Other features of the fabricated suspended waveguide have been described in the previous paragraphs with respect to the figures, and therefore, these features will not be repeated.
應當理解,上述描述的實施例和特徵應被視為示例性的而非限制性的。對所屬技術領域中具有通常知識者而言,從對說明書的考慮和發明的實踐中,將會顯而易見許多其他實施例。此外,某些術語的使用僅出於描述清晰的目的,而非為了限制本發明所揭露的實施例。 It should be understood that the embodiments and features described above are to be considered illustrative rather than restrictive. Many other embodiments will become apparent to those skilled in the art from consideration of this specification and practice of the invention. Furthermore, certain terminology is used for descriptive purposes only and is not intended to limit the disclosed embodiments of the invention.
200:邊緣耦合器 200:Edge Coupler
202:波導 202: Waveguide
204:溝槽 204: Groove
206:支撐桿 206: Support rod
208:錐 208: Cone
210:波導 210: Waveguide
D:尺寸 D: Dimensions
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| EP3117252B1 (en) * | 2014-04-11 | 2023-01-04 | Huawei Technologies Co., Ltd. | Suspended ridge oxide waveguide |
| EP3545346B1 (en) * | 2016-12-22 | 2023-04-26 | Huawei Technologies Co., Ltd. | Optical edge coupler with controllable mode field for photonic chip |
| CN114442224A (en) * | 2020-11-06 | 2022-05-06 | 格芯(美国)集成电路科技有限公司 | Edge coupler comprising material with tunable refractive index |
| CN114690310A (en) * | 2020-12-30 | 2022-07-01 | 格芯(美国)集成电路科技有限公司 | Edge coupler including a grooved film |
| CN116880009A (en) * | 2023-07-17 | 2023-10-13 | 中国科学院上海微系统与信息技术研究所 | Silicon carbide micro-disk resonator, preparation method and optical communication equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202519915A (en) | 2025-05-16 |
| WO2025101120A1 (en) | 2025-05-15 |
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