TWI886819B - Test socket structure - Google Patents
Test socket structure Download PDFInfo
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- TWI886819B TWI886819B TW113107315A TW113107315A TWI886819B TW I886819 B TWI886819 B TW I886819B TW 113107315 A TW113107315 A TW 113107315A TW 113107315 A TW113107315 A TW 113107315A TW I886819 B TWI886819 B TW I886819B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07357—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with flexible bodies, e.g. buckling beams
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- General Physics & Mathematics (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
本發明提供一種測試座之結構,其係於一基座之一上方表面至一下方表面穿複數個穿孔,該些個穿孔互相相鄰設置,複數個探針個別之一端對應滑設於該些個穿孔之其中之一,該些個探針個別之另一端設置一接觸部,該些個探針個別之該接觸部互相接觸電性導通,該些個探針抵接於待測物時,該些個探針個別之該接觸部互相電性導通,以減少個別探針供於待測物之電流差異。The present invention provides a structure of a test seat, which is a plurality of through holes from an upper surface to a lower surface of a base, the through holes are arranged adjacent to each other, one end of each of a plurality of probes is slidably arranged in one of the through holes, and a contact portion is arranged at the other end of each of the probes, and the contact portions of each of the probes are in electrical contact with each other. When the probes are in contact with an object to be tested, the contact portions of each of the probes are electrically connected to each other, so as to reduce the difference in current provided by the individual probes to the object to be tested.
Description
本發明是關於一種測試座之結構,尤其係指一種複數個探針接觸端互相接觸電性導通,以減少電流誤差之測試座。The present invention relates to a test socket structure, and more particularly to a test socket in which a plurality of probe contact ends are mutually contacted and electrically connected to reduce current error.
隨著電子科技和網路等相關技術的蓬勃發展,以及全球電子市場的不斷提升的消費水準,消費性電子產品的需求量迅速攀升,這帶動了半導體產業的繁榮發展。With the booming development of electronic technology and related technologies such as the Internet, as well as the ever-increasing consumption level of the global electronics market, the demand for consumer electronic products has risen rapidly, which has driven the prosperous development of the semiconductor industry.
半導體製造涉及多個關鍵步驟,包括IC設計、晶圓製程(wafer fabrication)、晶圓測試(wafer probe)、晶圓封裝(packaging)以及封裝後測試等。在這些步驟中,晶圓測試和封裝後測試的目的是對未切割的晶圓上的一個或多個晶粒,或者已經從晶圓上切割下來的一個或多個晶粒,進行電性功能的測試,以檢測並淘汰不合格的晶粒。Semiconductor manufacturing involves several key steps, including IC design, wafer fabrication, wafer probe, wafer packaging, and post-packaging testing. Among these steps, the purpose of wafer testing and post-packaging testing is to test the electrical functions of one or more dies on an uncut wafer, or one or more dies that have been cut from a wafer, in order to detect and eliminate unqualified dies.
通常,當半導體晶粒進行測試時,測試機需要透過測試座(Socket)來接觸待測物,換言之,測試座被視為測試機與待測物之間測試信號和電源信號的傳輸介面。同時,測試座與測試機通過控制和分析程式,以實現對待測物電性特徵的準確測量。這個測試座扮演著關鍵的角色,確保測試的精確性和可靠性,從而確保生產出優質的半導體元件。Usually, when semiconductor die are tested, the tester needs to contact the DUT through a test socket. In other words, the test socket is regarded as the transmission interface of the test signal and power signal between the tester and the DUT. At the same time, the test socket and the tester use control and analysis programs to achieve accurate measurement of the electrical characteristics of the DUT. This test socket plays a key role in ensuring the accuracy and reliability of the test, thereby ensuring the production of high-quality semiconductor components.
習知測試座大致由二零件組成:一是插座本體,一種由金屬或是塑膠製成的元件,含有精密的切割腔體;二是插入測試座穿孔的彈簧探針,提供可伸縮的電路徑,將晶片連接到測試系統,其中探針通常為複數個並密集排列,以確保可接觸待測物上的導電元件。It is known that the test socket is generally composed of two parts: one is the socket body, a component made of metal or plastic with a precision cut cavity; the other is the spring probe inserted into the perforation of the test socket, providing a retractable electrical path to connect the chip to the test system. The probes are usually multiple and densely arranged to ensure that they can contact the conductive components on the object under test.
但習知測試座於較高電流時,複數個探針所流經的電流會逐漸產生差異,導致每一探針流經之電流皆不相同,其因電流會擇阻抗較低之探針,從而導致部分探針承受較高電流而產生較高溫度,而探針阻抗與電流分布不平均以及產生高溫,會直接影響待測物檢測之結果及損毀測試座,導致測試結果不準確,因此產業界需要一種能平均電流之測試座結構。However, it is known that when the test socket is at a higher current, the current flowing through multiple probes will gradually become different, resulting in different currents flowing through each probe. This is because the current will select the probe with lower impedance, causing some probes to withstand higher currents and generate higher temperatures. The uneven distribution of probe impedance and current and the high temperature will directly affect the results of the DUT detection and damage the test socket, resulting in inaccurate test results. Therefore, the industry needs a test socket structure that can average the current.
有鑑於上述習知技術之問題,本發明提供一種測試座之結構,其係基座之複數個探針個別之接觸部互相接觸並導通,提供能減少探針個別電流差異之測試座。In view of the above problems of the prior art, the present invention provides a test socket structure in which the individual contact parts of a plurality of probes of the base are in contact with each other and are conductive, providing a test socket capable of reducing the difference in individual current of the probes.
本發明之一目的在於提供一種測試座之結構,其係基座滑設複數個探針,複數個探針個別之接觸部互相接觸並導通,藉由互相電性導通之接觸部,使探針個別之阻抗降低,減少供於待測物之電流差異,進一步降低探針產生之溫度。One purpose of the present invention is to provide a test socket structure in which a plurality of probes are slidably mounted on a base, and individual contact portions of the plurality of probes are in contact with and conductive to each other. Through the mutually electrically conductive contact portions, the impedance of the individual probes is reduced, the current difference supplied to the object to be tested is reduced, and the temperature generated by the probes is further reduced.
為達到上述所指稱之各目的與功效,本發明提供一種測試座之結構,其包含一基座以及複數個探針,該基座之一上方表面至一下方表面穿設複數個穿孔,該些個穿孔互相相鄰設置,複數個探針個別之一端對應滑設於該些個穿孔之其中之一,該些個探針個別之另一端設置一接觸部,該些個探針個別之該接觸部互相接觸電性導通;以此結構減少個別探針供於待測物之電流差異。In order to achieve the above-mentioned purposes and effects, the present invention provides a test seat structure, which includes a base and a plurality of probes. A plurality of through holes are formed from an upper surface to a lower surface of the base, and the through holes are disposed adjacent to each other. One end of each of the plurality of probes is slidably disposed in one of the through holes, and a contact portion is disposed at the other end of each of the plurality of probes. The contact portions of each of the plurality of probes are in electrical contact with each other. With this structure, the current difference provided by each of the probes to the object to be tested is reduced.
本發明之一實施例中,其中該基座之該上方表面之部分下凹形成一容置槽,該些個探針個別之該端凸出於該上方表面,該些個探針個別之該端延伸至該容置槽。In one embodiment of the present invention, a portion of the upper surface of the base is recessed to form a receiving groove, and the ends of the probes protrude from the upper surface and extend to the receiving groove.
本發明之一實施例中,其中該容置槽之一上方蓋設一板件,該些個探針個別之該端穿設該板件。In an embodiment of the present invention, a plate is disposed on top of one of the accommodating grooves, and the ends of the respective probes penetrate the plate.
本發明之一實施例中,其中該些個探針個別套設一彈性件,該彈性件之一端抵接該板件之一下方,該彈性件之另一端抵接該些個探針,該彈性件其係用於提供下推力至該些個探針。In one embodiment of the present invention, each of the probes is sleeved with an elastic member, one end of the elastic member abuts against a lower portion of the plate, and the other end of the elastic member abuts against the probes, and the elastic member is used to provide a downward thrust to the probes.
本發明之一實施例中,更包含複數個墊片,該些個墊片個別對應套設該些個探針個別之該端,且該些個墊片之一下方抵接該板件之一上方。In an embodiment of the present invention, a plurality of gaskets are further included. The gaskets are respectively sleeved on the ends of the probes, and a bottom of one of the gaskets abuts against an upper part of the plate.
本發明之一實施例中,其中該些個探針個別之該端設置一限位槽,該些個墊片個別設置於該些個探針個別之該限位槽。In an embodiment of the present invention, a limiting groove is disposed at the end of each of the probes, and each of the pads is disposed in the limiting groove of each of the probes.
本發明之一實施例中,其中該些個探針個別之該接觸部係一六角柱體,該些個探針個別之該接觸部互相接觸電性導通。In one embodiment of the present invention, the contact portion of each of the probes is a hexagonal column, and the contact portions of each of the probes are in electrical contact with each other.
本發明之一實施例中,其中該些個探針個別之該接觸部之一下方設置複數個凸塊結構。In one embodiment of the present invention, a plurality of bump structures are disposed below one of the contact portions of each of the probes.
本發明之一實施例中,其中該基座以及該些個探針係一導電材料。In one embodiment of the present invention, the base and the probes are made of a conductive material.
本發明之一實施例中,其中個別之該些個探針之一移動距離小於個別之該些個探針之該接觸部之一高度。In an embodiment of the present invention, a moving distance of each of the probes is smaller than a height of the contact portion of each of the probes.
為使 貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識,謹佐以實施例及配合說明,說明如後:In order to enable you to have a deeper understanding and knowledge of the features and effects of the present invention, we would like to provide practical examples and accompanying explanations as follows:
有鑑於上述習知技術之問題,本發明係其係一種測試座之結構,其係於一基座之一上方表面至一下方表面穿複數個穿孔,該些個穿孔互相相鄰設置,複數個探針個別之一端對應滑設於該些個穿孔之其中之一,該些個探針個別之另一端設置一接觸部,該些個探針個別之該接觸部互相接觸電性導通,該些個探針抵接於待測物時,該些個探針個別之該接觸部互相電性導通,解決習知技術測試座探針電流傳導不平均,並產生高溫之問題。In view of the above-mentioned problems of the prior art, the present invention is a structure of a test seat, which is a plurality of through holes from an upper surface to a lower surface of a base, and the through holes are arranged adjacent to each other. One end of each of a plurality of probes is slidably arranged in one of the through holes, and a contact portion is arranged at the other end of each of the probes. The contact portions of each of the probes are in contact with each other and electrically conductive. When the probes abut against the object to be tested, the contact portions of each of the probes are electrically conductive with each other, thereby solving the problem of uneven current conduction and high temperature generated by the probes of the prior art test seat.
請參閱第1圖,其為本發明之一實施例之結構爆炸示意圖,如圖所示,本實施例係第一實施例,本實施例係一種測試座之結構1,其包含一基座10以及複數個探針20。Please refer to FIG. 1 , which is a schematic exploded view of the structure of an embodiment of the present invention. As shown in the figure, this embodiment is the first embodiment. This embodiment is a
再次參閱第1圖並參閱第2A圖以及第2B圖,第2A圖為本發明之一實施例之結構側視示意圖,第2B圖為本發明之一實施例之結構側視放大示意圖,如圖所示,於本實施例中,該基座10之一上方表面11至一下方表面12穿設複數個穿孔14,且該些個穿孔14互相相鄰設置,該些個探針20個別之一端對應滑設於該些個穿孔14之其中之一,該些個探針20個別之另一端設置一接觸部22,該些個探針20個別之該接觸部22互相接觸並導通。Refer to Figure 1 again and refer to Figure 2A and Figure 2B. Figure 2A is a schematic side view of the structure of an embodiment of the present invention, and Figure 2B is an enlarged schematic side view of the structure of an embodiment of the present invention. As shown in the figure, in this embodiment, a plurality of through
接續上述,於第2A圖及第2B圖中,虛線之部分係表示後方之探針。Continuing from the above, in FIG. 2A and FIG. 2B, the dotted line portion represents the rear probe.
接續上述,於本實施例中,該基座10以及該些個探針20係一導電材料,使該些個探針20個別與該基座10互相電性導通。Continuing with the above, in this embodiment, the
請參閱第3A圖至第3B圖,第3A圖至第3B圖:其為本發明之一實施例之結構作動示意圖,如圖所示,於本實施例中,該測試座之結構1用於測試一待測物30,該待測物30設置一第一導電件32以及一第二導電件34,該第一導電件32係較該第二導電件34凸出之導電元件,用於表示該待測物30上不同高度之導電元件。Please refer to Figures 3A to 3B, which are schematic diagrams of the structural operation of an embodiment of the present invention. As shown in the figure, in this embodiment, the
接續上述,當該測試座之結構1用於測試時,該基座10向該待測物30移動,並帶動該些個探針20移動,該些個探針20移動至該待測物30時,一部分之該些個探針20先抵接到較凸出之該第一導電件32,而後另一部份之該些個探針20抵接較低之該第二導電件34,使該些個探針20互相形成落差,於本實施例中,個別之該些個探針20之該接觸部22具有之一高度H1,於上述測試該待測物30並移動時,個別之該些個探針20移動一移動距離H2,該移動距離H2係指一部份抵接於該第一導電件32之探針20與另一部份抵接於該第二導電件34之探針20之落差(如第3B圖所示),其中該移動距離H2小於該高度H1,避免落差過大,使該些個探針20之該接觸部22不互相接觸。Continuing from the above, when the
本實施例之該些個探針20互相接觸可平衡、降低個別之阻抗,平衡每個該些個探針20之阻抗後,可避免電流不均流之狀況發生,降低阻抗後亦可提升整體耐電流量與降低發熱量。The
請參閱第4A圖,其為本發明之一實施例之接觸部結構示意圖,第4A圖係仰視圖,如圖所示,於本實施例中,該些個探針20個別之該接觸部22係一六角柱體,呈六角柱體之該接觸部22密鋪(平面填充)該下方表面12,且該些個探針20個別之該接觸部22互相面接觸,使其互相電性導通。Please refer to FIG. 4A, which is a schematic diagram of the contact portion structure of an embodiment of the present invention. FIG. 4A is a bottom view. As shown in the figure, in this embodiment, the
請參閱第4B圖,其為本發明之另一實施例之接觸部結構示意圖,第4B圖係仰視圖,如圖所示,於該接觸部22之另一實施例中,該些個探針20個別之該接觸部22係一四角柱體,呈四角柱體之該接觸部22密鋪(平面填充)該下方表面12,且該些個探針20個別之該接觸部22互相面接觸,使其互相電性導通,本實施例之其他元件關係皆與上述第一實施例相同,故不再贅述。Please refer to FIG. 4B, which is a schematic diagram of the contact portion structure of another embodiment of the present invention. FIG. 4B is a bottom view. As shown in the figure, in another embodiment of the
請參閱第4C圖,其為本發明之再一實施例之接觸部結構示意圖,第4C圖係仰視圖,如圖所示,於該接觸部22之再一實施例中,該些個探針20個別之該接觸部22係一圓柱體,呈圓柱體之該接觸部22排列於該下方表面12,且該些個探針20個別之該接觸部22互相線接觸,使其互相電性導通,本實施例之其他元件關係皆與上述第一實施例相同,故不再贅述。Please refer to FIG. 4C, which is a schematic diagram of the contact portion structure of another embodiment of the present invention. FIG. 4C is a bottom view. As shown in the figure, in another embodiment of the
請參閱第5圖、第6A圖以及第6B圖,第5圖為本發明之一實施例之其他結構示意圖,第6A圖為本發明之一實施例之其他結構側視示意圖,第6B圖為本發明之一實施例之其他結構側視放大示意圖,如圖所示,本實施例係第二實施例,其係基於上述第一實施例,於本實施例中,該基座10更包含一容置槽16以及一板件18,該些個探針20個別套設一彈性件24,複數個墊片26個別套設該些個探針20之其中之一。Please refer to Figure 5, Figure 6A and Figure 6B, Figure 5 is a schematic diagram of other structures of an embodiment of the present invention, Figure 6A is a schematic side view of other structures of an embodiment of the present invention, and Figure 6B is an enlarged schematic side view of other structures of an embodiment of the present invention. As shown in the figure, this embodiment is a second embodiment, which is based on the above-mentioned first embodiment. In this embodiment, the base 10 further includes a accommodating groove 16 and a
接續上述,該基座10之該上方表面11之部分下凹形成該容置槽16,該些個探針20個別之該端凸出於該上方表面11,該些個探針20個別之該端延伸至該容置槽16,該容置槽16之一上方蓋設該板件18,該些個探針20個別之該端穿設該板件18。Continuing from the above, a portion of the
接續上述,該板件18用於調整該些個探針20之位置,避免該些個探針20彎曲位移影響測試結果。Continuing from the above, the
接續上述,該些個探針20個別套設該彈性件24,該彈性件24之一端抵接該板件18之一下方,該彈性件24之另一端抵接該些個探針20,該彈性件24設置於該容置槽16內,以該彈性件24提供下推力至該些個探針20,避免該些個探針20於測試時位移,導致接觸不良。Continuing from the above, the
接續上述,該彈性件24之該另一端可以焊接至該些個探針20,或該彈性件24之該另一端抵接該些個探針20之限位槽。Continuing with the above, the other end of the
接續上述,該些個墊片26個別對應套設該些個探針20個別之該端,且該些個墊片26之一下方抵接該板件18之一上方,該些個墊片26可進一步防止該些個探針20於該板件18以及該基座10滑落。Continuing from the above, the
接續上述,進一步,該些個探針20個別之該端設置一限位槽28,該些個墊片26個別設置於該些個探針20個別之該限位槽28,以確實固定該些個墊片26以及該些個探針20,本實施例之其他元件關係皆與上述第一實施例相同,故不再贅述。Continuing with the above, further, a limiting
接續上述,於第6A圖及第6B圖中,虛線之部分係表示後方之探針。Continuing from the above, in FIG. 6A and FIG. 6B, the dotted line portion represents the rear probe.
再次參閱第2B圖以及第6A圖,如圖所示,於一實施例中,該些個探針20個別之該接觸部22之一下方更設置複數個凸塊結構222,該些個凸塊結構222用於確保該些個探針20個別之該接觸部22與該待測物30導通,本實施例之其他元件關係皆與上述第一實施例相同,故不再贅述。Referring again to FIG. 2B and FIG. 6A , as shown in the figures, in one embodiment, a plurality of
綜上所述,本發明提供一種測試座之結構,其係於基座滑設複數個探針,複數個探針個別之接觸部互相接觸並導通,藉由互相電性導通之接觸部,使探針個別之阻抗降低,減少供於待測物之電流差異,進一步降低探針產生之溫度,解決習知測試座於較高電流時,每一探針流經之電流皆不相同,從而導致部分探針承受較高電流而產生較高溫度,而探針阻抗與電流分布不平均以及產生高溫,直接影響待測物檢測之結果及損毀測試座,導致測試結果不準確之問題。In summary, the present invention provides a test socket structure, in which a plurality of probes are slidably mounted on a base, and individual contact portions of the plurality of probes are in contact with each other and are electrically connected. Through the mutually electrically connected contact portions, the impedance of the individual probes is reduced, the difference in current supplied to the object to be tested is reduced, and the temperature generated by the probes is further reduced. This solves the problem that when a higher current is applied to the conventional test socket, the current flowing through each probe is different, which causes some probes to bear a higher current and generate a higher temperature. The probe impedance and current are unevenly distributed, and the high temperature is generated, which directly affects the result of the object to be tested detection and damages the test socket, resulting in inaccurate test results.
故本發明實為一具有新穎性、進步性及可供產業上利用者,應符合我國專利法專利申請要件無疑,爰依法提出發明專利申請,祈 鈞局早日賜准專利,至感為禱。Therefore, this invention is novel, progressive and can be used in the industry. It should undoubtedly meet the patent application requirements of the Patent Law of our country. Therefore, we have filed an invention patent application in accordance with the law and pray that the Bureau will approve the patent as soon as possible. I am deeply grateful.
惟以上所述者,僅為本發明一實施例而已,並非用來限定本發明實施之範圍,故舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。However, the above is only an embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, all equivalent changes and modifications based on the shape, structure, features and spirit described in the patent application scope of the present invention should be included in the patent application scope of the present invention.
1 測試座之結構
10 基座
11 上方表面
12 下方表面
14 穿孔
16 容置槽
18 板件
20 探針
22 接觸部
222 凸塊結構
24 彈性件
26 墊片
28 限位槽
30 待測物
32 第一導電件
34 第二導電件
H1 高度
H2 移動距離
1
第1圖:其為本發明之一實施例之結構爆炸示意圖; 第2A圖:其為本發明之一實施例之結構側視示意圖; 第2B圖:其為本發明之一實施例之結構側視放大示意圖; 第3A圖至第3B圖:其為本發明之一實施例之結構作動示意圖; 第4A圖:其為本發明之一實施例之接觸部結構示意圖; 第4B圖:其為本發明之另一實施例之接觸部結構示意圖; 第4C圖:其為本發明之再一實施例之接觸部結構示意圖; 第5圖:其為本發明之一實施例之其他結構示意圖; 第6A圖:其為本發明之一實施例之其他結構側視示意圖;以及 第6B圖:其為本發明之一實施例之其他結構側視放大示意圖。 Figure 1: It is a schematic diagram of the structure explosion of one embodiment of the present invention; Figure 2A: It is a schematic diagram of the structure side view of one embodiment of the present invention; Figure 2B: It is an enlarged schematic diagram of the structure side view of one embodiment of the present invention; Figures 3A to 3B: They are schematic diagrams of the structure operation of one embodiment of the present invention; Figure 4A: It is a schematic diagram of the contact part structure of one embodiment of the present invention; Figure 4B: It is a schematic diagram of the contact part structure of another embodiment of the present invention; Figure 4C: It is a schematic diagram of the contact part structure of another embodiment of the present invention; Figure 5: It is a schematic diagram of other structures of one embodiment of the present invention; Figure 6A: It is a schematic diagram of other structures side view of one embodiment of the present invention; and Figure 6B: It is an enlarged schematic diagram of the side view of another structure of one embodiment of the present invention.
1:測試座之結構 1: Structure of the test socket
10:基座 10: Base
11:上方表面 11: Upper surface
12:下方表面 12: Lower surface
14:穿孔 14: Perforation
20:探針 20: Probe
22:接觸部 22: Contact area
Claims (9)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113107315A TWI886819B (en) | 2024-02-29 | 2024-02-29 | Test socket structure |
| CN202410298859.9A CN120559291A (en) | 2024-02-29 | 2024-03-15 | Test socket structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113107315A TWI886819B (en) | 2024-02-29 | 2024-02-29 | Test socket structure |
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| Publication Number | Publication Date |
|---|---|
| TWI886819B true TWI886819B (en) | 2025-06-11 |
| TW202536424A TW202536424A (en) | 2025-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113107315A TWI886819B (en) | 2024-02-29 | 2024-02-29 | Test socket structure |
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| Country | Link |
|---|---|
| CN (1) | CN120559291A (en) |
| TW (1) | TWI886819B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202109050A (en) * | 2019-08-15 | 2021-03-01 | 旺矽科技股份有限公司 | Probe head for high frequency signal test and medium or low frequency signal test at the same time |
-
2024
- 2024-02-29 TW TW113107315A patent/TWI886819B/en active
- 2024-03-15 CN CN202410298859.9A patent/CN120559291A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202109050A (en) * | 2019-08-15 | 2021-03-01 | 旺矽科技股份有限公司 | Probe head for high frequency signal test and medium or low frequency signal test at the same time |
Also Published As
| Publication number | Publication date |
|---|---|
| CN120559291A (en) | 2025-08-29 |
| TW202536424A (en) | 2025-09-16 |
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