TWI886037B - Power supply device for suppressing electromagnetic interference - Google Patents
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本發明係關於一種電源供應器,特別係關於一種可抑制電磁干擾之電源供應器。The present invention relates to a power supply, and more particularly to a power supply capable of suppressing electromagnetic interference.
電源供應器為筆記型電腦領域中不可或缺之元件。然而,若電源供應器之電磁干擾(Electromagnetic Interference,EMI)太過嚴重,則很容易造成相關筆記型電腦之整體操作性能下滑。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。Power supplies are indispensable components in the field of laptop computers. However, if the electromagnetic interference (EMI) of the power supply is too severe, it is easy to cause the overall operating performance of the related laptop to decline. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by previous technologies.
在較佳實施例中,本發明提出一種抑制電磁干擾之電源供應器,包括:一濾波及吸收電路,根據一第一輸入電位和一第二輸入電位來產生一第一濾波電位和一第二濾波電位;一橋式整流器,根據該第一濾波電位和該第二濾波電位來產生一整流電位;一升壓電感器,接收該整流電位;一感測電阻器,耦接至該升壓電感器,其中一電位差係跨越該感測電阻器;一功率切換器,根據一第一驅動電位來選擇性地將該感測電阻器耦接至一接地電位;一第一輸出級電路,耦接至該感測電阻器,並產生一中間電位;一切換電路,根據該中間電位、一第二驅動電位,以及一第三驅動電位來產生一切換電位;一變壓器,包括一主線圈、一第一副線圈,以及一第二副線圈,其中該變壓器內建一漏電感器和一激磁電感器,而該主線圈係經由該漏電感器接收該切換電位;一諧振電容器,耦接至該激磁電感器;一第二輸出級電路,耦接至該第一副線圈和該第二副線圈,並產生一輸出電位;以及一偵測及控制電路,產生該第一驅動電位、該第二驅動電位,以及該第三驅動電位,其中該偵測及控制電路更根據該第一驅動電位之一工作週期、該電位差,以及該輸出電位來產生一控制電位;其中該濾波及吸收電路更根據該控制電位來操作於一純濾波模式或一突波吸收模式兩者擇一。In a preferred embodiment, the present invention provides a power supply for suppressing electromagnetic interference, comprising: a filtering and absorbing circuit, generating a first filtering potential and a second filtering potential according to a first input potential and a second input potential; a bridge rectifier, generating a rectified potential according to the first filtering potential and the second filtering potential; a boost inductor, receiving the rectified potential; a sensing inductor; The invention relates to a power converter comprising a first output stage circuit, a second output stage circuit and a second output stage circuit. The first output stage circuit comprises a first output stage circuit and a second output stage circuit. The first output stage circuit comprises a first output stage circuit and a second output stage circuit. The first output stage circuit comprises a first output stage circuit and a second output stage circuit. The first output stage circuit comprises a first output stage circuit and a second output stage circuit. The first output stage circuit comprises a first output stage circuit and a second output stage circuit. The first output stage circuit comprises a first output stage circuit and a second output stage circuit. The first output stage circuit comprises a first output stage circuit and a second output stage circuit. A switching potential; a transformer, including a main coil, a first secondary coil, and a second secondary coil, wherein the transformer has a leakage inductor and an excitation inductor built therein, and the main coil receives the switching potential via the leakage inductor; a resonant capacitor coupled to the excitation inductor; a second output stage circuit coupled to the first secondary coil and the second secondary coil, and generates an output potential; and a detection and control circuit to generate the first driving potential, the second driving potential, and the third driving potential, wherein the detection and control circuit further generates a control potential according to a duty cycle of the first driving potential, the potential difference, and the output potential; wherein the filtering and absorption circuit further operates in a pure filtering mode or a surge absorption mode according to the control potential.
在一些實施例中,該濾波及吸收電路包括:一第一電容器,具有一第一端和一第二端,其中該第一電容器之該第一端係耦接至一第一輸入節點以接收該第一輸入電位,而該第一電容器之該第二端係耦接至一第二輸入節點以接收該第二輸入電位;一第一電感器,具有一第一端和一第二端,其中該第一電感器之該第一端係耦接至該第一輸入節點,而該第一電感器之該第二端係耦接至一第一控制節點以輸出該第一濾波電位;一第二電感器,具有一第一端和一第二端,其中該第二電感器之該第一端係耦接至該第一輸入節點,而該第二電感器之該第二端係耦接至該第一控制節點;一第三電感器,具有一第一端和一第二端,其中該第三電感器之該第一端係耦接至該第二輸入節點,而該第三電感器之該第二端係耦接至一第二控制節點以輸出該第二濾波電位;一第四電感器,具有一第一端和一第二端,其中該第四電感器之該第一端係耦接至該第二輸入節點,而該第四電感器之該第二端係耦接至該第二控制節點;一第一電晶體,具有一控制端、一第一端,以及一第二端,其中該第一電晶體之該控制端係用於接收該控制電位,該第一電晶體之該第一端係耦接至一第一節點,而該第一電晶體之該第二端係耦接至該第一輸入節點;一第一吸收器,具有一第一端和一第二端,其中該第一吸收器之該第一端係耦接至該第一節點,而該第一吸收器之該第二端係耦接至該第一控制節點;一第二電晶體,具有一控制端、一第一端,以及一第二端,其中該第二電晶體之該控制端係用於接收該控制電位,該第二電晶體之該第一端係耦接至一第二節點,而該第二電晶體之該第二端係耦接至該第二輸入節點;一第二吸收器,具有一第一端和一第二端,其中該第二吸收器之該第一端係耦接至該第二節點,而該第二吸收器之該第二端係耦接至該第二控制節點;一第二電容器,具有一第一端和一第二端,其中該第二電容器之該第一端係耦接至該第一控制節點,而該第二電容器之該第二端係耦接至該第二控制節點;一第三電容器,具有一第一端和一第二端,其中該第三電容器之該第一端係耦接至該第一控制節點,而該第三電容器之該第二端係耦接至一大地電位;一第四電容器,具有一第一端和一第二端,其中該第四電容器之該第一端係耦接至該第二控制節點,而該第四電容器之該第二端係耦接至該大地電位;一第一齊納二極體,具有一陽極和一陰極,其中該第一齊納二極體之該陽極係耦接至一第三節點,而該第一齊納二極體之該陰極係耦接至該第一控制節點;一第三電晶體,具有一控制端、一第一端,以及一第二端,其中該第三電晶體之該控制端係用於接收該控制電位,該第三電晶體之該第一端係耦接至該大地電位,而該第三電晶體之該第二端係耦接至該第三節點;一第二齊納二極體,具有一陽極和一陰極,其中該第二齊納二極體之該陽極係耦接至一第四節點,而該第二齊納二極體之該陰極係耦接至該第二控制節點;以及一第四電晶體,具有一控制端、一第一端,以及一第二端,其中該第四電晶體之該控制端係用於接收該控制電位,該第四電晶體之該第一端係耦接至該大地電位,而該第四電晶體之該第二端係耦接至該第四節點;其中該第二電感器和該第三電感器係彼此互相耦合。In some embodiments, the filtering and absorbing circuit includes: a first capacitor having a first end and a second end, wherein the first end of the first capacitor is coupled to a first input node to receive the first input potential, and the second end of the first capacitor is coupled to a second input node to receive the second input potential; a first inductor having a first end and a second end, wherein the first end of the first inductor is coupled to the first input node, and the first inductor The second end of the inductor is coupled to a first control node to output the first filter potential; a second inductor having a first end and a second end, wherein the first end of the second inductor is coupled to the first input node, and the second end of the second inductor is coupled to the first control node; a third inductor having a first end and a second end, wherein the first end of the third inductor is coupled to the second input node, and the second end of the third inductor is coupled to a second control node. a control node to output the second filter potential; a fourth inductor having a first end and a second end, wherein the first end of the fourth inductor is coupled to the second input node, and the second end of the fourth inductor is coupled to the second control node; a first transistor having a control end, a first end, and a second end, wherein the control end of the first transistor is used to receive the control potential, the first end of the first transistor is coupled to a first node, and the first transistor The second end of the crystal is coupled to the first input node; a first absorber having a first end and a second end, wherein the first end of the first absorber is coupled to the first node, and the second end of the first absorber is coupled to the first control node; a second transistor having a control end, a first end, and a second end, wherein the control end of the second transistor is used to receive the control potential, the first end of the second transistor is coupled to a second node, and the The second end of the second transistor is coupled to the second input node; a second absorber having a first end and a second end, wherein the first end of the second absorber is coupled to the second node, and the second end of the second absorber is coupled to the second control node; a second capacitor having a first end and a second end, wherein the first end of the second capacitor is coupled to the first control node, and the second end of the second capacitor is coupled to the second control node; a third a capacitor having a first terminal and a second terminal, wherein the first terminal of the third capacitor is coupled to the first control node, and the second terminal of the third capacitor is coupled to a ground potential; a fourth capacitor having a first terminal and a second terminal, wherein the first terminal of the fourth capacitor is coupled to the second control node, and the second terminal of the fourth capacitor is coupled to the ground potential; a first Zener diode having an anode and a cathode, wherein the first Zener diode The anode is coupled to a third node, and the cathode of the first Zener diode is coupled to the first control node; a third transistor has a control terminal, a first terminal, and a second terminal, wherein the control terminal of the third transistor is used to receive the control potential, the first terminal of the third transistor is coupled to the ground potential, and the second terminal of the third transistor is coupled to the third node; a second Zener diode has an anode and a cathode, wherein the second Zener diode The anode of the electrode is coupled to a fourth node, and the cathode of the second Zener diode is coupled to the second control node; and a fourth transistor has a control end, a first end, and a second end, wherein the control end of the fourth transistor is used to receive the control potential, the first end of the fourth transistor is coupled to the ground potential, and the second end of the fourth transistor is coupled to the fourth node; wherein the second inductor and the third inductor are coupled to each other.
在一些實施例中,該橋式整流器包括:一第一二極體,具有一陽極和一陰極,其中該第一二極體之該陽極係耦接至該第一控制節點以接收該第一濾波電位,而該第一二極體之該陰極係耦接至一第五節點以輸出該整流電位;一第二二極體,具有一陽極和一陰極,其中該第二二極體之該陽極係耦接至該第二控制節點以接收該第二濾波電位,而該第二二極體之該陰極係耦接至該第五節點;一第三二極體,具有一陽極和一陰極,其中該第三二極體之該陽極係耦接至該接地電位,而該第三二極體之該陰極係耦接至該第一控制節點;以及一第四二極體,具有一陽極和一陰極,其中該第四二極體之該陽極係耦接至該接地電位,而該第四二極體之該陰極係耦接至該第二控制節點;其中該升壓電感器具有一第一端和一第二端,該升壓電感器之該第一端係耦接至該第五節點以接收該整流電位,而該升壓電感器之該第二端係耦接至一第六節點;其中該感測電阻器具有一第一端和一第二端,該感測電阻器之該第一端係耦接至該第六節點,而該感測電阻器之該第二端係耦接至一第七節點。In some embodiments, the bridge rectifier includes: a first diode having an anode and a cathode, wherein the anode of the first diode is coupled to the first control node to receive the first filter potential, and the cathode of the first diode is coupled to a fifth node to output the rectified potential; a second diode having an anode and a cathode, wherein the anode of the second diode is coupled to the second control node to receive the second filter potential, and the cathode of the second diode is coupled to the fifth node; a third diode having an anode and a cathode, wherein the anode of the third diode is coupled to the ground potential, and the cathode of the third diode is coupled to the ground potential. The cathode of the body is coupled to the first control node; and a fourth diode having an anode and a cathode, wherein the anode of the fourth diode is coupled to the ground potential, and the cathode of the fourth diode is coupled to the second control node; wherein the boost inductor has a first end and a second end, the first end of the boost inductor is coupled to the fifth node to receive the rectified potential, and the second end of the boost inductor is coupled to a sixth node; wherein the sensing resistor has a first end and a second end, the first end of the sensing resistor is coupled to the sixth node, and the second end of the sensing resistor is coupled to a seventh node.
在一些實施例中,該功率切換器包括:一第五電晶體,具有一控制端、一第一端,以及一第二端,其中該第一電晶體之該控制端係用於接收該第一驅動電位,該第五電晶體之該第一端係耦接至該接地電位,而該第五電晶體之該第二端係耦接至該第七節點。In some embodiments, the power switch includes: a fifth transistor having a control end, a first end, and a second end, wherein the control end of the first transistor is used to receive the first driving potential, the first end of the fifth transistor is coupled to the ground potential, and the second end of the fifth transistor is coupled to the seventh node.
在一些實施例中,該第一輸出級電路包括:一第五二極體,具有一陽極和一陰極,其中該第五二極體之該陽極係耦接至該第七節點,而該第五二極體之該陰極係耦接至一第八節點以輸出該中間電位;以及一第五電容器,具有一第一端和一第二端,其中該第五電容器之該第一端係耦接至該第八節點,而該第五電容器之該第二端係耦接至該接地電位。In some embodiments, the first output stage circuit includes: a fifth diode having an anode and a cathode, wherein the anode of the fifth diode is coupled to the seventh node, and the cathode of the fifth diode is coupled to an eighth node to output the intermediate potential; and a fifth capacitor having a first end and a second end, wherein the first end of the fifth capacitor is coupled to the eighth node, and the second end of the fifth capacitor is coupled to the ground potential.
在一些實施例中,該切換電路包括:一第六電晶體,具有一控制端、一第一端,以及一第二端,其中該第六電晶體之該控制端係用於接收該第二驅動電位,該第六電晶體之該第一端係耦接至一第九節點以輸出該切換電位,而該第六電晶體之該第二端係耦接至該第八節點以接收該中間電位;以及一第七電晶體,具有一控制端、一第一端,以及一第二端,其中該第七電晶體之該控制端係用於接收該第三驅動電位,該第七電晶體之該第一端係耦接至該接地電位,而該第七電晶體之該第二端係耦接至該第九節點。In some embodiments, the switching circuit includes: a sixth transistor having a control end, a first end, and a second end, wherein the control end of the sixth transistor is used to receive the second driving potential, the first end of the sixth transistor is coupled to a ninth node to output the switching potential, and the second end of the sixth transistor is coupled to the eighth node to receive the intermediate potential; and a seventh transistor having a control end, a first end, and a second end, wherein the control end of the seventh transistor is used to receive the third driving potential, the first end of the seventh transistor is coupled to the ground potential, and the second end of the seventh transistor is coupled to the ninth node.
在一些實施例中,該漏電感器具有一第一端和一第二端,該漏電感器之該第一端係耦接至該第九節點以接收該切換電位,該漏電感器之該第二端係耦接至一第十節點,該主線圈具有一第一端和一第二端,該主線圈之該第一端係耦接至該第十節點,該主線圈之該第二端係耦接至一第十一節點,該激磁電感器具有一第一端和一第二端,該激磁電感器之該第一端係耦接至該第十節點,該激磁電感器之該第二端係耦接至該第十一節點,該諧振電容器具有一第一端和一第二端,該諧振電容器之該第一端係耦接至該第十一節點,該諧振電容器之該第二端係耦接至該接地電位,該第一副線圈具有一第一端和一第二端,該第一副線圈之該第一端係耦接至一第十二節點,該第一副線圈之該第二端係耦接至一共同節點,該第二副線圈具有一第一端和一第二端,該第二副線圈之該第一端係耦接至該共同節點,而該第二副線圈之該第二端係耦接至一第十三節點。In some embodiments, the leakage inductor has a first end and a second end, the first end of the leakage inductor is coupled to the ninth node to receive the switching potential, the second end of the leakage inductor is coupled to a tenth node, the main coil has a first end and a second end, the first end of the main coil is coupled to the tenth node, the second end of the main coil is coupled to an eleventh node, the excitation inductor has a first end and a second end, the first end of the excitation inductor is coupled to the tenth node, the second end of the excitation inductor is coupled to the eleventh node. The resonant capacitor has a first end and a second end, the first end of the resonant capacitor is coupled to the eleventh node, the second end of the resonant capacitor is coupled to the ground potential, the first secondary coil has a first end and a second end, the first end of the first secondary coil is coupled to a twelfth node, the second end of the first secondary coil is coupled to a common node, the second secondary coil has a first end and a second end, the first end of the second secondary coil is coupled to the common node, and the second end of the second secondary coil is coupled to a thirteenth node.
在一些實施例中,該第二輸出級電路包括:一第六二極體,具有一陽極和一陰極,其中該第六二極體之該陽極係耦接至該第十二節點,而該第六二極體之該陰極係耦接至一輸出節點以輸出該輸出電位;一第七二極體,具有一陽極和一陰極,其中該第七二極體之該陽極係耦接至該第十三節點,而該第七二極體之該陰極係耦接至該輸出節點;以及一第六電容器,具有一第一端和一第二端,其中該第六電容器之該第一端係耦接至該輸出節點,而該第六電容器之該第二端係耦接至該共同節點。In some embodiments, the second output stage circuit includes: a sixth diode having an anode and a cathode, wherein the anode of the sixth diode is coupled to the twelfth node, and the cathode of the sixth diode is coupled to an output node to output the output potential; a seventh diode having an anode and a cathode, wherein the anode of the seventh diode is coupled to the thirteenth node, and the cathode of the seventh diode is coupled to the output node; and a sixth capacitor having a first end and a second end, wherein the first end of the sixth capacitor is coupled to the output node, and the second end of the sixth capacitor is coupled to the common node.
在一些實施例中,該偵測及控制電路包括:一平均電路,計算跨越該感測電阻器之該電位差之一平均值,以產生一平均電位;以及一比較器,具有一正輸入端、一負輸入端,以及一輸出端,其中該比較器之該正輸入端係用於接收一參考電位,該比較器之該負輸入端係用於接收該平均電位,而該比較器之該輸出端係用於輸出一比較電位。In some embodiments, the detection and control circuit includes: an averaging circuit that calculates an average value of the potential difference across the sensing resistor to generate an average potential; and a comparator having a positive input terminal, a negative input terminal, and an output terminal, wherein the positive input terminal of the comparator is used to receive a reference potential, the negative input terminal of the comparator is used to receive the average potential, and the output terminal of the comparator is used to output a comparison potential.
在一些實施例中,該偵測及控制電路更包括:一微控制器,產生該參考電位、該第一驅動電位、該第二驅動電位,以及該第三驅動電位,其中該微控制器更根據該比較電位和該第一驅動電位之該工作週期來產生一第一指示電位和一第二指示電位;以及一及閘,具有一第一輸入端、一第二輸入端、一第三輸入端,以及一輸出端,其中該及閘之該第一輸入端係用於接收該輸出電位,該及閘之該第二輸入端係用於接收該第一指示電位,該及閘之該第三輸入端係用於接收該第二指示電位,而該及閘之該輸出端係用於輸出一邏輯電位;其中該微控制器更根據該邏輯電位來產生該控制電位;其中若該控制電位具有低邏輯位準,則該濾波及吸收電路將操作於該純濾波模式;其中若該控制電位具有高邏輯位準,則該濾波及吸收電路將操作於該突波吸收模式。In some embodiments, the detection and control circuit further includes: a microcontroller, generating the reference potential, the first drive potential, the second drive potential, and the third drive potential, wherein the microcontroller further generates a first indication potential and a second indication potential according to the comparison potential and the duty cycle of the first drive potential; and an AND gate, having a first input terminal, a second input terminal, a third input terminal, and an output terminal, wherein the first input terminal of the AND gate is used to receive the output potential. The second input terminal of the AND gate is used to receive the first indication potential, the third input terminal of the AND gate is used to receive the second indication potential, and the output terminal of the AND gate is used to output a logic potential; wherein the microcontroller further generates the control potential according to the logic potential; wherein if the control potential has a low logic level, the filter and absorption circuit will operate in the pure filtering mode; wherein if the control potential has a high logic level, the filter and absorption circuit will operate in the surge absorption mode.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more clearly understood, specific embodiments of the present invention are specifically listed below and described in detail with reference to the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used in the specification and patent application to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. This specification and patent application do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criterion for distinction. The words "include" and "including" mentioned throughout the specification and patent application are open terms and should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. In addition, the word "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described herein as being coupled to a second device, it means that the first device may be directly electrically connected to the second device, or may be indirectly electrically connected to the second device via other devices or connection means.
第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一濾波及吸收電路110、一橋式整流器120、一升壓電感器LU、一感測電阻器RS、一功率切換器130、一第一輸出級電路140、一切換電路150、一變壓器160、一諧振電容器CR、一第二輸出級電路170,以及一偵測及控制電路180。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。FIG. 1 is a schematic diagram showing a
濾波及吸收電路110可根據一第一輸入電位VIN1和一第二輸入電位VIN2來產生一第一濾波電位VF1和一第二濾波電位VF2,其中第一輸入電位VIN1和第二輸入電位VIN2之間可形成具有任意頻率和任意振幅之一交流電壓。例如,交流電壓之頻率可約為50Hz或60Hz,而交流電壓之方均根值可約介於90V至264V之間,但亦不僅限於此。橋式整流器120可根據第一濾波電位VF1和第二濾波電位VF2來產生一整流電位VR。升壓電感器LU可接收整流電位VR。感測電阻器RS係耦接至升壓電感器LU,其中有一電位差ΔV可跨越感測電阻器RS。功率切換器130可根據一第一驅動電位VG1來選擇性地將感測電阻器RS耦接至一接地電位VSS(例如:0V)。例如,若第一驅動電位VG1具有高邏輯位準(亦即,邏輯「1」),則功率切換器130可將感測電阻器RS耦接至接地電位VSS(亦即,功率切換器130可近似於一短路路徑);反之,若第一驅動電位VG1具有低邏輯位準(亦即,邏輯「0」),則功率切換器130不會將感測電阻器RS耦接至接地電位VSS(亦即,功率切換器130可近似於一斷路路徑)。第一輸出級電路140係耦接至感測電阻器RS,並可產生一中間電位VE。切換電路150可根據中間電位VE、一第二驅動電位VG2,以及一第三驅動電位VG3來產生一切換電位VW。The filter and
變壓器160包括一主線圈161、一第一副線圈162,以及一第二副線圈163。變壓器160更可內建一漏電感器LR和一激磁電感器LM,其中漏電感器LR、激磁電感器LM,以及主線圈161皆可位於變壓器160之同一側,而第一副線圈162和第二副線圈163則皆可位於變壓器160之相對另一側。主線圈161可經由漏電感器LR接收切換電位VW,而第一副線圈162和第二副線圈163則可回應於切換電位VW來進行操作。諧振電容器CR係耦接至激磁電感器LM。例如,漏電感器LR、激磁電感器LM,以及諧振電容器CR三者可共同形成電源供應器100之一諧振槽(Resonant Tank)。第二輸出級電路170係耦接至第一副線圈162和第二副線圈163,並可產生一輸出電位VOUT。例如,輸出電位VOUT可為一直流電位,其電位位準可介於18V至22V之間,但亦不僅限於此。The
偵測及控制電路180可產生第一驅動電位VG1、第二驅動電位VG2,以及第三驅動電位VG3。另外,偵測及控制電路180還可根據第一驅動電位VG1之一工作週期(Duty Cycle)DT、電位差ΔV,以及輸出電位VOUT來產生一控制電位VC。必須注意的是,濾波及吸收電路110係根據控制電位VC來操作於一純濾波模式MD1或一突波吸收模式MD2兩者擇一。在純濾波模式MD1下,濾波及吸收電路110僅具有濾波之功能。在突波吸收模式MD2下,除了濾波之功能以外,濾波及吸收電路110還可快速消除掉來自外部之突波能量,例如:雷擊能量,但亦不僅限於此。根據實際量測結果,濾波及吸收電路110之加入有助於大幅降低電源供應器100相關之電磁干擾(Electromagnetic Interference,EMI)。The detection and control circuit 180 can generate a first driving potential VG1, a second driving potential VG2, and a third driving potential VG3. In addition, the detection and control circuit 180 can also generate a control potential VC according to a duty cycle DT of the first driving potential VG1, the potential difference ΔV, and the output potential VOUT. It should be noted that the filtering and
以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之電源供應器200之電路圖。在第2圖之實施例中,電源供應器200具有一第一輸入節點NIN1、一第二輸入節點NIN2,以及一輸出節點NOUT,並包括:一濾波及吸收電路210、一橋式整流器220、一升壓電感器LU、一感測電阻器RS、一功率切換器230、一第一輸出級電路240、一切換電路250、一變壓器260、一諧振電容器CR、一第二輸出級電路270,以及一偵測及控制電路280。電源供應器200之第一輸入節點NIN1和第二輸入節點NIN2可分別由一外部輸入電源處(未顯示)接收一第一輸入電位VIN1和一第二輸入電位VIN2,而電源供應器200之輸出節點NOUT則可用於輸出一輸出電位VOUT至一系統端,例如:一筆記型電腦(未顯示)。FIG. 2 is a circuit diagram of a
第3圖係顯示根據本發明一實施例所述之濾波及吸收電路210之電路圖。在第3圖之實施例中,濾波及吸收電路210包括:一第一吸收器(Absorber)212、一第二吸收器214、一第一電晶體M1、一第二電晶體M2、一第三電晶體M3、一第四電晶體M4、一第一齊納二極體(Zener Diode)DZ1、一第二齊納二極體DZ2、一第一電感器L1、一第二電感器L2、一第三電感器L3、一第四電感器L4、一第一電容器C1、一第二電容器C2、一第三電容器C3,以及一第四電容器C4。例如,第一電晶體M1、第二電晶體M2、第三電晶體M3,以及第四電晶體M4可各自為一N型金氧半場效電晶體(N-type Metal-Oxide-Semiconductor Field-Effect Transistor,NMOSFET)。FIG. 3 is a circuit diagram of a filter and
第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至第一輸入節點NIN1,而第一電容器C1之第二端係耦接至第二輸入節點NIN2。第一電感器L1具有一第一端和一第二端,其中第一電感器L1之第一端係耦接至第一輸入節點NIN1,而第一電感器L1之第二端係耦接至一第一控制節點NC1以輸出一第一濾波電位VF1。第二電感器L2具有一第一端和一第二端,其中第二電感器L2之第一端係耦接至第一輸入節點NIN1,而第二電感器L2之第二端係耦接至第一控制節點NC1。第三電感器L3具有一第一端和一第二端,其中第三電感器L3之第一端係耦接至第二輸入節點NIN2,而第三電感器L3之第二端係耦接至一第二控制節點NC2以輸出一第二濾波電位VF2。第四電感器L4具有一第一端和一第二端,其中第四電感器L4之第一端係耦接至第二輸入節點NIN2,而第四電感器L4之第二端係耦接至第二控制節點NC2。在一些實施例中,第二電感器L2和第三電感器L3係彼此互相耦合。例如,第二電感器L2和第三電感器L3可為相鄰近之二個不同線圈,但亦不僅限於此。第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係耦接至第一控制節點NC1,而第二電容器C2之第二端係耦接至第二控制節點NC2。第三電容器C3具有一第一端和一第二端,其中第三電容器C3之第一端係耦接至第一控制節點NC1,而第三電容器C3之第二端係耦接至一大地電位VGS。第四電容器C4具有一第一端和一第二端,其中第四電容器C4之第一端係耦接至第二控制節點NC2,而第四電容器C4之第二端係耦接至大地電位VGS。必須理解的是,大地電位VGS可指一系統接地點,例如:耦接至地球之一接地路徑。在另一些實施例中,大地電位VGS亦可由另一接地電位所取代,其可作為一洩流路徑。The first capacitor C1 has a first end and a second end, wherein the first end of the first capacitor C1 is coupled to the first input node NIN1, and the second end of the first capacitor C1 is coupled to the second input node NIN2. The first inductor L1 has a first end and a second end, wherein the first end of the first inductor L1 is coupled to the first input node NIN1, and the second end of the first inductor L1 is coupled to a first control node NC1 to output a first filtering potential VF1. The second inductor L2 has a first end and a second end, wherein the first end of the second inductor L2 is coupled to the first input node NIN1, and the second end of the second inductor L2 is coupled to the first control node NC1. The third inductor L3 has a first end and a second end, wherein the first end of the third inductor L3 is coupled to the second input node NIN2, and the second end of the third inductor L3 is coupled to a second control node NC2 to output a second filter potential VF2. The fourth inductor L4 has a first end and a second end, wherein the first end of the fourth inductor L4 is coupled to the second input node NIN2, and the second end of the fourth inductor L4 is coupled to the second control node NC2. In some embodiments, the second inductor L2 and the third inductor L3 are coupled to each other. For example, the second inductor L2 and the third inductor L3 can be two different coils adjacent to each other, but are not limited thereto. The second capacitor C2 has a first terminal and a second terminal, wherein the first terminal of the second capacitor C2 is coupled to the first control node NC1, and the second terminal of the second capacitor C2 is coupled to the second control node NC2. The third capacitor C3 has a first terminal and a second terminal, wherein the first terminal of the third capacitor C3 is coupled to the first control node NC1, and the second terminal of the third capacitor C3 is coupled to a ground potential VGS. The fourth capacitor C4 has a first terminal and a second terminal, wherein the first terminal of the fourth capacitor C4 is coupled to the second control node NC2, and the second terminal of the fourth capacitor C4 is coupled to the ground potential VGS. It must be understood that the ground potential VGS may refer to a system ground point, for example: a ground path coupled to the earth. In other embodiments, the ground potential VGS may also be replaced by another ground potential, which may serve as a leakage path.
第一電晶體M1具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第一電晶體M1之控制端係用於接收一控制電位VC,第一電晶體M1之第一端係耦接至一第一節點N1,而第一電晶體M1之第二端係耦接至第一輸入節點NIN1。第一吸收器212具有一第一端和一第二端,其中第一吸收器212之第一端係耦接至第一節點N1,而第一吸收器212之第二端係耦接至第一控制節點NC1。第二電晶體M2具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第二電晶體M2之控制端係用於接收控制電位VC,第二電晶體M2之第一端係耦接至一第二節點N2,而第二電晶體M2之第二端係耦接至第二輸入節點NIN2。第二吸收器214具有一第一端和一第二端,其中第二吸收器214之第一端係耦接至第二節點N2,而第二吸收器214之第二端係耦接至第二控制節點NC2。第一齊納二極體DZ1具有一陽極和一陰極,其中第一齊納二極體DZ1之陽極係耦接至一第三節點N3,而第一齊納二極體DZ1之陰極係耦接至第一控制節點NC1。第三電晶體M3具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第三電晶體M3之控制端係用於接收控制電位VC,第三電晶體M3之第一端係耦接至大地電位VGS,而第三電晶體M3之第二端係耦接至第三節點N3。第二齊納二極體DZ2具有一陽極和一陰極,其中第二齊納二極體DZ2之陽極係耦接至一第四節點N4,而第二齊納二極體DZ2之陰極係耦接至第二控制節點NC2。第四電晶體M4具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第四電晶體M4之控制端係用於接收控制電位VC,第四電晶體M4之第一端係耦接至大地電位VGS,而第四電晶體M4之第二端係耦接至第四節點N4。The first transistor M1 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain), wherein the control terminal of the first transistor M1 is used to receive a control potential VC, the first terminal of the first transistor M1 is coupled to a first node N1, and the second terminal of the first transistor M1 is coupled to the first input node NIN1. The
在一些實施例中,濾波及吸收電路210可根據控制電位VC來操作於一純濾波模式MD1或一突波吸收模式MD2兩者擇一。例如,若控制電位VC具有低邏輯位準,則濾波及吸收電路210將可操作於純濾波模式MD1,其中第一吸收器212和第二吸收器214皆可被禁能(Disabled)。反之,若控制電位VC具有高邏輯位準,則濾波及吸收電路210將可操作於突波吸收模式MD2,其中第一吸收器212和第二吸收器214皆可被致能(Enabled),從而快速消除掉來自外部之突波能量。根據實際量測結果,即使有一些突波能量意外施加於電源供應器200,其幾乎也可由濾波及吸收電路210所完全消耗,使得電源供應器200之正常運作不會受到太大之負面影響。In some embodiments, the filter and
橋式整流器220包括一第一二極體D1、一第二二極體D2、一第三二極體D3,以及一第四二極體D4。第一二極體D1具有一陽極和一陰極,其中第一二極體D1之陽極係耦接至第一控制節點NC1以接收第一濾波電位VF1,而第一二極體D1之陰極係耦接至一第五節點N5以輸出一整流電位VR。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第二控制節點NC2以接收第二濾波電位VF2,而第二二極體D2之陰極係耦接至第五節點N5。第三二極體D3具有一陽極和一陰極,其中第三二極體D3之陽極係耦接至一接地電位VSS(例如:0V),而第三二極體D3之陰極係耦接至第一控制節點NC1。第四二極體D4具有一陽極和一陰極,其中第四二極體D4之陽極係耦接至接地電位VSS,而第四二極體D4之陰極係耦接至第二控制節點NC2。The
升壓電感器LU具有一第一端和一第二端,其中升壓電感器LU之第一端係耦接至第五節點N5以接收整流電位VR,而升壓電感器LU之第二端係耦接至一第六節點N6。The boost inductor LU has a first terminal and a second terminal, wherein the first terminal of the boost inductor LU is coupled to the fifth node N5 to receive the rectified potential VR, and the second terminal of the boost inductor LU is coupled to a sixth node N6.
感測電阻器RS具有一第一端和一第二端,其中感測電阻器RS之第一端係耦接至第六節點N6,而感測電阻器RS之第二端係耦接至一第七節點N7。在一些實施例中,感測電阻器RS具有相對較小之一電阻值(例如:小於或等於3Ω),其中有一電位差ΔV係跨越感測電阻器RS。The sensing resistor RS has a first terminal and a second terminal, wherein the first terminal of the sensing resistor RS is coupled to the sixth node N6, and the second terminal of the sensing resistor RS is coupled to a seventh node N7. In some embodiments, the sensing resistor RS has a relatively small resistance value (e.g., less than or equal to 3Ω), wherein a potential difference ΔV is across the sensing resistor RS.
功率切換器230包括一第五電晶體M5。例如,第五電晶體M5可為一N型金氧半場效電晶體。第五電晶體M5具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第五電晶體M5之控制端係用於接收一第一驅動電位VG1,第五電晶體M5之第一端係耦接至接地電位VSS,而第五電晶體M5之第二端係耦接至第七節點N7。The
第一輸出級電路240包括一第五二極體D5和一第五電容器C5。第五二極體D5具有一陽極和一陰極,其中第五二極體D5之陽極係耦接至第七節點N7,而第五二極體D5之陰極係耦接至一第八節點N8以輸出一中間電位VE。第五電容器C5具有一第一端和一第二端,其中第五電容器C5之第一端係耦接至第八節點N8,而第五電容器C5之第二端係耦接至接地電位VSS。The first
切換電路250包括一第六電晶體M6和一第七電晶體M7。例如,第六電晶體M6和第七電晶體M7可各自為一N型金氧半場效電晶體。第六電晶體M6具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第六電晶體M6之控制端係用於接收一第二驅動電位VG2,第六電晶體M6之第一端係耦接至一第九節點N9以輸出一切換電位VW,而第六電晶體M6之第二端係耦接至第八節點N8以接收中間電位VE。第七電晶體M7具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第七電晶體M7之控制端係用於接收一第三驅動電位VG3,第七電晶體M7之第一端係耦接至接地電位VSS,而第七電晶體M7之第二端係耦接至第九節點N9。The
變壓器260包括一主線圈261、一第一副線圈262,以及一第二副線圈263,其中變壓器260更內建一漏電感器LR和一激磁電感器LM。漏電感器LR和激磁電感器LM皆可為變壓器260製造時所附帶產生之固有元件,其並非外部獨立元件。漏電感器LR、主線圈261,以及激磁電感器LM皆可位於變壓器260之同一側(例如:一次側),而第一副線圈262和第二副線圈263則皆可位於變壓器260之相對另一側(例如:二次側,其可與一次側互相隔離開來)。漏電感器LR具有一第一端和一第二端,其中漏電感器LR之第一端係耦接至第九節點N9以接收切換電位VW,而漏電感器LR之第二端係耦接至一第十節點N10。主線圈261具有一第一端和一第二端,其中主線圈261之第一端係耦接至第十節點N10,而主線圈261之第二端係耦接至一第十一節點N11。激磁電感器LM具有一第一端和一第二端,其中激磁電感器LM之第一端係耦接至第十節點N10,而激磁電感器LM之第二端係耦接至第十一節點N11。諧振電容器CR具有一第一端和一第二端,其中諧振電容器CR之第一端係耦接至第十一節點N11,而諧振電容器CR之第二端係耦接至接地電位VSS。例如,漏電感器LR、激磁電感器LM,以及諧振電容器CR三者可共同形成電源供應器200之一諧振槽。第一副線圈262具有一第一端和一第二端,其中第一副線圈262之第一端係耦接至一第十二節點N12,而第一副線圈262之第二端係耦接至一共同節點NCM。例如,共同節點NCM可提供一共同電位,其可被視為又一接地電位,並可與前述之大地電位VGS和接地電位VSS相同或相異。第二副線圈263具有一第一端和一第二端,其中第二副線圈263之第一端係耦接至共同節點NCM,而第二副線圈263之第二端係耦接至一第十三節點N13。The
第二輸出級電路270包括一第六二極體D6、一第七二極體D7,以及一第六電容器C6。第六二極體D6具有一陽極和一陰極,其中第六二極體D6之陽極係耦接至第十二節點N12,而第六二極體D6之陰極係耦接至輸出節點NOUT。第七二極體D7具有一陽極和一陰極,其中第七二極體D7之陽極係耦接至第十三節點N13,而第七二極體D7之陰極係耦接至輸出節點NOUT。第六電容器C6具有一第一端和一第二端,其中第六電容器C6之第一端係耦接至輸出節點NOUT,而第六電容器C6之第二端係耦接至共同節點NCM。The second
偵測及控制電路280包括:一平均電路(Averaging Circuit)282、一比較器(Comparator)284、一微控制器(Microcontroller Unit,MCU)286,以及一及閘(AND Gate)288,其功能及操作方式可如下列實施例所述。The detection and
平均電路282係分別耦接至感測電阻器RS之第一端和第二端,以計算前述之電位差ΔV之一平均值並產生一平均電位VA。例如,平均電位VA可代表前述之電位差ΔV於一段既定時間內之一平均位準,但亦不僅限於此。The averaging
比較器284具有一正輸入端、一負輸入端,以及一輸出端,其中比較器284之正輸入端係用於接收一參考電位VK,比較器284之負輸入端係用於接收平均電位VA,而比較器284之輸出端係用於輸出一比較電位VB。例如,若平均電位VA低於或等於參考電位VK,則比較器284將可輸出具有高邏輯位準之比較電位VB;反之,若平均電位VA高於參考電位VK,則比較器284將可輸出具有低邏輯位準之比較電位VB。The
微控制器286可產生參考電位VK、第一驅動電位VG1、第二驅動電位VG2,以及第三驅動電位VG3。參考電位VK可具有一固定位準(例如:1V或2V)。第一驅動電位VG1、第二驅動電位VG2,以及第三驅動電位VG3皆可為脈波寬度調變(Pulse Width Modulation,PWM)電位。另外,第二驅動電位VG2和第三驅動電位VG3還可具有互補(Complementary)之邏輯位準。The
在一些實施例中,微控制器286還可根據比較電位VB來產生一第一指示電位VT1。例如,若比較電位VB具有高邏輯位準,則微控制器286亦可輸出具有高邏輯位準之第一指示電位VT1。反之,若比較電位VB具有低邏輯位準,則微控制器286亦可輸出具有低邏輯位準之第一指示電位VT1。In some embodiments, the
在一些實施例中,微控制器286還可根據第一驅動電位VG1之一工作週期DT來產生一第二指示電位VT2。詳細而言,微控制器286可將第一驅動電位VG1之工作週期DT與一臨界值TH作比較。例如,若第一驅動電位VG1之工作週期DT小於或等於臨界值TH,則微控制器286將可輸出具有高邏輯位準之第二指示電位VT2。反之,若第一驅動電位VG1之工作週期DT大於臨界值TH,則微控制器286將可輸出具有低邏輯位準之第二指示電位VT2。前述之臨界值TH可介於30%至40%之間,例如:36%,但亦不僅限於此。In some embodiments, the
及閘288具有一第一輸入端、一第二輸入端、一第三輸入端,以及一輸出端,其中及閘288之第一輸入端係用於接收輸出電位VOUT,及閘288之第二輸入端係用於接收第一指示電位VT1,及閘288之第三輸入端係用於接收第二指示電位VT2,而及閘288之輸出端係用於輸出一邏輯電位VL。例如,若輸出電位VOUT、第一指示電位VT1,以及第二指示電位VT2三者皆為高邏輯位準,則及閘288將可輸出具有高邏輯位準之邏輯電位VL;反之,若輸出電位VOUT、第一指示電位VT1,以及第二指示電位VT2其中之任一者為低邏輯位準,則及閘288將可輸出具有低邏輯位準之邏輯電位VL。The AND
在一些實施例中,微控制器286可持續監控邏輯電位VL之狀態,並可再根據邏輯電位VL來產生控制電位VC。例如,若邏輯電位VL具有低邏輯位準,則微控制器286亦可輸出具有低邏輯位準之控制電位VC至濾波及吸收電路210;反之,若邏輯電位VL具有高邏輯位準,則微控制器286亦可輸出具有高邏輯位準之控制電位VC至濾波及吸收電路210。In some embodiments, the
第4圖係顯示根據本發明一實施例所述之電源供應器200之電位波形圖,其中橫軸代表時間(s),而縱軸代表電位位準(V)。如第4圖所示,在一第一時間點T1處,第一指示電位VT1由低邏輯位準切換至高邏輯位準,其中具有高邏輯位準之第一指示電位VT1通常代表流過升壓電感器LU之一電感電流相對較低。接著,在一第二時間點T2處,第二指示電位VT2亦由低邏輯位準切換至高邏輯位準,其中具有高邏輯位準之第二指示電位VT2通常代表第一驅動電位VG1之工作週期DT相對較小。另外,當電源供應器200正常運作時,其輸出電位VOUT則通常皆會維持於高邏輯位準。必須理解的是,在第二時間點T2之後,控制電位VC將由低邏輯位準切換至高邏輯位準,使得濾波及吸收電路210先離開純濾波模式MD1再進入突波吸收模式MD2。綜上所述,在電源供應器200自身之操作功率相對較小之前提下,其對於突波能量之容忍耐受度一般也會較低,是以突波吸收模式MD2之應用將有助於明顯消除電源供應器200相關之電磁干擾。FIG. 4 is a potential waveform diagram of a
本發明提出一種新穎之電源供應器,其具有可操作於不同模式之濾波及吸收電路。根據實際量測結果,使用前述設計之電源供應器相關之電磁干擾將能被有效地抑制,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel power supply having filtering and absorption circuits that can operate in different modes. According to actual measurement results, the electromagnetic interference associated with the power supply using the above-mentioned design can be effectively suppressed, so it is very suitable for application in various types of devices.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-4圖所圖示之狀態。本發明可以僅包括第1-4圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the potential, current, resistance, inductance, capacitance, and other component parameters described above are not limiting conditions of the present invention. Designers can adjust these settings according to different needs. The power supply of the present invention is not limited to the states shown in Figures 1-4. The present invention may only include any one or more features of any one or more embodiments of Figures 1-4. In other words, not all of the features shown in the diagrams need to be implemented in the power supply of the present invention at the same time. Although the embodiments of the present invention use metal oxide semi-conductor field effect transistors as an example, the present invention is not limited to this. People skilled in the art can use other types of transistors, such as junction field effect transistors, or fin field effect transistors, etc., without affecting the effects of the present invention.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。Ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., have no sequential relationship with each other, and are only used to mark and distinguish two different components with the same name.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed as above with the preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the attached patent application.
100,200:電源供應器 110,210:濾波及吸收電路 120,220:橋式整流器 130,230:功率切換器 140,240:第一輸出級電路 150,250:切換電路 160,260:變壓器 161,261:主線圈 162,262:第一副線圈 163,263:第二副線圈 170,270:第二輸出級電路 180,280:偵測及控制電路 212:第一吸收器 214:第二吸收器 282:平均電路 284:比較器 286:微控制器 288:及閘 C1:第一電容器 C2:第二電容器 C3:第三電容器 C4:第四電容器 C5:第五電容器 C6:第六電容器 CR:諧振電容器 D1:第一二極體 D2:第二二極體 D3:第三二極體 D4:第四二極體 D5:第五二極體 D6:第六二極體 D7:第七二極體 DT:工作週期 DZ1:第一齊納二極體 DZ2:第二齊納二極體 L1:第一電感器 L2:第二電感器 L3:第三電感器 L4:第四電感器 LM:激磁電感器 LR:漏電感器 LU:升壓電感器 M1:第一電晶體 M2:第二電晶體 M3:第三電晶體 M4:第四電晶體 M5:第五電晶體 M6:第六電晶體 M7:第七電晶體 MD1:純濾波模式 MD2:突波吸收模式 N1:第一節點 N2:第二節點 N3:第三節點 N4:第四節點 N5:第五節點 N6:第六節點 N7:第七節點 N8:第八節點 N9:第九節點 N10:第十節點 N11:第十一節點 N12:第十二節點 N13:第十三節點 NC1:第一控制節點 NC2:第二控制節點 NCM:共同節點 NIN1:第一輸入節點 NIN2:第二輸入節點 NOUT:輸出節點 RS:感測電阻器 T1:第一時間點 T2:第二時間點 TH:臨界值 VA:平均電位 VB:比較電位 VC:控制電位 VE:中間電位 VF1:第一濾波電位 VF2:第二濾波電位 VK:參考電位 VG1:第一驅動電位 VG2:第二驅動電位 VG3:第三驅動電位 VGS:大地電位 VIN1:第一輸入電位 VIN2:第二輸入電位 VL:邏輯位準 VOUT:輸出電位 VR:整流電位 VSS:接地電位 VT1:第一指示電位 VT2:第二指示電位 VW:切換電位 ΔV:電位差100,200: Power supply 110,210: Filtering and absorption circuit 120,220: Bridge rectifier 130,230: Power switch 140,240: First output stage circuit 150,250: Switching circuit 160,260: Transformer 161,261: Main coil 162,262: First secondary coil 163,263: Second secondary coil 170,270: Second output stage circuit 180,280: Detection and control circuit 212: First absorber 214: Second absorber 282: Averaging circuit 284: Comparator 286: Microcontroller 288: AND gate C1: First capacitor C2: Second capacitor C3: Third capacitor C4: Fourth capacitor C5: Fifth capacitor C6: Sixth capacitor CR: Resonance capacitor D1: First diode D2: Second diode D3: Third diode D4: Fourth diode D5: Fifth diode D6: Sixth diode D7: Seventh diode DT: Duty cycle DZ1: First Zener diode DZ2: Second Zener diode L1: First inductor L2: Second inductor L3: Third inductor L4: Fourth inductor LM: Magnetizing inductor LR: Leakage inductor LU: Boost inductor M1: First transistor M2: Second transistor M3: Third transistor M4: fourth transistor M5: fifth transistor M6: sixth transistor M7: seventh transistor MD1: pure filter mode MD2: surge absorption mode N1: first node N2: second node N3: third node N4: fourth node N5: fifth node N6: sixth node N7: seventh node N8: eighth node N9: ninth node N10: tenth node N11: eleventh node N12: twelfth node N13: thirteenth node NC1: first control node NC2: second control node NCM: common node NIN1: first input node NIN2: second input node NOUT: output node RS: sense resistor T1: first time point T2: second time point TH: critical value VA: average potential VB: Comparison potential VC: Control potential VE: Intermediate potential VF1: First filter potential VF2: Second filter potential VK: Reference potential VG1: First drive potential VG2: Second drive potential VG3: Third drive potential VGS: Earth potential VIN1: First input potential VIN2: Second input potential VL: Logic level VOUT: Output potential VR: Rectification potential VSS: Ground potential VT1: First indication potential VT2: Second indication potential VW: Switching potential ΔV: Potential difference
第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之電路圖。 第3圖係顯示根據本發明一實施例所述之濾波及吸收電路之電路圖。 第4圖係顯示根據本發明一實施例所述之電源供應器之電位波形圖。 FIG. 1 is a schematic diagram showing a power supply according to an embodiment of the present invention. FIG. 2 is a circuit diagram showing a power supply according to an embodiment of the present invention. FIG. 3 is a circuit diagram showing a filter and absorption circuit according to an embodiment of the present invention. FIG. 4 is a potential waveform diagram showing a power supply according to an embodiment of the present invention.
100:電源供應器 100: Power supply
110:濾波及吸收電路 110: Filtering and absorption circuit
120:橋式整流器 120: Bridge rectifier
130:功率切換器 130: Power switch
140:第一輸出級電路 140: First output stage circuit
150:切換電路 150: Switching circuit
160:變壓器 160: Transformer
161:主線圈 161: Main coil
162:第一副線圈 162: First coil
163:第二副線圈 163: Second coil
170:第二輸出級電路 170: Second output stage circuit
180:偵測及控制電路 180: Detection and control circuit
CR:諧振電容器 CR: Resonance capacitor
DT:工作週期 DT: Working cycle
LM:激磁電感器 LM: Magnetizing inductor
LR:漏電感器 LR: Leakage Inductor
LU:升壓電感器 LU: Boost Inductor
MD1:純濾波模式 MD1: Pure filter mode
MD2:突波吸收模式 MD2: Surge absorption mode
RS:感測電阻器 RS: Sensing resistor
VC:控制電位 VC: control potential
VE:中間電位 VE: intermediate potential
VF1:第一濾波電位 VF1: First filter potential
VF2:第二濾波電位 VF2: Second filter potential
VG1:第一驅動電位 VG1: first driving potential
VG2:第二驅動電位 VG2: Second driving potential
VG3:第三驅動電位 VG3: The third driving potential
VIN1:第一輸入電位 VIN1: first input potential
VIN2:第二輸入電位 VIN2: Second input potential
VOUT:輸出電位 VOUT: output voltage
VR:整流電位 VR: Rectification potential
VSS:接地電位 VSS: ground potential
VW:切換電位 VW: Switching potential
△V:電位差 △V: potential difference
Claims (10)
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| TW113133159A TWI886037B (en) | 2024-09-03 | 2024-09-03 | Power supply device for suppressing electromagnetic interference |
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| TW113133159A TWI886037B (en) | 2024-09-03 | 2024-09-03 | Power supply device for suppressing electromagnetic interference |
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| TW200717990A (en) * | 2005-09-12 | 2007-05-01 | Sampat Shekhawat | Vrms and rectified current sense full-bridge synchronous-rectification integrated with PFC |
| TW201004112A (en) * | 2008-03-25 | 2010-01-16 | Delta Electronics Inc | A power converter system that operates efficiently over a range of load conditions |
| TW201315125A (en) * | 2011-09-13 | 2013-04-01 | Fujitsu Ltd | Power supply apparatus |
| CN103872895A (en) * | 2012-12-13 | 2014-06-18 | 电力系统技术有限公司 | Controller for a Power Converter and Method of Operating the Same |
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