TWI883002B - Polysilicone composition for die bonding, cured product thereof and optical semiconductor device - Google Patents
Polysilicone composition for die bonding, cured product thereof and optical semiconductor device Download PDFInfo
- Publication number
- TWI883002B TWI883002B TW109116655A TW109116655A TWI883002B TW I883002 B TWI883002 B TW I883002B TW 109116655 A TW109116655 A TW 109116655A TW 109116655 A TW109116655 A TW 109116655A TW I883002 B TWI883002 B TW I883002B
- Authority
- TW
- Taiwan
- Prior art keywords
- component
- composition
- die bonding
- polysilicone
- mass
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Led Device Packages (AREA)
- Die Bonding (AREA)
Abstract
本發明提供可賦予硬度及晶粒剪切強度優異之硬化物且光半導體裝置中金焊墊污染經抑制之黏晶用聚矽氧組成物。 黏晶用聚矽氧組成物以特定調配比含有:(A)1分子中含有2個以上之烯基、於25℃下之黏度為100mPa・s以下之有機聚矽氧烷,(B)於23℃下為蠟狀或固體之特定三維網狀有機聚矽氧烷,(C)1分子中具有至少2個鍵結於矽原子之氫原子之特定有機氫聚矽氧烷,(D)含有環氧基之特定聚矽氧烷,及(E)鉑族金屬系觸媒。The present invention provides a polysilicone composition for die bonding that can provide a hardened material with excellent hardness and grain shear strength and suppresses gold pad contamination in optical semiconductor devices. The polysilicone composition for die bonding contains, in a specific ratio, (A) an organic polysiloxane having two or more alkenyl groups in one molecule and a viscosity of 100 mPa·s or less at 25°C, (B) a specific three-dimensional network organic polysiloxane that is waxy or solid at 23°C, (C) a specific organic hydropolysiloxane having at least two hydrogen atoms bonded to silicon atoms in one molecule, (D) a specific polysiloxane containing an epoxy group, and (E) a platinum group metal catalyst.
Description
本發明有關黏晶用聚矽氧組成物、其硬化物及使用其硬化物之光半導體裝置。The present invention relates to a polysilicon composition for die bonding, a cured product thereof, and an optical semiconductor device using the cured product thereof.
最近,發光二極體(以下稱為「LED」)元件之密封材及黏晶材,由於因LED元件之亮度提高而使元件之發熱變大,故使用耐久性良好之聚矽氧樹脂(專利文獻1、2)。尤其黏晶材中樹脂過軟時,於黏晶步驟之後進行之線黏合步驟中,發生無法進行黏合之缺點,故要求高硬度之黏晶材。Recently, silicone resins with good durability are used as sealing materials and die-bonding materials for light-emitting diode (hereinafter referred to as "LED") components, as the heat generated by the components increases with the brightness of LED components (Patent Documents 1 and 2). In particular, if the resin in the die-bonding material is too soft, the wire bonding step after the die-bonding step will cause the defect of being unable to be bonded, so a die-bonding material with high hardness is required.
又,LED裝置近年來進展小型化,而要求接著性更高之黏晶材。黏晶材之接著力不充分時,LED製造中於線黏合步驟會發生晶片剝離等,而於製造面上成為致命問題。迄今之聚矽氧黏晶材雖耐久性優異,但接著性不充分,而期望具有更高晶粒剪切強度之材料。In addition, LED devices have been miniaturized in recent years, and require a die-bonding material with higher adhesion. If the adhesion of the die-bonding material is insufficient, the chip will peel off during the wire bonding step in LED manufacturing, which becomes a fatal problem in the manufacturing process. Although the existing polysilicone die-bonding material has excellent durability, its adhesion is insufficient, and a material with higher die shear strength is desired.
除了高晶粒剪切強度以外,亦有黏晶材加熱硬化時產生之低分子成分污染晶片之金焊墊之情況,此將成為於線黏合步驟中產生缺點之原因。聚矽氧中雖為了提高接著性而使用具有接著性官能基之矽烷偶合劑,但一般矽烷偶合劑為低分子量,於黏晶之硬化步驟中施加的熱(100~180℃)會揮發,而有發生孔隙或晶粒剪切強度降低,成為發生金焊墊污染之原因的問題。亦即,期望能提高晶粒剪切強度同時無金焊墊污染之黏晶材。 [先前技術文獻] [專利文獻]In addition to high grain shear strength, there is also the problem that low molecular weight components generated when the die bonding material is heated and hardened may contaminate the gold pad of the chip, which will become the cause of defects in the wire bonding step. Although silane coupling agents with adhesive functional groups are used in polysilicone to improve adhesion, general silane coupling agents are low molecular weight and will evaporate when heat (100~180℃) is applied during the die bonding hardening step, causing pores or reduced grain shear strength, which may cause gold pad contamination. In other words, it is expected that the die bonding material can improve the grain shear strength while not contaminating the gold pad. [Prior technical literature] [Patent literature]
[專利文獻1] 日本特開2006-342200號公報 [專利文獻2] 日本特開2010-285571號公報[Patent document 1] Japanese Patent Publication No. 2006-342200 [Patent document 2] Japanese Patent Publication No. 2010-285571
[發明欲解決之課題][Problems to be solved by the invention]
本發明係鑑於上述情況而完成者,目的在於提供可賦予硬度及晶粒剪切強度優異之硬化物且光半導體裝置中金焊墊污染經抑制之黏晶用聚矽氧組成物。 [用以解決課題之手段]The present invention was completed in view of the above situation, and its purpose is to provide a polysilicon composition for die bonding that can provide a hardened material with excellent hardness and grain shear strength and suppress gold pad contamination in optical semiconductor devices. [Means for solving the problem]
為了達成上述課題,本發明提供含有下述(A)成分~(E)成分之黏晶用聚矽氧組成物。 (A)1分子中含有2個以上烯基、於25℃下之黏度為100 mPa・s以下之有機聚矽氧烷, (B)以下述式(1)表示,於23℃下為蠟狀或固體之三維網狀有機聚矽氧烷:相對於(A)成分及(B)成分之合計100質量份,為70~95質量份, (式中,R1 分別為相同或不同,不含烯基之取代或非取代一價烴基,R2 分別為相同或不同之烯基,a、b、c、d、e、f、g及h分別為滿足a≧0、b≧0、c≧0、d≧0、e≧0、f≧0、g≧0及h≧0之數,但係滿足b+c>0,f+g+h>0且a+b+c+d+e+f+g+h=1之數) (C)以下述平均組成式(2)表示,1分子中具有至少2個鍵結於矽原子之氫原子之有機氫聚矽氧烷:相對於(A)成分及(B)成分中之全部鍵結於矽原子之烯基之合計數,(C)成分中之鍵結於矽原子之氫原子之數成為0.5~5.0倍之量, (式中,R1 與前述相同,i及j係滿足0.7≦i≦2.1、0.001≦j≦1.0且0.8≦i+j≦3.0之數) (D)以下述式(3)表示之含有環氧基之聚矽氧烷:相對於(A)成分、(B)成分及(C)成分之合計100質量份為1~25質量份, (式中,R1 與前述相同,R3 分別為相同或不同之含環氧基之基,R4 分別相同或不同為不含烯基之取代或非取代之一價烴基,k及m分別為滿足k>0、m≧0及k+m=1之數,n係滿足0≦n≦2之數), (E)鉑族金屬系觸媒:相對於(A)成分、(B)成分、(C)成分及(D)成分之合計質量,以鉑屬金屬元素之質量換算為1~500ppm。In order to achieve the above-mentioned problem, the present invention provides a polysiloxane composition for bonding a die, comprising the following components (A) to (E). (A) an organic polysiloxane having two or more alkenyl groups in one molecule and a viscosity of 100 mPa·s or less at 25°C, (B) a three-dimensional network organic polysiloxane represented by the following formula (1) and in a waxy or solid state at 23°C: 70 to 95 parts by weight relative to 100 parts by weight of the total of components (A) and (B), (In the formula, R1 is the same or different, substituted or unsubstituted monovalent hydrocarbon group not containing alkenyl group, R2 is the same or different alkenyl group, a, b, c, d, e, f, g and h are numbers satisfying a≧0, b≧0, c≧0, d≧0, e≧0, f≧0, g≧0 and h≧0, but are numbers satisfying b+c>0, f+g+h>0 and a+b+c+d+e+f+g+h=1) (C) an organohydropolysiloxane represented by the following average composition formula (2) having at least two hydrogen atoms bonded to silicon atoms in one molecule: the number of hydrogen atoms bonded to silicon atoms in component (C) is 0.5 to 5.0 times the total number of alkenyl groups bonded to silicon atoms in components (A) and (B), (wherein, R1 is the same as above, i and j are numbers satisfying 0.7≦i≦2.1, 0.001≦j≦1.0 and 0.8≦i+j≦3.0) (D) an epoxy group-containing polysiloxane represented by the following formula (3): 1 to 25 parts by weight relative to 100 parts by weight of the total of the components (A), (B) and (C), (wherein, R1 is the same as above, R3 is the same or different epoxy-containing group, R4 is the same or different substituted or unsubstituted monovalent hydrocarbon group not containing alkenyl group, k and m are numbers satisfying k>0, m≧0 and k+m=1, and n is a number satisfying 0≦n≦2), (E) Platinum metal catalyst: 1-500ppm in terms of mass of platinum metal element relative to the total mass of component (A), component (B), component (C) and component (D).
依據本發明之黏晶用聚矽氧組成物,可賦予硬度及晶粒剪切強度優異且光半導體裝置中金焊墊污染經抑制之硬化物。The polysilicone composition for die bonding according to the present invention can provide a hardened material with excellent hardness and die shear strength and suppress contamination of gold pads in optical semiconductor devices.
前述(A)成分較佳係以下述式(4)表示之有機聚矽氧烷, (式中,R1 及R2 與前述相同,o、p、q、r分別為滿足q≧0、r≧0、o≧0、p≧0之數,但係滿足q+r>0、r+o>0、o+p>0且o+p+q+r=1之數)。The component (A) is preferably an organic polysiloxane represented by the following formula (4): (In the formula, R1 and R2 are the same as above, o, p, q, r are numbers satisfying q≧0, r≧0, o≧0, p≧0 respectively, but are numbers satisfying q+r>0, r+o>0, o+p>0 and o+p+q+r=1).
前述(A)成分若為前述特性之有機聚矽氧烷,則黏晶用聚矽氧組成物成為可賦予硬度及晶粒剪切強度更優異且光半導體裝置中金焊墊污染更受抑制之硬化物者。If the aforementioned component (A) is an organic polysiloxane having the aforementioned characteristics, the polysilicone composition for die bonding can be a hardened material that can provide better hardness and die shear strength and can further suppress contamination of the gold pad in the optical semiconductor device.
前述式(1)中,較佳b>0且h>0。 前述式(1)中若b>0且h>0,則黏晶用聚矽氧組成物成為可賦予硬度及晶粒剪切強度更優異,特別是可賦予接著強度並且光半導體裝置中金焊墊污染更受抑制之硬化物者。In the above formula (1), preferably b>0 and h>0. If b>0 and h>0 in the above formula (1), the polysilicone composition for die bonding becomes a hardened material that can provide better hardness and grain shear strength, especially can provide bonding strength and suppress gold pad contamination in optical semiconductor devices.
前述(C)成分較佳係於1大氣壓下於150℃加熱30分鐘時的質量減少為1質量%以下者。 前述(C)成分若為前述者,則黏晶用聚矽氧組成物成為光半導體裝置中金焊墊污染更受抑制者。The aforementioned component (C) is preferably one whose mass decreases to less than 1 mass % when heated at 150°C for 30 minutes under 1 atmosphere. If the aforementioned component (C) is the aforementioned, the polysilicone composition for die bonding becomes one in which gold pad contamination in optical semiconductor devices is more suppressed.
前述(D)成分較佳係於1大氣壓下於150℃加熱30分鐘時的質量減少為5質量%以下者。 前述(D)成分若為前述者,則黏晶用聚矽氧組成物成為光半導體裝置中金焊墊污染更受抑制者。The aforementioned component (D) is preferably one whose mass reduction is 5 mass % or less when heated at 150°C for 30 minutes under 1 atmosphere. If the aforementioned component (D) is the aforementioned, the polysilicone composition for die bonding becomes one in which gold pad contamination in optical semiconductor devices is more suppressed.
前述(D)成分中,較佳R3 係以下述式(5)表示之基, (式中,s為1~6之整數,虛線表示鍵結鍵)。In the above-mentioned component (D), preferably R 3 is a group represented by the following formula (5): (Where s is an integer from 1 to 6, and the dashed line represents a key bond).
R3 若為前述特定之官能基,則黏晶用聚矽氧組成物成為可賦予硬度及晶粒剪切強度更優異且光半導體裝置中金焊墊污染更受抑制之硬化物者。When R3 is the aforementioned specific functional group, the polysilicone composition for die attach becomes a hardened material that can be endowed with better hardness and die shear strength and can suppress gold pad contamination in optical semiconductor devices.
前述組成物中較佳全部R1 中之80莫耳%以上為甲基。 前述組成物中若全部R1 中之80莫耳%以上為甲基,則黏晶用聚矽氧組成物成為可賦予耐熱性、耐光性(耐紫外線性)及對因熱及紫外線等之應力所致之變色等之劣化的耐性優異之硬化物者。In the aforementioned composition, preferably 80 mol% or more of all R1s are methyl groups. If 80 mol% or more of all R1s in the aforementioned composition are methyl groups, the polysilicone composition for die bonding becomes a cured product that can be endowed with excellent heat resistance, light resistance (ultraviolet resistance), and resistance to deterioration such as discoloration due to stress such as heat and ultraviolet rays.
前述組成物較佳含有(F)BET比表面積為100~ 400m2 /g之發煙氧化矽。 前述組成物若含有前述發煙氧化矽,則前述組成物成為觸變性及作業性優異者。The composition preferably contains (F) fumed silica having a BET specific surface area of 100 to 400 m 2 /g. If the composition contains the fumed silica, the composition has excellent thixotropic properties and workability.
又本發明提供一種聚矽氧硬化物,其係前述黏晶用聚矽氧組成物的硬化物。 依據這種聚矽氧硬化物,成為硬度及晶粒剪切強度優異,與基板・LED晶片等之接著力高,尤其可作為LED元件等之黏晶所用之黏晶材者。The present invention also provides a polysilicone hardened material, which is a hardened material of the polysilicone composition for die bonding. According to this polysilicone hardened material, it has excellent hardness and grain shear strength, and has high bonding strength with substrates, LED chips, etc., and can be used as a die bonding material for die bonding of LED components, etc.
再者,本發明提供一種光半導體裝置,其係前述聚矽氧硬化物將光半導體元件予以黏晶者。 依據此種光半導體裝置,由於使用前述聚矽氧硬化物作為硬度及晶粒剪切強度優異,與基板・LED等之接著力高之黏晶材,故成為信賴性較高者。 [發明效果]Furthermore, the present invention provides an optical semiconductor device in which an optical semiconductor element is bonded with the aforementioned polysilicone cured material. According to this optical semiconductor device, since the aforementioned polysilicone cured material is used as a bonding material with excellent hardness and grain shear strength and high bonding strength with substrates, LEDs, etc., it becomes a highly reliable one. [Effect of the invention]
如以上,依據本發明之黏晶用聚矽氧組成物,由於可賦予硬度及晶粒剪切強度優異之硬化物且光半導體裝置中金焊墊污染經抑制者,故作為LED元件等之黏晶所用之黏晶材特別有用。而且,於黏晶步驟之後進行之線黏合步驟中,難以發生晶片剝離、無法黏晶等之缺點,以該聚矽氧硬化物將光半導體元件黏晶之光半導體裝置之信賴性高,其生產性亦提高。As described above, the polysilicone composition for die bonding according to the present invention is particularly useful as a die bonding material for die bonding of LED components, etc., because it can provide a hardened material with excellent hardness and grain shear strength and suppresses gold pad contamination in optical semiconductor devices. In addition, in the wire bonding step performed after the die bonding step, it is difficult to cause defects such as chip peeling and inability to bond the die. The reliability of the optical semiconductor device in which the optical semiconductor component is bonded by the polysilicone hardened material is high, and its productivity is also improved.
如上述,要求開發金焊墊污染較少之LED元件等之黏晶所用之黏晶材,可賦予硬度及晶粒剪切強度優異之聚矽氧硬化物的黏晶用聚矽氧組成物。As mentioned above, it is required to develop a die bonding material for LED components and the like with less gold pad contamination, and to provide a polysilicone composition for die bonding that can provide a polysilicone cured product with excellent hardness and grain shear strength.
本發明人等針對上述課題重複積極檢討之結果,發現若為包含後述(A)、(B)、(C)、(D)及(E)成分之黏晶用聚矽氧組成物,可達成上述課題,因而完成本發明。As a result of repeated and active research on the above-mentioned subject, the inventors of the present invention have found that a polysilicone composition for die bonding comprising the components (A), (B), (C), (D) and (E) described below can achieve the above-mentioned subject, thereby completing the present invention.
亦即,本發明係含有下述(A)成分~(E)成分之黏晶用聚矽氧組成物。 (A)1分子中含有2個以上烯基、於25℃下之黏度為100 mPa・s以下之有機聚矽氧烷, (B)以下述式(1)表示,於23℃下為蠟狀或固體之三維網狀有機聚矽氧烷:相對於(A)成分及(B)成分之合計100質量份,為70~95質量份, (式中,R1 分別為相同或不同,不含烯基之取代或非取代一價烴基,R2 分別為相同或不同之烯基,a、b、c、d、e、f、g及h分別為滿足a≧0、b≧0、c≧0、d≧0、e≧0、f≧0、g≧0及h≧0之數,但係滿足b+c>0,f+g+h>0且a+ b+c+d+e+f+g+h=1之數), (C)以下述平均組成式(2)表示,1分子中具有至少2個鍵結於矽原子之氫原子之有機氫聚矽氧烷:相對於(A)成分及(B)成分中之全部鍵結於矽原子之烯基之合計數,(C)成分中之鍵結於矽原子之氫原子之數成為0.5~5.0倍之量, (式中,R1 與前述相同,i及j係滿足0.7≦i≦2.1、0.001≦j≦1.0且0.8≦i+j≦3.0之數), (D)以下述式(3)表示之含有環氧基之聚矽氧烷:相對於(A)成分、(B)成分及(C)成分之合計100質量份為1~25質量份, (式中,R1 與前述相同,R3 分別為相同或不同之含環氧基之基,R4 分別相同或不同為不含烯基之取代或非取代之一價烴基,k及m分別為滿足k>0、m≧0及k+m=1之數,n係滿足0≦n≦2之數), (E)鉑族金屬系觸媒:相對於(A)成分、(B)成分、(C)成分及(D)成分之合計質量,以鉑屬金屬元素之質量換算為1~500ppm。That is, the present invention is a polysiloxane composition for bonding a die containing the following components (A) to (E). (A) an organic polysiloxane having two or more alkenyl groups in one molecule and a viscosity of 100 mPa·s or less at 25°C, (B) a three-dimensional network organic polysiloxane represented by the following formula (1) and in a waxy or solid state at 23°C: 70 to 95 parts by weight relative to 100 parts by weight of the total of components (A) and (B), (wherein, R1 is the same or different, substituted or unsubstituted monovalent alkyl group not containing alkenyl, R2 is the same or different alkenyl, a, b, c, d, e, f, g and h are numbers satisfying a≧0, b≧0, c≧0, d≧0, e≧0, f≧0, g≧0 and h≧0, but are numbers satisfying b+c>0, f+g+h>0 and a+ b+c+d+e+f+g+h=1), (C) an organohydropolysiloxane represented by the following average composition formula (2) having at least two hydrogen atoms bonded to silicon atoms in one molecule: the number of hydrogen atoms bonded to silicon atoms in component (C) is 0.5 to 5.0 times the total number of alkenyl groups bonded to silicon atoms in components (A) and (B), (wherein, R 1 is the same as above, i and j are numbers satisfying 0.7≦i≦2.1, 0.001≦j≦1.0 and 0.8≦i+j≦3.0), (D) an epoxy group-containing polysiloxane represented by the following formula (3): 1 to 25 parts by weight relative to 100 parts by weight of the total of the components (A), (B) and (C), (wherein, R1 is the same as above, R3 is the same or different epoxy-containing group, R4 is the same or different substituted or unsubstituted monovalent hydrocarbon group not containing alkenyl group, k and m are numbers satisfying k>0, m≧0 and k+m=1, and n is a number satisfying 0≦n≦2), (E) Platinum metal catalyst: 1-500ppm in terms of mass of platinum metal element relative to the total mass of component (A), component (B), component (C) and component (D).
以下針對本發明詳細說明,但本發明並未限定於此。 [黏晶用聚矽氧組成物] 本發明之黏晶用聚矽氧組成物含有下述(A)成分~(E)成分。 以下針對各成分詳細說明。The present invention is described in detail below, but the present invention is not limited thereto. [Polysilicone composition for die bonding] The polysilicone composition for die bonding of the present invention contains the following components (A) to (E). The following describes each component in detail.
<(A)成分> (A)成分係1分子中含有2個以上烯基、於25℃下之黏度為100mPa・s以下之有機聚矽氧烷。 (A)成分之黏度於25℃下之利用旋轉黏度計之測定值為100mPa・s以下,較佳為30mPa・s以下。超過100mPa・s之情況,由於黏晶用聚矽氧組成物之黏度變高,故藉由黏晶機於LED基板上塗佈組成物之步驟中處理困難。又,以下中,只要未特別指明,則黏度為25℃下之利用旋轉黏度計之測定值。<Component (A)> Component (A) is an organic polysiloxane having two or more alkenyl groups in one molecule and a viscosity of 100 mPa・s or less at 25°C. The viscosity of component (A) is 100 mPa・s or less, preferably 30 mPa・s or less, as measured by a rotational viscometer at 25°C. When the viscosity exceeds 100 mPa・s, the viscosity of the polysilicone composition for die bonding becomes high, making it difficult to handle the composition in the step of coating the composition on the LED substrate by a die bonding machine. In the following, unless otherwise specified, the viscosity is the value measured by a rotational viscometer at 25°C.
作為(A)成分所含之烯基並未特別限定,但較佳為乙烯基、烯丙基、乙炔基等之碳原子數2~10之烯基,更佳為2~6之烯基,又更佳為乙烯基。The alkenyl group contained in the component (A) is not particularly limited, but is preferably an alkenyl group having 2 to 10 carbon atoms such as vinyl, allyl, ethynyl, etc., more preferably an alkenyl group having 2 to 6 carbon atoms, and still more preferably vinyl.
(A)成分可為不含烯基之取代或非取代一價烴基,作為其例若為不具有烯基者,則未特別限定,但較佳為碳原子數1~8之取代或非取代之一價烴基。作為該一價烴基可例示甲基、乙基、丙基、丁基等之烷基,環己基、環戊基等之環烷基,苯基、甲苯基、二甲苯基等之芳基,苄基、苯基乙基等之芳烷基,氯甲基、氯丙基、氯環己基等之鹵化烴基等。較佳為烷基,更佳為甲基。The component (A) may be a substituted or unsubstituted monovalent hydrocarbon group not containing an alkenyl group. For example, if it does not have an alkenyl group, it is not particularly limited, but preferably a substituted or unsubstituted monovalent hydrocarbon group having 1 to 8 carbon atoms. Examples of the monovalent hydrocarbon group include alkyl groups such as methyl, ethyl, propyl, and butyl, cycloalkyl groups such as cyclohexyl and cyclopentyl, aryl groups such as phenyl, tolyl, and xylyl, aralkyl groups such as benzyl and phenylethyl, and halogenated hydrocarbon groups such as chloromethyl, chloropropyl, and chlorocyclohexyl. An alkyl group is preferred, and a methyl group is more preferred.
作為(A)成分,舉例為以下述平均組成式(4)表示之分支狀有機聚矽氧烷。 (式中,R1 分別為相同或不同,不含烯基之取代或非取代一價烴基,R2 分別為相同或不同之烯基,o、p、q、r分別為滿足q≧0、r≧0、o≧0、p≧0之數,但係滿足q+r>0、r+o>0、o+p>0且o+p+q+r=1之數)。As the component (A), a branched organic polysiloxane represented by the following average composition formula (4) is exemplified. (wherein, R1 is the same or different, substituted or unsubstituted monovalent hydrocarbon group not containing alkenyl, R2 is the same or different alkenyl, o, p, q, r are numbers satisfying q≧0, r≧0, o≧0, p≧0, but are numbers satisfying q+r>0, r+o>0, o+p>0 and o+p+q+r=1).
作為R1 表示之不含烯基之取代或非取代之一價烴基,若為不具有烯基者,則未特別限定,但較佳為碳原子數1~8之取代或非取代之一價烴基。作為該一價烴基可例示甲基、乙基、丙基、丁基等之烷基,環己基、環戊基等之環烷基,苯基、甲苯基、二甲苯基等之芳基,苄基、苯基乙基等之芳烷基,氯甲基、氯丙基、氯環己基等之鹵化烴基等。較佳為烷基,更佳為甲基。The substituted or unsubstituted monovalent hydrocarbon group not containing an alkenyl group represented by R1 is not particularly limited if it does not have an alkenyl group, but is preferably a substituted or unsubstituted monovalent hydrocarbon group having 1 to 8 carbon atoms. Examples of the monovalent hydrocarbon group include alkyl groups such as methyl, ethyl, propyl, and butyl, cycloalkyl groups such as cyclohexyl and cyclopentyl, aryl groups such as phenyl, tolyl, and xylyl, aralkyl groups such as benzyl and phenylethyl, and halogenated hydrocarbon groups such as chloromethyl, chloropropyl, and chlorocyclohexyl. An alkyl group is preferred, and a methyl group is more preferred.
作為R2 表示之烯基並未特別限定,但較佳為乙烯基、烯丙基、乙炔基等之碳原子數2~10之烯基,更佳為碳數2~6之烯基,又更佳為乙烯基。The alkenyl group represented by R 2 is not particularly limited, but is preferably an alkenyl group having 2 to 10 carbon atoms such as vinyl, allyl, ethynyl, etc., more preferably an alkenyl group having 2 to 6 carbon atoms, and even more preferably vinyl.
作為分支狀有機聚矽氧烷之具體例,舉例為以下述式表示者等。 Specific examples of the branched organopolysiloxane include those represented by the following formula.
(A)成分亦可使用具有直鏈狀分子構造之有機聚矽氧烷。作為直鏈狀有機聚矽氧烷之具體例舉例為以下述式表示者。 (上述式中,括弧內之矽氧烷單位之排列順序可為任意)。 (A)成分可單獨使用一種,亦可併用兩種以上。As the component (A), an organopolysiloxane having a linear molecular structure may be used. Specific examples of the linear organopolysiloxane include those represented by the following formula. (In the above formula, the arrangement order of the siloxane units in the parentheses may be arbitrary.) The component (A) may be used alone or in combination of two or more.
<(B)成分> (B)成分係以下述平均組成式(1)表示,於23℃下為蠟狀或固體之三維網狀有機聚矽氧烷。(B)成分係用以維持硬化物之透明性,獲得補強性之成分,係於分子中含有鍵結於矽原子之烯基及SiO3/2 單位或SiO4/2 單位之至少一者之三維網狀之有機聚矽氧烷樹脂。此處,所謂「蠟狀」意指於23℃下之黏度為10,000,000mPa・s以上,尤其100,000,000 mPa・s以上之幾乎不顯示自我流動性之橡膠狀(生橡膠)。<Component (B)> Component (B) is a three-dimensional network organopolysiloxane represented by the following average composition formula (1) and is a waxy or solid three-dimensional network organopolysiloxane at 23°C. Component (B) is a component used to maintain the transparency of the cured product and obtain reinforcement, and is a three-dimensional network organopolysiloxane resin containing an olefin group bonded to a silicon atom and at least one of a SiO 3/2 unit or a SiO 4/2 unit in the molecule. Here, the so-called "waxy" means a rubbery (raw rubber) having a viscosity of 10,000,000 mPa·s or more, especially 100,000,000 mPa·s or more at 23°C and showing almost no self-fluidity.
(式中,R1 及R2 與前述相同,a、b、c、d、e、f、g及h分別為滿足a≧0、b≧0、c≧0、d≧0、e≧0、f≧0、g≧0及h≧0之數,但係滿足b+c>0,f+g+h>0且a+b+c+d+e+f+ g+h=1之數)。 (Wherein, R1 and R2 are the same as above, a, b, c, d, e, f, g and h are numbers satisfying a≧0, b≧0, c≧0, d≧0, e≧0, f≧0, g≧0 and h≧0 respectively, but are numbers satisfying b+c>0, f+g+h>0 and a+b+c+d+e+f+ g+h=1).
R1 舉例為與(A)成分中例示者相同者,較佳為碳原子數1~8之烷基,更佳為甲基。 R2 舉例為與(A)成分中例示者相同者,較佳為碳原子數2~10之烯基,更佳為碳原子數2~6之烯基,又更佳為乙烯基。 較好a為0~0.65,b為0.1~0.65,c為0~0.65,d為0~0.5,e為0~0.5,f為0~0.8,g為0~0.8,h為0~0.6之數。且f+g+h較好為0.05以上,更佳為0.1~0.9之數,又更佳為0.2~0.6之數。 R1 is exemplified as the same as those exemplified in component (A), preferably an alkyl group having 1 to 8 carbon atoms, more preferably a methyl group. R2 is exemplified as the same as those exemplified in component (A), preferably an alkenyl group having 2 to 10 carbon atoms, more preferably an alkenyl group having 2 to 6 carbon atoms, and more preferably a vinyl group. Preferably, a is 0 to 0.65, b is 0.1 to 0.65, c is 0 to 0.65, d is 0 to 0.5, e is 0 to 0.5, f is 0 to 0.8, g is 0 to 0.8, and h is 0 to 0.6. And f+g+h is preferably 0.05 or more, more preferably 0.1 to 0.9, and more preferably 0.2 to 0.6.
(B)成分中,鍵結至矽原子之烯基含量,較佳(B)成分每100g為0.01~1mol之範圍,更佳為0.1~0.6mol之範圍。上述含量若為0.01~1mol之範圍,則交聯反應充分進行,獲得更高硬度之硬化物。 In the (B) component, the content of the olefin group bonded to the silicon atom is preferably in the range of 0.01 to 1 mol per 100 g of the (B) component, and more preferably in the range of 0.1 to 0.6 mol. If the above content is in the range of 0.01 to 1 mol, the crosslinking reaction will proceed fully, and a hardened material with higher hardness will be obtained.
(B)成分較佳具有R2 3SiO1/2單位及SiO4/2單位(亦即b>0且h>0),該情況下,可對由組成物所得之硬化物賦予接著強度。又,(B)成分之由SiO4/2單位及/或SiO3/2單位所成之分支構造為必須,但亦可進而含有甲基乙烯基矽氧基單位、二甲基矽氧基單位等之SiO2/2(SiO)單位、二甲基乙烯基矽氧基單位、三甲基矽氧基單位等之SiO1/2單位。SiO4/2單位及/或SiO3/2單位之含量較佳為(B)成分之有機聚矽氧烷樹脂中之全部矽氧烷單位之5莫耳%以上,更好為10莫耳~95莫耳%,特佳為20~60莫耳%。 The component (B) preferably has R 2 3 SiO 1/2 units and SiO 4/2 units (i.e., b>0 and h>0), in which case, bonding strength can be imparted to the hardened material obtained from the composition. In addition, the component (B) must have a branched structure consisting of SiO 4/2 units and/or SiO 3/2 units, but may further contain SiO 2/2 (SiO) units such as methylvinylsiloxy units and dimethylsiloxy units, and SiO 1/2 units such as dimethylvinylsiloxy units and trimethylsiloxy units. The content of SiO 4/2 units and/or SiO 3/2 units is preferably 5 mol% or more of all siloxane units in the organopolysiloxane resin of component (B), more preferably 10 mol% to 95 mol%, particularly preferably 20 to 60 mol%.
(B)成分之含量,相對於(A)成分及(B)成分之合計100質量份為70~95質量份,較佳為75~95質量份,更佳為80~90質量份。(B)成分之調配量未達70質量份時,有接著性差而無法獲得高硬度之硬化物之情況,超過95質量份時,組成物之黏度顯著變高,轉印變困難,將組成物使用於黏晶材等使用時之處理變困難。 The content of component (B) is 70-95 parts by mass relative to 100 parts by mass of the total of components (A) and (B), preferably 75-95 parts by mass, and more preferably 80-90 parts by mass. When the amount of component (B) is less than 70 parts by mass, the adhesion is poor and a hardened material with high hardness cannot be obtained. When it exceeds 95 parts by mass, the viscosity of the composition becomes significantly higher, transfer becomes difficult, and handling of the composition when used as a bonding material becomes difficult.
作為(B)成分之具體例舉例為例如以下者。 ((CH2=CH)3SiO1/2)0.1((CH2=CH)(CH3)2SiO1/ 2)0.2((CH3)3SiO1/2)0.35(SiO4/2)0.35、 ((CH2=CH)3SiO1/2)0.2((CH3)3SiO1/2)0.1(Si O4/2)0.7、 ((CH2=CH)3SiO1/2)0.07((CH3)3SiO1/2)0.4(S iO4/2)0.53、 ((CH2=CH)3SiO1/2)0.14((CH3)3SiO1/2)0.32( SiO4/2)0.54、 ((CH2=CH)3SiO1/2)0.07((CH3)3SiO1/2)0.33( SiO4/2)0.6、 ((CH2=CH)3SiO1/2)0.1((CH3)3SiO1/2)0.1((C H3)2SiO)0.2((CH3)SiO3/2)0.6、 ((CH2=CH)3SiO1/2)0.07((CH3)3SiO1/2)0.13((CH3)2SiO)0.2(SiO4/2)0.6、((CH2=CH)3SiO1/2)0.3(SiO4/2)0.7、((CH2=CH)3SiO1/2)0.2((CH3)SiO3/2)0.8、((CH2=CH)3SiO1/2)0.2((CH3)SiO3/2)0.6(SiO4/2)0.2、(B)成分可單獨使用一種亦可併用兩種以上。 Specific examples of the component (B) include the following. ((CH 2 =CH) 3 SiO 1/2 ) 0.1 ((CH 2 =CH)(CH 3 ) 2 SiO 1/ 2 ) 0.2 ((CH 3 ) 3 SiO 1/2 ) 0.35 (SiO 4/2 ) 0.35 , ((CH 2 =CH) 3 SiO 1/2 ) 0.2 ((CH 3 ) 3 SiO 1/2 ) 0.1 (Si O 4/2 ) 0.7 , ((CH 2 =CH) 3 SiO 1/2 ) 0.07 ((CH 3 ) 3 SiO 1/2 ) 0.4 (S iO 4/2 ) 0.53 , ((CH 2 =CH) 3 SiO 1/2 ) 0.14 ((CH 3 ) 3 SiO 1/2 ) 0.32 (SiO 4/2 ) 0.54 , ((CH 2 =CH) 3 SiO 1/2 ) 0.07 ((CH 3 ) 3 SiO 1/2 ) 0.33 (SiO 4/2 ) 0.6 , ((CH 2 =CH) 3 SiO 1/2 ) 0.1 ((CH 3 ) 3 SiO 1/2 ) 0.1 ((CH 3 ) 2 SiO) 0.2 ((CH 3 )SiO 3/2 ) 0.6 , ((CH 2 =CH) 3 SiO 1/2 ) 0.07 ((CH 3 ) 3 SiO 1/2 ) 0.13 ((CH 3 ) 2 SiO) 0.2 (SiO 4/2 ) 0.6 , ((CH 2 =CH) 3 SiO 1/2 ) 0.3 (SiO 4/2 ) 0.7 、((CH 2 =CH) 3 SiO 1/2 ) 0.2 ((CH 3 )SiO 3/2 ) 0.8 、((CH 2 =CH) 3 SiO 1/2 ) 0.2 ((CH 3 )SiO 3/2 ) 0.6 (SiO 4/2 ) 0.2 、(B) components may be used alone or in combination of two or more.
(C)成分係作為藉由與(A)成分及(B)成分中所含之烯基之氫矽烷化反應而交聯之交聯劑發揮作用。(C)成分係以下述平均組成式(2)表示之1分子中具有至少2個鍵結至矽原子之氫原子(即Si-H基)之有機氫聚矽氧烷。 Component (C) acts as a crosslinking agent by crosslinking through a hydrosilylation reaction with alkenyl groups contained in components (A) and (B). Component (C) is an organic hydropolysiloxane represented by the following average composition formula (2) having at least two hydrogen atoms (i.e., Si-H groups) bonded to silicon atoms in one molecule.
R1 iHjSiO(4-i-j)/2 (2) R 1 i H j SiO (4-ij)/2 (2)
(式中,R1與前述相同,i及j係滿足0.7≦i≦2.1、0.001≦j≦1.0且0.8≦i+j≦3.0之數)。 (wherein, R1 is the same as above, and i and j are numbers satisfying 0.7≦i≦2.1, 0.001≦j≦1.0, and 0.8≦i+j≦3.0).
R1舉例為與(A)成分中例示者相同者,較佳為碳原子數1~8之烷基,更佳為甲基。 Examples of R 1 are the same as those exemplified in the component (A), preferably an alkyl group having 1 to 8 carbon atoms, more preferably a methyl group.
又,本發明之組成物中之以R1表示之烯基以外之鍵結至矽原子之全部一價烴基之總數所佔之甲基的比例較佳為80莫耳%以上(亦即前述R1中80莫耳%以上為甲基),特佳為90莫耳%以上時,由於耐熱性、耐光性(耐紫外線性)及對因熱及紫外線等之應力所致之變色等之劣化的耐性優異故而較佳。 In addition, the ratio of methyl groups to the total number of all monovalent hydrocarbon groups other than the alkenyl groups represented by R1 in the composition of the present invention bonded to silicon atoms is preferably 80 mol% or more (i.e., 80 mol% or more of the aforementioned R1 are methyl groups), and particularly preferably 90 mol% or more, because the heat resistance, light resistance (ultraviolet resistance) and resistance to deterioration such as discoloration due to stress such as heat and ultraviolet rays are excellent.
(C)成分於1分子中具有至少2個,較佳2~200個,更佳3~100個,又更佳4~50個鍵結於矽原子之氫原子(Si-H基)。The component (C) has at least 2, preferably 2 to 200, more preferably 3 to 100, and even more preferably 4 to 50 hydrogen atoms (Si—H groups) bonded to silicon atoms in one molecule.
(C)成分之調配量,基於交聯平衡之觀點,相對於(A)及(B)成分中之全部鍵結於矽原子之烯基,(C)成分之鍵結至矽原子之氫原子(Si-H基)數成為0.5~5.0倍,較佳為0.7~3.0倍之量。前述氫原子之數相對於前述烯基之合計數若未達0.5倍,則交聯未充分進行,無法獲得硬度優異之硬化物。前述氫原子之數相對於前述烯基之合計數若多於5.0倍,則缺乏聚矽氧硬化物之柔軟性,聚矽氧硬化物變脆。The amount of component (C) is such that the number of hydrogen atoms (Si-H groups) bonded to silicon atoms in component (C) is 0.5 to 5.0 times, preferably 0.7 to 3.0 times, relative to the total number of alkenyl groups bonded to silicon atoms in components (A) and (B) from the viewpoint of crosslinking balance. If the number of hydrogen atoms relative to the total number of alkenyl groups is less than 0.5 times, crosslinking is not fully performed and a hardened material with excellent hardness cannot be obtained. If the number of hydrogen atoms relative to the total number of alkenyl groups is more than 5.0 times, the polysilicone hardened material lacks flexibility and becomes brittle.
(C)成分於25℃之黏度並未特別限定,但較佳為100mPa・s以下,更佳為5~100 mPa・s之範圍。The viscosity of the component (C) at 25°C is not particularly limited, but is preferably 100 mPa·s or less, more preferably in the range of 5 to 100 mPa·s.
(C)成分於1大氣壓下於150℃加熱30分鐘後的質量減少,相對於加熱前之質量較佳為1質量%以下。若為該範圍,則可更減低金焊墊污染。 (C)成分之有機氫聚矽氧烷之分子構造可為直鏈狀、環狀、分支鏈狀、三維網狀構造之任一者,1分子中之矽原子數較佳為10~300個,更佳為50~200個。若如此,則可獲得硬化時揮發分較少,金焊墊污染更少之組成物。The mass reduction of the component (C) after heating at 150°C for 30 minutes under 1 atmosphere is preferably less than 1 mass % relative to the mass before heating. If it is within this range, the gold pad contamination can be further reduced. The molecular structure of the organohydropolysiloxane of the component (C) can be any of a straight chain, a ring, a branched chain, and a three-dimensional network structure, and the number of silicon atoms in one molecule is preferably 10 to 300, and more preferably 50 to 200. If so, a composition with less volatile matter during hardening and less gold pad contamination can be obtained.
作為(C)成分之有機氫聚矽氧烷,可舉例為1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基環四矽氧烷、三(氫二甲基矽氧基)甲基矽烷、三(氫二甲基矽氧基)苯基矽烷、甲基氫環聚矽氧烷、甲基氫矽氧烷・二甲基矽氧烷環狀共聚物、兩末端三甲基矽氧基封端甲基氫聚矽氧烷、兩末端三甲基矽氧基封端二甲基矽氧烷・甲基氫矽氧烷共聚物、兩末端二甲基氫矽氧基封端二甲基聚矽氧烷、兩末端二甲基氫矽氧基封端甲基氫聚矽氧烷、兩末端二甲基氫矽氧基封端二甲基矽氧烷・甲基氫矽氧烷共聚物、兩末端三甲基矽氧基封端甲基氫矽氧烷・二苯基矽氧烷共聚物、兩末端三甲基矽氧基封端甲基氫矽氧烷・二苯基矽氧烷・二甲基矽氧烷共聚物、兩末端三甲基矽氧基封端甲基氫矽氧烷・甲基苯基矽氧烷・二甲基矽氧烷共聚物、兩末端二甲基氫矽氧基封端甲基氫矽氧烷・二甲基矽氧烷・二苯基矽氧烷共聚物、兩末端二甲基氫矽氧基封端甲基氫矽氧烷・二甲基矽氧烷・甲基苯基矽氧烷共聚物、由(CH3 )2 HSiO1/2 單位、(CH3 )3 SiO1/2 單位及SiO4/2 單位所成之共聚物、由 (CH3 )2 HSiO1/2 單位及SiO4/2 單位所成之共聚物、由 (CH3 )2 HSiO1/2 單位、SiO4/2 單位及(C6 H5 )3 SiO1/2 單位所成之共聚物等,此外亦舉例為下述通式(6)或(7)表示者。 (式中,R1 如前述,t為2~40,較佳為8~35之整數,u為6~8之整數)。Examples of the organohydropolysiloxane as the component (C) include 1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethylcyclotetrasiloxane, tri(hydrogenated dimethylsiloxy)methylsilane, tri(hydrogenated dimethylsiloxy)phenylsilane, methylhydrocyclopolysiloxane, methylhydrocyclopolysiloxane-dimethylsiloxane cyclic copolymer, methylhydrocyclopolysiloxane terminated with trimethylsiloxy groups at both ends, dimethylhydrocyclopolysiloxane-methylhydrocyclopolysiloxane copolymer terminated with trimethylsiloxy groups at both ends, dimethylhydrocyclopolysiloxane terminated with dimethylhydrocyclopolysiloxane at both ends, methylhydrocyclopolysiloxane terminated with dimethylhydrocyclopolysiloxane at both ends, Dimethylhydrosiloxy-terminated dimethylsiloxane・methylhydrosiloxane copolymer, both ends trimethylsiloxy-terminated methylhydrosiloxane・diphenylsiloxane copolymer, both ends trimethylsiloxy-terminated methylhydrosiloxane・diphenylsiloxane・dimethylsiloxane copolymer, both ends trimethylsiloxy-terminated methylhydrosiloxane・methylphenylsiloxane・dimethylsiloxane copolymer, both ends dimethylhydrosiloxy-terminated methylhydrosiloxane・dimethylsiloxane・diphenylsiloxane copolymer, both ends dimethylhydrosiloxy-terminated methylhydrosiloxane・dimethylsiloxane・methylphenylsiloxane copolymer, (CH 3 ) 2 HSiO 1/2 unit, a copolymer composed of a (CH 3 ) 3 SiO 1/2 unit and a SiO 4/2 unit, a copolymer composed of a (CH 3 ) 2 HSiO 1/2 unit, a SiO 4/2 unit and a ( C 6 H 5 ) 3 SiO 1/2 unit , and the like. In addition, those represented by the following general formula ( 6 ) or (7) are also exemplified. (wherein, R1 is as described above, t is an integer between 2 and 40, preferably between 8 and 35, and u is an integer between 6 and 8).
作為(C)成分之具體例舉例為以下述式(8)表示者, (式中,t如前述,Me為甲基)、 以下述式表示者等。A specific example of the component (C) is represented by the following formula (8): (wherein t is as described above, and Me is a methyl group), those represented by the following formula, etc.
(上述式中,括弧內之矽氧烷單位之排列順序為任意)。 (In the above formula, the arrangement order of the siloxane units in the brackets is arbitrary).
(C)成分之有機氫聚矽氧烷可單獨使用一種亦可併用兩種以上。The organohydropolysiloxane of the component (C) may be used alone or in combination of two or more.
<(D)成分> (D)成分係以下述式(3)表示之含有環氧基之聚矽氧烷。 (式中,R1 與前述相同,R3 分別為相同或不同之含環氧基之基,R4 分別相同或不同為不含烯基之取代或非取代之一價烴基,k及m分別為滿足k>0、m≧0及k+m=1之數,n係滿足0≦n≦2之數)。<Component (D)> The component (D) is an epoxy group-containing polysiloxane represented by the following formula (3). (wherein, R1 is the same as described above, R3 is the same or different epoxy-containing group, R4 is the same or different substituted or unsubstituted monovalent hydrocarbon group not containing alkenyl, k and m are numbers satisfying k>0, m≧0 and k+m=1, and n is a number satisfying 0≦n≦2).
本發明之(D)成分由於係由SiO3/2 單位之重複而成之聚合物,故可提供低分子成分較少,接著性提高並且無金焊墊污染之組成物。Since the component (D) of the present invention is a polymer composed of repeated SiO 3/2 units, it can provide a composition with less low molecular weight components, improved adhesion and no gold pad contamination.
作為以R3 表示之含環氧基之基,舉例為脂環式環氧基或縮水甘油基等之介隔碳原子鍵結於矽原子之基,較佳具有縮水甘油基。更佳為γ-縮水甘油氧基丙基等之以下述式(5)表示之基、β-(3,4-環氧基環己基)乙基。 (式中,s為1~6之整數,虛線表示鍵結鍵)。 R1 舉例為與(A)成分中例示者相同者,較佳為碳原子數1~8之烷基,更佳為甲基。Examples of the epoxy group-containing group represented by R3 include a group bonded to a silicon atom via a carbon atom, such as an alicyclic epoxy group or a glycidyl group, and preferably a glycidyl group. More preferably, a group represented by the following formula (5) such as a γ-glycidyloxypropyl group or a β-(3,4-epoxycyclohexyl)ethyl group is used. (In the formula, s is an integer of 1 to 6, and the dotted line represents a bond.) Examples of R 1 are the same as those exemplified in component (A), preferably an alkyl group having 1 to 8 carbon atoms, more preferably a methyl group.
作為以R4 表示之不含烯基之取代或非取代之一價烴基,若為不具有烯基者,則未特別限定,但較佳為碳原子數1~8之取代或非取代之一價烴基。作為一價烴基,可例示甲基、乙基、丙基、丁基等之烷基,環己基、環戊基等之環烷基,苯基、甲苯基、二甲苯基等之芳基,苄基、苯乙基等之芳烷基,氯甲基、氯丙基、氯環己基等之鹵化烴基等。較好為烷基,特佳為甲基及乙基。The substituted or unsubstituted monovalent hydrocarbon group not containing an alkenyl group represented by R4 is not particularly limited if it does not have an alkenyl group, but is preferably a substituted or unsubstituted monovalent hydrocarbon group having 1 to 8 carbon atoms. Examples of the monovalent hydrocarbon group include alkyl groups such as methyl, ethyl, propyl, and butyl, cycloalkyl groups such as cyclohexyl and cyclopentyl, aryl groups such as phenyl, tolyl, and xylyl, aralkyl groups such as benzyl and phenethyl, and halogenated hydrocarbon groups such as chloromethyl, chloropropyl, and chlorocyclohexyl. Alkyl groups are preferred, and methyl and ethyl groups are particularly preferred.
(D)成分於1大氣壓下於150℃加熱30分鐘後的質量減少,相對於加熱前之質量較佳為5質量%以下。若為該範圍,則可更減低金焊墊污染。 (D)成分較佳為液狀,若為分子量500~10,000之範圍則基於作業性及防止金焊墊污染之觀點較佳。 式(3)中,k及m較佳為滿足0<k≦0.9、0<m≦0.9及k+ m=1之數。若為此等範圍之(D)成分,則(A)、(B)及(C)成分之相溶性優異,所得硬化物成為接著性及晶粒剪切強度優異者。 基於組成物之保存安定性及防止金焊墊污染之觀點,n較佳為0~1之數,更佳為0~0.1之數,又更佳為0。The mass of the component (D) after heating at 150°C for 30 minutes under 1 atmosphere is reduced by preferably 5% by mass or less relative to the mass before heating. If it is within this range, the gold pad contamination can be further reduced. The component (D) is preferably in liquid form, and if it is in the range of molecular weight 500~10,000, it is better from the perspective of workability and prevention of gold pad contamination. In formula (3), k and m are preferably numbers that satisfy 0<k≦0.9, 0<m≦0.9 and k+m=1. If the component (D) is within this range, the compatibility of the components (A), (B) and (C) is excellent, and the resulting hardened material has excellent adhesion and grain shear strength. From the viewpoint of storage stability of the composition and prevention of gold pad contamination, n is preferably a number between 0 and 1, more preferably a number between 0 and 0.1, and even more preferably 0.
(D)成分之量,相對於(A)、(B)及(C)成分之合計100質量份為1~25質量份,較佳為3~10質量份。為未達下限之量的情況,有無法獲得目的之晶粒剪切強度之情況。且為超過上限之量的情況,有組成物中發生成分分離,所得硬化物之強度降低之情況。The amount of component (D) is 1 to 25 parts by mass, preferably 3 to 10 parts by mass, relative to 100 parts by mass of the total of components (A), (B) and (C). If the amount is less than the lower limit, the target grain shear strength may not be obtained. If the amount is more than the upper limit, the components may separate in the composition, and the strength of the obtained hardened material may decrease.
<(E)成分> (E)成分之鉑族金屬系觸媒係用以進行及促進前述(A) ~(C)成分之氫矽烷化反應之成分。<Component (E)> The platinum metal catalyst of component (E) is used to carry out and promote the hydrosilylation reaction of the aforementioned components (A) to (C).
鉑族金屬系觸媒未特別限定,可舉例為例如鉑、鈀、銠等鉑族金屬;氯化鉑酸、醇改質之氯化鉑酸、氯化鉑酸與烯烴類、乙烯基矽氧烷或乙炔化合物之配位化合物等之鉑化合物;四(三苯膦)鈀、氯三(三苯膦)銠等之鉑族金屬化合物等,但由於與(A)~(C)成分之相溶性良好,幾乎不含氯雜質,故較佳為氯化鉑酸經聚矽氧改質者。 (E)成分可單獨使用一種亦可併用兩種以上。The platinum group metal catalyst is not particularly limited, and examples thereof include platinum group metals such as platinum, palladium, and rhodium; platinum compounds such as platinum chloride, alcohol-modified platinum chloride, and coordination compounds of platinum chloride with olefins, vinyl siloxanes, or acetylene compounds; platinum group metal compounds such as tetrakis(triphenylphosphine)palladium and tri(triphenylphosphine)rhodium chloride, etc. However, since they have good compatibility with components (A) to (C) and contain almost no chlorine impurities, platinum chloride modified with polysiloxane is preferred. Component (E) may be used alone or in combination of two or more.
(E)成分之調配量,相對於(A)~(D)成分之合計質量,以鉑族金屬元素之質量換算為1~500ppm,較佳為3~100ppm,更佳為5~40ppm。(E)成分之調配量未達下限時,所得黏晶用聚矽氧組成物未充分硬化,另一方面,即使調配多於上述範圍之上限,亦無法再提高所得黏晶用聚矽氧組成物之硬化速度。The amount of component (E) is 1-500 ppm, preferably 3-100 ppm, and more preferably 5-40 ppm, relative to the total mass of components (A) to (D), calculated as the mass of the platinum group metal element. If the amount of component (E) is less than the lower limit, the obtained polysilicone composition for die bonding is not sufficiently cured. On the other hand, even if the amount of component (E) is more than the upper limit of the above range, the curing speed of the obtained polysilicone composition for die bonding cannot be increased.
<(F)成分> 本發明之黏晶用聚矽氧組成物亦可含有發煙氧化矽作為(F)成分。(F)成分係用以使本發明之黏晶用聚矽氧組成物穩定塗佈而賦予適當觸變性之成分。 基於觸變性及作業性之觀點,(F)成分之BET比表面積較佳為100~400m2 /g之範圍。<Component (F)> The polysilicone composition for die bonding of the present invention may also contain fumed silicon oxide as the component (F). The component (F) is used to stably coat the polysilicone composition for die bonding of the present invention and to impart appropriate thixotropy. From the viewpoint of thixotropy and workability, the BET specific surface area of the component (F) is preferably in the range of 100 to 400 m2 /g.
基於觸變性及作業性之觀點,(F)成分之調配量,相對於(A)~(E)成分100質量份,較佳以3~10份之範圍添加。 作為(F)成分之具體例,舉例為REOLOSIL DM-30 (TOKUYAMA (股)製,BET比表面積300m2 /g)等。From the viewpoint of thixotropy and workability, the amount of component (F) is preferably 3 to 10 parts by weight relative to 100 parts by weight of components (A) to (E). Specific examples of component (F) include REOLOSIL DM-30 (manufactured by TOKUYAMA Co., Ltd., BET specific surface area 300 m 2 /g).
<其他成分> 本發明之組成物,除了上述(A)~(F)成分以外,亦可調配以下例示之其他成分。 (反應抑制劑) 本發明之黏晶用聚矽氧組成物中,根據需要可使用對於(D)成分之加成反應觸媒具有硬化抑制效果之習知反應抑制劑(反應控制劑)。作為該反應抑制劑可例示三苯膦等之含磷化合物;三丁基胺或四甲基乙二胺、苯并三唑等之含氮化合物;含硫化合物;乙炔系化合物;過氧化氫化合物;馬來酸衍生物等。<Other components> In addition to the above-mentioned components (A) to (F), the composition of the present invention may also contain other components listed below. (Reaction inhibitor) In the polysilicone composition for die bonding of the present invention, a known reaction inhibitor (reaction control agent) having a hardening inhibitory effect on the addition reaction catalyst of component (D) may be used as needed. Examples of the reaction inhibitor include phosphorus-containing compounds such as triphenylphosphine; nitrogen-containing compounds such as tributylamine, tetramethylethylenediamine, and benzotriazole; sulfur-containing compounds; acetylene compounds; hydrogen peroxide compounds; maleic acid derivatives, etc.
以反應抑制劑進行之硬化抑制效果程度係隨反應抑制劑之化學構造而大為相異,因此反應抑制劑之調配量較佳針對使用之每反應抑制劑調整為最適量。通常較佳相對於(A)成分、(B)成分、(C)成分及(D)成分之合計100質量份為0.001~5質量份。The degree of hardening inhibition effect of the reaction inhibitor varies greatly depending on the chemical structure of the reaction inhibitor, so the amount of the reaction inhibitor is preferably adjusted to the optimal amount for each reaction inhibitor used. Generally, it is preferably 0.001 to 5 parts by weight relative to 100 parts by weight of the total of components (A), (B), (C) and (D).
(填充劑) 本發明之黏晶用聚矽氧組成物中,除了(F)成分之發煙氧化矽以外,亦可填充結晶性氧化矽、中空填料、倍半矽氧烷等之無機質填充劑;及該等填充劑藉由有機烷氧基矽烷化合物、有機氯矽烷化合物、有機矽氮烷化合物、低分子量矽氧烷化合物等之有機矽化合物進行表面疏水化處理之填充劑等;聚矽氧橡膠粉末;聚矽氧樹脂粉末等。作為本成分,基於作業性之方面,特佳使用可賦予觸變性之填充劑。 該等其他成分可單獨使用一種亦可併用兩種以上。(Filler) In addition to the fuming silica of component (F), the polysilicone composition for die bonding of the present invention may also be filled with inorganic fillers such as crystalline silica, hollow fillers, silsesquioxane, etc.; and fillers whose surfaces are hydrophobized by organic silicon compounds such as organic alkoxysilane compounds, organic chlorosilane compounds, organic silazane compounds, low molecular weight siloxane compounds, etc.; polysilicone rubber powder; polysilicone resin powder, etc. As this component, based on the workability, it is particularly preferred to use a filler that can impart thixotropic properties. These other components may be used alone or in combination of two or more.
又,較佳本發明之黏晶用聚矽氧組成物中之全部R1 中之80莫耳%以上為甲基。又,為使黏晶(轉印法)之作業性良好,本發明之黏晶用聚矽氧組成物之黏度於25℃下較佳為5~100Pa・s,更佳為20~50 Pa・s。In addition, it is preferred that 80 mol% or more of all R 1 in the die bonding polysilicone composition of the present invention is a methyl group. In addition, in order to improve the workability of the die bonding (transfer method), the viscosity of the die bonding polysilicone composition of the present invention is preferably 5-100 Pa·s at 25°C, and more preferably 20-50 Pa·s.
[硬化物] 再者,本發明提供黏晶用聚矽氧組成物之硬化物(聚矽氧硬化物)。 本發明之黏晶用聚矽氧組成物之硬化,以習知條件進行即可,作為一例可於100~180℃以10分鐘~5小時之條件硬化。[Hardened product] Furthermore, the present invention provides a cured product of a polysilicone composition for die bonding (cured polysilicone). The curing of the polysilicone composition for die bonding of the present invention can be carried out under known conditions. For example, the curing can be carried out at 100-180°C for 10 minutes to 5 hours.
本發明之黏晶用聚矽氧組成物之硬化物對於基板・LED晶片等之接著力高,尤其作為LED元件等之黏晶所用之黏晶材而有用。如以上,依據本發明之聚矽氧硬化物,可成為對於基板・LED晶片等之接著力高的接著劑。The cured polysilicone composition for die bonding of the present invention has high adhesion to substrates, LED chips, etc., and is particularly useful as a die bonding material for die bonding of LED components, etc. As described above, the cured polysilicone composition of the present invention can be an adhesive with high adhesion to substrates, LED chips, etc.
[光半導體裝置] 進而,本發明提供以前述硬化物將光半導體元件黏晶之光半導體裝置。 作為使用本發明之黏晶用聚矽氧組成物將光半導體元件進行黏晶之方法之一例,舉例為將本發明之黏晶用聚矽氧組成物填充於針筒中,使用佈膠器於封裝等之基體上,以乾燥狀態成為1~100μm之厚度之方式塗佈後,於經塗佈之組成物上配置光半導體元件(例如發光二極體),使該組成物硬化,藉此將光半導體元件黏晶於基體上之方法。又亦可為將組成物載置於橡膠輥盤中,以邊擠壓邊衝壓之方法,於基體上以乾燥狀態成為1~100μm之厚度之方式塗佈後,於經塗佈之組成物上配置光半導體元件,使該組成物硬化,藉此將光半導體元件黏晶於基體上之方法。該組成物之硬化條件如前述即可。如此可成為信賴性高、以本發明之聚矽氧硬化物將光半導體元件黏晶之光半導體裝置。 [實施例][Optical semiconductor device] Furthermore, the present invention provides an optical semiconductor device in which an optical semiconductor element is bonded with the aforementioned hardened material. As an example of a method for bonding an optical semiconductor element using the polysilicone composition for die bonding of the present invention, the polysilicone composition for die bonding of the present invention is filled in a syringe, applied to a substrate such as a package using a glue dispenser in a manner such that the composition is dried to a thickness of 1 to 100 μm, and then an optical semiconductor element (e.g., a light-emitting diode) is arranged on the applied composition, and the composition is hardened to bond the optical semiconductor element to the substrate. Alternatively, the composition may be placed on a rubber roller, applied to a substrate in a dry state to a thickness of 1 to 100 μm by squeezing and punching, and then an optical semiconductor element is arranged on the applied composition to cure the composition, thereby bonding the optical semiconductor element to the substrate. The curing conditions of the composition are as described above. In this way, a highly reliable optical semiconductor device can be formed in which the optical semiconductor element is bonded to the substrate using the polysilicone cured material of the present invention. [Example]
以下使用實施例及比較例具體說明本發明,但本發明並非限定於該等者。又,分子量係凝膠滲透層析(GPC)之標準聚苯乙烯換算之重量平均分子量。25℃下之黏度係利用旋轉黏度計之測定值。揮發分係於1大氣壓下於150℃加熱30分鐘時的質量減少(質量%)。 又,各矽氧烷單位之簡稱意義如下。 M:(CH3 )3 SiO1/2 MVi :(CH2 =CH)(CH3 )2 SiO1/2 MVi3 :(CH2 =CH)3 SiO1/2 D:(CH3 )2 SiO2/2 DH :H(CH3 )SiO2/2 T:(CH3 )SiO3/2 The present invention is specifically described below using Examples and Comparative Examples, but the present invention is not limited thereto. In addition, the molecular weight is the weight average molecular weight converted to standard polystyrene by gel permeation chromatography (GPC). The viscosity at 25°C is a value measured using a rotational viscometer. The volatile matter is the mass loss (mass %) when heated at 150°C for 30 minutes under 1 atmosphere. In addition, the abbreviations of each siloxane unit have the following meanings. M: (CH 3 ) 3 SiO 1/2 M Vi : (CH 2 =CH)(CH 3 ) 2 SiO 1/2 M Vi3 : (CH 2 =CH) 3 SiO 1/2 D: (CH 3 ) 2 SiO 2/2 D H : H(CH 3 )SiO 2/2 T: (CH 3 )SiO 3/2
T1 : T1 :
T2 : T2 :
T3 : T3 :
T4 : T4 :
T5 : Q:SiO4/2 T5 : Q: SiO 4/2
[合成例1] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之3,000mL之4頸燒瓶中饋入以[(CH3 O)3 SiO1/2 ]2 [(CH3 O)2 SiO]2 表示之有機聚矽氧烷352.5g、六乙烯基二矽氧烷45.6g、六甲基二矽氧烷182.3g、異丙醇58g,邊攪拌邊滴下甲烷磺酸6.7g。隨後,滴下水90g,於65℃混合2小時,進行反應。於其中添加二甲苯700g、50%氫氧化鉀水溶液10.9g,邊升溫餾除低沸點成分邊於120℃進行5小時反應。添加作為添加劑之甲烷磺酸3.5g,於120℃進行2小時中和處理。冷卻後,進行過濾,獲得組成比為MVi3 0.07 M0.4 Q0.53 表示之三維網狀有機聚矽氧烷(B-1:分子量3,350,於23℃下為固體,相對於固形分之乙烯基量0.287 mol/100g)。[Synthesis Example 1] Into a 3,000 mL 4-necked flask equipped with a stirrer, a cooling tube, a dropping funnel, and a thermometer, 352.5 g of an organopolysiloxane represented by [(CH 3 O) 3 SiO 1/2 ] 2 [(CH 3 O) 2 SiO] 2 , 45.6 g of hexavinyldisiloxane, 182.3 g of hexamethyldisiloxane, and 58 g of isopropyl alcohol were added, and 6.7 g of methanesulfonic acid was dropped while stirring. Subsequently, 90 g of water was dropped, and the mixture was mixed at 65°C for 2 hours to react. 700 g of xylene and 10.9 g of a 50% potassium hydroxide aqueous solution were added thereto, and the mixture was reacted at 120°C for 5 hours while the temperature was raised to distill off low-boiling components. 3.5 g of methanesulfonic acid was added as an additive, and neutralization treatment was performed at 120°C for 2 hours. After cooling, filtration was performed to obtain a three-dimensional network organopolysiloxane having a composition ratio of M Vi3 0.07 M 0.4 Q 0.53 (B-1: molecular weight 3,350, solid at 23°C, vinyl content relative to solid content 0.287 mol/100g).
[合成例2] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入3-縮水甘油氧基丙基三甲氧基矽烷234g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T1 0.49 T0.51 之含環氧基之矽氧烷(D-1:分子量2,780,黏度313mPa・s)。揮發分為1.7質量%。[Synthesis Example 2] 234 g of 3-glycidyloxypropyltrimethoxysilane, 136 g of methyltrimethoxysilane, and 37.8 g of methanol were added to a 1,000 mL 4-neck flask equipped with a stirring device, a cooling tube, a dropping funnel, and a thermometer. A mixed solution of 29 g of 0.04 N hydrochloric acid and 70.3 g of methanol was added dropwise while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was added dropwise to neutralize the mixture, and stirring was continued at 65°C for 2 hours. After cooling and filtering, 500 g of methanol/water (mass ratio 50:50) mixture was added, mixed for 20 minutes, left to stand for 30 minutes, and the washing operation of separating and removing the methanol solvent layer was repeated 3 times to remove low molecular weight, and then reduced pressure concentration was performed at 100°C for 1 hour to remove residual methanol. After cooling to 25°C, filtration was performed to obtain epoxy-containing siloxane (D-1: molecular weight 2,780, viscosity 313mPa・s) with a composition unit ratio of T 1 0.49 T 0.51 . The volatile matter was 1.7% by mass.
[合成例3] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入8-縮水甘油氧基辛基三甲氧基矽烷304g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻至25℃後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T2 0.47 T0.53 之含環氧基之矽氧烷(D-2:分子量2,570,黏度138mPa・s)。揮發分為1.5質量%。[Synthesis Example 3] 304 g of 8-glycidyloxyoctyltrimethoxysilane, 136 g of methyltrimethoxysilane, and 37.8 g of methanol were added to a 1,000 mL 4-neck flask equipped with a stirring device, a cooling tube, a dropping funnel, and a thermometer. A mixed solution of 29 g of 0.04 N hydrochloric acid and 70.3 g of methanol was added dropwise while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was added dropwise to neutralize the mixture, and stirring was continued at 65°C for 2 hours. After cooling to 25°C, filtering, adding 500g of methanol/water (mass ratio 50:50), mixing for 20 minutes, standing for 30 minutes, separating and removing the methanol solvent layer, washing operation was repeated 3 times to remove low molecular weight, and then reduced pressure concentration was performed at 100°C for 1 hour to remove residual methanol. After cooling to 25°C, filtering was performed to obtain epoxy-containing siloxane (D-2: molecular weight 2,570, viscosity 138mPa・s) with a unit ratio of T 2 0.47 T 0.53 . The volatile matter was 1.5 mass%.
[合成例4] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入2-(3,4-環氧基環己基)三甲氧基矽烷246g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻至25℃後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T3 0.57 T0.43 之含環氧基之矽氧烷(D-3:分子量1890,黏度137mPa・s)。揮發分(150℃30分鐘)為4.7質量%。[Synthesis Example 4] 246 g of 2-(3,4-epoxycyclohexyl)trimethoxysilane, 136 g of methyltrimethoxysilane, and 37.8 g of methanol were added to a 1,000 mL 4-neck flask equipped with a stirring device, a cooling tube, a dropping funnel, and a thermometer. A mixed solution of 29 g of 0.04 N hydrochloric acid and 70.3 g of methanol was added dropwise while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was added dropwise to neutralize the mixture, and stirring was performed at 65°C for 2 hours. After cooling to 25°C, filtering, adding 500g of methanol/water (mass ratio 50:50) mixed solution, mixing for 20 minutes, standing for 30 minutes, separating and removing the methanol solvent layer, washing operation was repeated 3 times to remove low molecular weight, and then reduced pressure concentration was performed at 100°C for 1 hour to remove residual methanol. After cooling to 25°C, filtering was performed to obtain epoxy-containing siloxane (D-3: molecular weight 1890, viscosity 137mPa・s) with a unit ratio of T 3 0.57 T 0.43 . The volatile matter (150°C 30 minutes) was 4.7 mass%.
[比較合成例1] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入3-甲基丙烯醯氧基丙基三甲氧基矽烷248g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻至25℃後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T4 0.52 T0.48 之有機聚矽氧烷(D-4:分子量2,900,黏度261mPa・s)。揮發分為2.7質量%。[Comparative Synthesis Example 1] 248 g of 3-methacryloyloxypropyltrimethoxysilane, 136 g of methyltrimethoxysilane, and 37.8 g of methanol were added to a 1,000 mL 4-neck flask equipped with a stirring device, a cooling tube, a dropping funnel, and a thermometer. A mixed solution of 29 g of 0.04 N hydrochloric acid and 70.3 g of methanol was added dropwise while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was added dropwise to neutralize the mixture, and stirring was continued at 65°C for 2 hours. After cooling to 25°C, filtering, adding 500g of methanol/water (mass ratio 50:50), mixing for 20 minutes, standing for 30 minutes, separating and removing the methanol solvent layer, washing operation was repeated 3 times to remove low molecular weight, and then reduced pressure concentration was performed at 100°C for 1 hour to remove residual methanol. After cooling to 25°C, filtering was performed to obtain an organopolysiloxane (D-4: molecular weight 2,900, viscosity 261mPa・s) with a composition unit ratio of T 4 0.52 T 0.48 . The volatile matter was 2.7% by mass.
[比較合成例2] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入3-丙烯醯氧基丙基三甲氧基矽烷248g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻至25℃後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T5 0.49 T0.51 之有機聚矽氧烷(D-5:分子量3,350,黏度387mPa・s)。揮發分為0.9質量%。[Comparative Synthesis Example 2] 248 g of 3-acryloyloxypropyltrimethoxysilane, 136 g of methyltrimethoxysilane, and 37.8 g of methanol were added to a 1,000 mL 4-neck flask equipped with a stirring device, a cooling tube, a dropping funnel, and a thermometer. A mixed solution of 29 g of 0.04 N hydrochloric acid and 70.3 g of methanol was added dropwise while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was added dropwise to neutralize the mixture, and stirring was continued at 65°C for 2 hours. After cooling to 25°C, filtering, adding 500g of methanol/water (mass ratio 50:50), mixing for 20 minutes, standing for 30 minutes, separating and removing the methanol solvent layer, washing operation was repeated 3 times to remove low molecular weight, and then reduced pressure concentration was performed at 100°C for 1 hour to remove residual methanol. After cooling to 25°C, filtering was performed to obtain an organopolysiloxane (D-5: molecular weight 3,350, viscosity 387mPa・s) with a composition unit ratio of T 5 0.49 T 0.51 . The volatile matter was 0.9 mass%.
[合成例5] 將六氯化鉑酸與1,3-二乙烯基四甲基二矽氧烷之反應產物,以鉑含量成為0.004質量%之方式,以MVi 2 D40 表示之直鏈狀二甲基聚矽氧烷(黏度60 mPa・s)稀釋,調製鉑觸媒。[Synthesis Example 5] The reaction product of platinum hexachloride and 1,3-divinyltetramethyldisiloxane was diluted with linear dimethylpolysiloxane (viscosity 60 mPa・s) represented by M Vi 2 D 40 so that the platinum content became 0.004 mass % to prepare a platinum catalyst.
[實施例1~4、比較例1~7] 以表1所示之調配量混合下述各成分,調製黏晶用聚矽氧樹脂組成物。 又,表1中之各成分的數值表示質量份。[Si-H]/[Si-Vi]值表示(C)成分中之鍵結於矽原子之氫原子(Si-H)相對於(A)成分及(B)成分中之鍵結於矽原子之全部烯基之合計數的比(莫耳比)。[Examples 1 to 4, Comparative Examples 1 to 7] The following components were mixed in the proportions shown in Table 1 to prepare a polysilicone resin composition for die bonding. In addition, the numerical values of the components in Table 1 represent mass fractions. The [Si-H]/[Si-Vi] value represents the ratio (molar ratio) of the hydrogen atoms (Si-H) bonded to the silicon atoms in the (C) component to the total number of all olefin groups bonded to the silicon atoms in the (A) component and the (B) component.
(A)成分: (A-1)以構成單位比MVi 0.47 T0.53 表示之有機聚矽氧烷(於25℃之黏度17mPa・s) (A-2)以平均構造為MVi 2 D15 表示之直鏈狀二甲基聚矽氧烷(於25℃之黏度8.8mPa・s) (A-3)以平均構造為MVi 2 D204 表示之二甲基聚矽氧烷(於25℃之黏度600mPa・s)(A) Ingredients: (A-1) Organic polysiloxane represented by a structural unit ratio of M Vi 0.47 T 0.53 (viscosity 17mPa・s at 25℃) (A-2) Straight chain dimethyl polysiloxane represented by an average structure of M Vi 2 D 15 (viscosity 8.8mPa・s at 25℃) (A-3) Dimethyl polysiloxane represented by an average structure of M Vi 2 D 204 (viscosity 600mPa・s at 25℃)
(B)成分: (B-1)合成例1所得之三維網狀有機聚矽氧烷 (B-2)以平均構造為MVi 1.2 M7.4 Q10 表示之於23℃為固體之乙烯基量為0.085mol/100g之三維網狀有機聚矽氧烷(B) Components: (B-1) The three-dimensional network organopolysiloxane obtained in Synthesis Example 1 (B-2) A three-dimensional network organopolysiloxane having an average structure of M Vi 1.2 M 7.4 Q 10 and a vinyl content of 0.085 mol/100 g in a solid state at 23°C.
(C)成分:以平均構造為M2 D14.5 DH 38 表示之有機氫聚矽氧烷(揮發分量為0.2質量%)(C) Component: Organohydropolysiloxane with an average structure of M 2 D 14.5 DH 38 (volatile content: 0.2 mass%)
(D)成分: (D-1)合成例2所得之有機聚矽氧烷(揮發分量為1.7質量%) (D-2)合成例3所得之有機聚矽氧烷(揮發分量為1.5質量%) (D-3)合成例4所得之有機聚矽氧烷(揮發分量為4.7質量%) (D-4)比較合成例1所得之有機聚矽氧烷(揮發分量為2.7質量%) (D-5)比較合成例2所得之有機聚矽氧烷(揮發分量為0.9質量%) (D-6)3-縮水甘油氧基丙基三甲氧基矽烷(揮發分量為97質量%)(D) Ingredients: (D-1) Organic polysiloxane obtained in Synthesis Example 2 (volatile content: 1.7 mass%) (D-2) Organic polysiloxane obtained in Synthesis Example 3 (volatile content: 1.5 mass%) (D-3) Organic polysiloxane obtained in Synthesis Example 4 (volatile content: 4.7 mass%) (D-4) Organic polysiloxane obtained in Comparative Synthesis Example 1 (volatile content: 2.7 mass%) (D-5) Organic polysiloxane obtained in Comparative Synthesis Example 2 (volatile content: 0.9 mass%) (D-6) 3-Glyceryloxypropyl trimethoxysilane (volatile content: 97 mass%)
(D)成分之揮發分係將各(D)成分以1.5g逐次塗佈於Φ60mm鋁盤上,以150℃烘箱於開放系中加熱30分鐘,算出加熱後減少的質量比例者。The volatile matter of component (D) was determined by applying 1.5 g of each component (D) on a Φ60 mm aluminum plate, heating it in an open oven at 150°C for 30 minutes, and calculating the mass ratio of the reduction after heating.
(E)成分:合成例5所得之鉑觸媒 (F)成分:發煙氧化矽[REOLOSIL DM30(TOKUYAMA製,BET比表面積300m2 /g)] (G)反應抑制劑:1-乙炔基環己醇(E) Component: Platinum catalyst obtained in Synthesis Example 5 (F) Component: Fumed silica [REOLOSIL DM30 (manufactured by TOKUYAMA, BET specific surface area 300 m 2 /g)] (G) Reaction inhibitor: 1-ethynylcyclohexanol
針對實施例1~4、比較例1~7所得之黏晶用聚矽氧組成物進行下述評價,結果示於表1。 [硬度] 將前述組成物以成為2mm厚之方式流入模具中,於150℃×4小時之條件硬化。硬化物之D型硬度依據 JIS K 6253-3:2012予以測定。The following evaluation was performed on the polysilicone composition for die bonding obtained in Examples 1 to 4 and Comparative Examples 1 to 7, and the results are shown in Table 1. [Hardness] The above composition was poured into a mold in a manner of 2 mm thick and hardened at 150°C for 4 hours. The D-type hardness of the hardened material was measured in accordance with JIS K 6253-3:2012.
[晶粒剪切強度] 前述組成物使用黏晶機(ASM公司製,AD-830),對於SMD5730封裝(I-CHIUN PRECSION INDUSTRY CO.製,樹脂部:聚苯二甲醯胺)之鍍銀電極部,藉由衝壓進行定量轉印。衝壓時產生拉絲,樹脂無法轉印之情況記為×,無問題而可轉印之情況記為○。進而,於其上搭載光半導體元件(SemiLEDs公司製,EV-B35A,35mil)。所製作之封裝以150℃烘箱加熱4小時,使組成物硬化後,使用黏合測試機(Dage公司製,4000系列)進行晶粒剪切強度之測定。[Digit shear strength] The above composition was quantitatively transferred to the silver-plated electrode part of the SMD5730 package (manufactured by I-CHIUN PRECSION INDUSTRY CO., resin part: polyphenylene diamine) using a die bonder (AD-830, manufactured by ASM) by stamping. The case where the resin could not be transferred due to wire drawing during stamping was marked as ×, and the case where the transfer was possible without any problem was marked as ○. Furthermore, an optical semiconductor element (EV-B35A, 35mil, manufactured by SemiLEDs) was mounted on it. The package was heated in an oven at 150°C for 4 hours to harden the composition, and then the die shear strength was measured using an adhesion tester (Dage, 4000 series).
[金焊墊污染] 於於Φ105mm鋁盤上設置搭載有光半導體元件(SemiLEDs公司製,EV-B35A,35mil)之PKG,於PKG周圍塗佈2g樹脂。隨後,以150℃×4小時之條件硬化後,以顯微鏡觀察半導體元件之金焊墊,金焊墊上附著有矽氧烷成分之情況記為×,未附著之情況記為○。[Gold pad contamination] A PKG with an optical semiconductor component (EV-B35A, 35mil, manufactured by SemiLEDs) was placed on a Φ105mm aluminum plate, and 2g of resin was applied around the PKG. After curing at 150℃ for 4 hours, the gold pad of the semiconductor component was observed under a microscope. The gold pad with silicone components attached was marked as ×, and the gold pad without silicone components attached was marked as ○.
如表1所示,實施例1~4於衝壓時均無缺陷,為硬化物之硬度・晶粒剪切強度優異且無金焊墊污染之結果,可知為作為黏晶材優異者。又,實施例1之金焊墊污染試驗之結果示於圖1。As shown in Table 1, Examples 1 to 4 had no defects during punching, and the hardness and grain shear strength of the hardened material were excellent, and there was no gold pad contamination, which showed that they were excellent as bonding materials. In addition, the results of the gold pad contamination test of Example 1 are shown in Figure 1.
另一方面,比較例1不含(D)成分,晶粒強度變不充分。比較例2由於(D)成分中不含環氧基,故成為晶粒剪切強度較差之結果。 比較例4係(A)成分之黏度高,為無法衝壓且作業性差之黏晶材,比較例5係(D)成分較少且晶粒剪切強度較低者。比較例6係(D)成分過多,故硬化物之硬化為充分但組成物發生分離,作為黏晶材時無保存性而成為信賴性差的結果。比較例7中雖藉由包含環氧基之矽烷偶合劑而見到晶粒剪切強度稍微提高,但如圖2所示發生金焊墊污染而成為信賴性差的結果。On the other hand, Comparative Example 1 does not contain component (D), and the grain strength becomes insufficient. Comparative Example 2 does not contain an epoxy group in component (D), so the grain shear strength is poor. Comparative Example 4 is a die bonding material that cannot be pressed and has poor workability because the viscosity of component (A) is high. Comparative Example 5 is a die bonding material with less component (D) and lower grain shear strength. Comparative Example 6 is a die bonding material with too much component (D), so the hardening of the hardened material is sufficient, but the composition is separated, and the reliability is poor because the hardening is not preserved as a die bonding material. In Comparative Example 7, although the grain shear strength is slightly improved by the silane coupling agent containing an epoxy group, gold pad contamination occurs as shown in Figure 2, resulting in poor reliability.
如以上,本發明之黏晶用聚矽氧組成物可賦予硬度及晶粒剪切強度優異之聚矽氧硬化物,且可有效抑制硬化時之金焊墊污染者,作為光半導體元件等之黏晶中使用之黏晶材特別有用。尤其,因該優點,於黏晶步驟後進行之線黏合步驟中,亦難以發生晶片剝離或無法黏合之缺點,故以該聚矽氧硬化物將光半導體元件黏晶之光半導體裝置,信賴性提高,裝置之生產性亦提高。因此,本發明之黏晶用聚矽氧組成物及其硬化物於光半導體裝置之技術領域中利用價值高。As described above, the polysilicone composition for die bonding of the present invention can provide a polysilicone cured product with excellent hardness and grain shear strength, and can effectively suppress the contamination of the gold pad during curing, and is particularly useful as a die bonding material used in die bonding of optical semiconductor components, etc. In particular, due to this advantage, it is difficult to cause the chip to peel off or the defect of being unable to bond in the wire bonding step after the die bonding step, so the reliability of the optical semiconductor device in which the optical semiconductor component is bonded with the polysilicone cured product is improved, and the productivity of the device is also improved. Therefore, the polysilicone composition for die bonding of the present invention and its cured product have high utilization value in the technical field of optical semiconductor devices.
又,本發明並未限定於上述實施形態。上述實施形態為例示,凡具有與本發明之申請專利範圍中記載之技術思想實質上相同構成,發揮同樣作用效果者,任一者均包含於本發明之技術範圍內。Furthermore, the present invention is not limited to the above-mentioned embodiments. The above-mentioned embodiments are illustrative only, and any embodiments having substantially the same structure and exerting the same effects as the technical concept described in the patent application scope of the present invention are included in the technical scope of the present invention.
[圖1]係實施例1之金焊墊污染試驗後之外觀照片。 [圖2]係比較例7之金焊墊污染試驗後之外觀照片。[Figure 1] is a photograph of the appearance of Example 1 after the gold pad contamination test. [Figure 2] is a photograph of the appearance of Comparative Example 7 after the gold pad contamination test.
Claims (10)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-095074 | 2019-05-21 | ||
| JP2019095074A JP7041094B6 (en) | 2019-05-21 | 2019-05-21 | Silicone composition for die bonding, cured product thereof, and optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202111072A TW202111072A (en) | 2021-03-16 |
| TWI883002B true TWI883002B (en) | 2025-05-11 |
Family
ID=73441812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109116655A TWI883002B (en) | 2019-05-21 | 2020-05-20 | Polysilicone composition for die bonding, cured product thereof and optical semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7041094B6 (en) |
| KR (1) | KR102769563B1 (en) |
| CN (1) | CN111978736A (en) |
| TW (1) | TWI883002B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116601252A (en) * | 2020-12-25 | 2023-08-15 | 陶氏东丽株式会社 | Integrated dicing die bonding sheet and method for manufacturing semiconductor device |
| JP7643372B2 (en) * | 2022-02-17 | 2025-03-11 | 信越化学工業株式会社 | Room temperature curing silicone rubber composition |
| CN117089318B (en) * | 2023-07-25 | 2024-05-10 | 北京康美特科技股份有限公司 | A kind of organic silicon solid crystal adhesive and its preparation method and application |
| CN117165236B (en) * | 2023-10-30 | 2024-04-12 | 空净视界智能科技有限公司 | Insulating die bond adhesive for LED and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105778100A (en) * | 2014-12-25 | 2016-07-20 | 比亚迪股份有限公司 | Organosilicon tackifier and preparation method thereof and addition type silicone rubber composition |
| CN108624060A (en) * | 2017-03-15 | 2018-10-09 | 信越化学工业株式会社 | Die bond silicone resin component and solidfied material |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0620242B1 (en) * | 1993-04-15 | 1998-08-19 | Dow Corning Toray Silicone Company, Limited | Epoxy group-containing silicone resin and compositions based thereon |
| JP2004346144A (en) | 2003-05-21 | 2004-12-09 | Nippon Kayaku Co Ltd | Silicon compound having epoxy group and thermosetting resin composition |
| JP4648099B2 (en) | 2005-06-07 | 2011-03-09 | 信越化学工業株式会社 | Silicone resin composition for die bonding |
| JP2007258317A (en) * | 2006-03-22 | 2007-10-04 | Shin Etsu Chem Co Ltd | Manufacturing method of semiconductor device |
| WO2008010545A1 (en) | 2006-07-21 | 2008-01-24 | Kaneka Corporation | Polysiloxane composition, molded body obtained from the same, and optodevice member |
| JP2008179811A (en) | 2006-12-28 | 2008-08-07 | Asahi Kasei Corp | Siloxane derivatives and cured products thereof |
| JP2008202008A (en) | 2007-02-22 | 2008-09-04 | Nagase Chemtex Corp | Sealing resin composition for optical element |
| JP2010285571A (en) | 2009-06-15 | 2010-12-24 | Shin-Etsu Chemical Co Ltd | Silicone resin composition for die bonding |
| KR101169032B1 (en) * | 2010-01-19 | 2012-07-26 | (주)에버텍엔터프라이즈 | Silicone composition for die bonding of the face-down type semiconductor packages |
| JP5505991B2 (en) * | 2010-04-30 | 2014-05-28 | 信越化学工業株式会社 | High adhesion silicone resin composition and optical semiconductor device using the composition |
| EP3020750B1 (en) | 2013-07-08 | 2025-09-03 | Momentive Performance Materials Japan LLC | Adhesiveness-imparting agent, adhesive polyorganosiloxane composition, and optical semiconductor device |
| JP6258048B2 (en) * | 2014-01-28 | 2018-01-10 | 信越化学工業株式会社 | Organically modified silicone resin composition |
| JP6277974B2 (en) | 2015-02-26 | 2018-02-14 | 信越化学工業株式会社 | Addition-curable silicone resin composition and die attach material for optical semiconductor devices |
| JP6702224B2 (en) | 2017-02-17 | 2020-05-27 | 信越化学工業株式会社 | Addition curable silicone resin composition and die attach material for optical semiconductor device |
| CN107118350A (en) * | 2017-04-21 | 2017-09-01 | 华南理工大学 | A kind of epoxy and phenyl silicones and preparation method and application |
| JP6751368B2 (en) * | 2017-04-27 | 2020-09-02 | 信越化学工業株式会社 | Addition-curable silicone composition, method for producing the composition, and optical semiconductor device |
| TWI762649B (en) | 2017-06-26 | 2022-05-01 | 日商杜邦東麗特殊材料股份有限公司 | Curable silicon composition for die bonding |
| CN109762167A (en) * | 2018-12-14 | 2019-05-17 | 中国科学院深圳先进技术研究院 | A kind of thermal conductive insulating solid crystal material for LED small size chip and preparation method thereof |
-
2019
- 2019-05-21 JP JP2019095074A patent/JP7041094B6/en active Active
-
2020
- 2020-05-18 KR KR1020200058897A patent/KR102769563B1/en active Active
- 2020-05-20 TW TW109116655A patent/TWI883002B/en active
- 2020-05-20 CN CN202010430027.XA patent/CN111978736A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105778100A (en) * | 2014-12-25 | 2016-07-20 | 比亚迪股份有限公司 | Organosilicon tackifier and preparation method thereof and addition type silicone rubber composition |
| CN108624060A (en) * | 2017-03-15 | 2018-10-09 | 信越化学工业株式会社 | Die bond silicone resin component and solidfied material |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200134162A (en) | 2020-12-01 |
| TW202111072A (en) | 2021-03-16 |
| CN111978736A (en) | 2020-11-24 |
| KR102769563B1 (en) | 2025-02-19 |
| JP7041094B2 (en) | 2022-03-23 |
| JP7041094B6 (en) | 2023-12-18 |
| JP2020189908A (en) | 2020-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4636242B2 (en) | Optical semiconductor element sealing material and optical semiconductor element | |
| CN104662100B (en) | Optical semiconductor sealing silicon composition and optical semiconductor device | |
| TWI883002B (en) | Polysilicone composition for die bonding, cured product thereof and optical semiconductor device | |
| TWI734899B (en) | Silicone resin composition and hardened material for die bonding | |
| KR20070095799A (en) | Manufacturing Method of Semiconductor Device | |
| TWI831858B (en) | Addition curable polysilicone resin composition, its cured product, and optical semiconductor device | |
| KR102839667B1 (en) | Addition-curable silicone composition and optical element | |
| TW202104377A (en) | Silicone resin composition for die-bonding, cured product and light-emitting diode element | |
| TWI798500B (en) | Addition-curing polysiloxane resin composition, cured product thereof, and optical semiconductor device | |
| TWI830872B (en) | Silicone resin compositions, hardened materials and optical semiconductor devices for chip bonding | |
| TWI834881B (en) | Addition-hardening polysilicone resin composition, method of manufacturing the composition, and optical semiconductor device | |
| JP7270574B2 (en) | Addition-curable silicone composition, cured silicone product, and optical element | |
| TWI861388B (en) | Polysilicone composition for die bonding, cured product thereof, and optical semiconductor device | |
| TW202043419A (en) | Organic modified silicone resin composition for die-bonding, cured product thereof, and optical semiconductor element |