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TWI872998B - Gas supply device - Google Patents

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Publication number
TWI872998B
TWI872998B TW113111116A TW113111116A TWI872998B TW I872998 B TWI872998 B TW I872998B TW 113111116 A TW113111116 A TW 113111116A TW 113111116 A TW113111116 A TW 113111116A TW I872998 B TWI872998 B TW I872998B
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gas
control unit
air intake
channel
air
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TW113111116A
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Chinese (zh)
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TW202503103A (en
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郭一男
唐祺夏
劉冠宏
張銘峰
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沃亞科技股份有限公司
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Abstract

A gas supply device is provided, configured to be connected between a semiconductor manufacturing equipment and an off-gas treatment system, including: a first intake unit, a second intake unit, a mixing chamber, a gas supply channel and a control unit. The first intake unit is configured for a first gas to be introduced and includes a first inlet channel and a first flow controller disposed on the first inlet channel. The second unit is configured for a second gas to be introduced and includes a second inlet channel and a second flow controller disposed on the second inlet channel. The mixing chamber is communicated respectively with the first inlet channel and the second inlet channel. The gas supply channel is communicated with the mixing chamber and configured to be communicated with an exhaust channel of the semiconductor manufacturing equipment. The control unit is respectively connected with and controls the first flow controller and the second flow controller. The first gas is nitrogen, the second gas is air, and the control unit changes intake amounts of the first gas and the second gas according to a target oxygen content of a mixed gas.

Description

氣體供應裝置Gas supply device

本發明係有關於一種可連接於一半導體製程設備之氣體供應裝置。The present invention relates to a gas supply device which can be connected to a semiconductor process equipment.

一般半導體製程設備(例如磊晶)中常需要使用特殊反應氣體以與晶圓之表面發生反應,反應後之廢氣中可能含有對環境或人體有害或易燃之物質,因而需要經廢氣處理系統處理後方可排出至大氣。In general semiconductor process equipment (such as epitaxy), special reactive gases are often required to react with the surface of the wafer. The waste gas after the reaction may contain substances that are harmful to the environment or human body or flammable. Therefore, it needs to be treated by the waste gas treatment system before it can be discharged into the atmosphere.

該半導體製程設備與該廢氣處理系統由一排氣管相互連通,於長期使用下,廢氣中之物質常會黏附於該排氣管之管壁,因而需定期更換該排氣管。然而,於拆卸該排氣管時,管內殘留之廢氣可能導致空氣汙染或有燃燒、爆炸之危險性,存在安全疑慮。The semiconductor process equipment and the exhaust gas treatment system are interconnected by an exhaust pipe. After long-term use, the substances in the exhaust gas often adhere to the wall of the exhaust pipe, so the exhaust pipe needs to be replaced regularly. However, when the exhaust pipe is disassembled, the residual exhaust gas in the pipe may cause air pollution or the risk of combustion or explosion, which poses a safety concern.

因此,有必要提供一種新穎且具有進步性之氣體供應裝置,以解決上述之問題。Therefore, it is necessary to provide a novel and advanced gas supply device to solve the above-mentioned problems.

本發明之主要目的在於提供一種氣體供應裝置,有助於排除有害氣體,確保維修或保養半導體製程設備時之操作安全。The main purpose of the present invention is to provide a gas supply device that helps to remove harmful gases and ensures the safety of operation when repairing or maintaining semiconductor process equipment.

為達成上述目的,本發明提供一種氣體供應裝置,供連接於一半導體製程設備與一廢氣處理系統之間,包括:一第一進氣單元、一第二進氣單元、一混合腔室、一供氣通道及一控制單元。該第一進氣單元供引入一第一氣體且包括一第一進氣通道及一設於該第一進氣通道之第一流量控制器;該第二進氣單元供引入一第二氣體且包括一第二進氣通道及一設於該第二進氣通道之第二流量控制器;該混合腔室分別連通該第一進氣通道及該第二進氣通道以供該第一氣體及該第二氣體混合形成一混合氣體;該供氣通道連通該混合腔室且供連通該半導體製程設備之一排氣管路,該排氣管路供排出一廢氣至該廢氣處理系統;該控制單元連接該第一流量控制器及該第二流量控制器而可分別控制該第一氣體及該第二氣體輸入該混合腔室之進氣量。其中該第一氣體為氮氣,該第二氣體為空氣,該控制單元依據該混合氣體之一目標含氧量改變該第一氣體與該第二氣體之進氣量。To achieve the above object, the present invention provides a gas supply device for connecting between semiconductor process equipment and an exhaust gas treatment system, including: a first air intake unit, a second air intake unit, a mixing chamber, a gas supply channel and a control unit. The first air intake unit is used to introduce a first gas and includes a first air intake channel and a first flow controller disposed in the first air intake channel; the second air intake unit is used to introduce a second gas and includes a second air intake channel and a second flow controller disposed in the second air intake channel; the mixing chamber is respectively connected to the first air intake channel and the second air intake channel for the first gas and the second gas to mix to form a mixed gas; the air supply channel is connected to the mixing chamber and is connected to an exhaust pipeline of the semiconductor process equipment, and the exhaust pipeline is used to exhaust a waste gas to the waste gas treatment system; the control unit is connected to the first flow controller and the second flow controller and can respectively control the intake amount of the first gas and the second gas input into the mixing chamber. The first gas is nitrogen, and the second gas is air. The control unit changes the intake amount of the first gas and the second gas according to a target oxygen content of the mixed gas.

以下僅以實施例說明本發明可能之實施態樣,然並非用以限制本發明所欲保護之範疇,合先敘明。The following examples are merely used to illustrate possible implementations of the present invention, but are not intended to limit the scope of protection of the present invention, so it should be noted in advance.

請參考圖1至4,其顯示本發明之一較佳實施例,本發明之氣體供應裝置1供連接於一半導體製程設備2與一廢氣處理系統3之間,包括:一第一進氣單元10、一第二進氣單元20、一混合腔室30、一供氣通道40及一控制單元50。Please refer to Figures 1 to 4, which show a preferred embodiment of the present invention. The gas supply device 1 of the present invention is connected between a semiconductor process equipment 2 and a waste gas treatment system 3, and includes: a first air intake unit 10, a second air intake unit 20, a mixing chamber 30, a gas supply channel 40 and a control unit 50.

該第一進氣單元10供引入一第一氣體且包括一第一進氣通道11及一設於該第一進氣通道11之第一流量控制器12;該第二進氣單元20供引入一第二氣體且包括一第二進氣通道21及一設於該第二進氣通道21之第二流量控制器22;該混合腔室30分別連通該第一進氣通道11及該第二進氣通道21以供該第一氣體及該第二氣體混合形成一混合氣體;該供氣通道40連通該混合腔室30且供連通該半導體製程設備2之一排氣管路210,該排氣管路210供排出一廢氣至該廢氣處理系統3;該控制單元50連接該第一流量控制器12及該第二流量控制器22而可分別控制該第一氣體及該第二氣體輸入該混合腔室30之進氣量。藉此,該氣體供應裝置1可依據使用需求調整該第一氣體及該第二氣體之含量,並經由該供氣通道40輸入該排氣管路210中以稀釋該廢氣或與該廢氣中之物質發生反應,進而避免該廢氣中之物質於該排氣管路210拆除時與外部空氣產生反應,操作安全性佳。The first air intake unit 10 is used to introduce a first gas and includes a first air intake channel 11 and a first flow controller 12 arranged on the first air intake channel 11; the second air intake unit 20 is used to introduce a second gas and includes a second air intake channel 21 and a second flow controller 22 arranged on the second air intake channel 21; the mixing chamber 30 is respectively connected to the first air intake channel 11 and the second air intake channel 21 so that the first gas and the second gas are mixed to form a mixed gas; the air supply channel 40 is connected to the mixing chamber 30 and is connected to an exhaust pipe 210 of the semiconductor process equipment 2, and the exhaust pipe 210 is used to discharge a waste gas to the waste gas treatment system 3; the control unit 50 is connected to the first flow controller 12 and the second flow controller 22 and can respectively control the intake amount of the first gas and the second gas input into the mixing chamber 30. Thereby, the gas supply device 1 can adjust the content of the first gas and the second gas according to the use demand, and input them into the exhaust pipe 210 through the gas supply channel 40 to dilute the exhaust gas or react with the substances in the exhaust gas, thereby preventing the substances in the exhaust gas from reacting with the external air when the exhaust pipe 210 is removed, and the operation safety is good.

該氣體供應裝置1另包括一壓力感測器220及一可阻斷該供氣通道40之閥件51,該壓力感測器220供感測該排氣管路210內之一氣體壓力,當該氣體壓力大於一壓力上限值時,該控制單元50控制該閥件51阻斷該供氣通道40,避免管內壓力過大以確保操作安全。於本實施例中,該壓力感測器220為該半導體製程設備2之部分,例如設於該半導體製程設備2之抽氣泵浦,並藉由有線或無線之方式將其感測結果傳輸至該控制單元50;於其他實施例中,該壓力感測器亦可設於該供氣通道連接於該排氣管路之部分。The gas supply device 1 further includes a pressure sensor 220 and a valve 51 that can block the gas supply channel 40. The pressure sensor 220 is used to sense a gas pressure in the exhaust pipe 210. When the gas pressure is greater than a pressure upper limit, the control unit 50 controls the valve 51 to block the gas supply channel 40 to prevent excessive pressure in the pipe to ensure safe operation. In this embodiment, the pressure sensor 220 is a part of the semiconductor process equipment 2, such as an exhaust pump disposed in the semiconductor process equipment 2, and transmits its sensing result to the control unit 50 by wired or wireless means; in other embodiments, the pressure sensor can also be disposed in the part of the gas supply channel connected to the exhaust pipe.

該氣體供應裝置1另包括一含氧感測器60及一旁通管路70,該旁通管路70供連通該混合腔室30與一外部環境以排除該混合腔室30中多餘之氣體,該含氧感測器60連接該控制單元50且連接於該旁通管路70與該供氣通道40其中一者與該混合腔室30之間,可量測該混合氣體中之含氧量以確認其符合該控制單元50之調控,避免誤差造成危險。The gas supply device 1 further includes an oxygen sensor 60 and a bypass pipe 70. The bypass pipe 70 is used to connect the mixing chamber 30 with an external environment to remove excess gas in the mixing chamber 30. The oxygen sensor 60 is connected to the control unit 50 and is connected between the bypass pipe 70 and one of the gas supply channel 40 and the mixing chamber 30. It can measure the oxygen content in the mixed gas to confirm that it complies with the regulation of the control unit 50 to avoid danger caused by errors.

於本實施例中,該第一氣體為氮氣,該第二氣體為空氣,該控制單元50依據該混合氣體之一目標含氧量改變該第一氣體與該第二氣體之進氣量。於更換該排氣管路210前,操作者可先將該供氣通道40與該排氣管路210連通,該控制單元50可依序執行一第一供氣階段及一第二供氣階段。於該第一供氣階段中,該控制單元50控制該閥件51關閉以使該混合腔室30與該排氣管路210不連通並使該第一流量控制器12使該第一氣體之進氣量於一第一時段內漸增,同時控制該第二流量控制器22使該第二氣體之進氣量於該第一時段內漸減,此時該混合空氣中之氮氣含量增加,可除去該混合腔室30內之水氣及雜質並使其自該旁通管路70排出。於該第二供氣階段中,該控制單元50控制該第一流量控制器12使該第一氣體之進氣量於一第二時段內漸減,同時控制該第二流量控制器22使該第二氣體之進氣量於該第二時段內漸增,提高該混合氣體之含氧量,藉此當該供氣通道40連通該排氣管路210時,該混合氣體內之氧氣可與該廢氣中或黏附於管壁之物質反應燃燒,進而確保拆除該排氣管路210時之安全性。於該第一供氣階段之後,該控制單元50較佳可控制該閥件51使該混合腔室30與該排氣管路210可相連通,進而可排除該排氣管路210內之原有氣體,減少該第二供氣階段中之該混合氣體的濃度波動,且可使該排氣管路210之氣體含氧量於該第二供氣階段隨著該混合氣體之供入而逐漸提升,有效提升操作安全性。In this embodiment, the first gas is nitrogen, the second gas is air, and the control unit 50 changes the intake volume of the first gas and the second gas according to a target oxygen content of the mixed gas. Before replacing the exhaust pipe 210, the operator can first connect the air supply channel 40 with the exhaust pipe 210, and the control unit 50 can sequentially execute a first air supply stage and a second air supply stage. In the first air supply stage, the control unit 50 controls the valve 51 to close so that the mixing chamber 30 is disconnected from the exhaust pipe 210 and the first flow controller 12 gradually increases the intake volume of the first gas within a first period of time. At the same time, the second flow controller 22 is controlled to gradually decrease the intake volume of the second gas within the first period of time. At this time, the nitrogen content in the mixed air increases, which can remove the water vapor and impurities in the mixing chamber 30 and discharge them from the bypass pipe 70. In the second air supply stage, the control unit 50 controls the first flow controller 12 to gradually decrease the intake volume of the first gas in a second period, and at the same time controls the second flow controller 22 to gradually increase the intake volume of the second gas in the second period, thereby increasing the oxygen content of the mixed gas. When the air supply channel 40 is connected to the exhaust pipe 210, the oxygen in the mixed gas can react and burn with the substances in the exhaust gas or adhered to the pipe wall, thereby ensuring the safety when removing the exhaust pipe 210. After the first air supply stage, the control unit 50 can preferably control the valve 51 to connect the mixing chamber 30 with the exhaust pipe 210, thereby removing the original gas in the exhaust pipe 210, reducing the concentration fluctuation of the mixed gas in the second air supply stage, and gradually increasing the oxygen content of the gas in the exhaust pipe 210 as the mixed gas is supplied in the second air supply stage, thereby effectively improving operational safety.

較佳地,該氣體供應裝置1另包括一壓力控制單元80,該壓力控制單元80包括一設於該第一進氣通道11之一第一調壓閥81及一設於該第二進氣通道21之第二調壓閥82,該第一調壓閥81及該第二調壓閥82供手動調整該第一氣體及該第二氣體輸入該混合腔室30之進氣量。該氣體供應裝置1另包括一連接該控制單元50之溫度感測器310,該溫度感測器310供感測該排氣管路210內之溫度;於本實施例中,該溫度感測器310為該廢氣處理系統3之一部件,並藉由有線或無線之方式將其感測結果傳輸至該控制單元50。藉此,於該第二供氣階段時,可依據該溫度感測器310之感測結果判斷該排氣管路210內之物質是否燃燒完;當該溫度感測器310之一感測溫度低於一預設溫度(表示該排氣管路210內之可燃物質已燃燒完),該操作者可操作該第一調壓閥81及該第二調壓閥82以對該排氣管路吹入氮氣,進而排出管內殘留物,即可安全無虞地拆除該排氣管路210。於其他實施例中,該溫度感測器亦可設於該供氣通道連接於該排氣管路之部分。Preferably, the gas supply device 1 further comprises a pressure control unit 80, the pressure control unit 80 comprises a first pressure regulating valve 81 disposed in the first air inlet passage 11 and a second pressure regulating valve 82 disposed in the second air inlet passage 21, the first pressure regulating valve 81 and the second pressure regulating valve 82 are used to manually adjust the intake amount of the first gas and the second gas input into the mixing chamber 30. The gas supply device 1 further comprises a temperature sensor 310 connected to the control unit 50, the temperature sensor 310 is used to sense the temperature in the exhaust pipe 210; in this embodiment, the temperature sensor 310 is a component of the exhaust gas treatment system 3, and transmits its sensing result to the control unit 50 by wired or wireless means. Thus, during the second air supply stage, it can be determined whether the material in the exhaust pipe 210 is completely burned according to the sensing result of the temperature sensor 310; when the sensing temperature of the temperature sensor 310 is lower than a preset temperature (indicating that the combustible material in the exhaust pipe 210 has been completely burned), the operator can operate the first pressure regulating valve 81 and the second pressure regulating valve 82 to blow nitrogen into the exhaust pipe, thereby exhausting the residue in the pipe, and the exhaust pipe 210 can be safely removed. In other embodiments, the temperature sensor can also be arranged at the part of the air supply channel connected to the exhaust pipe.

該氣體供應裝置1另包括一推車本體90,該推車本體90包括一殼體91及複數設於該殼體91之一底側之滾輪組件92,該第一進氣單元10、該第二進氣單元20、該混合腔室30及該控制單元50配置於該殼體91內部,便於移動以使用於需要之半導體製程設備2,機動性佳。較佳地,該第一進氣通道11、該第二進氣通道21及該供氣通道40之連接端固定於該殼體91之同一側壁上,避免非預期之碰撞且便於操作。The gas supply device 1 further includes a cart body 90, which includes a housing 91 and a plurality of roller assemblies 92 disposed on a bottom side of the housing 91. The first air intake unit 10, the second air intake unit 20, the mixing chamber 30 and the control unit 50 are disposed inside the housing 91, which is convenient for movement to be used in the required semiconductor process equipment 2, and has good mobility. Preferably, the connection ends of the first air intake channel 11, the second air intake channel 21 and the air supply channel 40 are fixed on the same side wall of the housing 91 to avoid unexpected collisions and facilitate operation.

較佳地,該氣體供應裝置1另包括一設於該供氣通道40且連接該控制單元50之流量計52及一連接該控制單元50之提示單元53,當該控制單元50判斷該流量計52之一檢測值不符合一預設流量值時,該控制單元50控制該提示單元53發出一提示訊號,藉以精確控制供氣量且可及時發現異常,使用安全性佳。該提示訊號包括燈號、聲音、文字及圖樣至少其中一者,可以需求選用。該控制單元50另包括一設於該殼體91之操作顯示介面54,該操作顯示介面54可供外部操作並設定該壓力上限值及該預設流量值,以符合不同使用需求。Preferably, the gas supply device 1 further includes a flow meter 52 disposed in the gas supply channel 40 and connected to the control unit 50 and a prompt unit 53 connected to the control unit 50. When the control unit 50 determines that a detection value of the flow meter 52 does not meet a preset flow value, the control unit 50 controls the prompt unit 53 to send a prompt signal, so as to accurately control the gas supply and detect abnormalities in time, and the use safety is good. The prompt signal includes at least one of a light, sound, text and a picture, which can be selected as needed. The control unit 50 also includes an operation display interface 54 disposed in the housing 91, and the operation display interface 54 can be used for external operation and setting the pressure upper limit value and the preset flow value to meet different usage requirements.

較佳地,該第二進氣單元20另包括一供去除該第二氣體中之水氣之除水裝置23,有效去除空氣中之水氣,避免影響內部之溫度、濕度且可保護內部元件;該除水裝置23包括一儲液桶231,該儲液桶231設於該殼體91外,便於移動。Preferably, the second air intake unit 20 further includes a dehydration device 23 for removing moisture from the second gas, which effectively removes moisture from the air, avoids affecting the internal temperature and humidity, and protects internal components; the dehydration device 23 includes a liquid storage barrel 231, which is disposed outside the housing 91 for easy movement.

1:氣體供應裝置 2:半導體製程設備 3:廢氣處理系統 10:第一進氣單元 11:第一進氣通道 12:第一流量控制器 20:第二進氣單元 21:第二進氣通道 22:第二流量控制器 23:除水裝置 231:儲液桶 30:混合腔室 40:供氣通道 50:控制單元 51:閥件 52:流量計 53:提示單元 54:操作顯示介面 60:含氧感測器 70:旁通管路 80:壓力控制單元 81:第一調壓閥 82:第二調壓閥 90:推車本體 91:殼體 92:滾輪組件 210:排氣管路 220:壓力感測器 310:溫度感測器 1: Gas supply device 2: Semiconductor process equipment 3: Waste gas treatment system 10: First air intake unit 11: First air intake channel 12: First flow controller 20: Second air intake unit 21: Second air intake channel 22: Second flow controller 23: Water removal device 231: Liquid storage tank 30: Mixing chamber 40: Air supply channel 50: Control unit 51: Valve 52: Flow meter 53: Prompt unit 54: Operation display interface 60: Oxygen sensor 70: Bypass line 80: Pressure control unit 81: First pressure regulating valve 82: Second pressure regulating valve 90: Cart body 91: Shell 92: Roller assembly 210: Exhaust pipe 220: Pressure sensor 310: Temperature sensor

圖1為本發明一較佳實施例之立體圖。 圖2為本發明一較佳實施例另一視角之立體圖。 圖3為本發明一較佳實施例之後視圖。 圖4為本發明一較佳實施例之結構方塊圖。 Figure 1 is a three-dimensional diagram of a preferred embodiment of the present invention. Figure 2 is a three-dimensional diagram of another preferred embodiment of the present invention. Figure 3 is a rear view of a preferred embodiment of the present invention. Figure 4 is a structural block diagram of a preferred embodiment of the present invention.

11:第一進氣通道 21:第二進氣通道 231:儲液桶 40:供氣通道 53:提示單元 11: First air inlet channel 21: Second air inlet channel 231: Liquid storage tank 40: Air supply channel 53: Prompt unit

Claims (8)

一種氣體供應裝置,供連接於一半導體製程設備與一廢氣處理系統之間,包括: 一第一進氣單元,供引入一第一氣體,包括一第一進氣通道及一設於該第一進氣通道之第一流量控制器; 一第二進氣單元,供引入一第二氣體,包括一第二進氣通道及一設於該第二進氣通道之第二流量控制器; 一混合腔室,分別連通該第一進氣通道及該第二進氣通道,供該第一氣體及該第二氣體混合形成一混合氣體; 一供氣通道,連通該混合腔室且供連通該半導體製程設備之一排氣管路,該排氣管路供排出一廢氣至該廢氣處理系統;及 一控制單元,連接該第一流量控制器及該第二流量控制器,可分別控制該第一氣體及該第二氣體輸入該混合腔室之進氣量; 其中該第一氣體為氮氣,該第二氣體為空氣,該控制單元依據該混合氣體之一目標含氧量改變該第一氣體與該第二氣體之進氣量。 A gas supply device for connecting between a semiconductor process equipment and a waste gas treatment system, comprising: a first air intake unit for introducing a first gas, comprising a first air intake channel and a first flow controller provided in the first air intake channel; a second air intake unit for introducing a second gas, comprising a second air intake channel and a second flow controller provided in the second air intake channel; a mixing chamber, respectively connected to the first air intake channel and the second air intake channel, for mixing the first gas and the second gas to form a mixed gas; a gas supply channel, connected to the mixing chamber and to an exhaust pipeline of the semiconductor process equipment, the exhaust pipeline for exhausting a waste gas to the waste gas treatment system; and A control unit is connected to the first flow controller and the second flow controller, and can control the intake volume of the first gas and the second gas into the mixing chamber respectively; Wherein, the first gas is nitrogen, and the second gas is air, and the control unit changes the intake volume of the first gas and the second gas according to a target oxygen content of the mixed gas. 如請求項1所述的氣體供應裝置,另包括一含氧感測器及一旁通管路,其中該旁通管路供連通該混合腔室與一外部環境,該含氧感測器連接該控制單元且連接於該旁通管路與該供氣通道其中一者與該混合腔室之間。The gas supply device as described in claim 1 further includes an oxygen sensor and a bypass pipe, wherein the bypass pipe is used to connect the mixing chamber with an external environment, and the oxygen sensor is connected to the control unit and connected between the bypass pipe and one of the gas supply channels and the mixing chamber. 如請求項1所述的氣體供應裝置,其中該第二進氣單元另包括一供去除該第二氣體中之水氣之除水裝置。A gas supply device as described in claim 1, wherein the second air inlet unit further includes a dehydration device for removing water vapor from the second gas. 如請求項1所述的氣體供應裝置,另包括一壓力感測器及一可阻斷該供氣通道之閥件,其中該壓力感測器供感測該排氣管路內之一氣體壓力,當該氣體壓力大於一壓力上限值時,該控制單元控制該閥件阻斷該供氣通道。The gas supply device as described in claim 1 further includes a pressure sensor and a valve that can block the air supply channel, wherein the pressure sensor is used to sense a gas pressure in the exhaust pipe, and when the gas pressure is greater than an upper pressure limit, the control unit controls the valve to block the air supply channel. 如請求項1所述的氣體供應裝置,另包括一設於該供氣通道且連接該控制單元之流量計及一連接該控制單元之提示單元,其中當該控制單元判斷該流量計之一檢測值不符合一預設流量值時,該控制單元控制該提示單元發出一提示訊號。The gas supply device as described in claim 1 further includes a flow meter arranged in the gas supply channel and connected to the control unit, and a prompt unit connected to the control unit, wherein when the control unit determines that a detection value of the flow meter does not meet a preset flow value, the control unit controls the prompt unit to send a prompt signal. 如請求項1所述的氣體供應裝置,另包括一壓力控制單元,其中該壓力控制單元包括一設於該第一進氣通道之一第一調壓閥及一設於該第二進氣通道之第二調壓閥,該第一調壓閥及該第二調壓閥供手動調整該第一氣體及該第二氣體輸入該混合腔室之進氣量。The gas supply device as described in claim 1 further includes a pressure control unit, wherein the pressure control unit includes a first pressure regulating valve arranged in the first air intake passage and a second pressure regulating valve arranged in the second air intake passage, and the first pressure regulating valve and the second pressure regulating valve are used to manually adjust the intake amount of the first gas and the second gas input into the mixing chamber. 如請求項1所述的氣體供應裝置,另包括一推車本體,其中該推車本體包括一殼體及複數設於該殼體之一底側之滾輪組件,該第一進氣單元、該第二進氣單元、該混合腔室及該控制單元配置於該殼體內部,該第一進氣通道、該第二進氣通道及該供氣通道之連接端固定於該殼體之同一側壁上。The gas supply device as described in claim 1 further includes a trolley body, wherein the trolley body includes a shell and a plurality of roller assemblies arranged on a bottom side of the shell, the first air intake unit, the second air intake unit, the mixing chamber and the control unit are arranged inside the shell, and the connecting ends of the first air intake channel, the second air intake channel and the air supply channel are fixed on the same side wall of the shell. 如請求項2所述的氣體供應裝置,其中該控制單元可依序執行一第一供氣階段及一第二供氣階段;於該第一供氣階段中,該控制單元控制該第一流量控制器使該第一氣體之進氣量於一第一時段內漸增,同時控制該第二流量控制器使該第二氣體之進氣量於該第一時段內漸減;於該第二供氣階段中,該控制單元控制該第一流量控制器使該第一氣體之進氣量於一第二時段內漸減,同時控制該第二流量控制器使該第二氣體之進氣量於該第二時段內漸增;及該氣體供應裝置另包括一連接該控制單元之溫度感測器,該溫度感測器供感測該排氣管路內之溫度。A gas supply device as described in claim 2, wherein the control unit can sequentially execute a first air supply stage and a second air supply stage; in the first air supply stage, the control unit controls the first flow controller to gradually increase the intake volume of the first gas within a first time period, and simultaneously controls the second flow controller to gradually decrease the intake volume of the second gas within the first time period; in the second air supply stage, the control unit controls the first flow controller to gradually decrease the intake volume of the first gas within a second time period, and simultaneously controls the second flow controller to gradually increase the intake volume of the second gas within the second time period; and the gas supply device further includes a temperature sensor connected to the control unit, and the temperature sensor is used to sense the temperature in the exhaust pipe.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340991A (en) * 1989-07-10 1991-02-21 Fuji Electric Co Ltd Dilution gas supply device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340991A (en) * 1989-07-10 1991-02-21 Fuji Electric Co Ltd Dilution gas supply device

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