TWI872998B - Gas supply device - Google Patents
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- TWI872998B TWI872998B TW113111116A TW113111116A TWI872998B TW I872998 B TWI872998 B TW I872998B TW 113111116 A TW113111116 A TW 113111116A TW 113111116 A TW113111116 A TW 113111116A TW I872998 B TWI872998 B TW I872998B
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- 239000007789 gas Substances 0.000 claims abstract description 120
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 14
- 230000001105 regulatory effect Effects 0.000 claims description 12
- 239000002912 waste gas Substances 0.000 claims description 11
- 230000018044 dehydration Effects 0.000 claims description 3
- 238000006297 dehydration reaction Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000712 assembly Effects 0.000 claims description 2
- 238000000429 assembly Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
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Abstract
Description
本發明係有關於一種可連接於一半導體製程設備之氣體供應裝置。The present invention relates to a gas supply device which can be connected to a semiconductor process equipment.
一般半導體製程設備(例如磊晶)中常需要使用特殊反應氣體以與晶圓之表面發生反應,反應後之廢氣中可能含有對環境或人體有害或易燃之物質,因而需要經廢氣處理系統處理後方可排出至大氣。In general semiconductor process equipment (such as epitaxy), special reactive gases are often required to react with the surface of the wafer. The waste gas after the reaction may contain substances that are harmful to the environment or human body or flammable. Therefore, it needs to be treated by the waste gas treatment system before it can be discharged into the atmosphere.
該半導體製程設備與該廢氣處理系統由一排氣管相互連通,於長期使用下,廢氣中之物質常會黏附於該排氣管之管壁,因而需定期更換該排氣管。然而,於拆卸該排氣管時,管內殘留之廢氣可能導致空氣汙染或有燃燒、爆炸之危險性,存在安全疑慮。The semiconductor process equipment and the exhaust gas treatment system are interconnected by an exhaust pipe. After long-term use, the substances in the exhaust gas often adhere to the wall of the exhaust pipe, so the exhaust pipe needs to be replaced regularly. However, when the exhaust pipe is disassembled, the residual exhaust gas in the pipe may cause air pollution or the risk of combustion or explosion, which poses a safety concern.
因此,有必要提供一種新穎且具有進步性之氣體供應裝置,以解決上述之問題。Therefore, it is necessary to provide a novel and advanced gas supply device to solve the above-mentioned problems.
本發明之主要目的在於提供一種氣體供應裝置,有助於排除有害氣體,確保維修或保養半導體製程設備時之操作安全。The main purpose of the present invention is to provide a gas supply device that helps to remove harmful gases and ensures the safety of operation when repairing or maintaining semiconductor process equipment.
為達成上述目的,本發明提供一種氣體供應裝置,供連接於一半導體製程設備與一廢氣處理系統之間,包括:一第一進氣單元、一第二進氣單元、一混合腔室、一供氣通道及一控制單元。該第一進氣單元供引入一第一氣體且包括一第一進氣通道及一設於該第一進氣通道之第一流量控制器;該第二進氣單元供引入一第二氣體且包括一第二進氣通道及一設於該第二進氣通道之第二流量控制器;該混合腔室分別連通該第一進氣通道及該第二進氣通道以供該第一氣體及該第二氣體混合形成一混合氣體;該供氣通道連通該混合腔室且供連通該半導體製程設備之一排氣管路,該排氣管路供排出一廢氣至該廢氣處理系統;該控制單元連接該第一流量控制器及該第二流量控制器而可分別控制該第一氣體及該第二氣體輸入該混合腔室之進氣量。其中該第一氣體為氮氣,該第二氣體為空氣,該控制單元依據該混合氣體之一目標含氧量改變該第一氣體與該第二氣體之進氣量。To achieve the above object, the present invention provides a gas supply device for connecting between semiconductor process equipment and an exhaust gas treatment system, including: a first air intake unit, a second air intake unit, a mixing chamber, a gas supply channel and a control unit. The first air intake unit is used to introduce a first gas and includes a first air intake channel and a first flow controller disposed in the first air intake channel; the second air intake unit is used to introduce a second gas and includes a second air intake channel and a second flow controller disposed in the second air intake channel; the mixing chamber is respectively connected to the first air intake channel and the second air intake channel for the first gas and the second gas to mix to form a mixed gas; the air supply channel is connected to the mixing chamber and is connected to an exhaust pipeline of the semiconductor process equipment, and the exhaust pipeline is used to exhaust a waste gas to the waste gas treatment system; the control unit is connected to the first flow controller and the second flow controller and can respectively control the intake amount of the first gas and the second gas input into the mixing chamber. The first gas is nitrogen, and the second gas is air. The control unit changes the intake amount of the first gas and the second gas according to a target oxygen content of the mixed gas.
以下僅以實施例說明本發明可能之實施態樣,然並非用以限制本發明所欲保護之範疇,合先敘明。The following examples are merely used to illustrate possible implementations of the present invention, but are not intended to limit the scope of protection of the present invention, so it should be noted in advance.
請參考圖1至4,其顯示本發明之一較佳實施例,本發明之氣體供應裝置1供連接於一半導體製程設備2與一廢氣處理系統3之間,包括:一第一進氣單元10、一第二進氣單元20、一混合腔室30、一供氣通道40及一控制單元50。Please refer to Figures 1 to 4, which show a preferred embodiment of the present invention. The gas supply device 1 of the present invention is connected between a
該第一進氣單元10供引入一第一氣體且包括一第一進氣通道11及一設於該第一進氣通道11之第一流量控制器12;該第二進氣單元20供引入一第二氣體且包括一第二進氣通道21及一設於該第二進氣通道21之第二流量控制器22;該混合腔室30分別連通該第一進氣通道11及該第二進氣通道21以供該第一氣體及該第二氣體混合形成一混合氣體;該供氣通道40連通該混合腔室30且供連通該半導體製程設備2之一排氣管路210,該排氣管路210供排出一廢氣至該廢氣處理系統3;該控制單元50連接該第一流量控制器12及該第二流量控制器22而可分別控制該第一氣體及該第二氣體輸入該混合腔室30之進氣量。藉此,該氣體供應裝置1可依據使用需求調整該第一氣體及該第二氣體之含量,並經由該供氣通道40輸入該排氣管路210中以稀釋該廢氣或與該廢氣中之物質發生反應,進而避免該廢氣中之物質於該排氣管路210拆除時與外部空氣產生反應,操作安全性佳。The first
該氣體供應裝置1另包括一壓力感測器220及一可阻斷該供氣通道40之閥件51,該壓力感測器220供感測該排氣管路210內之一氣體壓力,當該氣體壓力大於一壓力上限值時,該控制單元50控制該閥件51阻斷該供氣通道40,避免管內壓力過大以確保操作安全。於本實施例中,該壓力感測器220為該半導體製程設備2之部分,例如設於該半導體製程設備2之抽氣泵浦,並藉由有線或無線之方式將其感測結果傳輸至該控制單元50;於其他實施例中,該壓力感測器亦可設於該供氣通道連接於該排氣管路之部分。The gas supply device 1 further includes a
該氣體供應裝置1另包括一含氧感測器60及一旁通管路70,該旁通管路70供連通該混合腔室30與一外部環境以排除該混合腔室30中多餘之氣體,該含氧感測器60連接該控制單元50且連接於該旁通管路70與該供氣通道40其中一者與該混合腔室30之間,可量測該混合氣體中之含氧量以確認其符合該控制單元50之調控,避免誤差造成危險。The gas supply device 1 further includes an
於本實施例中,該第一氣體為氮氣,該第二氣體為空氣,該控制單元50依據該混合氣體之一目標含氧量改變該第一氣體與該第二氣體之進氣量。於更換該排氣管路210前,操作者可先將該供氣通道40與該排氣管路210連通,該控制單元50可依序執行一第一供氣階段及一第二供氣階段。於該第一供氣階段中,該控制單元50控制該閥件51關閉以使該混合腔室30與該排氣管路210不連通並使該第一流量控制器12使該第一氣體之進氣量於一第一時段內漸增,同時控制該第二流量控制器22使該第二氣體之進氣量於該第一時段內漸減,此時該混合空氣中之氮氣含量增加,可除去該混合腔室30內之水氣及雜質並使其自該旁通管路70排出。於該第二供氣階段中,該控制單元50控制該第一流量控制器12使該第一氣體之進氣量於一第二時段內漸減,同時控制該第二流量控制器22使該第二氣體之進氣量於該第二時段內漸增,提高該混合氣體之含氧量,藉此當該供氣通道40連通該排氣管路210時,該混合氣體內之氧氣可與該廢氣中或黏附於管壁之物質反應燃燒,進而確保拆除該排氣管路210時之安全性。於該第一供氣階段之後,該控制單元50較佳可控制該閥件51使該混合腔室30與該排氣管路210可相連通,進而可排除該排氣管路210內之原有氣體,減少該第二供氣階段中之該混合氣體的濃度波動,且可使該排氣管路210之氣體含氧量於該第二供氣階段隨著該混合氣體之供入而逐漸提升,有效提升操作安全性。In this embodiment, the first gas is nitrogen, the second gas is air, and the
較佳地,該氣體供應裝置1另包括一壓力控制單元80,該壓力控制單元80包括一設於該第一進氣通道11之一第一調壓閥81及一設於該第二進氣通道21之第二調壓閥82,該第一調壓閥81及該第二調壓閥82供手動調整該第一氣體及該第二氣體輸入該混合腔室30之進氣量。該氣體供應裝置1另包括一連接該控制單元50之溫度感測器310,該溫度感測器310供感測該排氣管路210內之溫度;於本實施例中,該溫度感測器310為該廢氣處理系統3之一部件,並藉由有線或無線之方式將其感測結果傳輸至該控制單元50。藉此,於該第二供氣階段時,可依據該溫度感測器310之感測結果判斷該排氣管路210內之物質是否燃燒完;當該溫度感測器310之一感測溫度低於一預設溫度(表示該排氣管路210內之可燃物質已燃燒完),該操作者可操作該第一調壓閥81及該第二調壓閥82以對該排氣管路吹入氮氣,進而排出管內殘留物,即可安全無虞地拆除該排氣管路210。於其他實施例中,該溫度感測器亦可設於該供氣通道連接於該排氣管路之部分。Preferably, the gas supply device 1 further comprises a
該氣體供應裝置1另包括一推車本體90,該推車本體90包括一殼體91及複數設於該殼體91之一底側之滾輪組件92,該第一進氣單元10、該第二進氣單元20、該混合腔室30及該控制單元50配置於該殼體91內部,便於移動以使用於需要之半導體製程設備2,機動性佳。較佳地,該第一進氣通道11、該第二進氣通道21及該供氣通道40之連接端固定於該殼體91之同一側壁上,避免非預期之碰撞且便於操作。The gas supply device 1 further includes a
較佳地,該氣體供應裝置1另包括一設於該供氣通道40且連接該控制單元50之流量計52及一連接該控制單元50之提示單元53,當該控制單元50判斷該流量計52之一檢測值不符合一預設流量值時,該控制單元50控制該提示單元53發出一提示訊號,藉以精確控制供氣量且可及時發現異常,使用安全性佳。該提示訊號包括燈號、聲音、文字及圖樣至少其中一者,可以需求選用。該控制單元50另包括一設於該殼體91之操作顯示介面54,該操作顯示介面54可供外部操作並設定該壓力上限值及該預設流量值,以符合不同使用需求。Preferably, the gas supply device 1 further includes a
較佳地,該第二進氣單元20另包括一供去除該第二氣體中之水氣之除水裝置23,有效去除空氣中之水氣,避免影響內部之溫度、濕度且可保護內部元件;該除水裝置23包括一儲液桶231,該儲液桶231設於該殼體91外,便於移動。Preferably, the second
1:氣體供應裝置 2:半導體製程設備 3:廢氣處理系統 10:第一進氣單元 11:第一進氣通道 12:第一流量控制器 20:第二進氣單元 21:第二進氣通道 22:第二流量控制器 23:除水裝置 231:儲液桶 30:混合腔室 40:供氣通道 50:控制單元 51:閥件 52:流量計 53:提示單元 54:操作顯示介面 60:含氧感測器 70:旁通管路 80:壓力控制單元 81:第一調壓閥 82:第二調壓閥 90:推車本體 91:殼體 92:滾輪組件 210:排氣管路 220:壓力感測器 310:溫度感測器 1: Gas supply device 2: Semiconductor process equipment 3: Waste gas treatment system 10: First air intake unit 11: First air intake channel 12: First flow controller 20: Second air intake unit 21: Second air intake channel 22: Second flow controller 23: Water removal device 231: Liquid storage tank 30: Mixing chamber 40: Air supply channel 50: Control unit 51: Valve 52: Flow meter 53: Prompt unit 54: Operation display interface 60: Oxygen sensor 70: Bypass line 80: Pressure control unit 81: First pressure regulating valve 82: Second pressure regulating valve 90: Cart body 91: Shell 92: Roller assembly 210: Exhaust pipe 220: Pressure sensor 310: Temperature sensor
圖1為本發明一較佳實施例之立體圖。 圖2為本發明一較佳實施例另一視角之立體圖。 圖3為本發明一較佳實施例之後視圖。 圖4為本發明一較佳實施例之結構方塊圖。 Figure 1 is a three-dimensional diagram of a preferred embodiment of the present invention. Figure 2 is a three-dimensional diagram of another preferred embodiment of the present invention. Figure 3 is a rear view of a preferred embodiment of the present invention. Figure 4 is a structural block diagram of a preferred embodiment of the present invention.
11:第一進氣通道 21:第二進氣通道 231:儲液桶 40:供氣通道 53:提示單元 11: First air inlet channel 21: Second air inlet channel 231: Liquid storage tank 40: Air supply channel 53: Prompt unit
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| TW113111116A TWI872998B (en) | 2023-03-21 | 2023-03-21 | Gas supply device |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0340991A (en) * | 1989-07-10 | 1991-02-21 | Fuji Electric Co Ltd | Dilution gas supply device |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0340991A (en) * | 1989-07-10 | 1991-02-21 | Fuji Electric Co Ltd | Dilution gas supply device |
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