TWI869311B - Matrix-vector multiplication circuit and circuit configuring method of the same - Google Patents
Matrix-vector multiplication circuit and circuit configuring method of the same Download PDFInfo
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本揭示文件關於矩陣向量運算電路中的電阻值的配置技術,特別是關於可以改善輸出之線性度的矩陣向量運算電路及其電路配置方法。The present disclosure relates to a resistor configuration technique in a matrix vector operation circuit, and more particularly to a matrix vector operation circuit and a circuit configuration method thereof that can improve output linearity.
隨著現今半導體裝置的運算量日益增加,如何配置記憶體裝置內的陣列電路也成為了在設計記憶體裝置時的重點之一。在眾多陣列電路的配置中,混合模式(mixing-mode)矩陣向量(matrix-vector multiplication,MVM)的電路結構因為可以處理大量的輸入資料及權重值的運算而廣受使用。As the amount of computation in today's semiconductor devices increases, how to configure array circuits in memory devices has become one of the key points in designing memory devices. Among the many array circuit configurations, the mixing-mode matrix-vector multiplication (MVM) circuit structure is widely used because it can handle large amounts of input data and weight value operations.
為了確保運算結果正確,記憶體裝置需要能夠精確地計算出陣列電路的等效電阻值,以產生準確的輸出。然而,在現今的混合模式MVM電路的配置下,電路內部的權重存在分布不均的問題。換句話說,在現今的配置下,混合模式MVM電路的輸出之線性度不足,進而導致估測電阻值與實際電阻值之間的偏離,並可能產生不精確的輸出。因此,如何藉由調整混合模式MVM電路的配置來提升其輸出的線性度,是本領域的課題之一。In order to ensure that the calculation results are correct, the memory device needs to be able to accurately calculate the equivalent resistance value of the array circuit to produce accurate output. However, in the current configuration of mixed-mode MVM circuits, the weights inside the circuit are unevenly distributed. In other words, in the current configuration, the linearity of the output of the mixed-mode MVM circuit is insufficient, which leads to a deviation between the estimated resistance value and the actual resistance value, and may produce inaccurate output. Therefore, how to improve the linearity of the output of the mixed-mode MVM circuit by adjusting the configuration of the circuit is one of the topics in this field.
本揭示文件提供一種矩陣向量運算電路,用以呈現多個權重值。矩陣向量運算電路包含多個電阻串,多個電阻串各自包含多個權重單元。多個電阻串並聯耦接於兩個參考電壓之間,且每個電阻串的多個權重單元串聯耦接於該兩個參考電壓之間。多個權重單元形成多個組合,多個組合對應於多個權重值,每個組合中的多個權重單元分別在多個電阻串中具有相同次序。每個權重單元各自具有一狀態值,多個組合的多個權重單元的多個狀態值形成多個序列,多個序列分別對應於該多個權重值。多個序列的多個最高有效位所對應的多個權重單元位於多個電阻串的至少二者之中。The present disclosure document provides a matrix vector operation circuit for presenting multiple weight values. The matrix vector operation circuit includes multiple resistor strings, each of which includes multiple weight units. The multiple resistor strings are coupled in parallel between two reference voltages, and the multiple weight units of each resistor string are coupled in series between the two reference voltages. The multiple weight units form multiple combinations, the multiple combinations correspond to multiple weight values, and the multiple weight units in each combination have the same order in the multiple resistor strings. Each weight unit has a state value, and the multiple state values of the multiple weight units of the multiple combinations form multiple sequences, and the multiple sequences correspond to the multiple weight values. The multiple weight units corresponding to the multiple most significant bits of the multiple sequences are located in at least two of the multiple resistor strings.
在矩陣向量運算電路的一些實施例中,多個序列中的多個奇數序列的多個最高有效位所分別對應的多個權重單元位於多個電阻串的其中一者中,且多個序列中的多個偶數序列的多個最高有效位所分別對應的多個權重單元位於該多個電阻串的另外一者中。多個奇數序列相異於多個偶數序列。In some embodiments of the matrix vector operation circuit, the weight units corresponding to the most significant bits of the odd sequences in the plurality of sequences are located in one of the plurality of resistor strings, and the weight units corresponding to the most significant bits of the even sequences in the plurality of sequences are located in another one of the plurality of resistor strings. The odd sequences are different from the even sequences.
在矩陣向量運算電路的一些實施例中,多個奇數序列的多個最高有效位所對應的多個權重單元與多個偶數序列的多個最低有效位所對應的多個權重單元位於多個電阻串的相同一者中。多個偶數序列的多個最高有效位所對應的多個權重單元與多個奇數序列的多個最低有效位所對應的多個權重單元位於多個電阻串的另外相同一者中。In some embodiments of the matrix-vector operation circuit, the weight units corresponding to the most significant bits of the odd-numbered sequences and the weight units corresponding to the least significant bits of the even-numbered sequences are located in the same one of the resistor strings. The weight units corresponding to the most significant bits of the even-numbered sequences and the weight units corresponding to the least significant bits of the odd-numbered sequences are located in another same one of the resistor strings.
在矩陣向量運算電路的一些實施例中,多個奇數序列所對應的多個組合的多個權重單元與多個偶數序列所對應的多個組合的多個權重單元在多個電阻串中交替排列。In some embodiments of the matrix vector operation circuit, a plurality of weight units corresponding to a plurality of odd number sequences and a plurality of weight units corresponding to a plurality of even number sequences are alternately arranged in a plurality of resistor strings.
在矩陣向量運算電路的一些實施例中,多個權重單元的多個狀態值各自屬於位元0或位元1,多個權重值分別對應於多個組合中具有屬於位元1的狀態值的權重單元的數量。In some embodiments of the matrix vector operation circuit, multiple state values of multiple weight units each belong to
在矩陣向量運算電路的一些實施例中,多個序列屬於一元編碼(unary code)陣列,每個權重值分別對應於多個序列的對應一者中自最高有效位開始的連續的位元1的數量。In some embodiments of the matrix-vector operation circuit, the plurality of sequences belong to a unary code array, and each weight value corresponds to the number of
在矩陣向量運算電路的一些實施例中,多個序列的其中一者的最低有效位所對應的權重單元與多個序列相鄰一者的最高有效位所對應的權重單元位於多個電阻串的相同一者中。In some embodiments of the matrix-vector operation circuit, the weight unit corresponding to the least significant bit of one of the multiple sequences and the weight unit corresponding to the most significant bit of an adjacent one of the multiple sequences are located in the same one of the multiple resistor strings.
在矩陣向量運算電路的一些實施例中,矩陣向量運算電路更包含一控制電路,用以分別產生多個輸入訊號至多個權重單元。多個權重單元各自具有一電阻值,電阻值相關於狀態值,且相關於多個輸入訊號。In some embodiments of the matrix vector operation circuit, the matrix vector operation circuit further includes a control circuit for generating a plurality of input signals to a plurality of weight units respectively. The plurality of weight units each have a resistance value, and the resistance value is related to the state value and to the plurality of input signals.
在矩陣向量運算電路的一些實施例中,多個電阻串各自更包含一額外電阻。額外電阻串聯耦接於多個權重單元,用以防止多個電阻串發生快速充電行為。In some embodiments of the matrix vector operation circuit, each of the plurality of resistor strings further comprises an additional resistor. The additional resistor is coupled in series to the plurality of weight units to prevent the plurality of resistor strings from undergoing a fast charging behavior.
在矩陣向量運算電路的一些實施例中,多個權重單元及額外電阻各自具有一電阻值,且額外電阻的電阻值接近或大於每個權重單元的電阻值。In some embodiments of the matrix vector operation circuit, each of the plurality of weight units and the additional resistor has a resistance value, and the resistance value of the additional resistor is close to or greater than the resistance value of each weight unit.
本揭示文件提供一種電路配置方法,用以配置矩陣向量運算電路。矩陣向量運算電路包含一控制電路及並聯耦接於兩個參考電壓之間的多個電阻串。多個電阻串各自包含多個權重單元,且每個電阻串的多個權重單元串聯耦接於該兩個參考電壓之間。電路配置方法包含:藉由控制電路設定矩陣向量運算電路的多個權重值;藉由控制電路基於多個權重值決定多個序列,其中多個序列分別對應於多個權重值;以及藉由控制電路基於多個序列設置每個權重單元的一狀態值。多個權重單元形成對應於多個權重值的多個組合,每個組合中的多個權重單元分別在多個電阻串中具有相同次序。多個序列的多個最高有效位所對應的多個權重單元位於多個電阻串的至少二者之中。The present disclosure document provides a circuit configuration method for configuring a matrix vector operation circuit. The matrix vector operation circuit includes a control circuit and a plurality of resistor strings coupled in parallel between two reference voltages. The plurality of resistor strings each include a plurality of weight units, and the plurality of weight units of each resistor string are coupled in series between the two reference voltages. The circuit configuration method includes: setting a plurality of weight values of the matrix vector operation circuit by the control circuit; determining a plurality of sequences based on the plurality of weight values by the control circuit, wherein the plurality of sequences correspond to the plurality of weight values respectively; and setting a state value of each weight unit based on the plurality of sequences by the control circuit. The plurality of weight units form a plurality of combinations corresponding to the plurality of weight values, and the plurality of weight units in each combination have the same order in the plurality of resistor strings respectively. The weight units corresponding to the most significant bits of the sequences are located in at least two of the resistor strings.
在電路配置方法的一些實施例中,藉由控制電路基於多個權重值決定多個序列包含:藉由控制電路將多個序列分為多個奇數序列及多個偶數序列。多個奇數序列的多個最高有效位所分別對應的多個權重單元位於多個電阻串的其中一者中,且多個偶數序列的多個最高有效位所分別對應的多個權重單元位於多個電阻串的另外一者中。多個奇數序列相異於多個偶數序列。In some embodiments of the circuit configuration method, determining multiple sequences based on multiple weight values by the control circuit includes: dividing the multiple sequences into multiple odd sequences and multiple even sequences by the control circuit. Multiple weight units corresponding to multiple most significant bits of the multiple odd sequences are located in one of the multiple resistor strings, and multiple weight units corresponding to multiple most significant bits of the multiple even sequences are located in another one of the multiple resistor strings. The multiple odd sequences are different from the multiple even sequences.
在電路配置方法的一些實施例中,多個奇數序列的多個最高有效位所對應的多個權重單元與多個偶數序列的多個最低有效位所對應的多個權重單元位於多個電阻串的相同一者中。多個偶數序列的多個最高有效位所對應的多個權重單元與多個奇數序列的多個最低有效位所對應的多個權重單元位於多個電阻串的另外相同一者中。In some embodiments of the circuit configuration method, the weight units corresponding to the most significant bits of the odd-numbered sequences and the weight units corresponding to the least significant bits of the even-numbered sequences are located in the same one of the resistor strings. The weight units corresponding to the most significant bits of the even-numbered sequences and the weight units corresponding to the least significant bits of the odd-numbered sequences are located in another same one of the resistor strings.
在電路配置方法的一些實施例中,多個奇數序列所對應的多個組合的多個權重單元與多個偶數序列所對應的多個組合的多個權重單元在多個電阻串中交替排列。In some embodiments of the circuit configuration method, a plurality of weight units of a plurality of combinations corresponding to a plurality of odd-numbered sequences and a plurality of weight units of a plurality of combinations corresponding to a plurality of even-numbered sequences are alternately arranged in a plurality of resistor strings.
在電路配置方法的一些實施例中,藉由控制電路基於多個序列設置每個權重單元的狀態值包含:藉由控制電路將多個權重單元的多個狀態值各自設置為位元0或位元1。多個權重值分別對應於多個組合中具有屬於位元1的狀態值的權重單元的數量。In some embodiments of the circuit configuration method, setting the state value of each weight unit based on multiple sequences by the control circuit includes: setting multiple state values of the multiple weight units to
在電路配置方法的一些實施例中,多個序列屬於一元編碼陣列,每個權重值分別對應於多個序列的對應一者中自最高有效位開始的連續的位元1的數量。In some embodiments of the circuit configuration method, the plurality of sequences belong to a unary coding array, and each weight value corresponds to the number of
在電路配置方法的一些實施例中,多個序列的其中一者的最低有效位所對應的權重單元與多個序列相鄰一者的最高有效位所對應的權重單元位於多個電阻串的相同一者中。In some embodiments of the circuit configuration method, a weight unit corresponding to the least significant bit of one of the plurality of sequences and a weight unit corresponding to the most significant bit of an adjacent one of the plurality of sequences are located in the same one of the plurality of resistor strings.
在電路配置方法的一些實施例中,多個權重單元各自具有一電阻值,電阻值相關於狀態值。藉由控制電路基於多個序列設置每個權重單元的狀態值包含:藉由控制電路產生多個輸入訊號至多個權重單元,以控制每個權重單元的電阻值。In some embodiments of the circuit configuration method, each of the weight units has a resistance value, and the resistance value is related to the state value. Setting the state value of each weight unit based on multiple sequences by the control circuit includes: generating multiple input signals to the multiple weight units by the control circuit to control the resistance value of each weight unit.
在電路配置方法的一些實施例中,多個電阻串中各自更包含一額外電阻,額外電阻串聯耦接於該多個權重單元。電路配置方法更包含:藉由控制電路設定額外電阻的電阻值,以防止多個電阻串發生快速充電行為。In some embodiments of the circuit configuration method, each of the plurality of resistor strings further comprises an additional resistor, and the additional resistor is coupled in series to the plurality of weight units. The circuit configuration method further comprises: setting the resistance value of the additional resistor by a control circuit to prevent the plurality of resistor strings from undergoing rapid charging behavior.
在電路配置方法的一些實施例中,多個權重單元各自具有一電阻值,且額外電阻的電阻值接近或大於每個權重單元的電阻值。In some embodiments of the circuit configuration method, each of the plurality of weight units has a resistance value, and the resistance value of the additional resistor is close to or greater than the resistance value of each weight unit.
透過本揭示文件的矩陣向量運算電路及其電路配置方法,可以較平均地配置電路內部的權重值,進而提升矩陣向量運算電路的輸出的線性度,以輸出較精確的運算結果。Through the matrix vector operation circuit and the circuit configuration method disclosed in this document, the weight values inside the circuit can be configured more evenly, thereby improving the linearity of the output of the matrix vector operation circuit to output more accurate operation results.
以下將配合相關圖式來說明本揭示文件的實施例。在圖式中,相同的標號表示相同或類似的元件或方法流程。The following will be used in conjunction with the relevant drawings to illustrate the embodiments of the present disclosure. In the drawings, the same reference numerals represent the same or similar elements or method flows.
於本揭示文件中,當一元件被稱為「連結」時,可指「電性連接」或「光連接」,當一元件被稱為「耦接」時,可指「電性耦接」或「光耦接」。「連結」或「耦接」亦可用以表示二或多個元件間相互搭配操作或互動。除非內文中對於冠詞有所特別限定,否則「一」與「該」可泛指單一個或多個。將進一步理解的是,本文中所使用之「包含」、「包括」、「具有」及相似詞彙,指明其所記載的特徵、區域、整數、步驟、操作、元件與/或組件,但不排除其所述或額外的其一個或多個其它特徵、區域、整數、步驟、操作、元件、組件與/或其中之群組。In this disclosure document, when an element is referred to as "connected", it may refer to "electrical connection" or "optical connection", and when an element is referred to as "coupled", it may refer to "electrical coupling" or "optical coupling". "Connected" or "coupled" may also be used to indicate the coordinated operation or interaction between two or more elements. Unless the text specifically limits the articles, "one" and "the" may refer to one or more. It will be further understood that the words "include", "including", "have" and similar words used in this article specify the features, regions, integers, steps, operations, elements and/or components recorded therein, but do not exclude one or more other features, regions, integers, steps, operations, elements, components and/or groups thereof described therein or in addition.
第1圖為根據本揭示文件的一些實施例所繪示的矩陣向量運算電路100的示意圖。在一些實施例中,矩陣向量運算電路100包含電阻串110_1~110_M及控制電路120,用以呈現多個輸入值。關於矩陣向量運算電路100呈現多個權重值的方法,將在下文中詳細說明。FIG. 1 is a schematic diagram of a matrix
電阻串110_1~110_M各自包含多個權重單元。舉例而言,電阻串110_1包含權重單元W 11~W N1,電阻串110_2包含權重單元W 12~W N2,電阻串110_M包含權重單元W 1M~W NM,以此類推,其中N及M為正整數。在一些實施例中,電阻串110_1~110_M並聯耦接於參考電壓V ref1及參考電壓V ref2之間,且每個電阻串的多個權重單元(例如,電阻串110_1中的權重單元W 11~W N1)串聯耦接於參考電壓V ref1及參考電壓V ref2之間,因此形成了矩陣電路的結構。 The resistor strings 110_1 to 110_M each include a plurality of weight units. For example, the resistor string 110_1 includes weight units W 11 to W N1 , the resistor string 110_2 includes weight units W 12 to W N2 , the resistor string 110_M includes weight units W 1M to W NM , and so on, where N and M are positive integers. In some embodiments, the resistor strings 110_1 to 110_M are coupled in parallel between the reference voltage V ref1 and the reference voltage V ref2 , and the plurality of weight units of each resistor string (e.g., the weight units W 11 to W N1 in the resistor string 110_1) are coupled in series between the reference voltage V ref1 and the reference voltage V ref2 , thereby forming a matrix circuit structure.
在一些實施例中,每個權重單元具有一個狀態值(例如,於二位元模式中的位元0、位元1,或於多位元模式中的位元0、位元1、位元2、…等),此狀態值會決定權重單元的電阻值。例如,狀態值為位元值1的權重單元具有較高的電阻值R
H,而狀態值為位元值0的權重單元具有較低的電阻值R
L。根據每個串聯/並聯的權重單元的電阻值,可以決定矩陣電路的等效電阻值R
eq。
In some embodiments, each weight unit has a state value (e.g.,
此外,每個權重單元用以自控制電路120接收輸入訊號。舉例而言,權重單元W
11~W
N1分別接收輸入訊號IN
11~IN
N1,權重單元W
12~W
N2分別接收輸入訊號IN
12~IN
N2,權重單元W
1M~W
NM分別接收輸入訊號IN
1M~IN
NM,以此類推。每個權重單元所接受的輸入訊號會影響其狀態值,進而影響其電阻值以及矩陣電路的等效電阻值R
eq。
In addition, each weight unit is used to receive an input signal from the
控制電路120耦接至電阻串110_1~110_M中的各個權重單元,用以產生輸入訊號IN
11~IN
N1、IN
12~IN
N2、…、IN
1M~IN
NM(統稱為「IN」)至電阻串110_1~110_M中的各個權重單元。
The
如前文所述,在一些實施例中,矩陣向量運算電路100用以呈現多個權重值。請參照第2圖,第2圖為根據本揭示文件的一些實施例所繪示的矩陣向量運算電路200與權重值的關係的示意圖。應注意,第2圖中的矩陣向量運算電路200相似於第1圖中的矩陣向量運算電路100,因此在此不重複贅述其內部結構。As described above, in some embodiments, the matrix
在一些實施例中,電阻串210_1~210_5中具有相同次序的權重單元會形成一個組合,而此組合會對應同一個權重值(即第1圖中的某一個權重單元所對應的權重值)。舉例而言,在電阻串210_1~210_5中最上方(即最接近參考電壓V ref1)的權重單元W 11_1、W 11_2、W 11_3、W 11_4、W 11_5會形成一組合,此組合對應於第一個權重值(即第1圖中的權重單元W 11所對應的權重值),在電阻串210_1~210_5中第二上方(即第二接近參考電壓V ref1)的權重單元W 21_1、W 21_2、W 21_3、W 21_4、W 21_5會形成另一組合,此組合對應於第二個權重值(即第1圖中的權重單元W 21所對應的權重值),以此類推。 In some embodiments, weight units with the same order in the resistor strings 210_1 - 210_5 form a combination, and the combination corresponds to the same weight value (ie, the weight value corresponding to a certain weight unit in FIG. 1 ). For example, the weight units W 11_1 , W 11_2 , W 11_3 , W 11_4 , and W 11_5 at the top (i.e., closest to the reference voltage V ref1 ) in the resistor string 210_1 to 210_5 form a combination, which corresponds to the first weight value (i.e., the weight value corresponding to the weight unit W 11 in FIG. 1 ), and the weight units W 21_1 , W 21_2 , W 21_3 , W 21_4 , and W 21_5 at the second top (i.e., second closest to the reference voltage V ref1 ) in the resistor string 210_1 to 210_5 form another combination, which corresponds to the second weight value (i.e., the weight value corresponding to the weight unit W 21 in FIG. 1 ), and so on.
此外,每個權重值會決定其對應的權重單元的組合的狀態值。在一些實施例中,權重值可以一元編碼(unary code)陣列來表現,例如,權重值0可以表現為「00000」之陣列,權重值1可以表現為「10000」之陣列,權重值2可以表現為「11000」之陣列,權重值3可以表現為「11100」之陣列,權重值4可以表現為「11110」之陣列,權重值5可以表現為「11111」之陣列。換句話說,每個權重值可以被表現為一陣列,此陣列自最高有效位開始具有連續且對應數量個位元1。In addition, each weight value determines the state value of the combination of weight units to which it corresponds. In some embodiments, the weight value can be represented by a unary code array, for example, a weight value of 0 can be represented by an array of "00000", a weight value of 1 can be represented by an array of "10000", a weight value of 2 can be represented by an array of "11000", a weight value of 3 can be represented by an array of "11100", a weight value of 4 can be represented by an array of "11110", and a weight value of 5 can be represented by an array of "11111". In other words, each weight value can be represented by an array having a continuous and corresponding number of
因此,在權重值以一元編碼陣列表現的實施例中,權重值表現的陣列可以決定其對應的權重單元的組合的狀態值。以第2圖的實施例為例,第一個權重值(即第1圖中的權重單元W 11所對應的權重值)為0,因此權重單元W 11_1~W 11_5的狀態值皆為0;第二個權重值(即第1圖中的權重單元W 21所對應的權重值)為1,因此權重單元W 21_1~W 21_5的狀態值分別為1、0、0、0、0;第三個權重值(即第1圖中的權重單元W 31所對應的權重值)為2,因此權重單元W 31_1~W 31_5的狀態值分別為1、1、0、0、0;第四個權重值(即權重單元W 41所對應的權重值)為3,因此權重單元W 41_1~W 41_5的狀態值分別為1、1、1、0、0;第五個權重值(即權重單元W 51所對應的權重值)為4,因此權重單元W 51_1~W 51_5的狀態值分別為1、1、1、1、0;第六個權重值(即權重單元W 61所對應的權重值)為5,因此權重單元W 61_1~W 61_5的狀態值皆為1。 Therefore, in the embodiment where the weight values are represented by a unary coded array, the array represented by the weight values can determine the state value of the combination of weight units corresponding thereto. Taking the embodiment of FIG. 2 as an example, the first weight value (i.e., the weight value corresponding to the weight unit W11 in FIG. 1) is 0, so the state values of the weight units W11_1 to W11_5 are all 0; the second weight value (i.e., the weight value corresponding to the weight unit W21 in FIG. 1) is 1, so the state values of the weight units W21_1 to W21_5 are 1, 0, 0, 0, 0, respectively; the third weight value (i.e., the weight value corresponding to the weight unit W31 in FIG. 1) is 2, so the state values of the weight units W31_1 to W31_5 are 1, 1, 0, 0, 0, respectively; the fourth weight value (i.e., the weight value corresponding to the weight unit W41 ) is 3, so the state values of the weight units W41_1 to W41_5 are 1, 1, 0, 0, 0, respectively. The state values of weight units W 41_5 are 1, 1, 1, 0, 0 respectively; the fifth weight value (i.e., the weight value corresponding to weight unit W 51 ) is 4, so the state values of weight units W 51_1 ~W 51_5 are 1, 1, 1, 1, 0 respectively; the sixth weight value (i.e., the weight value corresponding to weight unit W 61 ) is 5, so the state values of weight units W 61_1 ~W 61_5 are all 1.
應注意,前文所述的權重單元的狀態值的數量及權重值的編碼方式僅為示例,非用以限制本揭示文件。權重單元的狀態值的其他數量及其他的權重值編碼方式均在本揭示文件的範圍內。在一些實施例中,權重單元可以具有三種以上不同的狀態值。在一些實施例中,權重值可以二進位的陣列表示。It should be noted that the number of state values of the weight unit and the encoding method of the weight value described above are only examples and are not intended to limit this disclosure. Other numbers of state values of the weight unit and other weight value encoding methods are within the scope of this disclosure. In some embodiments, the weight unit can have more than three different state values. In some embodiments, the weight value can be represented by a binary array.
第3A圖為根據一些實例所繪示的矩陣向量運算電路200的狀態值的配置的示意圖。應注意,為了圖式的簡潔起見,第3A~3D圖中的電阻串210_1~210_5及所有權重單元的標示被省略。FIG. 3A is a schematic diagram of the configuration of the state value of the matrix
第3A圖的實例為常見的權重單元的狀態值的配置。詳細而言,每個權重值會被表現為一元編碼陣列,且此一元編碼陣列中自最高有效位(most significant bit,MSB)至最低有效位(least significant bit,LSB)的位元會依序由對應組合中的權重單元的狀態值來表現,且每個權重值的每個一元編碼陣列中的MSB皆由同一個電阻串中的權重單元來表現。The example of FIG. 3A is a common configuration of the state value of the weight unit. In detail, each weight value is represented as a unary coding array, and the bits from the most significant bit (MSB) to the least significant bit (LSB) in the unary coding array are sequentially represented by the state value of the weight unit in the corresponding combination, and the MSB in each unary coding array of each weight value is represented by the weight unit in the same resistor string.
在第3A~3C圖中,位於每組權重單元的組合旁邊的箭頭符號代表一元編碼陣列的MSB至LSB所對應的權重單元的順率。以第3A圖的實例為例,第一個權重值為5,代表的一元編碼陣列為「11111」,因此權重單元W 11_1~W 11_5的狀態值依序為1、1、1、1、1;第三個權重值為2,代表的一元編碼陣列為「11000」,因此權重單元W 31_1~W 31_5的狀態值依序為1、1、0、0、0。換句話說,所有一元編碼陣列中的位元皆依序由電阻串210_1~210_5中的權重單元來表現,因此所有的MSB皆對應於電阻串210_1的權重單元。 In Figures 3A to 3C, the arrows next to each combination of weight units represent the order of weight units corresponding to the MSB to LSB of the unary coding array. Taking the example of Figure 3A as an example, the first weight value is 5, and the unary coding array represented is "11111", so the state values of weight units W 11_1 to W 11_5 are 1, 1, 1, 1, 1 in sequence; the third weight value is 2, and the unary coding array represented is "11000", so the state values of weight units W 31_1 to W 31_5 are 1, 1, 0, 0, 0 in sequence. In other words, all bits in the unary coding array are sequentially represented by the weight units in the resistor strings 210_1 to 210_5, so all MSBs correspond to the weight units of the resistor string 210_1.
如前文所述,根據權重單元的狀態值不同,權重單元會具有較高的電阻值R
H或較低的電阻值R
L。因此,由於一元編碼陣列中的位元1皆集中於較前方的位元的特性,在第3A圖中的電路配置方法中,電阻串210_1~210_5的狀態值總和為11、9、7、3、2,呈現出遞減的現象,導致電阻串210_1~210_5出現電阻值分配不均的問題。如第2圖所示,由於電阻串210_1~210_5彼此並聯於參考電壓V
ref1及參考電壓V
ref2之間,當電阻串210_1~210_5出現電阻值分配不均的現象時,電流會集中到電阻值較小的電阻串(即電阻串210_5),導致電流容易被該電阻串控制(dominate),進而影響整體電路的運作。
As mentioned above, depending on the state value of the weight unit, the weight unit will have a higher resistance value RH or a lower resistance value RL . Therefore, due to the characteristic that the
為了解決上述問題,本揭示文件提供了多種矩陣電路的狀態值的配置方法,請再次參照第1圖,由電阻串110_1~110_M所構成的矩陣電路的等效電阻值R
eq可以透過以下的《公式一》來表示:
《公式一》。
To solve the above problems, the present disclosure provides a variety of configuration methods for the state values of the matrix circuit. Please refer to FIG. 1 again. The equivalent resistance value R eq of the matrix circuit formed by the resistor string 110_1 to 110_M can be expressed by the following "
在《公式一》中,「 」代表所有權重單元的平均電阻值,「 」代表每個電阻串中的具有電阻值R H的權重單元的數量的標準差,「 」代表所有權重單元的平均電阻值除以電阻值R H與電阻值R L之間的差值,而「 」代表每個電阻串中的具有電阻值R H的權重單元的數量與所有電阻串中的具有電阻值R H的權重單元的平均數量的差值。 In Formula One, " represents the average resistance value of all weighted units, " " represents the standard deviation of the number of weighted cells with resistance value RH in each resistor string, " " represents the average resistance value of all weighted cells divided by the difference between the resistance value RH and the resistance value RL , and " " represents the difference between the number of weight units with resistance value RH in each resistor string and the average number of weight units with resistance value RH in all resistor strings.
為了簡化《公式一》的計算,在現今許多矩陣電路的配置方法中,選擇了以增加「
」的方式(例如,透過第3A圖的配置方法)將《公式一》簡化為下列的《公式二》:
《公式二》。
In order to simplify the calculation of "
然而,如前文所述,習知的矩陣電路的配置方法(例如,第3A圖的配置方法)中的電阻串容易出現電阻值分配不均的問題。因此,在本揭示文件中,選擇以減少「
」的方式將《公式一》簡化為《公式二》。透過減少「
」的方式,除了可以簡化《公式一》,還可以改善前述的電阻串的電阻值分配不均的現象。
However, as mentioned above, the resistor string in the known matrix circuit configuration method (for example, the configuration method of FIG. 3A) is prone to uneven resistance distribution. Therefore, in the present disclosure, the selection is made to reduce the " "Simplify "
第3B~3D圖為根據本揭示文件的不同實施例所繪示的矩陣向量運算電路200的狀態值的配置的示意圖。首先,請先參照第3B圖。在第3B圖中,箭頭符號具有兩種方向(由左至右、由右至左)且交替排列。因此,對於第奇數個權重值,其一元編碼陣列中的位元依序由電阻串210_1~210_5中的權重單元來表現;對於第偶數個權重值,其一元編碼陣列中的位元依序由電阻串210_5~210_1中的權重單元來表現。FIG. 3B to FIG. 3D are schematic diagrams of the configuration of the state value of the matrix
換句話說,對應於第奇數個權重值的一元編碼陣列的MSB的權重單元與對應於第偶數個權重值的一元編碼陣列的LSB的權重單元位於相同電阻串中,且對應於第偶數個權重值的一元編碼陣列的MSB的權重單元與對應於第奇數個權重值的一元編碼陣列的LSB的權重單元位於另一相同電阻串中。因此,在與第3A圖相同的權重值的條件下,第3B圖中的電阻串210_1~210_5的狀態值總和為6、6、7、6、7,呈現較平均的分配,進而得到較平均的總電阻值配置以降低《公式一》中的「 」。 In other words, the weight unit corresponding to the MSB of the unary coding array corresponding to the odd-numbered weight value and the weight unit corresponding to the LSB of the unary coding array corresponding to the even-numbered weight value are located in the same resistor string, and the weight unit corresponding to the MSB of the unary coding array corresponding to the even-numbered weight value and the weight unit corresponding to the LSB of the unary coding array corresponding to the odd-numbered weight value are located in another identical resistor string. Therefore, under the condition of the same weight value as FIG. 3A, the sum of the state values of the resistor string 210_1~210_5 in FIG. 3B is 6, 6, 7, 6, 7, showing a more even distribution, thereby obtaining a more even total resistance value configuration to reduce the " ".
接著,請參照第3C圖。在第3C圖中,箭頭符號皆為由左至右。與第3A圖不同的是,第3C圖中的權重值的箭頭符號的起點為前一個權重值的箭頭符號的終點,代表一元編碼陣列的配置方法與第3A圖有所不同。舉例而言,在第3C圖中,第三個權重值為2,對應的一元編碼陣列為「11000」,權重單元W 31_1~W 31_3的狀態值被依序配置為1、1、0,以及權重單元W 31_4、W 31_5的狀態值被配置為0,故此時LSB對應於電阻串210_3;第四個權重值為1,對應的一元編碼陣列為「10000」,此時權重單元的配置會由前一個權重值的一元編碼陣列的LSB所對應的電阻串(即電阻串210_3)開始配置,故權重單元W 41_3、W 41_4的狀態值被依序配置為1、0,以及權重單元W 41_1、W 41_2、W 41_5的狀態值被配置為0,此時LSB對應於電阻串210_4;第五個權重值為3,對應的一元編碼陣列為「11100」,此時權重單元的配置會由前一個權重值的一元編碼陣列的LSB所對應的電阻串(即電阻串210_4)開始配置,故權重單元W 51_4、W 51_5、W 51_1、W 51_2、W 51_3的狀態值被依序配置為1、1、1、0、0,以此類推。 Next, please refer to Figure 3C. In Figure 3C, the arrows are all from left to right. Unlike Figure 3A, the starting point of the arrow of the weight value in Figure 3C is the end point of the arrow of the previous weight value, which means that the configuration method of the unary coding array is different from that of Figure 3A. For example, in FIG. 3C , the third weight value is 2, and the corresponding unary coding array is “11000”. The state values of weight units W 31_1 to W 31_3 are sequentially configured as 1, 1, and 0, and the state values of weight units W 31_4 and W 31_5 are configured as 0, so the LSB corresponds to the resistor string 210_3 at this time; the fourth weight value is 1, and the corresponding unary coding array is “10000”. At this time, the configuration of the weight unit will start from the resistor string (i.e., the resistor string 210_3) corresponding to the LSB of the unary coding array of the previous weight value, so the state values of weight units W 41_3 and W 41_4 are sequentially configured as 1 and 0, and the state values of weight units W 41_1 and W 41_2 are sequentially configured as 1 and 0. , the state value of W 41_5 is configured to 0, and the LSB corresponds to the resistor string 210_4; the fifth weight value is 3, and the corresponding unary coding array is "11100". At this time, the configuration of the weight unit will start from the resistor string corresponding to the LSB of the unary coding array of the previous weight value (that is, the resistor string 210_4), so the state values of the weight units W 51_4 , W 51_5 , W 51_1 , W 51_2 , and W 51_3 are configured to 1, 1, 1, 0, 0 in sequence, and so on.
換句話說,對應於當前的權重值的一元編碼陣列的MSB的權重單元會與對應於前一個權重值的一元編碼陣列的LSB的權重單元位於相同電阻串中。因此,在與第3A圖相同的權重值的條件下,第3C圖中的電阻串210_1~210_5的狀態值總和為7、7、6、6、6,呈現較平均的分配,進而得到較平均的總電阻值配置以降低《公式一》中的「 」。 In other words, the weight unit corresponding to the MSB of the unary coded array of the current weight value is located in the same resistor string as the weight unit corresponding to the LSB of the unary coded array of the previous weight value. Therefore, under the same weight value as FIG. 3A, the sum of the state values of the resistor string 210_1~210_5 in FIG. 3C is 7, 7, 6, 6, 6, showing a more even distribution, thereby obtaining a more even total resistance value configuration to reduce the " ".
最後,請參照第3D圖。在第3D圖中,權重值代表對應組合中的狀態值為1的權重單元的數量,且這些狀態值為1的權重單元在其組合中為隨機分布(因此狀態值為1的權重單元不一定相鄰)。因此,在與第3A圖相同的權重值的條件下,第3D圖中的電阻串210_1~210_5的狀態值總和為7、7、7、6、5,呈現較平均的分配,進而得到較平均的總電阻值配置以降低《公式一》中的「 」。 Finally, please refer to Figure 3D. In Figure 3D, the weight value represents the number of weight units with a state value of 1 in the corresponding combination, and these weight units with a state value of 1 are randomly distributed in their combination (so the weight units with a state value of 1 are not necessarily adjacent). Therefore, under the same weight value as Figure 3A, the sum of the state values of the resistor string 210_1~210_5 in Figure 3D is 7, 7, 7, 6, 5, showing a more even distribution, thereby obtaining a more even total resistance value configuration to reduce the " ".
綜上而言,在第3B~3D圖的狀態值的配置下,所有權重值的一元編碼陣列的MSB位於電阻串210_1~210_5的至少兩者之中,因此得以得到較平均的總電阻值配置(即,具有較低的狀態值總和的標準差,如下表1所示)。
在一些實施例中,矩陣向量運算電路(例如,第1圖中的矩陣向量運算電路100)可以具有多組電阻串,且每組電阻串用於處理一組權重值的配置。因此,此時的權重值可以是一矩陣而非一陣列。此權重值及矩陣向量運算電路的配置被稱為混合模式(mixing-mode)配置。In some embodiments, a matrix vector operation circuit (e.g., the matrix
舉例而言,下表2列出了實例混合模式配置的矩陣向量運算電路的權重值,其中此矩陣向量運算電路具有八組電阻串,每組電阻串對應於32個權重值,且每個權重值介於且包含0至3。此外,下表3列出了表2的權重值在使用第3A~3D圖的配置方法時所得到的配置、平均值及標準差。
從表2、3可以得知,與表1相似地,第3B~3D圖的配置方法所得到的狀態值總和的標準差同樣明顯小於第3A圖的配置方法所得到的標準差。It can be seen from Tables 2 and 3 that, similar to Table 1, the standard deviation of the sum of state values obtained by the configuration method of Figures 3B to 3D is also significantly smaller than the standard deviation obtained by the configuration method of Figure 3A.
第4圖為根據本揭示文件的一些實施例所繪示的根據表2的權重值組合及第3A~3D圖的配置方法所得到的等效電阻值(即量測電阻值)與估算電阻值之間的關係的示意圖。應注意,為了便於說明,第3A~3D圖中的配置方法在第4圖中分別被標示為配置方法1~4。FIG. 4 is a diagram showing the relationship between the equivalent resistance value (i.e., the measured resistance value) and the estimated resistance value obtained according to the weight value combination in Table 2 and the configuration method in FIGS. 3A to 3D according to some embodiments of the present disclosure. It should be noted that for ease of explanation, the configuration methods in FIGS. 3A to 3D are respectively labeled as
當量測電阻值與估算電阻值越接近相等(即,在圖式中的分布越接近斜率為1的直線)時,代表該配置方法所得到的線性度越佳。因此,從第4圖可以得知,第3B~3D圖的配置方法所得到的線性度明顯優於第3A圖的配置方法所得到的線性度。When the measured resistance value is closer to the estimated resistance value (i.e., the distribution in the graph is closer to a straight line with a slope of 1), the linearity obtained by the configuration method is better. Therefore, from Figure 4, it can be seen that the linearity obtained by the configuration method of Figures 3B to 3D is significantly better than the linearity obtained by the configuration method of Figure 3A.
第5圖為根據本揭示文件的一些實施例所繪示的矩陣向量運算電路500的示意圖。矩陣向量運算電路500相似於第1圖中的矩陣向量運算電路100。差異之處在於,矩陣向量運算電路500的電阻串510_1~510_M中各自更包含了一個額外電阻R
S。額外電阻R
S串聯耦接於該電阻串的多個權重單元及參考電壓V
ref2之間,用以防止電阻串發生快速充電行為。
FIG. 5 is a schematic diagram of a matrix
在一些實施例中,為了使額外電阻R S正常發揮防止快速充電的作用,額外電阻R S的電阻值會被設置為電阻值較高的權重單元(例如,狀態值為1,具有電阻值R H的權重單元)的一倍或數倍,故額外電阻R S的電阻值約等於或大於該電阻串中的每個權重單元的電阻值。 In some embodiments, in order for the additional resistor R S to properly play the role of preventing fast charging, the resistance value of the additional resistor R S is set to one or more times the resistance value of the weight unit with a higher resistance value (for example, a weight unit with a state value of 1 and a resistance value of RH ), so the resistance value of the additional resistor R S is approximately equal to or greater than the resistance value of each weight unit in the resistor string.
在一些實施例中,每個權重單元具有多位元模式中的狀態值,例如位元0、位元1、位元2、…等,此狀態值會決定權重單元的電阻值為R
L、R
H1、R
H2、…等。額外電阻R
S的電阻值會被設置為電阻值較高的權重單元的電阻值,例如R
H1、R
H2、…等。故額外電阻R
S的電阻值約等於或大於該電阻串中的權重單元的電阻值。
In some embodiments, each weight unit has a state value in a multi-bit mode, such as
第6圖為根據本揭示文件的一些實施例所繪示的電路配置方法600的流程圖。電路配置方法600用以配置矩陣向量運算電路(例如,矩陣向量運算電路100、200、500)中的多個權重單元的狀態值。在一些實施例中,電路配置方法600包含步驟S610、S620、S630、S640。FIG. 6 is a flow chart of a
在步驟S610中,藉由控制電路(例如,控制電路120)設定矩陣向量運算電路的多個權重值。接著,執行步驟S620。In step S610, a plurality of weight values of the matrix vector operation circuit are set by a control circuit (eg, control circuit 120). Then, step S620 is executed.
在步驟S620中,藉由控制電路根據在步驟S610中設定的多個權重值決定多個狀態值的序列(例如,第2圖中的狀態值所對應的一元編碼陣列)。這些序列分別對應於每個權重值。接著,執行步驟S630。In step S620, the control circuit determines a sequence of multiple state values (for example, the unary encoding array corresponding to the state values in FIG. 2) according to the multiple weight values set in step S610. These sequences correspond to each weight value respectively. Then, step S630 is executed.
在步驟S630中,藉由控制電路基於多個序列設置每個權重單元的狀態值(例如,使用第3B~3D圖中的狀態值的配置)。接著,執行步驟S640。In step S630, the state value of each weight unit is set based on multiple sequences by the control circuit (for example, using the configuration of the state value in Figures 3B to 3D). Then, step S640 is executed.
在步驟S640中,在多個電阻串中分別設置一額外電阻,以防止電阻串發生快速充電行為,並藉由控制電路設定額外電阻的電阻值。In step S640, an additional resistor is respectively set in the plurality of resistor strings to prevent the resistor strings from being rapidly charged, and the resistance value of the additional resistor is set by a control circuit.
應注意,本揭示文件的電路配置方法600中的步驟的數量及順序僅為示例,非用以限制本揭示文件,其他步驟的數量及順序均在本揭示文件的範圍內。在一些實施例中,步驟S640可以在步驟S630之前執行。在一些實施例中,步驟S640可以被省略。It should be noted that the number and order of steps in the
透過本揭示文件的矩陣向量運算電路100、200、500及電路配置方法600,可以降低電阻串之間電阻值的差異,進而提升矩陣向量運算電路的輸出的線性度。此外,電阻串中的額外電阻也能防止電阻串發生快速充電行為,以改善矩陣向量運算電路的表現。Through the matrix
以上僅為本揭示文件的較佳實施例,在不脫離本揭示文件的範圍或精神的情況下,本揭示文件的結構可以進行各種修飾和均等變化。綜上所述,凡在以下請求項的範圍內對於本揭示文件所做的修飾以及均等變化,皆為本揭示文件所涵蓋的範圍。The above is only the preferred embodiment of the present disclosure. Without departing from the scope or spirit of the present disclosure, the structure of the present disclosure can be modified and equivalently changed in various ways. In summary, all modifications and equivalent changes made to the present disclosure within the scope of the following claims are within the scope of the present disclosure.
100:矩陣向量運算電路 110_1,110_2,110_M:電阻串 120:控制電路 200:矩陣向量運算電路 210_1~210_5:電阻串 500:矩陣向量運算電路 510_1,510_2,510_M:電阻串 600:電路配置方法 S610,S620,S630,S640:步驟 IN:輸入訊號 IN 11,IN 12,IN 1M:輸入訊號 IN 21,IN 22,IN 2M:輸入訊號 IN 31,IN 32,IN 3M:輸入訊號 IN N1,IN N2,IN NM:輸入訊號 W 11,W 12,W 1M:權重單元 W 21,W 22,W 2M:權重單元 W 31,W 32,W 3M:權重單元 W 41,W 51,W 61:權重單元 W N1,W N2,W NM:權重單元 W 11_1~W 11_5:權重單元 W 21_1~W 21_5:權重單元 W 31_1~W 31_5:權重單元 W 41_1~W 41_5:權重單元 W 51_1~W 51_5:權重單元 W 61_1~W 61_5:權重單元 V ref1,V ref2:參考電壓 R eq:等效電阻值 R S:額外電阻100: Matrix vector operation circuit 110_1, 110_2, 110_M: resistor string 120: control circuit 200: Matrix vector operation circuit 210_1~210_5: resistor string 500: Matrix vector operation circuit 510_1, 510_2, 510_M: resistor string 600: circuit configuration method S610, S620, S630, S640: step IN: input signal IN 11 , IN 12 , IN 1M : input signal IN 21 , IN 22 , IN 2M : input signal IN 31 , IN 32 , IN 3M : input signal IN N1 , IN N2 , IN NM : input signal W 11 , W 12 , W 1M : Weight unit W 21, W 22 , W 2M : Weight unit W 31, W 32 , W 3M : Weight unit W 41, W 51 , W 61 : Weight unit W N1 , W N2 , W NM : Weight unit W 11_1 ~ W 11_5 : Weight unit W 21_1 ~ W 21_5 : Weight unit W 31_1 ~ W 31_5 : Weight unit W 41_1 ~ W 41_5 : Weight unit W 51_1 ~ W 51_5 : Weight unit W 61_1 ~ W 61_5 : Weight unit V ref1 , V ref2 : Reference voltage R eq : Equivalent resistance R S : Additional resistance
為使本揭示文件之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下: 第1圖為根據本揭示文件的一些實施例所繪示的矩陣向量運算電路的示意圖; 第2圖為根據本揭示文件的一些實施例所繪示的矩陣向量運算電路與權重值的關係的示意圖; 第3A圖為根據一些實例所繪示的矩陣向量運算電路的狀態值的配置的示意圖; 第3B圖為根據本揭示文件的一些實施例所繪示的矩陣向量運算電路的狀態值的配置的示意圖; 第3C圖為根據本揭示文件的一些實施例所繪示的矩陣向量運算電路的狀態值的配置的示意圖; 第3D圖為根據本揭示文件的一些實施例所繪示的矩陣向量運算電路的狀態值的配置的示意圖; 第4圖為根據本揭示文件的一些實施例所繪示的根據多個配置方法的等效電阻值與估算電阻值之間的關係的示意圖; 第5圖為根據本揭示文件的一些實施例所繪示的矩陣向量運算電路的示意圖;以及 第6圖為根據本揭示文件的一些實施例所繪示的電路配置方法的流程圖。 In order to make the above and other purposes, features, advantages and embodiments of the present disclosure document more clearly understandable, the attached drawings are described as follows: Figure 1 is a schematic diagram of a matrix vector operation circuit drawn according to some embodiments of the present disclosure document; Figure 2 is a schematic diagram of the relationship between a matrix vector operation circuit and a weight value drawn according to some embodiments of the present disclosure document; Figure 3A is a schematic diagram of the configuration of the state value of the matrix vector operation circuit drawn according to some examples; Figure 3B is a schematic diagram of the configuration of the state value of the matrix vector operation circuit drawn according to some embodiments of the present disclosure document; Figure 3C is a schematic diagram of the configuration of the state value of the matrix vector operation circuit drawn according to some embodiments of the present disclosure document; FIG. 3D is a schematic diagram of the configuration of the state value of the matrix vector operation circuit according to some embodiments of the present disclosure document; FIG. 4 is a schematic diagram of the relationship between the equivalent resistance value and the estimated resistance value according to multiple configuration methods according to some embodiments of the present disclosure document; FIG. 5 is a schematic diagram of the matrix vector operation circuit according to some embodiments of the present disclosure document; and FIG. 6 is a flow chart of the circuit configuration method according to some embodiments of the present disclosure document.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None
100:矩陣向量運算電路 100: Matrix vector operation circuit
110_1,110_2,110_M:電阻串 110_1,110_2,110_M: resistor string
120:控制電路 120: Control circuit
IN:輸入訊號 IN: Input signal
IN11,IN12,IN1M:輸入訊號 IN 11 , IN 12 , IN 1M : Input signal
IN21,IN22,IN2M:輸入訊號 IN 21 , IN 22 , IN 2M : Input signal
IN31,IN32,IN3M:輸入訊號 IN 31 , IN 32 , IN 3M : Input signal
INN1,INN2,INNM:輸入訊號 IN N1 , IN N2 , IN NM : Input signal
W11,W12,W1M:權重單元 W 11 ,W 12 ,W 1M : weight unit
W21,W22,W2M:權重單元 W 21, W 22 , W 2M : weight unit
W31,W32,W3M:權重單元 W 31, W 32 , W 3M : weight unit
WN1,WN2,WNM:權重單元 W N1 ,W N2 ,W NM : weight unit
Vref1,Vref2:參考電壓 V ref1 ,V ref2 : reference voltage
Req:等效電阻值 R eq : equivalent resistance
Claims (20)
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| CN108763163B (en) * | 2018-08-02 | 2023-10-20 | 北京知存科技有限公司 | Analog vector-matrix multiplication circuit |
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