TWI862835B - Intermittent plating method - Google Patents
Intermittent plating method Download PDFInfo
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- TWI862835B TWI862835B TW110117559A TW110117559A TWI862835B TW I862835 B TWI862835 B TW I862835B TW 110117559 A TW110117559 A TW 110117559A TW 110117559 A TW110117559 A TW 110117559A TW I862835 B TWI862835 B TW I862835B
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- Prior art keywords
- intermittent
- plating
- electroplating method
- plating solution
- aforementioned
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- 238000007747 plating Methods 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000009713 electroplating Methods 0.000 claims abstract description 52
- 238000011049 filling Methods 0.000 claims abstract description 29
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 claims description 39
- 239000011248 coating agent Substances 0.000 claims description 38
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 54
- 239000010949 copper Substances 0.000 description 18
- 238000012360 testing method Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 150000002736 metal compounds Chemical class 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 5
- -1 copper fluoroborate Chemical compound 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 239000005749 Copper compound Substances 0.000 description 4
- 150000001880 copper compounds Chemical group 0.000 description 4
- 229910000358 iron sulfate Inorganic materials 0.000 description 4
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- FRHBOQMZUOWXQL-UHFFFAOYSA-L ammonium ferric citrate Chemical compound [NH4+].[Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O FRHBOQMZUOWXQL-UHFFFAOYSA-L 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 235000000011 iron ammonium citrate Nutrition 0.000 description 3
- 239000004313 iron ammonium citrate Substances 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- PAJMKGZZBBTTOY-UHFFFAOYSA-N 2-[[2-hydroxy-1-(3-hydroxyoctyl)-2,3,3a,4,9,9a-hexahydro-1h-cyclopenta[g]naphthalen-5-yl]oxy]acetic acid Chemical compound C1=CC=C(OCC(O)=O)C2=C1CC1C(CCC(O)CCCCC)C(O)CC1C2 PAJMKGZZBBTTOY-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- ZUEYPVKINKUKCB-UHFFFAOYSA-K azanium iron(3+) disulfate hydrate Chemical compound O.[NH4+].S(=O)(=O)([O-])[O-].[Fe+3].S(=O)(=O)([O-])[O-] ZUEYPVKINKUKCB-UHFFFAOYSA-K 0.000 description 2
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 2
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- AJVRSHNXSHMMCH-UHFFFAOYSA-K iron(III) citrate monohydrate Chemical compound O.[Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O AJVRSHNXSHMMCH-UHFFFAOYSA-K 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- GYCHYNMREWYSKH-UHFFFAOYSA-L iron(ii) bromide Chemical compound [Fe+2].[Br-].[Br-] GYCHYNMREWYSKH-UHFFFAOYSA-L 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004690 nonahydrates Chemical class 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- CMZUMMUJMWNLFH-UHFFFAOYSA-N sodium metavanadate Chemical compound [Na+].[O-][V](=O)=O CMZUMMUJMWNLFH-UHFFFAOYSA-N 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 229910021576 Iron(III) bromide Inorganic materials 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- VZVHUBYZGAUXLX-UHFFFAOYSA-N azane;azanide;cobalt(3+) Chemical compound N.N.N.[NH2-].[NH2-].[NH2-].[Co+3] VZVHUBYZGAUXLX-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- OIDPCXKPHYRNKH-UHFFFAOYSA-J chrome alum Chemical compound [K]OS(=O)(=O)O[Cr]1OS(=O)(=O)O1 OIDPCXKPHYRNKH-UHFFFAOYSA-J 0.000 description 1
- WYYQVWLEPYFFLP-UHFFFAOYSA-K chromium(3+);triacetate Chemical compound [Cr+3].CC([O-])=O.CC([O-])=O.CC([O-])=O WYYQVWLEPYFFLP-UHFFFAOYSA-K 0.000 description 1
- KVIYQADEXNCDCB-UHFFFAOYSA-H chromium(3+);trisulfate;hydrate Chemical compound O.[Cr+3].[Cr+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O KVIYQADEXNCDCB-UHFFFAOYSA-H 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229940116318 copper carbonate Drugs 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 150000004683 dihydrates Chemical class 0.000 description 1
- VCSZKSHWUBFOOE-UHFFFAOYSA-N dioxidanium;sulfate Chemical compound O.O.OS(O)(=O)=O VCSZKSHWUBFOOE-UHFFFAOYSA-N 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- AAQNGTNRWPXMPB-UHFFFAOYSA-N dipotassium;dioxido(dioxo)tungsten Chemical compound [K+].[K+].[O-][W]([O-])(=O)=O AAQNGTNRWPXMPB-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- IMBKASBLAKCLEM-UHFFFAOYSA-L ferrous ammonium sulfate (anhydrous) Chemical compound [NH4+].[NH4+].[Fe+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O IMBKASBLAKCLEM-UHFFFAOYSA-L 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- VXWSFRMTBJZULV-UHFFFAOYSA-H iron(3+) sulfate hydrate Chemical compound O.[Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O VXWSFRMTBJZULV-UHFFFAOYSA-H 0.000 description 1
- SZQUEWJRBJDHSM-UHFFFAOYSA-N iron(3+);trinitrate;nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O SZQUEWJRBJDHSM-UHFFFAOYSA-N 0.000 description 1
- NPFOYSMITVOQOS-UHFFFAOYSA-K iron(III) citrate Chemical compound [Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NPFOYSMITVOQOS-UHFFFAOYSA-K 0.000 description 1
- NMHMDUCCVHOJQI-UHFFFAOYSA-N lithium molybdate Chemical compound [Li+].[Li+].[O-][Mo]([O-])(=O)=O NMHMDUCCVHOJQI-UHFFFAOYSA-N 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 description 1
- FWFGVMYFCODZRD-UHFFFAOYSA-N oxidanium;hydrogen sulfate Chemical compound O.OS(O)(=O)=O FWFGVMYFCODZRD-UHFFFAOYSA-N 0.000 description 1
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000015393 sodium molybdate Nutrition 0.000 description 1
- 239000011684 sodium molybdate Substances 0.000 description 1
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- FZUJWWOKDIGOKH-UHFFFAOYSA-N sulfuric acid hydrochloride Chemical compound Cl.OS(O)(=O)=O FZUJWWOKDIGOKH-UHFFFAOYSA-N 0.000 description 1
- 150000004685 tetrahydrates Chemical class 0.000 description 1
- 229910000349 titanium oxysulfate Inorganic materials 0.000 description 1
- FEONEKOZSGPOFN-UHFFFAOYSA-K tribromoiron Chemical compound Br[Fe](Br)Br FEONEKOZSGPOFN-UHFFFAOYSA-K 0.000 description 1
- 150000004684 trihydrates Chemical class 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
本發明提供一種能提升間歇電鍍時微小孔之填充性之技術。 一種間歇電鍍方法,係對具有微小孔的被鍍敷物進行,該間歇電鍍方法包括使用含有多價金屬離子的鍍敷液。The present invention provides a technology that can improve the filling property of micropores during intermittent electroplating. An intermittent electroplating method is performed on a plated object having micropores, and the intermittent electroplating method includes using a plating solution containing multivalent metal ions.
Description
發明領域 本發明是有關於間歇電鍍方法等。Field of the invention The present invention relates to an intermittent electroplating method, etc.
背景技術 近年來,隨著電子儀器的高機能化、高速化,印刷配線板中亦要求高密度化。為了印刷配線板之高密度化,增層法製程是不可或缺的,其中,導孔填充屬於重要之鍍敷技術。此種增層法製程中,以往是在非貫通的導孔施以均勻之鍍敷,然後填充絕緣樹脂或導電性糊並形成電路,然而,該工法無法於導孔上形成導孔,會剝奪電路設計之自由度。故,近年來採用的工法是進行利用鍍敷填充通孔內的導孔填充,並堆疊配線層。Background technology In recent years, with the high functionality and high speed of electronic equipment, high density is also required in printed wiring boards. In order to achieve high density of printed wiring boards, the build-up process is indispensable, among which via filling is an important plating technology. In this build-up process, in the past, a uniform plating was applied to non-through vias, and then an insulating resin or conductive paste was filled to form a circuit. However, this method cannot form vias on vias, which will deprive the freedom of circuit design. Therefore, the method adopted in recent years is to use plating to fill the vias in the through holes and stack the wiring layers.
另一方面,從電鍍製程之效率化之觀點、尤其是從有效率地電鍍長條狀被鍍敷物之觀點來看,有時會採用間歇電鍍法。該間歇鍍敷法是在例如像是圖1所示的捲盤至捲盤之作業線上使用複數個鍍敷槽來進行。On the other hand, from the perspective of increasing the efficiency of the electroplating process, especially from the perspective of efficiently electroplating long strips of the article to be plated, intermittent electroplating is sometimes used. The intermittent plating method is performed using a plurality of plating tanks in a reel-to-reel process line such as shown in FIG. 1 .
先前技術文獻 專利文獻 專利文獻1:日本特開2011-058093號公報Prior art documents Patent documents Patent document 1: Japanese Patent Publication No. 2011-058093
發明概要 發明欲解決之課題 本案發明人進行研究時發現,對具有通孔等微小孔的被鍍敷物進行間歇電鍍時,金屬在該微小孔中之析出程度(填充性)會明顯降低。Summary of the invention Problems to be solved by the invention During research, the inventors of this case found that when intermittent electroplating is performed on a substrate having micro-holes such as through holes, the degree of metal precipitation (filling property) in the micro-holes will be significantly reduced.
故,本發明之課題在提供一種能提升間歇電鍍時微小孔之填充性之技術。Therefore, the subject of the present invention is to provide a technology that can improve the filling property of micro-holes during intermittent electroplating.
用以解決課題之手段 本案發明人進一步地進行研究時發現,間歇電鍍時填充性之降低是起因於間歇鍍敷法特有的現象,即,些微附著於自鍍敷槽排出的被鍍敷物及供給至鍍敷槽的被鍍敷物上之鍍敷液(若以圖1所示實施形態來說,則為自鍍敷槽側面稍微漏出的鍍敷液)導致低電流密度的產生這個問題。又,本案發明人再進行研究時發現,藉由使用含有多價金屬離子的鍍敷液,可解決上述課題。本案發明人根據該等見解進一步地進行研究,結果完成了本發明。Means for solving the problem The inventors of this case found that the reduction of filling property during intermittent electroplating is caused by a phenomenon unique to the intermittent plating method, that is, the plating liquid slightly attached to the coated material discharged from the plating tank and the coated material supplied to the plating tank (in the case of the embodiment shown in FIG. 1, it is the plating liquid slightly leaking from the side of the plating tank) resulting in the problem of low current density. In addition, the inventors of this case found that the above-mentioned problem can be solved by using a plating liquid containing polyvalent metal ions. The inventors of this case further conducted research based on these insights and completed the present invention.
即,本發明包含下述態樣。That is, the present invention includes the following aspects.
項1.一種間歇電鍍方法,係對具有微小孔的被鍍敷物進行,該間歇電鍍方法包括使用含有多價金屬離子的鍍敷液。Item 1. An intermittent electroplating method is performed on a substrate having micropores, the intermittent electroplating method comprising using a plating solution containing polyvalent metal ions.
項2.如項1之間歇電鍍方法,其中前述多價金屬離子之價數為3以上。Item 2. The intermittent electroplating method of Item 1, wherein the valence of the aforementioned polyvalent metal ions is 3 or more.
項3.如項1或2之間歇電鍍方法,其中前述多價金屬離子為選自於由Fe3+ 、V5+ 、Mn7+ 、Mo6+ 、W6+ 、Ce4+ 、Cr3+ 、Cr6+ 、Ti4+ 、Sn4+ 及Co3+ 所構成群組中之至少1種。Item 3. An intermittent plating method as in Item 1 or 2, wherein the aforementioned polyvalent metal ions are at least one selected from the group consisting of Fe 3+ , V 5+ , Mn 7+ , Mo 6+ , W 6+ , Ce 4+ , Cr 3+ , Cr 6+ , Ti 4+ , Sn 4+ and Co 3+ .
項4.如項1至3中任一項之間歇電鍍方法,其中前述多價金屬離子為選自於由Fe3+ 及V5+ 所構成群組中之至少1種。Item 4. The intermittent plating method of any one of items 1 to 3, wherein the aforementioned polyvalent metal ions are at least one selected from the group consisting of Fe 3+ and V 5+ .
項5.如項1至4中任一項之間歇電鍍方法,其係長條狀被鍍敷物於作業線上以連續方式供給至鍍敷槽,並且反覆複數次自鍍敷槽排出被鍍敷物與朝鍍敷槽供給被鍍敷物。Item 5. An intermittent electroplating method as in any one of items 1 to 4, wherein a long strip of the object to be coated is continuously supplied to a coating tank on an operation line, and the object to be coated is repeatedly discharged from the coating tank and supplied to the coating tank.
項6.如項5之間歇電鍍方法,其中前述被鍍敷物通過複數個鍍敷槽。Item 6. The intermittent electroplating method of Item 5, wherein the object to be plated passes through a plurality of plating tanks.
項7.如項5或6之間歇電鍍方法,其中前述排出及前述供給係於鍍敷槽之側面進行。Item 7. An intermittent electroplating method as described in Item 5 or 6, wherein the aforementioned discharge and the aforementioned supply are carried out on the side of the plating tank.
項8.如項5至7中任一項之間歇電鍍方法,其係於捲盤至捲盤之作業線上進行。Item 8. An intermittent electroplating method as described in any one of Items 5 to 7, which is carried out on a reel-to-reel operation line.
項9.如項1至8中任一項之間歇電鍍方法,其中前述微小孔為微導孔。Item 9. An intermittent electroplating method as described in any one of Items 1 to 8, wherein the aforementioned micro-holes are micro-conducting holes.
項10.如項1至9中任一項之間歇電鍍方法,其中析出至被鍍敷物上的金屬包含選自於由Cu、Ni及Sn所構成群組中之至少1種。Item 10. An intermittent electroplating method as described in any one of Items 1 to 9, wherein the metal deposited onto the plated object comprises at least one selected from the group consisting of Cu, Ni and Sn.
項11.如項1至10中任一項之間歇電鍍方法,其中前述鍍敷液更含有導孔填充用添加劑。Item 11. The intermittent electroplating method according to any one of items 1 to 10, wherein the plating solution further contains an additive for via filling.
項12.一種鍍敷液,係用以運用在如項1至11中任一項之間歇電鍍方法,該鍍敷液含有多價金屬離子。Item 12. A plating solution for use in a discontinuous electroplating method as described in any one of Items 1 to 11, wherein the plating solution contains polyvalent metal ions.
項13.一種間歇電鍍方法,係對具有微小孔之被鍍敷物進行; 該方法包括使用含有多價金屬離子及銅離子之銅鍍敷液; 並且包括: 長條狀被鍍敷物於作業線上以連續方式供給至鍍敷槽,且反覆複數次自鍍敷槽排出被鍍敷物與朝鍍敷槽供給被鍍敷物; 且於捲盤至捲盤之作業線上進行; 且在鍍敷槽間產生低電流密度的條件下進行; 且填充微小孔。Item 13. An intermittent electroplating method is performed on a substrate having micropores; The method includes using a copper plating solution containing polyvalent metal ions and copper ions; And includes: The long strip of substrate is continuously supplied to the plating tank on the operation line, and the substrate is repeatedly discharged from the plating tank and supplied to the plating tank; And it is performed on the reel-to-reel operation line; And it is performed under conditions that generate low current density between the plating tanks; And the micropores are filled.
發明效果 依據本發明,可提供一種能提升間歇電鍍時微小孔之填充性之技術,具體而言為間歇電鍍方法、微小孔之填充方法、鍍敷液等。Effect of the invention According to the present invention, a technology can be provided that can improve the filling property of micro-holes during intermittent plating, specifically, an intermittent plating method, a micro-hole filling method, a plating solution, etc.
用以實施發明之形態 本說明書中,針對「含有」及「包含」之表現,是包括「含有」、「包含」、「實質上由此構成」以及「僅由此構成」這些概念。Forms for implementing the invention In this specification, the expressions "contain" and "include" include the concepts of "contain", "include", "substantially constituted by", and "consisting only of".
本發明於其一態樣中,是關於一種對具有微小孔的被鍍敷物之間歇電鍍方法(本說明書中,有時亦顯示為「本發明之間歇電鍍方法」),其包括使用含有多價金屬離子的鍍敷液。The present invention, in one aspect, relates to a method for intermittent electroplating of an object having micropores (sometimes referred to as "the intermittent electroplating method of the present invention" in this specification), which includes using a plating solution containing polyvalent metal ions.
又,本發明於其一態樣中,是關於一種用以運用在本發明之間歇電鍍方法之鍍敷液,其含有多價金屬離子。Furthermore, in one aspect, the present invention relates to a plating solution for use in the intermittent electroplating method of the present invention, which contains polyvalent metal ions.
再者,本發明是關於一種利用對具有微小孔的被鍍敷物間歇電鍍來進行之微小孔填充(導孔填充)方法,該方法包括使用含有多價金屬離子的鍍敷液。Furthermore, the present invention relates to a method for filling micro-holes (via filling) by intermittent electroplating on a substrate having micro-holes, the method comprising using a plating solution containing polyvalent metal ions.
以下,針對該等進行說明。The following is an explanation of these.
多價金屬離子只要是價數為2以上的金屬離子,則無特殊限制。The polyvalent metal ions are not particularly limited as long as they are metal ions having a valence of 2 or more.
多價金屬離子之價數宜為3以上。藉由使用價數為3以上的多價金屬離子,可大幅地提升微小孔之填充性。多價金屬離子之價數上限並無特殊限制,例如為7、6、5、4。The valence of the polyvalent metal ion is preferably 3 or more. By using the polyvalent metal ion with a valence of 3 or more, the filling property of the micropores can be greatly improved. The upper limit of the valence of the polyvalent metal ion is not particularly limited, and is, for example, 7, 6, 5, or 4.
多價金屬離子之具體例可列舉如:Fe3+ 、V5+ 、Mn7+ 、Mo6+ 、W6+ 、Ce4+ 、Cr3+ 、Cr6+ 、Ti4+ 、Sn4+ 、Co3+ 等。該等之中,從微小孔之填充性之觀點來看,宜舉例Fe3+ 、V5+ 、Mn7+ 、Mo6+ 、W6+ 、Ce4+ 、Cr3+ 等。其中,從微小孔之填充性之觀點來看,尤其宜為Fe3+ 及V5+ ,且以Fe3+ 尤佳。Specific examples of polyvalent metal ions include Fe 3+ , V 5+ , Mn 7+ , Mo 6+ , W 6+ , Ce 4+ , Cr 3+ , Cr 6+ , Ti 4+ , Sn 4+ , Co 3+ , etc. Among them, from the perspective of micropore filling, Fe 3+ , V 5+ , Mn 7+ , Mo 6+ , W 6+ , Ce 4+ , Cr 3+ , etc. are preferred. Among them, from the perspective of micropore filling, Fe 3+ and V 5+ are particularly preferred, and Fe 3+ is particularly preferred.
多價金屬離子可為單獨1種,亦可為2種以上的組合。The polyvalent metal ions may be present alone or in combination of two or more.
含有多價金屬離子的鍍敷液可藉由在調製鍍敷液時添加金屬化合物而製得。作為所使用的金屬化合物,舉例言之,在製得含有Fe3+ 之鍍敷液之情形時,例如可列舉硫酸鐵(III)水合物.無水物、硝酸鐵(III)九水合物、無水溴化鐵(III)、檸檬酸鐵銨、檸檬酸鐵(III)水合物、氧化鐵(III)、硫酸銨鐵(III)水合物等;在製得含有V5+ 之鍍敷液之情形時,例如可列舉偏釩酸鈉、偏釩酸鉀、偏釩酸銨等;在製得含有Mn7+ 之鍍敷液之情形時,例如可列舉過錳酸鉀、過錳酸鈉等;在製得含有Mo6+ 之鍍敷液之情形時,例如可列舉鉬酸鈉、鉬酸鉀、鉬酸鋰、七鉬酸六銨四水合物等;在製得含有W6+ 之鍍敷液之情形時,例如可列舉鎢(IV)酸鈉二水合物、偏鎢酸鈉、鎢酸鉀等;在製得含有Ce4+ 之鍍敷液之情形時,例如可列舉硝酸鈰(IV)銨、硫酸鈰(IV)水合物.無水物、硫酸四銨鈰(IV)二水合物等;在製得含有Cr3+ 之鍍敷液之情形時,例如可列舉硫酸鉻水合物.無水物、醋酸鉻、硫酸鉻鉀等;在製得含有Cr6+ 之鍍敷液之情形時,例如可列舉重鉻酸鈉、重鉻酸鉀等;在製得含有Ti4+ 之鍍敷液之情形時,例如可列舉硫酸氧鈦等;在製得含有Sn4+ 之鍍敷液之情形時,例如可列舉錫酸鈉三水合物等;在製得含有Co3+ 之鍍敷液之情形時,例如可列舉氯化六氨鈷(III)等。A plating solution containing polyvalent metal ions can be prepared by adding a metal compound when preparing the plating solution. For example, when preparing a plating solution containing Fe 3+ , iron sulfate (III) hydrate can be cited as the metal compound used. anhydrous, iron nitrate (III) nonahydrate, anhydrous iron bromide (III), ammonium ferric citrate, iron (III) citrate hydrate, iron (III) oxide, ammonium iron (III) sulfate hydrate, etc.; in the case of preparing a plating solution containing V 5+ , for example, sodium metavanadate, potassium metavanadate, ammonium metavanadate, etc. can be listed; in the case of preparing a plating solution containing Mn 7+ , for example, potassium permanganate, sodium permanganate, etc. can be listed; in the case of preparing a plating solution containing Mo 6+ , for example, sodium molybdate, potassium molybdate, lithium molybdate, hexaammonium heptamolybdate tetrahydrate, etc. can be listed; in the case of preparing a plating solution containing W In the case of preparing a plating solution containing Ce 6+, for example, sodium tungstate (IV) dihydrate, sodium metatungstate, potassium tungstate, etc. can be listed; in the case of preparing a plating solution containing Ce 4+ , for example, ammonium tungstate (IV) nitrate, ammonium tungstate (IV) sulfate hydrate anhydrate, tetraammonium tungstate (IV) sulfate dihydrate, etc. can be listed; in the case of preparing a plating solution containing Cr 3+ , for example, chromium sulfate hydrate can be listed. anhydrous, chromium acetate, potassium chromium sulfate, etc.; when preparing a plating solution containing Cr 6+ , for example, sodium dichromate, potassium dichromate, etc. can be listed; when preparing a plating solution containing Ti 4+ , for example, titanium oxysulfate, etc. can be listed; when preparing a plating solution containing Sn 4+ , for example, sodium tinate trihydrate, etc. can be listed; when preparing a plating solution containing Co 3+ , for example, hexaamminecobalt (III) chloride, etc. can be listed.
該等金屬化合物中,從微小孔之填充性之觀點來看,尤其宜列舉如:硫酸鐵(III)水合物.無水物、硝酸鐵(III)九水合物、無水溴化鐵(III)、檸檬酸鐵銨、檸檬酸鐵(III)水合物、氧化鐵(III)、硫酸銨鐵(III)水合物、偏釩酸鈉、偏釩酸鉀、偏釩酸銨等,再者,尤其宜列舉如:硫酸鐵(III)水合物.無水物、硝酸鐵(III)九水合物、無水溴化鐵(III)、檸檬酸鐵銨、檸檬酸鐵(III)水合物、氧化鐵(III)、硫酸銨鐵(III)水合物等,特別理想的可舉例硫酸鐵(III)水合物.無水物。Among these metal compounds, from the viewpoint of micropore filling property, iron sulfate (III) hydrate, anhydrous, iron nitrate (III) nonahydrate, anhydrous iron bromide (III), ammonium ferric citrate, iron citrate (III) hydrate, iron oxide (III), ammonium iron sulfate (III) hydrate, sodium metavanadate, potassium metavanadate, ammonium metavanadate, etc. are particularly suitable. Furthermore, iron sulfate (III) hydrate is particularly suitable. Anhydrous iron (III) nitrate, iron (III) nitrate nonahydrate, anhydrous iron (III) bromide, ammonium ferric citrate, iron (III) citrate hydrate, iron (III) oxide, ammonium iron (III) sulfate hydrate, etc., and particularly preferred is iron (III) sulfate hydrate. Anhydrous.
鍍敷液中所含多價金屬離子,亦可為在添加金屬化合物(上述金屬化合物或其以外的金屬化合物)後於鍍敷液中價數改變者。The polyvalent metal ions contained in the plating solution may have their valence changed in the plating solution after the addition of a metal compound (the above metal compound or a metal compound other than the above metal compound).
金屬化合物可為單獨1種,亦可為2種以上的組合。The metal compound may be a single type or a combination of two or more types.
鍍敷液中多價金屬離子之濃度並無特殊限制,例如為0.01~20g/L。從微小孔之填充性之觀點來看,該濃度宜為0.05~10g/L,較佳為0.1~5g/L,更佳為0.2~3g/L,再更佳為0.5~3g/L。從可大幅提升微小孔之填充性之觀點來看,該濃度尤其宜為0.7~2.5g/L(更佳為0.9~2.2g/L)。The concentration of polyvalent metal ions in the plating solution is not particularly limited, and is, for example, 0.01 to 20 g/L. From the perspective of micropore filling, the concentration is preferably 0.05 to 10 g/L, more preferably 0.1 to 5 g/L, more preferably 0.2 to 3 g/L, and even more preferably 0.5 to 3 g/L. From the perspective of significantly improving micropore filling, the concentration is particularly preferably 0.7 to 2.5 g/L (more preferably 0.9 to 2.2 g/L).
本發明之間歇鍍敷方法中,析出至被鍍敷物上的金屬並無特殊限制。該金屬例如可列舉:Cu、Ni、Sn等。該等中又以Cu尤佳。析出至被鍍敷物上的金屬可為單獨1種,亦可為2種以上的組合。In the intermittent plating method of the present invention, the metal precipitated on the plated object is not particularly limited. Examples of the metal include Cu, Ni, Sn, etc. Among them, Cu is particularly preferred. The metal precipitated on the plated object may be a single metal or a combination of two or more metals.
配合析出金屬,於鍍敷液中含有析出金屬之離子、視需要摻合的成分等其他成分。其他成分可遵循或比照公知電鍍液(例如Cu鍍敷液(例如硫酸銅浴、氟硼酸銅浴、氰化銅浴、焦磷酸銅浴等)、Ni鍍敷液(例如複鹽浴、常規鍍浴、滾鍍浴、高硫酸鹽浴、瓦特浴、全氯化物浴、硫酸鹽-氯化物浴、全硫酸鹽浴、高質浴、衝擊(strike)鎳浴、胺磺酸鎳浴、氟硼酸鎳浴等)、Sn鍍敷液(例如鹼性浴、硫酸浴、磺酸浴、焦磷酸浴、氟硼酸浴等)等)之組成適當地設定。In combination with the deposited metal, the plating solution contains other components such as ions of the deposited metal and components that are optionally mixed. Other components can be appropriately set in accordance with or in accordance with the composition of known electroplating solutions (e.g., Cu plating solutions (e.g., copper sulfate bath, copper fluoroborate bath, copper cyanide bath, copper pyrophosphate bath, etc.), Ni plating solutions (e.g., complex salt bath, conventional plating bath, roller plating bath, high sulfate bath, Watt bath, full chloride bath, sulfate-chloride bath, full sulfate bath, high-quality bath, strike nickel bath, amine sulfonic acid nickel bath, nickel fluoroborate bath, etc.), Sn plating solutions (e.g., alkaline bath, sulfuric acid bath, sulfonic acid bath, pyrophosphate bath, fluoroboric acid bath, etc.), etc.).
以下說明Cu鍍敷液作為代表。Cu鍍敷液可使用其他成分含有銅離子以及選自有機酸及無機酸中至少一種酸成分作為必要成分的酸性銅鍍敷液。The Cu plating solution is described below as a representative. The Cu plating solution may be an acidic copper plating solution containing copper ions and at least one acid component selected from organic acids and inorganic acids as essential components.
酸性銅鍍敷液中的銅離子源只要是鍍敷液中為可溶性之銅化合物,則無特殊限制而可加以使用。此種銅化合物之具體例可列舉如:硫酸銅、氧化銅、氯化銅、碳酸銅、焦磷酸銅、烷烴磺酸銅、烷醇磺酸銅、有機酸銅等。銅化合物可單獨一種或混合二種以上來使用。酸性銅鍍敷液中的銅化合物濃度並無特殊限制,例如可設定在20~280g/L之範圍內。該濃度宜為100~250g/L,更佳為150~230g/L。The copper ion source in the acidic copper plating solution can be used without special restrictions as long as it is a copper compound that is soluble in the plating solution. Specific examples of such copper compounds include: copper sulfate, copper oxide, copper chloride, copper carbonate, copper pyrophosphate, copper alkane sulfonate, copper alkanol sulfonate, organic acid copper, etc. The copper compound can be used alone or in combination of two or more. The concentration of the copper compound in the acidic copper plating solution is not particularly limited, for example, it can be set in the range of 20~280g/L. The concentration is preferably 100~250g/L, and more preferably 150~230g/L.
酸性銅鍍敷液中的酸成分可使用選自於由有機酸及無機酸所構成群組中之至少一種。有機酸之具體例可舉例甲磺酸等烷烴磺酸、烷醇磺酸等,無機酸之具體例可舉例硫酸等。該等酸成分可單獨一種或混合二種以上來使用。酸性銅鍍敷液中酸成分之濃度並無特殊限制,例如可設為10~400g/L。該濃度宜為40~200g/L,更佳為70~150g/L。The acid component in the acidic copper plating solution can be at least one selected from the group consisting of organic acids and inorganic acids. Specific examples of organic acids include alkane sulfonic acids such as methanesulfonic acid, alkanol sulfonic acids, etc., and specific examples of inorganic acids include sulfuric acid, etc. These acid components can be used alone or in combination of two or more. The concentration of the acid component in the acidic copper plating solution is not particularly limited, for example, it can be set to 10~400g/L. The concentration is preferably 40~200g/L, and more preferably 70~150g/L.
酸性銅鍍敷液宜含有氯化物離子。其濃度通常為10~200mg/L即可。該濃度宜為25~100mg/L,更佳為40~70mg/L。為了設定在此種濃度範圍內,可以視需要使用鹽酸、氯化鈉等來調整鍍敷液中氯化物離子濃度。The acid copper plating solution preferably contains chloride ions. The concentration is usually 10~200 mg/L. The concentration is preferably 25~100 mg/L, and more preferably 40~70 mg/L. In order to set it within this concentration range, hydrochloric acid, sodium chloride, etc. can be used as needed to adjust the chloride ion concentration in the plating solution.
酸性銅鍍敷液中亦可含有各種添加劑。添加劑中又以導孔填充用添加劑為佳。Acid copper plating solution may also contain various additives, among which additives for via filling are preferred.
被鍍敷物只要是具有微小孔的被鍍敷物且可進行電鍍者,則無特殊限制。被鍍敷物例如可舉例具有通孔的基板。The object to be plated is not particularly limited as long as it has micropores and can be electroplated. An example of the object to be plated is a substrate having through holes.
微小孔宜為微導孔。微小孔之尺寸例如為直徑300~5μm(較佳為150~30μm)、深度150~5μm(較佳為100~20μm)。依據本發明之間歇電鍍方法,即便對微導孔亦可發揮良好之填充性。The micro hole is preferably a micro via. The size of the micro hole is, for example, 300-5 μm in diameter (preferably 150-30 μm) and 150-5 μm in depth (preferably 100-20 μm). According to the intermittent plating method of the present invention, good filling performance can be achieved even for micro vias.
本發明之間歇電鍍方法中,被鍍敷物宜經前處理。前處理方法並無特殊限制,遵循常法即可。舉例言之,針對已施以導電化處理(例如無電鍍敷處理、碳處理、濺鍍處理、Sn-Pd膠態系催化劑處理、導電性聚合物處理等)的被鍍敷物,例如可將經由脫脂處理、前段步驟中所附著髒汙之去除處理、利用酸洗的氧化皮膜之去除等而得者,使用作為被鍍敷物。In the intermittent electroplating method of the present invention, the substrate to be plated is preferably pre-treated. The pre-treatment method is not particularly limited and can be carried out in accordance with conventional methods. For example, for a substrate to be plated that has been subjected to a conductive treatment (e.g., electroless plating, carbon treatment, sputtering, Sn-Pd colloidal catalyst treatment, conductive polymer treatment, etc.), for example, a substrate to be plated that has been subjected to a degreasing treatment, a treatment to remove attached dirt in the previous step, a treatment to remove an oxide film by pickling, etc., can be used as the substrate to be plated.
又,被鍍敷物亦可為業已形成利用電鍍的鍍敷膜者。Furthermore, the object to be plated may be one on which a coating film has already been formed by electroplating.
本發明之間歇電鍍方法只要是以間歇方式反覆電流附加循環的方法,則無特殊限制,並且該方法發生因些微附著於自鍍敷槽排出的被鍍敷物及供給至鍍敷槽的被鍍敷物上之鍍敷液(若為圖1所示實施形態之情形,則為自鍍敷槽側面稍微漏出的鍍敷液)導致低電流密度的產生這個問題。The intermittent electroplating method of the present invention is not particularly limited as long as it is a method of repeatedly applying current in an intermittent manner, and the method has the problem of low current density caused by the plating liquid slightly attached to the coated material discharged from the plating tank and the coated material supplied to the plating tank (if it is the case of the embodiment shown in Figure 1, it is the plating liquid slightly leaking from the side of the plating tank).
令鍍敷槽內的電流密度為高電流密度,且令鍍敷槽間產生的電流密度為低電流密度時,高電流密度:低電流密度(兩者的單位皆為A/dm2 )宜為1:0.005~0.1。另,從填充性更明顯降低,因而更適合使用本發明之間歇鍍敷方法的觀點來看,產生低電流密度的時間(例如被鍍敷物通過鍍敷槽間的時間)宜為2秒以上,且以3秒以上為佳。該時間之上限無特別限制,例如為60秒、30秒、20秒、10秒或5秒。When the current density in the coating tank is set to a high current density and the current density generated between the coating tanks is set to a low current density, the high current density: low current density (both units are A/dm 2 ) is preferably 1:0.005-0.1. In addition, from the perspective that the filling property is more significantly reduced and the intermittent coating method of the present invention is more suitable, the time for generating the low current density (for example, the time for the coated object to pass through the coating tanks) is preferably 2 seconds or more, and preferably 3 seconds or more. The upper limit of the time is not particularly limited, for example, 60 seconds, 30 seconds, 20 seconds, 10 seconds or 5 seconds.
本發明之間歇電鍍方法宜為以下方法:長條狀被鍍敷物於作業線上以連續方式供給至鍍敷槽,並且反覆複數次自鍍敷槽排出被鍍敷物與朝鍍敷槽供給被鍍敷物。The intermittent electroplating method of the present invention is preferably the following method: a long strip of the object to be coated is continuously supplied to the coating tank on the working line, and the object to be coated is repeatedly discharged from the coating tank and supplied to the coating tank.
所謂「長條狀被鍍敷物於作業線上以連續方式供給至鍍敷槽」,並非是將複數個已相互分割的被鍍敷物依序供給至鍍敷槽,而是意指將一個長條狀的被鍍敷物一邊利用滾筒等進行搬送,一邊自被鍍敷物之一端側供給至鍍敷槽之態樣。The so-called "long strips of coated objects are continuously supplied to the coating tank on the production line" does not mean that a plurality of separated coated objects are sequentially supplied to the coating tank, but means that a long strip of coated object is transported by a roller or the like while being supplied to the coating tank from one end of the object.
自鍍敷槽排出被鍍敷物與朝鍍敷槽供給被鍍敷物之態樣並無特殊限制。該排出及該供給宜於鍍敷槽之側面進行。在此情形下,當被鍍敷物自鍍敷槽之側面壁排出時,以及被鍍敷物經過鍍敷槽之側面壁被供給時,鍍敷槽內部的鍍敷液會經由被鍍敷物而漏出至鍍敷槽外,並發生本發明中的問題(低電流密度的產生)。There is no particular limitation on the mode of discharging the coated object from the coating tank and supplying the coated object to the coating tank. The discharging and supplying are preferably performed from the side of the coating tank. In this case, when the coated object is discharged from the side wall of the coating tank and when the coated object is supplied through the side wall of the coating tank, the coating liquid inside the coating tank may leak out of the coating tank through the coated object, and the problem in the present invention (generation of low current density) may occur.
反覆被鍍敷物對鍍敷槽之供給與排出的次數例如為2~30次,較佳為5~25次,更佳為10~20次。The coating material is repeatedly supplied to and discharged from the coating tank for, for example, 2 to 30 times, preferably 5 to 25 times, and more preferably 10 to 20 times.
本發明之間歇電鍍方法宜為被鍍敷物通過複數個鍍敷槽的方法。通過的鍍敷槽數例如為2~30,較佳為5~25,更佳為10~20。The intermittent electroplating method of the present invention is preferably a method in which the substrate passes through a plurality of plating tanks, for example, 2 to 30, preferably 5 to 25, and more preferably 10 to 20.
本發明之間歇電鍍方法宜為於捲盤至捲盤之作業線上進行的方法。The intermittent electroplating method of the present invention is preferably a method performed on a reel-to-reel operation line.
鍍敷液之攪拌方法亦無特殊限制,可進行空氣攪拌、噴流攪拌、機械式攪拌等,亦可組合複數種攪拌方法。There is no particular limitation on the method for stirring the coating liquid, and air stirring, jet stirring, mechanical stirring, etc., or a combination of multiple stirring methods may be used.
進行鍍敷處理時,陽極可使用可溶性陽極及不溶性陽極中任一者。舉例言之,可溶性陽極可使用例如含磷量0.02~0.06%的含磷銅。又,不溶性陽極可使用已於鈦上塗覆氧化銥者、已於鈦上鍍鉑者等。陽極之形狀亦無特殊限制,可使用棒狀、球狀、板狀、網目狀等各種形狀之陽極。When the plating treatment is performed, the anode can be either a soluble anode or an insoluble anode. For example, the soluble anode can be phosphorus-containing copper with a phosphorus content of 0.02 to 0.06%. In addition, the insoluble anode can be titanium coated with iridium oxide, titanium plated with platinum, etc. There is no particular limitation on the shape of the anode, and various shapes such as rods, balls, plates, and meshes can be used.
進行鍍敷處理時,陰極可使用被鍍敷物。During the plating process, the cathode may use the material to be plated.
鍍敷液之液溫通常設為10~50℃即可。該溫度宜為20~35℃。The temperature of the plating solution is usually set to 10~50℃. The temperature is preferably 20~35℃.
本發明之間歇電鍍方法中電流密度(鍍敷槽內的電流密度)例如為2~15A/dm2 ,較佳為2~10A/dm2 。In the intermittent electroplating method of the present invention, the current density (current density in the plating tank) is, for example, 2-15 A/dm 2 , preferably 2-10 A/dm 2 .
本發明之間歇電鍍方法中每次附加電流的時間(被鍍敷物中的某一點浸漬於鍍敷槽內的鍍敷液之時間)例如為5~120秒鐘,較佳為10~60秒鐘,更佳為20~40秒鐘。The time for each additional current in the intermittent plating method of the present invention (the time for a certain point in the object to be plated to be immersed in the plating solution in the plating tank) is, for example, 5 to 120 seconds, preferably 10 to 60 seconds, and more preferably 20 to 40 seconds.
本發明之間歇電鍍方法中電流附加循環的次數例如為2~30次,較佳為5~25次,更佳為10~20次。The number of current additional cycles in the intermittent plating method of the present invention is, for example, 2 to 30 times, preferably 5 to 25 times, and more preferably 10 to 20 times.
實施例 以下,根據實施例,詳細說明本發明,惟本發明並非受限於該等實施例。Embodiments The present invention is described in detail below based on embodiments, but the present invention is not limited to these embodiments.
試驗例1.間歇電鍍試驗1 <試驗例1-1.電鍍液之調製> 調製出下述表1所示組成的電鍍液。Test Example 1. Intermittent Plating Test 1 <Test Example 1-1. Preparation of Plating Solution> Prepare a plating solution having the composition shown in Table 1 below.
[表1] [Table 1]
<試驗例1-2.前處理> 厚度64μm(層構造:銅箔7μm/樹脂(聚醯亞胺)層50μm/銅箔7μm)之銅箔樹脂基板中,具有許多直徑100μm且深度57μm的通孔,且利用碳的直接鍍敷系統使通孔樹脂內壁具有導電性,將如此構成的基板(圖2)使用作為被鍍敷物,並將其於45℃下浸漬於脫脂液(商品名:DP-320 CLEAN 奧野製藥工業公司製造,100ml/L水溶液)中5分鐘後,水洗1分鐘,並浸漬於100g/L稀硫酸中1分鐘而進行前處理。<Test Example 1-2. Pretreatment> A copper foil resin substrate with a thickness of 64μm (layer structure: copper foil 7μm/resin (polyimide) layer 50μm/copper foil 7μm) has many through holes with a diameter of 100μm and a depth of 57μm, and the inner wall of the through-hole resin is made conductive by a carbon direct plating system. The substrate (Figure 2) thus constructed is used as the plated object and is immersed in a degreasing solution (trade name: DP-320 CLEAN, manufactured by Okuno Pharmaceutical Industries, 100ml/L aqueous solution) at 45°C for 5 minutes, then rinsed with water for 1 minute, and immersed in 100g/L dilute sulfuric acid for 1 minute for pretreatment.
<試驗例1-3.電鍍> 將前處理後的被鍍敷物浸漬於上述所製得電鍍液中,以表2所示之循環進行電鍍。鍍敷條件如表3。表2中的低電流密度及其通電時間之具體值顯示於表4中。又,於圖3呈現顯示該循環之一例(低電流密度=0.2A/dm2 、通電時間5秒)的圖表。<Test Example 1-3. Electroplating> The pre-treated substrate was immersed in the electroplating solution prepared above and electroplated in the cycle shown in Table 2. The plating conditions are shown in Table 3. The specific values of the low current density and the power-on time in Table 2 are shown in Table 4. In addition, a graph showing an example of the cycle (low current density = 0.2A/ dm2 , power-on time 5 seconds) is shown in FIG3.
[表2] [Table 2]
[表3] [Table 3]
<試驗例1-4.填充性評價> 結束電鍍後,進行被鍍敷物之導孔部分之截面觀察,測得圖4所示導孔部分之凹陷量。根據測定值,利用以下評價基準(○:凹陷量48μm以下、△:凹陷量:48~53μm、×:凹陷量53μm以上)評價填充性。<Test Example 1-4. Evaluation of filling property> After the electroplating, the cross-section of the via portion of the plated object was observed, and the amount of depression in the via portion was measured as shown in Figure 4. Based on the measured value, the filling property was evaluated using the following evaluation criteria (○: depression amount 48μm or less, △: depression amount: 48~53μm, ×: depression amount 53μm or more).
<試驗例1-5.結果> 表4中顯示結果。表4中,低電流密度是表示表2之循環中的低電流密度,通電時間則表示表2之循環中低電流密度之通電時間(X)。<Test Example 1-5. Results> The results are shown in Table 4. In Table 4, low current density refers to the low current density in the cycle of Table 2, and power-on time refers to the power-on time (X) of low current density in the cycle of Table 2.
[表4] [Table 4]
如表4所示,當以不產生低電流密度的循環進行電鍍時(比較例1),填充性較為良好。然而,在間歇電鍍中,尤其是長條狀被鍍敷物於作業線上以連續方式供給至鍍敷槽並且反覆複數次自鍍敷槽排出被鍍敷物與朝鍍敷槽供給被鍍敷物的間歇電鍍等中,無法避免因些微附著於自鍍敷槽排出的被鍍敷物及供給至鍍敷槽的被鍍敷物上之鍍敷液而導致低電流密度的產生,就此模擬表示所述情形後(比較例2~5),可知填充性會大幅惡化。As shown in Table 4, when electroplating is performed in a cycle that does not generate low current density (Comparative Example 1), the filling property is relatively good. However, in intermittent electroplating, especially in intermittent electroplating where a long strip of coated material is continuously supplied to a coating tank on a production line and the coated material is discharged from the coating tank and supplied to the coating tank several times, it is inevitable that the coating liquid slightly adheres to the coated material discharged from the coating tank and the coated material supplied to the coating tank, resulting in low current density. After simulating the above situation (Comparative Examples 2 to 5), it can be seen that the filling property will be greatly deteriorated.
試驗例2.間歇電鍍試驗2 除了於電鍍液中添加硫酸鐵n水合物而將Fe3+ 濃度調整為表5所示濃度外,設為與試驗例1-1相同,調製出電鍍液。其他則設為與試驗例1相同而進行前處理、電鍍及填充性評價。Test Example 2. Intermittent Plating Test 2 The plating solution was prepared in the same manner as in Test Example 1-1, except that iron sulfate n-hydrate was added to the plating solution to adjust the Fe 3+ concentration to the concentration shown in Table 5. The pretreatment, plating, and filling evaluation were performed in the same manner as in Test Example 1.
表5中顯示結果。表5中,低電流密度是表示表2之循環中的低電流密度,通電時間則表示表2之循環中低電流密度之通電時間(X)。又,圖5中顯示實施例2及比較例3之結束電鍍後被鍍敷物之導孔部分之截面觀察圖。The results are shown in Table 5. In Table 5, low current density refers to the low current density in the cycle of Table 2, and power-on time refers to the power-on time (X) of the low current density in the cycle of Table 2. In addition, FIG. 5 shows a cross-sectional observation of the via portion of the plated object after the electroplating of Example 2 and Comparative Example 3.
[表5] [Table 5]
如表5所示,可知低電流密度的產生所致之填充性惡化(比較例1與比較例2~5之比較)能藉由使用含有Fe3+ 的鍍敷液而大幅地改善。As shown in Table 5, it can be seen that the deterioration of filling properties caused by the generation of low current density (comparison between Comparative Example 1 and Comparative Examples 2 to 5) can be greatly improved by using a plating solution containing Fe 3+ .
試驗例3.間歇電鍍試驗3 除了於電鍍液中添加各種金屬化合物而將多價金屬離子濃度調整為表6所示濃度外,設為與試驗例1-1相同,調製出電鍍液。其他則設為與試驗例1相同而進行前處理、電鍍及填充性評價。另,本試驗中低電流密度為0.2A/dm2 ,其通電時間5秒。Test Example 3. Intermittent Plating Test 3 The plating solution was prepared in the same manner as in Test Example 1-1, except that various metal compounds were added to the plating solution to adjust the polyvalent metal ion concentration to the concentration shown in Table 6. The pretreatment, plating, and filling evaluation were performed in the same manner as in Test Example 1. In this test, the low current density was 0.2 A/dm 2 and the current-on time was 5 seconds.
表6中顯示結果。The results are shown in Table 6.
[表6] [Table 6]
如表6所示,可知低電流密度的產生所致之填充性惡化(比較例1與比較例2~5之比較)能藉由使用含有多價金屬離子的鍍敷液而大幅地改善。As shown in Table 6, it can be seen that the deterioration of filling properties caused by the generation of low current density (comparison between Comparative Example 1 and Comparative Examples 2 to 5) can be greatly improved by using a plating solution containing polyvalent metal ions.
圖1為顯示間歇電鍍法一實施形態的示意圖並且顯示該電鍍法中的電流圖形。 圖2為試驗例1-2中所用基板的截面示意圖。 圖3為顯示試驗例1-3之電鍍循環之一例的圖表。 圖4為顯示填充性評價中所測定對象(凹陷量)、結束電鍍後被鍍敷物之導孔部分之截面觀察圖。 圖5為實施例2及比較例3之結束電鍍後被鍍敷物之導孔部分之截面觀察圖。FIG1 is a schematic diagram showing an implementation form of the intermittent plating method and showing a current diagram in the plating method. FIG2 is a schematic diagram of a cross section of a substrate used in Test Example 1-2. FIG3 is a graph showing an example of a plating cycle of Test Example 1-3. FIG4 is a cross-sectional observation diagram showing the object (depression amount) measured in the filling evaluation and the via portion of the plated object after the completion of the plating. FIG5 is a cross-sectional observation diagram of the via portion of the plated object after the completion of the plating in Example 2 and Comparative Example 3.
(無)(without)
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|---|---|---|---|---|
| JP2005089799A (en) * | 2003-09-16 | 2005-04-07 | Toppan Printing Co Ltd | Plating equipment |
| CN101416569A (en) * | 2006-03-30 | 2009-04-22 | 埃托特克德国有限公司 | Electrolytic method for filling holes and recesses with metal |
| TW200942650A (en) * | 2007-12-04 | 2009-10-16 | Ebara Corp | Method for forming conductive structure, and plating apparatus and plating method |
| US8500983B2 (en) * | 2009-05-27 | 2013-08-06 | Novellus Systems, Inc. | Pulse sequence for plating on thin seed layers |
| US20190201675A1 (en) * | 2015-08-17 | 2019-07-04 | National Technology & Engineering Solutions Of Sandia, Llc | Electromolded microneedles and fabrication methods thereof |
-
2021
- 2021-05-14 TW TW110117559A patent/TWI862835B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005089799A (en) * | 2003-09-16 | 2005-04-07 | Toppan Printing Co Ltd | Plating equipment |
| CN101416569A (en) * | 2006-03-30 | 2009-04-22 | 埃托特克德国有限公司 | Electrolytic method for filling holes and recesses with metal |
| TW200942650A (en) * | 2007-12-04 | 2009-10-16 | Ebara Corp | Method for forming conductive structure, and plating apparatus and plating method |
| US8500983B2 (en) * | 2009-05-27 | 2013-08-06 | Novellus Systems, Inc. | Pulse sequence for plating on thin seed layers |
| US20190201675A1 (en) * | 2015-08-17 | 2019-07-04 | National Technology & Engineering Solutions Of Sandia, Llc | Electromolded microneedles and fabrication methods thereof |
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| Publication number | Publication date |
|---|---|
| TW202146712A (en) | 2021-12-16 |
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