TWI861382B - Adhesive tape - Google Patents
Adhesive tape Download PDFInfo
- Publication number
- TWI861382B TWI861382B TW110111676A TW110111676A TWI861382B TW I861382 B TWI861382 B TW I861382B TW 110111676 A TW110111676 A TW 110111676A TW 110111676 A TW110111676 A TW 110111676A TW I861382 B TWI861382 B TW I861382B
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive tape
- phenoxy resin
- skeleton
- mass
- adhesive layer
- Prior art date
Links
- 239000002390 adhesive tape Substances 0.000 title claims abstract description 82
- 239000013034 phenoxy resin Substances 0.000 claims abstract description 66
- 229920006287 phenoxy resin Polymers 0.000 claims abstract description 66
- 239000012790 adhesive layer Substances 0.000 claims abstract description 52
- 239000003822 epoxy resin Substances 0.000 claims abstract description 31
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 31
- 150000008065 acid anhydrides Chemical class 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims description 41
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 24
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 15
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 9
- 239000011342 resin composition Substances 0.000 claims description 9
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000004305 biphenyl Substances 0.000 claims description 6
- 235000010290 biphenyl Nutrition 0.000 claims description 6
- 230000009477 glass transition Effects 0.000 claims description 4
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical group C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 3
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical group C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 claims description 3
- 125000005577 anthracene group Chemical group 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 3
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 3
- 125000001624 naphthyl group Chemical group 0.000 claims description 3
- 125000005581 pyrene group Chemical group 0.000 claims description 3
- 238000007789 sealing Methods 0.000 description 34
- 229920005989 resin Polymers 0.000 description 31
- 239000011347 resin Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 15
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- -1 phenol compound Chemical class 0.000 description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 6
- 239000003292 glue Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 5
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003999 initiator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- UICXTANXZJJIBC-UHFFFAOYSA-N 1-(1-hydroperoxycyclohexyl)peroxycyclohexan-1-ol Chemical compound C1CCCCC1(O)OOC1(OO)CCCCC1 UICXTANXZJJIBC-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- AVTLBBWTUPQRAY-UHFFFAOYSA-N 2-(2-cyanobutan-2-yldiazenyl)-2-methylbutanenitrile Chemical compound CCC(C)(C#N)N=NC(C)(CC)C#N AVTLBBWTUPQRAY-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- QGRZMPCVIHBQOE-UHFFFAOYSA-N 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)CC(C)=C2C(C(O)=O)C(C(O)=O)CC(C)=C21 QGRZMPCVIHBQOE-UHFFFAOYSA-N 0.000 description 1
- LURZHSJDIWXJOH-UHFFFAOYSA-N 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-2,3,6,7-tetracarboxylic acid Chemical compound C1C(C(O)=O)C(C(O)=O)C(C)=C2CC(C(O)=O)C(C(O)=O)C(C)=C21 LURZHSJDIWXJOH-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
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- 239000006087 Silane Coupling Agent Substances 0.000 description 1
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- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- BPOZNMOEPOHHSC-UHFFFAOYSA-N butyl prop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCCCOC(=O)C=C BPOZNMOEPOHHSC-UHFFFAOYSA-N 0.000 description 1
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- JDVIRCVIXCMTPU-UHFFFAOYSA-N ethanamine;trifluoroborane Chemical compound CCN.FB(F)F JDVIRCVIXCMTPU-UHFFFAOYSA-N 0.000 description 1
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- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- KADGVXXDDWDKBX-UHFFFAOYSA-N naphthalene-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C21 KADGVXXDDWDKBX-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- BBYQSYQIKWRMOE-UHFFFAOYSA-N naphthalene-1,2,6,7-tetracarboxylic acid Chemical compound C1=C(C(O)=O)C(C(O)=O)=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 BBYQSYQIKWRMOE-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
- C08L71/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08L71/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
- C09J171/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C09J171/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Adhesive Tapes (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
本發明是有關於一種主要用於製造半導體裝置的黏著帶。 The present invention relates to an adhesive tape mainly used for manufacturing semiconductor devices.
於大規模積體電路(Large Scale Integrated circuit,LSI)的安裝技術中,晶片級封裝(Chip Size/Scale Package,CSP)技術受到關注,其中,關於以四方無引線封裝(Quad Flat Non-leaded package,QFN)為代表的將引線端子裝入封裝內部的形態的封裝,於小型化與高積體的方面有利。作為此種QFN的製造方法,可採用如下方法:將多個QFN用半導體晶片排列於引線框架的封裝圖案區域的晶粒墊(die pad)上,並於模具的模穴內利用密封樹脂成批密封後,切分成個別的QFN結構物,藉此提高引線框架每單位面積的生產性。 Among the mounting technologies of large scale integrated circuits (LSI), chip size/scale package (CSP) technology has attracted attention. Among them, the package in which the lead terminals are installed inside the package, represented by the quad flat non-leaded package (QFN), is advantageous in terms of miniaturization and high integration. As a manufacturing method for such QFN, the following method can be adopted: multiple QFN semiconductor chips are arranged on the die pad in the package pattern area of the lead frame, and after being sealed in batches with a sealing resin in the mold cavity of the mold, they are cut into individual QFN structures, thereby improving the productivity per unit area of the lead frame.
於如上所述的成批密封多個半導體晶片的QFN的製造方法中,樹脂密封時模塑(mold)模具所夾的區域僅為比封裝圖案區域向外側擴展的樹脂密封區域的更外側的區域。因此,密封樹脂向引線框架背面洩露,容易產生由模塑樹脂產生的毛刺所引起的連接不良、或QFN的端子等被樹脂被覆的問題。因此,於QFN的製造方法中,認為有效的是於引線框架的背面側貼附耐熱性的黏著帶,藉由利用該黏著帶的自身黏著力(遮蔽)的密封效 果來防止樹脂密封時向引線框架背面側的樹脂洩漏。 In the manufacturing method of QFN for batch sealing of multiple semiconductor chips as described above, the area clamped by the mold during resin sealing is only the area outside the resin sealing area that expands outward from the packaging pattern area. Therefore, the sealing resin leaks to the back of the lead frame, which easily causes poor connection caused by burrs generated by the molding resin, or the problem of the terminals of the QFN being covered by the resin. Therefore, in the manufacturing method of QFN, it is considered effective to attach a heat-resistant adhesive tape to the back side of the lead frame, and prevent the resin from leaking to the back side of the lead frame during resin sealing by utilizing the sealing effect of the adhesive force (shielding) of the adhesive tape itself.
於此種製造方法中,可採用:於引線框架上搭載半導體晶片後或者於實施打線接合後進行黏著帶的貼合的方法;或於最初的階段將黏著帶貼合於引線框架的背面(外部焊墊面),然後,經過半導體晶片的搭載步驟或打線接合步驟來進行利用密封樹脂的密封步驟的方法。例如,專利文獻1中提出了如下製造方法:使用具有黏著劑層的耐熱性黏著帶,可於防止樹脂洩漏的同時實施打線接合等一系列的步驟。另外,專利文獻2中揭示了含有基材、以及黏著劑層的電子零件製造用黏著帶,所述黏著劑層包含含有苯氧基樹脂的黏著劑組成物,報告了藉此可改善黏著帶的黏著劑殘渣或樹脂密封步驟中的密封樹脂洩漏。 In this manufacturing method, the following methods can be adopted: a method of attaching an adhesive tape after mounting a semiconductor chip on a lead frame or after performing wire bonding; or a method of attaching an adhesive tape to the back side (external pad side) of a lead frame in the initial stage, and then performing a sealing step using a sealing resin after a semiconductor chip mounting step or a wire bonding step. For example, Patent Document 1 proposes the following manufacturing method: using a heat-resistant adhesive tape having an adhesive layer, a series of steps such as wire bonding can be performed while preventing resin leakage. In addition, Patent Document 2 discloses an adhesive tape for manufacturing electronic components containing a substrate and an adhesive layer, wherein the adhesive layer contains an adhesive composition containing a phenoxy resin, and reports that the adhesive residue of the adhesive tape or the sealing resin leakage in the resin sealing step can be improved.
[現有技術文獻] [Prior art literature]
[專利文獻] [Patent Literature]
專利文獻1:日本專利特開2002-184801號公報 Patent document 1: Japanese Patent Publication No. 2002-184801
專利文獻2:日本專利特表2012-504698號公報 Patent document 2: Japanese Patent Publication No. 2012-504698
於QFN的製造中,於引線框架上搭載半導體晶片後,進行利用接合線電連接引線框架的端子部前端與半導體晶片上的電極墊的打線接合步驟。此時,於貼合於引線框架的背面的黏著帶並非高彈性時,存在產生接合線與引線框架之間的連接不良,線連接可靠性降低的問題。先前的黏著帶於該方面無法說具有充分的線連接可靠性,尤其是於使用預鍍引線框架(Pre-Plated Lead-Frame,PPF)作為引線框架,使用銅作為線的情況下,線連 接可靠性的降低變得顯著。 In the manufacture of QFN, after a semiconductor chip is mounted on a lead frame, a wire bonding step is performed to electrically connect the front end of the terminal portion of the lead frame to the electrode pad on the semiconductor chip using a bonding wire. At this time, if the adhesive tape attached to the back of the lead frame is not highly elastic, there is a problem of poor connection between the bonding wire and the lead frame, and the wire connection reliability is reduced. The previous adhesive tape cannot be said to have sufficient wire connection reliability in this regard, especially when a pre-plated lead frame (PPF) is used as the lead frame and copper is used as the wire, the reduction in wire connection reliability becomes significant.
本發明是鑑於所述情況而成者,目的在於提供一種打線接合步驟後的線連接可靠性優異的黏著帶。 The present invention is made in view of the above situation, and its purpose is to provide an adhesive tape with excellent wire connection reliability after the wire bonding step.
本發明者等人為了解決所述課題進行了銳意研究,結果發現具有包含苯氧基樹脂、酸酐及環氧樹脂的黏著層的黏著帶可解決所述課題,從而完成了本發明。 The inventors of the present invention have conducted intensive research to solve the above-mentioned problem, and found that an adhesive tape having an adhesive layer containing phenoxy resin, acid anhydride and epoxy resin can solve the above-mentioned problem, thereby completing the present invention.
即,本發明如下所述。 That is, the present invention is as follows.
[1] [1]
一種黏著帶,具有包含苯氧基樹脂、酸酐及環氧樹脂的黏著層。 An adhesive tape having an adhesive layer comprising a phenoxy resin, an acid anhydride and an epoxy resin.
[2] [2]
如所述[1]所述的黏著帶,其中所述黏著層的於150℃以上且200℃以下的儲存彈性係數為50MPa以下,於超過200℃且為250℃以下的儲存彈性係數為3MPa以上。 The adhesive tape as described in [1], wherein the storage elastic modulus of the adhesive layer at a temperature above 150°C and below 200°C is below 50 MPa, and the storage elastic modulus at a temperature above 200°C and below 250°C is above 3 MPa.
[3] [3]
如所述[1]或[2]所述的黏著帶,其中所述黏著層的於未滿150℃下的儲存彈性係數為3MPa~10000MPa。 The adhesive tape as described in [1] or [2], wherein the storage elastic modulus of the adhesive layer at less than 150°C is 3MPa~10000MPa.
[4] [4]
如所述[1]~[3]中任一項所述的黏著帶,其中所述苯氧基樹脂包含選自由雙酚A型苯氧基樹脂、雙酚F型苯氧基樹脂、含有雙酚A/F混合型骨架的苯氧基樹脂、雙酚S型苯氧基樹脂、含有萘骨架的苯氧基樹脂、含有芴骨架的苯氧基樹脂、含有聯苯骨架的苯氧基樹脂、含有蒽骨架的苯氧基樹脂、含有芘骨架的苯氧基樹 脂、含有呫噸骨架的苯氧基樹脂、含有金剛烷骨架的苯氧基樹脂及含有二環戊二烯骨架的苯氧基樹脂所組成的群組中的一種以上。 The adhesive tape as described in any one of [1] to [3], wherein the phenoxy resin comprises one or more selected from the group consisting of bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, phenoxy resin containing a bisphenol A/F mixed type skeleton, bisphenol S type phenoxy resin, phenoxy resin containing a naphthalene skeleton, phenoxy resin containing a fluorene skeleton, phenoxy resin containing a biphenyl skeleton, phenoxy resin containing an anthracene skeleton, phenoxy resin containing a pyrene skeleton, phenoxy resin containing a xanthane skeleton, phenoxy resin containing an adamantane skeleton, and phenoxy resin containing a dicyclopentadiene skeleton.
[5] [5]
如所述[1]~[4]中任一項所述的黏著帶,其中構成所述黏著層的樹脂組成物的玻璃轉移溫度(Tg)為80℃以上。 The adhesive tape as described in any one of [1] to [4], wherein the glass transition temperature (Tg) of the resin composition constituting the adhesive layer is above 80°C.
[6] [6]
如所述[1]~[5]中任一項所述的黏著帶,其中所述酸酐包含選自由單官能酸酐及多官能酸酐所組成的群組中的任一種以上。 The adhesive tape as described in any one of [1] to [5], wherein the acid anhydride comprises one or more selected from the group consisting of monofunctional acid anhydrides and polyfunctional acid anhydrides.
[7] [7]
如所述[1]~[6]中任一項所述的黏著帶,其中所述環氧樹脂是一分子中具有兩個以上的環氧基的環氧樹脂。 The adhesive tape as described in any one of [1] to [6], wherein the epoxy resin is an epoxy resin having two or more epoxy groups in one molecule.
[8] [8]
如所述[1]~[7]中任一項所述的黏著帶,其中所述黏著層進而含有硬化觸媒。 An adhesive tape as described in any one of [1] to [7], wherein the adhesive layer further contains a hardening catalyst.
[9] [9]
如所述[1]~[8]中任一項所述的黏著帶,可用於製造半導體裝置。 The adhesive tape described in any one of [1] to [8] can be used to manufacture semiconductor devices.
[10] [10]
如所述[9]所述的黏著帶,其中所述半導體裝置是QFN封裝(Quad Flat Non-leaded Package)。 The adhesive tape as described in [9], wherein the semiconductor device is a QFN package (Quad Flat Non-leaded Package).
[11] [11]
如所述[9]或[10]所述的黏著帶,是於打線接合步驟之前貼合於引線框架上的先黏貼用帶。 The adhesive tape as described in [9] or [10] is a pre-adhesive tape that is adhered to the lead frame before the wire bonding step.
根據本發明,可提供一種打線接合步驟後的線連接可靠性優異的黏著帶。 According to the present invention, an adhesive tape with excellent wire connection reliability after the wire bonding step can be provided.
1:黏著帶 1: Adhesive tape
2:引線框架 2: Lead frame
3:半導體晶片 3: Semiconductor chip
4:接合線 4:Joining line
5:密封樹脂 5: Sealing resin
10:半導體裝置 10: Semiconductor devices
圖1-1的(a)~圖1-1的(e)是表示使用本發明的黏著帶的半導體裝置的製造方法的一例的步驟圖。 Figure 1-1 (a) to Figure 1-1 (e) are step diagrams showing an example of a method for manufacturing a semiconductor device using the adhesive tape of the present invention.
圖1-2的(f)、圖1-2的(g)是表示使用本發明的黏著帶的半導體裝置的製造方法的一例的步驟圖。 Figure 1-2 (f) and Figure 1-2 (g) are step diagrams showing an example of a method for manufacturing a semiconductor device using the adhesive tape of the present invention.
以下,對用於實施本發明的形態(以下,簡稱為「本實施方式」)進行詳細說明。以下的本實施方式是用於說明本發明的例示,主旨並非是將本發明限定於以下內容。本發明可於其主旨的範圍內適當變形來實施。再者,於本說明書中,只要無特別說明,則「硬化」不僅為全硬化,亦包含半硬化。另外,於本說明書中,所謂「黏著帶」,是指於常溫(20℃~30℃)下與被黏物不接著、於高溫區域(100℃以上)中與被黏物可良好地接著的帶。 The following is a detailed description of the form used to implement the present invention (hereinafter referred to as "this embodiment"). The following this embodiment is an example used to illustrate the present invention, and the main purpose is not to limit the present invention to the following content. The present invention can be implemented by appropriately deforming within the scope of its main purpose. Furthermore, in this specification, unless otherwise specified, "hardening" not only refers to full hardening but also includes semi-hardening. In addition, in this specification, the so-called "adhesive tape" refers to a tape that does not adhere to the adherend at room temperature (20℃~30℃) and can be well adhered to the adherend in a high temperature range (above 100℃).
本實施方式的黏著帶是具有包含苯氧基樹脂、酸酐及環氧樹脂的黏著層的黏著帶。 The adhesive tape of this embodiment has an adhesive layer containing a phenoxy resin, an acid anhydride, and an epoxy resin.
[苯氧基樹脂] [Phenoxy resin]
就提高硬化物的耐熱性、提高高溫區域的線連接可靠性的觀點而言,本實施方式的黏著帶的黏著層中所含的樹脂可使用苯氧基樹脂。作為苯氧基樹脂,並無特別限定,例如可列舉使表鹵醇與二價酚化合物反應而獲得的樹脂、或者使二價環氧化合物與二價酚化合物反應而獲得的樹脂。作為所述樹脂,例如可列舉選自 由雙酚A型苯氧基樹脂、雙酚F型苯氧基樹脂、含有雙酚A/F混合型骨架的苯氧基樹脂、雙酚S型苯氧基樹脂、含有萘骨架的苯氧基樹脂、含有芴骨架的苯氧基樹脂、含有聯苯骨架的苯氧基樹脂、含有蒽骨架的苯氧基樹脂、含有芘骨架的苯氧基樹脂、含有呫噸骨架的苯氧基樹脂、含有金剛烷骨架的苯氧基樹脂及含有二環戊二烯骨架的苯氧基樹脂所組成的群組中的一種以上。其中,就殘膠的觀點而言,較佳為雙酚A型、雙酚F型、雙酚A/F混合型、雙酚S型、聯苯型、萘型苯氧基樹脂,更佳為雙酚A型、雙酚A/F混合型、雙酚S型、聯苯型苯氧基樹脂。 From the viewpoint of improving the heat resistance of the cured product and improving the reliability of wire connection in a high temperature region, the resin contained in the adhesive layer of the adhesive tape of the present embodiment can be a phenoxy resin. The phenoxy resin is not particularly limited, and examples thereof include a resin obtained by reacting epihalogen alcohol with a divalent phenol compound, or a resin obtained by reacting a divalent epoxy compound with a divalent phenol compound. As the resin, for example, one or more selected from the group consisting of bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, phenoxy resin containing a bisphenol A/F mixed type skeleton, bisphenol S type phenoxy resin, phenoxy resin containing a naphthalene skeleton, phenoxy resin containing a fluorene skeleton, phenoxy resin containing a biphenyl skeleton, phenoxy resin containing an anthracene skeleton, phenoxy resin containing a pyrene skeleton, phenoxy resin containing a xanthane skeleton, phenoxy resin containing an adamantane skeleton, and phenoxy resin containing a dicyclopentadiene skeleton can be cited. Among them, from the perspective of residual rubber, bisphenol A type, bisphenol F type, bisphenol A/F mixed type, bisphenol S type, biphenyl type, naphthalene type phenoxy resins are preferred, and bisphenol A type, bisphenol A/F mixed type, bisphenol S type, biphenyl type phenoxy resins are more preferred.
苯氧基樹脂的重量平均分子量並無特別限定,較佳為1000~200000,更佳為5000~100000,進而佳為10000~50000。於苯氧基樹脂的重量平均分子量為1000~200000時,有可穩定地形成黏著層的傾向。 The weight average molecular weight of the phenoxy resin is not particularly limited, but is preferably 1000-200000, more preferably 5000-100000, and even more preferably 10000-50000. When the weight average molecular weight of the phenoxy resin is 1000-200000, an adhesive layer tends to be stably formed.
苯氧基樹脂的玻璃轉移溫度(Tg)並無特別限定,較佳為80℃以上,更佳為100℃以上,進而佳為120℃以上。於苯氧基樹脂的Tg為80℃以上的情況下,有線連接可靠性提高的傾向。 The glass transition temperature (Tg) of the phenoxy resin is not particularly limited, but is preferably above 80°C, more preferably above 100°C, and further preferably above 120°C. When the Tg of the phenoxy resin is above 80°C, the reliability of the wired connection tends to be improved.
黏著層中所含的苯氧基樹脂的含量並無特別限定,相對於黏著層100質量份,較佳為30質量份~80質量份,更佳為40質量份~70質量份,進而佳為50質量份~60質量份。於苯氧基樹脂的含量為30質量份以上時,有殘膠變得良好的傾向,於為80質量份以下時,有線連接可靠性變得良好的傾向。 The content of the phenoxy resin contained in the adhesive layer is not particularly limited, but is preferably 30 to 80 parts by mass, more preferably 40 to 70 parts by mass, and further preferably 50 to 60 parts by mass relative to 100 parts by mass of the adhesive layer. When the content of the phenoxy resin is 30 parts by mass or more, the residual adhesive tends to be good, and when it is 80 parts by mass or less, the wired connection reliability tends to be good.
[酸酐] [Anhydride]
作為本實施方式的黏著帶的黏著層中所含的酸酐,並無特別限定,例如可列舉選自由單官能酸酐及多官能酸酐所組成的群組 中的一種以上。 The acid anhydride contained in the adhesive layer of the adhesive tape of the present embodiment is not particularly limited, and for example, one or more selected from the group consisting of monofunctional acid anhydrides and polyfunctional acid anhydrides can be listed.
作為單官能酸酐,例如可使用選自由偏苯三甲酸酐、鄰苯二甲酸酐、馬來酸酐、均苯四甲酸酐、六氫鄰苯二甲酸酐、四氫鄰苯二甲酸酐、甲基納迪克酸酐、納迪克酸酐、戊二酸酐、甲基六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐所組成的群組中的任一種以上。 As the monofunctional acid anhydride, for example, any one or more selected from the group consisting of trimellitic anhydride, phthalic anhydride, maleic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylnadic anhydride, nadic anhydride, glutaric anhydride, methylhexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride can be used.
作為多官能酸酐,例如可使用選自由均苯四甲酸二酐、苯-1,2,3,4-四羧酸二酐、3,3',4,4'-二苯甲酮四羧酸二酐、2,2',3,3'-二苯甲酮四羧酸二酐、2,3,3',4'-二苯甲酮四羧酸二酐、萘-2,3,6,7-四羧酸二酐、萘-1,2,5,6-四羧酸二酐、萘-1,2,4,5-四羧酸二酐、萘-1,4,5,8-四羧酸二酐、萘-1,2,6,7-四羧酸二酐、4,8-二甲基-1,2,3,5,6,7-六氫萘-1,2,5,6-四羧酸二酐、4,8-二甲基-1,2,3,5,6,7-六氫萘-2,3,6,7-四羧酸二酐、2,2',3,3'-二苯基四羧酸二酐、2,3,3',4'-二苯基四羧酸二酐、5-(2,5-二氧代四氫-3-呋喃基)-3甲基-3-環己烯-1,2-羧酸二酐所組成的群組中的任一種以上。其中,就可穩定地形成黏著層的觀點而言,較佳為偏苯三甲酸酐、鄰苯二甲酸酐、馬來酸酐,更佳為偏苯三甲酸酐。 As the polyfunctional acid anhydride, for example, pyromellitic dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 2,2',3,3'-benzophenonetetracarboxylic dianhydride, 2,3,3',4'-benzophenonetetracarboxylic dianhydride, naphthalene-2,3,6,7-tetracarboxylic dianhydride, naphthalene-1,2,5,6-tetracarboxylic dianhydride, naphthalene-1,2,4,5-tetracarboxylic dianhydride, naphthalene-1,4,5,8-tetracarboxylic dianhydride, naphthalene-1,2,6,7 -tetracarboxylic acid dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-2,3,6,7-tetracarboxylic acid dianhydride, 2,2',3,3'-diphenyltetracarboxylic acid dianhydride, 2,3,3',4'-diphenyltetracarboxylic acid dianhydride, 5-(2,5-dioxotetrahydro-3-furanyl)-3methyl-3-cyclohexene-1,2-carboxylic acid dianhydride. Among them, trimellitic anhydride, phthalic anhydride, and maleic anhydride are preferred from the viewpoint of being able to stably form an adhesive layer, and trimellitic anhydride is more preferred.
黏著層中所含的酸酐的含量並無特別限定,相對於黏著層100質量份,較佳為10質量份~25質量份,更佳為15質量份~20質量份。於酸酐的含量為10質量份以上時,有作為主劑的苯氧基樹脂的硬化變得充分的傾向,於為25質量份以下時,有殘膠變得良好的傾向。 The content of the acid anhydride contained in the adhesive layer is not particularly limited, but is preferably 10 to 25 parts by mass, and more preferably 15 to 20 parts by mass, relative to 100 parts by mass of the adhesive layer. When the content of the acid anhydride is 10 parts by mass or more, the phenoxy resin as the main agent tends to be sufficiently cured, and when it is 25 parts by mass or less, the residual adhesive tends to be good.
[環氧樹脂] [Epoxy resin]
本實施方式的黏著帶的黏著層中所含的環氧樹脂若為一分子 中具有兩個以上的環氧基的樹脂,則並無特別限定,例如可使用選自由雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、酚醛清漆型環氧樹脂、胺型環氧樹脂、聯苯型環氧樹脂、脂環式環氧樹脂所組成的群組中的任一種以上。其中,就殘膠的觀點而言,較佳為酚醛清漆型環氧樹脂、胺型環氧樹脂,更佳為酚醛清漆型環氧樹脂。 The epoxy resin contained in the adhesive layer of the adhesive tape of the present embodiment is not particularly limited if it is a resin having two or more epoxy groups in one molecule. For example, any one or more selected from the group consisting of bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, novolac type epoxy resin, amine type epoxy resin, biphenyl type epoxy resin, and aliphatic epoxy resin can be used. Among them, from the perspective of residual glue, novolac type epoxy resin and amine type epoxy resin are preferred, and novolac type epoxy resin is more preferred.
黏著層中所含的環氧樹脂的含量並無特別限定,相對於黏著層100質量份,較佳為10質量份~45質量份,更佳為15質量份~40質量份。於環氧樹脂的含量為10質量份以上時,有作為主劑的苯氧基樹脂的硬化變得充分的傾向,於為45質量份以下時,有殘膠變得良好的傾向。 The content of the epoxy resin in the adhesive layer is not particularly limited, but is preferably 10 to 45 parts by mass, and more preferably 15 to 40 parts by mass, relative to 100 parts by mass of the adhesive layer. When the content of the epoxy resin is 10 parts by mass or more, the phenoxy resin as the main agent tends to be sufficiently cured, and when it is 45 parts by mass or less, the residual adhesive tends to be good.
作為環氧樹脂,就反應性的觀點而言,環氧當量較佳為90g/eq~300g/eq,更佳為90g/eq~200g/eq。 As an epoxy resin, from the viewpoint of reactivity, the epoxy equivalent is preferably 90g/eq~300g/eq, and more preferably 90g/eq~200g/eq.
[硬化觸媒] [Hardening Catalyst]
本實施方式的黏著帶的黏著層可進而含有硬化觸媒。作為硬化觸媒,較佳為使用活性溫度為120℃以下者。作為硬化觸媒,例如可列舉:過氧化苯甲醯、過氧化甲基乙基酮、過氧化第三丁基-2-乙基己酸酯、枯烯過氧化氫、過氧化環己酮、過氧化二枯基等有機過氧化物;2-甲基咪唑、N-苄基-2-甲基咪唑、2-十一烷基咪唑等咪唑系起始劑;2,2'-偶氮雙-(2-甲基丁腈)、2,2'-偶氮雙異丁腈等偶氮系起始劑、三氟化硼單乙胺等路易斯酸錯合物、多胺、三聚氰胺樹脂等。所述中,就觸媒殘渣所引起的污染的觀點而言,較佳為2-甲基咪唑、2-十一烷基咪唑等咪唑系起始劑。 The adhesive layer of the adhesive tape of the present embodiment may further contain a hardening catalyst. As a hardening catalyst, it is preferred to use one with an active temperature of 120°C or less. Examples of hardening catalysts include organic peroxides such as benzoyl peroxide, methyl ethyl ketone peroxide, tert-butyl-2-ethylhexanoate peroxide, cumene hydroperoxide, cyclohexanone peroxide, and dicumyl peroxide; imidazole-based initiators such as 2-methylimidazole, N-benzyl-2-methylimidazole, and 2-undecylimidazole; azo-based initiators such as 2,2'-azobis-(2-methylbutyronitrile) and 2,2'-azobisisobutyronitrile; Lewis acid complexes such as boron trifluoride monoethylamine; polyamines; melamine resins, and the like. Among the above, from the perspective of pollution caused by catalyst residues, imidazole-based initiators such as 2-methylimidazole and 2-undecylimidazole are preferred.
黏著層中所含的硬化觸媒的含量並無特別限定,相對於 苯氧基樹脂100質量份,較佳為0.01質量份~3質量份,更佳為0.05質量份~2質量份,進而佳為0.05質量份~1質量份。於硬化觸媒的含量為0.01質量份以上時,有可充分開始反應的傾向,於為3質量份以下時,有被黏物污染(殘膠)的風險變低的傾向。 The content of the curing catalyst contained in the adhesive layer is not particularly limited, but is preferably 0.01 to 3 parts by mass, more preferably 0.05 to 2 parts by mass, and further preferably 0.05 to 1 part by mass relative to 100 parts by mass of the phenoxy resin. When the content of the curing catalyst is 0.01 parts by mass or more, the reaction tends to start sufficiently, and when it is 3 parts by mass or less, the risk of contamination (residual adhesive) by the adherend tends to be reduced.
[其他成分] [Other ingredients]
本實施方式的黏著帶中所含的黏著層除了所述以外,亦可進而含有其他添加劑等。作為此種其他添加劑,可列舉:脫模劑、紫外線吸收劑、黏著賦予劑、軟化劑、填充劑、抗老化劑、顏料、染料、矽烷偶合劑等各種添加劑。 The adhesive layer contained in the adhesive tape of this embodiment may further contain other additives in addition to the above. Such other additives include: mold release agent, ultraviolet absorber, adhesion agent, softener, filler, anti-aging agent, pigment, dye, silane coupling agent and other additives.
[黏著層] [Adhesive layer]
本實施方式的黏著層的儲存彈性係數並無特別限定,於150℃以上且200℃以下的儲存彈性係數較佳為50MPa以下,更佳為30MPa以下,進而佳為20MPa以下。於150℃以上且200℃以下的儲存彈性係數為50MPa以下的情況下,有與作為被黏物的引線框架的接著性提高的傾向。另外,於超過200℃且為250℃以下的儲存彈性係數較佳為3MPa以上,更佳為5MPa以上,進而佳為10MPa以上。於超過200℃且為250℃以下的儲存彈性係數為3MPa以上的情況下,於所述溫度區域中亦可抑制黏著帶的變形,有線連接可靠性提高的傾向。 The storage modulus of the adhesive layer of the present embodiment is not particularly limited, and the storage modulus at 150°C to 200°C is preferably 50 MPa or less, more preferably 30 MPa or less, and further preferably 20 MPa or less. When the storage modulus at 150°C to 200°C is 50 MPa or less, there is a tendency for the adhesion to the lead frame as the adherend to be improved. In addition, the storage modulus at more than 200°C to 250°C is preferably 3 MPa or more, more preferably 5 MPa or more, and further preferably 10 MPa or more. When the storage elastic coefficient is above 3MPa at a temperature above 200°C and below 250°C, the deformation of the adhesive tape can be suppressed in the above temperature range, and the reliability of wired connection tends to be improved.
進而,就處理性的觀點而言,黏著層的儲存彈性係數於未滿150℃下的儲存彈性係數較佳為3MPa~10000MPa,更佳為5MPa~10000MPa,進而佳為10MPa~10000MPa。 Furthermore, from the perspective of handling properties, the storage elastic coefficient of the adhesive layer at a temperature below 150°C is preferably 3MPa~10000MPa, more preferably 5MPa~10000MPa, and further preferably 10MPa~10000MPa.
作為調整黏著層的儲存彈性係數的方法,例如可列舉調整苯氧基樹脂、環氧樹脂及酸酐的添加比例等。 As a method for adjusting the storage elastic coefficient of the adhesive layer, for example, adjusting the addition ratio of phenoxy resin, epoxy resin and acid anhydride can be listed.
構成本實施方式的黏著層的樹脂組成物的Tg並無特別限定,較佳為80℃以上,更佳為100℃以上,進而佳為120℃以上。於構成樹脂層的樹脂組成物的Tg為80℃以上的情況下,有線連接可靠性提高的傾向。 The Tg of the resin composition constituting the adhesive layer of the present embodiment is not particularly limited, but is preferably above 80°C, more preferably above 100°C, and further preferably above 120°C. When the Tg of the resin composition constituting the resin layer is above 80°C, the reliability of the wired connection tends to be improved.
[黏著帶] [Adhesive tape]
本實施方式的黏著帶是具有包含所述特定的成分的黏著層的黏著帶。此處,黏著帶可包含黏著層及基材層。 The adhesive tape of this embodiment is an adhesive tape having an adhesive layer containing the specific component. Here, the adhesive tape may include an adhesive layer and a substrate layer.
例如將構成本實施方式的黏著層的樹脂組成物塗佈於基材(有時亦稱為基底膜等)等上而形成黏著層等,藉此可製成黏著帶。 For example, the resin composition constituting the adhesive layer of the present embodiment is applied to a substrate (sometimes also referred to as a base film, etc.) to form an adhesive layer, thereby making an adhesive tape.
本實施方式的黏著帶的黏著層的厚度較佳為3μm~40μm,更佳為3μm~20μm。於黏著層的厚度為3μm以上時,於密封步驟中有獲得充分的密封性的傾向。另一方面,於厚度為40μm以下時,黏著層亦不會因模具的緊固壓力而受到破壞,有可穩定地製造黏著帶的傾向。 The thickness of the adhesive layer of the adhesive tape of this embodiment is preferably 3μm~40μm, and more preferably 3μm~20μm. When the thickness of the adhesive layer is 3μm or more, there is a tendency to obtain sufficient sealing in the sealing step. On the other hand, when the thickness is 40μm or less, the adhesive layer will not be damaged by the tightening pressure of the mold, and there is a tendency to stably manufacture the adhesive tape.
另一方面,基材層的厚度並無特別限定,就防止折斷或裂開的觀點而言,較佳為5μm以上,就處理性的觀點而言,更佳為10~100μm。 On the other hand, the thickness of the substrate layer is not particularly limited, but is preferably 5 μm or more from the perspective of preventing breakage or cracking, and is more preferably 10 to 100 μm from the perspective of handling.
作為構成基材層的材料,並無特別限定,例如可列舉:聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)系基材、聚醯亞胺(Polyimide,PI)系基材、聚醯胺(Polyamide,PA)系基材、聚萘二甲酸乙二酯(polyethylene naphthalate,PEN)系基材、聚苯硫醚(polyphenylene sulfide,PPS)系基材等。該些中,就耐熱性等觀點而言,較佳為聚醯亞胺系基材。另外,亦可對基 材實施電暈處理或電漿處理等表面改質處理。藉此,可防止基材的經時的物性變化或進行各種表面改質等。 The material constituting the substrate layer is not particularly limited, and examples thereof include polyethylene terephthalate (PET) substrates, polyimide (PI) substrates, polyamide (PA) substrates, polyethylene naphthalate (PEN) substrates, polyphenylene sulfide (PPS) substrates, etc. Among these, polyimide substrates are preferred from the perspective of heat resistance. In addition, the substrate may be subjected to surface modification treatments such as corona treatment or plasma treatment. This can prevent the physical property changes of the substrate over time or perform various surface modifications.
本實施方式的黏著帶可於使用前藉由脫模膜(分離膜)等保護黏著層。藉由預先貼合此種脫模膜,可維持黏著層的黏著力等。作為脫模膜,並無特別限定,亦可適當使用公知者。作為脫模膜,例如可列舉實施了矽酮系脫模處理或氟系脫模處理的聚對苯二甲酸乙二酯膜、聚丙烯膜、聚乙烯膜、脫模紙等。 The adhesive tape of this embodiment can protect the adhesive layer by a release film (separation film) before use. By pre-attaching such a release film, the adhesive force of the adhesive layer can be maintained. There is no particular limitation on the release film, and a known one can be used appropriately. Examples of the release film include polyethylene terephthalate film, polypropylene film, polyethylene film, and release paper that have been subjected to silicone release treatment or fluorine release treatment.
作為本實施方式的黏著帶的製造方法,例如可列舉藉由準備使構成黏著層的樹脂組成物溶解於有機溶媒中而成的溶液並將該溶液塗佈於基材上且使其乾燥等而於基材上形成黏著層的方法等。 As a method for manufacturing the adhesive tape of the present embodiment, for example, there can be cited a method of forming an adhesive layer on a substrate by preparing a solution in which a resin composition constituting the adhesive layer is dissolved in an organic solvent, applying the solution on a substrate, and drying the solution.
作為有機溶媒,例如可列舉:甲醇、乙醇等醇類;乙二醇、丙二醇等二醇類;乙二醇單甲醚、乙二醇單乙醚等二醇單烷基醚類;乙二醇二甲醚、乙二醇二乙醚等二醇二烷基醚;乙酸甲酯、乙酸乙酯、乙酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯等烷基酯類;丙酮、甲基乙基酮、甲基異丁基酮、環己酮等酮類;苯、甲苯、二甲苯、乙基苯等芳香族烴類;己烷、環己烷、辛烷等脂肪族烴類;二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮等醯胺類;四氫呋喃、二噁烷等環狀醚類等。 Examples of organic solvents include: alcohols such as methanol and ethanol; glycols such as ethylene glycol and propylene glycol; glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; glycol dialkyl ethers such as ethylene glycol dimethyl ether and ethylene glycol diethyl ether; alkyl esters such as methyl acetate, ethyl acetate, propyl acetate, methyl acetylacetate, and ethyl acetylacetate; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; aromatic hydrocarbons such as benzene, toluene, xylene, and ethylbenzene; aliphatic hydrocarbons such as hexane, cyclohexane, and octane; amides such as dimethylformamide, dimethylacetamide, and N-methylpyrrolidone; cyclic ethers such as tetrahydrofuran and dioxane, etc.
塗佈方法並無特別限定,亦可採用公知的方法。例如可使用模塗機、缺角輪塗佈機、凹版印刷塗佈機等。 The coating method is not particularly limited, and a known method may be used. For example, a die coater, a notched wheel coater, a gravure printing coater, etc. may be used.
[半導體裝置的製造方法] [Method for manufacturing semiconductor device]
本實施方式的黏著帶是於對電子零件或半導體零件進行樹脂密封時為了遮蔽端子部而黏貼並使用者。 The adhesive tape of this embodiment is affixed and used to cover the terminal portion when performing resin sealing on electronic parts or semiconductor parts.
圖1-1的(a)~圖1-1的(e)是使用本實施方式的黏著帶的半導體裝置的製造方法的一例的步驟圖。如圖1所示,本實施方式的半導體裝置的製造方法至少包括半導體晶片3的搭載步驟及利用密封樹脂5的密封步驟。本實施方式的半導體裝置的製造方法可進而包括切斷被密封的結構物的切割步驟。 Figure 1-1 (a) to Figure 1-1 (e) are step diagrams of an example of a method for manufacturing a semiconductor device using the adhesive tape of the present embodiment. As shown in Figure 1, the method for manufacturing a semiconductor device of the present embodiment includes at least a step of mounting a semiconductor chip 3 and a step of sealing using a sealing resin 5. The method for manufacturing a semiconductor device of the present embodiment may further include a cutting step of cutting the sealed structure.
如圖1-1的(a)~圖1-1的(d)所示,搭載步驟是於引線框架背面側(圖的下側)貼合了黏著帶1的金屬製的引線框架2的晶粒墊上接合半導體晶片3的步驟。 As shown in (a) to (d) of Figure 1-1, the mounting step is a step of bonding a semiconductor chip 3 to a die pad of a metal lead frame 2 to which an adhesive tape 1 is attached on the back side of the lead frame (lower side of the figure).
所謂引線框架2,例如是以銅等金屬為素材且刻有QFN的端子圖案者,於其電接點部分亦有時經銀、鎳、鈀、金等素材被覆(鍍敷)。於使用PPF(Pre-Plated Lead Frame)作為引線框架的情況下,有本發明的效果變得更顯著的傾向。引線框架2的厚度一般為100μm~300μm。再者,部分性地藉由蝕刻等加工得較薄的部分不限於此。引線框架2較佳為各QFN的配置圖案整齊地排列,以便於以後的切斷步驟中容易進行切分。 The so-called lead frame 2 is made of metal such as copper and engraved with a QFN terminal pattern. The electrical contact part is sometimes coated (plated) with materials such as silver, nickel, palladium, and gold. When PPF (Pre-Plated Lead Frame) is used as the lead frame, the effect of the present invention tends to become more significant. The thickness of the lead frame 2 is generally 100μm~300μm. Furthermore, the part that is partially processed to be thinner by etching is not limited to this. The lead frame 2 is preferably arranged neatly with the configuration patterns of each QFN so that it is easy to cut in the subsequent cutting step.
黏著帶1較佳為至少黏貼於封裝圖案區域的外側,黏貼於包括經樹脂密封的樹脂密封區域的外側的整周的區域。引線框架2通常較佳為於端邊附近具有用於進行樹脂密封時的定位的導銷用孔,黏貼於不堵塞導銷用孔的區域。另外,於引線框架2的長邊方向配置有多個樹脂密封區域,因此較佳為以跨越該些多個區域的方式連續地黏貼黏著帶1。 The adhesive tape 1 is preferably at least adhered to the outer side of the packaging pattern area and to the entire circumference of the outer side of the resin sealing area sealed with resin. The lead frame 2 is usually preferably provided with a guide pin hole near the end for positioning during resin sealing, and is adhered to an area that does not block the guide pin hole. In addition, since multiple resin sealing areas are arranged in the long side direction of the lead frame 2, it is preferable to adhere the adhesive tape 1 continuously in a manner that spans these multiple areas.
於如上所述的引線框架2上搭載半導體晶片3、即作為半導體積體電路部分的矽晶圓/晶片。為了固定該半導體晶片3,於引線框架2上設置有被稱為晶粒墊的固定區域,向該晶粒墊的 接合(固定)的方法使用導電性糊,或者可使用接著帶、接著劑等各種方法。於使用導電性糊或熱硬化性接著劑等進行晶粒接合的情況下,一般於150℃~200℃左右的溫度下加熱固化30分鐘~90分鐘左右。為了去除晶粒吸附(Die Attach)材等的污垢,提高線連接性或模具/框架之間的接著性,可對搭載有半導體晶片的引線框架實施圖1-1的(c)所示的電漿處理。 A semiconductor chip 3, i.e., a silicon wafer/chip as a semiconductor integrated circuit part, is mounted on the lead frame 2 as described above. In order to fix the semiconductor chip 3, a fixing area called a die pad is provided on the lead frame 2, and the bonding (fixing) method to the die pad may use a conductive paste, or various methods such as an adhesive tape and an adhesive may be used. When die bonding is performed using a conductive paste or a thermosetting adhesive, it is generally cured by heating at a temperature of about 150°C to 200°C for about 30 minutes to 90 minutes. In order to remove dirt such as die attach materials and improve wire connectivity or the bonding between molds and frames, the lead frame carrying the semiconductor chip may be subjected to plasma treatment as shown in (c) of FIG. 1-1.
一般而言,緊接著進行利用接合線電連接所述引線框架的端子部前端與所述半導體晶片上的電極墊的打線接合步驟。如圖1-1的(d)所示,打線接合步驟是利用接合線4電連接引線框架2的端子部(內部引線)的前端與半導體晶片3上的電極墊的步驟。作為接合線4,例如可使用金線或鋁線等,其中,於使用銅線的情況下,有本發明的效果變得更顯著的傾向。一般而言於加熱至150℃~250℃的狀態下,藉由併用超音波所引起的振動能及施加加壓所引起的壓接能進行接線。此時,藉由真空吸引黏貼於引線框架2的黏著帶1面,可確實地固定於加熱塊(Heater block)。再者,雖然上文示出了朝上安裝半導體晶片來進行接線步驟的情況,但於朝下安裝半導體晶片的情況下,適當地實施回焊步驟。 Generally, a wire bonding step is performed next to electrically connect the front end of the terminal portion of the lead frame and the electrode pad on the semiconductor chip using a bonding wire. As shown in (d) of FIG. 1-1 , the wire bonding step is a step of electrically connecting the front end of the terminal portion (inner lead) of the lead frame 2 and the electrode pad on the semiconductor chip 3 using a bonding wire 4. As the bonding wire 4, for example, a gold wire or an aluminum wire can be used, among which, when a copper wire is used, the effect of the present invention tends to become more significant. Generally, the wire bonding is performed by combining the vibration energy caused by ultrasonic waves and the compression energy caused by applying pressure under heating to 150°C to 250°C. At this time, the adhesive tape 1 surface adhered to the lead frame 2 can be fixed to the heater block securely by vacuum suction. Furthermore, although the above text shows the case where the semiconductor chip is mounted upward to perform the wiring step, the reflow step is appropriately performed when the semiconductor chip is mounted downward.
如圖1-1的(e)所示,密封步驟是藉由密封樹脂5單面密封半導體晶片側的步驟。密封步驟是為了保護搭載於引線框架2的半導體晶片3或接合線4而進行,尤其具代表性的是使用以環氧系的樹脂為代表的密封樹脂且於模具中成型。此時,一般而言使用包含具有多個模穴的上模具及下模具的模具,利用多個密封樹脂5同時進行密封步驟。具體而言,例如樹脂密封時的加熱溫度為170℃~180℃,於該溫度下固化數分鐘後,進而進行數小時 的模塑後固化(post mold cure)。繼密封步驟之後,如圖1-2的(f)所示,剝離貼合於引線框架2的黏著帶。再者,黏著帶1較佳為於模塑後固化之前剝離。 As shown in (e) of FIG. 1-1 , the sealing step is a step of sealing the semiconductor chip side on one side by a sealing resin 5. The sealing step is performed to protect the semiconductor chip 3 or the bonding wire 4 mounted on the lead frame 2. A particularly representative method is to use a sealing resin represented by an epoxy resin and mold it in a mold. At this time, generally speaking, a mold including an upper mold and a lower mold having a plurality of mold cavities is used, and a plurality of sealing resins 5 are used to perform the sealing step simultaneously. Specifically, for example, the heating temperature during resin sealing is 170°C to 180°C, and after curing at this temperature for several minutes, a post-mold cure is performed for several hours. Following the sealing step, as shown in (f) of FIG. 1-2 , the adhesive tape attached to the lead frame 2 is peeled off. Furthermore, the adhesive tape 1 is preferably peeled off after molding and before curing.
如圖1-2的(g)所示,切割步驟是將經密封的結構物切斷成個別的半導體裝置10的步驟。一般而言,可列舉使用切割機等旋轉切斷刀切割密封樹脂5的切斷部的切割步驟。 As shown in (g) of FIG. 1-2 , the cutting step is a step of cutting the sealed structure into individual semiconductor devices 10. Generally speaking, the cutting step can be exemplified by using a rotary cutting blade such as a cutter to cut the cut portion of the sealing resin 5.
再者,本實施方式的黏著帶如上所述可於半導體晶片的搭載步驟之前與引線框架貼合,亦可於半導體晶片的搭載步驟後(打線接合後)、密封步驟前與引線框架貼合,就本發明的效果變得更顯著的觀點而言,較佳為於半導體晶片的搭載步驟前、尤其是打線接合步驟前與引線框架貼合的先黏貼用帶。 Furthermore, the adhesive tape of the present embodiment can be attached to the lead frame before the semiconductor chip mounting step as described above, or can be attached to the lead frame after the semiconductor chip mounting step (after wire bonding) and before the sealing step. From the perspective of making the effect of the present invention more significant, it is preferable to attach the adhesive tape to the lead frame before the semiconductor chip mounting step, especially before the wire bonding step.
[實施例] [Implementation example]
藉由以下的實施例及比較例更詳細地說明本發明,但本發明不受以下實施例的任何限定。 The present invention is described in more detail by the following embodiments and comparative examples, but the present invention is not limited to the following embodiments in any way.
各評價方法及測定方法如下所述。 The evaluation methods and measurement methods are as follows.
<重量平均分子量> <Weight average molecular weight>
使用平均分子量約500~約100萬的標準聚苯乙烯,藉由凝膠滲透層析法(Gel Permeation Chromatography:GPC)進行測定。 Standard polystyrene with an average molecular weight of about 500 to 1 million is used for measurement by gel permeation chromatography (GPC).
<玻璃轉移溫度(Tg)> <Glass transition temperature (Tg)>
藉由示差掃描熱量計(Differential Scanning Calorimeter,DSC)進行測定。 The measurement was carried out by Differential Scanning Calorimeter (DSC).
<儲存彈性係數> <Store elastic coefficient>
製作與黏著帶的黏著層部分為相同組成的厚度100um的片狀樣品,使用動態黏彈性測定裝置(TA儀器(TA Instruments)製 造的RSA-G2)測定儲存彈性係數E'。測定條件是以升溫速度10.0℃/min、溫度範圍-50℃~300℃實施,頻率設為1Hz。25℃、100℃、140℃、175℃及225℃下的儲存彈性係數E'如表1及表2所示。再者,表中「無法測定」是指黏著層部分完全伸長而無法測定。 A sheet sample with a thickness of 100um and the same composition as the adhesive layer of the adhesive tape was prepared, and the storage elastic coefficient E' was measured using a dynamic viscoelasticity measuring device (RSA-G2 manufactured by TA Instruments). The measurement conditions were a heating rate of 10.0℃/min, a temperature range of -50℃~300℃, and a frequency of 1Hz. The storage elastic coefficient E' at 25℃, 100℃, 140℃, 175℃, and 225℃ are shown in Tables 1 and 2. In addition, "cannot be measured" in the table means that the adhesive layer is fully stretched and cannot be measured.
<線連接可靠性> <Line connection reliability>
於在240℃×10sec×10MPa的條件下將黏著帶貼合於引線框架後,使用晶粒吸附材將半導體晶片安裝於引線框架的晶粒墊部,於160℃下加熱30min使晶粒吸附材硬化。然後,於安裝的半導體晶片的電極部與引線框架的電極部使用Φ25μm的銅線(田中貴金屬工業公司製造)進行了打線接合。此時,使用引線接合器(wire bonder)(K&S公司製造),於工作台(stage)溫度200℃、電流值200mA、時間30ms、負荷100g的條件下進行了打線接合。 After attaching the adhesive tape to the lead frame at 240°C×10sec×10MPa, the semiconductor chip was mounted on the die pad of the lead frame using a die adsorbent, and the die adsorbent was hardened by heating at 160°C for 30 minutes. Then, a Φ25μm copper wire (manufactured by Tanaka Kikinzoku Kogyo) was used to bond the electrode of the mounted semiconductor chip to the electrode of the lead frame. At this time, a wire bonder (manufactured by K&S) was used to bond the semiconductor chip at a stage temperature of 200°C, a current of 200mA, a time of 30ms, and a load of 100g.
於打線接合後,目視確認了線是否被正確接入。另外,於線拉力測試中測定引線連接強度。於線被正確接入且線拉力強度為5gf以上的情況下,評價為「○」。另一方面,於線被正確接入但線拉力強度未滿5gf的情況下、或者於線未被正確接入的情況下,評價為「×」。 After wire bonding, visually check whether the wire is connected correctly. In addition, the wire connection strength is measured in the wire pull test. If the wire is connected correctly and the wire pull strength is 5gf or more, the evaluation is "○". On the other hand, if the wire is connected correctly but the wire pull strength is less than 5gf, or if the wire is not connected correctly, the evaluation is "×".
<殘膠> <Residual glue>
於經過所述打線接合步驟後,實施密封。密封材使用日立化成工業製造的CEL-9200HF9,利用轉移模塑裝置於溫度175℃、壓力3MPa、時間90sec的條件下進行密封。然後,於溫度175℃、時間6h下使密封材硬化。然後,剝離帶,使用顯微鏡觀察模具面 及引線框架面是否無殘膠。於無殘膠的情況下評價為「○」,於有殘膠的情況下評價為「×」。 After the wire bonding step, sealing is performed. The sealing material is CEL-9200HF9 manufactured by Hitachi Chemical Industries, Ltd., and the sealing is performed using a transfer molding device at a temperature of 175°C, a pressure of 3MPa, and a time of 90sec. Then, the sealing material is hardened at a temperature of 175°C and a time of 6h. Then, the tape is peeled off and a microscope is used to observe whether there is any residual glue on the mold surface and the lead frame surface. In the case of no residual glue, the evaluation is "○", and in the case of residual glue, the evaluation is "×".
作為實施例及比較例的樹脂組成物中所含的各成分,具體而言使用以下成分。 Specifically, the following components are used as the components contained in the resin composition of the embodiments and comparative examples.
[苯氧基樹脂] [Phenoxy resin]
苯氧基樹脂A:雙酚A/F混合型苯氧基樹脂(三菱化學公司製造,1256B40) Phenoxy resin A: Bisphenol A/F mixed phenoxy resin (manufactured by Mitsubishi Chemical Corporation, 1256B40)
苯氧基樹脂B:雙酚S型苯氧基樹脂(三菱化學公司製造,YX8100BH30) Phenoxy resin B: Bisphenol S type phenoxy resin (manufactured by Mitsubishi Chemical Corporation, YX8100BH30)
[酸酐] [Anhydride]
偏苯三甲酸酐(三菱氣體化學公司製造) Trimellitic anhydride (manufactured by Mitsubishi Gas Chemical Co., Ltd.)
鄰苯二甲酸酐(JFE化學公司製造) Phthalic anhydride (manufactured by JFE Chemicals)
多官能酸酐:5-(2,5-二氧代四氫-3-呋喃基)-3甲基-3-環己烯-1,2-羧酸二酐(DIC公司製造,B-4400) Polyfunctional acid anhydride: 5-(2,5-dioxotetrahydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-carboxylic dianhydride (manufactured by DIC Corporation, B-4400)
[環氧樹脂] [Epoxy resin]
環氧樹脂C:苯酚酚醛清漆型環氧樹脂(環氧當量:210g/eq) Epoxy resin C: phenol novolac type epoxy resin (epoxy equivalent: 210g/eq)
環氧樹脂D:縮水甘油胺型四官能環氧樹脂(環氧當量:100g/eq) Epoxy resin D: Glycidylamine type tetrafunctional epoxy resin (epoxy equivalent: 100g/eq)
[咪唑] [Imidazole]
2-十一烷基咪唑(四國化成工業公司製造,科萊魯(Curezol)C11Z) 2-Undecyl imidazole (produced by Shikoku Chemical Industries, Ltd., Curezol C11Z)
[丙烯酸樹脂] [Acrylic resin]
丙烯酸樹脂E:丙烯酸丁酯-丙烯酸無規共聚物(大成精細化工公司製造,1HY-3006Y,Tg:-53℃) Acrylic resin E: Butyl acrylate-acrylic acid random copolymer (manufactured by Dacheng Fine Chemical Co., Ltd., 1HY-3006Y, Tg: -53℃)
[異氰酸酯] [Isocyanate]
異氰酸酯F:六亞甲基二異氰酸酯(旭化成公司製造,多耐德(Duranate)D201) Isocyanate F: Hexamethylene diisocyanate (manufactured by Asahi Chemical Industry Co., Ltd., Duranate D201)
[實施例1] [Implementation Example 1]
相對於苯氧基樹脂A 100質量份,加入偏苯三甲酸酐(三菱氣體化學公司製造)75質量份、苯酚酚醛清漆型環氧樹脂(三菱化學公司製造,jER152,環氧當量210g/eq)60質量份、2-十一烷基咪唑(四國化成工業公司製造,科萊魯(Curezol)C11Z)0.2質量份,於室溫下攪拌,藉此獲得樹脂組成物。 75 parts by mass of trimellitic anhydride (manufactured by Mitsubishi Gas Chemical Co., Ltd.), 60 parts by mass of phenol novolac epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., jER152, epoxy equivalent 210 g/eq), and 0.2 parts by mass of 2-undecyl imidazole (manufactured by Shikoku Chemical Industries, Ltd., Curezol C11Z) were added to 100 parts by mass of phenoxy resin A, and stirred at room temperature to obtain a resin composition.
於使用模塗機將所得的樹脂組成物以乾燥後的厚度成為6μm的方式塗佈於厚度25μm的聚醯亞胺膜後,於150℃下乾燥5分鐘,藉此獲得黏著帶。 The obtained resin composition was applied to a polyimide film having a thickness of 25 μm using a die coater so that the thickness after drying was 6 μm, and then dried at 150°C for 5 minutes to obtain an adhesive tape.
其次,藉由層壓來將實施了脫模處理的分離膜的脫模面貼合至黏著帶的黏著層,於100℃下加熱100小時,藉此獲得帶脫模膜的黏著帶。 Next, the release surface of the release film that has been subjected to release treatment is bonded to the adhesive layer of the adhesive tape by lamination, and heated at 100°C for 100 hours to obtain an adhesive tape with a release film.
使用所得的黏著帶進行各物性的評價。評價結果如表1所示(表中的含量的單位只要未特別標明,則表示「質量份」)。 The obtained adhesive tape was used to evaluate various physical properties. The evaluation results are shown in Table 1 (the unit of content in the table represents "parts by mass" unless otherwise specified).
[實施例2]~[實施例8] [Example 2]~[Example 8]
除了將形成黏著層的組成物中所含的各成分的種類及含量替換為表1所示的種類及含量以外,藉由與實施例1相同的方法製造黏著帶,進行各物性的評價。 Except that the types and contents of each component contained in the composition forming the adhesive layer were replaced with the types and contents shown in Table 1, the adhesive tape was manufactured by the same method as Example 1, and the various physical properties were evaluated.
[比較例1]~[比較例6] [Comparison Example 1]~[Comparison Example 6]
除了將形成黏著層的組成物中所含的各成分的種類及含量替換為表2所示的種類及含量以外,藉由與實施例1相同的方法製 造黏著帶,進行各物性的評價。 Except that the types and contents of the components contained in the composition forming the adhesive layer were replaced with the types and contents shown in Table 2, the adhesive tape was manufactured by the same method as in Example 1, and the various physical properties were evaluated.
如表1及表2所示,實施例1~實施例8的黏著帶於打 線接合步驟後的線連接可靠性優異。另外,可同時達成抑制帶剝離步驟中的殘膠。 As shown in Table 1 and Table 2, the adhesive tapes of Examples 1 to 8 have excellent wire connection reliability after the wire bonding step. In addition, it can also suppress the residual glue in the tape stripping step.
本申請案是基於2020年3月31日向日本專利局提出申請的日本專利申請(日本專利特願2020-064847)而成者,將其內容作為參照而引入至本申請案中。 This application is based on the Japanese patent application (Japanese Patent Application No. 2020-064847) filed with the Japan Patent Office on March 31, 2020, and the contents are incorporated into this application by reference.
[產業上的可利用性] [Industrial availability]
本發明的黏著帶具有作為半導體裝置的製造中可使用的黏著帶的產業上的可利用性。 The adhesive tape of the present invention has industrial applicability as an adhesive tape that can be used in the manufacture of semiconductor devices.
1:黏著帶 1: Adhesive tape
2:引線框架 2: Lead frame
3:半導體晶片 3: Semiconductor chip
4:接合線 4:Joining line
5:密封樹脂 5: Sealing resin
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020064847A JP7572792B2 (en) | 2020-03-31 | 2020-03-31 | Adhesive tape |
| JP2020-064847 | 2020-03-31 |
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| Publication Number | Publication Date |
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| TW202138516A TW202138516A (en) | 2021-10-16 |
| TWI861382B true TWI861382B (en) | 2024-11-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110111676A TWI861382B (en) | 2020-03-31 | 2021-03-30 | Adhesive tape |
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| Country | Link |
|---|---|
| JP (1) | JP7572792B2 (en) |
| CN (1) | CN114945645B (en) |
| PH (1) | PH12022552127A1 (en) |
| TW (1) | TWI861382B (en) |
| WO (1) | WO2021200405A1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015218287A (en) * | 2014-05-19 | 2015-12-07 | 古河電気工業株式会社 | Adhesive film-integrated surface protection tape for use in grinding thin film, and method for manufacturing semiconductor chip |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011168672A (en) * | 2010-02-17 | 2011-09-01 | Sekisui Chem Co Ltd | Insulation sheet |
| KR101395322B1 (en) * | 2012-07-18 | 2014-05-16 | 도레이첨단소재 주식회사 | Adhesive composition having improved reliability at high voltage condition and adhesive tape for semiconductor packaging using the same |
| JP2016011427A (en) * | 2015-09-07 | 2016-01-21 | 古河電気工業株式会社 | Adhesive film, tape for wafer processing and method for producing adhesive film |
| MY192601A (en) * | 2016-03-31 | 2022-08-29 | Furukawa Electric Co Ltd | Tape for electronic device packaging |
| JP7211715B2 (en) * | 2017-05-31 | 2023-01-24 | 積水化学工業株式会社 | Curable resin composition, cured product, adhesive, adhesive film, coverlay film, and printed wiring board |
-
2020
- 2020-03-31 JP JP2020064847A patent/JP7572792B2/en active Active
-
2021
- 2021-03-23 WO PCT/JP2021/012044 patent/WO2021200405A1/en not_active Ceased
- 2021-03-23 PH PH1/2022/552127A patent/PH12022552127A1/en unknown
- 2021-03-23 CN CN202180009377.1A patent/CN114945645B/en active Active
- 2021-03-30 TW TW110111676A patent/TWI861382B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015218287A (en) * | 2014-05-19 | 2015-12-07 | 古河電気工業株式会社 | Adhesive film-integrated surface protection tape for use in grinding thin film, and method for manufacturing semiconductor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114945645B (en) | 2024-12-13 |
| WO2021200405A1 (en) | 2021-10-07 |
| CN114945645A (en) | 2022-08-26 |
| PH12022552127A1 (en) | 2024-01-29 |
| JP2021161274A (en) | 2021-10-11 |
| TW202138516A (en) | 2021-10-16 |
| JP7572792B2 (en) | 2024-10-24 |
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