TWI854391B - Wafer inspection method and device thereof - Google Patents
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Abstract
Description
本發明係有關於半導體檢測裝置,尤指一種晶圓檢測方法及其裝置。The present invention relates to a semiconductor testing device, and more particularly to a wafer testing method and a device thereof.
傳統半導體製程的標準瑕疵檢測由作業人員以肉眼檢測方式對晶圓表面進行外觀檢測並判讀缺陷時,容易發生誤判的情況。對此,現行晶圓檢測裝置大多採用自動光學檢測(Automated Optical Inspection,AOI)來自動化進行瑕疵檢測。In the traditional semiconductor process, standard defect detection is performed by operators visually inspecting the wafer surface and judging defects, which is prone to misjudgment. In response to this, most current wafer inspection devices use automated optical inspection (AOI) to automate defect detection.
再者,如圖1所示,自動光學檢測設備是在平台10a上設置晶圓座20a,另對應晶圓座20a安裝有攝影模組30a及光源40a。當晶圓被機械手臂移載至晶圓座20a後,光源40a會照射晶圓的表面,並透過攝影模組拍攝晶圓表面,藉以擷取影像來判別晶圓表面是否存在瑕疵。Furthermore, as shown in FIG1 , the automatic optical inspection equipment is provided with a
然而,前述晶圓檢測裝置用於檢測晶圓的正面是否有瑕疵,若需要同時對檢測晶圓反面進行檢測時,則需透過晶圓座20a的旋轉來完成檢測。惟晶圓座20a的旋轉會產生震動對晶圓造成損壞的機率越高,且翻轉過程中的光影容易造成誤判的情況。此外,晶圓座20a的旋轉運作會延長檢測時間,導致檢測速度變慢。However, the aforementioned wafer inspection device is used to inspect whether there are defects on the front side of the wafer. If it is necessary to inspect the back side of the wafer at the same time, the inspection must be completed by rotating the
本發明之一目的,在於提供一種晶圓檢測方法及其裝置,以縮短檢測時間,避免對晶圓造成損毀而提高良率。One purpose of the present invention is to provide a wafer inspection method and device to shorten the inspection time, avoid damage to the wafer and improve the yield.
為了達成上述之目的,本發明係為一種晶圓檢測方法,步驟包括: a) 提供一晶圓裝置,包括承載晶圓的一載台、設置在載台一側的一機器手臂、具有一取像平面的一工作台、設置在工作台上並能夠移動至該取像平面位置處的一檢測座、對應取像平面位置設置的一光源群及對應光源群設置的複數攝像機;b) 移動機器手臂並夾取晶圓至該檢測座;c) 移動檢測座至取像平面位置;d) 啟動光源群及該些攝像機,照明取像平面位置並擷取晶圓巨觀影像;e) 對晶圓巨觀影像進行巨觀分析;f) 移動檢測座至載台的一側;以及g) 移動機器手臂,並夾取晶圓至載台。In order to achieve the above-mentioned purpose, the present invention is a wafer inspection method, which includes the following steps: a) providing a wafer device, including a carrier for carrying wafers, a robot arm arranged on one side of the carrier, a workbench with an imaging plane, a detection seat arranged on the workbench and capable of moving to the imaging plane position, a light source group arranged corresponding to the imaging plane position, and a plurality of cameras arranged corresponding to the light source group; b) moving the robot arm and clamping the wafer to the detection seat; c) moving the detection seat to the imaging plane position; d) starting the light source group and the cameras to illuminate the imaging plane position and capture a wafer macroscopic image; e) performing a macroscopic analysis on the wafer macroscopic image; f) moving the detection seat to one side of the carrier; and g) moving the robot arm and clamping the wafer to the carrier.
為了達成上述之目的,本發明係為一種晶圓檢測裝置,包括載台、機器手臂、工作台、檢測座、光源群及複數攝像機。載台用以承載晶圓。機器手臂設置在載台的一側,機器手臂用以夾持並移動晶圓。工作台設置在機器手臂的一側並具有取像平面。檢測座可移動地設置在工作台上並能夠移動至取像平面位置處,檢測座包含承載晶圓的活動台。光源群對應取像平面位置設置在工作台上,光源群包含分離設置的第一光源、第二光源及第三光源,第三光源與取像平面呈垂直設置,第一光源具有一第一照射方向,該第一照射方向相對於取像位置的水平方向具有第一光源夾角,第二光源具有一第二照射方向,該第二照射方向相對於取像位置的水平方向具有第二光源夾角,第一、第二光源夾角的範圍設置為不小於5度且不大於80度。複數攝像機包含設置在第三光源兩側的第一攝像機及第二攝像機,第一攝像機與第三光源設置呈第一攝影夾角,第二攝像機與第三光源設置呈第二攝影夾角,第一、第二攝影夾角的範圍設置為不小於0度且不大於60度。In order to achieve the above-mentioned purpose, the present invention is a wafer inspection device, including a carrier, a machine arm, a workbench, a detection seat, a light source group and a plurality of cameras. The carrier is used to carry the wafer. The machine arm is arranged on one side of the carrier, and the machine arm is used to clamp and move the wafer. The workbench is arranged on one side of the machine arm and has an imaging plane. The detection seat is movably arranged on the workbench and can be moved to the imaging plane position, and the detection seat includes a movable table for carrying the wafer. The light source group is arranged on the workbench corresponding to the imaging plane position, and the light source group includes a first light source, a second light source and a third light source which are separately arranged. The third light source is arranged perpendicular to the imaging plane. The first light source has a first irradiation direction, and the first irradiation direction has a first light source angle relative to the horizontal direction of the imaging position. The second light source has a second irradiation direction, and the second irradiation direction has a second light source angle relative to the horizontal direction of the imaging position. The range of the first and second light source angles is set to be not less than 5 degrees and not more than 80 degrees. The plurality of cameras includes a first camera and a second camera arranged on both sides of the third light source. The first camera and the third light source are arranged at a first photographic angle, and the second camera and the third light source are arranged at a second photographic angle. The range of the first and second photographic angles is set to be not less than 0 degrees and not more than 60 degrees.
相較於習知,本發明之晶圓檢測方法係先提供一晶圓裝置,設置光源群包含分離設置的第一光源、第二光源及第三光源,第三光源與取像平面呈垂直設置,第一、第二光源相對於取像位置的水平方向具有第一、第二光源夾角,且第一、第二光源夾角的範圍設置為不小於5度且不大於80度,另外設置第一、第二攝像機與第三光源設置的攝影夾角範圍設置為不小於0度且不大於60度,據此避免陰影出現在擷取的晶圓巨觀影像上而進行分析,透過巨觀檢測(Macro Inspection)判別晶圓是否存在瑕疵;又,本發明之晶圓檢測過程中不需對晶圓作翻旋即可獲取清晰的影像,故能減少檢測時間並降低誤判的可能性;再者,由於本發明的檢測過程不需透過機器手臂夾取晶圓作翻旋,可使晶圓保持在平面狀態及避免損傷晶圓,減少對晶圓造成損毀而提高良率。Compared to the prior art, the wafer inspection method of the present invention first provides a wafer device, and sets a light source group including a first light source, a second light source and a third light source which are separately set. The third light source is set perpendicular to the imaging plane. The first and second light sources have a first and second light source angle relative to the horizontal direction of the imaging position, and the range of the first and second light source angle is set to be not less than 5 degrees and not more than 80 degrees. In addition, the range of the photography angle of the first and second cameras and the third light source is set to be not less than 0 degrees and not more than 60 degrees, thereby avoiding shadows from appearing on the captured wafer macro image for analysis, and through macroscopic inspection (Macro Furthermore, the wafer inspection process of the present invention does not need to rotate the wafer to obtain a clear image, thereby reducing the inspection time and the possibility of misjudgment. Furthermore, since the inspection process of the present invention does not need to rotate the wafer by a machine arm, the wafer can be kept in a flat state and the wafer can be avoided from being damaged, thereby reducing damage to the wafer and improving the yield.
有關本發明之詳細說明及技術內容,配合圖式說明如下,然而所附圖式僅提供參考與說明用,並非用來對本發明加以限制者。The detailed description and technical contents of the present invention are described below with reference to the accompanying drawings. However, the accompanying drawings are only provided for reference and description and are not intended to limit the present invention.
請參照圖2及圖3,其係為本發明之晶圓檢測裝置的平面示意圖及側視圖。本發明係為一種晶圓檢測裝置1,包括一載台10、一機器手臂20、一工作台30、一檢測座40、一光源群50及複數攝像機60。該載台10係用以承載待測晶圓2及完成檢測之晶圓2。該機器手臂20設置在該載台10及該工作台30之間,用以夾取該載台10上的待測晶圓2至該工作台30,並夾取在該工作台30完成檢測之晶圓以放回該載台10。又,該光源群50及複數攝像機60安裝在該工作台30,用以擷取該待測晶圓2的影像以進行檢測。Please refer to Figures 2 and 3, which are a plan view and a side view of the wafer inspection device of the present invention. The present invention is a
該機器手臂20設置在該載台10的一側。該機器手臂20具有一Y型夾頭21,用以夾持並移動該晶圓2。The robot arm 20 is disposed on one side of the carrier 10. The robot arm 20 has a Y-shaped clamp 21 for clamping and moving the wafer 2.
該工作台30設置在該機器手臂20的一側並具有一取像平面31。又,該檢測座40可移動地設置在該工作台30上2並移動至該取像平面31位置處。較佳地,該檢測座40包含可承載該晶圓2的一活動台41,該活動台41係設置為能夠相對該檢測座40作升降及旋轉,以利於對活動台41上的晶圓2進行影像擷取作業。The workbench 30 is disposed on one side of the robot arm 20 and has an imaging plane 31. Moreover, the detection seat 40 is movably disposed on the workbench 30 and moved to the imaging plane 31. Preferably, the detection seat 40 includes a movable table 41 capable of carrying the wafer 2, and the movable table 41 is configured to be able to be lifted and rotated relative to the detection seat 40, so as to facilitate the image capture operation of the wafer 2 on the movable table 41.
該光源群50對應該取像平面31位置設置在該工作台30上。該光源群50包含分離設置的一第一光源51、一第二光源52及一第三光源53。該第三光源53與該取像平面31呈垂直設置。該第一光源51及該第二光源52為輔助光。該第一光源51具有一第一照射方向L1,該第一照射方向L1相對於該取像位置31的水平方向具有一第一光源夾角A1。另外,該第二光源52具有一第二照射方向L2,該第二照射方向L2相對於該取像位置31的水平方向具有一第二光源夾角A2。該第一光源夾角A1及該第二光源夾角A2的角度設置範圍為不小於5度且不大於80度,且該第一、第二光源夾角A1、A2的範圍不一定相同。The light source group 50 is arranged on the workbench 30 corresponding to the position of the imaging plane 31. The light source group 50 includes a first light source 51, a second light source 52 and a third light source 53 which are separately arranged. The third light source 53 is arranged perpendicular to the imaging plane 31. The first light source 51 and the second light source 52 are auxiliary lights. The first light source 51 has a first irradiation direction L1, and the first irradiation direction L1 has a first light source angle A1 relative to the horizontal direction of the imaging position 31. In addition, the second light source 52 has a second irradiation direction L2, and the second irradiation direction L2 has a second light source angle A2 relative to the horizontal direction of the imaging position 31. The angle setting range of the first light source angle A1 and the second light source angle A2 is not less than 5 degrees and not more than 80 degrees, and the ranges of the first and second light source angles A1 and A2 are not necessarily the same.
具體而言,該光源群50設置在該工作台30上遠離該載台10的一側。此外,該光源群50包含至少二種線性光源,如環形光(Ring Light)、同軸光(Coaxial Light)、條光(Bar Light)、泛光(Flat Light)、RGB光、聚光(Spot Light)、紫外線光(UV Light)或紅外線光(IR Light)等。Specifically, the light source group 50 is disposed on a side of the workbench 30 away from the carrier 10. In addition, the light source group 50 includes at least two linear light sources, such as ring light, coaxial light, bar light, flat light, RGB light, spot light, ultraviolet light, or infrared light.
要說明的是,該第一光源夾角A1及該第二光源夾角A2的角度設置可依實際狀況如晶圓尺寸等設計參數而加以調整所需的照明,進而獲取清晰的影像。It should be noted that the angles of the first light source angle A1 and the second light source angle A2 can be adjusted according to actual conditions such as design parameters such as wafer size to obtain the required illumination, thereby obtaining a clear image.
複數攝像機60包含分離設置一第一攝像機61及一第二攝像機62。此外,該第一攝像機61設置與該第三光源53呈一第一攝影夾角B1,該第二攝像機62設置與該第三光源53呈一第二攝影夾角B2。該第一攝影夾角B1及該第二攝影夾角B2的角度設置範圍為不小於0度且不大於60度,且該第一攝影夾角B1及該第二攝影夾角B2的角度範圍不一定相同。The plurality of cameras 60 includes a first camera 61 and a second camera 62 which are separately arranged. In addition, the first camera 61 is arranged at a first camera angle B1 with the third light source 53, and the second camera 62 is arranged at a second camera angle B2 with the third light source 53. The angle setting range of the first camera angle B1 and the second camera angle B2 is not less than 0 degrees and not more than 60 degrees, and the angle ranges of the first camera angle B1 and the second camera angle B2 are not necessarily the same.
值得注意的是,該第一攝像機61及該第二攝像機62可設置在該第三光源53的周圍,且只需設置符合該第一攝影夾角B1及該第二攝影夾角B2的角度設置範圍即可。It is worth noting that the first camera 61 and the second camera 62 can be disposed around the third light source 53 and only need to be disposed within the angle setting range that conforms to the first photographing angle B1 and the second photographing angle B2.
要說明的是,該第一攝影夾角B1及該第二攝影夾角B2的角度設置可依實際狀況如晶圓薄膜厚度等設計參數而加以調整。此外,該些攝像機60可包含面型掃描(Area Scan)攝像機、線型掃描(Line Scan)攝像機或3D攝像機(3D Camera)等。It should be noted that the angles of the first camera angle B1 and the second camera angle B2 can be adjusted according to actual conditions such as wafer film thickness and other design parameters. In addition, the cameras 60 can include area scan cameras, line scan cameras or 3D cameras.
實際使用時,該第一光源51及該第二光源52可呈對稱設置。另外,該第一光源51相對於該第一攝像機61的角度及該第二光源52相對於該第二攝像機62的角度可設置為不同。In actual use, the first light source 51 and the second light source 52 can be symmetrically arranged. In addition, the angle of the first light source 51 relative to the first camera 61 and the angle of the second light source 52 relative to the second camera 62 can be set to be different.
另外要說明的是,本發明透過選擇該光源群50的光源型態及調整該些攝像機60的角度設置而避免陰影出現在該晶圓2上,故能精準地擷取該晶圓2的影像而進行分析,以進行巨觀檢測(Macro Inspection)並判別該晶圓2是否存在瑕疵。因此,本發明之晶圓檢測裝置1不需透過對該晶圓2作翻旋即可獲取清晰的影像。It should also be noted that the present invention avoids shadows on the wafer 2 by selecting the light source type of the light source group 50 and adjusting the angle settings of the cameras 60, so that the image of the wafer 2 can be accurately captured and analyzed to perform macro inspection and determine whether the wafer 2 has defects. Therefore, the
較佳地,在一使用狀況下,該第一攝影夾角B1及該第二攝影夾角B2的角度可設置為10度,另配合該第一攝影夾角B1及該第二攝影夾角B2的角度係設置為25度。又,在另一使用狀況下,該第一攝影夾角B1及該第二攝影夾角B2的角度可設置為15度,另配合該第一攝影夾角B1及該第二攝影夾角B2的角度設置為30度,據此提供符合使用者需求的晶圓檢測裝置1。Preferably, in one use condition, the angle of the first photographing angle B1 and the second photographing angle B2 can be set to 10 degrees, and the angle of the first photographing angle B1 and the second photographing angle B2 is set to 25 degrees. In another use condition, the angle of the first photographing angle B1 and the second photographing angle B2 can be set to 15 degrees, and the angle of the first photographing angle B1 and the second photographing angle B2 is set to 30 degrees, thereby providing a
於本實施例中,該晶圓檢測裝置1更包括一底側攝像機70及一底側光源72,且該底側攝像機70可疊置在該底側光源72上。又,該活動台41的底側係對應設置有一開口410。據此,在該底側光源72的照射下,該底側攝像機70可經由該開口410來對該晶圓2的反面作影像擷取並進行檢測。In this embodiment, the
要說明的是,該底側攝像機70及該底側光源72的數量及位置並不限制,並可視實際使用狀況而加以調整。It should be noted that the number and position of the bottom camera 70 and the bottom light source 72 are not limited and can be adjusted according to actual usage conditions.
據此,本發明之晶圓檢測裝置1可實施一種晶圓檢測方法,步驟包括: a) 提供一晶圓裝置1,包括承載晶圓2的一載台10、設置在該載台10一側的一機器手臂20、具有一取像平面31的一工作台30、設置在該工作台30上並能夠移動至該取像平面31位置處的一檢測座40、對應該取像平面31位置設置的一光源群50及對應該光源群50設置的複數攝像機60;b) 移動該機器手臂20並夾取該晶圓2至該檢測座40;c) 移動該檢測座40至該取像平面31位置;d) 啟動該光源群50及該些攝像機60,照明該取像平面31位置並擷取晶圓巨觀影像;e) 對晶圓巨觀影像進行巨觀分析;f) 移動該檢測座40至該載台10的一側;以及g) 移動該機器手臂20,並夾取該晶圓2至該載台10。Accordingly, the
於本發明的一實施例中,該晶圓檢測裝置1更包括用於進行微觀檢測(Micro Inspection)的一微觀攝像機80及一微觀光源81。該微觀攝像機80及該微觀光源81設置在該工作台30上接近該載台10的一側。In an embodiment of the present invention, the
據此,本發明之晶圓檢測方法更包括啟動該微觀攝像機80及一微觀光源81,以擷取晶圓微觀影像並進行微觀分析。Accordingly, the wafer inspection method of the present invention further includes activating the microscopic camera 80 and a microscopic light source 81 to capture wafer microscopic images and perform microscopic analysis.
值得注意的是,實際使用時,本發明之晶圓檢測裝置1可依客戶需求而在不同區域加裝光源,以提高檢測的精準度。It is worth noting that, in actual use, the
請另參照圖4至圖7,其係為本發明之晶圓檢測裝置進行巨觀檢測流程的動作示意圖。請參照圖4及圖5,本發明之晶圓檢測裝置1進行檢測時,該機器手臂20先從該載台10上夾取待檢測的一晶圓2,並將該晶圓2移至該檢測座40並定位。再參照圖6及圖7,放置有該晶圓2的檢測座40可經由一輸送帶作運輸而移動至該取像平面31位置,並進行影像擷取。於本實施例中,該取像平面31位置係位於該第三光源53的正下方,此位置係為本發明進行巨觀檢測的影像擷取區。Please also refer to Figures 4 to 7, which are schematic diagrams of the operation of the wafer inspection device of the present invention for performing a macroscopic inspection process. Please refer to Figures 4 and 5, when the
請續參照圖8至圖10,其係為本發明之晶圓檢測裝置進行微觀檢測流程的動作示意圖。請參照圖8,本發明之晶圓檢測裝置1進行微觀檢測時,承載該晶圓2的檢測座40會從該取像平面31位置(巨觀檢測區)移動至微觀檢測區32。於本實施例中,該微觀檢測區32即該微觀攝像機80及該微觀光源81的設置處,並位於該工作台30上接近該載台10的一側。Please continue to refer to Figures 8 to 10, which are schematic diagrams of the microscopic inspection process of the wafer inspection device of the present invention. Please refer to Figure 8, when the
請續參照圖9,在進行微觀檢測時,承載有該晶圓2的活動台41可從該檢測座40中伸出及旋轉,以利該微觀攝像機80擷取特定位置的影像。再請參照圖10,待該微觀攝像機80完成影像擷取後,該活動台41再降入該檢測座40中的原來位置,並令該晶圓2定位在該檢測座40中。Please continue to refer to FIG9 . During microscopic inspection, the movable table 41 carrying the wafer 2 can be extended from the inspection seat 40 and rotated to facilitate the microscopic camera 80 to capture images of specific positions. Please refer to FIG10 . After the microscopic camera 80 completes image capture, the movable table 41 is lowered to its original position in the inspection seat 40 , and the wafer 2 is positioned in the inspection seat 40 .
請再參照圖11及圖12,其係為本發明之晶圓檢測裝置完成檢測流程的動作示意圖。如圖11所示,當該晶圓2完成檢測作業後,該機器手臂20會夾取該檢測座40上的晶圓2。再請參照圖12,最後,該機器手臂20將該晶圓2移至該載台10上已完成檢測的位置。據此,該晶圓檢測裝置1完成對該晶圓2進行巨觀及微觀的檢測。Please refer to Figures 11 and 12, which are schematic diagrams of the wafer inspection device of the present invention completing the inspection process. As shown in Figure 11, when the wafer 2 completes the inspection operation, the robot arm 20 will clamp the wafer 2 on the inspection seat 40. Please refer to Figure 12 again, finally, the robot arm 20 moves the wafer 2 to the position on the carrier 10 where the inspection has been completed. Accordingly, the
以上所述僅為本發明之較佳實施例,非用以定本發明之專利範圍,其他運用本發明之專利精神之等效變化,均應俱屬本發明之專利範圍。The above description is only a preferred embodiment of the present invention and is not intended to define the patent scope of the present invention. Other equivalent variations that utilize the patent spirit of the present invention should all fall within the patent scope of the present invention.
10a:平台
20a:晶圓座
30a:攝影模組
40a:光源
1:晶圓檢測裝置
10:載台
20:機器手臂
21:Y型夾頭
30:工作台
31:取像平面
32:微觀檢測區
40:檢測座
41:活動台
410:開口
50:光源群
51:第一光源
52:第二光源
53:第三光源
60:攝像機
61:第一攝像機
62:第二攝像機
70:底側攝像機
72:底側光源
80:微觀攝像機
81:微觀光源
L1:第一照射方向
L2:第二照射方向
A1:第一光源夾角
A2:第二光源夾角
B1:第一攝影夾角
B2:第二攝影夾角
10a:
圖1 係傳統晶圓檢測裝置的動作示意圖。FIG1 is a schematic diagram showing the operation of a conventional wafer inspection device.
圖2 係本發明之晶圓檢測裝置的平面示意圖。FIG. 2 is a schematic plan view of the wafer inspection device of the present invention.
圖3 係本發明之晶圓檢測裝置的側視圖。FIG. 3 is a side view of the wafer inspection device of the present invention.
圖4至圖7係為本發明之晶圓檢測裝置進行巨觀檢測流程的動作示意圖。4 to 7 are schematic diagrams showing the operation of the wafer inspection device of the present invention in performing a macroscopic inspection process.
圖8至圖10係為本發明之晶圓檢測裝置進行微觀檢測流程的動作示意圖。8 to 10 are schematic diagrams showing the operation of the wafer inspection device of the present invention in performing a microscopic inspection process.
圖11至圖12係為本發明之晶圓檢測裝置完成檢測流程的動作示意圖。11 to 12 are schematic diagrams showing the operation of the wafer inspection device of the present invention to complete the inspection process.
1:晶圓檢測裝置 1: Wafer inspection device
20:機器手臂 20: Robotic arm
21:Y型夾頭 21: Y-type clamp
30:工作台 30: Workbench
31:取像平面 31: Imaging plane
32:微觀檢測區 32: Microscopic detection area
40:檢測座 40: Detection seat
41:活動台 41: Activity table
410:開口 410: Open mouth
50:光源群 50: Light source group
51:第一光源 51: The first light source
52:第二光源 52: Second light source
53:第三光源 53: The third light source
60:攝像機 60: Camera
61:第一攝像機 61: First Camera
62:第二攝像機 62: Second camera
70:底側攝像機 70: Bottom camera
72:底側光源 72: Bottom light source
80:微觀攝像機 80: Micro camera
81:微觀光源 81: Microscopic light source
L1:第一照射方向 L1: First irradiation direction
L2:第二照射方向 L2: Second irradiation direction
A1:第一光源夾角 A1: Angle of the first light source
A2:第二光源夾角 A2: Second light source angle
B1:第一攝影夾角 B1: First camera angle
B2:第二攝影夾角 B2: Second photography angle
Claims (6)
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| TW111147488A TWI854391B (en) | 2022-12-09 | 2022-12-09 | Wafer inspection method and device thereof |
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| US20060072807A1 (en) * | 2000-09-20 | 2006-04-06 | Kla-Tencor Technologies. | Methods and systems for determining a presence of macro and micro defects on a specimen |
| US20080204738A1 (en) * | 2007-02-28 | 2008-08-28 | Vistec Semiconductor Systems Gmbh | Method for acquiring high-resolution images of defects on the upper surface of the wafer edge |
| US20120276664A1 (en) * | 2011-04-28 | 2012-11-01 | Lars Markwort | Methods of inspecting and manufacturing semiconductor wafers |
| TW201911453A (en) * | 2017-07-31 | 2019-03-16 | 台灣積體電路製造股份有限公司 | Processing tool and its operating method |
| TW202210820A (en) * | 2020-09-09 | 2022-03-16 | 旺矽科技股份有限公司 | Macro and micro inspection apparatus and inspection method |
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| US20060072807A1 (en) * | 2000-09-20 | 2006-04-06 | Kla-Tencor Technologies. | Methods and systems for determining a presence of macro and micro defects on a specimen |
| US20080204738A1 (en) * | 2007-02-28 | 2008-08-28 | Vistec Semiconductor Systems Gmbh | Method for acquiring high-resolution images of defects on the upper surface of the wafer edge |
| US20120276664A1 (en) * | 2011-04-28 | 2012-11-01 | Lars Markwort | Methods of inspecting and manufacturing semiconductor wafers |
| TW201248755A (en) * | 2011-04-28 | 2012-12-01 | Nanda Technologies Gmbh | Methods of inspecting and manufacturing semiconductor wafers |
| TW201911453A (en) * | 2017-07-31 | 2019-03-16 | 台灣積體電路製造股份有限公司 | Processing tool and its operating method |
| TW202210820A (en) * | 2020-09-09 | 2022-03-16 | 旺矽科技股份有限公司 | Macro and micro inspection apparatus and inspection method |
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