TWI847971B - Synthetic lined crucible assembly for czochralski crystal growth - Google Patents
Synthetic lined crucible assembly for czochralski crystal growth Download PDFInfo
- Publication number
- TWI847971B TWI847971B TW107147618A TW107147618A TWI847971B TW I847971 B TWI847971 B TW I847971B TW 107147618 A TW107147618 A TW 107147618A TW 107147618 A TW107147618 A TW 107147618A TW I847971 B TWI847971 B TW I847971B
- Authority
- TW
- Taiwan
- Prior art keywords
- shell
- silicon dioxide
- liner
- synthetic silicon
- synthetic
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 292
- 238000000034 method Methods 0.000 claims abstract description 166
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 126
- 238000005266 casting Methods 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 91
- 239000012535 impurity Substances 0.000 claims description 66
- 239000011248 coating agent Substances 0.000 claims description 48
- 238000000576 coating method Methods 0.000 claims description 48
- 238000007751 thermal spraying Methods 0.000 claims description 35
- 239000007921 spray Substances 0.000 claims description 30
- 238000005507 spraying Methods 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 26
- 239000002002 slurry Substances 0.000 claims description 26
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 19
- 238000001746 injection moulding Methods 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000002826 coolant Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Inorganic materials [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 claims description 3
- ZOMBKNNSYQHRCA-UHFFFAOYSA-J calcium sulfate hemihydrate Chemical compound O.[Ca+2].[Ca+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O ZOMBKNNSYQHRCA-UHFFFAOYSA-J 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims description 3
- 239000011507 gypsum plaster Substances 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 description 43
- 230000008569 process Effects 0.000 description 29
- 238000001816 cooling Methods 0.000 description 26
- 239000000463 material Substances 0.000 description 24
- 239000000155 melt Substances 0.000 description 21
- 239000004576 sand Substances 0.000 description 19
- 239000010453 quartz Substances 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 238000012805 post-processing Methods 0.000 description 10
- 238000002203 pretreatment Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000000446 fuel Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- 238000007750 plasma spraying Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007569 slipcasting Methods 0.000 description 4
- 239000006004 Quartz sand Substances 0.000 description 3
- 239000000567 combustion gas Substances 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000010286 high velocity air fuel Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000007500 overflow downdraw method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 2
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005474 detonation Methods 0.000 description 2
- 238000010283 detonation spraying Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000003505 polymerization initiator Substances 0.000 description 2
- 238000007582 slurry-cast process Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/22—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc
- B05B7/222—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc using an arc
- B05B7/226—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc using an arc the material being originally a particulate material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
- C03B19/066—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/12—Other methods of shaping glass by liquid-phase reaction processes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
- C03C1/006—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels to produce glass through wet route
- C03C1/008—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels to produce glass through wet route for the production of films or coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B33/00—Clay-wares
- C04B33/28—Slip casting
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
- C04B2235/6023—Gel casting
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
- C04B2235/6027—Slip casting
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/606—Drying
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Structural Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
本發明大體上係關於用於生產太陽能級或半導體材料之錠的系統及方法,且更特定言之,係關於包括用於此類系統及方法中之合成襯料的坩堝組件。The present invention relates generally to systems and methods for producing ingots of solar grade or semiconductor materials, and more particularly to crucible assemblies including synthetic linings for use in such systems and methods.
結晶矽太陽能電池當前貢獻光伏打(PV)模組總供應之大部分。在標準柴可斯基(Czochralski) (CZ)方法中,首先在諸如石英坩堝之坩堝中熔融多晶矽以形成矽熔融物。接著將預定定向之晶種降低以與熔融物接觸且緩慢抽出。藉由控制溫度,晶種熔融物界面處之矽熔融物固化至具有與晶種之定向相同定向的晶種上。使晶種接著自熔融物緩慢升起以形成成長晶體錠。在被稱作分批CZ (BCZ)之習知CZ方法中,在該方法開始時熔融使矽錠成長所需之全部量之裝料材料,自單一坩堝裝料拉製晶體以實質上耗乏坩堝,且接著丟棄石英坩堝。在一個爐循環中經濟地補給石英坩堝以用於多次拉製之另一方法為連續CZ (CCZ)。在CCZ中,隨著晶體成長,固體或液體原料被連續或定期地添加至熔融物中且因此使熔融物維持恆定體積。除了將坩堝成本攤在若干錠上之外,CCZ方法亦沿成長方向提供優良的晶體均一性。Crystalline silicon solar cells currently contribute a large portion of the total supply of photovoltaic (PV) modules. In the standard Czochralski (CZ) process, polycrystalline silicon is first melted in a crucible such as a quartz crucible to form a silicon melt. A seed crystal of a predetermined orientation is then lowered into contact with the melt and slowly withdrawn. By controlling the temperature, the silicon melt at the seed-melt interface solidifies onto the seed crystal having the same orientation as the seed crystal. The seed crystal is then slowly raised from the melt to form a growing crystal ingot. In the known CZ process, known as batch CZ (BCZ), the entire amount of charge material required to grow a silicon ingot is melted at the beginning of the process, crystals are pulled from a single crucible charge to substantially deplete the crucible, and the quartz crucible is then discarded. Another method of economically replenishing a quartz crucible for multiple pulls in one furnace cycle is continuous CZ (CCZ). In CCZ, solid or liquid feedstock is continuously or periodically added to the melt as the crystal grows and thereby maintaining the melt at a constant volume. In addition to spreading the crucible cost over several ingots, the CCZ process also provides excellent crystal uniformity along the growth direction.
由較低級別天然二氧化矽形成之澆鑄之二氧化矽坩堝一般不用於基於柴可斯基之方法(CZ、BCZ及CCZ方法)中,因為較低級別天然二氧化矽具有高的總雜質含量。相反地,澆鑄之坩堝或多二氧化矽澆鑄之坩堝由於較高的總雜質含量而通常被用於製造多結晶二氧化矽光伏打電池。較低級別天然二氧化矽之較高總雜質含量來自二氧化矽中天然存在之雜質且來自在澆鑄方法期間添加至二氧化矽中以使二氧化矽黏結成澆鑄之坩堝形式的雜質。澆鑄之坩堝之較高總雜質含量增加自坩堝至熔融物中以及至最終產物中的雜質貢獻。Cast silica crucibles formed from lower grade natural silica are generally not used in Czochralski-based processes (CZ, BCZ and CCZ processes) because lower grade natural silica has a high total impurity content. In contrast, cast crucibles or polysilica cast crucibles are typically used to make polycrystalline silica photovoltaic cells due to the higher total impurity content. The higher total impurity content of lower grade natural silica comes from impurities naturally present in the silica and from impurities added to the silica during the casting process to bond the silica into the cast crucible form. A higher total impurity content of the cast crucible increases the impurity contribution from the crucible into the melt and into the final product.
相比而言,用於基於柴可斯基之方法(諸如電弧熔合之坩堝)中的坩堝係由較高級別、較昂貴的天然二氧化矽形成,該等坩堝相比於由較低級別天然二氧化矽形成之澆鑄的坩堝具有較低的總雜質含量。由此等坩堝形成之錠之雜質含量比由澆鑄之坩堝形成的錠低。因此,存在對用於基於柴可斯基之方法中之較低成本坩堝的需求,該坩堝降低來自坩堝之雜質貢獻。In contrast, crucibles used in Czochralski-based processes (such as arc-fused crucibles) are formed from higher grade, more expensive natural silicon dioxide, which have lower overall impurity content than cast crucibles formed from lower grade natural silicon dioxide. Ingots formed from such crucibles have lower impurity content than ingots formed from cast crucibles. Therefore, there is a need for lower cost crucibles for use in Czochralski-based processes that reduce the impurity contribution from the crucible.
另外,用於基於柴可斯基之方法中的已知坩堝遇到的問題為設計靈活性有限,且坩堝壽命有限。因此,存在對用於基於柴可斯基之方法之坩堝的需求,該坩堝具有改良之設計靈活性及改良之坩堝壽命,例如,以延長爐循環之長度。In addition, known crucibles used in Czakowski-based methods suffer from limited design flexibility and limited crucible life. Therefore, there is a need for a crucible for use in Czakowski-based methods having improved design flexibility and improved crucible life, for example, to extend the length of a furnace cycle.
此先前技術部分意欲向讀者介紹可能相關於本發明之各種態樣的各種態樣,在下文中描述及/或主張該等態樣。咸信此論述有助於為讀者提供背景資訊,以促進對本發明之各態樣的較佳理解。因此,應理解,此等陳述應鑒於此來閱讀,而非作為對先前技術之認可。This prior art section is intended to introduce the reader to various aspects that may be related to the various aspects of the present invention, which are described and/or claimed below. It is believed that this discussion helps to provide the reader with background information to promote a better understanding of the various aspects of the present invention. Therefore, it should be understood that these statements should be read in this light and not as an admission of prior art.
第一態樣為一種製造具有殼體及襯裡之坩堝組件之方法。該方法包括使用澆鑄方法來形成該殼體。該殼體包括二氧化矽且具有內表面及外表面。該方法亦包括在該殼體之該內表面上形成該襯裡。該襯裡係由合成二氧化矽形成。The first aspect is a method of manufacturing a crucible assembly having a shell and a liner. The method includes forming the shell using a casting method. The shell includes silicon dioxide and has an inner surface and an outer surface. The method also includes forming the liner on the inner surface of the shell. The liner is formed of synthetic silicon dioxide.
另一態樣為一種用於使用柴可斯基方法來使晶體錠成長之坩堝組件。坩堝組件包括殼體及襯裡。殼體由二氧化矽形成且具有內表面及與內表面相對之外表面。襯裡係由合成二氧化矽形成且形成於殼體之內表面上。襯裡為熱噴塗之襯裡且該殼體為澆鑄之殼體。Another aspect is a crucible assembly for growing a crystal ingot using the Czochralski method. The crucible assembly includes a shell and a liner. The shell is formed of silicon dioxide and has an inner surface and an outer surface opposite to the inner surface. The liner is formed of synthetic silicon dioxide and is formed on the inner surface of the shell. The liner is a thermal sprayed liner and the shell is a cast shell.
存在關於上文所提及之態樣所提及之特徵的各種改進。亦可將進一步特徵同樣併入於上文所提及之態樣中。此等改進及額外特徵可單獨地或以任何組合存在。舉例而言,可將下文關於所說明之實施例中之任一者論述的各種特徵單獨地或以任何組合形式併入至上文所描述之態樣中之任一者中。There are various improvements of the features mentioned in relation to the above-mentioned aspects. Further features may also be incorporated into the above-mentioned aspects. Such improvements and additional features may exist alone or in any combination. For example, various features discussed below with respect to any of the illustrated embodiments may be incorporated into any of the above-described aspects alone or in any combination.
本申請案主張2017年12月29日申請之美國臨時專利申請案第62/611,758號之權益,該美國臨時專利申請案係以全文引用之方式併入本文中。This application claims the benefit of U.S. Provisional Patent Application No. 62/611,758, filed on December 29, 2017, which is incorporated herein by reference in its entirety.
現參看圖1,一個實例實施例之坩堝組件100包括殼體110及安置於殼體110內之襯裡120,使得僅襯裡120接觸熔融物。殼體110係由相對較低級別天然二氧化矽使用澆鑄方法製得,且襯裡120係由相對較高級別天然或合成二氧化矽使用熱噴塗方法製得。較高級別天然或合成二氧化矽比較低級別天然二氧化矽貢獻少的雜質至熔融物,且比較低級別天然二氧化矽昂貴。相比於完全由較高級別天然或合成二氧化矽形成之坩堝組件,此提供降低之坩堝組件100之總成本,同時維持及/或改良熔融物之品質。Referring now to FIG. 1 , a crucible assembly 100 of an example embodiment includes a shell 110 and a liner 120 disposed within the shell 110 such that only the liner 120 contacts the melt. The shell 110 is made of relatively low-grade natural silica using a casting method, and the liner 120 is made of relatively high-grade natural or synthetic silica using a thermal spraying method. The high-grade natural or synthetic silica contributes less impurities to the melt than the low-grade natural silica, and is more expensive than the low-grade natural silica. This provides for reduced overall cost of the crucible assembly 100, while maintaining and/or improving melt quality, compared to crucible assemblies formed entirely from higher grade natural or synthetic silica.
在實例坩堝組件100中,殼體110具有內表面122及外表面124且襯裡120亦具有內表面126及外表面128。襯裡120形成於殼體110之內表面122上,使得襯裡120之外表面128相符殼體110之內表面122。襯裡120係由超高純度天然砂粒或合成石英製成,而包括殼體110及外表面124之坩堝組件100之剩餘部分係由較低純度材料製成。熔融物材料熔融於由襯裡120界定之成長區130內且僅接觸襯裡120之內表面126。如此,襯裡120防止熔融物接觸殼體110內之較低純度材料且提高熔融物之品質。In the example crucible assembly 100, the shell 110 has an inner surface 122 and an outer surface 124 and the liner 120 also has an inner surface 126 and an outer surface 128. The liner 120 is formed on the inner surface 122 of the shell 110 so that the outer surface 128 of the liner 120 conforms to the inner surface 122 of the shell 110. The liner 120 is made of ultra-high purity natural sand or synthetic quartz, and the remainder of the crucible assembly 100 including the shell 110 and the outer surface 124 is made of a lower purity material. The melt material melts within the growth zone 130 defined by the liner 120 and contacts only the inner surface 126 of the liner 120. Thus, the liner 120 prevents the melt from contacting the lower purity material in the housing 110 and improves the quality of the melt.
殼體110及襯裡120為碗形且襯裡120熱噴塗於殼體110內。坩堝組件100具有在襯裡120之內表面126之間伸展的直徑132。在一些實施例中,直徑132為至少二十吋、小於四十吋、在二十四吋與三十二吋之間、在二十八吋與三十四吋之間或在三十吋與三十六吋之間。The shell 110 and liner 120 are bowl-shaped and the liner 120 is heat-sprayed inside the shell 110. The crucible assembly 100 has a diameter 132 extending between the inner surface 126 of the liner 120. In some embodiments, the diameter 132 is at least twenty inches, less than forty inches, between twenty-four inches and thirty-two inches, between twenty-eight inches and thirty-four inches, or between thirty inches and thirty-six inches.
圖1中所說明之坩堝組件100係由第一形成殼體110藉由澆鑄方法或非澆鑄方法形成。接著,襯裡120藉由熱噴塗方法形成於殼體110之內表面122上。澆鑄方法包括注漿成型方法及注膠成型方法且非澆鑄方法包括電弧熔合方法。在本發明實施例中,殼體110係由注漿成型方法形成。然而,在替代實施例中,可由注膠成型方法或電弧熔合方法形成殼體110。The crucible assembly 100 illustrated in FIG. 1 is formed by a first forming shell 110 by a casting method or a non-casting method. Then, a liner 120 is formed on an inner surface 122 of the shell 110 by a thermal spraying method. Casting methods include a grouting molding method and a glue injection molding method and non-casting methods include an arc fusion method. In an embodiment of the present invention, the shell 110 is formed by a grouting molding method. However, in an alternative embodiment, the shell 110 may be formed by a glue injection molding method or an arc fusion method.
在所說明之實施例中,殼體110適當地為注漿成型之殼體,但可為另一類型之澆鑄之殼體或坩堝。適用於形成澆鑄之坩堝的澆鑄方法通常包括將液體或半液體化合物傾入至模具中,且藉由自化合物移除水分來允許化合物固化。用以形成澆鑄之殼體110之化合物可包括例如且不限於陶瓷粉末,諸如二氧化矽粉末之含水漿料。用於形成澆鑄之坩堝之適合的澆鑄方法包括例如且不限於注漿成型及注膠成型。注漿成型包括使用已知為漿之陶瓷粉末(例如,二氧化矽)的含水漿料。可將陶瓷粉末與分散劑、黏合劑、水及/或其他組分混合。將漿及/或漿混合物(例如,漿料)傾入至模具中。舉例而言,模具適當地由熟石膏(例如,CaSO4 :2H2 O)製得。來自漿料之水開始藉由毛細作用(或藉助於真空乾燥)移出,且塊狀物沿模具壁構建。當達至乾燥之塊狀物之所需厚度時,將漿料之其餘部分自模具傾出。將陶瓷生坯接著自模具移出、乾燥且燃燒。燃燒方法包括在二氧化矽之情況下高溫下燒結或熔合。最終產物在室溫下係不透明的,但可視燒結條件及溫度而定而為透明。In the illustrated embodiment, the shell 110 is suitably a cast shell, but may be another type of cast shell or crucible. Casting methods suitable for forming cast crucibles typically include pouring a liquid or semi-liquid compound into a mold and allowing the compound to solidify by removing water from the compound. The compound used to form the cast shell 110 may include, for example and without limitation, an aqueous slurry of ceramic powders, such as silica powder. Suitable casting methods for forming cast crucibles include, for example and without limitation, cast molding and glue injection molding. Cast molding includes using an aqueous slurry of a ceramic powder (e.g., silica) known as a slurry. The ceramic powder may be mixed with a dispersant, a binder, water and/or other components. The paste and/or paste mixture (e.g., slurry) is poured into a mold. For example, the mold is suitably made of plaster of Paris (e.g., CaSO 4 :2H 2 O). Water from the slurry begins to be removed by capillary action (or with the aid of vacuum drying), and the block is built along the mold wall. When the desired thickness of the dried block is reached, the remainder of the slurry is poured out of the mold. The ceramic green body is then removed from the mold, dried and fired. The firing method includes sintering or fusing at high temperature in the case of silicon dioxide. The final product is opaque at room temperature, but can become transparent depending on the sintering conditions and temperature.
在一替代性實施例中,殼體110係使用注膠成型方法或其他澆鑄方法製得。在注膠成型方法中,陶瓷粉末(例如,天然砂粒、合成石英或SiO2 )經研磨及/或與水、分散劑及膠凝有機單體混合。將混合物置放於部分真空下以自混合物移除空氣。此增加乾燥速率及/或減少注膠成型之產物中氣泡之形成。將催化劑(例如,聚合引發劑)添加至混合物中。聚合引發劑在混合物內開始膠凝化學反應。漿料混合物係藉由將混合物傾入至用於產生產物(例如,坩堝)之所需形狀之模具中來澆鑄。模具可由例如金屬、玻璃、塑膠、蠟或其他材料製得。凝膠係藉由在固化烘箱中加熱模具及漿料混合物而自漿料混合物產生。熱及催化劑致使混合物中之單體形成交聯聚合物,其捕集混合物中之水以使聚合物-水凝膠變大。凝膠黏結且固定凝膠內之陶瓷粒子。將陶瓷自模具移出。乾燥陶瓷。可機械加工乾燥之陶瓷以進一步使陶瓷成形。燒製陶瓷以燒掉陶瓷內之聚合物且燒結陶瓷粒子。在其他替代性實施例中,使用其他澆鑄、機械加工或生產方法以製得殼體110。In an alternative embodiment, the shell 110 is made using an injection molding method or other casting method. In the injection molding method, ceramic powder (e.g., natural sand, synthetic quartz or SiO2 ) is ground and/or mixed with water, a dispersant and a gelling organic monomer. The mixture is placed under a partial vacuum to remove air from the mixture. This increases the drying rate and/or reduces the formation of bubbles in the injection molded product. A catalyst (e.g., a polymerization initiator) is added to the mixture. The polymerization initiator starts a gelling chemical reaction in the mixture. The slurry mixture is cast by pouring the mixture into a mold of the desired shape for producing the product (e.g., a crucible). The mold can be made of, for example, metal, glass, plastic, wax or other materials. The gel is produced from the slurry mixture by heating the mold and slurry mixture in a curing oven. The heat and catalyst cause the monomers in the mixture to form cross-linked polymers, which trap water in the mixture to enlarge the polymer-water gel. The gel bonds and fixes the ceramic particles in the gel. The ceramic is removed from the mold. The ceramic is dried. The dried ceramic can be machined to further shape the ceramic. The ceramic is fired to burn out the polymer in the ceramic and to sinter the ceramic particles. In other alternative embodiments, other casting, machining or production methods are used to make the shell 110.
在另一替代實施例中,殼體110由非澆鑄方法形成。舉例而言,殼體110係使用電弧熔合方法形成。該方法一般包括用電弧熔合前驅體材料(例如,高純度石英砂)。在一個實施例中,殼體110係藉由將高純度石英砂傾入至旋轉模具中,且接著使用由兩個或更多個石墨電極產生之電弧來自內部向外熔合而形成。將高純度石英砂定義為含有不超過百萬分之30重量(ppmw)之雜質之砂粒。高純度石英之工業標準係由由Spruce Pine, North Carolina, US處之Unimin Corporation開採出售為IOTA的產品定義,該產品充當高純度石英市場之高純度基準。在此實施例中,高純度石英砂具有不超過20 ppmw之總雜質含量。模具可包括真空孔,經由該等真空孔將捕集於砂粒粒子之間的空氣以及在熔合方法期間產生之氣態物種移除,以便避免最終電弧熔合之坩堝中之氣泡形成。在室溫下,視氣泡密度而定,所得電弧熔合之坩堝為實質上透明或半透明的。In another alternative embodiment, the shell 110 is formed by a non-casting method. For example, the shell 110 is formed using an arc fusion method. The method generally includes fusing a precursor material (e.g., high purity silica sand) with an arc. In one embodiment, the shell 110 is formed by pouring high purity silica sand into a rotating mold and then fusing it from the inside out using an arc generated by two or more graphite electrodes. High purity silica sand is defined as sand containing no more than 30 parts per million by weight (ppmw) of impurities. The industry standard for high purity quartz is defined by the product mined and sold as IOTA by Unimin Corporation of Spruce Pine, North Carolina, US, which serves as the high purity benchmark for the high purity quartz market. In this embodiment, the high purity quartz sand has a total impurity content of no more than 20 ppmw. The mold may include vacuum holes through which air trapped between the sand particles and gaseous species generated during the fusion process are removed in order to avoid bubble formation in the final arc-fused crucible. At room temperature, the resulting arc-fused crucible is substantially transparent or translucent, depending on the bubble density.
在本發明實施例中,相比於電弧熔合之坩堝,殼體110係使用注漿成型方法或另一類型之澆鑄方法而形成,以降低坩堝成本。相比於電弧熔合方法,注漿成型方法或其他類型之澆鑄方法為殼體110提供較低成本之設計變化(且提高設計靈活性),因為使用注漿成型方法製造之坩堝係由較便宜的較低級別天然二氧化矽,而非較昂貴的較高級別天然或合成二氧化矽製成。另外,注漿成型製造製程比電弧熔合製造製程便宜,因為電弧熔合製造製程之操作溫度顯著高於注漿成型製造製程且需要特殊設備以達成較高的操作溫度。因此,在坩堝組件100中使用注漿成型或以其它方式澆鑄之坩堝作為殼體110降低坩堝組件100之成本。In an embodiment of the present invention, the shell 110 is formed using a grouting process or another type of casting process to reduce the cost of the crucible, as compared to an arc-fused crucible. The grouting process or another type of casting process provides lower cost design variations (and increased design flexibility) for the shell 110 as compared to the arc-fused process, because the crucible manufactured using the grouting process is made of cheaper, lower grade natural silicon dioxide, rather than more expensive, higher grade natural or synthetic silicon dioxide. In addition, the grouting manufacturing process is less expensive than the arc-fused manufacturing process, as the operating temperature of the arc-fused manufacturing process is significantly higher than the grouting manufacturing process and special equipment is required to achieve the higher operating temperature. Therefore, using a crucible that is cast by injection molding or other methods as the shell 110 in the crucible assembly 100 reduces the cost of the crucible assembly 100 .
使用注漿成型方法或其他澆鑄方法形成之殼體110之密度可大於二氧化矽注漿成型之坩堝的最大理論密度的百分之九十至百分之九十五。由注漿成型方法形成且由二氧化矽製得之殼體110具有與由其他方法形成之坩堝(諸如非晶電弧熔合之坩堝)類似的熱衝擊抗性特性。與通常透明或半透明之其他類型之坩堝(諸如熱電弧日熔合之坩堝或熱噴塗之坩堝)相比,此實施例之澆鑄之坩堝在室溫下為不透明的。應注意,其他實施例之澆鑄之坩堝可為透明的,例如視用於燒製澆鑄之坩堝之燒結條件而定。與其他類型之坩堝相比,諸如電弧熔合之坩堝,澆鑄之坩堝歸因於與透明或半透明電弧熔合之坩堝相比減少的通過不透明澆鑄之坩堝的紅外線透射而通常需要額外輸入電力及時間以熔融其中所含之材料。然而,相比於電弧熔合之坩堝,澆鑄之坩堝之紅外線透射減少可導致溶化後之熔融物的較少輻射熱損失。結果,與電弧熔合之坩堝相比,澆鑄之坩堝在整個操作中之總功率消耗可能不會變化。澆鑄之坩堝之溶解速率低於電弧熔合之坩堝之溶解速率。The density of the shell 110 formed using the slip casting method or other casting methods can be greater than 90% to 95% of the maximum theoretical density of the silicon dioxide slip casting crucible. The shell 110 formed by the slip casting method and made of silicon dioxide has similar thermal shock resistance characteristics as crucibles formed by other methods (such as amorphous arc fused crucibles). Compared with other types of crucibles (such as hot arc fused crucibles or thermal sprayed crucibles) that are generally transparent or translucent, the cast crucible of this embodiment is opaque at room temperature. It should be noted that the cast crucible of other embodiments may be transparent, for example, depending on the sintering conditions used to fire the cast crucible. Compared to other types of crucibles, such as arc-fused crucibles, cast crucibles generally require additional input power and time to melt the material contained therein due to reduced infrared transmission through the opaque cast crucible compared to transparent or translucent arc-fused crucibles. However, the reduced infrared transmission of the cast crucible can result in less radiant heat loss of the melt after melting compared to arc-fused crucibles. As a result, the total power consumption of a cast crucible may not change throughout the operation compared to an arc-fused crucible. The dissolution rate of a cast crucible is lower than that of an arc-fused crucible.
另外,相比於熱噴塗襯裡,注漿成型之坩堝通常具有較高的雜質含量。澆鑄之坩堝之高雜質含量可源自用以粉末化熔融二氧化矽原料之球磨研磨介質、用以產生澆鑄之坩堝之模具材料及雜質及黏合劑及分散劑。注漿成型之坩堝包括由較低級別天然二氧化矽形成之實質上均一材料之壁,其包括較高的雜質含量。此與由超高純度天然砂粒或合成石英製成之熱噴塗襯裡形成對比,該等材料之雜質含量通常實質上低於注漿成型之坩堝。Additionally, slip cast crucibles typically have a higher impurity content than thermal spray liners. The high impurity content of cast crucibles can result from the ball mill grinding media used to powderize the molten silica feedstock, the mold material used to produce the cast crucible, and impurities and binders and dispersants. Slip cast crucibles include walls of substantially uniform material formed from lower grade natural silica, which include a higher impurity content. This is in contrast to thermal spray liners made from ultra-high purity natural sand or synthetic quartz, which typically have substantially lower impurity contents than slip cast crucibles.
一般而言,殼體110包括比熱噴塗之襯裡高的雜質量。此為用以製得坩堝之注漿成型方法或其他澆鑄方法之結果。在替代實施例中,由注漿成型方法或其他澆鑄方法形成之殼體110具有低雜質量。舉例而言,殼體110具有百萬分之20重量或更少之雜質。諸如鋁之雜質對晶體中之低注入少數載子壽命具有顯著影響且較低由晶體製成之太陽能電池的效率。高純度澆鑄之殼體110減少雜質且產生更高效的太陽能電池。Generally, the shell 110 includes a higher impurity level than a thermal sprayed liner. This is a result of the slurry casting process or other casting process used to make the crucible. In an alternative embodiment, the shell 110 formed by the slurry casting process or other casting process has a low impurity level. For example, the shell 110 has 20 parts per million by weight or less of impurities. Impurities such as aluminum have a significant impact on the low implanted minority carrier lifetime in the crystal and reduce the efficiency of the solar cell made from the crystal. The high purity cast shell 110 reduces impurities and produces a more efficient solar cell.
由較低級別天然二氧化矽形成之澆鑄的二氧化矽坩堝(諸如殼體110)一般不用於基於柴可斯基之方法中,因為較低級別天然二氧化矽具有高的總雜質含量。低級天然二氧化矽通常被開採且具有99重量%二氧化矽與1重量%雜質。由於較高的總雜質含量,澆鑄之坩堝或多二氧化矽澆鑄之坩堝通常被用於製造多結晶二氧化矽光伏打電池。較高的總雜質含量來自天然存在之雜質且來自在澆鑄方法期間添加至二氧化矽中以使二氧化矽黏結成澆鑄之坩堝形式的雜質。天然二氧化矽之較高總雜質含量增加自坩堝至熔融物中以及至最終產物中的雜質貢獻。澆鑄之坩堝或多二氧化矽澆鑄之坩堝通常為不透明的且具有正方形底部。相比而言,較高級別天然二氧化矽通常為具有足夠低雜質含量之精製較低級別天然二氧化矽,使得其可用以形成用於基於柴可斯基之方法中的坩堝。由較高級別天然或合成二氧化矽製成且用於基於柴可斯基之方法中之坩堝通常為半透明或透明的且具有碗形底部。Cast silica crucibles (such as shell 110) formed from lower grade natural silica are generally not used in Czakowski-based processes because lower grade natural silica has a high total impurity content. Low grade natural silica is typically mined and has 99% by weight silica and 1% by weight impurities. Due to the higher total impurity content, cast crucibles or polysilica cast crucibles are typically used to make polycrystalline silica photovoltaic cells. The higher total impurity content comes from naturally occurring impurities and from impurities added to the silica during the casting process to bond the silica into the cast crucible form. The higher total impurity content of natural silica increases the impurity contribution from the crucible to the melt and to the final product. Cast crucibles or polysilica cast crucibles are typically opaque and have a square bottom. In contrast, higher grade natural silica is typically a refined lower grade natural silica with a sufficiently low impurity content so that it can be used to form a crucible for use in a Czochralski-based process. Crucibles made from higher grade natural or synthetic silica and used in a Czochralski-based process are typically translucent or transparent and have a bowl-shaped bottom.
在一些實施例中,澆鑄之殼體110具有大於50 ppmw、大於100 ppmw、大於200 ppmw、在50 ppmw與1,000 ppmw之間、在50 ppmw與500 ppmw之間、在100 ppmw與1,000 ppmw之間、在100 ppmw與500 ppmw之間、在100 ppmw與400 ppmw之間、在200 ppmw與300 ppmw之間、大於1000 ppmw之雜質含量,或大於由超高純度天然砂粒或合成石英製成之熱噴塗襯裡之雜質含量的其他雜質含量(例如,具有小於0.13 ppmw之雜質含量)。在殼體110之總雜質含量中量測或考慮之雜質的實例包括例如Al、B、Ba、Ca、Cr、Cu、Fe、K、Li、Mg、Mn、Na、Ni、P、Ti、Zn及Zr。舉例而言,殼體110可具有具有以下特定雜質含量之小於230 ppmw的總雜質含量及:100 ppmw Al、1 ppmw B、10 ppmw Ba、20 ppmw Ca、小於1 ppmw Cu、20 ppmw Fe、15 ppmw K、10 ppmw Li、9 ppmw Mg、23 ppmw Mn、10 ppmw Na、10 ppmw Ti及小於1 ppmw Zr。In some embodiments, the cast shell 110 has an impurity content greater than 50 ppmw, greater than 100 ppmw, greater than 200 ppmw, between 50 ppmw and 1,000 ppmw, between 50 ppmw and 500 ppmw, between 100 ppmw and 1,000 ppmw, between 100 ppmw and 500 ppmw, between 100 ppmw and 400 ppmw, between 200 ppmw and 300 ppmw, greater than 1000 ppmw, or other impurity content greater than the impurity content of thermal spray linings made from ultra-high purity natural sand or synthetic quartz (e.g., having an impurity content less than 0.13 ppmw). Examples of impurities measured or considered in the total impurity content of the shell 110 include, for example, Al, B, Ba, Ca, Cr, Cu, Fe, K, Li, Mg, Mn, Na, Ni, P, Ti, Zn, and Zr. For example, the shell 110 may have a total impurity content of less than 230 ppmw and have the following specific impurity contents: 100 ppmw Al, 1 ppmw B, 10 ppmw Ba, 20 ppmw Ca, less than 1 ppmw Cu, 20 ppmw Fe, 15 ppmw K, 10 ppmw Li, 9 ppmw Mg, 23 ppmw Mn, 10 ppmw Na, 10 ppmw Ti, and less than 1 ppmw Zr.
相比而言,由本發明之熱噴塗較高級別天然或合成二氧化矽形成之襯裡可具有小於注漿成型殼體110之雜質含量的雜質含量,諸如小於50 ppmw、小於30 ppmw、小於20 ppmw、小於15 ppmw、小於10 ppmw、小於1 ppmw、小於0.5 ppmw、在0.01 ppmw與50 ppmw之間、在0.01 ppmw與30 ppmw之間、在0.01 ppmw與20 ppmw之間、在5 ppmw與50 ppmw之間、在10 ppmw與30 ppmw之間或小於注漿成型坩堝之雜質含量的其他雜質含量。舉例而言,較高級別天然或合成二氧化矽襯裡可具有具有以下特定雜質含量之小於5 ppmw、小於4 ppmw、小於3 ppmw、小於2 ppmw、小於1 ppmw或小於0.13 ppmw之總雜質含量:0.01 ppmw Al、小於0.01 ppmw B、0.01 ppmw Ca、0.01 ppmw Cr、0.01 ppmw Cu、0.02 ppmw Fe、0.01 ppmw K、0.01 ppmw Li、0.01 ppmw Mg、0.01 ppmw Mn、0.01 ppmw Na、0.01 ppmw Ni、小於0.01 ppmw P、0.01 ppmw Ti及0.01 ppmw Zn。在其他實施例中,熱噴塗之襯裡具有各種總雜質含量、各種特定雜質含量及/或其他類型之雜質。In contrast, a liner formed from the thermally sprayed higher grade natural or synthetic silica of the present invention may have an impurity content that is less than the impurity content of the slip cast shell 110, such as less than 50 ppmw, less than 30 ppmw, less than 20 ppmw, less than 15 ppmw, less than 10 ppmw, less than 1 ppmw, less than 0.5 ppmw, between 0.01 ppmw and 50 ppmw, between 0.01 ppmw and 30 ppmw, between 0.01 ppmw and 20 ppmw, between 5 ppmw and 50 ppmw, between 10 ppmw and 30 ppmw, or other impurity content that is less than the impurity content of the slip cast crucible. For example, a higher grade natural or synthetic silica lining may have a total impurity content of less than 5 ppmw, less than 4 ppmw, less than 3 ppmw, less than 2 ppmw, less than 1 ppmw, or less than 0.13 ppmw with the following specific impurity levels: 0.01 ppmw Al, less than 0.01 ppmw B, 0.01 ppmw Ca, 0.01 ppmw Cr, 0.01 ppmw Cu, 0.02 ppmw Fe, 0.01 ppmw K, 0.01 ppmw Li, 0.01 ppmw Mg, 0.01 ppmw Mn, 0.01 ppmw Na, 0.01 ppmw Ni, less than 0.01 ppmw P, 0.01 ppmw Ti, and 0.01 ppmw Zn. In other embodiments, the thermally sprayed liner has various total impurity levels, various specific impurity levels, and/or other types of impurities.
自成長區130拉製由柴可斯基方法產生之晶體錠。成長區130在襯裡120之內表面126內延伸。在操作中,含於襯裡120及殼體110內之熔融物逐漸溶解襯裡120之內表面126。此溶解反應將材料自襯裡120之內表面126引入至熔融物中且將雜質引入至熔融物中。然而,因為襯裡120由較高級別天然或合成二氧化矽形成,實質上無雜質自襯裡120之內表面126引入。坩堝組件100藉由防止至少一些雜質進入成長區130且藉由防止彼等雜質被併入至晶體錠中來產生較高純度晶體錠。坩堝組件100得益於由澆鑄之殼體110提供的增加之設計靈活性、降低之成本及增加之坩堝壽命,同時減少澆鑄之殼體110中雜質的影響。A crystalline ingot produced by the Czakowski process is pulled from a growth zone 130. The growth zone 130 extends within the inner surface 126 of the liner 120. In operation, the melt contained within the liner 120 and the shell 110 gradually dissolves the inner surface 126 of the liner 120. This dissolution reaction introduces material from the inner surface 126 of the liner 120 into the melt and introduces impurities into the melt. However, because the liner 120 is formed of a higher grade natural or synthetic silicon dioxide, substantially no impurities are introduced from the inner surface 126 of the liner 120. The crucible assembly 100 produces a higher purity crystalline ingot by preventing at least some impurities from entering the growth zone 130 and by preventing those impurities from being incorporated into the crystalline ingot. The crucible assembly 100 benefits from the increased design flexibility, reduced cost, and increased crucible life provided by the cast shell 110 while reducing the effects of impurities in the cast shell 110.
現參看圖2,流程圖說明用於使用注漿成型方法來製得用於圖1中示出之坩堝組件100中之坩堝的實例方法200。此及/或其他方法被用以製得殼體110。方法200一般包括將二氧化矽與其他組分混合202以形成漿、將漿澆鑄204至模具中、乾燥206漿及/或模具以形成生坯、自模具移出208生坯、燒製210生坯及冷卻212生坯。2, a flow chart illustrates an example method 200 for using a slip casting process to make a crucible for use in the crucible assembly 100 shown in FIG1. This and/or other methods are used to make the shell 110. The method 200 generally includes mixing 202 silicon dioxide with other components to form a slurry, pouring 204 the slurry into a mold, drying 206 the slurry and/or the mold to form a green body, removing 208 the green body from the mold, firing 210 the green body, and cooling 212 the green body.
將二氧化矽及其他組分混合202以形成漿之步驟包括將二氧化矽與分散劑、黏合劑及/或水混合以形成漿。經混合之二氧化矽可為經濕式研磨之熔融二氧化矽。將漿澆鑄204至模具中包括將漿混合物傾入至模具中。模具通常由熟石膏製得。在使用注膠成型而非注漿成型之實施例中,模具為例如不鏽鋼。乾燥206漿及/或模具以形成生坯之步驟包括在存在或不存在真空乾燥輔助之情況下經由毛細作用將水自漿料移出。生坯為未燒製成形之粉末形式。在對漿進行乾燥期間,乾燥塊狀物沿模具壁形成。當達至乾燥之塊狀物之所需厚度時,將剩餘液體漿料傾出。燒製210生坯包括高溫下燒結或熔合乾燥之塊狀物,例如,乾燥之塊狀物內的二氧化矽。The step of mixing 202 the silica and other components to form a slurry includes mixing the silica with a dispersant, a binder and/or water to form a slurry. The mixed silica can be wet-ground molten silica. Casting 204 the slurry into a mold includes pouring the slurry mixture into the mold. The mold is typically made of plaster of Paris. In an embodiment using injection molding rather than injection molding, the mold is, for example, stainless steel. The step of drying 206 the slurry and/or mold to form a green body includes removing water from the slurry by capillary action with or without the assistance of vacuum drying. The green body is in the form of a powder that has not been fired and formed. During the drying of the slurry, dry lumps are formed along the walls of the mold. When the desired thickness of the dried cake is reached, the remaining liquid slurry is poured out. Firing 210 the green body includes sintering or fusing the dried cake, for example, silicon dioxide within the dried cake, at a high temperature.
襯裡120為由熱噴塗方法形成之熱噴塗之襯裡。該方法一般包括將液體或半液體化合物噴塗至殼體110上,且允許化合物固化於殼體110之內表面122上。在一個實施例中,襯裡120係藉由熔融較高級別天然或合成二氧化矽或高純度石英砂且將熔融之較高級別天然或合成二氧化矽噴塗於殼體110之內表面122上來形成。將高純度石英砂定義為含有不超過30 ppmw之雜質之砂粒。高純度石英之工業標準係由由Spruce Pine, North Carolina, US處之Unimin Corporation開採、出售為IOTA的產品定義,該產品充當高純度石英市場之高純度基準。在此實施例中,較高級別天然或合成二氧化矽或合成石英具有不超過0.13 ppmw之總雜質含量。在一些實施例中,較高級別天然或合成二氧化矽或合成石英具有小於5 ppmw、小於4 ppmw、小於3 ppmw、小於2 ppmw、小於1 ppmw或小於或等於0.13 ppmw之總雜質含量。The liner 120 is a thermally sprayed liner formed by a thermal spraying method. The method generally includes spraying a liquid or semi-liquid compound onto the shell 110 and allowing the compound to solidify on the inner surface 122 of the shell 110. In one embodiment, the liner 120 is formed by melting higher-grade natural or synthetic silica or high-purity quartz sand and spraying the molten higher-grade natural or synthetic silica on the inner surface 122 of the shell 110. High-purity quartz sand is defined as sand particles containing no more than 30 ppmw of impurities. The industry standard for high purity quartz is defined by the product mined and sold as IOTA by Unimin Corporation of Spruce Pine, North Carolina, US, which serves as the high purity benchmark for the high purity quartz market. In this embodiment, the higher grade natural or synthetic silica or synthetic quartz has a total impurity content of no more than 0.13 ppmw. In some embodiments, the higher grade natural or synthetic silica or synthetic quartz has a total impurity content of less than 5 ppmw, less than 4 ppmw, less than 3 ppmw, less than 2 ppmw, less than 1 ppmw, or less than or equal to 0.13 ppmw.
在分批或再裝料柴可斯基方法中,超高純度天然砂粒或合成石英(例如,SiO2 )可用於襯裡120,該襯裡與成長區130內之熔融矽接觸,而殼體110係由較低純度砂粒製得。亦可將此組態用於連續柴可斯基方法。超高純度天然砂粒具有比高純度天然砂粒高的純度,諸如不超過0.13 ppmw。合成石英之純度高於超高純度天然砂粒,諸如不超過0.13 ppmw。In a batch or recharge Czakowski process, ultra-high purity natural sand or synthetic quartz (e.g., SiO 2 ) can be used for lining 120 that is in contact with molten silicon in growth zone 130, while shell 110 is made of lower purity sand. This configuration can also be used for a continuous Czakowski process. Ultra-high purity natural sand has a higher purity than high purity natural sand, such as not more than 0.13 ppmw. Synthetic quartz has a higher purity than ultra-high purity natural sand, such as not more than 0.13 ppmw.
在替代實施例中,襯裡120及殼體110二者皆可由超高純度天然砂粒或合成石英形成。在又一替代性實施例中,整個坩堝組件100係由單一材料製成或主要係由單一材料製成。舉例而言,坩堝組件100可完全由小於百萬分之20重量之雜質的超高純度天然砂粒或合成石英製得。In an alternative embodiment, both the liner 120 and the shell 110 can be formed from ultra-high purity natural sand or synthetic quartz. In yet another alternative embodiment, the entire crucible assembly 100 is made of a single material or is made primarily of a single material. For example, the crucible assembly 100 can be made entirely of ultra-high purity natural sand or synthetic quartz with less than 20 parts per million by weight of impurities.
如本文中所描述,熱噴塗方法一般描述廣泛分類成三個熱噴塗方法類別之許多方法:火焰熱噴塗方法、電熱噴塗方法及動力熱噴塗方法。各類別之熱噴塗方法均以獨特方式熔融或推動塗料化合物。舉例而言,火焰熱噴塗方法通常用火焰熔融塗料化合物,而電熱噴塗方法用途電流以熔融塗料化合物。動力熱噴塗方法通常以極高速度推動塗料化合物,使得化合物變形且在衝擊時黏結。所有熱噴塗方法一般均需要噴炬、塗料化合物及能量以熔融或推動塗料化合物。As described herein, thermal spraying methods generally describe many methods that are broadly classified into three thermal spraying method categories: flame thermal spraying methods, electric thermal spraying methods, and dynamic thermal spraying methods. Each category of thermal spraying methods melts or propels the coating compound in a unique manner. For example, flame thermal spraying methods typically melt the coating compound with a flame, while electric thermal spraying methods use an electric current to melt the coating compound. Dynamic thermal spraying methods typically propel the coating compound at extremely high speeds, causing the compound to deform and bond upon impact. All thermal spraying methods generally require a spray torch, a coating compound, and energy to melt or propel the coating compound.
現參看圖3,說明適用於所有熱噴塗方法之熱噴塗組件300的方塊圖。熱噴塗組件300一般包括噴炬或噴槍302、能量源304、塗料化合物源306、加速介質源308及視情況,冷卻介質源310。塗料化合物源306向噴槍302提供塗料化合物。在此實施例中塗料化合物為較高級別天然或合成二氧化矽。在替代實施例中,塗料化合物為超高純度天然砂粒、高純度天然砂粒或使得坩堝組件100能夠如本文中所描述地操作之任何塗料化合物。能量源304提供能量以使塗料化合物熔融成熔融粒子,隨後將塗料化合物噴塗至殼體110上。加速介質源308提供用於使塗料化合物之熔融粒子朝向殼體110加速之適合的介質。在一些實施例中,能量源304及加速介質源308經合併成單一能量及加速介質源。在一些實施例中,冷卻介質源310在操作期間提供冷卻介質(一般為水)以冷卻噴槍302。Referring now to FIG. 3 , a block diagram of a thermal spray assembly 300 applicable to all thermal spray methods is illustrated. The thermal spray assembly 300 generally includes a torch or spray gun 302, an energy source 304, a coating compound source 306, an accelerating medium source 308, and optionally, a cooling medium source 310. The coating compound source 306 provides the coating compound to the spray gun 302. In this embodiment, the coating compound is a higher grade natural or synthetic silicon dioxide. In an alternative embodiment, the coating compound is ultra-high purity natural sand, high purity natural sand, or any coating compound that enables the crucible assembly 100 to operate as described herein. The energy source 304 provides energy to melt the coating compound into molten particles, which are then sprayed onto the housing 110. The accelerating medium source 308 provides a suitable medium for accelerating the molten particles of the coating compound toward the housing 110. In some embodiments, the energy source 304 and the accelerating medium source 308 are combined into a single energy and accelerating medium source. In some embodiments, the cooling medium source 310 provides a cooling medium (typically water) to cool the spray gun 302 during operation.
現參看圖4,流程圖說明用於將襯裡120熱噴塗至殼體110上之方法400。方法400一般包括提供402熱噴塗組件300、預處理404殼體110之內表面122、提供406來自塗料化合物源306之塗料化合物、提供408來自能量源304之能量、使用來自能量源304之能量來熔融410塗料化合物以形成塗料化合物之熔融粒子、提供412來自加速介質源308之加速介質、使用來自加速介質源308之加速介質來使塗料化合物之熔融粒子朝向殼體110加速414、使用噴炬302來朝向殼體110之內表面122噴塗416塗料化合物之熔融粒子及加速介質從而在內表面122上形成塗料化合物之塗層312、在方向314上移動418噴炬302以形成較多塗層312、將塗料312黏結420至內表面122上以形成襯裡120及在使用或不使用電漿噴射之情況下後處理422襯裡120之內表面126及/或殼體110。方法400亦可視情況包括提供424來自冷卻介質源310之冷卻介質。提供402熱噴塗組件200一般包括提供噴炬302、能量源304、塗料化合物源306、加速度介質源308及冷卻介質源310。提供404來自塗料化合物源306之塗料化合物包括提供較高級別天然或合成二氧化矽。4, a flow chart illustrates a method 400 for thermally spraying a liner 120 onto a shell 110. The method 400 generally includes providing 402 a thermal spray assembly 300, pre-treating 404 an inner surface 122 of the shell 110, providing 406 a coating compound from a coating compound source 306, providing 408 energy from an energy source 304, using the energy from the energy source 304 to melt 410 the coating compound to form molten particles of the coating compound, providing 412 an accelerating medium from an accelerating medium source 308, using the accelerating medium from the accelerating medium source 308 to move the molten particles of the coating compound toward the shell 110, and applying 414 a heat treatment process to the coating compound. The method 400 includes accelerating 414 the shell 110, spraying 416 molten particles of the coating compound and the accelerating medium toward the inner surface 122 of the shell 110 using the torch 302 to form a coating layer 312 of the coating compound on the inner surface 122, moving 418 the torch 302 in the direction 314 to form more coating layers 312, bonding 420 the coating 312 to the inner surface 122 to form the liner 120, and post-treating 422 the inner surface 126 of the liner 120 and/or the shell 110 with or without plasma spraying. The method 400 may also optionally include providing 424 a cooling medium from the cooling medium source 310. Providing 402 the thermal spray assembly 200 generally includes providing a spray torch 302, an energy source 304, a coating compound source 306, an acceleration medium source 308, and a cooling medium source 310. Providing 404 the coating compound from the coating compound source 306 includes providing a higher level natural or synthetic silicon dioxide.
預處理404殼體110之內表面122為可改良襯裡120與殼體110之黏結、沈積及/或噴塗及/或提高襯裡120之品質的預處理方法。預處理404可包括預加熱殼體110之內表面122、以化學方式預處理殼體110之內表面122、殼體110之內表面122上之粗糙度預處理及/或改良襯裡120對殼體110之黏著性的任何方法。可單獨或與任何其他預處理方法組合使用上文所列之預處理方法中之任一者。Pre-treating 404 the inner surface 122 of the shell 110 is a pre-treatment method that can improve the bonding, deposition and/or coating of the liner 120 to the shell 110 and/or improve the quality of the liner 120. Pre-treating 404 can include any method of pre-heating the inner surface 122 of the shell 110, chemically pre-treating the inner surface 122 of the shell 110, roughness pre-treatment on the inner surface 122 of the shell 110, and/or improving the adhesion of the liner 120 to the shell 110. Any of the pre-treatment methods listed above can be used alone or in combination with any other pre-treatment method.
預加熱預處理方法一般包括在將襯裡120熱噴塗至殼體110上之前預加熱殼體110之內表面122。可使用預加熱裝置(諸如鍋爐或噴炬)以預加熱殼體110之內表面122。另外,當使用火焰熱噴塗方法以熱噴塗襯裡120時,可使用熱噴塗組件300以預加熱殼體110之內表面122。具體而言,熱噴塗組件300可在無任何塗料化合物之情況下預噴塗殼體110之內表面122,使得通常用以熔融塗料化合物之火焰被替代地用於預加熱殼體110之內表面122。預加熱方法可包括預加熱殼體110之內表面122以改良襯裡120對殼體110之黏著性的任何方法或裝置。The preheating pretreatment method generally includes preheating the inner surface 122 of the shell 110 before the liner 120 is thermally sprayed onto the shell 110. A preheating device (such as a boiler or a torch) can be used to preheat the inner surface 122 of the shell 110. In addition, when the flame thermal spraying method is used to thermally spray the liner 120, the thermal spraying assembly 300 can be used to preheat the inner surface 122 of the shell 110. Specifically, the thermal spraying assembly 300 can pre-spray the inner surface 122 of the shell 110 without any coating compound, so that the flame that is usually used to melt the coating compound is used instead to preheat the inner surface 122 of the shell 110. The preheating method may include any method or device that preheats the inner surface 122 of the housing 110 to improve the adhesion of the liner 120 to the housing 110.
化學預處理方法一般包括在將襯裡120熱噴塗至殼體110上之前以化學方式預加熱殼體110之內表面122。可使用化學預處理裝置(諸如噴塗裝置或其他化學塗覆裝置)以預處理殼體110之內表面122。另外,可使用熱噴塗組件300以以化學方式預處理殼體110之內表面122。具體而言,可使用熱噴塗組件300以噴塗改良襯裡120對殼體110之黏著性的預處理塗料。預處理塗料可包括改良襯裡120對殼體110之黏著性的糊狀物或溶劑。化學預處理方法可包括預處理殼體110以改良襯裡120對殼體110之黏著性的任何方法或裝置。The chemical pretreatment method generally includes chemically preheating the inner surface 122 of the shell 110 before thermally spraying the liner 120 onto the shell 110. A chemical pretreatment device (such as a spraying device or other chemical coating device) can be used to pretreat the inner surface 122 of the shell 110. In addition, a thermal spraying assembly 300 can be used to chemically pretreat the inner surface 122 of the shell 110. Specifically, the thermal spraying assembly 300 can be used to spray a pretreatment coating that improves the adhesion of the liner 120 to the shell 110. The pretreatment coating may include a paste or a solvent that improves the adhesion of the liner 120 to the shell 110. The chemical pre-treatment method may include any method or device that pre-treats the housing 110 to improve the adhesion of the liner 120 to the housing 110.
粗糙度預處理方法一般包括在將襯裡120熱噴塗至殼體110上之前以機械方式改變殼體110之內表面122的粗糙度。可使用粗糙度預處理裝置(諸如砂磨裝置或其他機械表面處理裝置)以預處理殼體110之內表面122。可使用機械表面處理裝置以增加或降低殼體110之內表面122的粗糙度,以改良襯裡120對殼體110之黏著性。粗糙度預處理方法可包括預處理殼體110以改良襯裡120對殼體110之黏著性的任何方法或裝置。The roughness pretreatment method generally includes mechanically changing the roughness of the inner surface 122 of the shell 110 before the liner 120 is heat sprayed onto the shell 110. A roughness pretreatment device (such as a sanding device or other mechanical surface treatment device) can be used to pre-treat the inner surface 122 of the shell 110. The mechanical surface treatment device can be used to increase or decrease the roughness of the inner surface 122 of the shell 110 to improve the adhesion of the liner 120 to the shell 110. The roughness pretreatment method can include any method or device for pre-treating the shell 110 to improve the adhesion of the liner 120 to the shell 110.
在已將襯裡120熱噴塗至殼體110上之後,使襯裡120冷卻且固化以形成玻璃態二氧化矽層。為確保形成玻璃狀、非晶而形氧化矽層,控制或最佳化冷卻及固化方法。具體而言,後處理422襯裡120之內表面126及/或殼體110為控制或最佳化冷卻及/或固化方法之視情況選用之後處理方法。後處理422可包括冷卻速率後處理方法、化學後處理方法、電漿噴射後處理方法及/或改良襯裡120對殼體110之黏著性的任何方法。可單獨或與任何其他預處理方法組合使用上文所列之後處理方法中之任一者。After the liner 120 has been heat sprayed onto the shell 110, the liner 120 is cooled and cured to form a glassy silicon dioxide layer. To ensure that a glassy, amorphous silicon oxide layer is formed, the cooling and curing methods are controlled or optimized. Specifically, post-treatment 422 of the inner surface 126 of the liner 120 and/or the shell 110 is a post-treatment method that is optionally selected to control or optimize the cooling and/or curing methods. Post-treatment 422 may include a cooling rate post-treatment method, a chemical post-treatment method, a plasma spray post-treatment method, and/or any method that improves the adhesion of the liner 120 to the shell 110. Any of the post-treatment methods listed above may be used alone or in combination with any other pre-treatment method.
冷卻後處理方法一般包括控制或最佳化襯裡120及/或殼體110之冷卻速率以改良襯裡120在殼體110上的黏著性。後處理冷卻方法可包括使用冷卻裝置(諸如風扇或風機)來冷卻襯裡120及/或殼體110,以提高襯裡120及/或殼體110之冷卻速率以改良襯裡120對殼體110之黏著性。後處理冷卻方法亦可包括藉由朝向襯裡120之內表面126導入低溫氣體來冷卻襯裡120及/或殼體110,以提高襯裡120及/或殼體110之冷卻速率以改良襯裡120對殼體110之黏著性。後處理冷卻方法亦可包括使用加熱裝置(諸如鍋爐或噴炬)來加熱襯裡120及/或殼體110,以降低襯裡120及/或殼體110之冷卻速率以改良襯裡120對殼體110之黏著性。後處理冷卻方法可包括控制、最佳化、提高及/或降低襯裡120及/或殼體110之冷卻速率以改良襯裡120與殼體110之黏結、沈積及/或噴塗及/或襯裡120之品質的任何方法或裝置。The cooling post-processing method generally includes controlling or optimizing the cooling rate of the liner 120 and/or the shell 110 to improve the adhesion of the liner 120 to the shell 110. The post-processing cooling method may include using a cooling device (such as a fan or blower) to cool the liner 120 and/or the shell 110 to increase the cooling rate of the liner 120 and/or the shell 110 to improve the adhesion of the liner 120 to the shell 110. The post-processing cooling method may also include cooling the liner 120 and/or the shell 110 by introducing a low temperature gas toward the inner surface 126 of the liner 120 to increase the cooling rate of the liner 120 and/or the shell 110 to improve the adhesion of the liner 120 to the shell 110. The post-processing cooling method may also include heating the liner 120 and/or the shell 110 using a heating device (such as a boiler or a torch) to reduce the cooling rate of the liner 120 and/or the shell 110 to improve the adhesion of the liner 120 to the shell 110. The post-processing cooling method may include any method or device for controlling, optimizing, increasing and/or decreasing the cooling rate of the liner 120 and/or the shell 110 to improve the bonding, deposition and/or spraying of the liner 120 and the shell 110 and/or the quality of the liner 120.
化學後處理方法一般包括在將襯裡120熱噴塗至殼體110上之後以化學方式後處理襯裡120及/或殼體110。可使用化學後處理設備(諸如噴塗裝置或其他化學塗覆裝置)以後處理襯裡120及/或殼體110。另外,可使用熱噴塗組件300以以化學方式後處理襯裡120及/或殼體110。具體而言,可使用熱噴塗組件300以將改良襯裡120對殼體110之黏著性之後處理塗料噴塗於襯裡120及/或殼體110上。後處理塗料可包括改良襯裡120在殼體110上之黏著性的糊狀物或溶劑。化學後處理方法可包括後處理殼體110以改良襯裡120對殼體110之黏著性的任何方法或裝置。The chemical post-treatment method generally includes chemically post-treating the liner 120 and/or the shell 110 after the liner 120 is thermally sprayed onto the shell 110. A chemical post-treatment device (such as a spraying device or other chemical coating device) can be used to post-treat the liner 120 and/or the shell 110. In addition, a thermal spray assembly 300 can be used to chemically post-treat the liner 120 and/or the shell 110. Specifically, the thermal spray assembly 300 can be used to spray a post-treatment coating that improves the adhesion of the liner 120 to the shell 110 onto the liner 120 and/or the shell 110. The post-treatment coating may include a paste or solvent that improves the adhesion of the liner 120 to the shell 110. The chemical post-treatment method may include any method or device that post-treats the shell 110 to improve the adhesion of the liner 120 to the shell 110.
熱後處理方法一般包括在將襯裡120熱噴塗至殼體110上之後熱處理襯裡120之內表面126。可使用諸如電漿炬之熱處理裝置以熱處理襯裡120之內表面126。另外,當使用電漿熱噴塗方法以熱噴塗襯裡120時,可使用熱噴塗組件300以熱處理襯裡120之內表面126。具體而言,熱噴塗組件300可在無任何塗料化合物之情況下噴塗襯裡120之內表面126,使得通常用以熔融塗料化合物之電漿噴射被替代地用於熱處理襯裡120之內表面126。熱後處理方法可包括熱處理殼體110之內表面122以改良襯裡120對殼體110之黏著性的任何方法或裝置。The thermal post-treatment method generally includes heat treating the inner surface 126 of the liner 120 after the liner 120 is heat sprayed onto the housing 110. A heat treatment device such as a plasma torch may be used to heat treat the inner surface 126 of the liner 120. In addition, when the liner 120 is heat sprayed using a plasma heat spraying method, the heat spraying assembly 300 may be used to heat treat the inner surface 126 of the liner 120. Specifically, the heat spraying assembly 300 may spray the inner surface 126 of the liner 120 without any coating compound, so that plasma spraying, which is usually used to melt the coating compound, is used instead to heat treat the inner surface 126 of the liner 120. The thermal post-treatment method may include any method or device that thermally treats the inner surface 122 of the housing 110 to improve the adhesion of the liner 120 to the housing 110.
另外,可與任何其他後處理方法組合使用上文所列之後處理方法中之任一者以確保襯裡120形成為非晶玻璃而非結晶玻璃。具體而言,若熱噴塗之襯裡120之溫度過高,其冷卻速率係過低,則襯裡120將形成結晶玻璃襯裡120而非非晶玻璃襯裡120。如此,可使用後處理方法之組合以控制襯裡120之冷卻速率。舉例而言,在熱噴塗方法結束時,可使用熱後處理方法以維持襯裡120之高溫直至起始冷卻後處理方法以控制襯裡120之冷卻速率。具體而言,熱噴塗組件300可用電漿噴射噴塗襯裡120之內表面126以緊接在已將襯裡120熱噴塗至殼體110上之後維持襯裡120的溫度。熱噴塗組件300維持襯裡120之溫度直至起始冷卻後處理方法以控制襯裡120之冷卻速率。冷卻後處理方法可包括定位於殼體110下方之冷卻表面或朝向襯裡120之內表面126導入低溫氣體以提高襯裡120之冷卻速率。In addition, any of the above-listed post-processing methods may be used in combination with any other post-processing method to ensure that the liner 120 is formed as amorphous glass rather than crystallized glass. Specifically, if the temperature of the heat-sprayed liner 120 is too high and its cooling rate is too low, the liner 120 will form a crystallized glass liner 120 rather than an amorphous glass liner 120. In this way, a combination of post-processing methods may be used to control the cooling rate of the liner 120. For example, at the end of the heat-spraying method, a thermal post-processing method may be used to maintain the high temperature of the liner 120 until the cooling post-processing method is started to control the cooling rate of the liner 120. Specifically, the thermal spray assembly 300 may spray the inner surface 126 of the liner 120 with plasma spraying to maintain the temperature of the liner 120 immediately after the liner 120 has been thermally sprayed onto the housing 110. The thermal spray assembly 300 maintains the temperature of the liner 120 until a post-cooling treatment process is initiated to control the cooling rate of the liner 120. The post-cooling treatment process may include a cooling surface positioned below the housing 110 or introducing a low temperature gas toward the inner surface 126 of the liner 120 to increase the cooling rate of the liner 120.
可在方法400之步驟中之任一者之間插入一或多個中間步驟以改良襯裡120對殼體110之黏著性。中間步驟可包括改良襯裡120與殼體110之黏著性的任何方法或裝置。One or more intermediate steps may be inserted between any of the steps of method 400 to improve the adhesion of liner 120 to housing 110. The intermediate steps may include any method or device that improves the adhesion of liner 120 to housing 110.
較高級別天然或合成二氧化矽具有高熔點(約1710℃)。如此,需要大量能量以熔熔合成二氧化矽且難以使用諸如熱噴塗組件300之小型熱噴塗裝置來軟化二氧化矽足以形成塗層。因此,能量源304必須提供充足的能量以將合成二氧化矽軟化且熔融成熔融粒子。Higher grade natural or synthetic silicon dioxide has a high melting point (about 1710° C.). Thus, a large amount of energy is required to melt synthetic silicon dioxide and it is difficult to use a small thermal spraying device such as thermal spraying assembly 300 to soften the silicon dioxide enough to form a coating. Therefore, energy source 304 must provide sufficient energy to soften and melt the synthetic silicon dioxide into molten particles.
另外,可在熱噴塗方法期間藉由熱噴塗組件300將污染物引入至塗料化合物之熔融粒子中。熱噴塗組件300可經設計或組態以減少或消除在熱噴塗方法期間藉由熱噴塗組件300引入至塗料化合物之熔融粒子中的污染物。Additionally, contaminants may be introduced into the molten particles of the coating compound during the thermal spraying process by the thermal spraying assembly 300. The thermal spraying assembly 300 may be designed or configured to reduce or eliminate contaminants introduced into the molten particles of the coating compound by the thermal spraying assembly 300 during the thermal spraying process.
在火焰熱噴塗方法中,提供406來自能量源304之能量一般包括提供能夠自氧化反應提供能量之成氣態的化學物質。即,火焰熱噴塗方法一般藉由在氧氣或壓縮空氣存在下燃燒烴(諸如但不限於乙炔、煤油或天然氣)來提供能量且熔融塗料化合物。火焰熱噴塗方法一般包括爆震噴塗方法、火線噴塗方法、火焰粉末噴塗方法、高速度氧氣燃料(HVOF)噴塗方法及高速度空氣燃料(HVAF)噴塗方法。In flame thermal spraying methods, providing 406 energy from energy source 304 generally includes providing a gaseous chemical substance capable of providing energy from an oxidation reaction. That is, flame thermal spraying methods generally provide energy and melt the coating compound by burning hydrocarbons (such as but not limited to acetylene, kerosene, or natural gas) in the presence of oxygen or compressed air. Flame thermal spraying methods generally include detonation spraying methods, line-fire spraying methods, flame powder spraying methods, high velocity oxygen fuel (HVOF) spraying methods, and high velocity air fuel (HVAF) spraying methods.
在震爆噴塗方法中,自塗料化合物源306提供動力合成二氧化矽且將其注入至噴炬302之長機筒中。長機筒經自冷卻介質源310提供之水水冷卻。亦將氧氣及諸如乙炔之烴燃料注入至機筒中且使用引燃機制來爆震。爆震使粉末狀合成二氧化矽熔融且使熔熔合成二氧化矽與所得燃燒氣體一起加速至長機筒之外且至內表面122上。每秒重複爆震多次。In the detonation spraying method, powered synthetic silicon dioxide is provided from a coating compound source 306 and injected into the long barrel of the torch 302. The long barrel is water-cooled with water provided from a cooling medium source 310. Oxygen and a hydrocarbon fuel such as acetylene are also injected into the barrel and detonated using an ignition mechanism. The detonation melts the powdered synthetic silicon dioxide and accelerates the molten synthetic silicon dioxide along with the resulting combustion gases out of the long barrel and onto the inner surface 122. The detonation is repeated multiple times per second.
在火線噴塗方法中,將呈絲線形式之合成二氧化矽饋入至噴炬302中,同時燃燒氧氣及諸如乙炔之烴燃料以熔熔合成二氧化矽。亦提供壓縮空氣以霧化合成二氧化矽之熔融粒子且使熔融二氧化矽朝向內表面122加速。In the flame spraying method, synthetic silicon dioxide in the form of a wire is fed into the torch 302 while oxygen and a hydrocarbon fuel such as acetylene are burned to melt the synthetic silicon dioxide. Compressed air is also provided to atomize the molten particles of the synthetic silicon dioxide and accelerate the molten silicon dioxide toward the inner surface 122.
在火焰粉末噴塗方法中,將呈粉末形式之合成二氧化矽饋入至噴炬302中,同時燃燒氧氣及諸如乙炔之烴燃料以熔熔合成二氧化矽。將壓縮空氣與粉末狀合成二氧化矽混合以將二氧化矽輸送至火焰中。所得燃燒氣體及合成二氧化矽之熔融粒子藉由壓縮空氣朝向內表面122加速。In the flame powder spraying method, synthetic silicon dioxide in powder form is fed into the torch 302 while oxygen and a hydrocarbon fuel such as acetylene are burned to melt the synthetic silicon dioxide. Compressed air is mixed with the powdered synthetic silicon dioxide to transport the silicon dioxide into the flame. The resulting combustion gas and molten particles of synthetic silicon dioxide are accelerated toward the inner surface 122 by the compressed air.
在HVOF噴塗方法中,噴炬302包括燃燒室及噴嘴。將氧氣及諸如丙烯之烴燃料饋入至燃燒室中且點火。經由噴嘴將所得燃燒氣體饋入以形成超音波火焰,繼而以高速度將該超音波火焰饋入至噴炬302之機筒中。在一些實施例中,來自機筒之超音波火焰的出口速度超過聲音之速度。將呈粉末形式之合成二氧化矽夾帶於運載氣體(通常為氮)中,且與超音波火焰一起注入至噴炬302之機筒中。超音波火焰使合成二氧化矽熔融成合成二氧化矽之熔融粒子且使合成二氧化矽之熔融粒子朝向內表面122加速。通常提供冷卻水以冷卻噴炬302。In the HVOF spraying method, the torch 302 includes a combustion chamber and a nozzle. Oxygen and a hydrocarbon fuel such as propylene are fed into the combustion chamber and ignited. The resulting combustion gas is fed through the nozzle to form an ultrasonic flame, which is then fed into the barrel of the torch 302 at a high speed. In some embodiments, the exit velocity of the ultrasonic flame from the barrel exceeds the speed of sound. Synthetic silicon dioxide in powder form is entrained in a carrier gas (usually nitrogen) and injected into the barrel of the torch 302 together with the ultrasonic flame. The ultrasonic flame melts the synthetic silicon dioxide into molten particles of synthetic silicon dioxide and accelerates the molten particles of synthetic silicon dioxide toward the inner surface 122. Cooling water is typically provided to cool the torch 302.
HVAF噴塗方法與HVOF噴塗方法類似,例外為將壓縮空氣而非氧氣饋入至燃燒室中且點火,從而生產低溫超音波火焰。The HVAF spraying process is similar to the HVOF spraying process, except that compressed air rather than oxygen is fed into the combustion chamber and ignited, producing a low temperature ultrasonic flame.
在電熱噴塗方法中,提供來自能量源304之能量406一般包括提供用以直接地或間接地熔熔合成二氧化矽之電流。電熱噴塗方法一般包括電漿噴射方法及電弧絲線噴塗方法。In the electrothermal spraying method, providing energy 406 from the energy source 304 generally includes providing an electric current for directly or indirectly melting and forming silicon dioxide. The electrothermal spraying method generally includes a plasma spraying method and an arc wire spraying method.
在電漿噴射方法中,噴炬302包括電極及此相鄰定位之噴嘴,使得其間形成高頻或高電壓電弧。惰性氣體(通常為氬氣)在電極與噴嘴之間流動且係藉由電弧離子化。惰性氣體之離子化產生具有升高之溫度及速度的電漿。將呈粉末形式之合成二氧化矽夾帶於其中其經熔融成合成二氧化矽之熔融粒子且朝向內表面122加速之電漿中。In the plasma jetting method, the torch 302 includes an electrode and a nozzle positioned adjacent thereto so that a high frequency or high voltage arc is formed therebetween. An inert gas (usually argon) flows between the electrode and the nozzle and is ionized by the arc. The ionization of the inert gas produces a plasma with an elevated temperature and velocity. Synthetic silicon dioxide in powder form is entrained in the plasma in which it is melted into molten particles of synthetic silicon dioxide and accelerated toward the inner surface 122.
在電弧絲線噴塗製程中,將合成二氧化矽之兩根絲線饋入至噴炬302中且向各絲線饋入電流。使絲線彼此緊密接近,使得兩個絲線短路中之電流升高絲線之溫度。升高之溫度熔融絲線之頂端且壓縮空氣或惰性氣體取道絲線之熔融頂端以霧化合成二氧化矽之熔融粒子且使其朝向內表面122加速。In the arc wire spraying process, two wires of synthetic silicon dioxide are fed into the spray torch 302 and current is fed to each wire. The wires are brought into close proximity with each other so that the current in the short circuit between the two wires raises the temperature of the wires. The raised temperature melts the tops of the wires and compressed air or inert gas passes through the molten tops of the wires to atomize molten particles of synthetic silicon dioxide and accelerate them toward the inner surface 122.
在動力熱噴塗方法中,提供來自能量源304之能量一般包括提供高速度經霧化氣體流以使塗料化合物加速至極高速度。動力熱噴塗方法一般包括冷氣體噴塗方法之變化。在冷氣體噴塗方法中,呈粉末形式之合成二氧化矽夾帶於高速度經霧化氣體流中。經霧化氣體經加熱且部分地熔熔合成二氧化矽。一旦夾帶,高速度經霧化氣體以每秒超過1,000公尺之速度使粉末狀合成二氧化矽朝向內表面122加速。極高速度引起粉末狀部分熔融之合成二氧化矽變形且在與內表面122衝擊後與內表面122機械黏結,從而產生襯裡120。In a kinetic thermal spraying method, providing energy from an energy source 304 generally includes providing a high velocity atomized gas stream to accelerate the coating compound to an extremely high velocity. The kinetic thermal spraying method generally includes a variation of a cold gas spraying method. In a cold gas spraying method, synthetic silicon dioxide in powder form is entrained in a high velocity atomized gas stream. The atomized gas is heated and partially melts the synthetic silicon dioxide. Once entrained, the high velocity atomized gas accelerates the powdered synthetic silicon dioxide toward the inner surface 122 at a velocity of more than 1,000 meters per second. The extremely high velocity causes the powdered partially melted synthetic silicon dioxide to deform and mechanically bond to the inner surface 122 after impact with the inner surface 122, thereby producing the lining 120.
現參看圖5,流程圖說明用於製得圖1中示出之坩堝組件之方法500。方法500一般包括使用注漿成型方法來形成502殼體110且使用熱噴塗方法來形成504襯裡120。使用注漿成型方法來形成502殼體110包括根據圖中2所說明之方法200形成殼體110。使用熱噴塗方法來形成504襯裡120包括根據圖4中所說明之方法400形成襯裡120。在替代實施例中,殼體110係使用諸如注膠成型之替代方法而形成。Referring now to FIG. 5 , a flow chart illustrates a method 500 for making the crucible assembly shown in FIG. 1 . The method 500 generally includes forming 502 a shell 110 using a slip injection molding method and forming 504 a liner 120 using a thermal spraying method. Forming 502 the shell 110 using the slip injection molding method includes forming the shell 110 according to the method 200 illustrated in FIG. 2 . Forming 504 the liner 120 using the thermal spraying method includes forming the liner 120 according to the method 400 illustrated in FIG. 4 . In alternative embodiments, the shell 110 is formed using alternative methods such as slip injection molding.
現參看圖6,流程圖說明一種用於使用柴可斯基方法及圖1中示出之坩堝組件100來拉製晶體錠之方法600。方法600一般包括提供602包括襯裡120及殼體110之坩堝組件100、在坩堝組件100中熔融604半導體材料及/或太陽能級材料、自坩堝組件100拉製606半導體及/或太陽能級材料之單晶體及將半導體及/或太陽能級材料饋入608至坩堝組件100中。6, a flow chart illustrates a method 600 for pulling a crystalline ingot using the Czakowski method and the crucible assembly 100 shown in FIG1. The method 600 generally includes providing 602 a crucible assembly 100 including a liner 120 and a shell 110, melting 604 a semiconductor material and/or a solar grade material in the crucible assembly 100, pulling 606 a single crystal of the semiconductor and/or solar grade material from the crucible assembly 100, and feeding 608 the semiconductor and/or solar grade material into the crucible assembly 100.
如圖1中所示,提供用於方法600中之坩堝組件100包括形成於殼體110內之襯裡120。熔融604坩堝組件100中之半導體材料及/或太陽能級材料包括在成長區130中熔融材料。在對材料進行熔融604之後,熔融材料至少部分地填充成長區130。自坩堝組件100拉製606半導體及/或太陽能級材料之單晶體包括自襯裡120內之成長區130拉製606單晶體。將半導體及/或太陽能級材料饋入608至坩堝組件100中包括將額外材料添加至成長區130中。As shown in FIG. 1 , a crucible assembly 100 provided for use in method 600 includes a liner 120 formed within a housing 110. Melting 604 semiconductor material and/or solar grade material in crucible assembly 100 includes melting the material in growth zone 130. After melting 604 the material, the molten material at least partially fills growth zone 130. Pulling 606 a single crystal of semiconductor and/or solar grade material from crucible assembly 100 includes pulling 606 a single crystal from growth zone 130 within liner 120. Feeding 608 semiconductor and/or solar grade material into crucible assembly 100 includes adding additional material to growth zone 130.
現參看圖7,坩堝組件700之剖視圖說明坩堝組件100之替代性實施例。坩堝組件700包括熱噴塗於殼體710之部分上的襯裡720。與坩堝組件100對比,襯裡720僅經熱噴於坩堝組件700之潤濕表面上。相比於坩堝組件100,減少襯裡720之區域降低坩堝組件700之成本。7, a cross-sectional view of a crucible assembly 700 illustrates an alternative embodiment of the crucible assembly 100. The crucible assembly 700 includes a liner 720 thermally sprayed on a portion of the shell 710. In contrast to the crucible assembly 100, the liner 720 is thermally sprayed only on the wetted surface of the crucible assembly 700. Reducing the area of the liner 720 reduces the cost of the crucible assembly 700 compared to the crucible assembly 100.
本發明之製得之坩堝組件產生降低之成本、改良之設計靈活性、改良之坩堝壽命及引入至自坩堝組件抽取之單晶體錠中的有限雜質。在一些實施例中,坩堝組件經由使用注漿成型殼體來降低成本。相比於電弧熔合,注漿成型之降低之成本及其用於較大殼體的用途產生降低之成本。生產澆鑄之坩堝之成本小於生產電弧熔合之坩堝,因為用於生產澆鑄之坩堝之資本設備比用於生產電弧熔合之坩堝的資本設備便宜,且生產澆鑄之坩堝所需的能量小於電弧熔合之坩堝所需的能量。另外,由高雜質、較不昂貴之天然二氧化矽而非較低雜質、較高成本合成二氧化矽製得之殼體需要製造高品質錠。使用較不昂貴的材料以形成大部分坩堝實質上降低成本。The resulting crucible assemblies of the present invention result in reduced cost, improved design flexibility, improved crucible life, and limited impurities introduced into single crystal ingots extracted from the crucible assembly. In some embodiments, the crucible assembly reduces cost by using a cast molded shell. The reduced cost of cast molding and its use for larger shells results in reduced cost compared to arc fusion. The cost of producing a cast crucible is less than that of producing an arc fused crucible because the capital equipment used to produce a cast crucible is less expensive than the capital equipment used to produce an arc fused crucible, and the energy required to produce a cast crucible is less than the energy required for an arc fused crucible. Additionally, a shell made from high impurity, less expensive natural silica rather than lower impurity, higher cost synthetic silica requires the manufacture of high quality ingots. Using less expensive materials to form the bulk of the crucible substantially reduces costs.
一些實施例之坩堝組件由於使用澆鑄之殼體而具有改良之設計靈活性。相比於用以生產電弧熔合之坩堝之設備,例如,旋轉模具、電極等,可較容易且便宜地改變用以生產澆鑄之坩堝之模具以產生不同坩堝幾何形狀,例如,較大或較小直徑坩堝。最後,本文中所揭示之襯裡充當熔融物與高雜質殼體之間的低雜質障壁。此限制被引入至自使用襯裡之坩堝組件抽取之單晶體錠中的雜質。The crucible assemblies of some embodiments have improved design flexibility due to the use of a cast shell. Compared to the equipment used to produce arc-fused crucibles, such as rotating molds, electrodes, etc., the molds used to produce cast crucibles can be easily and cheaply changed to produce different crucible geometries, such as larger or smaller diameter crucibles. Finally, the liner disclosed herein acts as a low-impurity barrier between the melt and the high-impurity shell. This limitation is introduced into the impurities in the single crystal ingot extracted from the crucible assembly using the liner.
當介紹本發明之要素或實施例時,冠詞「一(a/an)」及「該(the/said)」欲意謂存在一或多個元素。術語「包含(comprising)」、「包括(including)」及「具有(having)」意欲為包括性的,且意謂可能存在除所列元素之外的其他要素。使用指示特定定向(例如,「頂部」、「底部」、「側」、「下」、「上」等)之術語係為了便於說明且不需要所描述之物件之任何特定定向。When introducing elements or embodiments of the present invention, the articles "a," "an," and "the," are intended to mean that there are one or more elements. The terms "comprising," "including," and "having" are intended to be inclusive and mean that there may be additional elements other than the listed elements. The use of terms indicating a particular orientation (e.g., "top," "bottom," "side," "lower," "upper," etc.) is for convenience of description and does not require any particular orientation of the items described.
由於可在不背離本發明之範疇的情況下在上述構造及方法中作出各種改變,因此意欲上述描述中所含有的及隨附圖式中所展示的所有事項將解釋為說明性的且不具有限制性意義。As various changes could be made in the above constructions and methods without departing from the scope of the invention, it is intended that all matter contained in the above description and shown in the accompanying drawings shall be interpreted as illustrative and not in a limiting sense.
100‧‧‧坩堝組件 110‧‧‧殼體 120‧‧‧襯裡 122‧‧‧殼體之內表面 124‧‧‧殼體之外表面 126‧‧‧襯裡之內表面 128‧‧‧襯裡之外表面 130‧‧‧成長區 132‧‧‧坩堝組件之直徑 200‧‧‧方法 202‧‧‧混合 204‧‧‧澆鑄 206‧‧‧乾燥 208‧‧‧移出 210‧‧‧燒製 212‧‧‧冷卻 300‧‧‧熱噴塗組件 302‧‧‧噴炬或噴槍 304‧‧‧能量源 306‧‧‧塗料化合物源 308‧‧‧加速介質源 310‧‧‧冷卻介質源 312‧‧‧塗料化合物之塗層 314‧‧‧移動噴炬之方向 400‧‧‧方法 402‧‧‧提供 404‧‧‧預處理 406‧‧‧提供 408‧‧‧提供 410‧‧‧熔融 412‧‧‧提供 414‧‧‧加速 416‧‧‧噴塗 418‧‧‧移動 420‧‧‧黏結 422‧‧‧後處理 424‧‧‧提供 500‧‧‧方法 502‧‧‧形成 504‧‧‧形成 600‧‧‧方法 602‧‧‧提供 604‧‧‧熔融 606‧‧‧拉製 608‧‧‧饋入 700‧‧‧坩堝組件 710‧‧‧殼體 720‧‧‧襯裡100‧‧‧Crucible assembly 110‧‧‧Shell 120‧‧‧Lining 122‧‧‧Inner surface of shell 124‧‧‧Outer surface of shell 126‧‧‧Inner surface of lining 128‧‧‧Outer surface of lining 130‧‧‧Growth zone 132‧‧‧Diameter of crucible assembly 200‧‧‧Method 202‧‧‧Mixed 204‧‧‧Casting 206‧‧‧Drying 208‧‧‧Removal 210‧‧‧Firing 212‧‧‧Cooling 300‧‧‧Hot spray assembly 302‧‧‧Torch or spray gun 304‧‧‧Energy source 306‧‧‧Coating compound source 308‧‧‧Accelerating medium source 310‧‧‧Cooling medium source 312‧ ‧‧Coating of coating compound 314‧‧‧Direction of moving torch 400‧‧‧Method 402‧‧‧Provide 404‧‧‧Pretreatment 406‧‧‧Provide 408‧‧‧Provide 410‧‧‧Melting 412‧‧‧Provide 414‧‧‧Acceleration 416‧‧‧Spraying 418‧‧‧Move 420‧‧‧ Bonding 422‧‧‧Post-treatment 424‧‧‧Provide 500‧‧‧Method 502‧‧‧Form 504‧‧‧Form 600‧‧‧Method 602‧‧‧Provide 604‧‧‧Melting 606‧‧‧Drawing 608‧‧‧Feeding 700‧‧‧Crucible assembly 710‧‧‧Shell 720‧‧‧Lining
圖1為包括主體及襯裡之坩堝組件之截面視圖。FIG. 1 is a cross-sectional view of a crucible assembly including a body and a liner.
圖2為說明一種用於製得圖1中示出之殼體之適合的方法的流程圖。FIG. 2 is a flow chart illustrating a suitable method for making the housing shown in FIG. 1 .
圖3為熱噴塗組件之方塊圖。Figure 3 is a block diagram of the thermal spray assembly.
圖4A-4B為說明一種用於使用圖3中示出之熱噴塗組件之適合的方法的流程圖。4A-4B are flow charts illustrating a suitable method for using the thermal spray assembly shown in FIG. 3 .
圖5為說明一種用於製得圖1中示出之坩堝組件之適合的方法的流程圖。FIG. 5 is a flow chart illustrating a suitable method for making the crucible assembly shown in FIG. 1 .
第6圖為說明一種用於使用柴可斯基方法及圖1中示出之坩堝組件來拉製晶體錠之適合的方法的流程圖。FIG. 6 is a flow chart illustrating a suitable method for pulling a crystalline ingot using the Czochralski method and the crucible assembly shown in FIG. 1 .
圖7為包括主體及襯裡之另一坩堝組件之截面視圖。FIG. 7 is a cross-sectional view of another crucible assembly including a main body and a liner.
貫穿圖式之若干視圖,對應參考標號指示對應零件。Corresponding reference numerals indicate corresponding parts throughout the several views of the drawings.
100‧‧‧坩堝組件 100‧‧‧Crucible components
110‧‧‧殼體 110‧‧‧Shell
120‧‧‧襯裡 120‧‧‧lining
122‧‧‧殼體之內表面 122‧‧‧Inner surface of the shell
124‧‧‧殼體之外表面 124‧‧‧Outer surface of the shell
126‧‧‧襯裡之內表面 126‧‧‧Inner surface of lining
128‧‧‧襯裡之外表面 128‧‧‧Outside surface of lining
130‧‧‧成長區 130‧‧‧Growth Area
132‧‧‧坩堝組件之直徑 132‧‧‧Diameter of crucible assembly
Claims (19)
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| US62/611,758 | 2017-12-29 |
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| CN (1) | CN111527241A (en) |
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| EP4107314B1 (en) | 2020-02-20 | 2024-03-06 | GlobalWafers Co., Ltd. | Methods for forming a unitized crucible assembly, crucible molds and unitized crucibles |
| US11377751B2 (en) | 2020-02-20 | 2022-07-05 | Globalwafers Co., Ltd. | Crucible molds |
| US11326271B2 (en) | 2020-02-20 | 2022-05-10 | Globalwafers Co., Ltd. | Methods for forming a unitized crucible assembly |
| KR20230098872A (en) * | 2020-11-11 | 2023-07-04 | 글로벌웨이퍼스 씨오., 엘티디. | Methods of Forming Single Crystal Silicon Ingots with Reduced Crucible Erosion |
| CN116639989B (en) * | 2023-05-18 | 2025-10-14 | 中山市华山特种陶瓷有限公司 | A method for preparing a disposable lined crucible and a disposable lined crucible |
| CN117843399A (en) * | 2024-01-08 | 2024-04-09 | 安徽华晟新材料有限公司 | Crucible and preparation method thereof |
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| JP2011088775A (en) * | 2009-10-22 | 2011-05-06 | Japan Siper Quarts Corp | Composite crucible and method for manufacturing the same |
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| US6012304A (en) * | 1991-09-30 | 2000-01-11 | Loxley; Ted A. | Sintered quartz glass products and methods for making same |
| JP3918379B2 (en) * | 1999-10-20 | 2007-05-23 | トヨタ自動車株式会社 | Thermal spraying method, thermal spraying device and powder passage device |
| CA2658210A1 (en) * | 2008-04-04 | 2009-10-04 | Sulzer Metco Ag | Method and apparatus for the coating and for the surface treatment of substrates by means of a plasma beam |
| CN102471926B (en) * | 2009-09-09 | 2015-05-06 | 日本超精石英株式会社 | Composite crucible, method for producing same, and method for producing silicon crystal |
| CN102762781B (en) * | 2009-12-14 | 2016-03-16 | 日本超精石英株式会社 | Vitreous silica crucible and manufacturing method thereof |
| JP5685894B2 (en) * | 2010-11-05 | 2015-03-18 | 信越半導体株式会社 | Quartz glass crucible, method for producing the same, and method for producing silicon single crystal |
| JP5605902B2 (en) * | 2010-12-01 | 2014-10-15 | 株式会社Sumco | Method for producing silica glass crucible, silica glass crucible |
| JP5741163B2 (en) * | 2011-04-11 | 2015-07-01 | 信越半導体株式会社 | Quartz glass crucible, method for producing the same, and method for producing silicon single crystal |
| JP2013095651A (en) * | 2011-11-04 | 2013-05-20 | Covalent Materials Corp | Silica sintered body crucible |
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