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TWI840019B - Trimming device, electronic device having the same and trimming method which trims multiple devices under test at the same time - Google Patents

Trimming device, electronic device having the same and trimming method which trims multiple devices under test at the same time Download PDF

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TWI840019B
TWI840019B TW111148205A TW111148205A TWI840019B TW I840019 B TWI840019 B TW I840019B TW 111148205 A TW111148205 A TW 111148205A TW 111148205 A TW111148205 A TW 111148205A TW I840019 B TWI840019 B TW I840019B
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trimming
value
electrical level
target electrical
electronic device
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TW202426946A (en
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李糧全
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新唐科技股份有限公司
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Priority to CN202310328931.3A priority patent/CN118209835A/en
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Abstract

A trimming device used in an electronic device has a pin configuration determination unit, a target electrical level receiving unit and a self-trimming unit. The pin configuration determining unit determines a trimming configuration of the electronic device according to a configuration signal of at least a first pin of the electronic device. The target electrical level receiving unit is used for receiving the target electrical level, wherein a type of the target electrical level corresponds to the trimming configuration. The self-trimming unit selects one of a first to K thfunctional devices in the electronic device according to the trim configuration, performs self-trimming on the selected functional device to find out a trim value which make the selected functional device be able to output an electrical value equal or similar to a target electrical level, and records the trim value, the trimming configuration and the target electrical level in a memory device.

Description

修整裝置、具有該修整裝置的電子裝置及同時對多個待測裝置進行修整的修整方法Trimming device, electronic device having the same, and trimming method for simultaneously trimming multiple devices under test

本發明涉及一種待測裝置(Device Under Test,DUT)的修整技術,且特別是一種可以讓作為多個待測裝置的多個電子裝置同時地進行自我修整的修整裝置、方法,以及使用上述修整裝置或方法的電子裝置。The present invention relates to a device under test (DUT) trimming technology, and in particular to a trimming device and method that can allow multiple electronic devices serving as multiple DUTs to perform self-trim simultaneously, and an electronic device using the trimming device or method.

不論是離散電路或積體電路在製造過程中,都會因為製程偏差,導致同一種電路出廠後會有偏移。除了製程偏差外,溫度與操作電壓的不同,也會導致同一種電路會有偏移。為了處理此偏移,一般都會對電路進行修整。在給定目標電性準位(例如,目標電壓值、目標頻率值、目標阻抗值或目標電流值等)後,透過修整方法(例如,二分逼近法),找出一個修整值(例如,偏壓電壓修整值、偏壓電流修整值或阻抗修整值)使得電路能夠輸出等於目標電性準位(或輸出貼近目標電性準位)的電性值,並將修整值與相應的目標電性準位的資訊記錄於記憶裝置中。如此,便可以讓電路在下次使用時,直接套用修整值補償來達到輸出目標電性準位的目的。Whether it is a discrete circuit or an integrated circuit, the same circuit will have an offset after leaving the factory due to process deviation during the manufacturing process. In addition to process deviation, differences in temperature and operating voltage will also cause the same circuit to have an offset. In order to deal with this offset, the circuit is generally trimmed. After the target electrical level (for example, target voltage value, target frequency value, target impedance value or target current value, etc.) is given, a trimming method (for example, binary approximation method) is used to find a trimming value (for example, bias voltage trimming value, bias current trimming value or impedance trimming value) so that the circuit can output an electrical value equal to the target electrical level (or output close to the target electrical level), and the trimming value and the corresponding target electrical level information are recorded in a memory device. In this way, the circuit can directly apply the trimming value compensation to achieve the output target electrical level the next time it is used.

請參照圖1,圖1是先前技術的修整方法的流程示意圖。先前技術的修整方法是提供一種檢測裝置,讓待測裝置可以插設在檢測裝置上,透過檢測裝置內建的修整方法進行修整,找出修整值使待測裝置輸出貼近或相等目標電性準位之電性值,並將修整值與目標電性準位記錄於待測裝置的記憶裝置。若要對第一至第N待測裝置進行修整,則需要依序執行步驟S11、S12、…、S1N。在步驟S11中,先將第一待測裝置插設在檢測裝置,接著,檢測裝置執行二分逼近法,找出修整值,並將修整值與目標電性準位寫入到第一待測裝置的記憶裝置。步驟S12、S1N則可以依此類推,故不贅述。簡單地說,由於先前技術的修整方法是對待測裝置逐一地進行修整,因此,所需要的測試時間會隨著待測裝置的數量而增加變長。然而,漫長的測試時間會使得出貨時間變長,故仍需要有一種可以減少測試時間的修整技術方案。Please refer to Figure 1, which is a flow chart of the trimming method of the prior art. The trimming method of the prior art is to provide a detection device, so that the device to be tested can be inserted into the detection device, and trimming is performed through the built-in trimming method of the detection device, and the trimming value is found to make the device to be tested output an electrical value close to or equal to the target electrical level, and the trimming value and the target electrical level are recorded in the memory device of the device to be tested. If the first to Nth devices to be tested are to be trimmed, steps S11, S12, ..., S1N need to be executed in sequence. In step S11, the first device to be tested is first inserted into the detection device, and then the detection device executes the binary approximation method to find the trimming value, and the trimming value and the target electrical level are written into the memory device of the first device to be tested. Steps S12 and S1N can be deduced in the same way, so they are not elaborated. In short, since the prior art trimming method trims the devices to be tested one by one, the required test time increases with the number of devices to be tested. However, the long test time will make the delivery time longer, so there is still a need for a trimming technology solution that can reduce the test time.

基於本發明的至少一目的,本發明實施例提供一種修整裝置,此修整裝置係用於作為待測裝置的電子裝置中,其包括接腳組態判定單元、目標電性準位接收單元與自我修整單元。接腳組態判定單元係電性連接電子裝置的至少一第一接腳,並用於根據電子裝置的第一接腳的組態信號決定電子裝置的修整組態。目標電性準位接收單元係電性連接電子裝置的第二接腳,並用於接收目標電性準位,其中目標電性準位對應於修整組態的類型。自我修整單元係電性連接接腳組態判定單元、目標電性準位接收單元以及電子裝置的第一至第K功能裝置及記憶裝置,其中K為大於等於2的正整數。自我修整單元根據修整組態選取第一至第K功能裝置的其中一者,並對被選擇的功能裝置執行自我修整,以找出修整值使得被選擇的功能裝置能夠輸出近似或相等於目標電性準位的電性值,並將修整值、修整組態、目標電性準位記錄在記憶裝置。Based on at least one purpose of the present invention, an embodiment of the present invention provides a trimming device, which is used in an electronic device as a device to be tested, and includes a pin configuration determination unit, a target electrical level receiving unit, and a self-trimming unit. The pin configuration determination unit is electrically connected to at least one first pin of the electronic device, and is used to determine the trimming configuration of the electronic device according to the configuration signal of the first pin of the electronic device. The target electrical level receiving unit is electrically connected to the second pin of the electronic device, and is used to receive a target electrical level, wherein the target electrical level corresponds to the type of the trimming configuration. The self-trimming unit is electrically connected to the pin configuration determination unit, the target electrical level receiving unit, and the first to Kth functional devices and the memory device of the electronic device, wherein K is a positive integer greater than or equal to 2. The self-trimming unit selects one of the first to Kth functional devices according to the trimming configuration, and performs self-trimming on the selected functional device to find a trimming value so that the selected functional device can output an electrical value that is similar to or equal to the target electrical level, and records the trimming value, trimming configuration, and target electrical level in a memory device.

基於本發明的至少一目的,本發明實施例提供一種電子裝置,且此電子裝置包括上述任一個修整裝置與第一至第K功能裝置,其中記憶裝置被包括於電子裝置或修整裝置中。Based on at least one purpose of the present invention, an embodiment of the present invention provides an electronic device, and the electronic device includes any one of the above-mentioned trimming devices and first to Kth functional devices, wherein the memory device is included in the electronic device or the trimming device.

基於本發明的至少一目的,本發明實施例提供一種同時對多個待測裝置進行修整的修整方法,其中上述多個待測裝置的每一者為前述的電子裝置,且修整方法的步驟如下。對各電子裝置的第一接腳輸入組態信號;將目標電性準位給予各電子裝置;使各電子裝置進行自我修整;以及將各電子裝置進行自我修整產生的修整值、目標電性準位與修整組態寫入到電子裝置的記憶裝置。Based on at least one purpose of the present invention, an embodiment of the present invention provides a trimming method for trimming a plurality of devices under test at the same time, wherein each of the plurality of devices under test is the aforementioned electronic device, and the steps of the trimming method are as follows: inputting a configuration signal to the first pin of each electronic device; providing a target electrical level to each electronic device; allowing each electronic device to perform self-trim; and writing the trimming value, target electrical level and trimming configuration generated by the self-trim of each electronic device into a memory device of the electronic device.

綜上所述,本發明是讓修整裝置設置於電子裝置中,且可以透過平行地將組態信號與目標電性準位傳送給各個電子裝置,因此,實現了同時對多個待測裝置進行修整的目的,並且解決了先前技術對多個電子裝置進行修整需要花費冗長時間的技術問題(註,先前技術修整所花費的時間相關於作為待測裝置之電子裝置的數量,但本發明則與作為待測裝置之電子裝置的數量無關)。In summary, the present invention allows the trimming device to be set in the electronic device, and can transmit the configuration signal and the target electrical level to each electronic device in parallel, thereby achieving the purpose of trimming multiple devices under test at the same time, and solving the technical problem that the prior art requires a long time to trim multiple electronic devices (Note: the time spent on trimming in the prior art is related to the number of electronic devices as the devices under test, but the present invention is not related to the number of electronic devices as the devices under test).

為了進一步理解本發明的技術、手段和效果,可以參考以下詳細描述和附圖,從而可以徹底和具體地理解本發明的目的、特徵和概念。然而,以下詳細描述和附圖僅用於參考和說明本發明的實現方式,其並非用於限制本發明。In order to further understand the technology, means and effects of the present invention, the following detailed description and drawings may be referred to, so that the purpose, features and concepts of the present invention can be thoroughly and specifically understood. However, the following detailed description and drawings are only used for reference and explanation of the implementation of the present invention, and are not used to limit the present invention.

現在將詳細參考本發明的示範實施例,其示範實施例會在附圖中被繪示出。在可能的情況下,在附圖和說明書中使用相同的元件符號來指代相同或相似的部件。另外,示範實施例的做法僅是本發明的設計概念的實現方式的一者,下述的該等示範皆非用於限定本發明。Reference will now be made in detail to exemplary embodiments of the present invention, which are illustrated in the accompanying drawings. Where possible, the same reference numerals are used in the drawings and the specification to refer to the same or similar components. In addition, the exemplary embodiments are only one of the implementation methods of the design concept of the present invention, and the following examples are not intended to limit the present invention.

為了解決上述先前技術的技術問題,本發明實施例提供一種電子裝置,電子裝置具有修整裝置與第一至第K功能裝置,其中K為大於等於2的正整數。此修整裝置具有自我修整單元,可以透過對修整裝置的腳位組態來選取第一至第K功能裝置的一者來進行自我修整,以找出修整值使得被選取的功能裝置能夠輸出近似或相同於目標電性準位的電性值。由於是讓修整裝置設置於電子裝置中,且可以透過平行地將組態信號與目標電性準位傳送給各個電子裝置,因此,實現了同時對多個待測裝置進行修整的目的,並且解決了先前技術對多個電子裝置進行修整需要花費冗長時間的技術問題(註,先前技術修整所花費的時間相關於作為待測裝置之電子裝置的數量,但本發明則與作為待測裝置之電子裝置的數量無關)。In order to solve the technical problems of the prior art, the present invention provides an electronic device having a trimming device and first to Kth functional devices, wherein K is a positive integer greater than or equal to 2. The trimming device has a self-trimming unit, which can select one of the first to Kth functional devices for self-trimming by configuring the pins of the trimming device to find a trimming value so that the selected functional device can output an electrical value that is similar to or the same as the target electrical level. Since the trimming device is installed in the electronic device and the configuration signal and the target electrical level can be transmitted to each electronic device in parallel, the purpose of trimming multiple devices under test at the same time is achieved, and the technical problem that it takes a long time to trim multiple electronic devices in the prior art is solved (Note: the time spent on trimming in the prior art is related to the number of electronic devices under test, but the present invention is not related to the number of electronic devices under test).

請參照圖2,圖2是本發明實施例的電子裝置的方塊示意圖。於圖2中,電子裝置3包括了修整裝置30、第一至第K功能裝置341~34K與記憶裝置35,其中K為大於等於2的正整數。電子裝置在出廠前,會進行檢測,也就是做為待測裝置進行修整。修整裝置30包括接腳組態判定單元31、目標電性準位接收單元32與自我修整單元33。接腳組態判定單元31係電性連接電子裝置3的至少一組態接腳。接腳組態判定單元31用於接收組態接腳的組態信號(每一個組態接腳的組態信號可以是0、1或高阻抗的情況,且代表不同的修整組態,但本發明不以此為限制),來決定電子裝置3的修整組態。進一步地,修整組態除了表示要進行檢測的目標電性準位的類型外,更用於表示所選取的功能裝置(自第一至第K功能裝置341~34K中選取)。舉例來說,修整組態可以表示用於選取第一功能裝置34做目標電壓值的檢測,以獲取使得第一功能裝置34輸出接近或相等目標電壓值之電性值的修整值。Please refer to Figure 2, which is a block diagram of an electronic device of an embodiment of the present invention. In Figure 2, the electronic device 3 includes a trimming device 30, first to Kth functional devices 341~34K and a memory device 35, where K is a positive integer greater than or equal to 2. Before the electronic device leaves the factory, it will be tested, that is, it will be trimmed as a device under test. The trimming device 30 includes a pin configuration determination unit 31, a target electrical level receiving unit 32 and a self-trimming unit 33. The pin configuration determination unit 31 is electrically connected to at least one configuration pin of the electronic device 3. The pin configuration determination unit 31 is used to receive the configuration signal of the configuration pin (the configuration signal of each configuration pin can be 0, 1 or high impedance, and represents different trimming configurations, but the present invention is not limited thereto) to determine the trimming configuration of the electronic device 3. Furthermore, in addition to indicating the type of target electrical level to be detected, the trimming configuration is also used to indicate the selected functional device (selected from the first to the Kth functional devices 341-34K). For example, the trimming configuration can indicate the selection of the first functional device 34 for the detection of the target voltage value, so as to obtain the trimming value that makes the first functional device 34 output an electrical value close to or equal to the target voltage value.

目標電性準位接收單元32係電性連接電子裝置3的參考準位接腳,並用於接收輸入到參考準位接腳上之目標電性準位,其中目標電性準位的類型對應於修整組態。目標電性準位可以為目標電壓值、目標電流值、目標頻率值或目標阻抗值,且本發明不以此為限制。目標電性準位接收單元32可以包括緩衝器(圖未繪示)與電性連接緩衝器的雜訊濾波器(圖未繪示)。雜訊濾波器用於濾除緩衝參考準位接腳上的目標電性準位之外的雜訊,以及緩衝器用於緩衝參考準位接腳上的目標電性準位。另外,在其他實施例中,目標電性準位接收單元32也可以僅是單純的一個良好導線,而僅單純地傳導目標電性準位。The target electrical level receiving unit 32 is electrically connected to the reference level pin of the electronic device 3, and is used to receive the target electrical level input to the reference level pin, wherein the type of the target electrical level corresponds to the trimming configuration. The target electrical level can be a target voltage value, a target current value, a target frequency value, or a target impedance value, and the present invention is not limited thereto. The target electrical level receiving unit 32 may include a buffer (not shown) and a noise filter (not shown) electrically connected to the buffer. The noise filter is used to filter out noise other than the target electrical level on the buffer reference level pin, and the buffer is used to buffer the target electrical level on the buffer reference level pin. In addition, in other embodiments, the target electrical level receiving unit 32 may be simply a good conductor that simply transmits the target electrical level.

自我修整單元33係電性連接接腳組態判定單元31、目標電性準位接收單元32以及電子裝置3的第一至第K功能裝置341~34K及記憶裝置35。自我修整單元33根據修整組態選取第一至第K功能裝置341~34K的其中一者,並對被選擇的功能裝置執行自我修整(例如,但不限定是二分逼近法的修整,但也可以是進一步地使用基於類神經網路架構的自我修整演算法),以找出修整值使得被選擇的功能裝置能夠輸出近似或相等於目標電性準位的電性值,並將修整值、修整組態、目標電性準位記錄在記憶裝置35。另外,修整值為偏壓電壓修整值、偏壓電流修整值或阻抗修整值,且本發明不以此為限制。舉例來說,多數的電子裝置3具有電阻修整裝置(圖未繪示),故上述阻抗修整值為電阻修整值。The self-trim unit 33 is electrically connected to the pin configuration determination unit 31, the target electrical level receiving unit 32, the first to Kth functional devices 341-34K of the electronic device 3, and the memory device 35. The self-trim unit 33 selects one of the first to Kth functional devices 341-34K according to the trimming configuration, and performs self-trim on the selected functional device (for example, but not limited to the trimming of the binary approximation method, but can also be further based on the self-trim algorithm of the neural network architecture) to find the trimming value so that the selected functional device can output an electrical value that is close to or equal to the target electrical level, and records the trimming value, trimming configuration, and target electrical level in the memory device 35. In addition, the trimming value is a bias voltage trimming value, a bias current trimming value or an impedance trimming value, and the present invention is not limited thereto. For example, most electronic devices 3 have a resistance trimming device (not shown), so the impedance trimming value is a resistance trimming value.

進一步地,在此實施例中,自我修整單元33會比較目標電性準位(例如,以變數L_ref表示)與被選擇的功能裝置輸出的電性值(例如,以變數L_actual表示)。在目標電性準位L_ref與被選擇的功能裝置輸出的電性值L_actual的差異絕對值|L_ref-L_actual|大於差異門限值(例如,以變數delta_threshold表示),依照目標電性準位L_ref是否大於被選擇的功能裝置輸出的電性值L_actual決定增加或減少修整值trim_val。Furthermore, in this embodiment, the self-trimming unit 33 compares the target electrical level (e.g., represented by the variable L_ref) with the electrical value output by the selected functional device (e.g., represented by the variable L_actual). When the absolute difference between the target electrical level L_ref and the electrical value L_actual output by the selected functional device |L_ref-L_actual| is greater than a difference threshold (e.g., represented by the variable delta_threshold), the trimming value trim_val is increased or decreased according to whether the target electrical level L_ref is greater than the electrical value L_actual output by the selected functional device.

進一步地,在一個實施例中,假設被選擇的功能裝置輸出的電性值L_actual與修整值trim_val為正向關係(即修整值trim_val變大,被選擇的功能裝置輸出的電性值L_actual也跟著變大)的情況。若目標電性準位L_ref大於被選擇的功能裝置輸出的電性值L_actual,則將修整值trim_val遞增一個差異修整值(例如,以變數delta_trim表示),即trim_val=trim_val+delta_trim;若目標電性準位L_ref小於等於被選擇的功能裝置輸出的電性值L_actual,則將修整值trim_val遞減一個差異修整值delta_trim,即trim_val=trim_val-delta_trim。自我修整單元33會不斷地調整上述修整值trim_val,直到差異絕對值|L_ref-L_actual|小於差異門限值delta_threshold,才決定與輸出修整值trim_val。Furthermore, in one embodiment, it is assumed that the electrical value L_actual output by the selected functional device and the trim value trim_val are positively correlated (i.e., the electrical value L_actual output by the selected functional device increases as the trim value trim_val increases). If the target electrical level L_ref is greater than the electrical value L_actual output by the selected functional device, the trim value trim_val is incremented by a differential trim value (e.g., represented by a variable delta_trim), i.e., trim_val=trim_val+delta_trim; if the target electrical level L_ref is less than or equal to the electrical value L_actual output by the selected functional device, the trim value trim_val is decremented by a differential trim value delta_trim, i.e., trim_val=trim_val-delta_trim. The self-trimming unit 33 will continuously adjust the trimming value trim_val until the absolute difference value |L_ref-L_actual| is less than the difference threshold value delta_threshold, and then decide to output the trimming value trim_val.

進一步地,在一個實施例中,假設被選擇的功能裝置輸出的電性值L_actual與修整值trim_val為反向關係(即修整值trim_val變小,被選擇的功能裝置輸出的電性值L_actual也跟著變大)的情況。若目標電性準位L_ref大於被選擇的功能裝置輸出的電性值L_actual,則將修整值trim_val遞減一個差異修整值delta_trim,即trim_val=trim_val-delta_trim;若目標電性準位L_ref小於等於被選擇的功能裝置輸出的電性值L_actual,則將修整值trim_val遞增一個差異修整值,即trim_val=trim_val+delta_trim。自我修整單元33會不斷地調整上述修整值trim_val,直到差異絕對值|L_ref-L_actual|小於差異門限值delta_threshold,才決定與輸出修整值trim_val。Furthermore, in one embodiment, it is assumed that the electrical value L_actual output by the selected functional device and the trim value trim_val are inversely related (i.e., the electrical value L_actual output by the selected functional device increases as the trim value trim_val decreases). If the target electrical level L_ref is greater than the electrical value L_actual output by the selected functional device, the trim value trim_val is decreased by a differential trim value delta_trim, i.e., trim_val=trim_val-delta_trim; if the target electrical level L_ref is less than or equal to the electrical value L_actual output by the selected functional device, the trim value trim_val is increased by a differential trim value, i.e., trim_val=trim_val+delta_trim. The self-trimming unit 33 will continuously adjust the trimming value trim_val until the absolute difference value |L_ref-L_actual| is less than the difference threshold value delta_threshold, and then decide to output the trimming value trim_val.

再者,由於自我修整單元33會進行上述的比較,因此,自我修整單元33可以具有類比比較器。然而,第一至第K功能裝置341~34K的其中一者可能原來就有類比比較器,故為了減少電路面積,可以設計成自我修整單元33使用第一至第K功能裝置341~34K中一者的類比比較器來比較目標電性準位與被選擇的功能裝置輸出的電性值(即,第一至第K功能裝置341~34K中一者的類比比較器被自我修整單元33與第一至第K功能裝置341~34K中一者所共用)。Furthermore, since the self-trimming unit 33 performs the above-mentioned comparison, the self-trimming unit 33 may have an analog comparator. However, one of the first to Kth functional devices 341-34K may already have an analog comparator, so in order to reduce the circuit surface area, the self-trimming unit 33 may be designed to use the analog comparator of one of the first to Kth functional devices 341-34K to compare the target electrical level with the electrical value output by the selected functional device (i.e., the analog comparator of one of the first to Kth functional devices 341-34K is shared by the self-trimming unit 33 and one of the first to Kth functional devices 341-34K).

另外一方面,雖然上述記憶裝置35是獨立於修整裝置30之外,但在其他實施例中,記憶裝置35可以是修整裝置30的一部份,即修整裝置30包括記憶裝置35。進一步地,記憶裝置35可以是非揮發性記憶體裝置,例如快閃記憶裝置、可擦除可規劃式唯讀記憶體、電子抹除式可複寫唯讀記憶體、固態硬碟裝置等。當記憶裝置35是非揮發性記憶體裝置時,上述修整值、修整組態、目標電性準位記錄於快閃記憶裝置的宏區塊(macro block)。已經儲存好的修整值、修整組態、目標電性準位不會因為重新上電或電源關閉而消失,但已經儲存好的修整值、修整組態、目標電性準位可以選擇性地因為特定事件或依據排程重新獲取,並更新儲存。再者,第一至第K功能裝置341~34K的其中一者為參考電壓產生裝置、低壓降穩壓裝置、內部高速RC震盪裝置或濾波裝置,且本發明不以此為限制。On the other hand, although the memory device 35 is independent of the trimming device 30, in other embodiments, the memory device 35 may be a part of the trimming device 30, that is, the trimming device 30 includes the memory device 35. Furthermore, the memory device 35 may be a non-volatile memory device, such as a flash memory device, an erasable and programmable read-only memory, an electronically erasable and rewritable read-only memory, a solid state hard disk device, etc. When the memory device 35 is a non-volatile memory device, the trimming value, trimming configuration, and target electrical level are recorded in a macro block of the flash memory device. The stored trimming values, trimming configurations, and target electrical levels will not disappear due to power-on or power-off, but the stored trimming values, trimming configurations, and target electrical levels can be selectively retrieved and updated and stored due to specific events or according to a schedule. Furthermore, one of the first to Kth functional devices 341-34K is a reference voltage generating device, a low voltage dropout voltage regulator, an internal high-speed RC oscillator, or a filter device, and the present invention is not limited thereto.

請圖3,圖3是本發明實施例的同時對多個待測裝置進行修整的修整方法的流程示意圖。於本發明實施例中,修整方法中的步驟S21至S2N是平行(同時)地被執行。在步驟S2i(註:i為至N的正整數,且N為大於等於2的正整數)中,各次步驟(sub step)的說明如下。首先,先給予第i待測裝置(也就是第i電子裝置,其中第i電子裝置的架構如同上述圖2的電子裝置3)目標電性準位,進一步地,是將目標電性準位施加於第i電子裝置的參考準位接腳,以讓第i電子裝置的目標電性準位接收單元接收目標電性準位。Please refer to FIG. 3 , which is a schematic flow chart of a trimming method for trimming a plurality of devices under test at the same time according to an embodiment of the present invention. In the embodiment of the present invention, steps S21 to S2N in the trimming method are executed in parallel (simultaneously). In step S2i (Note: i is a positive integer from N, and N is a positive integer greater than or equal to 2), the description of each sub step is as follows. First, a target electrical level is given to the i-th device under test (that is, the i-th electronic device, wherein the structure of the i-th electronic device is the same as the electronic device 3 in FIG. 2 above), and further, the target electrical level is applied to the reference level pin of the i-th electronic device so that the target electrical level receiving unit of the i-th electronic device receives the target electrical level.

然後,透過將組態信號施加於第i電子裝置的組態接腳來設定第i電子裝置的修整組態,以選取第i電子裝置的多個功能裝置的一者。之後,第i電子裝置透過其自我修整單元對第i電子裝置中被選取的功能裝置進行自我修整,以找出修整值使得被選取的功能裝置輸出近似或等於目標電性準位之電性值。最後,將上述修整值、修整組態與目標電性準位寫入到記憶裝置中,如此,第i電子裝置的其中一個功能裝置之後若要輸出接近或相同上述目標電性準位的電性值,則可以透過記憶裝置的記錄內容找出相應的修整值,使其可以順利輸出接近或相同上述目標電性準位的電性值。附帶說明的是,上述將目標電性準位給予第i電子裝置的次步驟與設定第i電子裝置之修整態的次步驟彼此可以互相交換,且本發明不以其先後順序為限制。Then, the trimming configuration of the i-th electronic device is set by applying a configuration signal to the configuration pin of the i-th electronic device to select one of the multiple functional devices of the i-th electronic device. Afterwards, the i-th electronic device performs self-trim on the selected functional device in the i-th electronic device through its self-trim unit to find a trimming value so that the selected functional device outputs an electrical value that is close to or equal to the target electrical level. Finally, the above trimming value, trimming configuration and target electrical level are written into the memory device. In this way, if one of the functional devices of the i-th electronic device is to output an electrical value close to or the same as the above target electrical level in the future, the corresponding trimming value can be found through the recorded content of the memory device, so that it can smoothly output an electrical value close to or the same as the above target electrical level. It should be noted that the above-mentioned step of providing the target electrical level to the i-th electronic device and the step of setting the trimming state of the i-th electronic device can be interchanged with each other, and the present invention is not limited to the order of the steps.

綜合以上所述,本發明實施例提供的修整裝置、方法與電子裝置可以允許多個電子裝置同時地(或稱平行地)進行修整,故能夠減少電子裝置之進行修整的全部花費時間。再者,本發明透過修整組態(透過輸入的組態信號)來選取對作為矽智財的多個功能裝置的其中一者進行測試,故本發明無需用使用檢測裝置提供選擇信號來測試那種功能裝置,且甚至不用額外的檢測裝置。In summary, the trimming device, method and electronic device provided by the embodiments of the present invention can allow multiple electronic devices to be trimmed simultaneously (or in parallel), thereby reducing the total time spent on trimming the electronic devices. Furthermore, the present invention selects one of the multiple functional devices as silicon intellectual property to be tested through the trimming configuration (through the input configuration signal), so the present invention does not need to use a detection device to provide a selection signal to test that functional device, and even does not need an additional detection device.

應當理解,本文描述的示例和實施例僅用於說明目的,並且鑑於其的各種修改或改變將被建議給本領域技術人員,並且將被包括在本申請的精神和範圍以及所附權利要求的範圍內。It should be understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes thereto will be suggested to those skilled in the art and are to be included within the spirit and scope of the present application and the scope of the appended claims.

S11~S1N、S21~S2N:步驟 3: 電子裝置 30:修整裝置 31:接腳組態判定單元 32:目標電性準位接收單元 33:自我修整單元 341:第一功能裝置 342:第二功能裝置 34K:第K功能裝置 35:記憶裝置S11~S1N, S21~S2N: Step 3: Electronic device 30: Trimming device 31: Pin configuration determination unit 32: Target electrical level receiving unit 33: Self-trimming unit 341: First functional device 342: Second functional device 34K: Kth functional device 35: Memory device

提供的附圖用以使本發明所屬技術領域具有通常知識者可以進一步理解本發明,並且被併入與構成本發明的說明書的一部分。附圖示出了本發明的示範實施例,並且用以與本發明的說明書一起用於解釋本發明的原理。The accompanying drawings are provided to enable a person with ordinary knowledge in the art to which the present invention belongs to further understand the present invention, and are incorporated into and constitute a part of the specification of the present invention. The accompanying drawings show exemplary embodiments of the present invention, and are used together with the specification of the present invention to explain the principles of the present invention.

圖1是先前技術的修整方法的流程示意圖。FIG. 1 is a flow chart of a prior art trimming method.

圖2是本發明實施例的電子裝置的方塊示意圖。FIG. 2 is a block diagram of an electronic device according to an embodiment of the present invention.

圖3是本發明實施例的同時對多個待測裝置進行修整的修整方法的流程示意圖。FIG3 is a schematic flow chart of a trimming method for trimming a plurality of DUTs simultaneously according to an embodiment of the present invention.

3:電子裝置 3: Electronic devices

30:修整裝置 30: Trimming device

31:接腳組態判定單元 31: Pin configuration determination unit

32:目標電性準位接收單元 32: Target electrical level receiving unit

33:自我修整單元 33: Self-repair unit

341:第一功能裝置 341: First functional device

342:第二功能裝置 342: Second functional device

34K:第K功能裝置 34K: Kth functional device

35:記憶裝置 35: Memory device

Claims (10)

一種修整裝置(30),係用於作為一待測裝置的一電子裝置(3)中,其包括: 一接腳組態判定單元(31),係電性連接該電子裝置(3)的至少一第一接腳,用於根據該電子裝置(3)的該第一接腳的一組態信號決定該電子裝置(3)的一修整組態; 一目標電性準位接收單元(32),係電性連接該電子裝置(3)的一第二接腳,用於接收一目標電性準位,其中該目標電性準位的一類型對應於該修整組態;以及 一自我修整單元(33),係電性連接該接腳組態判定單元(31)、該目標電性準位接收單元(32)以及該電子裝置(3)的一第一至第K功能裝置(341~34K)及一記憶裝置(35),其中K為大於等於2的正整數; 其中該自我修整單元(33)根據該修整組態選取該第一至第K功能裝置(341~34K)的其中一者,並對被選擇的一功能裝置執行一自我修整,以找出一修整值使得被選擇的該功能裝置能夠輸出近似或相等於該目標電性準位的一電性值,並將該修整值、該修整組態、該目標電性準位記錄在該記憶裝置(35)。 A trimming device (30) is used in an electronic device (3) as a device to be tested, comprising: a pin configuration determination unit (31) electrically connected to at least a first pin of the electronic device (3) and used to determine a trimming configuration of the electronic device (3) according to a configuration signal of the first pin of the electronic device (3); a target electrical level receiving unit (32) electrically connected to a second pin of the electronic device (3) and used to receive a target electrical level, wherein a type of the target electrical level corresponds to the trimming configuration; and A self-trimming unit (33) is electrically connected to the pin configuration determination unit (31), the target electrical level receiving unit (32), and a first to Kth functional device (341-34K) of the electronic device (3) and a memory device (35), wherein K is a positive integer greater than or equal to 2; wherein the self-trimming unit (33) selects one of the first to Kth functional devices (341-34K) according to the trimming configuration, and performs a self-trimming on the selected functional device to find a trimming value so that the selected functional device can output an electrical value that is similar to or equal to the target electrical level, and records the trimming value, the trimming configuration, and the target electrical level in the memory device (35). 如請求項1所述的修整裝置(30),其中該目標電性準位為一目標電壓值、一目標電流值、一目標頻率值或一目標阻抗值。A trimming device (30) as described in claim 1, wherein the target electrical level is a target voltage value, a target current value, a target frequency value or a target impedance value. 如請求項1所述的修整裝置(30),其中該修整值為一偏壓電壓修整值、一偏壓電流修整值或一阻抗修整值。A trimming device (30) as described in claim 1, wherein the trimming value is a bias voltage trimming value, a bias current trimming value or an impedance trimming value. 如請求項1所述的修整裝置(30),其中該自我修整單元(33)比較該目標電性準位與被選擇的該功能裝置輸出的該電性值,在該目標電性準位與被選擇的該功能裝置輸出的該電性值的一差異絕對值大於一差異門限值,依照該目標電性準位是否大於被選擇的該功能裝置輸出的該電性值決定增加或減少該修整值,以及在該差異絕對值小於該差異門限值,決定與輸出該修整值。A trimming device (30) as described in claim 1, wherein the self-trimming unit (33) compares the target electrical level with the electrical value output by the selected functional device, and when an absolute value of a difference between the target electrical level and the electrical value output by the selected functional device is greater than a difference threshold value, determines to increase or decrease the trimming value according to whether the target electrical level is greater than the electrical value output by the selected functional device, and when the absolute value of the difference is less than the difference threshold value, determines and outputs the trimming value. 如請求項1所述的修整裝置(30),其中該自我修整單元(33)使用該第一至第K功能裝置(341~34K)中的一類比比較器比較該目標電性準位與被選擇的該功能裝置輸出的該電性值。A trimming device (30) as described in claim 1, wherein the self-trimming unit (33) uses an analog comparator in the first to Kth functional devices (341-34K) to compare the target electrical level with the electrical value output by the selected functional device. 如請求項1所述的修整裝置(30),其中該修整裝置(30)更包括該記憶裝置(35)。The trimming device (30) as described in claim 1, wherein the trimming device (30) further includes the memory device (35). 如請求項1所述的修整裝置(30),其中該記憶裝置(35)為一快閃記憶裝置,且該修整值、該修整組態、該目標電性準位記錄於該快閃記憶裝置的一宏區塊(macro block)。The trimming device (30) as described in claim 1, wherein the memory device (35) is a flash memory device, and the trimming value, the trimming configuration, and the target electrical level are recorded in a macro block of the flash memory device. 一種電子裝置(3),包括: 如請求項1至7其中一項所述的修整裝置(30);以及 該第一至第K功能裝置(341~34K); 其中該記憶裝置(35)被包括於該電子裝置(3)或該修整裝置(30)中。 An electronic device (3), comprising: a trimming device (30) as described in any one of claims 1 to 7; and the first to Kth functional devices (341-34K); wherein the memory device (35) is included in the electronic device (3) or the trimming device (30). 如請求項8所述的電子裝置(3),其中該第一至第K功能裝置(341~34K)的其中一者為一參考電壓產生裝置、一低壓降穩壓裝置、一內部高速RC震盪裝置或一濾波裝置。An electronic device (3) as described in claim 8, wherein one of the first to Kth functional devices (341-34K) is a reference voltage generating device, a low voltage dropout regulator device, an internal high-speed RC oscillator device or a filter device. 一種同時對多個待測裝置進行修整的修整方法,其中該等待測裝置的每一者為如請求項8所述的該電子裝置(3),且該修整方法包括: 對各該電子裝置(3)的該第一接腳輸入該組態信號; 將該目標電性準位給予各該電子裝置(3); 使各該電子裝置(3)進行該自我修整;以及 將各該電子裝置(3)進行該自我修整產生的該修整值、該目標電性準位與該修整組態寫入到該電子裝置(3)的該記憶裝置(35)。 A trimming method for trimming a plurality of devices to be tested simultaneously, wherein each of the devices to be tested is the electronic device (3) as described in claim 8, and the trimming method comprises: Inputting the configuration signal to the first pin of each of the electronic devices (3); Giving the target electrical level to each of the electronic devices (3); Making each of the electronic devices (3) perform the self-trim; and Writing the trimming value, the target electrical level and the trimming configuration generated by the self-trim of each of the electronic devices (3) into the memory device (35) of the electronic device (3).
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