TWI735712B - Dividing device and method - Google Patents

Abstract

In the case of using a simple device structure and does not reduce the cooling efficiency, it is divided well Wafer and remove the slack of the tape.

A dividing device is to pass through the die-bonding film tape (DAF tape) to the ring frame The supported wafer is divided from the modified layer as a starting point by the expansion of the DFA tape. The dividing device is formed to have the following structure: a workbench that holds the wafer through the DAF tape; frame holding Mechanism, holding the ring frame around the wafer; dividing box, accommodating table and frame holding mechanism; cold air supply mechanism, supplying cold air to the dividing box to set it as a cold air atmosphere; lifting mechanism, holding the table and frame mechanism Relatively close and far away; and shrinkage mechanism, which uses far infrared rays to thermally shrink the loose DAF tape around the wafer in a cold gas environment to fix the gap between the wafers.

Description

Dividing device and method Field of invention

The invention relates to a dividing device and a dividing method for dividing a wafer into individual wafers.

Background of the invention

Conventionally, as a dividing device, there is known a device that divides a wafer supported on a ring frame through an adhesive tape and divides the wafer along the starting point of division formed on the wafer by expanding the tape (for example, refer to Patent Document 1. ,2). In these dividing devices, the wafer is held on the dividing table, the ring frame is held on the ring table, and the wafer is pushed up relative to the ring frame. This expands the tape in the radial direction and applies an external force from the tape to the starting point of the wafer to divide the wafer into individual wafers along the starting point.

Prior art literature Patent literature

Patent Document 1: Japanese Patent Laid-Open No. 2016-004832

Patent Document 2: Japanese Patent Laid-Open No. 2007-027250

Summary of the invention

However, even if the tape is expanded in a normal-temperature gas environment, the wafer may still be left and only the tape may be stretched, and the wafer may not be well divided. Therefore, the following method has been proposed: a cooling device is provided in the dividing device to expand the tape in a cold gas atmosphere to divide the wafer. In addition, in order to fix the gap between the wafers after the wafer is divided, it is necessary to thermally shrink the slack of the tape around the wafer due to the expansion of the tape. However, considering the decrease in cooling efficiency, it is usually separated from the cooling equipment. Remove the slack of the tape in other units. However, when the divided wafers are transported from the cooling equipment, there is a problem that scratches or defects are generated on the side surfaces of the wafers due to the collision of the wafers and the like.

The present invention is an invention made in view of the above-mentioned problems. One of its objects is to provide a dividing device and a dividing method that can be constructed using a simple device without reducing cooling efficiency. Divide the wafer well and remove the slack of the tape.

One aspect of the dividing device of the present invention is to expand the tape of the integrated workpiece group by attaching a wafer with a dividing starting point to the tape, and dividing the wafer with the dividing starting point as the starting point, wherein the The tape is applied by blocking the opening of the ring frame. The dividing device is characterized by having: a frame holding mechanism for holding the ring frame; a workbench having a holding surface that is held across the frame holding mechanism The tape of the workpiece group to hold the wafer; The dividing room contains the frame holding mechanism and the workbench; the opening and closing mechanism opens and closes a part of the dividing room to carry in and out the workpiece group in the divided room; the cold air supply mechanism supplies cold air to the divided room to divide the divided room The room is set in a cold air environment; a lifting mechanism, in which the workbench and the frame holding mechanism are relatively close to and away from each other in a direction orthogonal to the holding surface; and a retracting mechanism, which is attached to the existing The tape between the outer periphery of the wafer on the tape expanded in the dividing chamber and the inner periphery of the ring frame is irradiated with far-infrared rays to shrink it to fix the interval between adjacent wafers. In the dividing room, the worktable is separated from the frame holding mechanism and the tape is expanded to divide the wafer, and the holding surface is held with the expanded tape to bring the worktable and the frame holding mechanism close to each other. The loosened tape between the outer periphery of the wafer and the inner periphery of the ring frame is irradiated with far infrared rays to shrink it, and the interval between adjacent wafers is fixed.

According to this configuration, the tape can be expanded in a state where the dividing chamber has been set to a cold air atmosphere, and the wafer can be divided into individual wafers using the dividing starting point as the starting point. At this time, since the tape and the wafer are cooled together, it becomes difficult for the tape to stretch at the attaching position of the wafer, and the external force when the tape expands is directly applied to the wafer, making it easy to split. In addition, after the wafer is divided, the slack of the tape around the wafer can be thermally contracted by irradiation of far infrared rays in the dividing chamber. Since the tape is partially heated by far-infrared rays, it is possible to suppress While the temperature rises, the slack of the tape is well removed in a cooling gas environment. In addition, since the division of the wafer and the thermal shrinkage of the tape are performed in the division chamber, the divided wafers can be transported with the interval between the divided wafers fixed, so that the quality caused by the collision of the wafers can be prevented. reduce.

The dividing method of one aspect of the present invention is a method of dividing a wafer using the above-mentioned dividing device. The dividing method includes a holding step of carrying the group of workpieces into the dividing chamber, and holding the workpieces by the frame holding mechanism Group; cooling step, supply cold air to the dividing chamber to cool the workpiece group; dividing step, after the cooling step, make the table and the frame holding mechanism move away from each other, and expand the tape to divide the crystal Circle; and a shrinking step. After the dividing step, the tape is held on the holding surface in the dividing chamber, and the loosened tape between the outer periphery of the wafer and the inner periphery of the ring frame is irradiated with far infrared rays to make The tape shrinks.

According to the present invention, the wafer can be divided in a cold air atmosphere and the tape can be relaxed and thermally contracted with far infrared rays. This can prevent the reduction in cooling efficiency due to the simple device configuration and prevent the wafer from being rubbed by the divided wafer. Quality degradation caused by collisions, etc.

1: Split device

10: Split box

11: On the box

12: lower box

13, 67: Division room

14: Opening and closing mechanism

15, 68: cold air supply mechanism

20: Workbench

21: Pillar

22: perforated plate

23: keep noodles

24: On-off valve

25: Roller part

26: Attraction source

30: Frame holding mechanism

31: Mounting table

32: cover

33, 34: opening

36, 61: Lifting mechanism

37: cylinder rod

40, 64: shrinkage mechanism

41: Spiral Arm

42: Irradiation Department

43: Up and down movement part

44, 65: Rotating motor

50: control mechanism

55: modified layer (segmentation starting point)

56: DAF (bonded film)

62: drive part

C: chip

F: ring frame

L: Pre-divided line

T: DAF tape

W: Wafer

WS: Workpiece group

Fig. 1 is a perspective view of the dividing device of this embodiment.

Figure 2 shows the splitting action and heat shrinking action of the splitting device of the comparative example Illustrating.

Fig. 3 is an explanatory diagram of the dividing operation performed by the dividing device of the present embodiment.

Fig. 4 is a schematic side view of a dividing device of a modified example.

The form used to implement the invention

Hereinafter, the dividing device of this embodiment will be described with reference to the attached drawings. Fig. 1 is a perspective view of the dividing device of this embodiment. In addition, the dividing device is not limited to the configuration described in FIG. 1, and can be appropriately changed.

As shown in FIG. 1, the dividing device 1 is configured to pass through a die attach film (Dai Attach Film, DAF) tape T and supported on the ring frame F of the wafer W, in a cold air atmosphere by the DAF tape T The expansion is divided into individual wafers C (refer to FIG. 3B). In addition, the dividing device 1 is configured to remove the DAF tape T generated between the outer periphery of the wafer W and the inner periphery of the ring frame F when the expansion of the DAF tape T is released by heat shrink. relaxation. In this way, only the position where the DAF tape T is stretched and relaxed is thermally contracted, and the gap between the wafers C can be maintained so that the wafers C after the wafer W are divided will not contact each other and be damaged.

A grid-like planned dividing line L is provided on the surface of the wafer W, and various elements (not shown) are formed in each area divided by the planned dividing line L. Furthermore, the wafer W may also be a semiconductor wafer in which ICs, LSIs, and other elements are formed on a semiconductor substrate such as silicon, gallium arsenide, etc., or it may be a ceramic, glass, or sapphire inorganic material substrate formed with LEDs, etc. Optical element wafers for optical elements. Wafer W is attached to the ring frame On the DAF tape T of F, the workpiece group WS integrated with the wafer W, the ring frame F and the DAF tape T is carried into the dividing device 1.

The ring frame F of the workpiece group WS has the opening part closed by the heat-shrinkable DAF tape T, and the wafer W is attached to the DAF tape T inside the opening part. In the inside of the wafer W, a modified layer 55 (refer to FIG. 3A) is formed as a starting point of division along the planned division line L. Furthermore, the modified layer 55 refers to a state in which the density, refractive index, mechanical strength, and other physical properties inside the wafer W become different from the surroundings by laser irradiation, and the intensity is lower than that of the surroundings. area. The modified layer 55 may be, for example, a melt-processed area, a cracked area, a dielectric breakdown area, or a refractive index change area, or a mixed area of these areas.

In addition, in the following description, although the modified layer 55 (refer to FIG. 3A) formed in the inside of the wafer W is used as an example of the starting point of division, it is not limited to this structure. The starting point of division may be any starting point at the time of division of the wafer W, and may be constituted by, for example, a laser processing groove, a cutting groove, or a scribe line. In addition, the DAF tape T is not particularly limited as long as it has DAF56 in the surface area and has stretchability and heat shrinkability. The tape base of the DAF tape T is preferably formed of, for example, PO (Polyolefin) or PVC (Polyvinyl Chloride) which is easy to shrink by far infrared rays.

The dividing device 1 is provided with a dividing box 10 composed of an upper box 11 and a lower box 12, and a dividing chamber 13 for dividing the wafer W is formed in the dividing box 10. The upper box 11 and the lower box 12 are connected through the opening and closing mechanism 14, and the upper box 11 and the lower box 12 can be opened by the opening and closing mechanism 14 to form a workpiece Moving in and out of group WS. The opening and closing mechanism 14 is constituted by a cylinder, and connects the upper case 11 to a cylinder rod protruding from the cylinder provided in the lower case 12. A cold air supply mechanism 15 is provided in the upper box 11, and the cold air supply mechanism 15 supplies cold air into the divided chamber 13 so as to form the inside of the divided chamber 13 into a cold air atmosphere.

A worktable 20 is arranged in the dividing chamber 13 (lower box 12). The worktable 20 can suck and hold the wafer W via the DAF tape T of the workpiece group WS. A frame holding mechanism 30 is arranged around the worktable 20. The frame holding mechanism 30 is an annular frame F for holding the workpiece group WS. The table 20 is supported by a plurality of pillar parts 21, and a porous plate 22 is arranged on the upper surface of the table 20. With this porous plate 22, a holding surface 23 for sucking and holding the wafer W is formed on the upper surface of the table 20. The holding surface 23 is connected to a suction source 26 (see FIG. 3A) through a flow path in the table 20, and the wafer W is sucked and held by the negative pressure generated by the holding surface 23.

In addition, an on-off valve 24 (see FIG. 3A) is provided in the flow path communicating from the holding surface 23 to the suction source 26, and the on-off valve 24 can switch between the holding surface 23 to hold and cancel the suction of the wafer W. At the outer peripheral edge of the table 20, a plurality of roller parts 25 are rotatably provided to cover the entire circumference. The plurality of roller parts 25 can make rotational contact with the DAF tape T around the wafer W from the lower side in a state where the wafer W has been held on the holding surface 23. By rotating and contacting the DAF tape T with the plurality of roller parts 25, the friction of the DAF tape T generated on the outer peripheral edge of the table 20 when the DAF tape T is expanded can be suppressed.

The frame holding mechanism 30 is formed by sandwiching the ring frame F on the mounting table 31 with the cover plate 32 from above to hold the ring frame F on the mounting table 31. In the center of the mounting table 31 and the cover plate 32, circular openings 33 and 34 having a larger diameter than the table 20 are respectively formed. When the cover plate 32 has been covered on the mounting table 31, the ring frame F is held by the cover plate 32 and the mounting table 31, and a part of the wafer W and DAF tape T is removed from the mounting work The circular openings 33 and 34 of the table 31 and the cover plate 32 are exposed to the outside.

The frame holding mechanism 30 is in a state where the cover plate 32 is covered on the ring frame F on the mounting table 31, and the cover plate 32 is fixed to the mounting table 31 by, for example, a clamp part not shown. . The frame holding mechanism 30 is supported by an elevating mechanism 36 that makes the table 20 and the frame holding mechanism 30 relatively move away from and approach each other in a direction orthogonal to the holding surface 23 in the partition chamber 13. The lifting mechanism 36 is composed of four electric cylinders, and the four electric cylinders support the four corners of the mounting table 31. By controlling the protrusion amount of the cylinder rod 37 of the lifting mechanism 36, the distance between the wafer W on the table 20 and the frame holding mechanism 30 can be adjusted.

A shrinking mechanism 40 is provided in the dividing chamber 13 (upper box 11), and the shrinking mechanism 40 is used to shrink the slack generated in the DAF tape T. The shrink mechanism 40 is provided on the center axis of the wafer W, and a pair of irradiating parts 42 are arranged at both ends of the revolving arm 41 so as to sandwich the center of the wafer W and face each other. The irradiating part 42 is configured to irradiate a spot of far infrared rays, and the far infrared rays are far infrared rays having a peak waveform of 3 μm to 25 μm, which is difficult to be absorbed by a metal material. In this way, it is possible to suppress the By heating, the slack of the DAF tape T between the outer circumference of the wafer W and the inner circumference of the ring frame F is heated to perform thermal shrinkage.

In addition, the revolving arm 41 of the retracting mechanism 40 is provided with an up-and-down action part 43 and a rotating motor 44. The up-and-down action part 43 moves the pair of irradiation parts 42 up and down, and the rotating motor 44 makes the pair of irradiation parts 42 circulate around It rotates along the center axis of the wafer W. The vertical movement part 43 adjusts the height of the pair of irradiation parts 42 with respect to the DAF tape T in accordance with the lifting movement of the frame holding mechanism 30. The rotating motor 44 winds the pair of irradiating parts 42 so as to cover the entire circumference to heat the slack of the DAF tape T around the wafer W. The pair of irradiating parts 42 can be appropriately positioned with respect to the DAF tape T by the up-and-down moving part 43 and the rotation motor 44, and thereby the DAF tape T around the wafer W can be heated well.

In addition, the dividing device 1 is provided with a control mechanism 50 for integrating the various parts of the control device. The control mechanism 50 is composed of a processor, a memory, and the like that execute various processes. The memory is composed of one or more storage media, such as ROM (Read Only Memory), RAM (Random Access Memory), etc., depending on the purpose. The control mechanism 50 can be used to relatively move the table 20 and the frame holding mechanism 30 to control the expansion action of the DAF tape T, and the slack of the DAF tape T can be removed by the pair of irradiation parts 42 of the contraction mechanism 40 to control the DAF tape T's contraction action.

In the dividing device 1 like this, the frame holding mechanism 30 is lowered in a state of holding the ring frame F in the cold air atmosphere in the dividing chamber 13, thereby removing the table 20 from the cover plate 32 and Placement worker The circular openings 33 and 34 of the work table 31 protrude. By pushing up the table 20 relative to the frame holding mechanism 30, the DAF tape T can be expanded in the radial direction to divide the wafer W into individual wafers C (see FIG. 3B). In addition, when the frame holding mechanism 30 is raised to release the expansion of the DAF tape T, the tension of the DAF tape T is relaxed. At this time, the DAF tape T can be heat-shrinked by the far infrared rays from the irradiation unit 42 to prevent the DAF tape T around the wafer W from slackening.

However, as shown in FIG. 2A, if the wafer W is to be divided in a normal-temperature gas environment, the DAF 56 will be stretched during the expansion of the DAF tape T, and the wafer W cannot be divided well. That is, when the DAF tape T is expanded, the wafer W is left and the DAF 56 and the tape base material are stretched together, and the external force generated by the expansion of the DAF tape T cannot be transmitted to the wafer W. Also, since even tapes other than DAF tape T attach the wafer W to the adhesive on the tape base material, the wafer W is left and only the adhesive is stretched together with the tape base material. Therefore, the wafer W cannot be divided well. Especially in a normal temperature gas environment, since the DAF tape between the outer periphery of the wafer and the inner periphery of the ring frame or other tapes other than the DAF tape is expanded, the expansion of the tape does not contribute to the division of the wafer.

Therefore, a conceivable configuration is to suppress the elongation of the DAF 56 in a cold air atmosphere as shown in FIG. 2B to divide the wafer W and the DAF 56 integrally. Due to the expansion of the DAF tape T in a cold air atmosphere, the DAF tape T becomes more difficult to extend at the position where the wafer W is attached than where the wafer W is not attached. As a result, when the DAF tape T is expanded, the DAF 56 becomes difficult to extend at the position where the wafer W is attached, and can be The wafer W and DAF56 are divided integrally. Similarly, in other tapes, since the adhesive of the tape can also be cooled to prevent the adhesive from softening, the wafer W can be well divided by the expansion of the tape.

However, in a cold air atmosphere, a general heater such as blowing hot air cannot be used when the DAF tape T is heat-shrinked. Therefore, in consideration of cooling efficiency, it is usually formed to provide a heating device that causes the relaxation and heat shrinkage of the DAF tape T in a separate area from the cooling device that produces the cold air atmosphere. However, since the wafer W is transferred from the cooling device to the heating device before the slack of the DAF tape T has been removed, the slack of the DAF tape T may cause the wafers C to rub against each other and cause the wafers C to collide with each other. Scratches or defects on the side. In addition, there is a problem that the structure of the device becomes complicated and the size of the device is increased.

Therefore, in this embodiment, the wafer W is divided together with the DAF 56 by expanding the DAF tape T in a cold air atmosphere, and the wafer W is further divided from the irradiation section 42 in the same chamber after the division of the wafer W. The slack of the DAF tape T is spot-irradiated with far-infrared rays. Since far-infrared rays do not have heat and do not heat air, it is possible to heat only the irradiation position of the DAF tape T without increasing the temperature in the room. Thereby, it is possible to divide the wafer W well in a cold gas environment, and while maintaining the cold gas environment, the relaxation and thermal shrinkage of the DAF tape T can be suppressed, and the cooling efficiency can be suppressed and the wafer W can be prevented from being damaged by the divided wafer W. Quality degradation caused by scratches, etc.

Hereinafter, referring to FIG. 3, the dividing operation performed by the dividing device of this embodiment will be described. Figure 3 is the dividing device of this embodiment An explanatory diagram of the division operation performed. Each shows that FIG. 3A is an example of the holding step and the cooling step, FIG. 3B is an example of the dividing step, and FIG. 3C is an example of the tape shrinking step.

As shown in Fig. 3A, the holding step is first implemented. In the holding step, the workpiece group WS is carried into the dividing chamber 13 of the dividing box 10, the wafer W is placed on the table 20 through the DAF tape T, and the ring frame F around the wafer W Hold by the frame holding mechanism 30. In addition, when the workpiece group WS is carried into the division box 10, the division box 10 is closed by the opening and closing mechanism 14, and the division chamber 13 is hermetically sealed so as not to allow outside air to enter. At this time, the on-off valve 24 communicating with the table 20 is closed, and the suction force from the suction source 26 to the table 20 is blocked.

Next, a cooling step is implemented after the holding step. In the cooling step, cold air is supplied into the division chamber 13 from the supply port of the cold air supply mechanism 15 of the division box 10, and the workpiece group WS is exposed to the cold air in the division chamber 13 and cooled. At this time, since the wall surface of the division box 10 is formed by a heat insulating material or the like, it becomes possible to cool the inside of the division chamber 13 well. Thereby, the wafer W and the DAF tape T can be hardened, and the DAF tape T becomes more difficult to extend at the position where the wafer W is attached than the position where the wafer W is not attached. That is, the wafer W and the DAF 56 are integrated at the attaching position of the wafer W.

As shown in FIG. 3B, the dividing step is implemented after the cooling step. In the dividing step, the frame holding mechanism 30 is lowered in a cold air atmosphere, so that the table 20 and the frame holding mechanism 30 are separated from each other. As a result, the DAF tape T can be expanded in the radial direction, so that external force acts on the modified layer 55 whose strength has been reduced (see FIG. 3A), and the modified layer 55 is used as a starting point to remove Wafer W is divided into wafers C together with DAF56. At this time, since the DAF56 and the wafer W have been integrated by the cold air atmosphere in the dividing chamber 13, the DAF56 will not be stretched with the expansion of the DAF tape T, but the DAF56 can be combined with the wafer W. The circle W is divided together.

As shown in FIG. 3C, the shrinking step is implemented after the dividing step. In the shrinking step, when the wafer W is divided into individual wafers C, the on-off valve 24 is opened to generate attractive force on the table 20. In a state where the wafer C has been sucked and held by the table 20 with the DAF tape T interposed therebetween, the frame holding mechanism 30 can be raised so that the table 20 and the frame holding mechanism 30 can be brought close. Therefore, on the one hand, on the table 20, the DAF tape T is sucked and held in a state where the wafer C has been spaced apart. On the other hand, between the outer periphery of the wafer W and the inner periphery of the ring frame F, the The tension of the DAF tape T is relaxed and slack is generated.

At this time, the shrinking mechanism 40 is positioned above the wafer W, and the pair of irradiating parts 42 are rotated by the rotating motor 44 (refer to FIG. 1) to start the thermal shrinkage of the relaxation of the DAF tape T. The height of the irradiation section 42 can be adjusted by the vertical movement section 43 (refer to FIG. 1) in accordance with the movement of the frame holding mechanism 30, and the outer periphery of the wafer W and the inner periphery of the ring frame F are aligned from a pair of irradiation sections 42 The loose DAF tape T in between irradiates far infrared rays. Since only the DAF tape T around the wafer W is thermally shrunk, even if the suction holding of the table 20 is released, the interval between the adjacent wafers C can be fixed in a maintained state.

In addition, since there is no possibility of heating the surrounding air due to far infrared rays that do not have heat, only the DAF tape T is partially heated Because of heat, it becomes possible to suppress the temperature rise in the division chamber 13. In this way, the division of the wafer W and the thermal shrinkage of the DAF tape T can be continuously performed in a state where the inside of the division box 10 has been maintained in a cold air atmosphere. According to this, the device configuration can be simplified, and it is possible to prevent the quality degradation caused by the scratch of the wafer C after the wafer W is divided. In addition, although the structure is formed to supply cold air to the divided chamber 13 in the cooling step, it may be formed to continue to supply cold air to the divided chamber 13 in the dividing step or the holding step. In this way, it is possible to more reliably fix the chips that have been separated from each other.

As described above, in the dividing apparatus 1 of this embodiment, the DAF tape T can be expanded with the inside of the dividing chamber 13 set to a cold gas atmosphere, and the wafer W can be divided into individual wafers using the dividing starting point as the starting point. C. At this time, since the DAF tape T is cooled together with the wafer W, it becomes difficult for the DAF tape T to be stretched at the bonding position of the wafer, so that the external force when the DAF tape T expands is directly applied to the wafer W, and It becomes easy to divide. In addition, after the wafer W is divided, the DAF tape T around the wafer W can be slack and heat-shrinked by irradiation of far infrared rays in the dividing chamber 13. Since the DAF tape T is partially heated by far infrared rays, it is possible to suppress the temperature rise of the division chamber 13 and to remove the slack of the DAF tape T well in a cooling gas environment. In addition, since the division of the wafer W and the thermal shrinkage of the DAF tape T are performed in the division chamber 13, the gap between the divided wafers C can be transported while the gap between the wafers C is fixed. Quality degradation caused by scratches, etc.

In addition, in this embodiment, although the structure is formed to accommodate the lifting mechanism and the retracting mechanism in the divided chamber, it is not limited to this constitute. The elevating mechanism may be configured to allow the frame holding mechanism to be separated from the workbench and carry out in the divided room, and the driving part of the elevating mechanism may be provided outside the divided room. Moreover, as long as the shrinking mechanism has a structure capable of irradiating the tape with far infrared rays in the dividing chamber, the rotating motor of the shrinking mechanism may be installed outside the dividing chamber. As shown in FIG. 4, the driving part 62 of the lifting mechanism 61 or the rotating motor 65 of the shrinking mechanism 64 are arranged outside the division chamber 67, so that there is no case that the division chamber 67 is heated due to the driving heat. The divided chamber 67 can be made smaller and the cooling time of the cold air supply mechanism 68 can be shortened.

In addition, in the present embodiment, although it is a structure in which the elevating mechanism raises and lowers the frame holding mechanism with respect to the table, it is not limited to this structure. The elevating mechanism may be a structure capable of making the table and the frame holding mechanism relatively close to and away from each other, and may be, for example, a structure in which the table can be raised and lowered with respect to the frame holding mechanism. In addition, the elevating mechanism is not limited to an electric cylinder, and may be constituted by other actuators.

In addition, in this embodiment, although the DAF tape in which DAF is laminated|stacked on the tape base material is illustrated and demonstrated as an adhesive tape, it is not limited to this structure. The tape may be a tape in which an adhesive layer is formed on a tape substrate that undergoes heat shrinkage.

In addition, in this embodiment, although it is a structure formed into the upper tank and the lower tank to form a divided chamber, it is not limited to this structure. The division room may be formed in any form as long as it can accommodate the frame holding mechanism and the workbench.

Also, in this embodiment, although it is formed as an opening and closing machine The structure is a cylinder structure, but it is not limited to this structure. The opening/closing mechanism may be configured to open and close a part of the division room and carry in and out the workpiece group into and out of the division room.

In addition, in this embodiment, although it is a structure which provided the cold air supply mechanism in the upper part of a division box, it is not limited to this structure. The cold air supply mechanism may be any configuration that can supply cold air to the division room and set the division room into a cold air atmosphere, and there is no particular limitation on the installation position of the division box or the cooling method in the division room.

In addition, although the embodiment of the present invention has been described, as another embodiment of the present invention, it is also possible to combine the above-mentioned embodiments and modifications in whole or in part.

In addition, the embodiment of the present invention is not limited to the above-mentioned embodiment and modification examples, and various changes, substitutions, and modifications can be made without departing from the scope of the technical idea of the present invention. In addition, if the technical idea of the present invention can be realized in other ways through technological progress or other derived technologies, this method can also be used to implement it. Therefore, the scope of patent application covers all embodiments that can be included in the scope of the technical idea of the present invention.

In addition, in this embodiment, although the present invention has been described with respect to the configuration applied to the dividing device, it may be another expansion device suitable for appropriately expanding the tape.

Industrial availability

As explained above, the present invention has the advantage of being able to divide the wafer well without reducing the cooling efficiency by using a simple device configuration. In addition, the effect of removing the slack of the tape is particularly useful in the dividing device and the dividing method for dividing the wafer that has been attached to the DAF tape.

10: Split box

13: Division room

14: Opening and closing mechanism

15: Air-conditioning supply mechanism

20: Workbench

24: On-off valve

26: Attraction source

30: Frame holding mechanism

40: shrink mechanism

42: Irradiation Department

55: modified layer (segmentation starting point)

56: DAF (bonded film)

C: chip

F: ring frame

T: DAF tape

W: Wafer

WS: Workpiece group

Claims (2)

A dividing device is to attach a wafer with a starting point of division on a tape, expand the tape of an integrated workpiece set, and divide the wafer with the starting point of division as the starting point, wherein the tape is a ring-shaped The opening of the frame is blocked for attachment. The dividing device is characterized by having: a frame holding mechanism for holding the ring frame; Tape to hold the wafer; the division chamber, which houses the frame holding mechanism and the workbench; the division box, which is composed of two boxes forming the division chamber; the opening and closing mechanism, which opens and closes a part of the division chamber to perform the division chamber The partition box is opened and closed for the loading and unloading of the workpiece group; the cold air supply mechanism supplies cold air to the partition room in which the partition box has been closed to set the partition room into a cold air atmosphere; the lifting mechanism uses the workbench in the partition room The frame holding mechanism is relatively close to and away from the frame holding mechanism in a direction orthogonal to the holding surface; and the shrink mechanism is directed toward the outer periphery of the wafer attached to the tape that has expanded in the dividing chamber and the ring frame The tape between the inner circumferences of the peripheries is irradiated with far-infrared rays to shrink it to fix the interval between adjacent wafers. In the partitioning chamber where the cold air atmosphere of the partitioning box is closed, the workbench and the frame holding mechanism Expand the tape away from each other to divide the wafer, and keep the holding surface holding the expanded tape to bring the table and the frame holding mechanism close, and the outer periphery of the wafer and the inner periphery of the ring frame The loosened tape in between is irradiated with far infrared rays to shrink it, and The distance between adjacent wafers is fixed. A method for dividing a wafer is a method for dividing a wafer using a dividing device as claimed in claim 1, and comprising: a holding step, carrying a workpiece group into the dividing chamber, and holding the workpiece group by the frame holding mechanism; A cooling step, supplying cold air to the dividing chamber to cool the workpiece group; a dividing step, after the cooling step, causing the worktable and the frame holding mechanism to move away from each other to expand the tape to divide the wafer; And shrinking step. After the dividing step, the tape is held on the holding surface in the dividing chamber, and the loosened tape between the outer periphery of the wafer and the inner periphery of the ring frame is irradiated with far infrared rays to make the tape shrink.

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