TWI718770B - Micro-electromechanical structure of probe card of image sensor chip - Google Patents
Micro-electromechanical structure of probe card of image sensor chip Download PDFInfo
- Publication number
- TWI718770B TWI718770B TW108142036A TW108142036A TWI718770B TW I718770 B TWI718770 B TW I718770B TW 108142036 A TW108142036 A TW 108142036A TW 108142036 A TW108142036 A TW 108142036A TW I718770 B TWI718770 B TW I718770B
- Authority
- TW
- Taiwan
- Prior art keywords
- probe
- positioning
- image sensor
- sensor chip
- micro
- Prior art date
Links
- 239000000523 sample Substances 0.000 title claims abstract description 151
- 125000006850 spacer group Chemical group 0.000 claims abstract description 23
- 239000004568 cement Substances 0.000 claims description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 27
- 238000000034 method Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 description 13
- 230000003014 reinforcing effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
一種影像感測晶片之探針卡的微機電結構,包括由上而下固定在一起的電路板、間隔固定板、及探針載片。多個探針呈水平式被固定於探針載片上。多個彈性頂針被限制在間隔固定板內,且每個彈性頂針上下兩端分別電性連接於電路板的電路接點及相對應的探針。探針一端具有向下的尖端且身部具有多個朝下的第一定位柱及第二定位柱,探針載片對應每個探針具有由多個定位孔所構成的定位組,第一定位柱與第二定位柱位於相對的定位孔內,探針尖端能與待測晶片接觸,藉此探針採用微機電製程加工而成,配合探針載片承載著,適用於後焦距離小於3mm之影像感測晶片的測試作業。 A micro-electromechanical structure of a probe card of an image sensing chip includes a circuit board fixed together from top to bottom, a spacer fixed plate, and a probe carrier. A plurality of probes are horizontally fixed on the probe slide. A plurality of elastic thimble pins are confined in the spaced fixing plate, and the upper and lower ends of each elastic thimble are respectively electrically connected to the circuit contacts of the circuit board and the corresponding probes. One end of the probe has a downward tip and the body has a plurality of downwardly facing first positioning pillars and second positioning pillars. The probe carrier has a positioning group composed of a plurality of positioning holes corresponding to each probe. The positioning pillar and the second positioning pillar are located in the opposite positioning holes, and the probe tip can contact the wafer to be tested. The probe is processed by the micro-electromechanical process and is carried by the probe carrier. It is suitable for the back focus distance less than Test operation of 3mm image sensor chip.
Description
本發明為一種影像感測晶片之探針卡的技術領域,尤其指一種利用微機電結構的探針,使之適用於後焦距小於3mm之影像感測晶片的測試。 The present invention relates to the technical field of a probe card for an image sensor chip, and in particular refers to a probe using a microelectromechanical structure to make it suitable for testing image sensor chips with a back focal length of less than 3 mm.
現今數位影像技術不斷創新、變化,特別是在數位相機與行動電話等的數位攝像載體皆朝小型化發展,內部攝像模組縱向尺寸可小於8mm。為達到此要求,光學系統的影像感測晶片不外乎採用感光耦合元件(Charge Coupled Device;CCD)或互補性氧化金屬半導體(Complementary Metal-Oxide Semiconductor Sensor;CMOS Sensor)兩種。搭配的光學鏡頭組則是採用多片式透鏡結構,例如4片、5片、甚至達7片,藉此縮短光學鏡頭組與影像感測晶片之間的後焦距,進一步降低尺寸。 Nowadays, digital imaging technology continues to innovate and change, especially in the development of miniaturization of digital camera carriers such as digital cameras and mobile phones, and the longitudinal size of the internal camera module can be less than 8mm. In order to meet this requirement, the image sensor chip of the optical system is nothing more than a Charge Coupled Device (CCD) or a Complementary Metal-Oxide Semiconductor Sensor (CMOS Sensor). The matched optical lens group uses a multi-element lens structure, such as 4 elements, 5 elements, or even up to 7 elements, thereby shortening the back focal length between the optical lens group and the image sensor chip, and further reducing the size.
『後焦距』指光學鏡頭組最後一個光學表面頂點至後方焦點的距離,日前技術後焦距可達3mm之下,相對地此類影像感測晶片的測試作業也必須於此距離內進行。目前用於此類探針卡的探針成型方式主要分為兩類:一、由薄膜沉積技術製成;二、採用微電機製程直接成型於基板上;但前述兩者所需的設備投資成本較高。為此本發明人設計了一種影像感測晶片之探針卡的微機電結構。 "Back focal length" refers to the distance from the vertex of the last optical surface of the optical lens group to the rear focal point. The back focal length of the technology can reach under 3mm in recent days. Relatively speaking, the test operation of this kind of image sensor chip must be carried out within this distance. The current probe molding methods used for this type of probe card are mainly divided into two categories: 1. It is made by thin film deposition technology; 2. It is directly formed on the substrate by micro-electromechanical process; but the equipment investment cost required for the above two Higher. For this reason, the inventor designed a micro-electromechanical structure of the probe card of the image sensor chip.
本發明之主要目的是提供一種影像感測晶片之探針卡的微機電結構,主要是在提供一種多層式堆疊組合結構,縮小探針頭的縱向尺寸,另外搭配由微機電製程所加工完成的微型探針,以水平方式固定探針,藉此在後焦距小的環境下,探針呈懸臂狀伸出的尖端仍保有彈性及強度,確保測試時維持良好的電性連接狀態。 The main purpose of the present invention is to provide a micro-electro-mechanical structure of the probe card of the image sensor chip, which is mainly to provide a multi-layer stacked combination structure to reduce the longitudinal size of the probe head, and in addition, it is equipped with the micro-electro-mechanical manufacturing process. The micro-probe is used to fix the probe in a horizontal manner, so that in an environment with a small back focus, the cantilevered tip of the probe still maintains elasticity and strength, ensuring that a good electrical connection is maintained during testing.
為達上述之目的,本發明係提供一種影像感測晶片之探針卡的微機電結構,包括由上而下固定在一起的電路板、間隔固定板、及探針載片。多個探針呈水平式被固定於探針載片上。多個彈性頂針被限制在間隔固定板內,且每個彈性頂針上下兩端分別電性連接著電路板的電路接點及相對應的探針;探針一端具有向下彎曲的尖端且身部具有多個朝下的第一定位柱及第二定位柱。探針載片具有多個定位組對應多個探針,每個定位組由多個定位孔所構成,每個探針的第一定位柱及第二定位柱位於相對應之定位組的多個定位孔內,使尖端能與欲測試晶片接觸。 To achieve the above objective, the present invention provides a micro-electromechanical structure of a probe card of an image sensor chip, which includes a circuit board fixed together from top to bottom, a spacer plate, and a probe carrier. A plurality of probes are horizontally fixed on the probe slide. Multiple elastic thimble pins are confined in the spaced fixed plate, and the upper and lower ends of each elastic thimble are electrically connected to the circuit contacts of the circuit board and the corresponding probe; one end of the probe has a downwardly bent tip and a body There are a plurality of downwardly facing first positioning pillars and second positioning pillars. The probe slide has multiple positioning groups corresponding to multiple probes, each positioning group is composed of multiple positioning holes, and the first positioning pillar and the second positioning pillar of each probe are located in the corresponding positioning groups. In the positioning hole, the tip can be in contact with the wafer to be tested.
在本發明的較佳實施例中,電路板具有至少一上層窗,上層窗周圍於電路板的下表面具有多個電路接點;間隔固定板具有至少一中層窗,間隔固定板於中層窗周圍分佈著多個限位孔;探針載片具有至少一下層窗,於該下層窗周圍於探針載片上表面設有至少一容置區;多個探針被固定在容置區內,彈性頂針位於相對應的限位孔內,且每個彈性頂針上下兩端頂制於電路接點與探針且構成電性連接。 In a preferred embodiment of the present invention, the circuit board has at least one upper window, and the lower surface of the circuit board around the upper window has a plurality of circuit contacts; the spacer fixing plate has at least one middle window, and the spacer fixing plate is around the middle window A plurality of limiting holes are distributed; the probe carrier has at least a lower layer window, and at least one accommodating area is provided on the upper surface of the probe carrier around the lower window; a plurality of probes are fixed in the accommodating area, elastic The thimble is located in the corresponding limit hole, and the upper and lower ends of each elastic thimble are pressed on the circuit contact and the probe to form an electrical connection.
在本發明的較佳實施例中,探針以黏固劑黏固於凹陷的容置區內,黏固劑的組成物包括樹脂或樹脂與陶瓷粉末的混合物。 In a preferred embodiment of the present invention, the probe is fixed in the recessed accommodating area with a cement, and the composition of the cement includes resin or a mixture of resin and ceramic powder.
在本發明的較佳實施例中,探針載片包括一上層片及一下層片堆疊黏固而成,上層片與下層片皆具有下層窗,下層片以下層窗為中心分佈著多組呈放射狀的定位組,每組定位組是由多個定位孔所構成,上層片於該下層窗周圍另連接著多個缺口,缺口在上層片與下層片結合後則形成容置區。 In a preferred embodiment of the present invention, the probe carrier sheet includes an upper layer sheet and a lower layer sheet which are stacked and glued. Radial positioning groups, each positioning group is composed of a plurality of positioning holes, the upper layer sheet is connected with a plurality of notches around the lower layer window, and the notches form a accommodating area after the upper layer sheet and the lower layer sheet are combined.
在本發明的較佳實施例中,每個定位組的多個定位孔並非在同一直線位置。 In a preferred embodiment of the present invention, the multiple positioning holes of each positioning group are not in the same linear position.
在本發明的較佳實施例中,其中探針為扁平狀,尖端呈彎曲狀且具有一肋連接著。 In a preferred embodiment of the present invention, the probe is flat, and the tip is curved and connected by a rib.
在本發明的較佳實施中,間隔固定板及探針載片是由氮化矽、碳化矽、氧化鋯、氧化鋁其中至少一種所構成。 In the preferred implementation of the present invention, the spacer and the probe carrier are made of at least one of silicon nitride, silicon carbide, zirconia, and aluminum oxide.
綜合以上所述,本發明影像感測晶片之探針卡的微機電結構,具有下列幾項具體的功能:1.本發明探針載片是利用高硬度薄片承載著小尺寸的探針,探針是由微機電製程所加工而成的小尺寸微型探針,探針尖端另具有肋增加強度,使探針一方面維持強度及彈性,一方面能縮小縱向尺寸,以在後焦距短的空間內進行測試作業;2.本發明探針載片上具有多組定位組,每組定位組由多個定位孔所構成,多個定位孔能讓探針更容易固定於探針載片上,免用治具的輔助,加快完成組裝作業;3.本發明利用多個定位孔來固定探針,進而引導探針彎曲,如此可增加相鄰兩探針末端之間的間距,且能調整探針末端的位置,此有助於設計及調整彈性 頂針與探針及電路板的接觸位置,在現今小尺寸的影像感測晶片且具有上百個接點必須電性接觸的要求下,此設計幫助甚多;4.探針載片可由隔熱材料所構成,在後焦距短的情形下,能阻絶影像感測晶片測試時的高溫熱傳遞,降低熱脹冷縮對樹脂所構成之黏固劑的影響,後續進行測試時,不會有因熱脹冷縮而產生晶圓探針刮痕(Wafer Probe Mark)時大時小的問題,且延長整體使用壽命。 In summary, the micro-electromechanical structure of the probe card of the image sensor chip of the present invention has the following specific functions: 1. The probe carrier of the present invention uses a high-hardness sheet to carry small-sized probes. The needle is a small-sized micro-probe processed by a micro-electromechanical process. The tip of the probe has ribs to increase the strength, so that the probe can maintain strength and flexibility on the one hand, and on the other hand, it can reduce the longitudinal size to achieve a short back focus space. 2. The probe slide of the present invention has multiple positioning groups, and each positioning group is composed of multiple positioning holes. The multiple positioning holes make it easier to fix the probe on the probe slide without using The aid of the jig speeds up the completion of the assembly work; 3. The present invention uses multiple positioning holes to fix the probe, and then guide the probe to bend, so that the distance between the ends of two adjacent probes can be increased, and the end of the probe can be adjusted Position, which helps design and adjust flexibility The contact position of the thimble with the probe and the circuit board is very helpful under the requirement of today's small-sized image sensor chip with hundreds of contacts that must be electrically contacted; 4. The probe carrier can be insulated The material is composed of, in the case of short back focus, it can block the high temperature heat transfer of the image sensor chip during testing, and reduce the impact of thermal expansion and contraction on the cement composed of resin. During subsequent testing, it will not There is a problem that the wafer probe mark (Wafer Probe Mark) is large and small due to thermal expansion and contraction, and the overall service life is prolonged.
以下配合圖式及元件符號對本發明之實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。 The following describes the implementation of the present invention in more detail with the drawings and component symbols, so that those who are familiar with the art can implement it after studying this specification.
1:電路板 1: circuit board
11:電路接點 11: Circuit contact
12:上層窗 12: Upper window
2:間隔固定板 2: Interval fixed plate
21:中層窗 21: Middle window
22:限位孔 22: Limit hole
23:補強區 23: Reinforcement area
3:探針載片 3: Probe slide
31:定位組 31: Positioning group
311:定位孔 311: positioning hole
32:下層窗 32: Lower window
33:容置區 33: containment area
34:上層片 34: upper layer piece
341:缺口 341: Gap
35:下層片 35: lower layer
4:懸臂式探針 4: Cantilever probe
41:尖端 41: Tip
42:第一定位柱 42: The first positioning column
43:第二定位柱 43: second positioning column
44:肋 44: rib
5:彈性頂針 5: Elastic thimble
6:黏固劑 6: Cement
7:測試機台 7: Test machine
71:燈源 71: light source
72:擴散件 72: diffuser
73:光學鏡頭組 73: Optical lens group
8:影像感測晶片 8: Image sensor chip
圖1為本發明之剖面示意圖;圖2為本發明運用於影像感測晶片時之結構剖面示意圖;圖3為本發明之局部放大的立體圖;圖4為本發明探針載片固定著探針的局部放大圖;圖5為本發明探針載片的局部放大分解示意圖;圖6為本發明探針載片的分解圖;圖7為本發明間隔固定板與探針載片組裝後的立體示意圖。 Figure 1 is a schematic cross-sectional view of the present invention; Figure 2 is a schematic cross-sectional view of the structure when the present invention is applied to an image sensor chip; Figure 3 is a partially enlarged perspective view of the present invention; Figure 4 is a probe carrier of the present invention with probes fixed Fig. 5 is a partial enlarged and exploded schematic view of the probe carrier of the present invention; Fig. 6 is an exploded view of the probe carrier of the present invention; Fig. 7 is a three-dimensional view of the spacer fixing plate and the probe carrier of the present invention after assembly Schematic.
如圖1及圖2所示,分別為本發明之剖面圖及運用於影像感測晶片時之結構剖面示意圖。本發明影像感測晶片之探針卡的微機電結構,主要是指
探針頭的結構,包括電路板1、間隔固定板2、探針載片3、多個探針4及多個彈性頂針5。電路板1、間隔固定板2、及探針載片3是由上而下堆疊固定在一起。多個探針4呈水平式局部被固定於探針載片3上。多個彈性頂針5被限制在間隔固定板2內,且每個彈性頂針5上下兩端分別電性連接於電路板1的電路接點11及位置相對應的探針4。探針4一端具有向下彎曲的尖端41且身部具有多個朝下的第一定位柱42及至少為一的第二定位柱43。探針載片3具有多個定位組31對應多個探針4,每個定位組31由多個定位孔311所構成,第一定位柱42及第二定位柱43位於相對應的多個定位孔311內,藉此固定著探針4的位置,以利尖端41能與欲測試晶片接觸。探針4前端呈懸臂狀伸出,能向上輕微彎曲,使之保持著彈性及維持接觸後的壓力。本發明是利用微機電製程所加工完成的探針4及降低探針載片3的縱向尺寸,使探針4能進入後焦距離小於3mm的作業環境,以對影像感測晶片進行測試作業。
As shown in FIG. 1 and FIG. 2, respectively, the cross-sectional view of the present invention and the schematic cross-sectional view of the structure when applied to the image sensor chip. The micro-electromechanical structure of the probe card of the image sensor chip of the present invention mainly refers to
The structure of the probe head includes a
接著就各構件的結構作一詳細的說明:電路板1負責與測試機台相結合,用以進行影像感測晶片的相關測試。該電路板1底面具有多個電路接點11,該電路接點11經彈性頂針5與相對應之探針4作電性連接。本發明由於是用於影像感測晶片的測試,電路板1具有至少一上層窗12,此上層窗12用以安裝光學鏡頭組,另外測試機台亦會提供燈源,模擬實際運作環境,用以測試影像感測晶片是否為良品,詳細運作方式於後段內容再作描述。一個上層窗12代表一個影像感測晶片的測試區,圖中僅畫出一個,實際上一個電路板1上具有許多個上層窗12。每個上層窗12周圍於電路板1的下表面皆具有數目及位置相對應的多個電路接點11。
Next, a detailed description of the structure of each component is given: the
請一併參閱圖3所示,間隔固定板2用以增加探針載片3的強度,設置其中的彈性頂針5是作為中間電性連接體(Interposer),可使電路板1的訊號經彈性頂針5讓探針4接收,且也可將訊號順利傳回至測試機台進行判讀。間隔固定板2具有至少一中層窗21,此中層窗21供光學鏡頭組通過。間隔固定板2於該中層窗21周圍分佈著多個限位孔22。每一個彈性頂針5位於相對應的限位孔22內。彈性頂針5可選用半導體業常用的POGO PIN,如彈簧針、彈簧銷、彈簧式探針等這類電連接器,利用垂直方向可被壓縮及恢復的彈性,使每個彈性頂針5上下兩端分別頂制於電路接點11與探針4且構成電性連接。
Please refer to FIG. 3 together. The
在本實施例中,間隔固定板2的厚度小於5mm,實際上僅3.5mm以下,因此必須具備高強度且熱膨脹係小的特性,可由氮化矽、碳化矽、氧化鋯、氧化鋁其中至少一種材料所構成。間隔固定板2可由單一板體加工而成,或為了加工方便,也可由多個薄板加工後再黏貼固定為單一結構體。間隔固定板2具有增加探針載片3強度的功能,在本實施例包括一補強區23,補強區23尺寸與形狀皆與探針載板3相近,補強區23在組裝時能延伸至光學鏡頭組下方。
In this embodiment, the thickness of the
請一併參閱圖5所示,在本實施例中,探針4是由微機電製程所加工完成的扁平金屬探針。探針4一端具有向下彎曲的尖端41且身部具有多個朝下的第一定位柱42及至少一個第二定位柱43。尖端41與探針4本體之間另具有肋44連接,此肋44是增加尖端41所在區域的強度。第一定位柱42的分佈位置是接近尖端41處,數量至少二個,在本實施例中是設有三個。第一定位柱42是為了固定時維持尖端41於正確位置。第二固定柱43至少設有一個,在本實施例設有多個且等間隔設置。圖5所示,探針4為薄片狀,可被變曲,利用多個第二定位柱43安裝於不在同一直線的定位孔311內,就能調整探針4末端的位置,增加相鄰
兩探針4末端之間的間距,以利彈性頂針5與探針4接觸的位置更容易設計及調整。
Please also refer to FIG. 5. In this embodiment, the
本發明採用探針載片3承載多個探針4,探針4縱向尺寸小於等於1mm,在本實施例是小於等於0.5mm,藉此在後焦距3mm以下的空間且光學鏡頭組尺寸大的條件下,本發明能克服探針4因懸空距離太長而強度不佳的問題,確保探針4的強度且能進行相關電性接觸及測試。請一併參閱圖4,探針載片3具有至少一下層窗32,此處供光線能投射至下方待測晶片,故下層窗32形狀及尺寸大於待測晶片。下層窗32周圍於該探針載片3上形成著凹陷狀的至少一容置區33,每個容置區33內設有多組定位組31(如圖5、圖6所示),每組定位組31內設有多個定位孔311。定位組31的數量與欲安裝的探針4數目相同。組裝時,探針4前端向下彎曲的尖端41經由下層窗32向下延伸,第一定位柱42及第二定位柱43位於相對應的定位孔311內,進而讓多個探針4固定於容置區33內。定位放置後的探針4局部由黏固劑6加以固定(如圖1~圖3所示),該黏固劑6可由樹脂或樹脂與陶瓷粉末的混合物所構成。固定後的探針4呈懸臂狀,其前端仍能向上輕微升起,保有彈性及維持接觸後的壓力。
The present invention adopts a
如圖5所示,在本實施例中,多個定位孔311是呈非直線狀排列。利用探針4的多個第一定位柱42位於相對應的定位孔311內,讓相鄰兩尖端41之間雖然很靠近但並不會接觸,且對應於影像感測晶片上相對應的接點。但探針4後段區段利用多個第二定位柱43依序偏移,進而讓相鄰兩探針4末端之間的間隔加大,方便後續彈性頂針5與之接觸。
As shown in FIG. 5, in this embodiment, the
在本實施例中,探針載片3的厚度小於1mm,實際上是小於等於0.5mm,因此也必須具備高強度且熱膨脹係小的特性,可由氮化矽、碳化矽、氧
化鋯、氧化鋁其中至少一種材料所構成。在本實施例中另外為了加工的方便,如圖4、6所示,探針載片3包括一上層片34及一下層片35堆疊黏固而成。上層片34及下層片35雖皆具有位置相對的下層窗32但形狀並不相同。上層片34於下層窗32周圍另連接著多個缺口341,缺口341在上層片34與下層片35結合後則構成容置區33。下層片35則於下層窗32周圍於分佈著多組呈放射狀的定位組31,每組定位組31由多個定位孔311所構成。
In this embodiment, the thickness of the
接著將本發明之組裝方式作一說明。先將加工後的上層片34與下層片35黏固成為探針載片3。多個探針4利用以第一定位柱42及第二定位柱43插入探針載片3相對應的定位孔311上,依序將多個探針4固定於探針載片3上,探針4的尖端41呈懸臂狀經下層窗32向下伸出,之後可用黏固劑6的原料如樹脂初步固定。之後將間隔固定板2堆疊於探針載片3,多個彈性頂針5放入相對應的限位孔22內,之後再將電路板1組裝於間隔固定板2上,利用螺栓貫穿在電路板1、間隔固定板2、探針載片3加以鎖固,確保彈性頂針5兩端分別與電路板1與探針4電性連接,即可完成整體的組裝。圖中雖僅畫出單一組測試結構,實際上由電路板1、間隔固定板2及探針載片3堆疊而成的結構,同時分佈著多個測試結構,能一次同時對多個影像感測晶片進行測試。另外電路板1、間隔固定板2、探針載片3尺寸大致相同,如此堆疊固定的結構強度較佳。
Next, the assembly method of the present invention will be explained. First, the processed
如圖7所示,為本發明實際運作的示意圖。本發明主要用於影像感測晶片的測試。電路板1是結合於測試機台7。測試機台7縱向包括燈源71、擴散件(Diffuser)72及光學鏡頭組73。晶圓位於最下方位置,晶圓表面具有多個影像感測晶片8(圖中僅畫出一個示意)。測試時由燈源71提供光線經擴散件(Diffuser)72、光學鏡頭組73投射至影像感測晶片8上。在本實施例中,該光學鏡
頭組73與影像感測晶片8之間的後焦距小於3mm。運用本發明之設計,探針載具3及補強區23的縱向尺寸小於2mm,甚至僅1.5mm,能承載探針4伸入光學鏡頭組73下方,進而與影像感測晶片8接觸進行相關的測試,滿足廠商的需求。
As shown in FIG. 7, it is a schematic diagram of the actual operation of the present invention. The present invention is mainly used for the test of the image sensor chip. The
以上所述者僅為用以解釋本發明之較佳實施例,並非企圖據以對本發明做任何形式上之限制,是以,凡有在相同之發明精神下所作有關本發明之任何修飾或變更,皆仍應包括在本發明意圖保護之範疇。 The above descriptions are only used to explain the preferred embodiments of the present invention, and are not intended to restrict the present invention in any form. Therefore, any modification or change related to the present invention is made under the same spirit of the invention. , Should still be included in the scope of the present invention's intention to protect.
1:電路板 1: circuit board
11:電路接點 11: Circuit contact
2:間隔固定板 2: Interval fixed plate
22:限位孔 22: Limit hole
3:探針載片 3: Probe slide
31:定位組 31: Positioning group
311:定位孔 311: positioning hole
33:容置區 33: containment area
34:上層片 34: upper layer piece
35:下層片 35: lower layer
4:懸臂式探針 4: Cantilever probe
41:尖端 41: Tip
42:第一定位柱 42: The first positioning column
43:第二定位柱 43: second positioning column
44:肋 44: rib
5:彈性頂針 5: Elastic thimble
6:黏固劑 6: Cement
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108142036A TWI718770B (en) | 2019-11-19 | 2019-11-19 | Micro-electromechanical structure of probe card of image sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108142036A TWI718770B (en) | 2019-11-19 | 2019-11-19 | Micro-electromechanical structure of probe card of image sensor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI718770B true TWI718770B (en) | 2021-02-11 |
| TW202120928A TW202120928A (en) | 2021-06-01 |
Family
ID=75746036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108142036A TWI718770B (en) | 2019-11-19 | 2019-11-19 | Micro-electromechanical structure of probe card of image sensor chip |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI718770B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070170943A1 (en) * | 2003-02-04 | 2007-07-26 | Microfabrica Inc. | Cantilever Microprobes For Contacting Electronic Components and Methods for Making Such Probes |
| TW201037315A (en) * | 2009-04-02 | 2010-10-16 | Pleader Yamaichi Co Ltd | Cantilever probe card for image sensing chip test |
| TW201932845A (en) * | 2018-01-17 | 2019-08-16 | 義大利商探針科技公司 | Cantilever contact probe and corresponding probe head |
-
2019
- 2019-11-19 TW TW108142036A patent/TWI718770B/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070170943A1 (en) * | 2003-02-04 | 2007-07-26 | Microfabrica Inc. | Cantilever Microprobes For Contacting Electronic Components and Methods for Making Such Probes |
| TW201037315A (en) * | 2009-04-02 | 2010-10-16 | Pleader Yamaichi Co Ltd | Cantilever probe card for image sensing chip test |
| TW201932845A (en) * | 2018-01-17 | 2019-08-16 | 義大利商探針科技公司 | Cantilever contact probe and corresponding probe head |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202120928A (en) | 2021-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101946182B (en) | Improved probe card for testing integrated circuits | |
| US7812627B2 (en) | Test device | |
| JP2008533441A (en) | High density interconnect system for IC packages and interconnect assemblies | |
| JPH0883825A (en) | Probe equipment | |
| JPH0883824A (en) | Probe equipment | |
| CN108344887A (en) | probe head structure of cantilever type probe card | |
| WO2023140617A1 (en) | Electro-conductive contact pin and inspection device having same | |
| WO2023167479A1 (en) | Electrically conductive contact pin, alignment plate, and inspection apparatus comprising same | |
| TWI787668B (en) | Probe card, probing system and probing method | |
| CN113495177B (en) | MEMS probe test head and probe card with 3D circuit | |
| TWI718770B (en) | Micro-electromechanical structure of probe card of image sensor chip | |
| JP4940269B2 (en) | Semiconductor wafer test apparatus, semiconductor wafer test method, and semiconductor wafer probe card | |
| TWI707145B (en) | Probe head structure for probe card of image sensing chip | |
| US6747467B2 (en) | Assembly apparatus and method of contactor | |
| CN1258212C (en) | Connector device for semiconductor device and test method for semiconductor device | |
| JP2007158345A (en) | Electrical inspection apparatus and inspection method for inspection of electrical components under test | |
| TW201140073A (en) | Probe card | |
| CN108459255B (en) | Test socket for fine-pitch packaging test | |
| TW200409264A (en) | Probe apparatus | |
| KR101954187B1 (en) | Method for producing microcontact pin assembly | |
| JP2000164655A (en) | Alignment device and alignment method | |
| TWI734354B (en) | Microelectromechanical probe head structure for image sensing chip | |
| TW202413953A (en) | Probe card device, probe systems, and inspection method for device under test | |
| CN113711341B (en) | Connection device for inspection | |
| CN115412660B (en) | Camera module, electronic equipment, testing device and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |