TWI712800B - Probe card and switch module - Google Patents
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- 239000000523 sample Substances 0.000 title claims abstract description 35
- 238000012360 testing method Methods 0.000 claims abstract description 47
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 230000003014 reinforcing effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 6
- 230000002787 reinforcement Effects 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 5
- 239000003351 stiffener Substances 0.000 abstract 2
- 238000009826 distribution Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
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Abstract
Description
本發明是關於一種探針卡及切換模組。The invention relates to a probe card and a switching module.
傳統的積體電路晶片的製造方法是先在晶圓上形成多個晶粒,然後將晶圓進行切割而形成多個獨立的晶粒,各個獨立的晶粒再分別予以封裝而成。晶粒本身依據功能的不同而可以有不同的尺寸,功能複雜的晶粒的尺寸通常比較大,晶粒上的接觸點的數量也較多,因此接觸點的間距通常甚窄。功能較簡單的晶粒上的接觸點雖然較少,但因為晶粒的尺寸也比較小,因此接觸點的間距也同樣甚窄。因此,一般的晶粒難以與電路板直接進行電性連接。The traditional method for manufacturing integrated circuit chips is to first form multiple dies on the wafer, then dicing the wafer to form multiple independent dies, and each independent die is packaged separately. The crystal grains themselves can have different sizes depending on their functions. The size of the crystal grains with complex functions is usually larger, and the number of contact points on the crystal grains is also large, so the distance between the contact points is usually very narrow. Although there are fewer contact points on the die with simpler functions, the size of the die is also relatively small, so the distance between the contact points is also very narrow. Therefore, it is difficult for the general die to directly electrically connect with the circuit board.
為了讓晶粒中的電路能夠和電路板進行電性連接,必須將晶粒上的接觸點的空間分布予以放大,此步驟稱之為空間轉換(space transform)。空間轉換通常是透過將晶粒焊接於積體電路載板上來實現。積體電路載板具有上表面與下表面,其上表面之上接觸點的空間分布與對應晶粒的接觸點的空間分布相同,下表面之下接觸點的分布則較為寬裕,上表面與下表面之間則存在一電路布局將上表面之上接觸點與下表面之下接觸點予以電性連接。如此一來,晶粒上的接觸點的空間分布便得以透過積體電路載板而放大。In order for the circuit in the die to be electrically connected to the circuit board, the spatial distribution of the contact points on the die must be enlarged. This step is called space transform. Space conversion is usually achieved by soldering the die to the integrated circuit carrier. The integrated circuit carrier board has an upper surface and a lower surface. The spatial distribution of the contact points on the upper surface is the same as the spatial distribution of the contact points of the corresponding die, and the distribution of the contact points under the lower surface is more generous. There is a circuit layout between the surfaces to electrically connect the contact points above the upper surface and the contact points below the lower surface. In this way, the spatial distribution of the contact points on the die can be enlarged through the integrated circuit carrier.
晶粒在與積體電路載板結合前,通常必須經過檢測程序,例如透過探針卡進行針測。為了能夠對晶圓上的晶粒進行探測,探針卡上的探針分布也必須與晶粒上之接觸點分布相同,因此探針同樣也會有緊湊的分布。如同前面所述,晶粒上之接觸點因為緊湊分布所以難以直接與電路板電性連接,同樣地,緊湊分布的探針也會有難以直接與測試電路板進行電性連接的問題,因此探針同樣也必須經過「空間轉換器」進行空間轉換始能與測試電路板電性連接。Before the die is combined with the integrated circuit carrier board, it usually has to go through a testing procedure, such as a probe test through a probe card. In order to be able to detect the die on the wafer, the distribution of the probes on the probe card must be the same as the distribution of the contact points on the die, so the probes will also have a compact distribution. As mentioned above, the contact points on the die are compactly distributed, so it is difficult to directly electrically connect to the circuit board. Similarly, the compactly distributed probes will also have the problem of being difficult to directly electrically connect to the test circuit board. The needle must also go through a "space converter" for space conversion before it can be electrically connected to the test circuit board.
空間轉換器係如同積體電路載板般具有上表面與下表面,其中與探針相連接的下表面具有與探針分布相同的緊湊的接觸點分布,朝向測試電路板的上表面則具有較寬裕的接觸點分布。The space converter has an upper surface and a lower surface like an integrated circuit carrier. The lower surface connected to the probe has the same compact contact point distribution as the probe, and the upper surface facing the test circuit board has a relatively small Ample distribution of contact points.
傳統的空間轉換器在與相對應的測試電路板進行電性連接時,是直接從微孔板拉線至測試電路板,導致線路走線交錯凌亂,容易造成訊號相互干擾的問題;此外,線路走線長短不一也會造成訊號的時序不一致,影響電性測試結果的準確度。When the traditional space converter is electrically connected with the corresponding test circuit board, it directly pulls the wire from the microporous board to the test circuit board, which causes the wiring to be staggered and messy, and it is easy to cause the problem of signal interference; in addition, the wiring Varying lengths of traces will also cause inconsistent signal timing, which will affect the accuracy of electrical test results.
有鑑於此,本發明提出一種探針卡,其包含測試電路板、補強件、切換模組以及測試頭。測試電路板包含上表面、下表面與中央穿孔。補強件設置於測試電路板之上表面,且包含對應於中央穿孔之中央載台。切換模組包含基座、微孔板、轉接板、複數線路以及複數外部電路走線。基座包含鏤空區,微孔板設置於基座之下方,轉接板設置於基座之上方。微孔板包含朝向基座之鏤空區的多個第一微孔。轉接板包含上表面、下表面與複數貫孔。轉接板之下表面朝向基座,上表面包含多個上接觸點,各貫孔自轉接板之上表面延伸至轉接板之下表面。線路個別地穿過微孔板之第一微孔與轉接板之貫孔,其電性連接微孔板至轉接板之上表面之上接觸點。外部電路走線個別地電性連接轉接板之上接觸點至測試電路板之上表面之上接觸點。測試頭則是電性連接於微孔板。In view of this, the present invention provides a probe card, which includes a test circuit board, a reinforcement, a switch module, and a test head. The test circuit board includes an upper surface, a lower surface and a central perforation. The reinforcement is arranged on the upper surface of the test circuit board and includes a central carrier corresponding to the central perforation. The switching module includes a base, a microplate, a transfer board, a plurality of circuits, and a plurality of external circuit wiring. The base includes a hollow area, the micro-well plate is arranged under the base, and the adapter plate is arranged above the base. The microwell plate includes a plurality of first microwells facing the hollow area of the base. The adapter plate includes an upper surface, a lower surface and a plurality of through holes. The lower surface of the adapter plate faces the base, the upper surface includes a plurality of upper contact points, and each through hole extends from the upper surface of the adapter plate to the lower surface of the adapter plate. The lines individually pass through the first micro-holes of the micro-hole plate and the through holes of the adapter plate, and electrically connect the micro-hole plate to the contact points on the upper surface of the adapter plate. The external circuit traces individually electrically connect the contact points on the transfer board to the contact points on the upper surface of the test circuit board. The test head is electrically connected to the microplate.
本發明也提出一種切換模組,適用於上述探針卡,係透過轉接板與相對應的測試電路板進行電性連接,因此線路不交錯,長短也趨於一致,解決先前技術之線路訊號相互干擾以及測試訊號時序不一致的問題。The present invention also provides a switching module suitable for the above-mentioned probe card, which is electrically connected to the corresponding test circuit board through the adapter board, so the lines are not staggered, and the lengths tend to be the same, which solves the line signal of the prior art Mutual interference and inconsistent timing of test signals.
請參照圖1與圖2,分別為本發明之例示切換模組的剖面分解示意圖與剖面示意圖,其繪示出一切換模組10。切換模組10包含基座11、微孔板12以及轉接板13。基座11的材質一般為不銹鋼,其中央包含有一鏤空區111。微孔板12的材質一般為陶瓷材料,其設置於基座11的下方。轉接板13本身可以是單層或多層電路板,其設置於基座11之上方。微孔板12包含朝向基座11之鏤空區111的多個第一微孔121。轉接板13包含上表面13U與下表面13B,下表面13B朝向基座11,上表面13U包含多個上接觸點131。Please refer to FIG. 1 and FIG. 2, which are respectively an exploded cross-sectional schematic diagram and a cross-sectional schematic diagram of an exemplary switching module of the present invention, which illustrate a
在部分實施例中,轉接板13本身並非直接設置在基座11上而是透過鋼柱139墊高,藉此使線路18與轉接板13之間的夾角變小,以減少線路18的彎折角度,來增加線路18與轉接板13之間電性連接的可靠度與壽命。在部分實施例中,轉接板13包含一中央區域13C與包圍中央區域13C之一外圍區域13E,且上接觸點131係位於外圍區域13E。在部分實施例中,外圍區域13E係定義為轉接板13沿著其法線方向上的投影不會與基座11之鏤空區111重疊的區域。在部分實施例中,轉接板13係為圓形且具有一半徑,中央區域13C係定義為圓心至半徑*0.7以內的圓形區域,外圍區域13E係定義為該圓形區域以外的環形區域。在部分實施例中,中央區域13C沿著轉接板13之表面的法線方向的投影恰好與鏤空區111重疊。需特別說明的是,將上接觸點131設置於轉接板13的外圍區域13E,也就是設置地較靠近轉接板13的周緣,將有助於上接觸點131與下述測試電路板之間的電性連接。In some embodiments, the
如圖3所示,在部分實施例中,切換模組10更包含一定位薄膜19,定位薄膜19的作用是用來導引穿過微孔板12的線路18,使其排列整齊,方便作業人員判斷每一根線路18的順序。定位薄膜19可以是由高分子材料所製成且具有可撓性。定位薄膜19設置於微孔板12與轉接板13之間,且位於微孔板12之第一微孔121的上方。在部分實施例中,轉接板13更包含位於其上表面13U與下表面13B之間的內層電路布局13L,此內層電路布局13L的作用是讓線路18得以經由內層電路布局13L電性連接至上表面13U的多個上接觸點131。定位薄膜19包含個別地對應於第一微孔121之第二微孔191,且第二微孔191彼此間的間距等於第一微孔121彼此間的間距,亦即定位薄膜19與微孔板12之間的線路18尚未進行扇出(fan-out)布局,而是在定位薄膜19與轉接板13之下表面13B之間始進行扇出布局。As shown in FIG. 3, in some embodiments, the
承上,本實施例之線路18穿過定位薄膜19之後,線路18彼此間的間距才會隨著逐漸接近轉接板13而逐漸擴大,直到抵達轉接板13之下表面13B為止。然後,線路18會進一步穿過轉接板13之各個貫孔132而焊接於轉接板13之上表面13U,其中各個貫孔132之間的間距是固定的。換言之,若定義微孔板12之相鄰二第一微孔121之間的間距為P1,定位薄膜19之相鄰二第二微孔191之間的間距為P2,轉接板13之相鄰二貫孔132之間的間距為P3,則P1=P2>P3,且線路18彼此間的距離會從定位薄膜19處隨著逐漸靠近轉接板13而逐漸趨近於P3。In conclusion, after the
在安裝線路18時,定位薄膜19係先設置在微孔板12上,且讓第二微孔191與第一微孔121彼此一對一對齊。然後,讓各線路18由上而下依序穿過第二微孔191與第一微孔121。此時,各條線路18位於定位薄膜19與微孔板12之間的區段呈現垂直狀態,即各條線路18呈直線沒有彎折狀態,使各線路18之間保持一定間距不交錯互相干涉,進而消除因線路交錯而引起的電性異常問題。此外,透過定位薄膜19可對線路18進行規整,此時作業人員便可方便地進行後續的電性連接作業。在線路規整完畢之後,定位薄膜19與微孔板12之間還可以進一步以膠材(例如環氧樹脂)填滿,使膠材填滿定位薄膜19與微孔板12之間的空隙。如此一來,定位薄膜19與微孔板12之間的距離便就此固定,同時線路18位在定位薄膜19與微孔板12之間的部分彼此之間也會被膠材隔開,更加確保線路18位在定位薄膜19與微孔板12之間的部分不會發生交錯。When the
如圖4所示,在部分實施例中,轉接板23包含彼此個別地相互電性連接之多個第一上接觸點231C與多個第二上接觸點231E。第一上接觸點231C位於中央區域23C,第二上接觸點231E位於外圍區域23E。在部分實施例中,轉接板23更包含中介電路走線27,中介電路走線27的作用是將第一上接觸點231C個別地電性連接至第二上接觸點231E。同樣地,定位薄膜19與微孔板12之間的線路18也是如圖4所示般沒有進行扇出(fan-out)布局的態樣,而是在定位薄膜19與轉接板13之下表面13B之間始進行扇出布局。As shown in FIG. 4, in some embodiments, the
在部分實施例中,如圖1與2所示,轉接板13之下表面13B與微孔板12之上表面的距離L大於4 mm。這是因為測試電路板的厚度通常會大於4 mm,為了讓切換模組10與測試電路板組裝時,轉接板13的上表面13U能夠凸出測試電路板的上表面,微孔板12能夠凸出測試電路板的下表面。此外,在部分實施例中,線路18與轉接板13之下表面13B接觸的位置的集合會構成一個具有半徑R的圓形焊接區域或者長寬各為2R的矩形區域,轉接板13之下表面13B與微孔板12之上表面的距離定義為L,其中R/L係在0.1至7.5的範圍間。在部分實施例中,轉接板13之下表面13B與微孔板12之上表面的距離L係在4 mm至40 mm的範圍間,圓形焊接區域的半徑R是在4 mm至30 mm之範圍間。In some embodiments, as shown in FIGS. 1 and 2, the distance L between the
請參照圖5至圖8,分別為本發明之例示探針卡的剖面分解示意圖、剖面示意圖、電性連接示意圖以及俯視示意圖,其繪示出一探針卡30。探針卡30包含有測試電路板31、補強件32、切換模組20以及測試頭35。測試電路板31包含上表面31U、下表面31B與中央穿孔311。上表面31U的定義為測試裝置側(tester side),也就是和測試裝置連接的表面,下表面31B的定義為晶圓側(wafer side),也就是朝向待測晶圓的表面。補強件32可以是鋁製或者鋁合金製的框體,其設置於測試電路板31之上表面31U,以補強測試電路板31的剛性。補強件32的中央設置有對應於測試電路板31之中央穿孔311之一中央載台321,且中央載台321係透過四根橋接件329和補強件32的本體相連。在部分實施例中,基於測試電路板31的型號不同,中央載台321也可以僅透過二根橋接件329和補強件32的本體相連,甚或透過其他造型的橋接件來和補強件32的本體相連。Please refer to FIGS. 5 to 8, which are respectively an exploded cross-sectional schematic diagram, a cross-sectional schematic diagram, a schematic diagram of electrical connections, and a schematic top view of an exemplary probe card of the present invention, which illustrate a
組裝時,切換模組20係自補強件32的上表面32U插入中央載台321中,且切換模組20之微孔板12會凸出補強件32之下表面32B以及凸出測試電路板31之下表面31B,並和測試頭35電性連接。在部分實施例中,中央載台321之內表面形成有凸緣323,如圖5所示。當切換模組20容置於中央載台321中時,凸緣323抵接基座11之外周緣119,限制切換模組20無法沿著垂直方向由上而下整個穿過補強件32。When assembling, the
在部分實施例中,轉接板23的外徑可以盡可能的大,例如可以大於測試電路板31之中央穿孔311的孔徑。In some embodiments, the outer diameter of the
在部分實施例中,上述線路18的材質與中介電路走線27及外部電路走線37的材質不同。由於線路18的線徑不大於50微米,例如35微米,因此一般的金屬線容易斷裂。線路18的材質可以選擇在此線徑要求下不會斷裂的金屬材料,例如銅、鎢合金或銅銀合金,又或者是上述合金進一步摻有錸、鈀或鈹。正因線路18的線徑相當小,且排列緊湊,藉由設置定位薄膜19,可協助對線路18進行規整與梳理,方便工作人員作業。在部分實施例中,線路18之中最長的線路與最短的線路的長度比小於1.1,也就是說多個線路18的長度實質上盡可能保持一致,縱使有差異,最長的線路長度不能夠比最短的線路長超過10%。此外,微孔板12與轉接板13之間的空間可以進一步注入密封膠(例如環氧樹脂),將線路18進行密封,以保護線路18,提升切換模組10整體的耐候性。In some embodiments, the material of the
需特別說明的是,為方便說明切換模組與探針卡的結構,本申請案所附的圖式中,各個元件並非完全按實際比例繪製。It should be particularly noted that, in order to facilitate the description of the structure of the switch module and the probe card, in the drawings attached to this application, the various components are not drawn in full scale.
雖然本發明已以實施例揭露如上然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之專利申請範圍所界定者為準。Although the present invention has been disclosed by the embodiments as above, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be subject to the scope of the attached patent application.
10:切換模組
11:基座
111:鏤空區
119:外周緣
12:微孔板
121:第一微孔
13:轉接板
131:上接觸點
132:貫孔
139:鋼柱
13U:上表面
13B:下表面
13E:外圍區域
13C:中央區域
13L:內層電路布局
18:線路
19:定位薄膜
191:第二微孔
20:切換模組
23:轉接板
23E:外圍區域
23C:中央區域
231C:第一上接觸點
231E:第二上接觸點
27:中介電路走線
30:探針卡
31:測試電路板
31U:上表面
31B:下表面
311:中央穿孔
32:補強件
32U:上表面
32B:下表面
321:中央載台
323:凸緣
329:橋接件
35:測試頭
37:外部電路走線10: Switch module
11: Pedestal
111: hollow area
119: Outer periphery
12: Microplate
121: The first micro hole
13: adapter board
131: upper contact point
132: Through hole
139:
[圖1] 為本發明之例示切換模組的剖面分解示意圖; [圖2] 為本發明之例示切換模組的剖面示意圖; [圖3] 為本發明之具有定位薄膜與內層電路布局之切換模組的剖面示意圖; [圖4] 為本發明之具有定位薄膜與外部電路走線之切換模組的剖面示意圖; [圖5] 為本發明之例示探針卡的剖面分解示意圖; [圖6] 為本發明之例示探針卡的剖面示意圖; [圖7] 為本發明之例示探針卡的電性連接示意圖;以及 [圖8] 為本發明之例示探針卡的俯視示意圖。 [Figure 1] is a schematic cross-sectional exploded view of an exemplary switching module of the present invention; [Figure 2] is a schematic cross-sectional view of an exemplary switching module of the present invention; [Figure 3] is a schematic cross-sectional view of the switching module with positioning film and internal circuit layout of the present invention; [Figure 4] is a schematic cross-sectional view of the switching module with positioning film and external circuit wiring of the present invention; [Figure 5] is a schematic cross-sectional exploded view of an exemplary probe card of the present invention; [Figure 6] is a schematic cross-sectional view of an exemplary probe card of the present invention; [Figure 7] is a schematic diagram of the electrical connection of an exemplary probe card of the present invention; and [Figure 8] is a schematic top view of an exemplary probe card of the present invention.
10:切換模組 10: Switch module
11:基座 11: Pedestal
111:鏤空區 111: hollow area
119:周緣 119: Perimeter
12:微孔板 12: Microplate
121:第一微孔 121: The first micro hole
13:轉接板 13: adapter board
131:上接觸點 131: upper contact point
132:貫孔 132: Through hole
139:鋼柱 139: Steel Column
13U:上表面 13U: upper surface
13B:下表面 13B: Lower surface
13E:外圍區域 13E: Peripheral area
13C:中央區域 13C: Central area
13L:內層電路布局 13L: inner circuit layout
Claims (17)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010235672.6A CN112017981B (en) | 2019-05-31 | 2020-03-30 | Probe Card and Switching Module |
| EP20169599.6A EP3745142B1 (en) | 2019-05-31 | 2020-04-15 | Probe card and switch module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108119092 | 2019-05-31 | ||
| TW108119092 | 2019-05-31 |
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|---|---|
| TWI712800B true TWI712800B (en) | 2020-12-11 |
| TW202045930A TW202045930A (en) | 2020-12-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW108144391A TWI712800B (en) | 2019-05-31 | 2019-12-04 | Probe card and switch module |
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| TW (1) | TWI712800B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI747693B (en) * | 2020-12-31 | 2021-11-21 | 致茂電子股份有限公司 | Connector device of semiconductor test equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102520860B1 (en) * | 2022-11-08 | 2023-04-12 | 주식회사 유니밴스 | Thermal Deformation Improvement Stiffner Probe Card |
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| TW202045930A (en) | 2020-12-16 |
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