TWI709218B - Chip package structure and manufacturing method thereof - Google Patents
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- TWI709218B TWI709218B TW108148259A TW108148259A TWI709218B TW I709218 B TWI709218 B TW I709218B TW 108148259 A TW108148259 A TW 108148259A TW 108148259 A TW108148259 A TW 108148259A TW I709218 B TWI709218 B TW I709218B
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 150000001875 compounds Chemical class 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 96
- 238000004806 packaging method and process Methods 0.000 claims description 49
- 239000008393 encapsulating agent Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 29
- 239000012790 adhesive layer Substances 0.000 claims description 19
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000000084 colloidal system Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 abstract 5
- 230000017525 heat dissipation Effects 0.000 description 14
- 239000003292 glue Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 3
- 238000013021 overheating Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Abstract
Description
本發明是有關於一種封裝結構及其製作方法,且特別是有關於一種晶片封裝結構及其製作方法。The invention relates to a packaging structure and a manufacturing method thereof, and more particularly to a chip packaging structure and a manufacturing method thereof.
利用扇出式多頻帶天線晶圓級封裝的設計,可以讓電子線路微縮化,並大幅降低電性的插入損耗。在未來電子產品在傳輸頻率與操作速度越來越快下,伴隨而來的晶片散熱問題也越來越重要。然而,在前述的扇出式多頻帶天線晶圓級封裝的製作中,晶片的主動表面是朝上(face-up)以背面接合至作為天線接地圖案的第一重配置線路層,而後再於晶片的主動表面上製作與銲球電性連接的第二重配置線路層。因此,在上述的製作方法中無法加入散熱塊或散熱鰭片來對晶片進行散熱,因而無法解決扇出式多頻帶天線晶圓級封裝的散熱問題。The use of fan-out multi-band antenna wafer-level packaging design can miniaturize electronic circuits and greatly reduce electrical insertion loss. In the future, as the transmission frequency and operation speed of electronic products become faster and faster, the accompanying heat dissipation problem of the chip becomes more and more important. However, in the fabrication of the aforementioned fan-out multi-band antenna wafer-level package, the active surface of the chip is face-up and back bonded to the first reconfiguration circuit layer as the antenna ground pattern, and then the A second reconfiguration circuit layer electrically connected with the solder balls is formed on the active surface of the chip. Therefore, it is impossible to add heat sinks or heat sink fins to dissipate heat from the chip in the above-mentioned manufacturing method, and thus cannot solve the heat dissipation problem of fan-out multi-band antenna wafer-level packaging.
本發明提供一種晶片封裝結構,其可具有較佳的散熱效果。The present invention provides a chip packaging structure, which can have better heat dissipation effects.
本發明提供一種晶片封裝結構的製作方法,用以製作上述的晶片封裝結構。The present invention provides a manufacturing method of a chip package structure for manufacturing the above-mentioned chip package structure.
本發明的晶片封裝結構,其包括至少一晶片、至少一導熱元件、一封裝膠體以及一重配置線路層。每一晶片具有彼此相對的一主動表面與一背面以及設置於主動表面上的多個電極。導熱元件設置於每一晶片的背面上。封裝膠體包覆晶片與導熱元件,且具有彼此相對的一上表面與一下表面。每一晶片的每一電極的一底表面切齊於封裝膠體的下表面。封裝膠體暴露出每一導熱元件的一頂表面。重配置線路層配置於封裝膠體的下表面上,且電性連接每一晶片的電極。The chip packaging structure of the present invention includes at least one chip, at least one heat-conducting element, a packaging compound, and a reconfiguration circuit layer. Each chip has an active surface and a back surface opposite to each other, and a plurality of electrodes arranged on the active surface. The heat conducting element is arranged on the back of each chip. The packaging glue covers the chip and the heat-conducting element, and has an upper surface and a lower surface opposite to each other. A bottom surface of each electrode of each chip is cut in line with the bottom surface of the packaging compound. The encapsulant exposes a top surface of each thermal element. The reconfiguration circuit layer is disposed on the lower surface of the packaging glue and electrically connected to the electrodes of each chip.
在本發明的一實施例中,上述的晶片封裝結構還包括至少一導電通孔、至少一第一接墊以及至少一第二接墊。導電通孔貫穿封裝膠體且連接上表面與下表面。第一接墊配置於封裝膠體的上表面上,且電性連接每一導電通孔的一第一端。第二接墊配置於封裝膠體的下表面上,且電性連接每一導電通孔的一第二端,其中重配置線路層電性連接第二接墊。In an embodiment of the present invention, the aforementioned chip package structure further includes at least one conductive via, at least one first pad, and at least one second pad. The conductive through hole penetrates the packaging compound and connects the upper surface and the lower surface. The first pad is disposed on the upper surface of the packaging compound and is electrically connected to a first end of each conductive via. The second pad is configured on the lower surface of the packaging compound and is electrically connected to a second end of each conductive via, wherein the reconfiguration circuit layer is electrically connected to the second pad.
在本發明的一實施例中,上述的晶片封裝結構更包括一天線結構層,配置於封裝膠體的上表面上,且包括一介電層以及多個天線圖案。介電層具有暴露出導熱元件的至少一開口,且介電層覆蓋封裝膠體的上表面與第一接墊。天線圖案內埋於介電層且切齊於介電層相對遠離封裝膠體的一表面。天線圖案與第一接墊電性連接。In an embodiment of the present invention, the above-mentioned chip package structure further includes an antenna structure layer, which is disposed on the upper surface of the packaging compound, and includes a dielectric layer and a plurality of antenna patterns. The dielectric layer has at least one opening exposing the heat-conducting element, and the dielectric layer covers the upper surface of the packaging compound and the first pad. The antenna pattern is buried in the dielectric layer and is aligned with a surface of the dielectric layer that is relatively far away from the packaging compound. The antenna pattern is electrically connected to the first pad.
在本發明的一實施例中,上述的至少一晶片為至少一射頻晶片。In an embodiment of the present invention, the aforementioned at least one chip is at least one radio frequency chip.
在本發明的一實施例中,上述的至少一晶片包括一第一晶片與一第二晶片,且天線圖案對應第一晶片設置。In an embodiment of the present invention, the aforementioned at least one chip includes a first chip and a second chip, and the antenna pattern is arranged corresponding to the first chip.
在本發明的一實施例中,上述的第一晶片為一射頻晶片,而第二晶片為一基頻晶片。In an embodiment of the present invention, the aforementioned first chip is a radio frequency chip, and the second chip is a baseband chip.
在本發明的一實施例中,上述的至少一晶片為至少一基頻晶片。In an embodiment of the present invention, the aforementioned at least one chip is at least one baseband chip.
在本發明的一實施例中,上述的晶片封裝結構更包括多個銲球,配置於重佈線路層的多個扇出接墊上,且與重佈線路層電性連接。In an embodiment of the present invention, the above-mentioned chip package structure further includes a plurality of solder balls, which are arranged on the plurality of fan-out pads of the redistributed circuit layer and are electrically connected to the redistributed circuit layer.
在本發明的一實施例中,上述的每一導熱元件於每一晶片的背面上的正投影面積小於背面的面積。In an embodiment of the present invention, the orthographic projection area of each of the above-mentioned heat-conducting elements on the back surface of each chip is smaller than the area of the back surface.
在本發明的一實施例中,上述的晶片封裝結構更包括至少一熱界面材料,配置於導熱元件與晶片之間。導熱元件透過熱界面材料而固定於晶片上。In an embodiment of the present invention, the aforementioned chip package structure further includes at least one thermal interface material disposed between the thermally conductive element and the chip. The thermally conductive element is fixed on the chip through the thermal interface material.
本發明的晶片封裝結構的製作方法,其包括以下步驟。提供已形成有一黏著層的一載板。提供至少一晶片及至少一導熱元件。每一晶片具有彼此相對的一主動表面與一背面以及設置於主動表面上的多個電極。每一導熱元件設置於每一晶片的背面上。接合晶片於載板上,其中每一晶片的電極直接接觸黏著層。形成一封裝膠體於載板上,以覆蓋黏著層且包覆晶片與導熱元件。移除部分封裝膠體,以使封裝膠體暴露出每一導熱元件的一頂表面。移除載板與黏著層,而暴露出每一晶片的電極與封裝膠體的一下表面。每一晶片的每一電極的一底表面切齊於封裝膠體的下表面。形成一重配置線路層於封裝膠體的下表面上。重配置線路層電性連接每一晶片的電極。The manufacturing method of the chip package structure of the present invention includes the following steps. Provide a carrier with an adhesive layer formed. At least one chip and at least one heat conducting element are provided. Each chip has an active surface and a back surface opposite to each other, and a plurality of electrodes arranged on the active surface. Each heat conducting element is arranged on the back of each chip. The chips are bonded on the carrier, and the electrodes of each chip directly contact the adhesive layer. A encapsulant is formed on the carrier to cover the adhesive layer and cover the chip and the heat-conducting element. Remove part of the encapsulant so that the encapsulant exposes a top surface of each thermal element. The carrier board and the adhesive layer are removed, and the electrodes of each chip and the lower surface of the packaging glue are exposed. A bottom surface of each electrode of each chip is cut in line with the bottom surface of the packaging compound. A reconfiguration circuit layer is formed on the lower surface of the encapsulant. The reconfiguration circuit layer is electrically connected to the electrodes of each chip.
在本發明的一實施例中,上述於移除載板與黏著層之後,且於形成重配置線路層之前,更包括以下步驟。形成至少一導電通孔以貫穿封裝膠體且連接封裝膠體相對於下表面的一上表面與下表面。形成至少一第一接墊於封裝膠體的上表面上,其中第一接墊電性連接每一導電通孔的一第一端。形成至少一第二接墊於封裝膠體的下表面上,其中第二接墊電性連接每一導電通孔的一第二端。In an embodiment of the present invention, after the carrier board and the adhesive layer are removed, and before the reconfiguration circuit layer is formed, the following steps are further included. At least one conductive through hole is formed to penetrate through the packaging glue and connect an upper surface and a lower surface of the packaging glue with respect to the lower surface. At least one first pad is formed on the upper surface of the packaging compound, wherein the first pad is electrically connected to a first end of each conductive via. At least one second pad is formed on the lower surface of the encapsulant, wherein the second pad is electrically connected to a second end of each conductive via.
在本發明的一實施例中,上述於形成重配置線路層之前,更包括形成一天線結構層於封裝膠體的上表面上。天線結構層包括一介電層以及多個天線圖案。介電層具有暴露出導熱元件的至少一開口,且介電層覆蓋封裝膠體的上表面與第一接墊。天線圖案內埋於介電層且切齊於介電層相對遠離封裝膠體的一表面。天線圖案與第一接墊電性連接。In an embodiment of the present invention, before forming the reconfiguration circuit layer, it further includes forming an antenna structure layer on the upper surface of the packaging compound. The antenna structure layer includes a dielectric layer and a plurality of antenna patterns. The dielectric layer has at least one opening exposing the heat-conducting element, and the dielectric layer covers the upper surface of the packaging compound and the first pad. The antenna pattern is buried in the dielectric layer and is aligned with a surface of the dielectric layer that is relatively far away from the packaging compound. The antenna pattern is electrically connected to the first pad.
在本發明的一實施例中,上述的至少一晶片為至少一射頻(radio frequency, RF)晶片。In an embodiment of the present invention, the aforementioned at least one chip is at least one radio frequency (RF) chip.
在本發明的一實施例中,上述的至少一晶片包括一第一晶片與一第二晶片。天線圖案對應第一晶片設置。In an embodiment of the present invention, the aforementioned at least one chip includes a first chip and a second chip. The antenna pattern is arranged corresponding to the first chip.
在本發明的一實施例中,上述的第一晶片為一射頻晶片,而第二晶片為一基頻晶片(baseband chip)。In an embodiment of the present invention, the above-mentioned first chip is a radio frequency chip, and the second chip is a baseband chip.
在本發明的一實施例中,上述的至少一晶片為至少一基頻晶片。In an embodiment of the present invention, the aforementioned at least one chip is at least one baseband chip.
在本發明的一實施例中,上述於形成重配置線路層之後,更包括:形成多個銲球於重佈線路層的多個扇出接墊上,其中銲球與重佈線路層電性連接。In an embodiment of the present invention, after forming the reconfiguration circuit layer, it further includes: forming a plurality of solder balls on the plurality of fan-out pads of the reconfiguration circuit layer, wherein the solder balls are electrically connected to the reconfiguration circuit layer .
在本發明的一實施例中,上述的每一導熱元件於每一晶片的背面上的正投影面積小於背面的面積。In an embodiment of the present invention, the orthographic projection area of each of the above-mentioned heat-conducting elements on the back surface of each chip is smaller than the area of the back surface.
在本發明的一實施例中,上述的晶片封裝結構的製作方法,還包括提供至少一熱界面材料於導熱元件與晶片之間,其中導熱元件透過熱界面材料而固定於晶片上。In an embodiment of the present invention, the manufacturing method of the above-mentioned chip package structure further includes providing at least one thermal interface material between the thermally conductive element and the chip, wherein the thermally conductive element is fixed on the chip through the thermal interface material.
基於上述,在本發明的晶片封裝結構的設計中,晶片的背面配置有導熱元件,且封裝膠體暴露出導熱元件的頂表面。藉此,晶片所產生的熱可透過導熱元件快速地傳遞至在外界,因而使得本發明的晶片封裝結構可具有較佳地散熱效果。此外,重配置線路層配置於封裝膠體的下表面上且電性連接晶片的電極,使得本發明的晶片封裝結構可具有較佳的電性表現。簡言之,本發明的晶片封裝結構可同時兼顧電性與散熱的表現,可使晶片的功能維持正常不過熱,進而有效地延長晶片封裝結構的使用壽命。Based on the above, in the design of the chip package structure of the present invention, a thermally conductive element is arranged on the back of the chip, and the top surface of the thermally conductive element is exposed by the packaging glue. Thereby, the heat generated by the chip can be quickly transferred to the outside through the heat-conducting element, so that the chip package structure of the present invention can have a better heat dissipation effect. In addition, the reconfiguration circuit layer is disposed on the lower surface of the packaging compound and electrically connected to the electrodes of the chip, so that the chip packaging structure of the present invention can have better electrical performance. In short, the chip package structure of the present invention can take into account both electrical and heat dissipation performance, and can maintain the function of the chip without overheating, thereby effectively extending the service life of the chip package structure.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
圖1A至圖1J繪示為本發明的一實施例的一種晶片封裝結構的製作方法的剖面示意圖。圖2繪示為圖1J的晶片封裝結構的俯視示意圖。關於本實施例的晶片封裝結構的製作方法,首先,請參考圖1A,提供已形成有一黏著層12的一載板10。此處,黏著層12例如是雙面熱解黏膠帶(thermal release tape),但不以此為限。1A to 1J are schematic cross-sectional diagrams of a manufacturing method of a chip package structure according to an embodiment of the present invention. FIG. 2 is a schematic top view of the chip package structure of FIG. 1J. Regarding the manufacturing method of the chip package structure of this embodiment, first, referring to FIG. 1A, a
接著,請參考圖1B,提供至少一晶片(示意地繪示一個晶片110)及至少一導熱元件(示意地繪示一個導熱元件120)。每一晶片110具有彼此相對的一主動表面111與一背面113以及設置於主動表面111上的多個電極112。每一導熱元件120設置於每一晶片110的背面113上。更進一步來說,可提供至少一熱界面材料(Thermal Interface Material, TIM)(示意地繪示一個熱界面材料125)於導熱元件120與晶片110之間,其中導熱元件120可透過熱界面材料125而固定於晶片110上。如圖1B所示,導熱元件120於晶片110的背面113上的正投影面積小於背面113的面積。此處,晶片110具體化為一射頻(radio frequency, RF)晶片,而導熱元件120例如是散熱器(Heat Spreader),但不以此為限。Next, referring to FIG. 1B, at least one chip (schematically shows a chip 110) and at least one heat-conducting element (schematically shows a heat-conducting element 120) is provided. Each
接著,請參考圖1C,接合晶片110於載板10上,其中每一晶片110的電極112直接接觸黏著層12。此處,晶片110及其上的導熱元件120是以主動表面111朝下(face-down)的方式接合於載板10的黏著層12上。Next, referring to FIG. 1C, the
接著,請參考圖1D,形成一封裝膠體130a於載板10上,以覆蓋黏著層12且包覆晶片110與導熱元件120。此時,封裝膠體130a完全包覆該晶片110與導熱元件120,意即導熱元件120的一頂表面122亦被封裝膠體130所覆蓋。Next, referring to FIG. 1D, an
接著,請同時參考圖1D與圖1E,透過例如是研磨的方式,來移除部分封裝膠體130a,以使封裝膠體130暴露出導熱元件120的頂表面122。此處,導熱元件120的頂表面122實質上切齊於封裝膠體130的一上表面132。Next, referring to FIG. 1D and FIG. 1E at the same time, a part of the encapsulant 130 a is removed by, for example, grinding, so that the
接著,請同時參考圖1E與圖1F,移除載板10與黏著層12,而暴露出晶片110的電極112與封裝膠體130相對於上表面132的一下表面134。此處,晶片110的每一電極112的一底表面115實質上切齊於封裝膠體130的下表面134。Next, referring to FIG. 1E and FIG. 1F at the same time, the
接著,請同時參考圖1G與圖1H,透過例如是雷射鑽孔的方式形成通孔於封裝膠體130內,且透過電鍍填孔的方式,而形成至少一導電通孔(示意地繪示二個導電通孔140)以貫穿封裝膠體130、形成至少一第一接墊(示意地繪示二個第一接墊150)於封裝膠體130的上表面132上以及形成至少一第二接墊(示意地繪示二個第二接墊155)於封裝膠體140的下表面134上。導電通孔140連接上表面132與下表面134,而第一接墊150電性連接每一導電通孔140的一第一端142,且第二接墊155電性連接每一導電通孔140的一第二端144。此處,導電通孔140的材質、第一接墊150的材質以及第二接墊155的材質相同,例如是銅,但不以此為限。Next, referring to FIGS. 1G and 1H at the same time, a through hole is formed in the
之後,請同時參考圖1I與圖2,形成一天線結構層160於封裝膠體130的上表面132上。天線結構層160包括一介電層162以及多個天線圖案164。介電層162具有暴露出導熱元件120的至少一開口(示意地繪示一個開口163),且介電層162覆蓋封裝膠體130的上表面132與第一接墊150。此處,介電層162例如是感光性介電層(Photo-Imageable Dielectric layer),而開口163例如是透過蝕刻的方式所形成,但不以此為限。天線圖案164內埋於介電層162且切齊於介電層162相對遠離封裝膠體130的一表面165,其中天線圖案164與第一接墊150電性連接。此處,天線圖案164包括例如是多個貼片天線(patch antenna)164a以及多個偶極天線(dipole antenna)164b,且天線圖案164的材質例如是銅,但不以此為限。After that, referring to FIGS. 1I and 2 at the same time, an
最後,請參考圖1J,形成一重配置線路層170於封裝膠體130的下表面134上,其中重配置線路層170電性連接晶片110的電極112。由於重配置線路層170的圖案化線路172在封裝膠體130上的正投影面積大於晶片110在封裝膠體130上的正投影面積,因此圖案化線路172可視為一種扇出線路。緊接著,形成多個銲球180於重佈線路層170的多個扇出接墊174上,其中銲球180與重佈線路層170電性連接。最後,可以藉由單體化製程(singulation process),以形成至少一個如圖1J所示的晶片封裝結構100a,而完成晶片封裝結構100a的製作。Finally, referring to FIG. 1J, a
在結構上,請再參考圖1J,本實施例的晶片封裝結構100a包括晶片110、導熱元件120、封裝膠體130以及重配置線路層170。晶片110例如是射頻晶片,且其具有彼此相對的主動表面111與背面113以及設置於主動表面111上的電極112。導熱元件120可透過熱界面材料125而設置且固定於晶片110的背面113上,其中導熱元件120於晶片110的背面113上的正投影面積小於背面113的面積。封裝膠體130包覆晶片110與導熱元件120,且具有彼此相對的上表面132與下表面134。導熱元件120的頂表面122切齊於封裝膠體130的上表面132。晶片110的電極112的底表面115切齊於封裝膠體130的下表面134。重配置線路層170配置於封裝膠體130的下表面134上,且電性連接晶片110的電極112。In terms of structure, please refer to FIG. 1J again. The
再者,本實施例的晶片封裝結構100a還包括導電通孔140、第一接墊150以及第二接墊155。導電通孔140貫穿封裝膠體130且連接上表面132與下表面134。第一接墊150配置於封裝膠體130的上表面132上,且電性連接每一導電通孔140的第一端142。第二接墊155配置於封裝膠體130的下表面134上,且電性連接每一導電通孔140的第二端144,其中重配置線路層170的圖案化線路層172電性連接第二接墊155。Furthermore, the
此外,本實施例的晶片封裝結構100a還包括天線結構層160,配置於封裝膠體130的上表面132上,且包括介電層162以及天線圖案164。介電層162具有暴露出導熱元件120的開口163,且介電層162覆蓋封裝膠體130的上表面132與第一接墊150。天線圖案164內埋於介電層162且切齊於介電層162相對遠離封裝膠體130的表面165,且天線圖案164與第一接墊150電性連接。另外,本實施例的晶片封裝結構100a還更包括銲球180,配置於重佈線路層170的扇出接墊174上且與重佈線路層170電性連接。In addition, the
相較於習知以晶片的主動表面朝上(face-up)的製作方式,由於本實施例的晶片110及其上的導熱元件120是以主動表面111朝下(face-down)的方式接合於載板10的黏著層12上,且晶片110的背面113配置有導熱元件120,其中封裝膠體130及天線結構層160的介電層162的開口163皆暴露出導熱元件120的頂表面122。藉此,晶片110所產生的熱可透過導熱元件120快速地傳遞至在外界,因而使得本實施例的晶片封裝結構100a可具有較佳地散熱效果。此外,重配置線路層170是配置於封裝膠體130的下表面134上且電性連接晶片110的電極112,而導電通孔140、第一接墊150與第二接墊155電性連接天線結構層160與重配置線路層170,使得本實施例的晶片封裝結構100a可具有較佳的電性表現。簡言之,本實施例的晶片封裝結構100a可同時兼顧電性與散熱的表現,可使晶片110的功能維持正常不過熱,保持天線圖案164的輻射強度與增益,進而有效地延長晶片封裝結構100a的使用壽命。換言之,本實施例的晶片封裝結構100a可視為是一種散熱增強型扇出式天線封裝的晶片封裝結構。Compared with the conventional face-up manufacturing method of the chip, the
在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It must be noted here that the following embodiments use the element numbers and part of the content of the foregoing embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
圖3繪示為本發明的一實施例的一種晶片封裝結構的剖面示意圖。請同時參考圖1J以及圖3,本實施例的晶片封裝結構100b與圖1J的晶片封裝結構100a相似,兩者的差異在於:本實施例的導熱元件包括一第一導熱元件120a與一第二導熱元件120b。第一導熱元件120a透過熱界面材料125而固定於晶片110的背面113上,其中第一導熱元件120a例如是散熱器。第二導熱元件120b透過熱界面材料127而固定於第一導熱元件120a上,其中第二導熱元件120b例如是散熱鰭片。此處,第一導熱元件120a位於熱界面材料125與熱界面材料127之間,且熱界面材料127與封裝膠體130的上表面132共平面,但不以此為限。由於本實施例的晶片封裝結構100b包括第一導熱元件120a與一第二導熱元件120b,可搭配在高性能的晶片110上,藉此來提高整體晶片封裝結構100b的散熱效果。3 is a schematic cross-sectional view of a chip package structure according to an embodiment of the invention. 1J and 3 at the same time, the
圖4繪示為本發明的另一實施例的一種晶片封裝結構的剖面示意圖。請同時參考圖1J以及圖4,本實施例的晶片封裝結構100c與圖1J的晶片封裝結構100a相似,兩者的差異在於:本實施例的晶片封裝結構100c沒有設置天線結構層160,且本實施例的晶片110a具體化為基頻晶片(baseband-chip)。導熱元件120透過熱界面材料125而固定於晶片110a的背面113a上。4 is a schematic cross-sectional view of a chip package structure according to another embodiment of the invention. 1J and 4 at the same time, the
在製程上,於圖1F的步驟之後,即移除載板10與黏著層12,而暴露出晶片110的電極112與封裝膠體130相對於上表面132的下表面134之後,直接接續圖1J的步驟,即形成重配置線路層170於封裝膠體130的下表面134上、形成銲球180於重佈線路層170的扇出接墊174上以及進行單體化程序等步驟。In the manufacturing process, after the step of FIG. 1F, the
圖5繪示為本發明的又一實施例的一種晶片封裝結構的剖面示意圖。請同時參考圖1J以及圖5,本實施例的晶片封裝結構100d與圖1J的晶片封裝結構100a相似,兩者的差異在於:本實施例的至少一晶片包括晶片110(可視為是第一晶片)與晶片110a(可視為是第二晶片),且天線圖案164對應晶片110設置。舉例來說,天線圖案164環繞晶片110的周圍設置;或者是,天線圖案164於封裝膠體130的上表面132上的正投影完全重疊或局部重疊於晶片110於封裝膠體130的上表面132上的正投影。天線圖案164於封裝膠體130的上表面132上的正投影不重疊於晶片110a於封裝膠體130的上表面132上的正投影。此處,晶片110為一射頻晶片,而晶片110a為一基頻晶片。也就是說,於對應基頻晶片處沒有設置天線圖案164。5 is a schematic cross-sectional view of a chip package structure according to another embodiment of the invention. 1J and FIG. 5 at the same time, the
此外,本實施例的導熱元件包括第一導熱元件120a與第二導熱元件120b。第一導熱元件120a透過熱界面材料125而固定於晶片110、110a的背面113、113a上,其中第一導熱元件120a例如是散熱器。第二導熱元件120b透過熱界面材料127而固定於第一導熱元件120a上,其中第二導熱元件120b例如是散熱鰭片。此處,第一導熱元件120a位於熱界面材料125與熱界面材料127之間,且熱界面材料127與封裝膠體130的上表面132共平面,但不以此為限。由於本實施例的晶片封裝結構100d包括第一導熱元件120a與一第二導熱元件120b,可搭配在高性能的晶片110、110a上,藉此來提高整體晶片封裝結構100d的散熱效果。In addition, the heat-conducting element of this embodiment includes a first heat-conducting
綜上所述,在本發明的晶片封裝結構的設計中,晶片的背面配置有導熱元件,且封裝膠體暴露出導熱元件的頂表面。藉此,晶片所產生的熱可透過導熱元件快速地傳遞至在外界,因而使得本發明的晶片封裝結構可具有較佳地散熱效果。此外,重配置線路層配置於封裝膠體的下表面上且電性連接晶片的電極,使得本發明的晶片封裝結構可具有較佳的電性表現。簡言之,本發明的晶片封裝結構可同時兼顧電性與散熱的表現,可使晶片的功能維持正常不過熱,進而有效地延長晶片封裝結構的使用壽命。To sum up, in the design of the chip package structure of the present invention, a heat-conducting element is arranged on the back of the chip, and the top surface of the heat-conducting element is exposed by the encapsulant. Thereby, the heat generated by the chip can be quickly transferred to the outside through the heat-conducting element, so that the chip package structure of the present invention can have a better heat dissipation effect. In addition, the reconfiguration circuit layer is disposed on the lower surface of the packaging compound and electrically connected to the electrodes of the chip, so that the chip packaging structure of the present invention can have better electrical performance. In short, the chip package structure of the present invention can take into account both electrical and heat dissipation performance, and can maintain the function of the chip without overheating, thereby effectively extending the service life of the chip package structure.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
10:載板
12:黏著層
100a、100b、100c、100d:晶片封裝結構
110、110a:晶片
111:主動表面
112:電極
113、113a:背面
115:底表面
120、120a、120b:導熱元件
122:頂表面
125、127:熱界面材料
130、130a:封裝膠體
132:上表面
134:下表面
140:導電通孔
142:第一端
144:第二端
150:第一接墊
155:第二接墊
160:天線結構層
162:介電層
163:開口
164:天線圖案
164a:貼片天線
164b:偶極天線
165:表面
170:重配置線路層
172:圖案化線路層
174:扇出接墊
180:銲球
10: Carrier board
12:
圖1A至圖1J繪示為本發明的一實施例的一種晶片封裝結構的製作方法的剖面示意圖。 圖2繪示為圖1J的晶片封裝結構的俯視示意圖。 圖3繪示為本發明的一實施例的一種晶片封裝結構的剖面示意圖。 圖4繪示為本發明的另一實施例的一種晶片封裝結構的剖面示意圖。 圖5繪示為本發明的又一實施例的一種晶片封裝結構的剖面示意圖。 1A to 1J are schematic cross-sectional diagrams of a manufacturing method of a chip package structure according to an embodiment of the present invention. FIG. 2 is a schematic top view of the chip package structure of FIG. 1J. 3 is a schematic cross-sectional view of a chip package structure according to an embodiment of the invention. 4 is a schematic cross-sectional view of a chip package structure according to another embodiment of the invention. 5 is a schematic cross-sectional view of a chip package structure according to another embodiment of the invention.
100a:晶片封裝結構 100a: Chip package structure
110:晶片 110: chip
111:主動表面 111: active surface
112:電極 112: Electrode
113:背面 113: Back
115:底表面 115: bottom surface
120:導熱元件 120: Thermal element
122:頂表面 122: top surface
125:熱界面材料 125: Thermal interface material
130:封裝膠體 130: Encapsulation colloid
132:上表面 132: upper surface
134:下表面 134: lower surface
140:導電通孔 140: conductive via
142:第一端 142: first end
144:第二端 144: second end
150:第一接墊 150: first pad
155:第二接墊 155: second pad
160:天線結構層 160: antenna structure layer
162:介電層 162: Dielectric layer
163:開口 163: open
164:天線圖案 164: Antenna pattern
165:表面 165: Surface
170:重配置線路層 170: reconfiguration line layer
172:圖案化線路層 172: Patterned circuit layer
174:扇出接墊 174: Fan Out Pad
180:銲球 180: solder ball
Claims (18)
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| TW201917800A (en) * | 2017-10-17 | 2019-05-01 | 聯發科技股份有限公司 | Semiconductor package |
| US20190148264A1 (en) * | 2012-09-20 | 2019-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer Level Embedded Heat Spreader |
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| US20190148264A1 (en) * | 2012-09-20 | 2019-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer Level Embedded Heat Spreader |
| TW201917800A (en) * | 2017-10-17 | 2019-05-01 | 聯發科技股份有限公司 | Semiconductor package |
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