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TWI790949B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI790949B
TWI790949B TW111110672A TW111110672A TWI790949B TW I790949 B TWI790949 B TW I790949B TW 111110672 A TW111110672 A TW 111110672A TW 111110672 A TW111110672 A TW 111110672A TW I790949 B TWI790949 B TW I790949B
Authority
TW
Taiwan
Prior art keywords
layer
type semiconductor
electrode
semiconductor layer
conductivity type
Prior art date
Application number
TW111110672A
Other languages
English (en)
Chinese (zh)
Other versions
TW202230831A (zh
Inventor
成演準
金珉成
金賢珠
Original Assignee
大陸商蘇州樂琻半導體有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020170061751A external-priority patent/KR102402917B1/ko
Priority claimed from KR1020170063490A external-priority patent/KR102388795B1/ko
Priority claimed from KR1020170078844A external-priority patent/KR102299745B1/ko
Application filed by 大陸商蘇州樂琻半導體有限公司 filed Critical 大陸商蘇州樂琻半導體有限公司
Publication of TW202230831A publication Critical patent/TW202230831A/zh
Application granted granted Critical
Publication of TWI790949B publication Critical patent/TWI790949B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
TW111110672A 2017-05-18 2018-05-18 半導體裝置 TWI790949B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020170061751A KR102402917B1 (ko) 2017-05-18 2017-05-18 반도체 소자
KR10-2017-0061751 2017-05-18
KR1020170063490A KR102388795B1 (ko) 2017-05-23 2017-05-23 반도체 소자 및 이를 포함하는 반도체 소자 제조방법
KR10-2017-0063490 2017-05-23
KR1020170078844A KR102299745B1 (ko) 2017-06-22 2017-06-22 반도체 소자
KR10-2017-0078844 2017-06-22

Publications (2)

Publication Number Publication Date
TW202230831A TW202230831A (zh) 2022-08-01
TWI790949B true TWI790949B (zh) 2023-01-21

Family

ID=64274367

Family Applications (2)

Application Number Title Priority Date Filing Date
TW111110672A TWI790949B (zh) 2017-05-18 2018-05-18 半導體裝置
TW107116933A TWI762642B (zh) 2017-05-18 2018-05-18 半導體裝置及其製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW107116933A TWI762642B (zh) 2017-05-18 2018-05-18 半導體裝置及其製造方法

Country Status (2)

Country Link
TW (2) TWI790949B (fr)
WO (1) WO2018212625A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI802870B (zh) * 2020-04-22 2023-05-21 美商西屋電器公司 使用經組態有高軸向及徑向感測器密度以及增強之分裂伽瑪量測敏感度的ｓｉｃ肖特基二極體的固定核心內偵測器設計
TWI815646B (zh) * 2022-09-07 2023-09-11 鴻海精密工業股份有限公司 半導體元件及其製造方法
EP4407656A1 (fr) * 2023-01-27 2024-07-31 Epinovatech AB Structure semi-conductrice

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999798B1 (ko) * 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20170024534A (ko) * 2015-08-25 2017-03-07 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR100986523B1 (ko) * 2010-02-08 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5139576B1 (ja) * 2011-12-09 2013-02-06 株式会社東芝 半導体発光素子の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999798B1 (ko) * 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20170024534A (ko) * 2015-08-25 2017-03-07 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지

Also Published As

Publication number Publication date
TW201901985A (zh) 2019-01-01
TWI762642B (zh) 2022-05-01
TW202230831A (zh) 2022-08-01
WO2018212625A1 (fr) 2018-11-22

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