TWI788241B - Light emitting device - Google Patents

Abstract

A light emitting device includes a circuit substrate, a first light emitting diode, a first quantum dot material layer, a first color filter layer and a transflective layer. The first light emitting diode is electrically connected to the circuit substrate. The first quantum dot material layer covers the first light emitting diode. The first color filter layer is overlapping with the first quantum dot material layer. The transflective layer is located between the first quantum dot material layer and the first color filter layer.

Description

light emitting device

The present invention relates to a light emitting device, and in particular to a light emitting device including a light emitting diode.

Light-emitting diode is a kind of electroluminescent semiconductor element, which has the advantages of high efficiency, long life, not easy to break, fast response speed and high reliability. With the investment of a lot of time and money, the size of light-emitting diodes has been reduced year by year. However, it is still difficult to use light-emitting diodes in the pixel structure of light-emitting devices, especially when a single pixel has a red pixel. Pixel, green sub-pixel and blue sub-pixel light-emitting devices, the size of a single sub-pixel is very small, whether it is in the manufacture of light-emitting diodes that fit the small-sized sub-pixel or in the transposition of the light-emitting Diodes have the problem of low process yield. In some color light-emitting devices, light-emitting diodes of the same color are arranged in a single pixel, and then quantum dot materials of different colors are placed on the light-emitting diodes. The quantum dot material can convert the color of the light emitted by the light-emitting diodes. Therefore, it is not necessary to arrange light-emitting diodes of different colors in a single pixel.

The invention provides a light emitting device, which can improve the problem of insufficient luminous efficiency of the light emitting device.

At least one embodiment of the present invention provides a light emitting device. The light emitting device includes a circuit substrate, a first light emitting diode, a first quantum dot material layer, a first color filter layer and a semi-transmissive layer. The first light emitting diode is electrically connected to the circuit substrate. The first quantum dot material layer covers the first light emitting diode. The first color filter layer overlaps the first quantum dot material layer. The semi-transflective layer is located between the first quantum dot material layer and the first color filter layer.

FIG. 1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention.

Please refer to FIG. 1 , the light emitting device 1 includes a circuit substrate 10 , a first light emitting diode L1 , a first quantum dot material layer 324 , a first color filter layer 344 and a transflective layer 330 . In this embodiment, the light emitting device 1 further includes a second light emitting diode L2, a second quantum dot material layer 326, a second color filter layer 346, a third light emitting diode L3, a first transparent covering layer 328, The second transparent covering layer 348 , the retaining wall structure 300 and the light shielding layer 310 .

The first light emitting diode L1 , the second light emitting diode L2 and the third light emitting diode L3 are electrically connected to pads of the circuit substrate 10 (not shown in FIG. 1 ). The first light emitting diode L1 , the second light emitting diode L2 and the third light emitting diode L3 can be micro light emitting diodes in any form, such as vertical light emitting diodes or horizontal light emitting diodes. In some embodiments, the first light emitting diode L1, the second light emitting diode L2 and the third light emitting diode L3 include light emitting diodes of the same color (for example, all are blue light emitting diodes), but The present invention is not limited thereto. In other embodiments, the first light emitting diode L1 , the second light emitting diode L2 and the third light emitting diode L3 include light emitting diodes of different colors. For example, the first light emitting diode L1 , the second light emitting diode L2 and the third light emitting diode L3 include green light emitting diodes, red light emitting diodes and blue light emitting diodes respectively.

The first quantum dot material layer 324 covers the first light emitting diode L1. The first quantum dot material layer 324 is suitable for converting the light emitted by the first light-emitting diode L1 into light having a _first wavelength λ1. For example, the first quantum dot material layer 324 includes a green quantum dot material layer, and the first quantum dot material layer 324 is suitable for converting the blue light emitted by the first light-emitting diode L1 into green light with the _first wavelength λ1. In some embodiments, the first quantum dot material layer 324 includes an organic material and first quantum dot material particles distributed in the organic material.

The first color filter layer 344 overlaps the first quantum dot material layer 324 . The first color filter layer 344 is suitable for passing the light emitted by the first quantum dot material layer 324 and filtering light of other colors, thereby achieving the purpose of high color purity and wide color gamut. For example, the first color filter layer 344 is a green filter layer, and can be used to filter part of the blue light that is not converted into green light by the first quantum dot material layer 324 (the blue light emitted by the first light-emitting diode L1 ), thereby enhancing the purity of green light.

The second quantum dot material layer 326 covers the second light emitting diode L2. The second quantum dot material layer 326 is suitable for converting the light emitted by the second light emitting diode L2 into light having a _second wavelength λ2. For example, the second quantum dot material layer 326 includes a red quantum dot material layer, and the second quantum dot material layer 326 is suitable for converting the blue light emitted by the second light emitting diode L2 into red light with the _second wavelength λ2. In some embodiments, the second quantum dot material layer 326 includes an organic material and second quantum dot material particles distributed in the organic material.

The second color filter layer 346 overlaps the second quantum dot material layer 326 . The second color filter layer 346 is suitable for passing the light emitted by the second quantum dot material layer 326 and filtering light of other colors, thereby achieving the purpose of high color purity and wide color gamut. For example, the second color filter layer 346 is a red filter layer, and can be used to filter part of the blue light that is not converted into red light by the second quantum dot material layer 326 (the blue light emitted by the second light-emitting diode L2 ), thereby enhancing the purity of red light.

The first transparent covering layer 328 covers the third light emitting diode L3. The second transparent cover layer 348 overlaps the first transparent cover layer 328 . In this embodiment, the light emitted by the third light emitting diode L3 can pass through the first transparent covering layer 328 and the second transparent covering layer 348 . For example, the blue light emitted by the third light emitting diode L3 can pass through the first transparent cover layer 328 and the second transparent cover layer 348 . In this embodiment, the first transparent cover layer 328 and the second transparent cover layer 348 are not color filter layers or quantum dot material layers, but the invention is not limited thereto. In other embodiments, the first transparent cover layer 328 and the second transparent cover layer 348 are replaced by a blue quantum dot material layer and a blue filter layer, wherein the blue quantum dot material layer covers the third light-emitting diode L3 , and the blue filter layer overlaps the blue quantum dot material layer.

The semi-transflective layer 330 is located between the first quantum dot material layer 324 and the first color filter layer 344, between the second quantum dot material layer 326 and the second color filter layer 346, and between the first transparent cover layer 328 and the second color filter layer. Between the two transparent cover layers 348 . In this embodiment, the transflective layer 330 includes a first transflective structure 334, a second structure 336 and a third structure 338, wherein the first structure 334 is located on the first quantum dot material Between the layer 324 and the first color filter layer 344, the second semi-transmissive structure 336 is located between the second quantum dot material layer 326 and the second color filter layer 346, and the third semi-transparent structure 338 is located in the first Between the transparent cover layer 328 and the second transparent cover layer 348 . In some embodiments, the first half-piercing structure 334 , the second half-piercing structure 336 and the third half-piercing structure 338 are separated from each other, but the invention is not limited thereto. In other embodiments, the first half-piercing structure 334 , the second half-piercing structure 336 and the third half-piercing structure 338 are connected to each other.

In this embodiment, the first transflective structure 334, the first quantum dot material layer 324 and the first color filter layer 344 overlap the first reflective layer 214 of the circuit substrate 10, the second semi-transparent structure 336, the first The two quantum dot material layers 326 and the second color filter layer 346 overlap the second reflective layer 216 of the circuit substrate 10, and the third transflective structure 338, the first transparent covering layer 328 and the second transparent covering layer 348 overlap on the The third reflective layer 218 of the circuit substrate 10 .

In this embodiment, part of the light Lg1 emitted by the first light-emitting diode L1 is converted into green light by the first quantum dot material layer 324 and then passes through the first semi-transflective structure 334 and the first color filter layer 344. Part of the light Lr1 emitted by the two light emitting diodes L2 is converted into red light by the second quantum dot material layer 326 and then passes through the second transflective structure 336 and the second color filter layer 346 . Part of the light Lb1 emitted by the third light emitting diode L3 passes through the first transparent covering layer 328 , the third transflective structure 338 and the second transparent covering layer 348 .

In this embodiment, another part of the light Lg2 emitted by the first light-emitting diode L1 is reflected by the first semi-transflective structure 334, then reflected by the first reflective layer 214, and passes through the first quantum dot material layer 324 , the first semi-transmissive structure 334 and the first color filter layer 344 . Another part of the light Lr2 emitted by the second light-emitting diode L2 is reflected by the second semi-transmissive structure 336, and then reflected by the second reflective layer 216, and passes through the second quantum dot material layer 326, the second semi-transmissive The reverse structure 336 and the second color filter layer 346 . Another part of the light Lb2 emitted by the third light-emitting diode L3 is reflected by the third semi-transparent structure 338, and then reflected by the third reflective layer 218, and passes through the first transparent covering layer 328, the third semi-transparent structure 338 and a second transparent cover layer 348 .

In some embodiments, the transflective layer 330 includes metal materials (such as magnesium, silver, aluminum, or a combination of the aforementioned metals or an alloy of the aforementioned metals), organic materials, other suitable materials, or a combination of the aforementioned materials. In some embodiments, the transflective layer 330 includes an alloy of magnesium and silver, and the ratio of magnesium to silver is 9:1, and the thickness of the transflective layer 330 is about 50 Å to 500 Å. In some embodiments, the method of forming the transflective layer 330 includes evaporation.

In this embodiment, through the arrangement of the first reflective layer 214 , the second reflective layer 216 and the third reflective layer 218 , the problem of back light leakage can be reduced. In addition, the transflective layer 330 can increase the traveling distance of light in the quantum dot material layer, thereby improving the light conversion efficiency of the quantum dot material layer.

In this embodiment, part of the external light can pass through the transflective layer 330 , so as to avoid bad influence on the display screen due to scattering. In addition, even if the external light is reflected by the first reflective layer 214, the second reflective layer 216, and the third reflective layer 218 after passing through the transflective layer 330, it will still be absorbed by the color filter element before leaving the light emitting device 1. , so it can reduce the impact of external light on the display screen after being reflected.

The barrier structure 300 surrounds the first light emitting diode L1 , the second light emitting diode L2 and the third light emitting diode L3 . In this embodiment, the retaining wall structure 300 includes a first groove 304 , a second groove 306 and a third groove 308 . The first light emitting diode L1 , the second light emitting diode L2 and the third light emitting diode L3 are respectively located in the first groove 304 , the second groove 306 and the third groove 308 . The first quantum dot material layer 324 is filled in the first groove 304 . The second quantum dot material layer 326 is filled in the second groove 306 . The first transparent covering layer 328 fills the third groove 308 . In this embodiment, the first quantum dot material layer 324 , the second quantum dot material layer 326 and the first transparent covering layer 328 are separated by the barrier structure 300 .

In some embodiments, the barrier structure 300 includes a cured photoresist material. In some embodiments, the retaining wall structure 300 includes scattering particles or reflective particles (such as carbon or titanium dioxide) or other materials.

The light-shielding layer 310 is located on the retaining wall structure 300 . The light shielding layer 310 is, for example, a black matrix. The light shielding layer 310 includes a first opening 314 , a second opening 316 and a third opening 318 . The first opening 314 , the second opening 316 and the third opening 318 respectively overlap the first groove 304 , the second groove 306 and the third groove 308 of the retaining wall structure 300 . The first color filter layer 344 overlaps the first opening 314 . The second color filter layer 346 overlaps the second opening 316 . The second transparent covering layer 348 overlaps the third opening 318 . In this embodiment, the first color filter layer 344 , the second color filter layer 346 and the second transparent cover layer 348 are separated by the light shielding layer 310 , but the invention is not limited thereto. In other embodiments, the first color filter layer 344, the second color filter layer 346 and the second transparent cover layer 348 cover the top surface of the light shielding layer 310, and the first color filter layer 344, the second color filter layer Layer 346 and second transparent cover layer 348 are in contact with each other.

In some embodiments, the width of the bottom surface of the light-shielding layer 310 is equal to the width of the top surface of the retaining wall structure 300 , and the light-shielding layer 310 covers the entire top surface of the retaining wall structure 300 , but the invention is not limited thereto. In other embodiments, the width of the bottom surface of the light shielding layer 310 is smaller than the width of the top surface of the retaining wall structure 300 , and the light shielding layer 310 does not cover part of the top surface of the retaining wall structure 300 . In some embodiments, the light shielding layer 310 includes a cured photoresist material. In some embodiments, the light shielding layer 310 contains black particles (such as carbon). In some embodiments, both the light shielding layer 310 and the retaining wall structure 300 contain black particles, wherein the content of the black particles in the light shielding layer 310 is greater than that in the retaining wall structure 300 .

FIG. 2 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 2 follows the component numbers and part of the content of the embodiment in FIG. 1 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The main difference between the light emitting device 2 in FIG. 2 and the light emitting device 1 in FIG. 1 is that the semi-transflective layer 330 of the light emitting device 2 is sandwiched between the buffer layers.

Please refer to FIG. 2 , the light emitting device 2 includes a first bottom buffer layer 354 , a second bottom buffer layer 356 , a third bottom buffer layer 358 , a first top buffer layer 364 , a second top buffer layer 366 and a third top buffer layer 368 .

The first bottom buffer layer 354 is located between the first quantum dot material layer 324 and the first semi-transflective structure 334 of the semi-transflective layer 330, and the first top buffer layer 364 is located between the first color filter layer 344 and the semi-transmissive layer. The first half of 330 penetrates between anti-structures 334 . In other words, the first half transflective structure 334 is located between the first bottom buffer layer 354 and the first top buffer layer 364 .

The second bottom buffer layer 356 is located between the second quantum dot material layer 326 and the second semi-transflective structure 336 of the semi-transflective layer 330, and the second top buffer layer 366 is located between the second color filter layer 346 and the semi-transflective layer. Between the second half of the penetrating structure 336 of 330 . In other words, the second half transflective structure 336 is located between the second bottom buffer layer 356 and the second top buffer layer 366 .

The third bottom buffer layer 358 is located between the third quantum dot material layer 328 and the third semi-transflective structure 338 of the semi-transflective layer 330, and the third top buffer layer 368 is located between the third color filter layer 348 and the semi-transflective layer. The third half of 330 is between the transversal structures 338 . In other words, the third half transflective structure 338 is located between the third bottom buffer layer 358 and the third top buffer layer 368 .

In this embodiment, the first bottom buffer layer 354 , the second bottom buffer layer 356 and the third bottom buffer layer 358 are separated from each other, but the invention is not limited thereto. In other embodiments, the first bottom buffer layer 354 , the second bottom buffer layer 356 , and the third bottom buffer layer 358 are connected to each other. In this embodiment, the first top buffer layer 364 , the second top buffer layer 366 and the third top buffer layer 368 are separated from each other, but the invention is not limited thereto. In other embodiments, the first top buffer layer 364 , the second top buffer layer 366 and the third top buffer layer 368 are connected to each other.

In some embodiments, the first bottom buffer layer 354, the second bottom buffer layer 356, the third bottom buffer layer 358, the first top buffer layer 364, the second top buffer layer 366, and the third top buffer layer 368 are transparent inorganic layer, the material of which includes, for example, a hydrogen-containing or hydrogen-free silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, or other suitable materials.

In this embodiment, the buffer layer can increase the adhesion of the transflective layer to the quantum dot material layer and the color filter layer, thereby reducing the probability of peeling off.

Fig. 3 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 3 uses the component numbers and parts of the content in the embodiment in FIG. 1 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The main difference between the light emitting device 3 in FIG. 3 and the light emitting device 1 in FIG. 1 lies in that the first half transflective structure 334 , the second half transflective structure 336 and the third half transflective structure 338 of the light emitting device 3 are connected to each other.

Please refer to FIG. 3 , for example, the light shielding layer 310 is formed on the transflective layer 330 and the barrier structure 300 . The partial transflective layer 330 is located between the retaining wall structure 300 and the light shielding layer 310 .

Fig. 4 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 4 follows the component numbers and partial content of the embodiment in FIG. 1 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

The main difference between the light-emitting device 4 in FIG. 4 and the light-emitting device 1 in FIG. surface, and the first color filter layer 344, the second color filter layer 346 and the second transparent cover layer 348 are in contact with each other.

Referring to FIG. 4 , the width of the bottom surface of the light-shielding layer 310 is smaller than the width of the top surface of the retaining wall structure 300 , and the light-shielding layer 310 does not cover part of the top surface of the retaining wall structure 300 . The first color filter layer 344 , the second color filter layer 346 and the second transparent covering layer 348 cover the side surfaces of the light shielding layer 310 and the top surface of the light shielding layer 310 .

Fig. 5 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 5 follows the component numbers and part of the content of the embodiment in FIG. 1 , wherein the same or similar numbers are used to denote the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

Please refer to FIG. 5, the circuit substrate 10 of the light emitting device 5 includes a substrate 100, a first insulating layer 110, a second insulating layer 120, a third insulating layer 130, a fourth insulating layer 140, a fifth insulating layer 150, and a plurality of active components. 200, the first reflective layer 214, the second reflective layer 216, the third reflective layer 218, the first connection layer 224, the second connection layer 226 and the third connection layer 228, a plurality of first pads P1 and a plurality of second Pad P2.

The material of the substrate 100 can be glass, quartz, organic polymer or opaque/reflective material (eg conductive material, metal, wafer, ceramic or other applicable materials) or other applicable materials. If conductive materials or metals are used, an insulating layer (not shown) is covered on the carrier board B2 to avoid short circuit problems.

The first insulating layer 110 is formed on the substrate 100 . A plurality of active devices 200 are formed on the first insulating layer 110 . The active device 200 includes a channel layer 202 , a gate 204 , a source 208 and a drain 206 . The gate 204 overlaps the channel layer 202 , and the second insulating layer 120 is sandwiched between the gate 204 and the channel layer 202 . The third insulating layer 130 covers the gate 204 , and the source 208 and the drain 206 are located on the third insulating layer 130 and electrically connected to the channel layer 202 respectively.

Although in this embodiment, the active device 200 is an example of a top-gate thin film transistor, the present invention is not limited thereto. In other embodiments, the active device 200 may also be a bottom gate type or other types of thin film transistors.

The fourth insulating layer 140 is located on the third insulating layer 130 , the source 208 and the drain 206 . The first reflective layer 214 , the second reflective layer 216 and the third reflective layer 218 , the first connection layer 224 , the second connection layer 226 and the third connection layer 228 are located on the fourth insulating layer 140 . In some embodiments, the first reflective layer 214 , the second reflective layer 216 and the third reflective layer 218 , the first connection layer 224 , the second connection layer 226 and the third connection layer 228 belong to the same conductive layer. In some embodiments, the materials of the first reflective layer 214 , the second reflective layer 216 , the third reflective layer 218 , the first connection layer 224 , the second connection layer 226 and the third connection layer 228 include metal. In some embodiments, the first reflective layer 214 , the second reflective layer 216 and the third reflective layer 218 are floating, but the invention is not limited thereto. In other embodiments, the first reflective layer 214 , the second reflective layer 216 and the third reflective layer 218 are respectively connected to the first connection layer 224 , the second connection layer 226 and the third connection layer 228 .

The fifth insulating layer 150 is located on the fourth insulating layer 140 , the first reflective layer 214 , the second reflective layer 216 , the third reflective layer 218 , the first connection layer 224 , the second connection layer 226 and the third connection layer 228 . A plurality of first pads P1 and a plurality of second pads P2 are located on the fifth insulating layer 150 . In some embodiments, the material of the first pad P1 and the second pad P2 includes a transparent conductive material, such as indium tin oxide.

The plurality of first pads P1 are respectively electrically connected to corresponding active devices 200 through the first connection layer 224 , the second connection layer 226 and the third connection layer 228 .

The first light emitting diode L1 , the second light emitting diode L2 and the third light emitting diode L3 are electrically connected to the corresponding first pad P1 and the corresponding second pad P2 respectively.

In this embodiment, there is a first resonant cavity between the first reflective layer 214 and the first semi-transflective structure 334, and the thickness H1 of the first resonant cavity is nλ ₁ /2, where λ ₁ is the first quantum dot material layer 324 wavelengths of emitted light, and n is a positive integer ranging from 1 to 100. _In some embodiments, λ1 is from 485 nm to 588 nm.

There is a second resonant cavity between the second reflective layer 216 and the second semi-transflective structure 336, the thickness H2 of the second resonant cavity is mλ ₂ /2, wherein λ ₂ is the light emitted by the second quantum dot material layer 326 wavelength, and m is a positive integer from 1 to 100. In some embodiments, _λ2 is from 589 nm to 780 nm.

In this embodiment, the distance H3 between the third reflective layer 218 and the third semi-transflective structure 338 , the thickness H1 of the first resonant cavity, and the thickness H2 of the second resonant cavity are different from each other. In this embodiment, the intensity of the light emitted by the light emitting device 5 can be enhanced by adjusting the thickness of the resonant cavity, and the color purity of the light can be improved.

Fig. 6 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. It must be noted here that the embodiment in FIG. 6 follows the component numbers and part of the content of the embodiment in FIG. 5 , wherein the same or similar numbers are used to indicate the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated here.

Please refer to FIG. 6, the first reflective layer 214, the second reflective layer 216, the third reflective layer 218, the first connection layer 224, the second connection layer 226 and the third connection layer 228 are used as pads of the circuit substrate 10, and are located the surface of the circuit board 10.

In this embodiment, the first light-emitting diode L1 is electrically connected to the first reflective layer 214 and the first connection layer 224, and the second light-emitting diode L2 is electrically connected to the second reflective layer 216 and the second connection layer. 226 , and the third light emitting diode L3 is electrically connected to the third reflective layer 218 and the third connection layer 228 .

To sum up, when using the light-emitting device, external light can pass through the transflective layer, so as to avoid bad influence of light scattering on the display screen. In addition, even if the external light is reflected by the reflective layer after passing through the transflective layer, it will be absorbed by the color filter element before leaving the light-emitting device, so that the impact of the external light on the display screen after being reflected can be reduced. In addition, the setting of the transflective layer can increase the traveling distance of light in the quantum dot material layer, thereby improving the light conversion efficiency of the quantum dot material layer.

1 ,2 ,3, 4, 5, 6: Lighting device 10: Circuit board 100: Substrate 110: the first insulating layer 120: second insulating layer 130: The third insulating layer 140: The fourth insulating layer 150: fifth insulating layer 200: active components 202: channel layer 204: gate 206: drain 208: source 214: the first reflective layer 216: second reflective layer 218: The third reflective layer 224: first connection layer 226: Second connection layer 228: The third connection layer 300: retaining wall structure 304: the first groove 306: the second groove 308: The third groove 310: shading layer 314: first opening 316: second opening 318: The third opening 324: the first quantum dot material layer 326: the second quantum dot material layer 328: The first transparent covering layer 330: semi-transparent layer 334: The first half of the penetrating structure 336: The second half of the penetrating structure 338: The third half of the penetrating structure 344: the first color filter layer 346: the second color filter layer 348: second transparent covering layer 354: The first bottom buffer layer 356: The second bottom buffer layer 358: The third bottom buffer layer 364: the first top buffer layer 366: Second top buffer layer 368: The third top buffer layer H1, H2: Thickness H3: Distance L1: the first light-emitting diode L2: Second light-emitting diode L3: The third light-emitting diode Lb1, Lb2, Lg1, Lg2, Lr1, Lr2: Light P1: The first pad P2: Second pad

FIG. 1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. Fig. 3 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. Fig. 4 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. Fig. 5 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. Fig. 6 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention.

1: Lighting device

10: Circuit board

214: the first reflective layer

216: second reflective layer

218: The third reflective layer

300: retaining wall structure

304: the first groove

306: the second groove

308: The third groove

310: shading layer

314: first opening

316: second opening

318: The third opening

324: the first quantum dot material layer

326: the second quantum dot material layer

328: The first transparent covering layer

330: semi-transparent layer

334: The first half of the penetrating structure

336: The second half of the penetrating structure

338: The third half of the penetrating structure

344: the first color filter layer

346: the second color filter layer

348: second transparent covering layer

L1: the first light-emitting diode

L2: Second light-emitting diode

L3: The third light-emitting diode

Lb1, Lb2, Lg1, Lg2, Lr1, Lr2: Light

Claims (9)

A light-emitting device, comprising: a circuit substrate; a first light-emitting diode electrically connected to the circuit substrate; a first quantum dot material layer covering the first light-emitting diode; a first color filter A layer overlapping the first quantum dot material layer; a half transflective layer located between the first quantum dot material layer and the first color filter layer; and a retaining wall structure surrounding the first light emitting diode , wherein the first quantum dot material layer is filled into a first groove of the barrier structure; and a light-shielding layer is located on the barrier structure, wherein the first color filter layer overlaps a layer of the light-shielding layer Open first. The light-emitting device as claimed in claim 1, further comprising: a second light-emitting diode electrically connected to the circuit substrate; a second quantum dot material layer covering the second light-emitting diode, wherein the first A quantum dot material layer and the second quantum dot material layer respectively include a green quantum dot material layer and a red quantum dot material layer; a second color filter layer overlaps the second quantum dot material layer, wherein the first color The filter layer and the second color filter layer respectively include a green filter layer and a red filter layer, wherein the semi-transmissive layer includes a first semi-transmissive structure and a second semi-transmissive structure, the first half The transflective structure is located between the first quantum dot material layer and the first color between the filter layers, and the second semi-transmissive structure is located between the second quantum dot material layer and the second color filter layer. The light-emitting device as claimed in claim 2, further comprising: a third light-emitting diode electrically connected to the circuit substrate; a first transparent covering layer covering the third light-emitting diode; a second transparent A cover layer overlapping the first transparent cover layer, wherein the transflective layer further includes a third semi-transparent structure, the third semi-transparent structure is located between the first transparent cover layer and the second transparent cover layer between. The light-emitting device as claimed in claim 3, wherein the first semi-transflective structure, the second semi-transparent structure and the third semi-transparent structure are separated from each other. The light-emitting device as claimed in claim 3, wherein the first semi-transflective structure, the second semi-transparent structure and the third semi-transparent structure are connected to each other. The light-emitting device according to claim 2, wherein the circuit substrate includes: a first reflective layer overlapping the first quantum dot material layer, wherein there is a gap between the first reflective layer and the first semi-transparent structure The first resonant cavity, the thickness of the first resonant cavity is nλ ₁ /2, wherein λ ₁ is the wavelength of the light emitted by the first quantum dot material layer, and n is a positive integer from 1 to 100; and a second A reflective layer overlapping the second quantum dot material layer, wherein there is a second resonant cavity between the second reflective layer and the second semi-transflective structure, the thickness of the second resonant cavity is mλ ₂ /2, wherein λ ₂ is the wavelength of light emitted by the second quantum dot material layer, and m is a positive integer ranging from 1 to 100. The light-emitting device as claimed in claim 1, wherein the semi-transflective layer comprises metal material or organic material. The light-emitting device according to claim 1, further comprising: a first bottom buffer layer located between the first quantum dot material layer and the semi-transflective layer; and a first top buffer layer located at the first color between the filter layer and the semi-transflective layer. The light-emitting device according to claim 1, wherein part of the transflective layer is located between the retaining wall structure and the light-shielding layer.

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