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TWI787310B - Heater and its production method - Google Patents

Heater and its production method Download PDF

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TWI787310B
TWI787310B TW107126253A TW107126253A TWI787310B TW I787310 B TWI787310 B TW I787310B TW 107126253 A TW107126253 A TW 107126253A TW 107126253 A TW107126253 A TW 107126253A TW I787310 B TWI787310 B TW I787310B
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heater
terminals
parallel
terminal
divided
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TW107126253A
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Chinese (zh)
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TW201935996A (en
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松井誠彦
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日商邁圖技術(日本)股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/02Details
    • H05B3/06Heater elements structurally combined with coupling elements or holders
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00Details of electric heating devices
    • H05B1/02Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227Applications
    • H05B1/023Industrial applications
    • H05B1/0233Industrial applications for semiconductors manufacturing
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/02Details
    • H05B3/03Electrodes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/68Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/28Clamped connections, spring connections
    • H01R4/30Clamped connections, spring connections utilising a screw or nut clamping member
    • H01R4/34Conductive members located under head of screw
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/58Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
    • H01R4/64Connections between or with conductive parts having primarily a non-electric function, e.g. frame, casing, rail
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002Heaters using a particular layout for the resistive material or resistive elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017Manufacturing methods or apparatus for heaters
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Resistance Heating (AREA)

Abstract

In the parallel heater in which the heater pattern is formed in parallel between the terminals, it is possible to easily perform resistance adjustment before productization without being skilled, and the original function is not impaired. In the heater (30) in which the heater patterns (31, 32) are provided in parallel between the terminals (A, B), each terminal is divided into two parts, that is, divided terminals that are only electrically connected to the heater pattern (31) ( 37) and a split terminal (38) that is only turned on with the heater pattern (32). The dummy series path (45) formed between the divided terminals (37, 37) and the divided terminals (38, 38) are formed in a state before the heater body (36) is fabricated and before the power supply bolts (50) are mounted. After the virtual series path (46) is respectively adjusted by the resistors, a plurality of virtual series heater patterns are turned on by installing power supply bolts to the respective terminals to form a parallel circuit.

Description

加熱器及其製造方法Heater and manufacturing method thereof

本發明涉及一種加熱器及其製造方法,上述加熱器在半導體製造工藝等中適當地用作加熱晶片的加熱器。The present invention relates to a heater suitably used as a heater for heating a wafer in a semiconductor manufacturing process and the like, and a method for manufacturing the same.

陶瓷加熱器等加熱器在半導體、液晶的製造工藝中廣泛用作用於加熱晶片的加熱裝置,已知一種加熱器,其在端子間以螺旋狀、旋渦狀、蜿蜒狀等既定加熱器圖案在基材上形成由PG(熱解石墨)等導電性材料構成的加熱器元件(專利文獻1等)。Heaters such as ceramic heaters are widely used as heating devices for heating wafers in the manufacturing process of semiconductors and liquid crystals. A heater is known in which a predetermined heater pattern such as a spiral, a spiral, or a meander is formed between terminals. A heater element made of a conductive material such as PG (pyrolytic graphite) is formed on a substrate (Patent Document 1, etc.).

這樣的加熱器有:在端子A、B之間串聯地形成有加熱器圖案11的串聯型加熱器10(圖7)、及在端子A、B之間並聯地形成有加熱器圖案21、22的並聯型加熱器20(圖8),根據被加熱物的形狀或外徑、組裝有加熱器的裝置的使用目的、應用的電源等,以能夠發揮最佳加熱性能的方式適當選擇使用。另外,圖7的串聯型加熱器10及圖7的並聯型加熱器20中的加熱器圖案11及21、22均是作為簡化的一例表示。Such heaters include a serial heater 10 ( FIG. 7 ) in which a heater pattern 11 is formed in series between terminals A and B, and a heater pattern 21 and 22 formed in parallel between terminals A and B. The parallel heater 20 ( FIG. 8 ) is appropriately selected and used so as to exhibit the best heating performance according to the shape or outer diameter of the object to be heated, the purpose of use of the device incorporating the heater, and the applied power supply. In addition, the heater patterns 11, 21, and 22 in the serial heater 10 of FIG. 7 and the parallel heater 20 of FIG. 7 are shown as simplified examples.

在許多情況下,如果利用加熱器加熱半導體晶片等被加熱物,那麼具有其外周部的溫度低於內周部的傾向,因此在加熱器的設計中,減小外周部的電阻值,增大內周部的電阻值,從而對從外周部到內周部的整個區域賦予熱均勻性。或者,視情況有時也要求對外周部與內周部、上半部與下半部、右半部與左半部等不同的區域賦予不同的放熱性。在任一情況下,為了滿足其設計要求,都必須調整加熱器圖案的電阻值。In many cases, if a heater is used to heat a heated object such as a semiconductor wafer, the temperature of the outer peripheral portion tends to be lower than that of the inner peripheral portion. Therefore, in the design of the heater, the resistance value of the outer peripheral portion should be reduced and the resistance value of the outer peripheral portion should be increased. The electrical resistance value of the inner peripheral portion is increased, thereby imparting thermal uniformity to the entire area from the outer peripheral portion to the inner peripheral portion. Alternatively, it may be required to impart different heat dissipation properties to different regions such as the outer peripheral portion and the inner peripheral portion, the upper half portion and the lower half portion, the right half portion and the left half portion as the case may be. In either case, in order to meet its design requirements, it is necessary to adjust the resistance value of the heater pattern.

例如,圖7所示的串聯型加熱器10的加熱器圖案11在其每個半周沿徑向具有外周部11a、中間部11b、及內周部11c,參照圖9說明為了使這些各部分均等地發熱而對這些各部分的每個調整電阻值的情況的一例,為了測定各部分的電阻值,設定測定點P1~P4,應進行調整以使端子A至測定點P1的區間(外周部11a)的電阻值r1成為1.59 Ω、測定點P1至測定點P2的區間(中間部11b)的電阻值r2成為0.96 Ω、測定點P2至測定點P3的區間(內周部11c)的電阻值r3成為1.36 Ω、測定點P3至測定點P4的區間(中間部11b)的電阻值r4成為0.96 Ω、測定點P4至端子B的區間(外周部11a)的電阻值r5成為1.59 Ω(各區間電阻值r1~r5是調整後的基準值)。For example, the heater pattern 11 of the serial heater 10 shown in FIG. An example of the case where the resistance value is adjusted for each of these parts due to heat generation. In order to measure the resistance value of each part, the measurement points P1 to P4 are set, and the adjustment should be made so that the section from the terminal A to the measurement point P1 (outer peripheral part 11a ) resistance value r1 is 1.59 Ω, the resistance value r2 of the section from measurement point P1 to measurement point P2 (middle part 11b) is 0.96 Ω, and the resistance value r3 of the section from measurement point P2 to measurement point P3 (inner peripheral part 11c) 1.36 Ω, the resistance value r4 of the section from the measurement point P3 to the measurement point P4 (intermediate part 11b) is 0.96 Ω, and the resistance value r5 of the section from the measurement point P4 to the terminal B (outer peripheral part 11a) is 1.59 Ω (each section resistance The values r1~r5 are adjusted reference values).

在串聯型加熱器10的加熱器圖案11中,能夠從端子A經由測定點P1~P4至端子B單向地測定、調整電阻值。即,從端子A至各測定點(包括端子B)的電阻值與其間的總區間電阻值一致(例如,從端子A至P4的電阻值為r1+r2+r3=3.91 Ω),因此只要在端子A與各測定點P1~P4及端子B之間測定電阻值,以它們與上述區間電阻值相符的方式依次調整即可,能夠比較容易地進行電阻調整。具體來說,能夠將加熱器圖案11的元件以比設計電阻值低一些的方式形成得厚一些,並根據在各測定點所測定的電阻值切削該區間的元件來調整電阻。In the heater pattern 11 of the serial heater 10 , the resistance value can be measured and adjusted unidirectionally from the terminal A to the terminal B via the measurement points P1 to P4 . That is, the resistance value from terminal A to each measurement point (including terminal B) is consistent with the total interval resistance value between them (for example, the resistance value from terminal A to P4 is r1+r2+r3=3.91Ω), so as long as the resistance value between terminal A and each The resistance values measured between the measurement points P1 to P4 and the terminal B may be sequentially adjusted so that they correspond to the resistance values of the above-mentioned intervals, and the resistance adjustment can be performed relatively easily. Specifically, the elements of the heater pattern 11 can be formed thicker so as to be slightly lower than the designed resistance value, and the resistance can be adjusted by cutting the elements in the area according to the resistance value measured at each measurement point.

然而,於在端子A、B間分別形成有遍及半周的加熱器圖案21、22的並聯型加熱器20(圖8)中,即便欲在加熱器圖案21、22內設定的多個測定點測定電阻值並加以調整,在各測定點所測定的電阻值也有從端子A至該測定點的路徑(A-Pn)和從該測定點至端子A的路徑(Pn-A)這2條電流路徑,如果切削經測定的區間的元件來調整電阻,那麼其他區間的電阻值也會變化,所以必須考慮這些進行加工,存在對調整電阻要求熟練的問題。However, in the parallel heater 20 ( FIG. 8 ) in which the heater patterns 21 and 22 are formed over the half circumference between the terminals A and B, respectively, even if a plurality of measurement points set in the heater patterns 21 and 22 are to be measured, The resistance value measured at each measurement point also has two current paths: the path from terminal A to the measurement point (A-Pn) and the path from the measurement point to terminal A (Pn-A). , If the components in the measured section are cut to adjust the resistance, the resistance value of other sections will also change, so it is necessary to take this into consideration for processing, and there is a problem that it requires proficiency in adjusting the resistance.

參照圖10詳細地進行說明,將加熱器20的設計電阻值設為1.61 Ω,在端子A、B間的加熱器圖案21、22中設定測定點P11~P14,應進行調整以使端子A與測定點P1之間的區間(加熱器圖案21的外周部21a及中間部21b)的電阻值r11成為1.01 Ω、測定點P11、P12之間的區間(加熱器圖案21的內周部21c及中間部21b)的電阻值r12成為0.97 Ω、測定點P12與端子B之間的區間(加熱器圖案21的外周部21a)的電阻值r13成為0.68 Ω、端子B與測定點P13之間的區間(加熱器圖案22的外周部22a及中間部22b)的電阻值r14成為1.01 Ω、測定點P13、P14之間的區間(加熱器圖案22的內周部22c及中間部22b)的電阻值r15成為0.97 Ω、測定點P14與端子A之間的區間(加熱器圖案22的外周部22a)的電阻值r15成為0.68 Ω(各區間電阻值r11~r15是調整後的基準值)。Describe in detail with reference to Fig. 10, set the design resistance value of the heater 20 as 1.61 Ω, set the measurement points P11 to P14 in the heater patterns 21 and 22 between the terminals A and B, and adjust so that the terminal A and The resistance value r11 of the section between the measurement points P1 (the outer peripheral portion 21 a and the middle portion 21 b of the heater pattern 21 ) is 1.01 Ω, and the resistance value r11 of the section between the measurement points P11 and P12 (the inner peripheral portion 21 c and the middle portion of the heater pattern 21 ) is 1.01 Ω. The resistance value r12 of the part 21b) becomes 0.97 Ω, the resistance value r13 of the section between the measurement point P12 and the terminal B (outer peripheral part 21a of the heater pattern 21) becomes 0.68 Ω, and the section between the terminal B and the measurement point P13 ( The resistance value r14 of the outer peripheral part 22a and the middle part 22b of the heater pattern 22 becomes 1.01Ω, and the resistance value r15 of the section between the measurement points P13 and P14 (the inner peripheral part 22c and the middle part 22b of the heater pattern 22) becomes 0.97 Ω, and the resistance value r15 of the section between the measurement point P14 and the terminal A (the outer peripheral portion 22 a of the heater pattern 22 ) is 0.68 Ω (the resistance values r11 to r15 of each section are adjusted reference values).

這種情況下的各區間的設計上的電阻值如表1所示,設計成路徑A-B與路徑B-A完全並聯且具有相同的電阻值(1.61 Ω),並且在各路徑中位於對稱位置的測定區間(A-P11與B-P14、P11-P12與P13-P14、P12-B與P14-A)具有相同的電阻值。在並聯圖案中,對於各測定點,從端子A起的路徑和至端子A的路徑這2條路徑並聯,所以例如端子A與測定點P11之間的區間(A-P11)中的電阻值為1/{1/r11+1/(r12+r13+r14+r15+r16)}=1/(1/1.26+1/5.18)=1.01 Ω(參照圖10(b))。In this case, the design resistance value of each section is shown in Table 1, and the measurement section is designed so that the path A-B and the path B-A are completely parallel and have the same resistance value (1.61 Ω), and are located at symmetrical positions in each path (A-P11 and B-P14, P11-P12 and P13-P14, P12-B and P14-A) have the same resistance value. In the parallel pattern, for each measurement point, two paths, the path from terminal A and the path to terminal A, are connected in parallel, so for example, the resistance value in the section (A-P11) between terminal A and measurement point P11 is 1/{1/r11+1/(r12+r13+r14+r15+r16)}=1/(1/1.26+1/5.18)=1.01Ω (see FIG. 10( b )).

(表1)(Table 1)

像這樣,在並聯圖案中,對於各測定點,從端子A起的路徑和從該測定點至端子A的路徑這2條路徑並聯,所以各測定點上的電阻值不像串聯圖案那樣是單純的總計值,如果在某一區間調整電阻,那麼其他區間的電阻值也會變化,極難進行精密的調整。在構成並聯路徑的區間A-Pn與區間Pn(-B)-A的電阻值之差大的情況下特別難以調整,對元件加工要求熟練的技術。In this way, in the parallel pattern, for each measurement point, two paths, the path from terminal A and the path from the measurement point to terminal A, are connected in parallel, so the resistance value at each measurement point is not as simple as in the series pattern. If you adjust the resistance in a certain range, the resistance value in other ranges will also change, and it is extremely difficult to make precise adjustments. When the difference in resistance between the section A-Pn and the section Pn(-B)-A constituting the parallel path is large, adjustment is particularly difficult, and skilled technology is required for element processing.

對這一點示出具體例來更詳細地進行說明,若僅在製造加熱器時的CVD條件下則實際上難以使構成並聯型加熱器20的加熱器圖案21、22的元件的厚度遍及整個區域完全相同,多數情況下,元件的厚度局部不同地形成。因此,在各測定點P11、P12、B、P13、P14所測定的測定電阻值r11~r16存在大幅偏離圖10(b)所示的基準值而成為如圖11所示的測定值的情況。在該例中,並聯型加熱器20的加熱器圖案21、22的上半部的元件大致形成為規定的厚度,因此上半部的區間電阻值r11、r12、r13均大致符合圖10(b)所示的基準值,幾乎不需要通過元件切削加工來進行電阻調整,但下半部的元件形成得比規定厚,所以下半部的區間電阻值r14~r16均比圖10(b)所示的基準值低0.8~1.1 Ω左右,必須通過切削使該部分的元件變薄來調整電阻以使它們的區間電阻值與基準值大致相同。This point will be described in more detail with a specific example. It is actually difficult to make the thickness of the elements constituting the heater patterns 21 and 22 of the parallel heater 20 cover the entire area completely only under the CVD conditions when manufacturing the heater. Similarly, in many cases, the thickness of the element is formed locally differently. Therefore, the measured resistance values r11 to r16 measured at the respective measurement points P11, P12, B, P13, and P14 may deviate greatly from the reference value shown in FIG. In this example, the elements in the upper half of the heater patterns 21 and 22 of the parallel heater 20 are approximately formed with a predetermined thickness, so the section resistance values r11, r12, and r13 of the upper half are all approximately in accordance with FIG. 10 (b ) shows the reference value, there is almost no need to adjust the resistance by cutting the element, but the element in the lower half is formed thicker than specified, so the resistance values r14 to r16 in the lower half are all higher than those shown in Figure 10(b) The reference value shown is about 0.8 to 1.1 Ω lower, and it is necessary to adjust the resistance by cutting and thinning the components in this part so that their interval resistance values are approximately the same as the reference value.

例如,由於測定區間B-P13的測定電阻值0.90 Ω低於圖10(b)所示的同一區間的電阻值r14=1.01 Ω,所以必須切削加熱器元件來調整電阻,但根據前面的式子可知,各區間電阻值也和其他區間的區間電阻值相關聯,所以如果改變該區間電阻值r14,那麼前面的其他區間(原本就接近基準值而不需要調整電阻的區間、已經調整過電阻的區間)的電阻值也會改變。因此,在對某一區間進行電阻調整時,必須在預測由此其他區間的電阻值也會變化及其變化量的基礎上,一面考慮整體的平衡一面進行元件切削加工,要求基於經驗法則的熟練技術。 現有技術文獻 專利文獻For example, since the measured resistance value of 0.90 Ω in the measurement section B-P13 is lower than the resistance value r14 = 1.01 Ω in the same section shown in Fig. 10(b), it is necessary to cut the heater element to adjust the resistance. It can be seen that the resistance value of each interval is also related to the interval resistance value of other intervals, so if the resistance value r14 of this interval is changed, then the other intervals in front (the intervals that are close to the reference value and do not need to adjust the resistance, and those that have adjusted the resistance) interval) the resistance value will also change. Therefore, when adjusting the resistance of a certain section, it is necessary to perform component cutting while considering the overall balance on the basis of predicting that the resistance value of other sections will also change and the amount of change. technology. Prior Art Documents Patent Documents

專利文獻1:JP特開平11-354260號公報Patent Document 1: JP Unexamined Patent Publication No. 11-354260

(發明要解決的課題)(The problem to be solved by the invention)

因此,本發明要解決的課題在於:對於在端子間並聯地形成有加熱器圖案的並聯型加熱器,不要求熟練就能夠容易進行產品化前的電阻調整而無損其原本的功能。 (用於解決課題的手段)Therefore, the problem to be solved by the present invention is to easily perform resistance adjustment before commercialization without impairing the original function of a parallel heater in which heater patterns are formed in parallel between terminals without requiring skill. (Means used to solve the problem)

即,本案的技術方案1涉及的發明是一種並聯型加熱器,該並聯型加熱器在分別要安裝供電螺栓的一對端子間並聯地形成有多個加熱器圖案,其特徵在於,各端子根據加熱器圖案數量以相互不接觸的方式分割成多個,這些多個分割端子之間通過供電螺栓導通,在未安裝供電螺栓的狀態下,在一個端子的一個分割端子與另一個端子的一個分割端子之間形成有多個虛擬串聯加熱器圖案,通過安裝供電螺栓,多個虛擬串聯加熱器圖案之間導通而形成並聯電路。That is, the invention according to Claim 1 of the present application is a parallel heater in which a plurality of heater patterns are formed in parallel between a pair of terminals to which power supply bolts are respectively mounted, and each terminal is characterized in that The number of heater patterns is divided into multiple in such a way that they do not touch each other. These multiple divided terminals are electrically connected through the power supply bolt. In the state where the power supply bolt is not installed, one divided terminal of one terminal is connected to one divided terminal of the other terminal. A plurality of virtual series heater patterns are formed between the terminals, and by installing power supply bolts, the plurality of virtual series heater patterns are conducted to form a parallel circuit.

本案的技術方案2涉及的發明根據技術方案1所述的並聯型加熱器,其特徵在於,供電螺栓的頭部直接或借助由導電性材料構成的墊片與形成加熱器圖案的加熱器元件接觸。The invention according to Claim 2 of the present application is the parallel heater according to Claim 1, wherein the head of the power supply bolt is in contact with the heater element forming the heater pattern directly or via a washer made of a conductive material. .

本案的技術方案3涉及的發明根據技術方案1或2所述的並聯型加熱器,其特徵在於,在一對端子間並聯地形成有第一及第二加熱器圖案,各端子分割成僅與第一加熱器圖案導通的第一分割端子和僅與第二加熱器圖案導通的第二分割端子。The invention according to claim 3 of the present application is the parallel heater according to claim 1 or 2, wherein first and second heater patterns are formed in parallel between a pair of terminals, and each terminal is divided into The first divided terminal conducting to the first heater pattern and the second divided terminal conducting only to the second heater pattern.

本案的技術方案4涉及的發明根據技術方案3所述的並聯型加熱器,其特徵在於,第一及第二分割端子分別形成為大致半圓環狀,利用以在徑向上延長的方式設置在它們之間的間隙使第一及第二加熱器圖案絕緣。The invention according to Claim 4 of the present application is the parallel heater according to Claim 3, wherein the first and second divided terminals are each formed in a substantially semicircular shape, and are provided on them so as to extend in the radial direction. The gap therebetween insulates the first and second heater patterns.

本案的技術方案5涉及的發明根據技術方案1或2所述的並聯型加熱器,其特徵在於,在一對端子間並聯地形成有第一至第四加熱器圖案,各端子分割成僅與第一加熱器圖案導通的第一分割端子、僅與第二加熱器圖案導通的第二分割端子、僅與第三加熱器圖案導通的第三分割端子、及僅與第四加熱器圖案導通的第四分割端子。The invention according to claim 5 of the present application is the parallel heater according to claim 1 or 2, wherein first to fourth heater patterns are formed in parallel between a pair of terminals, and each terminal is divided into The first divided terminal conducting to the first heater pattern, the second divided terminal conducting only to the second heater pattern, the third divided terminal conducting only to the third heater pattern, and the conducting terminal only to the fourth heater pattern. Fourth split terminal.

本案的技術方案6涉及的發明根據技術方案5所述的並聯型加熱器,其特徵在於,第一至第四分割端子分別形成為大致四分之一圓環狀,利用以在徑向及周向上延長的方式設置在它們之間的間隙使第一至第四加熱器圖案絕緣。The invention according to Claim 6 of the present application is the parallel heater according to Claim 5, wherein the first to fourth split terminals are each formed in a roughly quarter-annular shape, and are used to radially and circumferentially The gap provided between them in an upwardly extending manner insulates the first to fourth heater patterns.

本案的技術方案7涉及的發明是一種權利要求1至6所述的並聯型加熱器的製造方法,其特徵在於,製作在一對端子間並聯地形成有多個加熱器圖案的加熱器主體,在對各端子安裝供電螺栓前的狀態下,對形成於一個端子的一個分割端子與另一個端子的一個分割端子之間的多個虛擬串聯加熱器圖案進行電阻調整後,通過對各端子安裝供電螺栓而使多個虛擬串聯加熱器圖案之間導通,從而形成並聯電路。 (發明效果)The invention according to claim 7 of the present application is a method of manufacturing a parallel heater according to claims 1 to 6, characterized in that a heater body having a plurality of heater patterns formed in parallel between a pair of terminals is produced, After performing resistance adjustment on a plurality of virtual series heater patterns formed between one split terminal of one terminal and one split terminal of the other terminal in the state before attaching power supply bolts to each terminal, by attaching power supply bolts to each terminal The bolts are used to conduct conduction between a plurality of virtual serial heater patterns, thereby forming a parallel circuit. (invention effect)

根據本發明,在未對端子安裝供電螺栓的狀態下,在一個端子的一個分割端子與另一個端子的一個分割端子之間形成有多個虛擬串聯加熱器圖案。因此,能夠對該虛擬串聯加熱器圖案以與現有的串聯型加熱器相同的方式比較容易地進行電阻調整。其後,通過對端子安裝供電螺栓而使多個虛擬串聯加熱器圖案之間導通,形成並聯電路,因此,完成品成為與現有的並聯型加熱器相同的結構。由此,能夠穩定、高效地提供個體差異小的產品。According to the present invention, a plurality of dummy serial heater patterns are formed between one divided terminal of one terminal and one divided terminal of the other terminal in a state where the power supply bolt is not attached to the terminal. Therefore, the resistance adjustment of the dummy serial heater pattern can be relatively easily performed in the same manner as in the conventional serial heater. Thereafter, a plurality of dummy series heater patterns are electrically connected to each other by attaching power supply bolts to the terminals to form a parallel circuit, so that the finished product has the same structure as a conventional parallel heater. Accordingly, it is possible to stably and efficiently provide products with little individual variation.

以下列舉實施例對本發明進行詳述。The following examples are given to describe the present invention in detail.

(實施例1)(Example 1)

圖1及圖2示出本發明的一個實施方式(實施例1)涉及的並聯型加熱器30。在該加熱器30中,對稱形狀的加熱器圖案31、32並聯地形成於端子A、B間。1 and 2 show a parallel heater 30 according to one embodiment (Example 1) of the present invention. In this heater 30 , symmetrically shaped heater patterns 31 and 32 are formed between the terminals A and B in parallel.

該加熱器30具有由加熱器底座33、加熱器元件34、及外覆層35形成3層層疊結構的加熱器主體36,上述加熱器底座33至少其正背面由PBN(熱分解性氮化硼,包括添加了微量的碳的氮化硼)等絕緣材料形成為圓板狀;上述加熱器元件34構成加熱器圖案31、32(用點劃線表示中心路徑),由PG(熱解性石墨)等導電材料構成;上述外覆層35由PBN等絕緣材料構成。加熱器主體36是通過如下方式製造的:按照常規方法,在加熱器底座33上蒸鍍加熱器元件34,去除成為加熱器圖案31、32的部分以外的部分,從而加工出加熱器圖案31、32,進而在其上形成外覆層35後,去除端子部的外覆層35而使加熱器元件34露出,形成為端子A、B。另外,外覆層35在圖2(b)中示出,但在圖1及圖2(a)中省略了圖示。This heater 30 has a heater main body 36 with a three-layer laminated structure formed of a heater base 33, a heater element 34, and an outer coating 35. At least the front and back of the heater base 33 are made of PBN (pyrolytic boron nitride) , including boron nitride with a small amount of carbon added) and other insulating materials are formed into a disk shape; the above-mentioned heater element 34 constitutes heater patterns 31, 32 (the central path is indicated by a dotted line), and is made of PG (pyrolytic graphite ) and other conductive materials; the outer covering layer 35 is made of insulating materials such as PBN. The heater main body 36 is manufactured by vapor-depositing the heater element 34 on the heater base 33 according to a conventional method, and removing the parts other than the heater patterns 31, 32 to process the heater patterns 31, 32. 32, and after forming the overcoat layer 35 thereon, the overcoat layer 35 of the terminal part is removed to expose the heater element 34, and terminals A and B are formed. In addition, although the cover layer 35 is shown in FIG. 2( b ), illustration is omitted in FIGS. 1 and 2( a ).

各端子A、B是作為大致半圓環狀地分割成兩部分所得的分割端子部37、38而形成的,構成為具有:供電螺栓40,其貫穿插入到貫通加熱器底座33的螺栓孔39;螺母41,其夾著加熱器主體36螺合到供電螺栓40;以及墊片42、43。分割端子部37僅與加熱器圖案31導通,分割端子部38僅與加熱器圖案32導通,分割端子部37、38被在徑向上延長的間隙44斷開而絕緣,但通過安裝供電螺栓40,供電螺栓40的頭部40a夾著墊片42與分割端子部37、38兩者接觸,因此加熱器圖案31、32導通而形成並聯型加熱器30。供電螺栓40及墊片42由PG等導電性材料形成。墊片43可以是導電性材料,也可以是絕緣性材料。Each of the terminals A and B is formed as divided terminal portions 37 and 38 obtained by dividing into two parts in a substantially semicircular shape, and is configured to have: a power supply bolt 40 inserted into a bolt hole 39 penetrating through the heater base 33; A nut 41 screwed to the power supply bolt 40 sandwiching the heater main body 36 ; and washers 42 , 43 . The split terminal part 37 is only connected to the heater pattern 31, and the split terminal part 38 is only connected to the heater pattern 32. The split terminal parts 37 and 38 are separated and insulated by the gap 44 extended in the radial direction, but by installing the power supply bolt 40, Since the head portion 40 a of the power supply bolt 40 is in contact with both the divided terminal portions 37 and 38 with the washer 42 interposed therebetween, the heater patterns 31 and 32 are electrically connected to form the parallel heater 30 . The power supply bolt 40 and the washer 42 are formed of a conductive material such as PG. The spacer 43 may be a conductive material or an insulating material.

圖3及圖4示出從如上述那樣構成的並聯型加熱器30去除了供電螺栓40的狀態(換句話說,是在加熱器30的製造過程中製作加熱器主體36後且安裝供電螺栓40前的狀態)。如上文所述,在該狀態下,分割端子部37與分割端子部38因間隙44而絕緣,因此加熱器圖案31形成於端子A、B的分割端子部37、37之間,加熱器圖案32形成於端子A、B的分割端子部38、38之間,分別成為串聯的加熱器路徑45、46。因此,在該狀態下,與上文所述的串聯型加熱器10(圖7)的情況同樣地,能夠容易進行電阻調整。3 and 4 show a state in which the power supply bolt 40 is removed from the parallel heater 30 configured as described above (in other words, after the heater main body 36 is produced and the power supply bolt 40 is installed in the manufacturing process of the heater 30 previous state). As described above, in this state, the split terminal portion 37 and the split terminal portion 38 are insulated by the gap 44, so the heater pattern 31 is formed between the split terminal portions 37, 37 of the terminals A, B, and the heater pattern 32 Between the divided terminal parts 38 and 38 formed between the terminals A and B, they form heater paths 45 and 46 in series, respectively. Therefore, in this state, resistance adjustment can be easily performed as in the case of the series heater 10 ( FIG. 7 ) described above.

參照圖5,對與上文所述的現有的並聯型加熱器20(圖8)同樣地在加熱器圖案31、32中設置電阻測定點P21~P24來進行電阻調整的情況進行說明。在該例中,將加熱器30的設計電阻值設為1.61 Ω(路徑45、46的電阻值均設為3.22 Ω),應進行調整以使端子A與測定點P1之間的區間電阻值r21=1.26 Ω、測定點P21、P22間的區間電阻值r22=1.19 Ω、測定點P22與端子B之間的區間電阻值r23=0.77 Ω、端子B與測定點P23之間的區間電阻值r24=1.26 Ω、測定點P23、P24間的區間電阻值r25=1.19 Ω、測定點P24與端子A之間的區間電阻值r25=0.77 Ω(各區間電阻值r21~r25是調整後的基準值)。Referring to FIG. 5 , a case where resistance adjustment is performed by providing resistance measurement points P21 to P24 in heater patterns 31 and 32 similarly to the conventional parallel heater 20 ( FIG. 8 ) described above will be described. In this example, the design resistance value of the heater 30 is set to 1.61 Ω (the resistance values of paths 45 and 46 are both set to 3.22 Ω), and it should be adjusted so that the resistance value of the section between terminal A and measurement point P1 is r21 =1.26 Ω, the interval resistance value between measuring points P21 and P22 r22=1.19 Ω, the interval resistance value between measuring point P22 and terminal B r23=0.77 Ω, the interval resistance value between terminal B and measuring point P23 r24= 1.26 Ω, the interval resistance value r25 between measuring points P23 and P24=1.19 Ω, the interval resistance value r25 between measuring point P24 and terminal A=0.77 Ω (each interval resistance value r21~r25 is the adjusted reference value).

在沒有安裝供電螺栓40的狀態下,路徑45是從端子A至端子B的串聯路徑,因此,以與參照圖9對串聯型加熱器10(圖7)進行說明的電阻調整相同的方式,在端子A與各測定點P21、P22及端子B之間測定電阻值,以它們符合上述基準值的方式依次進行調整即可,對路徑46也同樣地進行該操作即可,所以能夠比較容易地進行電阻調整。具體來說,可以先將加熱器圖案31、32的加熱器元件34以比設計電阻值低一些的方式形成得厚一些,並根據在各測定點測定的電阻值切削該區間的加熱器元件34來調整電阻。In the state where the power supply bolt 40 is not installed, the path 45 is a series path from the terminal A to the terminal B, therefore, in the same manner as the resistance adjustment described for the series heater 10 ( FIG. 7 ) with reference to FIG. Measure the resistance value between terminal A and each measurement point P21, P22, and terminal B, and adjust them sequentially so that they conform to the above-mentioned reference value. The same operation can be performed for path 46, so it can be performed relatively easily. Resistor adjustment. Specifically, the heater elements 34 of the heater patterns 31 and 32 can be formed thicker so that the resistance value is lower than the designed resistance value, and the heater elements 34 in the area can be cut according to the resistance value measured at each measurement point. to adjust the resistance.

像這樣,通過虛擬串聯路徑45、46來進行電阻調整後,如果在端子A、B安裝供電螺栓40、螺母41及墊片42、43,則如上文所述,供電螺栓40的頭部40a夾著墊片42與分割端子部37、38兩者接觸,因此加熱器圖案31、32導通而成為並聯路徑,製造出並聯型加熱器30。After performing resistance adjustment through the virtual series paths 45 and 46 in this way, if the power supply bolt 40, the nut 41 and the washers 42 and 43 are installed on the terminals A and B, as described above, the head 40a of the power supply bolt 40 clamps Since the pad 42 is in contact with both the divided terminal portions 37 and 38 , the heater patterns 31 and 32 are electrically connected to form a parallel path, and the parallel heater 30 is manufactured.

(實施例2)(Example 2)

以上所說明的實施例1的並聯型加熱器30中,在一對端子A、B間並聯地設置有2個加熱器圖案31、32,因此與此對應地具有利用徑向的間隙44將各端子A、B分割成兩部分即分割端子部37、38的結構,但在大型加熱器等中需要更精密的溫度控制的情況下,存在在一對端子A、B間並聯地形成多個、例如4個加熱器圖案的情況。In the parallel heater 30 of the first embodiment described above, since the two heater patterns 31 and 32 are provided in parallel between the pair of terminals A and B, correspondingly, each of the heater patterns 31 and 32 is connected by the gap 44 in the radial direction. The terminal A, B is divided into two parts, that is, the structure of the divided terminal part 37, 38. However, when more precise temperature control is required in a large heater, etc., there is a case where a pair of terminals A and B are formed in parallel. For example the case of 4 heater patterns.

這種情況的一例如圖6所示。即,該並聯型加熱器50在端子A、B間形成有4個加熱器圖案51~54,端子A、B分割成四部分即分割端子部55~58。加熱器圖案51(用點劃線表示中心路徑)形成於端子A、B的分割端子部55、55之間,加熱器圖案52(用虛線表示中心路徑)形成於端子A、B的分割端子部56、56之間,加熱器圖案53(用點劃線表示中心路徑)形成於端子A、B的分割端子部57、57之間,加熱器圖案54(用虛線表示中心路徑)形成於端子A、B的分割端子部58、58之間。這些分割端子部55~58借助沿徑向及周向延長的間隙59而斷開,分別形成為大致四分之一圓環狀。An example of this situation is shown in FIG. 6 . That is, in the parallel heater 50 , four heater patterns 51 to 54 are formed between the terminals A and B, and the terminals A and B are divided into four divided terminal portions 55 to 58 . A heater pattern 51 (the central path is indicated by a dotted line) is formed between the divided terminal portions 55, 55 of the terminals A and B, and a heater pattern 52 (the central path is indicated by a dotted line) is formed on the divided terminal portions of the terminals A and B. Between 56 and 56, a heater pattern 53 (the central path is indicated by a dotted line) is formed between the divided terminal parts 57 and 57 of the terminals A and B, and a heater pattern 54 (the central path is indicated by a dotted line) is formed on the terminal A , Between the divided terminal parts 58 and 58 of B. These divided terminal portions 55 to 58 are separated by gaps 59 extending in the radial direction and the circumferential direction, and are each formed in a substantially quarter-circular shape.

以上,對本發明列舉實施例詳細地進行了說明,但本發明並不限定於這些,可以在由權利要求書所劃定的發明的範圍內進行各種各樣的變形來實施。例如,在實施例1中,在安裝供電螺栓40時借助墊片42使加熱器圖案31、32(路徑45、46)之間導通,但也可以省略墊片42,使供電螺栓頭部40a的背面直接與分割端子部37、38接觸而導通。另外,在一個加熱器中設置有多對端子的情況下,只要使各對端子根據在端子間並聯的多個加熱器圖案數量分割成兩部分(實施例1)或四部分(實施例2)等,以未安裝供電螺栓時形成虛擬串聯圖案的方式構成即可。As mentioned above, although the Example of this invention was demonstrated in detail, this invention is not limited to these, Various modifications can be implemented within the scope of the invention defined by a claim. For example, in Embodiment 1, the heater patterns 31, 32 (paths 45, 46) are electrically connected through the spacer 42 when the power supply bolt 40 is installed, but the spacer 42 may be omitted so that the power supply bolt head 40a The rear surface is directly in contact with the divided terminal portions 37 and 38 to conduct conduction. In addition, when multiple pairs of terminals are provided in one heater, it is only necessary to divide each pair of terminals into two parts (Example 1) or four parts (Example 2) according to the number of heater patterns connected in parallel between the terminals. etc., it is sufficient to form a virtual serial pattern when the power supply bolt is not installed.

10‧‧‧串聯型加熱器(現有技術)20‧‧‧並聯型加熱器(現有技術)30‧‧‧並聯型加熱器(本發明實施例)31、32‧‧‧並聯加熱器圖案33‧‧‧加熱器底座34‧‧‧加熱器元件35‧‧‧外覆層36‧‧‧加熱器主體37、38‧‧‧分割端子部(分割成兩部分)39‧‧‧螺栓孔40‧‧‧供電螺栓41‧‧‧螺母42‧‧‧墊片43‧‧‧墊片44‧‧‧間隙45、46‧‧‧路徑50‧‧‧並聯型加熱器(本發明實施例)51~54‧‧‧並聯加熱器圖案55~58‧‧‧分割端子部(分割成四部分)59‧‧‧間隙10‧‧‧serial heater (prior art) 20‧‧‧parallel heater (prior art) 30‧‧‧parallel heater (embodiment of the present invention) 31, 32‧‧‧parallel heater pattern 33‧ ‧‧Heater base 34‧‧‧Heater element 35‧‧‧Cover layer 36‧‧‧Heater body 37, 38‧‧‧Split terminal part (divided into two parts) 39‧‧‧Bolt hole 40‧‧ ‧Power supply bolt 41‧‧‧Nut 42‧‧‧Washer 43‧‧‧Washer 44‧‧‧Gap 45, 46‧‧‧Path 50‧‧‧Parallel heater (embodiment of the invention) 51~54‧ ‧‧Parallel heater pattern 55~58‧‧‧Split terminal part (divided into four parts) 59‧‧‧Gap

圖1是本發明的一個實施方式(實施例1)涉及的並聯型加熱器(完成狀態或者安裝有供電螺栓的狀態)的整體俯視圖。FIG. 1 is an overall plan view of a parallel heater (in a completed state or a state where a power supply bolt is attached) according to one embodiment (Example 1) of the present invention.

圖2是圖1的端子部放大俯視圖(a)及由圖(a)中的I-I剖切線所得到的剖視圖(b)。FIG. 2 is an enlarged plan view (a) of the terminal portion in FIG. 1 and a cross-sectional view (b) obtained by cutting line I-I in FIG. 1 .

圖3是去除了供電螺栓的狀態的整體俯視圖。Fig. 3 is an overall plan view with a power supply bolt removed.

圖4是圖3的端子部放大俯視圖(a)及由圖(a)中的II-II剖切線所得到的剖視圖(b)。FIG. 4 is an enlarged plan view (a) of the terminal part in FIG. 3 and a cross-sectional view (b) obtained by cutting line II-II in FIG. 3 .

圖5是在圖3及圖4所示的狀態下進行電阻調整的說明圖。FIG. 5 is an explanatory view of resistance adjustment in the state shown in FIGS. 3 and 4 .

圖6是示出在本發明的另一實施方式(實施例2)涉及的並聯型加熱器中與圖3同樣地去除了供電螺栓的狀態的整體俯視圖。FIG. 6 is an overall plan view showing a parallel heater according to another embodiment (Example 2) of the present invention in which a power supply bolt is removed in the same manner as in FIG. 3 .

圖7是現有技術涉及的串聯型加熱器的整體俯視圖。Fig. 7 is an overall plan view of a conventional series heater.

圖8是現有技術涉及的並聯型加熱器的整體俯視圖。Fig. 8 is an overall plan view of a conventional parallel heater.

圖9是對圖7的串聯型加熱器的加熱器圖案設定了電阻測定點的整體俯視圖(a)及其電阻調整說明圖。9 is an overall plan view ( a ) in which resistance measurement points are set for the heater pattern of the serial heater of FIG. 7 , and an explanatory diagram of resistance adjustment thereof.

圖10是對圖8的並聯型加熱器的加熱器圖案設定了電阻測定點的整體俯視圖(a)及其電阻調整說明圖(b)。10 is an overall plan view (a) in which resistance measurement points are set for the heater pattern of the parallel heater in FIG. 8 , and an explanatory diagram (b) of resistance adjustment.

圖11是以具體例示出難以對圖8的並聯型加熱器進行電阻調整的電阻調整說明圖。FIG. 11 is an explanatory diagram illustrating resistance adjustment that is difficult to perform resistance adjustment for the parallel heater shown in FIG. 8 , as a concrete example.

30‧‧‧加熱器 30‧‧‧heater

31,32‧‧‧加熱器圖案 31,32‧‧‧Heater pattern

33‧‧‧加熱器底座 33‧‧‧Heater base

34‧‧‧加熱器元件 34‧‧‧heater element

35‧‧‧外覆層 35‧‧‧Cladding layer

36‧‧‧加熱器主體 36‧‧‧Heater body

37,38‧‧‧分割端子 37,38‧‧‧Split terminal

40‧‧‧供電螺栓 40‧‧‧Power supply bolt

40a‧‧‧頭部 40a‧‧‧Head

41‧‧‧螺母 41‧‧‧Nut

42,43‧‧‧墊片 42,43‧‧‧gasket

45,46‧‧‧虛擬串聯路徑 45,46‧‧‧virtual serial path

50‧‧‧供電螺栓 50‧‧‧Power supply bolts

Claims (7)

一種並聯型加熱器,該並聯型加熱器在分別要安裝供電螺栓的一對端子之間並聯地形成有複數個加熱器圖案,前述一對端子的各者根據前述複數個加熱器圖案的數量以不相互接觸的方式分割成複數個,此等複數個分割端子彼此通過前述供電螺栓而導通,在未安裝前述供電螺栓的狀態下,在前述一對端子中的一方的一個分割端子與另一方的一個分割端子之間形成有複數個虛擬串聯加熱器圖案,通過安裝前述供電螺栓,前述複數個虛擬串聯加熱器圖案之間導通而形成並聯電路。 A parallel heater in which a plurality of heater patterns are formed in parallel between a pair of terminals to which power supply bolts are respectively mounted, and each of the pair of terminals is equal to or equal to the number of the plurality of heater patterns. The split terminals are divided into plural ones without contacting each other, and these split terminals are connected to each other through the aforementioned power supply bolts. In the state where the aforementioned power supply bolts are not installed, one split terminal of one of the aforementioned pair of terminals is connected to the other. A plurality of dummy serial heater patterns are formed between one divided terminal, and by installing the aforementioned power supply bolts, the aforementioned plurality of dummy serial heater patterns are conducted to form a parallel circuit. 如請求項1的並聯型加熱器,其中,前述供電螺栓的頭部直接或借助由導電性材料構成的墊片與形成前述複數個加熱器圖案的加熱器元件接觸。 The parallel heater according to claim 1, wherein the head of the power supply bolt is in contact with the heater elements forming the plurality of heater patterns directly or via a washer made of a conductive material. 如請求項1或2的並聯型加熱器,其中,在前述一對端子之間並聯地形成有第一及第二加熱器圖案,前述一對端子的各者分割成僅與前述第一加熱器圖案導通的第一分割端子和僅與前述第二加熱器圖案導通的第二分割端子。 The parallel heater according to claim 1 or 2, wherein first and second heater patterns are formed in parallel between the pair of terminals, and each of the pair of terminals is divided into only the first heater. The first split terminal that is pattern-conducted and the second split terminal that is pattern-conducted only to the aforementioned second heater. 如請求項3的並聯型加熱器,其中,前述第一及前述第二分割端子分別形成為大致半圓環狀,利用在其等之間以在徑向上延長的方式設置的間隙使前述第一及前述第二加熱器圖案絕緣。 The parallel heater according to claim 3, wherein each of the first and second divided terminals is formed in a substantially semicircular shape, and the first and second divided terminals are formed with a gap extending in the radial direction between them. The aforementioned second heater pattern is insulated. 如請求項1或2的並聯型加熱器,其中,在前述一對端子之間並聯地形成有第一至第四加熱器圖案, 前述一對端子的各者分割成僅與前述第一加熱器圖案導通的第一分割端子、僅與前述第二加熱器圖案導通的第二分割端子、僅與前述第三加熱器圖案導通的第三分割端子、以及僅與前述第四加熱器圖案導通的第四分割端子。 The parallel type heater as claimed in claim 1 or 2, wherein first to fourth heater patterns are formed in parallel between the aforementioned pair of terminals, Each of the pair of terminals is divided into a first divided terminal conducting only to the first heater pattern, a second divided terminal conducting only to the second heater pattern, and a second divided terminal conducting only to the third heater pattern. There are three split terminals, and a fourth split terminal that conducts only to the fourth heater pattern. 如請求項5的並聯型加熱器,其中,前述第一至第四分割端子分別形成為大致四分之一圓環狀,利用在其等之間以在徑向及周向上延長的方式設置的間隙使前述第一至第四加熱器圖案絕緣。 The parallel heater according to claim 5, wherein each of the first to fourth split terminals is formed in a roughly quarter-annular shape, and the radial and circumferential directions are extended between them. The gap insulates the aforementioned first to fourth heater patterns. 一種並聯型加熱器的製造方法,其為如請求項1至6中任一項的並聯型加熱器的製造方法,其中,製作在一對端子之間並聯地形成有複數個加熱器圖案的加熱器主體,在對前述一對端子的各者安裝供電螺栓前的狀態下,對形成於前述一對端子中的一方的一個分割端子與另一方的一個分割端子之間的複數個虛擬串聯加熱器圖案進行電阻調整後,通過對前述一對端子的各者安裝前述供電螺栓而使前述複數個虛擬串聯加熱器圖案之間導通,從而形成並聯電路。A method of manufacturing a parallel heater, which is the method of manufacturing a parallel heater according to any one of Claims 1 to 6, wherein a heater having a plurality of heater patterns formed in parallel between a pair of terminals is produced In the state of the main body of the device before the power supply bolts are attached to each of the aforementioned pair of terminals, a plurality of virtual series heaters formed between one split terminal of one of the aforementioned pair of terminals and one split terminal of the other are formed. After the resistance of the patterns is adjusted, the plurality of dummy series heater patterns are electrically connected by attaching the power supply bolts to each of the pair of terminals to form a parallel circuit.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002043441A1 (en) 2000-11-24 2002-05-30 Ibiden Co., Ltd. Ceramic heater, and production method for ceramic heater
US20040188413A1 (en) * 2003-03-27 2004-09-30 Sumitomo Electric Industries, Ltd. Ceramic Susceptor and Semiconductor or Liquid-Crystal Manufacturing Apparatus in Which the Susceptor Is Installed
US20050014031A1 (en) * 2000-02-24 2005-01-20 Ibiden Co., Ltd. Aluminum nitride sintered body, ceramic substrate, ceramic heater and electrostatic chuck
US20080029195A1 (en) * 2006-07-05 2008-02-07 Zhong-Hao Lu Electrode Pattern For Resistance Heating Element and Wafer processing Apparatus
US9351344B2 (en) * 2013-03-13 2016-05-24 Shin-Etsu Chemical Co., Ltd. Ceramic heater

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09102665A (en) * 1995-10-04 1997-04-15 Omron Corp Circuit board
JPH10233436A (en) * 1997-02-18 1998-09-02 Toto Ltd Electrostatic chuck
JPH11317284A (en) * 1998-04-30 1999-11-16 Komatsu Ltd Temperature control device
JPH11354260A (en) * 1998-06-11 1999-12-24 Shin Etsu Chem Co Ltd Multi-layer ceramic heater
JP2004087476A (en) * 2002-06-26 2004-03-18 Okazaki Mfg Co Ltd Structure of hot plate for heating wafer, and method for fixing electrode of hot plate
US7361865B2 (en) * 2003-08-27 2008-04-22 Kyocera Corporation Heater for heating a wafer and method for fabricating the same
JP4570345B2 (en) * 2003-09-18 2010-10-27 株式会社三幸 Heat treatment furnace
US7280370B2 (en) * 2005-08-26 2007-10-09 Delphi Technologies, Inc. Electronic package and circuit board having segmented contact pads
JP2013004247A (en) 2011-06-15 2013-01-07 Shin Etsu Chem Co Ltd Ceramic heater
US10679873B2 (en) 2016-09-30 2020-06-09 Ngk Spark Plug Co., Ltd. Ceramic heater

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050014031A1 (en) * 2000-02-24 2005-01-20 Ibiden Co., Ltd. Aluminum nitride sintered body, ceramic substrate, ceramic heater and electrostatic chuck
WO2002043441A1 (en) 2000-11-24 2002-05-30 Ibiden Co., Ltd. Ceramic heater, and production method for ceramic heater
US20040188413A1 (en) * 2003-03-27 2004-09-30 Sumitomo Electric Industries, Ltd. Ceramic Susceptor and Semiconductor or Liquid-Crystal Manufacturing Apparatus in Which the Susceptor Is Installed
US20080029195A1 (en) * 2006-07-05 2008-02-07 Zhong-Hao Lu Electrode Pattern For Resistance Heating Element and Wafer processing Apparatus
US9351344B2 (en) * 2013-03-13 2016-05-24 Shin-Etsu Chemical Co., Ltd. Ceramic heater

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