TWI781159B - 處理室中工件上之材料沉積防止及其相關設備 - Google Patents
處理室中工件上之材料沉積防止及其相關設備 Download PDFInfo
- Publication number
- TWI781159B TWI781159B TW107111035A TW107111035A TWI781159B TW I781159 B TWI781159 B TW I781159B TW 107111035 A TW107111035 A TW 107111035A TW 107111035 A TW107111035 A TW 107111035A TW I781159 B TWI781159 B TW I781159B
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- Prior art keywords
- workpiece
- ring
- support
- plasma
- gathering
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims description 42
- 230000008021 deposition Effects 0.000 title description 11
- 238000000034 method Methods 0.000 title description 8
- 230000008569 process Effects 0.000 title description 7
- 230000002265 prevention Effects 0.000 title description 2
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims 1
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 70
- 239000007789 gas Substances 0.000 description 16
- 230000001939 inductive effect Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762479778P | 2017-03-31 | 2017-03-31 | |
| US62/479,778 | 2017-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201903820A TW201903820A (zh) | 2019-01-16 |
| TWI781159B true TWI781159B (zh) | 2022-10-21 |
Family
ID=63669762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107111035A TWI781159B (zh) | 2017-03-31 | 2018-03-29 | 處理室中工件上之材料沉積防止及其相關設備 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11251026B2 (fr) |
| JP (1) | JP6926225B2 (fr) |
| KR (1) | KR102205922B1 (fr) |
| CN (1) | CN110546733B (fr) |
| TW (1) | TWI781159B (fr) |
| WO (1) | WO2018183245A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10655224B2 (en) * | 2016-12-20 | 2020-05-19 | Lam Research Corporation | Conical wafer centering and holding device for semiconductor processing |
| US11189464B2 (en) * | 2019-07-17 | 2021-11-30 | Beijing E-town Semiconductor Technology Co., Ltd. | Variable mode plasma chamber utilizing tunable plasma potential |
| KR102827247B1 (ko) * | 2019-07-29 | 2025-06-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 프로세싱 챔버 및 이를 세정하기 위한 방법들 |
| KR102880180B1 (ko) * | 2020-07-07 | 2025-11-03 | 도쿄엘렉트론가부시키가이샤 | 엣지 링 및 에칭 장치 |
| JP7605695B2 (ja) * | 2020-07-07 | 2024-12-24 | 東京エレクトロン株式会社 | エッジリング及びエッチング装置 |
| US20230066418A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focus ring for a plasma-based semiconductor processing tool |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200416801A (en) * | 2003-01-07 | 2004-09-01 | Tokyo Electron Ltd | Plasma processing apparatus and focus ring |
| US20050155718A1 (en) * | 2004-01-20 | 2005-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step edge insert ring for etch chamber |
| US20060043067A1 (en) * | 2004-08-26 | 2006-03-02 | Lam Research Corporation | Yttria insulator ring for use inside a plasma chamber |
| TW200715402A (en) * | 2005-08-08 | 2007-04-16 | Lam Res Corp | Edge ring assembly with dielectric spacer ring |
| JP2011014943A (ja) * | 1999-06-30 | 2011-01-20 | Lam Research Corp | エッチング速度の均一性を改良する技術 |
| US20110126984A1 (en) * | 2009-12-01 | 2011-06-02 | Lam Research Corporation | Edge ring assembly for plasma etching chambers |
| TW201447965A (zh) * | 2013-02-18 | 2014-12-16 | Lam Res Corp | 用於電漿晶圓處理之混合邊緣環 |
| TW201535466A (zh) * | 2013-12-20 | 2015-09-16 | Lam Res Corp | 電漿處理室中具有能延伸彈性密封件的使用壽命之適當尺寸的邊緣環 |
| CN106469637A (zh) * | 2015-08-18 | 2017-03-01 | 朗姆研究公司 | 用于改善在晶片极端边缘的特征轮廓倾斜的边缘环组件 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6022809A (en) | 1998-12-03 | 2000-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite shadow ring for an etch chamber and method of using |
| KR100397891B1 (ko) * | 2001-07-25 | 2003-09-19 | 삼성전자주식회사 | 반도체 장치 식각설비의 척 조립체 |
| US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
| US7381293B2 (en) | 2003-01-09 | 2008-06-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Convex insert ring for etch chamber |
| JP4991286B2 (ja) | 2003-03-21 | 2012-08-01 | 東京エレクトロン株式会社 | 処理中の基板裏面堆積を減らす方法および装置。 |
| TWI488236B (zh) * | 2003-09-05 | 2015-06-11 | Tokyo Electron Ltd | Focusing ring and plasma processing device |
| US7988814B2 (en) * | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
| JP2007250967A (ja) | 2006-03-17 | 2007-09-27 | Tokyo Electron Ltd | プラズマ処理装置および方法とフォーカスリング |
| KR20080029569A (ko) | 2006-09-29 | 2008-04-03 | 주식회사 하이닉스반도체 | 식각프로파일 휘어짐 방지를 위한 플라즈마 식각 장치 |
| JP5317424B2 (ja) * | 2007-03-28 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2010045200A (ja) | 2008-08-13 | 2010-02-25 | Tokyo Electron Ltd | フォーカスリング、プラズマ処理装置及びプラズマ処理方法 |
| JP5705133B2 (ja) | 2009-02-04 | 2015-04-22 | マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． | 静電チャックシステムおよび基板表面に亘って温度プロファイルを半径方向に調整するための方法 |
| JP5357639B2 (ja) * | 2009-06-24 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US8485128B2 (en) * | 2010-06-30 | 2013-07-16 | Lam Research Corporation | Movable ground ring for a plasma processing chamber |
| US9653264B2 (en) | 2010-12-17 | 2017-05-16 | Mattson Technology, Inc. | Inductively coupled plasma source for plasma processing |
| US20120216955A1 (en) * | 2011-02-25 | 2012-08-30 | Toshiba Materials Co., Ltd. | Plasma processing apparatus |
| US8801947B2 (en) | 2012-05-30 | 2014-08-12 | Mattson Technology, Inc. | Methods for forming microlenses |
| CN104715997A (zh) | 2015-03-30 | 2015-06-17 | 上海华力微电子有限公司 | 聚焦环及具有该聚焦环的等离子体处理装置 |
| US20160289827A1 (en) * | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Plasma processing systems and structures having sloped confinement rings |
| WO2017131927A1 (fr) * | 2016-01-26 | 2017-08-03 | Applied Materials, Inc. | Solution de levage d'anneau de bordure de plaquette |
| US10910195B2 (en) * | 2017-01-05 | 2021-02-02 | Lam Research Corporation | Substrate support with improved process uniformity |
-
2018
- 2018-03-27 CN CN201880021289.1A patent/CN110546733B/zh active Active
- 2018-03-27 US US15/936,764 patent/US11251026B2/en active Active
- 2018-03-27 WO PCT/US2018/024445 patent/WO2018183245A1/fr not_active Ceased
- 2018-03-27 JP JP2019553315A patent/JP6926225B2/ja active Active
- 2018-03-27 KR KR1020197028012A patent/KR102205922B1/ko active Active
- 2018-03-29 TW TW107111035A patent/TWI781159B/zh active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011014943A (ja) * | 1999-06-30 | 2011-01-20 | Lam Research Corp | エッチング速度の均一性を改良する技術 |
| TW200416801A (en) * | 2003-01-07 | 2004-09-01 | Tokyo Electron Ltd | Plasma processing apparatus and focus ring |
| US20050155718A1 (en) * | 2004-01-20 | 2005-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step edge insert ring for etch chamber |
| US20060043067A1 (en) * | 2004-08-26 | 2006-03-02 | Lam Research Corporation | Yttria insulator ring for use inside a plasma chamber |
| TW200715402A (en) * | 2005-08-08 | 2007-04-16 | Lam Res Corp | Edge ring assembly with dielectric spacer ring |
| US20110126984A1 (en) * | 2009-12-01 | 2011-06-02 | Lam Research Corporation | Edge ring assembly for plasma etching chambers |
| TW201447965A (zh) * | 2013-02-18 | 2014-12-16 | Lam Res Corp | 用於電漿晶圓處理之混合邊緣環 |
| TW201535466A (zh) * | 2013-12-20 | 2015-09-16 | Lam Res Corp | 電漿處理室中具有能延伸彈性密封件的使用壽命之適當尺寸的邊緣環 |
| CN106469637A (zh) * | 2015-08-18 | 2017-03-01 | 朗姆研究公司 | 用于改善在晶片极端边缘的特征轮廓倾斜的边缘环组件 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190112188A (ko) | 2019-10-02 |
| US20180286640A1 (en) | 2018-10-04 |
| CN110546733A (zh) | 2019-12-06 |
| JP2020516072A (ja) | 2020-05-28 |
| TW201903820A (zh) | 2019-01-16 |
| KR102205922B1 (ko) | 2021-01-22 |
| US11251026B2 (en) | 2022-02-15 |
| CN110546733B (zh) | 2022-10-11 |
| WO2018183245A1 (fr) | 2018-10-04 |
| JP6926225B2 (ja) | 2021-08-25 |
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| Date | Code | Title | Description |
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| GD4A | Issue of patent certificate for granted invention patent |