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TWI780093B - Ring structures and systems for use in a plasma chamber - Google Patents

Ring structures and systems for use in a plasma chamber Download PDF

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Publication number
TWI780093B
TWI780093B TW106144102A TW106144102A TWI780093B TW I780093 B TWI780093 B TW I780093B TW 106144102 A TW106144102 A TW 106144102A TW 106144102 A TW106144102 A TW 106144102A TW I780093 B TWI780093 B TW I780093B
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Taiwan
Prior art keywords
ring
body portion
edge
vertically oriented
edge ring
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TW106144102A
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Chinese (zh)
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TW201929610A (en
Inventor
麥可 C 克拉吉
亞當 麥斯
艾力西 瑪瑞卡塔諾
約翰 霍藍德
志剛 陳
菲力克斯 柯札維奇
亞歷山大 馬堤育斯金
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美商蘭姆研究公司
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Priority to TW106144102A priority Critical patent/TWI780093B/en
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Abstract

Systems and methods for securing an edge ring to a support ring are described. The edge ring is secured to the support ring via multiple fasteners that are inserted into a bottom surface of the edge ring. The securing of the edge ring to the support ring provides stability of the edge ring during processing of a substrate within a plasma chamber. In addition, the securing of the edge ring to the support ring secures the edge ring to the plasma chamber because the support ring is secured to an insulator ring, which is connected to an insulator wall of the plasma chamber. Moreover, the support ring and the edge ring are pulled down vertically using one or more clasp mechanisms during the processing of the substrate and are pushed up vertically using the clasp mechanisms to remove the edge ring and the support ring from the plasma chamber.

Description

用於電漿腔室的環結構及系統Ring structures and systems for plasma chambers

本發明實施例係關於用於固定電漿腔室中的環之環、系統、方法、及結構。 Embodiments of the invention relate to rings, systems, methods, and structures for securing rings in plasma chambers.

電漿腔室係用以在晶圓上執行諸多製程。舉例而言,電漿腔室係用於清潔晶圓、在晶圓上沉積材料、或蝕刻晶圓。電漿腔室包含諸如各種環的諸多元件,其係用於處理晶圓的不同部分。 Plasma chambers are used to perform many processes on wafers. For example, plasma chambers are used to clean wafers, deposit materials on wafers, or etch wafers. The plasma chamber contains many elements, such as various rings, which are used to process different parts of the wafer.

本揭示內容中描述的實施例係於本文中提出。 The embodiments described in this disclosure are presented herein.

在所描述的實施例中,電漿腔室係設有邊緣環及支撐環。在一實施例中,邊緣環係耦接至設置在邊緣環下方的支撐環。該邊緣環係例如藉由附接至邊緣環之底側的複數螺釘耦接至支撐環。為了固定支撐環,複數下拉結構耦接至支撐環的底側,該複數下拉結構下拉以在處理期間使邊緣環保持固定。若邊緣環在處理期間係非正確地加以固定,則用以固定邊緣環的黏著劑並不足夠。僅有黏著劑並不足夠的一個原因係由於電漿腔室內的高溫循環,所以由支撐環與邊緣環之間形成的黏著膠體提供的黏著力降低。此外,有恆定力施加至膠體,因此膠體可能隨時間崩解。因此,期望即使在由膠體提供的黏著力降低及/或膠體崩 解時,邊緣環及支撐環在基板的處理期間仍保持在原位置。舉例而言,期望在基板的處理期間邊緣環相對於支撐環係固定的。否則,在基板的處理期間之邊緣環的任何位移都可能導致在基板上執行不期望的製程、或基板的某些不期望被處理之部分受到處理。在一實施例中,邊緣環的底表面具有用於接收多個緊固件的槽,例如螺釘孔,以在基板的處理期間將邊緣環連接至支撐環。此有助於防止邊緣環相對於支撐環運動。 In the described embodiment, the plasma chamber is provided with an edge ring and a support ring. In one embodiment, the edge ring is coupled to a support ring disposed below the edge ring. The edge ring is coupled to the support ring, for example by a plurality of screws attached to the bottom side of the edge ring. To secure the support ring, a plurality of pull down structures are coupled to the underside of the support ring, the pull down structures pulling down to hold the edge ring in place during handling. If the edge ring is not properly fixed during handling, the adhesive used to fix the edge ring is not sufficient. One reason why adhesive alone is not sufficient is that the adhesion provided by the adhesive colloid formed between the support ring and the edge ring is reduced due to the high temperature cycles within the plasma chamber. Furthermore, there is a constant force applied to the colloid, so the colloid may disintegrate over time. Therefore, it is expected that even when the adhesion provided by the colloid is reduced and/or the colloid collapses, the When detached, the edge ring and support ring remain in place during processing of the substrate. For example, it may be desirable for the edge ring to be fixed relative to the support ring during processing of the substrate. Otherwise, any displacement of the edge ring during processing of the substrate may result in undesired processes being performed on the substrate, or certain undesired portions of the substrate being processed. In one embodiment, the bottom surface of the edge ring has grooves for receiving a plurality of fasteners, such as screw holes, to connect the edge ring to the support ring during processing of the substrate. This helps prevent movement of the edge ring relative to the support ring.

在一實施例中,期望邊緣環具有一或更多彎曲的邊緣,以在電漿形成於電漿腔室內時減少電弧放電(arcing)的可能性。 In one embodiment, it is desirable for the edge ring to have one or more curved edges to reduce the possibility of arcing when the plasma is formed within the plasma chamber.

在另一實施例中,期望設置蓋環以圍繞邊緣環。蓋環係進一步配置成具有一或更多彎曲的邊緣,以在電漿形成於電漿腔室內時減少電弧放電的可能性。此外,蓋環的寬度係選擇成使得沿該寬度的追踪距離有助於在蓋環之垂直定向的內表面處達成隔絕電壓(stand-off voltage)。舉例而言,若射頻(RF)電壓在蓋環內耗散的範圍從每千分之一英吋的蓋環約7伏特(V)(含)至10伏特的電壓,則在蓋環之垂直定向的內表面處達成預定之5000伏特(V)的隔絕電壓,該蓋環的寬度對應於追踪距離。追踪距離係隔絕電壓之倍數(諸如二或三)及蓋環之每單位長度(諸如千分之一英寸)內電壓耗散的比率。在一些實施例中,蓋環的寬度係由該比率提供的追踪距離。在另一實施例中,邊緣環與接地之間的表面長度(例如沿幾個階梯式表面)界定追踪距離。 In another embodiment, it may be desirable to provide a cover ring to surround the edge ring. The cover ring is further configured to have one or more curved edges to reduce the possibility of arcing when the plasma is formed within the plasma chamber. Furthermore, the width of the cover ring is selected such that the trace distance along the width helps to achieve a stand-off voltage at the vertically oriented inner surface of the cover ring. For example, if the radio frequency (RF) voltage dissipated in the cover ring ranges from about 7 volts (V) per thousandth of an inch of the cover ring (inclusive) to 10 volts, then vertical A predetermined isolation voltage of 5000 volts (V) is achieved at the oriented inner surface, and the width of the cover ring corresponds to the tracking distance. The trace distance is a multiple of the isolation voltage (such as two or three) and the ratio of the voltage dissipation per unit length of the cover ring (such as thousandths of an inch). In some embodiments, the width of the cover ring is the tracking distance provided by this ratio. In another embodiment, the length of the surface between the edge ring and ground (eg, along several stepped surfaces) defines the tracking distance.

在一實施例中,期望支撐環及邊緣環相對於位在支撐環下方的絕緣體環係固定的。否則,支撐環相對於絕緣體環的任何力矩皆使支撐環之頂部上的邊緣環運動。邊緣環的運動在基板的處理期間係不期望的。在基板的處理期間之支撐環的任何位移都可能導致在基板上執行不期望的製程、或基板的某些不期望被處理之部分受到處理。此外,為了支撐環或邊緣環或邊緣環和支撐環兩者的維修或更換,期望支撐環和邊緣環容易地被移除。 In one embodiment, it is desirable that the support ring and the edge ring are fixed relative to the insulator ring below the support ring. Otherwise, any moment of the support ring relative to the insulator ring moves the edge ring on top of the support ring. Movement of the edge ring is undesirable during processing of the substrate. Any displacement of the support ring during processing of the substrate may result in undesired processes being performed on the substrate, or portions of the substrate being processed that are not intended to be processed. Furthermore, it is desirable for the support ring and the edge ring to be easily removed for repair or replacement of the support ring or the edge ring or both.

在一些實施例中,描述一種用於電漿處理腔室的邊緣環。該邊緣環具有圍繞電漿處理腔室之基板支座的環形體。該環形體具有底側、頂側、內側、及外側。該邊緣環具有沿底側配置在環形體內的複數緊固件孔。各緊固件孔具有用於容納緊固件之螺紋的內表面,該緊固件用於將環形體附接至支撐環。該邊緣環更包含配置在環形體之內側的台階。該台階具有藉由呈角度的表面而與頂側之上表面分開的下表面。該邊緣環具有形成於頂側之上表面與外側之側表面的彎曲邊緣。 In some embodiments, an edge ring for a plasma processing chamber is described. The edge ring has an annular body surrounding the substrate support of the plasma processing chamber. The annular body has a bottom side, a top side, an inner side, and an outer side. The edge ring has a plurality of fastener holes disposed within the ring body along the bottom side. Each fastener hole has a threaded inner surface for receiving a fastener for attaching the annular body to the support ring. The edge ring further includes a step disposed inside the ring body. The step has a lower surface separated from the top surface by an angled surface. The edge ring has curved edges formed on the upper surface of the top side and the side surface of the outer side.

在幾個實施例中,描述一種用於電漿處理腔室的蓋環。該蓋環具有圍繞邊緣環且毗鄰接地環的環形體。該環形體具有上主體部分、中間主體部分、及下主體部分。該中間主體部分自上主體部分界定階梯式縮減部,使得中間主體部分具有第一環形寬度。該下主體部分自中間主體部分界定階梯式縮減部,使得下主體部分具有小於該第一環形寬度的第二環形寬度。 In several embodiments, a cover ring for a plasma processing chamber is described. The cover ring has an annular body surrounding the edge ring and adjacent to the ground ring. The annular body has an upper body portion, a middle body portion, and a lower body portion. The intermediate body portion defines a stepped reduction from the upper body portion such that the intermediate body portion has a first annular width. The lower body portion defines a stepped reduction from the intermediate body portion such that the lower body portion has a second annular width that is less than the first annular width.

在諸多實施例中,描述一種用於固定電漿腔室之邊緣環的系統。該系統包含邊緣環定向在其上方的支撐環。該系統更包含配置在邊緣環的底表面與支撐環的頂表面之間的膠體層。該系統亦包含配置成將邊緣環固定至支撐環的複數螺釘。複數螺釘的其中各者係附接至配置在邊緣環的底表面內且穿過該支撐環的螺釘孔。該系統亦包含連接至該支撐環的底表面之複數壓緊桿。該系統包含複數氣動活塞。該複數氣動活塞的其中各者係耦接至複數壓緊桿之個別者。 In various embodiments, a system for securing an edge ring of a plasma chamber is described. The system includes a support ring over which the edge ring is oriented. The system further includes a gel layer disposed between the bottom surface of the edge ring and the top surface of the support ring. The system also includes a plurality of screws configured to secure the edge ring to the support ring. Each of the plurality of screws is attached to a screw hole disposed within the bottom surface of the edge ring and through the support ring. The system also includes a plurality of compression rods attached to the bottom surface of the support ring. The system consists of a plurality of pneumatic pistons. Each of the plurality of pneumatic pistons is coupled to an individual one of the plurality of compression rods.

本文描述之系統及方法的一些優點包含提供具有一或更多非尖銳之彎曲邊緣的邊緣環。當電漿在電漿腔室內形成時,尖銳的邊緣(諸如具有90°角的邊緣)通常負責RF功率的電弧放電。一或更多彎曲的邊緣減少如此電弧放電的可能性。 Some advantages of the systems and methods described herein include providing edge rings with one or more non-sharp curved edges. When a plasma is formed within a plasma chamber, sharp edges, such as edges with a 90° angle, are often responsible for arcing of RF power. One or more curved edges reduce the likelihood of such arcing.

該系統及方法之進一步的優點包含使邊緣環設有諸如螺釘孔的一或更多槽,用於接收諸如螺釘的緊固件以供將邊緣環耦接至支撐環。即使當邊緣環與支撐環間之膠體提供的黏著力降低或膠體耗損或膠體因在基板的處理期施加至膠體的力而崩解時,邊緣環及支撐環的耦合使邊緣環相對於支撐環固定。此外,支撐環藉由一或更多壓緊桿相對於絕緣體環加以固定。因此,邊緣環藉由支撐環相對於絕緣體環係固定的,且因此在基板的處理期間邊緣環無法位移。如此的位移欠缺減少(諸如避免)在基板上執行任何不期望的製程之可能性、或減少基板之不期望的區域受到處理之可能性。 Further advantages of the system and method include providing the edge ring with one or more slots, such as screw holes, for receiving fasteners, such as screws, for coupling the edge ring to the support ring. The coupling of the edge ring and the support ring keeps the edge ring relative to the support ring even when the adhesion provided by the glue between the edge ring and the support ring decreases or the glue wears out or disintegrates due to the forces applied to the glue during the processing of the substrate. fixed. Furthermore, the support ring is fixed relative to the insulator ring by one or more compression rods. Thus, the edge ring is fixed relative to the insulator ring by the support ring and thus cannot be displaced during processing of the substrate. Such lack of displacement reduces, such as avoids, the likelihood of performing any undesired processes on the substrate, or reduces the likelihood of undesired areas of the substrate being processed.

該系統及方法的額外優點包含設置一或更多機構,諸如一或更多氣動機構,用於藉由一或更多壓緊桿下拉或上推支撐環。在基板的處理期間執行下拉,以減少支撐環相對於絕緣體環位移的可能性。因此,由於下拉,邊緣環及支撐環在多個處理操作期間(諸如從處理操作至另一者)在電漿腔室內保持固定,直到被更換或從電漿腔室移除以供維修。執行上推以移除邊緣環或支撐環以供更換或維修,諸如清潔。 Additional advantages of the system and method include providing one or more mechanisms, such as one or more pneumatic mechanisms, for pulling down or pushing up the support ring by one or more compression rods. Pull down is performed during processing of the substrate to reduce the possibility of displacement of the support ring relative to the insulator ring. Thus, due to the pull down, the edge ring and support ring remain stationary within the plasma chamber during multiple processing operations, such as from processing operation to another, until replaced or removed from the plasma chamber for maintenance. Push up is performed to remove the edge ring or support ring for replacement or repair, such as cleaning.

本文描述之系統及方法的其他優點包含使蓋環設有一或更多彎曲的邊緣,以在電漿形成於電漿腔室內時減少電弧放電的可能性。此外,蓋環具有環形寬度,以如上所述在蓋環之垂直定向的內表面處達成隔絕電壓。 Other advantages of the systems and methods described herein include providing the cover ring with one or more curved edges to reduce the possibility of arcing when the plasma is formed within the plasma chamber. Furthermore, the cover ring has an annular width to achieve an isolation voltage at the vertically oriented inner surface of the cover ring as described above.

其他實施態樣將從以下詳細說明結合隨附圖式而變得顯而易見。 Other implementation aspects will become apparent from the following detailed description in conjunction with the accompanying drawings.

100:系統 100: system

104:卡盤 104: Chuck

106:絕緣體環 106: insulator ring

108:邊緣環 108: edge ring

110A:膠體層 110A: colloidal layer

110B:膠體層 110B: colloidal layer

110C:膠體層 110C: Colloidal layer

112:支撐環 112: support ring

114:接地環 114: Grounding ring

116:基環 116: base ring

118:蓋環 118: cover ring

122:緊固件 122: Fasteners

124A:緊固件孔 124A: Fastener holes

124B:緊固件孔 124B: Fastener holes

124C:緊固件孔 124C: Fastener holes

125:槽 125: slot

132A:通孔 132A: Through hole

200:系統 200: system

201:蓋環 201: cover ring

202:蓋環 202: cover ring

203:內表面 203: inner surface

204:O形環 204: O-ring

206:功率銷饋通部 206: Power pin feedthrough

208:功率銷 208: Power pin

210:基環 210: base ring

212:接地環 212: Grounding ring

213:可追踪距離 213: Trackable distance

214:O形環 214: O-ring

216A:安裝座 216A: Mounting seat

218:缽狀體 218: Bowl

224:設備板 224:Equipment board

228:邊緣環 228: edge ring

230:絕緣體壁 230: insulator wall

300:系統 300: system

302A:壓緊桿 302A: Compression rod

302B:壓緊桿 302B: Compression rod

308:底表面 308: bottom surface

330:槽 330: slot

332:接收器 332: Receiver

604A:安裝座 604A: Mounting seat

900:系統 900: system

902:肩螺釘 902: Shoulder screw

906:按壓連接器 906: Press connector

908:螺紋適配器 908: threaded adapter

910:螺釘 910: screw

912:氣缸 912: Cylinder

914:空氣配件 914:Air fittings

914A:空氣配件 914A: Air Fittings

914B:空氣配件 914B: Air Fittings

916:活塞體 916: piston body

918:活塞桿 918: piston rod

920A:扣緊機構 920A: fastening mechanism

920B:扣緊機構 920B: fastening mechanism

920C:扣緊機構 920C: fastening mechanism

922:活塞 922: Piston

924:邊緣環 924: edge ring

930:中心開口 930: center opening

931:槽 931: slot

932:螺紋 932: Thread

934:螺紋 934: Thread

1100:系統 1100: system

1102A:空氣路線 1102A: Air route

1102B:空氣路線 1102B: Air route

1104A:上部 1104A: upper part

1104B:下部 1104B: lower part

1104C:上部 1104C: upper part

1104D:下部 1104D: lower part

1104E:上部 1104E: upper part

1104F:下部 1104F: lower part

1106A:管 1106A: tube

1106B:管 1106B: tube

1106C:管 1106C: tube

1106D:管 1106D: tube

1106E:管 1106E: tube

1106F:管 1106F: tube

1106G:管 1106G: tube

1106H:管 1106H: tube

1106I:管 1106I: tube

1106J:管 1106J: tube

1150:系統 1150: system

1200:系統 1200: system

1202A:空氣壓縮器 1202A: Air compressor

1202B:空氣壓縮器 1202B: Air compressor

1204A:調節器 1204A: regulator

1204B:調節器 1204B: regulator

1206A:孔口 1206A: Orifice

1206B:孔口 1206B: Orifice

1604:頂表面 1604: top surface

1606:內表面 1606: inner surface

1608:內表面 1608: inner surface

1610:內表面 1610: inner surface

1612:底表面 1612: bottom surface

1614:外表面 1614: outer surface

1616:彎曲的邊緣 1616: curved edge

1618:內表面 1618: inner surface

1620:內表面 1620: inner surface

1622:台階 1622: steps

1650:系統 1650: system

1652:螺紋 1652: Thread

1654:螺紋 1654: Thread

1658:主體 1658: subject

1660:頭部 1660: head

1704:頂表面 1704: top surface

1705:底表面 1705: bottom surface

1706:彎曲的邊緣 1706: curved edge

1710:外表面 1710: Outer surface

1712:外表面 1712: Outer surface

1714:外表面 1714: outer surface

1716:外表面 1716: Outer surface

1718:底表面 1718: bottom surface

1719:外表面 1719: External surface

1720:內表面 1720: inner surface

1722:內表面 1722: inner surface

1724:內表面 1724: inner surface

1726:階梯式縮減部 1726: Stepped reduction department

1728:階梯式縮減部 1728: Stepped reduction department

1729:階梯式縮減部 1729: Stepped reduction department

1730:上主體部分 1730: Upper main body

1732:中間主體部分 1732: Middle body part

1734:下主體部分 1734: Lower body part

1735:可追踪距離 1735: Trackable distance

1736:內表面 1736: inner surface

1746:環形寬度 1746: ring width

1754:環形寬度 1754: ring width

1761:上主體部分 1761: Upper body

1762:深度 1762: Depth

1763:中間主體部分 1763: Middle body part

1764:深度 1764: Depth

1765:下主體部分 1765: lower body

1766:頂表面 1766: top surface

1768:外表面 1768: External surface

1770:外表面 1770: External surface

1772:外表面 1772: External surface

1774:外表面 1774: External surface

1776:底表面 1776: bottom surface

1778:內表面 1778: inner surface

1780:內表面 1780: inner surface

1781:內表面 1781: inner surface

1782:內表面 1782: inner surface

1783:階梯式縮減部 1783: Step-down reduction department

1784:階梯式縮減部 1784: Stepped reduction department

1786:環形寬度 1786: ring width

1788:環形寬度 1788: ring width

1790:深度 1790: Depth

1792:深度 1792: Depth

1794:可追踪距離 1794: Traceable distance

A1:角度 A1: angle

A2:角度 A2: Angle

C1:連接器 C1: Connector

C2:連接器 C2: Connector

C3:連接器 C3: Connector

C4:連接器 C4: Connector

D1:直徑 D1: diameter

D2:直徑 D2: diameter

D3:直徑 D3: diameter

d1:距離 d1: distance

d2:長度 d2: length

d3:距離 d3: distance

dA:距離 dA: distance

dB:距離 dB: distance

dC:距離 dC: distance

dD:距離 dD: distance

EL:電極 EL: electrode

ID:內直徑 ID: inner diameter

ID1:內直徑 ID1: inner diameter

ID2:(內)直徑 ID2: (inner) diameter

L1:位置 L1: position

L2:位置 L2: position

L11:寬度 L11: width

L12:長度 L12: Length

L13:寬度 L13: width

L14:長度 L14: Length

L15:寬度 L15: width

L21:深度 L21: Depth

L22:寬度 L22: width

L23:深度 L23: Depth

L24:寬度 L24: width

MD:中間直徑 MD: middle diameter

OD:外直徑 OD: Outer diameter

OD1:外直徑 OD1: Outer diameter

OD2:(外)直徑 OD2: (outer) diameter

P1:部分 P1: part

P2:部分 P2: part

P3:部分 P3: part

P4:部分 P4: part

P5:部分 P5: part

P6:部分 P6: part

PR1:頂部部分 PR1: top part

PR2:中間部分 PR2: middle part

PRTN1:頂部部分 PRTN1: top part

R1:半徑 R1: Radius

R2:半徑 R2: Radius

R3:半徑 R3: Radius

R4:半徑 R4: Radius

R5:半徑 R5: Radius

R6:半徑 R6: Radius

R7:半徑 R7: Radius

RA:半徑 RA: Radius

RB:半徑 RB: Radius

RC:半徑 RC: Radius

RD:半徑 RD: Radius

RE:半徑 RE: Radius

RF:半徑 RF: Radius

RG:半徑 RG: Radius

RH:半徑 RH: Radius

RJ:半徑 RJ: Radius

RK:半徑 RK: Radius

SS:側表面 SS: side surface

TS:頂表面 TS: top surface

W1:寬度 W1: width

該等實施例可藉由參照以下結合附圖的敘述而受到最佳理解。 The embodiments can be best understood by referring to the following description in conjunction with the accompanying drawings.

圖1是系統之實施例的圖,以說明將邊緣環固定至支撐環的方式。 Figure 1 is a diagram of an embodiment of a system to illustrate the manner in which an edge ring is secured to a support ring.

圖2是系統之實施例的圖,以說明功率銷對支撐環的耦合。 Figure 2 is a diagram of an embodiment of a system to illustrate the coupling of power pins to a support ring.

圖3A是系統之實施例的圖,以說明將多個壓緊桿(hold down rod)連接至支撐環的多個位置。 Figure 3A is a diagram of an embodiment of a system to illustrate multiple locations where multiple hold down rods are connected to a support ring.

圖3B係說明壓緊桿與支撐環之底表面之耦接的等角視圖。 Figure 3B is an isometric view illustrating the coupling of the compression rod to the bottom surface of the support ring.

圖4係用於將邊緣環及支撐環固定至絕緣體環之系統之實施例的側視圖。 4 is a side view of an embodiment of a system for securing an edge ring and a support ring to an insulator ring.

圖5係扣緊機構之實施例的等角視圖。 Figure 5 is an isometric view of an embodiment of the fastening mechanism.

圖6A是系統之實施例的圖,用於說明壓緊桿的同步下拉。 Figure 6A is a diagram of an embodiment of a system illustrating synchronized pull-down of compression rods.

圖6B是系統之實施例的圖,用於說明壓緊桿的同步上推。 Figure 6B is a diagram of an embodiment of a system illustrating synchronized push-up of compression rods.

圖7是系統之實施例的方塊圖,以說明將空氣供應至多個扣緊機構。 7 is a block diagram of an embodiment of a system to illustrate supplying air to multiple fastening mechanisms.

圖8A係邊緣環之實施例的等角視圖。 Figure 8A is an isometric view of an embodiment of an edge ring.

圖8B係圖8A的邊緣環之實施例的頂視圖。 8B is a top view of an embodiment of the edge ring of FIG. 8A.

圖8C係圖8B之邊緣環的橫剖面圖。 Figure 8C is a cross-sectional view of the edge ring of Figure 8B.

圖8D是系統之實施例的圖,以說明緊固件對圖8A之邊緣環的耦合。 8D is a diagram of an embodiment of a system to illustrate the coupling of fasteners to the edge ring of FIG. 8A.

圖9A係蓋環之實施例的等角視圖。 Figure 9A is an isometric view of an embodiment of a cover ring.

圖9B係圖9A之蓋環之實施例的底視圖。 Figure 9B is a bottom view of the embodiment of the cover ring of Figure 9A.

圖9C係圖9A之蓋環之實施例的頂視圖。 Figure 9C is a top view of the embodiment of the cover ring of Figure 9A.

圖9D係圖9C之蓋環之實施例的橫剖面圖。 9D is a cross-sectional view of an embodiment of the cover ring of FIG. 9C.

圖9E係圖9A之蓋環之實施例的橫剖面圖。 9E is a cross-sectional view of an embodiment of the cover ring of FIG. 9A.

圖9F係圖9A之蓋環之實施例的橫剖面圖。 9F is a cross-sectional view of an embodiment of the cover ring of FIG. 9A.

圖9G係蓋環之實施例的橫剖面圖。 Figure 9G is a cross-sectional view of an embodiment of a cover ring.

以下實施例描述用於固定電漿腔室內之邊緣環的系統及方法。顯然地,本發明實施例可以不具有某些或全部這些具體細節而實施。另一方面,未詳細說明眾所周知的製程操作,以免不必要地混淆本發明實施例。 The following examples describe systems and methods for securing edge rings within plasma chambers. Obviously, embodiments of the invention may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail so as not to unnecessarily obscure embodiments of the invention.

圖1是系統100之實施例的圖,以說明將邊緣環108固定至支撐環112的方式,該支撐環112在本文有時被稱為可調邊緣鞘(TES)環。系統100包含邊緣環108、接地環114、基環116(如下面圖9G所示)、絕緣體環106、蓋環118(如下面圖9G所示)、及卡盤104。邊緣環108係由導電材料製成,諸如矽、硼摻雜的單晶矽、氧化鋁、矽碳化物、或氧化鋁層頂部上的矽碳化物層、或矽的合金、或其組合。應注意邊緣環108具有環形體,諸如圓形體、或環形體、或盤形體。此外,支撐環112係由介電材料製成,諸如石英、或陶瓷、或氧化鋁(Al2O3)、或聚合物。作為示例,支撐環112具有約12.5英吋的內直徑、約13.5英吋的外直徑、及沿y軸之約0.5英吋的厚度。為了說明,支撐環112具有範圍從約12.7英吋(含)至約13英吋的內直徑、從約13.3英吋(含)至約14英吋的外直徑、及從約0.5英吋(含)至約0.7英吋的厚度。此只是用於處理300毫米晶圓之電漿腔室的示例尺寸。 1 is a diagram of an embodiment of a system 100 to illustrate the manner in which an edge ring 108 is secured to a support ring 112, sometimes referred to herein as a adjustable edge sheath (TES) ring. System 100 includes edge ring 108 , ground ring 114 , base ring 116 (shown in FIG. 9G below), insulator ring 106 , cover ring 118 (shown in FIG. 9G below), and chuck 104 . Edge ring 108 is made of a conductive material such as silicon, boron doped single crystal silicon, aluminum oxide, silicon carbide, or a silicon carbide layer on top of an aluminum oxide layer, or an alloy of silicon, or a combination thereof. It should be noted that the edge ring 108 has an annular body, such as a circular body, or an annular body, or a disc-shaped body. Furthermore, the support ring 112 is made of a dielectric material, such as quartz, or ceramic, or aluminum oxide (Al 2 O 3 ), or polymer. As an example, support ring 112 has an inner diameter of about 12.5 inches, an outer diameter of about 13.5 inches, and a thickness along the y-axis of about 0.5 inches. To illustrate, support ring 112 has an inner diameter ranging from about 12.7 inches (inclusive) to about 13 inches, an outer diameter from about 13.3 inches (inclusive) to about 14 inches, and an outer diameter ranging from about 0.5 inches (inclusive). ) to a thickness of about 0.7 inches. These are just example dimensions of a plasma chamber for processing 300 mm wafers.

此外,絕緣體環106係由諸如介電材料的絕緣體材料製成,且基環116係亦由介電材料製成。接地環114係由導電材料製成。接地環114係耦接至接地電位。卡盤104的示例包含靜電卡盤。諸如邊緣環108、支撐環112、接地環114、基環116、及絕緣體環106的各環具有環形形狀,諸如環形或盤形。蓋環118係由諸如熔融矽石石英的介電材料、或諸如鋁氧化物(Al2O3)或釔氧化物(Y2O3)的陶瓷材料製成。蓋環118具有環形體,諸如盤形或環形的環形體。 Furthermore, the insulator ring 106 is made of an insulator material, such as a dielectric material, and the base ring 116 is also made of a dielectric material. The ground ring 114 is made of conductive material. The ground ring 114 is coupled to ground potential. Examples of chuck 104 include electrostatic chucks. Each ring, such as edge ring 108 , support ring 112 , ground ring 114 , base ring 116 , and insulator ring 106 has an annular shape, such as a ring or a disk. Cover ring 118 is made of a dielectric material such as fused silica quartz, or a ceramic material such as aluminum oxide (Al 2 O 3 ) or yttrium oxide (Y 2 O 3 ). The cover ring 118 has an annular body, such as a disk-shaped or ring-shaped annular body.

邊緣環108的底表面具有藉由導熱膠體層110A耦接至支撐環112上表面的部分P1,以使支撐環112的熱散至邊緣環108。如本文使用之導熱膠體的示例包含聚醯亞胺、聚酮、聚醚酮、聚醚碸、聚對苯二甲酸乙二酯、氟化乙烯-丙烯共聚物、纖維素、三乙酸酯(triacetates)、及矽氧樹脂(silicone)。再者, 邊緣環108的底表面具有藉由導熱膠體層110B耦接至卡盤104上表面的另一部分P2。此外,邊緣環108的底表面尚具有位在基環116上方且毗鄰基環116的另一部分P3。 The bottom surface of the edge ring 108 has a portion P1 coupled to the upper surface of the support ring 112 via the thermally conductive adhesive layer 110A to dissipate heat from the support ring 112 to the edge ring 108 . Examples of thermally conductive gels as used herein include polyimides, polyketones, polyetherketones, polyethersulfones, polyethylene terephthalate, fluorinated ethylene-propylene copolymers, cellulose, triacetate ( triacetates), and silicone. Furthermore, The bottom surface of the edge ring 108 has another portion P2 coupled to the upper surface of the chuck 104 via the thermally conductive adhesive layer 110B. In addition, the bottom surface of the edge ring 108 still has another portion P3 located above and adjacent to the base ring 116 .

邊緣環108係位在基環116、支撐環112、及卡盤104上方。邊緣環108的底表面面向基環116、支撐環112、及卡盤104的一部分。邊緣環108亦圍繞卡盤104的一部分,諸如頂部部分PRTN1。支撐環112圍繞卡盤104的一部分,且絕緣體環106圍繞卡盤104的另一部分。基環116圍繞絕緣體環106的一部分及支撐環112。蓋環118圍繞邊緣環108及基環116。接地環114圍繞蓋環118的一部分及基環116。蓋環118的一部分係位在接地環114上方且蓋環118係毗鄰接地環114的側部配置。 Edge ring 108 is positioned over base ring 116 , support ring 112 , and chuck 104 . The bottom surface of edge ring 108 faces base ring 116 , support ring 112 , and a portion of chuck 104 . The edge ring 108 also surrounds a portion of the chuck 104, such as the top portion PRTN1. A support ring 112 surrounds a portion of the chuck 104 and an insulator ring 106 surrounds another portion of the chuck 104 . Base ring 116 surrounds a portion of insulator ring 106 and support ring 112 . A cover ring 118 surrounds the edge ring 108 and the base ring 116 . The ground ring 114 surrounds a portion of the cover ring 118 and the base ring 116 . A portion of the cover ring 118 is positioned above the ground ring 114 and the cover ring 118 is disposed adjacent to the side of the ground ring 114 .

邊緣環108具有多個邊緣,諸如邊緣1、邊緣2、邊緣3、邊緣4、邊緣5、及邊緣6。邊緣1至6各者係彎曲的,諸如弧形的。為了說明,邊緣1至6各者沒有銳角、具有半徑、及具有平滑的曲線。應注意在諸多實施例中,邊緣1至6各者的半徑係大於從約0.01英吋(含)至約0.03英吋的範圍。從約0.01英吋(含)至約0.03英吋之邊緣的半徑減少在半導體晶圓的製造期間之邊緣碎裂的可能性。碎裂在半導體晶圓的處理期間產生顆粒。 Edge ring 108 has a plurality of edges, such as edge 1 , edge 2 , edge 3 , edge 4 , edge 5 , and edge 6 . Edges 1 to 6 are each curved, such as arcuate. To illustrate, edges 1-6 each have no sharp angles, have radii, and have smooth curves. It should be noted that in many embodiments, the radius of each of edges 1-6 is greater than the range from about 0.01 inches (inclusive) to about 0.03 inches. A radius of the edge from about 0.01 inches (inclusive) to about 0.03 inches reduces the likelihood of edge chipping during semiconductor wafer fabrication. Fragmentation produces particles during the processing of semiconductor wafers.

在一實施例中,邊緣環108具有複數邊緣。在一實施例中,界定邊緣環108的邊緣係加以圓化。舉例而言,邊緣環108的邊緣1係圓化成約0.03英吋或更大且較佳是大於0.07英吋的半徑。為了說明,將邊緣1圓化成具有範圍從約0.03英吋(含)至約0.1英吋的半徑。作為另一示例,將邊緣1圓化成具有範圍從約0.07英吋(含)至約0.1英吋的半徑。由於邊緣環108的邊緣1靠近接地環114,所以邊緣環108的邊緣1係特別容易電弧放電(arcing)。由於在電漿處理操作中使用的功率位準增加,高電場將在邊緣環108與接地環114之間產生。邊緣1的圓化減少如此電弧放電的可能性。已確定當電漿腔室在操作中時,這些邊緣的較低 圓化程度可能不足以防止或減少RF功率之電弧放電的可能性。受電漿腔室內較尖銳之特徵部邊緣所影響,電弧放電之可能性的減少可能對在半導體晶圓上及上方執行的製造製程有害。輕微的邊緣圓化(例如範圍從約0.01英吋(含)至約0.03英吋的邊緣1),有助於減少半導體晶圓的製造期間之顆粒產生、或製造期間邊緣碎裂的可能性。因此,儘管在配置於電漿腔室內之特徵部(例如邊緣1)的表面上執行一些圓化,有鑑於電漿處理操作中所使用之增加的功率位準,此圓化程度係小於用於防止或減少電弧放電的圓化程度。 In one embodiment, the edge ring 108 has a plurality of edges. In one embodiment, the edges defining edge ring 108 are rounded. For example, edge 1 of edge ring 108 is rounded to a radius of about 0.03 inches or greater, and preferably greater than 0.07 inches. For illustration, edge 1 is rounded to have a radius ranging from about 0.03 inches (inclusive) to about 0.1 inches. As another example, edge 1 is rounded to have a radius ranging from about 0.07 inches (inclusive) to about 0.1 inches. Edge 1 of edge ring 108 is particularly susceptible to arcing due to its proximity to ground ring 114 . Due to the increased power levels used in plasma processing operations, high electric fields will be generated between the edge ring 108 and the ground ring 114 . The rounding of the edge 1 reduces the possibility of such arcing. It has been determined that when the plasma chamber is in operation, the lower The degree of rounding may not be sufficient to prevent or reduce the possibility of arcing from RF power. Due to the sharper feature edges within the plasma chamber, the reduced likelihood of arcing can be detrimental to manufacturing processes performed on and above the semiconductor wafer. Slight edge rounding (eg, Edge 1 ranging from about 0.01 inches inclusive to about 0.03 inches inclusive) helps reduce particle generation during semiconductor wafer fabrication, or the likelihood of edge chipping during fabrication. Thus, although some rounding is performed on the surface of features (such as edge 1) disposed within the plasma chamber, this degree of rounding is less than that used for Rounding to prevent or reduce arcing.

當電漿形成於系統100所位在的電漿腔室內時,彎曲的邊緣1至6減少碎裂或電弧放電的可能性。應注意與邊緣1相比,邊緣5係較不受圓化以減少電漿的電漿離子進入邊緣5與卡盤104間之間隙內的可能性。舉例而言,邊緣5的半徑係低於邊緣1的半徑。作為示例,邊緣環108具有沿x軸之範圍從約13.6英吋(含)至約15英吋的外直徑。作為另一示例,邊緣環108具有範圍從約13英吋(含)至約15英吋的外直徑。作為又另一示例,邊緣環108具有沿y軸測量之約0.248英吋的厚度。為了說明,邊緣環108的厚度之範圍從約0.24英吋(含)至約0.256英吋。x軸係垂直於y軸。隨著邊緣環108的外直徑增大,鄰接邊緣環108之邊緣1的外側表面與蓋環118之間的距離減小。當電漿形成於電漿腔室內時,距離的減少使邊緣環108與蓋環118間之RF功率之電弧放電的可能性減小。 The curved edges 1-6 reduce the possibility of fragmentation or arcing when the plasma is formed within the plasma chamber in which the system 100 is located. It should be noted that edge 5 is less rounded than edge 1 to reduce the possibility of plasma ions of the plasma entering the gap between edge 5 and chuck 104 . For example, the radius of edge 5 is lower than the radius of edge 1 . As an example, edge ring 108 has an outer diameter along the x-axis ranging from about 13.6 inches inclusive to about 15 inches. As another example, edge ring 108 has an outer diameter ranging from about 13 inches (inclusive) to about 15 inches. As yet another example, edge ring 108 has a thickness measured along the y-axis of about 0.248 inches. To illustrate, the thickness of the edge ring 108 ranges from about 0.24 inches (inclusive) to about 0.256 inches. The x-axis is perpendicular to the y-axis. As the outer diameter of the edge ring 108 increases, the distance between the outer surface of the edge 1 adjoining the edge ring 108 and the cover ring 118 decreases. The reduction in distance reduces the likelihood of arcing of the RF power between the edge ring 108 and the cover ring 118 when the plasma is formed within the plasma chamber.

邊緣環108包含在邊緣環108的底表面內形成的多個槽,諸如槽125。邊緣環內之槽的例子係螺釘孔。每一槽圍繞一緊固件孔,諸如緊固件孔124A。緊固件孔不完全沿y軸、沿著邊緣環108的長度延伸,以在邊緣環108內形成通孔。多個緊固件孔係在邊緣環108的底表面內形成。緊固件孔的示例係具有用於容納螺釘之螺旋螺紋的螺釘孔。槽125具有頂表面TS及側表面SS。頂表面TS及側表面SS係藉由鑽入至邊緣環108之底表面而形成的表面。側表面SS係實質垂直於頂表面TS。舉例而言,側表面SS係相對於頂表面TS呈一角度,諸如形成範 圍在85度與95度之間的角度。作為另一示例,側表面SS係垂直於頂表面TS。頂表面TS部分地包圍緊固件孔124A且側表面SS部分地包圍緊固件孔124A。 Edge ring 108 includes a plurality of grooves, such as groove 125 , formed in a bottom surface of edge ring 108 . An example of a groove in the edge ring is a screw hole. Each slot surrounds a fastener hole, such as fastener hole 124A. The fastener holes do not extend completely along the y-axis, along the length of the edge ring 108 , to form through-holes within the edge ring 108 . A plurality of fastener holes are formed in the bottom surface of the edge ring 108 . An example of a fastener hole is a screw hole with helical threads for receiving a screw. The groove 125 has a top surface TS and a side surface SS. The top surface TS and the side surface SS are surfaces formed by drilling into the bottom surface of the edge ring 108 . The side surface SS is substantially perpendicular to the top surface TS. For example, the side surface SS is at an angle with respect to the top surface TS, such as forming a range Angles between 85 and 95 degrees. As another example, the side surface SS is perpendicular to the top surface TS. The top surface TS partially surrounds the fastener hole 124A and the side surface SS partially surrounds the fastener hole 124A.

此外,通孔132A係在支撐環112內形成以用於接收緊固件122,諸如螺釘或螺栓或銷。類似地,諸如通孔132A之額外的通孔係在支撐環112內的其他位置形成,以容納如本文所述用於將支撐環112耦接至邊緣環的多個緊固件,諸如緊固件122。舉例而言,三個通孔係在支撐環112內在沿x軸之水平面中之等邊三角形的頂點處形成。作為另一例子,六或九個通孔係在支撐環112內形成,而在一組相鄰的通孔之間的距離係實質等於(諸如等於或在預定限度內)另一組相鄰的通孔之間的距離。應注意該組相鄰的通孔具有至少一通孔不同於另一組相鄰的通孔之其中至少一者。 Additionally, through holes 132A are formed in the support ring 112 for receiving fasteners 122, such as screws or bolts or pins. Similarly, additional through-holes, such as through-hole 132A, are formed elsewhere within support ring 112 to accommodate a plurality of fasteners, such as fasteners 122, for coupling support ring 112 to the edge ring as described herein. . For example, three through holes are formed within the support ring 112 at the vertices of an equilateral triangle in the horizontal plane along the x-axis. As another example, six or nine through-holes are formed in support ring 112, and the distance between one set of adjacent through-holes is substantially equal (such as equal to or within predetermined limits) of another set of adjacent through-holes. distance between vias. It should be noted that the set of adjacent vias has at least one via different from at least one of the other set of adjacent vias.

緊固件122係由諸如鋼、鋁、鋼的合金、或鋁的合金之金屬製成。通孔132A係形成為與緊固件122的形狀一致。舉例而言,緊固件122具有直徑大於緊固件122之主體的頭部。通孔132A的下部係製造成具有與緊固件122的頭部相比稍大(諸如幾分之一毫米(mm))的直徑。再者,通孔132A的上部係製造成具有與緊固件122的主體相比稍大(諸如幾分之一毫米)的直徑。此外,與緊固件122的螺紋部分相比,緊固件孔124A的直徑係製造成稍大,諸如幾分之一毫米。此外,空間係沿y軸在槽125的頂表面TS與緊固件122的尖端之間形成。空間的示例係範圍從約0mm(含)至約1mm的間隙1。間隙1的另一示例係範圍從約0mm(含)至約0.5mm的空間。間隙1的又一示例係範圍從約0mm(含)至約0.25mm的空間。間隙1的空間係在沿y軸的垂直方向上。槽125的頂表面TS與緊固件122的螺紋部分間的空間之範圍從約0mm(含)至約0.5mm,以減少空間內RF功率之電弧放電的可能性。若電弧放電發生,則緊固件122可能由於電弧放電產生的熱而熔化。 Fastener 122 is made of metal such as steel, aluminum, steel alloys, or aluminum alloys. The through hole 132A is formed to conform to the shape of the fastener 122 . For example, the fastener 122 has a head with a larger diameter than the body of the fastener 122 . The lower portion of the through hole 132A is fabricated with a diameter that is slightly larger (such as a fraction of a millimeter (mm)) than the head of the fastener 122 . Again, the upper portion of the through hole 132A is fabricated with a slightly larger diameter (such as a fraction of a millimeter) than the body of the fastener 122 . Furthermore, the diameter of the fastener hole 124A is made slightly larger, such as a fraction of a millimeter, compared to the threaded portion of the fastener 122 . In addition, a space is formed between the top surface TS of the slot 125 and the tip of the fastener 122 along the y-axis. An example of a space is a gap 1 ranging from about 0 mm inclusive to about 1 mm. Another example of gap 1 is a space ranging from about 0 mm (inclusive) to about 0.5 mm. Yet another example of gap 1 is a space ranging from about 0 mm (inclusive) to about 0.25 mm. The space of gap 1 is in the vertical direction along the y-axis. The space between the top surface TS of the slot 125 and the threaded portion of the fastener 122 ranges from about 0 mm inclusive to about 0.5 mm to reduce the possibility of arcing from RF power in the space. If arcing occurs, fastener 122 may melt due to heat generated by the arcing.

緊固件122係插入通孔132A內,使得緊固件122的頭部及主體係位在支撐環112內,而緊固件122的螺紋部分係插入至在邊緣環108內形成的緊固件孔124A。在緊固件122的側表面與支撐環112的內側表面之間形成的空間(諸如間隙2)之範圍從約0mm(含)至約0.2mm。 Fastener 122 is inserted into through hole 132A such that the head and body of fastener 122 are seated within support ring 112 and the threaded portion of fastener 122 is inserted into fastener hole 124A formed in edge ring 108 . The space (such as gap 2 ) formed between the side surface of the fastener 122 and the inner side surface of the support ring 112 ranges from about 0 mm (inclusive) to about 0.2 mm.

支撐環112具有嵌入其中的電極EL,用於接收經由輔助匹配(諸如阻抗匹配電路)自輔助RF產生器接收之RF訊號的射頻(RF)功率。 The support ring 112 has electrodes EL embedded therein for receiving radio frequency (RF) power of an RF signal received from an auxiliary RF generator via auxiliary matching, such as an impedance matching circuit.

在一些實施例中,支撐環112係耦合環。 In some embodiments, support ring 112 is a coupling ring.

在諸多實施例中,緊固件122係由塑膠製成。 In many embodiments, the fastener 122 is made of plastic.

在一些實施例中,取代傳導膠體層,使用在其兩側皆具有傳導膠體的雙面傳導帶。在諸多實施例中,取代傳導膠體層,使用具有傳導膠體的填隙珠。 In some embodiments, instead of the conductive gel layer, a double-sided conductive tape with conductive gel on both sides is used. In many embodiments, instead of a layer of conductive gel, interstitial beads with conductive gel are used.

在一些實施例中,取代具有多個螺紋的緊固件孔,此處描述之在邊緣環之底表面內的緊固件孔裝配有插入件,諸如金屬套管。為了說明,金屬套管係旋緊至在邊緣環的底表面內形成的槽。插入件在其內表面內具有螺紋。緊固件係接著旋緊至插入件的螺紋而非旋緊至具有螺紋的緊固件孔。 In some embodiments, instead of fastener holes having multiple threads, the fastener holes described herein in the bottom surface of the edge ring are fitted with inserts, such as metal sleeves. For illustration, a metal sleeve is screwed into a groove formed in the bottom surface of the edge ring. The insert has threads in its inner surface. The fastener is then threaded to the threads of the insert rather than to the threaded fastener hole.

圖2是系統200之實施例的圖,以說明功率銷208對支撐環112的耦合。系統200包含邊緣環228、蓋環201、接地環114、絕緣體環106、基環210、設備板224、卡盤104、支撐環112、缽狀體218、及絕緣體壁230。絕緣體壁230如本文描述係電漿腔室之偏壓外罩的壁。絕緣體環106相對於絕緣體壁230係固定的,諸如非可運動的。接地環114係未塗佈的。邊緣環228在本文有時被稱為熱邊緣環(HER)。邊緣環228係由與圖1邊緣環108相同的材料製成,除了邊緣環228具有與邊緣環108不同的形狀。作為示例,邊緣環228具有沿x軸之範圍從約13.6英吋(含)至約15英吋的外直徑。作為另一示例,邊緣環228具有範圍從約13英吋(含)至約15英吋的外直徑。作為又另一示例,邊緣環228具有沿y軸測量之約0.248英 吋的厚度。為了說明,邊緣環228之厚度的範圍從約0.24英吋(含)至約0.256英吋。圖1的多個緊固件孔(諸如緊固件孔124A)係在邊緣環228內形成以將邊緣環228固定至支撐環112。 FIG. 2 is a diagram of an embodiment of a system 200 to illustrate the coupling of power pins 208 to support ring 112 . System 200 includes edge ring 228 , cover ring 201 , ground ring 114 , insulator ring 106 , base ring 210 , device plate 224 , chuck 104 , support ring 112 , bowl 218 , and insulator wall 230 . The insulator wall 230, as described herein, is the wall of the bias enclosure of the plasma chamber. The insulator ring 106 is fixed, such as non-movable, relative to the insulator wall 230 . Ground ring 114 is uncoated. Edge ring 228 is sometimes referred to herein as a hot edge ring (HER). Edge ring 228 is made of the same material as edge ring 108 of FIG. 1 , except that edge ring 228 has a different shape than edge ring 108 . As an example, edge ring 228 has an outer diameter along the x-axis ranging from about 13.6 inches inclusive to about 15 inches. As another example, edge ring 228 has an outer diameter ranging from about 13 inches (inclusive) to about 15 inches. As yet another example, edge ring 228 has an approximate diameter of 0.248 inches measured along the y-axis. inch thickness. To illustrate, the thickness of the edge ring 228 ranges from about 0.24 inches (inclusive) to about 0.256 inches. A plurality of fastener holes of FIG. 1 , such as fastener holes 124A, are formed in edge ring 228 to secure edge ring 228 to support ring 112 .

此外,蓋環201係由與圖1蓋環118相同的材料製成,除了蓋環201具有與蓋環118不同的形狀。蓋環201具有環形體,諸如盤形或環形的環形體。蓋環201的一部分係位在接地環114上方且毗鄰接地環114,而蓋環201的另一部分係位於毗鄰基環210且在基環210上方。類似地,基環210係由與圖1基環116相同的材料製成,除了基環210具有與基環116不同的形狀之外。 Furthermore, the cover ring 201 is made of the same material as the cover ring 118 of FIG. 1 except that the cover ring 201 has a different shape than the cover ring 118 . The cover ring 201 has a ring body, such as a disk-shaped or ring-shaped ring body. A portion of the cover ring 201 is located above and adjacent to the ground ring 114 , while another portion of the cover ring 201 is located adjacent to and above the base ring 210 . Similarly, base ring 210 is made of the same material as base ring 116 of FIG. 1 , except that base ring 210 has a different shape than base ring 116 .

邊緣環228的部分P5係藉由膠體層110C耦接至支撐環112,以使支撐環112向邊緣環228散熱。類似地,邊緣環228的另一部分P4係藉由膠體層110C耦接至卡盤104的一部分。邊緣環228圍繞卡盤104的頂部部分PRTN1。此外,邊緣環228的另一部分P6係毗鄰基環210之頂表面的一部分。此外,蓋環201圍繞邊緣環228。支撐環112係位在邊緣環228下方且圍繞卡盤104的一部分。絕緣體環106係位在支撐環112下方且圍繞卡盤104的底部部分。基環210係位在蓋環201下方且圍繞絕緣體環106的一部分。接地環114圍繞絕緣體環106的一部分及基環210。缽狀體218係位在絕緣體環106下方。絕緣體壁230係位在絕緣體環106的一部分及接地環114下方。絕緣體壁230係由絕緣體材料製成。 The portion P5 of the edge ring 228 is coupled to the support ring 112 through the glue layer 110C, so that the support ring 112 dissipates heat to the edge ring 228 . Similarly, another portion P4 of the edge ring 228 is coupled to a portion of the chuck 104 via the glue layer 110C. The edge ring 228 surrounds the top portion PRTN1 of the chuck 104 . In addition, another portion P6 of the edge ring 228 is adjacent to a portion of the top surface of the base ring 210 . Furthermore, cover ring 201 surrounds edge ring 228 . The support ring 112 is positioned below the edge ring 228 and surrounds a portion of the chuck 104 . An insulator ring 106 is positioned below the support ring 112 and surrounds the bottom portion of the chuck 104 . Base ring 210 is positioned below cover ring 201 and surrounds a portion of insulator ring 106 . Ground ring 114 surrounds a portion of insulator ring 106 and base ring 210 . Bowl 218 is positioned below insulator ring 106 . The insulator wall 230 is positioned below a portion of the insulator ring 106 and the ground ring 114 . The insulator wall 230 is made of an insulator material.

功率銷饋通部206係經由絕緣體環106中的通孔及形成於支撐環112內的孔洞插入。功率銷饋通部206係由諸如塑膠或陶瓷之絕緣體製成的套筒以保護功率銷208。功率銷208位在功率銷饋通部206之內。功率銷208係由諸如鋁或鋼的金屬製成之導電桿,以供將RF功率傳導至支撐環112或支撐環112之內的電極EL。功率銷208的尖端係與電極EL接觸以將RF功率提供至電極EL。功率銷饋通部206的中間部分係被包覆在由絕緣體材料製造的安裝座216A之內。 Power pin feedthroughs 206 are inserted through through holes in insulator ring 106 and holes formed in support ring 112 . The power pin feedthrough 206 is a sleeve made of an insulator such as plastic or ceramic to protect the power pin 208 . The power pin 208 is located within the power pin feedthrough 206 . The power pins 208 are conductive rods made of metal such as aluminum or steel for conducting RF power to the support ring 112 or to the electrodes EL within the support ring 112 . The tip of the power pin 208 is in contact with the electrode EL to provide RF power to the electrode EL. The middle portion of the power pin feedthrough 206 is encased within a mount 216A made of an insulator material.

O形環214係位在安裝座216A上方且毗鄰安裝座216A,以抵著功率銷饋通部206密封安裝座216A。O形環214圍繞功率銷饋通部206的底部部分。此處描述之O形環的示例係由諸如鋁或鋼之金屬製成的環。此外,另一O形環204係位在功率銷饋通部206的頂部部分,以防止功率銷208與功率銷饋通部206之間的空氣進入其中包含系統200之電漿腔室內的電漿。功率銷208與功率銷饋通部206之間沒有真空。O形環204圍繞功率銷饋通部206的頂部部分。 An O-ring 214 is positioned over and adjacent to the mount 216A to seal the mount 216A against the power pin feedthrough 206 . O-ring 214 surrounds the bottom portion of power pin feedthrough 206 . Examples of O-rings described here are rings made of metal such as aluminum or steel. Additionally, another O-ring 204 is positioned at the top portion of the power pin feedthrough 206 to prevent air between the power pin 208 and the power pin feedthrough 206 from entering the plasma within the plasma chamber containing the system 200 therein. . There is no vacuum between the power pin 208 and the power pin feedthrough 206 . O-ring 204 surrounds the top portion of power pin feedthrough 206 .

應注意在一些實施例中,使用多個功率銷。舉例而言,兩個功率銷係用以在多個位置對電極EL提供功率,該等功率銷可與功率銷饋通部、圍繞功率銷饋通部之各個底部部分的O形環、及圍繞功率銷饋通部之各個頂部部分的O形環一起使用。 It should be noted that in some embodiments, multiple power pins are used. For example, two power pins are used to provide power to the electrode EL at multiple locations, the power pins can be connected to the power pin feedthrough, the O-ring around each bottom portion of the power pin feedthrough, and the surrounding O-rings are used with each top portion of the power pin feedthrough.

隔絕RF電壓(stand-off RF voltage)係自經由輔助匹配從輔助RF產生器接收之RF訊號的RF功率產生。隔絕RF電壓具有從蓋環201之垂直定向的內表面203至接地環114的可追踪距離213。隔絕RF電壓係經由自垂直定向的內表面203至接地環114的可追踪距離213產生。應注意在一些實施例中,蓋環201的環形寬度係選擇成使得邊緣環228與接地環114之間的可追踪距離213係足以損失小於預定量之從邊緣環228至接地環114的RF電壓。舉例而言,若在蓋環201之垂直定向的內表面203處待達到之預定量的隔絕電壓係5000伏特(V),且每千分之一英吋的蓋環201耗散7與10伏特之間的電壓,則蓋環201的環形寬度係選擇成使得可追踪距離213或環形寬度係5000伏特之倍數(諸如二或三倍)與10伏特之比率。為了說明,該比率係(2×5000)/10伏特。可追踪距離213係在蓋環201之橫剖面的x-y平面中。x-y平面係由x軸及y軸形成且係位在x軸與y軸之間。 The stand-off RF voltage is generated from the RF power of the RF signal received from the auxiliary RF generator through auxiliary matching. The isolated RF voltage has a traceable distance 213 from the vertically oriented inner surface 203 of the cover ring 201 to the ground ring 114 . The isolated RF voltage is generated via the traceable distance 213 from the vertically oriented inner surface 203 to the ground ring 114 . It should be noted that in some embodiments, the annular width of the cover ring 201 is selected such that the traceable distance 213 between the edge ring 228 and the ground ring 114 is sufficient to lose less than a predetermined amount of RF voltage from the edge ring 228 to the ground ring 114 . For example, if the predetermined amount of isolation voltage to be achieved at the vertically oriented inner surface 203 of the cover ring 201 is 5000 volts (V), and the cover ring 201 dissipates 7 and 10 volts per thousandth of an inch Between voltages, the ring width of the cover ring 201 is selected such that the traceable distance 213 or the ring width is a multiple (such as two or three times) of 5000 volts and a ratio of 10 volts. For illustration, the ratio is (2*5000)/10 volts. The traceable distance 213 is in the x-y plane of the cross-section of the cover ring 201 . The x-y plane is formed by the x-axis and the y-axis and is located between the x-axis and the y-axis.

在一些實施例中,多個功率銷饋通部係耦接至支撐環112以提供RF功率。各功率銷饋通部具有一功率銷。 In some embodiments, a plurality of power pin feedthroughs are coupled to the support ring 112 to provide RF power. Each power pin feedthrough has a power pin.

在一些實施例中,接地環114係塗佈諸如氧化鋁的導電材料以增加接地環114的導電性。 In some embodiments, the ground ring 114 is coated with a conductive material such as alumina to increase the conductivity of the ground ring 114 .

在諸多實施例中,膠體層110C係置放在沿邊緣環228的下表面及沿支撐環112及卡盤104的上表面之多個位置處,以在邊緣環228與支撐環112之間及在邊緣環228與卡盤104之間提供導電性及導熱性。 In many embodiments, the gel layer 110C is placed at various locations along the lower surface of the edge ring 228 and along the upper surface of the support ring 112 and the chuck 104, so as to be between the edge ring 228 and the support ring 112 and Electrical and thermal conductivity is provided between the edge ring 228 and the chuck 104 .

圖3A是系統300之實施例的圖。各壓緊桿(hold down rod)302A及302B係經由支撐環112之底表面308中的各個槽插入。舉例而言,壓緊桿302A係插入至底表面308中在位置L1處的第一槽,以將支撐環112固定至在位置L1處的絕緣體環106。類似地,壓緊桿302B係插入至底表面308中在位置L2處的第二槽,以將支撐環112固定至在位置L2處的絕緣體環106。作為另一示例,各壓緊桿302A及302B在其頂部部分具有螺紋,且螺紋與底表面308內形成之各個槽的螺紋匹配。作為又另一示例,各壓緊桿302A及302B具有基於彈簧之可收縮及可延伸的機構,該機構在插入至底表面308內的各個槽之前收回且在插入之後延伸。 FIG. 3A is a diagram of an embodiment of a system 300 . Each hold down rod 302A and 302B is inserted through a respective slot in the bottom surface 308 of the support ring 112 . For example, compression rod 302A is inserted into a first slot in bottom surface 308 at location L1 to secure support ring 112 to insulator ring 106 at location L1 . Similarly, compression rod 302B is inserted into a second slot in bottom surface 308 at location L2 to secure support ring 112 to insulator ring 106 at location L2. As another example, each compression rod 302A and 302B has threads on its top portion, and the threads match the threads of the respective grooves formed in the bottom surface 308 . As yet another example, each compression rod 302A and 302B has a spring-based retractable and extendable mechanism that retracts prior to insertion into the respective slot in bottom surface 308 and extends after insertion.

應注意沿支撐環112之y軸測量之長度形成的各通孔之尺寸隨支撐環112的外直徑(OD)及內直徑(ID)變化。支撐環112的內直徑隨圖1及2之卡盤104的直徑變化。 It should be noted that the size of each through-hole formed along the length measured along the y-axis of the support ring 112 varies with the outer diameter (OD) and inner diameter (ID) of the support ring 112 . The inner diameter of the support ring 112 varies with the diameter of the chuck 104 of FIGS. 1 and 2 .

在諸多實施例中,將任何數目的壓緊桿(諸如兩個或多於兩個)用以耦接至支撐環112。 In various embodiments, any number of compression rods, such as two or more than two, are used to couple to the support ring 112 .

圖3B係說明壓緊桿302A與支撐環112之底表面308之耦接的等角視圖。在底表面內形成的係沿支撐環112的長度部分地延伸的槽330。支撐環112的長度係沿著y軸。槽330裝配有接收器332,該接收器332係由諸如鋁或鋼或鈦或鋁的合金或鋼的合金或鈦的合金之金屬製成。舉例而言,接收器332係經由諸如螺紋的附接機構附接至槽330的表面。為了進一步說明,槽330具有與接收器332 的螺紋接合的螺紋。壓緊桿302A的尖端係插入至接收器332以與接收器332接合而將壓緊桿302A連接至支撐環112。 FIG. 3B is an isometric view illustrating the coupling of the compression rod 302A to the bottom surface 308 of the support ring 112 . Formed in the bottom surface is a slot 330 that extends partially along the length of the support ring 112 . The length of the support ring 112 is along the y-axis. The tank 330 is fitted with a receptacle 332 made of a metal such as aluminum or steel or titanium or an alloy of aluminum or an alloy of steel or an alloy of titanium. For example, receiver 332 is attached to the surface of slot 330 via an attachment mechanism such as threads. For further illustration, slot 330 has a receiver 332 with The threads engaged by the threads. The tip of the compression rod 302A is inserted into the receptacle 332 to engage the receptacle 332 to connect the compression rod 302A to the support ring 112 .

圖4係用於將邊緣環924及支撐環112固定至絕緣體環106之系統900之實施例的側視圖。邊緣環924的示例包含圖1的邊緣環108及圖2的邊緣環228。系統900包含扣緊機構920A、絕緣體環106、支撐環112、及邊緣環924。扣緊機構920A包含氣缸912、氣動活塞922、螺紋適配器908、按壓連接器906、及用於將壓緊桿302A安裝至絕緣體壁230的安裝座604A。安裝座604A係藉由多個肩螺釘902安裝至絕緣體壁230。扣緊機構920A係耦接至多個空氣配件914,其包含位於扣緊機構920A之一側處的空氣配件914A及空氣配件914B。此處描述的扣緊機構係由諸如鋼、鋁、鋼的合金、或鋁的合金等之金屬製成。此外,空氣配件914係亦由諸如鋼、鋁、鋼的合金、或鋁的合金等之金屬製成。 4 is a side view of an embodiment of a system 900 for securing edge ring 924 and support ring 112 to insulator ring 106 . Examples of edge ring 924 include edge ring 108 of FIG. 1 and edge ring 228 of FIG. 2 . System 900 includes fastening mechanism 920A, insulator ring 106 , support ring 112 , and edge ring 924 . Clasp mechanism 920A includes air cylinder 912 , pneumatic piston 922 , threaded adapter 908 , press connector 906 , and mount 604A for mounting compression rod 302A to insulator wall 230 . Mount 604A is mounted to insulator wall 230 by a plurality of shoulder screws 902 . The clasp mechanism 920A is coupled to a plurality of air fittings 914 including an air fitting 914A and an air fitting 914B at one side of the clasp mechanism 920A. The fastening mechanisms described herein are made of metals such as steel, aluminum, steel alloys, or aluminum alloys. In addition, the air fitting 914 is also made of metal such as steel, aluminum, an alloy of steel, or an alloy of aluminum.

活塞922具有活塞體916及活塞桿918。活塞體916係在氣缸912內。活塞體916具有大於活塞桿918的直徑。活塞體916係與活塞桿918整合或附接至活塞桿918。安裝座604A係藉由在氣缸912之頂表面處的多個螺釘910附接至氣缸912。螺紋適配器908係插入至安裝座604A的中心開口930。螺紋適配器908係裝配至在活塞桿918之頂表面內形成的槽中。此外,螺紋適配器908具有用於將按壓連接器906裝配在槽內的槽。按壓連接器906係裝配有壓緊桿302A,該壓緊桿302A係經由安裝座604A的中心開口930插入。按壓連接器906係附接至(諸如旋緊至)壓緊桿302A的底部部分。 The piston 922 has a piston body 916 and a piston rod 918 . Piston body 916 is tied within cylinder 912 . Piston body 916 has a larger diameter than piston rod 918 . Piston body 916 is integral with or attached to piston rod 918 . The mount 604A is attached to the cylinder 912 by a plurality of screws 910 at the top surface of the cylinder 912 . Threaded adapter 908 is inserted into central opening 930 of mount 604A. Threaded adapter 908 fits into a groove formed in the top surface of piston rod 918 . Additionally, the threaded adapter 908 has a groove for fitting the press connector 906 within the groove. The press connector 906 is fitted with a compression rod 302A which is inserted through the central opening 930 of the mount 604A. The press connector 906 is attached to, such as screwed onto, the bottom portion of the press bar 302A.

類似地,另一壓緊桿302B(圖3A)係耦接至扣緊機構920B的另一氣動機構,其係描述於下。舉例而言,扣緊機構920B包含活塞(諸如活塞922),其係耦接至壓緊桿302B以在沿y軸的垂直方向上使壓緊桿302B向上及向下運動。壓緊桿302A在其尖端具有螺紋932,用於與在支撐環112的底表面308內形成的槽931之對應的螺紋934匹配。壓緊桿302A的頂部部分PR1經由支撐環112的底表面 延伸至支撐環112內的槽中,而壓緊桿302A的中間部分PR2經由絕緣體環106內的通孔延伸。類似地,壓緊桿302B的頂部部分延伸至支撐環112之底表面內的槽中,而壓緊桿302B的中間部分延伸至絕緣體環106內的通孔中。 Similarly, another compression rod 302B (FIG. 3A) is coupled to another pneumatic mechanism of clasp mechanism 920B, which is described below. For example, clasping mechanism 920B includes a piston, such as piston 922, that is coupled to compression rod 302B to move compression rod 302B up and down in a vertical direction along the y-axis. The compression rod 302A has threads 932 at its tip for mating with corresponding threads 934 of a groove 931 formed in the bottom surface 308 of the support ring 112 . The top portion PR1 of the compression rod 302A passes through the bottom surface of the support ring 112 Extends into a slot in the support ring 112 , while the middle portion PR2 of the compression rod 302A extends through a through hole in the insulator ring 106 . Similarly, the top portion of compression rod 302B extends into a groove in the bottom surface of support ring 112 , while the middle portion of compression rod 302B extends into a through hole in insulator ring 106 .

如上所述,支撐環112係經由一或更多緊固件物理性地連接至邊緣環924。當空氣經由空氣配件914B供應至氣缸912的下部時,壓力係藉由活塞體916之下表面下方的空氣產生。由於在活塞體916之下表面下方產生的壓力,活塞922沿y軸在垂直向上的方向上運動以將壓緊桿302A向上推。當壓緊桿302A被向上推時,支撐環112相對於絕緣體環106在垂直向上的方向上抬升。與支撐環112同時,邊緣環924係亦在遠離絕緣體環106之垂直向上的方向上抬升。支撐環112及邊緣環924在垂直向上的方向上被推離絕緣體環106,以供從電漿腔室移除支撐環112及邊緣環924。支撐環112及邊緣環924係加以移除以供支撐環112、或邊緣環924、或其組合的更換或維修。 As noted above, support ring 112 is physically connected to edge ring 924 via one or more fasteners. Pressure is created by the air below the lower surface of the piston body 916 when air is supplied to the lower portion of the cylinder 912 via the air fitting 914B. Due to the pressure generated below the lower surface of the piston body 916, the piston 922 moves in a vertically upward direction along the y-axis to push the compression rod 302A upward. When the compression rod 302A is pushed upward, the support ring 112 is lifted in a vertically upward direction relative to the insulator ring 106 . Concurrently with support ring 112 , edge ring 924 is also lifted in a vertically upward direction away from insulator ring 106 . The support ring 112 and the edge ring 924 are pushed away from the insulator ring 106 in a vertically upward direction for removal of the support ring 112 and the edge ring 924 from the plasma chamber. Support ring 112 and edge ring 924 are removed for replacement or repair of support ring 112, or edge ring 924, or a combination thereof.

另一方面,當空氣經由空氣配件914A供應至氣缸912的上部時,壓力係藉由活塞體916之上表面上方的空氣產生。由於在活塞體916之上表面上方產生的壓力,活塞922沿y軸在垂直向下的方向上運動以將壓緊桿302A向下拉。當壓緊桿302A被向下拉時,支撐環112相對於絕緣體環106在垂直向下的方向上被向下拉。與支撐環112同時,邊緣環924係亦在垂直向下的方向上朝絕緣體環106被向下拉。在置放在卡盤104上之基板的處理期間,支撐環112及邊緣環924係朝絕緣體環106被向下拉,以供置放在卡盤104上之基板的處理。 On the other hand, when air is supplied to the upper portion of the cylinder 912 via the air fitting 914A, pressure is generated by the air above the upper surface of the piston body 916 . Due to the pressure developed above the upper surface of the piston body 916, the piston 922 moves in a vertically downward direction along the y-axis to pull the compression rod 302A downward. When the compression rod 302A is pulled downward, the support ring 112 is pulled downward in a vertically downward direction relative to the insulator ring 106 . Simultaneously with the support ring 112, the edge ring 924 is also pulled down towards the insulator ring 106 in a vertically downward direction. During processing of a substrate placed on chuck 104 , support ring 112 and edge ring 924 are pulled down toward insulator ring 106 for processing of the substrate placed on chuck 104 .

圖5係扣緊機構920A之實施例的等角視圖。圖5中顯示的是螺釘910其中一者及安裝座604A。 Figure 5 is an isometric view of an embodiment of a fastening mechanism 920A. Shown in FIG. 5 is one of the screws 910 and the mount 604A.

圖6A是系統1100之實施例的圖,用於說明多個壓緊桿302A及302B(圖3A)的同步下拉。系統1100包含空氣路線1102A、扣緊機構920A、扣緊機構920B、及扣緊機構920C。扣緊機構920B及920C具有與扣緊機構920A相同 的結構及功能。作為示例,扣緊機構920A至920C各者具有雙動缸(double-acting cylinder)。扣緊機構920B係藉由安裝座連接至壓緊桿302B,而扣緊機構920C係藉由安裝座連接至壓緊桿。 FIG. 6A is a diagram of an embodiment of a system 1100 illustrating the simultaneous pulldown of multiple compression rods 302A and 302B (FIG. 3A). System 1100 includes air route 1102A, fastening mechanism 920A, fastening mechanism 920B, and fastening mechanism 920C. Fastening mechanisms 920B and 920C have the same structure and function. As an example, clasping mechanisms 920A- 920C each have a double-acting cylinder. The clasp mechanism 920B is connected to the compression rod 302B by a mount, and the clasp mechanism 920C is connected to the compression rod by a mount.

空氣路線如本文所述具有多個管,其中各者係由絕緣體材料製成,諸如塑膠及塑化劑的組合、或塑膠。空氣路線係撓性的而能夠連接至扣緊機構920A-920C的上部或下部。 The air route has multiple tubes as described herein, each of which is made of an insulator material, such as a combination of plastic and plasticizer, or plastic. The air lines are flexible and can be connected to upper or lower portions of the clasping mechanisms 920A-920C.

空氣路線1102A包含多個管1106A、1106B、1106C、1106D、及1106E。管1106A及1106D係藉由連接器C1連接至管1106B,而管1106B及1106E係藉由連接器C2連接至管1106C。此處描述之連接多個管的各連接器具有中空空間以允許經由該中空空間的空氣通路。作為示例,連接多個管的各連接器係皆由絕緣體材料製成。 Air route 1102A includes a plurality of tubes 1106A, 1106B, 1106C, 1106D, and 1106E. Tubes 1106A and 1106D are connected to tube 1106B by connector C1 , and tubes 1106B and 1106E are connected to tube 1106C by connector C2. Each of the connectors described herein connecting multiple tubes has a hollow space to allow the passage of air through the hollow space. As an example, each connector connecting the plurality of tubes is made of insulator material.

管1106D係藉由空氣配件914A(圖4)連接至扣緊機構920A的上部1104A。類似地,管1106E係藉由空氣配件(諸如空氣配件914A)連接至扣緊機構920B的上部1104C,而管1106C係藉由空氣配件(諸如空氣配件914A)連接至扣緊機構920C的上部1104E。 Tube 1106D is connected to upper portion 1104A of clasp mechanism 920A by air fitting 914A (FIG. 4). Similarly, tube 1106E is connected to upper portion 1104C of clasping mechanism 920B by an air fitting, such as air fitting 914A, and tube 1106C is connected to upper portion 1104E of clasping mechanism 920C by an air fitting, such as air fitting 914A.

空氣係經由管1106A、連接器C1、及管1106D供應至扣緊機構920A的上部1104A。類似地,空氣係經由管1106A、連接器C1、管1106B、連接器C2、及管1106E供應至扣緊機構920B的上部1104C。此外,空氣係經由管1106A、連接器C1、管1106B、連接器C2、及管1106C供應至扣緊機構920C的上部1104E。當空氣係供應至上部1104A、1104C、及1104E時,扣緊機構920A-920C的活塞係沿y軸同步(諸如同時)下拉以使支撐環112(圖4)及邊緣環924(圖4)朝絕緣體環106(圖4)運動。 Air is supplied to the upper portion 1104A of the clasping mechanism 920A via tube 1106A, connector C1 , and tube 1106D. Similarly, air is supplied to upper portion 1104C of clasping mechanism 920B via tube 1106A, connector C1 , tube 1106B, connector C2, and tube 1106E. In addition, air is supplied to the upper portion 1104E of the clasping mechanism 920C via tube 1106A, connector C1 , tube 1106B, connector C2, and tube 1106C. When air is supplied to upper portions 1104A, 1104C, and 1104E, the pistons of clasping mechanisms 920A-920C are synchronously (such as simultaneously) pulled down along the y-axis to move support ring 112 ( FIG. 4 ) and edge ring 924 ( FIG. 4 ) toward The insulator ring 106 (FIG. 4) moves.

如下所述,在功率銷208、壓緊桿302A及302B、及溫度探針軸周圍有多個筒密封件。這些筒形密封件沿y軸在垂直向上的方向上對支撐環112施 加力。扣緊機構920A-920C在垂直向上的方向上克服向上的力,以防止支撐環112在垂直方向上相對於卡盤向上抬升。此外,扣緊機構920A-920C對在邊緣環924與卡盤104之間的膠體層110B及110C(圖1及2)施加夾持力。雙動缸在垂直向上的方向上或在垂直向下的方向上對支撐環112施加與支撐環112之溫度無相依性的恆定力。 As described below, there are multiple cartridge seals around the power pin 208, the compression rods 302A and 302B, and the temperature probe shaft. These cartridge seals apply pressure to support ring 112 in a vertically upward direction along the y-axis. Afterburner. The clasp mechanisms 920A-920C overcome an upward force in a vertically upward direction to prevent the support ring 112 from lifting upwardly relative to the chuck in the vertical direction. Additionally, the clasping mechanisms 920A- 920C apply a clamping force to the gel layers 110B and 110C ( FIGS. 1 and 2 ) between the edge ring 924 and the chuck 104 . The double-acting cylinder exerts a constant force on the support ring 112 in a vertically upward direction or in a vertically downward direction independent of the temperature of the support ring 112 .

圖6B是系統1150之實施例的圖,用於說明多個壓緊桿302A及302B(圖3A)的同步上推。系統1150包含空氣路線1102B、扣緊機構920A、扣緊機構920B、及扣緊機構920C。 6B is a diagram of an embodiment of a system 1150 illustrating the simultaneous push-up of multiple compression rods 302A and 302B (FIG. 3A). System 1150 includes air route 1102B, fastening mechanism 920A, fastening mechanism 920B, and fastening mechanism 920C.

空氣路線1102B包含多個管1106F、1106G、1106H、1106I、及1106J。管1106F及1106I係藉由連接器C3連接至管1106G,而管1106G及1106J係藉由連接器C4連接至管1106H。管1106I係藉由空氣配件914B(圖4)連接至扣緊機構920A的下部1104B。類似地,管1106J係藉由空氣配件(諸如空氣配件914B)連接至扣緊機構920B的下部1104D,而管1106H係藉由空氣配件(諸如空氣配件914B)連接至扣緊機構920C的下部1104F。 Air route 1102B includes a plurality of tubes 1106F, 1106G, 1106H, 1106I, and 1106J. Tubes 1106F and 1106I are connected to tube 1106G by connector C3, and tubes 1106G and 1106J are connected to tube 1106H by connector C4. Tube 11061 is connected to lower portion 1104B of clasping mechanism 920A by air fitting 914B (FIG. 4). Similarly, tube 1106J is connected to lower portion 1104D of clasping mechanism 920B by an air fitting, such as air fitting 914B, and tube 1106H is connected to lower portion 1104F of clasping mechanism 920C by an air fitting, such as air fitting 914B.

空氣係經由管1106F、連接器C3、及管1106I供應至扣緊機構920A的下部1104B。類似地,空氣係經由管1106F、連接器C3、管1106G、連接器C4、及管1106J供應至扣緊機構920B的下部1104D。此外,空氣係經由管1106F、連接器C3、管1106G、連接器C4、及管1106H供應至扣緊機構920C的下部1104F。當空氣係供應至下部1104B、1104D、及1104F時,扣緊機構920A-920C的活塞係沿y軸同步(諸如同時)上推以使支撐環112(圖4)及邊緣環924(圖4)遠離絕緣體環106(圖4)而運動。 Air is supplied to the lower portion 1104B of the clasping mechanism 920A via tube 1106F, connector C3, and tube 1106I. Similarly, air is supplied to the lower portion 1104D of the clasping mechanism 920B via tube 1106F, connector C3, tube 1106G, connector C4, and tube 1106J. In addition, air is supplied to the lower portion 1104F of the clasping mechanism 920C via tube 1106F, connector C3, tube 1106G, connector C4, and tube 1106H. When air is supplied to lower portions 1104B, 1104D, and 1104F, the pistons of clasping mechanisms 920A-920C are pushed up synchronously (such as simultaneously) along the y-axis to support ring 112 ( FIG. 4 ) and edge ring 924 ( FIG. 4 ). Movement away from insulator ring 106 (FIG. 4).

圖7是系統1200之實施例的方塊圖,以說明將空氣供應至扣緊機構920A至920C。系統1200包含多個空氣壓縮器1202A和1202B、多個空氣壓力調節器1204A和1204B、多個孔口1206A和1206B、空氣路線1102A和1102B、及扣緊 機構920A至920C。空氣壓縮器1202A係藉由調節器1204A和孔口1206A及空氣路線1102A耦接至扣緊機構920A至920C的上部。類似地,空氣壓縮器1202B係藉由調節器1204B和孔口1206B及空氣路線1102B耦接至扣緊機構920A至920C的下部。 FIG. 7 is a block diagram of an embodiment of a system 1200 to illustrate the supply of air to the fastening mechanisms 920A-920C. System 1200 includes a plurality of air compressors 1202A and 1202B, a plurality of air pressure regulators 1204A and 1204B, a plurality of orifices 1206A and 1206B, air routes 1102A and 1102B, and fastening Mechanisms 920A to 920C. Air compressor 1202A is coupled to the upper portion of clasp mechanisms 920A-920C by regulator 1204A and orifice 1206A and air line 1102A. Similarly, air compressor 1202B is coupled to the lower portion of clasp mechanisms 920A-920C via regulator 1204B and orifice 1206B and air line 1102B.

空氣壓縮器1202A壓縮空氣以產生經壓縮的空氣。經壓縮的空氣係供應至空氣壓力調節器1204A。空氣壓力調節器1204A將經壓縮之空氣的壓力控制(諸如改變)成預定的空氣壓力,且將具有預定空氣壓力之經壓縮的空氣經由孔口1206A及空氣路線1102A供應至扣緊機構920A的上部。此處描述之預定空氣壓力之示例係28磅/平方英吋(psi)的空氣壓力。如本文所述之預定空氣壓力的其他示例是範圍在25psi與31psi之間的空氣壓力。 Air compressor 1202A compresses air to produce compressed air. Compressed air is supplied to air pressure regulator 1204A. The air pressure regulator 1204A controls (such as varies) the pressure of the compressed air to a predetermined air pressure, and supplies the compressed air having the predetermined air pressure to the upper portion of the clasp mechanism 920A via the orifice 1206A and the air route 1102A . An example of a predetermined air pressure described herein is an air pressure of 28 pounds per square inch (psi). Other examples of predetermined air pressures as described herein are air pressures ranging between 25 psi and 31 psi.

類似地,空氣壓縮器1202B壓縮空氣以產生經壓縮的空氣。經壓縮的空氣係供應至空氣壓力調節器1204B。空氣壓力調節器1204B將經壓縮之空氣的壓力控制(諸如改變)成預定的空氣壓力,且將具有預定空氣壓力之經壓縮的空氣經由孔口1206B及空氣路線1102B供應至扣緊機構920B的下部。 Similarly, air compressor 1202B compresses air to produce compressed air. Compressed air is supplied to air pressure regulator 1204B. The air pressure regulator 1204B controls (such as varies) the pressure of the compressed air to a predetermined air pressure, and supplies the compressed air having the predetermined air pressure to the lower portion of the fastening mechanism 920B through the orifice 1206B and the air route 1102B .

圖8A係邊緣環228之實施例的等角視圖。邊緣環228具有頂表面1604。圖8A說明在邊緣環228之底表面1612內形成之多個緊固件孔124A、124B、及124C的透視圖。 FIG. 8A is an isometric view of an embodiment of an edge ring 228 . The edge ring 228 has a top surface 1604 . FIG. 8A illustrates a perspective view of a plurality of fastener holes 124A, 124B, and 124C formed within the bottom surface 1612 of the edge ring 228 .

在一些實施例中,使任何其他數目的緊固件孔(諸如六或九個緊固件孔)在底表面1612內形成,以供用於將相同數目的緊固件裝配在各個孔內。舉例而言,在邊緣環228之底表面1612內形成之一組的兩個毗鄰孔之間的距離係與在邊緣環228之底表面1612內形成之另一組的兩個毗鄰孔之間的距離相同。為了說明,該組的兩個毗鄰孔之其中任一者與該另一組的兩個毗鄰孔之其中一者相同或不相同。 In some embodiments, any other number of fastener holes, such as six or nine fastener holes, are formed in bottom surface 1612 for fitting the same number of fasteners within each hole. For example, the distance between two adjacent holes of one set formed in the bottom surface 1612 of the edge ring 228 is the distance between two adjacent holes of another set formed in the bottom surface 1612 of the edge ring 228. The distance is the same. For purposes of illustration, any one of the two adjacent holes of the set may or may not be the same as one of the other set of two adjacent holes.

圖8B係邊緣環228之實施例的頂視圖。邊緣環228具有內直徑ID1及外直徑OD1。外直徑OD1之範圍從約13.6英吋(含)至約15英吋。作為另一示例,外直徑OD1之範圍從約13.6英吋(含)至約16英吋。作為又另一示例,外直徑OD1之範圍從約12英吋(含)至約18英吋。當外直徑OD1超過13.6英吋(諸如大於14英吋或接近15英吋)時,在邊緣環228與蓋環118間之RF功率之電弧放電的可能性降低。內直徑ID1係邊緣環228之內周緣的直徑,而外直徑OD1係邊緣環228之外周緣的直徑。頂表面1604在邊緣環228的頂視圖中係可見的。 FIG. 8B is a top view of an embodiment of edge ring 228 . Edge ring 228 has an inner diameter ID1 and an outer diameter OD1 . The outside diameter OD1 ranges from about 13.6 inches inclusive to about 15 inches. As another example, the outer diameter OD1 ranges from about 13.6 inches inclusive to about 16 inches. As yet another example, the outer diameter OD1 ranges from about 12 inches inclusive to about 18 inches. When the outer diameter OD1 exceeds 13.6 inches, such as greater than 14 inches or closer to 15 inches, the likelihood of arcing from RF power between the edge ring 228 and the cover ring 118 is reduced. The inner diameter ID1 is the diameter of the inner periphery of the edge ring 228 and the outer diameter OD1 is the diameter of the outer periphery of the edge ring 228 . Top surface 1604 is visible in a top view of edge ring 228 .

圖8C係沿圖8B中描繪之A-A橫剖面之邊緣環228的橫剖面圖。邊緣環228具有頂表面1604(在本文有時被稱為頂側)及底表面1612(其在本文有時被稱為底側)。頂表面1604及底表面1612其中各者係皆水平定向的表面。頂表面1604在本文有時被稱為頂側。邊緣環228進一步具有內表面1620(在本文有時被稱為內側)及外表面1614(其在本文有時被稱為外側)。外表面1614係垂直定向的表面。應注意邊緣環228具有環形體,諸如圓形體、或環形體、或盤形體。 Figure 8C is a cross-sectional view of the edge ring 228 along the A-A cross-section depicted in Figure 8B. The edge ring 228 has a top surface 1604 (sometimes referred to herein as the top side) and a bottom surface 1612 (which is sometimes referred to herein as the bottom side). Each of the top surface 1604 and the bottom surface 1612 are horizontally oriented surfaces. Top surface 1604 is sometimes referred to herein as the top side. The edge ring 228 further has an inner surface 1620 (sometimes referred to herein as the inner side) and an outer surface 1614 (which is sometimes referred to herein as the outer side). Outer surface 1614 is a vertically oriented surface. It should be noted that the edge ring 228 has an annular body, such as a circular body, or an annular body, or a disc-shaped body.

邊緣環228具有台階1622,該台階1622包含呈角度的內表面1606及水平定向的內表面1608。呈角度的內表面1606形成角度A2,該角度A2相對於垂直定向的內表面1610係約15°或約50°。在一實施例中,角度A2的範圍在約5°和約55°之間。在另一實施例中,角度A2的範圍在約12°和約20°之間。在又另一實施例中,角度A2的範圍在約10°與約20°之間。呈角度的內表面1606係與頂表面1604鄰接。舉例而言,呈角度的內表面1606相對於頂表面1604形成半徑R3。為了說明,半徑R3最大係約0.01英吋。舉例而言,具有半徑R3的曲線係在呈角度的內表面1606與頂表面1604之間形成。作為示例,半徑R3之範圍從約0.009英吋(含)至約0.011英吋。 Edge ring 228 has a step 1622 that includes an angled inner surface 1606 and a horizontally oriented inner surface 1608 . The angled inner surface 1606 forms an angle A2 that is about 15° or about 50° relative to the vertically oriented inner surface 1610 . In one embodiment, angle A2 ranges between about 5° and about 55°. In another embodiment, angle A2 ranges between about 12° and about 20°. In yet another embodiment, angle A2 ranges between about 10° and about 20°. The angled inner surface 1606 adjoins the top surface 1604 . For example, angled inner surface 1606 forms a radius R3 relative to top surface 1604 . For purposes of illustration, radius R3 is at most about 0.01 inches. For example, a curve having a radius R3 is formed between the angled inner surface 1606 and the top surface 1604 . As an example, radius R3 ranges from about 0.009 inches (inclusive) to about 0.011 inches.

水平定向的內表面1608係與呈角度的內表面1606鄰接。舉例而言,水平定向的內表面1608相對於呈角度的內表面1606形成半徑R4。為了說明, 半徑R4係約0.032英吋。舉例而言,具有半徑R4的曲線在水平定向的內表面1608與呈角度的內表面1606之間形成。作為示例,半徑R4之範圍從約0.003英吋(含)至約0.0034英吋。邊緣環228上形成半徑R4之位置的中間直徑(MD)係約11.858英吋。舉例而言,中間直徑之範圍從約11.856英吋(含)至約11.86英吋。 Horizontally oriented inner surface 1608 adjoins angled inner surface 1606 . For example, horizontally oriented inner surface 1608 forms a radius R4 relative to angled inner surface 1606 . To illustrate, Radius R4 is approximately 0.032 inches. For example, a curved line having radius R4 is formed between horizontally oriented inner surface 1608 and angled inner surface 1606 . As an example, radius R4 ranges from about 0.003 inches (inclusive) to about 0.0034 inches. The median diameter (MD) of edge ring 228 where radius R4 is formed is about 11.858 inches. For example, the median diameter ranges from about 11.856 inches inclusive to about 11.86 inches.

如本文所述之水平定向的表面係實質平行於x軸,而如本文所述之垂直定向的表面係實質平行於y軸。舉例而言,水平定向的表面相對於x軸形成範圍從-5°至+5°的角度,而垂直定向的表面相對於y軸形成範圍從-5°至+5°的角度。為了說明,水平定向的表面係平行於x軸且垂直於y軸,而垂直定向的表面係平行於y軸且垂直於x軸。如本文所述之呈角度的表面係非垂直定向的表面亦非水平定向的表面。 A horizontally oriented surface as described herein is substantially parallel to the x-axis, and a vertically oriented surface as described herein is substantially parallel to the y-axis. For example, horizontally oriented surfaces form an angle ranging from -5° to +5° relative to the x-axis, while vertically oriented surfaces form an angle ranging from -5° to +5° relative to the y-axis. To illustrate, a horizontally oriented surface is parallel to the x-axis and perpendicular to the y-axis, while a vertically-oriented surface is parallel to the y-axis and perpendicular to the x-axis. An angled surface as described herein is a surface that is neither vertically oriented nor horizontally oriented.

水平定向的內表面1608係藉由呈角度的內表面1606與頂表面1604分開。舉例而言,呈角度的內表面1606係毗鄰頂表面1604及水平定向的內表面1608,但水平定向的內表面1608不毗鄰頂表面1604。 Horizontally oriented inner surface 1608 is separated from top surface 1604 by angled inner surface 1606 . For example, angled inner surface 1606 is adjacent to top surface 1604 and horizontally oriented inner surface 1608 , but horizontally oriented inner surface 1608 is not adjacent to top surface 1604 .

此外,內表面1620具有垂直定向的內表面1610,該內表面1610係與水平定向的內表面1608鄰接。舉例而言,垂直定向的內表面1610相對於水平定向的內表面1608形成半徑R5。為了說明,具有半徑R5的曲線係在垂直定向的內表面1610與水平定向的內表面1608之間形成。作為示例,半徑R5係約0.012英吋。為了說明,半徑R5之範圍從約0.007英吋(含)至約0.017英吋。沿y軸之垂直定向的內表面1610之距離d3係約0.0169英吋。舉例而言,距離d3之範圍從約0.0164英吋(含)至約0.0174英吋。垂直定向表面之距離係在垂直定向表面的垂直方向上沿y軸的長度。此外,水平定向表面之距離係在水平方向上沿x軸之水平定向表面的寬度。此外,呈角度表面之距離係在沿y軸的垂直方向上測量。垂直定向的內表面1610具有大約11.7英吋的內直徑ID1。舉例而言,內直徑ID1的範圍從約11英吋(含)至約12.4英吋。 Additionally, inner surface 1620 has a vertically oriented inner surface 1610 that adjoins horizontally oriented inner surface 1608 . For example, vertically oriented inner surface 1610 forms a radius R5 relative to horizontally oriented inner surface 1608 . To illustrate, a curved line having radius R5 is formed between vertically oriented inner surface 1610 and horizontally oriented inner surface 1608 . As an example, radius R5 is about 0.012 inches. To illustrate, radius R5 ranges from about 0.007 inches (inclusive) to about 0.017 inches. The distance d3 of the vertically oriented inner surface 1610 along the y-axis is about 0.0169 inches. For example, distance d3 ranges from about 0.0164 inches (inclusive) to about 0.0174 inches. The distance of the vertically oriented surface is the length along the y-axis in a direction perpendicular to the vertically oriented surface. In addition, the distance of the horizontally oriented surface is the width of the horizontally oriented surface along the x-axis in the horizontal direction. In addition, the distance of the angled surfaces is measured in the vertical direction along the y-axis. Vertically oriented inner surface 1610 has an inner diameter ID1 of approximately 11.7 inches. For example, the inner diameter ID1 ranges from about 11 inches (inclusive) to about 12.4 inches.

此外,內表面1620具有呈角度的內表面1618,該呈角度的內表面1618相對於垂直定向的內表面1610及底表面1612呈角度。呈角度的內表面1618係與垂直定向的內表面1610鄰接。舉例而言,呈角度的內表面1618相對於垂直定向的內表面1610形成半徑R6。為了說明,具有半徑R6的曲線係在呈角度的內表面1618與垂直定向的內表面1610之間形成。作為示例,半徑R6係約0.015英吋。為了說明,半徑R6之範圍從約0.0149英吋(含)至約0.0151英吋。此外,呈角度的內表面1618係與底表面1612鄰接。舉例而言,呈角度的內表面1618相對於底表面1612形成半徑R7。為了說明,具有半徑R7的曲線係在呈角度的內表面1618與底表面1612之間形成。作為示例,半徑R7係約半徑R6的兩倍。為了說明,半徑R6之範圍從約2×0.0149英吋(含)至約2×0.0151英吋。 Additionally, inner surface 1620 has an angled inner surface 1618 that is angled relative to vertically oriented inner surface 1610 and bottom surface 1612 . The angled inner surface 1618 adjoins the vertically oriented inner surface 1610 . For example, angled inner surface 1618 forms a radius R6 relative to vertically oriented inner surface 1610 . To illustrate, a curved line having a radius R6 is formed between the angled inner surface 1618 and the vertically oriented inner surface 1610 . As an example, radius R6 is about 0.015 inches. To illustrate, radius R6 ranges from about 0.0149 inches (inclusive) to about 0.0151 inches. Additionally, an angled inner surface 1618 adjoins bottom surface 1612 . For example, angled inner surface 1618 forms a radius R7 relative to bottom surface 1612 . To illustrate, a curved line having a radius R7 is formed between the angled inner surface 1618 and the bottom surface 1612 . As an example, radius R7 is about twice radius R6. To illustrate, radius R6 ranges from about 2 x 0.0149 inches inclusive to about 2 x 0.0151 inches.

呈角度的內表面1618具有約0.035英吋的長度d2。舉例而言,長度d2之範圍從約0.0345英吋(含)至約0.0355英吋。呈角度的內表面1618相對於垂直定向的內表面1610形成約30°的角度A1。舉例而言,角度A1之範圍從約28°(含)至約32°。應注意呈角度的內表面1606、水平定向的內表面1608、垂直定向的內表面1610、及呈角度的內表面1618之組合在本文有時被稱為邊緣環228的內側。 Angled inner surface 1618 has a length d2 of about 0.035 inches. For example, length d2 ranges from about 0.0345 inches (inclusive) to about 0.0355 inches. Angled inner surface 1618 forms an angle A1 of about 30° relative to vertically oriented inner surface 1610 . For example, angle A1 ranges from about 28° (inclusive) to about 32°. It should be noted that the combination of angled inner surface 1606 , horizontally oriented inner surface 1608 , vertically oriented inner surface 1610 , and angled inner surface 1618 is sometimes referred to herein as the inner side of edge ring 228 .

外表面1614係與底表面1612鄰接,諸如毗鄰底表面1612或與底表面1612接續。舉例而言,外表面1614相對於底表面1612形成半徑R2。為了說明,具有半徑R2的曲線係在外表面1614與底表面1612之間形成。作為示例,半徑R2係約0.012英吋。為了說明,半徑R2之範圍在0.0119英吋與0.0121英吋之間。 Outer surface 1614 is contiguous with bottom surface 1612 , such as adjacent to or continuous with bottom surface 1612 . For example, outer surface 1614 forms a radius R2 relative to bottom surface 1612 . To illustrate, a curve having radius R2 is formed between outer surface 1614 and bottom surface 1612 . As an example, radius R2 is about 0.012 inches. To illustrate, radius R2 ranges between 0.0119 inches and 0.0121 inches.

邊緣環228包含在邊緣環228的頂表面1604與外表面1614間形成之彎曲的邊緣1616。舉例而言,彎曲的邊緣1616係毗鄰頂表面1604及外表面1614,諸如位在頂表面1604及外表面1614旁邊。彎曲的邊緣1616具有半徑R1。舉例而言,半徑R1係約0.1英吋。為了說明,半徑R1之範圍在0.8英吋與0.12英吋之間。彎曲的邊緣1616之曲率減少邊緣環228與蓋環201間之RF功率之電弧放電的 可能性。電弧放電發生於當電漿在電漿腔室之內形成及維持之時。尖銳的邊緣增加電弧放電的可能性。沿y軸之彎曲的邊緣1616之高度及沿y軸之外表面1614之長度的垂直距離之總和的距離d1係約0.23英吋。作為示例,距離d1之範圍從約0.229英吋(含)至約0.231英吋。作為示例,外表面1614具有約14.06英吋的外直徑OD1,外直徑OD1之範圍在13.5英吋與14.5英吋之間。應注意本文描述之邊緣環的內直徑或外直徑或中間直徑係相對於穿過邊緣環之質心的中心軸線形成。 Edge ring 228 includes a curved edge 1616 formed between top surface 1604 and outer surface 1614 of edge ring 228 . For example, curved edge 1616 is adjacent to top surface 1604 and outer surface 1614 , such as beside top surface 1604 and outer surface 1614 . Curved edge 1616 has a radius R1. For example, radius R1 is about 0.1 inches. For purposes of illustration, radius R1 ranges between 0.8 inches and 0.12 inches. The curvature of the curved edge 1616 reduces the risk of arcing of RF power between the edge ring 228 and the cover ring 201. possibility. Arcing occurs when a plasma is formed and maintained within a plasma chamber. Sharp edges increase the possibility of arcing. The distance d1 of the sum of the height of the curved edge 1616 along the y-axis and the perpendicular distance along the length of the outer surface 1614 along the y-axis is about 0.23 inches. As an example, distance d1 ranges from about 0.229 inches (inclusive) to about 0.231 inches. As an example, outer surface 1614 has an outer diameter OD1 of about 14.06 inches, with outer diameter OD1 ranging between 13.5 inches and 14.5 inches. It should be noted that the inner diameter or outer diameter or intermediate diameter of the edge ring described herein is formed relative to a central axis passing through the centroid of the edge ring.

應注意此處描述的邊緣環係可消耗的。舉例而言,在邊緣環的多次使用以用於處理基板之後,邊緣環可能耗損。為了說明,殘餘材料係在用以處理基板的電漿之後輸出,且殘餘材料腐蝕邊緣環。此外,電漿腐蝕邊緣環。 It should be noted that the edge loops described here are consumable. For example, after multiple uses of an edge ring for processing substrates, the edge ring may wear out. To illustrate, the residual material was output after the plasma used to process the substrate, and the residual material etched the edge ring. In addition, the plasma corrodes the edge rings.

此外,邊緣環係可更換的。舉例而言,在重複使用邊緣環之後,更換邊緣環。為了說明,使用圖3A的壓緊桿302A及302B將邊緣環垂直向上推遠離絕緣體環106(圖2)以自圖1及2的絕緣體環106釋放。邊緣環係接著以另一邊緣環替換。接著使用壓緊桿302A及302B將其他邊緣環朝絕緣體環106垂直向下拉以供處理基板或另一基板。 Furthermore, the edge rings are replaceable. For example, after the edge ring is reused, the edge ring is replaced. To illustrate, the edge ring is pushed vertically up and away from the insulator ring 106 ( FIG. 2 ) using the compression bars 302A and 302B of FIG. 3A to release from the insulator ring 106 of FIGS. 1 and 2 . The edge ring is then replaced with another edge ring. The other edge rings are then pulled vertically down toward the insulator ring 106 using the compression rods 302A and 302B for processing the substrate or another substrate.

在一些實施例中,邊緣環228之邊緣的各半徑R1至R7係大於約0.03英吋,以減少朝向邊緣或遠離邊緣之RF功率之電弧放電的可能性。為了進一步說明,邊緣環228之邊緣的各半徑R1至R7的範圍從約0.03英吋(含)至約0.1英吋,以減少朝向邊緣或遠離邊緣之RF功率之電弧放電的可能性。應注意在諸多實施例中,各半徑R1至R7係大於從約0.01英吋(含)至約0.03英吋的範圍。從約0.01英吋(含)至約0.03英吋的半徑減少在半導體晶圓的製造期間之半徑的邊緣碎裂的可能性。 In some embodiments, each radius R1-R7 of the edge of edge ring 228 is greater than about 0.03 inches to reduce the possibility of arcing from RF power toward or away from the edge. To further illustrate, each radius R1-R7 of the edge of edge ring 228 ranges from about 0.03 inches inclusive to about 0.1 inches to reduce the possibility of arcing from RF power toward or away from the edge. It should be noted that in many embodiments, each radius R1 to R7 is greater than a range from about 0.01 inches (inclusive) to about 0.03 inches. A radius from about 0.01 inches (inclusive) to about 0.03 inches reduces the likelihood of edge chipping of the radii during fabrication of semiconductor wafers.

在一實施例中,邊緣環228具有複數邊緣。在一實施例中,界定邊緣環228的邊緣係加以圓化。舉例而言,邊緣環228之具有半徑RA及RC(如下面圖9E所示)的邊緣係圓化成約0.03英吋或更大的半徑。已確定當電漿腔室在操作 中時,這些邊緣的較低圓化程度可能不足以防止或減少RF功率之電弧放電的可能性。受電漿腔室內較尖銳之特徵部邊緣所影響,電弧放電之可能性的減少可能對在半導體晶圓上及上方執行的製造製程有害。輕微的邊緣圓化(例如小於約0.03英吋的各半徑RA及RC(如下面圖9E所示),各半徑RA及RC(如下面圖9E所示)之範圍從約0.01英吋(含)至約0.03英吋),有助於減少半導體晶圓的製造期間之顆粒產生、或製造期間邊緣碎裂的可能性。因此,儘管在配置於電漿腔室內之特徵部(例如半徑RA及RC(如下面圖9E所示))的表面上執行一些圓化,有鑑於電漿處理操作中所使用之增加的功率位準,此圓化程度係小於用於防止或減少電弧放電的圓化程度。 In one embodiment, the edge ring 228 has a plurality of edges. In one embodiment, the edges defining edge ring 228 are rounded. For example, the edges of edge ring 228 having radii RA and RC (shown in FIG. 9E below) are rounded to a radius of about 0.03 inches or greater. determined when the plasma chamber is operating When moderate, the lower degree of rounding of these edges may not be sufficient to prevent or reduce the possibility of arcing from RF power. Due to the sharper feature edges within the plasma chamber, the reduced likelihood of arcing can be detrimental to manufacturing processes performed on and above the semiconductor wafer. Slight edge rounding (e.g. less than about 0.03 inches each of radii RA and RC (as shown below in Figure 9E), each of radii RA and RC (as shown below in Figure 9E) ranging from about 0.01 inches inclusive to about 0.03 inches), which helps reduce particle generation during the fabrication of semiconductor wafers, or the possibility of edge chipping during fabrication. Thus, although some rounding is performed on the surface of features disposed within the plasma chamber, such as radii RA and RC (as shown below in FIG. 9E ), given the increased power levels used in plasma processing operations To be precise, this degree of rounding is less than the degree of rounding used to prevent or reduce arcing.

圖8D是系統1650之實施例的圖,以說明緊固件122對邊緣環228之耦合。邊緣環228的橫剖面圖係沿圖8A中所示的橫剖面a-a取得。在邊緣環228的底表面1612內鑽孔得到槽125。除了將槽125鑽孔之外,螺紋1652係在槽125的側表面SS上形成。側表面SS係實質垂直的,諸如相對於槽125的頂表面TS垂直或在85°與95°之間的範圍。槽125包圍緊固件孔124A。 FIG. 8D is a diagram of an embodiment of a system 1650 to illustrate the coupling of fastener 122 to edge ring 228 . The cross-sectional view of the edge ring 228 is taken along the cross-section a-a shown in FIG. 8A. Grooves 125 are drilled into bottom surface 1612 of edge ring 228 . In addition to drilling the slot 125, threads 1652 are formed on the side surface SS of the slot 125. Side surface SS is substantially vertical, such as vertical or ranging between 85° and 95° relative to top surface TS of slot 125 . Slot 125 surrounds fastener hole 124A.

緊固件122具有在緊固件122的尖端處形成的螺紋1654。此外,緊固件122具有在螺紋1654下方的主體1658。緊固件122的頭部1660係位在主體1658下方。 The fastener 122 has threads 1654 formed at the tip of the fastener 122 . Additionally, fastener 122 has a body 1658 underlying threads 1654 . The head 1660 of the fastener 122 is tied below the body 1658 .

緊固件122係插入至緊固件孔124A且係以順時針方向轉動以使螺紋1654與螺紋1652接合而將支撐環112(圖1)與邊緣環228連接。類似地,額外的緊固件(諸如緊固件122)係插入至多個緊固件孔124B及124C以將支撐環112與邊緣環228連接。多個緊固件孔124B及124C係在邊緣環228之底表面1612內的各個槽中形成。舉例而言,緊固件孔124A-124C在邊緣環228之底表面1612的水平面內形成等邊三角形的頂點。在多於三個緊固件孔係在底表面1612內形成的情況下,緊固件孔係位在實質相等(諸如相等)的距離處。舉例而言,在底表面 1612內之一組兩個毗鄰的緊固件孔之間的距離係與在底表面1612內之另一組兩個毗鄰的緊固件孔之間的距離相同。當該組的緊固件孔之其中至少一者係不與另一組之緊固件孔的其中一者相同時,一組的兩個緊固件孔係不同於另一組的兩個緊固件孔。為了說明,兩組不同的緊固件孔具有至少一個不常見的緊固件孔。作為另一示例,在底表面1612內,該組之兩毗鄰緊固件孔之間的距離係在自另一組兩毗鄰緊固件孔之間的距離之預定限度內。當支撐環112係與邊緣環228連接且邊緣環228或支撐環112係加以運動時,邊緣環228及支撐環112在沿y軸的垂直方向上或在沿x軸的水平方向上同時運動。 Fastener 122 is inserted into fastener hole 124A and turned in a clockwise direction to engage threads 1654 with threads 1652 to connect support ring 112 ( FIG. 1 ) with edge ring 228 . Similarly, additional fasteners, such as fastener 122 , are inserted into fastener holes 124B and 124C to connect support ring 112 with edge ring 228 . A plurality of fastener holes 124B and 124C are formed in respective slots in bottom surface 1612 of edge ring 228 . For example, fastener holes 124A- 124C form the vertices of an equilateral triangle in the horizontal plane of bottom surface 1612 of edge ring 228 . Where more than three fastener holes are formed in the bottom surface 1612, the fastener holes are located at substantially equal, such as equal, distances. For example, on the bottom surface The distance between one set of two adjacent fastener holes in 1612 is the same as the distance between the other set of two adjacent fastener holes in bottom surface 1612 . When at least one of the fastener holes of the set is not identical to one of the fastener holes of the other set, the two fastener holes of one set are different from the two fastener holes of the other set. To illustrate, two different sets of fastener holes have at least one unusual fastener hole. As another example, within the bottom surface 1612, the distance between the set of two adjacent fastener holes is within a predetermined limit from the distance between the other set of two adjacent fastener holes. When support ring 112 is connected to edge ring 228 and either edge ring 228 or support ring 112 is moved, edge ring 228 and support ring 112 move simultaneously either vertically along the y-axis or horizontally along the x-axis.

圖9A係蓋環202之實施例的等角視圖。在一些實施例中,使用蓋環202代替圖2的蓋環201。蓋環202具有頂表面1704。應注意此處描述的蓋環係可消耗的。舉例而言,在處理基板期間多次使用蓋環之後,蓋環可能耗損。為了說明,由於藉由電漿處理基板,故產生殘餘材料且殘餘材料腐蝕蓋環。此外,電漿腐蝕蓋環。 FIG. 9A is an isometric view of an embodiment of a cover ring 202 . In some embodiments, cover ring 202 is used instead of cover ring 201 of FIG. 2 . The cover ring 202 has a top surface 1704 . It should be noted that the cover rings described here are consumable. For example, after multiple uses of the cover ring during processing of the substrate, the cover ring may wear out. To illustrate, since the substrate is processed by the plasma, residual material is generated and corrodes the cover ring. Additionally, the plasma corrodes the cover ring.

此外,蓋環係可更換的。舉例而言,在重複使用蓋環之後,更換蓋環。為了說明,蓋環係自電漿腔室移除以供使用另一蓋環替換。 Furthermore, the cover ring is replaceable. For example, after reusing the cover ring, the cover ring is replaced. For illustration, the cover ring is removed from the plasma chamber for replacement with another cover ring.

圖9B係蓋環202之實施例的底視圖。蓋環具有底表面1705。 FIG. 9B is a bottom view of an embodiment of the cover ring 202 . The cover ring has a bottom surface 1705 .

圖9C係蓋環202之實施例的頂視圖。蓋環202具有內直徑ID2及寬度W1。內直徑ID2係蓋環202之內周緣的直徑。寬度W1係蓋環202的環形體在蓋環202的內直徑ID2與外直徑之間的寬度。 FIG. 9C is a top view of an embodiment of cover ring 202 . Cover ring 202 has an inner diameter ID2 and a width W1. The inner diameter ID2 is the diameter of the inner periphery of the cover ring 202 . The width W1 is the width of the annular body of the cover ring 202 between the inner diameter ID2 and the outer diameter of the cover ring 202 .

圖9D係沿圖9C的橫剖面A-A取得之蓋環202之實施例的橫剖面圖。蓋環202具有垂直定向的內表面1724、另一垂直定向的內表面1720、垂直定向的外表面1716、另一垂直定向的外表面1714、及垂直定向的外表面1710。垂直定向的內表面1724之直徑係ID2。直徑ID2係約13.615英吋。舉例而言,直徑ID2之範圍從約13.4英吋(含)至約13.8英吋。此外,垂直定向的內表面1720之直徑 係D1。直徑D1係約13.91英吋。舉例而言,直徑D1之範圍從約13.8英吋(含)至約14英吋。此外,垂直定向的外表面1716之直徑係D2。直徑D2係約14.21英吋。舉例而言,直徑D2之範圍從約14英吋(含)至約14.5英吋。垂直定向的外表面1714之直徑係D3且垂直定向的外表面1710之直徑係OD2。直徑D3係約14.38英吋。舉例而言,直徑D3之範圍從約14.2英吋(含)至約14.5英吋。直徑OD2係約14.7英吋。舉例而言,直徑OD2之範圍從約14英吋(含)至約15英吋。 Figure 9D is a cross-sectional view of an embodiment of the cover ring 202 taken along cross-section A-A of Figure 9C. The cover ring 202 has a vertically oriented inner surface 1724 , another vertically oriented inner surface 1720 , a vertically oriented outer surface 1716 , another vertically oriented outer surface 1714 , and a vertically oriented outer surface 1710 . The diameter of the vertically oriented inner surface 1724 is ID2. Diameter ID2 is approximately 13.615 inches. For example, diameter ID2 ranges from about 13.4 inches inclusive to about 13.8 inches. In addition, the diameter of the vertically oriented inner surface 1720 Department D1. Diameter D1 is about 13.91 inches. For example, diameter D1 ranges from about 13.8 inches (inclusive) to about 14 inches. Additionally, the diameter of the vertically oriented outer surface 1716 is D2. Diameter D2 is approximately 14.21 inches. For example, diameter D2 ranges from about 14 inches (inclusive) to about 14.5 inches. The diameter of vertically oriented outer surface 1714 is D3 and the diameter of vertically oriented outer surface 1710 is OD2. Diameter D3 is about 14.38 inches. For example, diameter D3 ranges from about 14.2 inches inclusive to about 14.5 inches. The diameter OD2 is about 14.7 inches. For example, the diameter OD2 ranges from about 14 inches inclusive to about 15 inches.

直徑D1係大於直徑ID2。此外,直徑D2係大於直徑D1,而直徑D3係大於直徑D2。直徑OD2係大於直徑D3。 Diameter D1 is larger than diameter ID2. Furthermore, diameter D2 is larger than diameter D1, and diameter D3 is larger than diameter D2. The diameter OD2 is larger than the diameter D3.

圖9E係蓋環202之實施例的橫剖面圖。蓋環202包含上主體部分1730、中間主體部分1732、及下主體部分1734。上主體部分1730具有垂直定向的外表面1710、水平定向的外表面1712、另一水平定向的內表面1722、垂直定向的內表面1724、及水平定向的頂表面1704。彎曲的邊緣1706係在垂直定向的外表面1710與頂表面1704之間形成。彎曲的邊緣1706具有約0.06英吋的半徑RC。舉例而言,半徑RC之範圍從約0.059英吋(含)至約0.061英吋。彎曲的邊緣1706係與頂表面1704及垂直定向的外表面1710鄰接,諸如與頂表面1704及垂直定向的外表面1710接續或毗鄰。 FIG. 9E is a cross-sectional view of an embodiment of the cover ring 202 . Cover ring 202 includes upper body portion 1730 , middle body portion 1732 , and lower body portion 1734 . Upper body portion 1730 has a vertically oriented outer surface 1710 , a horizontally oriented outer surface 1712 , another horizontally oriented inner surface 1722 , a vertically oriented inner surface 1724 , and a horizontally oriented top surface 1704 . A curved edge 1706 is formed between vertically oriented outer surface 1710 and top surface 1704 . Curved edge 1706 has a radius RC of about 0.06 inches. For example, radius RC ranges from about 0.059 inches (inclusive) to about 0.061 inches. Curved edge 1706 is contiguous, such as contiguous with or adjacent to top surface 1704 and vertically oriented outer surface 1710 .

垂直定向的外表面1710係與水平定向的外表面1712鄰接。舉例而言,具有半徑RD的曲線係在垂直定向的外表面1710與水平定向的外表面1712之間形成。半徑RD係約0.015英吋。舉例而言,半徑RD之範圍從約0.0145英吋(含)至約0.0155英吋。 Vertically oriented outer surface 1710 is adjoined by horizontally oriented outer surface 1712 . For example, a curve having a radius RD is formed between the vertically oriented outer surface 1710 and the horizontally oriented outer surface 1712 . Radius RD is about 0.015 inches. For example, radius RD ranges from about 0.0145 inches (inclusive) to about 0.0155 inches.

此外,水平定向的內表面1722係與垂直定向的內表面1724鄰接。舉例而言,具有半徑RK的曲線係在垂直定向的內表面1724與水平定向的內表面1722之間形成。為了說明,半徑RK係約0.015英吋。作為示例,半徑RK之範圍從約0.0145英吋(含)至約0.0155英吋。 Additionally, the horizontally-oriented inner surface 1722 adjoins the vertically-oriented inner surface 1724 . For example, a curved line having a radius RK is formed between the vertically oriented inner surface 1724 and the horizontally oriented inner surface 1722 . For purposes of illustration, the radius RK is about 0.015 inches. As an example, radius RK ranges from about 0.0145 inches (inclusive) to about 0.0155 inches.

此外,頂表面1704係與垂直定向的內表面1724鄰接。舉例而言,具有半徑RA的曲線係在垂直定向的內表面1724與頂表面1704之間形成。為了說明,半徑RA係約0.015英吋。作為例子,半徑RA之範圍從約0.0145英吋(含)至約0.0155英吋。半徑RA減少蓋環202與邊緣環228間之RF功率之電弧放電的可能性。電弧放電發生在電漿形成於電漿腔室內的期間。 Additionally, the top surface 1704 is adjoined by a vertically oriented inner surface 1724 . For example, a curve having a radius RA is formed between the vertically oriented inner surface 1724 and the top surface 1704 . For purposes of illustration, radius RA is about 0.015 inches. As an example, radius RA ranges from about 0.0145 inches (inclusive) to about 0.0155 inches. Radius RA reduces the likelihood of arcing of RF power between cover ring 202 and edge ring 228 . Arcing occurs during the formation of plasma within the plasma chamber.

中間主體部分1732包含垂直定向的內表面1720、垂直定向的外表面1714、及水平定向的外表面1719。垂直定向的外表面1714係與上主體部分1730之水平定向的外表面1712鄰接。舉例而言,具有半徑RE的曲線係在垂直定向的外表面1714與水平定向的外表面1712之間形成。作為示例,半徑RE係約0.03英吋。為了說明,半徑RE之範圍從約0.029英吋(含)至約0.31英吋。 Intermediate body portion 1732 includes a vertically oriented inner surface 1720 , a vertically oriented outer surface 1714 , and a horizontally oriented outer surface 1719 . Vertically-oriented outer surface 1714 is contiguous with horizontally-oriented outer surface 1712 of upper body portion 1730 . For example, a curved line having a radius RE is formed between the vertically oriented outer surface 1714 and the horizontally oriented outer surface 1712 . As an example, the radius RE is about 0.03 inches. To illustrate, radius RE ranges from about 0.029 inches (inclusive) to about 0.31 inches.

此外,垂直定向的內表面1720係與上主體部分1730之水平定向的內表面1722鄰接。舉例而言,具有半徑RB的曲線係在水平定向的內表面1722與垂直定向的內表面1720之間形成。作為示例,半徑RB係約0.01英吋。為了說明,半徑RB之範圍從約0.09英吋(含)至約0.011英吋。 Additionally, the vertically oriented inner surface 1720 is contiguous with the horizontally oriented inner surface 1722 of the upper body portion 1730 . For example, a curve having a radius RB is formed between the horizontally oriented inner surface 1722 and the vertically oriented inner surface 1720 . As an example, the radius RB is about 0.01 inches. To illustrate, radius RB ranges from about 0.09 inches (inclusive) to about 0.011 inches.

水平定向的外表面1719係與垂直定向的外表面1714鄰接。舉例而言,具有半徑RF的曲線係在水平定向的外表面1719與垂直定向的外表面1714之間形成。作為示例,半徑RF係約0.015英吋。為了說明,半徑RF之範圍從約0.0145英吋(含)至約0.0155英吋。 Horizontally oriented outer surface 1719 adjoins vertically oriented outer surface 1714 . For example, a curve having a radius RF is formed between the horizontally oriented outer surface 1719 and the vertically oriented outer surface 1714 . As an example, the radius RF is about 0.015 inches. To illustrate, radius RF ranges from about 0.0145 inches (inclusive) to about 0.0155 inches.

下主體部分1734包含垂直定向的內表面1736、底表面1718、及該垂直定向的外表面1716。垂直定向的內表面1736係與中間主體部分1732之垂直定向的內表面1720鄰接。舉例而言,垂直定向的內表面1720及1736係整合作為一表面且具有相同的直徑D1(圖9D)。垂直定向的內表面1736係與底表面1718鄰接。舉例而言,具有半徑RJ的曲線係在垂直定向的內表面1736與底表面1718之間 形成。作為示例,半徑RJ係約0.02英吋。為了說明,半徑RJ之範圍從約0.019英吋(含)至約0.021英吋。 Lower body portion 1734 includes a vertically oriented inner surface 1736 , a bottom surface 1718 , and the vertically oriented outer surface 1716 . Vertically-oriented inner surface 1736 is contiguous with vertically-oriented inner surface 1720 of intermediate body portion 1732 . For example, vertically oriented inner surfaces 1720 and 1736 are integrated as one surface and have the same diameter Dl (FIG. 9D). Vertically oriented inner surface 1736 is adjacent to bottom surface 1718 . For example, a curve having radius RJ is between vertically oriented inner surface 1736 and bottom surface 1718 form. As an example, radius RJ is about 0.02 inches. To illustrate, radius RJ ranges from about 0.019 inches (inclusive) to about 0.021 inches.

垂直定向的外表面1716係與底表面1718鄰接。舉例而言,具有半徑RH的曲線係在底表面1718與垂直定向的外表面1716之間形成。作為示例,半徑RH係約0.02英吋。為了說明,半徑RH之範圍從約0.019英吋(含)至約0.021英吋。 Vertically oriented outer surface 1716 is adjacent to bottom surface 1718 . For example, a curved line having a radius RH is formed between bottom surface 1718 and vertically oriented outer surface 1716 . As an example, radius RH is about 0.02 inches. To illustrate, radius RH ranges from about 0.019 inches (inclusive) to about 0.021 inches.

垂直定向的外表面1716係與中間主體部分1732之水平定向的外表面1719鄰接。舉例而言,具有半徑RG的曲線係在垂直定向的外表面1716與水平定向的外表面1719之間形成。舉例而言,半徑RG係約0.01英吋。為了說明,半徑RG之範圍從約0.09英吋(含)至約0.011英吋。 Vertically-oriented outer surface 1716 is contiguous with horizontally-oriented outer surface 1719 of intermediate body portion 1732 . For example, a curve having a radius RG is formed between the vertically oriented outer surface 1716 and the horizontally oriented outer surface 1719 . For example, radius RG is about 0.01 inches. To illustrate, radius RG ranges from about 0.09 inches (inclusive) to about 0.011 inches.

垂直距離dB(諸如沿y軸的距離)係形成於水平定向的內表面1722與頂表面1704之間。作為示例,垂直距離dB係約0.27英吋。為了說明,垂直距離dB之範圍從約0.25英吋(含)至約0.29英吋。 A vertical distance dB (such as a distance along the y-axis) is formed between the horizontally oriented inner surface 1722 and the top surface 1704 . As an example, the vertical distance dB is about 0.27 inches. To illustrate, the vertical distance dB ranges from about 0.25 inches (inclusive) to about 0.29 inches.

此外,垂直距離dA係形成於水平定向的外表面1712與水平定向的內表面1722之間。作為示例,距離dA係約0.011英吋。為了說明,距離dA之範圍從約0.009英吋(含)至約0.013英吋。 Additionally, a vertical distance dA is formed between the horizontally-oriented outer surface 1712 and the horizontally-oriented inner surface 1722 . As an example, distance dA is about 0.011 inches. To illustrate, distance dA ranges from about 0.009 inches (inclusive) to about 0.013 inches.

此外,水平定向的內表面1722與水平定向的外表面1719間的垂直距離係dD。作為示例,距離dD係約0.172英吋。為了說明,距離dD之範圍從約0.17英吋(含)至約0.174英吋。 Additionally, the vertical distance between the horizontally-oriented inner surface 1722 and the horizontally-oriented outer surface 1719 is dD. As an example, distance dD is approximately 0.172 inches. To illustrate, distance dD ranges from about 0.17 inches (inclusive) to about 0.174 inches.

此外,水平定向的內表面1722與水平定向的底表面1718間的垂直距離表示為dC。作為示例,距離dC係約0.267英吋。為了說明,距離dC之範圍從約0.265英吋(含)至約0.269英吋。 Additionally, the vertical distance between the horizontally-oriented inner surface 1722 and the horizontally-oriented bottom surface 1718 is denoted as dC. As an example, the distance dC is about 0.267 inches. To illustrate, distance dC ranges from about 0.265 inches (inclusive) to about 0.269 inches.

應注意蓋環202之底表面1705包含水平定向的內表面1722、垂直定向的內表面1720和1736、底表面1718、垂直定向的外表面1716、水平定向的外表面1719、垂直定向的外表面1714、及水平定向的外表面1712。 It should be noted that bottom surface 1705 of cover ring 202 includes horizontally oriented inner surface 1722, vertically oriented inner surfaces 1720 and 1736, bottom surface 1718, vertically oriented outer surface 1716, horizontally oriented outer surface 1719, vertically oriented outer surface 1714 , and a horizontally oriented outer surface 1712.

進一步應注意蓋環202的所有邊緣係皆弧形的,諸如彎曲的。舉例而言,半徑RA、RB、RC、RD、RE、RF、RG、RH、RJ、及RK定義弧形的邊緣。 It should further be noted that all edges of cover ring 202 are arcuate, such as curved. For example, radii RA, RB, RC, RD, RE, RF, RG, RH, RJ, and RK define the edges of arcs.

圖9F係包含邊緣環228、蓋環202、基環210、及接地環212的系統之實施例的橫剖面圖。形成階梯式縮減部1726,其包含在方向上從垂直定向的內表面1724至垂直定向的內表面1720之變化。階梯式縮減部1726係在沿x軸的水平方向上,諸如+x或x方向。階梯式縮減部1726係在上主體部分1730與中間主體部分1732之間。階梯式縮減部1726係在遠離邊緣環228的+x方向上。 9F is a cross-sectional view of an embodiment of a system including edge ring 228 , cover ring 202 , base ring 210 , and ground ring 212 . A stepped reduction 1726 is formed that includes a change in direction from the vertically oriented inner surface 1724 to the vertically oriented inner surface 1720 . The stepped reduction 1726 is in a horizontal direction along the x-axis, such as the +x or x-direction. The stepped reduction 1726 is tied between the upper body portion 1730 and the middle body portion 1732 . The stepped reduction 1726 is tied in the +x direction away from the edge ring 228 .

此外,形成另一階梯式縮減部1729,其發生於從垂直定向的外表面1710至垂直定向的外表面1714。再次,階梯式縮減部1729係在水平方向上,諸如x軸的-x方向,除了階梯式縮減部1729係在與階梯式縮減部1726相反的方向之外。階梯式縮減部1729係在朝向邊緣環228的方向上。 In addition, another stepped reduction 1729 is formed, which occurs from the vertically oriented outer surface 1710 to the vertically oriented outer surface 1714 . Again, stepped reduction 1729 is oriented in a horizontal direction, such as the -x direction of the x-axis, except that stepped reduction 1729 is oriented in the opposite direction to stepped reduction 1726 . The stepped reduction 1729 is in a direction towards the edge ring 228 .

形成深度1762,其係從水平定向的內表面1722至中間主體部分1732之水平定向的外表面1719之距離。如此處使用之深度係在y軸的方向上,諸如-y方向。 A depth 1762 is formed, which is the distance from the horizontally-oriented inner surface 1722 to the horizontally-oriented outer surface 1719 of the intermediate body portion 1732 . Depth as used herein refers to the direction of the y-axis, such as the -y direction.

此外,另一階梯式縮減部1728係自垂直定向的外表面1714至垂直定向的外表面1716形成。階梯式縮減部1728係在-x方向上。 Additionally, another stepped reduction 1728 is formed from vertically oriented outer surface 1714 to vertically oriented outer surface 1716 . The stepped reduction 1728 is tied in the -x direction.

另一深度1764係形成於水平定向的外表面1719與下主體部分1734的底表面1718之間。深度1764係下主體部分1734的深度。應注意深度1764係小於深度1762。此外,垂直定向的內表面1724之深度係大於深度1762。 Another depth 1764 is formed between the horizontally oriented outer surface 1719 and the bottom surface 1718 of the lower body portion 1734 . Depth 1764 is the depth of lower body portion 1734 . It should be noted that depth 1764 is less than depth 1762. Additionally, the depth of vertically oriented inner surface 1724 is greater than depth 1762 .

環形寬度1746係在垂直定向的內表面1720與垂直定向的外表面1714之間產生。如本文使用之環形寬度係沿x軸。此外,另一環形寬度1754係在 垂直定向的內表面1736與垂直定向的外表面1716之間產生。環形寬度1754係小於環形寬度1746。 Annular width 1746 is created between vertically oriented inner surface 1720 and vertically oriented outer surface 1714 . Annular width as used herein is along the x-axis. In addition, another annular width 1754 is tied at A vertically oriented inner surface 1736 is created between a vertically oriented outer surface 1716 . Annular width 1754 is less than annular width 1746 .

可追踪距離1735係在邊緣環228與接地環212之間。可追踪距離1735係沿水平定向的內表面1722之寬度L11、垂直定向的內表面1720和1736之組合長度L12、底表面1718之寬度L13、垂直定向的外表面1716之長度L14、及水平定向的外表面1719之寬度L15。組合長度L12係垂直定向內表面1720之長度及垂直定向內表面1736之長度的總和。可追踪距離1735係自RF功率銷208接收的電壓係沿蓋環202耗散所沿著的路徑。邊緣環228作為電容器的電容器板,而電極EL(圖2)作為電容器的另一電容器板,其中支撐環112的介電材料在兩個電容器板之間。距離1係沿x軸之在邊緣環228與接地環212之間的水平距離,用於耗散由RF功率銷208提供的電壓。 Traceable distance 1735 is tied between edge ring 228 and ground ring 212 . Trackable distance 1735 is along width L11 of horizontally oriented inner surface 1722, combined length L12 of vertically oriented inner surfaces 1720 and 1736, width L13 of bottom surface 1718, length L14 of vertically oriented outer surface 1716, and horizontally oriented Width L15 of outer surface 1719 . Combined length L12 is the sum of the length of vertically oriented inner surface 1720 and the length of vertically oriented inner surface 1736 . Traceable distance 1735 is the path along which the voltage received from RF power pin 208 is dissipated along cover ring 202 . The edge ring 228 acts as one capacitor plate of the capacitor and the electrode EL (FIG. 2) acts as the other capacitor plate of the capacitor with the dielectric material of the support ring 112 between the two capacitor plates. Distance 1 is the horizontal distance along the x-axis between edge ring 228 and ground ring 212 for dissipating the voltage provided by RF power pin 208 .

可追踪距離1735或距離1定義蓋環202的環形寬度。此外,沿可追踪距離1735或距離1的電壓耗散定義蓋環202的環形寬度。蓋環202的環形寬度係蓋環202的內直徑ID2與蓋環202的外直徑OD2之間的差。蓋環202的環形寬度係定義成使得預定量的隔絕電壓係在垂直定向的內表面1724處達成。舉例而言,在7-10伏特係沿蓋環202之千分之一英吋耗散且在垂直定向的內表面1724處之隔絕電壓係5000伏特的條件下,蓋環202的環形寬度係等於5000伏特之倍數(諸如二或三倍)與每千分之一英吋的蓋環202之7-10伏特之耗散的比率。 Traceable distance 1735 or distance 1 defines the annular width of cover ring 202 . Furthermore, the voltage dissipation along traceable distance 1735 or distance 1 defines the annular width of cover ring 202 . The annular width of the cover ring 202 is the difference between the inner diameter ID2 of the cover ring 202 and the outer diameter OD2 of the cover ring 202 . The annular width of the cover ring 202 is defined such that a predetermined amount of isolation voltage is achieved at the vertically oriented inner surface 1724 . For example, with 7-10 volts dissipated along a thousandth of an inch of the cover ring 202 and an isolation voltage of 5000 volts at the vertically oriented inner surface 1724, the annular width of the cover ring 202 is equal to A ratio of a multiple of 5000 volts, such as two or three times, to a dissipation of 7-10 volts per thousandth of an inch of cover ring 202 .

在一些實施例中,深度1764係大於深度1762。此外,在諸多實施例中,垂直定向的內表面1724之深度係小於深度1762。 In some embodiments, depth 1764 is greater than depth 1762 . Furthermore, in many embodiments, the depth of vertically oriented inner surface 1724 is less than depth 1762 .

圖9G係包含邊緣環108、蓋環118、基環116、及接地環114之系統之實施例的橫剖面圖。蓋環118包含上主體部分1761、中間主體部分1763、及下主體部分1765。 9G is a cross-sectional view of an embodiment of a system including edge ring 108 , cover ring 118 , base ring 116 , and ground ring 114 . Cover ring 118 includes an upper body portion 1761 , a middle body portion 1763 , and a lower body portion 1765 .

上主體部分1761包含垂直定向的內表面1782、水平定向的頂表面1766、垂直定向的外表面1768、及水平定向的外表面1770。垂直定向的外表面1768係與頂表面1766鄰接,而水平定向的外表面1770係與垂直定向的外表面1768鄰接。舉例而言,具有半徑的曲線係在垂直定向的外表面1768與頂表面1766之間形成,而具有半徑的曲線係在水平定向的外表面1770與垂直定向的外表面1768之間形成。此外,垂直定向的內表面1782係與頂表面1766鄰接。舉例而言,具有半徑的曲線係在垂直定向的內表面1782與頂表面1766之間形成。 Upper body portion 1761 includes a vertically oriented inner surface 1782 , a horizontally oriented top surface 1766 , a vertically oriented outer surface 1768 , and a horizontally oriented outer surface 1770 . Vertically oriented outer surface 1768 adjoins top surface 1766 , while horizontally oriented outer surface 1770 adjoins vertically oriented outer surface 1768 . For example, a curved line with a radius is formed between vertically oriented outer surface 1768 and top surface 1766 , while a curved line with a radius is formed between horizontally oriented outer surface 1770 and vertically oriented outer surface 1768 . Additionally, a vertically oriented inner surface 1782 adjoins top surface 1766 . For example, a curved line with a radius is formed between vertically oriented inner surface 1782 and top surface 1766 .

中間主體部分1763包含垂直定向的外表面1772、垂直定向的內表面1780、及水平定向的內表面1781。垂直定向的外表面1772係與上主體部分1761之水平定向的外表面1770鄰接。舉例而言,具有半徑的曲線係在垂直定向的外表面1772與水平定向的外表面1770之間形成。 Intermediate body portion 1763 includes a vertically oriented outer surface 1772 , a vertically oriented inner surface 1780 , and a horizontally oriented inner surface 1781 . Vertically oriented outer surface 1772 is contiguous with horizontally oriented outer surface 1770 of upper body portion 1761 . For example, a curved line with a radius is formed between the vertically oriented outer surface 1772 and the horizontally oriented outer surface 1770 .

此外,垂直定向的內表面1780係與垂直定向的內表面1782鄰接,諸如鄰近垂直定向的內表面1782。為了說明,垂直定向的內表面1782位在與垂直定向的內表面1780相同的垂直平面中。 Additionally, vertically-oriented inner surface 1780 is contiguous with, such as adjacent to, vertically-oriented inner surface 1782 . To illustrate, vertically oriented inner surface 1782 lies in the same vertical plane as vertically oriented inner surface 1780 .

水平定向的內表面1781係與垂直定向的內表面1780鄰接。舉例而言,具有半徑的曲線係在水平定向的內表面1781與垂直定向的內表面1780之間形成。 Horizontally oriented inner surface 1781 adjoins vertically oriented inner surface 1780 . For example, a curved line with a radius is formed between the horizontally oriented inner surface 1781 and the vertically oriented inner surface 1780 .

下主體部分1765包含垂直定向的外表面1774、水平定向的底表面1776、及垂直定向的內表面1778。垂直定向的內表面1778係與中間主體部分1763之水平定向的內表面1781鄰接。舉例而言,具有半徑的曲線係在垂直定向的內表面1778與水平定向的內表面1781之間形成。 Lower body portion 1765 includes a vertically oriented outer surface 1774 , a horizontally oriented bottom surface 1776 , and a vertically oriented inner surface 1778 . Vertically-oriented inner surface 1778 is contiguous with horizontally-oriented inner surface 1781 of intermediate body portion 1763 . For example, a curved line with a radius is formed between the vertically oriented inner surface 1778 and the horizontally oriented inner surface 1781 .

此外,底表面1776係與垂直定向的內表面1778鄰接。舉例而言,具有半徑的曲線係在底表面1776與垂直定向的內表面1778之間形成。 Additionally, bottom surface 1776 is adjoined by vertically oriented inner surface 1778 . For example, a curved line with a radius is formed between bottom surface 1776 and vertically oriented inner surface 1778 .

此外,底表面1776係與垂直定向的外表面1774鄰接。舉例而言,具有半徑的曲線係在底表面1776與垂直定向的外表面1774之間形成。垂直定向的外表面1774位在與中間主體部分1763之垂直定向的外表面1772相同的垂直平面中。 Additionally, bottom surface 1776 is adjacent to vertically oriented outer surface 1774 . For example, a curved line with a radius is formed between bottom surface 1776 and vertically oriented outer surface 1774 . Vertically oriented outer surface 1774 lies in the same vertical plane as vertically oriented outer surface 1772 of intermediate body portion 1763 .

階梯式縮減部1783係在上主體部分1761之垂直定向的外表面1768與中間主體部分1763之垂直定向的外表面1772之間形成。階梯式縮減部1783係在朝邊緣環108的-x方向上。 A stepped reduction 1783 is formed between the vertically oriented outer surface 1768 of the upper body portion 1761 and the vertically oriented outer surface 1772 of the middle body portion 1763 . The stepped reduction 1783 is tied in the −x direction towards the edge ring 108 .

此外,另一階梯式縮減部1784係從中間主體部分1763之垂直定向的內表面1780至中間主體部分1763之水平定向的內表面1781形成。自垂直定向的內表面1780起之階梯式縮減部1784發生在遠離邊緣環108之x軸的+x方向中。 In addition, another stepped reduction 1784 is formed from the vertically oriented inner surface 1780 of the intermediate body portion 1763 to the horizontally oriented inner surface 1781 of the intermediate body portion 1763 . The stepped reduction 1784 from the vertically oriented inner surface 1780 occurs in the +x direction away from the x-axis of the edge ring 108 .

環形寬度1786係形成於中間主體部分1763之垂直定向的內表面1780與垂直定向的外表面1772之間。環形寬度1786係沿x軸。此外,另一環形寬度1788係形成於下主體部分1765之垂直定向的內表面1778與垂直定向的外表面1774之間。環形寬度1788係沿x軸。環形寬度1788係小於環形寬度1786。 An annular width 1786 is formed between the vertically oriented inner surface 1780 and the vertically oriented outer surface 1772 of the intermediate body portion 1763 . Ring width 1786 is along the x-axis. Additionally, another annular width 1788 is formed between the vertically oriented inner surface 1778 and the vertically oriented outer surface 1774 of the lower body portion 1765 . Ring width 1788 is along the x-axis. Annular width 1788 is less than annular width 1786 .

中間主體部分1763之沿y軸的深度1790係從水平定向的外表面1770至水平定向的內表面1781形成。此外,下主體部分1765之沿y軸之另一深度1792係從水平定向的內表面1781至底表面1776形成。深度1792係小於深度1790。 The depth 1790 of the intermediate body portion 1763 along the y-axis is formed from the horizontally oriented outer surface 1770 to the horizontally oriented inner surface 1781 . Additionally, another depth 1792 of lower body portion 1765 along the y-axis is formed from horizontally oriented inner surface 1781 to bottom surface 1776 . Depth 1792 is less than depth 1790.

應注意蓋環118的底表面包含表面1781、1778、1776、1774、1772、及1770。 Note that the bottom surface of cover ring 118 includes surfaces 1781 , 1778 , 1776 , 1774 , 1772 , and 1770 .

可追踪距離1794係形成於邊緣環108與接地環114之間。可追踪距離1794係沿著下列者:沿y軸之垂直定向的內表面1780之深度L21、沿x軸之水平定向的內表面1781之寬度L22、垂直定向的內表面1778之深度L23、及底表面1776的寬度L24。深度L23係與深度1792相同。可追踪距離1794係藉由邊緣環108接收的電壓經由支撐環112到達接地環114所沿著的路徑。邊緣環108作為電容器的電 容器板,而電極EL(圖2)作為電容器的另一電容器板,其中支撐環112的介電材料在兩個電容器板之間。 The traceable distance 1794 is formed between the edge ring 108 and the ground ring 114 . The trackable distance 1794 is along the following: the depth L21 of the vertically oriented inner surface 1780 along the y-axis, the width L22 of the horizontally oriented inner surface 1781 along the x-axis, the depth L23 of the vertically oriented inner surface 1778, and the bottom Surface 1776 has width L24. Depth L23 is the same as depth 1792. The traceable distance 1794 is the path along which the voltage received by the edge ring 108 reaches the ground ring 114 through the support ring 112 . The edge ring 108 acts as a capacitor for the electrical The container plate, while the electrode EL ( FIG. 2 ) acts as the other capacitor plate of the capacitor with the dielectric material of the support ring 112 between the two capacitor plates.

沿x軸的距離2係形成於邊緣環108與接地環114之間。距離2係小於圖9F的距離1。因為圖9F之邊緣環228的外直徑係小於邊緣環108的外直徑,所以圖9F之蓋環202的上主體部分1730具有比蓋環118之上主體部分1761大的寬度。與上主體部分1761的寬度相比之上主體部分1730的寬度之增加使距離1相較於距離2增加。較大的距離1補償與邊緣環108相比之邊緣環228之減少的寬度,以針對由功率銷208(圖2)供應之RF訊號的RF電壓提供預定量的距離,以經由可追踪距離213(圖2)或1735(圖9F)穿越至接地環212。舉例而言,每千分之一英吋的蓋環有約7至約10伏特的損失。若5000V之預定的隔絕電壓將在蓋環之上主體部分之垂直定向的內表面處達到,則蓋環之上主體部分的環形寬度係加以計算為(正實數X 5000)/(每千分之一英吋之蓋環的伏特損失),其中「正實數」係倍數,諸如2或3或4的。 A distance 2 along the x-axis is formed between the edge ring 108 and the ground ring 114 . Distance 2 is smaller than distance 1 in FIG. 9F . Because the outer diameter of edge ring 228 of FIG. 9F is smaller than the outer diameter of edge ring 108 , upper body portion 1730 of cover ring 202 of FIG. 9F has a greater width than upper body portion 1761 of cover ring 118 . The increase in the width of upper body portion 1730 compared to the width of upper body portion 1761 increases Distance 1 compared to Distance 2 . The larger distance 1 compensates for the reduced width of edge ring 228 compared to edge ring 108 to provide a predetermined amount of distance for the RF voltage of the RF signal supplied by power pin 208 ( FIG. 2 ) to pass traceable distance 213 ( FIG. 2 ) or 1735 ( FIG. 9F ) through to ground ring 212 . For example, there is a loss of about 7 to about 10 volts per thousandth of an inch of the cover ring. If the predetermined isolation voltage of 5000V is to be achieved at the vertically oriented inner surface of the body portion above the cover ring, the annular width of the body portion above the cover ring is calculated as (positive real number X 5000)/(per thousandth Volt loss for a one-inch cover ring), where "positive real numbers" are multiples, such as 2 or 3 or 4.

在一些實施例中,深度1792係大於深度1790。 In some embodiments, depth 1792 is greater than depth 1790 .

本文描述的實施例可利用諸多電腦系統配置實施,該等諸多電腦系統配置包含手持硬體單元、微處理器系統、基於微處理器或可程式化的消費者電子產品、迷你電腦、大型電腦等。該等實施例亦可在分散的計算環境中實施,在該分散的計算環境中,任務係藉由經由網路鏈接的遠程處理硬體單元執行。 The embodiments described herein can be implemented using numerous computer system configurations including handheld hardware units, microprocessor systems, microprocessor-based or programmable consumer electronics, mini-computers, mainframe computers, etc. . The embodiments may also be practiced in distributed computing environments where tasks are performed by remote processing hardware units that are linked through a network.

在一些實施例中,此處描述的控制器為系統的一部分,其可為上述例子的一部分。此等系統包括半導體處理設備,其包含處理工具或複數處理工具、腔室或複數腔室、用於處理的平臺或複數平臺、及/或特定處理元件(晶圓基座、氣流系統等)。這些系統係與電子設備整合,該等電子設備用於在半導體晶圓或基板處理之前、期間、及之後控制這些系統的操作。電子設備係稱作為「控制器」,其可控制系統或複數系統之諸多元件或子部分。依據系統的處理需求及 /或類型,控制器係加以編程以控制此處揭示的任何製程,包含:處理氣體的遞送、溫度設定(例如加熱及/或冷卻)、壓力設定、真空設定、功率設定、RF產生器設定、RF匹配電路設定、頻率設定、流率設定、流體遞送設定、位置及操作設定、出入一工具和其他轉移工具及/或與系統耦接或介接的裝載鎖定部之晶圓轉移。 In some embodiments, the controller described herein is part of a system, which may be part of the examples described above. Such systems include semiconductor processing equipment that includes a processing tool or tools, a chamber or chambers, a platform or platforms for processing, and/or specific processing elements (wafer susceptors, gas flow systems, etc.). These systems are integrated with electronics used to control the operation of these systems before, during, and after semiconductor wafer or substrate processing. An electronic device is referred to as a "controller" which controls elements or subsections of a system or systems. According to the processing requirements of the system and And/or type, the controller is programmed to control any of the processes disclosed herein, including: delivery of process gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfers to and from a tool and other transfer tools and/or load locks coupled or interfaced with the system.

廣義地說,在諸多實施例中,控制器係定義為具有接收指令、發布指令、控制操作、啟用清潔操作、啟用端點量測等之諸多積體電路、邏輯、記憶體、及/或軟體的電子設備。積體電路包含儲存程式指令之韌體形式的晶片、數位訊號處理器(DSP)、定義為ASIC的晶片、PLD、及/或執行程式指令(例如軟體)的一或更多微處理器或微控制器。該等程式指令係以諸多個別設定(或程式檔案)之形式與控制器通訊的指令,該等設定針對半導體晶圓或系統定義用於執行特殊製程的參數、因子、變數等。在一些實施例中,該等程式指令係由製程工程師定義之配方的部分,以在一或更多層、材料、金屬、氧化物、矽、二氧化矽、表面、電路、及/或晶圓的晶粒製造期間完成一或更多處理步驟。 Broadly speaking, in many embodiments, a controller is defined as having integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. electronic equipment. An integrated circuit includes a chip in the form of firmware storing program instructions, a digital signal processor (DSP), a chip defined as an ASIC, a PLD, and/or one or more microprocessors or microprocessors that execute program instructions (such as software) controller. These program instructions are instructions communicated with the controller in the form of many individual settings (or program files), which define parameters, factors, variables, etc. for executing special processes for semiconductor wafers or systems. In some embodiments, the programming instructions are part of a recipe defined by a process engineer to create a pattern on one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or wafers One or more processing steps are completed during the fabrication of the die.

在一些實施例中,控制器係電腦的一部分或耦接至電腦,該電腦係與系統整合、耦接至系統、以其他方式網路連至系統、或以上方式組合。舉例而言,控制器係在「雲端」或晶圓廠主機電腦系統的整體或部分,允許晶圓處理的遠端存取。該電腦可允許針對系統的遠端存取以監測製造操作的當前進度、檢查過往製造操作的歷史、檢查來自複數製造操作的趨勢或性能度量,以改變目前處理的參數、以設定目前操作之後的處理步驟或新的製程。 In some embodiments, the controller is part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller is part or all of the "cloud" or fab's mainframe computer system, allowing remote access for wafer processing. The computer may allow remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance metrics from a plurality of manufacturing operations, to change parameters of a current process, to set parameters after a current operation Process step or new process.

在一些實施例中,遠程電腦(例如伺服器)經由網路提供製程配方給系統,該網路包含區域網路或網際網路。遠程電腦包含使用者介面,其允許參數及/或設定的輸入或編程,這些參數及/或設定係接著從遠程電腦被傳遞至系統。在一些例子中,控制器接收數據形式的指令,該數據明確指定於一或更多個 操作期間將執行之各個處理步驟的參數、因子、及/或變數。應理解參數、因子、及/或變數係專門用於將執行之製程的類型及控制器受配置所介接或控制之工具的類型。因此,如上所述,控制器係分散式的,諸如藉由包含一或更多個分散的控制器,其由網路連在一起且朝共同的目的(諸如此處描述的製程及控制)作業。一個用於此等目的之分散式控制器的例子包含腔室中的一或更多積體電路,其連通位於遠端(諸如在平台級或作為遠程電腦的一部分)之一或更多積體電路,而結合以控制腔室中的製程。 In some embodiments, a remote computer (such as a server) provides the recipe to the system via a network, which includes a local area network or the Internet. The remote computer includes a user interface that allows the input or programming of parameters and/or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specifically specifies one or more Parameters, factors, and/or variables for various processing steps to be performed during operation. It should be understood that parameters, factors, and/or variables are specific to the type of process to be performed and the type of tool the controller is configured to interface or control. Thus, as noted above, the controller is decentralized, such as by including one or more decentralized controllers that are networked together and work toward a common purpose, such as the process and control described herein. . An example of a decentralized controller for these purposes consists of one or more integrated circuits in a housing that communicates with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) circuits, combined to control the process in the chamber.

不受限制地,在諸多實施例中,應用該等方法的示例系統包含電漿蝕刻腔室或模組、沉積腔室或模組、旋轉-潤洗腔室或模組、金屬電鍍腔室或模組、清潔腔室或模組、斜邊蝕刻腔室或模組、物理氣相沉積(PVD)腔室或模組、化學氣相沉積(CVD)腔室或模組、原子層沉積(ALD)腔室或模組、原子層蝕刻(ALE)腔室或模組、電漿加強化學氣相沉積(PECVD)腔室或模組、清潔類型腔室或模組、離子植入腔室或模組、軌道腔室或模組、及任何關聯或使用於半導體晶圓的製造及/或生產中之其他的半導體處理系統。 Without limitation, in various embodiments, example systems for applying the methods include plasma etch chambers or modules, deposition chambers or modules, spin-rinse chambers or modules, metal plating chambers or Module, Clean Chamber or Module, Bevel Etch Chamber or Module, Physical Vapor Deposition (PVD) Chamber or Module, Chemical Vapor Deposition (CVD) Chamber or Module, Atomic Layer Deposition (ALD) ) chamber or module, atomic layer etching (ALE) chamber or module, plasma enhanced chemical vapor deposition (PECVD) chamber or module, clean type chamber or module, ion implantation chamber or module Groups, orbital chambers or modules, and any other semiconductor processing systems associated with or used in the fabrication and/or production of semiconductor wafers.

進一步注意在一些實施例中,上述操作可應用於一些類型的電漿腔室,例如:包含感應耦合電漿(ICP)反應器、變壓器耦合電漿反應器、導體工具、介電工具的電漿腔室;包含電子迴旋共振(ECR)反應器的電漿腔室等。舉例而言,一或更多RF產生器係耦接至在ICP反應器內的電感器。電感器之形狀的例子包含螺線管(solenoid)、圓頂形線圈、扁平形線圈等。 Note further that in some embodiments, the above operations can be applied to some types of plasma chambers, for example: plasmas including inductively coupled plasma (ICP) reactors, transformer coupled plasma reactors, conductive tools, dielectric tools Chambers; plasma chambers containing electron cyclotron resonance (ECR) reactors, etc. For example, one or more RF generators are coupled to an inductor within the ICP reactor. Examples of the shape of the inductor include a solenoid, a dome-shaped coil, a flat-shaped coil, and the like.

如上所述,依據將由工具執行的製程步驟或複數製程步驟,主機電腦與下列其中一者以上通訊:其他工具電路或模組、其他工具元件、群組工具、其他工具介面、毗鄰工具、相鄰工具、位於工廠各處的工具、主電腦、另一控制器、或用於材料傳送的工具,該等用於材料傳送的工具將晶圓的容器攜帶進出半導體生產工廠內的工具位置及/或負載端。 As noted above, depending on the process step or steps to be performed by the tool, the host computer communicates with one or more of the following: other tool circuits or modules, other tool components, group tools, other tool interfaces, adjacent tools, adjacent tool, a tool located throughout the fab, a host computer, another controller, or a tool used for material transfer that carries containers of wafers to and from a tool location within a semiconductor production fab and/or load side.

在考慮上述實施例後,應理解一些實施例使用涉及儲存於電腦系統內之資料之諸多可利用電腦實現的操作。這些操作係那些物理性操縱的物理量。任何此處描述之形成該等實施例之部分的操作係有用的機械操作。 After considering the above-described embodiments, it should be understood that some embodiments employ computer-implementable operations involving data stored in computer systems. These operations are those physical manipulations of physical quantities. Any of the operations described herein that form part of these embodiments are useful mechanical operations.

一些實施例亦關於用於執行這些操作的硬體單元或設備。該設備係針對特殊用途電腦而特別建構。當被界定成特殊用途電腦時,該電腦執行非為特殊用途之部分的其他處理、程式執行或常用程式,但仍然能夠針對特殊用途而操作。 Some embodiments also relate to hardware units or devices for performing these operations. This device is purpose built for a special purpose computer. When defined as a special purpose computer, the computer performs other processing, program execution, or commonly used programs that are not part of the special purpose, but is still capable of operating for the special purpose.

在一些實施例中,該等操作可藉由電腦處理,該電腦係藉由儲存在電腦記憶體、快取記憶體中或透過電腦網路獲得的一或更多電腦程式選擇性地啟動或配置。當資料係透過電腦網路獲得時,該資料可藉由在電腦網路上的其他電腦(例如雲端計算資源)處理。 In some embodiments, the operations may be performed by a computer selectively activated or configured by one or more computer programs stored in computer memory, cache memory, or available over a computer network . When data is obtained through a computer network, the data can be processed by other computers on the computer network (such as cloud computing resources).

一或更多實施例亦可被製作成在非暫態電腦可讀媒體上的電腦可讀碼。該非暫態電腦可讀媒體係儲存資料的任何資料儲存硬體單元(例如記憶體裝置等),該資料之後係藉由電腦系統讀取。非暫態電腦可讀媒體的示例包含硬碟、網路附接儲存器(NAS)、ROM、RAM、光碟ROM(CD-ROM)、可錄式光碟(CD-R)、可讀寫式光碟(CD-RW)、磁帶及其他光學和非光學資料儲存硬體單元。在一些實施例中,該非暫態電腦可讀媒體包含分散在網路耦接電腦系統的電腦可讀實體媒體,使得電腦可讀碼係以分散的方式儲存及執行。 One or more embodiments can also be embodied as computer readable code on a non-transitory computer readable medium. The non-transitory computer readable medium is any data storage hardware unit (such as a memory device, etc.) that stores data that is thereafter read by a computer system. Examples of non-transitory computer readable media include hard disk, network attached storage (NAS), ROM, RAM, compact disc ROM (CD-ROM), compact disc recordable (CD-R), compact disc (CD-RW), magnetic tape, and other optical and non-optical data storage hardware units. In some embodiments, the non-transitory computer-readable medium includes physical computer-readable media distributed over network-coupled computer systems such that computer-readable code is stored and executed in a distributed fashion.

雖然以上方法操作係以特定順序描述,但應理解在諸多實施例中,其他內務處理作業係在操作之間執行、或該等方法操作係調整成使得該等操作發生在略微不同的時間點、或在允許該等方法操作發生在各種時距內的系統中分散、或以不同於上述的順序執行。 Although the above method operations are described in a particular order, it should be understood that in many embodiments, other housekeeping operations are performed between the operations, or that the method operations are adjusted such that the operations occur at slightly different points in time, Or dispersed in a system that allows the method operations to occur over various time intervals, or performed in an order different from that described above.

更應注意在一實施例中,來自上述任何實施例的一或更多特徵係與任何其他實施例的一或更多特徵結合而不背離在本揭示內容內所述之諸多實施例中描述的範圍。 It should also be noted that in one embodiment, one or more features from any of the embodiments described above are combined with one or more features of any other embodiment without departing from what is described in the many embodiments described in this disclosure. scope.

雖然上述實施例為了清楚理解的目的已以一些細節描述,但將顯而易見,若干改變與修飾可在隨附申請專利範圍之範疇內實施。因此,本發明實施例應視為說明性而非限制性,且該等實施例不限於此處提供的細節。 Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that several changes and modifications may be practiced within the scope of the appended claims. Accordingly, the present embodiments should be considered as illustrative rather than restrictive, and the embodiments are not limited to the details provided herein.

228‧‧‧邊緣環 228‧‧‧edge ring

1604‧‧‧頂表面 1604‧‧‧top surface

1606‧‧‧內表面 1606‧‧‧inner surface

1608‧‧‧內表面 1608‧‧‧inner surface

1610‧‧‧內表面 1610‧‧‧inner surface

1612‧‧‧底表面 1612‧‧‧Bottom surface

1614‧‧‧外表面 1614‧‧‧External surface

1616‧‧‧彎曲的邊緣 1616‧‧‧curved edge

1618‧‧‧內表面 1618‧‧‧inner surface

1620‧‧‧內表面 1620‧‧‧inner surface

1622‧‧‧台階 1622‧‧‧steps

A1‧‧‧角度 A1‧‧‧angle

A2‧‧‧角度 A2‧‧‧angle

d1‧‧‧距離 d1‧‧‧distance

d2‧‧‧長度 d2‧‧‧length

d3‧‧‧距離 d3‧‧‧distance

ID1‧‧‧內直徑 ID1‧‧‧inner diameter

MD‧‧‧中間直徑 MD‧‧‧intermediate diameter

OD1‧‧‧外直徑 OD1‧‧‧outer diameter

R1‧‧‧半徑 R1‧‧‧radius

R2‧‧‧半徑 R2‧‧‧radius

R3‧‧‧半徑 R3‧‧‧radius

R4‧‧‧半徑 R4‧‧‧radius

R5‧‧‧半徑 R5‧‧‧radius

R6‧‧‧半徑 R6‧‧‧radius

R7‧‧‧半徑 R7‧‧‧radius

Claims (32)

一種用於電漿處理腔室的邊緣環,該邊緣環具有一環形體,該環形體係配置成圍繞電漿處理腔室的一基板支座,該邊緣環包含:該環形體,其具有一底側、一頂側、一內側、及一外側,其中該底側係一水平定向的表面,從該內側之一垂直定向的內表面延伸至該外側;複數緊固件孔,沿該底側配置在該環形體內,該複數緊固件孔之各者具有用於容納一緊固件之螺紋的內表面,該緊固件用於將該環形體附接至一支撐環;一台階,從該頂側延伸至該內側之該垂直定向的內表面,其中該台階包含一呈角度的表面及一水平定向的內表面;及彎曲邊緣,形成於該頂側與該外側之間,其中,該複數緊固件孔係在該底側上以相等距離隔開。 An edge ring for a plasma processing chamber, the edge ring having an annular body configured to surround a substrate support of the plasma processing chamber, the edge ring comprising: the annular body having a bottom side , a top side, an inner side, and an outer side, wherein the bottom side is a horizontally oriented surface extending from a vertically oriented inner surface of the inner side to the outer side; a plurality of fastener holes are disposed along the bottom side on the In the annular body, each of the plurality of fastener holes has an inner surface for receiving threads of a fastener for attaching the annular body to a support ring; a step extending from the top side to the the vertically oriented inner surface of the inner side, wherein the step comprises an angled surface and a horizontally oriented inner surface; and a curved edge formed between the top side and the outer side, wherein the plurality of fastener holes are spaced at equal distances on the bottom side. 如申請專利範圍第1項之用於電漿處理腔室的邊緣環,其中,該邊緣環係可消耗的且可更換的。 An edge ring for a plasma processing chamber as claimed in claim 1, wherein the edge ring is consumable and replaceable. 如申請專利範圍第1項之用於電漿處理腔室的邊緣環,其中該內側具有該呈角度的表面、與該呈角度的表面鄰接之該水平定向的內表面、及與該水平定向的內表面鄰接之該垂直定向的內表面,其中該底側係水平定向的且與該外側及該垂直定向的內表面鄰接,其中該外側係垂直定向的表面, 其中該彎曲邊緣係毗鄰該頂側及該外側。 The edge ring for a plasma processing chamber according to claim 1, wherein the inner side has the angled surface, the horizontally oriented inner surface adjacent to the angled surface, and the horizontally oriented inner surface the vertically oriented inner surface adjacent to the inner surface, wherein the bottom side is horizontally oriented and adjoins the outer side and the vertically oriented inner surface, wherein the outer side is a vertically oriented surface, Wherein the curved edge is adjacent to the top side and the outer side. 如申請專利範圍第1項之用於電漿處理腔室的邊緣環,其中該基板支座係一卡盤且該支撐環係一可調邊緣鞘環,其中該底側具有第一部分、第二部分、及第三部分,該第一部分係配置成藉由傳導膠體傳導性地耦接至該卡盤,該第二部分係配置成藉由傳導膠體傳導性地耦接至該可調邊緣鞘環,而該第三部分係毗鄰一基環。 An edge ring for a plasma processing chamber as claimed in claim 1, wherein the substrate support is a chuck and the support ring is an adjustable edge sheath, wherein the bottom side has a first portion, a second part, and a third part, the first part is configured to be conductively coupled to the chuck by conductive gel, the second part is configured to be conductively coupled to the adjustable edge sheath by conductive gel , and the third moiety is adjacent to a base ring. 如申請專利範圍第1項之用於電漿處理腔室的邊緣環,其中該邊緣環具有範圍從13.6英吋(含)至15英吋的外直徑,其中該外直徑係受限於該外側。 An edge ring for a plasma processing chamber as claimed in claim 1, wherein the edge ring has an outer diameter ranging from 13.6 inches (inclusive) to 15 inches, wherein the outer diameter is limited to the outer side . 如申請專利範圍第1項之用於電漿處理腔室的邊緣環,其中該頂側具有大於13.6英吋且至多15英吋的外直徑,以在一蓋環毗鄰該外側而配置時,減少從該頂側至該蓋環之電弧放電的可能性。 An edge ring for a plasma processing chamber as claimed in claim 1, wherein the top side has an outer diameter greater than 13.6 inches and at most 15 inches, to reduce when a cover ring is disposed adjacent the outer side Possibility of arcing from the top side to the cover ring. 如申請專利範圍第1項之用於電漿處理腔室的邊緣環,其中當一蓋環毗鄰該外側而配置時,該彎曲邊緣減少從該彎曲邊緣至該蓋環之電弧放電的可能性。 The edge ring for a plasma processing chamber of claim 1, wherein when a cover ring is disposed adjacent the outer side, the curved edge reduces the possibility of arcing from the curved edge to the cover ring. 一種用於電漿處理腔室的邊緣環,該邊緣環具有一環形體,該環形體係配置成圍繞電漿處理腔室的一基板支座,該邊緣環包含:該環形體,其具有一底側、一頂側、一內側、及一外側,其中該底側係一水平定向的表面,從該內側之一垂直定向的內表面延伸至該外側; 複數緊固件孔,沿該底側配置在該環形體內,該複數緊固件孔之各者具有用於容納一緊固件之螺紋的內表面,該緊固件用於將該環形體附接至一支撐環;一台階,從該頂側延伸至該內側之該垂直定向的內表面,其中該台階包含一呈角度的表面及一水平定向的內表面;及彎曲邊緣,形成於該頂側與該外側之間,其中,該複數緊固件孔的其中一者係由形成於該邊緣環之該底側內之一槽的頂表面及該槽的側表面部分地包圍,其中,當緊固件被容納在該槽中時,該槽的該頂表面與該緊固件之間的間隙係小於一毫米以減少該間隙內之電弧放電的可能性。 An edge ring for a plasma processing chamber, the edge ring having an annular body configured to surround a substrate support of the plasma processing chamber, the edge ring comprising: the annular body having a bottom side , a top side, an inner side, and an outer side, wherein the bottom side is a horizontally oriented surface extending from a vertically oriented inner surface of the inner side to the outer side; A plurality of fastener holes disposed in the annular body along the bottom side, each of the plurality of fastener holes having an inner surface for receiving threads of a fastener for attaching the annular body to a support ring; a step extending from the top side to the vertically oriented inner surface of the inner side, wherein the step includes an angled surface and a horizontally oriented inner surface; and curved edges formed on the top side and the outer side wherein one of the plurality of fastener holes is partially surrounded by the top surface of a groove formed in the bottom side of the edge ring and the side surface of the groove, wherein when a fastener is received in When in the slot, the gap between the top surface of the slot and the fastener is less than one millimeter to reduce the possibility of arcing within the gap. 一種用於電漿處理腔室的邊緣環,該邊緣環具有一環形體,該環形體係配置成圍繞電漿處理腔室的一基板支座,該邊緣環包含:該環形體,其具有一底側、一頂側、一內側、及一外側,其中該底側係一水平定向的表面,從該內側之一垂直定向的內表面延伸至該外側;複數緊固件孔,沿該底側配置在該邊緣環的該環形體內,其中該複數緊固件孔之各者具有用於容納一緊固件之螺紋的內表面,該緊固件用於將該邊緣環的該環形體附接至一支撐環;一台階,從該頂側延伸至該內側之該垂直定向的內表面,其中該台階包含一呈角度的表面及一水平定向的內表面;及彎曲邊緣,形成於該頂側與該外側之間,其中,該邊緣環的所有邊緣係弧形的。 An edge ring for a plasma processing chamber, the edge ring having an annular body configured to surround a substrate support of the plasma processing chamber, the edge ring comprising: the annular body having a bottom side , a top side, an inner side, and an outer side, wherein the bottom side is a horizontally oriented surface extending from a vertically oriented inner surface of the inner side to the outer side; a plurality of fastener holes are disposed along the bottom side on the the annular body of the edge ring, wherein each of the plurality of fastener holes has an inner surface for receiving threads of a fastener for attaching the annular body of the edge ring to a support ring; a a step extending from the top side to the vertically oriented inner surface of the inner side, wherein the step includes an angled surface and a horizontally oriented inner surface; and a curved edge formed between the top side and the outer side, Wherein, all the edges of the edge ring are arc-shaped. 如申請專利範圍第9項之用於電漿處理腔室的邊緣環,其中該複數緊固件孔之各者不在該邊緣環之該環形體內形成通孔。 The edge ring for a plasma processing chamber as claimed in claim 9, wherein each of the plurality of fastener holes does not form a through hole in the annular body of the edge ring. 如申請專利範圍第9項之用於電漿處理腔室的邊緣環,其中該複數緊固件孔之各者並未沿著該環形體的整個長度延伸。 The edge ring for a plasma processing chamber of claim 9, wherein each of the plurality of fastener holes does not extend along the entire length of the ring body. 一種用於電漿處理腔室的蓋環,該蓋環包含:一環形體,其具有一上主體部分、一中間主體部分、及一下主體部分,其中該環形體係配置成圍繞一邊緣環且毗鄰一接地環,其中該上主體部分具有第一環形寬度,其中該中間主體部分自該上主體部分界定階梯式縮減部,使得該中間主體部分具有第二環形寬度,該第二環形寬度係小於該第一環形寬度,其中該下主體部分自該中間主體部分界定階梯式縮減部,使得該下主體部分具有第三環形寬度,該第三環形寬度係小於該第二環形寬度。 A cover ring for a plasma processing chamber, the cover ring comprising: an annular body having an upper body portion, a middle body portion, and a lower body portion, wherein the ring system is configured around an edge ring and adjacent to a A ground ring, wherein the upper body portion has a first annular width, wherein the intermediate body portion defines a stepped reduction from the upper body portion such that the intermediate body portion has a second annular width that is less than the A first annular width, wherein the lower body portion defines a stepped reduction from the intermediate body portion such that the lower body portion has a third annular width that is less than the second annular width. 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該蓋環係可消耗的且可更換的。 A cover ring for a plasma processing chamber as claimed in claim 12 of the patent application, wherein the cover ring is consumable and replaceable. 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該上主體部分、該中間主體部分、及該下主體部分對電壓提供從該邊緣環至該接地環之一路徑。 The cover ring for a plasma processing chamber of claim 12, wherein the upper body portion, the middle body portion, and the lower body portion provide a path for voltage from the edge ring to the ground ring . 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該中間主體部分之自該上主體部分的階梯式縮減部係在遠離該邊緣環的方向 上,而該下主體部分之自該中間主體部分的階梯式縮減部係在朝向該邊緣環的方向上。 A cover ring for a plasma processing chamber as claimed in claim 12, wherein the stepped reduction of the middle body portion from the upper body portion is directed away from the edge ring and the stepped reduction of the lower body portion from the middle body portion is in a direction towards the edge ring. 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該中間主體部分之自該上主體部分的階梯式縮減部係在朝向該邊緣環的方向上,而該下主體部分之自該中間主體部分的階梯式縮減部係在遠離該邊緣環的方向上。 A cover ring for a plasma processing chamber as claimed in claim 12, wherein the stepped reduction of the middle body portion from the upper body portion is directed towards the edge ring, and the lower body Part of the stepped reduction from the central body portion is directed away from the edge ring. 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該中間主體部分具有第一細長深度,而該下主體部分具有第二細長深度。 The cover ring for a plasma processing chamber of claim 12, wherein the middle body portion has a first elongated depth, and the lower body portion has a second elongated depth. 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該上主體部分具有水平定向的頂表面、與該水平定向的頂表面鄰接之彎曲邊緣、與該彎曲邊緣鄰接之垂直定向的外表面、與該水平定向的頂表面鄰接之垂直定向的內表面、與該垂直定向的內表面鄰接之水平定向的內表面、及與該垂直定向的外表面鄰接之水平定向的外表面,其中,該中間主體部分具有與該上主體部分之該水平定向的內表面鄰接之垂直定向的內表面,其中,該中間主體部分具有與該上主體部分之該水平定向的外表面鄰接之垂直定向的外表面、及與該中間主體部分之該垂直定向的外表面鄰接之水平定向的外表面,其中,該下主體部分具有與該中間主體部分之該水平定向的外表面鄰接之垂直定向的外表面、與該下主體部分之該垂直定向的外表面鄰 接之水平定向的底表面、及與該下主體部分之該水平定向的底表面和該中間主體部分之該垂直定向的內表面鄰接之垂直定向的內表面。 A cover ring for a plasma processing chamber as claimed in claim 12, wherein the upper body portion has a horizontally oriented top surface, a curved edge adjacent to the horizontally oriented top surface, and a curved edge adjacent to the curved edge a vertically oriented outer surface, a vertically oriented inner surface adjacent to the horizontally oriented top surface, a horizontally oriented inner surface adjacent to the vertically oriented inner surface, and a horizontally oriented outer surface adjacent to the vertically oriented outer surface surface, wherein the intermediate body portion has a vertically oriented inner surface adjacent to the horizontally oriented inner surface of the upper body portion, wherein the intermediate body portion has a vertically oriented inner surface adjacent to the horizontally oriented outer surface of the upper body portion a vertically oriented outer surface, and a horizontally oriented outer surface adjacent to the vertically oriented outer surface of the intermediate body portion, wherein the lower body portion has a vertically oriented outer surface adjacent to the horizontally oriented outer surface of the intermediate body portion adjacent to the vertically oriented outer surface of the lower body portion adjoining the horizontally oriented bottom surface, and a vertically oriented inner surface adjoining the horizontally oriented bottom surface of the lower body portion and the vertically oriented inner surface of the intermediate body portion. 如申請專利範圍第18項之用於電漿處理腔室的蓋環,其中該上主體部分在該上主體部分之該垂直定向的外表面與該上主體部分之該水平定向的外表面之間具有第二彎曲邊緣,其中該上主體部分在該上主體部分之該水平定向的頂表面與該上主體部分之該垂直定向的內表面之間具有第三彎曲邊緣,其中該上主體部分在該上主體部分之該垂直定向的內表面與該上主體部分之該水平定向的內表面之間具有第四彎曲邊緣。 A cover ring for a plasma processing chamber according to claim 18, wherein the upper body portion is between the vertically oriented outer surface of the upper body portion and the horizontally oriented outer surface of the upper body portion has a second curved edge, wherein the upper body portion has a third curved edge between the horizontally oriented top surface of the upper body portion and the vertically oriented inner surface of the upper body portion, wherein the upper body portion has a third curved edge between the There is a fourth curved edge between the vertically oriented inner surface of the upper body portion and the horizontally oriented inner surface of the upper body portion. 如申請專利範圍第19項之用於電漿處理腔室的蓋環,其中該中間主體部分在該上主體部分之該水平定向的外表面與該中間主體部分之該垂直定向的外表面之間具有第五彎曲邊緣,其中該中間主體部分在該上主體部分之該水平定向的內表面與該中間主體部分之該垂直定向的內表面之間具有第六彎曲邊緣,其中該中間主體部分在該中間主體部分之該垂直定向的外表面與該中間主體部分之該水平定向的外表面之間具有第七彎曲邊緣。 The cover ring for a plasma processing chamber of claim 19, wherein the middle body portion is between the horizontally oriented outer surface of the upper body portion and the vertically oriented outer surface of the middle body portion has a fifth curved edge, wherein the intermediate body portion has a sixth curved edge between the horizontally oriented inner surface of the upper body portion and the vertically oriented inner surface of the intermediate body portion, wherein the intermediate body portion is between the There is a seventh curved edge between the vertically oriented outer surface of the intermediate body portion and the horizontally oriented outer surface of the intermediate body portion. 如申請專利範圍第20項之用於電漿處理腔室的蓋環,其中該下主體部分在該中間主體部分之該水平定向的外表面與該下主體部分之該垂直定向的外表面之間具有第八彎曲邊緣,其中該下主體部分具有與該下主體部分之該垂直定向的外表面和該下主體部分之該水平定向的底表面鄰接之第九彎曲邊緣,其中該下主體部分在該下主體部分之該垂直定向的內表面與該下主體部分之該水平定向的底表面之間具有第十彎曲邊緣。 The cover ring for a plasma processing chamber of claim 20, wherein the lower body portion is between the horizontally oriented outer surface of the middle body portion and the vertically oriented outer surface of the lower body portion has an eighth curved edge, wherein the lower body portion has a ninth curved edge adjacent to the vertically oriented outer surface of the lower body portion and the horizontally oriented bottom surface of the lower body portion, wherein the lower body portion is on the There is a tenth curved edge between the vertically oriented inner surface of the lower body portion and the horizontally oriented bottom surface of the lower body portion. 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該蓋環的內邊緣係弧形的以減少該內邊緣與該邊緣環間之電弧放電的可能性。 The cover ring for a plasma processing chamber as claimed in claim 12, wherein the inner edge of the cover ring is curved to reduce the possibility of arcing between the inner edge and the edge ring. 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該蓋環的所有邊緣係弧形的。 A cover ring for a plasma processing chamber as claimed in claim 12 of the patent application, wherein all edges of the cover ring are arc-shaped. 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該中間主體部分之一垂直定向的外表面係配置成被該接地環所圍繞,該下主體部分之一垂直定向的外表面係配置成被一基環所圍繞。 A cover ring for a plasma processing chamber according to claim 12, wherein a vertically oriented outer surface of the middle body portion is configured to be surrounded by the grounding ring, and a vertically oriented one of the lower body portions The outer surface of is configured to be surrounded by a base ring. 如申請專利範圍第12項之用於電漿處理腔室的蓋環,其中,該上主體部分之一垂直定向的內表面係配置成圍繞該邊緣環,該中間主體部分之一垂直定向的外表面係配置成被該接地環所圍繞,該下主體部分之一垂直定向的外表面係配置成被一基環所圍繞。 A cover ring for a plasma processing chamber as claimed in claim 12, wherein a vertically oriented inner surface of the upper body portion is configured to surround the edge ring, and a vertically oriented outer surface of the middle body portion A surface is configured to be surrounded by the ground ring, and a vertically oriented outer surface of the lower body portion is configured to be surrounded by a base ring. 一種用於固定電漿腔室之邊緣環的系統,包含:一支撐環;定向在該支撐環上方的一邊緣環;一膠體層,配置在該邊緣環的底表面與該支撐環的頂表面之間;複數螺釘,配置成將該邊緣環固定至該支撐環,該複數螺釘的其中各者附接至配置在該邊緣環的該底表面內且穿過該支撐環的螺釘孔; 複數壓緊桿,連接至該支撐環的底表面;及複數氣動活塞,其中該複數氣動活塞的其中各者係耦接至該複數壓緊桿之一個別者用以使該支撐環及該邊緣環在一垂直方向上同時運動。 A system for securing an edge ring of a plasma chamber, comprising: a support ring; an edge ring oriented above the support ring; a gel layer disposed on the bottom surface of the edge ring and the top surface of the support ring between; a plurality of screws configured to fix the edge ring to the support ring, each of the plurality of screws being attached to a screw hole configured in the bottom surface of the edge ring and passing through the support ring; a plurality of compression rods connected to the bottom surface of the support ring; and a plurality of pneumatic pistons, wherein each of the plurality of pneumatic pistons is coupled to an individual one of the plurality of compression rods for enabling the support ring and the edge The rings move simultaneously in a vertical direction. 如申請專利範圍第26項之用於固定電漿腔室之邊緣環的系統,其中,該複數氣動活塞係配置成對該複數壓緊桿施加下拉力,使得在電漿腔室內之一基板的處理期間將該邊緣環及該支撐環固定至一絕緣體環。 The system for fixing the edge ring of the plasma chamber as claimed in claim 26, wherein the plurality of pneumatic pistons are configured to apply a pull-down force to the plurality of compression rods, so that a substrate in the plasma chamber The edge ring and the support ring are secured to an insulator ring during processing. 如申請專利範圍第26項之用於固定電漿腔室之邊緣環的系統,其中,該複數氣動活塞係配置成將該複數壓緊桿向上推,以自該電漿腔室移除該邊緣環及該支撐環以供維修。 The system for securing an edge ring of a plasma chamber as claimed in claim 26, wherein the plurality of pneumatic pistons is configured to push the plurality of compression rods upward to remove the edge from the plasma chamber ring and the support ring for maintenance. 如申請專利範圍第26項之用於固定電漿腔室之邊緣環的系統,更包含:一絕緣體環,配置在該支撐環下方;及複數扣緊機構,配置成具有該複數壓緊桿,其中該複數壓緊桿的其中各者具有在該支撐環內延伸的部分及在該絕緣體環內延伸的部分,其中該複數扣緊機構的其中各者係配置成將該複數壓緊桿之個別者下拉,以在該電漿腔室內的處理操作期間將該支撐環及該邊緣環與該絕緣體環接合、及相對於該絕緣體環將該支撐環及該邊緣環上推以釋放該支撐環及該邊緣環。 For example, the system for fixing the edge ring of the plasma chamber as claimed in claim 26 of the patent application further includes: an insulator ring disposed under the support ring; and a plurality of fastening mechanisms configured to have the plurality of pressing rods, wherein each of the plurality of compression rods has a portion extending within the support ring and a portion extending within the insulator ring, wherein each of the plurality of fastening mechanisms is configured to individual ones of the plurality of compression rods or pull down to engage the support ring and the edge ring with the insulator ring during processing operations within the plasma chamber, and push the support ring and the edge ring up relative to the insulator ring to release the support ring and The edge ring. 如申請專利範圍第29項之用於固定電漿腔室之邊緣環的系統,其中,該複數扣緊機構的其中各者包含:一氣缸;在該氣缸內的一活塞體;附接至該活塞體的一活塞桿;及一安裝座,配置成相對於該氣缸安裝該複數壓緊桿之一個別者。 The system for securing an edge ring of a plasma chamber as claimed in claim 29, wherein each of the plurality of fastening mechanisms comprises: a cylinder; a piston body within the cylinder; attached to the a piston rod of the piston body; and a mounting seat configured to mount an individual one of the plurality of compression rods relative to the cylinder. 如申請專利範圍第30項之用於固定電漿腔室之邊緣環的系統,更包含:配置成將經壓縮的空氣供應至該等氣缸的頂部部分以將該複數壓緊桿下拉的空氣路線;及配置成將經壓縮的空氣供應至該等氣缸的底部部分以將該複數壓緊桿上推的空氣路線。 A system for securing an edge ring of a plasma chamber as claimed in claim 30, further comprising: an air route configured to supply compressed air to the top portions of the cylinders to pull down the plurality of compression rods and an air route configured to supply compressed air to the bottom portion of the cylinders to push up the plurality of compression rods. 如申請專利範圍第26項之用於固定電漿腔室之邊緣環的系統,其中該複數氣動活塞的第一者係第一扣緊機構的一部分,其中該複數氣動活塞的第二者係第二扣緊機構的一部分,其中該複數氣動活塞的第三者係第三扣緊機構的一部分,該系統更包含:該第二扣緊機構,配置成在與該第一扣緊機構將該支撐環及該邊緣環固定至一絕緣體環之位置相比的不同位置處,將該支撐環及該邊緣環固定至該絕緣體環;該第三扣緊機構,配置成在與該第二扣緊機構將該支撐環及該邊緣環固定至該絕緣體環之位置、及該第一扣緊機構將該支撐環及該邊緣 環固定至該絕緣體環之位置相比的不同位置處,將該支撐環及該邊緣環固定至該絕緣體環。 A system for securing an edge ring of a plasma chamber as claimed in claim 26, wherein the first of the plurality of pneumatic pistons is part of a first fastening mechanism, and wherein the second of the plurality of pneumatic pistons is the second Part of two fastening mechanisms, wherein the third of the plurality of pneumatic pistons is part of a third fastening mechanism, the system further includes: the second fastening mechanism configured to cooperate with the first fastening mechanism to support the ring and the edge ring are fixed to a position different from that of an insulator ring, the support ring and the edge ring are fixed to the insulator ring; securing the support ring and the edge ring to the position of the insulator ring, and the first fastening mechanism A ring is secured to the insulator ring at a different location than that of the insulator ring, the support ring and the edge ring are secured to the insulator ring.
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