TWI778864B - Gate driving circuit and display panel - Google Patents
Gate driving circuit and display panel Download PDFInfo
- Publication number
- TWI778864B TWI778864B TW110142297A TW110142297A TWI778864B TW I778864 B TWI778864 B TW I778864B TW 110142297 A TW110142297 A TW 110142297A TW 110142297 A TW110142297 A TW 110142297A TW I778864 B TWI778864 B TW I778864B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- signal
- light
- emitting
- node
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 22
- 238000003491 array Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims 1
- 101100102583 Schizosaccharomyces pombe (strain 972 / ATCC 24843) vgl1 gene Proteins 0.000 description 15
- 102100023478 Transcription cofactor vestigial-like protein 1 Human genes 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 102100021699 Eukaryotic translation initiation factor 3 subunit B Human genes 0.000 description 5
- 101000896557 Homo sapiens Eukaryotic translation initiation factor 3 subunit B Proteins 0.000 description 5
- 101100102598 Mus musculus Vgll2 gene Proteins 0.000 description 5
- 102100023477 Transcription cofactor vestigial-like protein 2 Human genes 0.000 description 5
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 5
- 101100059990 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CHO2 gene Proteins 0.000 description 4
- 101100297830 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) OPI3 gene Proteins 0.000 description 4
- 101100354809 Caenorhabditis elegans pxl-1 gene Proteins 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Road Signs Or Road Markings (AREA)
- Control Of El Displays (AREA)
Abstract
Description
本發明是有關於一種閘極驅動電路以及顯示面板,特別是關於一種能夠減少所佔用空間的閘極驅動電路以及顯示面板。 The present invention relates to a gate driving circuit and a display panel, and more particularly, to a gate driving circuit and a display panel which can reduce the occupied space.
一般而言,顯示面板中的閘極驅動電路輸出發光信號來驅動畫素。同時,發光信號會配合重置信號來一起使畫素發光或不發光。然而,目前用來產生重置信號的電路與閘極驅動電路分別受控於不同的控制信號。因此當設置多個畫素來平衡變異的發光效率時,也需要設置多個控制電路來對應控制重置信號以及發光信號,而使顯示面板的可配置電路空間變少且不利於零邊框設計的顯示面板。 Generally speaking, a gate driving circuit in a display panel outputs a light-emitting signal to drive pixels. At the same time, the light-emitting signal will cooperate with the reset signal to make the pixel light up or not. However, the current circuit for generating the reset signal and the gate driving circuit are controlled by different control signals. Therefore, when multiple pixels are set to balance the variable luminous efficiency, it is also necessary to set multiple control circuits to control the reset signal and the luminous signal correspondingly, which reduces the configurable circuit space of the display panel and is not conducive to the display of the zero-frame design. panel.
本發明實施例提供一種閘極驅動電路,能夠增加可配置於顯示面板上的電路空間。 Embodiments of the present invention provide a gate driving circuit, which can increase the circuit space that can be configured on a display panel.
本發明實施例的閘極驅動電路具有多級移位暫存電路。第n級的移位暫存電路包括發光信號產生電路、發光信號控制電 路、重置信號產生電路以及重置信號控制電路。發光信號產生電路具有第一節點輸出發光信號至畫素陣列。在第一發光階段至第二發光階段的期間內,發光信號產生電路致能發光信號。發光信號控制電路耦接於第一節點。在第一重置階段至第二重置階段的期間內,發光信號控制電路維持發光信號的電壓準位為禁能的電壓準位。重置信號產生電路耦接於第一節點。在第一重置階段期間內,重置信號產生電路反應於發光信號來產生被致能的重置信號。重置信號控制電路耦接於發光信號控制電路以及重置信號產生電路。在第二重置階段期間內,重置信號控制電路反應於發光信號來使重置信號被禁能。 The gate driving circuit of the embodiment of the present invention has a multi-stage shift temporary storage circuit. The shift temporary storage circuit of the nth stage includes a light-emitting signal generating circuit, a light-emitting signal control circuit circuit, a reset signal generating circuit and a reset signal control circuit. The light-emitting signal generating circuit has a first node to output the light-emitting signal to the pixel array. During the period from the first light-emitting stage to the second light-emitting stage, the light-emitting signal generating circuit enables the light-emitting signal. The lighting signal control circuit is coupled to the first node. During the period from the first reset phase to the second reset phase, the lighting signal control circuit maintains the voltage level of the lighting signal as a disabled voltage level. The reset signal generating circuit is coupled to the first node. During the first reset phase, the reset signal generating circuit generates an enabled reset signal in response to the light-emitting signal. The reset signal control circuit is coupled to the lighting signal control circuit and the reset signal generating circuit. During the second reset phase, the reset signal control circuit is responsive to the lighting signal to disable the reset signal.
本發明實施例另提供一種顯示面板。顯示面板包括畫素陣列以及上述實施例的閘極驅動電路。閘極驅動電路耦接於畫素陣列。 Embodiments of the present invention further provide a display panel. The display panel includes a pixel array and the gate driving circuit of the above embodiment. The gate driving circuit is coupled to the pixel array.
基於上述,本發明實施例的閘極驅動電路及顯示面板是依據發光信號來產生重置信號。如此一來,用來產生發光信號的電路以及用來產生重置信號的電路被整合在一起,閘極驅動電路及顯示面板不需要另外設置控制電路來產生重置信號,以減少閘極驅動電路本身所佔用的電路空間而增加顯示面板上可配置的電路空間。 Based on the above, the gate driving circuit and the display panel according to the embodiments of the present invention generate the reset signal according to the light-emitting signal. In this way, the circuit for generating the light-emitting signal and the circuit for generating the reset signal are integrated, and the gate driving circuit and the display panel do not need to be additionally provided with a control circuit to generate the reset signal, so as to reduce the number of gate driving circuits. The circuit space occupied by itself increases the configurable circuit space on the display panel.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.
100、500:顯示面板 100, 500: Display panel
110、210:發光信號產生電路 110, 210: Lighting signal generating circuit
120、220:發光信號控制電路 120, 220: Lighting signal control circuit
130、230:重置信號產生電路 130, 230: reset signal generating circuit
140、240:重置信號控制電路 140, 240: reset signal control circuit
C1、C2:電容器 C1, C2: capacitors
CK:時脈信號 CK: clock signal
EM(n+1):後級發光信號 EM(n+1): Post-stage lighting signal
EM(n-1):前級發光信號 EM(n-1): Pre-stage luminous signal
EM(1)、EM(2)、EM(n):發光信號 EM(1), EM(2), EM(n): luminescence signal
GC:閘極驅動電路 GC: gate drive circuit
GC_1、GC_2、GC_n:移位暫存電路 GC_1, GC_2, GC_n: Shift temporary storage circuit
ND1、ND2、ND3、ND4:節點 ND1, ND2, ND3, ND4: Nodes
P(n):第一控制信號 P(n): first control signal
P(n+1):後級第一控制信號 P(n+1): The first control signal of the latter stage
P(n-1):前級第一控制信號 P(n-1): The first control signal of the previous stage
PEM1、PEM2、PRT1、PRT2:期間 PEM1, PEM2, PRT1, PRT2: Period
PXL:畫素陣列 PXL: pixel array
PXL_1、PXL_2:子畫素陣列 PXL_1, PXL_2: Subpixel array
Q(n):第二控制信號 Q(n): the second control signal
R:電阻器 R: Resistor
RST(1)、RST(2)、RST(n):重置信號 RST(1), RST(2), RST(n): reset signal
T1、T2、T3、T4、T5、T6、T7、T8、T9、T10、T11、T12、T13:電晶體 T1, T2, T3, T4, T5, T6, T7, T8, T9, T10, T11, T12, T13: Transistor
VGH1、VPH:禁能電壓準位 VGH1, VPH: disable voltage level
VGL、VGH:電壓信號 VGL, VGH: voltage signal
VGL1、VGL2、VPL:致能電壓準位 VGL1, VGL2, VPL: enable voltage level
圖1A是依據本發明一實施例所繪示的顯示面板的方塊圖。 FIG. 1A is a block diagram of a display panel according to an embodiment of the present invention.
圖1B是依據本發明圖1A實施例所繪示的第n級的移位暫存電路的方塊圖。 FIG. 1B is a block diagram of the n-th stage of the shift register circuit according to the embodiment of FIG. 1A of the present invention.
圖2是依據本發明圖1B實施例所繪示的第n級的移位暫存電路的電路圖。 FIG. 2 is a circuit diagram of the n-th stage shift register circuit according to the embodiment of FIG. 1B of the present invention.
圖3是依據本發明圖2實施例所繪示的第n級的移位暫存電路的動作示意圖。 3 is a schematic diagram of the operation of the n-th stage of the shift register circuit shown in the embodiment of FIG. 2 according to the present invention.
圖4A至圖4D是依據本發明圖3實施例所繪示的第n級的移位暫存電路的動作示意圖。 4A to 4D are schematic diagrams illustrating operations of the n-th stage of the shift register circuit according to the embodiment of FIG. 3 of the present invention.
圖5是依據本發明另一實施例所繪示的顯示面板的方塊圖。 FIG. 5 is a block diagram of a display panel according to another embodiment of the present invention.
本發明的部份實施例接下來將會配合附圖來詳細描述,以下的描述所引用的元件符號,當不同附圖出現相同的元件符號將視為相同或相似的元件。這些實施例只是本發明的一部份,並未揭示所有本發明的可實施方式。更確切的說,這些實施例只是本發明的專利申請範圍中的範例。 Some embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Element symbols quoted in the following description will be regarded as the same or similar elements when the same element symbols appear in different drawings. These examples are only a part of the invention and do not disclose all possible embodiments of the invention. Rather, these embodiments are only examples within the scope of the patent application of the present invention.
請參考圖1A,圖1A是依據本發明一實施例所繪示的顯示面板的方塊圖。在本實施例中,顯示面板100包括畫素陣列PXL以及閘極驅動電路GC。閘極驅動電路GC具有多級移位暫存電路
GC_1、GC_2、...、GC_n。多級移位暫存電路GC_1~GC_n依序耦接在一起。每一級的移位暫存電路GC_1~GC_n耦接於畫素陣列PXL。具體來說,第1級的移位暫存電路GC_1輸出第1級的發光信號EM(1)以及重置信號RST(1)至畫素陣列PXL中的第一畫素列。第2級的移位暫存電路GC_2輸出第2級的發光信號EM(2)以及重置信號RST(2)至畫素陣列PXL中的第二畫素列,以此類推。第n級的移位暫存電路GC_n輸出第n級的發光信號EM(n)以及重置信號RST(n)至畫素陣列PXL中對應的畫素列。
Please refer to FIG. 1A . FIG. 1A is a block diagram of a display panel according to an embodiment of the present invention. In this embodiment, the
在本實施例中,每一級的移位暫存電路GC_1~GC_n可具有相同的電路架構。 In this embodiment, the shift register circuits GC_1 ˜GC_n of each stage may have the same circuit structure.
請一併參考圖1B,圖1B是依據本發明圖1A實施例所繪示的第n級的移位暫存電路的方塊圖。在本實施例中,第n級的移位暫存電路GC_n包括發光信號產生電路110、發光信號控制電路120、重置信號產生電路130以及重置信號控制電路140。發光信號產生電路110具有節點ND1。發光信號產生電路110的節點ND1輸出發光信號EM(n)至畫素陣列PXL。在本實施例中,發光信號產生電路110用以在對應的發光階段的期間中,致能發光信號EM(n)以驅動畫素陣列PXL。
Please refer to FIG. 1B together. FIG. 1B is a block diagram of the n-th stage of the shift register circuit according to the embodiment of FIG. 1A of the present invention. In this embodiment, the n-th stage of the shift buffer circuit GC_n includes a lighting
發光信號控制電路120耦接於節點ND1。在本實施例中,在重置階段的期間內,發光信號控制電路120使發光信號EM(n)維持為禁能的電壓準位。
The lighting
重置信號產生電路130耦接於節點ND1。重置信號產生
電路130具有輸出端以輸出重置信號RST(n)至畫素陣列PXL。在本實施例中,在重置階段期間的前期,重置信號產生電路130反應於發光信號EM(n)來產生被致能的重置信號RST(n)以重置畫素陣列PXL。
The reset
重置信號控制電路140耦接於發光信號控制電路120。重置信號控制電路140耦接於重置信號產生電路130的輸出端。重置信號控制電路140具有輸入端以接收發光信號EM(n)。在本實施例中,在重置階段期間的後期,重置信號控制電路140反應於發光信號EM(n)來使重置信號RST(n)被禁能以停止重置畫素陣列PXL。
The reset
在本實施例中,發光階段發生在重置階段之前。 In this embodiment, the lighting phase occurs before the reset phase.
在此值得一提的是,重置信號產生電路130以及重置信號控制電路140是依據發光信號EM(n)來致能或禁能重置信號RST(n)。如此一來,第n級的移位暫存電路GC_n不需要設置額外的電路來產生重置信號RST(n)。因此,用來產生發光信號EM(n)的電路以及用來產生重置信號RST(n)的電路被整合在相同的第n級的移位暫存電路GC_n中,以減少第n級的移位暫存電路GC_n所佔用的電路空間而使顯示面板100上可配置的電路空間被提升以利於設計零邊框的顯示面板100。
It is worth mentioning here that the reset
請參考圖2,圖2是依據本發明圖1B實施例所繪示的第n級的移位暫存電路的電路圖。在本實施例中,第n級的移位暫存電路GC_n包括發光信號產生電路210、發光信號控制電路220、
重置信號產生電路230以及重置信號控制電路240。
Please refer to FIG. 2 . FIG. 2 is a circuit diagram of the n-th stage of the shift register circuit according to the embodiment of FIG. 1B of the present invention. In this embodiment, the shift temporary storage circuit GC_n of the nth stage includes a light-emitting
在本實施例中,重置信號產生電路230包括電晶體T1、T2以及電容器C1。電晶體T1的控制端耦接於節點ND1。電晶體T1受控於節點ND1上的信號(即,發光信號EM(n))來進行開關操作。電晶體T1的第一端接收前級第一控制信號P(n-1)。電晶體T1的第二端與重置信號控制電路240耦接於節點ND2。電晶體T2的控制端耦接於節點ND2。電晶體T2受控於節點ND2上的信號來進行開關操作。電晶體T2的第一端接收時脈信號CK。電晶體T2的第二端輸出重置信號RST(n)。電容器C1的第一端耦接於節點ND2。電容器C1的第二端耦接於電晶體T2的第二端。在本實施例中,電容器C1的第二端與電晶體T2的第二端作為重置信號產生電路230的輸出端以輸出重置信號RST(n)。
In this embodiment, the reset
在本實施例中,重置信號控制電路240包括電晶體T3、T4以及T5。電晶體T3的控制端接收後級第一控制信號P(n+1)。電晶體T3的第一端耦接於節點ND2。電晶體T3的第二端接收電壓信號VGH。在本實施例中,電壓信號VGH可以稱為第一電壓信號VGH。電晶體T4的控制端耦接於電晶體T3的控制端。電晶體T3、T4一同受控於後級第一控制信號P(n+1)來進行開關操作。電晶體T4的第一端耦接於電晶體T2的第二端以及電容器C1的第二端(即,重置信號產生電路230的輸出端)。電晶體T4的第二端接收電壓信號VGH。電晶體T5的控制端接收發光信號EM(n)。電晶體T5受控於發光信號EM(n)來進行開關操作。在本
實施例中,電晶體T5的控制端作為重置信號控制電路240的輸入端。電晶體T5的第一端耦接於電晶體T2的第二端以及電容器C1的第二端。電晶體T5的第二端接收電壓信號VGH。
In this embodiment, the reset
在本實施例中,發光信號產生電路210包括電晶體T6、T7以及電容器C2。電晶體T6的控制端接收時脈信號CK。電晶體T6受控於時脈信號CK來進行開關操作。電晶體T6的第一端接收前級發光信號EM(n-1)。電晶體T6的第二端耦接於節點ND3。電容器C2的第一端接收後級發光信號EM(n+1)。電容器C2的第二端耦接於節點ND3。電晶體T7的控制端耦接於節點ND3。電晶體T7受控於節點ND3上的信號(即,第二控制信號Q(n))來進行開關操作。電晶體T7的第一端接收電壓信號VGL。在本實施例中,電壓信號VGL可以稱為第二電壓信號VGL。電晶體T7的第二端耦接於節點ND1。在本實施例中,電晶體T7的第二端作為發光信號產生電路210的輸出端以輸出發光信號EM(n)。
In this embodiment, the light-emitting
在本實施例中,發光信號控制電路220包括電晶體T8、T9、T10、T11、T12、T13以及電阻器R。電晶體T8的控制端耦接於電晶體T8的第一端。電晶體T8的控制端及第一端接收時脈信號CK。電晶體T8耦接成二極體的組態,並接收時脈信號CK。電晶體T9的控制端接收前級發光信號EM(n-1)。電晶體T9受控於前級發光信號EM(n-1)來進行開關操作。電晶體T9的第一端耦接於電晶體T8的第二端。電晶體T9的第二端接收電壓信號VGH。電晶體T10的控制端耦接於電晶體T8的第二端以及電晶
體T9的第一端。電晶體T10的第一端耦接於電晶體T8的控制端以及第一端。電晶體T10的第二端耦接於電阻器R的第一端。電阻器R的第二端耦接於節點ND4。電晶體T11的控制端接收第二控制信號Q(n)。電晶體T11受控於第二控制信號Q(n)來進行開關操作。電晶體T11的第一端耦接於節點ND4。電晶體T11的第二端接收電壓信號VGH。電晶體T12的控制端耦接於節點ND4。電晶體T12的第一端耦接於節點ND3。電晶體T12的第二端接收電壓信號VGH。電晶體T13的控制端耦接於電晶體T12的控制端(即,節點ND4)。電晶體T12、T13一同受控於節點ND4上的信號(即,第一控制信號P(n))來進行開關操作。電晶體T13的第一端耦接於節點ND1。電晶體T13的第二端接收電壓信號VGH。
In this embodiment, the lighting
在本實施例中,電壓信號VGH、VGL為不同的定電壓信號。在本實施例中,電壓信號VGH具有被禁能的電壓準位以禁能電晶體T1~T13中任一者。電壓信號VGL具有被致能的電壓準位以致能電晶體T1~T13中任一者。電壓信號VGH可具有相對高的電壓準位,電壓信號VGL則可具有相對低的電壓準位。 In this embodiment, the voltage signals VGH and VGL are different constant voltage signals. In this embodiment, the voltage signal VGH has a disabled voltage level to disable any one of the transistors T1 ˜ T13 . The voltage signal VGL has an enabled voltage level to enable any one of the transistors T1 ˜ T13 . The voltage signal VGH may have a relatively high voltage level, and the voltage signal VGL may have a relatively low voltage level.
請參考圖3以及圖4A至圖4D,圖3是依據本發明圖2實施例所繪示的第n級的移位暫存電路的動作示意圖。圖4A至圖4D是依據本發明圖3實施例所繪示的第n級的移位暫存電路的動作示意圖。在圖3中,橫軸為第n級的移位暫存電路GC_n的操作時間,縱軸為電壓值。 Please refer to FIG. 3 and FIGS. 4A to 4D . FIG. 3 is a schematic diagram illustrating the operation of the n-th stage of the shift register circuit according to the embodiment of FIG. 2 of the present invention. 4A to 4D are schematic diagrams illustrating operations of the n-th stage of the shift register circuit according to the embodiment of FIG. 3 of the present invention. In FIG. 3 , the horizontal axis is the operation time of the n-th stage shift buffer circuit GC_n, and the vertical axis is the voltage value.
關於第n級的移位暫存電路GC_n在第一發光階段的期 間PEM1內的操作細節,請同時參照圖3以及圖4A。在第一發光階段期間PEM1內,發光信號EM(n)具有致能電壓準位VGL2。在本實施例中,致能電壓準位VGL2如以下公式(1)所示:VGL2=VGL1+2×|VTH|......公式(1) Regarding the period of the shift register circuit GC_n of the nth stage in the first light-emitting stage For details of operations in the PEM1, please refer to FIG. 3 and FIG. 4A at the same time. During the first light-emitting phase period PEM1, the light-emitting signal EM(n) has an enable voltage level VGL2. In this embodiment, the enabling voltage level VGL2 is shown in the following formula (1): VGL2=VGL1+2×|VTH|...Formula (1)
在公式(1)中,VGL1表示為電壓信號VGL的電壓準位(即,致能電壓準位VGL1)。VTH表示為電晶體T1~T13中任一者的閾值電壓準位。在本實施例中,電壓信號VGH具有禁能電壓準位VGH1。 In formula (1), VGL1 is expressed as the voltage level of the voltage signal VGL (ie, the enable voltage level VGL1 ). VTH represents the threshold voltage level of any one of the transistors T1 to T13. In this embodiment, the voltage signal VGH has a disable voltage level VGH1.
被致能的發光信號EM(n)導通電晶體T1、T5。被導通的電晶體T1輸出前級第一控制信號P(n-1)至電晶體T2的控制端。前級第一控制信號P(n-1)具有禁能電壓準位VPH。被禁能的前級第一控制信號P(n-1)關斷電晶體T2。後級第一控制信號P(n+1)具有致能電壓準位VPL。被致能的後級第一控制信號P(n+1)導通電晶體T3、T4。被導通的電晶體T3、T4分別將電容器C1兩端上的信號拉至電壓信號VGH(即,禁能電壓準位VGH1)以使重置信號RST(n)被禁能。 The enabled light-emitting signal EM(n) turns on the transistors T1 and T5. The turned-on transistor T1 outputs the first control signal P(n-1) of the previous stage to the control terminal of the transistor T2. The first control signal P(n-1) of the previous stage has a disable voltage level VPH. The disabled first control signal P(n-1) of the preceding stage turns off the transistor T2. The post-stage first control signal P(n+1) has an enable voltage level VPL. The enabled first control signal P(n+1) of the subsequent stage turns on the transistors T3 and T4. The turned-on transistors T3 and T4 respectively pull the signals across the capacitor C1 to the voltage signal VGH (ie, the disable voltage level VGH1 ) to disable the reset signal RST(n).
在另一方面,在第一發光階段的期間PEM1內,前級發光信號EM(n-1)具有致能電壓準位VGL1。被致能的前級發光信號EM(n-1)導通電晶體T9。被導通的電晶體T9將電晶體T10的控制端上的信號拉至電壓信號VGH(即,禁能電壓準位VGH1)以關斷電晶體T10。時脈信號CK具有致能電壓準位VGL1。時脈信號CK可使電晶體T6、T8被導通。被導通的電晶體T6將節點 ND3上的第二控制信號Q(n)拉至被致能的前級發光信號EM(n-1)(即,致能電壓準位VGL1)以導通電晶體T7。被致能的第二控制信號Q(n)導通電晶體T11。被導通的電晶體T11將節點ND4上的第一控制信號P(n)拉至電壓信號VGH(即,禁能電壓準位VGH1)以關斷電晶體T12、T13。被導通的電晶體T7將發光信號EM(n)拉至電壓信號VGL(即,致能電壓準位VGL1)而輸出被致能的發光信號EM(n)。 On the other hand, in the period PEM1 of the first light-emitting stage, the previous-stage light-emitting signal EM(n-1) has an enable voltage level VGL1. The enabled front-stage light-emitting signal EM(n-1) turns on the transistor T9. The turned-on transistor T9 pulls the signal on the control terminal of the transistor T10 to the voltage signal VGH (ie, the disable voltage level VGH1) to turn off the transistor T10. The clock signal CK has an enable voltage level VGL1. The clock signal CK enables the transistors T6 and T8 to be turned on. Transistor T6 being turned on will node The second control signal Q(n) on the ND3 is pulled to the enabled pre-emission signal EM(n-1) (ie, the enable voltage level VGL1) to turn on the transistor T7. The enabled second control signal Q(n) turns on the transistor T11. The turned-on transistor T11 pulls the first control signal P(n) on the node ND4 to the voltage signal VGH (ie, the disable voltage level VGH1) to turn off the transistors T12, T13. The turned-on transistor T7 pulls the light-emitting signal EM(n) to the voltage signal VGL (ie, the enable voltage level VGL1 ) to output the enabled light-emitting signal EM(n).
關於第n級的移位暫存電路GC_n在第二發光階段的期間PEM2內的操作細節,請同時參照圖3以及圖4B。在第二發光階段PEM2的期間內,後級第一控制信號P(n+1)具有禁能電壓準位VPH。被禁能的後級第一控制信號P(n+1)關斷電晶體T3、T4。發光信號EM(n)具有致能電壓準位VGL1。被致能的發光信號EM(n)導通電晶體T1、T5。被導通的電晶體T1輸出前級第一控制信號P(n-1)至節點ND2。前級第一控制信號P(n-1)具有致能電壓準位VPL。被致能的前級第一控制信號P(n-1)導通電晶體T2。時脈信號CK具有禁能電壓準位VGH1以使被導通的電晶體T2輸出被禁能的重置信號RST(n)。 Please refer to FIG. 3 and FIG. 4B for details of the operation of the n-th stage of the shift buffer circuit GC_n in the period PEM2 of the second light-emitting stage. During the second light-emitting phase PEM2, the subsequent first control signal P(n+1) has a disable voltage level VPH. The disabled first control signal P(n+1) of the subsequent stage turns off the transistors T3 and T4. The light-emitting signal EM(n) has an enable voltage level VGL1. The enabled light-emitting signal EM(n) turns on the transistors T1 and T5. The turned-on transistor T1 outputs the first control signal P(n-1) of the previous stage to the node ND2. The first control signal P(n-1) of the previous stage has an enabling voltage level VPL. The enabled first control signal P(n-1) of the previous stage turns on the transistor T2. The clock signal CK has a disable voltage level VGH1 so that the turned-on transistor T2 outputs the disabled reset signal RST(n).
在另一方面,在第二發光階段的期間PEM2內,前級發光信號EM(n-1)具有禁能電壓準位VGH1。被禁能的前級發光信號EM(n-1)關斷電晶體T9。電晶體T10則維持被關斷。時脈信號CK具有禁能電壓準位VGH1。時脈信號CK可使電晶體T6、T8被關斷。被關斷的電晶體T6使節點ND3浮接。如此一來,電 容器C2可將後級發光信號EM(n+1)的變化耦合至節點ND3來改變節點ND3上的信號。此時,後級發光信號EM(n+1)具有致能電壓準位VGL2。透過電容器C2,被致能的後級發光信號EM(n+1)可拉低節點ND3上的第二控制信號Q(n)以導通電晶體T7。被致能的第二控制信號Q(n)導通電晶體T11。被導通的電晶體T11將節點ND4上的第一控制信號P(n)拉至電壓信號VGH(即,禁能電壓準位VGH1)以關斷電晶體T12、T13。被導通的電晶體T7將發光信號EM(n)拉至電壓信號VGL(即,致能電壓準位VGL1)以輸出被致能的發光信號EM(n)。 On the other hand, in the period PEM2 of the second light-emitting stage, the previous-stage light-emitting signal EM(n-1) has a disable voltage level VGH1. The disabled pre-stage light-emitting signal EM(n-1) turns off the transistor T9. The transistor T10 remains turned off. The clock signal CK has a disable voltage level VGH1. The clock signal CK can turn off the transistors T6 and T8. Transistor T6, which is turned off, floats node ND3. Thus, electricity The container C2 can couple the change of the subsequent stage lighting signal EM(n+1) to the node ND3 to change the signal on the node ND3. At this time, the subsequent-stage light-emitting signal EM(n+1) has an enable voltage level VGL2. Through the capacitor C2, the enabled post-stage lighting signal EM(n+1) can pull down the second control signal Q(n) on the node ND3 to turn on the transistor T7. The enabled second control signal Q(n) turns on the transistor T11. The turned-on transistor T11 pulls the first control signal P(n) on the node ND4 to the voltage signal VGH (ie, the disable voltage level VGH1) to turn off the transistors T12, T13. The turned-on transistor T7 pulls the light-emitting signal EM(n) to the voltage signal VGL (ie, the enable voltage level VGL1 ) to output the enabled light-emitting signal EM(n).
關於第n級的移位暫存電路GC_n在第一重置階段的期間PRT1內的操作細節,請同時參照圖3以及圖4C。在第一重置階段的期間PRT1的期間內,發光信號EM(n)具有禁能電壓準位VGH1。被禁能的發光信號EM(n)關斷電晶體T1、T5。後級第一控制信號P(n+1)具有禁能電壓準位VPH。被禁能的後級第一控制信號P(n+1)關斷電晶體T3、T4。被關斷的電晶體T1、T3使節點ND2浮接。如此一來,電容器C1可將重置信號RST(n)的變化耦合至節點ND2來改變節點ND2上的信號。此時,重置信號RST(n)可具有致能電壓準位VGL1。被致能的重置信號RST(n)可使電晶體T2被導通。此時,時脈信號CK具有致能電壓準位VGL1則可使被導通的電晶體T2輸出被致能的重置信號RST(n)。 Please refer to FIG. 3 and FIG. 4C for details of the operation of the n-th stage shift register circuit GC_n in the period PRT1 of the first reset phase. During the period PRT1 of the first reset phase, the light-emitting signal EM(n) has a disable voltage level VGH1. The disabled light-emitting signal EM(n) turns off the transistors T1, T5. The post-stage first control signal P(n+1) has a disable voltage level VPH. The disabled first control signal P(n+1) of the subsequent stage turns off the transistors T3 and T4. The turned-off transistors T1, T3 float node ND2. As such, capacitor C1 may couple changes in reset signal RST(n) to node ND2 to change the signal on node ND2. At this time, the reset signal RST(n) may have the enable voltage level VGL1. The enabled reset signal RST(n) can turn on the transistor T2. At this time, when the clock signal CK has the enable voltage level VGL1, the turned-on transistor T2 can output the enabled reset signal RST(n).
在另一方面,在第一重置階段的期間PRT1的期間內,前 級發光信號EM(n-1)具有禁能電壓準位VGH1。被禁能的前級發光信號EM(n-1)可使電晶體T9被關斷。此時,時脈信號CK具有致能電壓準位VGL1。時脈信號CK可使電晶體T6、T8被導通。被導通的電晶體T6將節點ND3上的第二控制信號Q(n)拉至前級發光信號EM(n-1)(即,禁能電壓準位VGH1)並藉以關斷電晶體T7、T11。被導通的電晶體T8則將電晶體T10的控制端上的信號拉至時脈信號CK(即,致能電壓準位VGL1)以導通電晶體T10。被導通的電晶體T10將節點ND4上的第一控制信號P(n)拉至時脈信號CK以導通電晶體T12、T13。被導通的電晶體T12將節點ND3上的第二控制信號Q(n)拉至電壓信號VGH(即,禁能電壓準位VGH1)以使節點ND3上的第二控制信號Q(n)維持在禁能電壓準位VGH1。被導通的電晶體T13將節點ND1上的發光信號EM(n)拉至電壓信號VGH(即,禁能電壓準位VGH1)以使發光信號EM(n)被禁能。 On the other hand, during the period PRT1 of the first reset phase, the previous The level emitting signal EM(n-1) has a disable voltage level VGH1. The disabled pre-stage light-emitting signal EM(n-1) can turn off the transistor T9. At this time, the clock signal CK has the enable voltage level VGL1. The clock signal CK enables the transistors T6 and T8 to be turned on. The turned-on transistor T6 pulls the second control signal Q(n) on the node ND3 to the previous-stage light-emitting signal EM(n-1) (ie, the disable voltage level VGH1), thereby turning off the transistors T7 and T11 . The turned-on transistor T8 pulls the signal on the control terminal of the transistor T10 to the clock signal CK (ie, the enable voltage level VGL1 ) to turn on the transistor T10 . The turned-on transistor T10 pulls the first control signal P(n) on the node ND4 to the clock signal CK to turn on the transistors T12 and T13. The turned-on transistor T12 pulls the second control signal Q(n) on the node ND3 to the voltage signal VGH (ie, the disable voltage level VGH1) to maintain the second control signal Q(n) on the node ND3 at Disable voltage level VGH1. The turned-on transistor T13 pulls the emission signal EM(n) on the node ND1 to the voltage signal VGH (ie, the disable voltage level VGH1) to disable the emission signal EM(n).
關於第n級的移位暫存電路GC_n在第二重置階段的期間PRT2內的操作細節,請同時參照圖3以及圖4D。在第二重置階段的期間PRT2內,發光信號EM(n)具有禁能電壓準位VGH1。被禁能的發光信號EM(n)關斷電晶體T1、T5。後級第一控制信號P(n+1)具有致能電壓準位VPL。被致能的後級第一控制信號P(n+1)導通電晶體T3、T4。被導通的電晶體T3、T4分別將電容器C1兩端上的信號拉至電壓信號VGH(即,禁能電壓準位VGH1)以關斷電晶體T2並使重置信號RST(n)被禁能。 Please refer to FIG. 3 and FIG. 4D for details of the operation of the n-th stage shift register circuit GC_n in the period PRT2 of the second reset phase. During the period PRT2 of the second reset phase, the light-emitting signal EM(n) has a disable voltage level VGH1. The disabled light-emitting signal EM(n) turns off the transistors T1, T5. The post-stage first control signal P(n+1) has an enable voltage level VPL. The enabled first control signal P(n+1) of the subsequent stage turns on the transistors T3 and T4. The turned-on transistors T3, T4 respectively pull the signal on both ends of the capacitor C1 to the voltage signal VGH (ie, the disable voltage level VGH1) to turn off the transistor T2 and disable the reset signal RST(n) .
在另一方面,在第二重置階段的期間PRT2內,前級發光信號EM(n-1)具有禁能電壓準位VGH1。被禁能的前級發光信號EM(n-1)關斷電晶體T9。時脈信號CK具有禁能電壓準位VGH1。此時,時脈信號CK可使電晶體T6、T8被關斷。電晶體T10則維持被關斷。節點ND4上的第一控制信號P(n)維持為前一個期間PRT1的信號(即,具有致能電壓準位VGL1的時脈信號CK),並使電晶體T12、T13維持被導通。被導通的電晶體T12將節點ND3上的第二控制信號Q(n)拉至電壓信號VGH(即,禁能電壓準位VGH1)以使節點ND3上的信號維持在禁能電壓準位VGH1以關斷電晶體T7、T11。被導通的電晶體T13將節點ND1上的發光信號EM(n)拉至電壓信號VGH(即,禁能電壓準位VGH1)以使發光信號EM(n)被禁能。 On the other hand, in the period PRT2 of the second reset phase, the previous-stage light-emitting signal EM(n-1) has a disable voltage level VGH1. The disabled pre-stage light-emitting signal EM(n-1) turns off the transistor T9. The clock signal CK has a disable voltage level VGH1. At this time, the clock signal CK can turn off the transistors T6 and T8. The transistor T10 remains turned off. The first control signal P(n) on the node ND4 maintains the signal of the previous period PRT1 (ie, the clock signal CK with the enabling voltage level VGL1 ), and keeps the transistors T12 and T13 turned on. The turned-on transistor T12 pulls the second control signal Q(n) on the node ND3 to the voltage signal VGH (ie, the disable voltage level VGH1) to maintain the signal on the node ND3 at the disable voltage level VGH1 and above Turn off the transistors T7 and T11. The turned-on transistor T13 pulls the emission signal EM(n) on the node ND1 to the voltage signal VGH (ie, the disable voltage level VGH1) to disable the emission signal EM(n).
在本實施例中,電晶體T1~T13是以P型金氧半場效電晶體(p-type Metal-Oxide-Semiconductor Field-Effect Transistor,PMOSFET)來被實現。在其他實施例中,電晶體T1~T13是以N型金氧半場效電晶體(NMOSFET)來被實現。在其他實施例中信號反向於本實施例中對應的信號。 In this embodiment, the transistors T1 ˜ T13 are implemented by p-type Metal-Oxide-Semiconductor Field-Effect Transistor (PMOSFET). In other embodiments, the transistors T1 - T13 are implemented as N-type metal-oxide-semi-field-effect transistors (NMOSFETs). In other embodiments the signals are reversed to the corresponding signals in this embodiment.
請參考圖5,圖5是依據本發明另一實施例所繪示的顯示面板的方塊圖。在本實施例中,顯示面板500包括畫素陣列PXL以及閘極驅動電路GC。畫素陣列PXL包括子畫素陣列PXL_1、PXL_2。在俯視圖中,閘極驅動電路GC設置於子畫素陣列PXL_1、PXL_2之間。關於閘極驅動電路GC的實施細節,在前述的實施
例中已有詳細的說明,在此恕不多重述。
Please refer to FIG. 5 , which is a block diagram of a display panel according to another embodiment of the present invention. In this embodiment, the
綜上所述,本發明實施例的閘極驅動電路及顯示面板用來產生發光信號的電路以及用來產生重置信號的電路被整合在相同的移位暫存電路中。此外,閘極驅動電路及顯示面板能夠依據發光信號來產生重置信號。如此一來,閘極驅動電路及顯示面板能夠省去額外用來控制重置信號的電路。因此每一級的移位暫存電路具有整合性的電路架構,以增加顯示面板上可配置的電路空間而助於設計零邊框的顯示面板。在部分實施例中,閘極驅動電路是設置於相鄰的子畫素陣列之間。 To sum up, the gate driving circuit and the circuit for generating the light-emitting signal and the circuit for generating the reset signal of the display panel according to the embodiments of the present invention are integrated in the same shift register circuit. In addition, the gate driving circuit and the display panel can generate the reset signal according to the light-emitting signal. In this way, the gate driving circuit and the display panel can save additional circuits for controlling the reset signal. Therefore, the shift register circuit of each stage has an integrated circuit structure, so as to increase the configurable circuit space on the display panel and help to design a zero-frame display panel. In some embodiments, the gate driving circuit is disposed between adjacent sub-pixel arrays.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.
110:發光信號產生電路 110: Lighting signal generation circuit
120:發光信號控制電路 120: Lighting signal control circuit
130:重置信號產生電路 130: Reset signal generation circuit
140:重置信號控制電路 140: reset signal control circuit
EM(n):發光信號 EM(n): luminescence signal
GC_n:移位暫存電路 GC_n: Shift temporary storage circuit
ND1:節點 ND1: Node
RST(n):重置信號 RST(n): reset signal
Claims (15)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110142297A TWI778864B (en) | 2021-11-12 | 2021-11-12 | Gate driving circuit and display panel |
| CN202210624332.1A CN114882828B (en) | 2021-11-12 | 2022-06-02 | Gate driving circuit and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110142297A TWI778864B (en) | 2021-11-12 | 2021-11-12 | Gate driving circuit and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI778864B true TWI778864B (en) | 2022-09-21 |
| TW202320053A TW202320053A (en) | 2023-05-16 |
Family
ID=82680028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110142297A TWI778864B (en) | 2021-11-12 | 2021-11-12 | Gate driving circuit and display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114882828B (en) |
| TW (1) | TWI778864B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180047327A1 (en) * | 2016-01-19 | 2018-02-15 | Boe Technology Group Co., Ltd. | Shift Register, Gate Driving Circuit, and Display Device |
| US20180061508A1 (en) * | 2016-03-22 | 2018-03-01 | Boe Technology Group Co., Ltd. | Shift register unit and method for driving the same, corresponding gate driving circuit and display device |
| TW201931341A (en) * | 2017-12-28 | 2019-08-01 | 友達光電股份有限公司 | Shift register circuit |
| US20190279588A1 (en) * | 2017-05-17 | 2019-09-12 | Boe Technology Group Co., Ltd. | Shift register unit, gate driving circuit, display and gate driving method |
| US20210005124A1 (en) * | 2018-05-25 | 2021-01-07 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Shift register, gate driving circuit, and display apparatus |
| US20210335317A1 (en) * | 2018-05-04 | 2021-10-28 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Shift Register and Driving Method Thereof, Gate Driving Circuit and Display Device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104978924B (en) * | 2014-04-10 | 2017-07-25 | 上海和辉光电有限公司 | Light emission control driver, light emission control and scan driver, and display device |
| KR102257941B1 (en) * | 2014-06-17 | 2021-05-31 | 삼성디스플레이 주식회사 | Organic light emitting display device |
| KR102396195B1 (en) * | 2017-07-13 | 2022-05-10 | 엘지디스플레이 주식회사 | Gate driving circuit and display dedvice using the same |
| CN112424856B (en) * | 2019-06-03 | 2023-03-14 | 京东方科技集团股份有限公司 | Pixel circuit, driving method of pixel circuit, display device and driving method of display device |
| KR102658432B1 (en) * | 2019-11-19 | 2024-04-17 | 엘지디스플레이 주식회사 | Emitting control Signal Generator and Light Emitting Display Device including the same |
| KR102757474B1 (en) * | 2019-12-31 | 2025-01-17 | 엘지디스플레이 주식회사 | Gate driver and OLED display device using the same |
-
2021
- 2021-11-12 TW TW110142297A patent/TWI778864B/en active
-
2022
- 2022-06-02 CN CN202210624332.1A patent/CN114882828B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180047327A1 (en) * | 2016-01-19 | 2018-02-15 | Boe Technology Group Co., Ltd. | Shift Register, Gate Driving Circuit, and Display Device |
| US20180061508A1 (en) * | 2016-03-22 | 2018-03-01 | Boe Technology Group Co., Ltd. | Shift register unit and method for driving the same, corresponding gate driving circuit and display device |
| US20190279588A1 (en) * | 2017-05-17 | 2019-09-12 | Boe Technology Group Co., Ltd. | Shift register unit, gate driving circuit, display and gate driving method |
| TW201931341A (en) * | 2017-12-28 | 2019-08-01 | 友達光電股份有限公司 | Shift register circuit |
| US20210335317A1 (en) * | 2018-05-04 | 2021-10-28 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Shift Register and Driving Method Thereof, Gate Driving Circuit and Display Device |
| US20210005124A1 (en) * | 2018-05-25 | 2021-01-07 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Shift register, gate driving circuit, and display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114882828A (en) | 2022-08-09 |
| TW202320053A (en) | 2023-05-16 |
| CN114882828B (en) | 2025-04-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9113534B2 (en) | Light-emitting control circuit, light-emitting control method and shift register | |
| TWI534781B (en) | Scan drive circuit and organic light shower display | |
| CN103606350B (en) | organic light emitting diode panel | |
| JP6151282B2 (en) | Array substrate row driving unit, array substrate row driving circuit, and display device | |
| CN106782338B (en) | Shift register cell and its driving method, gate driving circuit, display device | |
| US20180122289A1 (en) | Shift register, driving method, gate driving circuit and display device | |
| US20120140872A1 (en) | Shift register with low power consumption | |
| US9991005B2 (en) | Shift register and driving method thereof | |
| US12362026B2 (en) | Shift register and control method therefor, gate drive circuit, and display panel | |
| US20210082368A1 (en) | Shift Register, Driving Method Thereof, Driving Control Circuit and Display Device | |
| US20170069265A1 (en) | Display Drive Device and AMOLED Display Comprising the Drive Device | |
| WO2021057067A1 (en) | Scanning circuit, display panel and display device | |
| US11257418B2 (en) | Driving unit and driving method thereof, gate driving circuit and display substrate | |
| US20160372034A1 (en) | Shift Register and OLED Display Drive Circuit | |
| US20180144702A1 (en) | Shift register circuit | |
| CN111341267A (en) | Pixel circuit and driving method thereof | |
| WO2020228017A1 (en) | Signal generation method, signal generation circuit, and display apparatus | |
| TWI685831B (en) | Pixel circuit and driving method thereof | |
| WO2022213579A1 (en) | Shift register unit and driving method therefor, gate driving circuit, and display device | |
| JP2010238323A (en) | Shift register and electronic device | |
| CN118800160A (en) | Shift register, driving circuit, driving method and display device | |
| TW201913634A (en) | Driving unit and driving array | |
| KR20070037055A (en) | LED display device | |
| CN117636777A (en) | Gate drivers and display devices | |
| TWI778864B (en) | Gate driving circuit and display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |