TWI768111B - Negative photosensitive resin composition, semiconductor device and electronic device - Google Patents

Abstract

A negative photosensitive resin composition of the present invention includes a thermosetting resin, a photopolymerization initiator and a coupling agent containing an acid anhydride group as a functional group. It is preferred that the thermosetting resin contains a multifunctional epoxy resin. Further, it is preferred that an amount of the multifunctional epoxy resin is in the range of 40 to 80 mass% with respect to nonvolatile components of the negative photosensitive resin composition. Furthermore, it is preferred that the coupling agent is a compound having an alkoxysilyl group and containing a succinic acid anhydride as the functional group.

Description

Negative photosensitive resin composition, semiconductor device, and electronic device

The present invention relates to a negative photosensitive resin composition, a semiconductor device, and an electronic apparatus.

In semiconductor elements, resin films made of resin materials are used in applications such as protective films, interlayer insulating films, and planarizing films. In addition, depending on the mounting method of the semiconductor element, these resin films are required to be thickened. However, when the resin film is thickened, the warpage of the semiconductor wafer becomes remarkable.

On the other hand, there is known a technique of forming a pattern on a resin film by imparting photosensitivity and light transmittance to the resin film. Thereby, the intended pattern can be formed accurately.

Then, the development of the resin composition which can manufacture the resin film which has photosensitivity and can be thickened has been carried out.

For example, Patent Document 1 discloses a photosensitive resin composition which is excellent in light transmittance and can suppress warpage of a semiconductor wafer by reducing residual stress by optimizing the molecular structure.

Moreover, the photosensitive resin composition is also used for the purpose of forming an insulating portion for burying wiring in a resin film formed of the photosensitive resin composition to insulate the wiring.

Patent Document 1: Japanese Patent Laid-Open No. 2003-209104

On the other hand, in a resin film used for mounting a semiconductor element, it is required to Chip or wiring adhesion. Therefore, in such a resin film, the adhesiveness to an inorganic material and a metal material is emphasized.

However, the conventional resin film has a problem that the reliability after mounting cannot be sufficiently improved due to the low adhesion to inorganic materials and metal materials.

An object of the present invention is to provide a photosensitive resin composition capable of forming a resin film having good adhesion to inorganic materials and metal materials, a semiconductor device including the resin film, and an electronic device including the semiconductor device.

Such objects are achieved by the present invention of the following (1) to (11).

(1) A negative photosensitive resin composition comprising: a thermosetting resin; a photopolymerization initiator; and a coupling agent containing an acid anhydride as a functional group.

(2) The negative photosensitive resin composition according to (1) above, wherein the thermosetting resin contains a component that is solid at room temperature.

(3) The negative photosensitive resin composition according to the above (1) or (2), wherein the thermosetting resin contains a polyfunctional epoxy resin.

(4) The negative photosensitive resin composition according to the above (3), wherein the content of the polyfunctional epoxy resin is 40 to 80% by mass relative to the nonvolatile content of the photosensitive resin composition.

(5) The negative photosensitive resin composition according to any one of (1) to (4) above, wherein the coupling agent is a compound containing an alkoxysilyl group.

(6) The negative photosensitive resin composition according to any one of (1) to (5) above, wherein the acid anhydride is succinic anhydride.

(7) The negative photosensitive resin composition according to any one of the above (1) to (6), wherein the negative photosensitive resin composition further contains a solvent.

(8) The negative photosensitive resin composition according to the above (7), wherein the negative photosensitive resin composition is dissolved in the solvent to form a varnish.

(9) A semiconductor device comprising: a semiconductor wafer; and a resin film provided on the semiconductor wafer and comprising a cured product of the negative-type photosensitive resin composition of any one of (1) to (8).

(10) The semiconductor device according to the above (9), wherein a rewiring layer is embedded in the resin film, and the rewiring layer is electrically connected to the semiconductor chip.

(11) An electronic device including the semiconductor device of (9) or (10) above.

According to this invention, the negative photosensitive resin composition which can form the resin film with favorable adhesiveness to an inorganic material and a metal material can be obtained.

Moreover, according to this invention, the semiconductor device provided with the said resin film can be obtained.

Moreover, according to this invention, the electronic apparatus provided with the said semiconductor device can be obtained.

1: Semiconductor device

2: Through electrode substrate

3: Semiconductor packaging

21, 251, 252: organic insulating layer

22, 221, 222, 254: through wiring

23, 32: Semiconductor wafers

24: Lower wiring layer

25: Upper wiring layer

26, 35: Solder bumps

27: Wafer embedded structure

31: Package substrate

33: Soldering Wire

34: Sealing layer

41, 412: Mask

42, 423, 424: Opening

202: Substrate

210, 2510, 2520: photosensitive resin layer

253: wiring layer

FIG. 1 is a longitudinal sectional view showing a first embodiment of the semiconductor device of the present invention.

FIG. 2 is a partial enlarged view of the area surrounded by the chain lines of FIG. 1 .

FIG. 3 is a diagram showing an example of a method of manufacturing the semiconductor device shown in FIG. 1 .

FIG. 4 is a diagram showing an example of a method of manufacturing the semiconductor device shown in FIG. 1 .

5 is a longitudinal sectional view showing a second embodiment of the semiconductor device of the present invention.

FIG. 6 is a partial enlarged view of the area surrounded by the chain lines of FIG. 5 .

FIG. 7 is a step diagram showing a method of manufacturing the semiconductor device shown in FIG. 5 .

FIG. 8 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG. 5 .

FIG. 9 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG. 5 .

FIG. 10 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG. 5 .

Hereinafter, the negative photosensitive resin composition, semiconductor device, and electronic apparatus of the present invention will be described in detail based on preferred embodiments shown in the drawings.

First, before the description of the negative photosensitive resin composition and the photosensitive resin film including the negative photosensitive resin composition, the first embodiment of the semiconductor device of the present invention to which these are applied will be described.

<<First Embodiment>>

1. Semiconductor device

FIG. 1 is a longitudinal sectional view showing a first embodiment of the semiconductor device of the present invention. In addition, FIG. 2 is a partial enlarged view of the area|region enclosed by the chain line of FIG. 1. FIG. In addition, in the following description, the upper side in FIG. 1 is called "upper", and the lower side is called "lower".

The semiconductor device 1 shown in FIG. 1 has a so-called PACKAGE-ON-PACKAGE structure including a through-electrode substrate 2 and a semiconductor package 3 mounted thereon.

Among them, the through electrode substrate 2 includes: an organic insulating layer 21 (resin film); a plurality of through wirings 22 penetrating from the upper surface to the lower surface of the organic insulating layer 21 ; and a semiconductor wafer 23 embedded in the organic insulating layer 21 ; lower wiring layer 24, which is arranged on the lower surface of the organic insulating layer 21; upper wiring layer 25, which is arranged on the upper surface of the organic insulating layer 21; solder bumps 26, which are arranged on the lower surface of the lower wiring layer 24. In the semiconductor device 1 of the present embodiment, the organic insulating layer 21 is provided at least on the surface of the semiconductor wafer 23, and includes a cured product of a photosensitive resin composition or a photosensitive resin film described later.

On the other hand, the semiconductor package 3 includes: a package substrate 31; and a semiconductor wafer 32, which Mounted on the packaging substrate 31 ; the bonding wire 33 , which electrically connects the semiconductor chip 32 and the packaging substrate 31 ; the sealing layer 34 , which is embedded with the semiconductor chip 32 or the bonding wire 33 ; the solder bumps 35 , which are arranged on the packaging substrate 31 the lower surface.

In addition, the semiconductor package 3 is laminated on the through-electrode substrate 2 . Thereby, the solder bumps 35 of the semiconductor package 3 are electrically connected to the upper wiring layer 25 of the through-electrode substrate 2 .

In the semiconductor device 1 of this type, since the organic insulating layer 21 has good adhesion to the through wiring 22 or the semiconductor wafer 23 , reliability is improved.

In addition, since it is not necessary to use a thick substrate such as an organic substrate including a core layer for the through-electrode substrate 2, a low profile can be easily achieved. Therefore, it is also possible to contribute to the miniaturization of electronic equipment incorporating the semiconductor device 1 .

In addition, since the through-electrode substrate 2 and the semiconductor package 3 provided with mutually different semiconductor chips are laminated, the mounting density per unit area can be increased. Also from this viewpoint, miniaturization of the semiconductor device 1 can be achieved.

Hereinafter, the through-electrode substrate 2 and the semiconductor package 3 will be described in further detail.

The lower wiring layer 24 and the upper wiring layer 25 included in the through electrode substrate 2 shown in FIG. 2 include an insulating layer, a wiring layer, a through wiring, and the like, respectively. Thereby, the lower-layer wiring layer 24 and the upper-layer wiring layer 25 can be electrically connected so as to include wirings inside or on the surface and to penetrate in the thickness direction via the through-wires.

The wiring layer included in the lower wiring layer 24 is connected to the semiconductor chip 23 or the solder bumps 26 . Therefore, the lower wiring layer 24 functions as a rewiring layer of the semiconductor wafer 23 , and the solder bumps 26 function as external terminals of the semiconductor wafer 23 .

In addition, the through wiring 22 shown in FIG. 2 is provided so as to penetrate the organic insulating layer 21 . Thereby, the lower wiring layer 24 and the upper wiring layer 25 can be electrically connected. As a result, the through-electrode substrate 2 and the semiconductor package 3 can be laminated, and the high functionality of the semiconductor device 1 can be achieved.

Furthermore, the wiring layer included in the upper wiring layer 25 shown in FIG. 2 and the through wiring 22 or Solder bumps 35 are connected. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor wafer 23 and functions as a rewiring layer of the semiconductor wafer 23 and also functions as an interposer between the semiconductor wafer 23 and the package substrate 31 . As a result, the density of the rewiring layer can be increased.

In addition, the effect of reinforcing the organic insulating layer 21 can be obtained by penetrating the organic insulating layer 21 through the through wiring 22 . Therefore, even when the mechanical strength of the lower wiring layer 24 or the upper wiring layer 25 is low, it is possible to avoid a reduction in the mechanical strength of the entire through-electrode substrate 2 . As a result, the lower wiring layer 24 or the upper wiring layer 25 can be further thinned, and the semiconductor device 1 can be further reduced in profile.

Furthermore, the organic insulating layer 21 is provided so as to cover the semiconductor wafer 23 . Thereby, the effect of protecting the semiconductor wafer 23 can be enhanced. As a result, the reliability of the semiconductor device 1 can be improved. In addition, a semiconductor device 1 that can be easily applied to a mounting method such as the package-on-package structure of the present embodiment can be obtained.

The diameter W (see FIG. 2 ) of the through wiring 22 is not particularly limited, but is preferably about 1 to 100 μm, more preferably about 2 to 80 μm. Thereby, the electrical conductivity of the through wiring 22 can be ensured without impairing the mechanical properties of the organic insulating layer 21 .

The semiconductor package 3 shown in FIG. 2 may be any form of package. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN ( Quad Flat No-leaded Package; Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), LF-BGA (Lead Frame Ball Grid Array; Lead Flame BGA) and other forms.

The form of the semiconductor wafer 32 is not particularly limited. As an example, the semiconductor wafer 32 shown in FIG. 1 is configured by stacking a plurality of wafers. Therefore, high density is achieved. In addition, a plurality of wafers may be juxtaposed in the plane direction, or may be stacked in the thickness direction and juxtaposed in the plane direction.

The package substrate 31 may be any substrate, and may be, for example, a substrate including an insulating layer, a wiring layer, and through-wiring, which are not shown, and the like. Among them, the solder bumps 35 and the bonding wires 33 can be electrically connected through the through wirings.

The sealing layer 34 is formed of, for example, a known sealing resin material. By providing such a sealing layer 34, the semiconductor wafer 32 or the bonding wire 33 can be protected from external force or external environment.

In addition, since the semiconductor chip 23 included in the through-electrode substrate 2 and the semiconductor chip 32 included in the semiconductor package 3 are arranged close to each other, advantages such as high speed and low loss of mutual communication can be shared. From this viewpoint, for example, if one of the semiconductor wafer 23 and the semiconductor wafer 32 is a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an AP (Application Processing Unit) Processor; Application Processor) and other computing elements, and the other is set to DRAM (Dynamic Random Access Memory) or memory elements such as flash memory, etc., these elements can be in the same device. Since they are arranged in close proximity, it is possible to realize the semiconductor device 1 that achieves both high functionality and miniaturization.

<Organic insulating layer>

Next, the organic insulating layer 21 will be specifically described in detail.

The organic insulating layer 21 of the present embodiment includes a photosensitive resin composition or a cured product of a photosensitive resin film to be described later.

The glass transition temperature (Tg) of the cured product of the photosensitive resin composition of the present embodiment (including the cured product of the photosensitive resin film. The same applies hereinafter) is preferably 140°C or higher, more preferably 150°C or higher, More preferably, it is 160 degreeC. Thereby, the heat resistance of the organic insulating layer 21 can be improved, so that the semiconductor device 1 that can be used even in a high temperature environment, for example, can be realized. Moreover, the upper limit of the hardened|cured material of the photosensitive resin composition is not specifically limited, It can be made into 250 degrees C or less as an example.

In addition, the glass transition temperature of the cured product of the photosensitive resin composition is based on a thermomechanical analyzer under the conditions of an onset temperature of 30°C, a measurement temperature range of 30 to 400°C, and a temperature increase rate of 5°C/min. Set (TMA) to calculate the result of measuring the specific test piece (width 4mm x length 20mm x thickness 0.005~0.015mm).

Regarding the cured product of the photosensitive resin composition of the present embodiment, the coefficient of linear expansion (CTE) is preferably 5 to 80 ppm/°C, more preferably 10 to 70 ppm/°C, still more preferably 15 to 60 ppm/°C. Thereby, the linear expansion coefficient of the organic insulating layer 21 can be close to, for example, the linear expansion coefficient of the silicon material. Therefore, it is possible to obtain the organic insulating layer 21 that does not easily cause warpage of the semiconductor wafer 23 or the like, for example. As a result, the semiconductor device 1 with high reliability can be obtained.

In addition, the linear expansion coefficient of the cured product of the photosensitive resin composition is based on a specific test using a thermomechanical analyzer (TMA) under the conditions of an initial temperature of 30°C, a measurement temperature range of 30 to 400°C, and a temperature increase rate of 5°C/min. The sheet (width 4mm x length 20mm x thickness 0.005~0.015mm) was measured and calculated.

The 5% thermal weight reduction temperature Td5 of the cured product of the photosensitive resin composition of the present embodiment is preferably 300°C or higher, more preferably 320°C or higher. Thereby, it is possible to obtain a cured product which is not prone to weight loss due to thermal decomposition or the like at high temperatures and is excellent in heat resistance. Therefore, the organic insulating layer 21 excellent in durability in a high temperature environment can be obtained.

In addition, the 5% thermogravimetric reduction temperature Td5 of the cured product of the photosensitive resin composition was calculated based on the result of measuring 5 mg of the cured product with a differential thermogravimetric simultaneous measuring apparatus (TG/DTA).

Regarding the cured product of the photosensitive resin composition of the present embodiment, the elongation is preferably 5 to 50%, more preferably 6 to 45%, and further preferably 7 to 40%. As a result, the elongation of the organic insulating layer 21 is optimized, so even when the through wiring 22 is provided so as to penetrate the organic insulating layer 21, for example, the interface between the organic insulating layer 21 and the through wiring 22 can be suppressed from peeling off. Wait. In addition, the occurrence of cracks and the like in the organic insulating layer 21 itself can also be suppressed.

In addition, if the elongation is less than the aforementioned lower limit value, the thickness or shape of the organic insulating layer 21 depends on the shape, etc., there is a possibility that cracks or the like may be generated in the organic insulating layer 21 . On the other hand, if the elongation is larger than the above-mentioned upper limit value, the mechanical properties of the organic insulating layer 21 may be lowered depending on the thickness, shape, and the like of the organic insulating layer 21 .

In addition, the elongation of the hardened|cured material of the photosensitive resin composition was measured as follows. First, a tensile test (tensile speed: 5 mm/min) was performed on a specific test piece (width 6.5 mm×length 20 mm×thickness 0.005 to 0.015 mm) in an environment with a temperature of 25° C. and a humidity of 55%. The tensile test was performed using a tensile testing machine (TENSILON RTA-100) manufactured by ORIENTEC CORPORATION. Next, the tensile elongation was calculated from the result of the tensile test. Here, the above-mentioned tensile test was performed with the number of tests n=10, and the average value of 5 times with the largest measured value was obtained, and this was set as the measured value.

The tensile strength of the cured product of the photosensitive resin composition of the present embodiment is preferably 20 MPa or more, more preferably 30 to 300 MPa. Thereby, the organic insulating layer 21 having sufficient mechanical strength and excellent durability can be obtained.

In addition, the tensile strength of the cured product of the photosensitive resin composition was calculated|required from the result of the tensile test obtained by the same method as the measurement of the said elongation.

The tensile modulus of elasticity of the cured product of the photosensitive resin composition of the present embodiment is preferably 0.5 GPa or more, and more preferably 1 to 5 GPa. Thereby, the organic insulating layer 21 having sufficient mechanical strength and excellent durability can be obtained.

Moreover, the elastic modulus of the hardened|cured material of the photosensitive resin composition was calculated|required from the result of the tensile test obtained by the same method as the measurement of the said elongation.

In addition, as the above-mentioned cured product, for example, one cured under the following conditions is used. First, after applying the photosensitive resin composition on a silicon wafer substrate by a spin coater or the like, it is dried on a hot plate at 120° C. for 5 minutes to obtain a coating film. The obtained coating film was exposed to the entire surface at 700 mJ/cm ² , and PEB (Post Exposure Bake) was performed at 70° C. for 5 minutes. Then, it heated at 200 degreeC for 90 minutes, and obtained the cured film.

2. Manufacturing method of semiconductor device

The above-described semiconductor device 1 of the present embodiment can be manufactured, for example, as follows.

3 and 4 are diagrams each showing an example of a method of manufacturing the semiconductor device 1 shown in FIG. 1 .

[1]

First, as shown in FIG. 3( a ), the substrate 202 is prepared.

The constituent material of the substrate 202 is not particularly limited, and examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, organic materials, and the like. In addition, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like can be used for the substrate 202 . In addition, electronic circuits may be formed in the substrate 202 as desired.

[2]

Next, as shown in FIG. 3( b ), the semiconductor wafer 23 is arranged on the substrate 202 . In the present manufacturing method, as an example, the plurality of semiconductor wafers 23 are arranged separately from each other. The plurality of semiconductor chips 23 may be of the same type, or may be of different types.

In addition, if necessary, an interposer (not shown) may be provided between the substrate 202 and the semiconductor wafer 23 . The interposer functions as, for example, a rewiring layer of the semiconductor wafer 23 . Therefore, the interposer may be provided with pads (not shown) for electrically connecting electrodes of the semiconductor wafer 23 to be described later. Thereby, the space between the pads and the arrangement pattern of the semiconductor wafer 23 can be changed, and the degree of freedom in designing the semiconductor device 1 can be further improved.

As such an interposer, inorganic substrates such as silicon substrates, ceramic substrates, and glass substrates, and organic substrates such as resin substrates can be used, for example.

[3]

Next, as shown in FIG.3(c), the photosensitive resin layer 210 is arrange|positioned on the board|substrate 202 so that the semiconductor wafer 23 may be embedded. As the photosensitive resin layer 210, a photosensitive resin composition or a photosensitive resin film which will be described later can be used.

At this time, by using the photosensitive resin film containing the photosensitive resin composition in particular, it becomes easy to realize thickening of the photosensitive resin layer 210 . Thereby, even if the thinning of the semiconductor wafer 23 is not achieved, it can be embedded easily.

When forming the photosensitive resin layer 210 using the photosensitive resin film, the photosensitive resin film alone may be attached from above the semiconductor wafer 23, or the photosensitive resin film laminated on the carrier film may be attached to the semiconductor wafer 23, The photosensitive resin film is left by peeling off the carrier film.

In addition, in the work of attaching the photosensitive resin film, a well-known lamination method can be used. At this time, for example, a vacuum laminator can be used. The vacuum laminator can be batch type or continuous type.

Moreover, in the process of attaching the photosensitive resin film, the photosensitive resin film can be heated as needed.

The heating temperature can be appropriately set according to the constituent material of the photosensitive resin film and the heating time, and is preferably about 40 to 150°C, more preferably about 50 to 140°C, and further preferably about 60 to 130°C. By heating at such a temperature, the embedding property of the semiconductor wafer 23 in the photosensitive resin film can be further improved. Thereby, generation|occurrence|production of defects, such as a void, can be suppressed, and the photosensitive resin layer 210 which is further flattened can be formed efficiently.

Moreover, since the fusion|melting of a photosensitive resin film becomes insufficient when a heating temperature is less than the said lower limit, there exists a possibility that embeddability may fall depending on the constituent material of a photosensitive resin film, etc. On the other hand, when the heating temperature exceeds the above-mentioned upper limit value, there is a possibility of curing depending on the constituent material of the photosensitive resin film and the like.

In addition, the heating time is appropriately set depending on the constituent material of the photosensitive resin film, the heating temperature, and the like, but is preferably about 5 to 180 seconds, more preferably about 10 to 60 seconds.

In addition, the semiconductor wafer 23 can be embedded in the photosensitive resin film by applying pressure while heating. The pressing force at this time is appropriately set depending on the constituent material of the photosensitive resin film, etc., and is preferably about 0.2 to 5 MPa, more preferably about 0.4 to 1 MPa.

On the other hand, by using a varnish-like photosensitive resin composition, it becomes easy to realize Flattening of the photosensitive resin layer 210 .

In the operation of forming the photosensitive resin layer 210 using the varnish-like photosensitive resin composition, the viscosity is adjusted with a solvent or the like as necessary, and the coating is applied on the substrate 202 by various coating apparatuses. After that, the photosensitive resin layer 210 is obtained by drying the obtained coating film. In addition, in order to completely embed the semiconductor wafer and secure a sufficient thickness, the application and drying of the varnish-like photosensitive resin composition may be repeated several times.

As a coating apparatus, a spin coater, a spraying apparatus, an inkjet apparatus etc. are mentioned, for example.

The film thickness of the photosensitive resin film (the film thickness of the photosensitive resin layer 210 ) is appropriately set according to the film thickness after curing (height H in FIG. 2 ) and in consideration of the curing shrinkage, but it is only necessary to be able to embed the semiconductor wafer 23 . The thickness is not particularly limited. Among them, as an example of the film thickness of the photosensitive resin film, it is preferably about 20 to 1000 μm, more preferably about 50 to 750 μm, and still more preferably about 100 to 500 μm. By setting the film thickness of the photosensitive resin layer 210 within the aforementioned range, the semiconductor wafer 23 can be easily embedded, and sufficient mechanical strength can be imparted to the cured film of the photosensitive resin layer 210 . As a result, it is possible to form a cured film (organic insulating layer 21 ) that contributes to good protection of the semiconductor wafer 23 and also contributes to the rigidity of the semiconductor device 1 .

[4]

Next, as shown in FIG.3(d), the mask 41 is arrange|positioned in the specific area|region on the photosensitive resin layer 210. Further, light (active radiation) is irradiated through the mask 41 . Thereby, exposure processing is performed on the photosensitive resin layer 210 according to the pattern of the mask 41 .

After that, if necessary, post-exposure heat treatment is performed. The conditions of the post-exposure heat treatment are not particularly limited, but are, for example, a heating temperature of about 50 to 150° C. and a heating time of about 1 to 10 minutes.

In FIG.3(d), the case where the photosensitive resin layer 210 has so-called negative-type photosensitivity is shown. In this example, the photosensitive resin layer 210 is given to a region corresponding to the non-light-shielding portion of the mask 41 . Solubility relative to developer.

After that, by performing development processing, openings 42 corresponding to the non-light-shielding parts of the mask 41 are formed, and the openings 42 penetrate the photosensitive resin layer 210 (see FIG. 3( e )).

As a developer, an organic type developer, a water-soluble developer, etc. are mentioned, for example.

After the development process, the photosensitive resin layer 210 is subjected to post-development heat treatment. The conditions of the post-development heat treatment are not particularly limited, but are set to a heating temperature of about 160 to 250° C. and a heating time of about 30 to 180 minutes. Thereby, while suppressing the thermal influence on the semiconductor wafer 23, the photosensitive resin layer 210 is hardened, and the organic insulating layer 21 can be obtained.

[5]

Next, as shown in FIG. 4( f ), the through wiring 22 is formed in the opening portion 42 (see FIG. 3( e )).

A well-known method is used for formation of the through wiring 22, for example, the following method is used.

First, a seed layer (not shown) is formed on the organic insulating layer 21 . The seed layer is formed inside the opening portion 42 (sidewalls and bottom surfaces) and on the upper surface of the organic insulating layer 21 .

As the seed layer, for example, a copper seed layer is used. In addition, the seed layer is formed by, for example, sputtering.

In addition, the seed layer may be formed of the same type of metal as the through wiring 22 to be formed, or may be formed of a different type of metal.

Next, in the seed layer (not shown), a resist layer (not shown) is formed on regions other than the openings 42 . Furthermore, the resist layer is used as a mask, and the opening portion 42 is filled with metal. For this filling, an electrolytic plating method can be used, for example. Examples of metals to be filled include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like. In this way, the conductive material is embedded in the opening portion 42 to form the through wiring 22 .

Next, the resist layer not shown is removed.

In addition, the formation part of the through wiring 22 is not limited to the position shown in figure. For example, you can also set At the position where the photosensitive resin layer 210 covering the semiconductor wafer 23 is penetrated.

[6]

Next, as shown in FIG. 4( g ), the upper wiring layer 25 is formed on the upper surface side of the organic insulating layer 21 . The upper wiring layer 25 is formed using, for example, a photolithography method and a plating method.

[7]

Next, as shown in FIG.4(h), the board|substrate 202 is peeled off. Thereby, the lower surface of the organic insulating layer 21 is exposed.

[8]

Next, as shown in FIG. 4( i ), the lower wiring layer 24 is formed on the lower surface side of the organic insulating layer 21 . The lower wiring layer 24 is formed using, for example, a photolithography method and a plating method. The lower wiring layer 24 is thus formed to be electrically connected to the upper wiring layer 25 via the through wirings 22 .

[9]

Next, as shown in FIG. 4( j ), solder bumps 26 are formed on the lower wiring layer 24 . In addition, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 or the lower wiring layer 24 as required.

As described above, the through-electrode substrate 2 is obtained.

In addition, the through-electrode substrate 2 shown in FIG. 4(j) can be divided into a plurality of regions. Therefore, for example, the through-electrode substrates 2 are singulated along a dotted line shown in FIG. 4( j ), whereby a plurality of through-electrode substrates 2 can be manufactured efficiently. In addition, for the singulation, a diamond cutter or the like can be used, for example.

[10]

Next, the semiconductor package 3 is arranged on the singulated through-electrode substrate 2 . Thereby, the semiconductor device 1 shown in FIG. 1 is obtained.

The manufacturing method of the semiconductor device 1 can be applied to a wafer-level process or a panel-level process using a large-area substrate.

In addition, by using the photosensitive resin layer 210 including the photosensitive resin composition, the arrangement of the semiconductor chips 23 and the embedding of the semiconductor chips 23 can be performed by a wafer-level process or a panel-level process. The formation of the in and through wirings 22 , the formation of the upper wiring layer 25 , and the formation of the lower wiring layer 24 are performed. Thereby, the manufacturing efficiency of the semiconductor device 1 can be improved, and cost reduction can be achieved.

<<Second Embodiment>>

Next, a second embodiment of the semiconductor device of the present invention will be described.

5 is a longitudinal sectional view showing a second embodiment of the semiconductor device of the present invention. In addition, FIG. 6 is a partial enlarged view of the area|region enclosed by the chain line of FIG. 5. FIG. In addition, in the following description, the upper side in FIG. 5 is called "upper", and the lower side is called "lower".

Hereinafter, the second embodiment of the semiconductor device will be described focusing on the differences from the first embodiment described above, and the description of the same matters will be omitted.

1. Semiconductor device

The semiconductor device 1 of the second embodiment differs from the semiconductor device of the first embodiment described above in that the configuration of the through wiring formed in the organic insulating layer 21 and the upper wiring layer 25 are formed using a photosensitive resin composition to be described later. Except for the difference in the device, it is the same as the semiconductor device 1 of the first embodiment described above.

In the semiconductor device 1 of the present embodiment, as shown in FIG. 5 and FIG. 6 , through wirings 221 are provided in the organic insulating layer 21 so as to penetrate the organic insulating layer 21 . Thereby, the lower wiring layer 24 and the upper wiring layer 25 are electrically connected, and the through-electrode substrate 2 and the semiconductor package 3 can be laminated, so that the high functionality of the semiconductor device 1 can be achieved. The diameter W (see FIG. 6 ) of the through wiring 221 is not particularly limited, and can be the same size as the diameter W of the through wiring 22 of the semiconductor device 1 of the first embodiment described above.

The semiconductor device 1 of the present embodiment includes, in addition to the through wiring 221 , the through wiring 222 provided so as to penetrate through the organic insulating layer 21 on the upper surface of the semiconductor wafer 23 . Thereby, electrical connection between the upper surface of the semiconductor wafer 23 and the upper wiring layer 25 can be achieved.

Furthermore, the wiring layer 253 and the through wiring included in the upper wiring layer 25 shown in FIG. 6 221 or solder bump 35 connection. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor wafer 23 and functions as a rewiring layer of the semiconductor wafer 23 and also functions as an interposer between the semiconductor wafer 23 and the package substrate 31 .

Moreover, the upper wiring layer 25 is formed using the photosensitive resin composition mentioned later, and the wiring layer 253 is embedded in the resin film which has the photosensitive resin composition. In the semiconductor device 1 of this type, since the adhesion of the upper wiring layer 25 to the wiring layer 253 is good, reliability is improved.

2. Manufacturing method of semiconductor device

Next, a method of manufacturing the semiconductor device 1 shown in FIG. 5 will be described.

FIG. 7 is a step diagram showing a method of manufacturing the semiconductor device 1 shown in FIG. 5 . 8 to 10 are views for explaining a method of manufacturing the semiconductor device 1 shown in FIG. 5, respectively.

The manufacturing method of the semiconductor device 1 of the present embodiment includes the following steps: a wafer arrangement step S1, in which the organic insulating layer 21 is obtained by embedding the semiconductor wafer 23 and the through wirings 221 and 222 provided on the substrate 202; the upper wiring layer is formed Step S2, the upper wiring layer 25 is formed on the organic insulating layer 21 and the semiconductor wafer 23; the substrate peeling step S3 is peeling off the substrate 202; the lower wiring layer forming step S4, the lower wiring layer 24 is formed; the solder bump forming step S5, the forming Solder bumps 26 and through-electrode substrate 2 are obtained; in the lamination step S6 , the semiconductor package 3 is laminated on the through-electrode substrate 2 .

The upper wiring layer forming step S2 includes the following steps: the first resin film disposing step S20, disposing the photosensitive resin varnish 5 on the organic insulating layer 21 and the semiconductor wafer 23 to obtain the photosensitive resin layer 2510; the first exposure step S21, performing exposure treatment on the photosensitive resin layer 2510; in the first development step S22, performing development treatment on the photosensitive resin layer 2510; in the first curing step S23, performing curing treatment on the photosensitive resin layer 2510; in the wiring layer forming step S24, The wiring layer 253 is formed; in the second resin film arrangement step S25, the photosensitive resin varnish 5 is arranged on the photosensitive resin layer 2510 and the wiring layer 253 to obtain the photosensitive resin layer 2520; the second exposure step S26 is for the photosensitive resin layer 2520 Exposure treatment is carried out; in the second development step S27, development treatment is carried out on the photosensitive resin layer 2520; in the second curing step S28, the photosensitive resin layer is subjected to development treatment; S2520, a hardening process is performed; in step S29 of through-wiring formation, the through-wiring 254 is formed in the opening portion 424 (through-hole).

Hereinafter, each step will be described in order. In addition, the following manufacturing method is an example, and it is not limited to this.

[1] Wafer arrangement step S1

First, as shown in FIG. 8( a ), a chip-embedding structure including a substrate 202 , a semiconductor chip 23 provided on the substrate 202 , through wirings 221 and 222 , and an organic insulating layer 21 provided to embed them is prepared. Body 27.

The constituent material of the substrate 202 is not particularly limited, and examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, organic materials, and the like. In addition, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like can be used for the substrate 202 .

The semiconductor wafer 23 is then attached to the substrate 202 . In the present manufacturing method, as an example, a plurality of semiconductor wafers 23 are separated from each other and provided in parallel on the same substrate 202 . The plurality of semiconductor chips 23 may be of the same type, or may be of different types. In addition, the space between the substrate 202 and the semiconductor wafer 23 may be fixed via an adhesive layer (not shown) such as a wafer adhesive film.

In addition, as needed, an interposer (not shown) may be provided between the substrate 202 and the semiconductor wafer 23 . The interposer functions as, for example, a rewiring layer of the semiconductor wafer 23 . Therefore, the interposer may be provided with pads (not shown) for electrically connecting electrodes of the semiconductor wafer 23 to be described later. Thereby, the space between the pads and the arrangement pattern of the semiconductor wafer 23 can be changed, and the degree of freedom in designing the semiconductor device 1 can be further improved.

As such an interposer, inorganic substrates such as silicon substrates, ceramic substrates, and glass substrates, organic substrates such as resin substrates, and the like are used, for example.

The organic insulating layer 21 is, for example, a resin film containing a thermosetting resin or a thermoplastic resin as a component of the photosensitive resin composition to be described later.

Examples of the constituent material of the through wirings 221 and 222 include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like.

In addition, a wafer-embedded structure 27 produced by a method different from that described above may be prepared.

[2] Upper wiring layer forming step S2

Next, the upper wiring layer 25 is formed on the organic insulating layer 21 and the semiconductor wafer 23 .

[2-1] First resin film arrangement step S20

First, as shown in FIG. 8( b ), the photosensitive resin varnish 5 is applied (disposed) on the organic insulating layer 21 and the semiconductor wafer 23 . Thereby, as shown in FIG.8(c), the liquid coating film of the photosensitive resin varnish 5 can be obtained. The photosensitive resin varnish 5 is the varnish of the photosensitive resin composition mentioned later.

The coating of the photosensitive resin varnish 5 is performed using, for example, a spin coater, a bar coater, a spraying apparatus, an inkjet apparatus, or the like.

The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is preferably 10 to 700 mPa. s, more preferably 30~400mPa. s. When the viscosity of the photosensitive resin varnish 5 is within the aforementioned range, a thinner photosensitive resin layer 2510 can be formed (see FIG. 8( d )). As a result, the upper wiring layer 25 can be made thinner, and the thickness reduction of the semiconductor device 1 can be facilitated.

Moreover, the viscosity of the photosensitive resin varnish 5 shall be the value measured using the cone-plate viscometer (TV-25, the product made by Toki Sangyo Co., Ltd.) under the conditions of, for example, a rotation speed of 50 rpm and a measurement time of 300 seconds.

Next, the liquid coating film of the photosensitive resin varnish 5 is dried. Thereby, the photosensitive resin layer 2510 shown in FIG.8(d) is obtained.

The drying conditions of the photosensitive resin varnish 5 are not specifically limited, For example, the conditions of heating for 1 to 60 minutes at the temperature of 80-150 degreeC are mentioned.

In addition, in this step, instead of the procedure of coating the photosensitive resin varnish 5, The following procedure was used: The photosensitive resin film which film-formed the photosensitive resin varnish 5 was arrange|positioned.

For example, after coating the photosensitive resin varnish 5 on a substrate such as a carrier film by various coating apparatuses, the obtained coating film is dried, thereby producing a photosensitive resin film.

After that, if necessary, pre-exposure heat treatment is performed on the photosensitive resin layer 2510 . By performing the pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 2510 are stabilized and the reaction in the first exposure step S21 to be described later can be stabilized. On the other hand, by heating under the heating conditions described later , the adverse effects on the photoacid generator due to heating can be minimized.

The temperature of the pre-exposure heat treatment is preferably 70 to 130°C, more preferably 75 to 120°C, and still more preferably 80 to 110°C. If the temperature of the pre-exposure heat treatment is less than the aforementioned lower limit value, the purpose of stabilizing the molecules by the pre-exposure heat treatment may not be achieved. On the other hand, if the temperature of the pre-exposure heat treatment is higher than the above-mentioned upper limit value, there is a possibility that the processing accuracy of patterning may be lowered due to the widening of the influence that the activity of the photoacid generator becomes too active even if It also becomes difficult to generate an acid by irradiating light in the 1st exposure process S21 mentioned later.

In addition, the time of the pre-exposure heat treatment is appropriately set according to the temperature of the pre-exposure heat treatment, and at the aforementioned temperature, it is preferably 1 to 10 minutes, more preferably 2 to 8 minutes, and still more preferably 3 to 3 minutes. 6 minutes. If the time of the pre-exposure heat treatment is less than the aforementioned lower limit value, the heating time may be insufficient and the purpose of stabilizing the molecules by the pre-exposure heat treatment may not be achieved. On the other hand, if the time of the pre-exposure heat treatment is longer than the above upper limit value, the heating time is too long, and even if the temperature of the pre-exposure heat treatment is controlled within the above range, the action of the photoacid generator may be inhibited. .

In addition, the environment of the heat treatment is not particularly limited, and may be an inert gas environment, a reducing gas environment, or the like, but it is set to an atmospheric environment in consideration of work efficiency and the like.

In addition, the ambient pressure is not particularly limited, and may be under reduced pressure or under increased pressure, and is set to normal pressure in consideration of work efficiency and the like. In addition, normal pressure means a pressure of about 30-150 kPa, Preferably it is atmospheric pressure.

[2-2] The first exposure step S21

Next, exposure processing is performed on the photosensitive resin layer 2510 .

First, as shown in FIG.8(d), the mask 412 is arrange|positioned in the specific area|region on the photosensitive resin layer 2510. Further, light (active radiation) is irradiated through the mask 412 . In this way, the photosensitive resin layer 2510 is exposed to light according to the pattern of the mask 412 .

In addition, in FIG.8(d), the case where the photosensitive resin layer 2510 has so-called negative-type photosensitivity is shown in figure. In this example, the photosensitive resin layer 2510 is provided with solubility with respect to the developing solution to the region corresponding to the light shielding portion of the mask 412 .

On the other hand, in a region corresponding to the penetration portion of the mask 412, a catalyst such as an acid is generated by the action of the photosensitive agent. The generated acid acts as a catalyst for the reaction of the thermosetting resin in the steps described later.

In addition, the exposure amount in the exposure treatment is not particularly limited, but is preferably 100 to 2000 mJ/cm ² , more preferably 200 to 1000 mJ/cm ² . Thereby, underexposure and overexposure in the photosensitive resin layer 2510 can be suppressed. As a result, high patterning accuracy can finally be realized.

After that, if necessary, the photosensitive resin layer 2510 is subjected to post-exposure heat treatment.

The temperature of the post-exposure heat treatment is not particularly limited, but is preferably 50 to 150° C., more preferably 50 to 130° C., further preferably 55 to 120° C., and particularly preferably 60 to 110° C. °C. By performing the post-exposure heat treatment at such a temperature, the catalytic action of the generated acid is sufficiently enhanced, so that the thermosetting resin can be sufficiently reacted in a shorter time. On the other hand, if the temperature is too high, the diffusion of the acid may be accelerated, and there is a possibility that the processing accuracy of the patterning may be lowered, but such a concern can be reduced as long as it is within the above-mentioned range.

In addition, when the temperature of the post-exposure heat treatment is less than the aforementioned lower limit value, the action of a catalyst such as an acid cannot be sufficiently enhanced, and the reaction rate of the thermosetting resin may decrease or time may be required. On the other hand, if the temperature of the post-exposure heat treatment is higher than the above-mentioned upper limit value, the diffusion of the acid is accelerated (widening), and there is a possibility that the processing accuracy of the patterning may be lowered.

On the other hand, the time of the post-exposure heat treatment is appropriately set according to the temperature of the post-exposure heat treatment, but among the above-mentioned temperatures, it is preferably 1 to 30 minutes, more preferably 2 to 20 minutes, and still more preferably Set it to 3~15 minutes. By performing the post-exposure heat treatment for such a time, the thermosetting resin can be sufficiently reacted, the diffusion of the acid can be suppressed, and the reduction in the processing accuracy of the patterning can be suppressed.

In addition, the environment of the post-exposure heat treatment is not particularly limited, and may be an inert gas environment, a reducing gas environment, or the like, and is set to an atmospheric environment in consideration of work efficiency and the like.

In addition, the environmental pressure of the post-exposure heat treatment is not particularly limited, and may be under reduced pressure or under increased pressure, and is set to normal pressure in consideration of work efficiency and the like. Thereby, the pre-exposure heat treatment can be performed relatively easily. In addition, normal pressure means a pressure of about 30-150 kPa, Preferably it is atmospheric pressure.

[2-3] The first development step S22

Next, a development process is performed on the photosensitive resin layer 2510 . As a result, an opening 423 penetrating the photosensitive resin layer 2510 is formed in a region corresponding to the light shielding portion of the mask 412 (see FIG. 9( e )).

As a developer, an organic type developer, a water-soluble developer, etc. are mentioned, for example.

[2-4] The first hardening step S23

After the development process, the photosensitive resin layer 2510 is subjected to a curing process (post-development heat treatment). The conditions of the hardening treatment are not particularly limited, but are set to a heating temperature of about 160 to 250° C. and a heating time of about 30 to 240 minutes. Thereby, while suppressing the thermal influence on the semiconductor wafer 23, the photosensitive resin layer 2510 can be hardened, and the organic insulating layer 251 can be obtained.

[2-5] Wiring layer forming step S24

Next, a wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 9( f )). The wiring layer 253 is formed by patterning by a photolithography method and an etching method after obtaining a metal layer by a vapor deposition method such as sputtering and vacuum deposition, for example.

In addition, surface modification treatment such as plasma treatment may be performed before the formation of the wiring layer 253 .

[2-6] Second resin film arrangement step S25

Next, as shown in FIG.9(g), the photosensitive resin layer 2520 is obtained like the 1st resin film arrangement|positioning step S20. The photosensitive resin layer 2520 is arranged so as to cover the wiring layer 253 .

After that, if necessary, pre-exposure heat treatment is performed on the photosensitive resin layer 2520 . The processing conditions are, for example, the conditions described in the first resin film arrangement step S20.

[2-7] Second exposure step S26

Next, exposure processing is performed on the photosensitive resin layer 2520 . The processing conditions are, for example, the conditions described in the first exposure step S21.

After that, if necessary, the photosensitive resin layer 2520 is subjected to post-exposure heat treatment. The processing conditions are, for example, the conditions described in the first exposure step S21.

[2-8] Second development step S27

Next, a development process is performed on the photosensitive resin layer 2520 . The processing conditions are, for example, the conditions described in the first development step S22. Thereby, the opening part 424 which penetrates the photosensitive resin layers 2510 and 2520 is formed (refer FIG.9(h)).

[2-9] Second hardening step S28

After the development process, the photosensitive resin layer 2520 is subjected to a curing process (post-development heat treatment). The hardening conditions are, for example, the conditions described in the first hardening step S23. In this way, the photosensitive resin layer 2520 is cured to obtain the organic insulating layer 252 (see FIG. 10( i )).

In addition, in the present embodiment, the upper wiring layer 25 has two layers of the organic insulating layer 251 and the organic insulating layer 252, but may have three or more layers. In this case, a series of steps from the wiring layer forming step S24 to the second curing step S28 may be repeatedly added after the second curing step S28.

[2-10] Through-wiring forming step S29

Next, the through wiring 254 shown in FIG. 10( i ) is formed in the opening portion 424 .

A known method is used for the formation of the through wiring 254, for example, the following method is used.

First, a seed layer (not shown) is formed on the organic insulating layer 252 . The seed layer is formed on the inner surface (side surface and bottom surface) of the opening portion 424 and on the upper surface of the organic insulating layer 252 .

As the seed layer, for example, a copper seed layer is used. In addition, the seed layer is formed by, for example, sputtering.

In addition, the seed layer may be formed of the same type of metal as the through wiring 254 to be formed, or may be formed of a different type of metal.

Next, in the seed layer (not shown), a resist layer (not shown) is formed on regions other than the openings 424 . Furthermore, the resist layer is used as a mask, and the opening portion 424 is filled with metal. For this filling, an electrolytic plating method is used, for example. Examples of metals to be filled include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like. In this way, the conductive material is embedded in the opening portion 424 to form the through wiring 254 .

Next, the resist layer not shown is removed. Further, a seed layer (not shown) on the organic insulating layer 252 is removed. In this case, for example, a flash etching method can be used.

In addition, the formation part of the through wiring 254 is not limited to the position shown in figure.

[3] Substrate peeling step S3

Next, as shown in FIG. 10( j ), the substrate 202 is peeled off. Thereby, the lower surface of the organic insulating layer 21 is exposed.

[4] Lower wiring layer forming step S4

Next, as shown in FIG. 10( k ), the lower wiring layer 24 is formed on the lower surface side of the organic insulating layer 21 . The lower layer wiring layer 24 can be formed by any method, for example, it can be formed in the same manner as in the above-described upper layer wiring layer forming step S2.

The lower wiring layer 24 is thus formed to be electrically connected to the upper wiring layer 25 via the through wirings 221 .

[5] Solder bump forming step S5

Next, as shown in FIG. 10(L) , solder bumps 26 are formed on the lower wiring layer 24 . Also, it can be based on It is necessary to form a protective film such as a solder resist layer on the upper wiring layer 25 or the lower wiring layer 24 .

The through-electrode substrate 2 is obtained as above.

In addition, the through-electrode substrate 2 as shown in FIG. 10(L) can be divided into a plurality of regions. Therefore, for example, the through-electrode substrates 2 are singulated along a dotted line shown in FIG. 10(L), whereby a plurality of through-electrode substrates 2 can be manufactured efficiently. In addition, for the singulation, a diamond cutter or the like can be used, for example.

[6] Lamination step S6

Next, the semiconductor package 3 is arranged on the singulated through-electrode substrate 2 . Thereby, the semiconductor device 1 shown in FIG. 5 is obtained.

The manufacturing method of the semiconductor device 1 can be applied to a wafer-level process or a panel-level process using a large-area substrate. Thereby, the manufacturing efficiency of the semiconductor device 1 can be improved, and cost reduction can be achieved.

<Negative photosensitive resin composition>

Next, each component of the negative photosensitive resin composition (hereinafter, also simply referred to as "photosensitive resin composition") of the present embodiment will be described. Moreover, the photosensitive resin composition of this invention may be a varnish-like solution or a film form.

The photosensitive resin composition of the present embodiment includes a thermosetting resin, a photopolymerization initiator as a photosensitive agent, and a coupling agent containing an acid anhydride as a functional group. Such a photosensitive resin composition can form an organic insulating layer 21 having good adhesion to inorganic materials and metal materials such as the semiconductor wafer 23 , the through wirings 22 , 221 , 222 and the wiring layer 253 by the action of the coupling agent.

(thermosetting resin)

The thermosetting resin preferably includes, for example, a thermosetting resin that is semi-hardened (solid state) at normal temperature (25°C). This thermosetting resin is formed into a desired shape by being heated and pressurized and melted during molding, and then hardened. Thereby, the organic insulating layers 21, 251, and 252 utilizing the properties of the thermosetting resin are obtained.

環之樹脂；不飽和聚酯樹脂；雙順丁烯二醯亞胺化合物等順丁烯二醯亞胺樹脂；聚胺酯(polyurethane)樹脂；鄰苯二甲酸二烯丙酯(diallyl phthalate)樹脂；聚矽氧系樹脂；苯并

(benzoxazine)樹脂；聚醯亞胺樹脂；聚醯胺醯亞胺樹脂；苯環丁烯(Benzocyclobutene)樹脂；酚醛清漆型氰酸酯樹脂(cyanate resin)、雙酚A型氰酸酯樹脂、雙酚E型氰酸酯樹脂、四甲基雙酚F型氰酸酯樹脂等氰酸鹽樹脂等的氰酸酯樹脂等。又，熱固性樹脂中，可以單獨使用該等中的1種類，可以併用具有不同重量平均分子量之2種類以上，亦可以併用1種類或2種類以上和該等的預聚物。 Examples of thermosetting resins include phenol novolak epoxy resins, novolak epoxy resins such as cresol novolak epoxy resins, cresol naphthol epoxy resins, biphenyl epoxy resins, Biphenyl aralkyl type epoxy resin, phenoxy resin, naphthalene skeleton type epoxy resin, bisphenol A type epoxy resin, bisphenol A diglycidyl ether type epoxy resin, bisphenol F type epoxy resin, bisphenol F diglycidyl ether type epoxy resin, bisphenol S diglycidyl ether type epoxy resin, glycidyl ether type epoxy resin, cresol novolac type ring Oxygen resin, aromatic multifunctional epoxy resin, aliphatic epoxy resin, aliphatic multifunctional epoxy resin, alicyclic epoxy resin, multifunctional alicyclic epoxy resin and other epoxy resins; urea (urea) resin , melamine resin, etc. have three

Ring resin; Unsaturated polyester resin; Maleimide resin such as bismaleimide compound; Polyurethane resin; Diallyl phthalate resin; Polyethylene Silicone resin; Benzo

(benzoxazine) resin; polyimide resin; polyamide imide resin; benzocyclobutene (Benzocyclobutene) resin; novolac type cyanate resin (cyanate resin), bisphenol A type cyanate resin, bisphenol A Cyanate resins such as cyanate resins such as phenol E-type cyanate resin and tetramethylbisphenol F-type cyanate resin, and the like. In the thermosetting resin, one of these may be used alone, two or more having different weight average molecular weights may be used in combination, or one or two or more of these prepolymers may be used in combination.

Among them, as the thermosetting resin, one containing epoxy resin is preferably used.

As an epoxy resin, the polyfunctional epoxy resin in which the epoxy group in 1 molecule is 2 or more is mentioned, for example. Since the polyfunctional epoxy resin has a plurality of epoxy groups in one molecule, the reactivity with the photopolymerization initiator is high. Therefore, even when exposure treatment is performed in a small amount and for a short period of time on the resin film of the photosensitive resin composition, the resin film can be sufficiently cured. In addition, the polyfunctional epoxy resin may be used alone, or may be used in combination with a plurality of the above-mentioned various thermosetting resins.

Moreover, as an epoxy resin, the polyfunctional epoxy resin of trifunctional or more can be used.

The polyfunctional epoxy resin is not particularly limited, and examples thereof include 2-[4-(2,3-glycidoxy)phenyl]-2-[4-[1,1-bis[4-( 2,3-Glycidoxy)phenyl]ethyl]phenyl]propane, phenol novolac type epoxy resin, tetrakis(glycidoxyphenyl)ethane, α-2,3-glycidoxyphenyl-ω-hydroxypoly(n=1~7){2-(2,3 - Glycidoxy) phenylidene (benzylidene)-2,3-glycidoxy phenylene}, 1-chloro-2,3-epoxypropane. formaldehyde. 2,7-naphthalene glycol polycondensate, dicyclopentadiene epoxy resin, etc. These may be used alone or in combination.

In addition, the thermosetting resin preferably includes a phenol novolac type epoxy resin, a cresol novolak type epoxy resin, a triphenylmethane type epoxy resin, a dicyclopentadiene type epoxy resin, a dicyclopentadiene type epoxy resin, and a One or more epoxy resins selected from the group consisting of a phenol A type epoxy resin and a tetramethylbisphenol F type epoxy resin, preferably a polyfunctional epoxy resin, further preferably a polyfunctional aromatic ring Oxygen resin. The thermosetting resin is rigid, so that the organic insulating layers 21 , 251 and 252 with good curability, high heat resistance and low thermal expansion coefficient can be obtained.

In addition, the thermosetting resin preferably includes the aforementioned resin that is generally solid at room temperature, and may include both a resin that is solid at room temperature and a resin that is liquid at room temperature. A photosensitive resin composition including such a thermosetting resin can achieve good embedment of the semiconductor wafer 23 and the like, improvement in the adhesion (tackiness) during film formation, and the organic insulating layers 21, 251, and 252 as cured products. Mechanical strength. As a result, it is possible to obtain the organic insulating layers 21 , 251 , and 252 with high mechanical strength, which suppress the generation of voids and achieve planarization.

When used in combination with a resin that is solid at room temperature and a resin that is liquid at room temperature, the amount of resin that is liquid at room temperature is preferably about 5 to 150 parts by mass, more preferably 10 parts by mass relative to 100 parts by mass of resin that is solid at room temperature. About to 100 parts by mass, more preferably about 15 to 80 parts by mass. If the ratio of the liquid resin is less than the aforementioned lower limit value, the embedding property of the semiconductor wafer 23 with respect to the photosensitive resin composition may decrease or the stability at the time of film formation may decrease. On the other hand, when the ratio of the liquid resin is larger than the above-mentioned upper limit value, the adhesiveness when the photosensitive resin composition is formed into a film may be deteriorated, and the mechanical strength of the organic insulating layers 21 , 251 , and 252 as cured products may be lowered. .

Examples of resins that are solid at room temperature include phenol novolac-type epoxy resins. Resin, cresol novolac epoxy resin, phenoxy resin, etc.

On the other hand, as a resin which is liquid at room temperature, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, alkylglycidyl ether, butanetetracarboxylic acid tetrakis(3,4) can be mentioned. -Epoxycyclohexylmethyl) modified ε-caprolactone, 3',4'-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate, 2-ethylhexylglycidyl ether , Trimethylolpropane polyglycidyl ether, etc. These may be used alone or in combination.

Moreover, it is preferable that the resin which is liquid at normal temperature contains both an aromatic compound and an aliphatic compound. The photosensitive resin composition containing such a compound is provided with appropriate flexibility when filmed mainly by an aliphatic compound, and is provided with shape retention when formed mainly by an aromatic compound. As a result, a photosensitive resin film that has both flexibility and shape retention properties can be obtained.

Furthermore, by including both a resin that is solid at room temperature and a resin that is liquid at room temperature, or that a resin that is liquid at room temperature includes both an aromatic compound and an aliphatic compound, the photosensitive resin composition can be used in the photosensitive resin composition. In the cured product, the glass transition temperature is increased without impairing the pattern formability, or the linear expansion coefficient is lowered without impairing the pattern formability.

The amount of the aliphatic compound is preferably about 5 to 150 parts by mass, more preferably about 10 to 80 parts by mass, and still more preferably about 15 to 50 parts by mass relative to 100 parts by mass of the aromatic compound. If the ratio of an aliphatic compound is less than the said lower limit, there exists a possibility that the flexibility of a film may fall depending on the composition etc. of the photosensitive resin composition. On the other hand, when the ratio of an aliphatic compound exceeds the said upper limit, there exists a possibility that the shape retention property of a film may fall depending on the composition etc. of the photosensitive resin composition.

The content of the epoxy resin is not particularly limited, but is preferably about 40 to 80 mass % of the entire solid content of the photosensitive resin composition, more preferably about 45 to 75 mass %, further preferably about 50 to 70 mass % . By setting the content of the epoxy resin within the aforementioned range, the pattern formability of the photosensitive resin layers 210 , 2510 , and 2520 including the photosensitive resin composition can be improved, and the strength of the organic insulating layers 21 , 251 , and 252 can be sufficiently improved. heat resistance or mechanical strength.

In addition, the solid content of the photosensitive resin composition means the nonvolatile content in the photosensitive resin composition, and means the remainder from which volatile components, such as water and a solvent, were removed. In addition, in this embodiment, when a solvent is included, content with respect to the whole solid content of the photosensitive resin composition means content with respect to the whole solid content of the photosensitive resin composition excluding the solvent.

(hardener)

Moreover, the photosensitive resin composition of this invention may contain a hardening|curing agent. The curing agent is not particularly limited as long as it promotes the polymerization reaction of the thermosetting resin. For example, when the thermosetting resin includes an epoxy resin, a curing agent having a phenolic hydroxyl group can be used. Specifically, a phenol resin can be used.

As a phenol resin, a novolac type phenol resin, a resol type phenol resin, a triphenylmethane type phenol resin, an aryl alkylene type phenol resin, etc. are mentioned, for example. Among these, novolak-type phenol resins can be preferably used in particular. Thereby, the photosensitive resin layers 210, 2510, and 2520 having favorable curability and favorable developing properties can be obtained.

The addition amount of the hardener is not particularly limited, but is preferably 25 parts by mass or more and 100 parts by mass or less, more preferably 30 parts by mass or more and 90 parts by mass or less, more preferably 35 parts by mass or more and 80 parts by mass, relative to 100 parts by mass of the resin. parts by mass or less. By setting the addition amount of the curing agent within the aforementioned range, the organic insulating layer 21 with high heat resistance and low thermal expansion coefficient can be obtained.

(thermoplastic resin)

Moreover, the photosensitive resin composition may further contain a thermoplastic resin. Thereby, the moldability of the photosensitive resin composition can be further improved, and the flexibility of the cured product of the photosensitive resin composition can be further improved. As a result, the organic insulating layers 21 , 251 , and 252 in which thermal stress and the like are hardly generated can be obtained.

Examples of thermoplastic resins include phenoxy resins, acrylic resins, polyamide resins (eg, nylon, etc.), thermoplastic urethane resins, polyolefin resins (eg, polyethylene, polypropylene, etc.), polycarbonates Ester, polyester resin (for example polyethylene terephthalate (polyethylene terephthalate), polybutylene terephthalate (polybutylene terephthalate), etc.), polyacetal, polyphenylene Sulfide (Polyphenylene sulfide), polyetheretherketone, liquid crystal polymer, fluororesin (such as polytetrafluoroethylene, polyvinylidene fluoride, etc.), modified polyphenylene ether, polysilver, polyether dust, polyarylate, Polyimide imide, polyether imide, thermoplastic polyimide, etc. In the photosensitive resin composition, one of these may be used alone, two or more having different weight average molecular weights may be used in combination, or one or two or more of these prepolymers may be used in combination.

Among them, as the thermoplastic resin, a phenoxy resin can be preferably used. Phenoxy resin, also known as polyhydroxy polyether, has the characteristic of having a larger molecular weight than epoxy resin. By including such a phenoxy resin, the reduction in flexibility of the cured product of the photosensitive resin composition can be suppressed.

Examples of phenoxy resins include bisphenol A-type phenoxy resins, bisphenol F-type phenoxy resins, copolymerized phenoxy resins of bisphenol A-type and bisphenol F-type, and biphenyl-type phenoxy resins. Base resin, bisphenol S-type phenoxy resin, copolymerized phenoxy resin of biphenyl-type phenoxy resin and bisphenol S-type phenoxy resin, etc., one or more of these can be used mixture.

Among these, a bisphenol A type phenoxy resin or a bisphenol A type and bisphenol F type copolymerized phenoxy resin can be preferably used.

Moreover, as a phenoxy resin, what has an epoxy group at both ends of a molecular chain can be used suitably. According to such a phenoxy resin, when an epoxy resin is used as a thermosetting resin, excellent solvent resistance and heat resistance can be provided to the hardened|cured material of the photosensitive resin composition.

Moreover, as a phenoxy resin, what is solid at normal temperature can be used suitably. Specifically, a phenoxy resin having a nonvolatile content of 90% by mass or more can be preferably used. By using such a phenoxy resin, the mechanical properties of the cured product can be improved.

The weight average molecular weight of the thermoplastic resin is not particularly limited, but is preferably about 10,000 to 100,000, more preferably about 20,000 to 80,000. By using such a relatively high molecular weight thermoplastic resin, good flexibility can be imparted to the cured product, and sufficient solubility in a solvent can be imparted.

In addition, the weight average molecular weight of the thermoplastic resin is measured, for example, by gel permeation chromatography (GPC) method polystyrene conversion value.

The addition amount of the thermoplastic resin is not particularly limited, but is preferably 10 parts by mass or more and 90 parts by mass or less, more preferably 15 parts by mass or more and 80 parts by mass or less, and still more preferably 20 parts by mass with respect to 100 parts by mass of the thermosetting resin. part or more and 70 parts by mass or less. By setting the addition amount of the thermoplastic resin within the aforementioned range, the balance of mechanical properties can be improved in the cured product of the photosensitive resin composition.

In addition, when the amount of thermoplastic resin added is less than the aforementioned lower limit value, there is a possibility that sufficient flexibility cannot be imparted to the cured product of the photosensitive resin composition depending on the components contained in the photosensitive resin composition or the blending ratio thereof. . On the other hand, when the addition amount of a thermoplastic resin exceeds the said upper limit, there exists a possibility that the mechanical strength of the hardened|cured material of the photosensitive resin composition may fall depending on the component contained in the photosensitive resin composition or its blending ratio.

(sensitizer)

As the photosensitizer, for example, a photoacid generator can be used. As a photoacid generator, the photoacid generator which produces|generates acid by irradiation of actinic rays, such as an ultraviolet-ray, and functions as a photopolymerization initiator of the above-mentioned curable resin is contained.

As a photoacid generator, an onium salt compound is mentioned, for example. Specifically, diazonium salts, iodonium salts such as diaryliodonium salts, periconium salts such as triaryl perionium salts, triaryl pyrylium salts, benzophenone ( benzil) pyridine thiocyanate, dialkyl phenacyl sulfonium salt (dialkyl phenacyl sulfonium salt), cationic photopolymerization initiators such as dialkyl hydroxyphenyl phosphonium salt, and the like.

In addition, in order to bring the photosensitive composition into contact with the metal, the photosensitive agent is preferably one that does not generate hydrogen fluoride by decomposition, such as a methyl (Methide) salt type or a borate type.

In particular, as a photosensitizer, it is preferable to use a triaryl perionium salt having a borate anion as a counter anion. Since this triaryl perionate contains a borate anion that is less corrosive to metals as a counter anion, corrosion of metal materials such as the through wirings 22 , 221 , 222 and the wiring layer 253 can be prevented for a longer period of time. As a result, the reliability of the semiconductor device 1 can be further improved.

The addition amount of the photosensitive agent is not particularly limited, but is preferably about 0.3 to 5 mass % of the entire solid content of the photosensitive resin composition, more preferably about 0.5 to 4.5 mass %, further preferably about 1 to 4 mass % . By setting the addition amount of the photosensitive agent within the aforementioned range, the pattern formability of the photosensitive resin layers 210 , 2510 , and 2520 including the photosensitive resin composition can be improved, and the long-term storage property of the photosensitive resin composition can be improved.

In addition, the photosensitive agent may be one that imparts negative-type photosensitivity to the photosensitive resin composition, or one that imparts positive-type photosensitivity, but considering the fact that openings with high aspect ratios can be formed with high accuracy, etc. Good is negative.

(coupling agent)

The photosensitive resin composition of this embodiment has a coupling agent containing an acid anhydride as a functional group. Such a photosensitive resin composition can form a resin film having good adhesion to inorganic materials and metal materials. Thereby, the organic insulating layers 21 , 251 , and 252 having good adhesion to, for example, the through wirings 22 , 221 , and 222 , the wiring layer 253 , or the semiconductor wafer 23 can be obtained.

In such an acid anhydride-containing coupling agent, an acid anhydride serving as a functional group dissolves an inorganic oxide and is coordinate-bonded with a cation (metal cation, etc.).

On the other hand, the alkoxy group contained in the acid anhydride-containing coupling agent is hydrolyzed to be, for example, a silanol. The silanol is hydrogen-bonded to the surface hydroxyl groups of the inorganic material.

Therefore, it is considered that a photosensitive resin composition having good adhesion to an inorganic material and a metal material can be obtained based on these bonding mechanisms.

Among the coupling agents, a coupling agent containing an acid anhydride as a functional group (hereinafter, also abbreviated as "an acid anhydride-containing coupling agent") can be used.

Specifically, a compound containing an alkoxysilyl group can be preferably used, and an alkyl carboxylic acid anhydride containing an alkoxysilyl group can be preferably used. According to this kind of coupling agent, it is possible to obtain inorganic materials and The adhesiveness of the metal material is more favorable, the sensitivity is favorable, and the photosensitive resin composition which is excellent in pattern formability.

Specific examples of the compound containing an alkoxysilyl group include 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, 3-dimethylmethoxysilicon succinic anhydride such as 3-dimethylethoxysilylpropyl succinic anhydride, 3-trimethoxysilylpropylcyclohexyldicarboxylic anhydride, 3-triethoxysilylpropyl Dicarboxylic acid anhydrides such as cyclohexyl dicarboxylic acid anhydride, 3-dimethylmethoxysilylpropylcyclohexyl dicarboxylic acid anhydride, 3-dimethylethoxysilylpropylcyclohexyl dicarboxylic acid anhydride, 3 -Trimethoxysilylpropylphthalic anhydride, 3-triethoxysilylpropylphthalic anhydride, 3-dimethylmethoxysilylpropylphthalic anhydride, 3- Phthalic anhydride such as dimethylethoxysilylpropyl phthalic anhydride is an alkyl carboxylic acid anhydride containing an alkoxysilyl group. These may be used alone or in combination.

Among these, an alkoxysilyl group-containing succinic anhydride can be preferably used, and especially 3-trimethoxysilylpropyl succinic anhydride can be preferably used. According to this coupling agent, the molecular length and molecular structure are optimized, so that the aforementioned adhesion and pattern forming properties become more favorable.

In addition, although a silane coupling agent is mentioned here, a titanium coupling agent, a zirconium coupling agent, etc. may be used.

The addition amount of the acid anhydride-containing coupling agent is not particularly limited, but is preferably about 0.3 to 5 mass % of the entire solid content of the photosensitive resin composition, more preferably about 0.5 to 4.5 mass %, and still more preferably 1 to 4 mass %. mass% or so. By setting the addition amount of the acid anhydride-containing coupling agent within the aforementioned range, it is possible to obtain, for example, particularly good adhesion to inorganic materials and metal materials such as the through wirings 22 , 221 , 222 , the wiring layer 253 , or the semiconductor wafer 23 . Organic insulating layers 21 , 251 , 252 . This contributes to the realization of the semiconductor device 1 that maintains high reliability such as the insulating properties of the organic insulating layers 21 , 251 , and 252 for a long period of time.

Moreover, when the addition amount of the coupling agent containing an acid anhydride is less than the said lower limit, the adhesiveness with respect to an inorganic material and a metal material may fall depending on the composition etc. of the coupling agent containing an acid anhydride. On the other hand, if the added amount of the acid anhydride-containing coupling agent is larger than the above-mentioned upper limit, the The composition and the like of the agent may reduce the photosensitivity and mechanical properties of the photosensitive resin composition.

Moreover, in addition to the coupling agent containing such an acid anhydride, other coupling agents may be added.

As another coupling agent, for example, a coupling agent including an amine group, an epoxy group, an acrylic group, a methacrylic group, a mercapto group, a vinyl group, a urea group, a thioether group and the like as a functional group can be mentioned. These may be used alone or in combination.

Among them, examples of coupling agents containing an amino group include bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, and γ-aminopropyl Trimethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-aminopropylmethyldimethoxysilane, N-β(aminoethyl)γ-aminopropyltrimethoxysilane, N-β(aminoethyl)γ-aminopropyltriethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane, N-β(aminoethyl) ) γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-amino-propyltrimethoxysilane, etc.

As a coupling agent containing an epoxy group, such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β-(3,4-epoxy Cyclohexyl) ethyl trimethoxy silane, γ-epoxypropyl trimethoxy silane, etc.

Examples of the acrylic group-containing coupling agent include γ-(methacryloyloxypropyl)trimethoxysilane, γ-(methacryloyloxypropyl)methyldimethoxysilane, γ- -(Methacryloyloxypropyl)methyldiethoxysilane, etc.

As a mercapto group-containing coupling agent, 3-mercaptopropyl trimethoxysilane etc. are mentioned, for example.

Examples of the vinyl group-containing coupling agent include vinyltris(β-methoxyethoxy)silane, vinyltriethoxysilane, vinyltrimethoxysilane, and the like.

As a ureido group-containing coupling agent, 3-ureidopropyl triethoxysilane etc. are mentioned, for example.

Examples of the thioether group-containing coupling agent include bis(3-(triethoxysilyl)) propyl) disulfide, bis(3-(triethoxysilyl)propyl)tetrasulfide, etc.

The addition amount of other coupling agents is not particularly limited, but is preferably about 1 to 200 mass % of the acid anhydride-containing coupling agent, more preferably about 3 to 150 mass %, and further preferably about 5 to 100 mass %. By setting the addition amount within this range, the above-mentioned effect is not impaired by the coupling agent containing an acid anhydride, and other effects are not added by the addition of other coupling agents. As a result, the effects of the two coupling agents can be simultaneously achieved.

(other additives)

Other additives may be added to the photosensitive resin composition as needed. Examples of other additives include antioxidants, fillers such as silica (silica), surfactants, sensitizers, and film forming agents.

As a surfactant, a fluorine type surfactant, a silicon type surfactant, an alkyl type surfactant, an acrylic type surfactant, etc. are mentioned, for example.

(solvent)

The photosensitive resin composition may contain a solvent. The solvent can be used without any particular limitation as long as it can dissolve each constituent component of the photosensitive resin composition and does not react with each constituent component.

Examples of the solvent include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, and diethylene glycol ethyl methyl ether. Ethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diacetophenone alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetic acid ester, propylene glycol monomethyl ether acetate, etc. These may be used alone or in combination.

<Photosensitive resin varnish>

The photosensitive resin composition may be in the form of a varnish.

The varnish-like photosensitive resin composition is prepared, for example, by uniformly mixing raw materials and a solvent. ready. Moreover, a solvent can be added as needed, and it can be varnished without using a solvent. In addition, after that, it can also be used for processing, such as filtration by a filter, and defoaming.

The solid content concentration in the varnish-like photosensitive resin composition is not particularly limited, but is preferably about 20 to 80% by mass. The viscosity of the varnish-like photosensitive resin composition having such a solid content concentration is optimized, so that it has good fluidity which is easy to penetrate even in a narrow space, and is less prone to film breakage.

<Photosensitive resin film>

Next, the photosensitive resin film of this embodiment is demonstrated.

The photosensitive resin film may be formed by forming a photosensitive resin composition into a film as described above, or may be a film obtained by coating the photosensitive resin composition on a carrier film.

As a manufacturing method of the latter photosensitive resin film, the following method is mentioned, after apply|coating a varnish-like photosensitive resin composition on a carrier film, for example.

As a coating apparatus, a spin coater, a spraying apparatus, an inkjet apparatus etc. are mentioned, for example.

The content rate of the solvent in the photosensitive resin film is not particularly limited, but is preferably 10% by mass or less of the entire photosensitive resin film. Thereby, the adhesiveness of the photosensitive resin film can be improved, and the curability of the photosensitive resin film can be improved. In addition, voids generated by volatilization of the solvent can be suppressed.

As a drying condition, the conditions of heating for 5 to 30 minutes at the temperature of 80-150 degreeC are mentioned, for example.

The photosensitive resin film laminated on the carrier film is useful from the viewpoints of workability, surface cleanliness, and the like. At this time, the carrier film may be in the form of a roll that can be wound up, or may be in the form of a sheet.

As a constituent material of the carrier film, a resin material, a metal material, etc. are mentioned, for example. Among them, examples of resin materials include polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polybutylene terephthalate, polycarbonates, and polysiloxanes. , Fluorine resin, polyimide resin, etc. Moreover, as the metal material, for example, copper or copper alloy, aluminum or aluminum alloy, Iron or ferroalloy, etc.

Among these, a carrier film containing polyester can be preferably used. This kind of carrier film preferably supports the photosensitive resin film, and the ease of peeling is also good.

Moreover, as needed, a cover film may be provided on the surface of the photosensitive resin film. This cover film protects the surface of the photosensitive resin film until the sticking operation is performed.

The constituent material of the cover film is appropriately selected from those listed as the constituent material of the carrier film, but from the viewpoint of protection and ease of peeling, a cover film containing polyester can be preferably used.

<Electronic equipment>

The electronic apparatus of this embodiment is equipped with the semiconductor device of this embodiment mentioned above.

This type of semiconductor device has a protective film excellent in chemical resistance, and therefore has high reliability. Therefore, high reliability is also given to the electronic apparatus of this embodiment.

The electronic device of the present embodiment is not particularly limited as long as it includes such a semiconductor device, and examples include mobile phones, smart phones, tablet terminals, information devices such as personal computers, and communication devices such as servers and routers. , Vehicle control computer, vehicle-mounted equipment such as vehicle-mounted navigation system, etc.

As mentioned above, although this invention was demonstrated based on the embodiment shown in figure, this invention is not limited to these.

For example, the photosensitive resin composition, the semiconductor device, and the electronic apparatus of the present invention may be those in which arbitrary elements are added to the above-mentioned embodiments.

In addition to semiconductor devices, the photosensitive resin composition and photosensitive resin film can be applied to, for example, MEMS (Micro Electro Mechanical Systems), structure forming materials for various sensors, liquid crystal display devices, and organic EL devices. The structure-forming material of the display device, etc.

[Example]

Next, the specific Example of this invention is demonstrated.

1. Preparation of photosensitive resin composition

(Example 1)

First, the raw materials shown in Table 1 and Table 2 were dissolved in propylene glycol monomethyl ether acetate (PGMEA) to prepare a solution.

Next, the prepared solution was filtered through a polypropylene filter having a pore diameter of 0.2 μm to obtain a negative-type photosensitive resin composition.

(Examples 2 to 11)

A photosensitive resin composition was obtained in the same manner as in Example 1, except that the raw materials were changed as shown in Table 1 and Table 2.

(Comparative Examples 1 to 4)

A photosensitive resin composition was obtained in the same manner as in Example 1, except that the raw materials were changed as shown in Table 1 and Table 2.

2. Evaluation of the photosensitive resin composition

2.1 Fabrication of test pieces

First, a silicon wafer with a size of 8 inches and a thickness of 725 μm was prepared.

Next, a varnish-like photosensitive resin composition was applied on the silicon wafer by a spin coater. Thereby, a liquid coating film having a thickness of 10 μm was obtained.

Next, the liquid coating film was dried at 120° C. for 5 minutes with a hot plate to obtain a coating film.

Next, the entire surface of the obtained coating film was exposed at 700 mJ/cm ² .

Next, PEB (Post Exposure Bake) was performed on the coating film after exposure at 70 degreeC for 5 minutes.

Next, it heated at 200 degreeC for 90 minutes, and obtained the test piece which has a cured film.

2.2 Adhesion test

2.2.1 Silicon adhesion test (room temperature)

Next, as follows, the obtained test piece was subjected to an adhesion test according to the cross-cut method defined in JIS K 5600-5-6:1999.

First, an incision is added to the photosensitive resin film using a tool. The incisions were provided so as to penetrate the photosensitive resin film at intervals of 1 mm, 10 in each length and width. Thereby, a total of 100 squares of 1 mm square were formed on the photosensitive resin film.

Next, a cellophane adhesive tape was attached so as to overlap these 100 squares. Furthermore, the cellophane adhesive tape was peeled off, and the number of objects peeled off in 100 squares was counted.

The count results are shown in Table 2.

2.2.2 Silicon adhesion test (high temperature)

The obtained test piece was subjected to an adhesion test in the same manner as in 2.2.1 after being placed under high temperature and high humidity under the following conditions. The evaluation results are shown in Table 2.

‧Temperature 85℃

‧85% relative humidity

‧Test time: 24 hours

2.2.3 Copper adhesion test (room temperature)

Adhesion at room temperature was performed in the same manner as in 2.2.1, except that the silicon wafer in 2.1 was changed to a silicon wafer in which Ti was subjected to a base treatment and then copper was vapor-deposited with a thickness of 300 nm. test. The evaluation results are shown in Table 2.

2.2.4 Copper adhesion test (high temperature)

Adhesion at high temperature was performed in the same manner as in 2.2.2, except that the silicon wafer in 2.1 was changed to a silicon wafer in which Ti was base-treated and then copper was vapor-deposited to a thickness of 300 nm. test. The evaluation results are shown in Table 2.

2.3 Evaluation of Pattern Formability

First, as shown in 2.1, a varnish-like photosensitive resin composition was applied on a silicon wafer by a spin coater. Thereby, a liquid coating film having a thickness of 10 μm was obtained.

Next, the liquid coating film was dried at 120° C. for 5 minutes with a hot plate to obtain a coating film.

Next, the coating film was exposed to light with an i-ray stepper (NSR-4425i, manufactured by Nikon Corporation) through the mask for negative pattern. After that, post-exposure heat treatment was performed at 70° C. for 5 minutes.

Next, after dissolving and removing the unexposed part by spray development using 25 degreeC propylene glycol monomethyl ether acetate (PGMEA) as a developing solution, it rinsed with isopropyl alcohol (IPA).

Next, it was visually confirmed whether or not a pattern was formed, and the pattern formability was evaluated according to the following evaluation criteria.

<Evaluation Criteria for Pattern Formability>

○: A pattern was obtained by dissolving the unexposed portion

×: No pattern can be obtained due to complete dissolution or no dissolution

The evaluation results are shown in Table 2.

As is clear from Table 2, the photosensitive resin films obtained in the respective Examples exhibited good adhesion to inorganic materials and metal materials.

[Industrial Availability]

The negative photosensitive resin composition of the present invention contains a thermosetting resin, a photopolymerization initiator, and a coupling agent containing an acid anhydride as a functional group. By using the coupling agent containing an acid anhydride as a functional group, the adhesiveness of the resin film formed of the negative photosensitive resin composition, the semiconductor wafer formed of an inorganic material or a metal material, or various metal wiring becomes favorable. Therefore, the reliability of the semiconductor device using such a negative photosensitive resin composition can be improved. Therefore, the present invention has industrial applicability.

Claims (10)

A negative photosensitive resin composition, comprising: a thermosetting resin, which is a solid component at room temperature; a photopolymerization initiator; and a coupling agent, which contains an acid anhydride as a functional group, and the component that is solid at room temperature is selected Free phenol novolac type epoxy resin, cresol novolac type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, bisphenol A type epoxy resin, and tetramethyl bis One or more of the group consisting of phenol F type epoxy resins. The negative photosensitive resin composition of claim 1 further contains a phenoxy resin that is solid at room temperature. The negative photosensitive resin composition of claim 1, wherein the photopolymerization initiator is a triaryl perylene salt. The negative photosensitive resin composition of claim 1, wherein the coupling agent is a compound containing an alkoxysilyl group. The negative photosensitive resin composition of claim 1, wherein the acid anhydride is succinic anhydride. The negative-type photosensitive resin composition of claim 1, wherein the negative-type photosensitive resin composition further contains a solvent, and is dissolved in the solvent to form a varnish. The negative photosensitive resin composition of claim 1, wherein the component that is solid at room temperature is selected from the group consisting of phenol novolac epoxy resin, cresol novolac epoxy resin, and triphenylmethane One or more of the group consisting of epoxy resins. A semiconductor device comprising: a semiconductor wafer; and a resin film provided on the semiconductor wafer and including the negative-type photosensitivity of claim 1 Hardened product of resin composition. The semiconductor device of claim 8, wherein a rewiring layer is embedded in the resin film, and the rewiring layer is electrically connected to the semiconductor chip. An electronic machine, which is provided with the semiconductor device of item 8 or 9 of the scope of the patent application.

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