TWI748799B - Metallic material and method for manufacturing the same - Google Patents
Metallic material and method for manufacturing the same Download PDFInfo
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本發明係有關於一種金屬材料及其製造方法,且特別是有關於一種具有高電化學活性之金屬材料及其製造方法。The present invention relates to a metal material and a manufacturing method thereof, and particularly relates to a metal material with high electrochemical activity and a manufacturing method thereof.
金屬有機骨架(metal-organic framework,MOF)及共價有機骨架(covalent-organic framework,COF)具有高的比表面積、規則的孔洞率及可調式結構。再者,MOF及COF的薄膜形成於導電基材表面上後,可於其內建構活性位置(active site)。所以,基於MOF及COF薄膜之材料於電化學之應用(例如:電催化及電荷存儲)具有很大的潛力。近來,以MOF及COF的薄膜來開發電化學活性之材料逐漸受到重視,尤其是金屬材料。Metal-organic framework (MOF) and covalent-organic framework (COF) have high specific surface area, regular porosity and adjustable structure. Furthermore, after the MOF and COF films are formed on the surface of the conductive substrate, active sites can be constructed in them. Therefore, materials based on MOF and COF films have great potential for electrochemical applications (such as electrocatalysis and charge storage). Recently, the use of MOF and COF films to develop electrochemically active materials has gradually attracted attention, especially metal materials.
目前,噴灑塗佈(spray coating)MOF之薄膜於導電基材表面上,再以定電位方式進行氧化鈷的電沉積。雖然氧化鈷可與導電基材電性連接,但卻不能進入MOF薄膜的奈米孔洞內,僅能被電沉積於MOF的表面及其外圍,故無法有效提升其比表面積及電化學活性。At present, spray coating (spray coating) a MOF film on the surface of a conductive substrate, and then electro-depositing cobalt oxide by a constant potential method. Although cobalt oxide can be electrically connected to the conductive substrate, it cannot enter the nanopores of the MOF film. It can only be electrodeposited on the surface of the MOF and its periphery, so it cannot effectively improve its specific surface area and electrochemical activity.
另一種使用MOF電沉積金屬之方法係以定電位式(potentiostatic)或變動電位(potentiodynamic)式電沉積金屬於MOF薄膜後,分次以去離子水、鹽酸及過氧化氫溶液反覆沖洗電沉積之金屬,以製得粉狀金屬材料。此粉狀金屬材料應用於電化學領域時,必須以噴灑塗佈或滴落塗佈(drop-casting)等方式塗佈粉狀金屬材料於導電基材上。此將導致粉狀金屬材料與導電基材間存在有較大的空隙,而增大電阻。再者,由於粉狀金屬材料與導電基材相連接,而減少粉狀金屬材料之比表面積,故大幅降低粉狀金屬材料之活性。Another method of using MOF to electrodeposit metal is to deposit the metal on the MOF film in a potentiostatic or potentiodynamic method, and then repeatedly wash the electrodeposited with deionized water, hydrochloric acid and hydrogen peroxide solution. Metal to make powdered metal materials. When the powdered metal material is applied in the electrochemical field, it is necessary to coat the powdered metal material on the conductive substrate by spray coating or drop-casting. This will result in a larger gap between the powdered metal material and the conductive substrate, which will increase the electrical resistance. Furthermore, since the powdery metal material is connected to the conductive substrate, the specific surface area of the powdery metal material is reduced, and the activity of the powdery metal material is greatly reduced.
有鑑於此,亟需發展一種新的金屬材料之製造方法,以改善習知的金屬材料及其製造方法之上述缺點。In view of this, it is urgent to develop a new manufacturing method of metal materials to improve the above-mentioned shortcomings of conventional metal materials and manufacturing methods.
有鑑於上述之問題,本發明之一態樣是在提供一種金屬材料之製造方法。此製造方法使用脈衝電流電沉積金屬離子於孔洞模板的奈米孔洞內,以提升所製得之金屬材料的電化學活性,從而增加金屬材料之應用性。In view of the above-mentioned problems, one aspect of the present invention is to provide a method for manufacturing a metal material. This manufacturing method uses pulsed current to electrodeposit metal ions in the nanopores of the hole template to enhance the electrochemical activity of the prepared metal material, thereby increasing the applicability of the metal material.
本發明之另一態樣是在提供一種金屬材料。此金屬材料係利用前述之金屬材料之製造方法所製得。Another aspect of the present invention is to provide a metal material. This metal material is produced by the aforementioned manufacturing method of metal material.
根據本發明之一態樣,提出一種金屬材料之製造方法。此金屬材料之製造方法包含提供包含導電基材及孔洞模板之模板基材、放置模板基材於電解液中,以及電沉積金屬前驅物於孔洞模板所具有之複數個奈米孔洞內及導電基材的表面上,以獲得金屬材料,其中電沉積係藉由對模板基材施加脈衝電流來進行。孔洞模板設置於導電基材上,且電解液包含金屬前驅物,此金屬前驅物係對應於金屬材料。According to one aspect of the present invention, a method for manufacturing a metal material is provided. The manufacturing method of this metal material includes providing a template substrate including a conductive substrate and a hole template, placing the template substrate in an electrolyte, and electrodepositing a metal precursor in the plurality of nano-holes and conductive substrates of the hole template. On the surface of the material to obtain the metal material, the electrodeposition is carried out by applying a pulse current to the template substrate. The hole template is arranged on the conductive substrate, and the electrolyte contains a metal precursor, and the metal precursor corresponds to the metal material.
依據本發明之一實施例,此些奈米孔洞之孔徑為1nm至5nm。According to an embodiment of the present invention, the pore diameter of these nano-holes is 1 nm to 5 nm.
依據本發明之另一實施例,孔洞模板包含電絕緣性有機骨架。According to another embodiment of the present invention, the hole template includes an electrically insulating organic framework.
依據本發明之又一實施例,脈衝電流之暫停時間為0.1秒至10秒。According to another embodiment of the present invention, the pause time of the pulse current is 0.1 to 10 seconds.
依據本發明之又一實施例,脈衝電流之施加時間為0.1秒至10秒。According to another embodiment of the present invention, the pulse current application time is 0.1 to 10 seconds.
依據本發明之又一實施例,金屬前驅物於電解液中之濃度為不小於0.01M。According to another embodiment of the present invention, the concentration of the metal precursor in the electrolyte is not less than 0.01M.
依據本發明之又一實施例,金屬前驅物之水合尺寸為不大於0.5nm。According to another embodiment of the present invention, the hydration size of the metal precursor is not greater than 0.5 nm.
依據本發明之又一實施例,於提供模板基材前,金屬材料之製造方法選擇性包含以溶劑熱法形成孔洞模板於導電基材上。According to another embodiment of the present invention, before providing the template substrate, the manufacturing method of the metal material optionally includes forming a hole template on the conductive substrate by a solvothermal method.
本發明之另一態樣係提供一種金屬材料。此金屬材料利用前述之金屬材料的製造方法所製得。Another aspect of the present invention is to provide a metal material. This metal material is produced by the aforementioned metal material manufacturing method.
依據本發明之一實施例,金屬材料之活性金屬比例為不小於15%。According to an embodiment of the present invention, the active metal ratio of the metal material is not less than 15%.
應用本發明之金屬材料之製造方法,其中使用脈衝電流電沉積金屬離子於孔洞模板中的奈米孔洞內,以提升所製得之金屬材料的電化學活性,從而增加金屬材料之應用性。The method for manufacturing the metal material of the present invention uses pulsed current to electrodeposit metal ions in the nanopores in the hole template to enhance the electrochemical activity of the metal material, thereby increasing the applicability of the metal material.
以下仔細討論本發明實施例之製造和使用。然而,可以理解的是,實施例提供許多可應用的發明概念,其可實施於各式各樣的特定內容中。所討論之特定實施例僅供說明,並非用以限定本發明之範圍。The manufacture and use of the embodiments of the present invention are discussed in detail below. However, it can be understood that the embodiments provide many applicable inventive concepts, which can be implemented in various specific contents. The specific embodiments discussed are for illustration only, and are not intended to limit the scope of the present invention.
本發明此處所稱之「金屬材料」係指被拘限於奈米孔洞內之金屬材料,以提高金屬材料的活性。其次,本發明之金屬材料的製造方法係使用形成於導電基材上之孔洞模板做為模板基材,以從孔洞模板的底部(即模板與導電基材間之界面處)開始電沉積,而非從孔洞模板的表面開始電沉積,其中模板基材包含電絕緣性有機骨架。The "metallic material" referred to herein in the present invention refers to the metallic material confined to the nanopores to increase the activity of the metallic material. Secondly, the manufacturing method of the metal material of the present invention uses the hole template formed on the conductive substrate as the template substrate to start electrodeposition from the bottom of the hole template (that is, the interface between the template and the conductive substrate), and Electrodeposition is not started from the surface of the hole template, where the template substrate contains an electrically insulating organic framework.
再者,此製造方法係以脈衝電沉積方式避免奈米孔洞內金屬前驅物的濃度不足或過高。因此,本發明之製造方法可製得被拘限於奈米孔洞內之金屬材料,以提升其電化學活性,故增加其應用性。Furthermore, this manufacturing method uses pulse electrodeposition to avoid insufficient or excessively high concentrations of metal precursors in the nanopores. Therefore, the manufacturing method of the present invention can prepare the metal material confined in the nanopore to enhance its electrochemical activity, thereby increasing its applicability.
請參閱圖1,金屬材料之製造方法100係先提供模板基材,如操作110所示。模板基材包含導電基材及孔洞模板,且孔洞模板設置於導電基材上。導電基材沒有特別限定,且可為本發明所屬技術領域中具有通常知識者所習知之導電材料,例如:FTO基材或金屬基板。Please refer to FIG. 1, the
在一些實施例中,孔洞模板可包含電絕緣性有機骨架。在一些具體例中,電絕緣性有機骨架可包含金屬有機骨架或共價有機骨架。舉例而言,金屬有機骨架可包含但不限於MOF-808、MOF-802、MOF-841、MOF-804、MOF-805、MOF-806、MOF-177、HKUST-1、UiO-66、UiO-67、PCN-222、MIL-101及MOF-525。此外,共價有機骨架可包含但不限於COF-1、COF-5、COF-6、COF-102、COF-105、COF-108及MF-8。In some embodiments, the hole template may include an electrically insulating organic framework. In some specific examples, the electrically insulating organic framework may include a metal organic framework or a covalent organic framework. For example, the metal organic framework may include, but is not limited to, MOF-808, MOF-802, MOF-841, MOF-804, MOF-805, MOF-806, MOF-177, HKUST-1, UiO-66, UiO- 67, PCN-222, MIL-101 and MOF-525. In addition, the covalent organic framework may include, but is not limited to, COF-1, COF-5, COF-6, COF-102, COF-105, COF-108, and MF-8.
在一些實施例中,孔洞模板具有複數個奈米孔洞,此些奈米孔洞之孔徑為1nm至5nm。當奈米孔洞之孔徑為前述之範圍時,可提升所製得之金屬材料的電化學活性。較佳地,奈米孔洞之孔徑為1nm至3nm。In some embodiments, the hole template has a plurality of nano-holes, and the pore diameter of these nano-holes is 1 nm to 5 nm. When the pore diameter of the nanopore is within the aforementioned range, the electrochemical activity of the metal material produced can be improved. Preferably, the pore diameter of the nano-holes is 1 nm to 3 nm.
在一些實施例中,於提供模板基材前,金屬材料之製造方法100可選擇性包含形成步驟。此形成步驟係形成孔洞模板於導電基材上。在一些具體例中,形成步驟可使用溶劑熱法(solvothermal method)完成。In some embodiments, before providing the template substrate, the
申言之,習知之技術係以電噴灑或塗佈等方式,於導電基材上形成模板,而易導致導電基材與模板間有空隙,故增加金屬材料直接沉積於導電基材及此空隙的機率,而不能沉積於孔洞模板中的奈米孔洞內。故相較於習知之技術,金屬材料的製造方法100利用溶劑熱法,直接從導電基材之表面生長孔洞模板,故本發明之孔洞模板與導電基材間不具有空隙,故金屬材料可電沉積於孔洞模板的奈米孔洞內。It is said that the conventional technology uses electrospraying or coating to form a template on the conductive substrate, which is easy to cause a gap between the conductive substrate and the template. Therefore, the metal material is directly deposited on the conductive substrate and this gap. The probability that it cannot be deposited in the nano-holes in the hole template. Therefore, compared with the conventional technology, the metal
請再參閱圖1,於前述操作110後,放置模板基材於電解液中,如操作120所示。此電解液含有金屬前驅物,且金屬前驅物係與金屬材料對應的金屬離子。當金屬前驅物不為與金屬材料對應之金屬離子時,電沉積製得之金屬將異於金屬材料,而無法獲得預期的金屬材料。Please refer to FIG. 1 again. After the
在一些實施例中,電解液可包含無機酸根離子、金屬前驅物,以及可與金屬前驅物形成錯合物之其他離子。舉例而言,無機酸根離子可包含但不限於硫酸根離子、亞硫酸根離子、硝酸根離子、碳酸根離子及磷酸根離子。其他離子可包含但不限於鹵素離子、四氟硼酸、六氟磷酸、雙(三氟甲磺醯基)醯亞胺及三羥甲基氨基甲烷等。前述之無機酸根離子及其他離子沒有特定限制,惟以不會影響模板基材的安定性為主要目的。In some embodiments, the electrolyte may include inorganic acid ions, metal precursors, and other ions that can form complexes with the metal precursors. For example, the inorganic acid ion may include, but is not limited to, sulfate ion, sulfite ion, nitrate ion, carbonate ion, and phosphate ion. Other ions may include, but are not limited to, halogen ions, tetrafluoroboric acid, hexafluorophosphoric acid, bis(trifluoromethanesulfonyl)imide, and tris. The aforementioned inorganic acid ions and other ions are not specifically limited, but the main purpose is not to affect the stability of the template substrate.
此外,金屬前驅物包含可被還原成金屬材料之金屬離子。在一些實施例中,金屬前驅物可包含過渡金屬離子,較佳可為週期表第一列之過渡金屬離子,且更佳可為鈷(II及III)離子及鎳(II及III)離子。In addition, the metal precursor contains metal ions that can be reduced to metal materials. In some embodiments, the metal precursor may include transition metal ions, preferably transition metal ions in the first column of the periodic table, and more preferably cobalt (II and III) ions and nickel (II and III) ions.
在一些具體例中,金屬前驅物之濃度為不小於0.01M。當金屬前驅物之濃度為前述之範圍時,於電沉積過程中,金屬前驅物能夠藉由濃度差擴散到孔洞模板之奈米孔洞內,以補充前一次電沉積所消耗之金屬前驅物,故可維持奈米孔洞內之電沉積的進行。較佳地,金屬前驅物之濃度可為0.01M至0.05M。In some specific examples, the concentration of the metal precursor is not less than 0.01M. When the concentration of the metal precursor is in the aforementioned range, during the electrodeposition process, the metal precursor can diffuse into the nanopores of the hole template through the concentration difference to supplement the metal precursor consumed by the previous electrodeposition. It can maintain the progress of electrodeposition in nanopores. Preferably, the concentration of the metal precursor can be 0.01M to 0.05M.
本發明所指之金屬前驅物的水合尺寸係指金屬前驅物溶於水中後,被水分子所包圍而形成之水合物的尺寸。在一些具體例中,金屬前驅物之水合尺寸為不大於0.5nm。當金屬前驅物之水合尺寸為前述之範圍時,金屬前驅物可進入孔洞模板中的奈米孔洞內,以被還原成金屬原子而電沉積於奈米孔洞內。較佳地,金屬前驅物之水合尺寸可為0.2nm至1.0nm。The hydration size of the metal precursor referred to in the present invention refers to the size of the hydrate formed when the metal precursor is dissolved in water and surrounded by water molecules. In some specific examples, the hydration size of the metal precursor is not greater than 0.5 nm. When the hydration size of the metal precursor is within the aforementioned range, the metal precursor can enter the nanoholes in the hole template to be reduced to metal atoms and be electrodeposited in the nanoholes. Preferably, the hydration size of the metal precursor can be 0.2 nm to 1.0 nm.
於前述操作120後,電沉積金屬離子於孔洞模板中的複數個奈米孔洞內及導電基材的表面上,以獲得金屬材料,如操作130所示。前述之電沉積係藉由施加脈衝脈衝電流於模板基材來完成。當模板基材包含孔洞模板時,由下往上從孔洞模板的底部開始電沉積金屬材料,以限制於孔洞模板的奈米孔洞內進行沉積,而非電沉積金屬材料於孔洞模板的外部表面。此外,當電沉積未使用脈衝電流來完成時,金屬材料易電沉積於孔洞模板的表面,而非其奈米孔洞內,故降低金屬材料的電化學活性。After the
脈衝電流係施加電流,持續一時間(稱作施加時間)後,停止施加電流,再持續另一時間(稱作暫停時間)。於施加時間中,奈米孔洞內之金屬前驅物進行電沉積,而在暫停時間中,奈米孔洞外之金屬前驅物藉由濃度差擴散至奈米孔洞內以補充前述電沉積所消耗之金屬前驅物,並備以進行下一次的電沉積。The pulse current system applies current for a period of time (called the application time), then stops applying the current, and then continues for another time (called the pause time). During the application time, the metal precursor in the nano-hole is electrodeposited, and during the pause time, the metal precursor outside the nano-hole diffuses into the nano-hole by the concentration difference to supplement the metal consumed by the electrodeposition. The precursor is prepared for the next electrodeposition.
在一些實施例中,脈衝電流之暫停時間為0.1秒至10秒。當脈衝電流之暫停時間為前述之範圍時,金屬前驅物能夠於於電流暫停施加時,藉由濃度差擴散到奈米孔洞內,以補充前一次電沉積所消耗之金屬前驅物,故可維持奈米孔洞內之電沉積的進行。較佳地,脈衝電流之暫停時間可為5秒至10秒。In some embodiments, the pause time of the pulse current is 0.1 to 10 seconds. When the pause time of the pulse current is in the aforementioned range, the metal precursor can diffuse into the nanopores through the concentration difference when the current is temporarily applied to supplement the metal precursor consumed by the previous electrodeposition, so it can be maintained Electrodeposition in nanopores. Preferably, the pause time of the pulse current can be 5 seconds to 10 seconds.
在一些具體例中,孔洞模板的奈米孔洞之孔徑為1nm至5nm時,脈衝電流之暫停時間為0.1秒至10秒。較佳地,奈米孔洞之孔徑愈大時,暫停時間可愈短,而奈米孔洞之孔徑愈小時,暫停時間則需愈長。由於奈米孔洞之孔徑愈大,金屬前驅物擴散的速度愈快,故暫停時間可愈短。In some specific examples, when the pore size of the nano-hole of the hole template is 1 nm to 5 nm, the pause time of the pulse current is 0.1 second to 10 seconds. Preferably, the larger the diameter of the nanohole, the shorter the pause time, and the smaller the diameter of the nanohole, the longer the pause time. Since the larger the diameter of the nanopore, the faster the diffusion rate of the metal precursor, so the pause time can be shorter.
在一些實施例中,脈衝電流之施加時間為0.1秒至10秒。當脈衝電流之施加時間為前述之範圍時,提供適量的電量,以使電解液中之金屬前驅物電沉積為金屬材料,而降低奈米孔洞內金屬前驅物的濃度,故當脈衝電流暫停施加時,金屬前驅物可遞補至奈米孔洞內。較佳地,脈衝電流之施加時間為5秒至10秒。In some embodiments, the pulse current application time is 0.1 to 10 seconds. When the application time of the pulse current is in the aforementioned range, an appropriate amount of electricity is provided so that the metal precursor in the electrolyte is electrodeposited into a metal material, and the concentration of the metal precursor in the nanopore is reduced, so when the pulse current is temporarily applied At the time, the metal precursor can be filled into the nano-hole. Preferably, the pulse current application time is 5 seconds to 10 seconds.
在一些實施例中,脈衝電流的循環次數為100次至400次,較佳可為200次。前述之脈衝電流之暫停時間與相鄰之施加時間的加總為一次循環的時間,且對應的暫停電流操作與施加電流操作的結合為一次循環的電流操作。當循環次數為100次至400次時,所提供的總電量,足夠以電沉積形成適量的金屬材料(即適量的負載量),從而利於金屬材料電沉積於奈米孔洞內。In some embodiments, the number of cycles of the pulse current is 100 to 400 times, preferably 200 times. The sum of the pause time of the aforementioned pulse current and the adjacent application time is the time of one cycle, and the combination of the corresponding pause current operation and the current application operation is the current operation of one cycle. When the number of cycles is 100 to 400, the total amount of electricity provided is sufficient to form an appropriate amount of metal material (that is, an appropriate amount of load) by electrodeposition, thereby facilitating the electrodeposition of the metal material in the nanopore.
本發明之另一目的係提供一種金屬材料。此金屬材料係利用前述之金屬材料的製造方法所製得。金屬材料沉積於導電基材的表面上及孔洞模板中的奈米孔洞內,而具有良好之電化學活性。因此,金屬材料不需要從孔洞模板被移除下來,而可直接應用於電化學偵測及催化之領域。Another object of the present invention is to provide a metal material. This metal material is produced by the aforementioned metal material manufacturing method. The metal material is deposited on the surface of the conductive substrate and in the nanoholes in the hole template, and has good electrochemical activity. Therefore, the metal material does not need to be removed from the hole template, but can be directly applied to the field of electrochemical detection and catalysis.
然而,傳統上,電沉積於MOF薄膜(做為模板)之金屬材料由於電化學活性不足,而需要從MOF薄膜被移除,不能直接使用,且經移除後之金屬材料為粉末狀。因此粉末狀金屬材料需要被塗佈於導電基材上,才可做為電極。故,於此塗佈過程中會發生粉末狀金屬材料與導電基材的密合問題,或者粉末狀金屬材料平鋪於導電基材後將減小其比表面積,而降低其電化學活性。所以,相較於傳統之粉末狀金屬材料及其製造方法,本發明之金屬材料的製造方法較簡單(減少移除步驟),且所製得之金屬材料可直接使用,故可提升此金屬材料之應用性。However, traditionally, the metal material electrodeposited on the MOF film (as a template) needs to be removed from the MOF film due to insufficient electrochemical activity and cannot be used directly, and the metal material after the removal is in powder form. Therefore, the powdered metal material needs to be coated on the conductive substrate before it can be used as an electrode. Therefore, during the coating process, adhesion problems between the powdered metal material and the conductive substrate may occur, or the powdered metal material will decrease its specific surface area and reduce its electrochemical activity after being spread on the conductive substrate. Therefore, compared with the traditional powdered metal material and its manufacturing method, the manufacturing method of the metal material of the present invention is simpler (reduction steps are reduced), and the prepared metal material can be used directly, so the metal material can be improved The applicability.
申言之,金屬材料可應用於與電化學活性有關之領域。在一些實施例中,金屬材料可應用於電化學的偵測元件,例如電極或探針。在另一些實施例中,金屬材料可應用於電化學的催化反應,例如觸媒。在一些具體例中,金屬材料可做為電極,以偵測水體中之氧化物。It is said that metal materials can be used in fields related to electrochemical activity. In some embodiments, metal materials can be applied to electrochemical detection elements, such as electrodes or probes. In other embodiments, metal materials can be applied to electrochemical catalytic reactions, such as catalysts. In some specific examples, metal materials can be used as electrodes to detect oxides in water.
如前所述,孔洞模板可包含電絕緣性有機骨架。當孔洞模板使用電絕緣性有機骨架時,此有機骨架於酸性及中性環境中相當穩定度,且於電化學反應過程中可維持結構完整性,並可阻止此過程中金屬材料的電化學誘導聚集,從而提升金屬材料的直接應用性。As mentioned above, the hole template may include an electrically insulating organic framework. When the hole template uses an electrically insulating organic framework, the organic framework is quite stable in acidic and neutral environments, and can maintain structural integrity during the electrochemical reaction process, and can prevent the electrochemical induction of metal materials in the process Aggregate, thereby enhancing the direct applicability of metal materials.
在一些實施例中,金屬材料於孔洞模板內之單位面積的負載量為不小於5×10 -9mol/cm 2。當金屬材料於孔洞模板內之單位面積的負載量為前述之範圍時,金屬材料被電沉積於孔洞模板中的奈米孔洞內,而具有比沉積於平面之金屬膜更大的比表面積,故具有較佳之電化學活性。較佳地,前述之負載量為不小於1×10 -8mol/cm 2。 In some embodiments, the loading amount of the metal material per unit area in the hole template is not less than 5×10 -9 mol/cm 2 . When the loading amount per unit area of the metal material in the hole template is in the aforementioned range, the metal material is electrodeposited in the nano-holes in the hole template, and has a larger specific surface area than the metal film deposited on the plane. Has better electrochemical activity. Preferably, the aforementioned loading amount is not less than 1×10 -8 mol/cm 2 .
在一些實施例中,金屬材料之活性金屬比例(active metal fraction)為不小於15%。當金屬材料之活性金屬比例為前述之範圍時,可提升所製得之電極的電化學活性。較佳地,前述之活性金屬比例不小於20%。In some embodiments, the active metal fraction of the metal material is not less than 15%. When the active metal ratio of the metal material is in the aforementioned range, the electrochemical activity of the prepared electrode can be improved. Preferably, the aforementioned active metal ratio is not less than 20%.
以下利用實施例以說明本發明之應用,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。The following examples are used to illustrate the application of the present invention, but they are not intended to limit the present invention. Anyone who is familiar with the art can make various changes and modifications without departing from the spirit and scope of the present invention.
金屬有機骨架之製備Preparation of metal organic framework
金屬有機骨架為MOF-808結構之金屬有機骨架,且使用溶劑熱法製得。依序在肥皂水及丙酮中,以超音波清洗FTO基材(氟摻雜氧化錫(fluorine-doped tin oxide),電阻值為7Ω/sq,而面積為3cm×1.25cm)10分鐘。以氮氣吹乾FTO基材後,在室溫下,FTO基材浸泡於10mL的0.5mM均苯三甲酸(H 3BTC)的二甲基甲醯胺(DMF)溶液過夜。然後,在80℃的烘箱中乾燥前述之FTO基材,以獲得處理後之FTO基材。 The metal-organic framework is a metal-organic framework of MOF-808 structure and is prepared by solvothermal method. Wash the FTO substrate (fluorine-doped tin oxide, resistance value 7Ω/sq, and area 3cm×1.25cm) with ultrasonic waves in soapy water and acetone for 10 minutes. After drying the FTO substrate with nitrogen, the FTO substrate was soaked in 10 mL of 0.5 mM trimesic acid (H 3 BTC) in dimethylformamide (DMF) solution overnight at room temperature. Then, the aforementioned FTO substrate was dried in an oven at 80° C. to obtain the treated FTO substrate.
另外,加入27.5mg H 3BTC、40mg八水氧氯化鋯(zirconyl chloride octahydrate)、5mL DMF及5mL甲酸於裝設有尿素蓋與鐵氟龍內襯之20mL螺紋閃爍計數瓶(scintillation vial)中,並以超音波混合5分鐘,以獲得混合溶液。再以導電側朝下的方式,將處理後之FTO基材浸入前述之混合溶液中。接著,密封前述之螺紋閃爍計數瓶,並放置於重力對流烘箱底部,溫度設定於80℃,經歷48小時。金屬有機骨架(以下以MOF-808表示)形成於處理後之FTO基材後,以DMF潤洗金屬有機骨架薄膜三次,以確保完全交換溶劑。再於真空下80℃乾燥後,以製得模板基材(以下以MOF-808/FTO表示),其金屬有機骨架之奈米孔洞的孔徑為1.8nm。 In addition, add 27.5mg H 3 BTC, 40mg zirconyl chloride octahydrate, 5mL DMF and 5mL formic acid to a 20mL scintillation vial equipped with a urea cap and Teflon lining , And mixed with ultrasound for 5 minutes to obtain a mixed solution. Then, with the conductive side facing down, immerse the treated FTO substrate in the aforementioned mixed solution. Next, seal the aforementioned screw scintillation counter bottle and place it at the bottom of a gravity convection oven, set the temperature at 80°C, and go through 48 hours. After the metal organic framework (represented by MOF-808 below) is formed on the treated FTO substrate, the metal organic framework film is rinsed three times with DMF to ensure complete solvent exchange. After drying at 80° C. under vacuum, a template substrate (represented by MOF-808/FTO hereinafter) was prepared, and the pore diameter of the metal-organic framework of the nano-pores was 1.8 nm.
金屬材料及含有其之電極的製備Preparation of metal materials and electrodes containing them
實施例Example
實施例之金屬材料的製備係使用三極式電化學系統進行電沉積,以白金電線做為對電極,且以Ag/AgCl/NaCl(3M)電極(廠牌為BASi)做為參考電極。使用聚醯亞胺電絕緣膠帶調整MOF-808/FTO所曝露出的面積為1cm 2,且以其做為工作電極。此外,以硫酸鈷之鈷離子(II)做為金屬前驅物(水合尺寸為0.21nm),且電解液為20mL的0.05M七水硫酸鈷(cobalt(II) sulfate heptahydrate)的甲醇溶液。 The preparation of the metal material in the embodiment uses a three-pole electrochemical system for electrodeposition, with platinum wires as the counter electrode, and Ag/AgCl/NaCl (3M) electrode (brand name: BASi) as the reference electrode. Use polyimide electrical insulating tape to adjust the exposed area of MOF-808/FTO to 1cm 2 , and use it as the working electrode. In addition, the cobalt ion (II) of cobalt sulfate is used as the metal precursor (with a hydration size of 0.21 nm), and the electrolyte is 20 mL of a methanol solution of 0.05 M cobalt(II) sulfate heptahydrate.
在室溫下,進行脈衝計時電位電沉積。以0.1mA/cm 2的陰極電流通過工作電極,持續10秒,接著暫停10秒。前述之通過與暫停的過程視為一個循環,共經歷200個循環,通過工作電極的單位面積之電量總共為0.2C/cm 2,以電沉積鈷金屬材料於MOF-808之奈米孔洞內。於完成電沉積後,以甲醇潤洗數次,並乾燥工作電極,而製得實施例之鈷金屬材料及包含其之電極(以下以Co@MOF-808/FTO表示)。 At room temperature, pulse chronopotential electrodeposition was performed. Pass the working electrode with a cathode current of 0.1 mA/cm 2 for 10 seconds, and then pause for 10 seconds. The aforementioned passing and suspending process is regarded as one cycle, and it has gone through 200 cycles in total. The total amount of electricity per unit area passing through the working electrode is 0.2C/cm 2 , and the cobalt metal material is electrodeposited in the nano-holes of MOF-808. After the electrodeposition is completed, the working electrode is rinsed with methanol several times, and the working electrode is dried to obtain the cobalt metal material of the embodiment and the electrode containing it (hereinafter referred to as Co@MOF-808/FTO).
比較例1Comparative example 1
比較例1係以與實施例1相同的方法進行鈷金屬之沉積,不同之處在於比較例1未進行MOF-808之生長,而直接電沉積鈷金屬膜於空白的FTO基材上,以製得具有鈷金屬膜的FTO基材(以Co/FTO表示)。In Comparative Example 1, the cobalt metal was deposited by the same method as in Example 1, except that the MOF-808 was not grown in Comparative Example 1, and the cobalt metal film was directly electrodeposited on the blank FTO substrate to prepare The FTO substrate (expressed as Co/FTO) with a cobalt metal film is obtained.
評價方式Evaluation method
1.單位面積的鈷金屬負載量1. Cobalt metal loading per unit area
單位面積的鈷金屬負載量係取經量測過面積之實施例的Co@MOF-808/FTO及比較例1的Co/FTO分別浸入2mL的2M鹽酸水溶液中過夜,以完全溶解二者中的鈷金屬材料。再分別加入5mL的3wt%硝酸水溶液於前述溶解鈷金屬材料的溶液中,以配製二者的樣品溶液。分別以電感耦合電漿體原子發射儀(由Horiba Scientific公司製造,型號為JY 2000-2)量測樣品溶液的電感耦合電漿體原子發射光譜,以獲得樣品溶液中鈷金屬的濃度,並經稀釋比例與前述面積換算後求得電沉積於單位面積之MOF-808中的鈷金屬負載量,其結果詳述於後。The cobalt metal loading amount per unit area is the Co@MOF-808/FTO of the example and the Co/FTO of the comparative example 1 whose area has been measured, respectively, and immersed in 2mL of 2M hydrochloric acid aqueous solution overnight to completely dissolve the cobalt in both metallic material. Then respectively add 5 mL of 3wt% nitric acid aqueous solution to the aforementioned solution for dissolving the cobalt metal material to prepare both sample solutions. The inductively coupled plasma atomic emission spectrometer (manufactured by Horiba Scientific, model JY 2000-2) was used to measure the inductively coupled plasma atomic emission spectra of the sample solution to obtain the concentration of cobalt metal in the sample solution. The dilution ratio is converted to the aforementioned area to obtain the amount of cobalt metal electrodeposited in the MOF-808 per unit area, and the result is described in detail later.
2.活性金屬比例之量測2. Measurement of active metal ratio
活性金屬比例之量測係以實施例之Co@MOF-808/FTO,在0.05M的MOPS緩衝液(pH=7.3)中,電位切換從+0.8V至0.0V(相對於Ag/AgCl/NaCl(3M)),量測電流式J-t曲線(電流密度-時間曲線),並從電流式J-t曲線獲得積分後電量,根據前述之單位面積的鈷金屬負載量,算出實施例之Co@MOF-808/FTO之活性金屬比例,其結果詳述於後。The measurement of the active metal ratio is based on the Co@MOF-808/FTO of the example. In the 0.05M MOPS buffer (pH=7.3), the potential is switched from +0.8V to 0.0V (relative to Ag/AgCl/NaCl (3M)), measure the current-type Jt curve (current density-time curve), and obtain the integrated power from the current-type Jt curve, and calculate the Co@MOF-808 of the embodiment based on the aforementioned cobalt metal load per unit area /FTO ratio of active metal, the results are detailed later.
3.X光繞射圖譜之量測3. Measurement of X-ray diffraction spectrum
X光繞射圖譜之量測係使用X光繞射儀(由布魯克公司製造,型號為D8 Discover)收集MOF-808/FTO及實施例之Co@MOF-808/FTO之繞射圖譜,且使用X-光粉末繞射儀(由Rigaku公司製造,型號為ultima IV)收集粉末狀MOF-808的繞射圖譜,此些繞射圖譜如圖2所示。The X-ray diffraction spectrum is measured by using an X-ray diffractometer (manufactured by Bruker, model D8 Discover) to collect the diffraction spectrum of the MOF-808/FTO and the Co@MOF-808/FTO of the embodiment, and use X-ray powder diffraction spectra (manufactured by Rigaku, model ultima IV) collect the diffraction patterns of powdered MOF-808, and these diffraction patterns are shown in FIG. 2.
4.掃描式電子顯微鏡之影像及能量分散式X光光譜分析4. Scanning electron microscope image and energy dispersive X-ray spectrum analysis
掃描式電子顯微鏡(SEM)之影像及能量分散式X光光譜(EDS)分析係使用掃描式電子顯微鏡(由日立公司製造,型號為SU-8010)對MOF-808/FTO及實施例之Co@MOF-808/FTO進行拍攝與收集數據,其結果如圖3A至3B及4A至4B所示。Scanning electron microscope (SEM) images and energy dispersive X-ray spectroscopy (EDS) analysis were performed using a scanning electron microscope (manufactured by Hitachi, model SU-8010) for MOF-808/FTO and Co@ MOF-808/FTO took pictures and collected data, and the results are shown in Figures 3A to 3B and 4A to 4B.
5.電化學活性之試驗5. Test of electrochemical activity
電化學活性之試驗係使用電化學工作站(由CH儀器公司製造,型號為CHI6273E)進行,其中使用與進行電沉積相同之三極式電化學系統,但是分別以FTO、MOF-808/FTO、比較例1之Co/FTO及實施例之Co@MOF-808/FTO做為工作電極。電解液為0.1M的3-(N-嗎啡啉)丙磺酸(3-(N-morpholino) propanesulfonic acid,MOPS)溶液與0.1M氫氧化鈉溶液共同溶解於去離子水中所製得之緩衝溶液(pH=7.3),且分別於電解液中添加0mM、0.2mM或0.4mMH 2O 2溶液,以循環伏安法(cyclic voltammetry,CV)量測前述四種電極的氧化與還原峰值的電流密度,以評估其電化學活性,其結果如圖5及圖6A至6C所示。 The electrochemical activity test is carried out using an electrochemical workstation (manufactured by CH Instruments, model CHI6273E), which uses the same three-pole electrochemical system as the electrodeposition, but with FTO, MOF-808/FTO, and comparison The Co/FTO of Example 1 and the Co@MOF-808/FTO of Example were used as working electrodes. The electrolyte is a buffer solution prepared by dissolving 0.1M 3-(N-morpholino) propanesulfonic acid (MOPS) solution and 0.1M sodium hydroxide solution in deionized water (pH=7.3), and add 0mM, 0.2mM or 0.4mMH 2 O 2 solution to the electrolyte respectively, and measure the current density of the oxidation and reduction peaks of the aforementioned four electrodes by cyclic voltammetry (CV) , To evaluate its electrochemical activity, the results are shown in Figure 5 and Figures 6A to 6C.
6.電流式偵測H 2O 2之試驗 6. Test of current type detection of H 2 O 2
電流式偵測H 2O 2之試驗係於0.05M的MOPS緩衝液(pH=7.3)中,施加+0.8V電位(相對於Ag/AgCl/NaCl(3M)),以偵測H 2O 2濃度。每間隔100秒依序由低濃度到高濃度加入不同濃度之H 2O 2水溶液,並紀錄回應的電流值,以獲得H 2O 2濃度對電流密度之檢量線圖,其結果詳述於後。 The test of amperometric detection of H 2 O 2 is to apply +0.8V potential (relative to Ag/AgCl/NaCl(3M)) in 0.05M MOPS buffer (pH=7.3) to detect H 2 O 2 concentration. Add H 2 O 2 aqueous solutions of different concentrations from low concentration to high concentration every 100 seconds, and record the response current value to obtain the calibration curve of H 2 O 2 concentration versus current density. The results are detailed in Rear.
先就製造方法而言,根據單位面積的鈷金屬負載量之結果,實施例之Co@MOF-808/FTO的數據為3.5×10 -8mol/cm 2,其高出比較例1之Co/FTO的數據(4.2×10 -9mol/cm 2)一個等級,故MOF-808做為孔洞模板可增加鈷金屬材料的負載量。 First, in terms of the manufacturing method, according to the results of the cobalt metal loading per unit area, the data of Co@MOF-808/FTO in the example is 3.5×10 -8 mol/cm 2 , which is higher than the Co/ in Comparative Example 1. The FTO data (4.2×10 -9 mol/cm 2 ) is one level, so MOF-808 as a hole template can increase the loading of cobalt metal materials.
再者,根據活性金屬比例之結果,實施例之Co@MOF-808/FTO的活性金屬比例為21%,故實施例之脈衝式電流的製造方法所製得之金屬材料具有高活性金屬比例。Furthermore, according to the result of the active metal ratio, the active metal ratio of Co@MOF-808/FTO in the embodiment is 21%, so the metal material produced by the pulse current manufacturing method of the embodiment has a high active metal ratio.
此外,請參閱圖2,其係繪示MOF-808/FTO、實施例之Co@MOF-808/FTO及粉末狀MOF-808之X-光繞射圖譜。MOF-808/FTO及實施例之Co@MOF-808/FTO之繞射峰位在4.4、8.4、8.8、10.0及11.0度,此些繞射峰與粉末狀MOF-808之繞射峰相同。由此可知,MOF-808成功地形成在FTO基材上,且在電沉積鈷金屬材料後,MOF-808的結晶性仍被保留住。In addition, please refer to FIG. 2, which shows the X-ray diffraction spectra of MOF-808/FTO, Co@MOF-808/FTO of the examples, and powdered MOF-808. The diffraction peaks of MOF-808/FTO and Co@MOF-808/FTO of the examples are at 4.4, 8.4, 8.8, 10.0 and 11.0 degrees, and these diffraction peaks are the same as those of powdered MOF-808. It can be seen that MOF-808 was successfully formed on the FTO substrate, and the crystallinity of MOF-808 was still retained after the cobalt metal material was electrodeposited.
其次,請參閱圖3A及3B,此二圖分別為MOF-808/FTO及實施例之Co@MOF-808/FTO的SEM的影像。實施例之Co@MOF-808/FTO仍具有與未經電沉積之MOF-808/FTO的表面相似的形貌(morphology),而無明顯電沉積的鈷粒子覆蓋於MOF-808外表面。Secondly, please refer to FIGS. 3A and 3B, which are respectively the SEM images of MOF-808/FTO and Co@MOF-808/FTO of the embodiment. The Co@MOF-808/FTO of the embodiment still has a morphology similar to the surface of the MOF-808/FTO without electrodeposition, and the outer surface of the MOF-808 is covered by no significant electrodeposited cobalt particles.
再者,請參閱圖4A及4B,此二圖分別為實施例之Co@MOF-808/FTO中之一個MOF-808結晶的橫截面進行鋯與鈷元素分析之EDS線掃描位置及其映射影像。鋯與鈷的分佈於MOF-808結晶的橫截面處為彼此重疊的。因此,從前述X光繞射圖譜、SEM的影像及鋯與鈷元素分析之結果可知,實施例的製造方法可電沉積鈷金屬材料於MOF-808的奈米孔洞內,而非其外表面。Furthermore, please refer to Figures 4A and 4B. These two figures are respectively the cross-section of a MOF-808 crystal in Co@MOF-808/FTO of the embodiment for the EDS line scan position and its mapping image for elemental analysis of zirconium and cobalt. . The distribution of zirconium and cobalt overlap each other at the cross-section of the MOF-808 crystal. Therefore, from the aforementioned X-ray diffraction spectrum, SEM images, and the analysis results of zirconium and cobalt elements, it can be known that the manufacturing method of the embodiment can electrodeposit cobalt metal material in the nano-holes of MOF-808, but not on its outer surface.
請參閱圖5,其繪示於MOPS緩衝溶液(pH=7.3)中量測FTO基材、MOF-808/FTO、比較例1的Co/FTO及實施例之Co@MOF-808/FTO的循環伏安曲線圖。FTO基材及MOF-808/FTO之循環伏安曲線顯示可忽略的電流。比較例1之Co/FTO的循環伏安曲線顯示弱還原氧化峰(此亦出現於後述之圖6B中)在約0.9V處。相較於比較例1之Co/FTO,實施例之Co@MOF-808/FTO的電流密度高出一個等級。故相較於比較例1所製得之平面的鈷金屬鍍膜,藉由多孔性模板(即MOF-808)所製得之鈷金屬材料具有更高的電化學活性。Please refer to Figure 5, which shows the measurement of FTO substrate, MOF-808/FTO, Co/FTO of Comparative Example 1 and Co@MOF-808/FTO of Examples in a MOPS buffer solution (pH=7.3) Voltammetry graph. The cyclic voltammetry curves of FTO substrate and MOF-808/FTO show negligible current. The cyclic voltammetry curve of Co/FTO of Comparative Example 1 shows a weak reduction and oxidation peak (which also appears in Figure 6B described later) at about 0.9V. Compared with the Co/FTO of Comparative Example 1, the current density of Co@MOF-808/FTO of the Example is one level higher. Therefore, compared with the flat cobalt metal coating prepared in Comparative Example 1, the cobalt metal material prepared by the porous template (ie, MOF-808) has higher electrochemical activity.
請參閱圖6A至6C,其分別係繪示使用MOF-808/FTO、比較例1之Co/FTO及實施例之Co@MOF-808/FTO偵測H 2O 2之循環伏安曲線圖,於三圖中分別以箭號的方向表示H 2O 2濃度之增加趨勢。MOF-808/FTO之循環伏安曲線顯示可忽略的電流。相較於比較例1之Co/FTO,實施例之Co@MOF-808/FTO之催化電流密度較大,故實施例的製造方法所製得之Co@MOF-808/FTO對於H 2O 2具有較高的靈敏度,從而具備較佳的偵測應用性。 Please refer to Figures 6A to 6C, which respectively show the cyclic voltammetry curves of MOF-808/FTO, Co/FTO of Comparative Example 1, and Co@MOF-808/FTO of Examples for H 2 O 2 detection. In the three figures, the increasing trend of H 2 O 2 concentration is indicated by the direction of the arrow. The cyclic voltammetry curve of MOF-808/FTO shows negligible current. Compared with the Co/FTO of Comparative Example 1, the catalytic current density of Co@MOF-808/FTO of the examples is higher, so the Co@MOF-808/FTO produced by the manufacturing method of the examples is more effective than H 2 O 2 It has higher sensitivity and better detection applicability.
此外,根據電流式偵測H 2O 2試驗之結果,實施例的製造方法所製得之鈷金屬材料之偵測極限(LOD)(基於訊號對雜訊比為3)為1.3μM,線性範圍為10μM至450μM,且靈敏度為382.27μA/mMcm 2。請參閱表1,相較於文獻中所報導之鈷金屬氧化物基底的材料,實施例的Co@MOF-808/FTO具有較佳之靈敏度。 In addition, according to the results of the amperometric detection H 2 O 2 test, the detection limit (LOD) (based on the signal to noise ratio of 3) of the cobalt metal material prepared by the manufacturing method of the embodiment is 1.3 μM, and the linear range is It is 10 μM to 450 μM, and the sensitivity is 382.27 μA/mMcm 2 . Please refer to Table 1. Compared with the materials of the cobalt metal oxide substrate reported in the literature, the Co@MOF-808/FTO of the embodiment has better sensitivity.
表1
綜上所述,本發明之金屬材料之製造方法係從孔洞模板的底部由下往上開始電沉積金屬材料,且以脈衝電沉積方式避免奈米孔洞內金屬前驅物的濃度不足或過多,以製得被拘限於奈米孔洞內之金屬材料,從而提升所製得之金屬材料的電化學活性,並增加金屬材料之應用性。In summary, the manufacturing method of the metal material of the present invention is to start the electrodeposition of the metal material from the bottom of the hole template from bottom to top, and the pulse electrodeposition method is used to avoid insufficient or excessive concentration of the metal precursors in the nano-holes. The preparation of metal materials confined to the nanopores, thereby enhancing the electrochemical activity of the prepared metal materials, and increasing the applicability of the metal materials.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,在本發明所屬技術領域中任何具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Retouching, therefore, the scope of protection of the present invention shall be subject to the scope of the attached patent application.
100:方法
110,120,130:操作
100:
為了對本發明之實施例及其優點有更完整之理解,現請參照以下之說明並配合相應之圖式。必須強調的是,各種特徵並非依比例描繪且僅係為了圖解目的。相關圖式內容說明如下: 圖1係繪示根據本發明之實施例的金屬材料之製造方法的流程圖。 圖2係繪示MOF-808/FTO、Co@MOF-808/FTO及粉末狀MOF-808之X光繞射圖譜。 圖3A係MOF-808/FTO之SEM的影像。 圖3B係實施例之Co@MOF-808/FTO之SEM的影像。 圖4A係實施例之Co@MOF-808/FTO之一個MOF-808結晶的橫截面所進行EDS線掃描位置之示意圖。 圖4B係圖4A所示之鋯與鈷的元素分析之EDS線掃描之映射影像。 圖5係繪示於MOPS緩衝溶液(pH=7.3)中量測FTO基材、MOF-808/FTO、比較例1的Co/FTO及實施例之Co@MOF-808/FTO的循環伏安曲線圖。 圖6A係繪示使用MOF-808/FTO偵測H 2O 2之循環伏安曲線圖。 圖6B係繪示使用比較例1之Co/FTO偵測H 2O 2之循環伏安曲線圖。 圖6C係繪示使用實施例之Co@MOF-808/FTO偵測H 2O 2之循環伏安曲線圖。 In order to have a more complete understanding of the embodiments of the present invention and their advantages, please refer to the following description and the corresponding drawings. It must be emphasized that the various features are not drawn to scale and are for illustration purposes only. The contents of the related drawings are described as follows: FIG. 1 is a flowchart of a method for manufacturing a metal material according to an embodiment of the present invention. Figure 2 shows the X-ray diffraction spectra of MOF-808/FTO, Co@MOF-808/FTO and powdered MOF-808. Figure 3A is an SEM image of MOF-808/FTO. Figure 3B is an SEM image of Co@MOF-808/FTO of the embodiment. 4A is a schematic diagram of the EDS line scan position of a cross section of a MOF-808 crystal of Co@MOF-808/FTO of the embodiment. Fig. 4B is an EDS line scan mapping image of the elemental analysis of zirconium and cobalt shown in Fig. 4A. Figure 5 shows the cyclic voltammetry curves of FTO substrate, MOF-808/FTO, Co/FTO of Comparative Example 1 and Co@MOF-808/FTO of Examples measured in MOPS buffer solution (pH=7.3) picture. Fig. 6A shows the cyclic voltammetry curve of H 2 O 2 detected by MOF-808/FTO. FIG. 6B is a graph showing the cyclic voltammetry curve of H 2 O 2 detected by Co/FTO of Comparative Example 1. FIG. FIG. 6C shows the cyclic voltammetry curve of Co@MOF-808/FTO for detecting H 2 O 2 of the embodiment.
100:方法 100: method
110,120,130:操作 110, 120, 130: Operation
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