TWI634986B - Copper-covered laminate plate, printed circuit board and using method thereof - Google Patents
Copper-covered laminate plate, printed circuit board and using method thereof Download PDFInfo
- Publication number
- TWI634986B TWI634986B TW103133381A TW103133381A TWI634986B TW I634986 B TWI634986 B TW I634986B TW 103133381 A TW103133381 A TW 103133381A TW 103133381 A TW103133381 A TW 103133381A TW I634986 B TWI634986 B TW I634986B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- copper foil
- polyimide
- less
- clad laminated
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 98
- 239000011889 copper foil Substances 0.000 claims abstract description 88
- 229920001721 polyimide Polymers 0.000 claims abstract description 80
- 239000004642 Polyimide Substances 0.000 claims abstract description 73
- 229920002098 polyfluorene Polymers 0.000 claims abstract description 43
- 150000003949 imides Chemical class 0.000 claims abstract description 28
- 238000009413 insulation Methods 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims description 17
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 105
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 38
- 150000004985 diamines Chemical class 0.000 description 31
- 230000005540 biological transmission Effects 0.000 description 29
- 238000004088 simulation Methods 0.000 description 29
- 239000002253 acid Substances 0.000 description 28
- 239000000243 solution Substances 0.000 description 24
- 239000000539 dimer Substances 0.000 description 23
- 230000003746 surface roughness Effects 0.000 description 23
- 229920005989 resin Polymers 0.000 description 20
- 239000011347 resin Substances 0.000 description 20
- 239000002243 precursor Substances 0.000 description 19
- -1 fluorene imine Chemical class 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000002904 solvent Substances 0.000 description 17
- 150000008065 acid anhydrides Chemical class 0.000 description 15
- 229920005575 poly(amic acid) Polymers 0.000 description 15
- 150000002466 imines Chemical class 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- 230000009477 glass transition Effects 0.000 description 10
- 150000002430 hydrocarbons Chemical group 0.000 description 10
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 229920000106 Liquid crystal polymer Polymers 0.000 description 7
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 7
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 6
- 125000001931 aliphatic group Chemical group 0.000 description 6
- 150000004984 aromatic diamines Chemical class 0.000 description 6
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000002500 effect on skin Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000002365 multiple layer Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 3
- AJYDKROUZBIMLE-UHFFFAOYSA-N 4-[2-[2-[2-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=CC=C(OC=2C=CC(N)=CC=2)C=1C(C)(C)C1=CC=CC=C1OC1=CC=C(N)C=C1 AJYDKROUZBIMLE-UHFFFAOYSA-N 0.000 description 3
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 3
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 125000004427 diamine group Chemical group 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 125000004806 1-methylethylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- QGYPADVOHRLQJM-UHFFFAOYSA-N 4-(4-amino-2-ethenylphenyl)-3-ethenylaniline Chemical group C=CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C=C QGYPADVOHRLQJM-UHFFFAOYSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 2
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 2
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 2
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- IMYZQPCYWPFTAG-UHFFFAOYSA-N Mecamylamine Chemical compound C1CC2C(C)(C)C(NC)(C)C1C2 IMYZQPCYWPFTAG-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 125000002843 carboxylic acid group Chemical group 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000006471 dimerization reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 229920006259 thermoplastic polyimide Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 2
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 2
- CFQZKFWQLAHGSL-FNTYJUCDSA-N (3e,5e,7e,9e,11e,13e,15e,17e)-18-[(3e,5e,7e,9e,11e,13e,15e,17e)-18-[(3e,5e,7e,9e,11e,13e,15e)-octadeca-3,5,7,9,11,13,15,17-octaenoyl]oxyoctadeca-3,5,7,9,11,13,15,17-octaenoyl]oxyoctadeca-3,5,7,9,11,13,15,17-octaenoic acid Chemical compound OC(=O)C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\OC(=O)C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\OC(=O)C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\C=C CFQZKFWQLAHGSL-FNTYJUCDSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- YTCGLFCOUJIOQH-UHFFFAOYSA-N 1,3,4-oxadiazole-2,5-diamine Chemical compound NC1=NN=C(N)O1 YTCGLFCOUJIOQH-UHFFFAOYSA-N 0.000 description 1
- RXVBJUZEFSAYPW-UHFFFAOYSA-N 1,3-diphenylpropane-1,2,3-trione Chemical compound C=1C=CC=CC=1C(=O)C(=O)C(=O)C1=CC=CC=C1 RXVBJUZEFSAYPW-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
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- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- JRHNUZCXXOTJCA-UHFFFAOYSA-N 1-fluoropropane Chemical compound CCCF JRHNUZCXXOTJCA-UHFFFAOYSA-N 0.000 description 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- SDWGBHZZXPDKDZ-UHFFFAOYSA-N 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=C(Cl)C(C(O)=O)=C2C(C(=O)O)=CC(Cl)=C(C(O)=O)C2=C1C(O)=O SDWGBHZZXPDKDZ-UHFFFAOYSA-N 0.000 description 1
- MJAVQHPPPBDYAN-UHFFFAOYSA-N 2,6-dimethylbenzene-1,4-diamine Chemical compound CC1=CC(N)=CC(C)=C1N MJAVQHPPPBDYAN-UHFFFAOYSA-N 0.000 description 1
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 1
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical compound C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- CEPWHUGCPFOBHV-UHFFFAOYSA-N 3-(1-phenylcyclohexa-2,4-dien-1-yl)oxyaniline Chemical group NC=1C=C(OC2(CC=CC=C2)C2=CC=CC=C2)C=CC=1 CEPWHUGCPFOBHV-UHFFFAOYSA-N 0.000 description 1
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 1
- NDXGRHCEHPFUSU-UHFFFAOYSA-N 3-(3-aminophenyl)aniline Chemical group NC1=CC=CC(C=2C=C(N)C=CC=2)=C1 NDXGRHCEHPFUSU-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- YJQRLTCXYNGNSE-UHFFFAOYSA-N 3-(4-phenylphenoxy)aniline Chemical group NC1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC=CC=2)=C1 YJQRLTCXYNGNSE-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- POXPSTWTPRGRDO-UHFFFAOYSA-N 3-[4-(3-aminophenyl)phenyl]aniline Chemical group NC1=CC=CC(C=2C=CC(=CC=2)C=2C=C(N)C=CC=2)=C1 POXPSTWTPRGRDO-UHFFFAOYSA-N 0.000 description 1
- MFTFTIALAXXIMU-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MFTFTIALAXXIMU-UHFFFAOYSA-N 0.000 description 1
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- QGRZMPCVIHBQOE-UHFFFAOYSA-N 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)CC(C)=C2C(C(O)=O)C(C(O)=O)CC(C)=C21 QGRZMPCVIHBQOE-UHFFFAOYSA-N 0.000 description 1
- IBWPRENZRPOZQN-UHFFFAOYSA-N 4-(1-phenylcyclohexa-2,4-dien-1-yl)oxyaniline Chemical group NC1=CC=C(OC2(CC=CC=C2)C2=CC=CC=C2)C=C1 IBWPRENZRPOZQN-UHFFFAOYSA-N 0.000 description 1
- XUBKCXMWPKLPPK-UHFFFAOYSA-N 4-(4-amino-2,6-dimethylphenyl)-3,5-dimethylaniline Chemical group CC1=CC(N)=CC(C)=C1C1=C(C)C=C(N)C=C1C XUBKCXMWPKLPPK-UHFFFAOYSA-N 0.000 description 1
- GPQSJXRIHLUAKX-UHFFFAOYSA-N 4-(4-amino-2-ethylphenyl)-3-ethylaniline Chemical group CCC1=CC(N)=CC=C1C1=CC=C(N)C=C1CC GPQSJXRIHLUAKX-UHFFFAOYSA-N 0.000 description 1
- KEPDHDVZCBKPTD-UHFFFAOYSA-N 4-(4-amino-2-phenylphenyl)-3-phenylaniline Chemical group C=1C=CC=CC=1C1=CC(N)=CC=C1C1=CC=C(N)C=C1C1=CC=CC=C1 KEPDHDVZCBKPTD-UHFFFAOYSA-N 0.000 description 1
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- JSKKUFIMCFTTRV-UHFFFAOYSA-N 4-(4-phenylphenoxy)aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC=CC=2)C=C1 JSKKUFIMCFTTRV-UHFFFAOYSA-N 0.000 description 1
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- LFNFPWYUXXLMGE-UHFFFAOYSA-N 4-[4-[1-[4-(4-aminophenoxy)phenyl]-9H-fluoren-2-yl]phenoxy]aniline Chemical compound NC1=CC=C(OC2=CC=C(C=C2)C2=C(C=3CC4=CC=CC=C4C=3C=C2)C2=CC=C(C=C2)OC2=CC=C(C=C2)N)C=C1 LFNFPWYUXXLMGE-UHFFFAOYSA-N 0.000 description 1
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- PJCCVNKHRXIAHZ-UHFFFAOYSA-N 4-[4-[[4-(4-aminophenoxy)phenyl]methyl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1CC(C=C1)=CC=C1OC1=CC=C(N)C=C1 PJCCVNKHRXIAHZ-UHFFFAOYSA-N 0.000 description 1
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- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 1
- IIEKUGPEYLGWQQ-UHFFFAOYSA-N 5-[4-(4-amino-2-methylpentyl)phenyl]-4-methylpentan-2-amine Chemical compound CC(N)CC(C)CC1=CC=C(CC(C)CC(C)N)C=C1 IIEKUGPEYLGWQQ-UHFFFAOYSA-N 0.000 description 1
- DUZDWKQSIJVSMY-UHFFFAOYSA-N 5-[4-(6-amino-2-methylhexan-2-yl)phenyl]-5-methylhexan-1-amine Chemical compound NCCCCC(C)(C)C1=CC=C(C(C)(C)CCCCN)C=C1 DUZDWKQSIJVSMY-UHFFFAOYSA-N 0.000 description 1
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- AWYXEHQUFCTCAM-UHFFFAOYSA-N 9H-fluorene-1,6,7,9-tetracarboxylic acid Chemical compound C1=C(C(=CC=2C3=CC=CC(=C3C(C1=2)C(=O)O)C(=O)O)C(=O)O)C(=O)O AWYXEHQUFCTCAM-UHFFFAOYSA-N 0.000 description 1
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- 229910052582 BN Inorganic materials 0.000 description 1
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- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 101000729827 Homo sapiens Barrier-to-autointegration factor-like protein Proteins 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
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- QLQXIRYQVQHAIW-UHFFFAOYSA-N NC1=CC=CC=C1.NC1(C=CC(C=C1)=C1C=CC(N)(C=C1)N)N Chemical compound NC1=CC=CC=C1.NC1(C=CC(C=C1)=C1C=CC(N)(C=C1)N)N QLQXIRYQVQHAIW-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 239000004693 Polybenzimidazole Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 101150092391 RSA3 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- IVGQMRORMVIARE-UHFFFAOYSA-N [4-(3-aminophenoxy)phenyl]-phenylmethanone Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(=O)C=2C=CC=CC=2)=C1 IVGQMRORMVIARE-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- MRSWDOKCESOYBI-UHFFFAOYSA-N anthracene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C=C(C(C(=O)O)=C3)C(O)=O)C3=CC2=C1 MRSWDOKCESOYBI-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
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- 238000010924 continuous production Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 230000000447 dimerizing effect Effects 0.000 description 1
- VAYGXNSJCAHWJZ-UHFFFAOYSA-N dimethyl sulfate Chemical compound COS(=O)(=O)OC VAYGXNSJCAHWJZ-UHFFFAOYSA-N 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 235000020778 linoleic acid Nutrition 0.000 description 1
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000000199 molecular distillation Methods 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- CYPCCLLEICQOCV-UHFFFAOYSA-N phenanthrene-1,2,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1 CYPCCLLEICQOCV-UHFFFAOYSA-N 0.000 description 1
- UMSVUULWTOXCQY-UHFFFAOYSA-N phenanthrene-1,2,7,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1C(O)=O UMSVUULWTOXCQY-UHFFFAOYSA-N 0.000 description 1
- RVRYJZTZEUPARA-UHFFFAOYSA-N phenanthrene-1,2,9,10-tetracarboxylic acid Chemical compound C1=CC=C2C(C(O)=O)=C(C(O)=O)C3=C(C(O)=O)C(C(=O)O)=CC=C3C2=C1 RVRYJZTZEUPARA-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- RTHVZRHBNXZKKB-UHFFFAOYSA-N pyrazine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=NC(C(O)=O)=C(C(O)=O)N=C1C(O)=O RTHVZRHBNXZKKB-UHFFFAOYSA-N 0.000 description 1
- MIROPXUFDXCYLG-UHFFFAOYSA-N pyridine-2,5-diamine Chemical compound NC1=CC=C(N)N=C1 MIROPXUFDXCYLG-UHFFFAOYSA-N 0.000 description 1
- YKWDNEXDHDSTCU-UHFFFAOYSA-N pyrrolidine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1NC(C(O)=O)C(C(O)=O)C1C(O)=O YKWDNEXDHDSTCU-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 238000006798 ring closing metathesis reaction Methods 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 235000003441 saturated fatty acids Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- LUEGQDUCMILDOJ-UHFFFAOYSA-N thiophene-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C=1SC(C(O)=O)=C(C(O)=O)C=1C(O)=O LUEGQDUCMILDOJ-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/088—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
本發明提供一種可以應對伴隨著電子設備的小型化、高性能化的高頻化的覆銅積層板、印刷配線板及其使用方法。覆銅積層板具備聚醯亞胺絕緣層、以及在所述聚醯亞胺絕緣層的至少一個面具備銅箔。聚醯亞胺絕緣層的熱線膨脹係數為0ppm/K以上、30ppm/K以下的範圍內,根據數式(i); The present invention provides a copper-clad laminated board, a printed wiring board, and a method of using the same that can cope with the reduction in frequency and high frequency of electronic equipment. The copper-clad laminated board includes a polyimide insulating layer, and a copper foil is provided on at least one side of the polyimide insulating layer. The thermal linear expansion coefficient of the polyimide insulation layer is in the range of 0 ppm / K or more and 30 ppm / K or less, according to formula (i);
而計算的作為表示介電特性的指標的E1值小於0.009。而且,銅箔與所述聚醯亞胺絕緣層接觸的面的平方平均粗糙度(Rq)為0.05μm以上、且小於0.5μm的範圍內。 On the other hand, the E 1 value calculated as an index representing the dielectric characteristics is less than 0.009. The square average roughness (Rq) of the surface of the copper foil in contact with the polyfluorene imide insulating layer is in a range of 0.05 μm or more and less than 0.5 μm .
Description
本發明涉及一種具有聚醯亞胺絕緣層與銅箔層的覆銅積層板、以及將所述覆銅積層板的銅箔層進行配線電路加工的印刷配線板及其使用方法。 The invention relates to a copper-clad laminated board having a polyimide insulating layer and a copper foil layer, and a printed wiring board for processing a copper circuit of the copper-clad laminated board, and a method for using the same.
近年來,隨著電子設備的小型化、輕量化、省空間化的進展,薄且輕量、具有柔性、即便反復彎曲也具有優異的耐久性的柔性印刷配線板(FPC;Flexible Printed Circuits)的需求增大。FPC在有限的空間內也可以實現立體且高密度的安裝,因此例如在硬碟驅動器(Hard Disk Drive,HDD)、數位視頻光碟(Digital Video Disc,DVD)、手機等電子設備的可動部分的配線、或電纜、連接器等零件中,其用途不斷擴大。 In recent years, with the progress of miniaturization, weight reduction, and space saving of electronic equipment, thin and lightweight flexible printed wiring boards (FPC; Flexible Printed Circuits) having flexibility and excellent durability even after repeated bending Demand is increasing. FPC can also achieve stereo and high-density installation in a limited space. Therefore, for example, the wiring of the movable part of electronic devices such as hard disk drives (HDD), digital video discs (DVD), and mobile phones , Or cables, connectors and other parts, its use is constantly expanding.
除了所述的高密度化,設備的高性能化也取得進展,因此也要求應對傳輸信號的高頻化。在信息處理或信息通信中,為了大容量信息的傳輸、處理,而進行提高傳輸頻率的配合,印刷基板材料要求降低因絕緣層的薄化與絕緣層的低介電化帶來的傳輸損失。使用以前的聚醯亞胺的FPC,由於聚醯亞胺的介電常數 或介電正切高,在高頻區域的傳輸損失高,因此難以應對高頻化。因此,至今為止,為了應對高頻化,而主要使用以低介電常數、低介電正切為特徵的將液晶聚合物作為介電體層的FPC。然而,液晶聚合物雖然介電特性優異,但是在耐熱性或與金屬箔的黏接性上有改善的餘地。 In addition to the above-mentioned high-density, high-performance equipment has also progressed, and therefore, it is required to cope with high-frequency transmission signals. In information processing or information communication, for the transmission and processing of large-capacity information, in order to increase the transmission frequency, the printed circuit board material is required to reduce the transmission loss caused by the thinning of the insulating layer and the low dielectricity of the insulating layer. FPC using previous polyimide due to the dielectric constant of polyimide Or, the dielectric tangent is high, and the transmission loss in the high-frequency region is high. Therefore, it is difficult to cope with the high-frequency. Therefore, in order to cope with high frequency, FPCs having a liquid crystal polymer as a dielectric layer, which is characterized by a low dielectric constant and a low dielectric tangent, have been mainly used. However, although the liquid crystal polymer has excellent dielectric properties, there is room for improvement in heat resistance or adhesion to a metal foil.
為了改善耐熱性或黏接性,而提出將聚醯亞胺製成絕緣層的覆金屬積層體(專利文獻1)。根據專利文獻1已知,通常藉由高分子材料的單體使用脂肪族系單體而介電常數降低,但使用脂肪族(鏈狀)四羧酸二酐而得的聚醯亞胺的耐熱性明顯低,因此無法用於焊接等加工,在實用上存在問題。另外,在專利文獻1中,若使用脂環族四羧酸二酐,則與鏈狀脂肪族四羧酸二酐相比,可以獲得耐熱性提高的聚醯亞胺。然而,此種聚醯亞胺膜雖然在10GHz時的介電常數為3.2以下,但介電正切超過0.01,介電特性仍不充分。 In order to improve heat resistance or adhesiveness, a metal-clad laminate including polyfluorene imide as an insulating layer has been proposed (Patent Document 1). According to Patent Document 1, it is known that a dielectric constant is generally reduced by using an aliphatic monomer as a monomer of a polymer material, but a polyimide obtained by using an aliphatic (chain-like) tetracarboxylic dianhydride has heat resistance. The properties are obviously low, so it cannot be used for processing such as welding, which has practical problems. In addition, in Patent Document 1, when an alicyclic tetracarboxylic dianhydride is used, a polyimide having improved heat resistance can be obtained as compared with a linear aliphatic tetracarboxylic dianhydride. However, the dielectric constant of such a polyfluorene film at 10 GHz is 3.2 or less, but the dielectric tangent exceeds 0.01, and the dielectric characteristics are still insufficient.
為了改善介電特性,而提出控制了與形成導體電路的銅箔接觸的聚醯亞胺層的醯亞胺基濃度的覆銅積層板(專利文獻2)。根據專利文獻2,藉由銅箔的表面粗糙度Rz及與銅箔接觸的面的低醯亞胺基濃度的聚醯亞胺層的組合,而可以控制介電特性,但所述控制存在極限,傳輸特性也無法充分滿足。 In order to improve the dielectric characteristics, a copper-clad laminated board has been proposed in which the concentration of the fluorene imine group of the polyfluorene layer which is in contact with the copper foil forming the conductor circuit is controlled (Patent Document 2). According to Patent Document 2, the dielectric characteristics can be controlled by a combination of the surface roughness Rz of the copper foil and the polyimide layer having a low fluorene imine concentration on the surface in contact with the copper foil, but there is a limit to the control , Transmission characteristics can not be fully met.
[現有技術文獻] [Prior Art Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利特開2004-358961號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2004-358961
[專利文獻2]日本專利第5031639號公報 [Patent Document 2] Japanese Patent No. 5031639
本發明在於提供一種可以應對伴隨著電子設備的小型化、高性能化的高頻化的覆銅積層板、印刷配線板及其使用方法。 The present invention is to provide a copper-clad laminated board, a printed wiring board, and a method of using the same that can cope with the high-frequency increase associated with miniaturization and high performance of electronic equipment.
為了解決所述課題,本發明者等人著眼於銅箔的表皮效應(Skin Effect)而發現,藉由使用具有特定表面狀態的銅箔作為導體層,並且絕緣層使用具有特定介電特性的聚醯亞胺,而可以獲得高頻區域中的傳輸特性優異的FPC等電路基板,從而完成了本發明。 In order to solve the problem, the present inventors focused on the Skin Effect of copper foil and found that by using a copper foil having a specific surface state as a conductor layer and an insulating layer using a polymer having specific dielectric characteristics It is possible to obtain a circuit board such as FPC, which has excellent transmission characteristics in the high-frequency region, by using imine, thereby completing the present invention.
即,本發明的覆銅積層板具備聚醯亞胺絕緣層、及在所述聚醯亞胺絕緣層的至少一個面具備銅箔。本發明的覆銅積層板中,所述聚醯亞胺絕緣層具備:下述構成Ia及Ib:Ia)熱線膨脹係數為0ppm/K以上、30ppm/K以下的範圍內;Ib)根據下述數式(i)、
[此處,ε 1表示藉由空腔共振器微擾法(Cavity Resonator Perturbation Method)的3GHz時的介電常數,Tan δ 1表示藉由空腔共振器微擾法的3GHz時的介電正切(Dielectric Tangent)] [Here, ε 1 represents the dielectric constant at 3 GHz by the Cavity Resonator Perturbation Method, and Tan δ 1 represents the dielectric tangent at 3 GHz by the Cavity Resonator Perturbation Method. (Dielectric Tangent)]
而計算的作為表示介電特性的指標的E1值小於0.009;而且,所述銅箔具備:下述構成c:c)與所述聚醯亞胺絕緣層接觸的面的平方平均粗糙度(Rq)為0.05μm以上、且小於0.5μm的範圍內。 The E 1 value calculated as an index indicating the dielectric characteristics is less than 0.009; and the copper foil includes the following configuration c: c) a square average roughness of a surface in contact with the polyfluorene imide insulating layer ( Rq) is in a range of 0.05 μm or more and less than 0.5 μm .
本發明的覆銅積層板中,所述介電常數可以為3.1以下,所述介電正切可以小於0.005。 In the copper-clad laminated board of the present invention, the dielectric constant may be 3.1 or less, and the dielectric tangent may be less than 0.005.
本發明的覆銅積層板中,所述銅箔的與所述聚醯亞胺絕緣層接觸的面的算術平均高度(Ra)可以為0.2μm以下。 In the copper-clad laminated board of the present invention, an arithmetic average height (Ra) of a surface of the copper foil in contact with the polyfluorene imide insulating layer may be 0.2 μm or less.
本發明的覆銅積層板中,所述銅箔的與所述聚醯亞胺絕緣層接觸的面的十點平均粗糙度(Rz)可以為1.5μm以下。 In the copper-clad laminated board of the present invention, a ten-point average roughness (Rz) of a surface of the copper foil that is in contact with the polyfluorene imide insulating layer may be 1.5 μm or less.
本發明的覆銅積層板中,所述聚醯亞胺絕緣層在10GHz時的介電常數可以為3.0以下,介電正切可以為0.005以下。 In the copper-clad laminated board of the present invention, the dielectric constant of the polyfluorene imide insulating layer at 10 GHz may be 3.0 or less, and the dielectric tangent may be 0.005 or less.
本發明的印刷配線板是將所述任一種覆銅積層板的銅箔進行配線電路加工而成。 The printed wiring board of the present invention is obtained by processing a copper foil of any of the copper-clad laminated boards as described above.
本發明的印刷配線板的使用方法優選在1GHz~40GHz的範圍內的頻率區域內使用所述印刷配線板,更優選在1GHz~20GHz的範圍內的頻率區域內使用。 The method of using the printed wiring board of the present invention is preferably used in a frequency region in a range of 1 GHz to 40 GHz, and more preferably used in a frequency region in a range of 1 GHz to 20 GHz.
本發明的覆銅積層板藉由抑制因銅箔的表皮效應引起的電阻的增大,而可以有效利用聚醯亞胺絕緣層的介電特性,因此可以適合用作需要高速信號傳輸的電子材料。 The copper-clad laminated board of the present invention can effectively utilize the dielectric properties of the polyimide insulation layer by suppressing the increase in resistance caused by the skin effect of the copper foil, and thus can be suitably used as an electronic material requiring high-speed signal transmission .
圖1是表示實施例1及參考例1~參考例3的結果的圖表。 FIG. 1 is a graph showing the results of Example 1 and Reference Examples 1 to 3.
圖2是表示仿真(1)~仿真(6)的結果的圖表。 FIG. 2 is a graph showing the results of simulation (1) to simulation (6).
圖3是表示仿真(7)~仿真(12)的結果的圖表。 FIG. 3 is a graph showing the results of simulation (7) to simulation (12).
以下,對本發明的實施形態進行說明。 Hereinafter, embodiments of the present invention will be described.
〈覆銅積層板〉 <Copper clad laminate>
本實施形態的覆銅積層板是具備聚醯亞胺絕緣層、及在所述聚醯亞胺絕緣層的至少一個面具備銅箔層的覆銅積層板,且也可以是僅在聚醯亞胺絕緣層的單面側具備銅箔的單面覆銅積層板,還可以是在聚醯亞胺絕緣層的兩側具備銅箔的兩面覆銅積層板。另外,兩面覆銅積層板例如可以藉由以下方式獲得:在形成單面覆銅積層板後,使聚醯亞胺絕緣層相互相向藉由熱壓製進行壓接而形成;或者在單面覆銅積層板的聚醯亞胺絕緣層上壓接銅箔而形成等。 The copper-clad laminated board according to this embodiment is a copper-clad laminated board provided with a polyimide insulating layer and a copper foil layer provided on at least one side of the polyimide insulating layer. The single-sided copper-clad laminated board including copper foil on one side of the amine insulating layer may be a double-sided copper-clad laminated board including copper foil on both sides of the polyimide insulating layer. In addition, the double-sided copper-clad laminated board can be obtained by, for example, forming a single-sided copper-clad laminated board, and forming the polyimide insulation layers facing each other by hot pressing and crimping, or copper-clad on one side. A copper foil is laminated on the polyimide insulation layer of the laminated board, and the like is formed.
〈聚醯亞胺絕緣層〉 <Polyimide insulation layer>
形成聚醯亞胺樹脂層的聚醯亞胺包括所謂的聚醯亞胺,且有:聚醯胺醯亞胺、聚苯并咪唑、聚醯亞胺酯、聚醚醯亞胺、聚矽氧烷醯亞胺等在結構中具有醯亞胺基的耐熱性樹脂。 The polyimide forming the polyimide resin layer includes so-called polyimide, and includes: polyimide, polybenzimidazole, polyimide, polyetherimide, polysiloxane A heat-resistant resin having a fluorene imine group in the structure, such as an alkylimide.
聚醯亞胺絕緣層的熱線膨脹係數為0ppm/K~30ppm/K的範圍內,藉由控制在此種範圍內,而可以抑制形成覆銅積層板時的翹曲或尺寸穩定性的降低。另外,聚醯亞胺絕緣層具有單層或多層的聚醯亞胺層,但低熱膨脹性的聚醯亞胺層適合用作基礎 膜層(絕緣樹脂層的主層)。具體而言,若將熱線膨脹係數為1×10-6(1/K)~30×10-6(1/K)的範圍內、優選為1×10-6(1/K)~25×10-6(1/K)的範圍內、更優選為15×10-6(1/K)~25×10-6(1/K)的範圍內的低熱膨脹性的聚醯亞胺層應用於基礎膜層,則可以獲得大的效果。另一方面,超過所述熱線膨脹係數的聚醯亞胺層也適合用作與銅箔層的黏接層。可以適合用作此種黏接性聚醯亞胺層的聚醯亞胺,優選其玻璃轉移溫度例如為350℃以下的聚醯亞胺,更優選其玻璃轉移溫度為200℃~320℃的範圍內的聚醯亞胺。 The thermal linear expansion coefficient of the polyfluorene imide insulating layer is in the range of 0 ppm / K to 30 ppm / K. By controlling within this range, warpage or reduction in dimensional stability when forming a copper-clad laminate can be suppressed. In addition, the polyimide insulating layer has a single or multiple polyimide layers, but a low thermal expansion polyimide layer is suitable as a base film layer (the main layer of the insulating resin layer). Specifically, if the thermal linear expansion coefficient is in the range of 1 × 10 -6 (1 / K) to 30 × 10 -6 (1 / K), it is preferably 1 × 10 -6 (1 / K) to 25 × Application of low thermal expansion polyimide layer in the range of 10 -6 (1 / K), more preferably in the range of 15 × 10 -6 (1 / K) to 25 × 10 -6 (1 / K) For the base film layer, a large effect can be obtained. On the other hand, a polyimide layer exceeding the thermal linear expansion coefficient is also suitable for use as an adhesive layer with a copper foil layer. Polyimide that can be suitably used as such an adhesive polyimide layer is preferably polyimide whose glass transition temperature is, for example, 350 ° C or lower, and more preferably whose glass transition temperature is in the range of 200 ° C to 320 ° C Polyimide inside.
聚醯亞胺絕緣層的厚度例如可以為6μm~50μm的範圍內,優選可為9μm~45μm的範圍內。若聚醯亞胺絕緣層的厚度小於6μm,則有在覆銅積層板的製造等中的搬送時產生出現皺褶等的異常的擔憂,另一方面,若聚醯亞胺絕緣層的厚度超過50μm,則有在覆銅積層板的製造時的尺寸穩定性或彎曲性等中產生問題的擔憂。另外,在由多個聚醯亞胺層形成聚醯亞胺絕緣層時,只要使其合計的厚度為所述範圍內即可。 The thickness of the polyfluorene imide insulating layer may be, for example, in a range of 6 μm to 50 μm , and preferably in a range of 9 μm to 45 μm . If the thickness of the polyimide insulation layer is less than 6 μm , there may be an abnormality such as wrinkles during transportation during the manufacture of a copper-clad laminated board. On the other hand, if the polyimide insulation layer has When the thickness exceeds 50 μm , there is a concern that problems may occur in the dimensional stability and bendability at the time of manufacturing the copper-clad laminated board. In addition, when forming a polyfluorene imide insulating layer from a plurality of polyfluorene imide layers, the total thickness may be within the above range.
(介電特性) (Dielectric properties)
聚醯亞胺絕緣層為了確保用於柔性電路基板(以下有時記為“FPC”)等電路基板時的高頻區域中的傳輸特性,作為絕緣樹脂層整體,根據所述式(i)而計算的作為表示藉由空腔共振器微擾法的3GHz時的介電特性的指標的E1值小於0.009,優選可為0.0025~0.007的範圍內,更優選可為0.0025~0.006的範圍內。若E1值超過所述上限,則在用於FPC等電路基板時,容易在高頻 信號的傳輸路徑上產生電信號的損失等異常。 The polyimide insulating layer is used as a whole of the insulating resin layer in order to ensure transmission characteristics in a high frequency region when used for a circuit board such as a flexible circuit board (hereinafter sometimes referred to as "FPC"). E as represented by the calculated index dielectric characteristics at 3GHz cavity resonator perturbation method a value of less than 0.009, preferably in the range of 0.0025 to 0.007, more preferably in the range of 0.0025 to 0.006. When the value of E 1 exceeds the upper limit, when used for a circuit board such as an FPC, an abnormality such as a loss of an electric signal is likely to occur on a transmission path of a high-frequency signal.
(介電常數及介電正切) (Dielectric Constant and Dielectric Tangent)
聚醯亞胺絕緣層為了在用於FPC等電路基板時,在1GHz~40GHz區域,設定與使用液晶聚合物而製作的覆銅積層板同等水準的傳輸損失,3GHz時的介電常數(ε 1)優選可為3.1以下,介電正切(Tan δ 1)優選可設為小於0.005。若聚醯亞胺絕緣層在3GHz時的介電常數超過3.1,介電正切為0.005以上,則在用於FPC等電路基板時,容易產生電信號的損失的異常。 Polyimide insulation layer is used to set the transmission loss of the same level as the copper-clad laminated board made of liquid crystal polymer in the 1GHz to 40GHz region when used for circuit boards such as FPC. The dielectric constant at 3GHz ( ε 1 ) Is preferably 3.1 or less, and the dielectric tangent (Tan δ 1 ) is preferably less than 0.005. If the dielectric constant of the polyfluorene imide layer at 3.1 GHz exceeds 3.1, and the dielectric tangent is 0.005 or more, it is easy to cause abnormalities in the loss of electrical signals when used for circuit boards such as FPC.
另外,聚醯亞胺絕緣層為了在用於FPC等電路基板時,使傳輸損失降低至與液晶聚合物同等水準,優選3GHz時的介電正切小於0.005。若聚醯亞胺絕緣層在3GHz時的介電正切為0.005以上,則在用於FPC等電路基板時,會在高頻信號的傳輸路徑上產生電信號的損失。 In addition, in order to reduce the transmission loss to a level equivalent to that of a liquid crystal polymer when the polyfluorene imide insulating layer is used in a circuit board such as an FPC, the dielectric tangent at 3 GHz is preferably less than 0.005. If the dielectric tangent of the polyfluorene imide layer at 3 GHz is 0.005 or more, when it is used in a circuit board such as an FPC, an electrical signal loss will occur in the transmission path of a high-frequency signal.
而且,聚醯亞胺絕緣層為了在用於FPC等電路基板時,使傳輸損失降低至與液晶聚合物同等水準,10GHz時的介電常數優選可為3.0以下,介電正切可為0.005以下。藉由將聚醯亞胺絕緣層的介電特性控制在此種範圍內,而在用於FPC等電路基板時的高頻信號的傳輸路徑上可以抑制傳輸損失。 In addition, in order to reduce the transmission loss to a level equivalent to that of a liquid crystal polymer when used for a circuit board such as FPC, the polyimide insulation layer preferably has a dielectric constant at 3.0 GHz of 3.0 or less and a dielectric tangent of 0.005 or less. By controlling the dielectric characteristics of the polyfluorene imide insulation layer within such a range, transmission loss can be suppressed on the transmission path of high-frequency signals when used for circuit boards such as FPC.
從聚醯亞胺絕緣層的厚度或物性的控制的容易性來看,優選在將聚醯胺酸溶液直接塗佈於銅箔上後,藉由熱處理進行乾燥、硬化的利用所謂澆鑄(塗佈)法而得的聚醯亞胺絕緣層。另外,在將聚醯亞胺絕緣層設為多層時,可以在包含不同的構成 成分的聚醯胺酸溶液上依序塗佈其他聚醯胺酸溶液而形成。在聚醯亞胺絕緣層包含多層時,可以使用2次以上的相同構成的聚醯亞胺前驅物樹脂。 From the viewpoint of the ease of controlling the thickness or physical properties of the polyimide insulation layer, it is preferable to use a so-called casting (coating) method in which a polyamic acid solution is directly coated on a copper foil and then dried and hardened by heat treatment ) Polyimide insulation layer obtained by the method. In addition, when a polyimide insulation layer is provided in multiple layers, different configurations may be included. The polyamino acid solution of the component is formed by sequentially coating another polyamino acid solution. When the polyfluorene imide insulating layer includes a plurality of layers, a polyfluorene imide precursor resin having the same constitution may be used more than twice.
為了形成聚醯亞胺絕緣層,特別適合的聚醯亞胺是使包含芳香族四羧酸酐的酸酐成分、與含有二聚物酸的二個末端羧酸基被一級氨基甲基或氨基取代而成的二聚物酸型二胺及芳香族二胺的二胺成分反應而得的聚醯亞胺,且相對於全部二胺成分,所述二聚物酸型二胺優選為4莫耳%~40莫耳%的範圍內。 In order to form a polyfluorene imide insulation layer, a polyfluorene imide is particularly suitable in which an acid anhydride component containing an aromatic tetracarboxylic anhydride and two terminal carboxylic acid groups containing a dimer acid are substituted with a primary aminomethyl group or an amino group. The polyimide obtained by reacting the dimer acid-type diamine with the diamine component of the aromatic diamine, and the dimer acid-type diamine is preferably 4 mol% relative to all the diamine components. In the range of ~ 40 mole%.
此種聚醯亞胺優選具有下述通式(1)及通式(2)所示的結構單元的聚醯亞胺。 Such a polyfluorene imine is preferably a polyfluorene imine having a structural unit represented by the following general formula (1) and general formula (2).
[式中,Ar表示由芳香族四羧酸酐衍生的4價芳香族基,R1表示由二聚物酸型二胺衍生的2價二聚物酸型二胺殘基,R2表示 由芳香族二胺衍生的2價芳香族二胺殘基,m、n表示各構成單元的存在莫耳比,m為0.04~0.4的範圍內、n為0.6~0.96的範圍內。] [In the formula, Ar represents a tetravalent aromatic group derived from an aromatic tetracarboxylic anhydride, R 1 represents a divalent acid diamine residue derived from a dimer acid diamine, and R 2 represents an aromatic diamine residue. A divalent aromatic diamine residue derived from a group diamine, m and n represent the presence of mole ratio of each constituent unit, m is in the range of 0.04 to 0.4, and n is in the range of 0.6 to 0.96. ]
基團Ar例如可以列舉下述式(3)或式(4)所示的基團。 Examples of the group Ar include a group represented by the following formula (3) or formula (4).
[式中,W表示單鍵、選自碳數1~15的2價烴基、-O-、-S-、-CO-、-SO-、-SO2-、-NH-或-CONH-的2價基團] [Wherein W represents a single bond, a divalent hydrocarbon group selected from 1 to 15 carbon atoms, -O-, -S-, -CO-, -SO-, -SO 2- , -NH-, or -CONH- Divalent group]
特別是從減少聚醯亞胺的極性基、提高介電特性的觀點來看,基團Ar優選式(3)、或式(4)中的W由單鍵、碳數1~15的2價烴基、-O-、-S-、-CO-表示的基團,更優選式(3)、或式(4)中的W由單鍵、碳數1~15的2價烴基、-CO-表示的基團。 Especially from the viewpoint of reducing the polar group of polyfluoreneimide and improving the dielectric properties, the group Ar is preferably a valence of W in formula (3) or formula (4) having a single bond and a carbon number of 1 to 15 A hydrocarbon group, a group represented by -O-, -S-, -CO-, more preferably W in formula (3) or formula (4) is a single bond, a divalent hydrocarbon group having 1 to 15 carbon atoms, -CO- Represented groups.
另外,所述通式(1)及通式(2)所示的構成單元可以存在於均聚物中,也能作為共聚物的構成單元存在。在為具有多個構成單元的共聚物時,能作為嵌段共聚物存在,也能作為無規共聚物存在。 In addition, the structural unit represented by the general formula (1) and the general formula (2) may exist in a homopolymer, and may also exist as a structural unit of a copolymer. When it is a copolymer having a plurality of constituent units, it can exist as a block copolymer or as a random copolymer.
聚醯亞胺通常使酸酐與二胺反應而製造,因此藉由說明酸酐與二胺,來理解聚醯亞胺的具體例。在所述通式(1)及通式(2)中,基團Ar可以是指酸酐的殘基,基團R1及基團R2可以 是指二胺的殘基,因此藉由酸酐與二胺來說明優選的聚醯亞胺。 Polyfluorene imine is generally produced by reacting an acid anhydride and a diamine. Therefore, a specific example of a polyfluorene imine is understood by explaining an acid anhydride and a diamine. In the general formulae (1) and (2), the group Ar may refer to a residue of an acid anhydride, and the groups R 1 and R 2 may refer to a residue of a diamine. Diamine to illustrate the preferred polyfluorene imine.
具有基團Ar作為殘基的酸酐例如優選例示:均苯四甲酸酐、3,3',4,4'-聯苯四甲酸二酐、3,3',4,4'-二苯基碸四甲酸二酐、4,4'-氧二鄰苯二甲酸酐。另外,酸酐例如可以列舉:2,2',3,3'-二苯甲酮四甲酸二酐、2,3,3',4'-二苯甲酮四甲酸二酐或3,3',4,4'-二苯甲酮四甲酸二酐、2,3',3,4'-聯苯四甲酸二酐、2,2',3,3'-聯苯四甲酸二酐、2,3',3,4'-二苯醚四甲酸二酐、雙(2,3-二羧基苯基)醚二酐、3,3",4,4"-對聯三苯四甲酸二酐、2,3,3",4"-對聯三苯四甲酸二酐或2,2",3,3"-對聯三苯四甲酸二酐、2,2-雙(2,3-或3,4-二羧基苯基)-丙烷二酐、雙(2,3-或3,4-二羧基苯基)甲烷二酐、雙(2,3-或3,4-二羧基苯基)碸二酐、1,1-雙(2,3-或3,4-二羧基苯基)乙烷二酐、1,2,7,8-菲-四甲酸二酐、1,2,6,7-菲-四甲酸二酐或1,2,9,10-菲-四甲酸二酐、2,3,6,7-蒽四甲酸二酐、2,2-雙(3,4-二羧基苯基)四氟丙烷二酐、2,3,5,6-環己烷二酐、2,3,6,7-萘四甲酸二酐、1,2,5,6-萘四甲酸二酐、1,4,5,8-萘四甲酸二酐、4,8-二甲基-1,2,3,5,6,7-六氫萘-1,2,5,6-四甲酸二酐、2,6-二氯萘-1,4,5,8-四甲酸二酐或2,7-二氯萘-1,4,5,8-四甲酸二酐、2,3,6,7-(或1,4,5,8-)四氯萘-1,4,5,8-(或2,3,6,7-)四甲酸二酐、2,3,8,9-苝-四甲酸二酐、3,4,9,10-苝-四甲酸二酐、4,5,10,11-苝-四甲酸二酐或5,6,11,12-苝-四甲酸二酐、環戊烷-1,2,3,4-四甲酸二酐、吡嗪-2,3,5,6-四甲酸二酐、吡咯烷-2,3,4,5-四甲酸二酐、噻吩-2,3,4,5-四甲酸二酐、4,4'-雙(2,3-二羧基苯氧基)二苯基甲烷二酐等。 Preferred examples of the acid anhydride having a group Ar as a residue include pyromellitic anhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 3,3', 4,4'-diphenylfluorene. Tetracarboxylic dianhydride, 4,4'-oxydiphthalic anhydride. Examples of the acid anhydride include 2,2 ', 3,3'-benzophenonetetracarboxylic dianhydride, 2,3,3', 4'-benzophenonetetracarboxylic dianhydride, or 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride, 2,3 ', 3,4'-biphenyltetracarboxylic dianhydride, 2,2', 3,3'-biphenyltetracarboxylic dianhydride, 2, 3 ', 3,4'-Diphenylethertetracarboxylic dianhydride, bis (2,3-dicarboxyphenyl) ether dianhydride, 3,3 ", 4,4" -terphenyltriphenyltetracarboxylic dianhydride, 2 , 3,3 ", 4" -terephthalate dianhydride or 2,2 ", 3,3" -terephthalate dianhydride, 2,2-bis (2,3- or 3,4- Dicarboxyphenyl) -propane dianhydride, bis (2,3- or 3,4-dicarboxyphenyl) methane dianhydride, bis (2,3- or 3,4-dicarboxyphenyl) fluorene dianhydride, 1,1-bis (2,3- or 3,4-dicarboxyphenyl) ethane dianhydride, 1,2,7,8-phenanthrene-tetracarboxylic dianhydride, 1,2,6,7-phenanthrene- Tetracarboxylic dianhydride or 1,2,9,10-phenanthrene-tetracarboxylic dianhydride, 2,3,6,7-anthracene tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) tetracarboxylic acid Fluoropropane dianhydride, 2,3,5,6-cyclohexane dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4 , 5,8-naphthalenetetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, 2, 6-Dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride or 2,7-di Naphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7- (or 1,4,5,8-) tetrachloronaphthalene-1,4,5,8- (or 2, 3,6,7-) tetracarboxylic dianhydride, 2,3,8,9-fluorene-tetracarboxylic dianhydride, 3,4,9,10-fluorene-tetracarboxylic dianhydride, 4,5,10,11- Hydrazone-tetracarboxylic dianhydride or 5,6,11,12-fluorene-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrazine-2,3,5,6- Tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, thiophene-2,3,4,5-tetracarboxylic dianhydride, 4,4'-bis (2,3-dicarboxybenzene (Oxy) diphenylmethane dianhydride and the like.
基團R1為由二聚物酸型二胺衍生的2價二聚物酸型二胺殘基。所謂二聚物酸型二胺,是指二聚物酸的二個末端羧酸基(-COOH)被一級氨基甲基(-CH2-NH2)或氨基(-NH2)取代而成的二胺。 By the radicals R 1 derived from a dimer acid type diamine bivalent dimer acid type diamine residue. The so-called dimer acid type diamine refers to the substitution of two terminal carboxylic acid groups (-COOH) of a dimer acid with a primary aminomethyl group (-CH 2 -NH 2 ) or an amino group (-NH 2 ). Diamine.
二聚物酸是藉由不飽和脂肪酸的分子間聚合反應而得的已知的二元酸,其工業製造製程在業界基本上已標準化,藉由黏土催化劑等將碳數為11~22的不飽和脂肪酸二聚化而得。工業上所得的二聚物酸主成分是:藉由將油酸或亞麻油酸等碳數為18的不飽和脂肪酸二聚化而得的碳數為36的二元酸,根據純化的程度,而含有任意量的單體酸(碳數18)、三聚物酸(碳數54)、碳數20~54的其他聚合脂肪酸。在本發明中,二聚物酸優選使用:藉由分子蒸餾將二聚物酸含量提高至90重量%以上的二聚物酸。另外,在二聚物化反應後殘存雙鍵,但在本發明中,進一步進行氫化反應而降低不飽和度者也包括在二聚物酸中。 Dimer acid is a known dibasic acid obtained by the intermolecular polymerization of unsaturated fatty acids. Its industrial manufacturing process has been basically standardized in the industry. Obtained from dimerization of saturated fatty acids. The main component of the dimer acid obtained industrially is a dibasic acid with a carbon number of 36 obtained by dimerizing an unsaturated fatty acid with a carbon number of 18 such as oleic acid or linoleic acid. Depending on the degree of purification, In addition, it contains any amount of monomeric acid (18 carbons), trimer acid (54 carbons), and other polymerized fatty acids with 20 to 54 carbons. In the present invention, a dimer acid is preferably used: a dimer acid whose molecular content is increased to 90% by weight or more by molecular distillation. In addition, a double bond remains after the dimerization reaction, but in the present invention, a hydrogenation reaction is further performed to reduce the degree of unsaturation is also included in the dimer acid.
作為二聚物酸型二胺的特徵,可以賦予源自二聚物酸的骨架的特性。即,二聚物酸型二胺由於是分子量約560~620的巨大分子的脂肪族,因此可以增大分子的莫耳體積,並相對減少聚醯亞胺的極性基。此種二聚物酸型二胺的特徵認為會抑制聚醯亞胺的耐熱性的降低,且有助於提高介電特性。另外,由於具有2個自由移動的碳數7~9的疏水鏈、以及具有接近碳數18的長度的2個鏈狀脂肪族氨基,因此不僅對聚醯亞胺提供柔軟性,而且可以將聚醯亞胺形成為非對稱性化學結構或非平面性化學結構, 因此認為可以謀求聚醯亞胺的低介電常數化。 As a characteristic of a dimer acid type diamine, the characteristic derived from the skeleton of a dimer acid can be provided. That is, since the dimer acid-type diamine is an aliphatic of a huge molecule having a molecular weight of about 560 to 620, it is possible to increase the molar volume of the molecule and relatively reduce the polar group of polyimide. Such a dimer acid-type diamine is considered to be characteristic of suppressing a decrease in heat resistance of polyfluorene imine and contributing to improvement of dielectric properties. In addition, since it has two freely moving hydrophobic chains of 7 to 9 carbon atoms and two chain aliphatic amino groups having a length close to 18 carbon atoms, it not only provides flexibility to polyimide, but also can Hydrazone is formed as an asymmetric chemical structure or a non-planar chemical structure, Therefore, it is considered that the dielectric constant of polyfluorene can be reduced.
相對於全部二胺成分,二聚物酸型二胺的投入量可為4莫耳%~40莫耳%的範圍內、優選為4莫耳%~30莫耳%的範圍內、更優選為4莫耳%~15莫耳%的範圍內。若二聚物酸型二胺小於4莫耳%,則有聚醯亞胺的介電特性降低的傾向,若二聚物酸型二胺超過40莫耳%,則有因聚醯亞胺的玻璃轉移溫度的降低而耐熱性惡化的傾向。 The input amount of the dimer acid-type diamine may be within a range of 4 mol% to 40 mol%, preferably within a range of 4 mol% to 30 mol%, and more preferably for all the diamine components. Within the range of 4 mol% to 15 mol%. If the dimer acid-type diamine is less than 4 mol%, the dielectric properties of polyfluorene imine tend to decrease. If the dimer acid-type diamine is more than 40 mol%, there is a tendency for polyimide. A decrease in glass transition temperature tends to deteriorate heat resistance.
二聚物酸型二胺可以獲得市售品,例如可以列舉:日本禾大(Croda Japan)公司製造的PRIAMINE1073(商品名)、同PRIAMINE1074(商品名)、日本科寧(Cognis Japan)公司製造的Versamine 551(商品名)、同Versamine 552(商品名)等。 Commercial products can be obtained from dimer acid type diamines. Examples include PRIAMINE 1073 (trade name) manufactured by Croda Japan, the same PRIAMINE 1074 (trade name), and Cognis Japan. Versamine 551 (trade name), same as Versamine 552 (trade name), and the like.
另外,基團R2例如可以列舉:下述式(5)~式(7)所示的基團。 Examples of the group R 2 include groups represented by the following formulae (5) to (7).
[式(5)~式(7)中,R3獨立表示碳數1~6的1價烴基或烷氧基,Z表示單鍵、選自碳數1~15的2價烴基、-O-、-S-、-CO-、-SO-、-SO2-、-NH-或-CONH-的2價基團,n1獨立表示0~4的整 數] [In formulas (5) to (7), R 3 independently represents a monovalent hydrocarbon group or alkoxy group having 1 to 6 carbon atoms, Z represents a single bond, a divalent hydrocarbon group selected from 1 to 15 carbon atoms, -O- , -S-, -CO-, -SO-, -SO 2- , -NH- or -CONH-, n 1 independently represents an integer from 0 to 4]
特別是從減少聚醯亞胺的極性基、提高介電特性的觀點來看,基團R2優選:式(5)~式(7)中的Z為單鍵、碳數1~15的2價烴基、R3為碳數1~6的1價烴基、n1為0~4的整數。 In particular, from the viewpoint of reducing the polar group of polyfluoreneimide and improving the dielectric properties, the group R 2 is preferably: Z in the formulae (5) to (7) is a single bond and 2 to 2 carbon atoms. A valent hydrocarbon group, R 3 is a monovalent hydrocarbon group having 1 to 6 carbon atoms, and n 1 is an integer of 0 to 4.
具有基團R2作為殘基的二胺例如可以列舉:4,4'-二氨基二苯醚、2'-甲氧基-4,4'-二氨基苯甲醯苯胺、1,4-雙(4-氨基苯氧基)苯、1,3-雙(4-氨基苯氧基)苯、2,2'-雙[4-(4-氨基苯氧基)苯基]丙烷、2,2'-二甲基-4,4'-二氨基聯苯、3,3'-二羥基-4,4'-二氨基聯苯、4,4'-二氨基苯甲醯苯胺、2,2-雙-[4-(3-氨基苯氧基)苯基]丙烷、雙[4-(4-氨基苯氧基)苯基]碸、雙[4-(3-氨基苯氧基)苯基]碸、雙[4-(4-氨基苯氧基)]聯苯、雙[4-(3-氨基苯氧基)]聯苯、雙[1-(4-氨基苯氧基)]聯苯、雙[1-(3-氨基苯氧基)]聯苯、雙[4-(4-氨基苯氧基)苯基]甲烷、雙[4-(3-氨基苯氧基)苯基]甲烷、雙[4-(4-氨基苯氧基)苯基]醚、雙[4-(3-氨基苯氧基)苯基]醚、雙[4-(4-氨基苯氧基)]二苯甲酮、雙[4-(3-氨基苯氧基)]二苯甲酮、雙[4,4'-(4-氨基苯氧基)]苯甲醯苯胺、雙[4,4'-(3-氨基苯氧基)]苯甲醯苯胺、9,9-雙[4-(4-氨基苯氧基)苯基]芴、9,9-雙[4-(3-氨基苯氧基)苯基]芴、2,2-雙-[4-(4-氨基苯氧基)苯基]六氟丙烷、2,2-雙-[4-(3-氨基苯氧基)苯基]六氟丙烷、4,4'-亞甲基二鄰甲苯胺、4,4'-亞甲基二-2,6-二甲基苯胺、4,4'-亞甲基-2,6-二乙基苯胺、4,4'-二氨基二苯基丙烷、3,3'-二氨基二苯基丙烷、4,4'-二氨基二苯基乙烷、3,3'-二氨基二苯基乙烷、4,4'-二氨基二苯基甲烷、3,3'-二氨基二苯基甲烷、4,4'-二氨基二苯基硫醚、3,3'- 二氨基二苯基硫醚、4,4'-二氨基二苯基碸、3,3'-二氨基二苯基碸、4,4'-二氨基二苯醚、3,3-二氨基二苯醚、3,4'-二氨基二苯醚、聯苯胺、3,3'-二氨基聯苯、3,3'-二甲基-4,4'-二氨基聯苯、3,3'-二甲氧基聯苯胺、4,4"-二氨基-對聯三苯、3,3"-二氨基-對聯三苯、間苯二胺、對苯二胺、2,6-二氨基吡啶、1,4-雙(4-氨基苯氧基)苯、1,3-雙(4-氨基苯氧基)苯、4,4'-[1,4-苯雙(1-甲基亞乙基)]雙苯胺、4,4'-[1,3-苯雙(1-甲基亞乙基)]雙苯胺、雙(對氨基環己基)甲烷、雙(對β-氨基-叔丁基苯基)醚、雙(對β-甲基-δ-氨基戊基)苯、對雙(2-甲基-4-氨基戊基)苯、對雙(1,1-二甲基-5-氨基戊基)苯、1,5-二氨基萘、2,6-二氨基萘、2,4-雙(β-氨基-叔丁基)甲苯、2,4-二氨基甲苯、間二甲苯-2,5-二胺、對二甲苯-2,5-二胺、間二甲苯二胺、對二甲苯二胺、2,6-二氨基吡啶、2,5-二氨基吡啶、2,5-二氨基-1,3,4-噁二唑、哌嗪等。 Having a R 2 group as the diamine residue may include, for example: 4,4'-diaminodiphenyl ether, 4,4'-diamino-2'-methoxy-benzoyl aniline, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 2,2 '-Dimethyl-4,4'-diaminobiphenyl, 3,3'-dihydroxy-4,4'-diaminobiphenyl, 4,4'-diaminobenzidine aniline, 2,2- Bis- [4- (3-aminophenoxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] fluorene, bis [4- (3-aminophenoxy) phenyl]碸, bis [4- (4-aminophenoxy)] biphenyl, bis [4- (3-aminophenoxy)] biphenyl, bis [1- (4-aminophenoxy)] biphenyl, Bis [1- (3-aminophenoxy)] biphenyl, bis [4- (4-aminophenoxy) phenyl] methane, bis [4- (3-aminophenoxy) phenyl] methane, Bis [4- (4-aminophenoxy) phenyl] ether, bis [4- (3-aminophenoxy) phenyl] ether, bis [4- (4-aminophenoxy)] dibenzoyl Ketone, bis [4- (3-aminophenoxy)] benzophenone, bis [4,4 '-(4-aminophenoxy)] benzidine aniline, bis [4,4'-(3 -Aminophenoxy)] benzidineaniline, 9,9-bis [4- (4-aminophenoxy) phenyl] fluorene, 9,9-bis [4- (3-amino Phenylphenoxy) phenyl] fluorene, 2,2-bis- [4- (4-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis- [4- (3-aminophenoxy ) Phenyl] hexafluoropropane, 4,4'-methylenedi-o-toluidine, 4,4'-methylenebis-2,6-dimethylaniline, 4,4'-methylene-2 , 6-diethylaniline, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylethane, 3,3'- Diaminodiphenylethane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfide, 3,3'- Diaminodiphenylsulfide, 4,4'-diaminodiphenylphosphonium, 3,3'-diaminodiphenylphosphonium, 4,4'-diaminodiphenyl ether, 3,3-diaminodiphenyl ether Phenylene ether, 3,4'-diaminodiphenyl ether, benzidine, 3,3'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3 ' -Dimethoxybenzidine, 4,4 "-diamino-p-terphenyl, 3,3" -diamino-p-terphenyl, m-phenylenediamine, p-phenylenediamine, 2,6-diaminopyridine, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 4,4 '-[1,4-benzenebis (1-methylethylene) )] Bisaniline, 4,4 '-[1,3-phenylbis (1-methylethylene)] bisbenzene , Bis (p-aminocyclohexyl) methane, bis (p-amino-β- - tert-butylphenyl) ether, bis (p-methyl β- - [delta] - amino-pentyl) benzene, p-bis (2-methyl-4 -Aminopentyl) benzene, p-bis (1,1-dimethyl-5-aminopentyl) benzene, 1,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,4-bis (β- (Amino-t-butyl) toluene, 2,4-diaminotoluene, m-xylene-2,5-diamine, p-xylene-2,5-diamine, m-xylenediamine, p-xylenediamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 2,5-diamino-1,3,4-oxadiazole, piperazine and the like.
根據聚醯亞胺的介電特性,適合用於製備聚醯亞胺的前驅物的芳香族四羧酸酐例如可以列舉:3,3',4,4'-聯苯四甲酸二酐(BPDA)、3,3',4,4'-二苯甲酮四甲酸二酐(BTDA)、3,3',4,4'-二苯基碸四甲酸二酐(DSDA)、均苯四甲酸二酐(PMDA)等。其中,特別優選的酸酐可以列舉:3,3',4,4'-聯苯四甲酸二酐(BPDA)、3,3',4,4'-二苯甲酮四甲酸二酐(BTDA)等。所述芳香族四羧酸酐也可以組合2種以上而調配。 According to the dielectric properties of polyfluorene imine, suitable aromatic tetracarboxylic anhydrides for preparing precursors of polyfluorene imine include, for example, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride (BPDA) , 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride (BTDA), 3,3', 4,4'-diphenylphosphonium tetracarboxylic dianhydride (DSDA), pyromellitic dianhydride Anhydride (PMDA) and so on. Among them, particularly preferred anhydrides include 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride (BPDA), 3,3', 4,4'-benzophenonetetracarboxylic dianhydride (BTDA). Wait. The aromatic tetracarboxylic anhydride may be prepared by combining two or more kinds.
除了所述酸酐外,也適合使用矽氧烷四甲酸二酐,例如可以列舉:下述通式(8)所示的矽氧烷四甲酸二酐。 In addition to the acid anhydride, a siloxane tetracarboxylic dianhydride is also suitably used, and examples thereof include the siloxane tetracarboxylic dianhydride represented by the following general formula (8).
[式(8)中,R、R'獨立表示3價的碳數1~4的脂肪族基或芳香族基,R4~R7獨立表示可以具有取代基的碳數1~6的烴基,n表示1~50的整數,平均重複數為1~20] [In formula (8), R and R 'independently represent a trivalent aliphatic group or an aromatic group having 1 to 4 carbon atoms, and R 4 to R 7 independently represent a hydrocarbon group having 1 to 6 carbon atoms which may have a substituent, n represents an integer from 1 to 50, and the average repeat number is 1 to 20]
除了所述酸酐外,也適合使用矽氧烷四甲酸二酐,例如可以列舉:下述通式(9)所示的矽氧烷四甲酸二酐。 In addition to the acid anhydride, a siloxane tetracarboxylic dianhydride is also suitably used, and examples thereof include a siloxane tetracarboxylic dianhydride represented by the following general formula (9).
[式(9)中,R11及R12獨立表示2價烴基,R4~R7獨立表示可以具有取代基的碳數1~6的烴基,n表示1~50的整數,平均重複數為1~20] [In formula (9), R 11 and R 12 independently represent a divalent hydrocarbon group, R 4 to R 7 independently represent a hydrocarbon group having 1 to 6 carbon atoms which may have a substituent, n represents an integer of 1 to 50, and the average repeat number is 1 ~ 20]
另外,根據聚醯亞胺的介電特性,適合用於製備聚醯亞胺的前驅物的芳香族二胺例如可以列舉:2,2-雙(4-氨基苯氧基苯基)丙烷(BAPP)、2,2'-二乙烯基-4,4'-二氨基聯苯(VAB)、2,2'-二甲基-4,4'-二氨基聯苯(m-TB)、2,2'-二乙基-4,4'-二氨基聯苯、2,2',6,6'-四甲基-4,4'-二氨基聯苯、2,2'-二苯基-4,4'-二氨基聯苯、9,9-雙(4- 氨基苯基)芴等。其中,特別優選的二胺成分可以列舉:2,2-雙(4-氨基苯氧基苯基)丙烷(BAPP)、2,2'-二乙烯基-4,4'-二氨基聯苯(VAB)、2,2'-二甲基-4,4'-二氨基聯苯(m-TB)等。所述芳香族二胺也可以組合2種以上而調配。 In addition, according to the dielectric properties of polyfluorene imine, aromatic diamines suitable for preparing a precursor of polyfluorene imine include, for example, 2,2-bis (4-aminophenoxyphenyl) propane (BAPP ), 2,2'-divinyl-4,4'-diaminobiphenyl (VAB), 2,2'-dimethyl-4,4'-diaminobiphenyl (m-TB), 2, 2'-diethyl-4,4'-diaminobiphenyl, 2,2 ', 6,6'-tetramethyl-4,4'-diaminobiphenyl, 2,2'-diphenyl- 4,4'-diaminobiphenyl, 9,9-bis (4- Aminophenyl) fluorene and the like. Among them, particularly preferred diamine components include 2,2-bis (4-aminophenoxyphenyl) propane (BAPP), 2,2'-divinyl-4,4'-diaminobiphenyl ( VAB), 2,2'-dimethyl-4,4'-diaminobiphenyl (m-TB), etc. The aromatic diamine may be prepared by combining two or more kinds.
所述酸酐及二胺分別可以僅使用其1種,也可以併用2種以上而使用。另外,也可以將所述通式(1)及通式(2)所不含的其他二胺及酸酐與所述酸酐或二胺一起使用,此時,其他酸酐或二胺的使用比例優選可設為10莫耳%以下,更優選可設為5莫耳%以下。藉由選擇酸酐及二胺的種類、或使用2種以上的酸酐或二胺時的各莫耳比,而可以控制熱膨脹性、黏接性、玻璃轉移溫度等。 The acid anhydride and the diamine may be used alone, or two or more of them may be used in combination. In addition, other diamines and acid anhydrides not included in the general formulae (1) and (2) may be used together with the acid anhydrides or diamines. In this case, the use ratio of other acid anhydrides or diamines is preferably It is 10 mol% or less, More preferably, it is 5 mol% or less. By selecting the type of the acid anhydride and the diamine, or the mole ratios when two or more kinds of the acid anhydride or the diamine are used, the thermal expansion property, adhesiveness, glass transition temperature, and the like can be controlled.
具有通式(1)及通式(2)所示的構成單元的聚醯亞胺可以藉由以下方式製造:使所述芳香族四羧酸酐、二聚物酸型二胺及芳香族二胺在溶劑中反應,生成前驅物樹脂後進行加熱閉環。例如使酸酐成分與二胺成分以大致等莫耳溶解於有機溶劑中,在0℃~100℃的範圍內的溫度下攪拌30分鐘~24小時進行聚合反應,藉此獲得作為聚醯亞胺的前驅物的聚醯胺酸。在反應時,所生成的前驅物在有機溶劑中以5重量%~30重量%的範圍內、優選為10重量%~20重量%的範圍內的方式溶解反應成分。用於聚合反應的有機溶劑例如可以列舉:N,N-二甲基甲醯胺、N,N-二甲基乙醯胺(DMAC)、N-甲基-2-吡咯烷酮、2-丁酮、二甲基亞碸、硫酸二甲酯、環己酮、二噁烷、四氫呋喃、二乙二醇二甲醚、 三乙二醇二甲醚等。也可以併用2種以上所述溶劑而使用,而且也可以併用如二甲苯、甲苯般的芳香族烴。另外,此種有機溶劑的使用量並無特別限制,優選將藉由聚合反應而得的聚醯胺酸溶液(聚醯亞胺前驅物溶液)的濃度調整為如5重量%~30重量%左右的使用量而使用。 The polyfluorene imide having a structural unit represented by the general formula (1) and the general formula (2) can be produced by making the aromatic tetracarboxylic anhydride, a dimer acid-type diamine, and an aromatic diamine The reaction is performed in a solvent, and a precursor resin is generated, followed by heating and ring closure. For example, an acid anhydride component and a diamine component are dissolved in an organic solvent at approximately equal moles, and the polymerization reaction is performed by stirring at a temperature in a range of 0 ° C to 100 ° C for 30 minutes to 24 hours, thereby obtaining polyimide. Precursor Polyamic Acid. During the reaction, the produced precursor dissolves the reaction component in an organic solvent in a range of 5 to 30% by weight, preferably in a range of 10 to 20% by weight. Examples of the organic solvent used in the polymerization reaction include N, N-dimethylformamide, N, N-dimethylacetamide (DMAC), N-methyl-2-pyrrolidone, 2-butanone, Dimethyl sulfene, dimethyl sulfate, cyclohexanone, dioxane, tetrahydrofuran, diethylene glycol dimethyl ether, Triethylene glycol dimethyl ether and the like. These solvents may be used in combination of two or more kinds thereof, and aromatic hydrocarbons such as xylene and toluene may also be used in combination. In addition, the use amount of such an organic solvent is not particularly limited, and it is preferable to adjust the concentration of the polyamidic acid solution (polyimide precursor solution) obtained by the polymerization reaction to, for example, about 5% to 30% by weight. The amount of use.
所合成的前驅物通常有利的是用作反應溶劑溶液,但根據需要可以進行濃縮、稀釋或置換為其他有機溶劑。另外,前驅物通常溶劑可溶性優異,因此可以有利地使用。使前驅物進行醯亞胺化的方法並無特別限制,例如適合採用:在所述溶劑中,在80℃~400℃的範圍內的溫度條件下歷時1小時~24小時進行加熱的熱處理。 The synthesized precursor is generally advantageously used as a reaction solvent solution, but can be concentrated, diluted or replaced with other organic solvents as needed. In addition, the precursor is generally excellent in solvent solubility, and thus can be favorably used. The method of subjecting the precursor to ammonium imidization is not particularly limited, and for example, it is suitable to adopt a heat treatment in the solvent at a temperature in a range of 80 ° C. to 400 ° C. for 1 hour to 24 hours.
聚醯亞胺絕緣層根據需要可以在聚醯亞胺層中含有無機填料。具體而言,例如可以列舉:二氧化矽、氧化鋁、氧化鎂、氧化鈹、氮化硼、氮化鋁、氮化矽、氟化鋁、氟化鈣等。所述無機填料可以使用1種或混合2種以上而使用。 The polyimide insulating layer may contain an inorganic filler in the polyimide layer as necessary. Specific examples include silicon dioxide, aluminum oxide, magnesium oxide, beryllium oxide, boron nitride, aluminum nitride, silicon nitride, aluminum fluoride, and calcium fluoride. The said inorganic filler can be used individually by 1 type or in mixture of 2 or more types.
〈銅箔〉 <Copper foil>
在本實施形態的覆銅積層板中,銅箔與聚醯亞胺絕緣層接觸的面的平方平均粗糙度(Rq)為0.05μm以上、且小於0.5μm的範圍內,優選可為0.1μm以上、0.4μm以下的範圍內。此處所定義的平方平均粗糙度(Rq),是根據JIS B0601:2001的平方平均粗糙度。另外,銅箔的材質也可以是銅合金。 In the copper-clad laminated board of this embodiment, the square average roughness (Rq) of the surface where the copper foil contacts the polyimide insulation layer is 0.05 μm or more and less than 0.5 μm , and may preferably be 0.1 μ m or more, in the range of 0.4 μ m or less. The square average roughness (Rq) defined here is a square average roughness according to JIS B0601: 2001. The material of the copper foil may be a copper alloy.
本實施形態的覆銅積層板中所使用的銅箔若充分滿足 所述特性,則並無特別限定,可以使用市售的銅箔。作為其具體例,壓延銅箔可以列舉:JX日礦日石金屬股份有限公司製造的BHY-22B-T(商品名)、同GHY5-93F-T(商品名)等,電解銅箔可以列舉:古河電氣工業股份有限公司製造的F1-WS(商品名)、日本電解股份有限公司製造的HLS(商品名)、同HLS-2型(商品名)、同HLB(商品名)、JX日礦日石金屬股份有限公司製造的AMFN(商品名)等。 If the copper foil used in the copper-clad laminated board of this embodiment satisfies The characteristics are not particularly limited, and a commercially available copper foil can be used. As specific examples thereof, rolled copper foils include BHY-22B-T (trade name) manufactured by JX Nippon Nissei Metal Co., Ltd., and the same as GHY5-93F-T (trade name). The electrolytic copper foils include: F1-WS (trade name) manufactured by Furukawa Electric Industry Co., Ltd., HLS (trade name) manufactured by Japan Electrolytic Co., Ltd., same HLS-2 (trade name), same HLB (trade name), JX Nippon Steel AMFN (trade name) manufactured by Shimetal Co., Ltd.
在對信號配線供給高頻信號的狀態下,存在以下問題(表皮效應):電流僅在所述信號配線的表面流動,電流流動的有效截面積變少而直流電阻變大,信號衰減。藉由降低銅箔的與聚醯亞胺絕緣層接觸的面的表面粗糙度,而可以抑制因所述表皮效應引起的信號配線的電阻增大。但是,若為了滿足電性能要求基準而降低表面粗糙度,則銅箔與聚醯亞胺絕緣層的黏接力(剝離強度)變弱。因此,從可以滿足電性能要求、並確保與聚醯亞胺絕緣層的黏接性的觀點來看,作為表面粗糙度的參數,重要的是控制平方平均粗糙度(Rq)。即,根據後述仿真試驗的結果推測:平方平均粗糙度(Rq)與其他的表面粗糙度的指標相比,會更準確地反映銅箔表面的微細的凹凸對因表皮效應而在銅箔表面流動的電流造成的影響。因此,作為銅箔的與聚醯亞胺絕緣層接觸的面的表面粗糙度的指標,使用平方平均粗糙度(Rq),藉由將所述平方平均粗糙度(Rq)規定在所述範圍內,而可以同時滿足存在與聚醯亞胺絕緣層的黏接性的確保、與配線的電阻增大的抑制的 折衷的關係的要求。 In a state where a high-frequency signal is supplied to a signal wiring, there is a problem (skin effect): a current flows only on the surface of the signal wiring, an effective cross-sectional area of the current flow decreases, a DC resistance increases, and a signal is attenuated. By reducing the surface roughness of the surface of the copper foil in contact with the polyimide insulation layer, it is possible to suppress an increase in the resistance of the signal wiring due to the skin effect. However, if the surface roughness is reduced in order to meet the standard of electrical performance requirements, the adhesion (peel strength) between the copper foil and the polyimide insulation layer becomes weak. Therefore, it is important to control the square average roughness (Rq) as a parameter of the surface roughness from the viewpoint of meeting the electrical performance requirements and ensuring the adhesion to the polyimide insulation layer. That is, it is estimated from the results of the simulation test described later that the square average roughness (Rq) more accurately reflects the fine unevenness on the surface of the copper foil on the surface of the copper foil due to the skin effect than other indicators of surface roughness. The effect of the current. Therefore, as an index of the surface roughness of the surface of the copper foil in contact with the polyimide insulation layer, the square average roughness (Rq) is used, and the square average roughness (Rq) is defined within the range. , And can simultaneously satisfy the existence of the adhesion with the polyimide insulation layer and the suppression of the increase in resistance to the wiring Eclectic requirements.
另外,銅箔的與絕緣樹脂層接觸的面的表面粗糙度,優選算術平均高度Ra為0.2μm以下,且優選十點平均粗糙度Rz為1.5μm以下。 The surface roughness of the surface of the copper foil that is in contact with the insulating resin layer is preferably an arithmetic mean height Ra of 0.2 μm or less, and preferably a ten-point average roughness Rz of 1.5 μm or less.
〈印刷配線板〉 <Printed wiring board>
本實施形態的印刷配線板藉由利用常法將本實施形態的覆銅積層板的銅箔加工成圖案狀而形成配線層,而可以製造作為本發明的一個實施形態的印刷配線板。 The printed wiring board of this embodiment can form a wiring layer by processing the copper foil of this copper-clad laminated board of this embodiment into a pattern by a conventional method, and can manufacture the printed wiring board which is one embodiment of this invention.
以下,代表性地列舉澆鑄法的情形為例,對本實施形態的印刷配線板的製造方法進行具體地說明。 Hereinafter, the case of a casting method is given as an example, and the manufacturing method of the printed wiring board of this embodiment is demonstrated concretely.
首先,覆銅積層板的製造方法可以包括以下的步驟(1)~步驟(3)。 First, the method for manufacturing a copper-clad laminated board may include the following steps (1) to (3).
步驟(1): step 1):
步驟(1)是獲得作為本實施形態中所用的聚醯亞胺的前驅物的聚醯胺酸的樹脂溶液的步驟。 Step (1) is a step of obtaining a polyamic acid resin solution that is a precursor of the polyamidine used in the present embodiment.
步驟(2): Step (2):
步驟(2)是在銅箔上塗佈聚醯胺酸的樹脂溶液,而形成塗佈膜的步驟。銅箔能以切片狀、卷狀的形狀、或環形帶狀等形狀使用。為了獲得生產性,有效的是形成卷狀或環形帶狀的形態,並設置可以連續生產的形式。而且,從表現出更大的印刷配線板中的配線圖案精度的改善效果的觀點來看,銅箔優選形成為長條的卷狀銅箔。 Step (2) is a step of applying a polyamic acid resin solution on a copper foil to form a coating film. The copper foil can be used in a shape such as a slice shape, a roll shape, or an endless belt shape. In order to obtain productivity, it is effective to form a roll shape or an endless belt shape, and to provide a form capable of continuous production. In addition, from the viewpoint of exhibiting a greater effect of improving the accuracy of a wiring pattern in a printed wiring board, the copper foil is preferably formed as a long rolled copper foil.
形成塗佈膜的方法可以藉由將聚醯胺酸的樹脂溶液直 接塗佈於銅箔上後進行乾燥而形成。塗佈的方法並無特別限制,例如可以藉由缺角輪(comma)、模具、刀、唇等的塗佈機進行塗佈。 The method for forming a coating film can be obtained by directly It is formed after being coated on a copper foil and then dried. The coating method is not particularly limited, and for example, coating can be performed by a coater such as a comma, a mold, a knife, or a lip.
聚醯亞胺層可以是單層,也可以包含多層。在將聚醯亞胺層設為多層時,可以在包含不同構成成分的前驅物的層上依序塗佈其他前驅物而形成。在前驅物的層包含3層以上時,可以使用2次以上的相同構成的前驅物。層結構簡單的2層或單層在工業上可以有利地獲得,因此優選。另外,前驅物的層的厚度(乾燥後)例如可為3μm~100μm的範圍內、優選可為3μm~50μm的範圍內。 The polyimide layer may be a single layer or may include a plurality of layers. When a polyimide layer is formed in multiple layers, it can be formed by sequentially coating other precursors on a layer containing precursors having different constituent components. When the precursor layer includes three or more layers, a precursor having the same configuration may be used twice or more. A two-layer or single-layer having a simple layer structure is industrially advantageous, and is therefore preferred. The thickness of the precursor layer (after drying) may be, for example, in a range of 3 μm to 100 μm , and preferably in a range of 3 μm to 50 μm .
在將聚醯亞胺層設為多層時,優選以與銅箔接觸的聚醯亞胺層成為熱塑性聚醯亞胺層的方式形成前驅物的層。藉由使用熱塑性聚醯亞胺,而可以提高與銅箔的密接性。此種熱塑性聚醯亞胺的玻璃轉移溫度(Tg)優選為360℃以下,更優選為200℃~320℃。 When a polyimide layer is multilayered, it is preferable to form a precursor layer so that the polyimide layer which contacts a copper foil becomes a thermoplastic polyimide layer. By using thermoplastic polyfluorene imide, the adhesion to copper foil can be improved. The glass transition temperature (Tg) of such a thermoplastic polyimide is preferably 360 ° C or lower, and more preferably 200 ° C to 320 ° C.
另外,在將單層或多層的前驅物的層暫時醯亞胺化而製 成單層或多層的聚醯亞胺層後,也可以進一步在其上形成前驅物的層。 In addition, a layer of a single-layer or multi-layer precursor is temporarily imidized and produced. After forming a single-layer or multiple-layer polyimide layer, a precursor layer may be further formed thereon.
步驟(3): Step (3):
步驟(3)是將塗佈膜熱處理後進行醯亞胺化,而形成聚醯亞胺絕緣層的步驟。醯亞胺化的方法並無特別限制,例如適合採用:在80℃~400℃的範圍內的溫度條件下進行1分鐘~60分鐘的範 圍內的時間的加熱的熱處理。為了抑制金屬層的氧化,優選低氧氣環境下的熱處理,具體而言,優選在氮氣或稀有氣體等惰性氣體環境下、氫氣等還原氣體環境下、或真空中進行。藉由熱處理,塗佈膜中的聚醯胺酸進行醯亞胺化,而形成聚醯亞胺。 Step (3) is a step of forming a polyfluorene imide insulating layer by heat-treating the coating film and then performing fluorimidization. The method of imidization is not particularly limited. For example, it is suitable to adopt a range of 1 minute to 60 minutes under a temperature range of 80 ° C to 400 ° C. Heat treatment within the range of time. In order to suppress the oxidation of the metal layer, heat treatment in a low oxygen environment is preferred, and specifically, it is preferably performed in an inert gas environment such as nitrogen or a rare gas, a reducing gas environment such as hydrogen, or in a vacuum. The polyimide in the coating film is imidized by heat treatment to form a polyimide.
如以上所述般,可以製造具有聚醯亞胺層(單層或多層)與銅箔的覆銅積層板。 As described above, a copper-clad laminated board having a polyimide layer (single layer or multiple layers) and a copper foil can be manufactured.
另外,電路基板的製造方法除了所述(1)~(3)的步驟外,可以進一步包括以下步驟(4)。 In addition, the method for manufacturing a circuit board may further include the following step (4) in addition to the steps (1) to (3).
步驟(4): Step (4):
步驟(4)是將覆銅積層板的銅箔進行圖案化而形成配線層的步驟。在本步驟中,藉由將銅箔蝕刻為特定形狀而形成圖案,藉由加工成配線層而獲得印刷配線板。蝕刻例如可以藉由利用光微影技術等的任意方法進行。 Step (4) is a step of patterning the copper foil of the copper-clad laminated board to form a wiring layer. In this step, a pattern is formed by etching a copper foil into a specific shape, and a printed wiring board is obtained by processing into a wiring layer. The etching can be performed by, for example, an arbitrary method using a photolithography technique.
另外,以上的說明中,僅對印刷配線板的製造方法的特徵性步驟進行了說明。即,在製造印刷配線板時,通常所進行的所述以外的步驟、例如前步驟中的通孔加工、或後步驟的端子鍍敷、外形加工等步驟,可以根據常法進行。 In the above description, only the characteristic steps of the method for manufacturing a printed wiring board have been described. That is, when manufacturing a printed wiring board, steps other than the above, such as through-hole processing in the previous step, or terminal plating and external shape processing in the subsequent step, can be performed according to a conventional method.
如以上所述般,藉由使用本實施形態的聚醯亞胺絕緣層及銅箔,而可以形成傳輸特性優異的覆銅積層板。另外,藉由使用本實施形態的聚醯亞胺絕緣層及銅箔,而在以FPC為代表的電路基板中,可以改善電信號的傳輸特性,並提高可靠性。 As described above, by using the polyfluorene imide insulating layer and copper foil of this embodiment, a copper-clad laminated board having excellent transmission characteristics can be formed. In addition, by using the polyfluorene imide insulating layer and the copper foil of this embodiment, in a circuit board typified by FPC, it is possible to improve electrical signal transmission characteristics and improve reliability.
[實施例] [Example]
以下表示實施例,對本發明的特徵進行更具體地說明。 但是,本發明的範圍並不限定於實施例。另外,在以下的實施例中,只要無特別說明,各種測定、評價依據下述所述。 Examples are given below to describe the features of the present invention more specifically. However, the scope of the present invention is not limited to the examples. In the following examples, unless otherwise specified, various measurements and evaluations are based on the following.
[熱膨脹係數(Coefficient of Thermal Expansion,CTE)的測定] [Measurement of Coefficient of Thermal Expansion (CTE)]
熱膨脹係數是使用熱機械分析儀(布魯克(Bruker)公司製造、商品名;4000SA),一邊施加5.0g的負荷,一邊以固定的升溫速度將3mm×20mm的尺寸的聚醯亞胺膜從30℃升溫至250℃,接著在所述溫度下保持10分鐘後,以5℃/min的速度進行冷卻,而求出從240℃至100℃為止的平均熱膨脹係數(線熱膨脹係數)。 The thermal expansion coefficient is a thermomechanical analyzer (manufactured by Bruker, trade name: 4000SA), while applying a load of 5.0g, the polyimide film having a size of 3mm × 20mm is increased from 30 ° C. at a constant temperature increase rate. The temperature was raised to 250 ° C, and the temperature was maintained at the temperature for 10 minutes, and then cooled at a rate of 5 ° C / min to obtain an average thermal expansion coefficient (linear thermal expansion coefficient) from 240 ° C to 100 ° C.
[玻璃轉移溫度(Tg)的測定] [Measurement of glass transition temperature (Tg)]
玻璃轉移溫度是使用黏彈性測定裝置(DMA:TA儀器(TA Instruments)公司製造、商品名;RSA3),以升溫速度為4℃/min、頻率為1Hz,將5mm×20mm的尺寸的聚醯亞胺膜從30℃升溫至400℃為止,將彈性模數變化變為最大(tan δ變化率最大)的溫度作為玻璃轉移溫度進行評價。 The glass transition temperature was measured using a viscoelasticity measuring device (DMA: manufactured by TA Instruments, trade name; RSA3) at a temperature rise rate of 4 ° C / min and a frequency of 1 Hz. The temperature of the amine film was raised from 30 ° C to 400 ° C, and the temperature at which the change in the elastic modulus became the maximum (tan δ change rate was the largest) was evaluated as the glass transition temperature.
[剝離強度的測定] [Measurement of peel strength]
剝離強度是使用滕喜龍(TENSILON)試驗機(東洋精機製作所公司製造、商品名;STROGRAPH VE-10),將寬度為1mm的樣品(包含基材/樹脂層的積層體)的樹脂層側藉由雙面膠帶固定於鋁板,求出將基材朝著180°方向以50mm/min的速度將樹脂層與基材剝離時的力。 The peeling strength was measured by using a TENSILON tester (manufactured by Toyo Seiki Seisakusho, trade name; STROGRAPH VE-10) with a resin layer side of a sample (including a substrate / resin layer laminate) having a width of 1 mm The double-sided tape was fixed to an aluminum plate, and the force when peeling the resin layer from the substrate at a speed of 50 mm / min in the 180 ° direction was determined.
[介電常數及介電正切的測定] [Determination of dielectric constant and dielectric tangent]
介電常數及介電正切是使用空腔共振器微擾法介電常數評價 裝置(安捷倫(Agilent)公司製造、商品名;向量網路分析儀(Vector Network Analyzer)E8363B),測定特定頻率下的樹脂片(硬化後的樹脂片)的介電常數及介電正切。另外,測定所使用的樹脂片是在溫度為24℃~26℃、濕度為45%~55%的條件下放置24小時的樹脂片。 The dielectric constant and dielectric tangent are evaluated using the cavity resonator perturbation method. The device (manufactured by Agilent Corporation, trade name; Vector Network Analyzer E8363B) measures the dielectric constant and dielectric tangent of a resin sheet (cured resin sheet) at a specific frequency. In addition, the resin sheet used for the measurement was a resin sheet left for 24 hours under conditions of a temperature of 24 ° C. to 26 ° C. and a humidity of 45% to 55%.
[銅箔的表面粗糙度的測定] [Measurement of surface roughness of copper foil]
1)平方平均粗糙度(Rq)的測定 1) Measurement of square average roughness (Rq)
使用觸針式表面粗糙度計(小阪研究所股份有限公司製造、商品名;Surfcorder ET-3000),藉由力;100μN、速度;20μm、範圍;800μm的測定條件而求出。另外,表面粗糙度的計算是藉由依據JIS-B0601:2001的方法而計算。 A stylus-type surface roughness meter (manufactured by Kosaka Research Institute, trade name; Surfcorder ET-3000) was used to determine the measurement conditions of force; 100 μ N, speed; 20 μ m, range; 800 μ m Out. The surface roughness is calculated by a method according to JIS-B0601: 2001.
2)算術平均高度(Ra)的測定 2) Determination of arithmetic mean height (Ra)
使用觸針式表面粗糙度計(小阪研究所股份有限公司製造、商品名;Surfcorder ET-3000),藉由力:100μN、速度;20μm、範圍;800μm的測定條件而求出。另外,表面粗糙度的計算是藉由依據JIS-B0601:1994的方法而計算。 A stylus-type surface roughness meter (manufactured by Kosaka Research Institute, trade name; Surfcorder ET-3000) was used to determine the measurement conditions under force: 100 μ N, speed; 20 μ m, range; 800 μ m Out. The calculation of the surface roughness is performed by a method according to JIS-B0601: 1994.
3)十點平均粗糙度(Rz)的測定 3) Determination of ten-point average roughness (Rz)
使用觸針式表面粗糙度計(小阪研究所股份有限公司製造、商品名;Surfcorder ET-3000),藉由力;100μN、速度;20μm、範圍;800μm的測定條件而求出。另外,表面粗糙度的計算是藉由依據JIS-B0601:1994的方法而計算。 A stylus-type surface roughness meter (manufactured by Kosaka Research Institute, trade name; Surfcorder ET-3000) was used to determine the measurement conditions of force; 100 μ N, speed; 20 μ m, range; 800 μ m Out. The calculation of the surface roughness is performed by a method according to JIS-B0601: 1994.
[傳輸特性的評價] [Evaluation of transmission characteristics]
傳輸特性的評價是使用對覆銅積層板進行電路加工,對將特性阻抗(impedance)設為50Ω的微帶(microstrip)線路進行電 路加工的評價樣品,評價經電路加工之側(傳輸線路側)的傳輸特性。利用藉由短路-開路-負載-直通法(SHORT-OPEN-LOAD-Thru,SOLT)進行校正的向量網路分析儀,在特定頻率區域測定S參數,藉此利用S21(插入損失)進行評價。 Evaluation of transmission characteristics is performed by performing circuit processing on a copper-clad laminated board and electrically applying a microstrip line having a characteristic impedance of 50 Ω. Evaluation samples for circuit processing evaluate the transmission characteristics of the circuit processed side (transmission line side). A vector network analyzer calibrated by the SHORT-OPEN-LOAD-Thru (SOLT) method was used to measure the S parameter in a specific frequency region, and the evaluation was performed using S21 (insertion loss).
實施例及比較例中所用的縮寫符號表示以下的化合物。 The abbreviations used in the examples and comparative examples indicate the following compounds.
(A)聚醯亞胺原料 (A) Polyimide raw material
DDA:二聚物酸型二胺(日本禾大股份有限公司製造、商品名;PRIAMINE1074、碳數;36、胺值;205mgKOH/g、二聚物成分的含量;95重量%以上) DDA: Dimer acid type diamine (manufactured by Japan Heda Co., Ltd., trade name; PRIAMINE 1074, carbon number; 36, amine value; 205 mgKOH / g, content of dimer component; 95% by weight or more)
m-TB:2,2'-二甲基-4,4'-二氨基聯苯 m-TB: 2,2'-dimethyl-4,4'-diaminobiphenyl
BAPP:2,2-雙(4-氨基苯氧基苯基)丙烷 BAPP: 2,2-bis (4-aminophenoxyphenyl) propane
TPE-R:1,3-雙(4-氨基苯氧基)苯 TPE-R: 1,3-bis (4-aminophenoxy) benzene
Wandamin:4,4'-二氨基二環己基甲烷 Wandamin: 4,4'-diaminodicyclohexylmethane
BAFL:9,9-雙(4-氨基苯基)芴 BAFL: 9,9-bis (4-aminophenyl) fluorene
TFMB:2,2'-雙(三氟甲基)-4,4'-二氨基聯苯 TFMB: 2,2'-bis (trifluoromethyl) -4,4'-diaminobiphenyl
PMDA:均苯四甲酸二酐 PMDA: pyromellitic dianhydride
BPDA:3,3',4,4'-聯苯四甲酸二酐 BPDA: 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride
DMAc:N,N-二甲基乙醯胺 DMAc: N, N-dimethylacetamide
(B)銅箔 (B) Copper foil
銅箔(1):(電解銅箔、厚度;12μm、樹脂積層側的表面粗糙度Rq;0.14μm、Rz;0.64μm、Ra;0.10μm) Copper foil (1): (electrolytic copper foil, thickness; 12 μm , surface roughness Rq on the resin laminate side; 0.14 μm , Rz; 0.64 μm , Ra; 0.10 μm )
銅箔(2):(電解銅箔、厚度;12μm、樹脂積層側的表面粗糙度Rq;0.19μm、Rz;1.06μm、Ra;0.16μm) Copper foil (2): (electrolytic copper foil, thickness; 12 μm , surface roughness Rq on the resin laminate side; 0.19 μm , Rz; 1.06 μm , Ra; 0.16 μm )
銅箔(3):(電解銅箔、厚度;12μm、樹脂積層側的表面粗糙度Rq;0.27μm、Rz;1.36μm、Ra;0.21μm) Copper foil (3): (electrolytic copper foil, thickness; 12 μm , surface roughness Rq on the resin laminate side; 0.27 μm , Rz; 1.36 μm , Ra; 0.21 μm )
銅箔(4):(電解銅箔、厚度;12μm、樹脂積層側的表面粗糙度Rq;0.35μm、Rz;1.51μm、Ra;0.28μm) Copper foil (4): (electrolytic copper foil, thickness; 12 μm , surface roughness Rq on the resin laminate side; 0.35 μm , Rz; 1.51 μm , Ra; 0.28 μm )
銅箔(5):(電解銅箔、厚度;12μm、樹脂積層側的表面粗糙度Rq;0.5μm、Rz;1.65μm、Ra;0.36μm) Copper foil (5): (electrolytic copper foil, thickness; 12 μm , surface roughness Rq on the resin laminate side; 0.5 μm , Rz; 1.65 μm , Ra; 0.36 μm )
銅箔(6):(壓延銅箔、厚度;12μm、樹脂積層側的表面粗糙度Rq;0.24μm、Rz;1.30μm、Ra;0.18μm) Copper foil (6): (rolled copper foil, thickness; 12 μm , surface roughness Rq on the resin laminate side; 0.24 μm , Rz; 1.30 μm , Ra; 0.18 μm )
合成例1 Synthesis Example 1
在氮氣流下,在300ml的可分離燒瓶中,投入2.196g的DDA(0.0041莫耳)、16.367g的m-TB(0.0771莫耳)及212.5g的DMAc,在室溫下攪拌並溶解。接著,添加4.776g的BPDA(0.0162莫耳)及14.161g的PMDA(0.0649莫耳)後,在室溫下繼續攪拌3小時進行聚合反應,而獲得聚醯胺酸溶液a。聚醯胺酸溶液a的溶液黏度為26,000cps。 Under a nitrogen stream, 2.196 g of DDA (0.0041 mol), 16.367 g of m-TB (0.0771 mol), and 212.5 g of DMAc were put into a separable flask of 300 ml, and stirred and dissolved at room temperature. Next, 4.776 g of BPDA (0.0162 mol) and 14.161 g of PMDA (0.0649 mol) were added, and the mixture was stirred at room temperature for 3 hours to perform a polymerization reaction to obtain a polyamic acid solution a. The solution viscosity of the polyamic acid solution a was 26,000 cps.
合成例2~合成例13 Synthesis Example 2 to Synthesis Example 13
除了設為表1及表2所示的原料組成外,以與合成例1相同的方式製備聚醯胺酸溶液b~聚醯胺酸溶液m。 A polyamic acid solution b to a polyamino acid solution m were prepared in the same manner as in Synthesis Example 1 except that the raw material compositions shown in Tables 1 and 2 were used.
[製作例1] [Production example 1]
在厚度為18μm的電解銅箔的單面(表面粗糙度Rz;2.1μm)上,以硬化後的厚度為約25μm的方式,均勻地塗佈合成例1中所製備的聚醯胺酸溶液a後,在120℃下加熱乾燥而除去溶劑。接著,從120℃進行階段性熱處理至360℃為止,而完成醯亞胺化。對所得的覆金屬積層體,使用氯化鐵水溶液蝕刻除去銅箔,而獲得聚醯亞胺膜1。另外,構成聚醯亞胺膜1的聚醯亞胺為非熱塑性。 On one side (surface roughness Rz; 2.1 μm ) of the electrolytic copper foil having a thickness of 18 μm , the polymer prepared in Synthesis Example 1 was uniformly coated so that the thickness after curing was about 25 μm . After the sulfamic acid solution a, the solvent was removed by heating and drying at 120 ° C. Next, stepwise heat treatment was performed from 120 ° C to 360 ° C to complete the imidization. The obtained metal-clad laminate was subjected to etching to remove a copper foil using an aqueous solution of ferric chloride to obtain a polyfluorene film 1. The polyimide constituting the polyimide film 1 is non-thermoplastic.
求出聚醯亞胺膜1的熱膨脹係數、玻璃轉移溫度、介電常數及介電正切。將各測定結果表示於表3。 The thermal expansion coefficient, glass transition temperature, dielectric constant, and dielectric tangent of the polyfluoreneimide film 1 were obtained. Each measurement result is shown in Table 3.
[製作例2~製作例6] [Production example 2 to production example 6]
除了使用表3所示的聚醯胺酸溶液外,以與製作例1相同的方式,獲得製作例2~製作例6的聚醯亞胺膜2~聚醯亞胺膜6。求出所得的聚醯亞胺膜2~聚醯亞胺膜6的熱膨脹係數(CTE)、玻璃轉移溫度、介電常數及介電正切。將各測定結果表示於表3。 A polyimide film 2 to a polyimide film 6 of Production Example 2 to Production Example 6 were obtained in the same manner as in Production Example 1 except that the polyamic acid solution shown in Table 3 was used. The thermal expansion coefficient (CTE), glass transition temperature, dielectric constant, and dielectric tangent of the obtained polyfluoreneimide film 2 to polyaminium film 6 were obtained. Each measurement result is shown in Table 3.
將製作例1~製作例6的結果匯總表示於表3。 The results of Production Examples 1 to 6 are collectively shown in Table 3.
[表3]
[製作例7] [Production Example 7]
在厚度為12μm的電解銅箔的單面(表面粗糙度Rz;1.39μm)上,以硬化後的厚度為約2μm~3μm的方式,均勻地塗佈聚醯胺酸溶液h後,從85℃進行階段性的加熱處理至110℃為止,進行乾燥而除去溶劑。接著,在其上以硬化後的厚度為約42μm~46μm的方式,均勻地塗佈聚醯胺酸溶液b,從85℃進行階段性的加熱處理至110℃為止,而除去溶劑。接著,在其上以硬化後的厚度為約2μm~3μm的方式,均勻地塗佈聚醯胺酸溶液h後,從85℃進行階段性的加熱處理至110℃為止,而除去溶劑。 如此,形成3層的聚醯胺酸層後,從120℃進行階段性的熱處理至320℃為止,完成醯亞胺化,而獲得覆金屬積層體7。對所得的覆金屬積層體7,使用氯化鐵水溶液蝕刻除去銅箔,而獲得厚度為約50μm的聚醯亞胺膜7。所得的聚醯亞胺膜7在3GHz時的介電常數(ε 1)及介電正切(Tan δ 1)分別為3.06、0.0029(E1=0.0051),10GHz時的介電常數及介電正切分別為2.86、0.0036。 In the electrolytic copper foil having a thickness of 12 μ m on one surface; acid polyamide, the thickness after curing was about 2 μ m ~ 3 μ m fashion, uniformly coated (surface roughness Rz 1.39 μ m) After the solution h, stepwise heat treatment was performed from 85 ° C to 110 ° C, followed by drying to remove the solvent. Next, the polyamic acid solution b was uniformly applied so that the thickness after curing was about 42 μm to 46 μm , and the solvent was removed stepwise from 85 ° C. to 110 ° C. to remove the solvent. . Next, the polyamic acid solution h was uniformly applied so that the thickness after curing was about 2 μm to 3 μm , and then stepwise heat treatment was performed from 85 ° C. to 110 ° C. to remove Solvent. In this way, after forming three polyamidic acid layers, stepwise heat treatment was performed from 120 ° C to 320 ° C to complete the imidization to obtain a metal-clad laminate 7. A copper foil was removed from the obtained metal-clad laminate 7 by etching with an aqueous solution of ferric chloride to obtain a polyimide film 7 having a thickness of about 50 μm . The dielectric constant ( ε 1 ) and dielectric tangent (Tan δ 1 ) of the obtained polyfluoreneimide film 7 at 3 GHz were 3.06 and 0.0029 (E 1 = 0.0051), and the dielectric constant and dielectric tangent at 10 GHz They are 2.86 and 0.0036.
[實施例1] [Example 1]
在銅箔2上,以硬化後的厚度為約2μm~3μm的方式,均勻地塗佈聚醯胺酸溶液h後,從85℃進行階段性的加熱處理至110℃為止,進行乾燥而除去溶劑。接著,在其上以硬化後的厚度為約42μm~46μm的方式,均勻地塗佈聚醯胺酸溶液b,從85℃進行階段性的加熱處理至110℃為止,而除去溶劑。接著,在其上以硬化後的厚度為約2μm~3μm的方式,均勻地塗佈聚醯胺酸溶液h後,從85℃進行階段性的加熱處理至110℃為止,而除去溶劑。如此,形成3層的聚醯胺酸層後,從120℃進行階段性的熱處理至320℃為止,完成醯亞胺化,而獲得覆銅積層板1'。在所得的覆銅積層板1'的聚醯亞胺絕緣層側,重疊銅箔1,在溫度為380℃、壓力為6.7MPa的條件下熱壓接15分鐘,而獲得覆銅積層板1。所得的覆銅積層板1中的熱壓接側的銅箔1與聚醯亞胺絕緣層的剝離強度為0.96kN/m。將銅箔1側設為接地面,將銅箔2側設為信號面而進行電路加工,並評價傳輸特性。將其結果表示於圖1。 On the copper foil 2, a polyamic acid solution h was uniformly applied so that the thickness after curing was about 2 μm to 3 μm , and then stepwise heat treatment was performed from 85 ° C to 110 ° C. Dry to remove the solvent. Next, the polyamic acid solution b was uniformly applied so that the thickness after curing was about 42 μm to 46 μm , and the solvent was removed stepwise from 85 ° C. to 110 ° C. to remove the solvent. . Next, the way in which the thickness after curing was about 2 μ m ~ 3 μ m, the uniformly coated polyamide acid solution H, for up to a stepwise heat treatment is from 110 ℃ 85 ℃, removed Solvent. In this way, after forming three polyamidic acid layers, stepwise heat treatment was performed from 120 ° C. to 320 ° C. to complete the imidization to obtain a copper clad laminate 1 ′. On the polyimide insulation layer side of the obtained copper-clad laminated board 1 ', a copper foil 1 was superimposed, and thermocompression-bonded under conditions of a temperature of 380 ° C and a pressure of 6.7 MPa for 15 minutes to obtain a copper-clad laminated board 1. In the obtained copper-clad laminated board 1, the peel strength of the copper foil 1 on the thermocompression bonding side and the polyimide insulation layer was 0.96 kN / m. The copper foil 1 side was used as a ground plane, the copper foil 2 side was used as a signal plane, and circuit processing was performed, and transmission characteristics were evaluated. The results are shown in FIG. 1.
[參考例1] [Reference Example 1]
獲得在市售的液晶聚合物膜1(厚度;50μm)的兩面熱壓 接銅箔4的積層板。將所述積層板中的兩面的銅箔設為接地面與信號面而進行電路加工,並評價傳輸特性。將其結果表示於圖1。 In a commercially available liquid crystal polymer film (thickness; 50 μ m) thermocompression bonding copper foil on both sides of the laminate 4. The copper foil on both sides of the multilayer board was used as a ground plane and a signal plane to perform circuit processing, and the transmission characteristics were evaluated. The results are shown in FIG. 1.
[參考例2] [Reference Example 2]
獲得在市售的液晶聚合物膜2(厚度;50μm)的兩面熱壓接銅箔5的積層板。將所述積層板中的兩面的銅箔設為接地面與信號面而進行電路加工,並評價傳輸特性。將其結果表示於圖1。 A laminate of a commercially available liquid crystal polymer film 2 (thickness: 50 μm ) on both sides of a copper foil 5 by thermal compression bonding was obtained. The copper foil on both sides of the multilayer board was used as a ground plane and a signal plane to perform circuit processing, and the transmission characteristics were evaluated. The results are shown in FIG. 1.
[參考例3] [Reference Example 3]
獲得在厚度為50μm的市售的聚醯亞胺膜(3GHz時的介電常數;>3.1、3GHz時的介電正切;>0.005)的兩面熱壓接銅箔5的積層板。將所述積層板中的兩面的銅箔設為接地面與信號面而進行電路加工,並評價傳輸特性。將其結果表示於圖1。 A commercially available polyimide film having a thickness of 50 μm (dielectric constant at 3 GHz; dielectric tangent at> 3.1 and 3 GHz;> 0.005) was obtained by laminating both sides of a copper foil 5 by thermocompression bonding. The copper foil on both sides of the multilayer board was used as a ground plane and a signal plane to perform circuit processing, and the transmission characteristics were evaluated. The results are shown in FIG. 1.
將實施例1、參考例1~參考例3的結果表示於圖1。根據圖1確認到,實施例1與參考例1的比較中,在1GHz~20GHz的頻率區域中表現出同等以上的傳輸特性。 The results of Example 1, Reference Example 1 to Reference Example 3 are shown in FIG. 1. According to FIG. 1, it is confirmed that, in the comparison between Example 1 and Reference Example 1, the transmission characteristics in the frequency region of 1 GHz to 20 GHz are more than equal.
[實施例2] [Example 2]
在銅箔3上,以硬化後的厚度為約2μm~3μm的方式,均勻地塗佈聚醯胺酸溶液h後,從85℃進行階段性的加熱處理至110℃為止,進行乾燥而除去溶劑。接著,在其上以硬化後的厚度為約42μm~46μm的方式,均勻地塗佈聚醯胺酸溶液b,從85℃進行階段性的加熱處理至110℃為止,而除去溶劑。接著,在其上以硬化後的厚度為約2μm~3μm的方式,均勻地塗佈聚醯胺酸溶液h後,從85℃進行階段性的加熱處理至110℃為止,而除去溶劑。如此,形成3層的聚醯胺酸層後,從120℃進行階段 性的熱處理至320℃為止,完成醯亞胺化,而獲得覆銅積層板2'。在所得的覆銅積層板2'的聚醯亞胺絕緣層側,重疊銅箔1,在溫度為380℃、壓力為6.7MPa的條件下熱壓接15分鐘,而獲得覆銅積層板2。所得的覆銅積層板2中的熱壓接側的銅箔1與聚醯亞胺絕緣層的剝離強度為0.96kN/m。將銅箔3側設為接地面,將銅箔1側設為信號面而進行電路加工,並評價傳輸特性。將其結果表示於圖2。 On the copper foil 3, the polyamic acid solution h was uniformly applied so that the thickness after curing was about 2 μm to 3 μm , and then the heating was performed stepwise from 85 ° C to 110 ° C. Dry to remove the solvent. Next, the polyamic acid solution b was uniformly applied so that the thickness after curing was about 42 μm to 46 μm , and the solvent was removed stepwise from 85 ° C. to 110 ° C. to remove the solvent. . Next, the polyamic acid solution h was uniformly applied so that the thickness after curing was about 2 μm to 3 μm , and then stepwise heat treatment was performed from 85 ° C. to 110 ° C. to remove Solvent. In this way, after forming three polyamidic acid layers, stepwise heat treatment was performed from 120 ° C. to 320 ° C. to complete the imidization to obtain a copper-clad laminated board 2 ′. On the polyimide insulation layer side of the obtained copper-clad laminated board 2 ', a copper foil 1 was superposed, and thermocompression-bonded under conditions of a temperature of 380 ° C and a pressure of 6.7 MPa for 15 minutes to obtain a copper-clad laminated board 2. In the obtained copper-clad laminated board 2, the peel strength of the copper foil 1 on the thermocompression bonding side and the polyimide insulation layer was 0.96 kN / m. The copper foil 3 side was used as a ground plane, the copper foil 1 side was used as a signal plane, and circuit processing was performed, and transmission characteristics were evaluated. The results are shown in FIG. 2.
[實施例3] [Example 3]
以與實施例2相同的方式,獲得覆銅積層板3。將銅箔1側設為接地面,將銅箔3側設為信號面而進行電路加工,並評價傳輸特性。將其結果表示於圖2。 In the same manner as in Example 2, a copper-clad laminated board 3 was obtained. The copper foil 1 side was set as a ground plane, and the copper foil 3 side was set as a signal plane, circuit processing was performed, and transmission characteristics were evaluated. The results are shown in FIG. 2.
[仿真(Simulation)試驗] [Simulation test]
接著,對確認了本發明的效果的仿真試驗的結果進行說明。將聚醯亞胺絕緣層在3GHz時的介電常數及介電正切分別固定為3.0、0.003,將使Rq從0變為1.0時的結果表示於圖2。另外,將聚醯亞胺絕緣層在3GHz時的介電常數及介電正切分別固定為3.4、0.006,將使Rq從0變為1.0時的結果表示於圖3。另外,在仿真試驗中,接地面與信號面的Rq設定為相同。 Next, the results of a simulation test that confirmed the effects of the present invention will be described. The dielectric constant and dielectric tangent of the polyfluorene imide insulating layer at 3 GHz were fixed to 3.0 and 0.003, respectively. The results when Rq was changed from 0 to 1.0 are shown in FIG. 2. In addition, the dielectric constant and dielectric tangent of the polyfluorene imide insulation layer at 3 GHz were fixed to 3.4 and 0.006, respectively, and the results when Rq was changed from 0 to 1.0 are shown in FIG. 3. In the simulation test, the Rq of the ground plane and the signal plane were set to be the same.
仿真(1)及仿真(7):Rq=0μm Simulation (1) and simulation (7): Rq = 0 μ m
仿真(2)及仿真(8):Rq=0.1μm Simulation (2) and simulation (8): Rq = 0.1 μ m
仿真(3)及仿真(9):Rq=0.2μm Simulation (3) and simulation (9): Rq = 0.2 μ m
仿真(4)及仿真(10):Rq=0.3μm Simulation (4) and simulation (10): Rq = 0.3 μm
仿真(5)及仿真(11):Rq=0.5μm Simulation (5) and simulation (11): Rq = 0.5 μ m
仿真(6)及仿真(12):Rq=1.0μm Simulation (6) and simulation (12): Rq = 1.0 μm
將實施例2及實施例3、仿真(1)~仿真(6)的結果表示於圖2,將仿真(7)~仿真(12)的結果表示於圖3。根據圖2確認到,相對於Rq小於0.5μm的實施例2及實施例3、仿真(1)~仿真(4),Rq為0.5μm以上的仿真(5)及仿真(6)中,傳輸損失大。另外,根據圖3確認到,Rq的值越變小,則基本上由於比例關係而傳輸特性變得越良好,根據圖2,在仿真(4)及仿真(5)之間確認到稍有差異。因此認為,具有聚醯亞胺絕緣層的介電特性與銅箔的表面粗糙度Rq的乘數效應(multiplier effect)。 The results of Example 2 and Example 3, simulation (1) to simulation (6) are shown in FIG. 2, and the results of simulation (7) to simulation (12) are shown in FIG. 3. According to FIG. 2 confirmed that, with respect Rq embodiments less than 0.5 μ m 2, and Example 3, the simulation (1) to the simulation (. 4), Rq of not less than 0.5 μ m emulation (5) and simulation (6), Large transmission loss. In addition, it was confirmed from FIG. 3 that the smaller the value of Rq, the better the transmission characteristics basically due to the proportional relationship. According to FIG. 2, a slight difference was confirmed between simulation (4) and simulation (5). . Therefore, it is considered that there is a multiplier effect between the dielectric characteristics of the polyimide insulation layer and the surface roughness Rq of the copper foil.
以上,為了例示而對本發明的實施形態進行了詳細地說明,但本發明並不受所述實施形態制約,可以進行各種變形。 As mentioned above, although the embodiment of this invention was described in detail for illustration, this invention is not limited to the said embodiment, and various deformation | transformation are possible.
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| WO2017014079A1 (en) * | 2015-07-23 | 2017-01-26 | 三井金属鉱業株式会社 | Resin-clad copper foil, copper-clad laminated plate, and printed wiring board |
| JP6825368B2 (en) * | 2016-01-05 | 2021-02-03 | 荒川化学工業株式会社 | Copper-clad laminate and printed wiring board |
| TWI754668B (en) * | 2016-09-05 | 2022-02-11 | 日商荒川化學工業股份有限公司 | Copper clad laminate for flexible printed circuit board and flexible printed circuit board |
| JP7115165B2 (en) * | 2017-09-15 | 2022-08-09 | Jsr株式会社 | Laminates for high-frequency circuits and flexible printed circuit boards |
| KR102686120B1 (en) * | 2018-09-03 | 2024-07-19 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | Metal-clad laminate, adhesive sheet, adhesive polyimide resin composition, and circuit board |
| JP7446741B2 (en) * | 2018-09-28 | 2024-03-11 | 日鉄ケミカル&マテリアル株式会社 | Metal-clad laminates and circuit boards |
| JP7095880B2 (en) * | 2018-10-12 | 2022-07-05 | ユニチカ株式会社 | Polyimide film |
| JP7503289B2 (en) * | 2019-01-21 | 2024-06-20 | ユニチカ株式会社 | Polyimide |
| JP7267591B2 (en) * | 2019-05-22 | 2023-05-02 | ユニチカ株式会社 | polyester imide |
| JP7378122B2 (en) * | 2019-10-23 | 2023-11-13 | ユニチカ株式会社 | polyimide film |
| US20220204697A1 (en) * | 2020-12-31 | 2022-06-30 | Industrial Technology Research Institute | Polymer and resin composition thereof |
| KR102469768B1 (en) * | 2021-10-26 | 2022-11-22 | 도레이첨단소재 주식회사 | Copper clad laminate film, electronic device including the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232553A (en) * | 1993-01-29 | 1994-08-19 | Hitachi Chem Co Ltd | Single-sided flexible copper plated board for lamination |
| CN1720136A (en) * | 2002-12-05 | 2006-01-11 | 株式会社钟化 | Laminate, printed wiring board and method for manufacturing them |
| TW200944370A (en) * | 2007-12-28 | 2009-11-01 | Mitsui Mining & Smelting Co | Copper foil with resin and process for producing copper foil with resin |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5031639B1 (en) | 1969-06-04 | 1975-10-13 | ||
| JP2003306649A (en) * | 2002-04-12 | 2003-10-31 | Kanegafuchi Chem Ind Co Ltd | Adhesive sheet and printed wiring board |
| JP2004189981A (en) * | 2002-12-13 | 2004-07-08 | Kanegafuchi Chem Ind Co Ltd | Thermoplastic polyimide resin material and laminated body, and manufacturing method of printed wiring board |
| JP4872185B2 (en) | 2003-05-06 | 2012-02-08 | 三菱瓦斯化学株式会社 | Metal-clad laminate |
| JP5232386B2 (en) * | 2004-02-25 | 2013-07-10 | 株式会社カネカ | Thermosetting resin composition and use thereof |
| JP2009007551A (en) * | 2007-05-30 | 2009-01-15 | Hitachi Chem Co Ltd | Resin varnish, adhesive layer-coated metal foil, metal-clad laminate, printed wiring board, and multilayer wiring board |
| JP5031639B2 (en) * | 2008-03-31 | 2012-09-19 | 新日鐵化学株式会社 | Flexible copper clad laminate |
| JP2010234638A (en) * | 2009-03-31 | 2010-10-21 | Nippon Steel Chem Co Ltd | Copper-clad laminate and manufacturing method thereof |
| JP5746866B2 (en) * | 2011-01-05 | 2015-07-08 | Jx日鉱日石金属株式会社 | Copper-clad laminate and manufacturing method thereof |
-
2014
- 2014-09-03 JP JP2014178646A patent/JP6403503B2/en active Active
- 2014-09-26 KR KR1020140129485A patent/KR102234045B1/en active Active
- 2014-09-26 CN CN201410505175.8A patent/CN104519657B/en active Active
- 2014-09-26 TW TW103133381A patent/TWI634986B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232553A (en) * | 1993-01-29 | 1994-08-19 | Hitachi Chem Co Ltd | Single-sided flexible copper plated board for lamination |
| CN1720136A (en) * | 2002-12-05 | 2006-01-11 | 株式会社钟化 | Laminate, printed wiring board and method for manufacturing them |
| TW200944370A (en) * | 2007-12-28 | 2009-11-01 | Mitsui Mining & Smelting Co | Copper foil with resin and process for producing copper foil with resin |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6403503B2 (en) | 2018-10-10 |
| CN104519657B (en) | 2018-04-06 |
| KR20150037602A (en) | 2015-04-08 |
| KR102234045B1 (en) | 2021-03-30 |
| TW201511941A (en) | 2015-04-01 |
| JP2015091644A (en) | 2015-05-14 |
| CN104519657A (en) | 2015-04-15 |
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