[go: up one dir, main page]

TWI617702B - Apparatus for manufacturing metallic single crystalline and the operating method thereof - Google Patents

Apparatus for manufacturing metallic single crystalline and the operating method thereof Download PDF

Info

Publication number
TWI617702B
TWI617702B TW105115319A TW105115319A TWI617702B TW I617702 B TWI617702 B TW I617702B TW 105115319 A TW105115319 A TW 105115319A TW 105115319 A TW105115319 A TW 105115319A TW I617702 B TWI617702 B TW I617702B
Authority
TW
Taiwan
Prior art keywords
single crystal
metal precursor
linearly polarized
polarized light
solution
Prior art date
Application number
TW105115319A
Other languages
Chinese (zh)
Other versions
TW201741500A (en
Inventor
廖駿偉
余尚洋
Original Assignee
長庚大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 長庚大學 filed Critical 長庚大學
Priority to TW105115319A priority Critical patent/TWI617702B/en
Publication of TW201741500A publication Critical patent/TW201741500A/en
Application granted granted Critical
Publication of TWI617702B publication Critical patent/TWI617702B/en

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

本發明目的在於提供一種金屬單晶化設備及其運作方法。所述的金屬單晶化設備包含一基板、一單晶金屬前驅物、一光束產生器及、一光功率調節器及一線偏振片。先將該單晶金屬前驅物溶液置於該基板上,再透過該光束產生器及該線偏振片施予一線偏振光至該單晶金屬前驅物上。單晶金屬前驅物在線偏振光照射過程中,會彼此方向性附著式自組裝,並再結晶成晶界較少的單晶金屬材料。 It is an object of the present invention to provide a metal single crystallizing apparatus and a method of operating the same. The metal single crystal device comprises a substrate, a single crystal metal precursor, a beam generator, an optical power regulator and a linear polarizer. The single crystal metal precursor solution is first placed on the substrate, and a linearly polarized light is applied to the single crystal metal precursor through the beam generator and the linear polarizer. During the linearly polarized light irradiation, the single crystal metal precursors are self-assembled in a directional manner and recrystallized into a single crystal metal material having a small grain boundary.

Description

金屬單晶化設備及其運作方法 Metal single crystal equipment and its operation method

本發明係關於一種金屬單晶化設備及其運作方法,特別係指一種利用線偏振光的金屬單晶化設備及其運作方法。 The present invention relates to a metal single crystallizing apparatus and a method of operating the same, and in particular to a metal single crystalizing apparatus using linearly polarized light and a method of operating the same.

固體材料依其內部微粒的排列狀況,可分成單晶、多晶及無晶等型態。在相同分子結構下,不同型態的固體材料將大幅影響其物理特性,例如透光度、硬度及導電度。舉例而言,單晶型態的固體材料內部呈現整齊、規律、平均的排列形式,且僅有少量晶界;因此,單晶型態的固體材料能減少光的散射、電子的碰撞、及孔隙缺陷的數量。而在相似的條件下,多晶型態的固體材料內部則具有較多的晶界,其由多內部排列整齊、外部彼此交錯的局部區域組成,使得整體呈現碎片化;因此,多晶型態的固體材料與單晶型態的固體材料相比之下,通常具有較低的透光度、硬度、光電特性及導電度。而無晶型態的固體材料內部則呈現混亂、無序的排列形式;因此,無序型態的固體材料通常具有較高的電阻,且缺乏明確的熔點等物理性質。 Solid materials can be classified into single crystal, polycrystalline, and amorphous, depending on the arrangement of the internal particles. Under the same molecular structure, different types of solid materials will greatly affect their physical properties, such as transmittance, hardness and electrical conductivity. For example, a single crystal solid material exhibits a neat, regular, average arrangement with only a small number of grain boundaries; therefore, a single crystal solid material can reduce light scattering, electron collision, and pores. The number of defects. Under similar conditions, the polycrystalline solid material has more grain boundaries inside, which consists of a plurality of local regions that are arranged neatly and externally interlaced, so that the whole body is fragmented; therefore, the polymorphic form The solid material generally has a lower transmittance, hardness, photoelectric properties, and electrical conductivity than a solid material of a single crystal type. The solid material inside the amorphous form presents a disordered and disordered arrangement; therefore, the disordered solid material usually has a high electrical resistance and lacks a physical property such as a clear melting point.

在產業應用上,三種型態的固體材料各自有適當的應用領域。但隨著半導體圖案及電路元件尺寸降至奈米級,具有低電阻特性的材料需求不斷增加,使得單晶固體材料的逐漸受到重視。目前,具有前述低 電阻特性的單晶奈米線等固體材料已被應用在場效電晶體、記憶體裝置、太陽能電池、感測器、發光二極體等產業中。唯自然界的固體材料多為多晶及無晶型態,極少有自然形成的單晶固體材料,這使得單晶奈米線極難取得且價格高昂。 In industrial applications, each of the three types of solid materials has suitable applications. However, as the size of semiconductor patterns and circuit components has dropped to the nanometer level, the demand for materials having low resistance characteristics has been increasing, and the single crystal solid materials have been gradually taken seriously. Currently, with the aforementioned low Solid materials such as single crystal nanowires having electrical resistance characteristics have been used in industries such as field effect transistors, memory devices, solar cells, sensors, and light-emitting diodes. Only the solid materials in nature are mostly polycrystalline and amorphous, and there are few naturally occurring single crystal solid materials, which makes single crystal nanowires extremely difficult to obtain and expensive.

在人工合成的方法中,目前已知可藉由電場來控制銀奈米線的生長方向來生產單晶銀材料;當對奈米銀溶液施加電場時,奈米銀會受到電場作用而在溶液中電泳並指向性附著,唯該製程難以用於大量生產。 而MOCVD、PVD及VLS等製程技術雖可用於大量生產單晶固體材料,然其需在500℃高溫及高壓環境下完成,且產生的晶界較多並耗能甚鉅。此外,透過濺鍍方式生產單晶固體材料同樣需要在嚴苛的環境條件下完成,且產出之固體材料尚須經後處理,方能製造出可應用在半導體等精密部件的奈米級材料。 In the synthetic method, it is currently known that the growth direction of the silver nanowire can be controlled by an electric field to produce a single crystal silver material; when an electric field is applied to the nano silver solution, the nano silver is subjected to an electric field in the solution. Electrophoresis and directional adhesion, but the process is difficult to use for mass production. While MOCVD, PVD and VLS process technologies can be used to mass produce monocrystalline solid materials, they need to be completed at 500 ° C high temperature and high pressure environment, and produce more grain boundaries and consume a lot of energy. In addition, the production of single crystal solid materials by sputtering also needs to be completed under severe environmental conditions, and the solid materials produced must be post-treated to produce nano-scale materials that can be applied to precision parts such as semiconductors. .

上述現有的人工合成方法各具有不同缺陷。鑒此,目前仍缺乏一個簡單的金屬材料單晶化的設備與方法;此外,目前亦缺乏一個可將現成金屬製品單晶化的設備與方法。 The above existing synthetic methods each have different drawbacks. In view of this, there is still a lack of a simple equipment and method for single-crystallizing metallic materials; in addition, there is currently no equipment and method for single-crystalizing ready-made metal products.

為改善上述問題,本發明至少一種金屬單晶化設備及其運作方法,特別係指一種利用線偏振光的金屬單晶化設備及其運作方法。該金屬單晶化設備及其運作方法利用線偏振光將單晶金屬前驅物轉換成單晶金屬。 In order to improve the above problems, at least one metal single crystallizing apparatus and method of operating the same according to the present invention, in particular, a metal single crystalizing apparatus using linearly polarized light and a method of operating the same. The metal single crystallizing apparatus and its operation method convert linear crystal light into a single crystal metal using linearly polarized light.

本發明至少一實施例係關於一種金屬單晶化設備。所述的金屬單晶化設備包含一基板、一單晶金屬前驅物、一光束產生器以及一線偏 振片。其中,單晶金屬前驅物係置於基板上,且單晶金屬前驅物與一溶液物理接觸。當光束產生器啟動後,光束產生器的光束會經過線偏振片後照射於單晶金屬前驅物上。 At least one embodiment of the invention is directed to a metal single crystallizing apparatus. The metal single crystal device comprises a substrate, a single crystal metal precursor, a beam generator and a line offset Vibration plate. Wherein the single crystal metal precursor is placed on the substrate, and the single crystal metal precursor is in physical contact with a solution. When the beam generator is activated, the beam of the beam generator passes through the linear polarizer and is illuminated onto the single crystal metal precursor.

本發明至少一實施例係關於一種金屬單晶化方法。所述的金屬單晶化方法始於放置一單晶金屬前驅物至一基板上。其中,單晶金屬前驅物與一溶液物理接觸。接著施予一線偏振光至該單晶金屬前驅物上直到滿足一預定條件為止。 At least one embodiment of the invention is directed to a method of metal single crystal. The metal single crystalization process begins by placing a single crystal metal precursor onto a substrate. Wherein the single crystal metal precursor is in physical contact with a solution. A linearly polarized light is then applied to the single crystal metal precursor until a predetermined condition is met.

本發明至少一實施例的金屬單晶化設備具有設備需求低的優點,其使用線偏振光即可將單晶奈米前驅物轉換成單晶金屬材料。 The metal single crystal device of at least one embodiment of the present invention has the advantage of low equipment requirements, which can convert a single crystal nano precursor into a single crystal metal material using linearly polarized light.

本發明至少一實施例的金屬單晶化設備具有環境溫和的優點,其在一般室內環境下即可將單晶奈米前驅物轉換成單晶金屬材料。 The metal single-crystallizing apparatus according to at least one embodiment of the present invention has the advantage of being mild in environment, and can convert a single crystal nano precursor into a single crystal metal material in a general indoor environment.

本發明至少一實施例的金屬單晶化方法具有反應快速的優點,其在約40分鐘內即可將單晶奈米前驅物轉換成單晶金屬材料。 The metal single-crystalization method of at least one embodiment of the present invention has the advantage of rapid reaction, which converts a single crystal nano precursor into a single crystal metal material in about 40 minutes.

本發明至少一實施例的金屬單晶化方法具有製程簡短的優點,其使用少數步驟即可將單晶奈米前驅物轉換成單晶金屬材料。 The metal single-crystalization method of at least one embodiment of the present invention has the advantage of a short process which converts a single crystal nano precursor into a single crystal metal material using a few steps.

本發明至少一實施例的金屬單晶化方法具有低耗能的優點,其使用低能量線偏振光即可將單晶奈米前驅物轉換成單晶金屬材料。 The metal single-crystalization method of at least one embodiment of the present invention has the advantage of low energy consumption, which can convert a single crystal nano precursor into a single crystal metal material using low-energy linearly polarized light.

本發明至少一實施例的金屬單晶化方法具有應用廣泛的優點,其可將奈米金屬材料或現成金屬製品轉換成單晶金屬。 The metal single-crystalization method of at least one embodiment of the present invention has a wide range of advantages in that it can convert a nano metal material or a ready-made metal product into a single crystal metal.

本發明至少一實施例可利用線偏振光誘導小單元金屬顆粒導向性附著生成大單元金屬顆粒,其有助於生產兼具高透光及高導電度的材料,並有助於製做下一代積體光路的電漿子波導。 At least one embodiment of the present invention can utilize linearly polarized light to induce small cell metal particles to be preferentially attached to form large unit metal particles, which contribute to the production of materials having high light transmittance and high conductivity, and contribute to the next generation. A plasmonic waveguide of an integrated optical path.

101、201‧‧‧光束產生器 101, 201‧‧‧ Beam generator

103、203‧‧‧線偏振片 103, 203‧‧‧ linear polarizer

105、205‧‧‧單晶金屬前驅物 105, 205‧‧‧ single crystal metal precursor

107、207‧‧‧基板 107, 207‧‧‧ substrate

109、209‧‧‧線偏振光 109, 209‧‧‧ linearly polarized light

211‧‧‧溶液 211‧‧‧solution

213‧‧‧供應管 213‧‧‧Supply tube

215‧‧‧補充液 215‧‧‧ replenisher

217‧‧‧外壁 217‧‧‧ outer wall

221‧‧‧光學組件 221‧‧‧Optical components

圖1為本發明部分實施例之金屬單晶化設備示意圖。 1 is a schematic view of a metal single crystallizing apparatus according to some embodiments of the present invention.

圖2為本發明部分實施例之金屬單晶化設備示意圖。 2 is a schematic view of a metal single crystallizing apparatus according to some embodiments of the present invention.

圖3為本發明部分實施例之金屬單晶化方法流程圖。 3 is a flow chart of a method for metal single crystal formation according to some embodiments of the present invention.

圖4為本發明部分實施例之金屬單晶化方法流程圖。 4 is a flow chart of a method for metal single crystal formation according to some embodiments of the present invention.

圖5A-圖5E為本發明部分實施例之場發射式掃描電子顯微鏡(FE-SEM)圖。 5A-5E are field emission scanning electron microscope (FE-SEM) images of some embodiments of the present invention.

本發明至少一實施例係關於一種金屬單晶化設備。所述的金屬單晶化設備包含一基板、一單晶金屬前驅物、一光束產生器以及一線偏振片。其中,單晶金屬前驅物係置於基板上,且單晶金屬前驅物與一溶液物理接觸。當光束產生器啟動後,光束產生器的光束會經過線偏振片後照射於單晶金屬前驅物。 At least one embodiment of the invention is directed to a metal single crystallizing apparatus. The metal single crystallizing apparatus comprises a substrate, a single crystal metal precursor, a beam generator, and a linear polarizing plate. Wherein the single crystal metal precursor is placed on the substrate, and the single crystal metal precursor is in physical contact with a solution. When the beam generator is activated, the beam of the beam generator passes through the linear polarizer and is illuminated by the single crystal metal precursor.

本發明至少一實施例係關於一種金屬單晶化設備。所述的金屬單晶化設備包含一基板、一單晶金屬前驅物、一光束產生器、一光功率調節器以及一線偏振片。其中,單晶金屬前驅物係置於基板上,且單晶金屬前驅物與一溶液物理接觸。當光束產生器啟動後,光束產生器的光束會經過光功率調節器與線偏振片後照射於單晶金屬前驅物。 At least one embodiment of the invention is directed to a metal single crystallizing apparatus. The metal single crystal device comprises a substrate, a single crystal metal precursor, a beam generator, an optical power regulator, and a linear polarizer. Wherein the single crystal metal precursor is placed on the substrate, and the single crystal metal precursor is in physical contact with a solution. When the beam generator is activated, the beam of the beam generator is irradiated to the single crystal metal precursor through the optical power conditioner and the linear polarizer.

本發明至少一實施例係關於一種金屬單晶化方法。所述的金屬單晶化方法始於放置一單晶金屬前驅物至一基板上。其中,單晶金屬前驅物與一溶液物理接觸。接著施予一線偏振光至該單晶金屬前驅物上直到滿足一預定條件為止。 At least one embodiment of the invention is directed to a method of metal single crystal. The metal single crystalization process begins by placing a single crystal metal precursor onto a substrate. Wherein the single crystal metal precursor is in physical contact with a solution. A linearly polarized light is then applied to the single crystal metal precursor until a predetermined condition is met.

圖1為本發明部分實施例之金屬單晶化設備示意圖。金屬單晶化設備的結構包含光束產生器101、線偏振片103、單晶金屬前驅物105以及基板107。其中,單晶金屬前驅物105放置於基板107及光束產生器101之間101,而線偏振片103又放置於單晶金屬前驅物105與光束產生器101之間。當光束產生器101啟動後可產生一道光束,並在線偏振片103處轉換成線偏振光103。光束在被轉換成線偏振光109後,則會進一步投射至基板107上的單晶金屬前驅物105上。 1 is a schematic view of a metal single crystallizing apparatus according to some embodiments of the present invention. The structure of the metal single crystal device includes a beam generator 101, a linear polarizing plate 103, a single crystal metal precursor 105, and a substrate 107. The single crystal metal precursor 105 is placed between the substrate 107 and the beam generator 101, and the linear polarizer 103 is placed between the single crystal metal precursor 105 and the beam generator 101. When the beam generator 101 is activated, a beam of light is generated and converted to linearly polarized light 103 at the line polarizing plate 103. After being converted into linearly polarized light 109, the light beam is further projected onto the single crystal metal precursor 105 on the substrate 107.

圖1中的基板107係用以乘載單晶金屬前驅物105。所述的基板101可為玻璃基板、石英基板、矽基板或塑膠基板等襯底。所述的塑膠基板可為由醇酸樹脂、烯丙基酯、苯并環丁烯、丁二烯-苯乙烯、纖維素、乙酸纖維素、環氧化物、環氧聚合物、乙烯-氯三氟乙烯、乙烯-四氟乙烯、纖維玻璃增強之塑膠、氟碳聚合物、六氟丙烯二氟亞乙烯共聚物、高密度聚乙烯、聚對二甲苯、聚醯胺、聚醯亞胺、聚芳醯胺、聚二甲基矽氧烷、聚醚碸、聚乙烯、聚萘二甲酸乙二酯、聚對苯二甲酸乙二酯、聚酮、聚甲基丙烯酸甲酯、聚丙烯、聚苯乙烯、聚碸、聚四氟乙烯、聚胺基甲酸酯、聚氯乙烯、聚矽氧橡膠、聚矽氧。較佳的基板材料係聚對苯二甲酸乙二酯、聚醯亞胺、及聚萘二甲酸乙二酯所組成的群。 The substrate 107 in FIG. 1 is used to carry a single crystal metal precursor 105. The substrate 101 may be a substrate such as a glass substrate, a quartz substrate, a germanium substrate or a plastic substrate. The plastic substrate may be composed of alkyd resin, allyl ester, benzocyclobutene, butadiene-styrene, cellulose, cellulose acetate, epoxide, epoxy polymer, ethylene-chlorine Vinyl fluoride, ethylene-tetrafluoroethylene, fiberglass reinforced plastic, fluorocarbon polymer, hexafluoropropylene difluoroethylene copolymer, high density polyethylene, parylene, polyamide, polyimine, poly Linalin, polydimethyloxane, polyether oxime, polyethylene, polyethylene naphthalate, polyethylene terephthalate, polyketone, polymethyl methacrylate, polypropylene, poly Styrene, polyfluorene, polytetrafluoroethylene, polyurethane, polyvinyl chloride, polyoxyethylene rubber, polyoxyn oxide. Preferred substrate materials are a group of polyethylene terephthalate, polyimide, and polyethylene naphthalate.

圖1中的單晶金屬前驅物105可為金屬奈米粒子、金屬奈米桿或多晶金屬材料;其中,單晶金屬前驅物105為具大量自由電子的材質,如金、銀、銅、鋁或其組合物。本實施例用詞「金屬奈米粒子」實質上包含複數個奈米粒子,而用詞「金屬奈米桿」實質上包含複數個奈米桿。當單晶金屬前驅物105經線偏振光109照射後,會聚合成一至數個單晶金屬;此 外,單晶金屬前驅物105經線偏振光109轉換成一至數個單晶金屬單晶金屬後,其總體積大致與轉換前相同,但其總電阻及總晶界數量會下降。 The single crystal metal precursor 105 in FIG. 1 may be a metal nanoparticle, a metal nanorod or a polycrystalline metal material; wherein the single crystal metal precursor 105 is a material having a large amount of free electrons, such as gold, silver, copper, Aluminum or a combination thereof. The term "metal nanoparticle" in this embodiment substantially includes a plurality of nanoparticles, and the term "metal nanorod" substantially includes a plurality of nanorods. When the single crystal metal precursor 105 is irradiated by the linearly polarized light 109, it is polymerized into one to several single crystal metals; Further, after the single crystal metal precursor 105 is converted into one to several single crystal metal single crystal metals by the linearly polarized light 109, the total volume thereof is substantially the same as that before the conversion, but the total resistance and the total grain boundary number are decreased.

圖1中的光束產生器101係用以產生一光束,而光束產生器101與線偏振片103則可共同產生線偏振光109。在部分較佳的實施例中,所述的線偏振光109照度小於1000mW/cm2;其中,線偏振光109照度以小於150mW/cm2為佳;而線偏振光109照度又以小於100mW/cm2為更佳。在部分較佳的實施例中,所述的線偏振光109介於紫外光至紅外光之間;其中,線偏振光109波長較佳介於380nm至2400nm之間,更佳為介於600nm至1400nm之間。在部分較佳的實施例中,線偏振光109又以單波長為更佳。在部分較佳的實施例中,所述的線偏振光109為雷射光;其中,線偏振光109又以連續波雷射光為更佳。 The beam generator 101 of Fig. 1 is used to generate a light beam, and the beam generator 101 and the linear polarizing plate 103 can collectively produce linearly polarized light 109. In some preferred embodiments, the linearly polarized light 109 has an illuminance of less than 1000 mW/cm 2 ; wherein the linearly polarized light 109 has an illuminance of less than 150 mW/cm 2 ; and the linearly polarized light 109 has an illuminance of less than 100 mW/ Cm 2 is better. In some preferred embodiments, the linearly polarized light 109 is between ultraviolet and infrared light; wherein the linearly polarized light 109 preferably has a wavelength between 380 nm and 2400 nm, more preferably between 600 nm and 1400 nm. between. In some preferred embodiments, the linearly polarized light 109 is again preferably a single wavelength. In some preferred embodiments, the linearly polarized light 109 is laser light; wherein the linearly polarized light 109 is further preferably continuous wave laser light.

圖2為本發明部分實施例之金屬單晶化設備示意圖。金屬單晶化設備的結構包含光束產生器201、光學組件221、線偏振片203、單晶金屬前驅物205、基板207、溶液211以及供應管213。其中,單晶金屬前驅物205與溶液211物理接觸,並共同放置於基板207上。光束產生器201的輸出口則朝向基板207,而線偏振片203又放置於單晶金屬前驅物205與光束產生器201之間。當光束產生器201啟動後,產生的光束會行經光學組件221並在線偏振片203處轉換成線偏振光109,並進一步曝射在單晶金屬前驅物205及溶液211上。圖2的供應管213設置於基板207附近,以供應補充液215至溶液211中。 2 is a schematic view of a metal single crystallizing apparatus according to some embodiments of the present invention. The structure of the metal single crystallizing apparatus includes a beam generator 201, an optical component 221, a linear polarizing plate 203, a single crystal metal precursor 205, a substrate 207, a solution 211, and a supply pipe 213. The single crystal metal precursor 205 is in physical contact with the solution 211 and is co-located on the substrate 207. The output of the beam generator 201 is directed toward the substrate 207, which in turn is placed between the single crystal metal precursor 205 and the beam generator 201. When the beam generator 201 is activated, the resulting beam passes through the optical assembly 221 and is converted to linearly polarized light 109 at the in-line polarizer 203 and further exposed to the single crystal metal precursor 205 and solution 211. The supply pipe 213 of FIG. 2 is disposed near the substrate 207 to supply the replenishing liquid 215 into the solution 211.

圖2的單晶金屬前驅物205與溶液211物理接觸。在部分實施例中,單晶金屬前驅物105以金屬奈米粒子或金屬奈米桿的形式分散於溶液211中;例如,透過氧化還原反應產生的奈米銀溶液或金奈米桿溶液。在部 分實施例中,單晶金屬前驅物105以多晶金屬材料的形式與溶液211物理接觸;例如,浸於水溶液中的金屬製品,其中所述的金屬製品可為沉積於電路元件上的金導線。此外,在較佳實施例中,所述的溶液比熱容大於3000J/kg.K;而在更佳的實施例中,所述的溶液比熱容大於4000J/kg.K,例如水;其中,所述的溶液以水為佳。 The single crystal metal precursor 205 of FIG. 2 is in physical contact with the solution 211. In some embodiments, the single crystal metal precursor 105 is dispersed in the solution 211 in the form of metal nanoparticles or a metal nanorod; for example, a nanosilver solution or a gold nanorod solution produced by a redox reaction. In the department In a separate embodiment, the single crystal metal precursor 105 is in physical contact with the solution 211 in the form of a polycrystalline metal material; for example, a metal article immersed in an aqueous solution, wherein the metal article can be a gold wire deposited on a circuit component . In addition, in a preferred embodiment, the specific heat capacity of the solution is greater than 3000 J/kg. K; and in a more preferred embodiment, the specific heat capacity of the solution is greater than 4000 J/kg. K, such as water; wherein the solution is preferably water.

圖2的供應管213連接一供應源(未顯示於圖式),用以提供補充液215至溶液211中。在部分實施例中,補充液215為單晶金屬前驅物105與溶液211的混和物,例如奈米金溶液或銀奈米桿溶液。在較佳的實施例中,單晶金屬前驅物105於溶液211中的濃度為1mg/kg至150mg/kg之間;在更佳的實施例中,單晶金屬前驅物105於溶液211中的濃度為3mg/kg至120mg/kg之間。然而,在部分實施例中,補充液215僅為溶液211,且補充液215中不包含單晶金屬前驅物105。又在部分實施例中,金屬單晶化設備並不包含供應管213及補充液215。 The supply tube 213 of FIG. 2 is coupled to a supply source (not shown) for providing makeup fluid 215 to solution 211. In some embodiments, the replenishing solution 215 is a mixture of the single crystal metal precursor 105 and the solution 211, such as a nanogold solution or a silver nanorod solution. In a preferred embodiment, the concentration of single crystal metal precursor 105 in solution 211 is between 1 mg/kg and 150 mg/kg; in a more preferred embodiment, single crystal metal precursor 105 is in solution 211. The concentration is between 3 mg/kg and 120 mg/kg. However, in some embodiments, the replenishing liquid 215 is only the solution 211, and the single crystal metal precursor 105 is not contained in the replenishing liquid 215. In still other embodiments, the metal single crystallizing apparatus does not include the supply tube 213 and the replenishing liquid 215.

圖2的外壁217係用以減少雜質及外力,以避免單晶金屬前驅物105在轉換成單晶金屬的過程受到干擾;然而,外壁217並不以氣密為要件。由於線偏振光209在常溫、常壓、非密閉的環境下,無須額外的實驗室設備或生產設備即可將單晶金屬前驅物105轉換成單晶金屬,因此在部分其他實施例中,金屬單晶化設備並不包含外壁217。 The outer wall 217 of Fig. 2 is used to reduce impurities and external forces to prevent the single crystal metal precursor 105 from being disturbed in the process of converting into a single crystal metal; however, the outer wall 217 is not airtight. Since the linearly polarized light 209 can convert the single crystal metal precursor 105 into a single crystal metal without additional laboratory equipment or production equipment in a normal temperature, normal pressure, or non-closed environment, in some other embodiments, the metal The single crystallizing apparatus does not include the outer wall 217.

圖2的部分實施例中,光束產生器201與線偏振片203之間可進一步設置習知之光學組件221,使光束產生器201產生的光束先行經光學組件221後再射至線偏振片203上。所述的光學組件221係選自光功率調節器 (optical power regulator),光束整形器(beam shaper)、光擴束器(beam expander)及其組合所組成的群。 In some embodiments of FIG. 2, a conventional optical component 221 may be further disposed between the beam generator 201 and the linear polarizing plate 203, so that the light beam generated by the beam generator 201 passes through the optical component 221 and then onto the linear polarizing plate 203. . The optical component 221 is selected from an optical power regulator (optical power regulator), a group of beam shapers, beam expanders, and combinations thereof.

圖3為本發明部分實施例之金屬單晶化方法流程圖。圖3的金屬單晶化方法起始於提供一基板,並放置一單晶金屬前驅物至該基板上;其中,所述的單晶金屬前驅物與一溶液物理接觸。接著,施於一線偏振光於該單晶金屬前驅物,直到一預定條件被滿足後再停止施與該線偏振光。 3 is a flow chart of a method for metal single crystal formation according to some embodiments of the present invention. The metal single crystallization process of Figure 3 begins by providing a substrate and placing a single crystal metal precursor onto the substrate; wherein the single crystal metal precursor is in physical contact with a solution. Next, a linearly polarized light is applied to the single crystal metal precursor until the predetermined condition is satisfied, and then the linearly polarized light is stopped.

圖3的金屬單晶化方法可在一般開放性環境下實施,較佳為在一般室內環境下實施。在圖3部分實施例中,金屬單晶化方法的實施過程中不使用上述器材以外之溫度調節器(例如,冷媒、空調、電熱板、火源、致冷晶片)、氣壓調節器(例如,真空槽、加壓槽)、電場產生器(例如,正、負電極)、實驗用磁場產生器(例如,永久磁鐵、電磁鐵)於該單晶金屬前驅物上。 The metal single crystallizing process of Fig. 3 can be carried out in a generally open environment, preferably in a general indoor environment. In some embodiments of FIG. 3, a temperature regulator other than the above-mentioned equipment (for example, a refrigerant, an air conditioner, a hot plate, a fire source, a refrigerant chip), a gas pressure regulator (for example, A vacuum chamber, a pressurized tank, an electric field generator (for example, positive and negative electrodes), an experimental magnetic field generator (for example, a permanent magnet, an electromagnet) are placed on the single crystal metal precursor.

圖3的該基板可為玻璃基板、石英基板、矽基板或塑膠基板等襯底。所述的塑膠基板可為由醇酸樹脂、烯丙基酯、苯并環丁烯、丁二烯-苯乙烯、纖維素、乙酸纖維素、環氧化物、環氧聚合物、乙烯-氯三氟乙烯、乙烯-四氟乙烯、纖維玻璃增強之塑膠、氟碳聚合物、六氟丙烯二氟亞乙烯共聚物、高密度聚乙烯、聚對二甲苯、聚醯胺、聚醯亞胺、聚芳醯胺、聚二甲基矽氧烷、聚醚碸、聚乙烯、聚萘二甲酸乙二酯、聚對苯二甲酸乙二酯、聚酮、聚甲基丙烯酸甲酯、聚丙烯、聚苯乙烯、聚碸、聚四氟乙烯、聚胺基甲酸酯、聚氯乙烯、聚矽氧橡膠、聚矽氧。較佳的基板材料係聚對苯二甲酸乙二酯、聚醯亞胺、及聚萘二甲酸乙二酯所組成的群。 The substrate of FIG. 3 may be a substrate such as a glass substrate, a quartz substrate, a germanium substrate, or a plastic substrate. The plastic substrate may be composed of alkyd resin, allyl ester, benzocyclobutene, butadiene-styrene, cellulose, cellulose acetate, epoxide, epoxy polymer, ethylene-chlorine Vinyl fluoride, ethylene-tetrafluoroethylene, fiberglass reinforced plastic, fluorocarbon polymer, hexafluoropropylene difluoroethylene copolymer, high density polyethylene, parylene, polyamide, polyimine, poly Linalin, polydimethyloxane, polyether oxime, polyethylene, polyethylene naphthalate, polyethylene terephthalate, polyketone, polymethyl methacrylate, polypropylene, poly Styrene, polyfluorene, polytetrafluoroethylene, polyurethane, polyvinyl chloride, polyoxyethylene rubber, polyoxyn oxide. Preferred substrate materials are a group of polyethylene terephthalate, polyimide, and polyethylene naphthalate.

圖3的該單晶金屬前驅物可為金屬奈米粒子、金屬奈米桿或多晶金屬材料;其中,該單晶金屬前驅物為具大量自由電子的材質,如金、銀、銅、鋁或其組合物。本實施例用詞「金屬奈米粒子」實質上包含複數個奈米粒子,而用詞「金屬奈米桿」實質上包含複數個奈米桿。當該單晶金屬前驅物經該線偏振光照射後,會聚合成一至數個單晶金屬;此外,該單晶金屬前驅物經該線偏振光轉換成總體積相近的一至數個單晶金屬單晶金屬後,其總體積大致與轉換前相同,但其總電阻及總晶界數量會下降。 The single crystal metal precursor of FIG. 3 may be a metal nanoparticle, a metal nanorod or a polycrystalline metal material; wherein the single crystal metal precursor is a material having a large amount of free electrons, such as gold, silver, copper, aluminum. Or a composition thereof. The term "metal nanoparticle" in this embodiment substantially includes a plurality of nanoparticles, and the term "metal nanorod" substantially includes a plurality of nanorods. When the single crystal metal precursor is irradiated by the linearly polarized light, it is polymerized into one to several single crystal metals; in addition, the single crystal metal precursor is converted into one to several single crystal metal sheets having a similar total volume by the linearly polarized light. After the crystalline metal, its total volume is approximately the same as before the conversion, but its total resistance and total grain boundary number will decrease.

圖3的該線偏振光照度較佳應小於150mW/cm2,其中照度又以介於0-100mW/cm2為佳,並以照度介於5-50mW/cm2之間為更佳。圖3的該線偏振光介於紫外光至紅外光之間,較佳介於可見光至近紅外光之間,其中該線偏振光又以介於紅光至近紅外光之間為更佳;圖3的該線偏振光波長範圍為380nm至2400nm之間,其中波長又以600nm至1400nm之間為更佳。 圖3的該線偏振光較佳應為雷射,其中更佳應為連續波雷射。 FIG 3 the linearly polarized light illumination is preferably less than 150mW / cm 2, which again is between the illuminance 0-100mW / cm 2 preferably, and illuminance is more preferably between 2 5-50mW / cm. The linearly polarized light of FIG. 3 is between ultraviolet light and infrared light, preferably between visible light and near infrared light, wherein the linearly polarized light is more preferably between red light and near infrared light; The linearly polarized light has a wavelength in the range of 380 nm to 2400 nm, and the wavelength is more preferably between 600 nm and 1400 nm. The linearly polarized light of Figure 3 should preferably be a laser, more preferably a continuous wave laser.

圖3的該單晶金屬前驅物與該溶液物理接觸。在部分實施例中,該單晶金屬前驅物以金屬奈米粒子或金屬奈米桿的形式分散於該溶液中;例如,透過氧化還原反應產生的奈米銀溶液或金奈米桿溶液。在部分實施例中,該單晶金屬前驅物以多晶金屬材料的形式與該溶液物理接觸;例如,沉積於基板上的金導線,且所述的金導線浸在水溶液中。此外,在較佳實施例中,該溶液比熱容大於3000J/kg.K;而在更佳的實施例中,該溶液比熱容大於4000J/kg.K,例如水。 The single crystal metal precursor of Figure 3 is in physical contact with the solution. In some embodiments, the single crystal metal precursor is dispersed in the solution in the form of metal nanoparticles or a metal nanorod; for example, a nanosilver solution or a gold nanorod solution produced by a redox reaction. In some embodiments, the single crystal metal precursor is in physical contact with the solution in the form of a polycrystalline metal material; for example, a gold wire deposited on a substrate, and the gold wire is immersed in an aqueous solution. In addition, in the preferred embodiment, the specific heat capacity of the solution is greater than 3000 J/kg. K; and in a more preferred embodiment, the specific heat capacity of the solution is greater than 4000 J/kg. K, such as water.

圖3的該預定條件在部分實施例中為一曝射時間,而該曝射時間為該線偏振光施予於該單晶金屬前驅物的時間長度;在較佳的實施例 中,該曝射時間為10分鐘至60分鐘之間;該曝射時間又以30分鐘至60分鐘為更佳。圖3的該預定條件在部分實施例中為該溶液的當前體積,且當前體積的單位為體積百分比,而比較基礎為該溶液受該線偏振光照射前的原始體積;在較佳的實施例中,當前體積為原始體積的5%-100%,更佳為5%-60%,又更佳為10%-40%。圖3的該預定條件在部分實施例中為一溶液溫度,而該溶液溫度為該溶液的當前溫度;在較佳的實施例中,該溶液溫度低於100℃,更佳為20℃至95℃之間。 The predetermined condition of FIG. 3 is an exposure time in some embodiments, and the exposure time is a length of time during which the linearly polarized light is applied to the single crystal metal precursor; in a preferred embodiment The exposure time is between 10 minutes and 60 minutes; the exposure time is preferably 30 minutes to 60 minutes. The predetermined condition of FIG. 3 is the current volume of the solution in some embodiments, and the unit of the current volume is a volume percentage, and the basis of comparison is the original volume of the solution before being irradiated by the linearly polarized light; in a preferred embodiment The current volume is 5%-100% of the original volume, more preferably 5%-60%, and still more preferably 10%-40%. The predetermined condition of Figure 3 is a solution temperature in some embodiments, and the solution temperature is the current temperature of the solution; in a preferred embodiment, the solution temperature is less than 100 ° C, more preferably 20 ° C to 95. Between °C.

圖3的部分實施例中,進一步包含一供應步驟。所述的供應步驟係指供應一補充液至該單晶金屬前驅物。在部分實施例中,該補充液為該單晶金屬前驅物與該溶液的混和物,例如奈米金溶液或銀奈米桿溶液。在較佳的實施例中,該單晶金屬前驅物於該溶液中的濃度維持在為1mg/kg至500mg/kg之間;在更佳的實施例中,該單晶金屬前驅物於該溶液中的濃度維持在為3mg/kg至120mg/kg之間;在又一更佳的實施例中,該單晶金屬前驅物於該溶液中的濃度維持在為3mg/kg至30mg/kg之間。然而,在部分實施例中,該補充液僅為該溶液,且該補充液中不包含該單晶金屬前驅物。 In some embodiments of FIG. 3, a supply step is further included. The supplying step means supplying a replenishing liquid to the single crystal metal precursor. In some embodiments, the replenisher is a mixture of the single crystal metal precursor and the solution, such as a nano gold solution or a silver nanorod solution. In a preferred embodiment, the concentration of the single crystal metal precursor in the solution is maintained between 1 mg/kg and 500 mg/kg; in a more preferred embodiment, the single crystal metal precursor is in the solution. The concentration in the medium is maintained between 3 mg/kg and 120 mg/kg; in still another more preferred embodiment, the concentration of the single crystal metal precursor in the solution is maintained between 3 mg/kg and 30 mg/kg. . However, in some embodiments, the replenishing liquid is only the solution, and the single crystal metal precursor is not contained in the replenishing liquid.

圖3的部分實施例中,進一步包含一乾燥步驟。所述的乾燥步驟係指乾燥該溶液,且該乾燥步驟係於停止施與該線偏振光後實施。其中,該乾燥步驟可為風乾或陰乾,以去除與單晶金屬前驅物及單晶金屬物理接觸之該溶液。在部分較佳實施例中,該乾燥步驟中,單晶金屬的溫度低於100℃,更佳為低於80℃,又更佳為低於40℃。 In some embodiments of Figure 3, a drying step is further included. The drying step refers to drying the solution, and the drying step is performed after the application of the linearly polarized light is stopped. Wherein, the drying step may be air drying or dry drying to remove the solution in physical contact with the single crystal metal precursor and the single crystal metal. In some preferred embodiments, the temperature of the single crystal metal in the drying step is less than 100 ° C, more preferably less than 80 ° C, and still more preferably less than 40 ° C.

圖3的部分實施例中,該單晶金屬前驅物為金屬奈米粒子或金屬奈米桿,且該施予一線偏振光於該單晶金屬前驅物的步驟進一步包含兩階段。第一階段為轉換該單晶金屬前驅物成為一多晶金屬材料,第二階段為轉換該多晶金屬材料為一單晶金屬材料。 In some embodiments of FIG. 3, the single crystal metal precursor is a metal nanoparticle or a metal nanorod, and the step of applying a linearly polarized light to the single crystal metal precursor further comprises two stages. The first stage is to convert the single crystal metal precursor into a polycrystalline metal material, and the second stage is to convert the polycrystalline metal material into a single crystal metal material.

以奈米銀水溶液為例。在一實施例中,奈米銀水溶液在第一階段照射線偏振光後,奈米銀水溶液中的奈米銀粒子會產生表面電漿子。 其中,表面電漿子將導致相鄰的兩奈米銀粒子發生表面電漿子耦合現象,進而生成相互作用之光力及光力矩。在光力及光力矩的作用下,相鄰的奈米銀粒子則會聚集並導向性附著成線狀聚合物,其附著方向與線偏振光的偏振方向垂直。此外,表面電漿子效應在兩奈米銀粒子的接觸面會進一步被轉換成熱能,使得兩奈米粒子局部焊接融合並形成多晶奈米線。多晶奈米線在第二階段照射線偏振光後,將持續產生表面電漿子加熱;而透過表面電漿子熱處理多晶奈米線的方式重整多晶奈米線的晶格,並使得多晶奈米線再結晶為單晶奈米線。 Take the nano silver solution as an example. In one embodiment, after the nano silver aqueous solution is irradiated with linearly polarized light in the first stage, the nano silver particles in the aqueous solution of nano silver produce surface plasmons. Among them, the surface plasmonics will cause the surface plasmon coupling phenomenon of the adjacent two nano silver particles, and then generate the interaction light and optical moment. Under the action of light and light moment, adjacent nano-silver particles are aggregated and guided to form a linear polymer, and the attachment direction is perpendicular to the polarization direction of the linearly polarized light. In addition, the surface plasmonic effect is further converted into thermal energy at the contact surface of the two nano-silver particles, so that the two nano-particles are locally welded and fused to form a polycrystalline nanowire. After the polycrystalline nanowire irradiates the linearly polarized light in the second stage, surface plasmon heating is continuously generated; and the crystal lattice of the polycrystalline nanowire is reformed by heat treatment of the polycrystalline nanowire through the surface plasmon, and the polycrystalline naphthalene is modified. The rice noodle is recrystallized into a single crystal nanowire.

圖3的部分實施例中,該單晶金屬前驅物為多晶金屬奈米材料,且該施予一線偏振光於該單晶金屬前驅物的步驟可進一步包含一子階段。所述的子階段為轉換該多晶金屬材料為一單晶金屬材料。 In some embodiments of FIG. 3, the single crystal metal precursor is a polycrystalline metal nanomaterial, and the step of applying a linearly polarized light to the single crystal metal precursor may further comprise a sub-stage. The sub-stage is to convert the polycrystalline metal material into a single crystal metal material.

以沉積於矽基板上的多晶金導線為例。在一實施例中,與水物理接觸的多晶金導線在照射線偏振光後,多晶金導線會產生表面電漿子。其中,電漿子透過熱處理多晶金導線的方式重整多晶金導線的內部晶格,並使得多晶金導線再結晶為一至多個單晶金導線。而再結晶後的一至多個單晶金導線的整體電阻小於再結晶前的多晶金導線。 Take a polycrystalline gold wire deposited on a germanium substrate as an example. In one embodiment, the polycrystalline gold wire that is in physical contact with the water, after illuminating the linearly polarized light, produces a surface plasmonic. Wherein, the plasmonics reform the internal crystal lattice of the polycrystalline gold wire by heat-treating the polycrystalline gold wire, and recrystallize the polycrystalline gold wire into one or more single crystal gold wires. The overall resistance of one or more single crystal gold wires after recrystallization is smaller than that of the polycrystalline gold wires before recrystallization.

圖4為本發明部分實施例之金屬單晶化方法流程圖。圖4的金屬單晶化方法與圖3的實施例相似,主要差異在於圖4的金屬單晶化方法進一步包含一改變光功率的步驟。具體而言,圖4的金屬單晶化方法起始於提供一基板,並放置一單晶金屬前驅物至該基板上;其中,所述的單晶金屬前驅物與一溶液物理接觸。接著,施於一線偏振光於該單晶金屬前驅物;其後,於一第一預定條件被滿足後改變該線偏振光之光功率;最後,當一第二預定條件被滿足後再停止施與該線偏振光。 4 is a flow chart of a method for metal single crystal formation according to some embodiments of the present invention. The metal single-crystalization method of FIG. 4 is similar to the embodiment of FIG. 3, the main difference being that the metal single-crystalization method of FIG. 4 further includes a step of changing the optical power. Specifically, the metal single-crystalization process of FIG. 4 begins by providing a substrate and placing a single crystal metal precursor onto the substrate; wherein the single crystal metal precursor is in physical contact with a solution. Then, applying linearly polarized light to the single crystal metal precursor; thereafter, changing the optical power of the linearly polarized light after a first predetermined condition is satisfied; finally, stopping when a second predetermined condition is satisfied With this linearly polarized light.

在圖4的一實施例中,單晶金屬前驅物係採用奈米金桿,其長寬比接近4.18且表面電漿子共振波長為795nm;此外,該奈米金桿係先與水混和成濃度為10mg/kg之奈米金桿水溶液後再提供至基板。而單晶化過程中,該奈米金桿水溶液經照射波長為1064nm、照度約為10mW/cm2之線偏振光30分鐘後,又進一步照射波長為1064nm、照度約為20mW/cm2 之線偏振光2分鐘才停止繼續施予線偏振光。在此實施例中,產物包含四角形、五角形或六角形的單晶奈米線晶體或準單晶晶體。 In an embodiment of FIG. 4, the single crystal metal precursor is a nano-gold rod having an aspect ratio of 4.18 and a surface plasmon resonance wavelength of 795 nm; in addition, the nano-gold rod is first mixed with water. The nanogold rod aqueous solution having a concentration of 10 mg/kg was supplied to the substrate. In the single crystal process, the nanogold rod aqueous solution is irradiated with linearly polarized light having a wavelength of 1064 nm and an illuminance of about 10 mW/cm 2 for 30 minutes, and further irradiated with a wavelength of 1064 nm and an illuminance of about 20 mW/cm 2 . The linearly polarized light stopped continuing to apply linearly polarized light for 2 minutes. In this embodiment, the product comprises a tetragonal, pentagonal or hexagonal single crystal nanocrystal or quasi-single crystal.

在圖4的部分實施例中,改變線偏振光之光功率的步驟係透過光功率調節器完成。當光束產生器產生的光束經過光功率調節器時,會受光功率調節器之控制改變其光功率;因此,可透控制光功率調節器參數的方式改變光束的光功率,進而完成改變線偏振光之光功率的步驟。此實施例可以在不調整光束產生器功率的情況下,改變線偏振光之光功率。 In some of the embodiments of Figure 4, the step of varying the optical power of the linearly polarized light is accomplished by an optical power conditioner. When the beam generated by the beam generator passes through the optical power regulator, the optical power is changed by the control of the optical power regulator; therefore, the optical power of the beam can be changed by controlling the parameters of the optical power regulator, thereby completing the change of the linearly polarized light. The step of light power. This embodiment can change the optical power of the linearly polarized light without adjusting the beam generator power.

在圖4的部分實施例中,改變線偏振光之光功率的步驟係透過調整光束產生器功率完成。透過調整光束產生器本身的功率,使得光束產生器發出不同光功率之光束並間接產生不同光功率之線偏振光。此實施 例可以在光束產生器及單晶金屬前驅物之間未配置光功率調節器的情況下,改變線偏振光之光功率。 In some of the embodiments of Figure 4, the step of varying the optical power of the linearly polarized light is accomplished by adjusting the beam generator power. By adjusting the power of the beam generator itself, the beam generator emits beams of different optical power and indirectly produces linearly polarized light of different optical powers. This implementation For example, the optical power of the linearly polarized light can be changed without the optical power conditioner being disposed between the beam generator and the single crystal metal precursor.

在圖4的部分實施例中,第一預定條件及第二預定條件皆為曝射時間;所述的曝射時間係指在該步驟中,線偏振光施予於單晶金屬前驅物的時間長度。在較佳的實施例中,第一預定條件為30分鐘至60分鐘之間;而第二預定條件為10分鐘至30分鐘之間。 In some embodiments of FIG. 4, the first predetermined condition and the second predetermined condition are both exposure times; the exposure time refers to the time during which the linearly polarized light is applied to the single crystal metal precursor. length. In a preferred embodiment, the first predetermined condition is between 30 minutes and 60 minutes; and the second predetermined condition is between 10 minutes and 30 minutes.

在圖4的部分實施例中,第一預定條件及第二預定條件皆為該溶液的當前體積;所述的當前體積單位為體積百分比,而比較基礎為該溶液受該線偏振光照射前的原始體積。在較佳的實施例中,第一預定條件為原始體積的20%-90%,更佳為20%-60%,又更佳為30%-40%;第二預定條件為原始體積的5%-50%,更佳為5%-40%,又更佳為10%-30%。 In some embodiments of FIG. 4, the first predetermined condition and the second predetermined condition are both the current volume of the solution; the current volume unit is a volume percentage, and the comparison basis is before the solution is irradiated by the linearly polarized light. Original volume. In a preferred embodiment, the first predetermined condition is from 20% to 90%, more preferably from 20% to 60%, still more preferably from 30% to 40% of the original volume; and the second predetermined condition is 5 of the original volume. %-50%, more preferably 5%-40%, and even more preferably 10%-30%.

圖5A-圖5E為本發明部分實施例之場發射式掃描電子顯微鏡(FE-SEM)圖。其中,圖5A與圖5B為單晶金屬前驅物透過場發射式掃描電子顯微鏡分別放大100,000倍及50,000後的結果;而圖中之單晶金屬前驅物為奈米金桿,其長寬比接近4.18且表面電漿子共振波長為795nm。由於圖5A及圖5B中的單晶金屬前驅物皆尚未曝射於線偏振光下,故單晶金屬前驅物呈無方向性排列,且未觀察到自組裝現象。 5A-5E are field emission scanning electron microscope (FE-SEM) images of some embodiments of the present invention. 5A and FIG. 5B are results of a single crystal metal precursor amplified by a field emission scanning electron microscope by 100,000 times and 50,000, respectively; and the single crystal metal precursor in the figure is a nanometer gold rod, and the aspect ratio thereof is close to 4.18 and the surface plasmonic resonance wavelength is 795 nm. Since the single crystal metal precursors in FIGS. 5A and 5B have not been exposed to linearly polarized light, the single crystal metal precursors are arranged in a non-directional manner, and no self-assembly phenomenon is observed.

圖5C為單晶金屬前驅物經照射線偏振光後的FE-SEM圖。於圖5C的實施例中,前述奈米金桿會先與水混和成濃度為13mg/kg之0.8微升(μL)奈米金桿水溶液。而該奈米金桿水溶液經照射波長為1064nm、照度為30mW/cm2之線偏振光10分鐘後,經場發射式掃描電子顯微鏡觀察到圖5C的 結果。於圖5C的實施例中,奈米金桿於照射線偏振光後形成長度為1-2微米(μm)且橫截面呈五角形之晶體,該晶體經X光繞射實驗確認為單晶晶體。 Figure 5C is an FE-SEM image of a single crystal metal precursor after being irradiated with linearly polarized light. In the embodiment of Figure 5C, the aforementioned nanogold rods are first mixed with water to form a 0.8 microliter (μL) nanogold rod aqueous solution having a concentration of 13 mg/kg. The nanogold rod aqueous solution was irradiated with linearly polarized light having a wavelength of 1064 nm and an illuminance of 30 mW/cm 2 for 10 minutes, and the results of Fig. 5C were observed by a field emission scanning electron microscope. In the embodiment of FIG. 5C, the nanogold rod forms a crystal having a length of 1-2 micrometers (μm) and a pentagon cross section after being irradiated with linearly polarized light, and the crystal is confirmed to be a single crystal by X-ray diffraction experiments.

圖5D為單晶金屬前驅物經照射線偏振光後的FE-SEM圖。於圖5D的實施例中,前述奈米金桿會先與水混和成濃度為10mg/kg之2微升(μL)奈米金桿水溶液。而該奈米金桿水溶液經照射波長為785nm、照度約為5mW/cm2之線偏振光40分鐘後,可透過場發射式掃描電子顯微鏡觀察到圖5D的結果。於圖5D的實施例中,奈米金桿於照射線偏振光後形成橫截面呈四角形之單晶晶體,且其體積較圖5C中的晶體大。 Figure 5D is an FE-SEM image of a single crystal metal precursor after being irradiated with linearly polarized light. In the embodiment of Figure 5D, the aforementioned nanogold rods are first mixed with water to form a 2 microliter (μL) nanogold rod aqueous solution having a concentration of 10 mg/kg. After the nano-gold rod aqueous solution was irradiated with linearly polarized light having a wavelength of 785 nm and an illuminance of about 5 mW/cm 2 for 40 minutes, the result of FIG. 5D was observed by a field emission scanning electron microscope. In the embodiment of Fig. 5D, the nanogold rod forms a single crystal having a quadrangular cross section after being irradiated with linearly polarized light, and its volume is larger than that of the crystal in Fig. 5C.

圖5E為單晶金屬前驅物經照射線偏振光後的FE-SEM圖。於圖5E的實施例中,前述奈米金桿會先與水混和成濃度為10mg/kg之2微升(μL)奈米金桿水溶液。而該奈米金桿水溶液經照射波長為785nm、照度為5mW/cm2之線偏振光照射過程中,奈米金桿水溶液之溫度全程不高於95℃,且奈米金桿水溶液在其體積剩照射前體積5%前即停止照射;其線偏振光總曝射時間約為55分鐘。於圖5E的實施例中,奈米金桿於照射線偏振光後形成長度約4微米(μm)之線性單晶晶體。 Figure 5E is an FE-SEM image of a single crystal metal precursor after being irradiated with linearly polarized light. In the embodiment of Figure 5E, the aforementioned nanogold rods are first mixed with water to form a 2 microliter (μL) nanogold rod aqueous solution having a concentration of 10 mg/kg. While the nano-gold rod aqueous solution is irradiated by linearly polarized light having a wavelength of 785 nm and an illuminance of 5 mW/cm 2 , the temperature of the aqueous solution of the nano-gold rod is not higher than 95 ° C, and the aqueous solution of the nano-gold rod is in its volume. The irradiation was stopped before the volume of 5% before the irradiation; the total exposure time of the linearly polarized light was about 55 minutes. In the embodiment of Fig. 5E, the nanogold rod forms a linear single crystal crystal having a length of about 4 micrometers (μm) after being irradiated with linearly polarized light.

以上實施方式僅為說明本發明之技術思想及特點,目的在於使熟習此技藝之人士能充分瞭解本發明之內容並能據以實施之,並不能以此限定本發明之專利範圍,若依本發明所揭示精神所為之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。 The above embodiments are merely illustrative of the technical idea and the features of the present invention, and are intended to enable those skilled in the art to fully understand the contents of the present invention and can implement the present invention. Equivalent variations or modifications of the spirit of the invention are intended to be included within the scope of the invention.

Claims (10)

一種金屬單晶化的方法:提供一基板;放置一單晶金屬前驅物至該基板上,其中該單晶金屬前驅物與一溶液物理接觸,且該溶液具有一第一溶液體積;施予一線偏振光於該單晶金屬前驅物,且該線偏振光由一光束產生器產生,並透過該光束產生器與該線偏振片之間設置至少一光學組件調節後接觸該單晶金屬前驅物;於滿足一預定條件時停止施予該線偏振光;其中,該預定條件為一第二溶液體積或一曝射時間。 A method for crystallizing a metal: providing a substrate; placing a single crystal metal precursor onto the substrate, wherein the single crystal metal precursor is in physical contact with a solution, and the solution has a first solution volume; Polarizing light is applied to the single crystal metal precursor, and the linearly polarized light is generated by a beam generator, and at least one optical component is disposed between the beam generator and the linear polarizing plate to adjust and contact the single crystal metal precursor; The application of the linearly polarized light is stopped when a predetermined condition is satisfied; wherein the predetermined condition is a second solution volume or an exposure time. 如請求項1所述之方法,其中該單晶金屬前驅物為一金屬奈米粒子、一金屬奈米桿或一多晶金屬材料。 The method of claim 1, wherein the single crystal metal precursor is a metal nanoparticle, a metal nanorod or a polycrystalline metal material. 如請求項2所述之方法,其中該單晶金屬前驅物的成分係選自由金、銀、銅、鋁或其組合所構成的群族。 The method of claim 2, wherein the composition of the single crystal metal precursor is selected from the group consisting of gold, silver, copper, aluminum, or a combination thereof. 如請求項2所述之方法,其中當該單晶金屬前驅物為該金屬奈米粒子或該金屬奈米桿時,該單晶金屬前驅物於該溶液中的濃度為1mg/kg至500mg/kg之間。 The method of claim 2, wherein when the single crystal metal precursor is the metal nanoparticle or the metal nanorod, the concentration of the single crystal metal precursor in the solution is from 1 mg/kg to 500 mg/ Between kg. 如請求項1所述之方法,其中該線偏振光為的波長介於380nm至2400nm之間。 The method of claim 1, wherein the linearly polarized light has a wavelength between 380 nm and 2400 nm. 如請求項5所述之方法,其中該線偏振光為連續波雷射光。 The method of claim 5, wherein the linearly polarized light is continuous wave laser light. 如請求項6所述之方法,其中該線偏振光所產生的照度小於1000mW/cm2The method of claim 6, wherein the linearly polarized light produces an illuminance of less than 1000 mW/cm 2 . 如請求項1所述之方法,其中該曝射時間為該線偏振光施予於該單晶金屬前驅物的時間長度,且該曝射時間為10分鐘至60分鐘之間。 The method of claim 1, wherein the exposure time is a length of time during which the linearly polarized light is applied to the single crystal metal precursor, and the exposure time is between 10 minutes and 60 minutes. 如請求項1所述之方法,其中該第二溶液體積為該溶液的當前體積,且該第二溶液體積為該第一溶液體積的5%至100%。 The method of claim 1, wherein the second solution volume is the current volume of the solution, and the second solution volume is from 5% to 100% of the first solution volume. 一種金屬單晶化設備,包含:一基板;一單晶金屬前驅物,置於該基板上,其中該單晶金屬前驅物與一溶液物理接觸;一光束產生器,用以提供一光束至該單晶金屬前驅物;以及一線偏振片,設置於該光束產生器與該單晶金屬前驅物之間;其中,該光束產生器與該線偏振片之間設置至少一光學組件。 A metal single crystallizing apparatus comprising: a substrate; a single crystal metal precursor disposed on the substrate, wherein the single crystal metal precursor is in physical contact with a solution; and a beam generator for providing a beam to the a single crystal metal precursor; and a linear polarizing plate disposed between the beam generator and the single crystal metal precursor; wherein at least one optical component is disposed between the beam generator and the linear polarizer.
TW105115319A 2016-05-18 2016-05-18 Apparatus for manufacturing metallic single crystalline and the operating method thereof TWI617702B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW105115319A TWI617702B (en) 2016-05-18 2016-05-18 Apparatus for manufacturing metallic single crystalline and the operating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105115319A TWI617702B (en) 2016-05-18 2016-05-18 Apparatus for manufacturing metallic single crystalline and the operating method thereof

Publications (2)

Publication Number Publication Date
TW201741500A TW201741500A (en) 2017-12-01
TWI617702B true TWI617702B (en) 2018-03-11

Family

ID=61230182

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105115319A TWI617702B (en) 2016-05-18 2016-05-18 Apparatus for manufacturing metallic single crystalline and the operating method thereof

Country Status (1)

Country Link
TW (1) TWI617702B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150279731A1 (en) * 2014-03-28 2015-10-01 Yonggang Yong LI Embedded circuit patterningg feature selective electroless copper plating

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150279731A1 (en) * 2014-03-28 2015-10-01 Yonggang Yong LI Embedded circuit patterningg feature selective electroless copper plating

Also Published As

Publication number Publication date
TW201741500A (en) 2017-12-01

Similar Documents

Publication Publication Date Title
Sulaiman et al. Review on grain size effects on thermal conductivity in ZnO thermoelectric materials
Toimil-Molares Characterization and properties of micro-and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology
Hu et al. Laser synthesis and size tailor of carbon quantum dots
Wang et al. Recent advances in solution-processed inorganic nanofilm photodetectors
Švrček et al. Blue luminescent silicon nanocrystals prepared by ns pulsed laser ablation in water
Liu et al. Transparent, flexible conducting graphene hybrid films with a subpercolating network of silver nanowires
Yan et al. Impact of annealing on morphology and ferromagnetism of ZnO nanorods
Mo et al. Preparation and characterization of CdS nanotubes and nanowires by electrochemical synthesis in ion-track templates
Dinh et al. Silver nanowires: a promising transparent conducting electrode material for optoelectronic and electronic applications
Cheng et al. High-quality ZnO nanowire arrays directly fabricated from photoresists
Khademian et al. Synthesis of CuS nanoparticles by laser ablation method in DMSO media
Yang et al. Polycrystalline Si nanoparticles and their strong aging enhancement of blue photoluminescence
Liang et al. Polymer-assisted self-assembly of silver nanoparticles into interconnected morphology and enhanced surface electric conductivity
CN103933902A (en) Binary ordered colloidal crystal, metal nano array and preparation method thereof
Zhang et al. In situ localized formation of cesium lead bromide nanocomposites for fluorescence micro-patterning technology achieved by organic solvent polymerization
CN105063556A (en) Method for preparing nano metal particle array on graphene
Yu et al. Facile boosting light-scattering of ZnO nanorods in broadband spectrum region
TWI617702B (en) Apparatus for manufacturing metallic single crystalline and the operating method thereof
Wang et al. Electrodeposition of tubular-rod structure gold nanowires using nanoporous anodic alumina oxide as template
Lv et al. Growth and optical properties of hierarchical flower-like ZnO nanostructures
Noh et al. Laser-irradiated inclined metal nanocolumns for selective, scalable, and room-temperature synthesis of plasmonic isotropic nanospheres
Zhang et al. The magnetic properties of CoFeB and CoFeB/Ag nanodot arrays fabricated by a template transfer imprinting method
Eshghi et al. Synthesis of CuO nanowires on Cu-foil using thermal oxidation method, a novel annealing process
Jung et al. Optical properties of self-assembled Cu2O nanocrystals embedded in a polyimide layer
Lin et al. Rapid fabrication of silver nanowires through photoreduction of silver nitrate from an anodic-aluminum-oxide template