TWI603495B - Solar battery structure and method of manufacturing the same - Google Patents
Solar battery structure and method of manufacturing the same Download PDFInfo
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- TWI603495B TWI603495B TW104118633A TW104118633A TWI603495B TW I603495 B TWI603495 B TW I603495B TW 104118633 A TW104118633 A TW 104118633A TW 104118633 A TW104118633 A TW 104118633A TW I603495 B TWI603495 B TW I603495B
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- passivation layer
- solar cell
- decane
- hydrogen
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000002161 passivation Methods 0.000 claims description 71
- 239000001257 hydrogen Substances 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 38
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 36
- 239000002019 doping agent Substances 0.000 claims description 14
- 229910052707 ruthenium Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 4
- 239000003054 catalyst Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- -1 ruthenium nitride Chemical class 0.000 claims description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- CWZQYRJRRHYJOI-UHFFFAOYSA-N 1,1,1-trimethoxydecane Chemical compound CCCCCCCCCC(OC)(OC)OC CWZQYRJRRHYJOI-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 94
- 239000000758 substrate Substances 0.000 description 32
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 27
- 229910052732 germanium Inorganic materials 0.000 description 23
- 238000000034 method Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 12
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000951 Aluminide Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- IZMVCSOUIXREHX-UHFFFAOYSA-N 9-(trimethoxymethyl)pentacosane Chemical compound C(CCCCCCCCCCCCCCC)C(C(OC)(OC)OC)CCCCCCCC IZMVCSOUIXREHX-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ROZSPJBPUVWBHW-UHFFFAOYSA-N [Ru]=O Chemical compound [Ru]=O ROZSPJBPUVWBHW-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Description
本發明係關於一種太陽能電池結構及其製造方法，且特別是有關於一種太陽能電池背電場鈍化層結構及其製造方法。 The present invention relates to a solar cell structure and a method of fabricating the same, and more particularly to a solar cell back field passivation layer structure and a method of fabricating the same.
隨著經濟發展，全球石化燃料存量迅速下降，永續、再生能源為目前主力開發的能源型態，如太陽能發電、風力發電、潮汐發電以及水力發電等。太陽能的應用受到廣泛研究且行之有年、不斷演進改良，許多區域已實施太陽能發電於日常生活中，主要原因不外乎相較於其他再生能源，太陽光之規律照射與普遍性。另外，太陽能在轉換過程中不會對環境造成汙染。舉例來說，在太陽能轉換為電能的過程中，無須藉由消耗其他能源而導致廢棄產物處理的問題，像是石化燃料產生之溫室氣體。但是，太陽能轉換為電能的效率卻受制於整個太陽能電池系統的機構設計與材料應用，製作太陽能電池的成本也因此居高不下。 With the economic development, the global petrochemical fuel stocks have rapidly declined. Sustainable and renewable energy are the main energy types currently being developed, such as solar power, wind power, tidal power and hydropower. The application of solar energy has been extensively studied and evolved over the years. Many areas have implemented solar power generation in daily life. The main reason is that compared with other renewable energy sources, the regular illumination and universality of sunlight. In addition, solar energy does not pollute the environment during the conversion process. For example, in the process of converting solar energy into electrical energy, there is no need to consume waste products to treat waste products, such as greenhouse gases produced by fossil fuels. However, the efficiency of converting solar energy into electrical energy is limited by the mechanical design and material application of the entire solar cell system, and the cost of manufacturing solar cells is therefore high.
為了提升太陽能電池效率並簡化製程條件，矽晶太陽能電池的背鈍化技術已發展許久。習知背鈍化太陽能電池背面利用原子層氣相沉積〈atomic layer deposition,ALD〉或 電漿化學氣相蒸鍍〈plasma enhanced chemical vapor deposition,PECVD〉並通入氣體三甲基鋁〈trimethylaluminum,TMA〉，使太陽能電池背面沉積Al2O3以形成一氧化鋁層，厚度約為6-12奈米。再進行第二次電漿化學氣相蒸鍍，沉積覆蓋層〈capping layer〉於鋁金屬層之上，覆蓋層係為一提高反射特性之絕緣層，常見覆蓋層材料為SiNx或SiOx。接下來，透過習知雷射剝蝕法〈laser ablation〉或雷射燒結電極法〈laser-fired contacts,LFC〉在絕緣層和鋁金屬層上穿孔打洞。之後，印上正電極、背電即以及鋁膠等，最後，鋁膠穿過雷射開孔區域與矽基板形成局部接觸背電場。由於鋁膠僅透過雷射開孔區域與矽基板接觸，燒結而產生的翹曲或破片現象大為降低。 In order to improve solar cell efficiency and simplify process conditions, the back passivation technology of twin solar cells has been developed for a long time. The back surface of the back passivated solar cell is atomic layer deposition (ALD) or plasma enhanced chemical vapor deposition (PECVD) and is introduced into the gas trimethylaluminum (TMA). Al 2 O 3 is deposited on the back side of the solar cell to form an aluminum oxide layer having a thickness of about 6-12 nm. Then, a second plasma chemical vapor deposition is performed, and a capping layer is deposited on the aluminum metal layer. The cap layer is an insulating layer with improved reflection characteristics. The common cap layer material is SiNx or SiOx. Next, a hole is punched through the insulating layer and the aluminum metal layer by a laser ablation method or a laser-fired contact (LFC) method. After that, the positive electrode, the back-electrode, and the aluminum glue are printed. Finally, the aluminum glue passes through the laser opening area to form a partial contact back electric field with the germanium substrate. Since the aluminum glue is in contact with the ruthenium substrate only through the laser opening area, the warpage or fragmentation caused by sintering is greatly reduced.
然而，雷射剝蝕法或雷射燒結電極法皆需要特殊機台設備，雖然提升太陽光能轉換為電能的效率，同時也造成製作太陽能設備成本居高不下。因此，如何提供一種具有良好光電轉換效率且不需使用高成本器材的太陽能電池，已成為本產業的重要課題。 However, the laser ablation method or the laser sintering electrode method requires special machine equipment, although the efficiency of converting solar energy into electrical energy is also increased, and the cost of manufacturing solar energy equipment is also high. Therefore, how to provide a solar cell having good photoelectric conversion efficiency without using high-cost equipment has become an important issue in the industry.
鑑於上述課題，本發明旨在提供一種太陽能電池及其製造方法，其具有高光電轉換效率且不需使用雷射機台設備形成鈍化層，進而達到降低生產成本。 In view of the above problems, the present invention is directed to a solar cell and a method of manufacturing the same, which have high photoelectric conversion efficiency and which do not require the use of a laser machine to form a passivation layer, thereby achieving a reduction in production cost.
根據本發明之上述目的，提出一種太陽能電池結構包含一晶片、一摻質層、一第一鈍化層、一含矽-氫鍵結鈍化層以及一金屬結構。該晶片具有一第一表面與一第二 表面。該摻質層設置於該第一表面上，該第一鈍化層設置於該摻質層上。該含矽-氫鍵結鈍化層設置於該第二表面上，並形成複數個開口暴露部分該第二表面。該金屬結構形成於該開口之壁面以提供一局部背面電場。 In accordance with the above objects of the present invention, a solar cell structure is provided comprising a wafer, a dopant layer, a first passivation layer, a germanium-hydrogen bonded passivation layer, and a metal structure. The wafer has a first surface and a second surface. The dopant layer is disposed on the first surface, and the first passivation layer is disposed on the dopant layer. The yttrium-hydrogen bonded passivation layer is disposed on the second surface and forms a plurality of open exposed portions of the second surface. The metal structure is formed on the wall of the opening to provide a partial back surface electric field.
根據本發明之上述目的，更提出一種太陽能電池製造方法包含提供一晶片，以及形成一含矽-氫鍵結鈍化層。形成該含矽-氫鍵結鈍化層還包含製備一含矽烷溶膠，塗佈該含矽烷溶膠於該表面，最後加熱該晶片以固化該含矽烷溶膠。 In accordance with the above objects of the present invention, a solar cell manufacturing method is further provided which comprises providing a wafer and forming a passivation-containing hydrogen bonding passivation layer. Forming the ruthenium-hydrogen-bonded passivation layer further comprises preparing a decane-containing sol, coating the decane-containing sol on the surface, and finally heating the wafer to cure the decane-containing sol.
S110-S126‧‧‧步驟 S110-S126‧‧‧Steps
100‧‧‧矽基材 100‧‧‧矽 substrate
101‧‧‧第一表面 101‧‧‧ first surface
103‧‧‧第二表面 103‧‧‧ second surface
113‧‧‧摻質層 113‧‧‧Doped layer
115‧‧‧第一鈍化層 115‧‧‧First passivation layer
117‧‧‧第一電極 117‧‧‧First electrode
120‧‧‧含矽-氫鍵結鈍化層 120‧‧‧矽-hydrogen bonded passivation layer
123‧‧‧開口 123‧‧‧ openings
130‧‧‧金屬結構 130‧‧‧Metal structure
本發明之上述和其他態樣、特徵及其他優點參照說明書內容並配合附加圖式得到更清楚的了解，其中：第1圖係繪示依照本發明隻一實施方式的一種太陽能背面電極的製作流程圖。 The above and other aspects, features, and other advantages of the present invention will be more clearly understood from the description and the accompanying drawings. FIG. 1 is a flow diagram showing a solar back electrode in accordance with an embodiment of the present invention. Figure.
第2圖係繪示一種背面電極鈍化之太陽能電池剖面示意圖。 Figure 2 is a schematic cross-sectional view of a solar cell with a back electrode passivation.
為了使本揭示內容的敘述更加詳盡與完備，下文針對了本發明的實施態樣與具體實施例提出了說明性的描述；但這並非實施或運用本發明具體實施例的唯一形式。以下所揭露的各實施例，在有益的情形下可相互組合或取代，也可在一實施例中附加其他的實施例，而無須進一步的記載或說 明。在以下描述中，將詳細敘述許多特定細節以使讀者能夠充分理解以下的實施例。然而，可在無此等特定細節之情況下實踐本發明之實施例。 The description of the embodiments of the present invention is intended to be illustrative and not restrictive. The embodiments disclosed below may be combined or substituted with each other in an advantageous situation, and other embodiments may be added to an embodiment without further documentation or description. Bright. In the following description, numerous specific details are set forth However, embodiments of the invention may be practiced without these specific details.
各式太陽能電池種類繁多，主要可分為矽基太陽能電池、化合物半導體太陽能電池以及有機太陽能電池等。矽基太陽能電池主要包含P-N二極體、抗反射層、正面電極與背面電極。矽基板不斷演進為更加輕薄，同時卻也產生背面載子的複合現象，對電池性能影響甚鉅。習知技術藉由鈍化層以及背面電場的機制，在太陽能電池的正面或背面設置鈍化層，不僅降低電池表面載子複合速度，也提高光電轉換效率。 There are many types of solar cells, and they can be mainly classified into bismuth-based solar cells, compound semiconductor solar cells, and organic solar cells. The ruthenium-based solar cell mainly comprises a P-N diode, an anti-reflection layer, a front electrode and a back electrode. The ruthenium substrate has evolved to be lighter and thinner, but it also produces a composite phenomenon of the back carrier, which has a great impact on battery performance. The prior art provides a passivation layer on the front or back surface of the solar cell by a passivation layer and a back surface electric field mechanism, which not only reduces the surface recombination speed of the battery surface but also improves the photoelectric conversion efficiency.
PERC〈Passivated emitter and rear cell〉太陽能電池代表一種特殊類型的矽基太陽能電池，其特徵在其正面和背面上具有介電質鈍化層。正面的鈍化層充當ARC層。背面介電質鈍化層有穿孔，作為延長電荷載子的壽命並因而改善光轉換效率。本發明主要提供一種太陽能電池及其製造方法，尤其是PERC矽基太陽能電池。 The PERC <Passivated emitter and rear cell> solar cell represents a special type of germanium based solar cell characterized by a dielectric passivation layer on its front and back sides. The front passivation layer acts as an ARC layer. The back dielectric passivation layer has perforations as an extension of the life of the charge carriers and thus improved light conversion efficiency. The invention mainly provides a solar cell and a manufacturing method thereof, in particular, a PERC germanium-based solar cell.
請參考第1圖。第1圖係根據本發明一實施例之太陽能電池製造方法流程圖。PERC矽基太陽能電池的製造以提供一矽基板開始，該矽基板可為P型矽晶片或N型矽晶片，此矽基板具有一平坦表面，基板之功用係作為太陽能電池中的PN二極體。 Please refer to Figure 1. 1 is a flow chart showing a method of manufacturing a solar cell according to an embodiment of the present invention. The PERC germanium-based solar cell is manufactured by providing a germanium substrate, which may be a P-type germanium wafer or an N-type germanium wafer. The germanium substrate has a flat surface, and the substrate function is used as a PN diode in the solar cell. .
接著，進行步驟S120形成一含矽-氫鍵結鈍化層於該表面。步驟S120進一步包含步驟S122-S126。其中， 步驟S122，該含矽-氫鍵結鈍化層係透過化學方法，使一化學溶膠即具有矽-氫〈Si-H〉鍵結。該化學溶膠係一矽烷溶膠包含矽氧烷、飽和一元醇、聚環氧乙烷〈poly(ethylene oxide),PEO〉以及酸性催化劑。根據本發明一實施方式，該矽烷溶膠含有十六基三甲氧矽烷〈hexadecyl trimethoxsilane,HTMS〉、甲醇、聚環氧乙烷以及硝酸當作酸性催化劑，透過溶膠-凝膠法〈sol-gel〉製備。溶膠凝膠法係在低溫環境下摻雜大量的無機物和有機物，該矽烷溶膠進行水解、縮合、聚合化學反應形成穩定的溶膠體系。再來，進行步驟S124，由矽烷溶膠形成之溶膠可直接塗佈在晶片之表面。塗佈的方式可以為旋轉塗佈〈spin coating〉、浸塗法〈dip coating〉、噴塗法〈spray coating〉、印刷法〈printing〉、網印法〈screen printing〉等基礎轉印方式，均勻覆蓋在晶片表面。 Next, step S120 is performed to form a germanium-hydrogen bonded passivation layer on the surface. Step S120 further includes steps S122-S126. among them, In step S122, the ruthenium-hydrogen-bonded passivation layer is chemically etched to have a hydrazine-hydrogen <Si-H> bond. The chemical sol-based decane sol comprises a decane, a saturated monohydric alcohol, a poly(ethylene oxide), a PEO, and an acidic catalyst. According to an embodiment of the present invention, the decane sol comprises hexadecyl trimethoxsilane (HTMS), methanol, polyethylene oxide and nitric acid as acidic catalysts, which are prepared by a sol-gel method. . The sol-gel method is doped with a large amount of inorganic substances and organic substances in a low-temperature environment, and the decane sol undergoes hydrolysis, condensation, and polymerization chemical reaction to form a stable sol system. Further, in step S124, the sol formed of the decane sol can be directly coated on the surface of the wafer. The coating method may be a basic transfer method such as spin coating, dip coating, spray coating, printing, screen printing, etc. On the surface of the wafer.
下一步，進行步驟S126，加熱該晶片以固化溶膠。溶膠經陳化膠粒間緩慢聚合，形成失去流動性的凝膠，凝膠再經過乾燥〈環境溫度約為60-500℃〉、熱處理等程序固化成膜，在晶片表面形成含矽-氫鍵結鈍化層。該含矽-氫鍵結鈍化層之厚度介於80-300奈米之間。 Next, step S126 is performed to heat the wafer to cure the sol. The sol slowly polymerizes between the aged rubber particles to form a gel that loses fluidity. The gel is then dried to a film (the ambient temperature is about 60-500 ° C), heat-treated, etc., to form a film containing a ruthenium-hydrogen bond on the surface of the wafer. Junction passivation layer. The ruthenium-hydrogen bonded passivation layer has a thickness between 80 and 300 nm.
習知利用電漿化學氣相沉積，將覆蓋層塗佈在鋁化層，覆蓋層在沉積過程產生氫氣，氫氣擴散至鋁化層，並滲透到鋁化層與矽基板介面，甚至擴散至矽基板內，使鈍化效果達到最佳狀態。根據本發明之一實施例，由於該矽烷溶膠即具有矽-氫鍵結，熱處理之後能形成一含氫矽氧薄 膜。其鈍化效果藉由塗佈、熱處理該含矽-氫鍵結鈍化層即可達成，直接替代包含鋁化層以及覆蓋層的多層結構之鈍化層。因為該矽烷溶膠經即帶有矽-氫鍵結，無須覆蓋層沉積的程序以產生氫氣。另外，該含矽-氫鍵結鈍化層透過基礎轉印方法即可塗布於晶片表面，習知鋁化層、覆蓋層等須以化學氣相沉積或電漿化學氣相沉積法塗佈，因此本發明製造成本大為降低。 It is known to use plasma chemical vapor deposition to coat a coating layer on an aluminized layer. The coating layer generates hydrogen during the deposition process, and the hydrogen gas diffuses to the aluminized layer and penetrates into the aluminized layer and the germanium substrate interface, and even diffuses to the germanium. In the substrate, the passivation effect is optimized. According to an embodiment of the present invention, since the decane sol has a hydrazine-hydrogen bond, a hydrogen-containing bismuth oxide can be formed after the heat treatment. membrane. The passivation effect can be achieved by coating and heat-treating the yttrium-hydrogen bonded passivation layer, directly replacing the passivation layer of the multilayer structure including the aluminide layer and the cap layer. Since the decane sol is subjected to hydrazine-hydrogen bonding, it is not necessary to cover the layer deposition procedure to generate hydrogen gas. In addition, the ruthenium-hydrogen-bonded passivation layer can be applied to the surface of the wafer through a basic transfer method, and the aluminized layer, the overlayer, and the like must be coated by chemical vapor deposition or plasma chemical vapor deposition. The manufacturing cost of the present invention is greatly reduced.
請參考第2圖。第2圖係根據本發明上述之方法製造之一太陽能電池示意圖。該太陽能電池包含一矽基板100、一摻質層113、一第一鈍化層115、複數個第一電極、一含矽-氫鍵結鈍化層120以及複數個金屬結構130。 Please refer to Figure 2. Figure 2 is a schematic diagram of a solar cell fabricated in accordance with the above described method of the present invention. The solar cell comprises a germanium substrate 100, a dopant layer 113, a first passivation layer 115, a plurality of first electrodes, a germanium-hydrogen bonded passivation layer 120, and a plurality of metal structures 130.
該矽基板100具有第一表面101與第二表面103。矽基板100為太陽能電池中的PN二極體，矽基板100可為單晶矽基板或多晶矽基板。在部分實施例中，P型矽基板之第一表面101可經粗糙化而為粗糙表面，以提升光的入射量。摻質層113可透過離子擴散製程設置於矽基板100之第一表面101，所形成的摻質層113係作為射極，並與晶片200為摻雜的部分形成P-N介面。第一鈍化層115覆蓋在摻質層115上，以鈍化矽基板100之第一表面101。第一鈍化層115更可兼具抗反射特性，以提高第一表面101之入光量。第一鈍化層材質可隨通入的沉積氣體而不同，材質包含但不侷限於Si3N4、SiO2或Al2O3。第一電極117設置於第一表面101，經由第一鈍化層115之孔洞與摻質層113接觸，進而與摻質層113形成金/半連接。 The germanium substrate 100 has a first surface 101 and a second surface 103. The germanium substrate 100 is a PN diode in a solar cell, and the germanium substrate 100 may be a single crystal germanium substrate or a polycrystalline germanium substrate. In some embodiments, the first surface 101 of the P-type germanium substrate may be roughened to be a rough surface to increase the amount of light incident. The dopant layer 113 is disposed on the first surface 101 of the germanium substrate 100 through an ion diffusion process. The dopant layer 113 is formed as an emitter and forms a PN interface with the portion of the wafer 200 that is doped. A first passivation layer 115 is overlying the dopant layer 115 to passivate the first surface 101 of the germanium substrate 100. The first passivation layer 115 can also have anti-reflection characteristics to increase the amount of light entering the first surface 101. The material of the first passivation layer may vary depending on the deposited gas, and the material includes but is not limited to Si 3 N 4 , SiO 2 or Al 2 O 3 . The first electrode 117 is disposed on the first surface 101 and contacts the dopant layer 113 via the hole of the first passivation layer 115 to form a gold/semi-join connection with the dopant layer 113.
另一方面，矽基板100之第二表面103設置有含矽-氫鍵結鈍化層120，含矽-氫鍵結鈍化層120可透過，例如轉印、網印、噴塗或旋轉塗佈法等覆蓋矽基板100之第二表面103，含矽-氫鍵結鈍化層120之開口123圖案更可進一步經由圖案化的塗佈過程中直接產生，而省略濕式蝕刻、黃光蝕刻、研磨或雷射等開孔製程的成本。開口123暴露部分第二表面103，為形成背面電場預留電極通道。含矽-氫鍵結鈍化層120之材質係利用化學方法使一化學溶膠帶有矽-氫鍵結，並於乾燥後形成一含氫之氧化或氮化矽〈例如：SiO2〉薄膜。此化學溶膠包含適當比例之矽氧烷〈例如氧化矽、氮化矽〉、飽和一元醇、聚環氧乙烷以及酸性催化劑。根據本發明一實施例，化學溶膠之組成為十六基三甲氧矽烷、甲醇、聚環氧乙烷以及硝酸。當化學溶膠固化於矽基板100之第二表面120時，含矽-氫鍵結鈍化層120不僅為一氧化矽薄膜，同時包含矽-氫鍵結〈Si-H〉。更詳細地說，請參考化學式〈I〉與化學式〈II〉。 On the other hand, the second surface 103 of the germanium substrate 100 is provided with a germanium-hydrogen bonded passivation layer 120, and the germanium-hydrogen bonded passivation layer 120 is permeable, such as transfer, screen printing, spray coating or spin coating. Covering the second surface 103 of the ruthenium substrate 100, the pattern of the opening 123 of the yttrium-hydrogen bonded passivation layer 120 can be further directly generated through the patterning coating process, while omitting wet etching, yellow etching, grinding or ray The cost of shooting and other open hole processes. The opening 123 exposes a portion of the second surface 103 to reserve an electrode channel for forming a back surface electric field. The material of the yttrium-hydrogen bonded passivation layer 120 is chemically entangled with a hydrazine-hydrogen bond and, after drying, forms a hydrogen-containing oxidized or cerium nitride (e.g., SiO 2 ) film. The chemical sol comprises a suitable proportion of a decane (e.g., ruthenium oxide, ruthenium nitride), a saturated monohydric alcohol, a polyethylene oxide, and an acidic catalyst. According to an embodiment of the invention, the composition of the chemical sol is hexadecyltrimethoxy decane, methanol, polyethylene oxide, and nitric acid. When the chemical sol is cured on the second surface 120 of the ruthenium substrate 100, the ruthenium-hydrogen-bonded passivation layer 120 is not only a ruthenium oxide film but also a ruthenium-hydrogen bond <Si-H>. In more detail, please refer to the chemical formula <I> and the chemical formula <II>.
化學式〈I〉除了常見之矽-氧結構，同時含有一矽-氫鍵結，化學式〈II〉同時包含矽-氧與矽-氫鍵結。簡單地說，透過溶膠凝膠法製備的含矽-氫鍵結鈍化層使得矽與氫原子結合成化學式〈I〉或〈II〉之型態。由上述化 學溶膠經過適當比例調配、製備的鈍化層，固化後直接形成含矽-氫鍵結之矽薄膜。換句話說，含矽-氫鍵結鈍化層120取代習知包含鋁化層以及覆蓋層的鈍化層，因為含矽-氫鍵結鈍化層120本身即為一含氫之氧化矽薄膜，矽-氫鍵結同時存在於含矽-氫鍵結鈍化層120，且其中之氫氣可擴散至矽基材100，以達到最佳鈍化效果。另外，含矽-氫鍵結鈍化層120可透過轉印法、印刷法、噴塗或旋轉塗佈法覆蓋於矽基材100之第二表面103。含矽-氫鍵結鈍化層厚度之一平均值係在80-300奈米〈nm〉之範圍內的值。習知含鋁層或覆蓋層必須透過原子層氣相沉積或電漿輔助化學氣相沉積等方式塗佈，相較之下，形成含矽-氫鍵結鈍化層120之設備條件相對簡單。 The chemical formula <I> contains a ruthenium-hydrogen bond in addition to the common oxime-oxygen structure, and the chemical formula <II> contains both ruthenium-oxygen and ruthenium-hydrogen bonds. Briefly, the ruthenium-hydrogen-bonded passivation layer prepared by the sol-gel method combines ruthenium with a hydrogen atom to form a chemical formula <I> or <II>. By the above The passivation layer prepared by proper proportioning and preparation of the sol is solidified to form a ruthenium-hydrogen bonded ruthenium film. In other words, the ytterbium-hydrogen-bonded passivation layer 120 replaces the passivation layer which is conventionally comprising an aluminide layer and a cap layer, since the yttrium-hydrogen bond-containing passivation layer 120 itself is a hydrogen-containing ruthenium oxide film, 矽- Hydrogen bonding is simultaneously present in the ruthenium-hydrogen-bonded passivation layer 120, and hydrogen gas therein can diffuse to the ruthenium substrate 100 for optimum passivation. In addition, the yttrium-hydrogen bonded passivation layer 120 may be coated on the second surface 103 of the ruthenium substrate 100 by a transfer method, a printing method, a spray coating or a spin coating method. The average value of one of the thicknesses of the passivation-hydrogen bonded passivation layer is a value in the range of 80 to 300 nm < nm>. It is known that the aluminum-containing layer or the cap layer must be coated by atomic layer vapor deposition or plasma-assisted chemical vapor deposition. In contrast, the conditions for forming the germanium-hydrogen-bonded passivation layer 120 are relatively simple.
藉由含矽-氫鍵結鈍化層120的設置，除了可以鈍化矽基板100之第二表面103的懸浮鍵〈dangling bond〉，更可利用含矽-氫鍵結鈍化層120具有累積負電荷而可排斥電子能力來降低複合作用在矽基板100之第二表面103發生。 By the arrangement of the germanium-hydrogen bonded passivation layer 120, in addition to the floating bond <dangling bond> which can passivate the second surface 103 of the germanium substrate 100, the passivation layer containing the germanium-hydrogen bond can have a cumulative negative charge. The ability to repel electrons to reduce recombination occurs on the second surface 103 of the tantalum substrate 100.
複數個金屬結構130設置於圖案化的含矽-氫鍵結鈍化層120之開口123之壁面。金屬結構130的材質可為例如鋁、氧化銦錫、鎳銅、鈦或錫，以形成太陽能電池的背面電極。無背電場的部分則形成良好的表面鈍化區域。 A plurality of metal structures 130 are disposed on the wall surface of the opening 123 of the patterned germanium-containing hydrogen bonding passivation layer 120. The material of the metal structure 130 may be, for example, aluminum, indium tin oxide, nickel copper, titanium or tin to form the back electrode of the solar cell. The portion without the back electric field forms a good surface passivation region.
矽基板100之第一表面101可使用高溫擴散製程，進行離子擴散以形成摻質層113。當矽基板100為P型矽晶片時，此離子擴散製程可使用例如磷或是其他的V族元 素。當矽基板100為N型矽晶片時，此離子擴散製程可使用例如硼或是其他III族元素。離子擴散製程後，可進行邊緣蝕刻，移除矽基材100邊緣的佈植區域。摻質層113係做為射極，並與矽基材100未摻雜的部份形成P-N接面。第一鈍化層115設置於摻質層113之上，再將正面電極117設置於預先開口的第一鈍化層115上。 The first surface 101 of the germanium substrate 100 may be ion-diffused to form the dopant layer 113 using a high temperature diffusion process. When the germanium substrate 100 is a P-type germanium wafer, the ion diffusion process may use, for example, phosphorus or other V-type elements. Prime. When the germanium substrate 100 is an N-type germanium wafer, the ion diffusion process may use, for example, boron or other group III elements. After the ion diffusion process, edge etching can be performed to remove the implanted regions on the edge of the tantalum substrate 100. The dopant layer 113 serves as an emitter and forms a P-N junction with the undoped portion of the tantalum substrate 100. The first passivation layer 115 is disposed on the dopant layer 113, and the front electrode 117 is disposed on the pre-opened first passivation layer 115.
本發明之含矽-氫鍵結鈍化層可取代習知背面電場由鋁化層與覆蓋層形成之鈍化層。其含氫之氧化矽或氮化矽薄膜係透過化學溶膠製備，以轉印、印刷、旋轉塗佈等方法即可覆蓋在矽基材，亦可進型圖案化的塗佈。待薄膜乾燥之後，即可設置背面電極或進行其他步驟。本發明之方法省去習知背面鈍化層兩道覆膜程序〈鋁化層與覆蓋層〉的工時與繁複步驟，也可使用成本較為低廉的塗佈的方式例如旋轉塗佈等覆蓋矽基材。含矽-氫鍵結鈍化層的設置使得電池表面載子複合速度降低，也提高整體太陽能電池的光電轉換效率。 The ruthenium-hydrogen-bonded passivation layer of the present invention can replace the passivation layer formed by the aluminized layer and the cap layer of the conventional back surface electric field. The hydrogen-containing cerium oxide or tantalum nitride film is prepared by a chemical sol, and can be coated on a ruthenium substrate by transfer, printing, spin coating, or the like, or can be patterned by patterning. After the film has dried, the back electrode can be placed or other steps can be performed. The method of the invention saves the man-hour and complicated steps of the two-layer coating process (aluminized layer and the cover layer) of the conventional back passivation layer, and can also cover the base by using a relatively low cost coating method such as spin coating. material. The arrangement of the passivation-containing hydrogen-bonding passivation layer reduces the composite speed of the surface carrier of the battery, and also improves the photoelectric conversion efficiency of the overall solar cell.
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
100‧‧‧矽基材 100‧‧‧矽 substrate
101‧‧‧第一表面 101‧‧‧ first surface
103‧‧‧第二表面 103‧‧‧ second surface
113‧‧‧摻質層 113‧‧‧Doped layer
115‧‧‧第一鈍化層 115‧‧‧First passivation layer
117‧‧‧第一電極 117‧‧‧First electrode
120‧‧‧含矽-氫鍵結鈍化層 120‧‧‧矽-hydrogen bonded passivation layer
123‧‧‧開口 123‧‧‧ openings
130‧‧‧金屬結構 130‧‧‧Metal structure
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| TW104118633A TWI603495B (en) | 2015-06-09 | 2015-06-09 | Solar battery structure and method of manufacturing the same |
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| TW104118633A TWI603495B (en) | 2015-06-09 | 2015-06-09 | Solar battery structure and method of manufacturing the same |
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| TW201644060A TW201644060A (en) | 2016-12-16 |
| TWI603495B true TWI603495B (en) | 2017-10-21 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200840070A (en) * | 2007-03-29 | 2008-10-01 | Applied Materials Inc | Method and device for producing an anti-reflection or passivation layer for solar cells |
| TW201248867A (en) * | 2011-05-26 | 2012-12-01 | Hitachi Chemical Co Ltd | Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same |
| TW201340343A (en) * | 2012-03-30 | 2013-10-01 | Eternal Chemical Co Ltd | Passivation layer of solar cell and manufacturing method thereof |
| WO2014044924A1 (en) * | 2012-09-24 | 2014-03-27 | Optitune Oy | A method of modifying an n-type silicon substrate |
| TW201414002A (en) * | 2008-10-22 | 2014-04-01 | Ind Tech Res Inst | Method of manufacturing back electrode of silicon bulk solar cell |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200840070A (en) * | 2007-03-29 | 2008-10-01 | Applied Materials Inc | Method and device for producing an anti-reflection or passivation layer for solar cells |
| TW201414002A (en) * | 2008-10-22 | 2014-04-01 | Ind Tech Res Inst | Method of manufacturing back electrode of silicon bulk solar cell |
| TW201248867A (en) * | 2011-05-26 | 2012-12-01 | Hitachi Chemical Co Ltd | Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same |
| TW201340343A (en) * | 2012-03-30 | 2013-10-01 | Eternal Chemical Co Ltd | Passivation layer of solar cell and manufacturing method thereof |
| WO2014044924A1 (en) * | 2012-09-24 | 2014-03-27 | Optitune Oy | A method of modifying an n-type silicon substrate |
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| TW201644060A (en) | 2016-12-16 |
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