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TWI699837B - Multi-grain selection method - Google Patents

Multi-grain selection method Download PDF

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Publication number
TWI699837B
TWI699837B TW107143327A TW107143327A TWI699837B TW I699837 B TWI699837 B TW I699837B TW 107143327 A TW107143327 A TW 107143327A TW 107143327 A TW107143327 A TW 107143327A TW I699837 B TWI699837 B TW I699837B
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die
film
crystal grains
range
selection
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TW107143327A
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TW201941320A (en
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莊文彬
陳建發
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旺矽科技股份有限公司
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Abstract

一種多晶粒選取方法,係先對一黏附有複數晶粒之待選取膠膜定義一包含複數該晶粒之選取範圍,再挑除選取範圍周圍的晶粒,使得該選取範圍受一晶粒挑除後所形成之分隔道圍繞,再利用一頂推座頂推該待選取膠膜之一對應該選取範圍之區塊,而將該選取範圍內之晶粒壓抵並附著於一附著面;藉此,本發明能藉由簡便的構造及步驟同時選取多個晶粒而產生良好效率並避免影響未選取之晶粒。A method for selecting multiple crystal grains is to first define a selection range containing multiple crystal grains for a film to be selected with multiple crystal grains attached, and then pick out the crystal grains around the selection range so that the selection range is affected by a crystal grain The partition formed after the removal is surrounded, and then a push seat is used to push one of the to-be-selected films corresponding to the selected area, and the die in the selected area is pressed against and attached to an attachment surface In this way, the present invention can simultaneously select multiple dies by simple structure and steps to produce good efficiency and avoid affecting unselected dies.

Description

多晶粒選取方法Multi-grain selection method

本發明係與晶粒選取製程有關,特別是關於一種可同時選取多個晶粒之多晶粒選取方法。The present invention is related to the crystal grain selection process, and particularly relates to a multi-crystal grain selection method capable of simultaneously selecting multiple crystal grains.

對於半導體晶粒或者發光二極體晶粒,在壞晶(bad die)選取或分類選取製程中,晶圓(wafer)係先黏貼於俗稱藍膜(blue tape)的軟性薄膜上,再被切割成多數晶粒(die)。然後,就壞晶選取作業而言,可利用影像擷取裝置(例如CCD camera)檢測晶粒外觀而進行晶粒良莠判斷及位置確認,再將不良品自軟性薄膜上挑除;就晶粒分類選取作業而言,可利用影像擷取裝置對已經分類的晶粒進行位置確認,並利用一取放裝置(例如取放擺臂)將該等晶粒依據其規格或等級分別取下並分類放置。For semiconductor dies or LED dies, in the bad die selection or classification selection process, the wafer is first pasted on a soft film commonly known as blue tape, and then cut Into a large number of dies. Then, for the selection of bad crystals, an image capture device (such as a CCD camera) can be used to detect the appearance of the crystals to determine whether the crystals are good or not and to confirm their positions, and then pick out the defective products from the soft film; For classification selection, an image capture device can be used to confirm the position of the classified dies, and a pick-and-place device (such as a pick-and-place swing arm) can be used to remove and classify these dies according to their specifications or grades. place.

不論是晶圓已切割成晶粒但晶粒尚未分類的階段,或者是晶粒已分類但尚未揀取至分類放置處或其他預定位置的階段,都可能會需要進行大量轉移晶粒之程序,亦即利用取放裝置將晶粒自原本的軟性薄膜上移動至預定放置處(例如另一軟性薄膜上),以利用此晶粒轉移程序將晶粒分類放置,或者轉移後再進行後續製程。Whether the wafer has been cut into die but the die has not yet been sorted, or the die has been sorted but has not been picked to the sorting place or other predetermined location, it may require a large number of die transfer procedures. That is, the pick-and-place device is used to move the crystal grains from the original soft film to a predetermined place (for example, another soft film), so that the crystal grains can be sorted and placed by the crystal grain transfer procedure, or the subsequent processes can be performed after the transfer.

請參閱我國專利編號I581022,習用之晶粒選取方法係利用一頂推座在軟性薄膜下方將晶粒往上頂推,再利用一設有真空吸嘴的擺臂在軟性薄膜上方吸取晶粒再藉由擺動而將晶粒移動至另一軟性薄膜上。為了使真空吸嘴可有效吸取晶粒,頂推座設有真空吸孔以及一頂針,在真空吸嘴吸取晶粒時,頂推座之真空吸孔吸住原本的軟性薄膜,同時頂針伸出頂推座,使得原本的軟性薄膜變形而減少其與晶粒之間的黏合面積,進而使晶粒與原本的軟性薄膜分離。Please refer to China's patent number I581022. The conventional method for selecting crystal grains is to use an ejector seat to push the crystal grains upward under the soft film, and then use a swing arm with a vacuum nozzle to suck the crystal grains above the soft film. The crystal grains are moved to another flexible film by swinging. In order to make the vacuum suction nozzle can effectively suck the die, the ejector seat is provided with a vacuum suction hole and a thimble. When the vacuum nozzle sucks the die, the vacuum suction hole of the ejector seat sucks the original soft film, and the thimble extends The push seat deforms the original soft film and reduces the bonding area between it and the crystal grain, thereby separating the crystal grain from the original soft film.

然而,習用之晶粒選取方法利用諸如前述之取放裝置選取晶粒時,只能逐一取起軟性薄膜上的晶粒,而無法同時取起多個晶粒。目前市面上單顆分選的設備效率最高為每日100~200萬顆,舉例而言,一6吋晶圓可切割成約200萬顆晶粒,若利用習用之晶粒選取方法逐一選取晶粒,則需花費超過一天的時間。換言之,在需轉移大量晶粒的情況下,利用習用之晶粒選取方法來進行晶粒轉移程序係相當費時,因此不利於降低成本。然而,若要增設更多取放裝置來同時選取多個晶粒,勢必造成設備構造複雜且體積龐大等問題。However, when the conventional method for selecting crystal grains uses a pick-and-place device such as the one described above, the crystal grains on the soft film can only be picked up one by one, and multiple grains cannot be picked up at the same time. At present, the highest efficiency of single-chip sorting equipment on the market is 1 to 2 million per day. For example, a 6-inch wafer can be cut into about 2 million dies. If the conventional die selection method is used to select the dies one by one , It takes more than a day. In other words, when a large number of crystal grains need to be transferred, it is quite time-consuming to use the conventional crystal grain selection method to perform the crystal grain transfer process, which is not conducive to reducing costs. However, if more pick-and-place devices are to be added to select multiple dies at the same time, it will inevitably cause problems such as complex structure and bulky equipment.

有鑑於上述缺失,本發明之主要目的在於提供一種多晶粒選取方法,係能藉由簡便的構造及步驟同時選取多個晶粒而產生良好之效率。In view of the above-mentioned shortcomings, the main purpose of the present invention is to provide a method for selecting multiple crystal grains, which can produce good efficiency by selecting multiple crystal grains at the same time through simple structure and steps.

為達成上述目的,本發明所提供之多晶粒選取方法包含有下列步驟:To achieve the above objective, the method for selecting multiple crystal grains provided by the present invention includes the following steps:

對一黏附有複數晶粒之待選取膠膜定義一選取範圍,該選取範圍內包含該複數晶粒中的一部分且該部分包含複數該晶粒;Define a selection range for a to-be-selected adhesive film with a plurality of crystal grains attached, and the selection range includes a part of the plurality of crystal grains and the part includes the plurality of crystal grains;

挑除該選取範圍之周圍的晶粒,使得該選取範圍受一晶粒挑除後所形成之分隔道圍繞;以及Picking out the surrounding crystal grains of the selected range, so that the selected range is surrounded by a dividing road formed after the picking of a crystal grain; and

利用一頂推座頂推該待選取膠膜之一對應該選取範圍之區塊,而將該選取範圍內之晶粒壓抵並附著於一附著面。A pushing seat is used to push one of the to-be-selected adhesive films corresponding to the selected area, and the crystal grains in the selected area are pressed against and attached to an attachment surface.

在本發明之實施例中,前述之多晶粒選取方法可更細分為下列步驟:In the embodiment of the present invention, the aforementioned method for selecting multiple crystal grains can be further subdivided into the following steps:

a) 將複數晶粒黏附於一待選取膠膜之一黏著面;a) Adhere a plurality of dies to one of the adhesive surfaces of an adhesive film to be selected;

b) 對該等晶粒定義一選取範圍,該選取範圍內包含該複數晶粒中的一部分且該部分包含複數該晶粒;b) Define a selection range for the crystal grains, the selection range includes a part of the plurality of crystal grains and the part includes the plurality of crystal grains;

c) 挑除該選取範圍之周圍的晶粒,使得該選取範圍受一未設置任何晶粒之分隔道圍繞,且該分隔道之寬度係大於一該晶粒之寬度;c) Picking out the surrounding crystal grains of the selected range, so that the selected range is surrounded by a partition without any crystal grains, and the width of the partition is greater than the width of the crystal grain;

d) 將該待選取膠膜設置於一第一置晶裝置之一基座上,使得該待選取膠膜之一與該黏著面朝向相反方向之安裝面面向該基座,且該第一置晶裝置之一頂推座的一頂推面面向該待選取膠膜之安裝面,該頂推座之頂推面的形狀及面積係實質上符合該選取範圍之形狀及面積;d) The adhesive film to be selected is set on a base of a first crystal placement device, so that one of the adhesive films to be selected and the mounting surface facing the opposite direction of the adhesive surface face the base, and the first placement A pushing surface of a pushing seat of the crystal device faces the mounting surface of the film to be selected, and the shape and area of the pushing surface of the pushing seat are substantially in line with the shape and area of the selected range;

e) 使該第一置晶裝置與一第二置晶裝置之相對位置處於一轉貼位置,以使得該待選取膠膜之黏著面與該第二置晶裝置之一附著面相隔一預定距離地相面對;以及e) Make the relative position of the first crystal placement device and a second crystal placement device in a reposting position, so that the adhesive surface of the to-be-selected adhesive film is separated from one of the second crystal placement device by a predetermined distance Face to face; and

f) 使該頂推座相對於該基座移動而以其頂推面頂推該待選取膠膜之一對應該選取範圍之區塊,進而將該選取範圍內之晶粒壓抵於該第二置晶裝置之附著面,此時該附著面之附著力係大於該待選取膠膜之黏著面的黏著力,使得該選取範圍內之晶粒附著於該附著面。f) Move the pushing seat relative to the base to push one of the to-be-selected films on a block corresponding to the selected range with its pushing surface, and then press the die in the selected range against the first The adhesion surface of the two crystal device, at this time, the adhesion force of the adhesion surface is greater than the adhesion force of the adhesion surface of the adhesive film to be selected, so that the die in the selected range is attached to the adhesion surface.

其中,步驟a、b、c及d可依序進行,如此則挑除選取範圍周圍晶粒之步驟c非在第一置晶裝置上進行,亦即與後續轉移選取範圍內晶粒之步驟f係在不同機台上進行。或者,可將黏附有該等晶粒之待選取膠膜設置於第一置晶裝置之基座上,或將該等晶粒黏附於已設置於第一置晶裝置之基座上的待選取膠膜,然後再進行定義選取範圍及挑除選取範圍周圍晶粒之步驟,使得挑除選取範圍周圍晶粒之步驟c在第一置晶裝置上進行,亦即與後續轉移選取範圍內晶粒之步驟f係在同一機台上進行。Wherein, steps a, b, c, and d can be performed sequentially, so that the step c of picking out the dies around the selected range is not performed on the first die placement device, that is, the subsequent step f of transferring the die in the selected range It is done on different machines. Alternatively, the to-be-selected adhesive film with the dies attached to it can be placed on the base of the first crystal placement device, or the dies can be attached to the to-be-selected film that has been placed on the base of the first die placement device. Then, the steps of defining the selection range and removing the dies around the selection range are performed, so that the step c of removing the dies around the selection range is performed on the first chip placement device, that is, with subsequent transfer of the dies in the selection range The step f is performed on the same machine.

藉由該頂推座頂推該待選取膠膜而將該選取範圍內之晶粒壓抵於該第二置晶裝置之附著面,可將該待選取膠膜上一批量的晶粒選取至該第二置晶裝置之附著面上,而藉由該頂推座位移至對應不同選取範圍之位置並分別對各該選取範圍進行此頂推步驟(亦即重複進行步驟f),即可將該待選取膠膜上的晶粒分批地選取至同一第二置晶裝置之附著面的不同區塊上,或者選取至多個第二置晶裝置之附著面上,如此即可在將晶粒自第一置晶裝置轉移至第二置晶裝置時將晶粒貼附於預定放置處(例如分類放置)。By pushing the plastic film to be selected by the pushing seat and pressing the die in the selected range against the attachment surface of the second die placement device, a batch of die on the plastic film to be selected can be selected to On the attachment surface of the second crystal placement device, by displacing the pushing seat to a position corresponding to different selection ranges and performing this pushing step on each selection range (that is, repeating step f), The dies on the adhesive film to be selected are selected in batches to different areas of the attachment surface of the same second die placement device, or selected to the attachment surfaces of multiple second die placement devices, so that the die When transferring from the first wafer placement device to the second wafer placement device, the die is attached to a predetermined placement (for example, classified placement).

本發明之多晶粒選取方法係藉由頂推座頂推選取範圍內之複數晶粒以轉移被選取之該等晶粒,因此不需藉由多個取放裝置,即可同時選取多個晶粒而產生良好之效率。而且,藉由在轉移晶粒之前先挑除選取範圍周圍之晶粒,可避免在頂推待選取膠膜時破壞選取範圍周圍之晶粒,或者誤將選取範圍周圍之晶粒也轉移至該附著面,因此可提升晶粒轉移之準確性。The multi-die selection method of the present invention pushes a plurality of die in the selected range by the ejector seat to transfer the selected die, so multiple pick-and-place devices are not needed to select multiple Die and produce good efficiency. Moreover, by picking out the dies around the selected range before transferring the dies, it can avoid destroying the dies around the selected range when pushing the film to be selected, or by mistakenly transferring the dies around the selected range to this The adhesion surface can improve the accuracy of die transfer.

前述之多晶粒選取方法係藉由頂推座頂推待選取膠膜之方式來轉移晶粒而達到良好之效率,但亦可藉由頂推如前述之第二置晶裝置的一置晶膠膜來達到同樣之功效,因此,本發明更提供另一多晶粒選取方法,包含有下列步驟:The aforementioned multi-die selection method achieves good efficiency by pushing the plastic film to be selected by the ejector seat to transfer the die, but it can also be achieved by pushing a die of the aforementioned second die placement device. The adhesive film achieves the same effect. Therefore, the present invention further provides another method for selecting multiple crystal grains, which includes the following steps:

對一附著有複數晶粒之待選取附著件(例如,但不限於,待選取膠膜)定義一選取範圍,該選取範圍內包含該複數晶粒中的一部分且該部分包含複數該晶粒;Define a selection range for a to-be-selected attachment (for example, but not limited to, a film to be selected) to which a plurality of crystal grains are attached, the selection range includes a part of the plurality of crystal grains and the part includes a plurality of the crystal grains;

挑除該選取範圍之周圍的晶粒,使得該選取範圍受一晶粒挑除後所形成之分隔道圍繞;以及Picking out the surrounding crystal grains of the selected range, so that the selected range is surrounded by a dividing road formed after the picking of a crystal grain; and

利用一頂堆座頂推一面對該待選取附著件的置晶膠膜之一對應該選取範圍或對應該選取範圍及至少部分之該分隔道的區塊,而將該選取範圍內之晶粒壓抵並附著於該置晶膠膜之一附著面上。Use a top stacker to push one of the die attach films facing the attachment to be selected corresponding to the selected range or the area of the selected range and at least part of the partition, and the crystals in the selected range The particles are pressed against and attached to an attachment surface of the crystal placement adhesive film.

有關本發明所提供之多晶粒選取方法的詳細構造、特點、組裝或使用方式,將於後續的實施方式詳細說明中予以描述。然而,在本發明領域中具有通常知識者應能瞭解,該等詳細說明以及實施本發明所列舉的特定實施例,僅係用於說明本發明,並非用以限制本發明之專利申請範圍。The detailed structure, characteristics, assembly or use of the method for selecting multiple crystal grains provided by the present invention will be described in the detailed description of the following implementations. However, those with ordinary knowledge in the field of the present invention should be able to understand that these detailed descriptions and specific examples for implementing the present invention are only used to illustrate the present invention, and are not intended to limit the scope of the patent application of the present invention.

申請人首先在此說明,在以下將要介紹之實施例以及圖式中,相同之參考號碼,表示相同或類似之元件或其結構特徵。其次,當述及一元件設置於另一元件上時,代表前述元件係直接設置在該另一元件上,或者前述元件係間接地設置在該另一元件上,亦即,二元件之間還設置有一個或多個其他元件。而述及一元件「直接」設置於另一元件上時,代表二元件之間並無設置任何其他元件。需注意的是,圖式中的各元件及構造為例示方便並非依據真實比例及數量繪製,且若實施上為可能,不同實施例的特徵係可以交互應用。The applicant first explains here that in the following embodiments and drawings, the same reference numbers represent the same or similar elements or structural features. Secondly, when it is mentioned that an element is arranged on another element, it means that the aforementioned element is directly arranged on the other element, or the aforementioned element is indirectly arranged on the other element, that is, there is still another element between the two elements. One or more other elements are provided. When it is mentioned that an element is "directly" arranged on another element, it means that no other element is arranged between the two elements. It should be noted that the various elements and structures in the drawings are illustrative for convenience and are not drawn based on actual proportions and quantities, and if it is possible in implementation, the features of different embodiments can be applied interactively.

請參閱圖1,本發明一第一較佳實施例所提供之多晶粒選取方法10包含有下列步驟:Please refer to FIG. 1, a method 10 for selecting a multi-die provided by a first preferred embodiment of the present invention includes the following steps:

如圖1中所示之步驟S1及如圖2至4所示,對一黏附有複數晶粒11之待選取膠膜20定義一選取範圍60,該選取範圍60內包含該複數晶粒11中的一部分且該部分包含複數該晶粒11。詳而言之,本實施例之此步驟S1可細分為下列之步驟a及b。As shown in step S1 in FIG. 1 and as shown in FIGS. 2 to 4, a selection range 60 is defined for a to-be-selected adhesive film 20 with a plurality of dies 11 attached, and the selection range 60 includes the plurality of dies 11 A part of and the part includes a plurality of the crystal grains 11. In detail, this step S1 of this embodiment can be subdivided into the following steps a and b.

a) 如圖2所示,將複數晶粒11黏附於一待選取膠膜20之一黏著面21。a) As shown in FIG. 2, a plurality of dies 11 are adhered to an adhesive surface 21 of an adhesive film 20 to be selected.

在此須先說明的是,圖2所示為進行本實施例之多晶粒選取方法10所使用之機台的主要結構組成,但不一定是此多晶粒選取方法10之起始步驟所需之結構狀態。在本實施例中,進行此多晶粒選取方法10之機台包含有一第一置晶裝置30、一與該第一置晶裝置30相對設置之第二置晶裝置40,以及一設置於第一、二置晶裝置30、40之間且能相對於第一、二置晶裝置30、40水平(亦即沿X-Y平面)位移而離開第一、二置晶裝置30、40之間的影像擷取裝置50(例如CCD camera),第一、二置晶裝置30、40分別包含有一基座31、41以及一頂推座32、42,各該基座31、41係呈中空環狀,因此其中心具有一容置空間311、411,頂推座32、42係能相對於基座31、41而水平(亦即沿X-Y平面)及垂直(亦即沿Z軸)位移地分別設置於容置空間311、411,例如,本實施例係以頂推座32、42作垂直位移,而以基座31、41作水平位移。頂推座32、42之形狀並無限制,可如圖2中所示地具有朝頂推面321、421漸縮之區段,亦可整體寬度或外徑一致,只要頂推座32之頂推面321的形狀及面積實質上符合選取範圍60之形狀及面積、頂推座42之頂推面421的面積大於或等於選取範圍60之面積即可,此部分將詳述於下文。It should be noted here that FIG. 2 shows the main structure of the machine used in the multi-die selection method 10 of this embodiment, but not necessarily the initial steps of the multi-die selection method 10 The required structural state. In this embodiment, the machine for performing the multi-die selection method 10 includes a first crystal setting device 30, a second crystal setting device 40 arranged opposite to the first crystal setting device 30, and a The image between the first and second crystal setting devices 30 and 40 and which can be horizontally displaced relative to the first and second crystal setting devices 30 and 40 (that is, along the XY plane) to leave the image between the first and second crystal setting devices 30 and 40 The capture device 50 (such as a CCD camera), the first and second crystal placement devices 30, 40 respectively include a base 31, 41 and a push seat 32, 42, each of the bases 31, 41 is in a hollow ring shape, Therefore, the center has an accommodating space 311, 411, and the pushing seats 32, 42 can be disposed horizontally (that is along the XY plane) and vertically (that is, along the Z axis) relative to the bases 31 and 41, respectively. For the accommodating spaces 311 and 411, for example, in this embodiment, the push seats 32 and 42 are vertically displaced, and the bases 31 and 41 are horizontally displaced. The shape of the pushing seat 32, 42 is not limited. It can have sections that taper toward the pushing surface 321, 421 as shown in FIG. 2, and the overall width or outer diameter can be the same, as long as the top of the pushing seat 32 The shape and area of the pushing surface 321 substantially conform to the shape and area of the selection range 60, and the area of the pushing surface 421 of the pushing seat 42 is greater than or equal to the area of the selection range 60. This part will be described in detail below.

該待選取膠膜20包含有一基底層22,以及一覆蓋該基底層22一表面之黏膠層23,該基底層22之另一表面為一安裝面24,該黏膠層23顯露在外之表面即為該黏著面21。該待選取膠膜20可(但不限於)為能經由一解離步驟(例如加熱、照光、控溫等等)而降低其黏著面21之黏著力的膠膜,舉例而言,該待選取膠膜20可為一熱解離膠膜(thermal release tape), 熱解離膠膜的基底層22之材質為聚酯(polyester),而其黏膠層23之材質為發泡膠(foaming adhesive),該黏膠層23加熱至90℃後,黏著面21之黏著力會大幅下降;或者,該待選取膠膜20可為一光解離膠膜(UV release tape),其基底層22之材質為聚烯烴(polyolefin),而其黏膠層23之材質為壓克力膠(acrylic adhesive),該黏膠層23受到紫外光照射後,黏著面21之黏著力會大幅下降;或者,該待選取膠膜20可為一可溫控解離膠膜,其黏膠層23之溫度達到某一特定溫度時,黏著面21之黏著力會大幅下降。The adhesive film to be selected 20 includes a base layer 22, and an adhesive layer 23 covering a surface of the base layer 22. The other surface of the base layer 22 is a mounting surface 24, and the adhesive layer 23 is exposed on the outer surface This is the adhesive surface 21. The to-be-selected adhesive film 20 can be (but not limited to) a plastic film that can reduce the adhesive force of the adhesive surface 21 through a dissociation step (such as heating, illumination, temperature control, etc.). For example, the to-be-selected adhesive The film 20 can be a thermal release tape. The base layer 22 of the thermal release tape is made of polyester, and the material of the adhesive layer 23 is foaming adhesive. After the adhesive layer 23 is heated to 90°C, the adhesive force of the adhesive surface 21 will be greatly reduced; alternatively, the to-be-selected adhesive film 20 can be a UV release tape, and the base layer 22 is made of polyolefin (Polyolefin), and the material of the adhesive layer 23 is acrylic adhesive. After the adhesive layer 23 is irradiated by ultraviolet light, the adhesive force of the adhesive surface 21 will be greatly reduced; or, the adhesive film to be selected 20 can be a temperature-controllable dissociation adhesive film. When the temperature of the adhesive layer 23 reaches a certain temperature, the adhesive force of the adhesive surface 21 will be greatly reduced.

此步驟a主要係將待選取之晶粒11黏附於該待選取膠膜20之黏著面21,更明確地說,該黏著面21上通常係貼附由一晶圓12(如圖3所示)切割而成、已進行點測而分類或分等級的晶粒11,該等晶粒11係在一膠膜(例如藍膜)(圖中未示)上切割而成再轉貼至該待選取膠膜20之黏著面21,因此呈正面112黏附於黏著面21而露出背面114之狀態(如圖2所示),然後,該等晶粒11將要被轉移至預定放置處,例如,同一類或同一等級的晶粒黏貼到同一膠膜上,或者配合後續製程需求而將不同種類的晶粒依特定方式排列到同一膠膜上,換言之,此步驟a通常係於該黏著面21上貼附相當大量(例如數百萬顆)之待選取晶粒11。為簡化圖式並便於說明,圖2及6~11中僅繪製出少量晶粒11,並未對應實際狀況或其他圖式之晶粒數量。This step a is mainly to adhere the die 11 to be selected to the adhesive surface 21 of the adhesive film 20 to be selected. More specifically, the adhesive surface 21 is usually attached by a wafer 12 (as shown in FIG. 3). ) Die 11 that have been cut and classified or graded by point measurement. The dice 11 are cut on a plastic film (such as blue film) (not shown in the figure) and then reposted to the to-be-selected The adhesive surface 21 of the adhesive film 20 is therefore in a state where the front surface 112 is adhered to the adhesive surface 21 and the back surface 114 is exposed (as shown in FIG. 2). Then, the die 11 will be transferred to a predetermined place, for example, the same type Or dies of the same grade are attached to the same adhesive film, or different types of dies are arranged on the same adhesive film in a specific way according to the requirements of subsequent processes. In other words, this step a is usually attached to the adhesive surface 21 A considerable number (for example, millions) of dies 11 to be selected. In order to simplify the diagram and facilitate the description, only a few dies 11 are drawn in FIGS. 2 and 6 to 11, which do not correspond to actual conditions or the number of dies in other diagrams.

b) 如圖3及圖4所示,對該等晶粒11定義一選取範圍60,該選取範圍60內包含該複數晶粒11中的一部分且該部分包含複數該晶粒11。b) As shown in FIGS. 3 and 4, a selection range 60 is defined for the crystal grains 11, the selection range 60 includes a part of the plurality of crystal grains 11 and the part includes the plurality of crystal grains 11.

圖3所示之晶圓12係示意性地以一圓形表示其於前述之膠膜上切割成晶粒11且膠膜擴張而使晶粒11有間距後的狀態,通常係等同於該待選取膠膜20上晶粒11之分佈範圍,為簡化圖式,圖3並未繪製出該等晶粒11。圖4則為一部份晶粒11的示意圖,在本實施例中,此步驟b定義之選取範圍60係呈矩形,其中包含九十六顆晶粒11,然而,選取範圍60之形狀及其中包含之晶粒11數量不以此為限,如圖3所示,該選取範圍60可為圓形、長方形、正方形或其他任何形狀。該選取範圍60內的晶粒11在後續步驟中將同時被該頂推座32之一頂推面321頂推,因此,該選取範圍60之形狀及面積只要實質上符合該頂推座32之頂推面321的形狀及面積即可,換言之,該頂推座32之頂推面321亦可為圓形、長方形、正方形或其他任何形狀。實際上,可依照該頂推座32之頂推面321的形狀及面積定義該選取範圍60之形狀及面積,或者,該第一置晶裝置30可為能替換頂推座之形式,則可依照所需之選取範圍60的形狀及面積選用符合的頂推座32。在定義選取範圍60之前,可利用影像擷取裝置50朝向該黏著面21擷取該等晶粒11之影像,進而得到該等晶粒11之位置資訊,然後,在此步驟b中,由軟體劃分出選取範圍60,並由軟體自動選擇對應選取範圍60之頂推座32。The wafer 12 shown in FIG. 3 schematically shows a state in which the die 11 is cut into the die 11 on the aforementioned adhesive film and the die 11 is spaced by the die 11 with a circle, which is usually equivalent to the waiting state. The distribution range of the dies 11 on the adhesive film 20 is selected. In order to simplify the diagram, the dies 11 are not drawn in FIG. 3. Fig. 4 is a schematic diagram of a part of the dies 11. In this embodiment, the selection range 60 defined in step b is rectangular, which includes ninety-six dies 11. However, the shape of the selection range 60 and its The number of included dies 11 is not limited to this. As shown in FIG. 3, the selected range 60 can be round, rectangular, square or any other shape. The die 11 in the selection range 60 will be simultaneously pushed by one of the pushing surfaces 321 of the pushing seat 32 in the subsequent steps. Therefore, the shape and area of the selection range 60 should be substantially in line with the pushing surface 321 of the pushing seat 32. The shape and area of the pushing surface 321 are sufficient. In other words, the pushing surface 321 of the pushing seat 32 can also be round, rectangular, square or any other shape. In fact, the shape and area of the selection range 60 can be defined according to the shape and area of the pushing surface 321 of the pushing seat 32, or the first crystal placement device 30 can be in a form that can replace the pushing seat, or According to the shape and area of the required selection range 60, a suitable pushing seat 32 is selected. Before the selection range 60 is defined, the image capturing device 50 can be used to capture the images of the dies 11 toward the adhesive surface 21 to obtain the position information of the dies 11. Then, in this step b, the software The selection range 60 is divided, and the pusher 32 corresponding to the selection range 60 is automatically selected by the software.

c) 如圖1中所示之步驟S2及如圖5所示,挑除該選取範圍60之周圍的晶粒11,使得該選取範圍60受一晶粒挑除後所形成之分隔道62圍繞。意即,該分隔道62內未設置任何晶粒,用以將選取範圍60內的晶粒11與其他晶粒11分隔開。c) Step S2 shown in Fig. 1 and as shown in Fig. 5, pick out the crystal grains 11 around the selected range 60, so that the selected range 60 is surrounded by a partition 62 formed by picking out a crystal grain . That is, no crystal grains are provided in the separation channel 62 to separate the crystal grains 11 in the selected range 60 from other crystal grains 11.

此步驟c可採用任何習知用於挑選單顆晶粒之取放裝置進行,亦即一次挑除一顆晶粒11。本實施例之步驟c僅挑除該選取範圍60周圍的一圈晶粒11,使得該分隔道62之寬度僅略大於一該晶粒11之寬度,更明確地說,由於本實施例之選取範圍60係緊貼著其中最外圍之晶粒11邊緣,則分隔道62之寬度為所挑除之一顆晶粒的寬度加上其兩相對側之晶粒間距,而由於本實施例之晶粒11為長方形而具有二寬度D21、D22(D22>D21),使得分隔道62之水平區段寬度D11與垂直區段寬度D12不相等(D12>D11),亦即本實施例之分隔道62不等寬,不論分隔道是否等寬,其各區段之寬度應大於晶粒之平行於所述寬度之寬度,例如本實施例中該分隔道62之水平區段寬度D11大於晶粒11之寬度D21(寬度D21平行於寬度D11),且該分隔道62之垂直區段寬度D12大於晶粒11之寬度D22(寬度D22平行於寬度D12)。然而,此步驟c亦可挑除該選取範圍60周圍兩圈或兩圈以上的晶粒11,使得該分隔道62之寬度D11、D12分別大於兩顆或兩顆以上晶粒11之寬度D21、D22。此外,該分隔道62可整體皆等寬,亦可不等寬,且晶粒11亦可為正方形而僅具有單一寬度(即為最大寬度),只要分隔道62各區段之寬度D11、D12分別大於一該晶粒11之寬度D11、D22即可。This step c can be performed by any conventional pick-and-place device for selecting a single die, that is, one die 11 is removed at a time. Step c of this embodiment only picks out a circle of die 11 around the selection range 60, so that the width of the partition 62 is only slightly larger than the width of a die 11, more specifically, due to the selection of this embodiment The range 60 is close to the edge of the outermost die 11, and the width of the partition 62 is the width of the selected die plus the distance between the two opposite sides of the die, and since the die of this embodiment The grain 11 is rectangular and has two widths D21 and D22 (D22>D21), so that the horizontal section width D11 and the vertical section width D12 of the divider 62 are not equal (D12>D11), that is, the divider 62 of this embodiment Unequal width, regardless of whether the divider is of equal width or not, the width of each section should be greater than the width of the die parallel to the width. For example, the horizontal section width D11 of the divider 62 in this embodiment is greater than that of the die 11 The width D21 (the width D21 is parallel to the width D11), and the vertical section width D12 of the dividing lane 62 is greater than the width D22 of the die 11 (the width D22 is parallel to the width D12). However, this step c can also pick out two or more dies 11 around the selection range 60, so that the widths D11 and D12 of the partition 62 are respectively greater than the widths D21 and D21 of the two or more dies 11 D22. In addition, the divider 62 can have the same width or unequal width as a whole, and the die 11 can also be square with only a single width (that is, the maximum width), as long as the widths D11 and D12 of each section of the divider 62 are respectively It suffices to be greater than one width D11, D22 of the die 11.

如圖1中所示之步驟S3及如圖6至8所示,利用一頂推座32頂推該待選取膠膜20之一對應該選取範圍60之區塊25,而將該選取範圍60內之晶粒11壓抵並附著於一附著面43。詳而言之,本實施例之此步驟S3可細分為下列之步驟d、e及f。As shown in step S3 in FIG. 1 and as shown in FIGS. 6 to 8, an ejection seat 32 is used to push one of the plastic films 20 to be selected corresponding to the block 25 of the selection range 60, and the selection range 60 The inner die 11 is pressed against and attached to an attachment surface 43. In detail, this step S3 in this embodiment can be subdivided into the following steps d, e and f.

d) 如圖2及圖6所示,將該待選取膠膜20設置於第一置晶裝置30之基座31上,使得該待選取膠膜20之安裝面24面向該基座31,且該第一置晶裝置30之頂推座32的頂推面321面向該待選取膠膜20之安裝面24,該頂推座32之頂推面321的形狀及面積係實質上符合該選取範圍60之形狀及面積。d) As shown in Figures 2 and 6, the adhesive film 20 to be selected is placed on the base 31 of the first crystal placement device 30 so that the mounting surface 24 of the adhesive film 20 to be selected faces the base 31, and The pushing surface 321 of the pushing seat 32 of the first wafer placement device 30 faces the mounting surface 24 of the adhesive film 20 to be selected, and the shape and area of the pushing surface 321 of the pushing seat 32 substantially conform to the selected range The shape and area of 60.

更明確地說,該待選取膠膜20係以其安裝面24面向該基座31之一表面地鋪設於該表面上,且遮蔽該容置空間311於該表面之開口,使得該頂推座32位於該待選取膠膜20之安裝面24下方。More specifically, the to-be-selected adhesive film 20 is laid on a surface of the base 31 with its mounting surface 24 facing the surface, and shields the opening of the accommodating space 311 on the surface, so that the push seat 32 is located below the mounting surface 24 of the adhesive film 20 to be selected.

值得一提的是,此步驟d可在前述步驟a、b、c 完成後進行,亦即待選取膠膜20設置於基座31上時已黏附有晶粒11且晶粒11已完成定義選取範圍60及挑除選取範圍周圍晶粒11之步驟,如圖6所示。或者,此步驟d之順序亦可在前述步驟a之前,亦即,將晶粒11黏附於待選取膠膜20上時,待選取膠膜20已設置於基座31上。或者,此步驟d之順序亦可在前述步驟a之後但在步驟b、c之前,亦即,先將晶粒11黏附於待選取膠膜20,再將待選取膠膜20設置於第一置晶裝置30,再進行定義選取範圍60及挑除選取範圍周圍晶粒11之步驟。It is worth mentioning that this step d can be performed after the aforementioned steps a, b, and c are completed, that is, when the selected adhesive film 20 is set on the base 31, the die 11 has been adhered and the die 11 has been selected. The steps of selecting the range 60 and removing the die 11 around the selected range are shown in FIG. 6. Alternatively, the sequence of this step d may also be before the aforementioned step a, that is, when the die 11 is adhered to the adhesive film 20 to be selected, the adhesive film 20 to be selected is already set on the base 31. Alternatively, the sequence of this step d can also be after the aforementioned step a but before the steps b and c, that is, the die 11 is first adhered to the adhesive film 20 to be selected, and then the adhesive film 20 to be selected is placed on the first position. The crystal device 30 then performs the steps of defining the selection range 60 and picking out the die 11 around the selection range.

e) 如圖7所示,使該第一置晶裝置30與該第二置晶裝置40之相對位置處於一轉貼位置P,以使得該待選取膠膜20之黏著面21與該第二置晶裝置40之一附著面43相隔一預定距離D3地相面對。e) As shown in Figure 7, the relative position of the first crystal setting device 30 and the second crystal setting device 40 is at a transfer position P, so that the adhesive surface 21 of the to-be-selected adhesive film 20 is An attachment surface 43 of the crystal device 40 faces each other at a predetermined distance D3.

詳而言之,本實施例之第二置晶裝置40除了前述之基座41及頂推座42,更包含有一附著件,該附著件可為一置晶膠膜44(例如藍膜),如圖2所示,該置晶膠膜44包含有一基底層441,以及一覆蓋該基底層441一表面之黏膠層442,該基底層441之另一表面為一安裝面443,該黏膠層442顯露在外之表面即為該附著面43,該置晶膠膜44係以其安裝面443面向基座41之一表面地鋪設於該表面上,且遮蔽該容置空間411於該表面之開口,使得該頂推座42位於該置晶膠膜44之安裝面443上方。該頂推座42在後續步驟中將以其一面向該置晶膠膜44之安裝面443的頂推面421頂推該置晶膠膜44之局部。In detail, in addition to the aforementioned base 41 and the push seat 42, the second crystal placement device 40 of this embodiment further includes an attachment member, which can be a die placement film 44 (such as a blue film). As shown in FIG. 2, the die attach film 44 includes a base layer 441, and an adhesive layer 442 covering one surface of the base layer 441. The other surface of the base layer 441 is a mounting surface 443. The adhesive The surface of the layer 442 exposed to the outside is the attachment surface 43. The die attach film 44 is laid on the surface with the mounting surface 443 facing one surface of the base 41, and shields the accommodating space 411 on the surface. The opening allows the push seat 42 to be located above the mounting surface 443 of the crystal glue film 44. The pushing seat 42 will push a part of the crystal glue film 44 with its pushing surface 421 facing the mounting surface 443 of the crystal glue film 44 in a subsequent step.

該第一、二置晶裝置30、40的設置方式係使得該待選取膠膜20之黏著面21與該第二置晶裝置40之附著面43相互平行地相面對,且該第一、二置晶裝置30、40係能實質上垂直於黏著面21及附著面43地(亦即沿Z軸)相對位移,因此,在該影像擷取裝置50離開拍攝該待選取膠膜20之黏著面21的位置之後,該第一、二置晶裝置30、40可相對位移至轉貼位置P,此時其相隔之該預定距離D3係使得後續之步驟f僅需頂推座32、42移動即可進行。The first and second crystal placement devices 30, 40 are arranged in such a way that the adhesive surface 21 of the to-be-selected adhesive film 20 and the attachment surface 43 of the second crystal placement device 40 face each other in parallel, and the first, The two crystal devices 30 and 40 are capable of relative displacement substantially perpendicular to the adhesion surface 21 and the adhesion surface 43 (that is, along the Z axis). Therefore, the image capturing device 50 is moved away from the adhesive film 20 to be selected. After the position of the surface 21, the first and second crystal placement devices 30, 40 can be relatively displaced to the transfer position P. At this time, the predetermined distance D3 between them is such that the subsequent step f only needs to move the pushing seats 32, 42. Can proceed.

f) 如圖8所示,藉由頂推座32及/或基座31同時/單獨水平移動以及頂推座32垂直移動,亦即,使該頂推座32相對於該基座31移動,而以其頂推面321頂推該待選取膠膜20之一對應該選取範圍60之區塊25,進而將該選取範圍內60之晶粒11壓抵於該第二置晶裝置40之附著面43,此時該附著面43之附著力係大於該待選取膠膜20之黏著面21的黏著力,使得該選取範圍60內之晶粒11附著於該附著面43。f) As shown in Figure 8, by simultaneously/single horizontal movement of the pushing seat 32 and/or the base 31 and vertical movement of the pushing seat 32, that is, moving the pushing seat 32 relative to the base 31, The pushing surface 321 pushes one of the plastic films 20 to be selected corresponding to the block 25 of the selection range 60, and then presses the die 11 of the selection range 60 against the attachment of the second crystal placement device 40 At this time, the adhesive force of the adhesive surface 43 is greater than the adhesive force of the adhesive surface 21 of the adhesive film 20 to be selected, so that the die 11 within the selected range 60 is attached to the adhesive surface 43.

更明確地說,在該頂推座32原先之位置非對應該選取範圍60之情況下,藉由頂推座32及/或基座31同時/單獨水平移動,使得該頂推座32可以位處於對應該選取範圍60之位置,然後該頂推座32再朝該待選取膠膜20之方向垂直移動而頂推該待選取膠膜20之區塊25,此時該區塊25會產生彈性變形,而由於該選取範圍60之周圍並無晶粒,因此區塊25之彈性變形並不會影響到其他晶粒11。More specifically, when the original position of the pushing seat 32 does not correspond to the selected range 60, the pushing seat 32 and/or the base 31 are moved horizontally at the same time/singly, so that the pushing seat 32 can be positioned. At the position corresponding to the selection range 60, the pushing seat 32 then moves vertically in the direction of the film 20 to be selected to push the block 25 of the film 20 to be selected. At this time, the block 25 will be flexible Since there are no crystal grains around the selected range 60, the elastic deformation of the block 25 will not affect other crystal grains 11.

在本實施例之此步驟f中,亦同時使該第二置晶裝置40之頂推座42以其頂推面421頂推該置晶膠膜44之一對應該選取範圍60之區塊444,如此可減少頂推座32之位移量以及待選取膠膜20之區塊25的變形量,進而提高效率並避免待選取膠膜20損壞。該第二置晶裝置40之頂推座42的頂推面421係以實質上等同於選取範圍60之形狀及面積為較佳設計,但亦可大於選取範圍60。In this step f of the present embodiment, the ejector seat 42 of the second wafer placement device 40 is also made to push one of the wafer placement films 44 with its ejection surface 421 corresponding to the block 444 of the selected range 60 at the same time. In this way, the displacement of the pushing seat 32 and the deformation of the block 25 of the adhesive film 20 to be selected can be reduced, thereby improving efficiency and avoiding damage to the adhesive film 20 to be selected. The pushing surface 421 of the pushing seat 42 of the second crystal placement device 40 is preferably designed with a shape and area substantially equal to the selected range 60, but it can also be larger than the selected range 60.

如圖8所示,由於待選取膠膜20具有些許厚度,該區塊25被頂推到最高的平面(亦即被頂推之晶粒11所在之平面)係略大於頂推面321,被頂推之晶粒11的分布範圍又略小於所述平面且略小於頂推面321,而所述分布範圍、所述平面之範圍,以及介於二者之間的範圍皆可能為該選取範圍60,然而,所述平面、所述分布範圍與該頂推面321之間的差異實際上都相當小,在圖8中係放大顯示以便說明,因此,本發明所述「頂推面之形狀及面積實質上等同於選取範圍之形狀及面積」中,「實質上」的意思係將前述之微小差異視為無差異,換言之,本發明並非限制頂推面之形狀及面積必須完全等同於選取範圍之形狀及面積,只要頂推面與選取範圍之差異小於或等於頂推面與前述平面或分布範圍之差異,即屬於本發明所述「頂推面之形狀及面積實質上等同於選取範圍之形狀及面積」之界定範圍。As shown in FIG. 8, since the adhesive film 20 to be selected has a slight thickness, the block 25 is pushed to the highest plane (that is, the plane where the chip 11 is pushed) is slightly larger than the pushing surface 321, The distribution range of the pushed die 11 is slightly smaller than the plane and slightly smaller than the pushing surface 321, and the distribution range, the range of the plane, and the range in between may all be the selected range 60. However, the difference between the plane, the distribution range and the pushing surface 321 is actually quite small. It is shown enlarged in FIG. 8 for illustration. Therefore, the "shape of the pushing surface" in the present invention And area is substantially equivalent to the shape and area of the selected range", "substantially" means that the aforementioned small difference is regarded as no difference. In other words, the present invention does not limit the shape and area of the pushing surface to be completely equivalent to the selected The shape and area of the range, as long as the difference between the pushing surface and the selected range is less than or equal to the difference between the pushing surface and the aforementioned plane or distribution range, it belongs to the present invention "The shape and area of the pushing surface is substantially equivalent to the selected range "The shape and area of"

在該待選取膠膜20能經由解離步驟而降低黏著力之情況下,該第一置晶裝置30之頂推座32內可(但不限於)設有一解離作用件33,用以在該頂推座32頂推待選取膠膜20之區塊25時對該區塊25進行該解離步驟。例如,本實施例係以該待選取膠膜20為熱解離膠膜之情況為例,該解離作用件33為一加熱器,係用以於該待選取膠膜20上的晶粒11將要被轉移時對該待選取膠膜20之局部加熱而降低該黏著面21之黏著力。而在該待選取膠膜20為光解離膠膜之情況下,該解離作用件33為一發光器(例如UV燈),以於該待選取膠膜20上的晶粒11將要被轉移時對該待選取膠膜20之局部照射光線而降低該黏著面21之黏著力。而在該待選取膠膜20為可溫控解離膠膜之情況下,該解離作用件33為一控溫器,以於該待選取膠膜20上的晶粒11將要被轉移時對該待選取膠膜20之局部控制溫度而降低該黏著面21之黏著力。或者,該頂推座32內亦可不設有解離作用件33,而是由外部的加熱器、發光器或控溫器對該待選取膠膜20加熱、照光或控制溫度,該待選取膠膜20亦可先加熱、照光或控制溫度後再設置到基座31上。藉此,在該選取範圍60內之晶粒11被壓抵於該第二置晶裝置40之附著面43之前,該待選取膠膜20可經由該解離步驟而將其黏著面21之黏著力降低至小於該附著面43之附著力,使得被壓抵於附著面43之晶粒11輕易地被轉移至附著面43上,例如,在本實施例中,該解離步驟可於該頂推座32將要頂推該區塊25時或者該頂推座32頂推該區塊25的過程中進行。或者,該待選取膠膜20亦可為黏著力固定之膠膜,只要其黏著力小於該附著面43之附著力即可。In the case that the adhesive film 20 to be selected can reduce the adhesive force through the dissociation step, the pushing seat 32 of the first crystal placement device 30 may (but not limited to) be provided with a dissociation member 33 for placing it on the top When the pushing seat 32 pushes the block 25 of the adhesive film 20 to be selected, the dissociation step is performed on the block 25. For example, in this embodiment, the case where the adhesive film 20 to be selected is a thermally dissociated adhesive film is taken as an example, and the dissociation action member 33 is a heater for the die 11 on the adhesive film to be selected 20 to be During the transfer, the local heating of the adhesive film 20 to be selected reduces the adhesive force of the adhesive surface 21. In the case where the adhesive film to be selected 20 is a photodissociation adhesive film, the dissociation effect member 33 is a light emitter (such as a UV lamp) to correct when the die 11 on the adhesive film to be selected 20 is about to be transferred The part of the adhesive film 20 to be selected irradiates light to reduce the adhesive force of the adhesive surface 21. In the case where the to-be-selected film 20 is a temperature-controllable dissociation film, the dissociation member 33 is a temperature controller, so that when the die 11 on the to-be-selected film 20 is about to be transferred The local temperature control of the adhesive film 20 is selected to reduce the adhesive force of the adhesive surface 21. Alternatively, the dissociation member 33 may not be provided in the pushing seat 32, but an external heater, illuminator or temperature controller may heat, illuminate or control the temperature of the plastic film 20 to be selected. 20 can also be heated, illuminated or temperature controlled before being set on the base 31. Thereby, before the die 11 in the selection range 60 is pressed against the attachment surface 43 of the second crystal placement device 40, the to-be-selected adhesive film 20 can undergo the dissociation step to reduce the adhesive force of the adhesive surface 21 The adhesion force is reduced to less than the adhesion surface 43, so that the die 11 pressed against the adhesion surface 43 can be easily transferred to the adhesion surface 43. For example, in this embodiment, the dissociation step can be performed on the pushing seat 32 is about to push the block 25 or during the process of pushing the block 25 by the pushing seat 32. Alternatively, the adhesive film 20 to be selected can also be an adhesive film with a fixed adhesive force, as long as the adhesive force is less than the adhesive force of the adhesion surface 43.

該選取範圍60內之晶粒11附著於該附著面43之後,頂推座32、42分別退回容置空間311、411內,待選取膠膜20之區塊25及置晶膠膜44之區塊444也恢復原狀,如圖9所示,此時,附著於該附著面43之各該晶粒11係以其背面114附著於該附著面43而露出正面112。該第二置晶裝置40之頂推座42可(但不限於)設有多個貫穿其頂推面421之真空吸孔422,且該等真空吸孔422係與一真空源52連通,在該頂推座42頂推置晶膠膜44之後(例如頂推座42退回容置空間411的過程中),該真空源52透過該等真空吸孔422而於該頂推座42之頂推面421產生真空吸力而吸附該置晶膠膜44之區塊444,如此可快速地將置晶膠膜44之區塊444拉回原狀而平鋪於基座41上。After the die 11 in the selection range 60 is attached to the attachment surface 43, the push seats 32 and 42 are retracted into the accommodating spaces 311 and 411, respectively, and the area 25 of the adhesive film 20 and the area of the die-position adhesive film 44 are to be selected The block 444 also returns to its original shape, as shown in FIG. 9, at this time, each of the die 11 attached to the attachment surface 43 is attached to the attachment surface 43 with its back surface 114 to expose the front surface 112. The pushing seat 42 of the second crystal placement device 40 may (but not limited to) be provided with a plurality of vacuum suction holes 422 penetrating the pushing surface 421, and the vacuum suction holes 422 are connected with a vacuum source 52. After the pushing seat 42 pushes the crystal gel film 44 (for example, when the pushing seat 42 is retracted into the accommodating space 411), the vacuum source 52 pushes on the pushing seat 42 through the vacuum suction holes 422 The surface 421 generates a vacuum suction force to adsorb the block 444 of the crystal gel film 44, so that the block 444 of the crystal gel film 44 can be quickly pulled back to its original shape and laid flat on the base 41.

藉由前述本發明之多晶粒選取方法,可將該待選取膠膜20上一批量的晶粒11(亦即選取範圍60內的晶粒11)選取至該第二置晶裝置40之附著面43上,而若先對該待選取膠膜20上的晶粒11定義出多個選取範圍60,再使頂推座32、42以及基座31、41單獨或同時水平位移(例如由圖9之位置位移至圖10之位置),使得頂推座32、42可以位處於對應該等選取範圍60,進而分別對該等選取範圍60進行頂推步驟(亦即重複進行步驟f),即可將該待選取膠膜20上的晶粒11分批地選取至該第二置晶裝置40之附著面43上。By the aforementioned multi-die selection method of the present invention, a batch of die 11 on the adhesive film 20 to be selected (that is, die 11 in the selection range 60) can be selected to be attached to the second die placement device 40 On the surface 43, if a plurality of selection ranges 60 are defined for the die 11 on the adhesive film 20 to be selected, then the push seats 32, 42 and the bases 31, 41 are horizontally displaced separately or simultaneously (for example, as shown in the figure) The position of 9 is shifted to the position of Fig. 10), so that the pushing seats 32 and 42 can be positioned in the corresponding selection ranges 60, and then the pushing steps are performed on the selection ranges 60 respectively (that is, step f is repeated), namely The die 11 on the adhesive film 20 to be selected can be selected on the attachment surface 43 of the second die placement device 40 in batches.

值得一提的是,本發明之多晶粒選取方法應用於將晶粒分類或分等級放置的情況下,通常會將不同類或不同等級的晶粒黏貼到不同膠膜上,此膠膜即為前述之置晶膠膜44,因此,可能會有複數第二置晶裝置40,以供不同選取範圍60之晶粒11被選取至不同的第二置晶裝置40之附著面43上。It is worth mentioning that when the method for selecting multiple crystal grains of the present invention is applied to classify or place the crystal grains in grades, usually different types or grades of crystal grains are glued to different adhesive films. It is the aforementioned die placement glue film 44, therefore, there may be a plurality of second die placement devices 40 for the die 11 of different selection ranges 60 to be selected on the attachment surfaces 43 of different second die placement devices 40.

藉此,本發明之多晶粒選取方法不需藉由多個取放裝置,即可在一次的選取作動中同時選取多個晶粒11而產生良好之效率。而且,藉由在轉移晶粒11之前先挑除選取範圍60周圍之晶粒11,可避免在頂推待選取膠膜20時破壞選取範圍60周圍之晶粒11,或者誤將選取範圍60周圍之晶粒11也轉移至第二置晶裝置40的附著面43,因此可提升晶粒轉移之準確性。Thereby, the multi-die selection method of the present invention does not need to use multiple pick-and-place devices, and multiple die 11 can be selected at the same time in a single selection operation to produce good efficiency. Moreover, by first removing the dies 11 around the selection range 60 before transferring the dies 11, it is possible to avoid destroying the dies 11 around the selection range 60 when pushing the film 20 to be selected, or mistakenly placing the dies 11 around the selection range 60 The die 11 is also transferred to the attachment surface 43 of the second die placement device 40, so the accuracy of die transfer can be improved.

值得一提的是,該第二置晶裝置40亦可為不設有頂推座42之形式,則其基座41為一平台而不具有該容置空間411,在此狀況下,由於該置晶膠膜44不需受到頂推,因此該置晶膠膜44亦可替換為其他非膠膜之附著件(圖中未示),舉例而言,該附著件可為一可導電之板體(例如金屬板)且電性連接至一靜電產生器(圖中未示),以藉由該靜電產生器所提供之靜電而於該附著件之附著面產生附著力(亦即靜電吸附力);或者,該附著件可為一設有多個真空吸孔(圖中未示)之板體,且該等真空吸孔係與一真空源(圖中未示)連通,以藉由該真空源透過該等真空吸孔而使該附著件之附著面產生附著力(亦即真空吸附力)。尤其,該第二置晶裝置40亦可能為一翻面裝置,則該第二置晶裝置40更可能為不設有頂推座之形式,並採用如前述之附著件。而在該第二置晶裝置40為翻面裝置之情況下,步驟a係使各該晶粒11以其背面114黏附於待選取膠膜20之黏著面21而露出正面112,而晶粒11轉移至該第二置晶裝置40時則係以正面112附著於該附著面43而露出背面114,然後,該第二置晶裝置40再將該等晶粒11轉貼至另一置晶膠膜(圖中未示)而使各該晶粒11露出正面112。It is worth mentioning that the second crystal placement device 40 can also be in a form without the pushing seat 42, and the base 41 is a platform without the accommodating space 411. In this case, due to the The die attach film 44 does not need to be pushed, so the die attach film 44 can also be replaced with other non-adhesive film attachments (not shown in the figure). For example, the attaching member can be a conductive plate Body (such as a metal plate) and electrically connected to an electrostatic generator (not shown in the figure) to generate adhesion on the adhesion surface of the attachment by the static electricity provided by the electrostatic generator (that is, electrostatic attraction ); Or, the attachment can be a plate provided with a plurality of vacuum suction holes (not shown in the figure), and the vacuum suction holes are connected with a vacuum source (not shown in the figure) to use the The vacuum source passes through the vacuum suction holes to cause the adhesion surface of the attachment to produce adhesion (that is, vacuum suction). In particular, the second crystal setting device 40 may also be a turning device, and the second crystal setting device 40 is more likely to be in a form without a push seat and adopt the aforementioned attachment. In the case where the second crystal placement device 40 is a flipping device, step a is to make each of the die 11 adhere to the adhesive surface 21 of the adhesive film 20 to be selected with its back surface 114 to expose the front surface 112, and the die 11 When transferred to the second wafer placement device 40, the front surface 112 is attached to the attachment surface 43 and the back surface 114 is exposed. Then, the second wafer placement device 40 transfers the die 11 to another wafer placement film. (Not shown in the figure) so that each of the die 11 is exposed to the front surface 112.

此外,該第一置晶裝置30亦可不設有頂推座32,而僅有該第二置晶裝置40設有頂推座42,在定義選取範圍60以及挑除選取範圍60周圍的晶粒11之後,則利用該頂堆座42頂推置晶膠膜44而將選取範圍60內之晶粒11壓抵並附著於該附著面43。如前所述,該頂推座42的頂推面421係以實質上等同於選取範圍60之形狀及面積為較佳設計,但亦可大於選取範圍60,而在第一置晶裝置30不設有頂推座32而使得被選取之晶粒11未被頂高的情況下,該第二置晶裝置40之頂推座42的頂推面421仍可略大於選取範圍60但不超出選取範圍60周圍之分隔道62,以避免黏取分隔道62外圍未被選取之晶粒11,換言之,該頂推座42頂推之區塊444係對應該選取範圍60,或者對應該選取範圍60及至少部分之該分隔道62。In addition, the first crystal setting device 30 may not be provided with the pushing seat 32, and only the second crystal setting device 40 is provided with the pushing seat 42, which defines the selection range 60 and picks out the die around the selection range 60 After 11, the top stack 42 is used to push the crystal glue film 44 to press the die 11 in the selected range 60 and adhere to the attachment surface 43. As mentioned above, the pushing surface 421 of the pushing seat 42 is preferably designed with a shape and area substantially equivalent to the selected range 60, but it can also be larger than the selected range 60, and the first crystal placement device 30 does not In the case where the pushing seat 32 is provided so that the selected die 11 is not raised, the pushing surface 421 of the pushing seat 42 of the second crystal placement device 40 can still be slightly larger than the selection range 60 but not beyond the selection The partition 62 around the range 60 avoids sticking the unselected die 11 at the periphery of the partition 62. In other words, the block 444 pushed by the pushing seat 42 corresponds to the selected range 60 or corresponds to the selected range 60 And at least part of the partition 62.

在該第一置晶裝置30不設有頂推座32之情況下,其基座31為一平台而不具有該容置空間311,在此狀況下,由於該待選取膠膜20不需受到頂推,因此該待選取膠膜20亦可替換為其他非膠膜之附著件(圖中未示),換言之,待選取之晶粒11係附著於一待選取附著件之附著面上,該待選取附著件可為如前述之待選取膠膜20(附著面即為黏著面21),但不以此為限。舉例而言,該待選取附著件如同前述之第二置晶裝置40之附著件,可為一能藉由一靜電產生器而於附著面產生靜電吸附力之板體,或者一設有多個真空吸孔而能藉由一真空源而於附著面產生真空吸附力之板體。In the case that the first crystal placement device 30 is not provided with the pushing seat 32, the base 31 is a platform without the accommodating space 311. In this case, the adhesive film 20 to be selected does not need to be subjected to Therefore, the adhesive film 20 to be selected can be replaced with other non-adhesive film attachments (not shown in the figure). In other words, the die 11 to be selected is attached to the attachment surface of an attachment to be selected. The attachment to be selected may be the adhesive film 20 to be selected as described above (the attachment surface is the adhesive surface 21), but is not limited to this. For example, the attachment member to be selected is the same as the attachment member of the second crystal placement device 40 mentioned above. It can be a plate body that can generate electrostatic adsorption force on the attachment surface by an electrostatic generator, or one with multiple The vacuum suction hole can generate vacuum suction force on the attachment surface by a vacuum source.

如前所述,步驟a、b、c及d之順序有多種可能性,挑除選取範圍60周圍晶粒11之步驟c可不在第一置晶裝置30上進行,亦即與後續轉移選取範圍60內晶粒11之步驟f係在不同機台上進行;或者,挑除選取範圍60周圍晶粒11之步驟c亦可在第一置晶裝置30之基座31上進行,亦即與後續轉移選取範圍60內晶粒11之步驟f係在同一機台上進行。在步驟c係於第一置晶裝置30之基座31上進行的情況下,除了可利用其他取放裝置挑除選取範圍之周圍的晶粒11,亦可採用能替換頂推座之第一置晶裝置30,並使該第一置晶裝置30以另一頂推座34頂推該待選取膠膜20設有待挑除之晶粒11的部位而使受頂推之晶粒11附著於一附著件54,如圖11所示,該附著件54可為另一膠膜(例如藍膜),且可設置於類同第一置晶裝置30的另一置晶裝置56上,使該置晶裝置56以其一類同頂推座34之頂推座562頂推該附著件54進而黏附待挑除之晶粒11,或者,亦可直接採用第二置晶裝置40作為該置晶裝置56,並在步驟c進行時將該置晶膠膜44先替換為該附著件54。As mentioned above, there are many possibilities for the sequence of steps a, b, c, and d. The step c of picking out the die 11 around the selection range 60 may not be performed on the first die placement device 30, that is, with subsequent transfer of the selection range Step f of die 11 in 60 is performed on a different machine; alternatively, step c of picking out die 11 around selected range 60 can also be performed on base 31 of first die placement device 30, that is, with The step f of transferring the die 11 in the selected range 60 is performed on the same machine. In the case that step c is performed on the base 31 of the first crystal placement device 30, in addition to using other pick-and-place devices to pick out the die 11 around the selected range, the first chip that can replace the ejector seat can also be used. The chip placement device 30, and the first chip placement device 30 uses another pushing seat 34 to push the portion of the to-be-selected adhesive film 20 where the chip 11 to be removed is provided so that the chip 11 to be pushed is attached to An attachment 54. As shown in FIG. 11, the attachment 54 may be another adhesive film (such as a blue film), and may be set on another wafer placement device 56 similar to the first wafer placement device 30, so that the The wafer placement device 56 pushes the attachment member 54 with a push seat 562 similar to the push seat 34 to adhere the die 11 to be removed, or the second wafer placement device 40 can be directly used as the wafer placement device. 56, and when step c is performed, the crystal placement glue film 44 is first replaced with the attachment member 54.

如圖12所示,本發明一第二較佳實施例所提供之多晶粒選取方法10’與前述之多晶粒選取方法10的差異主要在於對該等晶粒11定義選取範圍60的步驟,亦即步驟b。As shown in FIG. 12, the difference between the multi-die selection method 10' provided by a second preferred embodiment of the present invention and the aforementioned multi-die selection method 10 is mainly the step of defining the selection range 60 for the dice 11 , That is, step b.

如圖12中所示之步驟S11及如圖13所示,本實施例之步驟b係先定義一總選取範圍60’,其中包含所欲選取之複數晶粒11;如圖12中所示之步驟S12及S13,若該總選取範圍60’之形狀及面積實質上等同於頂推座32之頂推面321的形狀及面積,或者可由該第一置晶裝置30能替換之頂推座中選用頂推面之形狀及面積實質上等同於該總選取範圍60’之形狀及面積的頂推座32,則該總選取範圍60’即為前述之多晶粒選取方法10的選取範圍60,則執行前述之多晶粒選取方法10即可,亦即如圖12中所示之步驟S21及S31。As shown in step S11 in FIG. 12 and as shown in FIG. 13, step b of this embodiment is to first define a total selection range 60', which includes the plurality of dies 11 to be selected; Steps S12 and S13, if the shape and area of the total selection range 60' are substantially equal to the shape and area of the pushing surface 321 of the pushing seat 32, or the pushing seat can be replaced by the first crystal placement device 30 Selecting the pushing seat 32 whose shape and area of the pushing surface is substantially equal to the shape and area of the total selection range 60', then the total selection range 60' is the selection range 60 of the aforementioned method 10 of polycrystalline selection. It is sufficient to execute the aforementioned method 10 for selecting multiple crystal grains, that is, steps S21 and S31 as shown in FIG. 12.

若沒有對應該總選取範圍60’之形狀的頂推座,或者該總選取範圍60’之面積遠大於可用之頂推座的頂推面面積,則於該總選取範圍60’內劃分出複數選取範圍60,如圖12中所示之步驟S14;例如,圖13所示之總選取範圍60’劃分出六個選取範圍60。然後,如圖12中所示之步驟S22,先挑除該等選取範圍60之周圍的晶粒11,如圖14所示,亦即,除了在該總選取範圍60’周圍形成出一環形之主要分隔道62’,更在該等選取範圍60之間形成複數縱橫交錯之次要分隔道64,如此一來,每一選取範圍60周圍都有由部分之主要分隔道62’及部分之次要分隔道64組成之環形的分隔道。然後,如圖12中所示之步驟S32,在該第一置晶裝置30與該第二置晶裝置40處於轉貼位置P時,再分別針對該等選取範圍60進行利用頂推座32、42頂推膠膜20、44而轉移晶粒11之步驟,亦即以前述之頂推座32、42水平位移以及重複進行步驟f的方式分批轉移晶粒11。藉此,本實施例之多晶粒選取方法10’亦可同時選取多個晶粒11而達到良好效率,並可避免未被選取之晶粒11受到頂推座32影響。If there is no pusher seat corresponding to the shape of the total selection range 60', or the area of the total selection range 60' is much larger than the pushing surface area of the available pusher seat, then a plurality of numbers are divided into the total selection range 60' The selection range 60 is shown in step S14 in FIG. 12; for example, the total selection range 60' shown in FIG. 13 is divided into six selection ranges 60. Then, in step S22 as shown in FIG. 12, first pick out the crystal grains 11 around the selection range 60, as shown in FIG. 14, that is, except for forming a ring shape around the total selection range 60' The main dividing road 62' further forms a plurality of criss-crossing secondary dividing roads 64 between the selected ranges 60. As a result, each selection range 60 is surrounded by a partial main dividing road 62' and a partial secondary To divide the ring 64 composed of dividers. Then, as shown in step S32 in FIG. 12, when the first crystal setting device 30 and the second crystal setting device 40 are in the reposting position P, the push seats 32, 42 are used for the selected ranges 60 respectively. The step of pushing the adhesive films 20 and 44 to transfer the dies 11 is to transfer the dies 11 in batches by horizontal displacement of the aforementioned pushing seats 32 and 42 and repeating step f. Therefore, the multi-die selection method 10' of the present embodiment can also select multiple die 11 at the same time to achieve good efficiency, and can prevent the unselected die 11 from being affected by the push seat 32.

最後,必須再次說明,本發明於前揭實施例中所揭露的構成元件,僅為舉例說明,並非用來限制本案之範圍,其他等效元件的替代或變化,亦應為本案之申請專利範圍所涵蓋。Finally, it must be explained again that the constituent elements disclosed in the previously disclosed embodiments of the present invention are only examples and are not used to limit the scope of the case. Alternatives or changes to other equivalent elements should also be the scope of the patent application for this case. Covered.

10、10’‧‧‧多晶粒選取方法11‧‧‧晶粒112‧‧‧正面114‧‧‧背面12‧‧‧晶圓20‧‧‧待選取膠膜21‧‧‧黏著面22‧‧‧基底層23‧‧‧黏膠層24‧‧‧安裝面25‧‧‧區塊30‧‧‧第一置晶裝置31‧‧‧基座311‧‧‧容置空間32‧‧‧頂推座321‧‧‧頂推面33‧‧‧解離作用件34‧‧‧頂推座40‧‧‧第二置晶裝置41‧‧‧基座411‧‧‧容置空間42‧‧‧頂推座421‧‧‧頂推面422‧‧‧真空吸孔43‧‧‧附著面44‧‧‧置晶膠膜(附著件)441‧‧‧基底層442‧‧‧黏膠層443‧‧‧安裝面444‧‧‧區塊50‧‧‧影像擷取裝置52‧‧‧真空源54‧‧‧附著件56‧‧‧置晶裝置562‧‧‧頂推座60‧‧‧選取範圍60’‧‧‧總選取範圍62‧‧‧分隔道62’‧‧‧主要分隔道64‧‧‧次要分隔道D11、D12、D21、D22‧‧‧寬度D3‧‧‧預定距離P‧‧‧轉貼位置S1~S3、S11~S14、S21、S22、S31、S32‧‧‧步驟10、10'‧‧‧Multi-die selection method 11‧‧‧Die 112‧‧‧Front 114‧‧‧Back 12‧‧‧Wafer 20‧‧‧Adhesive film to be selected 21‧‧‧Adhesive surface 22‧ ‧‧Base layer 23‧‧‧Adhesive layer 24‧‧‧Mounting surface 25‧‧‧Block 30‧‧‧First crystal placement device 31‧‧‧Base 311‧‧‧Accommodating space 32‧‧‧Top Push seat 321‧‧‧ Push surface 33‧‧‧Dissociation member 34‧‧‧ Push seat 40‧‧‧Second crystal placement device 41‧‧‧Base 411‧‧‧Accommodation space 42‧‧‧Top Push seat 421‧‧‧Pushing surface 422‧‧‧Vacuum suction hole 43‧‧‧Attaching surface 44‧‧‧Possing crystal glue film (attachment) 441‧‧‧Base layer 442‧‧‧Adhesive layer 443‧‧ ‧Mounting surface 444‧‧‧Block 50‧‧‧Image capture device 52‧‧‧Vacuum source 54‧‧‧Attachment 56‧‧‧Crystal device 562‧‧‧Pushing seat 60‧‧‧Selection range 60 '‧‧‧Total selection range 62‧‧‧Separation road 62'‧‧‧Main separation road 64‧‧‧Secondary separation road D11, D12, D21, D22‧‧‧Width D3‧‧‧Predetermined distance P‧‧‧ Repost position S1~S3, S11~S14, S21, S22, S31, S32‧‧‧Step

圖1為本發明一第一較佳實施例所提供之多晶粒選取方法的流程圖。 圖2為進行該多晶粒選取方法所使用之機台的剖視示意圖。 圖3及圖4為該多晶粒選取方法之步驟b的示意圖。 圖5為該多晶粒選取方法之步驟c的示意圖。 圖6係類同於圖2,惟顯示已進行步驟c之後的狀態。 圖7及圖8係類同於圖6,惟分別顯示該多晶粒選取方法之步驟e及f。 圖9係類同於圖7,惟顯示已進行步驟f之後的狀態,且圖9中更顯示出一真空源。 圖10係類同於圖9,惟顯示將再次進行步驟f的狀態,且圖10中未顯示出該真空源及一影像擷取裝置。 圖11為該機台用於進行步驟c時的剖視示意圖。 圖12為本發明一第二較佳實施例所提供之多晶粒選取方法的流程圖。 圖13及圖14分別為該多晶粒選取方法之步驟b及c的示意圖。FIG. 1 is a flow chart of a method for selecting multiple crystal grains according to a first preferred embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of a machine used in the method for selecting multiple crystal grains. 3 and 4 are schematic diagrams of step b of the method for selecting multiple crystal grains. FIG. 5 is a schematic diagram of step c of the method for selecting multiple crystal grains. Figure 6 is similar to Figure 2, but shows the state after step c has been performed. Figures 7 and 8 are similar to Figure 6, but respectively show steps e and f of the method for selecting multiple crystal grains. Fig. 9 is similar to Fig. 7 except that it shows the state after step f has been performed, and Fig. 9 further shows a vacuum source. FIG. 10 is similar to FIG. 9 except that it shows the state where step f will be performed again, and the vacuum source and an image capture device are not shown in FIG. 10. Figure 11 is a schematic cross-sectional view of the machine used to perform step c. FIG. 12 is a flowchart of a method for selecting multiple crystal grains according to a second preferred embodiment of the present invention. 13 and 14 are schematic diagrams of steps b and c of the method for selecting multiple crystal grains, respectively.

10‧‧‧多晶粒選取方法 10‧‧‧Multi-grain selection method

S1~S3‧‧‧步驟 S1~S3‧‧‧Step

Claims (22)

一種多晶粒選取方法,包含有下列步驟: 對一黏附有複數晶粒之待選取膠膜定義一選取範圍,該選取範圍內包含該複數晶粒中的一部分且該部分包含複數該晶粒; 挑除該選取範圍之周圍的晶粒,使得該選取範圍受一晶粒挑除後所形成之分隔道圍繞;以及 利用一頂推座頂推該待選取膠膜之一對應該選取範圍之區塊,而將該選取範圍內之晶粒壓抵並附著於一附著面。A method for selecting multiple crystal grains includes the following steps: defining a selection range for a to-be-selected adhesive film with a plurality of crystal grains attached thereto, the selection range including a part of the plurality of crystal grains and the portion including a plurality of the crystal grains; Picking out the surrounding crystal grains of the selected range so that the selected range is surrounded by a partition formed by the removal of a crystal grain; and using an ejector seat to push one of the to-be-selected film films corresponding to the selected range Block, and the selected crystal grains are pressed against and attached to an attachment surface. 如申請專利範圍第1項所述之多晶粒選取方法,其中該待選取膠膜具有一黏著面,該黏著面黏附有該複數晶粒,該待選取膠膜為一熱解離膠膜、一光解離膠膜及一可溫控解離膠膜三者其中之一;在該選取範圍內之晶粒被壓抵於該附著面之前,所述多晶粒選取方法更包含有一解離步驟,該解離步驟為對該熱解離膠膜加熱、對該光解離膠膜照射光線及對該可溫控解離膠膜控制溫度三者其中之一而使該待選取膠膜之黏著面的黏著力下降。For the multi-die selection method described in item 1 of the scope of patent application, the adhesive film to be selected has an adhesive surface, the adhesive surface is adhered to the plurality of die, and the adhesive film to be selected is a thermally dissociated adhesive film, a One of a photodissociation film and a temperature-controllable dissociation film; before the crystal grains in the selected range are pressed against the attachment surface, the method for selecting multiple crystal grains further includes a dissociation step, the dissociation The steps include heating the thermally dissociated adhesive film, irradiating light to the photo-dissociated adhesive film, and controlling the temperature of the temperature-controllable dissociating adhesive film to reduce the adhesive force of the adhesive surface of the adhesive film to be selected. 如申請專利範圍第2項所述之多晶粒選取方法,其中該頂推座內設有一解離作用件,該解離作用件為一加熱器、一發光器及一控溫器三者其中之一,該解離步驟係由該解離作用件對該待選取膠膜之對應該選取範圍之區塊進行。The method for selecting multiple crystal grains as described in item 2 of the scope of patent application, wherein a dissociation member is provided in the pushing seat, and the dissociation member is one of a heater, a light emitting device, and a temperature controller , The dissociation step is performed by the dissociation action member on the area corresponding to the selected range of the film to be selected. 如申請專利範圍第1項所述之多晶粒選取方法,其中該頂推座係將該選取範圍內之晶粒壓抵並附著於一附著件,該附著件具有該附著面,該附著件為一具有黏著力之膠膜、一能產生靜電吸附力之板體及一能產生真空吸附力之板體三者其中之一。The method for selecting multiple crystal grains as described in item 1 of the scope of patent application, wherein the pushing seat presses the crystal grains in the selected range and attaches it to an attachment member, the attachment member has the attachment surface, and the attachment member It is one of an adhesive film, a plate that can generate electrostatic adsorption, and a plate that can generate vacuum adsorption. 如申請專利範圍第1項所述之多晶粒選取方法,其中對黏附有該複數晶粒之待選取膠膜定義該選取範圍的步驟中,係先定義一總選取範圍,再於該總選取範圍內劃分出複數該選取範圍,在劃分出該等選取範圍之後,係先挑除該等選取範圍之周圍的晶粒,再分別針對該等選取範圍進行使該頂推座頂推該待選取膠膜之步驟。For example, in the multi-die selection method described in item 1 of the patent application, in the step of defining the selection range for the adhesive film to be selected with the plural crystal grains attached, a total selection range is first defined, and then the total selection A plurality of the selection ranges are divided within the range. After the selection ranges are divided, the surrounding crystal grains of the selection ranges are first selected, and then the pushing seats are pushed against the selection ranges respectively. The steps of the film. 如申請專利範圍第1項所述之多晶粒選取方法,其中該頂推座係以其一頂推面頂推該待選取膠膜,該頂推面之形狀及面積係實質上符合該選取範圍之形狀及面積。For example, the multi-die selection method described in item 1 of the scope of patent application, wherein the push seat pushes the to-be-selected film with one push surface, and the shape and area of the push surface substantially conform to the selection The shape and area of the range. 如申請專利範圍第1項所述之多晶粒選取方法,其中該分隔道各區段之寬度係大於至少一該晶粒之平行於所述寬度之寬度。The method for selecting multiple crystal grains as described in the first item of the patent application, wherein the width of each section of the partition is greater than the width of at least one crystal grain parallel to the width. 如申請專利範圍第1項所述之多晶粒選取方法,其中利用該頂推座頂推該待選取膠膜之步驟中,該待選取膠膜係設置於一第一置晶裝置之一基座上,該頂推座係能移動地設置於該基座內,該待選取膠膜之一安裝面面向該基座及該頂推座之一頂推面,該複數晶粒黏附於該待選取膠膜之一與該安裝面朝向相反方向之黏著面,該頂推座係相對於該基座朝該待選取膠膜之方向移動而以其頂推面頂推該待選取膠膜之對應該選取範圍之區塊。For the multi-die selection method described in item 1 of the scope of patent application, in the step of using the ejector seat to push the film to be selected, the film to be selected is set on a base of a first crystal placement device On the seat, the pushing seat is movably arranged in the base, one of the mounting surfaces of the to-be-selected adhesive film faces the base and one pushing surface of the pushing seat, and the plurality of dies adhere to the Select one of the adhesive surfaces facing the opposite direction to the mounting surface, and the pushing seat moves relative to the base in the direction of the to-be-selected plastic film to push the opposite side of the to-be-selected plastic film with its pushing surface The block of the range should be selected. 如申請專利範圍第8項所述之多晶粒選取方法,其中在利用該頂推座頂推該待選取膠膜之步驟之前,先使該第一置晶裝置與一第二置晶裝置之相對位置處於一轉貼位置,該第二置晶裝置包含有一附著件,該附著件具有該附著面,當該第一置晶裝置與該第二置晶裝置之相對位置處於該轉貼位置時,該待選取膠膜之黏著面與該第二置晶裝置之附著面係相隔一預定距離地相面對。For the multi-die selection method described in item 8 of the scope of the patent application, before the step of pushing the film to be selected by the ejector seat, the first die placement device and the second die placement device The relative position is in a reposting position, and the second crystal setting device includes an attachment member having the attachment surface. When the relative position of the first crystal setting device and the second crystal setting device is in the reposting position, the The adhesion surface of the adhesive film to be selected and the adhesion surface of the second crystal placement device face each other at a predetermined distance. 如申請專利範圍第9項所述之多晶粒選取方法,其中該第二置晶裝置包含有一基座,以及一能移動地設置於該第二置晶裝置之基座內的頂推座,該附著件為一置晶膠膜且設置於該第二置晶裝置之基座上,該置晶膠膜具有一與該附著面朝向相反方向且面向該第二置晶裝置之基座的安裝面,該第二置晶裝置之頂推座具有一面向該置晶膠膜之安裝面的頂推面,該第二置晶裝置之頂推座的頂推面之面積係大於或等於該選取範圍之面積;在使該第一置晶裝置之頂推座以其頂推面頂推該待選取膠膜之對應該選取範圍之區塊時,亦使該第二置晶裝置之頂推座以其頂推面頂推該置晶膠膜之一對應該選取範圍之區塊,該第二置晶裝置之頂推座具有複數貫穿其頂推面之真空吸孔,在該第二置晶裝置之頂推座以其頂推面頂推該置晶膠膜之後,使一真空源透過該等真空吸孔而於該第二置晶裝置之頂推座的頂推面產生真空吸力而吸附該置晶膠膜。According to the method for selecting multiple crystal grains according to item 9 of the scope of patent application, wherein the second crystal placement device includes a base and an ejector seat movably arranged in the base of the second crystal placement device, The attachment is a die-attach film and is disposed on the base of the second die-attach device, and the die-attach film has an installation facing the opposite direction to the attaching surface and facing the base of the second die-attach device The ejector seat of the second wafer placement device has an ejector surface facing the mounting surface of the wafer placement adhesive film, and the area of the ejector surface of the ejector seat of the second wafer placement device is greater than or equal to the selection The area of the range; when the ejector seat of the first crystal placement device pushes the area of the selected film corresponding to the selected area with its ejection surface, the ejector seat of the second wafer placement device is also used One of the wafer placement adhesive films is pushed by its pushing surface to a block corresponding to the selected range. The pushing seat of the second wafer placement device has a plurality of vacuum suction holes penetrating the pushing surface. After the ejector seat of the device pushes the wafer placement film with its ejector surface, a vacuum source is passed through the vacuum suction holes to generate vacuum suction on the ejector surface of the second wafer placement device to attract The set crystal glue film. 如申請專利範圍第8項所述之多晶粒選取方法,其中挑除該選取範圍之周圍的晶粒之步驟係在該待選取膠膜設置於該第一置晶裝置之基座上時進行。The method for selecting multiple crystal grains as described in item 8 of the scope of patent application, wherein the step of picking out the crystal grains around the selected range is performed when the film to be selected is set on the base of the first crystal placement device . 如申請專利範圍第11項所述之多晶粒選取方法,其中該第一置晶裝置係能替換其頂推座,在挑除該選取範圍之周圍的晶粒之步驟中,係使該第一置晶裝置以另一頂推座頂推該待選取膠膜設有待挑除之晶粒的部位而使受頂推之晶粒附著於一附著件。For the multi-die selection method described in item 11 of the scope of patent application, the first die placement device can replace its pushing seat, and in the step of picking out the surrounding die of the selected range, the first die A crystal placement device uses another pushing seat to push the part of the plastic film to be selected where the chip to be removed is provided so that the chip to be pushed is attached to an attachment member. 如申請專利範圍第8項所述之多晶粒選取方法,其中該第一置晶裝置係能替換頂推座,在定義該選取範圍之前,利用一影像擷取裝置取得該等晶粒之位置資訊,然後由軟體劃分該選取範圍並自動選擇對應該選取範圍之頂推座。For the multi-die selection method described in item 8 of the scope of patent application, the first die placement device can replace the ejector seat, and before defining the selection range, an image capturing device is used to obtain the positions of the die Information, and then the software divides the selection range and automatically selects the pusher that corresponds to the selection range. 如申請專利範圍第1項所述之多晶粒選取方法,其中該等晶粒黏附於該待選取膠膜時,各該晶粒係以其一正面黏附於該待選取膠膜而露出各該晶粒之一背面,該頂推座係將該選取範圍內之晶粒壓抵並附著於一附著件,該附著件為一置晶膠膜且具有該附著面,該等晶粒附著於該附著面時,各該晶粒係以其背面黏附於該附著面而露出正面;或者,該等晶粒黏附於該待選取膠膜時,各該晶粒係以其一背面黏附於該待選取膠膜而露出各該晶粒之一正面,該頂推座係將該選取範圍內之晶粒壓抵並附著於一翻面裝置之一附著件,該附著件具有該附著面,該等晶粒附著於該翻面裝置之附著面時,各該晶粒係以其正面附著於該附著面而露出背面,然後該翻面裝置再將該等晶粒轉貼至一置晶膠膜。For example, in the multi-die selection method described in item 1 of the patent application, when the die is attached to the to-be-selected film, each of the die is attached to the to-be-selected film with its front side to expose each of the On the back of one of the dice, the push seat presses the dice in the selected range and attaches it to an attachment member, the attachment member is a crystal glue film and has the attachment surface, and the die is attached to the When attaching the surface, each die is attached to the attaching surface with its back surface to expose the front surface; or, when the die is attached to the adhesive film to be selected, each die is attached to the attaching surface with its back The glue film exposes one of the front faces of each of the crystal grains, and the push seat presses the selected crystal grains against and attaches them to an attachment member of a turning device. The attachment member has the attachment surface, and the die When the grains are attached to the attachment surface of the flipping device, each die is attached to the attachment surface with its front surface to expose the back surface, and then the flipping device transfers the die to a wafer placement film. 如申請專利範圍第1項所述之多晶粒選取方法,其中挑除該選取範圍之周圍的晶粒之步驟係一次挑除一該晶粒。In the method for selecting multiple crystal grains as described in the first item of the patent application, the step of removing the surrounding crystal grains of the selected range is to remove the crystal grains one at a time. 一種多晶粒選取方法,包含有下列步驟: 對一附著有複數晶粒之待選取附著件定義一選取範圍,該選取範圍內包含該複數晶粒中的一部分且該部分包含複數該晶粒; 挑除該選取範圍之周圍的晶粒,使得該選取範圍受一晶粒挑除後所形成之分隔道圍繞;以及 利用一頂堆座頂推一面對該待選取附著件的置晶膠膜之一對應該選取範圍或對應該選取範圍及至少部分之該分隔道的區塊,而將該選取範圍內之晶粒壓抵並附著於該置晶膠膜之一附著面上。A method for selecting multiple crystal grains includes the following steps: defining a selection range for a to-be-selected attachment member attached with a plurality of crystal grains, the selection range includes a part of the plurality of crystal grains and the part includes a plurality of the crystal grains; Picking out the surrounding crystal grains of the selected range, so that the selected range is surrounded by a separation channel formed after the picking of the crystal grains; and using a top stack seat to push a die attach film facing the attachment to be selected One is corresponding to the selected range or a block corresponding to the selected range and at least part of the partition, and the die in the selected range is pressed against and attached to an attachment surface of the die attach film. 如申請專利範圍第16項所述之多晶粒選取方法,其中該待選取附著件為一待選取膠膜、一能產生靜電吸附力之板體及一能產生真空吸附力之板體三者其中之一;當該待選取附著件為該待選取膠膜時,該待選取膠膜具有一黏著面,該黏著面黏附有該複數晶粒,該待選取膠膜為一熱解離膠膜、一光解離膠膜及一可溫控解離膠膜三者其中之一,在該選取範圍內之晶粒被壓抵於該附著面之前,所述多晶粒選取方法更包含有一解離步驟,該解離步驟為對該熱解離膠膜加熱、對該光解離膠膜照射光線及對該可溫控解離膠膜控制溫度三者其中之一而使該待選取膠膜之黏著面的黏著力下降。The method for selecting multiple crystal grains as described in item 16 of the scope of patent application, wherein the attachment to be selected is a plastic film to be selected, a plate body capable of generating electrostatic adsorption force, and a plate body capable of generating vacuum adsorption force One of them; when the attachment to be selected is the adhesive film to be selected, the adhesive film to be selected has an adhesive surface, the adhesive surface is adhered to the plural crystal grains, the adhesive film to be selected is a thermally dissociated adhesive film, One of a photodissociation film and a temperature-controllable dissociation film. Before the crystal grains in the selected range are pressed against the attachment surface, the method for selecting multiple crystal grains further includes a dissociation step. The dissociation step is to heat the thermally dissociated adhesive film, irradiate the photodissociated adhesive film with light, and control the temperature of the temperature-controllable dissociated adhesive film to reduce the adhesive force of the adhesive surface of the adhesive film to be selected. 如申請專利範圍第16項所述之多晶粒選取方法,其中對附著有該複數晶粒之待選取附著件定義該選取範圍的步驟中,係先定義一總選取範圍,再於該總選取範圍內劃分出複數該選取範圍,在劃分出該等選取範圍之後,係先挑除該等選取範圍之周圍的晶粒,再分別針對該等選取範圍進行使該頂推座頂推該置晶膠膜之步驟。For example, in the method for selecting multiple crystal grains as described in item 16 of the patent application, in the step of defining the selection range for the attachments to be selected with the plurality of crystal grains attached, a total selection range is first defined, and then the total selection A plurality of the selection ranges are divided within the range. After the selection ranges are divided, the surrounding crystal grains of the selection ranges are first selected, and then the ejection seat pushes the placed crystals respectively for the selection ranges. The steps of the film. 如申請專利範圍第16項所述之多晶粒選取方法,其中該頂推座係以其一頂推面頂推該置晶膠膜,該頂推面之形狀及面積係實質上符合該選取範圍之形狀及面積,或者該頂推面係大於該選取範圍且不超出該分隔道。For example, the multi-die selection method described in item 16 of the scope of the patent application, wherein the ejector seat pushes the die-placement film with its ejector surface, and the shape and area of the ejector surface substantially conform to the selection The shape and area of the range, or the pushing surface is larger than the selected range and does not exceed the partition. 如申請專利範圍第16項所述之多晶粒選取方法,其中該分隔道各區段之寬度係大於至少一該晶粒之平行於所述寬度之寬度。The method for selecting multiple crystal grains as described in claim 16, wherein the width of each section of the partition is greater than the width of at least one crystal grain parallel to the width. 如申請專利範圍第16項所述之多晶粒選取方法,其中在利用該頂推座頂推該置晶膠膜之步驟之前,先使一第一置晶裝置與一第二置晶裝置之相對位置處於一轉貼位置,該待選取附著件係設置於該第一置晶裝置且具有一附著有該複數晶粒之附著面,該第二置晶裝置包含有一基座,該頂推座係能移動地設置於該基座內,該置晶膠膜係設置於該基座上,該置晶膠膜具有一與該附著面朝向相反方向且面向該基座之安裝面,該頂推座具有一面向該置晶膠膜之安裝面的頂推面,該頂推面之面積係大於或等於該選取範圍之面積;當該第一置晶裝置與該第二置晶裝置之相對位置處於該轉貼位置時,該待選取附著件之附著面與該第二置晶裝置之附著面係相隔一預定距離地相面對;然後,該頂推座係相對於該基座朝該置晶膠膜之方向移動而以其頂推面頂推該置晶膠膜,其中該頂推座具有複數貫穿其頂推面之真空吸孔,在該頂推座以其頂推面頂推該置晶膠膜之後,使一真空源透過該等真空吸孔而於該頂推座之頂推面產生真空吸力而吸附該置晶膠膜。For the multi-die selection method described in item 16 of the scope of patent application, before the step of using the ejector seat to push the die-placement adhesive film, the first die placement device and the second die placement device The relative position is in a reposting position, the attachment to be selected is arranged on the first crystal placement device and has an attachment surface to which the plurality of die is attached, the second crystal placement device includes a base, and the push seat is It is movably disposed in the base, and the die attach film is disposed on the base, the die attach film has a mounting surface facing the opposite direction to the attachment surface and facing the base, the push seat There is an ejection surface facing the mounting surface of the die attach film, the area of the ejection surface is greater than or equal to the area of the selected range; when the relative position of the first die placement device and the second die placement device is In the reposting position, the attachment surface of the attachment to be selected and the attachment surface of the second crystal placement device face each other at a predetermined distance; then, the pushing seat faces the crystal placement glue relative to the base The direction of the film moves to push the wafer placement film with its pushing surface, wherein the pushing seat has a plurality of vacuum suction holes penetrating the pushing surface, and the pushing seat pushes the wafer with its pushing surface After the glue film is applied, a vacuum source is made to pass through the vacuum suction holes to generate a vacuum suction force on the pushing surface of the pushing seat to adsorb the crystal glue film. 如申請專利範圍第16項所述之多晶粒選取方法,其中挑除該選取範圍之周圍的晶粒之步驟係一次挑除一該晶粒。The method for selecting multiple crystal grains as described in item 16 of the patent application, wherein the step of removing the surrounding crystal grains of the selected range is to remove the crystal grains one at a time.
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TW200617369A (en) * 2004-11-16 2006-06-01 Leica Microsystems Method to inspect a wafer
TW201511161A (en) * 2013-06-07 2015-03-16 Asti Holdings Ltd Systems and methods for automatically verifying correct die removal from film frames
TW201738951A (en) * 2012-11-07 2017-11-01 半導體組件工業公司 Semiconductor die singulation method and apparatus

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Publication number Priority date Publication date Assignee Title
TW200617369A (en) * 2004-11-16 2006-06-01 Leica Microsystems Method to inspect a wafer
TW201738951A (en) * 2012-11-07 2017-11-01 半導體組件工業公司 Semiconductor die singulation method and apparatus
TW201511161A (en) * 2013-06-07 2015-03-16 Asti Holdings Ltd Systems and methods for automatically verifying correct die removal from film frames

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