TWI689565B - Method for manufacturing semiconductor wafer - Google Patents

Abstract

An object of the present invention is to provide a method for manufacturing a semiconductor wafer, which is a method of manufacturing a semiconductor wafer by cutting a wafer with a dicing tape reinforced, and even when an aqueous organic solvent is used There will be a positional deviation, etc., and there will be no residue adhesion on the obtained semiconductor wafer.

The present invention is a method for manufacturing a semiconductor wafer, which has the following steps: a dicing tape attaching step, which consists of an adhesive layer and a substrate film containing at least a hardening adhesive component that is cross-linked and hardened by stimulation The formed dicing tape is attached to the wafer from the side of the adhesive layer for reinforcement; the adhesive layer hardening step is to stimulate the above adhesive layer to crosslink and harden the hardening adhesive component; the cutting step, It cuts the wafer reinforced by the dicing tape to obtain a semiconductor wafer; and a semiconductor wafer peeling step, which peels the semiconductor wafer from the dicing tape.

Description

Method for manufacturing semiconductor wafer

The present invention relates to a method of manufacturing a semiconductor wafer, which is a method of manufacturing a semiconductor wafer by cutting a wafer with a dicing tape reinforced in a state where even when an aqueous organic solvent is used It does not shift, etc., and does not cause residue adhesion on the obtained semiconductor wafer.

Semiconductor wafers are usually manufactured by slicing rod-shaped semiconductor single crystals of higher purity into wafers, and then using photoresist to form specific circuit patterns on the wafer surface, and then, by grinding After the machine grinds the back of the wafer, it is finally cut into wafers.

Since it is known, the following method is used during dicing: attach the dicing tape to the back side of the wafer, cut the wafer in the longitudinal and lateral directions in a state where it has been fixed, and separate into single semiconductor chips, which After that, the obtained semiconductor wafer is picked up by a method such as pushing up from the side of the dicing tape by using a needle and fixed on the wafer holder. For example, Patent Document 1 discloses a polishing processing device using a plurality of grinding stone shafts, which simultaneously performs processing for grinding a wafer to a thin thickness using at least one grinding stone shaft from the back side of the wafer, and uses other At least one grindstone shaft cuts and separates the wafer into rectangular shaped wafers, but even in this method, in order to prevent the position of the wafer from shifting, dicing tape is also used.

In order to prevent the deviation of the position of the wafer during cutting, etc., the fixed wafer Cutting tape requires higher adhesion. In addition, in order to remove cutting debris during dicing, an aqueous organic solvent such as an isopropyl alcohol aqueous solution may be sprayed on the surface of the wafer. Therefore, the cutting tape also requires chemical resistance to aqueous organic solvents. However, if the adhesive force of the dicing tape is improved and the chemical resistance is imparted, there is a problem that when the semiconductor wafer obtained is peeled off from the dicing tape, the residue from the dicing tape may adhere to the surface of the semiconductor wafer . The problem of such residue adhesion has the following tendency: after attaching the dicing tape to the wafer, the longer the time, the more obvious.

[Prior Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Patent Laid-Open No. 7-78793

In view of the above-mentioned current situation, the object of the present invention is to provide a method for manufacturing a semiconductor wafer, which is a method for manufacturing a semiconductor wafer by cutting a wafer with a dicing tape reinforced, even when an aqueous organic solvent is used There is no positional deviation or the like, and no residue adheres to the obtained semiconductor wafer.

The present invention is a method for manufacturing a semiconductor wafer, which has the following steps: a dicing tape attaching step, which consists of an adhesive layer and a substrate film containing at least a hardening adhesive component that is cross-linked and hardened by stimulation The formed dicing tape is attached to the wafer from the side of the adhesive layer for reinforcement; the adhesive layer hardening step is to stimulate the above adhesive layer to crosslink and harden the hardening adhesive component; the cutting step, It is to add the above by cutting tape Cutting the reinforced wafer to obtain a semiconductor wafer; and a semiconductor wafer peeling step, which peels the semiconductor wafer from the dicing tape.

Hereinafter, the present invention will be described in detail.

The present inventors conducted intensive research and found that: by using a dicing tape composed of an adhesive layer containing a hardening adhesive component that is cross-linked and hardened by stimulation and a base film, it is unhardened It is attached to the wafer in the state of the state. On the other hand, after the dicing tape is attached and before the dicing step, it is stimulated to crosslink and harden, so that even when an aqueous organic solvent is used, it will not be misaligned. The invention is completed without transferring residues to the wafer on the obtained semiconductor wafer.

Since the adhesive layer containing the hardening adhesive component that is cross-linked and hardened by stimulation has sufficient flexibility before the cross-linking and hardening of the hardening adhesive component, the cutting tape used therefor is even on the surface Wafers with irregularities (for example, irregularities with a height of 20 μm or more; protruding electrodes, etc.) can also exhibit high adhesiveness that can reliably follow the irregularities and adhere to the wafer to protect it. Also, in this way, the cross-linking and hardening of the adhesive layer will not cause positional deviation even when an aqueous organic solvent is used in the cutting step. Furthermore, the cross-linking and hardening of the adhesive layer does not cause subsequent adhesion or the like, and no adhesion of residues occurs, so that the semiconductor wafer can be peeled from the dicing tape.

In addition, in the manufacturing method of a semiconductor wafer, there is a case where a wafer processing step in which a wafer reinforced with a dicing tape is subjected to a heating process is performed before the dicing step. In such a wafer processing step, there are cases where the adhesive layer of the dicing tape shrinks due to heat to cause warpage of the wafer, or the subsequent increase causes the adhesion of the residue to the surface of the semiconductor wafer to become apparent. Regarding the manufacturing method of the semiconductor wafer of the present invention, even after such wafer processing In the case of the step, by crosslinking and curing the hardening adhesive component before the wafer processing step, the generation of warpage or the adhesion of the residue to the surface of the semiconductor wafer can also be prevented.

In the method for manufacturing a semiconductor wafer of the present invention, a dicing tape attaching step is first performed, which is a dicing consisting of an adhesive layer and a substrate film containing at least a hardening adhesive component cross-linked and hardened by stimulation The adhesive tape is attached to the wafer from the side of the adhesive layer for reinforcement.

The above-mentioned wafers are used as raw materials for semiconductor wafers and are not particularly limited, and those known in the art can be used. In addition, in this specification, the wafer also includes wafer-level packaging, that is, a wafer processed in a wafer state until the final step of packaging is completed.

Among them, the present invention is particularly effective for wafers having irregularities on the surface of 20 μm or more.

The above-mentioned dicing tape has at least an adhesive layer and a base film.

The adhesive layer contains a hardening adhesive component that is cross-linked and hardened by stimulation. By using an adhesive layer containing such a hardening adhesive component, the dicing tape can be attached to the wafer with a high adhesive force, and even when an aqueous organic solvent is used, no position can be simultaneously achieved High adhesion such as offset, and high non-residue adhesion that can peel the semiconductor wafer from the dicing tape without residue.

Examples of the stimulus for crosslinking and curing the hardening adhesive component include light, heat, electromagnetic waves, electron beams, and ultrasonic waves. Among them, a photo-curable adhesive component that is cross-linked and cured by ultraviolet irradiation is preferred.

Examples of the photocurable adhesive component include a photocurable adhesive containing a polymerizable polymer as a main component and containing a photopolymerization initiator.

The above polymerizable polymer can be obtained, for example, by synthesizing the component in advance A (meth)acrylic polymer having a functional group in the child (hereinafter, referred to as a (meth)acrylic polymer containing a functional group), and having a functional group which reacts with the above functional group in the molecule and Radical polymerizable unsaturated bond compounds (hereinafter referred to as functional group-containing unsaturated compounds) react.

The above-mentioned (meth)acrylic polymer containing a functional group is a polymer having adhesiveness at room temperature, and is obtained by the following method in the same way as in the case of ordinary (meth)acrylic polymer: The number of alkyl acrylates and/or alkyl methacrylates is usually in the range of 2 to 18 as the main monomer, and it should be combined with the monomers containing functional groups, and other copolymers that can be copolymerized with these as needed. The qualitative monomer is copolymerized by conventional methods. The weight average molecular weight of the functional group-containing (meth)acrylic polymer is usually about 200,000 to 2 million.

Examples of the functional group-containing monomer include carboxyl-containing monomers such as acrylic acid and methacrylic acid; hydroxyl-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate; glycidyl acrylate and methacrylic acid Epoxy group-containing monomers such as glyceride; isocyanate group-containing monomers such as isocyanate ethyl acrylate and isocyanate ethyl methacrylate; amino group-containing monomers such as amino ethyl acrylate and amino ethyl methacrylate, etc. .

Examples of the other copolymerizable monomers for modification include various monomers used in ordinary (meth)acrylic polymers such as vinyl acetate, acrylonitrile, and styrene.

As the functional group-containing unsaturated compound that reacts with the functional group-containing (meth)acrylic polymer, the functional group-containing (meth)acrylic polymer can be used in accordance with the functional group of the functional group-containing (meth)acrylic polymer. Those with the same monomer. For example, when the functional group of the (meth)acrylic polymer containing a functional group is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer can be used. acrylic acid When the functional group of the polymer is a hydroxyl group, an isocyanate group-containing monomer can be used, and when the functional group of the (meth)acrylic polymer containing a functional group is an epoxy group, a carboxyl group-containing monomer can be used When the functional group of the (meth)acrylic polymer containing a functional group is an amine group, an epoxy group-containing monomer can be used.

The preferable lower limit of the radical polymerizable unsaturated bond content of the polymerizable polymer is 0.01 meq/g, and the preferable upper limit is 2.0 meq/g. If the content of the radically polymerizable unsaturated bond of the polymerizable polymer is within this range, the adhesive layer is stimulated during the adhesive layer hardening step to crosslink and harden the hardening adhesive component. Even if an aqueous organic solvent is used in the dicing step, the adhesive layer does not cause positional deviation, etc., and can fully protect the wafer. The more preferable lower limit of the radical polymerizable unsaturated bond content of the above polymerizable polymer is 0.05 meq/g, and the more preferable upper limit is 1.5 meq/g.

、十二烷基9-氧硫

、二甲基9-氧硫

、二乙基9-氧硫

、α-羥基環己基苯基酮、2-羥基甲基苯基丙烷等光自由基聚合起始劑。該等光聚合起始劑可單獨使用，亦可將2種以上併用。 In the case where the above-mentioned hardening adhesive component is a photo-curing adhesive component, the photopolymerization initiator to be formulated may, for example, be activated by irradiating light with a wavelength of 250 to 800 nm as such a photopolymerization initiator , For example, acetophenone derivative compounds such as methoxyacetophenone, benzoin ether compounds such as benzoin propyl ether, benzoin isobutyl ether, or benzoyl dimethyl ketal, acetophenone diethyl A ketal derivative compound such as a ketal, or a phosphine oxide derivative compound, or a bis(η 5-cyclopentadienyl) titanocene derivative compound, benzophenone, Michler's ketone, chlorine 9-oxo

、Dodecyl 9-oxysulfur

Dimethyl 9-oxysulfur

, Diethyl 9-oxysulfur

, Α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane and other photo-radical polymerization initiators. These photopolymerization initiators may be used alone or in combination of two or more.

The hardening-type adhesive component preferably further contains a radically polymerizable polyfunctional oligomer or monomer. By containing radically polymerizable multifunctional oligomers or monomers, the Increased sclerosis when given stimulation.

The above-mentioned multifunctional oligomer or monomer is preferably one having a molecular weight of 10,000 or less. In order to efficiently perform the three-dimensional network of the hardened component by heating or light irradiation, it is more preferable that the molecular weight is 5000 or less and the molecule The number of free radical polymerizable unsaturated bonds within is 2~20.

Examples of the polyfunctional oligomers or monomers include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, neopentyl alcohol triacrylate, neopentyl alcohol tetraacrylate, and di neopentyl alcohol. Tetraol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, or the same methacrylates as described above. Furthermore, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polypropylene glycol #700 diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylic Ester, the same methacrylates as described above, etc. These polyfunctional oligomers or monomers can be used alone or in combination of two or more.

The adhesive layer may further contain a gas generating agent that generates gas by stimulation. In the case where the adhesive layer contains the gas generating agent, by stimulating the adhesive layer in the semiconductor wafer peeling step to generate gas from the gas generating agent, it is easier to crystallize without leaving a paste The circle will peel off the cutting tape.

Here, for the curable adhesive component and the gas generating agent, a combination of qualitatively and quantitatively different stimuli for crosslinking and curing the curable adhesive component and stimulating the gas generated by the gas generating agent is selected. By selecting this combination, the gas generating agent can generate gas by the stimulation in the adhesive layer hardening step, thereby preventing the wafer and the dicing tape from peeling off.

Specifically, for example, in the case of using the photocurable adhesive component, a gas generating agent that generates gas by stimulus other than light such as heat is selected. In addition, when the stimulus of the gas generated by the gas generating agent is also light, the wavelength and the light-curing adhesive are also selected The agent components are cross-linked and the light to be cured is different, or a gas generating agent that requires a larger amount of light than the amount of light to cross-link and cure the photo-curable adhesive component even if the wavelengths overlap.

For example, when using a polymer containing an unsaturated double bond such as a vinyl group in a side chain and a photopolymerization initiator activated at a wavelength of 250 to 800 nm as the above-mentioned crosslinking and hardening by light irradiation In the case of a photo-curable adhesive component, it can be cross-linked and hardened by irradiating light with a wavelength of 365 nm or more. If this kind of photo-curable adhesive component is combined with a gas generating agent that generates gas by irradiating light with a wavelength of 300 nm or less, light of a wavelength of 365 nm or more can be irradiated in the adhesive layer hardening step, and in the semiconductor wafer peeling step It can be irradiated with light of wavelength below 300nm.

The gas generating agent is not particularly limited, and for example, conventionally known gas generating agents such as azo compounds and azide compounds can be used.

In addition, in terms of having particularly excellent heat resistance, a carboxylic acid compound represented by the following general formula (1) or a salt thereof is also preferable. Such a gas generating agent generates gas (carbon dioxide gas) by irradiating light such as ultraviolet rays, and on the other hand, has high heat resistance that does not decompose even if heat is generated during the cutting step.

In formula (1), R ¹ to R ⁷ each represent hydrogen or an organic group. R ¹ ~R ⁷ may be the same or different. Two of R ¹ ~R ⁷ can also be bonded to each other to form a ring structure.

基等雜環基等。 Examples of the organic group in the general formula (1) include alkyl groups such as methyl, ethyl, propyl, butyl, and isobutyl, alkoxy groups such as methoxy and ethoxy groups, or carboxyl groups, or Aromatic groups such as hydroxy, nitro, or phenyl, polycyclic hydrocarbon groups such as naphthyl, stilbene, pyrenyl, or collective cyclic hydrocarbon groups such as biphenyl, or

Heterocyclic groups and so on.

Among them, it is preferable that one of R ³ to R ⁷ in the above formula (1) is an organic group represented by the following formula (2), or a phase in R ³ to R ⁷ in the above formula (1) The adjacent two are bonded to each other to form a ring structure represented by the following formula (3).

In formula (2), R ⁸ to R ¹² each represent hydrogen or an organic group. R ⁸ ~R ¹² may be the same or different. Two of R ⁸ ~R ¹² can also be bonded to each other to form a ring structure.

In formula (3), R ¹³ to R ¹⁶ each represent hydrogen or an organic group. R ¹³ ~R ¹⁶ may be the same or different. Two of R ¹³ ~R ¹⁶ can also be bonded to each other to form a ring structure.

In addition, R ¹ in the above formula (1) is preferably a methyl group.

-9-羧酸等。 Specific examples of the carboxylic acid compound represented by the above formula (1) include, for example, phenylacetic acid, diphenylacetic acid, triphenylacetic acid, 2-phenylpropionic acid, and 2,2-diphenylpropionic acid , 2,2,2-triphenylpropionic acid, 2-phenylbutyric acid, α-methoxyphenylacetic acid, mandelic acid, 2-phenyllactic acid, diphenylglycolic acid, belladonna alcoholic acid, phenylpropanoic acid Diacid, phenylsuccinic acid, 3-methyl-2-phenylbutyric acid, o-toluoyl acetic acid, m-tolyl acetic acid, 4-isobutyl-α-methylphenyl acetic acid, p-toluene Methylacetic acid, 1,2-phenylene diacetic acid, 1,3-phenylene diacetic acid, 1,4-phenylene diacetic acid, 2-methoxyphenylacetic acid, 2-hydroxyphenylacetic acid, 2- Nitrophenylacetic acid, 3-nitrophenylacetic acid, 4-nitrophenylacetic acid, 2-(4-nitrophenyl)propionic acid, 3-(4-nitrophenyl)propionic acid, 4- (4-nitrophenyl) propionic acid, 3,4-dimethoxyphenylacetic acid, 3,4-(methylenedioxy)phenylacetic acid, 2,5-dimethoxyphenylacetic acid , 3,5-dimethoxyphenylacetic acid, 3,4,5-trimethoxyphenylacetic acid, 2,4-dinitrophenylacetic acid, 4-biphenylacetic acid, 1-naphthylacetic acid, 2-naphthylacetic acid, 6-methoxy-α-methyl-2-naphthylacetic acid, 1-pyreneacetic acid, 9-stilbene carboxylic acid or 9H-

-9-carboxylic acid, etc.

酮乙酸。 Among them, the carboxylic acid compound represented by the above formula (1) is preferably ketoprofen represented by the following formula (1-1) or 2- represented by the following formula (1-2)

Ketoacetic acid.

Since the salt of the carboxylic acid compound represented by the above formula (1) also has a skeleton derived from the carboxylic acid compound represented by the above formula (1), if it is irradiated with light, it can easily cause decarbonation to generate carbon dioxide gas.

The salt of the carboxylic acid compound represented by the above formula (1) can be simply prepared by mixing the carboxylic acid compound represented by the above formula (1) with a basic compound in a container without going through a complicated synthetic route .

The basic compound is not particularly limited, and examples thereof include amines, hydrazine compounds, quaternary ammonium hydroxide salts, and phosphine compounds.

The amine is not particularly limited, and any one of primary amine, secondary amine, and tertiary amine can be used.

Among them, the basic compound is preferably a monoalkylamine or a dialkylamine. When a monoalkylamine or dialkylamine is used, the polarity of the salt of the carboxylic acid compound represented by the above-mentioned formula (1) can be reduced to increase the solubility with the adhesive component. More preferably, it is a monoalkylamine or dialkylamine having 6 to 12 carbon atoms.

In addition, the gas generating agent is also preferably the following general formula (4), general formula (5) or The tetrazole compound represented by the general formula (6) or a salt thereof. These gas generating agents also generate gas (nitrogen) by irradiating light such as ultraviolet rays, and on the other hand, have high heat resistance that does not decompose even if heat is generated during the cutting step.

In formulas (4) to (6), R ²¹ and R ²² represent hydrogen, an alkyl group having 1 to 7 carbon atoms, an alkylene group, a phenyl group, a mercapto group, a hydroxyl group, or an amine group.

The salts of the tetrazole compounds represented by the general formulas (4) to (6) also have a skeleton derived from the tetrazole compounds represented by the general formulas (4) to (6), so if they are exposed to light, Nitrogen gas is produced.

The salt of the tetrazole compound represented by the above general formulas (4) to (6) is not particularly limited, for example Examples include sodium salt, potassium salt, and ammonium salt.

The salt of the tetrazole compound represented by the above general formulas (4) to (6) can be prepared by mixing the tetrazole compound represented by the above general formulas (4) to (6) with a basic compound in a container. It can be easily prepared without going through complicated synthetic routes.

The basic compound is not particularly limited, and examples thereof include amines, hydrazine compounds, quaternary ammonium hydroxide salts, and phosphine compounds.

The amine is not particularly limited, and any one of primary amine, secondary amine, and tertiary amine can be used.

Among them, the basic compound is preferably a monoalkylamine or a dialkylamine. In the case of using monoalkylamine or dialkylamine, the polarity of the salt of the tetrazole compound represented by the above general formulas (4) to (6) can be lowered, which can improve the light curing type Solubility of adhesive components. More preferably, it is a monoalkylamine or dialkylamine having 6 to 12 carbon atoms.

The tetrazole compound represented by the general formula (4) or a salt thereof is not particularly limited, and specific examples include 1H-tetrazole, 5-phenyl-1H-tetrazole, and 5,5-azobis -1H-tetrazole, 5-amino-1H-tetrazole, 5-methyl-1H-tetrazole, 1-methyl-5-mercapto-1H-tetrazole, 1-methyl-5-ethyl- 1H-tetrazole, 1-(dimethylaminoethyl)-5-mercapto-1H-tetrazole, etc.

The tetrazole compound represented by the general formula (5) or a salt thereof is not particularly limited, and specific examples thereof include 5,5′-bistetrazole diammonium salt and the like.

The tetrazole compound represented by the general formula (6) or a salt thereof is not particularly limited, and specific examples thereof include 5,5′-bistetrazolamine monoammonium salt.

Regarding the content of the gas generating agent, the preferred lower limit with respect to 100 parts by weight of the hardening adhesive component is 5 parts by weight, and the preferred upper limit is 50 parts by weight. If the above gas If the content of the raw material is less than 5 parts by weight, there may be cases where the production of stimulating carbon dioxide gas or nitrogen decreases and sufficient peeling cannot be performed. If it exceeds 50 parts by weight, there may be components that cannot be completely dissolved in the hardening adhesive. And the adhesion is reduced. The more preferable lower limit of the content of the gas generating agent is 10 parts by weight, and the more preferable upper limit is 30 parts by weight.

The adhesive layer may further contain a photosensitizer.

Since the photosensitizer has the effect of amplifying the stimulation of the gas generating agent by light, the gas can be released by the irradiation of less light. In addition, the gas can be released by light in a wider wavelength region.

The photosensitizer is not particularly limited as long as it is excellent in heat resistance.

Examples of the photosensitizer excellent in heat resistance include polycyclic aromatic compounds having at least one alkoxy group. Among them, a substituted alkoxy polycyclic aromatic compound having an alkoxy group partially substituted with a glycidyl group or a hydroxyl group is preferred. These photosensitizers have high sublimation resistance and can be used at high temperatures. In addition, by partially replacing the alkoxy group with a glycidyl group or a hydroxyl group, the solubility in the above-mentioned light-curable adhesive component is increased, thereby preventing bleeding.

Regarding the content of the photosensitizer, the preferred lower limit with respect to 100 parts by weight of the hardening adhesive component is 0.05 parts by weight, and the preferred upper limit is 10 parts by weight. If the content of the photosensitizer is less than 0.05 parts by weight, a sufficient sensitizing effect may not be obtained, and if it exceeds 10 parts by weight, the residue derived from the photosensitizer may increase and sufficient peeling may become impossible. . The more preferable lower limit of the content of the photosensitizer is 0.1 part by weight, and the more preferable upper limit is 5 parts by weight.

The above adhesive layer may contain smoked silica. By blending smoked silica, the cohesive force of the above adhesive layer increases. Therefore, even if additives with different polarities are mixed in the (meth)acrylic polymer containing functional groups, the adhesive layer will be uniform.

The lower limit of the average particle size of the smoked silica is 0.05 μm, and the upper limit is 3 μm. When the average particle size of the above-mentioned smoked silica is within this range, it can be used for higher heat resistance that does not generate bumps during the metal evaporation step, and does not leave a paste in the peeling step. The high paste has no residue. The preferable lower limit of the average particle size of the above smoked silica is 0.06 μm, the preferred upper limit is 2 μm, the more preferred lower limit is 0.07 μm, and the more preferred upper limit is 1 μm.

In addition, in this specification, the average particle size of smoked silica means using any method of laser scattering-diffraction method or dynamic light scattering method to disperse in methyl ethyl ketone, methyl The measured particle size of smoked silica in medium such as ethyl ketone/toluene (60:40) solution.

In the case of blending the above-mentioned smoked silica, the blending amount is preferably 40 parts by weight or less relative to 100 parts by weight of the hardening adhesive component. With a blending amount of 40 parts by weight or less, it can exert the effect of improving cohesion to make the adhesive layer uniform, or the effect of improving the non-residuality of the paste. The lower limit of the amount of the smoked silica is not particularly limited. In order to fully exert the effect of improving the uniformity of the adhesive and the non-residue of the paste, it is preferably 3 parts by weight or more.

The adhesive layer may contain a polysiloxane compound having a functional group that can crosslink with the hardening adhesive component (hereinafter, also simply referred to as "polysiloxane compound A").

Polysiloxane has excellent heat resistance, so even if heat is generated during the cutting step, it will prevent the adhesive from scorching, etc., and will ooze to the interface of the adherend during peeling, which makes peeling easy. Since the polysilicone compound has a functional group that can cross-link with the above-mentioned hardening-type adhesive component, it is incorporated into the hardening-type adhesive component by stimulating a chemical reaction with the above-mentioned hardening-type adhesive component, and thus the polysilicone compound Does not attach to the adherend and cause pollution.

The polysiloxane framework of the above polysiloxane compound A is not particularly limited, and may be D Either body or DT body. The above-mentioned polysiloxane compound A preferably has the functional group on the side chain or end of the polysiloxane skeleton. Among them, it is more preferable to use a polysilicone compound having a polysilicone skeleton having a D body and having a functional group capable of crosslinking with the above-mentioned hardening adhesive component at the end, because it is easy to achieve high initial adhesion at the same time And the peelability during peeling.

The functional group of the above-mentioned polysiloxane compound A is selected and used according to the above-mentioned hardening adhesive component. For example, in the case of a hardening type adhesive composition with a radical polymerizable unsaturated bond (meth)acrylate-based polymerizable polymer having the radical bond in the molecule as the main component, a hardening type adhesive is selected. Functional group that can be cross-linked with (meth)acryloyl group.

The functional group that can be cross-linked with (meth)acryloyl group is a functional group having an unsaturated double bond, and specific examples include vinyl, (meth)acryloyl, allyl, and cis Ethylenediimide and so on.

The functional group equivalent of the polysiloxane compound A is not particularly limited, and the lower limit is preferably 1, and the upper limit is preferably 20. If the equivalent of the above functional group is less than 1, there may be a case where the polysiloxane compound A cannot be fully incorporated into the photo-curable adhesive component when the obtained adhesive layer is hardened to contaminate the adherend or cannot Fully exert the peelability, and if it exceeds 20, there may be cases where sufficient adhesive force cannot be obtained. The more preferable upper limit of the functional group equivalent is 10, the more preferable lower limit is 2, and the more preferable upper limit is 6.

The molecular weight of the polysiloxane compound A is not particularly limited, and the lower limit is preferably 300, and the upper limit is preferably 50,000. If the molecular weight is less than 300, the chemical resistance and heat resistance of the adhesive layer may become insufficient, and if it exceeds 50,000, it may be difficult to mix with the hardening adhesive component. The more preferable lower limit of the above molecular weight is 400, the more preferable upper limit is 10000, the more preferable lower limit is 500, and the more preferable upper limit is 5000.

The method for synthesizing the above-mentioned polysilicone compound A is not particularly limited, and for example, the following methods may be mentioned: by using a hydrosilation reaction, a polysilicone resin having a SiH group and a function capable of cross-linking with the above-mentioned hardening adhesive component The vinyl-based compound reacts to introduce the functional group that can be cross-linked with the hardening adhesive component into the polysiloxane resin; or to make the silicone compound and the functional group that can cross-link with the hardening adhesive component. The base siloxane compound undergoes a condensation reaction.

Examples of the commercially available polysiloxy compound A include: X-22-164, X-22-164AS, X-22-164A, X-22-164B, X-22-164C, manufactured by Shin-Etsu Chemical Co., Ltd. Polysiloxanes such as X-22-164E with methacryl acetyl groups at both ends, or X-22-174DX, X-22-2426, X-22-2475 manufactured by Shin-Etsu Chemical Co., Ltd. have methyl groups at one end Acrylic-based polysilicone, or ECECRYL350, EBECRYL1360, etc. made of Daicel-Cytec, etc. Acrylic-based polysilicone, or AC-SQ TA-100, AC-SQ SI-20, etc. Polysilicone compound with acryl acetyl group, or polysilicone compound with methacryl acetyl group such as MAC-SQ TM-100, MAC-SQ SI-20, MAC-SQ HDM manufactured by East Asia Synthetic Corporation, etc.

Among them, the above-mentioned polysiloxane compound A is particularly high in chemical resistance, heat resistance and high polarity, so it easily bleeds out from the adhesive layer, so the following general formula (I), general formula (II), and The polysiloxane compound represented by formula (III) has a (meth)acryloyl group in the siloxane skeleton.

In the formula, X and Y represent integers from 0 to 1200 (excluding the case where X and Y are both 0), and R represents a functional group having an unsaturated double bond.

Among the polysiloxane compounds represented by the general formula (I), general formula (II), and general formula (III) having a (meth)acryloyl group in the siloxane skeleton, the commercially available examples include Daicel-Cytec Corporation. The manufactured EBECRYL350, EBECRYL1360 (R are all acrylic) and so on.

In addition, as the above-mentioned polysiloxane compound, a polysiloxane compound having a three-dimensional structure represented by the following general formula (IV) can also be used.

Regarding the content of the above-mentioned polysiloxane compound A, a preferable lower limit with respect to 100 parts by weight of the hardening adhesive component is 0.5 parts by weight, and a preferable upper limit is 50 parts by weight. If the content of polysiloxane compound A is less than 0.5 parts by weight, there is a case where the adhesive force will not be sufficiently reduced even if it is stimulated, and it cannot be peeled off from the adherend. If it exceeds 50 parts by weight, it may become an adherend. The situation of the cause of pollution. The lower limit of the content of the polysiloxane compound A is preferably 1 part by weight, and the upper limit is more preferably 40 parts by weight.

In order to adjust the cohesive force, the above-mentioned adhesive layer may contain various polyfunctional compounds, such as isocyanate compounds, melamine compounds, epoxy compounds, etc., which are formulated in ordinary adhesives, as needed.

The adhesive layer may also contain well-known additives such as plasticizers, resins, surfactants, waxes, and particulate fillers.

The above-mentioned adhesive layer is preferably a 25°C storage shear modulus of elasticity measured under a shear mode of dynamic viscoelasticity measurement and a continuous temperature increase from -50°C to 300°C before the cutting tape attaching step is 1.0×10 ² ~2.0×10 ⁵ Pa. The storage shear modulus of the adhesive layer before cross-linking and hardening is within this range. Even if it is a wafer with unevenness of 20 μm or more on the surface, it can play a more reliable role to follow the unevenness. High irregularity followability, so that the wafer can be reliably protected. The lower limit of the storage shear elastic modulus at 25° C. before the step of attaching the cutting tape of the adhesive layer is preferably 1.0×10 ³ Pa, and the more preferable upper limit is 1.0×10 ⁵ Pa.

The above adhesive layer is preferably a 25°C storage shear modulus of elasticity measured under the shear mode of dynamic viscoelasticity measurement after the adhesive layer hardening step and continuously heated from -50°C to 300°C. 2.0×10 ⁵ ~1.0×10 ⁹ Pa. By storing and shearing the elastic modulus of the adhesive layer after crosslinking and hardening within this range, even if an aqueous organic solvent is used in the dicing step, there will be no positional deviation, etc. to fully protect the wafer , And will not cause residue adhesion on the obtained semiconductor wafer. In addition, even after the hardening step of the adhesive layer and before the dicing step, there is a case where a wafer processing step with heat treatment is performed on the wafer reinforced by the dicing tape, the adhesive layer of the dicing tape can be prevented The shrinkage due to heating causes the wafer to warp, or the subsequent increase causes the residue to adhere to the surface of the semiconductor wafer. The lower limit of the storage shear elastic modulus at 25° C. after the adhesive layer hardening step of the above-mentioned adhesive layer is preferably 1.0×10 ⁶ Pa, and more preferably the upper limit is 5.0×10 ⁸ Pa.

The thickness of the adhesive layer is not particularly limited, and the lower limit is preferably 5 μm, and the upper limit is preferably 100 μm. If the thickness of the adhesive layer is within this range, it can be attached to the wafer with sufficient adhesive force to protect the wafer being processed. The preferred lower limit of the thickness of the adhesive layer is 10 μm, and the preferred upper limit is 50 μm.

In the case where the wafer is a wafer having irregularities with a height of 20 μm or more on the surface, it is also effective to set the thickness of the adhesive layer to be thinner than the irregularities of the wafer.

In order to protect the surface of the wafer, a passivation film made of resin such as polyimide may be formed on the surface of the wafer. If a dicing tape is attached to the surface of the wafer with unevenness, the convex portion bites into the adhesive layer and directly contacts the passivation film. If the wafer processing step with heat treatment is performed in this state, the adhesive layer will scorch on the passivation film, which may easily cause the paste to remain. By setting the thickness of the above-mentioned adhesive layer to be thinner than the height of the unevenness of the wafer, the adhesive layer can be prevented from directly contacting the passivation film during attachment, thereby further preventing the generation of paste residue.

When the thickness of the adhesive layer is set to be thinner than the height of the unevenness of the wafer, the preferred lower limit of the difference between the thickness of the adhesive layer and the height of the unevenness of the wafer is 10 μm, the preferred upper limit is 100 μm. If the above difference is less than 10 μm, there may be a portion where the adhesive layer and the passivation film are in direct contact with each other at the time of attachment, resulting in a paste residue. If the above difference exceeds 100 μm, there is a case where the adhesive force becomes insufficient to protect the wafer sufficiently. The more preferable lower limit of the above difference is 20 μm, and the more preferable upper limit is 80 μm.

The base film is not particularly limited, and examples include acrylic acid, olefin, polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), nylon, urethane, and polyacrylic acid. Films made of transparent resins such as amines, films with a net-like structure, films with holes, etc.

The thickness of the base film is not particularly limited, but the lower limit is preferably 10 μm, and the upper limit is preferably 200 μm. If the thickness of the base film is within this range, the wafer can be sufficiently reinforced, and the semiconductor wafer can be easily peeled in the semiconductor wafer peeling step.

In the method for manufacturing a semiconductor wafer of the present invention, an adhesive layer hardening step is performed, which is to stimulate the adhesive layer to crosslink and harden the hardening adhesive component. Thereby, even when an aqueous organic solvent is used in the dicing step, there is no positional deviation or the like, the wafer can be sufficiently protected, and residue adhesion on the obtained semiconductor wafer is not generated.

When using, for example, a photo-curable adhesive component containing a polymer having an unsaturated double bond in a side chain such as a vinyl group and a photopolymerization initiator activated at a wavelength of 250 to 800 nm as the above-mentioned curable adhesive component, The above-mentioned hardening adhesive component can be cross-linked and hardened by irradiating light with a wavelength of 365 nm or more. For such a photocurable adhesive component, for example, it is preferable to irradiate light with a wavelength of 365 nm with an illuminance of 5 mW or more, more preferably with an illuminance of 10 mW or more, and further preferably with an illuminance of 20 mW or more, particularly preferably To irradiate with an illuminance of 50mW or more. Also, it is preferable to irradiate the wavelength with a cumulative illuminance of 300 mJ or more The light of 365 nm is more preferably irradiated with a cumulative illuminance of 500 mJ or more and 10000 mJ or less, and further preferably irradiated with a cumulative illuminance of 500 mJ or more and 7500 mJ or less, and particularly preferably irradiated with a cumulative illuminance of 1000 mJ or more and 5000 mJ or less.

The method for manufacturing a semiconductor wafer of the present invention may also have a wafer processing step after the above-mentioned adhesive layer hardening step and before the dicing step of the next step, which is a treatment accompanied by heating the wafer reinforced by the dicing tape. The method for manufacturing a semiconductor wafer of the present invention can crosslink and harden the hardening adhesive component in the adhesive layer hardening step before the wafer processing step even when performing such a wafer processing step This prevents the warpage or residue caused by heat from adhering to the surface of the semiconductor wafer.

The above-mentioned wafer processing steps with heat treatment include, for example, polishing the wafer to a fixed thickness, or sputtering, evaporation, etching, chemical vapor deposition (CVD), physical vapor phase Deposition method (PVD), resist coating-patterning, reflow soldering, etc.

In the method for manufacturing a semiconductor wafer of the present invention, next, a dicing step is performed, which is to cut a wafer reinforced by a dicing tape to obtain a semiconductor wafer.

The method of cutting is not particularly limited, and a method of cutting and separating using conventionally known grindstones or the like can be used.

During cutting, in order to remove cutting debris, an aqueous organic solvent such as an isopropyl alcohol aqueous solution may be sprayed on the surface of the wafer. The adhesive layer that has been cross-linked and hardened in the adhesive hardening step can also exhibit sufficient chemical resistance to aqueous organic solvents.

In the method for manufacturing a semiconductor wafer of the present invention, a semiconductor wafer peeling step is subsequently performed, which peels the semiconductor wafer from the dicing tape.

The peeling method of the semiconductor wafer is not particularly limited, and a conventionally known method can be used. which is, The pin picking method of the semiconductor wafer obtained by pushing the needle from the side of the dicing tape can be used, or the pinless picking method without using a pin can be used.

Since the modulus of elasticity of the adhesive layer that has been cross-linked and hardened during the above-mentioned adhesive curing step increases, the semiconductor wafer can be easily peeled off without residue. In addition, even after a certain period of time after the dicing tape is attached to the wafer, the hyperactivity will hardly progress.

In the case where the adhesive layer contains the gas generating agent, the semiconductor wafer can be more easily peeled off by stimulating the generation of gas from the gas generating agent in the semiconductor wafer peeling step.

For example, when a gas generating agent that generates gas by irradiating light with a wavelength of 300 nm or less is used as the gas generating agent, it is easier to generate gas from the gas generating agent by irradiating light with a wavelength of 300 nm or less. Peel the semiconductor wafer from the dicing tape.

For such a gas generating agent, for example, it is preferable to irradiate light with a wavelength of 254 nm with an illuminance of 5 mW or more, more preferably with an illuminance of 10 mW or more, and further preferably with an illuminance of 20 mW or more, particularly preferably with 50 mW Irradiate with the above illuminance. Moreover, it is preferable to irradiate light with a wavelength of 254 nm with a cumulative illuminance of 1000 mJ or more, more preferably to illuminate with a cumulative illuminance of 1000 mJ or more and 20 J or less, and further preferably to irradiate with a cumulative illuminance of 1500 mJ or more and 15 J or less To irradiate with a cumulative illuminance of 2000mJ or more and 10J or less.

According to the present invention, it is possible to provide a method for manufacturing a semiconductor wafer, which is a method for manufacturing a semiconductor wafer by cutting a wafer with a dicing tape reinforced, and even when an aqueous organic solvent is used There is a positional deviation, etc., and no residue adheres to the obtained semiconductor wafer.

The following examples illustrate the present invention in further detail, but the invention is not limited to these examples.

(Example 1)

(1) Preparation of cutting tape

Prepare a reactor equipped with a thermometer, a stirrer, and a condenser, and add 94 parts by weight of 2-ethylhexyl acrylate as an alkyl (meth)acrylate and a monomer as a functional group-containing monomer into the reactor 6 parts by weight of hydroxyethyl acrylate, 0.01 parts by weight of lauryl mercaptan, and 80 parts by weight of ethyl acetate, after which, the reactor was heated to start reflux. Then, 0.01 parts by weight of 1,1-bis(tertiary hexyl peroxide)-3,3,5-trimethylcyclohexane as a polymerization initiator was added to the above reactor, and the polymerization was started under reflux. Subsequently, 1,1-bis(tertiary hexyl peroxide)-3,3,5-trimethylcyclohexane 0.01 parts by weight were added to each of 1 hour and 2 hours after the start of the polymerization, and further, since the start of the polymerization 4 After hours, 0.05 parts by weight of tertiary hexyl peroxypivalate was added to continue the polymerization reaction. Then, 8 hours after the start of the polymerization, an ethyl acetate solution of a functional group-containing (meth)acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 600,000 was obtained.

To 100 parts by weight of the resin solid content of the ethyl acetate solution containing the functional group-containing (meth)acrylic polymer, 2-isocyanate group ethyl methacrylic acid, which is a functional group-containing unsaturated compound, is added 3.5 parts by weight of the ester is reacted to obtain a photo-curable adhesive.

1 part by weight of a photopolymerization initiator (Esacure one, manufactured by Japan SiberHegner Co., Ltd.) is mixed with 100 parts by weight of the resin solid content of the ethyl acetate solution of the obtained photocurable adhesive, and it has a (meth)acryloyl group 2 parts by weight of polysiloxane (made by Daicel-Cytec, EBECRYL350 (acrylic equivalent 2)), 10 parts by weight of plasticizer (made by Negami Industries, UN-5500), and crosslinking agent (Japan Polyurethane Co., Ltd.) Manufacturing, Coronate L-45) 0.5 parts by weight to prepare an ethyl acetate solution of the adhesive composition.

The obtained ethyl acetate solution of the adhesive composition was applied to a 50 μm-thick transparent polyethylene naphthalate film subjected to corona treatment on one side by a doctor blade so that the thickness of the dried film became 30 μm. The halo-treated surface was heated at 110°C for 5 minutes to dry the coating solution. Thereafter, it was allowed to stand and cure at 40°C for 3 days to obtain a cutting tape.

(2) Evaluation of the elastic modulus of the adhesive layer before and after ultraviolet irradiation

As a sample for evaluation, an ethyl acetate solution of a photocurable adhesive was applied to a transparent polyethylene naphthalate with a thickness of 50 μm subjected to corona treatment on one side by a doctor blade so that the thickness of the dried film became 500 μm. The corona-treated surface of the film was heated at 110°C for 5 minutes to dry the coating solution, and thereafter, was allowed to stand and cure at 40°C for 3 days. The obtained adhesive tape was cut into a rectangular shape with a length of 0.6 cm and a width of 1.0 cm, and used as a sample for evaluation.

Next, an ultra-high pressure mercury lamp was used to adjust the contrast so that the irradiation intensity on the surface of the tape became 80 mW/cm ² and irradiated with 365 nm ultraviolet rays for 2 minutes to crosslink and harden the photocurable adhesive component. The samples for evaluation before and after hardening were measured at a shear mode angular frequency of 10 Hz for dynamic viscoelasticity measurement, and the value of the storage elastic modulus at 25°C was obtained from the measured values of continuous temperature increase from -50°C to 300°C.

As a result, the storage shear modulus at 25°C before ultraviolet irradiation was 1.1×10 ⁴ Pa, and the storage shear modulus at 25°C after ultraviolet irradiation was 2.3×10 ⁷ Pa.

(2) Manufacture of semiconductor wafers

The surface of the dicing tape on the adhesive layer side was attached to the surface of a silicon wafer with a diameter of 20 cm and a thickness of about 100 μm to obtain a laminate. Next, using an ultra-high pressure mercury lamp, the illuminance was adjusted so that the irradiation intensity on the surface of the dicing tape became 80 mW/cm ² and irradiated with ultraviolet light at 365 nm for 1 minute to crosslink and harden the photocurable adhesive component.

The wafer reinforced by the dicing tape is cut by a method of cutting and separation using a grindstone or the like to obtain a semiconductor wafer of 10 mm×10 mm. During cutting, in order to remove cutting debris, an aqueous solution of isopropyl alcohol is sprayed onto the surface of the wafer. During the dicing step, the wafer is sufficiently fixed with dicing tape to confirm that there is no positional deviation.

After the dicing step, the obtained semiconductor wafer is peeled off by pushing the needle from the side of the dicing tape.

The surface of all the obtained semiconductor wafers was observed with an optical microscope at a magnification of 100 times, and it was confirmed that there were no semiconductor wafers with residues attached at all.

(Example 2)

A silicon wafer with a diameter of 20 cm and a thickness of about 100 μm with a circuit having a trench with a height of 20 μm and a width of 100 μm formed on the surface is used as a silicon wafer, and a dicing tape is attached to the circuit surface to obtain a laminate. A semiconductor wafer was manufactured in the same manner as in Example 1.

As a result, during the dicing step, the wafer was sufficiently fixed by the dicing tape, and it was confirmed that there was no positional deviation. The surface of all the obtained semiconductor wafers was observed with an optical microscope at a magnification of 100 times to confirm the completeness. Semiconductor wafer without residues.

(Example 3)

A silicon wafer with a diameter of 20 cm and a thickness of about 100 μm with an electrode with a height of 80 μm and a thickness of about 100 μm is formed on the surface on which the passivation film made of polyimide is formed as a silicon wafer, and a dicing tape is attached to the electrode surface to obtain a laminate Except for this, a semiconductor wafer was manufactured in the same manner as in Example 1.

As a result, during the dicing step, the wafer was sufficiently fixed by the dicing tape, and it was confirmed that there was no positional deviation. The surface of all the semiconductor wafers obtained was observed with an optical microscope at a magnification of 100 times to confirm the complete Semiconductor wafer without residues.

(Example 4)

In the manufacture of semiconductor wafers, after crosslinking and curing the photocurable adhesive component and before dicing, the wafers reinforced with dicing tape are put into the reflow furnace, and a total of 3 times 260°C, 6 Except for the minute heat treatment, a semiconductor wafer was manufactured in the same manner as in Example 1.

As a result, during the dicing step, the wafer was sufficiently fixed by the dicing tape, and no positional deviation was confirmed at all. The surface of all the obtained semiconductor wafers was observed with an optical microscope at a magnification of 100 times to confirm that there was no Semiconductor wafer with residue attached.

(Comparative example 1)

A semiconductor wafer was produced in the same manner as in Example 1 except that the ultraviolet irradiation was not performed before the dicing step, and the photocurable adhesive component was not crosslinked or cured.

As a result, during the cutting step, the adhesive force of the cutting tape decreases, causing a slight positional deviation. In addition, the surface of all the obtained semiconductor wafers was observed with an optical microscope at a magnification of 100 times, and as a result, it was confirmed that there was a semiconductor wafer with adhered residues.

(Comparative example 2)

A semiconductor wafer was manufactured in the same manner as in Example 2 except that the dicing tape was irradiated with ultraviolet light before being attached to the wafer to crosslink and harden the photocurable adhesive component.

However, the dicing tape did not sufficiently adhere to the wafer, and the dicing step could not be performed.

(Comparative example 3)

A silicon wafer with a diameter of 20 cm and a thickness of about 100 μm with an electrode with a height of 20 μm and a thickness of about 100 μm is formed on the surface on which the passivation film made of polyimide is formed as a silicon wafer, and a dicing tape is attached to the electrode surface to obtain a laminate The semiconductor wafer was manufactured in the same manner as in Example 3 except that the ultraviolet irradiation was not performed before the dicing step, and the photocurable adhesive component was not crosslinked or cured.

As a result, during the cutting step, the adhesive force of the cutting tape decreases, causing a slight positional deviation. Moreover, the surface of all the obtained semiconductor wafers was observed with an optical microscope at a magnification of 100 times. As a result, a large number of semiconductor wafers with residues were confirmed.

(Comparative example 4)

A semiconductor wafer was manufactured in the same manner as in Example 4 except that the ultraviolet irradiation was not performed before the dicing step, and the photocurable adhesive component was not crosslinked or cured.

As a result, during the cutting step, the adhesive force of the cutting tape decreases, causing a slight positional deviation. Moreover, the surface of all the obtained semiconductor wafers was observed with an optical microscope at a magnification of 100 times. As a result, a large number of semiconductor wafers with residues were confirmed.

[Industry availability]

According to the present invention, it is possible to provide a method for manufacturing a semiconductor wafer, which is a method for manufacturing a semiconductor wafer by cutting a wafer with a dicing tape reinforced, and even when an aqueous organic solvent is used Position offset etc., and will not The residue of the semiconductor wafer was adhered.

Claims (7)

A method for manufacturing a semiconductor wafer, which has the following steps: a dicing tape attaching step, which is a dicing consisting of an adhesive layer and a substrate film containing at least a hardening adhesive component cross-linked and hardened by stimulation The adhesive tape is attached to the wafer from the side of the adhesive layer for reinforcement; the adhesive layer hardening step is to stimulate the above adhesive layer to crosslink and harden the hardened adhesive component; the cutting step is to The semiconductor wafer is obtained by cutting the wafer reinforced by the dicing tape; and the semiconductor wafer peeling step is to peel the semiconductor wafer from the dicing tape; the dynamic viscoelasticity measurement of the adhesive layer is performed before the dicing tape attaching step Shear mode and the storage shear modulus of elasticity measured at -50℃ to 300℃ at 25℃ is 1.0×10 ² ~2.0×10 ⁵ Pa, and after the adhesive layer hardening step The storage shear modulus of elasticity of the adhesive layer in the shear mode of dynamic viscoelasticity measurement and the continuous temperature increase from -50°C to 300°C at 25°C is 2.0×10 ⁵ ~1.0×10 ⁹ Pa. For example, in the method of manufacturing a semiconductor wafer according to item 1, the surface of the wafer on the side to which the single-sided adhesive tape is attached has irregularities with a height of 20 μm or more. For example, in the method of manufacturing a semiconductor wafer according to item 2 of the patent application, the thickness of the adhesive layer of the dicing tape is thinner than the height of the unevenness of the wafer. For example, the method for manufacturing a semiconductor chip according to patent application No. 1, 2 or 3 has a wafer processing step after the adhesive layer hardening step and before the dicing step. The wafer processing step is to reinforce the dicing tape The wafer is processed with heating. For example, in the method of manufacturing a semiconductor wafer according to item 1, 2 or 3 of the patent application, the stimulus for crosslinking and curing the hardening adhesive component is ultraviolet light. A manufacturing method of a semiconductor wafer as claimed in item 1, 2 or 3, wherein the adhesive layer further contains a gas generating agent that generates gas by stimulation, and the stimulation is given to the gas generating agent in the semiconductor wafer peeling step Produce gas. For example, in the method of manufacturing a semiconductor wafer according to item 1, 2 or 3, the adhesive layer of the dicing tape directly contacts the wafer.