TWI673725B - 太陽能電池集電電極形成用導電性組成物、太陽能電池單元及太陽能電池模組 - Google Patents
太陽能電池集電電極形成用導電性組成物、太陽能電池單元及太陽能電池模組 Download PDFInfo
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- TWI673725B TWI673725B TW104122319A TW104122319A TWI673725B TW I673725 B TWI673725 B TW I673725B TW 104122319 A TW104122319 A TW 104122319A TW 104122319 A TW104122319 A TW 104122319A TW I673725 B TWI673725 B TW I673725B
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- solar cell
- collector electrode
- acid
- carboxylic acid
- forming
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- JGOAZQAXRONCCI-SDNWHVSQSA-N n-[(e)-benzylideneamino]aniline Chemical compound C=1C=CC=CC=1N\N=C\C1=CC=CC=C1 JGOAZQAXRONCCI-SDNWHVSQSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical class 0.000 description 1
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- VENBJVSTINLYEU-UHFFFAOYSA-N phenol;trifluoroborane Chemical compound FB(F)F.OC1=CC=CC=C1 VENBJVSTINLYEU-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- CCDXIADKBDSBJU-UHFFFAOYSA-N phenylmethanetriol Chemical compound OC(O)(O)C1=CC=CC=C1 CCDXIADKBDSBJU-UHFFFAOYSA-N 0.000 description 1
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- DBIWHDFLQHGOCS-UHFFFAOYSA-N piperidine;trifluoroborane Chemical compound FB(F)F.C1CCNCC1 DBIWHDFLQHGOCS-UHFFFAOYSA-N 0.000 description 1
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- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/56—Amines together with other curing agents
- C08G59/58—Amines together with other curing agents with polycarboxylic acids or with anhydrides, halides, or low-molecular-weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/42—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/72—Complexes of boron halides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
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Abstract
本發明之課題在於提供一種可以形成對透明導電層具有良好密著性之集電電極的太陽能電池集電電極形成用導電性組成物、以及具有使用其而形成之集電電極的太陽能電池單元及太陽能電池模組。本發明之太陽能電池集電電極形成用導電性組成物含有金屬粉末(A)、環氧樹脂(B)、陽離子類硬化劑(C)以及嵌段化羧酸(D),上述嵌段化羧酸(D)係使選自羧酸及羧酸酐之化合物(d1)與乙烯基醚化合物(d2)反應而獲得之化合物。
Description
本發明係關於一種太陽能電池集電電極形成用導電性組成物、太陽能電池單元及太陽能電池模組。
隨著大家對地球環境問題之關心日益高漲,業者正在積極開發具有各種構造與構成之可將太陽光等光能轉換為電能的太陽能電池。其中,使用矽等半導體基板之太陽能電池由於其轉換效率、製造成本等優勢,獲得最普遍使用。
作為形成此種太陽能電池之電極的材料,已知有環氧樹脂類漿料狀材料。
例如,於專利文獻1中已知有「一種導電膠,其含有金屬粉末(A)、具有可與羧基反應之基團之樹脂(B)及可與上述樹脂反應之硬化劑(C),其特徵在於,硬化劑係潛伏型產生羧基之化合物」(〔申請專利範圍
1〕)。
〔專利文獻1〕日本專利特開2004-355933號公報
然而,本發明人等對專利文獻1所記載之導電膠進行研究後明確,於透明導電層(例如透明導電氧化物層(TCO))上形成集電電極時,透明導電層與集電電極之密著性有可能較差。
因此,本發明之課題在於提供一種可以形成對透明導電層具有良好密著性之集電電極的太陽能電池集電電極形成用導電性組成物、以及具有使用其而形成之集電電極的太陽能電池單元及太陽能電池模組。
為解決上述課題,本發明人等反復努力研究後發現,藉由使用嵌段化羧酸以及作為環氧樹脂之硬化劑的陽離子類硬化劑,可以形成對透明導電層具有良好密著性之電極,從而完成本發明。
即,本發明人等發現,藉由以下構成,可解決上述問題。
〔1〕一種太陽能電池集電電極形成用導電性組成物,其含有金屬粉末(A)、環氧樹脂(B)、陽離子類硬化劑(C)以及嵌段化羧酸(D),上述嵌段化羧酸(D)係使選自羧酸及羧酸酐之化合物(d1)與乙烯基醚化合物(d2)反應而獲得之化合物。
〔2〕如〔1〕所記載之太陽能電池集電電極形成用導電性組成物,其中,相對於上述金屬粉末(A)100質量份,上述嵌段化羧酸(D)之含量為0.05~5質量份。
〔3〕如〔1〕或〔2〕所記載之太陽能電池集電電極形成用導電性組成物,其中,上述金屬粉末(A)同時使用球狀金屬粉末(A1)與片狀金屬粉末(A2),該等之質量比(A1:A2)為70:30~30:70。
〔4〕如〔1〕至〔3〕中任一項所記載之太陽能電池集電電極形成用導電性組成物,其中,上述嵌段化羧酸(D)係使二羧酸與二乙烯基醚化合物進行加成聚合而獲得之聚合物型嵌段化羧酸。
〔5〕如〔1〕至〔4〕中任一項所記載之太陽能電池集電電極形成用導電性組成物,其中,上述化合物(d1)之碳原子數為3~9。
〔6〕如〔1〕至〔5〕中任一項所記載之太陽能電池集電電極形成用導電性組成物,其中,上述化合物(d1)之碳原子數為3、5、7及9中的任一個。
〔7〕如〔1〕至〔6〕中任一項所記載之太陽能電池
集電電極形成用導電性組成物,其中,上述化合物(d1)係選自由丙二酸、戊二酸、庚二酸及壬二酸所組成之群組中之至少一種二羧酸。
〔8〕一種太陽能電池單元,其具備集電電極及作為上述集電電極之基底層之透明導電層,上述集電電極使用〔1〕至〔7〕中任一項所記載之太陽能電池集電電極形成用導電性組成物而形成。
〔9〕一種太陽能電池模組,其使用〔8〕所記載之太陽能電池單元。
如下所述,根據本發明,可提供一種可以形成對透明導電層具有良好密著性之集電電極的太陽能電池集電電極形成用導電性組成物、以及具有使用其而形成之集電電極的太陽能電池單元及太陽能電池模組。
又,若使用本發明之太陽能電池集電電極形成用導電性組成物,即便實施低溫(450℃以下(尤其是200℃以下))燒結,亦可形成對透明導電層具有良好密著性之集電電極,因此,亦具有可減輕對太陽能電池單元之熱損害之效果,非常有用。
11‧‧‧n型單晶矽基板
12a、12b‧‧‧i型非晶矽層
13a‧‧‧p型非晶矽層
13b‧‧‧n型非晶矽層
14a、14b‧‧‧透明導電層
15a、15b‧‧‧集電電極
100‧‧‧太陽能電池單元
圖1係表示太陽能電池單元之較佳實施方式之一例的
剖面圖。
以下,針對本發明之太陽能電池集電電極形成用導電性組成物(以下,亦簡稱為「本發明之導電性組成物」)、以及具有使用其而形成之集電電極之太陽能電池單元及太陽能電池模組進行說明。
另外,本說明書中使用「~」表示之數值範圍,係作為下限值及上限值包含「~」前後所記載的數值之範圍。
本發明之導電性組成物係用於形成太陽能電池集電電極之導電性組成物,其含有金屬粉末(A)、環氧樹脂(B)、陽離子類硬化劑(C)以及嵌段化羧酸(D),上述嵌段化羧酸(D)係使選自羧酸及羧酸酐之化合物(d1)與乙烯基醚化合物(d2)反應而獲得之化合物。
又,如下所述,根據需要,本發明之導電性組成物亦可含有苯氧樹脂(E)、脂肪酸金屬鹽(F)以及溶劑(G)等。
於本發明中,如上所述,藉由配伍陽離子類硬化劑(C)以及特定嵌段化羧酸(D),導電性組成物可以形成對透明導電層具有良好密著性之電極。
雖然其詳細原因尚未清楚,但可大致推測如下。
首先,於形成電極等時之加熱乾燥中,嵌段化羧酸
(D)之嵌段被除去,生成羧酸,該羧酸之羧基與環氧樹脂(B)反應,進行硬化反應。
繼而,藉由體系內另行存在陽離子型硬化劑(C),以上述方式生成之羧酸至少一部分不與環氧樹脂(B)反應,而殘存於體系內,根據該殘存之羧酸極性之高低,顯現其與透明導電層之密著性。
以下,對本發明之導電性組成物所含有之金屬粉末(A)、環氧樹脂(B)、陽離子類硬化劑(C)及嵌段化羧酸(D)以及根據需要可含有之其他成分進行詳細說明。
本發明之導電性組成物所含有之金屬粉末(A)並無特別限定,例如可使用電阻率20×10-6Ω.cm以下之金屬材料。
作為上述金屬材料,具體而言,可列舉例如金(Au)、銀(Ag)、銅(Cu)、鋁(Al)、鎂(Mg)、以及鎳(Ni)等,該等可單獨使用一種,亦可同時使用兩種以上。
其中,考量到可形成低接觸電阻之集電電極之理由,較佳為銀粉末、銅粉末,更較佳為銀粉末。
另外,此種銀粉末亦可為於銀以外之金屬粉(例如,鎳粉、銅粉等)表面塗敷銀而成之銀包金屬粉。
於本發明中,考量到印刷性(尤其是網版印
刷性)良好之理由,上述金屬粉末(A)較佳使用球狀金屬粉末(A1),更較佳同時使用球狀金屬粉末(A1)與片(鱗片)狀金屬粉末(A2),進一步較佳按質量比(A1:A2)為70:30~30:70之比例同時使用球狀金屬粉末(A1)與片狀金屬粉末(A2)。
此處,球狀係指長徑/短徑之比率為2以下之粒子形狀,片狀係指長徑/短徑之比率超過2之形狀。
作為上述金屬粉末(A)之球狀金屬粉末(A1)之平均粒徑,考量到印刷性更加良好之理由,較佳為0.5~10μm,更較佳為0.5~5.0μm。
此處,球狀金屬粉末(A1)之平均粒徑係指球狀金屬粉末之粒徑平均值,係使用雷射繞射式粒度分布測定裝置測定之50%體積累積直徑(D50)。另外,關於作為計算平均值之依據之粒徑,當金屬粉末剖面為橢圓形時,係指將其長徑與短徑之合計值除以2之平均值,為正圓形時,係指其直徑。
作為上述金屬粉末(A)之片狀金屬粉末(A2)之平均厚度,考量到印刷性更加良好,且易漿料化之理由,較佳為0.05~2.0μm,更較佳為0.05~1.0μm。
此處,片狀金屬粉末(A2)之平均厚度係指,利用BET法(氣體吸附法)測定片狀金屬粉末之比表面積,將測定值設為S(m2/g),根據下述公式(i)計算出的值。
平均厚度=0.19/S…(i)
於本發明中,可以使用市售品作為上述金屬粉末(A)。
作為球狀銀粉末之市售品之具體例,可列舉AG2-1C(平均粒徑:1.0μm,DOWA Electronics公司製造)、AG4-8F(平均粒徑:2.2μm,DOWA Electronics公司製造)、AG3-11F(平均粒徑:1.4μm,DOWA Electronics公司製造)、AgC-102(平均粒徑:1.5μm、福田金屬箔粉工業公司製造)、AgC-103(平均粒徑:1.5μm、福田金屬箔粉工業公司製造)、EHD(平均粒徑:0.5μm、三井金屬公司製造)等。
又,作為片狀銀粉末之市售品之具體例,可列舉Ag-XF301K(平均厚度:0.1μm、福田金屬箔粉工業公司製造)等。
本發明之導電性組成物中所使用之環氧樹脂(B)若為由1個分子中有2個以上環氧乙烷環(環氧基)之化合物組成之樹脂,則無特別限定,一般而言,環氧當量為90~2000g/eq。
作為此種環氧樹脂,可使用以往眾所週知之環氧樹脂。
具體而言,可列舉例如雙酚A型、雙酚F型、溴化
雙酚A型、氫化雙酚A型、雙酚S型、雙酚AF型、聯苯型等具有二苯基之環氧化合物,聚烷二醇型、烷二醇型之環氧化合物,具有萘環之環氧化合物,具有茀基之環氧化合物等雙官能型縮水甘油醚類環氧樹脂;苯酚酚醛型、鄰甲酚醛型、三羥基苯基甲烷型、四苯酚基乙烷型等多官能型縮水甘油醚類環氧樹脂;二聚酸等合成脂肪酸之縮水甘油酯類環氧樹脂;N,N,N',N'-四縮水甘油基二胺基二苯基甲烷(TGDDM)、四縮水甘油基二胺基二苯基碸(TGDDS)、四縮水甘油基間苯二甲胺(TGMXDA)、三縮水甘油基對胺基苯酚、三縮水甘油基間胺基苯酚、N,N-二縮水甘油基苯胺、四縮水甘油基1,3-環己二甲胺(TG1,3-BAC)、異氰尿酸三縮水甘油酯(TGIC)等縮水甘油胺類環氧樹脂;具有三環〔5.2.1.02,6〕癸烷環之環氧化合物,具體而言,例如將雙環戊二烯,以及間甲酚等甲酚類或苯酚類進行聚合後,再使環氧氯丙烷發生反應,可透過這一眾所週知製造方法而獲得之環氧化合物;脂環型環氧樹脂;以Toray Thiokol公司製FLEP10為代表之環氧樹脂主鏈中具有硫原子之環氧樹脂;具有聚胺酯鍵之聚胺酯改性環氧樹脂;以及含有聚丁二烯、液狀聚丙烯腈-丁二烯橡膠或丙烯腈-丁二烯橡膠(NBR)之橡膠改性環氧樹脂等。
該等可單獨使用一種,亦可同時使用兩種以
上。
此外,其中,考量到硬化性、耐熱性、耐久性及成本之觀點,較佳為雙酚A型環氧樹脂,以及雙酚F型環氧樹脂。
於本發明中,上述環氧樹脂(B)較佳使用硬化收縮較少之環氧樹脂。由於作為基板之矽晶圓易破損,因此若使用硬化收縮較大之環氧樹脂,會導致晶圓破裂或損壞。近來,為降低成本,矽晶圓不斷進行薄型化,而硬化收縮較少之環氧樹脂還兼具抑制晶圓彎曲之效果。
考量到降低硬化收縮,所形成之集電電極之接觸電阻變低,且與透明導電層之密著性更加良好之理由,較佳加成有環氧乙烷及/或環氧丙烷之環氧樹脂。
此處,關於加成有環氧乙烷及/或環氧丙烷之環氧樹脂,例如可在雙酚A、雙酚F等物質與環氧氯丙烷發生反應調製環氧樹脂時,添加乙烯及/或丙烯進行加成(改性)而獲得。
作為加成有環氧乙烷及/或環氧丙烷之環氧樹脂,可使用市售品,作為其具體例,可列舉加成環氧乙烷之雙酚A型環氧樹脂(BPO-60E、新日本理化公司製造)、加成環氧丙烷之雙酚A型環氧樹脂(BPO-20E、新日本理化公司製造)、加成環氧丙烷之雙酚A型環氧樹脂(EP-4010S、ADEKA公司製造)、以及加成環氧丙烷之雙酚A型環氧樹脂(EP-4000S、ADEKA公司製造)等。
作為調整環氧樹脂之硬化收縮之其他方法,
可列舉同時使用2種以上不同分子量之環氧樹脂之方法。尤其是,考量到所形成之集電電極之接觸電阻變低,且與透明導電層之密著性更加良好之理由,較佳同時使用環氧當量為1500~4000g/eq之雙酚A型環氧樹脂(B1)以及環氧當量為1000g/eq以下之多元醇類縮水甘油型環氧樹脂(B2)或者環氧當量為1000g/eq以下之稀釋型雙酚A型環氧樹脂(B3)。
上述雙酚A型環氧樹脂(B1)為環氧當量1500~4000g/eq之雙酚A型環氧樹脂。
上述雙酚A型環氧樹脂(B1)由於環氧當量為上述範圍,因此如上所述,若同時使用雙酚A型環氧樹脂(B1),則本發明之導電性組成物之硬化收縮受到抑制,與基板及透明導電層之密著性亦良好。考量到體積電阻率更低,環氧當量較佳為2000~4000g/eq,更較佳為2000~3500g/eq。
上述多元醇類縮水甘油型環氧樹脂(B2)為環氧當量1000g/eq以下之多元醇類縮水甘油型環氧樹脂。
上述多元醇類縮水甘油型環氧樹脂(B2)由於環氧當量為上述範圍,因此如上所述,若同時使用多元醇類縮水甘油型環氧樹脂(B2),則本發明之導電性組成物之黏度
良好,且印刷性良好。
此外,考量到網版印刷時黏度適當之理由,上述多元醇類縮水甘油型環氧樹脂(B2)之環氧當量較佳為100~400g/eq,更較佳為100~300g/eq。
稀釋型雙酚A型環氧樹脂(B3)為環氧當量1000g/eq以下之雙酚A型環氧樹脂。其在無損環氧樹脂特性之情況下,使用反應性稀釋劑實施過低黏度化處理。
上述稀釋型雙酚A型環氧樹脂(B3)由於環氧當量為上述範圍,因此如上所述,若同時使用稀釋型雙酚A型環氧樹脂(B3),則本發明之導電性組成物之黏度良好,且印刷性良好。
此外,考量到網版印刷時黏度適當之理由,上述稀釋型雙酚A型環氧樹脂(B3)之環氧當量較佳為100~400g/eq,更較佳為100~300g/eq。
於本發明中,考量到所形成之集電電極之接觸電阻變低,且與透明導電層之密著性更加良好之理由,相對於上述金屬粉末(A)100質量份,上述環氧樹脂(B)之含量較佳為2~20質量份,更較佳為2~15質量份,進一步較佳為2~10質量份。
本發明之導電性組成物中所使用之陽離子類硬化劑
(C)並無特別限定,較佳為胺類、鋶類、銨類、鏻類硬化劑。
作為上述陽離子類硬化劑(C),具體而言,可列舉例如三氟化硼乙胺、三氟化硼哌啶、三氟化硼苯酚、p-甲氧基苯重氮六氟磷酸鹽、二苯基碘鎓六氟磷酸鹽、四苯基鋶、四-n-丁基四苯硼酸鏻、四-n-丁基鏻-o,o-二乙基二硫代磷酸酯、下述式(I)所表示之鋶鹽等,該等可單獨使用一種,亦可同時使用兩種以上
其中,考量到硬化時間變短之理由,較佳使用下述式(I)所表示之鋶鹽。
(式中,R1表示氫原子、碳原子數1~4之烷基或鹵素原子,R2表示碳原子數1~4之烷基、可以被碳原子數1~4之烷基取代之苄基或α-萘基甲基,R3表示碳原子數1~4之烷基。此外,Q表示由下述式(a)~(c)中任一個所表示之基團,X表示SbF6、PF6、CF3SO3、(CF3SO2)2N、BF4、B(C6F5)4或者Al(CF3SO3)4。)
(式(a)中,R表示氫原子、乙醯基、甲氧羰基或苄氧羰基)
上述式(I)所表示之鋶鹽中,考量到可以形成可焊性良好之電極之理由,上述式(I)中之X較佳為SbF6所表示之鋶鹽,作為其具體例,可列舉下述式(1)及(2)所表示之化合物。
於本發明中,考量到因熱而活化,可充分進行環氧基之開環反應之理由,相對於上述環氧樹脂(B)100質量份,上述陽離子類硬化劑(C)之含量較佳為1~10質量份,更較佳為1~5質量份。
本發明之導電性組成物所含有之嵌段化羧酸(D)係使選自羧酸及羧酸酐之化合物(d1)與乙烯基醚化合物(d2)反應而獲得之化合物。
即,嵌段化羧酸(D)之「嵌段化」係指,使源自化合物(d1)之羧基(-COOH)與乙烯基醚化合物(d2)之乙烯基醚基(-O-CH=CH2)或者乙烯基硫醚基(-S-CH=CH2)進行加成反應,藉此保護羧基。
另外,關於嵌段化羧酸(D),對至少一部分羧基進行嵌段化處理即可,可以保留一部分未嵌段之羧基。
此處,關於上述化合物(d1)與乙烯基醚化合物(d2)之反應,可列舉例如使羧酸化合物與乙烯基醚化合物反應之形態,使羧酸酐與羥基乙烯基醚化合物反應之形態,用二乙烯基醚化合物對羧酸酐與多元醇之反應物進行加成聚合之形態,使二羧酸與二乙烯基醚化合物進行加成聚合之形態等。
生成嵌段化羧酸(D)所使用之化合物(d1)中,作為羧酸化合物,具體而言,可列舉例如草酸、丙二酸、琥珀酸、己二酸、戊二酸、2,4-二乙基戊二酸、2,4-二甲基戊二酸、庚二酸、壬二酸、癸二酸、環己烷二羧酸、馬來酸、富馬酸、二乙醇酸等。
另外,於本發明中,此種羧酸化合物係包含上述反應形態所示之「羧酸酐與多元醇之反應物」者,作為該反應物之具體例,於無溶劑或適當之溶劑中,以室溫~200℃使後述羧酸酐與多元醇(例如,乙二醇、二乙二醇、丙二醇等)反應,從而可以獲得所述反應物。
又,生成嵌段化羧酸(D)所使用之化合物(d1)中,作為羧酸酐,具體而言,可列舉例如琥珀酸酐、馬來酸酐、衣康酸酐、檸康酸酐、四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、4-甲基四氫鄰苯二甲酸酐、4-甲基六氫鄰苯二甲酸酐、3-甲基四氫鄰苯二甲酸酐、十二烯基琥珀酸酐、鄰苯二甲酸酐、二乙醇酸酐、戊二酸酐等。
於本發明中,考量到所形成之集電電極與透明導電層具有更加良好之密著性的理由,上述化合物(d1)之碳原子數較佳為3~9,考量到密著性進一步良好之理由,上述化合物(d1)之碳原子數更較佳為奇數(尤其是3、5、7、9中的任一個)。
即,上述化合物(d1)較佳為選自由丙二酸、戊二酸、庚二酸及壬二酸所組成之群組中之至少一種二羧酸。
雖然密著性提高之原因尚不清楚,但推測如下:如上所述,嵌段化羧酸(D)之嵌段被除去,一部分羧酸與環氧樹脂反應,因此,所形成之集電電極與透明導電層之間的距離變短,兩者間的相互作用提高。
生成嵌段化羧酸(D)所使用之乙烯基醚化合物(d2)若為具有乙烯基醚基(-O-CH=CH2)或者乙烯基硫醚基(-S-CH=CH2)之化合物,則無特別限定,可列舉例如脂肪族乙烯基醚、脂肪族乙烯基硫醚、環狀乙烯基醚、環狀乙烯基硫醚等。
作為脂肪族乙烯基醚,具體而言,可列舉例如甲基乙烯基醚、乙基乙烯基醚、異丙基乙烯基醚、正丙基乙烯基醚、正丁基乙烯基醚、異丁基乙烯基醚、2-乙基己基乙烯基醚、環己基乙烯基醚等單乙烯基醚化合物;丁二醇二乙烯基醚、環己二醇二乙烯基醚、環己烷二甲醇二乙烯基醚、二乙二醇二乙烯基醚、三乙二醇二乙烯基醚、四乙二醇二乙烯基醚、乙二醇二乙烯基醚、己二醇二乙烯基醚等二乙烯基醚化合物;三羥甲基丙烷三乙烯基醚等三乙烯基醚化合物;季戊四醇四乙烯基醚等四乙烯基醚化合物等。另外,作為脂肪族乙烯基硫醚,可列舉對應上述例示之脂肪族乙烯基醚的硫代化合物。
又,作為環狀乙烯基醚,具體而言,可列舉例如2,3-二氫呋喃、3,4-二氫呋喃、2,3-二氫-2H-吡喃、3,4-二氫-2H-吡喃、3,4-二氫-2-甲氧基-2H-吡喃、3,4-二氫-4,4-二甲基-2H-吡喃-2-酮、3,4-二氫-2-乙氧基-2H-吡喃、3,4-二氫-2H-吡喃-2-羧酸鈉等。另外,作為環狀乙烯基硫醚,可列舉對應上述例示之環狀乙烯基醚的硫代化合物。
又,乙烯基醚化合物(d2)中,作為與羧酸酐發生反應所使用之羥基乙烯基醚化合物,具體而言,可
列舉例如羥基甲基乙烯基醚、羥基乙基乙烯基醚、羥基丙基乙烯基醚、羥基丁基乙烯基醚、羥基戊基乙烯基醚、羥基己基乙烯基醚、羥基庚基乙烯基醚、羥基辛基乙烯基醚、羥基壬基乙烯基醚、4-羥基環己基乙烯基醚、3-羥基環己基乙烯基醚、2-羥基環己基乙烯基醚、環己烷二甲醇單乙烯基醚、二乙二醇單乙烯基醚、三乙二醇單乙烯基醚、四乙二醇單乙烯基醚等。
使用上述化合物(d1)及乙烯基醚化合物(d2)合成嵌段化羧酸(D)之方法並無特別限定,可依照加成反應之常用方法進行合成。例如,以100℃混合上述化合物(d1)及乙烯基醚化合物(d2)4小時,藉此可以合成對羧基嵌段之嵌段化羧酸(D)。
於本發明中,相對於上述金屬粉末(A)100質量份,上述嵌段化羧酸(D)之含量較佳為0.05~5質量份,考量到所形成之集電電極接觸電阻變低之理由,相對於上述金屬粉末(A)100質量份,更較佳為0.05~1質量份。
考量到與上述環氧樹脂(B)相溶,可獲得穩定之漿料狀態之理由,本發明之導電性組成物較佳含有苯氧樹脂(E)。
作為上述苯氧樹脂(E),具體而言,可列舉例如雙酚A型苯氧樹脂、雙酚F型苯氧樹脂。
於本發明中,上述苯氧樹脂(E)可以使用市售品,至於其具體例,可列舉雙酚A型苯氧樹脂(1256,日本環氧樹脂公司製造)、雙酚A型苯氧樹脂(YP-50,東都化成公司製造)、雙酚F型苯氧樹脂(FX-316,東都化成公司製造)、雙酚A型與雙酚F型之共聚合型(YP-70,東都化成公司製造)等。
又,於本發明中,考量到所形成之集電電極之接觸電阻變低,且與透明導電層之密著性更加良好之理由,相對於上述金屬粉末(A)100質量份,含有上述苯氧樹脂(E)時之含量較佳為0.1~10質量份,更較佳為0.5~5質量份。
考量到所形成之集電電極之接觸電阻變低之理由,本發明之導電性組成物較佳含有脂肪酸金屬鹽(F)。
上述脂肪酸金屬鹽(F)若為有機羧酸之金屬鹽,則無特別限定,例如較佳使用選自由銀、鎂、鎳、銅、鋅、釔、鋯、錫及鉛所組成之群組中的至少一種以上金屬之羧酸金屬鹽。
其中,較佳使用銀之羧酸金屬鹽(以下,亦稱為「羧酸銀鹽」)。
此處,上述羧酸銀鹽若為有機羧酸(脂肪酸)之銀鹽,則無特別限定,可使用例如日本專利特開2008-198595號公報〔0063〕~〔0068〕段落中記載之脂肪酸金
屬鹽(尤其是3級脂肪酸銀鹽)、日本專利特許第4482930號公報〔0030〕段落中記載之脂肪酸銀鹽、日本專利特開2010-92684號公報〔0029〕~〔0045〕段落中記載之具有1個以上氫氧基之脂肪酸銀鹽、該公報〔0046〕~〔0056〕段落中記載之2級脂肪酸銀鹽以及日本專利特開2011-35062號公報〔0022〕~〔0026〕中記載之羧酸銀等。
於本發明中,考量到所形成之集電電極之接觸電阻更低之理由,相對於上述金屬粉末(A)100質量份,含有上述脂肪酸金屬鹽(F)時之含量較佳為0.1~10質量份,更較佳為0.5~5質量份。
考量到印刷性等作業性之觀點,本發明之導電性組成物較佳含有溶劑(G)。
上述溶劑(G)若可將本發明之導電性組成物塗佈到基板上,則無特別限定,至於其具體例,可列舉丁基卡必醇、甲基乙基酮、異佛爾酮、α-松油醇等,該等可單獨使用一種,亦可同時使用兩種以上。
本發明之導電性組成物亦可根據需要,含有還原劑等添加劑。
作為上述還原劑,具體而言,可列舉如乙二醇類等。
此外,本發明之導電性組成物,並不需要一般用作高溫(700~800℃)燒結型導電膠之玻璃介質,其相對於上述金屬粉末(A)100質量份,較佳不足0.1質量份,且較佳實質上不含有。
本發明之導電性組成物之製造方法並無特別限定,可列舉用滾筒、捏合機、押出機、萬能攪拌機等混合上述各成分之方法。
本發明之太陽能電池單元具備集電電極及作為上述集電電極之基底層之透明導電層,上述集電電極使用上述本發明之導電性組成物而形成。
作為本發明之太陽能電池單元之較佳實施方式,可列舉一種太陽能電池(例如異質結太陽能電池)單元,其以n型單晶矽基板為中心,上下具備非晶矽層及透明導電層(例如TCO),並以上述透明導電層為基底層,於上述透明導電層上使用上述本發明之導電性組成物形成集電電極。
上述太陽能電池單元係單晶矽與非晶矽混合型之太陽能電池單元,具有高轉換效率。
以下,利用圖1,對本發明之太陽能電池單元之較佳實施方式進行說明。
如圖1所示,太陽能電池單元100以n型單晶矽基板11為中心,上下具備i型非晶矽層12a及12b、
p型非晶矽層13a及n型非晶矽層13b、透明導電層14a及14b以及使用上述本發明之導電性組成物形成之集電電極15a及15b。
上述n型單晶矽基板為摻雜有形成n型之雜質之單晶矽層。作為形成n型之雜質,可列舉例如磷、砷等。
上述i型非晶矽層為未摻雜之非晶矽層。
上述p型非晶矽為摻雜有形成p型之雜質之非晶矽層。作為形成p型之雜質,可列舉例如硼、鋁等。
上述n型非晶矽為摻雜有形成n型之雜質之非晶矽層。形成n型之雜質如上所述。
上述集電電極為使用上述本發明之導電性組成物而形成之集電電極。
集電電極之配置(間距)、形狀、高度(較佳數~數十μm)、寬度、縱橫比(高度/寬度)(較佳為0.4以上)等並無特別限定。
另外,如圖1所示,集電電極通常存在多個。該情形下,可以僅一部分集電電極由本發明之導電性組成物形成,但較佳集電電極全部由本發明之導電性組成物形成。
作為上述透明導電層材料之具體例,可列舉氧化鋅、氧化錫、氧化銦、氧化鈦等單一金屬氧化物;氧化銦鋅(ITO)、氧化銦鈦、氧化錫鎘等多種金屬氧化物;以及
摻鎵氧化鋅、摻鋁氧化鋅、摻硼氧化鋅、摻鈦氧化鋅、摻鈦氧化銦、摻鋯氧化銦、摻氟氧化錫等摻雜型金屬氧化物;等。
本發明之太陽能電池單元之製造方法並無特別限定,例如可依照日本專利特開2010-34162號公報中記載之方法等製造。
具體而言,可藉由電漿輔助化學氣相沉積法(plasma enhanced chemical vapor deposition,PECVD)等方法,於n型單晶矽基板11之單側主面上形成i型非晶矽層12a。進而,藉由電漿輔助化學氣相沉積法等方法,於形成之i型非晶矽層12a上形成p型非晶矽層13a。
接著,藉由電漿輔助化學氣相沉積法等方法,於n型單晶矽基板11之另一側主面上形成i型非晶矽層12b。進而,藉由電漿輔助化學氣相沉積法等方法,於形成之i型非晶矽層12b上形成n型非晶矽層13b。
接著,藉由濺射等方法,於p型非晶矽層13a及n型非晶矽層13b上形成氧化銦錫等透明導電層14a及14b。
繼而,於形成之透明導電層14a及14b上塗佈本發明之導電性組成物,形成配線,進而,對形成之配線實施熱處理(乾燥及燒結),藉此,形成集電電極15a及15b。
以下,對形成配線之製程(配線形成製程)及對配線實施熱處理之製程(熱處理製程)進行詳細說明。
上述配線形成製程係於透明導電層上塗佈本發明之導電性組成物,形成配線之製程。
此處,作為塗佈方法,具體而言可列舉如噴墨、網版印刷、凹版印刷、膠版印刷、以及凸版印刷等。
上述熱處理製程係對上述配線形成製程中形成之塗膜實施熱處理,形成導電性配線(集電電極)之製程。
上述熱處理較佳為450℃以下之溫度條件,具體而言,較佳以150~200℃之溫度實施數秒~數十分鐘的加熱(燒結)處理。
以下,利用實施例,詳細說明本發明之導電性組成物。但本發明並非限定於此。
於球磨機中,依照下述表1中所示之組成比(質量比)添加下述表1所示之銀粉等,並將該等混合,調製導電性組成物。
另一方面,於鈉鈣玻璃表面,將ITO(摻雜有Sn之氧化銦)製成膜作為透明導電層,由此製作用於評估之玻
璃基板。
接著,利用網版印刷,將調製之各導電性組成物塗佈於玻璃基板上,形成6條寬1.5mm、長15mm之細線狀測試圖案,並以1.8mm間隔排列。
於烤爐中以200℃乾燥30分鐘,形成細線狀導電薄膜(細線電極),製作太陽能電池單元樣本。
針對所製作之太陽能電池單元樣本,使用數位萬用表(HIOKI公司製造:3541 RESISTANCE HiTESTER)測定各細線電極間之電阻值,然後利用Transfer Length Method(TLM,傳輸線模型法)計算出接觸電阻。結果如下述表1所示。
於製作之太陽能電池單元樣本之測試圖案(細線電極)上焊接焊帶,然後進行180度拉伸試驗,計算剝離強度。結果如下述表1所示。剝離強度為1.0N以上時,判斷為充分密著。
表1中各成分使用以下物質。
.球狀金屬粉末A1-1:AgC-103(形狀:球狀,平均粒徑:1.5μm,福田金屬箔粉工業公司製造)
.片狀金屬粉末A2-1:AgC-224(形狀:片狀,平均厚度:0.7μm,福田金屬箔粉工業公司製造)
.雙酚A型環氧樹脂B1-1:EP-4100E(ADEKA公司製造)
.雙酚A型環氧樹脂B1-2:YD-019(新日鐵住金公司製造)
.多元醇類縮水甘油型環氧樹脂B2-1:EX-850(Nagase chemteX公司製造)
.雙酚A型苯氧樹脂:YP-50S(新日鐵住金公司製造)
.嵌段化羧酸D-1:Santashiddo G(日油公司製造)
.嵌段化羧酸D-2:使壬二酸(碳原子數9)18.8g與2-乙基己基乙烯基醚32.8g於100℃下反應4小時,對羧基嵌段而生成的聚羧酸。另外,蒸餾除去未反應之乙烯基醚化合物。
.嵌段化羧酸D-3:使丙二酸(碳原子數3)10.4g與2-乙基己基乙烯基醚32.8g於100℃下反應4小時,對羧基嵌段而生成的聚羧酸。另外,蒸餾除去未反應之乙烯基醚化合物。
.嵌段化羧酸D-4:使己二酸(碳原子數6)14.6g與
2-乙基己基乙烯基醚32.8g於100℃下反應4小時,對羧基嵌段而生成的聚羧酸。另外,蒸餾除去未反應之乙烯基醚化合物。
.嵌段化羧酸D-5:使癸二酸(碳原子數10)20.2g與2-乙基己基乙烯基醚32.8g於100℃下反應4小時,對羧基嵌段而生成的聚羧酸。另外,蒸餾除去未反應之乙烯基醚化合物。
.聚羧酸銀鹽(1,2,3,4-丁烷四羧酸銀鹽):首先,將氧化銀(東洋化學工業公司製造)50g、1,2,3,4-丁烷四羧酸(新日本理化公司製造)25.29g及甲基乙基酮(MEK)300g投入球磨機中,室溫下攪拌24小時,使其反應。接著,利用吸引過濾法除去MEK,對所獲粉末進行乾燥,調製成白色1,2,3,4-丁烷四羧酸銀鹽。
.陽離子類硬化劑:三氟化硼乙胺(Stella-Chemifa公司製造)
.溶劑:松油醇:松油醇(Yasuhara Chemical公司製造)
根據表1所示結果可知,不配伍嵌段化羧酸(D)而調製之導電性組成物與透明導電層之密著性較差(比較例1)。
又,不配伍陽離子類硬化劑(C)而調製之比較例2的導電性組成物不會硬化,不配伍陽離子類硬化劑(C)且增加嵌段化羧酸(D)之配伍量而調製之比較例3的導
電性組成物,其所形成之集電電極之接觸電阻變高,不耐用。
與此相對,配伍有陽離子類硬化劑(C)及嵌段化羧酸(D)之導電性組成物,其所形成之集電電極之接觸電阻均變低,且與透明導電層之密著性良好(實施例1~9)。
尤其是,根據實施例4~6之對比可知,若生成嵌段化羧酸(D)所使用之聚羧酸的碳原子數為奇數,則與透明導電層之密著性更加良好。
又,根據實施例4~6及9之對比可知,若生成嵌段化羧酸(D)所使用之聚羧酸的碳原子數為3~9,則與透明導電層之密著性更加良好。
Claims (8)
- 一種太陽能電池集電電極形成用導電性組成物,其含有金屬粉末(A)、環氧樹脂(B)、陽離子類硬化劑(C)以及嵌段化羧酸(D),上述嵌段化羧酸(D)係使選自羧酸及羧酸酐之化合物(d1)與乙烯基醚化合物(d2)反應而獲得之化合物,相對於上述金屬粉末(A)100質量份,上述嵌段化羧酸(D)之含量為0.05~5質量份。
- 如申請專利範圍第1項之太陽能電池集電電極形成用導電性組成物,其中,上述金屬粉末(A)同時使用球狀金屬粉末(A1)與片狀金屬粉末(A2),該等之質量比(A1:A2)為70:30~30:70。
- 如申請專利範圍第1項之太陽能電池集電電極形成用導電性組成物,其中,上述嵌段化羧酸(D)係使二羧酸與二乙烯基醚化合物進行加成聚合而獲得之聚合物型嵌段化羧酸。
- 如申請專利範圍第1項之太陽能電池集電電極形成用導電性組成物,其中,上述化合物(d1)之碳原子數為3~9。
- 如申請專利範圍第1項之太陽能電池集電電極形成用導電性組成物,其中,上述化合物(d1)之碳原子數為3、5、7及9中的任一個。
- 如申請專利範圍第1項之太陽能電池集電電極形成用導電性組成物,其中,上述化合物(d1)係選自由丙 二酸、戊二酸、庚二酸及壬二酸所組成之群組中之至少一種二羧酸。
- 一種太陽能電池單元,其具備集電電極及作為上述集電電極之基底層之透明導電層,上述集電電極使用申請專利範圍第1至6項中任一項之太陽能電池集電電極形成用導電性組成物而形成。
- 一種太陽能電池模組,其使用申請專利範圍第7項之太陽能電池單元。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004355933A (ja) * | 2003-05-28 | 2004-12-16 | Nof Corp | 導電性ペースト、配線板の製造方法および配線板 |
| TW200920798A (en) * | 2007-10-31 | 2009-05-16 | Air Prod & Chem | Film forming additive formulations of conductive polymers |
| CN103594141A (zh) * | 2012-08-17 | 2014-02-19 | 横滨橡胶株式会社 | 太阳能电池集电极形成用导电性组合物和太阳能电池单元 |
| TW201413740A (zh) * | 2012-07-18 | 2014-04-01 | Yokohama Rubber Co Ltd | 導電性組成物及太陽能電池單元 |
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| JP5045803B2 (ja) * | 2010-09-29 | 2012-10-10 | 横浜ゴム株式会社 | 導電性組成物および太陽電池セル |
| JP2012164772A (ja) * | 2011-02-04 | 2012-08-30 | E I Du Pont De Nemours & Co | 太陽電池電極作製用光硬化性導電ペースト、該ペーストを用いた太陽電池電極の作製方法及び該ペーストを用いて作製された太陽電池電極 |
| US8502067B2 (en) * | 2011-09-20 | 2013-08-06 | E. I. Du Pont De Nemours And Company | Method of manufacturing solar cell electrode and conductive paste |
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| TW200920798A (en) * | 2007-10-31 | 2009-05-16 | Air Prod & Chem | Film forming additive formulations of conductive polymers |
| TW201413740A (zh) * | 2012-07-18 | 2014-04-01 | Yokohama Rubber Co Ltd | 導電性組成物及太陽能電池單元 |
| CN103594141A (zh) * | 2012-08-17 | 2014-02-19 | 横滨橡胶株式会社 | 太阳能电池集电极形成用导电性组合物和太阳能电池单元 |
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