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TWI673550B - Transflective display panel and pixel structure thereof - Google Patents

Transflective display panel and pixel structure thereof Download PDF

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Publication number
TWI673550B
TWI673550B TW107129639A TW107129639A TWI673550B TW I673550 B TWI673550 B TW I673550B TW 107129639 A TW107129639 A TW 107129639A TW 107129639 A TW107129639 A TW 107129639A TW I673550 B TWI673550 B TW I673550B
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transparent
bump
light
insulating layer
pixel structure
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TW107129639A
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Chinese (zh)
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TW202009575A (en
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周昱恆
陳培銘
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友達光電股份有限公司
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Priority to TW107129639A priority Critical patent/TWI673550B/en
Priority to CN201811326254.7A priority patent/CN109164617A/en
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Publication of TW202009575A publication Critical patent/TW202009575A/en

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553Reflecting elements
    • G02F1/133555Transflectors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553Reflecting elements
    • G02F1/133555Transflectors
    • G02F1/133557Half-mirrors

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一種畫素結構包括開關電路、畫素電極、絕緣層、透明保護層以及至少一透明凸塊。畫素電極電連接開關電路,並具有反光部以及透光部,其中反光部鄰接於透光部。絕緣層覆蓋開關電路,並位於畫素電極與開關電路之間。透明保護層位於絕緣層與畫素電極之間,並具有第一區塊與第二區塊。反光部覆蓋第一區塊,而透光部覆蓋第二區塊。反光部與絕緣層之間的距離大於透光部與絕緣層之間的距離。透明凸塊形成絕緣層上,並被透明保護層所包覆,其中反光部與透明凸塊重疊。此外,一種包括以上畫素結構的半穿反顯示面板在此提出。A pixel structure includes a switching circuit, a pixel electrode, an insulating layer, a transparent protective layer, and at least one transparent bump. The pixel electrode is electrically connected to the switch circuit, and has a light reflecting portion and a light transmitting portion, wherein the light reflecting portion is adjacent to the light transmitting portion. The insulating layer covers the switching circuit and is located between the pixel electrode and the switching circuit. The transparent protective layer is located between the insulating layer and the pixel electrode, and has a first block and a second block. The light reflecting portion covers the first block, and the light transmitting portion covers the second block. The distance between the light reflecting portion and the insulating layer is greater than the distance between the light transmitting portion and the insulating layer. The transparent bump is formed on the insulating layer and is covered by a transparent protective layer, wherein the light reflecting portion overlaps the transparent bump. In addition, a transflective display panel including the above pixel structure is proposed here.

Description

半穿反顯示面板及其畫素結構Semi-transparent display panel and its pixel structure

本發明是有關於一種顯示器,且特別是關於一種半穿反顯示面板及其畫素結構。The invention relates to a display, and more particularly to a transflective display panel and a pixel structure thereof.

現今許多行動裝置(mobile device),例如智慧手機及平板電腦,採用半穿反顯示面板來做為顯示螢幕,而目前的半穿反顯示面板大多具有多個透光部以及多個反光部。當顯示器的內部光源,例如背光模組(backlight module),發出光線時,此光線能從這些透光部穿透半穿反顯示面板來顯示影像。當外界光線,例如太陽光(sunlight),照射於半穿反顯示面板的顯示區時,外界光線會被這些反光部反射而同樣能顯示影像。因此,半穿反顯示面板能以利用內部光源(例如背光模組)與外界光線(例如太陽光)來顯示影像。Many mobile devices today, such as smart phones and tablet computers, use transflective display panels as display screens, while most current transflective display panels have multiple light transmitting sections and multiple reflective sections. When the internal light source of the display, such as a backlight module, emits light, the light can penetrate the transflective display panel from these light-transmitting portions to display an image. When external light, such as sunlight, shines on the display area of the transflective display panel, the external light will be reflected by these reflective parts and can also display images. Therefore, the transflective display panel can use an internal light source (such as a backlight module) and external light (such as sunlight) to display an image.

然而,反光部具有不透光的反光層,而反光層不僅能反射外界光線,而且也能反射來自內部光源的光線,所以這些反光部會遮擋(blocking)內部光源所發出的部分光線,導致內部光源的光利用率(ight utilization rate)降低。因此,當半穿反顯示面板使用於昏暗環境(例如夜晚的郊區以及光線不足的室內環境)時,內部光源可能需要提供較強的光線給半穿反顯示面板,以顯示足夠亮度的影像供使用者觀看。However, the reflective part has an opaque reflective layer, and the reflective layer can not only reflect external light, but also reflect light from the internal light source, so these reflective parts will block part of the light emitted by the internal light source, resulting in internal The light utilization rate of the light source is reduced. Therefore, when the transflective display panel is used in a dim environment (such as suburbs at night and indoor environments with insufficient light), the internal light source may need to provide strong light to the transflective display panel to display a sufficiently bright image for use. Watch.

本發明至少一實施例提供一種畫素結構,其包括至少一個與反光部重疊的透明凸塊,其中此透明凸塊能幫助增加內部光源的光利用率。At least one embodiment of the present invention provides a pixel structure, which includes at least one transparent bump overlapping the reflective portion, wherein the transparent bump can help increase the light utilization efficiency of the internal light source.

本發明至少一實施例提供一種半穿反顯示面板,其包括上述透明凸塊。At least one embodiment of the present invention provides a transflective display panel including the above-mentioned transparent bumps.

本發明至少一實施例所提供的畫素結構包括開關電路、畫素電極、絕緣層、透明保護層(transparent passivation layer)以及至少一透明凸塊。畫素電極電連接開關電路,並具有反光部以及透光部,其中反光部鄰接於透光部。絕緣層覆蓋開關電路,並位於畫素電極與開關電路之間。透明保護層位於絕緣層與畫素電極之間,並具有彼此相連的第一區塊與第二區塊,其中反光部覆蓋第一區塊,而透光部覆蓋第二區塊。反光部與絕緣層之間的距離大於透光部與絕緣層之間的距離。透明凸塊形成絕緣層上,並且被透明保護層所包覆,其中反光部與透明凸塊重疊。The pixel structure provided by at least one embodiment of the present invention includes a switching circuit, a pixel electrode, an insulating layer, a transparent passivation layer, and at least one transparent bump. The pixel electrode is electrically connected to the switch circuit, and has a light reflecting portion and a light transmitting portion, wherein the light reflecting portion is adjacent to the light transmitting portion. The insulating layer covers the switching circuit and is located between the pixel electrode and the switching circuit. The transparent protective layer is located between the insulating layer and the pixel electrode, and has a first block and a second block connected to each other, wherein the light reflecting portion covers the first block and the light transmitting portion covers the second block. The distance between the light reflecting portion and the insulating layer is greater than the distance between the light transmitting portion and the insulating layer. The transparent bump is formed on the insulating layer and is covered by a transparent protective layer, wherein the light reflecting portion overlaps the transparent bump.

在本發明至少一實施例中,上述透明凸塊位於反光部以及透光部之間的交界處(boundary)。In at least one embodiment of the present invention, the transparent bump is located at a boundary between the light reflecting portion and the light transmitting portion.

在本發明至少一實施例中,上述透明凸塊的數量為多個,而多個透明凸塊沿著反光部的邊緣而排列。In at least one embodiment of the present invention, the number of the transparent bumps is plural, and the plurality of transparent bumps are arranged along the edge of the reflective portion.

在本發明至少一實施例中,多個透明凸塊沿著反光部與透光部之間的交界處排列。In at least one embodiment of the present invention, the plurality of transparent bumps are arranged along a boundary between the light reflecting portion and the light transmitting portion.

在本發明至少一實施例中,上述透明凸塊的數量為多個,而這些透明凸塊位於反光部與絕緣層之間。In at least one embodiment of the present invention, the number of the transparent bumps is multiple, and the transparent bumps are located between the light reflecting portion and the insulating layer.

在本發明至少一實施例中,這些透明凸塊呈規則排列。In at least one embodiment of the present invention, the transparent bumps are arranged regularly.

在本發明至少一實施例中,這些透明凸塊呈不規則排列。In at least one embodiment of the present invention, the transparent bumps are arranged irregularly.

在本發明至少一實施例中,上述透明凸塊的頂端具有拋物凸面。In at least one embodiment of the present invention, a top end of the transparent bump has a parabolic convex surface.

在本發明至少一實施例中,上述透明凸塊在拋物凸面處的寬度介於1.1微米(μm)至2微米之間。In at least one embodiment of the present invention, the width of the transparent bump at the parabolic convex surface is between 1.1 micrometers (μm) and 2 micrometers.

在本發明至少一實施例中,上述透明凸塊的高度介於0.5微米至3微米之間。In at least one embodiment of the present invention, the height of the transparent bump is between 0.5 μm and 3 μm.

在本發明至少一實施例中,上述透明凸塊的數量為多個,且這些透明凸塊彼此相連。In at least one embodiment of the present invention, the number of the transparent bumps is multiple, and the transparent bumps are connected to each other.

在本發明至少一實施例中,上述透明凸塊的數量為多個,且這些透明凸塊彼此分離。In at least one embodiment of the present invention, the number of the transparent bumps is plural, and the transparent bumps are separated from each other.

在本發明至少一實施例中,上述透明凸塊的折射率小於透明保護層的折射率。In at least one embodiment of the present invention, a refractive index of the transparent bump is smaller than a refractive index of the transparent protective layer.

在本發明至少一實施例中,上述開關電路包括掃描線、資料線以及開關元件。資料線與掃描線交錯。開關元件電連接掃描線、資料線以及畫素電極。In at least one embodiment of the present invention, the switch circuit includes a scan line, a data line, and a switching element. The data lines are interlaced with the scan lines. The switching element is electrically connected to the scanning line, the data line, and the pixel electrode.

在本發明至少一實施例中,上述畫素電極包括金屬層與透明導電層。金屬層電連接開關元件,並位於反光部,但不位於透光部。透明導電層電連接金屬層,並覆蓋金屬層、第一區塊與第二區塊,其中透明導電層凸出於金屬層的邊緣。In at least one embodiment of the present invention, the pixel electrode includes a metal layer and a transparent conductive layer. The metal layer is electrically connected to the switching element and is located in the light reflecting portion, but not in the light transmitting portion. The transparent conductive layer is electrically connected to the metal layer and covers the metal layer, the first block, and the second block. The transparent conductive layer protrudes from the edge of the metal layer.

在本發明至少一實施例中,上述反光部具有反射面,而上述透明凸塊重疊於反射面的面積與反射面的面積之間的比值介於0.9%至1.7%之間。In at least one embodiment of the present invention, the reflective portion has a reflective surface, and a ratio between an area of the transparent bump overlapping the reflective surface and an area of the reflective surface is between 0.9% and 1.7%.

本發明至少一實施例所提供的半穿反顯示面板包括元件陣列基板、對向基板以及液態顯像層(liquid imaging layer)。元件陣列基板包括透明基板、開關陣列、多個畫素電極、絕緣層、透明保護層以及多個透明凸塊。開關陣列形成於透明基板上。這些畫素電極電連接開關陣列,其中各個畫素電極具有反光部以及透光部,而反光部鄰接於透光部。絕緣層覆蓋開關陣列,並位於這些畫素電極與開關陣列之間。透明保護層位於絕緣層與這些畫素電極之間,並具有多個彼此相連的第一區塊與第二區塊,其中這些反光部分別覆蓋這些第一區塊,而這些透光部分別覆蓋這些第二區塊。各個反光部與絕緣層之間的距離大於各個透光部與絕緣層之間的距離。這些透明凸塊形成絕緣層上,並且被透明保護層所包覆,其中這些反光部與這些透明凸塊重疊。對向基板相對於元件陣列基板,而液態顯像層配置在元件陣列基板與對向基板之間。The transflective display panel provided by at least one embodiment of the present invention includes an element array substrate, an opposite substrate, and a liquid imaging layer. The element array substrate includes a transparent substrate, a switch array, a plurality of pixel electrodes, an insulating layer, a transparent protective layer, and a plurality of transparent bumps. The switch array is formed on a transparent substrate. These pixel electrodes are electrically connected to the switch array, wherein each pixel electrode has a light reflecting portion and a light transmitting portion, and the light reflecting portion is adjacent to the light transmitting portion. The insulating layer covers the switch array and is located between the pixel electrodes and the switch array. The transparent protective layer is located between the insulating layer and the pixel electrodes, and has a plurality of first and second blocks connected to each other. The reflective portions respectively cover the first blocks, and the transparent portions respectively cover These second blocks. The distance between each light reflecting portion and the insulating layer is greater than the distance between each light transmitting portion and the insulating layer. The transparent bumps are formed on the insulating layer and are covered by a transparent protective layer, wherein the light reflecting portions overlap the transparent bumps. The opposite substrate is opposite to the element array substrate, and the liquid developing layer is disposed between the element array substrate and the opposite substrate.

在本發明至少一實施例中,上述開關陣列包括多條並列的掃描線、多條並列的資料線以及多個開關元件。這些資料線與這些掃描線交錯。這些開關元件電連接這些掃描線、這些資料線以及這些畫素電極。In at least one embodiment of the present invention, the switch array includes a plurality of parallel scan lines, a plurality of parallel data lines, and a plurality of switching elements. These data lines are interleaved with these scan lines. The switching elements are electrically connected to the scan lines, the data lines, and the pixel electrodes.

在本發明至少一實施例中,各個畫素電極包括金屬層與透明導電層。金屬層電連接其中一個開關元件,並位於反光部,但不位於透光部。透明導電層電連接金屬層,並覆蓋金屬層、第一區塊與第二區塊,其中透明導電層凸出於金屬層的邊緣。In at least one embodiment of the present invention, each pixel electrode includes a metal layer and a transparent conductive layer. The metal layer is electrically connected to one of the switching elements and is located in the reflective portion, but not in the transparent portion. The transparent conductive layer is electrically connected to the metal layer and covers the metal layer, the first block, and the second block. The transparent conductive layer protrudes from the edge of the metal layer.

基於上述,當內部光源發出光線時,本發明至少一實施例所揭露的透明凸塊能偏折原本被反光部遮擋的部分光線,以使此部分的光線能穿透半穿反顯示面板。因此,透明凸塊能幫助內部光源所發出的部分光線不被反光部所遮擋,提升內部光源的光利用率。Based on the above, when the internal light source emits light, the transparent bumps disclosed in at least one embodiment of the present invention can deflect a part of the light originally blocked by the reflective portion, so that the light of this portion can penetrate the transflective display panel. Therefore, the transparent bump can help part of the light emitted by the internal light source not be blocked by the reflective portion, and improve the light utilization efficiency of the internal light source.

為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are described below in detail with reference to the accompanying drawings, as follows.

圖1A是根據本發明至少一實施例所繪製的半穿反顯示器的剖面示意圖。請參閱圖1A,半穿反顯示器10包括內部光源11以及半穿反顯示面板100,其中內部光源11可為背光模組,而內部光源11的發光源可以是冷陰極螢光燈管(Cold Cathode Fluorescent Lamp,CCFL)或發光二極體(Light Emitting Diode,LED)。內部光源11能朝向半穿反顯示面板100發出多條光線L1,而部分光線L1能穿透半穿反顯示面板100,並從半穿反顯示面板100的顯示面101出射。FIG. 1A is a schematic cross-sectional view of a transflective display according to at least one embodiment of the present invention. 1A, a transflective display 10 includes an internal light source 11 and a transflective display panel 100. The internal light source 11 may be a backlight module, and the light source of the internal light source 11 may be a cold cathode fluorescent lamp (Cold Cathode). Fluorescent Lamp (CCFL) or Light Emitting Diode (LED). The internal light source 11 can emit a plurality of light rays L1 toward the transflective display panel 100, and a part of the light rays L1 can penetrate the transflective display panel 100 and exit from the display surface 101 of the transflective display panel 100.

半穿反顯示面板100包括元件陣列基板200、對向基板120與液態顯像層140,其中對向基板120相對於元件陣列基板200,而液態顯像層140配置在元件陣列基板200與對向基板120之間。對向基板120例如是彩色濾光基板(color filters substrater),而液態顯像層140例如是液晶層,其含有多個液晶分子141。元件陣列基板200能產生電場,以驅動液晶分子141偏轉,從而控制顯示面101各個畫素的灰階(grey level),讓半穿反顯示面板100能顯示影像於顯示面101。The transflective display panel 100 includes an element array substrate 200, an opposite substrate 120, and a liquid imaging layer 140. The opposite substrate 120 is opposite to the element array substrate 200, and the liquid imaging layer 140 is disposed between the element array substrate 200 and the opposite. Between the substrates 120. The opposite substrate 120 is, for example, a color filters substrate, and the liquid-state imaging layer 140 is, for example, a liquid crystal layer, which includes a plurality of liquid crystal molecules 141. The element array substrate 200 can generate an electric field to drive the liquid crystal molecules 141 to deflect, thereby controlling the gray level of each pixel of the display surface 101, so that the transflective display panel 100 can display an image on the display surface 101.

圖1B是圖1A中的元件陣列基板的佈線示意圖,其中圖1A所示的元件陣列基板200是沿著圖1B中的線1A-1A剖面所繪製而成。請參閱圖1A與圖1B,元件陣列基板200包括多個畫素電極220以及開關陣列230,其中這些畫素電極220電連接開關陣列230。開關陣列230包括多個開關元件232、多條並列的掃描線233s以及多條並列的資料線233d,其中這些資料線233d與這些掃描線233s交錯,而這些開關元件232電連接這些掃描線233s、這些資料線233d以及這些畫素電極220。這些掃描線233s能開啟及關閉這些開關元件232,以使這些資料線233d所傳送的畫素電壓能經由開關元件232輸入至這些畫素電極220。如此,這些畫素電極220能產生電場,以驅動液晶分子141偏轉。FIG. 1B is a schematic wiring diagram of the element array substrate in FIG. 1A, and the element array substrate 200 shown in FIG. 1A is drawn along a line 1A-1A section in FIG. 1B. Referring to FIGS. 1A and 1B, the element array substrate 200 includes a plurality of pixel electrodes 220 and a switch array 230. The pixel electrodes 220 are electrically connected to the switch array 230. The switch array 230 includes a plurality of switching elements 232, a plurality of parallel scanning lines 233s, and a plurality of parallel data lines 233d. The data lines 233d are interleaved with the scanning lines 233s. The switching elements 232 are electrically connected to the scanning lines 233s, The data lines 233d and the pixel electrodes 220. The scanning lines 233s can turn on and off the switching elements 232, so that the pixel voltage transmitted by the data lines 233d can be input to the pixel electrodes 220 through the switching elements 232. In this way, the pixel electrodes 220 can generate an electric field to drive the liquid crystal molecules 141 to deflect.

在圖1A與圖1B所示的實施例中,各個開關元件232可為薄膜電晶體(Thin-Film Transistor,TFT),並包括閘極23g、源極23s、汲極23d以及通道層23c。通道層23c為半導體層,並連接源極23s與汲極23d。閘極23g連接掃描線233s,而源極23s連接資料線233d。汲極23d連接畫素電極220,且汲極23d可利用接觸窗(contact window)W1來連接畫素電極220,以使汲極23d與畫素電極220能彼此電性導通。元件陣列基板200還包括閘極絕緣層(gate-insulating layer)260,其覆蓋閘極23g,其中閘極絕緣層260可由氧化矽或氮化矽製成。閘極絕緣層260位於閘極23g與通道層23c之間,以使閘極23g與通道層23c彼此電性絕緣,從而形成電容結構。In the embodiment shown in FIGS. 1A and 1B, each switching element 232 may be a thin-film transistor (TFT), and includes a gate electrode 23g, a source electrode 23s, a drain electrode 23d, and a channel layer 23c. The channel layer 23c is a semiconductor layer, and connects the source electrode 23s and the drain electrode 23d. The gate electrode 23g is connected to the scanning line 233s, and the source electrode 23s is connected to the data line 233d. The drain electrode 23d is connected to the pixel electrode 220, and the drain electrode 23d can be connected to the pixel electrode 220 by using a contact window W1, so that the drain electrode 23d and the pixel electrode 220 can be electrically connected to each other. The element array substrate 200 further includes a gate-insulating layer 260 covering the gate electrode 23g. The gate-insulating layer 260 may be made of silicon oxide or silicon nitride. The gate insulating layer 260 is located between the gate 23g and the channel layer 23c, so that the gate 23g and the channel layer 23c are electrically insulated from each other, thereby forming a capacitor structure.

當從掃描線233s輸入電壓至閘極23g時,閘極23g與通道層23c之間會產生電場效應(field effect),以使源極23s與汲極23d能經由通道層23c而能彼此電性導通。如此,資料線233d所傳送的畫素電壓能依序經由源極23s、通道層23c與汲極23d輸入至畫素電極220,以產生驅動液晶分子141偏轉的電場。此外,元件陣列基板200可以還包括多條並列的共用線280,其中這些共用線280能輸入共用電壓,而這些共用線280的走向可相同於這些掃描線233s的走向。各條共用線280具有至少兩種不同寬度的區段,其中寬度較寬的區段為延伸部281,而多個延伸部281分別與這些畫素電極220的部分重疊,如圖1B所示。When a voltage is input from the scanning line 233s to the gate electrode 23g, a field effect is generated between the gate electrode 23g and the channel layer 23c, so that the source electrode 23s and the drain electrode 23d can be electrically connected to each other through the channel layer 23c. Continuity. In this way, the pixel voltage transmitted by the data line 233d can be sequentially input to the pixel electrode 220 through the source electrode 23s, the channel layer 23c, and the drain electrode 23d to generate an electric field that drives the liquid crystal molecules 141 to deflect. In addition, the element array substrate 200 may further include a plurality of parallel common lines 280, wherein the common lines 280 can input a common voltage, and the common lines 280 may have the same orientation as the scan lines 233s. Each common line 280 has at least two sections with different widths. Among them, the wider section is an extension 281, and a plurality of extensions 281 overlap with the pixel electrodes 220, as shown in FIG. 1B.

須說明的是,雖然在圖1A與圖1B所示的實施例中,各個開關元件232為薄膜電晶體,即開關元件232為主動元件(active component),但是在其他實施例中,開關元件232也可以是被動元件(passtive component),例如二極體。因此,在此強調,這些開關元件232也可為被動元件(例如二極體),不限定只能是主動元件(例如薄膜電晶體)。此外,當開關元件232為被動元件時,對向基板120可以是無色的透明基板,例如無彩色濾光片的透明玻璃板。It should be noted that although in the embodiments shown in FIG. 1A and FIG. 1B, each switching element 232 is a thin film transistor, that is, the switching element 232 is an active component, but in other embodiments, the switching element 232 It can also be a passive component, such as a diode. Therefore, it is emphasized here that these switching elements 232 can also be passive elements (such as diodes), and are not limited to being only active elements (such as thin film transistors). In addition, when the switching element 232 is a passive element, the opposite substrate 120 may be a colorless transparent substrate, such as a transparent glass plate without a color filter.

元件陣列基板200還包括透明基板210、透明保護層240以及絕緣層250,其中透明基板210例如是玻璃板。透明保護層240可由光阻(photoresist)製成,而絕緣層250的可由氧化矽或氮化矽所製成。開關陣列230、透明保護層240與絕緣層250皆形成在透明基板210上,而絕緣層250覆蓋開關陣列230,並位於這些畫素電極220與開關陣列230之間。所以,開關元件232、掃描線233s以及資料線233d皆被絕緣層250所覆蓋。透明保護層240位於絕緣層250與畫素電極220之間,並具有彼此相連的第一區塊241與第二區塊242,其中第一區塊241的厚度大於第二區塊242的厚度,且第一區塊241凸出於第二區塊242的上表面,如圖1A所示。由於透明保護層240可為光阻,因此厚度不同的第一區塊241與第二區塊242可用光刻(photolithography)來形成。The element array substrate 200 further includes a transparent substrate 210, a transparent protective layer 240, and an insulating layer 250. The transparent substrate 210 is, for example, a glass plate. The transparent protective layer 240 may be made of photoresist, and the insulating layer 250 may be made of silicon oxide or silicon nitride. The switch array 230, the transparent protective layer 240, and the insulating layer 250 are all formed on the transparent substrate 210, and the insulating layer 250 covers the switch array 230 and is located between these pixel electrodes 220 and the switch array 230. Therefore, the switching element 232, the scanning lines 233s, and the data lines 233d are all covered by the insulating layer 250. The transparent protective layer 240 is located between the insulating layer 250 and the pixel electrode 220 and has a first block 241 and a second block 242 connected to each other. The thickness of the first block 241 is greater than the thickness of the second block 242. And the first block 241 protrudes from the upper surface of the second block 242, as shown in FIG. 1A. Since the transparent protective layer 240 may be a photoresist, the first blocks 241 and the second blocks 242 having different thicknesses may be formed by photolithography.

各個畫素電極220可以被劃分成兩部分。具體而言,各個畫素電極220具有反光部220f與透光部220t,其中反光部220f鄰接於透光部220t。反光部220f覆蓋第一區塊241,而透光部220t覆蓋第二區塊242。由於第一區塊241的厚度大於第二區塊242的厚度,因此反光部220f與絕緣層250之間的距離大於透光部220t與絕緣層250之間的距離,如圖1A所示。各個畫素電極220包括透明導電層221與金屬層222,其中透明導電層221可由透明導電氧化物(Transparent Conducting. Oxides,TCO)製成,而透明導電氧化物例如是氧化銦錫(Indium Tin Oxide,ITO)或氧化銦鋅(Indium Zinc Oxide,IZO)。Each pixel electrode 220 may be divided into two parts. Specifically, each pixel electrode 220 has a light reflecting portion 220f and a light transmitting portion 220t, and the light reflecting portion 220f is adjacent to the light transmitting portion 220t. The light reflecting portion 220f covers the first block 241, and the light transmitting portion 220t covers the second block 242. Since the thickness of the first block 241 is greater than the thickness of the second block 242, the distance between the light reflecting portion 220f and the insulating layer 250 is greater than the distance between the light transmitting portion 220t and the insulating layer 250, as shown in FIG. 1A. Each pixel electrode 220 includes a transparent conductive layer 221 and a metal layer 222. The transparent conductive layer 221 may be made of transparent conductive oxide (Transparent Conducting. Oxides, TCO), and the transparent conductive oxide is, for example, indium tin oxide (Indium Tin Oxide). , ITO) or Indium Zinc Oxide (IZO).

金屬層222因具有高反射率而能反射光線,其中金屬層222例如是鋁金屬層或銀金屬層。因此,各個反光部220f具有反射面222a,其可以是圖1A所示的金屬層222的上表面。透明導電層221電連接金屬層222,而金屬層222電連接其中一個開關元件232的汲極23d,因此開關元件232能經由金屬層222而電連接透明導電層221。此外,在同一個畫素電極220中,透明導電層221覆蓋金屬層222以及透明保護層240的第一區塊241與第二區塊242,而金屬層222僅覆蓋第一區塊241,但不覆蓋第二區塊242。也就是說,金屬層222位於反光部220f,但不位於透光部220t,所以透明導電層221會凸出於金屬層222的邊緣。因此,在圖1A所示的實施例中,透光部220t是由透明保護層240的一部分所形成,而反光部220f是由透明保護層240的其他部分以及金屬層222所形成。The metal layer 222 can reflect light due to its high reflectivity. The metal layer 222 is, for example, an aluminum metal layer or a silver metal layer. Therefore, each light reflecting portion 220f has a reflective surface 222a, which may be the upper surface of the metal layer 222 shown in FIG. 1A. The transparent conductive layer 221 is electrically connected to the metal layer 222, and the metal layer 222 is electrically connected to the drain electrode 23d of one of the switching elements 232. Therefore, the switching element 232 can be electrically connected to the transparent conductive layer 221 through the metal layer 222. In addition, in the same pixel electrode 220, the transparent conductive layer 221 covers the first and second blocks 241 and 242 of the metal layer 222 and the transparent protective layer 240, and the metal layer 222 only covers the first block 241, but The second block 242 is not covered. That is, the metal layer 222 is located on the light reflecting portion 220f, but not on the light transmitting portion 220t, so the transparent conductive layer 221 will protrude from the edge of the metal layer 222. Therefore, in the embodiment shown in FIG. 1A, the light transmitting portion 220 t is formed by a part of the transparent protective layer 240, and the light reflecting portion 220 f is formed by other portions of the transparent protective layer 240 and the metal layer 222.

元件陣列基板200還包括多個透明凸塊270。這些透明凸塊270形成於絕緣層250上,並且被透明保護層240包覆。在圖1A與圖1B所示的實施例中,同一個畫素電極220中的多個透明凸塊270位於反光部220f與透光部220t之間的交界處,其中這些透明凸塊270可沿著反光部220f與透光部220t之間的交界處排列。反光部220f與透明凸塊270重疊。以圖1A與圖1B為例,在同一個畫素電極220中,反光部220f與各個透明凸塊270部分重疊,即單一個反光部220f的金屬層222遮蔽各個透明凸塊270的一部分。此外,這些透明凸塊270重疊於這些反射面222a的面積與這些反射面222a的面積之間的比值介於0.9%至1.7%之間。The element array substrate 200 further includes a plurality of transparent bumps 270. These transparent bumps 270 are formed on the insulating layer 250 and are covered with a transparent protective layer 240. In the embodiment shown in FIG. 1A and FIG. 1B, a plurality of transparent bumps 270 in the same pixel electrode 220 are located at the boundary between the reflective portion 220f and the transparent portion 220t. The transparent bumps 270 may be along the Arranged at the boundary between the reflective portion 220f and the transparent portion 220t. The light reflecting portion 220f overlaps the transparent bump 270. Taking FIG. 1A and FIG. 1B as an example, in the same pixel electrode 220, the light reflecting portion 220f partially overlaps each transparent bump 270, that is, the metal layer 222 of a single light reflecting portion 220f covers a part of each transparent bump 270. In addition, a ratio between an area of the transparent bumps 270 overlapping the reflective surfaces 222 a and an area of the reflective surfaces 222 a is between 0.9% and 1.7%.

圖1C是沿圖1B中的線1C-1C剖面所繪製的剖面示意圖。請參閱圖1A與圖1C,跟透明保護層240一樣,透明凸塊270也可由光阻製成,所以透明凸塊270也可用光刻來形成。不過,各個透明凸塊270的折射率不同於透明保護層240的折射率,所以透明凸塊270與透明保護層240兩者的成分並不完全相同。此外,各個透明凸塊270的頂端具有拋物凸面272,而透明保護層240覆蓋並接觸拋物凸面272。當透明凸塊270內的光線L1從拋物凸面272出射時,原本朝向金屬層222入射的光線L1因折射而偏折(deflecting),而此偏折的光線L1不會入射於金屬層222,並且依序穿透液態顯像層140與對向基板120,從顯示面101出射,如同圖1A中從左邊數過來第二條光線L1。FIG. 1C is a schematic cross-sectional view taken along a line 1C-1C in FIG. 1B. Please refer to FIG. 1A and FIG. 1C. Like the transparent protective layer 240, the transparent bump 270 can also be made of photoresist, so the transparent bump 270 can also be formed by photolithography. However, the refractive index of each transparent bump 270 is different from the refractive index of the transparent protective layer 240, so the components of the transparent bump 270 and the transparent protective layer 240 are not completely the same. In addition, the top of each transparent bump 270 has a parabolic convex surface 272, and the transparent protective layer 240 covers and contacts the parabolic convex surface 272. When the light ray L1 in the transparent bump 270 exits from the parabolic convex surface 272, the light ray L1 originally entering the metal layer 222 is deflected due to refraction, and the deflected light ray L1 does not enter the metal layer 222, and The liquid imaging layer 140 and the opposite substrate 120 are sequentially penetrated and emitted from the display surface 101, as in FIG. 1A, the second light ray L1 is counted from the left side.

由此可知,透明凸塊270能偏折原本被反光部220f遮擋的部分光線L1,並讓這部分的光線L1依序穿透液態顯像層140與對向基板120,從顯示面101出射,以使透明凸塊270能減少被反光部220f所遮擋的光線L1,並增加穿透半穿反顯示面板100的光線L1,進而提升內部光源11的光利用率。如此,在半穿反顯示器10使用於昏暗環境(例如夜晚的郊區以及光線不足的室內環境)的情況下,相較於現有的半穿反顯示面板,內部光源11可提供較低強度的光線,即能顯示足夠亮度的影像供使用者觀看,進而有助於降低內部光源11的消耗功率。It can be seen that the transparent bump 270 can deflect a part of the light L1 that was originally blocked by the reflective portion 220f, and let this part of the light L1 sequentially penetrate the liquid imaging layer 140 and the opposite substrate 120, and exit from the display surface 101. In this way, the transparent bump 270 can reduce the light L1 blocked by the reflective portion 220f, and increase the light L1 penetrating through the transflective display panel 100, thereby improving the light utilization rate of the internal light source 11. In this way, when the transflective display 10 is used in a dim environment (such as a suburb at night and an indoor environment with insufficient light), compared with the existing transflective display panel, the internal light source 11 can provide lower intensity light. That is, an image with sufficient brightness can be displayed for the user to watch, thereby helping to reduce the power consumption of the internal light source 11.

請參閱圖1C,在本實施例中,各個透明凸塊270在拋物凸面272處的寬度W27可介於1.1微米至2微米之間,而各個透明凸塊270的高度H27可介於0.5微米至3微米之間,其中相鄰兩個透明凸塊270中心線271之間的間距P27可介於1.1微米至2微米之間。不過,前述寬度W27、高度H27與間距P27三者範圍僅為一種實施例,非限定本發明。另外,各個透明凸塊270的折射率可小於透明保護層240的折射率,而同一個畫素電極220中的這些透明凸塊270可彼此相連。Please refer to FIG. 1C. In this embodiment, the width W27 of each transparent bump 270 at the parabolic convex surface 272 may be between 1.1 microns and 2 microns, and the height H27 of each transparent bump 270 may be between 0.5 microns and The distance P27 between the two adjacent transparent bumps 270 center line 271 may be between 3 microns, and the interval P27 may be between 1.1 microns and 2 microns. However, the foregoing ranges of the width W27, the height H27, and the pitch P27 are only one embodiment, and do not limit the present invention. In addition, the refractive index of each transparent bump 270 may be smaller than the refractive index of the transparent protective layer 240, and the transparent bumps 270 in the same pixel electrode 220 may be connected to each other.

以下(表一)是以程式模擬量測當半穿反顯示面板100在採用不同透明凸塊270時的穿透率(transmittance),其中(表一)的模擬條件包括:拋物凸面272的曲率半徑為0.3微米;透明保護層240的折射率為1.7;以及同一個畫素電極220中的寬度W27皆為2微米。作為對照組的半穿反顯示面板(也就是沒有透明凸塊270的半穿反顯示面板100)經模擬量測後所得到的穿透率為42%。另外,上述程式是依據馬克士威方程組(Maxwell's equations)來進行模擬。 (表一) 透明凸塊270的折射率 高度H27(微米) 1.2 1.65 2.1 2.55 3 0.5 44.53 44.17 42.60 42.84 42.46 1.125 44.63 44.16 40.74 41.20 40.96 1.75 43.66 43.87 39.87 40.00 39.68 2.375 42.76 43.37 39.45 38.90 38.50 3 42.57 43.46 39.20 38.81 38.27 The following (Table 1) is a program simulation to measure the transmittance of the transflective display panel 100 when different transparent bumps 270 are used. The simulation conditions of (Table 1) include the curvature radius of the parabolic convex surface 272. 0.3 μm; the refractive index of the transparent protective layer 240 is 1.7; and the width W27 in the same pixel electrode 220 is 2 μm. As a control group, the transflective display panel (ie, the transflective display panel 100 without the transparent bumps 270) has a transmittance of 42% after analog measurement. In addition, the above program is simulated based on Maxwell's equations. (Table I) Refractive index of transparent bump 270 Height H27 (micron) 1.2 1.65 2.1 2.55 3 0.5 44.53 44.17 42.60 42.84 42.46 1.125 44.63 44.16 40.74 41.20 40.96 1.75 43.66 43.87 39.87 40.00 39.68 2.375 42.76 43.37 39.45 38.90 38.50 3 42.57 43.46 39.20 38.81 38.27

從(表一)可以看出,當透明凸塊270的折射率小於透明保護層240的折射率(1.7)時,半穿反顯示面板100能得到大於42%(對照組)的穿透率。因此,(表一)所揭露的一些透明凸塊270確實有助於提升半穿反顯示面板100的穿透率。另外,在透明凸塊270的高度H27為0.5微米(即500奈米)的條件下,即使透明凸塊270的折射率大於透明保護層240的折射率,半穿反顯示面板100的穿透率也能大於42%。由於0.5微米已在可見光的波長範圍(約在390奈米至700奈米之間),因此高度H27為0.5微米的透明凸塊270會產生繞射(diffraction),而透明凸塊270可能是利用此繞射的效應來增加半穿反顯示面板100的穿透率。It can be seen from (Table 1) that when the refractive index of the transparent bump 270 is smaller than the refractive index (1.7) of the transparent protective layer 240, the transflective display panel 100 can obtain a transmittance greater than 42% (control group). Therefore, some of the transparent bumps 270 disclosed in (Table 1) do help to improve the transmittance of the transflective display panel 100. In addition, under the condition that the height H27 of the transparent bump 270 is 0.5 micrometers (that is, 500 nanometers), even if the refractive index of the transparent bump 270 is greater than the refractive index of the transparent protective layer 240, the transmissivity of the transflective display panel 100 is half. Can also be greater than 42%. Since 0.5 micron is already in the visible wavelength range (between about 390 nm and 700 nm), the transparent bump 270 with a height of H27 of 0.5 micron will cause diffraction, and the transparent bump 270 may be used. This diffraction effect increases the transmittance of the transflective display panel 100.

以下(表二)也是以程式模擬量測半穿反顯示面板100在採用其他不同透明凸塊270時的穿透率,其中(表二)所使用的程式相同於(表一)所使用的程式,而且與(表一)的對照組相同,(表二)的對照組穿透率也是42%。(表二)的模擬條件包括:拋物凸面272的曲率半徑為0.3微米;透明保護層240的折射率為1.7;以及同一個畫素電極220中的寬度W27皆為1.1微米。因此,不同於(表一)的模擬條件,(表二)的寬度W27比較小(1.1微米)。 (表二) 透明凸塊270的折射率 高度H27(微米) 1.2 1.65 2.1 2.55 3 0.50 43.44 42.73 39.39 39.28 38.97 1.13 41.08 43.10 38.30 38.72 38.50 1.75 40.60 43.05 38.37 38.78 38.28 2.38 40.78 42.71 38.19 38.33 38.56 3.00 40.30 42.69 37.92 38.21 38.49 The following (Table 2) also uses a program simulation to measure the transmittance of the transflective display panel 100 when using other different transparent bumps 270. The program used in (Table 2) is the same as the program used in (Table 1). And, the same as the control group (Table 1), the penetration rate of the control group (Table 2) is also 42%. (Table 2) The simulation conditions include: the curvature radius of the parabolic convex surface 272 is 0.3 micrometers; the refractive index of the transparent protective layer 240 is 1.7; and the width W27 in the same pixel electrode 220 is 1.1 micrometers. Therefore, unlike the simulation conditions of (Table 1), the width W27 of (Table 2) is relatively small (1.1 micron). (Table II) Refractive index of transparent bump 270 Height H27 (micron) 1.2 1.65 2.1 2.55 3 0.50 43.44 42.73 39.39 39.28 38.97 1.13 41.08 43.10 38.30 38.72 38.50 1.75 40.60 43.05 38.37 38.78 38.28 2.38 40.78 42.71 38.19 38.33 38.56 3.00 40.30 42.69 37.92 38.21 38.49

從(表二)可以看出,當透明凸塊270的折射率小於透明保護層240的折射率(1.7)時,半穿反顯示面板100仍可以得到大於42%(對照組)的穿透率。因此,(表二)所揭露的一些透明凸塊270也確實有助於提升半穿反顯示面板100的穿透率。另外,不同於(表一)的結果,在透明凸塊270的折射率大於透明保護層240的折射率(1.7)的條件下,不論高度H27是否為0.5微米,半穿反顯示面板100的穿透率皆小於對照組的42%穿透率。It can be seen from (Table 2) that when the refractive index of the transparent bump 270 is smaller than the refractive index (1.7) of the transparent protective layer 240, the transflective display panel 100 can still obtain a transmittance greater than 42% (control group). . Therefore, some of the transparent bumps 270 disclosed in (Table 2) do help to improve the transmittance of the transflective display panel 100. In addition, different from the results of (Table 1), under the condition that the refractive index of the transparent bump 270 is greater than the refractive index (1.7) of the transparent protective layer 240, regardless of whether the height H27 is 0.5 μm, the penetration of the transflective display panel 100 is half. The transmittances were less than 42% of the control group.

請參閱圖1A與圖1B,在元件陣列基板200中,這些畫素電極220、開關陣列230、透明保護層240、絕緣層250以及多個透明凸塊270能形成多個呈陣列排列的畫素結構PX1,如圖1B所示。各個畫素結構PX1形成於透明基板210上,並包括畫素電極220、透明保護層240、絕緣層250與開關電路231,其中開關電路231為開關陣列230在單一個畫素結構PX1內的一部分。絕緣層250覆蓋開關電路231,並位於畫素電極220與開關電路231之間,而單一個開關電路231包括一個開關元件232、一條掃描線233s以及一條資料線233d,其中前述掃描線233s會與資料線233d交錯。Please refer to FIG. 1A and FIG. 1B. In the element array substrate 200, the pixel electrodes 220, the switch array 230, the transparent protective layer 240, the insulating layer 250, and the plurality of transparent bumps 270 can form multiple pixels arranged in an array. Structure PX1, as shown in Figure 1B. Each pixel structure PX1 is formed on a transparent substrate 210 and includes a pixel electrode 220, a transparent protective layer 240, an insulating layer 250, and a switching circuit 231. The switching circuit 231 is a part of the switch array 230 in a single pixel structure PX1. . The insulating layer 250 covers the switching circuit 231 and is located between the pixel electrode 220 and the switching circuit 231. A single switching circuit 231 includes a switching element 232, a scanning line 233s, and a data line 233d. The foregoing scanning lines 233s and The data lines 233d are staggered.

各個畫素結構PX1還包括至少一個透明凸塊270。在圖1B的實施例中,單一個畫素結構PX1包括多個彼此相連的透明凸塊270,但在其他實施例中,單一個畫素結構PX1也可以只包括一個透明凸塊270,所以圖1B所示的透明凸塊270僅供舉例說明,不限定一個畫素結構PX1所包括的透明凸塊270的數量。Each pixel structure PX1 further includes at least one transparent bump 270. In the embodiment of FIG. 1B, a single pixel structure PX1 includes a plurality of transparent bumps 270 connected to each other, but in other embodiments, a single pixel structure PX1 may also include only one transparent bump 270, so The transparent bumps 270 shown in FIG. 1B are for illustration only, and the number of the transparent bumps 270 included in one pixel structure PX1 is not limited.

圖2A是根據本發明至少一實施例所繪製的元件陣列基板的佈線示意圖,而圖2B是沿圖2A中的線2B-2B剖面所繪製的剖面示意圖。請參閱圖2A與圖2B,圖2A所示的元件陣列基板300與圖1B所示的元件陣列基板200相似。例如,元件陣列基板300與200兩者也包括相同的元件,像是透明基板210、透明保護層240、掃描線233s、資料線233d、畫素電極220以及條共用線280。此外,元件陣列基板300也可應用於圖1A中的半穿反顯示器10,即圖1A中的元件陣列基板200可替換成元件陣列基板300。以下僅說明元件陣列基板300不同於前述實施例的特徵。至於元件陣列基板300與200兩者相同特徵,則不再重複敘述,而且圖2A也會省略繪製一些相同的元件。FIG. 2A is a schematic wiring diagram of an element array substrate drawn according to at least one embodiment of the present invention, and FIG. 2B is a schematic cross-sectional diagram drawn along a line 2B-2B cross-section in FIG. 2A. Please refer to FIG. 2A and FIG. 2B. The device array substrate 300 shown in FIG. 2A is similar to the device array substrate 200 shown in FIG. 1B. For example, the element array substrates 300 and 200 also include the same elements, such as the transparent substrate 210, the transparent protective layer 240, the scan lines 233s, the data lines 233d, the pixel electrodes 220, and the common lines 280. In addition, the element array substrate 300 can also be applied to the transflective display 10 in FIG. 1A, that is, the element array substrate 200 in FIG. 1A can be replaced with the element array substrate 300. Only the features of the element array substrate 300 that are different from the foregoing embodiments will be described below. As for the same features of the element array substrates 300 and 200, the description will not be repeated, and FIG. 2A will also omit drawing some of the same elements.

元件陣列基板300包括多個透明凸塊370,其中透明凸塊370與270兩者製作材料與製造方法可以相同,且透明凸塊370的頂端也具有拋物凸面(未標示)。然而,不同於前述實施例中的透明凸塊270,在圖2A與圖2B所示的同一個畫素電極220中,這些透明凸塊370彼此分離,且相鄰任兩個透明凸塊370之間的間距可以彼此相等。這些透明凸塊370可沿著反光部220f的邊緣而排列,其中反光部220f的邊緣包括反光部220f與透光部220t之間的交界處,而至少一個透明凸塊370可位於反光部220f與透光部220t之間的交界處。The element array substrate 300 includes a plurality of transparent bumps 370. The transparent bumps 370 and 270 can be made of the same material and manufacturing method, and the top of the transparent bumps 370 also has a parabolic convex surface (not labeled). However, unlike the transparent bumps 270 in the foregoing embodiment, in the same pixel electrode 220 shown in FIG. 2A and FIG. 2B, these transparent bumps 370 are separated from each other, and any two of the adjacent transparent bumps 370 are adjacent to each other. The spacing between them can be equal to each other. The transparent bumps 370 may be arranged along the edge of the reflective portion 220f. The edge of the reflective portion 220f includes an interface between the reflective portion 220f and the light transmitting portion 220t. At least one transparent bump 370 may be located between the reflective portion 220f and the reflective portion 220f. The junction between the light transmitting portions 220t.

在本實施例中,同一個畫素電極220中的這些透明凸塊370是沿著反光部220f的三邊緣而呈倒U形排列,但在其他實施例中,這些彼此分離的透明凸塊370也可以沿著反光部220f的一邊緣而呈直線排列,或是只沿著反光部220f的任兩邊緣而排列。因此,圖2A所示的這些透明凸塊370排列方式並不限定本發明。此外,在其他實施例中,至少兩個透明凸塊370可以彼此相連。例如,圖2A中位於反光部220f與透光部220t之間交界處的這些透明凸塊370可以彼此相連,以形成如同圖1B所示的多個彼此相連的透明凸塊270。In this embodiment, the transparent bumps 370 in the same pixel electrode 220 are arranged in an inverted U shape along the three edges of the reflective portion 220f, but in other embodiments, the transparent bumps 370 are separated from each other. It may also be arranged linearly along one edge of the reflective portion 220f, or may be arranged along only any two edges of the reflective portion 220f. Therefore, the arrangement of the transparent bumps 370 shown in FIG. 2A does not limit the present invention. In addition, in other embodiments, at least two transparent bumps 370 may be connected to each other. For example, the transparent bumps 370 at the boundary between the light reflecting portion 220f and the light transmitting portion 220t in FIG. 2A may be connected to each other to form a plurality of transparent bumps 270 connected to each other as shown in FIG. 1B.

圖3與圖4是根據本發明至少一實施例所繪製的兩種不同的元件陣列基板的佈線示意圖,其中圖3與圖4所示的元件陣列基板400與500皆相似於前述實施例的元件陣列基板200與300,且圖1A中的元件陣列基板200可替換成元件陣列基板400或500。請先參閱圖3,不同於前述實施例,在元件陣列基板400中,同一畫素電極220中的這些透明凸塊370呈規則排列。以圖3為例,在各個畫素電極220中,這些透明凸塊370可以呈陣列排列。3 and 4 are schematic diagrams of wirings of two different element array substrates according to at least one embodiment of the present invention. The element array substrates 400 and 500 shown in FIGS. 3 and 4 are similar to the elements of the foregoing embodiment. Array substrates 200 and 300, and the element array substrate 200 in FIG. 1A may be replaced with an element array substrate 400 or 500. Please refer to FIG. 3. Unlike the foregoing embodiment, in the element array substrate 400, the transparent bumps 370 in the same pixel electrode 220 are regularly arranged. Taking FIG. 3 as an example, in each pixel electrode 220, the transparent bumps 370 may be arranged in an array.

請參閱圖4。在圖4實施例所示的元件陣列基板500,同一個畫素電極220中的這些透明凸塊370是呈不規則排列,所以透明凸塊370不限定是呈規則排列。另外,透明凸塊370的高度範圍可相同於透明凸塊270的高度H27範圍,所以透明凸塊370的高度可以是0.5微米。由於0.5微米已在可見光的波長範圍,因此高度為0.5微米的透明凸塊370會產生繞射而影響所產生的影像。呈不規則排列的透明凸塊370(如圖4所示)能削弱光干涉(optical interference),以降低繞射對影像的影響。See Figure 4. In the element array substrate 500 shown in the embodiment of FIG. 4, the transparent bumps 370 in the same pixel electrode 220 are irregularly arranged, so the transparent bumps 370 are not limited to be regularly arranged. In addition, the height range of the transparent bump 370 may be the same as the height H27 range of the transparent bump 270, so the height of the transparent bump 370 may be 0.5 micrometers. Since 0.5 micron is already in the wavelength range of visible light, the transparent bump 370 having a height of 0.5 micron will generate diffraction and affect the generated image. The irregularly arranged transparent bumps 370 (as shown in FIG. 4) can reduce optical interference to reduce the influence of diffraction on the image.

綜上所述,當內部光源發出光線時,本發明至少一實施例所揭露的透明凸塊能偏折原本被反光部遮擋的部分光線,以使此部分的光線能穿透半穿反顯示面板。因此,透明凸塊可以幫助內部光源所發出的部分光線不被反光部所遮擋,進而提升內部光源的光利用率。相較於現有的半穿反顯示面板,本發明至少一實施例所提供的半穿反顯示面板能在昏暗環境下(例如夜晚的郊區以及光線不足的室內環境),採用較低強度的光線,即能顯示足夠亮度的影像供使用者觀看,從而有助於降低內部光源的消耗功率。In summary, when the internal light source emits light, the transparent bumps disclosed in at least one embodiment of the present invention can deflect part of the light originally blocked by the reflective portion, so that the light in this part can penetrate the transflective display panel. . Therefore, the transparent bump can help part of the light emitted by the internal light source not be blocked by the reflective portion, thereby improving the light utilization efficiency of the internal light source. Compared with the existing transflective display panel, the transflective display panel provided by at least one embodiment of the present invention can use a lower intensity light in a dim environment (such as a suburb at night and an indoor environment with insufficient light). That is, it can display an image with sufficient brightness for users to watch, thereby helping to reduce the power consumption of the internal light source.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明精神和範圍內,當可作些許更動與潤飾,因此本發明保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above by way of examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains may make some modifications and retouching without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.

10‧‧‧半穿反顯示器10‧‧‧ Semi-transparent display

11‧‧‧內部光源 11‧‧‧Internal light source

23d‧‧‧汲極 23d‧‧‧Drain

23c‧‧‧通道層 23c‧‧‧Channel layer

23g‧‧‧閘極 23g‧‧‧Gate

23s‧‧‧源極 23s‧‧‧Source

100‧‧‧半穿反顯示面板 100‧‧‧ Semi-transparent display panel

101‧‧‧顯示面 101‧‧‧display surface

120‧‧‧對向基板 120‧‧‧ Opposite substrate

140‧‧‧液態顯像層 140‧‧‧ liquid imaging layer

141‧‧‧液晶分子 141‧‧‧LCD molecules

200、300、400、500‧‧‧元件陣列基板 200, 300, 400, 500‧‧‧‧ element array substrate

210‧‧‧透明基板 210‧‧‧ transparent substrate

220‧‧‧畫素電極 220‧‧‧pixel electrode

220f‧‧‧反光部 220f‧‧‧Reflector

220t‧‧‧透光部 220t‧‧‧light transmission

221‧‧‧透明導電層 221‧‧‧ transparent conductive layer

222‧‧‧金屬層 222‧‧‧metal layer

222a‧‧‧反射面 222a‧‧‧Reflective surface

230‧‧‧開關陣列 230‧‧‧Switch Array

231‧‧‧開關電路 231‧‧‧Switch circuit

232‧‧‧開關元件 232‧‧‧Switch element

233d‧‧‧資料線 233d‧‧‧data line

233s‧‧‧掃描線 233s‧‧‧scan line

240‧‧‧透明保護層 240‧‧‧ transparent protective layer

241‧‧‧第一區塊 241‧‧‧ Block 1

242‧‧‧第二區塊 242‧‧‧Second Block

250‧‧‧絕緣層 250‧‧‧ Insulation

260‧‧‧閘極絕緣層 260‧‧‧Gate insulation

270、370‧‧‧透明凸塊 270, 370‧‧‧ transparent bump

271‧‧‧中心線 271‧‧‧center line

272‧‧‧拋物凸面 272‧‧‧ Parabolic Convex

280‧‧‧共用線 280‧‧‧shared line

281‧‧‧延伸部 281‧‧‧ extension

L1‧‧‧光線 L1‧‧‧light

H27‧‧‧高度 H27‧‧‧height

P27‧‧‧間距 P27‧‧‧Pitch

PX1‧‧‧畫素結構 PX1‧‧‧Pixel Structure

W1‧‧‧接觸窗 W1‧‧‧Contact window

W27‧‧‧寬度 W27‧‧‧Width

圖1A是根據本發明至少一實施例所繪製的半穿反顯示器的剖面示意圖。 圖1B是圖1A中的元件陣列基板的佈線(layout)示意圖。 圖1C是沿圖1B中的線1C-1C剖面所繪製的剖面示意圖。 圖2A是根據本發明至少一實施例所繪製的元件陣列基板的佈線示意圖。 圖2B是沿圖2A中的線2B-2B剖面所繪製的剖面示意圖。 圖3是根據本發明至少一實施例所繪製的元件陣列基板的佈線示意圖。 圖4是根據本發明至少一實施例所繪製的元件陣列基板的佈線示意圖。FIG. 1A is a schematic cross-sectional view of a transflective display according to at least one embodiment of the present invention. FIG. 1B is a schematic diagram of a layout of the element array substrate in FIG. 1A. FIG. 1C is a schematic cross-sectional view taken along a line 1C-1C in FIG. 1B. FIG. 2A is a schematic wiring diagram of a device array substrate according to at least one embodiment of the present invention. FIG. 2B is a schematic cross-sectional view taken along line 2B-2B in FIG. 2A. FIG. 3 is a schematic wiring diagram of a device array substrate according to at least one embodiment of the present invention. FIG. 4 is a schematic wiring diagram of a device array substrate according to at least one embodiment of the present invention.

Claims (14)

一種畫素結構,包括:一開關電路;一畫素電極,電連接該開關電路,並具有一反光部以及一透光部,其中該反光部鄰接於該透光部;一絕緣層,覆蓋該開關電路,並位於該畫素電極與該開關電路之間;一透明保護層,位於該絕緣層與該畫素電極之間,並具有彼此相連的一第一區塊與一第二區塊,其中該反光部覆蓋該第一區塊,而該透光部覆蓋該第二區塊,該反光部與該絕緣層之間的距離大於該透光部與該絕緣層之間的距離;以及至少一透明凸塊,形成該絕緣層上,並且被該透明保護層所包覆,其中該反光部與該至少一透明凸塊重疊,而該至少一透明凸塊位於該反光部以及該透光部之間的交界處。A pixel structure includes: a switch circuit; a pixel electrode, electrically connected to the switch circuit, and having a light reflecting portion and a light transmitting portion, wherein the light reflecting portion is adjacent to the light transmitting portion; an insulating layer covers the A switching circuit, located between the pixel electrode and the switching circuit; a transparent protective layer, located between the insulating layer and the pixel electrode, and having a first block and a second block connected to each other, Wherein the light reflecting part covers the first block, and the light transmitting part covers the second block, the distance between the light reflecting part and the insulating layer is greater than the distance between the light transmitting part and the insulating layer; and at least A transparent bump formed on the insulating layer and covered by the transparent protective layer, wherein the reflective portion overlaps the at least one transparent bump, and the at least one transparent bump is located in the reflective portion and the transparent portion The junction between. 如請求項第1項所述的畫素結構,其中該至少一透明凸塊的數量為多個,而多個該透明凸塊沿著該反光部的邊緣而排列。The pixel structure of claim 1, wherein the number of the at least one transparent bump is plural, and the plurality of transparent bumps are arranged along the edge of the reflective portion. 如請求項第1項所述的畫素結構,其中多個該透明凸塊沿著該反光部與該透光部之間的交界處排列。The pixel structure according to claim 1, wherein a plurality of the transparent bumps are arranged along the boundary between the light reflecting part and the light transmitting part. 如請求項第1項所述的畫素結構,其中該至少一透明凸塊的數量為多個,而該些透明凸塊位於該反光部與該絕緣層之間。The pixel structure as recited in claim 1, wherein the number of the at least one transparent bump is plural, and the transparent bumps are located between the reflective portion and the insulating layer. 如請求項第4項所述的畫素結構,其中該些透明凸塊呈規則排列。The pixel structure as described in claim 4, wherein the transparent bumps are arranged regularly. 如請求項第4項所述的畫素結構,其中該些透明凸塊呈不規則排列。The pixel structure as described in claim 4, wherein the transparent bumps are arranged irregularly. 如請求項第1項所述的畫素結構,其中該透明凸塊的頂端具有一拋物凸面。The pixel structure as described in claim 1, wherein the top of the transparent bump has a parabolic convex surface. 如請求項第7項所述的畫素結構,其中該透明凸塊在該拋物凸面處的寬度介於1.1微米至2微米之間。The pixel structure as recited in claim 7, wherein the width of the transparent bump at the parabolic convex surface is between 1.1 microns and 2 microns. 如請求項第1或7項所述的畫素結構,其中該透明凸塊的高度介於0.5微米至3微米之間。The pixel structure according to claim 1 or 7, wherein the height of the transparent bump is between 0.5 microns and 3 microns. 如請求項第1項所述的畫素結構,其中該至少一透明凸塊的數量為多個,且該些透明凸塊彼此相連。The pixel structure according to claim 1, wherein the number of the at least one transparent bump is plural, and the transparent bumps are connected to each other. 如請求項第1項所述的畫素結構,其中該至少一透明凸塊的數量為多個,且該些透明凸塊彼此分離。The pixel structure according to claim 1, wherein the number of the at least one transparent bump is plural, and the transparent bumps are separated from each other. 如請求項第1項所述的畫素結構,其中該透明凸塊的折射率小於該透明保護層的折射率。The pixel structure of claim 1, wherein the refractive index of the transparent bump is smaller than the refractive index of the transparent protective layer. 如請求項第1項所述的畫素結構,其中該反光部具有一反射面,該至少一透明凸塊重疊於該反射面的面積與該反射面的面積之間的比值介於0.9%至1.7%之間。The pixel structure according to claim 1, wherein the reflective portion has a reflective surface, and the ratio between the area of the at least one transparent bump overlapping the reflective surface and the reflective surface is between 0.9% and Between 1.7%. 一種半穿反顯示面板,包括一元件陣列基板,包括:一透明基板;一開關陣列,形成於該透明基板上;多個畫素電極,電連接該開關陣列,其中各該畫素電極具有一反光部以及一透光部,而該反光部鄰接於該透光部;一絕緣層,覆蓋該開關陣列,並位於該些畫素電極與該開關陣列之間;一透明保護層,位於該絕緣層與該些畫素電極之間,並具有多個第一區塊與多個第二區塊,該些第一區塊與該些第二區塊彼此相連,其中該些反光部分別覆蓋該些第一區塊,而該些透光部分別覆蓋該些第二區塊,各該反光部與該絕緣層之間的距離大於各該透光部與該絕緣層之間的距離;多個透明凸塊,形成該絕緣層上,並且被該透明保護層所包覆,其中該些反光部與該些透明凸塊重疊,而該至少一透明凸塊位於該反光部以及該透光部之間的交界處;一對向基板,相對於該元件陣列基板;以及一液態顯像層,配置在該元件陣列基板與該對向基板之間。A transflective display panel includes an element array substrate, including: a transparent substrate; a switch array formed on the transparent substrate; a plurality of pixel electrodes electrically connected to the switch array, wherein each of the pixel electrodes has a A light reflecting part and a light transmitting part, and the light reflecting part is adjacent to the light transmitting part; an insulating layer covering the switch array is located between the pixel electrodes and the switch array; a transparent protective layer is located on the insulating Between the layer and the pixel electrodes, there are a plurality of first blocks and a plurality of second blocks, the first blocks and the second blocks are connected to each other, wherein the reflective portions cover the A plurality of first blocks, and the light-transmitting parts cover the second blocks, the distance between each light-reflecting part and the insulating layer is greater than the distance between each light-transmitting part and the insulating layer; A transparent bump formed on the insulating layer and covered by the transparent protective layer, wherein the reflective portions overlap with the transparent bumps, and the at least one transparent bump is located between the reflective portion and the transparent portion The boundary between the element array substrate and the counter substrate; and a liquid imaging layer disposed between the element array substrate and the counter substrate.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101059612A (en) * 2006-04-19 2007-10-24 奇美电子股份有限公司 Method for manufacturing semi-transmissive and semi-reflective liquid crystal panel and active element array substrate
TWI312433B (en) * 2005-08-11 2009-07-21 Chi Mei Optoelectronics Corporatio Transflective liquid crystal display apparatus, panel and fabricating method thereof
TWI456296B (en) * 2009-12-16 2014-10-11 Au Optronics Corp Transflective liquid crystal display
TWI528077B (en) * 2014-12-24 2016-04-01 群創光電股份有限公司 Display device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3714244B2 (en) * 2001-12-14 2005-11-09 セイコーエプソン株式会社 Transflective / reflective electro-optical device manufacturing method, transflective / reflective electro-optical device, and electronic apparatus
KR100491258B1 (en) * 2002-12-31 2005-05-24 엘지.필립스 엘시디 주식회사 method for fabricating a Transflective liquid crystal display device and the same
JP4866703B2 (en) * 2006-10-20 2012-02-01 株式会社 日立ディスプレイズ Liquid crystal display
CN100583416C (en) * 2007-10-08 2010-01-20 友达光电股份有限公司 Semi-penetration and reflection type display element and manufacturing method thereof
CN101393346B (en) * 2008-11-19 2011-11-30 友达光电股份有限公司 LCD module
KR20120061540A (en) * 2010-12-03 2012-06-13 엘지디스플레이 주식회사 Method of fabricating array substrate for In-plane switching mode transflective type liquid crystal display device
CN102393581A (en) * 2011-11-29 2012-03-28 南京中电熊猫液晶显示科技有限公司 Transflective liquid crystal display device
CN202815383U (en) * 2012-10-15 2013-03-20 京东方科技集团股份有限公司 Transflective and semireflective type display panel of blue phase liquid crystal
CN107357076A (en) * 2017-08-16 2017-11-17 深圳市华星光电半导体显示技术有限公司 Transmitting/reflecting LCD and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI312433B (en) * 2005-08-11 2009-07-21 Chi Mei Optoelectronics Corporatio Transflective liquid crystal display apparatus, panel and fabricating method thereof
CN101059612A (en) * 2006-04-19 2007-10-24 奇美电子股份有限公司 Method for manufacturing semi-transmissive and semi-reflective liquid crystal panel and active element array substrate
TWI456296B (en) * 2009-12-16 2014-10-11 Au Optronics Corp Transflective liquid crystal display
TWI528077B (en) * 2014-12-24 2016-04-01 群創光電股份有限公司 Display device

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