TWI667804B - Solar cell cell manufacturing method - Google Patents

Abstract

The present invention provides a method for producing a solar cell having a simple step, high mass productivity, and no need for an organic solvent having high volatility to make the environmental load small. A method for producing a solar cell, characterized in that a liquid resin which is cured by an active energy ray is applied to a field of a part of a main surface of a semiconductor substrate (1) by a printing method. a printing step of forming a resin layer (5) composed of a liquid resin and capable of forming a pattern of the insulating layer (2); irradiating the resin layer (5) with an active energy ray to cure the liquid resin, and the main layer of the semiconductor substrate (1) a step of curing the insulating layer (2) formed of a cured product of a liquid resin on the surface: an exposed surface of the semiconductor substrate (1) connected to the insulating layer (2) by the opening (2a) The electrode (3) is formed by electroplating in the opening portion (2a) of the insulating layer (2).

Description

Solar cell cell manufacturing method

[0001] The present invention relates to a method of manufacturing a solar cell.

[0002] A method of manufacturing a solar cell using a photolithography technique and an electroplating method is known. For example, Patent Document 1 discloses a method of forming a resin layer by applying a liquid photocurable resin to the entire surface of the main surface of a tantalum substrate by a spin coating method, a spray method, a dipping method, or the like, and selectively selecting a field of the resin layer. A method of irradiating light to harden a photocurable resin in a specified field. Since the photocurable resin in the field which is not irradiated with light is not cured, if the uncured photocurable resin is removed with an organic solvent such as acetone, an insulating layer having an opening is formed by patterning. Next, electroplating is performed by using an insulating layer having an opening as a mask, and when an electrode is formed on the conductive film layer exposed in the opening, a solar cell is obtained. However, in the method for producing a solar cell disclosed in Patent Document 1, the photomask is selectively irradiated with light in a predetermined region of the resin layer, or the uncured photocurable resin is removed by an organic solvent. Necessity, there are problems with complicated steps and mass production is not enough. In addition, due to the use of highly volatile organic solvents, there is also a problem of a large environmental load. [Prior Art Document] [Patent Document] [0003] [Patent Document 1] International Publication No. 2012/029847

[Problems to be Solved by the Invention] Accordingly, the problem of the present invention is to solve the problems of the prior art described above, and to provide an organic solvent which is simple in steps, high in mass productivity, and which does not require high volatility. A method for manufacturing a solar cell with a small environmental load. [Means for Solving the Problem] [0005] In order to solve the above problems, one aspect of the present invention is as follows [1] to [11]. [1] A method for producing a solar cell, comprising: a semiconductor substrate; an insulating layer formed on a main surface of the semiconductor substrate; and an electrode connected to the semiconductor substrate, wherein the insulating layer has an opening, and the electrode is disposed in the foregoing a method for producing a solar cell in an opening and connected to an exposed surface of the semiconductor substrate exposed from the insulating layer by the opening, characterized in that the liquid resin is cured by active energy ray a printing step of applying a resin layer to a region of a part of the main surface of the semiconductor substrate by a printing method to form a resin layer composed of the liquid resin and capable of forming a pattern of the insulating layer; and irradiating the resin layer with active energy The liquid resin is cured by the ray, and a step of curing the insulating layer composed of the cured product of the liquid resin is formed on the main surface of the semiconductor substrate: and the electrode is connected to the exposed surface of the semiconductor substrate by electroplating Formed in the aforementioned opening portion of the insulating layer Electroplating step. [2] The method for producing a solar cell according to [1], wherein the printing method comprises a screen printing method. [3] The method for producing a solar cell according to the above [1], wherein the viscosity of the liquid resin at 25 ° C is 1 Pa·s or more and 200 Pa·s or less. [4] The method for producing a solar cell according to any one of [1] to [3] wherein the thickness of the insulating layer is 5 μm or more and 100 μm or less. [5] The method for producing a solar cell according to any one of [1] to [4] wherein the plating method is an electrolytic plating method or an electroless plating method. [6] The method for producing a solar cell according to any one of [1] to [5] wherein the electrode is made of copper, nickel, tin, silver, cobalt, zinc, palladium, indium, or the like. At least one of the alloys is composed of. [7] The method for producing a solar cell according to any one of [1] to [6] wherein the thickness of the electrode is 0.1 μm or more and 100 μm or less. [8] The method for producing a solar cell according to any one of [1] to [7] wherein the electrode is composed of a single metal film or a plurality of laminated metal films. [9] The method for producing a solar cell according to any one of [1] to [8] wherein, in the curing step, the active energy ray is irradiated to the resin layer at a plurality of stages to form the liquid The resin is hardened in a plurality of stages. [10] The method for producing a solar cell according to [9], wherein the light source of the active energy ray used in the first stage of the active energy ray is an LED lamp. [11] The method for producing a solar cell according to any one of the above aspects, wherein, in the curing step, the temperature of the semiconductor substrate when the liquid resin is cured is 200 ° C or lower. [Effects of the Invention] The method for producing a solar cell of the present invention is characterized in that the steps are simple, the mass productivity is high, and the organic solvent having high volatility is not required, so that the environmental load is small.

[0012] An embodiment of the present invention will be described below. Further, since each drawing is a drawing of a pattern, the dimensional ratios of the respective structures may be different from each other in the drawing, or may be different between the respective drawings. [First Embodiment] The solar cell of the first embodiment shown in FIGS. 1 to 3 has a back surface on the light receiving surface (the surface on the upper side in FIG. 1) and the opposite side of the light receiving surface. The surface on the lower side of FIG. 1 is provided with a bus bar electrode 31 and a finger electrode 32. In other words, in the light receiving surface of the solar cell of the first embodiment, as shown in FIG. 2, the linear bus bar electrode 31 is disposed, and the linear finger electrode 32 is disposed to be orthogonal to the bus bar electrode 31. . As shown in FIG. 3, the linear bus bar electrode 31 is disposed on the back surface of the solar cell of the first embodiment, and the linear finger electrode 32 is disposed so as to be orthogonal to the bus bar electrode 31. [0014] The solar cell of the first embodiment includes a semiconductor substrate 1, and a light-transmitting insulating layer 2 (light-receiving surface side and back surface side) formed on both main surfaces of the semiconductor substrate 1 and connected thereto. The electrode 3 (light receiving surface side and back surface side) of the semiconductor substrate 1. The two insulating layers 2 (the light receiving surface side and the back surface side) each have an opening 2a (a light receiving surface side and a back surface side). In addition, the "opening portion" of the present invention means that the insulating layer 2 and the various layers such as the resin layer 5 to be described later constitute a portion in which the material of the layer penetrates from the light-receiving surface side to the back surface side in the thickness direction (for example, The through hole that penetrates the insulating layer 2 and the resin layer 5 in the thickness direction does not include a concave portion (for example, a bottomed hole) in which a material constituting the layer exists on the side from the light receiving surface side to the back side. [0015] The electrode 3 (light-receiving surface side and back surface side) are disposed in the opening 2a (light-receiving surface side and back surface side), and are connected to the insulating layer 2 (light-receiving surface) by the opening 2a (light-receiving surface side and back surface side). The exposed surface of the exposed semiconductor substrate 1 on the side and the back side constitutes the bus bar electrode 31 and the finger electrode 32 on the light-receiving surface and the back surface, respectively. [0016] As shown in FIG. 1, the semiconductor substrate 1 includes an n-type single crystal germanium substrate 11 formed on both main surfaces of a concavo-convex structure called a texture, and two main layers of the n-type single crystal germanium substrate 11 laminated. The i-type amorphous ruthenium layer 12 (the light-receiving surface side and the back surface side) on the surface, and the p-type amorphous ruthenium layer 13 laminated on the i-type amorphous ruthenium layer 12 on the light-receiving surface side are laminated on the back side. The n-type amorphous germanium layer 14 on the i-type amorphous germanium layer 12 and the transparent conductive film layer 15 (the light-receiving surface side) laminated on the p-type amorphous germanium layer 13 and the n-type amorphous germanium layer 14, respectively And the back side). [0017] The electrode 3 disposed in the opening 2a is connected to the exposed surface of the semiconductor substrate 1 exposed from the insulating layer 2, that is, the transparent conductive film layer 15, by the opening 2a. In the first embodiment, since the transparent conductive film layer 15 is formed on the outermost layer of the semiconductor substrate 1, the exposed surface of the semiconductor substrate 1 exposed by the opening 2a is the surface of the transparent conductive film layer 15, and is formed in other kinds of layers. When it is formed on the outermost layer, the surface of the outermost layer is the exposed surface. [0018] The electrode 3 is composed of a metal film formed by an electroplating method. In the solar cell of the first embodiment shown in Fig. 1, the electrode 3 is formed by laminating three layers of a metal film. That is, the nickel plating layer 3a is laminated on the transparent conductive film layer 15, the copper plating layer 3b is laminated on the nickel plating layer 3a, and the tin plating layer 3c is laminated on the copper plating layer 3b. Further, in the example of FIG. 1, the electrode 3 is formed by a metal film in which three layers are laminated, but the number of layers of the metal film is not limited to three layers, and may be two layers or four or more layers. Further, the electrode 3 may be composed of a single metal film. The surface of the transparent conductive film layer 15 is formed into a concavo-convex shape by the influence of the texture of the underlying n-type single crystal germanium substrate 11, but the electrode 3 (nickel plating layer 3a) is formed so as to completely contact the unevenness of the transparent conductive film layer 15. Since the surface of the transparent conductive film layer 15 and the electrode 3 (nickel plating layer 3a) have high adhesion, the contact resistance is kept low. [0020] Next, a method of manufacturing a solar cell of the first embodiment will be described with reference to FIGS. 1 and 4 to 7. First, a single crystal block piece called an ingot in which any impurity is added is cut into a plate having a thickness of 100 μm or more and 200 μm or less. Next, the plate is immersed in an alkaline solution such as a sodium hydroxide solution or a potassium hydroxide solution after the base is washed, and irregularly formed a plurality of pyramid-shaped irregularities called textures on the surface thereof to form an n-type. Single crystal germanium substrate 11. The height difference of the pyramid shape irregularities is at most 20 μm, and it has an effect of reducing the reflection of the incident light and promoting the light scattering in the cells of the solar cell. Further, the height, the size, the shape, and the like of the pyramid-shaped irregularities formed on the surface of the n-type single crystal germanium substrate 11 may be substantially the same or different. Further, it is possible to have a configuration in which a part of the adjacent concavities and convexities overlap, or the overlapping portion does not exist and the concavities and convexities are all independent. The top or bottom of the bump can be sharpened or rounded. [0022] Next, the N-type single crystal germanium substrate 11 is subjected to RCA cleaning (removal of organic contaminants or foreign matter by an aqueous solution containing ammonia and hydrogen peroxide, and use of an aqueous solution containing hydrogen chloride and hydrogen peroxide) After the cleaning treatment such as removal of the metal contaminant, the surface oxide film is removed by using a hydrofluoric acid aqueous solution. Then, the i-type amorphous germanium layer 12 is formed on the main surface of the n-type single crystal germanium substrate 11 on the light-receiving surface side by the plasma CVD method (chemical vapor deposition method using plasma), and p is formed thereon. At the same time, an i-type amorphous ruthenium layer 12 is formed on the main surface of the back surface side of the n-type single crystal germanium substrate 11, and an n-type amorphous ruthenium layer 14 is formed thereon. Further, the i-type amorphous ruthenium layer 12 is formed by a reaction gas such as decane, hydrogen or carbonic acid gas (carbon dioxide) at a fixed deposition rate. The p-type amorphous ruthenium layer 13 is formed by a reaction gas such as decane, hydrogen or diborane at a fixed deposition rate. The n-type amorphous ruthenium layer 14 is formed by a reaction gas such as decane, hydrogen or phosphine at a fixed deposition rate. The film thickness of the i-type amorphous ruthenium layer 12, the p-type amorphous ruthenium layer 13, and the n-type amorphous ruthenium layer 14 can be 5 nm or more and 20 nm or less. [0024] When forming a film by the plasma CVD method, it is preferable to maintain the temperature of the n-type single crystal germanium substrate 11 at 220 ° C or lower. When the temperature of the n-type single crystal germanium substrate 11 is maintained at 220° C. or less, it is less likely to cause performance deterioration during film formation by the plasma CVD method, and it is easy to obtain solar cells having excellent power generation performance. [0025] The i-type amorphous ruthenium layer 12, the p-type amorphous ruthenium layer 13, and the n-type amorphous ruthenium layer 14 may be formed by using one type of amorphous semiconductor or by combining two or more types of amorphous materials. Semiconductors are formed. Examples of the amorphous semiconductor include amorphous tantalum, amorphous tantalum carbide, and amorphous tantalum. However, the present invention is not limited thereto, and other amorphous semiconductor containing germanium may be used. Then, a transparent conductive film layer 15 (light-receiving surface side and back surface side) is formed on each of the p-type amorphous germanium layer 13 and the n-type amorphous germanium layer 14 by a sputtering method or an ion plating method to obtain a semiconductor. Substrate 1 (see Fig. 4). The transparent conductive film layer 15 (light-receiving surface side and back surface side) is made of, for example, indium tin oxide (ITO), and its thickness is, for example, 70 nm or more and 100 nm or less. [0027] The film formation of the transparent conductive film layer 15 (light-receiving surface side and back surface side) is generally performed by physical vapor deposition (PVD), but is not limited to PVD, and sputtering, ion plating, or electron beam can be used. A physical vapor deposition method such as vapor deposition or vacuum deposition, or a chemical vapor deposition method such as a normal pressure CVD method, a reduced pressure CVD method, or a plasma CVD method. Further, as a material constituting the transparent conductive film layer 15, indium tungsten oxide (IWO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), aluminum zinc oxide can be used in addition to ITO. A metal oxide such as (AZO). [0029] Next, on both main surfaces of the semiconductor substrate 1 obtained by the above-described method, the insulating layer 2 (the light-receiving surface side and the back surface side) is formed in the following manner. First, as shown in FIG. 5, a liquid resin which is cured by an active energy ray is applied to a field of a part of the main surface of the semiconductor substrate 1 by a printing method to form a liquid resin. The resin layer 5 is constituted (printing step). [0030] The insulating layer 2 has an opening 2a, and it is necessary to form the opening 2a in the insulating layer 2 when the resin layer 5 is cured by the active energy ray to form the insulating layer 2. The resin layer 5 of the pattern of the insulating layer 2 is formed in the printing step. That is, the resin layer 5 having the opening 5a and having substantially the same shape as the insulating layer 2 is formed in the printing step (see FIG. 5). The type of the printing method is not particularly limited, and a relief printing method, a gravure printing method, a lithography method, a stencil printing method, or the like can be used, but among these, a stencil printing method is preferable. Therefore, in consideration of the formation of the opening portion 5a, the screen printing method is particularly excellent in terms of productivity and printing accuracy in the stencil printing method. The type of the liquid resin is not particularly limited as long as it has a property of being reacted and hardened by irradiation with an active energy ray, and for example, a (meth)acrylic group or a (meth)allyl group can be used. A resin having a reactive functional group such as an alkenyl group or a thiol group. Further, a resin having a thiol group and an ethylenically unsaturated bond can be used. Among these, a (meth)acrylic resin having a (meth)acryl group is preferable. Further, in consideration of the weather resistance of the insulating layer 2, it is preferable that the aromatic ring is not present in the skeleton of the liquid resin; in consideration of the durability of the solar cell, it is preferable to have an aliphatic hydrocarbon group in the skeleton of the liquid resin. And/or an alicyclic hydrocarbon group. Further, "(meth)acrylic group" means "methacryloyl group and/or acrylic group";"(meth)allyl group means "methallyl group and/or allyl group" [0033] The liquid resin preferably has a specified viscosity in order to form the resin layer 5 having the above pattern by a printing method. In other words, the viscosity of the liquid resin at 25 ° C is preferably 1 Pa·s or more and 200 Pa·s or less, preferably 10 Pa·s or more and 180 Pa·s or less, more preferably 10 Pa·s or more and 150 Pa·s or less, and 30 Pa·s or more and 150 Pa or more.・The following is excellent, and it is the best of 30Pa·s or more and 130Pa·s or less. When the viscosity of the liquid resin at 25° C. is 1 Pa·s or more, it is difficult to cause the liquid resin to flow out, and the shape of the resin layer 5 formed by the printing method is not easily deformed, and in addition, it is easy to form a large thickness. Resin layer 5. On the other hand, when the viscosity of the liquid resin at 25 ° C is 200 Pa·s or less, the transfer property of the liquid resin to the semiconductor substrate 1 is excellent, and voids or pinholes are less likely to be formed in the resin layer 5 (pinhole). ) The tendency. Further, the viscosity of the liquid resin at 25 ° C was measured by the following method using a rotary viscometer. Cone-type viscosity meter (type of viscometer: DV-II+Pro, spindle type: CPE-52) manufactured by Brookfield, filled with liquid resin 0.5mL at a temperature of 25.0 ° C and a rotation speed of 3.0 min. ^-1 Cutting speed 6s ^-1 The viscosity was measured under the conditions. As the measured value, the viscosity measured after 7 minutes from the start of the measurement was used. [0036] In the liquid resin, in order to enhance various properties of the resin layer 5 or the insulating layer 2, additives may be added according to various needs (for example, a photopolymerization initiator, an oxidation inhibitor, a reinforcing material, or a resin other than the liquid resin) , solvent). In other words, the resin composition of the resin composition may be formed by applying a resin composition of the mixed liquid resin and the additive to a portion of the main surface of the semiconductor substrate 1 by a printing method. [0037] Next, after the resin layer 5 composed of a liquid resin is formed on both main surfaces of the semiconductor substrate 1, the entire resin layer 5 is irradiated with an active energy ray (for example, ultraviolet ray) to cure the liquid resin (curing step). . Then, on both main surfaces of the semiconductor substrate 1, an insulating layer 2 composed of a cured product of a liquid resin is formed. The resin layer 5 has the opening portion 5a which becomes the opening portion 2a after curing, and the insulating layer 2 having the opening portion 2a is formed on both main surfaces of the semiconductor substrate 1 (see FIG. 6). A part of the surface of the transparent conductive film layer 15 of the semiconductor substrate 1 is exposed from the insulating layer 2 by the opening 2a. [0038] In the insulating layer 2, the subsequent plating step functions as a mask for preventing the formation of the plating film, and the semiconductor substrate 1 can be improved by forming the insulating layer 2 on both main surfaces of the semiconductor substrate 1. The strength also functions as a reinforcing member that suppresses cracking or chipping of the semiconductor substrate 1. Therefore, it is possible to suppress cracking or the like of the semiconductor substrate 1 at the time of setting the jig, and to improve productivity. Further, even when the semiconductor substrate 1 is cracked or notched, the insulation of the semiconductor substrate 1 can be suppressed by the insulating layer 2. The thickness of the insulating layer 2 is not particularly limited, but is preferably 5 μm or more and 100 μm or less. Therefore, it is preferable that the thickness of the resin layer 5 is such that the thickness of the insulating layer 2 formed by curing the liquid resin is 5 μm or more and 100 μm or less. When the thickness of the insulating layer 2 is within the above range, it is possible to exhibit sufficient plating solution resistance and to have sufficient transparency which does not hinder power generation. Further, the surface of the transparent conductive film layer 15 (the light-receiving surface side and the back surface side) is formed into a concavo-convex shape by the influence of the texture of the underlying n-type single crystal germanium substrate 11, and the insulating layer 2 (light-receiving surface side and back surface side) The surface (inner surface) on the side of the transparent conductive film layer 15 (light-receiving surface side and back surface side) among the surfaces of the transparent conductive film layer 15 is formed so as to correspond to the uneven surface of the transparent conductive film layer 15 (light-receiving surface side and back surface side). The shape of the surface is formed smoothly on the surface (outer surface) on the light receiving surface side and the surface (outer surface) on the back surface side among the surfaces of the insulating layer 2 (light receiving surface side and back surface side). When the insulating layer is formed by a normal CVD method or the like, the thickness of the insulating layer is thin, and the texture of the n-type single crystal germanium substrate 11 is likely to cause defects at the apex portion or the bottom portion of the unevenness of the texture. On the other hand, in the method of manufacturing a solar cell according to the first embodiment, since the screen printing method is used to form the insulating layer 2, it is possible to form a bottom portion of the unevenness of the texture and cover the thick portion of the apex portion of the uneven portion. The film thickness of the insulating layer 2 forms a smooth surface (outer surface) of the insulating layer 2. The type of the active energy ray is not particularly limited as long as the radical active species are generated, and ionizing radiation such as ultraviolet rays, electron beams, X-rays, α-rays, β-rays, and γ-rays, or microwaves may be used. High-frequency waves, visible rays, near-infrared rays, infrared rays, laser rays, and the like. Among these active energy rays, ultraviolet rays, visible rays, and near infrared rays are preferred, and ultraviolet rays and visible rays are preferred, and light containing ultraviolet rays is more preferable. Therefore, the liquid resin which is cured by the active energy ray is preferably a photocurable resin capable of sensitizing or curing at least one of ultraviolet rays, visible rays, and near infrared rays, and is capable of at least ultraviolet rays and visible rays. It is preferable that one photo-resisting and hardening photocurable resin is preferable, and it is preferable to use a photocurable resin which is sensitive to light containing ultraviolet rays and hardened. [0044] Examples of the light source that generates ultraviolet rays include an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a medium pressure mercury lamp, a low pressure mercury lamp, a metal halide lamp, a xenon lamp, an LED lamp, a halogen lamp, a carbon arc lamp, a cadmium cadmium laser, and the like. YAG laser, excimer laser, argon laser, etc. Among these, ultrahigh pressure mercury lamps, high pressure mercury lamps, medium pressure mercury lamps, low pressure mercury lamps, metal halide lamps, and LED lamps are preferred, and ultra high pressure mercury lamps, high pressure mercury lamps, metal halide lamps, and LED lamps are preferred. Further, the irradiation of the active energy ray (hardening of the liquid resin) in the hardening step may be carried out in one stage or in a plurality of stages. For example, after the liquid resin is preliminarily hardened by the irradiation of the first stage, it is hardened by the irradiation after the second stage. When the liquid resin is hardened in a plurality of stages, the liquid resin in the curing step can be prevented from flowing and the printed pattern can be stabilized, and further, the curing shrinkage of the liquid resin can be suppressed, and the semiconductor substrate which is caused by the hardening shrinkage can be reduced. Internal stress. [0046] As a light source of the active energy ray used for the irradiation in the first stage, compared with a high-pressure mercury lamp, the LED lamp (for example, a wavelength of 300 nm or 365 nm) can suppress the temperature rise when the liquid resin is hardened. It is better. Further, the temperature of the semiconductor substrate in the hardening step is preferably 10 ° C or higher. Further, from the viewpoint of preventing the flow of the liquid resin, the temperature of the semiconductor substrate in the curing step is preferably 200 ° C or less, more preferably 150 ° C or less, and still more preferably 120 ° C or less. [0047] Next, the semiconductor substrate 1 on which the insulating layer 2 (the light-receiving surface side and the back surface side) is formed is subjected to electroplating (electroplating step). When the electrode is formed by electroplating, it is necessary to cover the object to be plated with an insulator so that plating is not applied to a portion other than the portion where the electrode is to be formed. The two main faces of the semiconductor substrate 1 are covered with the insulating layer 2 (light-receiving surface side and back surface side), and the opening portion 2a is provided in a portion where the electrode 3 is to be formed, and the semiconductor substrate 1 exposed from the insulating layer 2 by the opening portion 2a is used. The exposed surface is applied to form an electrode 3 by electroplating. Therefore, the electrode 3 connected to the exposed surface of the semiconductor substrate 1 is formed by the plating method in the opening 2a of the insulating layer 2 (see FIG. 7). [0048] FIG. 7 is a view showing a state in which the nickel plating layer 3a constituting the electrode 3, the copper plating layer 3b, and the tin plating layer 3c are formed in the lowermost layer. When the copper plating layer 3b and the tin plating layer 3c are formed by electroplating after the formation of the nickel plating layer 3a, the solar cell of FIG. 1 in which the bus bar electrode 31 and the finger electrode 32 are formed on the light receiving surface and the back surface of the semiconductor substrate 1 can be obtained. Cell. The plating is usually performed simultaneously on the light-receiving surface and the back surface of the semiconductor substrate 1, but they may be carried out separately. When plating is applied to the opening of the insulating layer having a small thickness, the plating film is grown not only in the thickness direction but also in the direction orthogonal to the thickness direction, and the width of the electrode is increased to cause a light-shielding loss. Doubt. On the other hand, in the method of manufacturing the solar cell of the first embodiment, since the thickness of the insulating layer 2 is 5 μm or more and 100 μm or less, the plating film is less likely to grow in the direction orthogonal to the thickness direction, and the electrode 3 can be thinned. Further, in the case where an insulating layer is usually formed by a CVD method or the like, it takes a long time to form an insulating layer having a thick film thickness, and it is difficult to form an insulating layer having a film thickness of 1 μm or more. On the other hand, when the insulating layer is formed by the method for manufacturing a solar cell of the first embodiment, it is possible to form a thick layer of the embossed portion which is easy to form a thick portion of the film without requiring a long time to form an insulating layer having a thick film thickness. A thick film thickness of the insulating layer. The type of the plating method is not particularly limited, and for example, a melt plating method, a vapor phase plating method, an electrolytic plating method, an electroless plating method (that is, a chemical plating method), or the like can be used. Among these plating methods, electrolytic plating and electroless plating are preferred, and in the case where electricity can be applied to the place where plating is to be performed, electrolytic plating is particularly preferable from the viewpoint of productivity. The type of the metal constituting the electrode 3 is not particularly limited, and for example, copper (Cu), nickel (Ni), tin (Sn), silver (Ag), cobalt (Co), zinc (Zn), palladium ( Pd), and indium (In), etc., or alloys or salts containing the metals. The metal may be used alone or in combination of two or more. The electrode 3 is composed of a metal film formed by an electroplating method, but may be composed of a single metal film or a plurality of laminated metal films. In the solar cell of the first embodiment, the electrode 3, as shown in Fig. 1, is composed of three layers of metal films 3a, 3b, and 3c laminated. In other words, first, by performing nickel plating, the first layer of the nickel plating layer 3a is formed on the exposed surface (the surface of the transparent conductive film layer 15) of the semiconductor substrate 1 exposed from the insulating layer 2 by the opening 2a. The thickness of the nickel plating layer 3a can be, for example, 0.1 μm or more and 5 μm or less. Further, a nickel alloy plating layer may be formed instead of the nickel plating layer 3a. [0054] Next, on the nickel plating layer 3a, a second layer of the copper plating layer 3b is formed. The thickness of the copper plating layer 3b can be, for example, 5 μm or more and 50 μm or less. In the example of Fig. 1, the opening 2a is filled with a nickel plating layer 3a and a copper plating layer 3b. Further, on the copper plating layer 3b, a third layer of the tin plating layer 3c is formed. The thickness of the tin plating layer 3c can be, for example, 1 μm or more and 5 μm or less. Further, instead of the tin plating layer 3c, a nickel plating layer may be formed. In the solar cell of the first embodiment, the nickel plating layer 3a of the first layer among the three metal films 3a, 3b, and 3c constituting the electrode 3 is formed to prevent copper transition. Further, the tin plating layer 3c of the third layer is formed in order to prevent oxidation of the copper plating layer 3b of the second layer. The number of layers of the metal film constituting the electrode 3 is preferably 2 or 3, and the two-layer structure of the nickel plating layer 3a/tin plating layer 3c may be formed without forming the copper plating layer 3b. [0056] Even when the electrode 3 is composed of a single metal film, even in the case where the solar cell of the first embodiment is composed of a metal film laminated with a plurality of layers, the thickness of the electrode 3 is It is preferably 0.1 μm or more and 100 μm or less, more preferably 5 μm or more and 70 μm or less, and still more preferably 6 μm or more and 60 μm or less. When the thickness of the electrode 3 is within the above range, the plating time can be made not to be extremely long and the electric resistance can be suppressed. As described above, the method for producing a solar cell according to the first embodiment includes the step of applying the liquid resin cured by the active energy ray to the designated region by the printing method to form the insulating layer 2, so that there is no step. The necessity of selectively irradiating light to a predetermined region of the resin layer by the photomask or the necessity of removing the photocurable resin which is not cured with an organic solvent. Therefore, the manufacturing method of the solar cell of the first embodiment is simple in steps and high in mass productivity, and the environmental load is small because the organic solvent having high volatility is not used. [0058] After the electroplating step, the solar cell cells may also be subjected to a heat treatment. By applying heat treatment to the solar cell, the adhesion of the transparent conductive film layer 15 to the electrode 3 formed by the plating method can be improved, and the low contact resistance can be maintained. The conditions of the heat treatment are not particularly limited, and for example, the temperature is 50° C. or higher (80° C. or higher), 200° C. or lower (more preferably 180° C. or lower), and heating is performed for 3 minutes or longer and 60 minutes or shorter (preferably 5 minutes or longer). Heat treatment at the time of minutes or less). Examples of the method of heating the solar cell include immersion in warm water or oil, blowing of hot air, heating in a furnace, and the like. [0059] The heat treatment may be performed after forming the outermost layer among the plurality of metal films constituting the electrode 3, or after forming other layers. For example, in the case of the solar cell of the first embodiment, heat treatment may be applied after the formation of the third layer, or after the formation of the first layer or after the formation of the second layer. Furthermore, the number of times the heat treatment is applied may be 1 or a plurality of times. For example, in the solar cell of the first embodiment, one of the first layer, the second layer, and the third layer may be subjected to one heat treatment, or the first layer and the second layer may be formed. After the third layer, heat treatment was separately applied, and a total of three heat treatments were applied. [Second Embodiment] The solar cell of the second embodiment and the method of manufacturing the same are described below, but the description of the same portions as the solar cell of the first embodiment and the method of manufacturing the same is omitted. Explain mainly the different parts. The solar cell of the second embodiment shown in Figs. 8 to 10 is provided with a bus bar electrode 31 and a finger electrode 32 on the light receiving surface (the upper surface in Fig. 8) on the back side (the lower side in Fig. 8). The surface) has the back electrode 33. That is, in the light receiving surface of the solar cell of the second embodiment, as shown in FIG. 9, the linear bus bar electrode 31 is disposed, and the linear finger electrode 32 is disposed with the bus bar electrode. 31 orthogonal. Further, in the back surface of the solar cell of the second embodiment, as shown in FIG. 10, the back surface electrode 33 is disposed substantially entirely. The solar cell of the second embodiment includes a semiconductor substrate 1, a light-transmitting insulating layer 2 formed on the main surface of the light-receiving surface side of the semiconductor substrate 1, and an electrode 3 connected to the semiconductor substrate 1. (light receiving side and back side). The insulating layer 2 has an opening 2a. The electrode 3 on the light-receiving surface side is disposed in the opening 2a, and is connected to the exposed surface of the semiconductor substrate 1 exposed from the insulating layer 2 by the opening 2a, and the bus bar electrode 31 and the finger electrode 32 are formed on the light-receiving surface by the electrode 3. Further, the electrode 3 on the back side covers substantially the entire surface of the main surface on the back side of the semiconductor substrate 1, and the back surface electrode 33 is formed on the back surface by the electrode 3. In the same manner as in the case of the first embodiment, the semiconductor substrate 1 includes an n-type single crystal germanium substrate 11 formed on both main surfaces and has a concavo-convex structure called a texture, and is laminated on the n-type single crystal. The i-type amorphous germanium layer 12 (the light-receiving surface side and the back surface side) on both main surfaces of the substrate 11 and the p-type amorphous germanium layer 13 laminated on the i-type amorphous germanium layer 12 on the light-receiving surface side are An n-type amorphous germanium layer 14 laminated on the i-type amorphous germanium layer 12 on the back side, and a transparent conductive film layer laminated on the p-type amorphous germanium layer 13 and the n-type amorphous germanium layer 14, respectively 15 (light-receiving side and back side) (refer to Fig. 8). The electrode 3 on the back side is substantially connected to the entire surface of the transparent conductive film layer 15 of the semiconductor substrate 1. In addition, the electrode 3 disposed on the light-receiving surface side in the opening 2a is connected to the exposed surface of the semiconductor substrate 1 exposed from the insulating layer 2, that is, the transparent conductive film layer 15 by the opening 2a. In the second embodiment, since the transparent conductive film layer 15 is formed on the outermost layer of the semiconductor substrate 1, the exposed surface of the semiconductor substrate 1 exposed by the opening 2a is the surface of the transparent conductive film layer 15, and is in other types of layers. When it is formed on the outermost layer, the surface of the outermost layer is the exposed surface. The electrode 3 on the light-receiving surface side and the electrode 3 on the back surface side are formed of a metal film formed by a plating method. In the example of Fig. 8, as in the case of the first embodiment, the electrode 3 is composed of a metal film in which three layers are laminated. That is, the nickel plating layer 3a is laminated on the transparent conductive film layer 15, the copper plating layer 3b is laminated on the nickel plating layer 3a, and the tin plating layer 3c is laminated on the copper plating layer 3b. [0066] Next, a method of manufacturing a solar cell of the second embodiment will be described with reference to FIGS. 11 to 14. First, in the same manner as in the first embodiment, the semiconductor substrate 1 is obtained (see Fig. 11). Next, the insulating layer 2 is formed on the main surface on the light-receiving surface side of the semiconductor substrate 1 in the following manner. First, as shown in FIG. 12, a liquid resin which is cured by an active energy ray is applied to a region of a part of the main surface on the light-receiving surface side of the semiconductor substrate 1 by a printing method, and is formed of a liquid resin. Resin layer 5 (printing step). The resin layer 5 is not formed on the main surface on the back side of the semiconductor substrate 1. When the insulating layer 2 has the opening 2a, it is necessary to form the opening 2a in the insulating layer 2 when the resin layer 5 is cured by the active energy ray to form the insulating layer 2. The resin layer 5 of the pattern of the insulating layer 2 is formed in the printing step. That is, the resin layer 5 having the opening 5a and having substantially the same shape as the insulating layer 2 is formed in the printing step (see FIG. 12). After the resin layer 5 composed of a liquid resin is formed on the main surface of the light-receiving surface side of the semiconductor substrate 1, the entire resin layer 5 is irradiated with an active energy ray (for example, ultraviolet ray) to harden (harden) the liquid resin. step). Then, on the main surface on the light-receiving surface side of the semiconductor substrate 1, an insulating layer 2 composed of a cured product of a liquid resin is formed. In the resin layer 5, the insulating layer 2 having the opening 2a is formed on the main surface on the light-receiving surface side of the semiconductor substrate 1 by having the opening 5a which becomes the opening 2a after curing (see FIG. 13). A part of the surface of the transparent conductive film layer 15 on the light-receiving surface side of the semiconductor substrate 1 is exposed from the insulating layer 2 by the opening 2a. Further, in the second embodiment, as in the case of the first embodiment, the irradiation of the active energy ray (hardening of the liquid resin) in the curing step can be performed in one stage or in plural stages. get on. For example, after the liquid resin is preliminarily hardened by the irradiation of the first stage, it is hardened by the irradiation after the second stage. When the liquid resin is hardened in a plurality of stages, the liquid resin in the curing step can be prevented from flowing and the printed pattern can be stabilized, and further, the curing shrinkage of the liquid resin can be suppressed, and the semiconductor substrate which is caused by the hardening shrinkage can be reduced. Internal stress. [0070] In the second embodiment, as the light source of the active energy ray used for the irradiation in the first stage, the LED lamp (for example, a wavelength of 300 nm or 365 nm) can also suppress the liquid state as compared with the high pressure mercury lamp. It is preferable that the temperature at which the resin hardens rises. Further, the temperature of the semiconductor substrate in the hardening step is preferably 10 ° C or higher. Further, from the viewpoint of preventing the flow of the liquid resin, the temperature of the semiconductor substrate in the curing step is preferably 200 ° C or less, more preferably 150 ° C or less, and still more preferably 120 ° C or less. [0071] In the insulating layer 2, the subsequent plating function functions as a mask for preventing the formation of the plating film, and the semiconductor substrate can be improved by forming the insulating layer 2 on the main surface on the light-receiving surface side of the semiconductor substrate 1. The strength of 1 also functions as a reinforcing member that suppresses cracking or chipping of the semiconductor substrate 1. Therefore, it is possible to suppress cracking or the like of the semiconductor substrate 1 at the time of setting the jig, and to improve productivity. Further, even when the semiconductor substrate 1 is cracked or notched, the division of the semiconductor substrate 1 can be suppressed. Next, the semiconductor substrate 1 on which the insulating layer 2 is formed only on the main surface on the light-receiving surface side is subjected to electroplating (electroplating step). The main surface on the light-receiving surface side of the semiconductor substrate 1 is covered with the insulating layer 2, and the opening 2a is provided in a portion where the electrode 3 is to be formed, and the semiconductor exposed from the insulating layer 2 by the opening 2a is provided on the main surface on the light-receiving surface side. The exposed surface of the substrate 1 is plated to form the electrode 3. Therefore, the electrode 3 connected to the exposed surface of the semiconductor substrate 1 is formed by the plating method in the opening 2a of the insulating layer 2 (see FIGS. 8 and 14). The electrode 3 is formed by applying a substantially full plating to the main surface on the back side. Then, the electrode 3 formed by the plating method forms the bus bar electrode 31 and the finger electrode 32 on the light receiving surface (the upper surface in FIG. 8) of the semiconductor substrate 1, and the back surface (the lower surface in FIG. 8) The back electrode 33 is formed. The electrode 3 is composed of a metal film formed by an electroplating method, but may be composed of a single metal film or a plurality of laminated metal films. In the solar cell of the second embodiment, the electrode 3, as shown in Fig. 8, is composed of three layers of metal films 3a, 3b, and 3c which are laminated. In other words, first, by performing nickel plating, a nickel plating layer 3a of the first layer is formed on the exposed surface (surface of the transparent conductive film layer 15) of the semiconductor substrate 1 exposed from the insulating layer 2 by the opening 2a (refer to FIG. 14). ). Next, on the nickel plating layer 3a, a second layer of the copper plating layer 3b is formed. Further, on the copper plating layer 3b, a third layer of the tin plating layer 3c is formed. [0074] After the electroplating step, as in the case of the first embodiment, the solar cell cells may be subjected to heat treatment. By applying heat treatment to the solar cell, the adhesion of the transparent conductive film layer 15 to the electrode 3 formed by the plating method can be improved, and the low contact resistance can be maintained. This heat treatment may be performed after forming the outermost layer among the plurality of metal films constituting the electrode 3, as in the case of the first embodiment, or after forming another layer. Further, the number of times of the heat treatment is similar to that of the first embodiment, and may be one or a plurality of times. Further, the first and second embodiments described above show an example of the present invention, and the present invention is not limited to the first and second embodiments. Further, in the first and second embodiments, various changes and modifications may be added without departing from the scope of the invention, and such modifications and modifications may be included in the invention. For example, the materials, dimensions, and the like exemplified in the first and second embodiments are examples, and the present invention is not limited thereto, and can be appropriately modified within the scope of the effects of the present invention. Further, in the case where the insulating layer 2 is not light-transmitting, it is necessary to peel the insulating layer 2 after the plating step in order to be used as a solar cell, but the insulating layer 2 of the solar cell of the first and second embodiments is used. Since it is light transmissive, it is not necessary to peel off the insulating layer 2. Thus, the manufacturing steps of the solar cell can be simplified. Further, in the first and second embodiments, the i-type amorphous germanium layer 12, the p-type amorphous germanium layer 13, and the n-type amorphous germanium layer 14 are laminated on the n-type single crystal germanium substrate 11. Although the semiconductor substrate 1 is formed, the n-type polycrystalline germanium substrate, the p-type single crystal germanium substrate, the p-type polycrystalline germanium substrate, or the like may be used instead of the n-type single crystal germanium substrate 11. Further, in the first and second embodiments, the p-type amorphous germanium layer 13 is disposed on the light-receiving surface side of the n-type single crystal germanium substrate 11, and the n-type amorphous germanium layer 14 is disposed on the back surface side. On the contrary, the n-type amorphous germanium layer 14 is disposed on the light-receiving surface side of the n-type single crystal germanium substrate 11, and the p-type amorphous germanium layer 13 is disposed on the back surface side. Alternatively, a p-type doped layer may be disposed on the light-receiving surface side of the n-type single crystal germanium substrate 11, and a dummy-doped layer of the same conductivity type as that of the n-type single crystal germanium substrate 11 may be disposed in a comb shape on the back surface side. Conductive type impurity-doped layer (so-called back-junction type solar cell). [Examples] The present invention will be more specifically described below by showing examples. (Example 1) An excitation frequency of 13.56 MHz was used on both main surfaces of an n-type single crystal germanium substrate (the shape of the substrate, which is a square shape of 156 mm) formed on both main surfaces of the uneven structure called a texture. Plasma CVD, at a substrate temperature of 200 ° C or lower, an i-type amorphous ruthenium layer is formed, and a p-type amorphous ruthenium layer is formed on the i-type amorphous ruthenium layer on the light-receiving surface side, and an i-type Å on the back side is formed. An n-type amorphous ruthenium layer is formed on the crystalline ruthenium layer. [0080] In the formation of the i-type amorphous ruthenium layer, decane diluted with hydrogen (SiH) is used. ₄ As a material gas, the deposition rate of the i-type amorphous ruthenium layer was set to about 0.3 nm/s. Further, in the formation of the p-type amorphous ruthenium layer, the above-mentioned source gas is used, and diborane diluted with hydrogen (B) is simultaneously used. ₂ H ₆ As a doping gas; when the n-type amorphous ruthenium layer is formed, the above-mentioned source gas is used, and phosphine diluted with hydrogen (PH) is simultaneously used. ₃ ) as a doping gas. Next, an ITO thin film of a transparent conductive film layer was formed on each of the p-type amorphous germanium layer and the n-type amorphous germanium layer by sputtering to obtain a semiconductor substrate. Use argon (Ar) and oxygen (O) in the carrier gas ₂ Mixed gas (O ₂ Concentration 0.25%), film formation pressure 13.3×10 ^-1 Sputtering of the ITO film was carried out under conditions of Pa and output of 20 W (film formation rate: 5 nm/min). Next, a screen-printing plate and a photocurable resin composition (grade name: HMR-218 (alkenyl resin composition) manufactured by Showa Denko Co., Ltd.) and a viscosity of 90 Pa·s at 25.0 ° C) were used. Screen printing is performed, and a photocurable resin composition is applied to the both main surfaces of the semiconductor substrate in a film form to form a resin layer composed of a photocurable resin composition. The photocurable resin composition is applied to a portion of the main surface of the semiconductor substrate where the electrode is to be formed without applying a photocurable resin composition, and a portion other than the portion where the electrode is to be formed is formed. A portion of the electrode has a resin layer of a pattern of an insulating layer of the opening. After the resin layer is formed, the resin layer is irradiated with light by a high-pressure mercury lamp exposure machine to cure the photocurable resin composition to form an insulating layer. Thereby, an insulating layer having an opening at a portion where the electrode should be formed is formed on both main faces of the semiconductor substrate. The temperature of the semiconductor substrate when the resin layer was irradiated with light by a high-pressure mercury lamp exposure machine and the photocurable resin composition was cured was measured by a non-contact type thermometer to be 60 °C. In addition, the irradiation conditions of the high-pressure mercury lamp exposure machine are measured values at a wavelength of 365 nm, and the maximum illuminance during irradiation is 200 mW/cm. ² The accumulated exposure is 1000 mJ/cm ² . Next, electrolytic plating is applied to both main surfaces of the semiconductor substrate, and an electrode connected to the exposed surface of the semiconductor substrate exposed from the insulating layer by the opening is formed in the opening of the insulating layer. The electrolytic plating is performed in three stages of nickel plating, copper plating, and tin plating, and an electrode having a width of about 40 μm (a bus bar electrode and a finger electrode) formed of a three-layer metal film such as a nickel plating layer, a copper plating layer, or a tin plating layer is formed. . Thereby, the same solar cell as that shown in Fig. 1 can be obtained. Further, the conditions of electrolytic plating are as follows. First, use electrolytic nickel plating solution at 0.5A/dm ² After electroplating was carried out for 15 minutes under the conditions of a temperature of 40 ° C, it was washed with warm water and then washed with cold water. Secondly, use electrolytic copper plating solution at 3A/dm ² After electroplating was carried out for 7 minutes under the conditions of room temperature, it was washed with cold water. After that, use electrolytic tin plating solution at 2.5A/dm ² After electroplating was carried out for 7 minutes under the conditions of room temperature, it was washed with cold water. (Example 2) A solar cell similar to that shown in Fig. 1 was produced in the same manner as in Example 1 except for the following two points. First, the difference at the first point is as follows. In Example 1, the electrode formed in the electroplating step had a width of about 40 μm, but in Example 2, it was about 55 μm. Second, the difference at the second point is as follows. In the first embodiment, in the curing step, the resin layer is irradiated with light in one step, and the photocurable resin composition is cured in one step. However, in the second embodiment, in the curing step, the resin layer is divided into two stages of irradiation light. The photocurable resin composition is divided into two stages of hardening. Specifically, in the second embodiment, the first stage of light irradiation is performed using an LED lamp (wavelength: 365 nm) as a light source, and the second stage of light irradiation is performed by using a high pressure mercury lamp exposure machine as a light source. The light irradiation condition by the LED lamp is measured at a wavelength of 365 nm, and the maximum illumination during irradiation is 500 mW/cm. ² The accumulated exposure is 500 mJ/cm ² The temperature of the semiconductor substrate when the light was irradiated and the photocurable resin composition was cured was measured by a non-contact type thermometer to be 35 °C. [0088] The irradiation condition of the high-pressure mercury lamp exposure machine is a measured value at a wavelength of 365 nm, and the maximum illuminance during irradiation is 200 mW/cm. ² The accumulated exposure is 1000mJ/cm ² The temperature of the semiconductor substrate when the light was irradiated and the photocurable resin composition was cured was 60 ° C after measurement by a non-contact type thermometer. The irradiation with the LED lamp (wavelength 365 nm) is performed in advance before the irradiation by the high-pressure mercury lamp exposure machine, and the flow of the resin layer is reduced and the width of the resin layer is reduced, and as a result, the width of the electrode is increased. .

[0089]

1‧‧‧Semiconductor substrate

2‧‧‧Insulation

2a‧‧‧ openings

3‧‧‧Electrode

3a‧‧‧ Nickel plating

3b‧‧‧copper plating

3c‧‧‧ tin plating

5‧‧‧ resin layer

5a‧‧‧ openings

11‧‧‧n type single crystal germanium substrate

12‧‧‧i type amorphous layer

13‧‧‧p-type amorphous layer

14‧‧‧n type amorphous enamel layer

15‧‧‧Transparent conductive film layer

31‧‧‧bus bar electrode

32‧‧‧ finger electrode

33‧‧‧Back electrode

1 is a cross-sectional view showing the configuration of a solar cell according to a first embodiment of the present invention. Fig. 2 is a plan view of the solar cell of Fig. 1 as seen from the side of the light receiving surface. Fig. 3 is a plan view of the solar cell of Fig. 1 as seen from the back side. 4 is a cross-sectional view showing a method of manufacturing the solar cell of FIG. 1. Fig. 5 is a cross-sectional view showing a method of manufacturing the solar cell of Fig. 1. Fig. 6 is a cross-sectional view showing a method of manufacturing the solar cell of Fig. 1. Figure 7 is a cross-sectional view showing a method of manufacturing the solar cell of Figure 1. Fig. 8 is a cross-sectional view showing the configuration of a solar cell according to a second embodiment of the present invention. Fig. 9 is a plan view of the solar cell of Fig. 8 as seen from the side of the light receiving surface. Figure 10 is a plan view of the solar cell of Figure 8 as seen from the back side. Figure 11 is a cross-sectional view showing a method of manufacturing the solar cell of Figure 8. Figure 12 is a cross-sectional view showing a method of manufacturing the solar cell of Figure 8. Figure 13 is a cross-sectional view showing a method of manufacturing the solar cell of Figure 8. Figure 14 is a cross-sectional view showing a method of manufacturing the solar cell of Figure 8.

Claims (11)

A solar cell manufacturing method comprising: a semiconductor substrate; an insulating layer formed on a main surface of the semiconductor substrate; and an electrode connected to the semiconductor substrate, wherein the insulating layer has an opening, and the electrode is disposed in the opening And a method of manufacturing a solar cell to be connected to an exposed surface of the semiconductor substrate exposed from the insulating layer by the opening, characterized in that the liquid resin cured by active energy ray is printed by a method a step of printing a resin layer formed of the liquid resin and capable of forming a pattern of the insulating layer, and applying the active energy ray to the resin layer, and applying the film to the field of a part of the main surface of the semiconductor substrate The liquid resin is cured, and a step of curing the insulating layer composed of a cured product of the liquid resin is formed on the main surface of the semiconductor substrate, and the electrode connected to the exposed surface of the semiconductor substrate is formed by electroplating. a plating step in the aforementioned opening portion of the insulating layer. The method for producing a solar cell according to the first aspect of the invention, wherein the printing method comprises a screen printing method. The method for manufacturing a solar cell according to claim 1 or 2, wherein the viscosity of the liquid resin at 25 ° C is 1 Pa. s above 200Pa. s below. The method for producing a solar cell according to the first or second aspect of the invention, wherein the thickness of the insulating layer is 5 μm or more and 100 μm or less. The method for producing a solar cell according to the first or second aspect of the invention, wherein the plating method is an electrolytic plating method or an electroless plating method. The method for producing a solar cell according to claim 1 or 2, wherein the electrode is at least 1 selected from the group consisting of copper, nickel, tin, silver, cobalt, zinc, palladium, indium, and the like. The composition of the species. The method for producing a solar cell according to the first or second aspect of the invention, wherein the thickness of the electrode is 0.1 μm or more and 100 μm or less. The method for producing a solar cell according to the first or second aspect of the invention, wherein the electrode is composed of a single metal film or a plurality of laminated metal films. The method for producing a solar cell according to the first or second aspect of the invention, wherein in the hardening step, the active energy ray is irradiated to the resin layer at a plurality of stages, and the liquid resin is hardened in a plurality of stages. The method for producing a solar cell according to the ninth aspect of the invention, wherein the irradiation of the first stage of the active energy ray is used The light source of the aforementioned active energy ray is an LED lamp. The method for producing a solar cell according to the first or second aspect of the invention, wherein, in the curing step, the temperature of the semiconductor substrate when the liquid resin is cured is 200 ° C or lower.