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TWI662367B - 負型感光性樹脂組成物、硬化膜、硬化膜的製造方法及半導體元件 - Google Patents

負型感光性樹脂組成物、硬化膜、硬化膜的製造方法及半導體元件 Download PDF

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Publication number
TWI662367B
TWI662367B TW105120412A TW105120412A TWI662367B TW I662367 B TWI662367 B TW I662367B TW 105120412 A TW105120412 A TW 105120412A TW 105120412 A TW105120412 A TW 105120412A TW I662367 B TWI662367 B TW I662367B
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TW
Taiwan
Prior art keywords
group
resin composition
photosensitive resin
ring
compound
Prior art date
Application number
TW105120412A
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English (en)
Chinese (zh)
Other versions
TW201708957A (zh
Inventor
岩井悠
小山一郎
川端健志
渋谷明規
Original Assignee
日商富士軟片股份有限公司
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Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW201708957A publication Critical patent/TW201708957A/zh
Application granted granted Critical
Publication of TWI662367B publication Critical patent/TWI662367B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14—Polymers provided for in subclass C08G
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW105120412A 2015-06-30 2016-06-29 負型感光性樹脂組成物、硬化膜、硬化膜的製造方法及半導體元件 TWI662367B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-132105 2015-06-30
JP2015132105 2015-06-30

Publications (2)

Publication Number Publication Date
TW201708957A TW201708957A (zh) 2017-03-01
TWI662367B true TWI662367B (zh) 2019-06-11

Family

ID=57608413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105120412A TWI662367B (zh) 2015-06-30 2016-06-29 負型感光性樹脂組成物、硬化膜、硬化膜的製造方法及半導體元件

Country Status (4)

Country Link
JP (1) JP6481032B2 (fr)
KR (1) KR102021305B1 (fr)
TW (1) TWI662367B (fr)
WO (1) WO2017002859A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102090449B1 (ko) * 2016-03-31 2020-03-18 아사히 가세이 가부시키가이샤 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법 및 반도체 장치
JP2018115291A (ja) * 2017-01-20 2018-07-26 株式会社クラレ 重合体粒子
CN110325912B (zh) * 2017-02-23 2023-07-14 艾曲迪微系统股份有限公司 感光性树脂组合物、图案的制造方法、固化物、层间绝缘膜、覆盖涂层、保护膜和电子部件
US20200012191A1 (en) * 2017-03-28 2020-01-09 Toray Industries, Inc. Photosensitive resin composition, cured film, element equipped with cured film, organic el display device equipped with cured film, cured film production method, and organic el display device production method
CN110692018B (zh) * 2017-05-31 2023-11-03 富士胶片株式会社 感光性树脂组合物、聚合物前体、固化膜、层叠体、固化膜的制造方法及半导体器件
KR102108848B1 (ko) * 2017-11-22 2020-05-12 한국화학연구원 감광성 폴리아믹산 유도체 수지 및 내열성 네가티브형 포토레지스트 조성물
WO2019107250A1 (fr) * 2017-11-28 2019-06-06 旭化成株式会社 Composition de résine photosensible de type négative ainsi que procédé de fabrication de celle-ci, et procédé de fabrication de motif en relief durci
WO2020032133A1 (fr) * 2018-08-09 2020-02-13 旭化成株式会社 Composition de résine photosensible et procédé de formation de motif de résine
CN112639615B (zh) * 2018-09-26 2024-12-31 富士胶片株式会社 感光性树脂组合物、固化膜、层叠体、固化膜的制造方法、半导体元件及热产碱剂
JP7592393B2 (ja) * 2019-04-09 2024-12-02 旭化成株式会社 ネガ型感光性樹脂組成物、ポリイミドの製造方法および硬化レリーフパターンの製造方法
TW202112903A (zh) * 2019-07-30 2021-04-01 日商富士軟片股份有限公司 著色樹脂組成物、膜、濾色器、固體攝像元件、圖像顯示裝置及樹脂
WO2021029019A1 (fr) 2019-08-13 2021-02-18 Ｈｄマイクロシステムズ株式会社 Composition de résine photosensible, procédé de fabrication de film durci à motifs, film durci, film isolant intercouche, couche de revêtement de couverture, film de protection de surface et composant électronique
WO2021157588A1 (fr) * 2020-02-07 2021-08-12 三菱瓦斯化学株式会社 Stratifié de thermoformage et procédé de moulage de stratifié
JP7595076B2 (ja) * 2020-06-05 2024-12-05 富士フイルム株式会社 樹脂組成物及びその製造方法並びにパターン形成用組成物の製造方法
WO2024070963A1 (fr) * 2022-09-30 2024-04-04 富士フイルム株式会社 Procédé de production de film, composition de résine photosensible, procédé de production de produit durci, produit durci et stratifié

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW536664B (en) * 1997-09-11 2003-06-11 Arch Spec Chem Inc A negatively acting photoresist composition based on polyimide precursors
TWI297810B (fr) * 2001-05-30 2008-06-11 Kaneka Corp
JP2010009052A (ja) * 2009-07-29 2010-01-14 Asahi Kasei E-Materials Corp 感光性樹脂組成物、パターン形成方法、及び半導体装置
US7648815B2 (en) * 2000-09-12 2010-01-19 Pi R&D Co., Ltd. Negative photosensitive polyimide composition and method for forming image the same
WO2013168675A1 (fr) * 2012-05-07 2013-11-14 旭化成イーマテリアルズ株式会社 Composition de résine photosensible négative, procédé de fabrication d'un motif en relief destiné au durcissement, et dispositif à semi-conducteur
TW201523152A (zh) * 2013-10-31 2015-06-16 Fujifilm Corp 積層體、有機半導體製造用套組及有機半導體製造用光阻組成物

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JP2006171019A (ja) * 2004-12-10 2006-06-29 Fuji Photo Film Co Ltd パターン形成材料の製造方法及びパターン形成材料
JP2007056196A (ja) * 2005-08-26 2007-03-08 Tokyo Institute Of Technology ポリイミド前駆体組成物、ポリイミド膜の製造方法及び半導体装置
US8354216B2 (en) 2008-07-15 2013-01-15 Eastman Kodak Company Negative-working imaging elements and methods of use
TWI413860B (zh) 2010-02-16 2013-11-01 Asahi Kasei E Materials Corp A negative photosensitive resin composition, a method for manufacturing a hardened embossed pattern, and a semiconductor device
JP6244871B2 (ja) * 2013-12-13 2017-12-13 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体樹脂組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW536664B (en) * 1997-09-11 2003-06-11 Arch Spec Chem Inc A negatively acting photoresist composition based on polyimide precursors
US7648815B2 (en) * 2000-09-12 2010-01-19 Pi R&D Co., Ltd. Negative photosensitive polyimide composition and method for forming image the same
TWI297810B (fr) * 2001-05-30 2008-06-11 Kaneka Corp
JP2010009052A (ja) * 2009-07-29 2010-01-14 Asahi Kasei E-Materials Corp 感光性樹脂組成物、パターン形成方法、及び半導体装置
WO2013168675A1 (fr) * 2012-05-07 2013-11-14 旭化成イーマテリアルズ株式会社 Composition de résine photosensible négative, procédé de fabrication d'un motif en relief destiné au durcissement, et dispositif à semi-conducteur
TW201523152A (zh) * 2013-10-31 2015-06-16 Fujifilm Corp 積層體、有機半導體製造用套組及有機半導體製造用光阻組成物

Also Published As

Publication number Publication date
TW201708957A (zh) 2017-03-01
KR20180005227A (ko) 2018-01-15
WO2017002859A1 (fr) 2017-01-05
KR102021305B1 (ko) 2019-09-16
JP6481032B2 (ja) 2019-03-13
JPWO2017002859A1 (ja) 2018-04-12

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