[go: up one dir, main page]

TWI643703B - A polishing platen for chemical mechanical polishing - Google Patents

A polishing platen for chemical mechanical polishing Download PDF

Info

Publication number
TWI643703B
TWI643703B TW104123450A TW104123450A TWI643703B TW I643703 B TWI643703 B TW I643703B TW 104123450 A TW104123450 A TW 104123450A TW 104123450 A TW104123450 A TW 104123450A TW I643703 B TWI643703 B TW I643703B
Authority
TW
Taiwan
Prior art keywords
polishing pad
carrier
polishing
protrusions
protrusion
Prior art date
Application number
TW104123450A
Other languages
Chinese (zh)
Other versions
TW201703927A (en
Inventor
蔡傅守
李昱廷
黃柏誠
謝武憲
李昆儒
林志勳
林文欽
Original Assignee
聯華電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 聯華電子股份有限公司 filed Critical 聯華電子股份有限公司
Priority to TW104123450A priority Critical patent/TWI643703B/en
Publication of TW201703927A publication Critical patent/TW201703927A/en
Application granted granted Critical
Publication of TWI643703B publication Critical patent/TWI643703B/en

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

本發明提供一種用於化學機械研磨的研磨墊載具,包含:載具本體,具有一自轉中心、本體上表面與本體側表面,其中本體上表面與本體側表面相鄰;以及複數個凸出部,平均分佈於本體側表面上,其中每一個凸出部具有一凸出部上表面,並且每一凸出部上表面與本體上表面共平面。 The present invention provides a polishing pad carrier for chemical mechanical polishing, comprising: a carrier body having a rotation center, a body upper surface and a body side surface, wherein the body upper surface is adjacent to the body side surface; and a plurality of protrusions The portions are evenly distributed on the side surface of the body, wherein each of the protrusions has a convex upper surface, and the upper surface of each of the protrusions is coplanar with the upper surface of the body.

Description

一種用於化學機械研磨的研磨墊載具 Abrasive pad carrier for chemical mechanical polishing

本發明是有關於一種用於化學機械研磨的研磨墊載具,特別是有關於改善校準之化學機械研磨的研磨墊載具。 This invention relates to a polishing pad carrier for chemical mechanical polishing, and more particularly to a polishing pad carrier for improved calibration of chemical mechanical polishing.

在製造半導體裝置時,執行在晶圓表面形成導電性膜,藉微影、蝕刻等形成佈線層之製程、及佈線層上形成層間絕緣膜之製程等,透過這些製程,在晶圓表面產生由金屬等之導電體或絕緣體構成之凹凸。近年來,以半導體積體電路之高密度化為目的,佈線微細化或多層佈線化正進展中,但就因如此,將晶圓表面之凹凸平坦化之技術漸趨重要。 When manufacturing a semiconductor device, a process of forming a conductive film on the surface of the wafer, a process of forming a wiring layer by lithography, etching, or the like, and a process of forming an interlayer insulating film on the wiring layer are performed, and the process is performed on the surface of the wafer by these processes. Concavities and convexities formed by a conductor or insulator such as metal. In recent years, in order to increase the density of semiconductor integrated circuits, wiring is becoming finer or multilayer wiring is progressing. However, the technique of flattening the unevenness on the surface of wafers is becoming more and more important.

一般將晶圓表面之凹凸平坦化之方法而言,是採用化學機械研磨技術(以下稱為CMP)。CMP是一種將晶圓的被研磨面按壓在研磨墊之研磨面之狀態下,使用分散有磨粒之漿液狀研磨劑(以下稱為研磨漿(slurry))進行研磨之技術。一般在CMP所使用之研磨裝置,研磨墊會被黏附於研磨墊載具(platen)上,同時由於方便研磨墊移除,研磨墊的尺寸會大於載具的尺寸。但目前習知之做法,係以人為主觀判斷研磨墊與載具之相對位置進行黏附,也因此導致研磨墊之中心無法準確與載具之中心對準,導致研磨過程中研磨墊無法以正圓方式旋轉,進而造成研磨製程後晶圓內點與點之間的高度 差距增加,平坦度不如預期,產品品質因此而受到影響。 Generally, a method of flattening the unevenness on the surface of a wafer is a chemical mechanical polishing technique (hereinafter referred to as CMP). CMP is a technique in which a polishing surface of a wafer is pressed against a polishing surface of a polishing pad, and a slurry-like abrasive (hereinafter referred to as a slurry) in which abrasive grains are dispersed is used for polishing. Generally, in the polishing apparatus used in CMP, the polishing pad is adhered to the polishing pad carrier, and the size of the polishing pad is larger than the size of the carrier because the polishing pad is easily removed. However, the current practice is to determine the relative position of the polishing pad and the carrier by the human subject, and thus the center of the polishing pad cannot be accurately aligned with the center of the carrier, so that the polishing pad cannot be in a perfect circle during the grinding process. Rotation, which in turn causes the height between the dots in the wafer after the polishing process The gap increased, flatness was not as good as expected, and product quality was affected.

因此,如何改善現有問題,使研磨製程的精準度提高,成為本發明討論之課題。 Therefore, how to improve the existing problems and improve the precision of the polishing process has become a subject of discussion in the present invention.

本發明提供一種用於化學機械研磨的研磨墊載具,包含:載具本體,具有一自轉中心、本體上表面與本體側表面,其中本體上表面與本體側表面相鄰;以及複數個凸出部,平均分佈於本體側表面上,其中每一個凸出部具有一凸出部上表面,並且每一凸出部上表面與本體上表面共平面。 The present invention provides a polishing pad carrier for chemical mechanical polishing, comprising: a carrier body having a rotation center, a body upper surface and a body side surface, wherein the body upper surface is adjacent to the body side surface; and a plurality of protrusions The portions are evenly distributed on the side surface of the body, wherein each of the protrusions has a convex upper surface, and the upper surface of each of the protrusions is coplanar with the upper surface of the body.

在本發明的較佳實施例中,上述之複數個凸出部包含:第一凸出部,平均分佈於本體側表面上,具有遠離載具本體之一第一凸出部側表面;第二凸出部,平均分佈於本體側表面上,具有遠離該載具本體之一第二凸出部側表面,其中第一側表面與自轉中心的最遠距離大於第二側表面與該自轉中心的最遠距離。 In a preferred embodiment of the present invention, the plurality of protrusions include: a first protrusion, evenly distributed on the side surface of the body, having a first protrusion side surface away from the carrier body; The protrusions are evenly distributed on the body side surface, and have a second protrusion side surface away from the carrier body, wherein the farthest distance between the first side surface and the rotation center is greater than the second side surface and the rotation center The farthest distance.

在本發明的較佳實施例中,上述每一個凸出部上表面具有複數個刻度。 In a preferred embodiment of the invention, the upper surface of each of the projections has a plurality of graduations.

在本發明的較佳實施例中,上述每一個刻度之間距介於0.1-1公分之間。 In a preferred embodiment of the invention, the distance between each of the above scales is between 0.1 and 1 cm.

在本發明的較佳實施例中,上述每一個刻度之間距相同。 In a preferred embodiment of the invention, each of the above scales is the same distance.

在本發明的較佳實施例中,上述複數個凸出部與載具本體為一體成型。 In a preferred embodiment of the invention, the plurality of projections are integrally formed with the carrier body.

在本發明的較佳實施例中,上述之載具本體之直徑介於70-80公分之間,並且凸出部與自轉中心之最遠距離小於43公分之間。 In a preferred embodiment of the invention, the carrier body has a diameter between 70 and 80 cm and a distance between the projection and the center of rotation is less than 43 cm.

因此,本發明提供之本發明是在提供一種用於化學機械研磨的研磨墊載具,可以使研磨墊與載具之間具有方便操作之對準基準,同時還可針對不同尺寸之研磨墊提供不同之 基準,解決習知技術中CMP製程中研磨墊之轉動偏移或是晃動造成之研磨漿的分佈不均所導致之研磨效果不佳,進一步提高CMP製程的精準度與產品良率。 Accordingly, the present invention provides a polishing pad carrier for chemical mechanical polishing that provides an easy-to-operate alignment between the polishing pad and the carrier, while also providing polishing pads of different sizes. Different The benchmark solves the problem that the polishing effect caused by the unevenness of the polishing pad or the uneven distribution of the slurry caused by the shaking in the CMP process in the conventional technology further improves the precision of the CMP process and the product yield.

1‧‧‧研磨平台 1‧‧‧ Grinding platform

2‧‧‧基板平台 2‧‧‧Substrate platform

3‧‧‧支架 3‧‧‧ bracket

11‧‧‧研磨墊載具 11‧‧‧ polishing pad carrier

12‧‧‧研磨墊 12‧‧‧ polishing pad

13‧‧‧研磨漿供應管 13‧‧‧Brush supply pipe

21‧‧‧基板載具 21‧‧‧Substrate carrier

22‧‧‧基板 22‧‧‧Substrate

111‧‧‧載具本體 111‧‧‧ Vehicle body

111a‧‧‧自轉中心 111a‧‧‧Revolution Center

111s‧‧‧本體側表面 111s‧‧‧ body side surface

111t‧‧‧本體上表面 111t‧‧‧ body upper surface

112‧‧‧凸出部 112‧‧‧ protruding parts

112t‧‧‧凸出部上表面 112t‧‧‧Upper surface of the projection

121‧‧‧溝槽 121‧‧‧ trench

131‧‧‧研磨漿 131‧‧‧Blurry

1121‧‧‧第一凸出部 1121‧‧‧First bulge

1121s‧‧‧第一凸出部側表面 1121s‧‧‧First bulge side surface

1122‧‧‧第二凸出部 1122‧‧‧second bulge

1122s‧‧‧第二凸出部側表面 1122s‧‧‧Second bulge side surface

1121p、1122p‧‧‧端點 1121p, 1122p‧‧‧ endpoint

S12‧‧‧研磨面 S12‧‧‧Grinding surface

為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉數個較佳實施例,並配合所附圖式,作詳細說明如下:圖1係依據本發明之一實施例所繪製之CMP機台結構示意圖;圖2係依據圖1所示之實施例繪製之CMP機台進行CMP製程時之結構示意圖;圖3A係依據本發明之一實施例所繪製之研磨墊載具俯視結構示意圖;圖3B-3C係依據圖3A之實施例繪製之不同尺寸研磨墊放置於研磨墊載具後之相對位置側視圖;以及圖4A-4B係依據本發明之不同實施例所繪製之研磨墊載具俯視結構示意圖。 The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the invention. FIG. 2 is a schematic view showing the structure of a CMP machine according to the embodiment shown in FIG. 1 when the CMP process is performed; FIG. 3A is a polishing pad according to an embodiment of the present invention. Figure 3B-3C is a side view of the relative position of the different size polishing pads placed in the polishing pad carrier according to the embodiment of Figure 3A; and Figures 4A-4B are drawn in accordance with different embodiments of the present invention A schematic view of the polishing pad carrier in a top view.

本發明是在提供一種用於化學機械研磨的研磨墊載具,使研磨墊與載具之間具有方便操作之對準基準,進而使研磨墊與載具在研磨過程中能穩定、平穩地旋轉,使研磨漿平均分佈於研磨墊上,達到較好之研磨效果。為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文以實施例配合所附圖式,做詳細說明。 The invention provides a polishing pad carrier for chemical mechanical polishing, which has an easy-to-operate alignment reference between the polishing pad and the carrier, thereby enabling the polishing pad and the carrier to rotate stably and smoothly during the grinding process. The slurry is evenly distributed on the polishing pad to achieve a better grinding effect. The above and other objects, features, and advantages of the present invention will become more apparent and understood.

如圖1所示,CMP機台包含有研磨平台1與基板平台2,研磨墊載具11位於研磨平台1之上,每一研磨墊載具11上設置有一研磨墊12,而對應每一研磨墊12設置有一研磨漿供應管13用於供應CMP製程中所需之研磨漿131於研磨墊12與所欲研磨之基板表面之間。研磨墊12與研磨墊載 具11之間係以黏貼方式固定,研磨墊12之研磨面S12上具有複數條溝槽121,溝槽121係用以使研磨漿131能停留並平均分佈於於研磨墊12之研磨面S12。基板平台2則包含基板載具21用以固定基板於CMP製程中,支架3位於研磨平台1與基板平台2約略中心位置且相互對應,用以支撐包含基板載具21之基板平台2於研磨平台1上。CMP機台尚有其他元件結構,如廢水回收槽、引流管線、偵測孔、晶圓換片器等,由於與習知技術類似,因此不做贅述或繪示。 As shown in FIG. 1 , the CMP machine includes a polishing platform 1 and a substrate platform 2 . The polishing pad carrier 11 is located on the polishing platform 1 , and each polishing pad carrier 11 is provided with a polishing pad 12 corresponding to each polishing. The pad 12 is provided with a slurry supply tube 13 for supplying the slurry 131 required in the CMP process between the polishing pad 12 and the surface of the substrate to be polished. Polishing pad 12 and polishing pad The strips 11 are fixed by adhesion. The polishing surface S12 of the polishing pad 12 has a plurality of grooves 121 for allowing the slurry 131 to stay and evenly distributed on the polishing surface S12 of the polishing pad 12. The substrate platform 2 includes a substrate carrier 21 for fixing the substrate in the CMP process, and the bracket 3 is located at approximately the center of the polishing platform 1 and the substrate platform 2 and corresponding to each other for supporting the substrate platform 2 including the substrate carrier 21 on the polishing platform. 1 on. The CMP machine has other component structures, such as waste water recovery tanks, drainage lines, detection holes, wafer changers, etc., which are similar to the prior art and therefore are not described or illustrated.

在CMP製程中,如圖2所示,基板載具21裝載好基板22後,所欲研磨之基板22表面與研磨墊12之研磨面S12相接觸,在覆蓋有研磨漿131之研磨面S12上進行CMP。圖3A與4A-4B是依據本發明之不同實施例所繪製之研磨墊載具11俯視結構示意圖,而圖3B與3C則是依據圖3A之實施例繪製之不同尺寸之研磨墊12放置於研磨墊載具11後之相對位置側視圖。 In the CMP process, as shown in FIG. 2, after the substrate carrier 21 is loaded with the substrate 22, the surface of the substrate 22 to be polished is in contact with the polishing surface S12 of the polishing pad 12, on the polishing surface S12 covered with the slurry 131. Perform CMP. 3A and 4A-4B are top plan views of a polishing pad carrier 11 according to various embodiments of the present invention, and FIGS. 3B and 3C are polishing pads 12 of different sizes drawn according to the embodiment of FIG. 3A. A side view of the relative position of the pad carrier 11 afterwards.

在本發明之第一實施例中,如圖3A所示之研磨墊載具11之俯視圖,研磨墊載具11具有一載具本體111以及複數個凸出部112。載具本體111為圓形,並且其直徑介於70-80公分之間,具有一自轉中心111a(在此實施例中載具本體111之自轉中心111a即為其圓心)、一本體上表面111t以及一本體側表面111s,其中本體上表面111t與本體側表面111s相鄰,並且本體上表面為111t為與研磨墊12黏貼之表面。研磨墊載具11之半徑會小於研磨墊12之半徑,以方便卸載、更換研磨墊12。複數個凸出部112平均分佈地形成於載具本體111之本體側表面111s上,並且每一凸出部112都具有一個凸出部上表面112t,凸出部上表面112t與本體上表面111t共平面。為能使研磨墊載具11在CMP製程中,轉動時能避免晃動而影響研磨漿131的分佈,導製研磨效果不佳,因此凸出部112係成對地形成於載具本體111直徑的兩端, 並且為雙數個並且/或對稱地形成於載具本體111之本體側表面111s上。在此實施例中,為能配合不同大小之研磨墊12的使用,同時達到有效對準並黏貼研磨墊載具11與研磨墊12之目的,如圖3A所示,凸出部112具有不同尺寸大小之複數個第一凸出部1121以及複數個第二凸出部1122,其中第一凸出部1121之尺寸小於第二凸出部1122之尺寸。 In the first embodiment of the present invention, as shown in the top view of the polishing pad carrier 11 shown in FIG. 3A, the polishing pad carrier 11 has a carrier body 111 and a plurality of projections 112. The carrier body 111 is circular and has a diameter of between 70 and 80 cm, and has a rotation center 111a (in this embodiment, the rotation center 111a of the carrier body 111 is its center), and a body upper surface 111t. And a body side surface 111s, wherein the body upper surface 111t is adjacent to the body side surface 111s, and the body upper surface is 111t is a surface to which the polishing pad 12 is adhered. The radius of the polishing pad carrier 11 will be smaller than the radius of the polishing pad 12 to facilitate unloading and replacing the polishing pad 12. The plurality of protrusions 112 are evenly distributed on the body side surface 111s of the carrier body 111, and each of the protrusions 112 has a protrusion upper surface 112t, the protrusion upper surface 112t and the body upper surface 111t Coplanar. In order to enable the polishing pad carrier 11 to avoid sloshing during rotation during the CMP process, the distribution of the slurry 131 is affected, and the polishing effect is poor. Therefore, the protrusions 112 are formed in pairs on the diameter of the carrier body 111. Both ends, And it is formed in a plurality of and/or symmetrically on the body side surface 111s of the carrier body 111. In this embodiment, in order to cooperate with the use of different sizes of the polishing pad 12, and at the same time achieve the purpose of effectively aligning and adhering the polishing pad carrier 11 and the polishing pad 12, as shown in FIG. 3A, the projections 112 have different sizes. The first plurality of protrusions 1121 and the plurality of second protrusions 1122 are sized, wherein the size of the first protrusions 1121 is smaller than the size of the second protrusions 1122.

在此實施例中,每一第一凸出部1121具有一遠離本體側表面111s之第一凸出部側表面1121s,並且該第一凸出部側表面1121s上具有一與載具本體111自轉中心111a之最遠端點1121p,第一凸出部1121之尺寸係經由端點1121p與本體側表面111s之最短直線距離決定;同樣,每一第二凸出部1122具有一遠離本體側表面111s之第二凸出部側表面1122s,並且第二凸出部側表面1122s上具有一與載具本體111圓心111a之最遠端點1122p,第二凸出部1122之尺寸係經由與本體側表面111s之最短直線距離決定。因此第一凸出部1121之尺寸小於第二凸出部之尺寸1122,亦即第一凸出部1121之端點1121p到本體側表面111s之最短直線距離小於第二凸出部1122之端點1122p到本體側表面111s之最短直線距離。第一凸出部1121與第二凸出部1122之尺寸可以依需要做調整,例如最小尺寸可以介於0.1-1公分之間,而不同凸出部之尺寸差異可以介於0.1-1公分之間。在此實施例中,第一凸出部1121之尺寸為0.5公分,而第二凸出部1122之尺寸為1公分。在本發明之不同實施例中,凸出部112可以包含第三凸出部平均並且/或對稱地形成於載具本體111之本體側表面111s上,並具有不同於第一凸出部1121與第二凸出部1122之尺寸大小。雖然本實施例使用圓弧形做為凸出部112的形狀,但其形狀可依狀況調整,在本發明另一實施例中,其形狀長方形。 In this embodiment, each of the first protrusions 1121 has a first protrusion side surface 1121 s away from the body side surface 111s, and the first protrusion side surface 1121s has a rotation with the carrier body 111. The distal end point 1121p of the center 111a, the size of the first protrusion portion 1121 is determined by the shortest linear distance from the end surface 1121p and the body side surface 111s; likewise, each second protrusion 1122 has a distance from the body side surface 111s. The second protrusion side surface 1122s, and the second protrusion side surface 1122s has a most distal point 1122p with the center 111a of the carrier body 111, and the second protrusion 1122 is dimensioned via the body side surface The shortest straight line distance of 111s is determined. Therefore, the size of the first protruding portion 1121 is smaller than the size 1122 of the second protruding portion, that is, the shortest linear distance from the end point 1121p of the first protruding portion 1121 to the body side surface 111s is smaller than the end point of the second protruding portion 1122. The shortest linear distance from 1122p to the body side surface 111s. The sizes of the first protrusions 1121 and the second protrusions 1122 can be adjusted as needed. For example, the minimum size can be between 0.1 and 1 cm, and the difference of the size of the different protrusions can be between 0.1 and 1 cm. between. In this embodiment, the first projection 1121 has a size of 0.5 cm, and the second projection 1122 has a size of 1 cm. In various embodiments of the present invention, the protrusions 112 may include third protrusions that are formed on the body side surface 111s of the carrier body 111 on average and/or symmetrically, and have different from the first protrusions 1121 and The size of the second protrusion 1122. Although the present embodiment uses the circular arc shape as the shape of the convex portion 112, the shape thereof can be adjusted depending on the condition, and in another embodiment of the present invention, the shape is rectangular.

另外,第一凸出部1121與第二凸出部1122分別 平均分部於本體側表面111s上,因此能避免CMP製程中,研磨墊載具11轉動時出現晃動,同時能針對不同尺寸的研磨墊12提供不同之較準基準。如圖3B-3C所示之研磨墊12黏置於研磨墊載具11上之側視圖,依據研磨墊12之尺寸,將研磨墊12之側面與研磨墊載具11之第一凸出部側表面1121s或第二凸出部側表面1122s對齊,簡單有效的使研磨墊12準確地黏附於研磨墊載具11上,以解決習知技術之問題,有效提高CMP製程之精準度。並且結構上凸出部112之凸出部上表面112t與本體上表面111t共平面,因此在CMP製程中,研磨漿131被研磨墊12與研磨墊載具11轉動過程中甩出時,不會殘留在凸出部112與載具本體12之間,影響CMP效果。 In addition, the first protruding portion 1121 and the second protruding portion 1122 are respectively The average portion is on the body side surface 111s, so that sloshing when the polishing pad carrier 11 is rotated during the CMP process can be avoided, and different calibration standards can be provided for the different sizes of the polishing pad 12. 3B-3C is a side view of the polishing pad 12 adhered to the polishing pad carrier 11, according to the size of the polishing pad 12, the side of the polishing pad 12 and the first protruding side of the polishing pad carrier 11 The surface 1121s or the second protrusion side surface 1122s are aligned, and the polishing pad 12 is simply and effectively adhered to the polishing pad carrier 11 to solve the problems of the prior art and effectively improve the precision of the CMP process. And the convex upper surface 112t of the structural protrusion 112 is coplanar with the upper surface 111t of the body, so in the CMP process, when the polishing slurry 131 is pulled out by the polishing pad 12 and the polishing pad carrier 11, it will not It remains between the projection 112 and the carrier body 12, affecting the CMP effect.

在本發明之第二與第三實施例中,如圖4A與4B所示之研磨墊載具11之俯視圖,為簡化說明,與前述實施例相同之元件將沿用同樣的標號。研磨墊載具11具有一載具本體111、複數個凸出部112、自轉中心111a(在此實施例中載具本體111之自轉中心111a即為其圓心)、本體上表面111t以及一本體側表面111s,各元件之相對位置與前一實施例相同,在此不做贅述。複數個凸出部112平均分佈地形成於載具本體111之本體側表面111s上,並且每一凸出部112都具有一個凸出部上表面112t,凸出部上表面112t與本體上表面111t共平面。為能使研磨墊載具11在CMP製程中,轉動時能避免晃動而影響研磨漿131的分佈,導製研磨效果不佳,因此凸出部112係成對地形成於載具本體111直徑的兩端,並且為雙數個、對稱地形成於載具本體111之本體側表面111s上。第二與第三實施例提供之研磨墊載具11均具有4個平均分佈的凸出部112,並且為能配合不同大小之研磨墊12的使用,凸出部112上可以具有不同之刻度。如圖4A所示,凸出部112上刻畫或標記有不同尺寸大小之複數個刻度,每一刻度的表示方法可以是具有不同顏色,相同顏色代表相同之研 磨墊尺寸;亦或如圖4B所示,凸出部112刻畫或標示有不同標號,相同標號代表相同之研磨墊尺寸。凸出部112之形狀、刻度間距可以依情況做調整,如圖4A之實施例為圓弧型,而圖4B則相較於圖4A接近方形。刻度間距可以介於0.1-1公分之間。在第二實施例中,最小刻度代表半徑比研磨墊載具11多0.5公分之研磨墊12的尺寸大小,刻度間距皆為0.5公分;在第三實施例中,最小刻度(圖4B中的刻度1)代表半徑比研磨墊載具11多半吋之研磨墊12的尺寸大小,刻度間距皆為半吋。 In the second and third embodiments of the present invention, as shown in the top view of the polishing pad carrier 11 shown in Figs. 4A and 4B, the same reference numerals will be used for the same elements as those of the foregoing embodiment for simplicity of explanation. The polishing pad carrier 11 has a carrier body 111, a plurality of protrusions 112, a rotation center 111a (in this embodiment, the rotation center 111a of the carrier body 111 is a center thereof), a body upper surface 111t, and a body side. The relative position of each element is the same as that of the previous embodiment, and will not be described herein. The plurality of protrusions 112 are evenly distributed on the body side surface 111s of the carrier body 111, and each of the protrusions 112 has a protrusion upper surface 112t, the protrusion upper surface 112t and the body upper surface 111t Coplanar. In order to enable the polishing pad carrier 11 to avoid sloshing during rotation during the CMP process, the distribution of the slurry 131 is affected, and the polishing effect is poor. Therefore, the protrusions 112 are formed in pairs on the diameter of the carrier body 111. Both ends, and a plurality of them are symmetrically formed on the body side surface 111s of the carrier body 111. The polishing pad carriers 11 provided in the second and third embodiments each have four evenly distributed projections 112, and the projections 112 can have different graduations for use with different sizes of the polishing pads 12. As shown in FIG. 4A, the protrusions 112 are marked or marked with a plurality of scales of different sizes, and each scale can be represented by different colors, and the same color represents the same research. The size of the sanding pad; or as shown in FIG. 4B, the projections 112 are depicted or marked with different numbers, and the same reference numerals represent the same polishing pad size. The shape and the scale pitch of the projections 112 can be adjusted as appropriate, as shown in the embodiment of FIG. 4A as a circular arc, and FIG. 4B is nearly square compared to FIG. 4A. The scale spacing can be between 0.1 and 1 cm. In the second embodiment, the minimum scale represents the size of the polishing pad 12 having a radius of 0.5 cm more than the polishing pad carrier 11, and the scale pitch is 0.5 cm; in the third embodiment, the minimum scale (the scale in Fig. 4B) 1) The size of the polishing pad 12 representing a radius of more than a half of the polishing pad carrier 11 is a half turn.

本發明提供之研磨墊載具,凸出部112與載具本體111之間可以是一體成型,或是凸出部額外形成在載具本體111上。並且為能使研磨過程中達到較好的效果,凸出部112之尺寸較佳小於8公分,舉例來說,配合使用直徑70公分之載具本體111,凸出部112之最遠端點到載具本體111之圓心111a之直線距離較佳小於43公分。 The polishing pad carrier provided by the present invention may be integrally formed between the protruding portion 112 and the carrier body 111, or the protruding portion may be additionally formed on the carrier body 111. And in order to achieve a better effect in the grinding process, the size of the protruding portion 112 is preferably less than 8 cm. For example, the carrier body 111 having a diameter of 70 cm is used in combination with the most distal point of the protruding portion 112. The linear distance of the center 111a of the carrier body 111 is preferably less than 43 cm.

因此本發明提供之本發明是在提供一種用於化學機械研磨的研磨墊載具,可以使研磨墊與載具之間具有方便操作之對準基準,同時還可針對不同尺寸之研磨墊提供不同之基準,解決習知技術中CMP製程中研磨墊之轉動偏移或是晃動造成之研磨漿的分佈不均所導致之研磨效果不佳,進一步提高CMP製程的精準度與產品良率。 SUMMARY OF THE INVENTION Accordingly, the present invention is directed to an abrasive pad carrier for chemical mechanical polishing that provides an easy alignment of the polishing pad to the carrier while providing different polishing pads of different sizes. The benchmark is to solve the problem that the polishing effect caused by the unevenness of the polishing pad caused by the rotation offset or the sloshing of the polishing pad in the CMP process in the conventional technology is further improved, and the precision and product yield of the CMP process are further improved.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明。任何該領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed above by way of example, it is not intended to limit the invention. Anyone having ordinary knowledge in the field can make some changes and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Claims (7)

一種用於化學機械研磨的研磨墊載具,包含:一載具本體,具有一自轉中心、一本體上表面與一本體側表面,其中該本體上表面與該本體側表面相鄰;以及複數個凸出部,平均分佈於該本體側表面上,其中每一該複數個凸出部具有一凸出部上表面,並且每一該凸出部上表面與該本體上表面共平面。 A polishing pad carrier for chemical mechanical polishing, comprising: a carrier body having a rotation center, a body upper surface and a body side surface, wherein the body upper surface is adjacent to the body side surface; and a plurality of The protrusions are evenly distributed on the side surface of the body, wherein each of the plurality of protrusions has a convex upper surface, and each of the protrusion upper surfaces is coplanar with the upper surface of the body. 如申請專利範圍第1項所述之研磨墊載具,其中該複數個凸出部包含:一第一凸出部,平均分佈於該本體側表面上,具有遠離該載具本體之一第一凸出部側表面;一第二凸出部,平均分佈於該本體側表面上,具有遠離該載具本體之一第二凸出部側表面,其中該第一側表面與該自轉中心的最遠距離大於該第二側表面與該自轉中心的最遠距離。 The polishing pad carrier of claim 1, wherein the plurality of protrusions comprise: a first protrusion, evenly distributed on the side surface of the body, having a first distance away from the carrier body a protrusion side surface; a second protrusion portion evenly distributed on the body side surface, having a second protrusion side surface away from the carrier body, wherein the first side surface and the rotation center are the most The distance is greater than the furthest distance of the second side surface from the center of rotation. 如申請專利範圍第1項所述之研磨墊載具,其中每一該複數個凸出部上表面具有複數個刻度。 The polishing pad carrier of claim 1, wherein the upper surface of each of the plurality of protrusions has a plurality of scales. 如申請專利範圍第3項所述之研磨墊載具,其中每一該複數個刻度之間距介於0.1-1公分之間。 The polishing pad carrier of claim 3, wherein the distance between each of the plurality of scales is between 0.1 and 1 cm. 如申請專利範圍第3項所述之研磨墊載具,其中每一該複數個刻度之間距相同。 The polishing pad carrier of claim 3, wherein each of the plurality of scales has the same distance between them. 如申請專利範圍第1項所述之研磨墊載具,其中該複數個凸出部與該載具本體為一體成型。 The polishing pad carrier of claim 1, wherein the plurality of protrusions are integrally formed with the carrier body. 如申請專利範圍第1項所述之研磨墊載具,其中該載具本體之直徑介於70-80公分之間,並且該凸出部與該自轉中心之最遠距離小於43公分之間。 The polishing pad carrier of claim 1, wherein the carrier body has a diameter of between 70 and 80 cm and a distance between the projection and the rotation center is less than 43 cm.
TW104123450A 2015-07-20 2015-07-20 A polishing platen for chemical mechanical polishing TWI643703B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW104123450A TWI643703B (en) 2015-07-20 2015-07-20 A polishing platen for chemical mechanical polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104123450A TWI643703B (en) 2015-07-20 2015-07-20 A polishing platen for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
TW201703927A TW201703927A (en) 2017-02-01
TWI643703B true TWI643703B (en) 2018-12-11

Family

ID=58608799

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104123450A TWI643703B (en) 2015-07-20 2015-07-20 A polishing platen for chemical mechanical polishing

Country Status (1)

Country Link
TW (1) TWI643703B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0943397A2 (en) * 1998-03-16 1999-09-22 Speedfam Co., Ltd. Platen of polishing apparatus and method of adhesion of polishing pad
JP2004259814A (en) * 2003-02-25 2004-09-16 Nec Kansai Ltd Fixing mechanism of polishing pad
TW201521960A (en) * 2013-07-01 2015-06-16 Ebara Corp Polishing apparatus, polishing pad positioning method, and polishing pad

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0943397A2 (en) * 1998-03-16 1999-09-22 Speedfam Co., Ltd. Platen of polishing apparatus and method of adhesion of polishing pad
JP2004259814A (en) * 2003-02-25 2004-09-16 Nec Kansai Ltd Fixing mechanism of polishing pad
TW201521960A (en) * 2013-07-01 2015-06-16 Ebara Corp Polishing apparatus, polishing pad positioning method, and polishing pad

Also Published As

Publication number Publication date
TW201703927A (en) 2017-02-01

Similar Documents

Publication Publication Date Title
JP4147330B2 (en) Polishing pad and method of making a polishing pad having an elongated microcolumn
US6783436B1 (en) Polishing pad with optimized grooves and method of forming same
KR101412874B1 (en) Manufacture and method of making the same
US9399274B2 (en) Wafer polishing method
TW200920661A (en) Retaining ring with shaped profile
US11705324B2 (en) Apparatus and method for wafer cleaning
US6607423B1 (en) Method for achieving a desired semiconductor wafer surface profile via selective polishing pad conditioning
KR20190022915A (en) Retaining ring for CMP
TW201904720A (en) Chemical mechanical polishing system and method
CN108885981B (en) Wafer manufacturing method and wafer
US20150027063A1 (en) Method for fabricating pad conditioning tool
TWI511835B (en) Cmp station and method for polishing a wafer
TWI734714B (en) Polisher, polishing tool, and polishing method
TWI643703B (en) A polishing platen for chemical mechanical polishing
TW201829117A (en) Wafer manufacturing method and wafer
JP5755528B2 (en) Polishing pad
US9373524B2 (en) Die level chemical mechanical polishing
US20230398659A1 (en) Polishing Pad for Chemical Mechanical Polishing and Method
KR101677853B1 (en) Retainer ring of carrier head for chemical mechanical polighing equipment and carrier head comprising the same
KR100752181B1 (en) Chemical mechanical polishing machine
US6705922B1 (en) Method and apparatus for polishing a semiconductor substrate wafer
KR20070113634A (en) Polishing method of chemical mechanical polishing device
US20070049184A1 (en) Retaining ring structure for enhanced removal rate during fixed abrasive chemical mechanical polishing
KR102725357B1 (en) Retaining ring and substrate polishing apparatus including the same
KR20110083295A (en) Slurry spraying device