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TWI640593B - 接著劑、接著劑膜、半導體裝置及其製造方法 - Google Patents

接著劑、接著劑膜、半導體裝置及其製造方法 Download PDF

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Publication number
TWI640593B
TWI640593B TW102146488A TW102146488A TWI640593B TW I640593 B TWI640593 B TW I640593B TW 102146488 A TW102146488 A TW 102146488A TW 102146488 A TW102146488 A TW 102146488A TW I640593 B TWI640593 B TW I640593B
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Taiwan
Prior art keywords
adhesive
group
different
same
mass
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TW102146488A
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English (en)
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TW201430087A (zh
Inventor
Koichi Fujimaru
藤丸浩一
Toshihisa Nonaka
野中敏央
Original Assignee
Toray Industries, Inc.
東麗股份有限公司
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Publication of TW201430087A publication Critical patent/TW201430087A/zh
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Publication of TWI640593B publication Critical patent/TWI640593B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L93/00—Compositions of natural resins; Compositions of derivatives thereof
    • C08L93/04—Rosin
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J193/00—Adhesives based on natural resins; Adhesives based on derivatives thereof
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    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • H05K3/305—Affixing by adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • C09J2479/083—Presence of polyamine or polyimide polyimide in the primer coating
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Abstract

本發明提供一種保存性與連接可靠性這兩種特性優異的接著劑。本發明的接著劑含有(a)聚醯亞胺、(b)環氧化合物及(c)酸改質松香。

Description

接著劑、接著劑膜、半導體裝置及其製造方法
本發明是有關於一種在將大規模積體電路(Large Scale Integration，LSI)、發光二極體(Light-Emitting Diode，LED)、雷射二極體(Laser Diode)等半導體晶片接著或直接電性接合於軟性基板、玻璃環氧基板、玻璃基板、陶瓷基板、矽中介層(silicon interposer)等電路基板時，或將半導體晶片彼此接合或積層時所用的接著劑等。
近年來，隨著半導體裝置的小型化與高密度化，作為將半導體晶片安裝於電路基板的方法，倒裝晶片安裝(flip chip mounting)受到關注，並急速地普及。在倒裝晶片安裝中，作為用以確保接合部分的連接可靠性的方法，採用使環氧樹脂系接著劑介在形成於半導體晶片上的凸塊電極(bump electrode)與電路基板的焊墊電極(pad electrode)之間作為通常的方法。其中，含有聚醯亞胺樹脂、環氧樹脂及無機粒子的接著劑為利用聚醯亞胺樹脂的耐熱性與絕緣特性、環氧樹脂的接著性與耐水性、及無機 粒子的低吸水性與低熱膨脹性，而不斷地大量用於電氣、電子、建築、汽車、飛機等各種用途(例如參照專利文獻1~專利文獻3)。
另外，將半導體晶片及電路基板等金屬電極進行焊接時，可使用助焊劑(flux)。助焊劑的主要功能在於使焊接部潔淨，防止金屬的氧化，且提高焊料的潤濕性。作為助焊劑，已知有松香系材料(例如參照專利文獻4、專利文獻5)。
[現有技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2004-319823號公報
[專利文獻2]日本專利3995022號公報
[專利文獻3]日本專利特開2009-277818號公報
[專利文獻4]日本專利特開2001-219294號公報
[專利文獻5]日本專利特開2005-059028號公報
在倒裝晶片安裝中，先前的接著劑為藉由用以除去所吸濕的水分的加熱或半導體晶片安裝製程中的加熱，而緩慢地進行硬化反應，並且半導體晶片的凸塊電極難以貫通接著劑，因此存在電性連接變得不穩定、或捲入氣泡而連接可靠性變差的情況。 另外，存在藉由上述的加熱而接著劑流動，厚度產生不均，連接可靠性變差的情況。而且，使用先前的接著劑而製作的半導體裝置，亦存在以下課題：進行如吸濕回焊(reflow)處理及熱循環(thermal cycle)處理般的需要更強的耐久性的處理時，有難以保持充分的連接可靠性的情況。
本發明為了解決這些課題，目的是提供一種熱乾燥處理及安裝製程的加熱條件下的保存性優異的接著劑。
本發明是一種含有(a)聚醯亞胺、(b)環氧化合物及(c)酸改質松香的接著劑。
根據本發明，可獲得一種對於熱乾燥處理及安裝製程中的加熱處理的穩定性優異的接著劑。
本發明的接著劑是含有(a)聚醯亞胺、(b)環氧化合物及(c)酸改質松香的接著劑。
本發明的接著劑由於含有(a)聚醯亞胺，因此耐熱性及耐化學品性優異。特別是藉由使用在聚醯亞胺的側鏈具有至少一個選自由酚性羥基、磺酸基及硫醇基所組成的組群的具有高的極性的官能基者，而聚醯亞胺的有機溶劑可溶性以及與環氧樹脂的相容性提高，而且在熱處理時促進環氧化合物的開環反應、及促進對其他有機溶劑可溶性聚醯亞胺的加成反應，藉此可獲得具有更高密度的網狀結構的硬化物。作為此種聚醯亞胺的合成方法，並不限定於以下的例子，例如可列舉以下方法：首先，使含有酚性羥基、磺酸基、硫醇基等具有高的極性的官能基的二胺與 酸二酐反應而合成聚醯亞胺前驅物，繼而使用一級單胺作為封端劑，進行該聚醯亞胺前驅物的末端修飾，繼而進行150℃以上的熱處理，而進行聚醯亞胺閉環。除此以外，可列舉以下方法：首先使作為封端劑的一級單胺與酸二酐反應後，添加具有官能基的二胺而合成經末端修飾的聚醯亞胺前驅物，繼而在150℃以上的高溫下進行聚醯亞胺閉環。
另外，本發明中所用的(a)聚醯亞胺若為於23℃下在選自以下的至少1種的溶劑中溶解20質量%以上的有機溶劑可溶性聚醯亞胺，則所得的接著劑清漆(varnish)的塗佈性提高，因此理想。作為溶劑，可列舉：酮系溶劑的丙酮、甲基乙基酮、甲基異丁基酮、環戊酮、環己酮；醚系溶劑的1,4-二噁烷、四氫呋喃、二乙二醇二甲醚(diglyme)；二醇醚系溶劑的甲基溶纖劑、乙基溶纖劑、丙二醇單甲醚、丙二醇單乙醚、丙二醇單丁醚、二乙二醇甲基乙醚；其他溶劑的苄醇、N-甲基吡咯啶酮、γ-丁內酯、乙酸乙酯、N,N-二甲基甲醯胺。
(a)聚醯亞胺的較佳的一例是：具有通式(2)或通式(3)所示的結構，且相對於聚合物總量而含有5質量%~15質量%的通式(1)所示的結構作為通式(2)或通式(3)中的R4者。 藉由將通式(1)所示的結構的含量設為5質量%以上，而可對聚醯亞胺賦予在有機溶劑中的可溶性及適度的柔軟性。藉由將該含量設為15質量%以下，而可維持聚醯亞胺的剛性，且確保耐熱性及絕緣性。
另外，藉由此處的聚醯亞胺的合成而得的聚合物(聚醯亞胺)的總量，是藉由包含二胺與酸二酐及封端劑的構成成分的聚合而得的聚合物的質量。在該合成時所過量地投入、而不藉由聚合成為聚合物的二胺、酸二酐及封端劑不包括在聚醯亞胺的質量中。
式中，R1表示2價的烴基，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同。R2表示1價的烴基，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同。n表示1~10的整數。
R1較佳為碳數1~5的伸烷基或伸苯基。R2較佳為碳數1~5的烷基或苯基。另外，n較佳為1~2。藉由將n設為1以上，而可抑制硬化時的接著劑的收縮。藉由將n設為10以下，而可不降低聚醯亞胺骨架中的醯亞胺基含有率，並提高接著劑的絕緣性及耐熱性。
[化2]
式中，R3表示4價~14價的有機基，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同。另外，R4表示2價~12價的有機基，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同。另外，R3及R4的至少一個為芳香族基，上述芳香族基含有至少一個選自由1,1,1,3,3,3-六氟丙基、異丙基、醚基、硫醚基及SO2基所組成的組群的1個以上的基團。R5及R6表示選自由酚性羥基、磺酸基及硫醇基所組成的組群的1個以上的基團，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同。X表示1價的有機基。m表示8~200的整數。α及β分別表示0~10的整數，且α+β為於0~10的範圍。其中，在式中的重複單元中，於重複數m中，在20莫耳%~90莫耳%的重複單元中，為於α+β=1~10的範圍。
另外，以下將上述選自由1,1,1,3,3,3-六氟丙基、異丙基、醚基、硫醚基及SO2基所組成的組群的基團稱為「特定基」。
在通式(2)、通式(3)中，R3表示酸二酐的結構成分，其中較佳為碳數5~40的4價~14價的有機基。另外，R4表示二胺的結構成分，其中較佳為碳數5~40的2價~12價的有機基。 另外，R3、R4這兩者較佳為含有至少一個上述特定基。
R5為R3的取代基，選自由酚性羥基、磺酸基及硫醇基所組成的組群。R5源自成為原料的酸二酐的取代基。R6為R4的取代基，選自由酚性羥基、磺酸基及硫醇基所組成的組群。R6源自成為原料的二胺的取代基。
對所用的酸二酐進行說明。作為含有至少一個上述特定基的酸二酐，具體可列舉：2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、雙(3,4-二羧基苯基)碸二酐、雙(3,4-二羧基苯基)醚二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐或使烷基或鹵素原子在這些芳香族環上進行取代而成的化合物等。
作為含有至少一個上述特定基、且含有至少一個選自由酚性羥基、磺酸基及硫醇基所組成的組群的基團的酸二酐的例子，具體可列舉：下述所示的結構的芳香族酸二酐。
R9表示C(CF3)2、C(CH3)2、SO2、S或O。R10、R11表示氫原子、羥基、硫醇基或磺酸基。其中，R10及R11不同時為氫原子。
作為不含有上述特定基，且含有至少一個選自由酚性羥 基、磺酸基及硫醇基所組成的組群的基團的酸二酐的例子，具體可列舉：下述所示的結構的芳香族酸二酐。
R7、R8表示氫原子、羥基、硫醇基或磺酸基。其中，R7及R8不同時為氫原子。
作為不含有上述特定基，且亦不含有酚性羥基、磺酸基或硫醇基的酸二酐，具體可列舉：均苯四甲酸二酐(pyromellitic dianhydride)、3,3',4,4'-聯苯四甲酸二酐、2,3,3',4'-聯苯四甲酸二酐、2,2',3,3'-聯苯四甲酸二酐、3,3',4,4'-二苯甲酮四甲酸二酐、2,2',3,3'-二苯甲酮四甲酸二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、雙(3,4-二羧基苯基)甲烷二酐、雙(2,3-二羧基苯基)甲烷二酐、1,2,5,6-萘四甲酸二酐、2,3,6,7-萘四甲酸二酐、2,3,5,6-吡啶四甲酸二酐、3,4,9,10-苝四甲酸二酐等芳香族四甲酸二酐或這些的芳香族環藉由烷基或鹵素原子進行取代而成的化合物。
本發明中，可單獨使用這些酸二酐，或組合2種以上而使用。
繼而，對二胺進行說明。作為含有至少一個上述特定基的二胺，具體可列舉：3,4'-二胺基二苯基硫化物、4,4'-二胺基二苯 基硫化物、3,4'-二胺基二苯醚、4,4'-二胺基二苯醚、3,4'-二胺基二苯基碸、4,4'-二胺基二苯基碸、雙(4-胺基苯氧基苯基)碸、雙(3-胺基苯氧基苯基)碸、雙(4-胺基苯氧基)聯苯、雙{4-(4-胺基苯氧基)苯基}醚、1,4-雙(4-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯、2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、或這些的芳香族環藉由烷基或鹵素原子進行取代而成的化合物等。
作為含有至少一個上述特定基、且含有至少一個選自由酚性羥基、磺酸基及硫醇基所組成的組群的基團的二胺，具體可列舉：2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、2,2-雙(3-羥基-4-胺基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(3-羥基-4-胺基苯基)丙烷、3,3'-二胺基-4,4'-二羥基二苯醚、3,3'-二胺基-4,4'-二羥基二苯基碸、3,3'-二胺基-4,4'-二羥基二苯基硫化物、或這些的芳香族環藉由烷基或鹵素原子進行取代而成的化合物等、或下述所示的結構的二胺等。
R16表示C(CF3)2、C(CH3)2、SO2、S或O。R17、R18表示氫原子、羥基、硫醇基或磺酸基。其中，R17及R18不同時為氫原子。
作為不含有上述特定基，且含有至少一個選自由酚性羥 基、磺酸基及硫醇基所組成的組群的基團的二胺，具體可列舉：3,3'-二胺基-4,4'-二羥基聯苯、2,4-二胺基-苯酚、2,5-二胺基苯酚、1,4-二胺基-2,5-二羥基苯、二胺基二羥基嘧啶、二胺基二羥基吡啶、羥基二胺基嘧啶、9,9-雙(3-胺基-4-羥基苯基)茀、或藉由烷基或鹵素原子於這些的芳香族環上進行取代而成的化合物等、或下述所示的結構的二胺等。
R12~R15表示氫原子、羥基、硫醇基或磺酸基。其中，R12及R13不同時為氫原子。
作為不含有上述特定基，且亦不含有酚性羥基、磺酸基或硫醇基的二胺，具體可列舉：3,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基甲烷、聯苯胺、間苯二胺、對苯二胺、1,5-萘二胺、2,6-萘二胺、2,2'-二甲基-4,4'-二胺基聯苯、2,2'-二乙基-4,4'-二胺基聯苯、3,3'-二甲基-4,4'-二胺基聯苯、3,3'-二乙基-4,4'-二胺基聯苯、2,2',3,3'-四甲基-4,4'-二胺基聯苯、3,3',4,4'-四甲基-4,4'-二胺基聯苯、2,2'-二(三氟甲基)-4,4'-二胺基聯苯、或這些的芳香族環藉由烷基或鹵素原子進行取代而成的化合物、對苯二甲酸醯肼、間苯二 甲酸醯肼、鄰苯二甲酸醯肼、2,6-萘二甲酸二醯肼、4,4'-雙苯基二羰基肼、4,4'-環己烷二羰基肼、或這些的芳香族環藉由烷基或鹵素原子進行取代而成的醯肼化合物等。二胺可單獨使用或組合2種以上而使用。
另外，由於通式(1)所示的結構是作為通式(2)及通式(3)中的R4而被包含，因此成為二胺的構成成分。作為包含通式(1)所示的結構的二胺，可列舉：雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基-苯基)八甲基五矽氧烷等。
藉由選擇通式(2)及通式(3)中的R5及R6，而可調整對接著劑進行熱處理時的聚醯亞胺與環氧化合物的反應率，並調整接著劑的硬化物的交聯密度。藉此可對接著劑的硬化物賦予所需要的耐熱性及耐化學品性。α及β分別表示0~10的整數，且α+β為於0~10的範圍。其中，在式中的重複單元中，重複數m中，在20莫耳%~90莫耳%的重複單元中，為於α+β=1~10的範圍。另外，較佳為R5及R6的合計的20莫耳%~90莫耳%為選自由酚性羥基、磺酸基及硫醇基所組成的組群的基團。藉由將這些基團設為R5及R6的合計的20莫耳%以上，而可提高硬化前的接著劑的有機溶劑可溶性、接著劑的硬化物的耐化學品性及耐熱性；藉由將這些基團設為R5及R6的合計的90莫耳%以下，而可將接著劑的硬化物的交聯密度抑制在適度的範圍，並保持硬化後的接著劑膜的伸展性及韌性。
在通式(2)及通式(3)中，X表示1價的有機基，且 是作為封端劑的一級單胺的殘基。此處，作為一級單胺，可列舉：脂肪族單胺、脂環族單胺、芳香族單胺等。這些中，就聚醯亞胺的耐熱性提高的方面而言，較佳為芳香族單胺。這些可為單獨、或2種以上的組合的任一種。作為一級單胺，具體可列舉：5-胺基喹啉、4-胺基喹啉、3-胺基萘、2-胺基萘、1-胺基萘、苯胺等。 這些中，較佳為使用苯胺。
另外，作為該一級單胺，較佳為使用不具有其他如與環氧化合物反應的取代基者。藉此，可獲得在分子運動性高的聚醯亞胺的末端部不具有如與環氧化合物反應的取代基的有機溶劑可溶性聚醯亞胺。藉由使用上述一級單胺，有機溶劑可溶性聚醯亞胺與環氧化合物在室溫下的反應難以進行，並可提高接著劑的保存性。
關於通式(2)及通式(3)的X成分的導入比例，若以作為其原成分的封端劑的一級單胺成分進行換算，則相對於聚醯亞胺所含的全部二胺殘基100莫耳，較佳為於0.1莫耳~60莫耳的範圍，特佳為5莫耳~50莫耳。
通式(2)及通式(3)的m表示聚合物的重複數，表示8~200的整數。m較佳為10~150的整數。就分子量而言，藉由凝膠過濾層析法測定的重量平均分子量以聚苯乙烯換算，較佳為4000~80000，特佳為8000~60000。藉由將m設為8以上，而增大所得的接著劑清漆的黏度而可實現厚膜塗佈，藉由將m設為200以下，而可提高聚醯亞胺在溶劑中的溶解性。以下例示聚醯亞胺 的重量平均分子量的測定方法。使用將聚醯亞胺溶解於N-甲基吡咯啶酮(N-Methyl-2-Pyrrolidone，NMP)中的固體成分濃度為0.1質量%的聚醯亞胺溶液，藉由凝膠滲透層析(Gel Permeation Chromatography，GPC)裝置Waters2690(沃特斯(Waters)(股)製造)算出聚苯乙烯換算的重量平均分子量。GPC測定條件是將移動層設為以分別濃度為0.05mol/L而溶解有LiCl與磷酸的NMP，將展開速度設為0.4ml/分鐘。作為所使用的GPC裝置，例如可列舉： 檢測器：Waters996
系統控制器：Waters2690
管柱烘箱(column ovens)：Waters HTR-B
熱控制器：Waters TCM
管柱：TOSOH保護管柱
管柱：TOSOH TSK-GEL α-4000
管柱：TOSOH TSK-GEL α-2500等。
本發明中所用的(a)聚醯亞胺可為僅包含通式(2)及通式(3)所示的結構者，亦可為除了通式(2)及通式(3)所示的結構以外亦具有其他結構作為共聚合成分的共聚物，並且還可為這些的混合物。而且，除了這些聚醯亞胺外，亦可混合具有其他結構的聚醯亞胺。此時，相對於全部聚醯亞胺，較佳為含有50莫耳%以上的具有通式(2)及通式(3)所示的結構的聚醯亞胺。 共聚合或混合所用的結構的種類及量，較佳為在不損害藉由加熱 處理而得的耐熱性樹脂的耐熱性的範圍內進行選擇。
(a)聚醯亞胺可將二胺的一部分置換為作為單胺的封端劑，或者將酸二酐的一部分置換為作為單羧酸、酸酐、單醯氯化合物、單活性酯化合物的封端劑，利用公知的方法而合成。例如可利用以下方法而獲得聚醯亞胺前驅物：在低溫下使四甲酸二酐與二胺化合物(將一部分置換為作為單胺的封端劑)反應的方法；在低溫下使四甲酸二酐(將一部分置換為作為酸酐或單醯氯化合物或單活性酯化合物的封端劑)與二胺化合物反應的方法；藉由四甲酸二酐與醇的反應而獲得二酯，然後在二胺(將一部分置換為作為單胺的封端劑)與縮合劑的存在下反應的方法；藉由四甲酸二酐與醇的反應而獲得二酯，然後將其餘的二羧酸進行醯氯化，並與二胺(將一部分置換為作為單胺的封端劑)反應的方法等。繼而，藉由利用公知的方法將聚醯亞胺前驅物進行醯亞胺閉環，而可合成聚醯亞胺。
另外，導入至聚合物中的通式(1)的結構及源自封端劑的結構可藉由以下方法而容易地檢測及定量。例如可藉由以下方式而容易地檢測及定量通式(1)的結構及所使用的封端劑：將導入了通式(1)的結構及封端劑的聚合物溶解於酸性溶液或鹼性溶液中，分解為作為聚合物的結構單元的二胺成分與酸酐成分後，使用氣相層析法(Gas Chromatography，GC)、或核磁共振(Nuclear Magnetic Resonance，NMR)測定所得的分解物。與此不同，亦可藉由將導入了封端劑的聚醯亞胺直接進行熱分解氣相 層析法(PGC)或紅外光譜及13CNMR光譜測定，而容易地檢測及定量通式(1)的結構及所使用的封端劑。
相對於(b)環氧化合物100質量份，接著劑中的(a)聚醯亞胺的含量較佳為15質量份~90質量份，為了與環氧化合物反應而形成密度高的網狀結構，(a)聚醯亞胺的含量更佳為30質量份~70質量份。若(a)聚醯亞胺的含量為15質量份以上，則耐熱性進一步提高。另外，若(a)聚醯亞胺的含量為90質量份以下，則接著劑的吸水進一步變少，因此可進一步抑制使接著劑加熱硬化時的發泡，例如電路基板與半導體晶片間的接著力的降低進一步變少，而連接可靠性進一步提高。
本發明的接著劑含有(b)環氧化合物。(b)環氧化合物由於與(c)酸改質松香或聚醯亞胺側鏈的酚性羥基、磺酸基或硫醇基反應，而構成具有密度高的網狀結構的硬化物，因此所得的硬化物對各種化學品表現出耐受性。藉此，可提高接著劑對各種溶劑、特別是N-甲基吡咯啶酮的耐受性。另外，環氧化合物通常藉由不伴有收縮的開環反應而硬化，因此可降低接著劑的硬化時的收縮。作為(b)環氧化合物，較佳為具有2個以上環氧基者、或環氧當量為100~500者。藉由將環氧當量設為100以上，而可增大經硬化的接著劑的韌性。藉由將環氧當量設為500以下，而可使經硬化的接著劑成為密度高的網狀結構，並可使經硬化的接著劑成為高絕緣性。
另外，(b)環氧化合物包括液態環氧化合物與固態環氧 化合物兩者，相對於環氧化合物總量，液態環氧化合物的含有比率較佳為20質量%以上、70質量%以下，更佳為30質量%以上、60質量%以下。藉由接著劑含有該範圍的量的液態環氧化合物，而可具備作為半導體用接著劑的適度的可塑性及可撓性。
此處，所謂液態環氧化合物，是在25℃、1.013×105N/m2下顯示150Pa．s以下的黏度者，所謂固態環氧化合物，是在25℃下顯示超過150Pa．s的黏度者。作為液態環氧化合物，例如可列舉：JER(註冊商標)828、JER(註冊商標)1750、JER(註冊商標)152、JER(註冊商標)630、YL980(以上為商品名、三菱化學(股)製造)，EPICLON(註冊商標)HP-4032(以上為商品名、大日本油墨化學工業(Dainippon Ink and Chemicals，DIC)(股)製造)等，但並不限定於這些。另外，可將這些組合2種以上而使用。另外，作為固態環氧化合物，可列舉：JER(註冊商標)1002、JER(註冊商標)1001、YX4000H、JER(註冊商標)4004P、JER(註冊商標)5050、JER(註冊商標)154、JER(註冊商標)157S70、JER180S70(以上為商品名、三菱化學(股)製造)，TEPIC(註冊商標)S、TEPIC(註冊商標)G、TEPIC(註冊商標)P(以上為商品名、日產化學工業(股)製造)，Epotohto(註冊商標)YH-434L(商品名、新日鐵化學(股)製造)，EPPN502H、NC3000(以上為商品名、日本化藥(股)製造)，EPICLON(註冊商標)N695、EPICLON(註冊商標)N865、EPICLON(註冊商標)HP-7200(以上為商品名、大日本油墨化學工業(股)製造)等，但並不限定 於這些。另外，可將這些組合2種以上而使用。
本發明的接著劑含有(c)酸改質松香。酸改質松香是使松脂膠(gum rosin)、木松香(wood rosin)、妥爾油松香(tall oil rosin)等原料松香類與(甲基)丙烯酸、順丁烯二酸(酐)、反丁烯二酸、檸康酸(酐)、衣康酸(酐)等不飽和羧酸進行狄爾斯-阿爾德反應(Diels-Alder reaction)(加成反應)而得者。原料松香較佳為使用為了藉由蒸餾、再結晶、萃取等而除去金屬等雜質及提高樹脂色調而進行純化者。另外，酸改質松香可藉由氫化而製成為透明的色調的酸改質松香。作為此種酸改質松香，可列舉：Pinecrystal(註冊商標)KE-604、Pinecrystal(註冊商標)KR-120、MALKYD(註冊商標)No.33(以上為商品名、荒川化學工業股份有限公司)。
這些酸改質松香具有2個以上羧基。因此，酸改質松香與(a)有機溶劑可溶性聚醯亞胺及(b)環氧化合物的相容性優異。另外，酸改質松香可與環氧化合物反應，而形成密度高的網狀結構。另外認為，酸改質松香具有松香自身的蓬鬆(bulky)的結構與藉由酸改質而生成的蓬鬆的環己烷環，這會立體地阻礙環氧基對於羧基的反應，而提高接著劑的熱乾燥處理及安裝製程的加熱條件的穩定性。另一方面，在作為接著劑的硬化溫度的例如200℃~250℃的溫度下，酸改質松香的分子運動性提高，與環氧化合物的反應迅速地進行，而可在短時間內完成接著劑的硬化。
相對於(b)環氧化合物100質量份，接著劑中的(c) 酸改質松香的含量較佳為5質量份以上、30質量份以下。藉由將酸改質松香的含量設為該範圍，而保存性優異，且可在短時間內進行接著劑的硬化。相對於(b)環氧化合物100質量份，(c)酸改質松香的含量更佳為20質量份以下。另外，該含量更佳為10質量份以上。
另外，藉由使用酸改質松香，而亦有使接著劑與電極等金屬材料的接著性提高或對接著劑賦予助焊劑功能的效果。即，藉由使用本發明的接著劑將電路構件電性連接，而使接合部潔淨，可防止在接合部的電路構件間混入作為接著劑的成分的樹脂或無機粒子等，且可提高焊料的潤濕性。如此，(c)酸改質松香於接著性的提高、及電氣的連接的可靠性提高這兩方面有效果。 而且，如上述般，由於酸改質松香的酸性基在硬化反應時與環氧化合物反應而被消耗、且酸改質松香具有蓬鬆的結構，因此在接著後可防止腐蝕電極等金屬部分。
此外，亦可併用酸改質松香以外的其他公知的潛在性硬化劑。特別是鹼性潛在性硬化劑表現出與酸改質松香的相互作用力，因此可進一步提高潛在性。作為此種鹼性潛在性硬化劑，可較佳地使用咪唑系潛在性硬化劑。具體而言，較佳為使用：Curezol(註冊商標)2PZCNS、Curezol(註冊商標)2PZCNS-PW、Curezol(註冊商標)C11Z-CNS、Curezol(註冊商標)2MZ-A、Curezol(註冊商標)C11-A、Curezol(註冊商標)2E4MZ-A、Curezol(註冊商標)2MZA-PW、Curezol(註冊商標)2MAOK-PW、Curezol (註冊商標)2PHZ-PW(以上為商品名、四國化成工業(股)製造)，作為將咪唑系潛在性硬化劑藉由異氰酸酯處理的微膠囊型硬化劑的Novacure(註冊商標)HX-3941HP、Novacure(註冊商標)HXA3922HP、Novacure(註冊商標)HXA3932HP、Novacure(註冊商標)HXA3042HP(以上為商品名、旭化成電子材料(Asahi Kasei E-materials)(股)製造)等。
本發明的接著劑可進一步含有(d)無機粒子。作為(d)無機粒子的材質，可將二氧化矽、氧化鋁、二氧化鈦、氮化矽、氮化硼、氮化鋁、氧化鐵、玻璃或其他金屬氧化物、金屬氮化物、金屬碳酸鹽、硫酸鋇等金屬硫酸鹽等單獨或混合2種以上而使用。 這些中，就低熱膨脹性、散熱性、低吸濕率及接著劑中的分散穩定性的方面而言，可較佳地使用二氧化矽及氧化鋁。
相對於上述(a)成分~(d)成分的總量，接著劑中的(d)無機粒子的含量較佳為30質量%~80質量%，更佳為50質量%~70質量%。藉由(d)無機粒子的含量為30質量%~80質量%，而在使接著劑加熱乾燥時更難以產生因流動變形引起的厚度不均，伴隨於此，使用該接著劑所製作的半導體裝置的連接可靠性進一步提高。特別是在進行如吸濕回焊處理及熱循環處理般的需要更強的耐久性的處理時，可進一步保持連接可靠性。另外，在接著劑中無機粒子的分散性變得更充分，無機粒子彼此的凝聚進一步變少。另外，在將接著劑形成於脫模性塑膠膜上製成接著膜，並捲取成卷狀時，接著片的破裂或自脫模性塑膠膜的脫落的 問題更難以產生。
(d)無機粒子的形狀可為球狀、破碎狀、片(flake)狀等非球狀的任一種，但就在接著劑中容易均勻分散的方面而言，可較佳地使用球狀無機粒子。另外，球狀無機粒子的平均粒徑較佳為3μm以下。該平均粒徑更佳為10nm以上、1μm以下。 藉由該平均粒徑為10nm以上，而分散性進一步提高，並能以更高濃度填充至接著劑中。藉由該平均粒徑為3μm以下，而無機粒子的表面積充分變大，因此(d)無機粒子與上述(a)成分~(c)成分及根據需要而混合的成分的相互作用力充分變大，在進行加熱乾燥時，更難以流動變形。
另外，在接著劑需要透明性時，無機粒子的粒徑較佳為100nm以下，更佳為60nm以下。例如，在基板上形成接著劑後，為了對準(alignment)等而有需要透過接著劑來視認位於基板表面的標記的情形等。
另外，所謂無機粒子的平均粒徑，表示無機粒子單獨存在時的粒徑，是指頻度最高的粒徑。所謂無機粒子的粒徑，在無機粒子的形狀為球狀時表示其直徑，為橢圓狀及扁平狀時表示形狀的最大長度。而且，在無機粒子的形狀為棒狀或纖維狀時表示長度方向的最大長度。作為測定接著劑中的無機粒子的平均粒徑的方法，藉由掃描型電子顯微鏡(Scanning Electron Microscope，SEM)直接觀察粒子，並測定100個粒子的粒徑。根據藉由測定而得的粒徑的分佈，以個數基準計選擇頻度最高的粒徑，並作為 平均粒徑。
本發明的接著劑為了使硬化後的膜低應力化，而可進一步含有熱塑性樹脂。作為熱塑性樹脂，例如可列舉：苯氧基樹脂、聚酯、聚胺基甲酸酯、聚醯胺、聚丙烯、丙烯腈-丁二烯共聚物(Nitrile Butadiene Rubber，NBR)、苯乙烯-丁二烯共聚物(Styrene Butadiene Rubber，SBR)、丙烯腈-丁二烯-甲基丙烯酸共聚物、丙烯腈-丁二烯-丙烯酸共聚物等，但並不限定於這些。可進一步含有離子捕捉劑、界面活性劑、矽烷偶合劑、有機染料、無機顏料等。
本發明的接著劑在溶劑中混合各構成材料而可用作清漆。另外，亦可將接著劑成形為片狀而製成接著劑膜使用。作為將接著劑成形為片狀的方法，可列舉：將上述接著劑清漆塗佈於剝離性基材上後，進行脫溶劑的方法。
作為溶劑，可將酮系溶劑的丙酮、甲基乙基酮、甲基異丁基酮、環戊酮、環己酮；醚系溶劑的1,4-二噁烷、四氫呋喃、二乙二醇二甲醚；二醇醚系溶劑的甲基溶纖劑、乙基溶纖劑、丙二醇單甲醚、丙二醇單乙醚、丙二醇單丁醚、二乙二醇甲基乙醚；其他苄醇、N-甲基吡咯啶酮、γ-丁內酯、乙酸乙酯、N,N-二甲基甲醯胺等單獨或混合2種以上而使用，但並不限定於這些。
作為剝離性基材，可列舉：聚丙烯膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚酯膜、聚氯乙烯膜、聚碳酸酯膜、聚醯亞胺膜、聚四氟乙烯膜等氟樹脂膜、聚苯硫醚膜、聚丙烯膜、聚乙烯膜等，但並不限定於這些。另外，剝離性基材可藉 由矽酮系脫模劑、長鏈烷基系脫模劑、氟系脫模劑、脂肪族醯胺系脫模劑等而實施脫模處理。剝離性基材的厚度並無特別限定，通常較佳為5μm~75μm者。就可減小對於接著劑的殘留應力的方面而言，剝離性基材的厚度較佳為設為接著劑的厚度以上。另外，較佳為在接著劑膜的與具有脫模性基材的面為相反側的面上進一步積層另外的剝離性基材，藉由剝離性基材夾持上下而成的接著劑膜。作為另外的剝離性基材的材質及厚度，可使用與之前所說明者相同者。兩種剝離性基材可相同。
在藉由剝離性基材積層接著劑膜的兩面時，較佳為各剝離性基材與接著劑膜間的接著力存在差。特別是接著力的差較佳為5N/m以上，更佳為47N/m以下。藉由將接著力的差設為5N/m以上，而在將接著力小的剝離性基材剝離時，可不使接著劑膜自另一剝離性基材剝離或隆起。另外，藉由將接著力的差設為47N/m以下，而在剝離後的各剝離性基材的表面難以殘存接著劑。
另外，將各構成材料混合於溶劑中而製成清漆狀的接著劑，亦可在半導體晶圓或電路基板等上進行塗佈及脫溶劑而使用。
本發明的接著劑的最低熔融黏度較佳為處於100Pa．s以上、10000Pa．s以下的範圍。更佳的最低熔融黏度的範圍為600Pa．s以上、5000Pa．s以下。藉由將最低熔融黏度設為該範圍，而用作接著劑膜時，可不捲入褶皺或氣泡地進行接著劑膜在半導體晶圓或電路基板上的積層。而且，可減小半導體晶片接合時的接著劑的溢出。另外，接著劑的最低熔融黏度例如可使用動態黏彈性測 定裝置，對尺寸為直徑為15mm、厚度為0.8mm的試樣，在升溫速度為2℃/分鐘、測定頻率為1Hz、測定應變為9%、測定溫度範圍為0℃~150℃下測定。隨著測定溫度自0℃上升，而接著劑的黏度降低，但若溫度超過某個值，則會因硬化反應而接著劑的黏度反而上升。將此時的黏度的極小值作為最低熔融黏度。
另外，本發明的接著劑較佳為在23℃、55%RH的環境下保管1個月後的最低熔融黏度為於100Pa．s~10000Pa．s的範圍內。藉此，在將包含本發明的接著劑的接著劑膜進行長期保管後，積層於半導體晶圓或電路基板上時，亦可不捲入褶皺或氣泡地進行積層。而且，可減小半導體晶片接合時的接著劑的溢出。
在本發明中，使用酸改質松香作為接著劑的硬化劑。該酸改質松香除了松香自身具有蓬鬆的結構外，還具有藉由酸改質而生成的蓬鬆的環己烷環，這會立體地阻礙環氧基對於羧基的反應，因此可將在上述條件下保存後的最低熔融黏度控制在100Pa．s~10000Pa．s的範圍內。
本發明的接著劑可較佳地用作半導體用接著劑，其用於半導體裝置所用的半導體元件、電路基板、金屬配線材料等電路構件彼此的接著或固定、或半導體元件的密封。
本發明的半導體裝置包含上述接著劑的硬化物或上述接著劑膜的硬化物。本發明中所謂的半導體裝置，是指藉由利用半導體元件的特性而可發揮出功能的所有裝置。將半導體元件連接於基板者、或將半導體元件彼此或基板彼此連接者、電氣光學 裝置、半導體電路基板及電子設備全部包括在半導體裝置中。
本發明的半導體裝置的製造方法的特徵是：使上述接著劑或上述接著劑膜介在第一電路構件與第二電路構件之間，並藉由加熱加壓將上述第一電路構件與上述第二電路構件電性連接。
使用本發明的接著劑的半導體裝置的製造方法的一例如以下所述。首先，準備具有第一連接端子的第一電路構件、及具有第二連接端子的第二電路構件。此處，作為電路構件，可列舉：半導體晶片、電阻體晶片、電容器晶片等晶片零件，具有矽穿孔(Through Silicon Via，TSV)電極的半導體晶片或矽中介層、玻璃環氧電路基板、膜電路基板、玻璃基板、附有貫通電極的玻璃中介層等基板等。另外，作為連接端子，可列舉：包含金、銅等的鍍敷凸塊、在銅柱(copper pillar)的前端將焊料形成為半球狀的附有焊料帽(solder cap)的銅柱凸塊、柱形凸塊(stud bump)等凸塊電極，焊球、或焊墊電極等。另外，可在第一電路構件及/或第二電路構件形成貫通電極，並在構件的單面及/或兩面形成連接端子。
將第一電路構件與第二電路構件以第一連接端子與第二連接端子對向的方式配置。繼而，使本發明的接著劑介在上述對向配置的第一連接端子與第二連接端子之間。並且，將第一電路構件與第二電路構件加熱加壓，而使上述對向配置的第一連接端子與第二連接端子電性連接。藉由該步驟，第一電路構件與第二電路構件牢固地電性連接，並且接著劑硬化而將第一電路構件 與第二電路構件物理性地固定。
此處，接著劑可僅提供於之前的任一個電路構件的連接端子側之面，亦可提供於第一電路構件及第二電路構件的連接端子側之兩個面。
作為更詳細的實施形態的例子，對以下方法進行說明：使用具有第一電路構件與凸塊的半導體晶片、以及具有配線圖案作為第二電路構件的電路基板或半導體晶片，將兩者經由本發明的接著劑膜進行連接，藉由接著劑密封第一電路構件與第二電路構件之間的空隙而製作半導體裝置。
首先，將接著劑膜貼附於作為第二電路構件的形成有配線圖案的電路基板或半導體晶片。此時，接著劑膜在切成特定大小後，可貼附於形成有配線圖案的電路基板的配線圖案面或半導體晶片的凸塊形成面。另外，在半導體晶圓的凸塊形成面貼附接著劑膜後，將半導體晶圓進行切割(dicing)而單片化，藉此可製作貼附有接著劑膜的半導體晶片。
繼而，將作為第一電路構件的半導體晶片以第一電路構件的凸塊與第二電路構件的配線圖案對向的方式配置，使用接合裝置將兩者加熱加壓。加熱加壓條件若為可良好地獲得電性連接的範圍，則並無特別限定，但為了進行接著劑的硬化，需要溫度為100℃以上、壓力為1mN/凸塊以上、時間為0.1秒鐘以上的加熱加壓。在較佳為120℃以上、300℃以下、更佳為150℃以上、250℃以下的溫度，較佳為5mN/凸塊以上、50000mN/凸塊以下、 更佳為10mN/凸塊以上、10000mN/凸塊以下的壓力，較佳為1秒鐘以上、60秒鐘以下、更佳為2秒鐘以上、30秒鐘以下的時間的接合條件下進行加熱加壓。另外，在接合時，作為暫時壓接，可藉由溫度為50℃以上、壓力為1mN/凸塊以上、時間為0.1秒鐘以上的加熱加壓，使半導體晶片上的凸塊與電路基板上的配線圖案接觸後，在上述條件下進行接合。根據需要，可在接合後，將附有半導體晶片的電路基板在50℃以上、200℃以下的溫度下加熱10秒鐘以上、24小時以下。
此外，本發明的接著劑亦可用作用以製作晶粒黏著膜(die attach film)、切割晶粒黏著膜(dicing die attach film)、導線架(leadframe)固定膠帶、散熱板、加強板、屏蔽材料(shielding material)的接著劑、阻焊劑等的接著性樹脂材料。
由於近年來的半導體裝置製造作業的自動化的顯著發展，對於半導體用接著劑及貼附有半導體用接著劑的電路基板或半導體晶片，作為直至進行硬化為止的保存期間，要求較佳為可進行30天以上的室溫放置，更佳為可進行60天以上的室溫放置。 若使用本發明的接著劑，則可獲得即便在室溫下亦可保存60天以上，無接合(bonding)時的發泡，以短時間的加熱加壓而取得初始導通，在吸濕回焊後，即便投入-40℃~125℃的熱衝擊試驗亦可取得導通的連接可靠性優異的半導體裝置。
[實施例]
以下列舉實施例等說明本發明，但本發明並不由這些例 子限定。
合成例1 聚醯亞胺A的合成
在乾燥氮氣流下，將1,3-雙(3-胺基苯氧基)苯(以下設為APB-N)4.82g(0.0165莫耳)、3,3'-二胺基-4,4'-二羥基二苯基碸(以下設為ABPS)3.08g(0.011莫耳)、1,3-雙(3-胺基丙基)四甲基二矽氧烷(以下設為SiDA)4.97g(0.02莫耳)、及作為封端劑的3-胺基苯酚0.55g(0.005莫耳)溶解於N-甲基吡咯啶酮(以下設為NMP)130g中。於其中添加2,2-雙{4-(3,4-二羧基苯氧基)苯基}丙烷二酐(以下設為BSAA)26.02g(0.05莫耳)與NMP 20g，在25℃下反應1小時，繼而在50℃下攪拌4小時。然後，在180℃下攪拌5小時。攪拌結束後，將溶液投入至水3L中，進行過濾而回收沈澱，藉由水清洗3次後，使用真空乾燥機在80℃下乾燥20小時。測定所得的聚合物固體的紅外吸收光譜，結果在1780cm-1左右、1377cm-1左右檢測到源自聚醯亞胺的醯亞胺結構的吸收峰值。如此獲得在末端及側鏈具有酚性羥基、並含有11.5質量%的通式(1)所示的結構的聚醯亞胺A。在4g聚醯亞胺A中添加四氫呋喃6g，在23℃下進行攪拌，結果溶解。
合成例2 聚醯亞胺B的合成
在乾燥氮氣流下，將APB-N 4.82g(0.0165莫耳)、ABPS 3.08g(0.011莫耳)、SiDA 4.97g(0.02莫耳)、及作為封端劑的苯胺0.47g(0.005莫耳)溶解於NMP 130g中。於其中添加BSAA 26.02g(0.05莫耳)與NMP 20g，在25℃下反應1小時，繼而在50℃ 下攪拌4小時。然後，在180℃下攪拌5小時。攪拌結束後，將溶液投入至水3L中，進行過濾而回收沈澱，藉由水清洗3次後，使用真空乾燥機在80℃下乾燥20小時。測定所得的聚合物固體的紅外吸收光譜，結果在1780cm-1左右、1377cm-1左右檢測到源自聚醯亞胺的醯亞胺結構的吸收峰值。如此獲得在側鏈具有酚性羥基、並含有11.6質量%的通式(1)所示的結構的聚醯亞胺B。在4g聚醯亞胺B中添加四氫呋喃6g，在23℃下攪拌，結果溶解。
合成例3 聚醯亞胺C的合成
在乾燥氮氣流下，將2,2-雙(3-胺基-4-羥基苯基)六氟丙烷(以下設為BAHF)24.54g(0.067莫耳)、SiDA 4.97g(0.02莫耳)、及作為封端劑的苯胺1.86g(0.02莫耳)溶解於NMP 80g中。於其中添加雙(3,4-二羧基苯基)醚二酐(以下設為ODPA)31.02g(0.1莫耳)與NMP 20g，在20℃下反應1小時，繼而在50℃下攪拌4小時。然後，添加二甲苯15g，一邊使水與二甲苯一起共沸，一邊在180℃下攪拌5小時。攪拌結束後，將溶液投入至水3L中而獲得白色沈澱的聚合物。將該沈澱進行過濾而回收，藉由水清洗3次後，使用真空乾燥機在80℃下乾燥20小時。測定所得的聚合物固體的紅外吸收光譜，結果在1780cm-1左右、1377cm-1左右檢測到源自聚醯亞胺的醯亞胺結構的吸收峰值。如此獲得在側鏈具有酚性羥基、並含有7.5質量%的通式(1)所示的結構的聚醯亞胺C。 在4g聚醯亞胺C中添加四氫呋喃6g，在23℃下攪拌，結果溶解。
合成例4 聚醯亞胺D的合成
在乾燥氮氣流下，將APB-N 8.03g(0.0275莫耳)、SiDA 4.97g(0.02莫耳)、及作為封端劑的苯胺0.47g(0.005莫耳)溶解於NMP 130g中。於其中添加BSAA 26.02g(0.05莫耳)與NMP 20g，在25℃下反應1小時，繼而在50℃下攪拌4小時。然後，在180℃下攪拌5小時。攪拌結束後，將溶液投入至水3L中，進行過濾而回收沈澱，藉由水清洗3次後，使用真空乾燥機在80℃下乾燥20小時。測定所得的聚合物固體的紅外吸收光譜，結果在1780cm-1左右、1377cm-1左右檢測到源自聚醯亞胺的醯亞胺結構的吸收峰值。如此獲得含有11.6質量%的通式(1)所示的結構的聚醯亞胺D。在4g聚醯亞胺D中添加四氫呋喃6g，在23℃下攪拌，結果溶解。
此外，實施例、比較例中所用的各材料如以下所述。
(b)環氧化合物
固態環氧化合物
N865(商品名、環氧當量：200g/eq、大日本油墨化學工業(股)製造)
液態環氧化合物
YL980(商品名、185g/cq、三菱化學(股)製造)。
(c)酸改質松香
KE-604(商品名、酸值為240(KOHmg/g)、軟化點為130℃、色調為150黑曾(Hazen)、丙烯酸系改質松香、荒川化學工業(股)製造)。
KR-120(商品名、酸值為320(KOHmg/g)、軟化點為120℃、色調為150黑曾、荒川化學工業(股)製造)。
(c')其他的潛在性硬化劑
Novacure(註冊商標)HXA-3941HP(商品名、旭化成電子材料(股)製造)中所含的液態環氧化合物。Novacure(註冊商標)HXA-3941HP中微膠囊型硬化劑/液態環氧化合物為1/2，所含的液態環氧化合物中雙酚A型環氧化合物/雙酚F型環氧化合物=1/4。 表中的Novacure(註冊商標)HXA-3941HP記載的質量份中，括弧內所記載的量表示作為微膠囊的質量份。
(d)無機粒子
SO-E2(商品名、亞都瑪科技(Admatechs)(股)製造、球形二氧化矽粒子、平均粒徑為0.5μm)
(f)溶劑：甲基異丁基酮(以下設為MIBK)
(g)松香
KR-85(商品名、酸值為175(KOHmg/g)、軟化點為85℃、色調60黑曾、荒川化學工業(股)製造)。
實施例1~實施例30及比較例1~比較例8
(1)接著劑膜的製作方法
以表中所記載的組成比混合表1~表4所示的(a)成分~(f)成分，而製作接著劑清漆。使用狹縫式模塗機(塗敷機)，將所製作的接著劑清漆塗佈於作為剝離性基材的厚度為50μm的聚酯對苯二甲酸酯膜(商品名、Serapiru(註冊商標)HP2(U))的表面 處理面上，在80℃下進行10分鐘乾燥。藉此在所得的乾燥後的厚度為50μm的接著劑膜上積層厚度為10μm的聚丙烯膜(商品名、Torayfan(註冊商標)BO型號YK57、單面電暈放電處理品)的未處理面作為另外的剝離性基材後，在外徑為9.6cm的紙管上以剝離性基材HP2(U)成為外側的方式捲取成卷狀，而獲得在接著劑膜的兩面具有剝離性基材的片的原膜。繼而，使用膜分切機(slitter)將該片的原膜以7.5mm寬度進行分切，在外徑為5.0cm的卷軸上以剝離性基材HP2(U)成為外側的方式捲取成卷狀，而獲得在兩面具有剝離性基材的接著劑膜的捲繞體。所得的捲繞體即時地分為：進行(2)以後的步驟者；以及在23℃、55%RH的環境下分別保管1個月及3個月後進行(2)以後的步驟者，並對保存條件不同的捲繞體進行評價。
(2)膠帶貼附步驟
使用膠帶貼合裝置(東麗工程(TORAY ENGINEERING)(股)製造、DA2000)，進行接著劑膜在電路基板上的貼附。首先，自藉由(1)的步驟而得的在兩面具有剝離性基材的接著劑膜的捲繞體，除去剝離性基材YK57，而使接著劑膜露出。繼而，在固定於平台上的電路基板(無垢銅焊墊電極、可搭載300個7.5mm見方的半導體晶片的附有電路的玻璃環氧基板)上，在溫度80℃、1秒鐘的條件下貼合剝離了剝離性基材YK57後的接著劑膜的接著劑膜面，然後除去剝離性基材HP2(U)。重複進行該貼附步驟，而獲得在300個部位貼附有7.5mm見方的大小的接著劑膜的電路 基板。
(3)倒裝晶片接合及所製作的液晶面板的顯示試驗
將(2)中所製作的附有接著劑的電路基板在80℃下進行1小時乾燥處理。繼而，使用倒裝晶片接合裝置(東麗工程(股)製造、FC-2000)，在附有接著劑的電路基板上進行半導體晶片的倒裝晶片接合。將半導體晶片(附有包含銅30μm+無鉛焊料(lead-free solder)15μm的凸塊電極、448凸塊/晶片、間距為60μm、周邊(peripheral)配置、7.5mm見方晶片)固定於加熱至80℃的接合平台上，在溫度為80℃、壓力為15N/晶片、時間為5秒鐘的條件下，暫時壓接於上述附有接著劑的電路基板上後，在溫度為250℃、壓力為200N/晶片的條件下，將時間設為10秒鐘進行正式壓接。1個部位的接合結束後，向下一接合重複進行，藉此在所有300個部位的位置進行半導體晶片的接合。另外，自接合開始至結束為止所花費的時間為60分鐘。藉由基板切割裝置分割已結束接合的電路基板，藉此製作300個附有半導體的電路基板。另外，所得的附有半導體的電路基板是半導體晶片與電路基板藉由兩者的連接而構成菊鍊(daisy chain)者。藉由將所製作的各附有半導體的電路基板組入液晶基板，而製作液晶面板(半導體裝置)並進行顯示試驗。進行顯示者判定為合格，因晶片與電路基板間產生連接不良而未顯示者判定為不合格。對300個液晶面板進行顯示試驗，將合格者的比例為99.5%以上設為A，將合格者的比例為95.0%以上~小於99.5%設為B，將合格者的比例小於 95.0%設為C。將結果表示於表1~表4(可靠性試驗前)。
(4)連接可靠性試驗後的液晶面板的顯示試驗
將(3)的液晶顯示試驗中合格的附有半導體的電路基板20個在85℃、60%RH的條件的恆溫恆濕槽中放置168小時進行吸濕。然後，在260℃、5秒鐘的回焊條件下進行回流焊(solder reflow)(吸濕回焊處理)。繼而，將附有半導體的電路基板在-40℃下維持5分鐘後，在125℃下維持5分鐘，並設為1循環，對10個樣品重複1000循環的該處理，對其餘的10個樣品重複2000循環的該處理。進行這些處理後，將附有半導體的電路基板組入液晶基板，藉此製作液晶面板並進行顯示試驗。對於1000循環後、2000循環後的各樣品，將10個全部進行顯示者設為A，將因產生連接不良而全未顯示者設為C。將結果表示於表1~表4(可靠性試驗後/1000循環、2000循環)。
(5)在23℃、55%RH下放置1個月及3個月後的接著劑的熔融黏度測定
對在(1)的步驟中在23℃、55%RH的環境下分別保管1個月及3個月的接著劑膜，在以下條件下對熔融黏度進行測定。在最低熔融黏度為100Pa．s以上、10000Pa．s以下時，評價為A，將其以外的情形評價為C。
動態黏彈性測定裝置：MCR-302(日本安東帕(Anton Paar Japan)(股)製造)、試樣尺寸：直徑為15mm、厚度為0.8mm
升溫速度：2℃/分鐘、測定頻率：1Hz、測定應變：9%、測定溫度範圍：0℃~150℃。
根據實施例1~實施例30與比較例1~比較例8的對比可知，不含有酸改質松香的接著劑的保存性差，在使用將捲繞體在23℃、55%RH的環境下保管1個月及3個月的接著劑膜時，完全無法獲得連接可靠性。另外可知，在接著劑含有無機粒子時，即便是在進行吸濕回焊處理及熱循環處理時，亦保持連接可靠性。
實施例31~實施例46及比較例9~比較例12
將有機溶劑可溶性聚醯亞胺B變更為有機溶劑可溶性聚醯亞胺C，除此以外，以與實施例8~實施例14、實施例22~實施例30、比較例3、比較例4、比較例7、比較例8相同的方式，製作接著劑並進行評價，結果分別獲得與實施例8~實施例14、實施例22~實施例30、比較例3、比較例4、比較例7、比較例8的液晶顯示試驗的評價結果相同的結果。
實施例47~實施例76
將潛在性硬化劑的酸改質松香KE-604變更為酸改質松香KR-120，除此以外，以與實施例1~實施例30相同的方式，製作半導體用接著劑並進行評價，結果分別獲得與實施例1~實施例30的液晶顯示試驗的評價結果相同的結果。
實施例77~實施例83及比較例13、比較例14
對於表5所示的(a)成分~(f)成分，以成為表5所示的調配比的方式進行調合，以與實施例1相同的方式，製作接著劑並進行評價，結果獲得表5的液晶顯示試驗的評價結果。
[產業上之可利用性]
本發明的接著劑可用作接著劑，其用於在電腦、可攜式終端機中所使用的電子零件或散熱板與印刷基板或軟性基板的接著、及基板彼此的接著。而且，可較佳地用作半導體用接著劑，其在將LSI、LED、雷射二極體等半導體晶片接著或直接電性接合於軟性基板、玻璃環氧基板、玻璃基板、陶瓷基板等電路基板時使用。

Claims (7)

  1. 一種接著劑，其含有(a)聚醯亞胺、(b)環氧化合物、(c)酸改質松香及鹼性潛在性硬化劑，且相對於上述(b)環氧化合物100質量份，上述(c)酸改質松香的含量為5質量份以上、30質量份以下。
  2. 如申請專利範圍第1項所述之接著劑，其中上述(a)聚醯亞胺是具有通式(2)或通式(3)所示的結構、且相對於聚合物總量而含有5質量%~15質量%的通式(1)所示的結構作為通式(2)或通式(3)中的R4的聚合物；式中，R1表示2價的烴基，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同；R2表示1價的烴基，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同；n表示1~10的整數；式中，R3表示4價~14價的有機基，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同；另外，R4表示2價~12價的有機基，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同；另外，R3、R4的至少一個為芳香族基，上述芳香族基含有至少一個選自由1,1,1,3,3,3-六氟丙基、異丙基、醚基、硫醚基及SO2基所組成的組群的1個以上的基團；R5、R6表示選自由酚性羥基、磺酸基及硫醇基所組成的組群的1個以上的基團，在1分子內可相同亦可不同，且在不同的分子內可相同亦可不同；X表示1價的有機基；m表示8~200的整數；α、β分別表示0~10的整數、α+β表示0~10的整數；其中重複數m中，20莫耳%~90莫耳%是表示α+β=1~10。
  3. 如申請專利範圍第1項或第2項所述之接著劑，其中進一步含有(d)無機粒子，且相對於(a)~(d)的總量，(d)無機粒子的含量為30質量%~80質量%。
  4. 一種接著劑膜，其包含如申請專利範圍第1項至第3項中任一項所述之接著劑。
  5. 如申請專利範圍第4項所述之接著劑膜，其在23℃、55%RH的環境下保管1個月後的最低熔融黏度為於100Pa．s~10000Pa．s的範圍內。
  6. 一種半導體裝置，其包含如申請專利範圍第1項至第3項中任一項所述之接著劑的硬化物、或如申請專利範圍第4項或第5項所述之接著劑膜的硬化物。
  7. 一種半導體裝置的製造方法，其使如申請專利範圍第1項至第3項中任一項所述之接著劑、或如申請專利範圍第4項或第5項所述之接著劑膜介在第一電路構件與第二電路構件之間，並藉由加熱加壓將上述第一電路構件與上述第二電路構件電性連接。
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