TWI506755B - Light-emitting diode with positioning structure - Google Patents

Description

Light-emitting diode with positioning structure

The present invention relates to a light-emitting diode, and more particularly to a light-emitting diode having a positioning structure.

Conventionally, the photomask needs to be aligned with the alignment structure on the growth substrate before the epitaxial layer is formed on the growth substrate. However, the alignment structure is formed in a defined region of the structure of the light-emitting diode, resulting in the singularity of the light-emitting diode structure can only be invalidated.

The invention relates to a light-emitting diode with a positioning structure, which can improve the problem of the area ineffective area and reduce the scrapping cost.

According to an embodiment of the invention, a light emitting diode having a positioning structure is proposed. The light emitting diode comprises a substrate, a plurality of light emitting diode grains, a plurality of cutting tracks and at least one positioning structure. Light-emitting diode crystal grains, wherein the light-emitting diode crystal grains are disposed on the substrate. The dicing streets are separated by such luminescent diode grains. The positioning structure is disposed on the substrate and at the intersection of the cutting lanes.

In order to better understand the above and other aspects of the present invention, The preferred embodiment is described in detail with reference to the accompanying drawings.

100‧‧‧Lighting diode

110‧‧‧Substrate

110u‧‧‧ upper surface

120‧‧‧Light-emitting diode grains

121‧‧‧First type semiconductor epitaxial layer

122‧‧‧Lighting layer

123‧‧‧Second type semiconductor epitaxial layer

130‧‧‧ cutting road

140‧‧‧ Positioning structure

141‧‧‧ alignment structure

1411‧‧‧First straight line structure

1412‧‧‧Second straight line structure

142‧‧‧ alignment anchor

1421‧‧‧First match anchor

1422‧‧‧Second match anchor

1423‧‧‧ third match anchor

1424‧‧‧ fourth match anchor

143‧‧‧ Identification marks

144‧‧‧ sexuality

1441‧‧‧First Signature

1442‧‧‧Secondary mark

1443‧‧‧Third-direction mark

1444‧‧‧4th directional mark

H1, H2‧‧‧ height

FIG. 1A is a top plan view of a light emitting diode having a positioning structure according to an embodiment of the invention.

Fig. 1B is a cross-sectional view taken along line 1B-1B' in Fig. 1A.

FIG. 1C is an enlarged view showing the positioning structure of FIG. 1A.

2 is a top plan view of a positioning structure in accordance with another embodiment of the present invention.

Referring to FIGS. 1A and 1B, FIG. 1A is a plan view of a light-emitting diode having a positioning structure according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line 1B-1B' of FIG. 1A. The light emitting diode 100 includes a substrate 110, a plurality of light emitting diode dies 120, a plurality of dicing streets 130, and at least one positioning structure 140.

The light emitting diode die 120 is formed on the upper surface 110u of the substrate 110. The dicing streets 130 are spaced apart from the luminescent diode dies 120, that is, the luminescent diode dies 120 are isolated from each other by the dicing streets 130. In a subsequent cutting process, the tool passes through the scribe line 130 to completely separate the light emitting diode dies 120. The light emitting diode die 120 includes a first type semiconductor epitaxial layer 121, a light emitting layer 122, and a second type semiconductor epitaxial layer 123 sequentially formed on the upper surface 110u of the substrate 110, wherein the light emitting layer 122 is located in the first type semiconductor The epitaxial layer 121 is between the epitaxial layer 121 and the second type semiconductor epitaxial layer 123.

The first type semiconductor epitaxial layer 121 is, for example, a P type semiconductor layer, and the second type semiconductor epitaxial layer 123 is an N type semiconductor layer; or the first type semiconductor epitaxial layer 121 is an N type semiconductor layer, and the first type The two-type semiconductor epitaxial layer 123 is a P-type semiconductor layer. Wherein, the P-type semiconductor layer is, for example, a nitrogen-based semiconductor layer doped with a trivalent element such as boron (B), indium (In), gallium (Ga) or aluminum (Al), and the N-type semiconductor layer is, for example, doped with phosphorus ( A nitrogen-based semiconductor layer of a pentavalent element such as P), ruthenium (Ti), or arsenic (As). The light-emitting layer 122 may be a three-five-group two-element compound semiconductor (for example, gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), gallium nitride (GaN)), and a tri-five multi-element compound. Semiconductor (for example, aluminum gallium arsenide (AlGaAs), gallium arsenide (GaAsP), aluminum gallium indium phosphide (AlGaInP), aluminum indium gallium arsenide (AlInGaAs)) or a group of two or six elemental compound semiconductors (for example, selenium) Cadmium (CdSe), cadmium sulfide (CdS), zinc selenide (ZnSe).

The positioning structure 140 is used to align with a photomask (not shown). During the alignment of the reticle and the illuminating diode, the stepper drives the illuminating diode 100 to align the positioning structure 140 with the positioning structure (not shown) on the reticle, thereby positioning the reticle relative to the substrate 110. The first type semiconductor epitaxial layer 121, the light emitting layer 122, and the second type semiconductor epitaxial layer 123 are formed on a predetermined region of the substrate 110 at an exposure position.

The positioning structure 140 is formed on the upper surface 110u of the substrate 110 and located at the intersection of the dicing streets 130. In a subsequent cutting process, the tool can cut away the positioning structure 140. Since the positioning structure 140 is located on the dicing street 130 without occupying the area of the illuminating diode die 120, the problem of the area ineffective area can be improved, and the scrapping cost can be reduced.

In addition, the positioning structure 140 and the LED die 120 can be the same The structure is formed in one process, thereby forming the same epitaxial layer as the light-emitting diode die 120, and the height H1 of the positioning structure 140 is substantially the same as the height H2 of the light-emitting diode die 120. In detail, the positioning structure 140 also includes a first type semiconductor epitaxial layer 121, a light emitting layer 122, and a second type semiconductor epitaxial layer 123, wherein the light emitting layer 122 is located in the first type semiconductor epitaxial layer 121 and the second type semiconductor stripe Between the layers 123.

The number of positioning structures 140 may be one or more. When the number of the positioning structures 140 is two, the error in the rotation angle after the alignment of the LEDs 100 with the reticle (not shown) can be reduced.

Please refer to FIG. 1C, which shows an enlarged view of the positioning structure of FIG. 1A. Each positioning structure 140 includes a registration structure 141, a plurality of alignment anchors 142, and an identification mark 143.

In this embodiment, the alignment structure 141 includes a first linear structure 1411 and a second linear structure 1412. The second straight line structure 1412 intersects with the first straight line structure 1411 to form a cross structure, which improves the alignment accuracy of the light emitting diode 100 and the reticle. The second linear structure 1412 can be orthogonal or oblique to the first linear structure 1411. In this embodiment, the second linear structure 1412 is orthogonal to the first linear structure 1411 to form a cross structure. Compared with the skew, the orthogonal second linear structure 1412 and the first linear structure 1411 can improve the alignment accuracy of the LED and the reticle. In another embodiment, the number of linear structures of the alignment structure 141 is not limited to two, and may include two or more linear structures.

Each of the alignment anchors 142 is disposed at an end of the alignment structure 141. Through The double confirmation of the alignment anchor 142 and the positioning structure on the reticle can improve the alignment accuracy of the illuminating diode 100 and the reticle. Further, through the shape recognition of the alignment anchor 142, the degree of grayscale variation can be imaged, and the misjudgment in the alignment is reduced. In this embodiment, the align anchor point 142 includes a first align anchor point 1421, a second align anchor point 1422, a third align anchor point 1423, and a fourth align anchor point 1424, wherein the first align anchor point 1421 and second alignment anchors 1422 are respectively formed at opposite ends of the first linear structure 1411, and third alignment anchors 1423 and fourth alignment anchors 1424 are respectively formed at opposite ends of the second linear structure 1412. The shape of any one of the first registration anchor 1421, the second alignment anchor 1422, the third alignment anchor 1423, and the fourth alignment anchor 1424 is a closed loop or a number, wherein the ring is, for example, a circle , oval or polygonal.

The identification mark 143 is formed on the upper surface 110u of the substrate 110 and adjacent to the alignment anchor 142, the first linear structure 1411, or the second linear structure 1412. In this embodiment, the shape of each of the alignment anchors 142 is the same. In this design, the shape or symbol of the identification marks 143 of the positioning structures 140 may be different, so that the positioning structures 140 provide different positioning information through the identification marks 143. . Further, when the stepper searches for a pair of bit structures 141, the alignment structure provided by the identification mark 143 can be used to drive the alignment structure 141 of the substrate 110 and the preset alignment structure on the mask. Bit. In another embodiment, the shape of the alignment anchors 142 of the positioning structures 140 are different, so that the positioning structures 140 provide different positioning information through the different alignment anchors 142; The identification mark 143 is omitted.

Please refer to FIG. 2, which illustrates a top view of a positioning structure in accordance with another embodiment of the present invention. In this embodiment, the positioning structure 140 further includes a plurality of directional marks 144 formed adjacent to the first aligning anchor point 1421 and the second aligning anchor point 1422, respectively. These directional marks 144 are respectively provided for different mask alignment. For example, the directional mark 144 includes a first directional mark 1441, a second directional mark 1442, a third directional mark 1443, and a fourth directional mark 1444, wherein the first type semiconductor epitaxial layer 121 is covered by the first reticle (not shown) is formed by aligning with the first directional mark 1441; the luminescent layer 122 is formed by aligning the second reticle (not shown) with the second directional mark 1442, and the second type of semiconductor is epitaxial. The layer 123 is formed by aligning with the third directional mark 1443 by a third mask (not shown). The other structural layers may be formed by aligning with the fourth directional mark 1444 by a fourth photomask (not shown).

In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100‧‧‧Lighting diode

110‧‧‧Substrate

120‧‧‧Light-emitting diode grains

130‧‧‧ cutting road

140‧‧‧ Positioning structure

Claims (9)

A light-emitting diode having a positioning structure, comprising: a substrate; a plurality of light-emitting diode crystal grains formed on the substrate; a plurality of cutting channels separating the light-emitting diode crystal grains; and at least one positioning structure forming On the substrate and at the intersection of the scribe lines, and having the same height as the luminescent diode dies. The light-emitting diode according to claim 1, wherein the positioning structure comprises: a pair of bit structures including a cross structure; and a plurality of para-position anchor points respectively disposed at ends of the cross structure. The light-emitting diode according to claim 2, wherein the shape of the para-antennas is different. The light-emitting diode of claim 2, wherein the alignment anchors have the same shape, and the positioning structure further comprises: an identification mark formed on the substrate adjacent to the alignment anchors. The light-emitting diode according to claim 2, wherein the alignment structure comprises: a first linear structure; and a second linear structure orthogonal to the first linear structure. The light-emitting diode of claim 5, wherein the positioning structure further comprises: two first alignment anchors respectively formed at opposite ends of the first linear structure; and two second alignment anchors And formed at opposite ends of the second straight line structure, respectively. The light-emitting diode according to claim 6, wherein any one of the first para-position anchor and the second para-anchor is annular. The light-emitting diode according to claim 6, further comprising: a complex directional mark formed adjacent to the first pair of anchor points and the second pair of anchor points respectively. The light-emitting diode according to claim 1, wherein the light-emitting diode crystal grain is composed of the same epitaxial structure as the positioning structure.