TWI598465B - 常壓電漿鍍膜裝置 - Google Patents
常壓電漿鍍膜裝置 Download PDFInfo
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- TWI598465B TWI598465B TW106103033A TW106103033A TWI598465B TW I598465 B TWI598465 B TW I598465B TW 106103033 A TW106103033 A TW 106103033A TW 106103033 A TW106103033 A TW 106103033A TW I598465 B TWI598465 B TW I598465B
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- 239000011248 coating agent Substances 0.000 title claims description 48
- 238000000576 coating method Methods 0.000 title claims description 48
- 239000002243 precursor Substances 0.000 claims description 87
- 238000007581 slurry coating method Methods 0.000 claims description 27
- 239000002002 slurry Substances 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Nozzles (AREA)
- Coating Apparatus (AREA)
- Coating By Spraying Or Casting (AREA)
Description
本發明是有關於一種電漿裝置,且特別是有關於一種常壓電漿鍍膜裝置。
常壓電漿火炬裝置通常由具有高電位差之管狀電極所組成,將工作氣體電離後產生電漿,管狀電極下方連接噴嘴將電漿火炬穩定噴出。而常壓電漿鍍膜裝置係在一大氣壓下,於其二電極之間施加高壓電場,先將工作氣體游離化來產生電漿,並將鍍膜前驅物與電漿混合後沉積於基板上成膜。常壓電漿鍍膜技術可取代極為昂貴且維護手續繁雜的真空電漿鍍膜技術。此外,常壓電漿鍍膜技術的量產流程具有連續性,因此可降低真空電漿鍍膜批次製造的人力成本。
然而,目前常壓電漿鍍膜技術最大的瓶頸在於大氣環境下各種氣體粒子碰撞劇烈,如何精準控制鍍膜前驅物與電漿的混合將是關鍵技術。一種習知技術係直接將鍍膜前驅物直接噴向電漿火炬。然而,這樣的方式不僅容易造成鍍膜前驅物逸散於大氣中,而造成鍍膜前驅物浪費,也會有
鍍膜前驅物與電漿混合時間過短,而造成鍍膜前驅物與電漿混合不均的問題,進而導致薄膜品質不佳。
另一種習知技術係在常壓電漿鍍膜裝置之鄰近於噴嘴處或噴嘴中設置封閉渠道,再透過封閉渠道將鍍膜前驅物注入電漿腔體內使其與電漿混合。但是,這樣的方式,由於電漿是高反應性電離氣體,前驅物於封閉渠道由於滯留時間過長容易反應過度,造成前驅物容易沉積於封閉渠道內或電漿腔體內部,而造成汙染或堵塞。此外,這些汙染物不僅難以清理,且對於沉積薄膜的品質有負面影響。而且,前驅物氣流注入電漿腔體時也會電漿氣流造成干擾,進而導致噴塗不均的現象。
因此,本發明之一目的就是在提供一種常壓電漿鍍膜裝置,其噴嘴具有平滑輪廓,如此藉由鍍膜前驅物流體本身的黏性、以及從噴嘴噴出之高速流動電漿氣流在噴口附近形成之低壓區域所產生之吸力,鍍膜前驅物可順利沿著噴嘴之平滑輪廓流動至噴嘴之噴口而與噴出之電漿瞬間均勻混合。故,不僅可有效提升鍍膜前驅物與電漿的混合均勻度,減少前驅物與電漿反應過度沉積於封閉渠道,更可大幅改善鍍膜前驅物散逸於大氣而造成浪費的問題。
本發明之另一目的是在提供一種常壓電漿鍍膜裝置,其不具封閉渠道來引導鍍膜前驅物與電漿混合,因此可解決習知技術利用封閉渠道將鍍膜前驅物注入電漿腔體
造成沉積汙染進而影響成膜品質的問題,而可提高噴塗均勻性,進而可提升鍍膜品質。
根據本發明之上述目的,提出一種常壓電漿鍍膜裝置。此常壓電漿鍍膜裝置包含常壓電漿產生器以及至少一前驅物進料治具。常壓電漿產生器包含管狀電極以及噴嘴。噴嘴設於管狀電極下,且配置以噴射電漿。噴嘴具有噴口以及平滑輪廓,且此平滑輪廓之外徑由管狀電極往噴口漸縮。至少一前驅物進料治具鄰設於管狀電極與噴嘴,且配置以朝噴嘴之平滑輪廓噴射鍍膜前驅物,以使鍍膜前驅物沿著平滑輪廓流至噴口前。
依據本發明之一實施例,上述之常壓電漿產生器更包含棒狀電極設於管狀電極內。
依據本發明之一實施例,上述之平滑輪廓為流線形輪廓。
依據本發明之一實施例,上述之至少一前驅物進料治具包含複數個前驅物進料治具,這些前驅物進料治具圍設於噴嘴及/或管狀電極外。
依據本發明之一實施例,上述之前驅物進料治具之間具有相同間距。
依據本發明之一實施例,上述之至少一前驅物進料治具係環狀前驅物進料治具,此環狀前驅物進料治具環設於噴嘴及/或管狀電極外。
依據本發明之一實施例,上述之環狀前驅物進料治具具有環狀流道。
依據本發明之一實施例,上述之環狀流道具有環狀開口,且此環狀開口與噴嘴及/或管狀電極相對。
依據本發明之一實施例,上述之環狀流道具有複數個開口,這些開口與噴嘴及/或管狀電極相對。
依據本發明之一實施例,上述之開口之間具有相同間距。
100‧‧‧常壓電漿鍍膜裝置
100a‧‧‧常壓電漿鍍膜裝置
110‧‧‧常壓電漿產生器
112‧‧‧管狀電極
112a‧‧‧腔室
114‧‧‧噴嘴
114a‧‧‧噴口
114b‧‧‧平滑輪廓
116‧‧‧棒狀電極
120‧‧‧前驅物進料治具
122‧‧‧鍍膜前驅物
130‧‧‧電源
140‧‧‧工作氣體
150‧‧‧電漿
160‧‧‧前驅物進料治具
162‧‧‧環狀流道
164‧‧‧開口
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:〔圖1〕係繪示依照本發明之一實施方式的一種常壓電漿鍍膜裝置的裝置示意圖;以及〔圖2〕係繪示依照本發明之一實施方式的一種常壓電漿鍍膜裝置的裝置示意圖。
請參照圖1,其係繪示依照本發明之一實施方式的一種常壓電漿鍍膜裝置的裝置示意圖。在本實施方式中,常壓電漿鍍膜裝置100主要可包含常壓電漿產生器110以及至少一前驅物進料治具120。在一些實施例中,常壓電漿產生器110主要可包含管狀電極112以及噴嘴114。管狀電極112具有腔室112a。在一些示範例子中,常壓電漿產生器110更包含棒狀電極116,其中棒狀電極116設於管狀電極
112之腔室112a中。電源130之二極分別電性連接管狀電極112與棒狀電極116,以使管狀電極112與棒狀電極116之間具有電位差。在另一些示範例子中,常壓電漿產生器100更包含另一管狀電極,此另一管狀電極設於管狀電極112之上方,且此另一管狀電極之腔室與管狀電極112之腔室112a連通,其中電源130之二極分別電性連接管狀電極112與此另一管狀電極。工作氣體140可導入管狀電極112之腔室112a中。工作氣體140可為用以產生電漿150之氣體。
如圖1所示,噴嘴114設於管狀電極112下。噴嘴114係配置以噴射在管狀電極112之腔室112a內所產生之電漿150。噴嘴114具有噴口114a,電漿150氣流可從噴嘴114之噴口114a噴出。電漿150氣流從噴嘴114之噴口114a噴出時,可在噴口114a附近形成低壓區域。噴嘴114具有平滑輪廓114b。此平滑輪廓114b之外徑由噴嘴114與管狀電極112接合處往噴口114a的方向漸縮,即平滑輪廓114b與噴嘴114之軸心線之間的距離自噴嘴114與管狀電極112接合處至噴口114a的方向漸減。在一些實施例中,噴嘴114之平滑輪廓114b為流線形輪廓。
前驅物進料治具120鄰設於管狀電極112與噴嘴114。舉例而言,如圖1所示,前驅物進料治具120設於廣狀電極112外側,且位於噴嘴114外側上方。前驅物進料治具120配置以朝噴嘴114之平滑輪廓114b噴射鍍膜前驅物122,藉以使鍍膜前驅物122沿著噴嘴114的平滑輪廓114b流至噴口114a前來與電漿150混合。在一些示範例子中,前
驅物進料治具120可朝噴嘴114與管狀電極112接合處附近噴射鍍膜前驅物122。鍍膜前驅物122可為液體、氣體、霧氣或粉末狀固體。前驅物進料治具120與前驅物來源管線連接。
在本實施方式中,前驅物進料治具120可為管狀治具,且前驅物進料治具120之數量可為一個或數個。當常壓電漿鍍膜裝置100包含數個前驅物進料治具120時,這些前驅物進料治具120可圍設於管狀電極112及/或噴嘴114外。在一些示範例子中,這些前驅物進料治具120之間可具有相同間距。當然,這些前驅物進料治具120之間亦可具有不同的間距。
噴嘴114噴出之高速流動的電漿150氣流時,會在噴口114a附近形成之低壓區域,此低壓區域可對鍍膜前驅物122產生吸引力。因此,當前驅物進料治具120朝噴嘴114之平滑輪廓114b噴射鍍膜前驅物122時,因鍍膜前驅物122之黏性、以及噴口114a附近之低壓區域對鍍膜前驅物122的吸引,再加上噴嘴114具平滑輪廓114b,因此鍍膜前驅物122可自管狀電極112外壁沿著噴嘴114之平滑輪廓114b流動至噴口114a前,而與噴口114a噴出之電漿150瞬間混合。故,常壓電漿鍍膜裝置100的應用不僅可有效改善鍍膜前驅物122散逸於大氣中而造成浪費與汙染的問題,更可在極短時間內提高鍍膜前驅物122與電漿150混合的均勻度同時避開前驅物122與電漿150過度反應的問題,進而可提升鍍膜的品質。
請參照圖2,其係繪示依照本發明之一實施方式的一種常壓電漿鍍膜裝置的裝置示意圖。本實施方式之常壓電漿鍍膜裝置100a的架構大致上與上述實施方式之常壓電漿鍍膜裝置100的架構相同,二者之間的差異在於,常壓電漿鍍膜裝置100a包含單一個前驅物進料治具160,且此前驅物進料治具160係環狀前驅物進料治具。在常壓電漿鍍膜裝置100a中,常壓電漿產生器110穿設於環狀之前驅物進料治具160中,且前驅物進料治具160可環設於噴嘴114及/或管狀電極112外。舉例而言,前驅物進料治具160環設於管狀電極112之外壁外。前驅物進料治具160與前驅物來源管線連接。
在一些實施例中,環狀之前驅物進料治具160具有環狀流道162,且此環狀流道162具有一個環狀之開口164,其中此開口164與噴嘴114及/或管狀電極112相對,以利朝噴嘴114及/或管狀電極112噴射鍍膜前驅物122。舉例而言,如圖2所示,前驅物進料治具160之環狀的開口164與管狀電極112之外壁相對。在另一些實施例中,前驅物進料治具160具有環狀流道162,且此環狀流道162具有數個開口164,這些開口164與噴嘴114及/或管狀電極112相對。這些開口164環設於噴嘴114及/或管狀電極112外,且這些開口164之間可具有相同間距、或不同間距。
由上述之實施方式可知,本發明之一優點就是因為本發明之常壓電漿鍍膜裝置之噴嘴具有平滑輪廓,如此藉由鍍膜前驅物流體本身的黏性、以及從噴嘴噴出之高速流
動電漿氣流在噴口附近形成之低壓區域所產生之吸引力,鍍膜前驅物可順利沿著噴嘴之平滑輪廓流動至噴嘴之噴口而與噴出之電漿均勻混合。因此,不僅可瞬間有效提升鍍膜前驅物與電漿的混合均勻度,避免前驅物與電漿反應過度,更可大幅改善鍍膜前驅物散逸於大氣而造成浪費的問題。
由上述之實施方式可知,本發明之另一優點就是因為本發明之常壓電漿鍍膜裝置不具封閉渠道來引導鍍膜前驅物與電漿混合,因此可解決習知技術利用封閉渠道將鍍膜前驅物注入電漿腔體造成沉積汙染進而影響成膜品質的問題,而可提高噴塗均勻性,進而可提升鍍膜品質。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何在此技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧常壓電漿鍍膜裝置
110‧‧‧常壓電漿產生器
112‧‧‧管狀電極
112a‧‧‧腔室
114‧‧‧噴嘴
114a‧‧‧噴口
114b‧‧‧平滑輪廓
116‧‧‧棒狀電極
120‧‧‧前驅物進料治具
122‧‧‧鍍膜前驅物
130‧‧‧電源
140‧‧‧工作氣體
150‧‧‧電漿
Claims (10)
- 一種常壓電漿鍍膜裝置,包含:一常壓電漿產生器,包含:一管狀電極;以及一噴嘴,設於該管狀電極下,且配置以噴射一電漿,其中該噴嘴具有一噴口以及一平滑輪廓,且該平滑輪廓之一外徑由該管狀電極往該噴口漸縮;以及至少一前驅物進料治具,鄰設於該管狀電極與該噴嘴,且配置以朝該噴嘴之該平滑輪廓噴射一鍍膜前驅物,以使該鍍膜前驅物沿著該平滑輪廓流至該噴口前。
- 如申請專利範圍第1項之常壓電漿鍍膜裝置,其中該常壓電漿產生器更包含一棒狀電極設於該管狀電極內。
- 如申請專利範圍第1項之常壓電漿鍍膜裝置,其中該平滑輪廓為一流線形輪廓。
- 如申請專利範圍第1項之常壓電漿鍍膜裝置,其中該至少一前驅物進料治具包含複數個前驅物進料治具,該些前驅物進料治具圍設於該噴嘴及/或該管狀電極外。
- 如申請專利範圍第4項之常壓電漿鍍膜裝置,其中該些前驅物進料治具之間具有相同間距。
- 如申請專利範圍第1項之常壓電漿鍍膜裝置,其中該至少一前驅物進料治具係一環狀前驅物進料治具,該環狀前驅物進料治具環設於該噴嘴及/或該管狀電極外。
- 如申請專利範圍第6項之常壓電漿鍍膜裝置,其中該環狀前驅物進料治具具有一環狀流道。
- 如申請專利範圍第7項之常壓電漿鍍膜裝置,其中該環狀流道具有一環狀開口,且該環狀開口與該噴嘴及/或該管狀電極相對。
- 如申請專利範圍第7項之常壓電漿鍍膜裝置,其中該環狀流道具有複數個開口,該些開口與該噴嘴及/或該管狀電極相對。
- 如申請專利範圍第9項之常壓電漿鍍膜裝置,其中該些開口之間具有相同間距。
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| CN201710161397.6A CN108342713B (zh) | 2017-01-25 | 2017-03-17 | 常压等离子镀膜装置 |
| JP2017107939A JP6385524B2 (ja) | 2017-01-25 | 2017-05-31 | 大気圧プラズマコーティング装置 |
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| CN108611623A (zh) * | 2018-06-28 | 2018-10-02 | 中国科学院电工研究所 | 抑制固体介质材料二次电子产额的喷涂镀膜装置及方法 |
| TWI666339B (zh) * | 2018-08-21 | 2019-07-21 | 馗鼎奈米科技股份有限公司 | 電漿鍍膜裝置 |
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| CN109267037A (zh) * | 2018-11-21 | 2019-01-25 | 新疆大学 | 常压等离子体增强化学气相沉积方法及采用该方法的设备 |
| TWI686106B (zh) * | 2019-01-25 | 2020-02-21 | 國立清華大學 | 場發射手持式常壓電漿產生裝置 |
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| CN2735710Y (zh) * | 2004-09-11 | 2005-10-19 | 石家庄钢铁股份有限公司 | 一种等离子体驱动装置 |
| CN101163370A (zh) * | 2006-10-10 | 2008-04-16 | 馗鼎奈米科技股份有限公司 | 等离子导引机构及应用该导引机构的等离子放电装置 |
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| US20050178330A1 (en) * | 2002-04-10 | 2005-08-18 | Goodwin Andrew J. | Atmospheric pressure plasma assembly |
| US20090068375A1 (en) * | 2007-09-10 | 2009-03-12 | Peter Dobbyn | Atmospheric Pressure Plasma |
| US20090142511A1 (en) * | 2007-11-29 | 2009-06-04 | Haley Jr Robert P | Process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating of a substrate |
| US20150259802A1 (en) * | 2014-03-14 | 2015-09-17 | The Board Of Trustees Of The University Of Illinois | Apparatus and method for depositing a coating on a substrate at atmospheric pressure |
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| CN108611623A (zh) * | 2018-06-28 | 2018-10-02 | 中国科学院电工研究所 | 抑制固体介质材料二次电子产额的喷涂镀膜装置及方法 |
| CN108611623B (zh) * | 2018-06-28 | 2020-07-31 | 中国科学院电工研究所 | 抑制固体介质材料二次电子产额的喷涂镀膜装置及方法 |
| TWI666339B (zh) * | 2018-08-21 | 2019-07-21 | 馗鼎奈米科技股份有限公司 | 電漿鍍膜裝置 |
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| JP6385524B2 (ja) | 2018-09-05 |
| CN108342713A (zh) | 2018-07-31 |
| CN108342713B (zh) | 2020-06-26 |
| JP2018119206A (ja) | 2018-08-02 |
| TW201827625A (zh) | 2018-08-01 |
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