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TWI589031B - Light-emitting device transfer method - Google Patents

Light-emitting device transfer method Download PDF

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Publication number
TWI589031B
TWI589031B TW103136144A TW103136144A TWI589031B TW I589031 B TWI589031 B TW I589031B TW 103136144 A TW103136144 A TW 103136144A TW 103136144 A TW103136144 A TW 103136144A TW I589031 B TWI589031 B TW I589031B
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TW
Taiwan
Prior art keywords
light
emitting elements
support plate
emitting
transferring
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TW103136144A
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English (en)
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TW201616679A (zh
Inventor
李玉柱
賴育弘
林子暘
Original Assignee
錼創科技股份有限公司
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Application filed by 錼創科技股份有限公司 filed Critical 錼創科技股份有限公司
Priority to TW103136144A priority Critical patent/TWI589031B/zh
Priority to US14/886,567 priority patent/US9583450B2/en
Publication of TW201616679A publication Critical patent/TW201616679A/zh
Application granted granted Critical
Publication of TWI589031B publication Critical patent/TWI589031B/zh

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Description

發光元件的轉移方法
本發明是有關於一種發光元件的轉移方法，特別是指一種利用非接觸式轉移的發光元件的轉移方法。
參閱圖1，一般的顯示裝置可包含一個具有電路的永久基板11，例如印刷電路板或TFT基板，及多個形成於該永久基板11，可發出紅光、綠光或藍光等不同光色，並可受該永久基板11控制的發光二極體12R、12G、12B，其中，該等發光二極體12R、12G、12B可畫分成多個畫素單元100，該每一個畫素單元100則至少會包含兩種可發出不同色光的發光二極體，圖1中是以每一個畫素單元100均包含3個可分別發出紅光、綠光，及藍光的發光二極體12R、12G、12B。
配合參閱圖2，習知要在該等畫素單元100設置該等發光二極體12R、12G、12B的方法，是先分別於一藍寶石暫時基板201上磊晶形成所要發出之光色，例如綠光的發光二極體12G後，再分別將該等可發出不同色光的發光二極體12R、12G、12B，利用多次轉移的方式，移轉至一永久基板202而得。該轉移的過程，一般是利用在該永久基板202預定接合該等發光二極體12R、12G、12B的 位置先形成焊墊203，並將形成於該藍寶石暫時基板201上的發光二極體12R、12G、12B對準焊墊203，再利用該藍寶石暫時基板201為施壓基板，按壓該等發光二極體12R、12G、12B，令該等發光二極體12R、12G、12B與相對應的該焊墊203結合後，再將該藍寶石基板201以例如雷射剝離(laser lift-off)方式移除，而將可發出不同光色的發光二極體12R、12G、12B轉移到該永久基板202。
然而，基於顯示裝置的光色設計要求，以及因為不同光色的發光二極體12R、12G、12B本身的色強度及亮度的差異，因此，不同光色的發光二極體其晶片大小及高度(如圖2所示)會有不同，所以，當利用按壓方式按壓該等發光二極體時，會因為該等發光二極體之間的高度差，而容易會有施力不均的問題，而為了避免該高度差造成的問題，一般大都利用調整該等焊墊203的高度，來彌補不同光色的發光二極體12R、12G、12B之間的高度差。然而，要精確的控制銲墊203的高度差，於製程而言並不容易。再者，由於現行的發光二極體12R、12G、12B尺寸漸趨微小，很難精準地對位結合發光二極體12R、12G、12B與該等銲墊203，因此很容易造成錯位誤差的問題。
因此，本發明之目的，即在提供一種發光元件的轉移方法。
於是，本發明的發光元件的轉移方法的一第一實施例，包含一步驟A、一步驟B，及一步驟C。
該步驟A是提供一個發光單元，該發光單元具有一個支撐板，及多個與該支撐板連接的發光元件。
該步驟B是將該等發光元件未與該支撐板連接之一側面向一封裝基板，且令該等發光元件與該封裝基板成一間距相對設置。
該步驟C是對該等發光單元施以一脫離步驟，使該等發光元件失去與該支撐件的連接，而令該等發光元件經由重力掉落至該封裝基板。
本發明之功效在於：透過重力而形成非接觸式的發光元件的轉移方式，讓發光元件利用自身重量，形成該發光元件與熔融的連接件之間接合的壓力，因此，可解決因為發光元件的高低落差所造成的發光元件轉移的問題。
2‧‧‧發光單元
21‧‧‧支撐板
22‧‧‧發光元件
221‧‧‧半導體磊晶層
222‧‧‧合金層
3‧‧‧封裝基板
31‧‧‧連接件
4‧‧‧發光單元
41‧‧‧支撐板
42‧‧‧發光元件
5‧‧‧發光單元
51‧‧‧支撐板
52‧‧‧發光元件
53‧‧‧連接層
A‧‧‧步驟
B‧‧‧步驟
C‧‧‧步驟
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中：圖1是一結構示意圖，說明習知顯示裝置的畫素單元；圖2是一流程示意圖，說明習知製備顯示裝置的發光元件轉移過程；圖3是一文字流程圖，說明本發明的一第一實施例；圖4是一流程示意圖，說明本發明的該第一實施例；圖5是一流程示意圖，說明本發明的一第二實施例；及圖6是一流程示意圖，說明本發明的一第三實施例。
配合參閱圖3、圖4，本發明發光元件的轉移方法的一第一實施例包含一步驟A、一步驟B，及一步驟C。
該步驟A是提供一個發光單元2。
該發光單元2具有一個支撐板21，及多個連接於該支撐板21連接的發光元件22。其中，該支撐板21是選自具有支撐性的基材，且可在經由實施一脫離步驟後，降低與該等發光元件22的連接性。具體的說，該支撐板21可選自例如藍膜、光解膠帶、熱解膠帶，或磁性塊材所構成，或是可利用在一玻璃、PC、壓克力，或藍寶石基材等表面形成藍膜、光解膠帶、熱解膠帶，或是在玻璃、PC、壓克力，或藍寶石摻混磁性材料而得。於本實施例中，該支撐板21是選自照射預定波長的光線即會降低黏著力的光解膠帶(UV tape)，一般而言，該預定波長為波長不大於400nm的紫外線光。
該等發光元件22具有可發出預定光色的半導體磊晶層221，及形成於該半導體磊晶層221表面的合金層222，其中，該等半導體磊晶層221可發出一種或多種不同光色，且該等半導體磊晶層221的高度可為相同或不同。由於該等半導體磊晶層221的磊晶膜層結構及相關材料的選擇為本技術領域所周知且非為本發明的重點，因此，不再多加贅述。
該步驟B是令該等發光元件22與一封裝基板3成一間距相對設置。
詳細的說，該封裝基板3具有一可用以控制該等發光元件22的電連接線路(圖未示)，該電連接線路於預定連接該等發光元件22的位置分別對應設有連接件31，且該等連接件31為選自共晶溫度介於150℃至300℃的合金材料所構成。具體的說，該封裝基板3可為印刷電路板、TFT基板，或CMOS基板等；該連接件31可選自錫合金(AuSn)、鋁銦合金(AlIn)，或金銦合金(AuIn)，但不限於此。
該步驟B是將該等發光元件22未與該支撐板21連接之一側，面向該封裝基板3，並令該等發光元件22與該封裝基板3成一間距相對設置。
該步驟C是令該等發光元件22經由重力掉落到該封裝基板3。
具體的說，該步驟C是對該發光單元2，施以一脫離步驟，使該發光單元2的該等發光元件22失去與該支撐板21的連接，而令該等發光元件22經由重力掉落到該封裝基板3。由於本實施例之該支撐板21為一光解膠帶，而該光解膠帶的特性為照射預定波長的光會喪失黏性，因此，該脫離步驟是經由對該支撐板21施以照射預定波長的光線，並同時加熱該封裝基板3的連接件31至不低於該等連接件31的共晶溫度，令該等連接件31成熔融狀態；因此，經照光處理後的該支撐板21會降低與該等發光元件22之黏著力，令該等發光元件22由該支撐板21(光解膠帶)經由重力掉落至該封裝基板3，而使該等發光元件22的該 合金層222與呈熔融狀的連接件31連接，最後再將該等連接件31冷卻，即可令該等發光元件22與該封裝基板3連接，而轉移至該封裝基板3。
本發明透過重力而形成利用非接觸式的發光元件轉移方式，讓該等發光元件22利用自身重量，形成與熔融的連接件31之間接合的壓力，不須像習知以接觸式方式轉移發光元件，在轉移接合的過程須藉由按壓給予一接合的外力，因此，可解決因為發光元件22的高低落差所造成的發光元件轉移的問題。
參閱圖5，本發明發光元件的轉移方法的一第二實施例，該第二實施例與該第一實施例相似，不同處在於，此處的步驟A之該等發光元件42與該支撐板41是由磁性連接，而該步驟C是透過消除該等發光元件42及該支撐板41其中任一的磁性，而使該支撐板41失去與該等發光元件42的連接性。
詳細的說，該支撐板41和該等發光元件42的連接處分別具有磁性，因此，可藉由磁力令該支撐板41和該等發光元件42相連接。其中，該支撐板41是選自具有支撐性及磁性的基材，例如鐵等具有磁性的基材，亦或者於非具有磁性的基材，例如玻璃、PC、壓克力、藍寶石基板等中加入具有磁性的材料，使其具有磁性。該等發光元件42可透過例如是具有磁性的一電極(圖未示)，亦或者於該半導體磊晶結構層中加入具有磁性的材料，使其具有磁性。因此該支撐板41與該等發光元件42可透過磁性連接 。
具體來說，該步驟C可藉由同時消除該等發光元件42及該支撐板41的之間的磁性，亦或者消除該等發光元件42及該支撐板41其中之一的磁性，而令發光元件42經由重力掉落至該封裝基板3與呈熔融狀的連接件31連接，接著再將該等連接件31冷卻，即可令該等發光元件42與該封裝基板3連接，而轉移至該封裝基板3。
參閱圖6，本發明發光元件的轉移方法的一第三實施例，該第三實施例與該第一實施例相似，不同處在於，此處該步驟A之該等發光元件52與該支撐板51之間是透過一連接層53彼此連接。
詳細的說，該支撐板51是選自具有支撐性的基材，例如玻璃、PC、壓克力、藍寶石基板、藍膜等，在此並不為限。
該連接層53是選自共晶溫度介於150℃至300℃的合金材料所構成，例如錫合金(AuSn)、鋁銦合金(AlIn)、金銦合金(AuIn)，但不限於此。於本實施例中，該步驟C之該脫離步驟是對該連接層53加熱到不低於該連接層53的共晶溫度，令該連接層53呈熔融狀態，而降低該支撐板51與該等發光元件52的連接性，讓該等發光元件52由該連接層53脫落，經由重力掉落至該封裝基板3與其對應的連接件31上，而將該等發光元件52轉移至該封裝基板3。特別說明的是，該連接層53亦可為一熱解膠帶，只要使該連接層53在加熱到一預定溫度後，能降低與該等發光元 件52的連接即可，在此並不為限。
此外，要說明的是，為了避免該等等發光元件22、42、52於重力掉落轉移的過程受到外界氣流等不確定因素的影響，導致掉落位置偏移，而造成轉移位置的偏差，較佳地，該步驟(C)是在一腔體(圖未示)中進行；更佳地，該腔體為一與外界隔絕的密封腔體；再更佳地，是令該腔體的真空度維持在小於760托爾(Torr)，又更佳地，該腔體的真空度小於10托爾(Torr)，而可令該等發光元件22、42、52在轉移過程中，不會受到外界氣流、氣壓等不確定因素的影響，而能精準對位轉移至該封裝基板3上。
綜上所述，本發明透過重力而形成利用非接觸式的晶片轉移方式，讓該等發光元件22、42、52利用自身重量，形成該等發光元件22、42、52與熔融的連接件31之間接合的壓力，不像習知在轉移接合的過程須藉由施壓給予一接合的外力，因此，可解決因為該等發光元件22、42、52的高低落差所造成的晶片轉移的問題，故確實能達成本發明之目的
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。
2‧‧‧發光單元
22‧‧‧發光元件
3‧‧‧封裝基板
A‧‧‧步驟
B‧‧‧步驟
C‧‧‧步驟

Claims (8)

  1. 一種發光元件的轉移方法，包含以下步驟：步驟A，提供一個發光單元，該發光單元具有一個支撐板，及多個與該支撐板連接的發光元件，其中該等發光元件與該支撐板透過一連接層彼此連接；步驟B，將該等發光元件未與該支撐板連接之一側面向一封裝基板，且令該等發光元件與該封裝基板成一間距相對設置，其中，該封裝基板於對應承接該等發光元件的位置具有多個用以連接該等發光元件的連接件；及步驟C，在該間距下對該發光單元施以一脫離步驟並令該等連接件融熔，使該等發光元件失去與該連接層的連接性，而令該等發光元件由該連接層脫落並經由重力掉落至該封裝基板，而與該熔融的該連接件連接，其中，該等發光元件是利用自身重量形成與該封裝基板之間接合的壓力，而與該封裝基板上的該等連接件連接。
  2. 如請求項1所述的發光元件的轉移方法，其中，該步驟C是在一腔體中，且該腔體內的壓力小於760托爾。
  3. 如請求項1所述的發光元件的轉移方法，其中，該等發光元件具有至少兩種不同的高度。
  4. 如請求項1所述的發光元件的轉移方法，其中，該封裝基板為印刷電路板、TFT基板或CMOS基板。
  5. 如請求項1所述的發光元件的轉移方法，其中，該等連接件是由共晶溫度介於150~300℃的合金材料構成。
  6. 如請求項1所述的發光元件的轉移方法，其中，該步驟A，該支撐板是一光解膠帶，該步驟A是經由對該光解膠帶照射預定波長的光線，降低該光解膠帶對該等發光元件之黏著力，而使該支撐板失去與該等發光元件的連接性。
  7. 如請求項1所述的發光元件的轉移方法，其中，該步驟A之該等發光元件與該支撐板是由磁性連接，該步驟C是經由消除該等發光元件及該支撐板其中任一的磁性，而使該支撐板失去與該等發光元件的連接性。
  8. 如請求項1所述的發光元件的轉移方法，其中，該連接層是由共晶溫度介於150~300℃的合金材料構成，該步驟C是對該連接層加熱到不小於該連接層的共晶溫度，令該連接層成熔融狀，而使該支撐板失去與該等發光元件的連接性。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201208107A (en) * 2010-08-03 2012-02-16 Ind Tech Res Inst Light emitting diode chip, package structure of the same, and fabricating method thereof
TW201304644A (zh) * 2011-07-04 2013-01-16 Ind Tech Res Inst 軟性電子元件的製法

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* Cited by examiner, † Cited by third party
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201208107A (en) * 2010-08-03 2012-02-16 Ind Tech Res Inst Light emitting diode chip, package structure of the same, and fabricating method thereof
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