TWI588500B - Semiconductor device measurement method - Google Patents

Description

Semiconductor device measurement method Field of invention

The present invention relates to a semiconductor device measurement method and, more particularly, to a semiconductor device measurement method for measuring electrical characteristics of a semiconductor device attached to a sheet.

Background of the invention

A semiconductor device is measured by using an annular frame that is larger than the size of a semiconductor wafer. An adhesive sheet having a circular shape larger than the inner circumference of the annular frame is fixed to the annular frame, and the semiconductor wafer is attached to the sheet. The semiconductor wafer attached to the wafer is divided into a plurality of semiconductor devices by a cutting device. A contact element of a semiconductor test device is an electrode electrically connected to the plurality of divided semiconductor devices, and electrical characteristics of the plurality of semiconductor devices are measured at one time. This semiconductor device measuring method is disclosed in Japanese Patent Laid-Open Publication No. 2007-178132.

The electrical characteristics of a semiconductor device are desirably measured in a high temperature measurement environment at a temperature higher than room temperature, for example, 125 ° C, depending on the environment in which the semiconductor device is used. In this case, for several semiconductor packages A high temperature measurement environment is employed by placing a sheet on which a plurality of semiconductor devices are attached, on a placement surface of a heating plate, and heating the sheet. If this is performed, however, the sheet is expanded and slackened by heat, and the position and attachment angle of the plurality of semiconductor devices attached to the sheet are changed. Therefore, the contact elements of the semiconductor test device are no longer able to contact the electrodes of the semiconductor devices, and it is no longer possible to simultaneously measure the electrical characteristics of the plurality of semiconductor devices. This causes the problem that the electrical characteristics of several semiconductor devices cannot be effectively measured in a high temperature measurement environment.

Summary of invention

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device measurement method capable of efficiently measuring electrical characteristics of a plurality of semiconductor devices in a high temperature measurement environment.

In order to achieve the above object, a semiconductor device measuring method of the present invention includes a sheet attaching step of attaching a sheet which is shrunk when being cooled after being heated to an annular frame, and a plurality of semiconductor devices therein a step of attaching aggregates formed in a matrix form to the surface of the sheet, a cutting step of cutting the plurality of semiconductor devices by cutting the aggregate attached to the surface of the sheet, The step of placing thereon a sheet on which the plurality of divided semiconductor devices are attached is placed on a placement surface of a heating device, and the heating device heats the plurality of divided semiconductor devices attached to the sheet a heating step of measuring electrical of the plurality of divided semiconductor devices when the plurality of divided semiconductor devices are heated A measuring step of the characteristic, and a preheating step of heating the sheet after the sheet attaching step and before the placing step and then cooling the sheet.

The sheet attached to the frame is heated and cooled after that, so the sheet expands without slack. Even when a high-temperature measurement environment is produced by placing the sheet on the placement surface of the heating device in this state and heating the sheet by the heating device, the expansion of the sheet due to heat can be inhibition. According to this, the positions and angles of the plurality of semiconductor devices attached to the sheet are not changed but are maintained. This makes it possible to efficiently measure the electrical characteristics of the plurality of semiconductor devices in a high temperature measurement environment.

1‧‧‧Semiconductor device measurement system

2‧‧‧Automatic sheet attachment device

3‧‧‧Sheet preheating device

4‧‧‧Automatic semiconductor strip attaching device

5‧‧‧ Cutting device

6‧‧‧Measurement device

7‧‧‧UV hardening device

8‧‧‧Classification device

10‧‧‧ Thin sheet body

11‧‧‧Sheet

11a‧‧‧PET substrate

11b‧‧‧Adhesive material

12‧‧‧ ring frame

12a‧‧‧round opening

13‧‧‧Semiconductor strip

14‧‧‧Semiconductor device

14c‧‧‧Semiconductor wafer

14m‧‧·Mold casting resin

14r‧‧‧ lead frame

17‧‧‧High temperature environment furnace

20‧‧‧Cutting knife

24‧‧‧Clamping table

24a‧‧ ‧ alcove

24b‧‧‧ side surface

24c‧‧‧ side surface

25‧‧‧Contactor

25a‧‧‧ Subject

26‧‧‧Probe

26a‧‧‧ front end

26b‧‧‧ Backend section

27‧‧‧Tester

27a‧‧‧Measurement unit

27b‧‧‧Diagnostic unit

27c‧‧‧Transmission unit

28‧‧‧Black light

30‧‧‧ push pin

31‧‧‧ receiving unit

32‧‧‧Classification unit

50‧‧‧ hot plate

51‧‧‧heater

52‧‧‧ pipe connection components

52a‧‧‧Tongkong

53‧‧‧Clamping elements

53a‧‧‧Place surface

54‧‧‧ pipe connection components

54a‧‧‧Tongkong

55‧‧‧vacuum path

56‧‧‧vacuum path

70‧‧‧ hot plate

71‧‧‧Clamping table

71a‧‧‧Place surface

71b, 71c‧‧‧ side surface

72‧‧‧ Groove

73,74‧‧‧ pipe connection components

73a, 74a‧‧‧through

75,76‧‧‧vacuum path

101‧‧‧Semiconductor device measurement system

102‧‧‧Semiconductor device measurement system

S1‧‧‧Automatic sheet attaching steps

S2‧‧‧Sheet preheating step

S3‧‧‧Automatic Semiconductor Strip Attachment Procedure

S4‧‧‧ cutting steps

S5‧‧‧Placement steps

S6‧‧‧heating step

S7‧‧‧Measurement steps

S8‧‧‧UV hardening step

S9‧‧‧ classification steps

1 is a block diagram showing an overall structure of a semiconductor device measuring system to be used in a semiconductor device measuring method according to a first embodiment of the present invention; FIG. 2 is a view for explaining the use of an automatic sheet Figure 3 is a view for explaining a preheating step of a sheet using a sheet preheating device; Fig. 4A is a view showing a semiconductor strip attached to a semiconductor strip 3B is a perspective view showing a portion S shown in FIG. 4A in an enlarged scale; FIG. 5A is a view for explaining a cutting step using a cutting device; 5B is a view showing a main portion of FIG. 5A in an enlarged scale; FIG. 6 is a cross-sectional view showing a state in which the semiconductor strip is cut by the cutting device; FIG. 7 is a display for measuring Figure 8 is a perspective view showing a hot plate of the measuring device; Figure 9 is a perspective view showing a state in which the sheet is placed on a hot plate of the measuring device; 1 is a cross-sectional view showing the structure of a hot plate of the measuring device; FIG. 11 is a perspective view for explaining a UV hardening step using a UV curing device; and FIG. 12 is a view showing the UV curing device irradiating the sheet with ultraviolet rays. Figure 13 is a view showing a configuration of a sorting device; Figure 14 is a flow chart showing the steps of a semiconductor device measuring method according to a first embodiment of the present invention; Figure 15 is a view A cross-sectional view showing a state of a semiconductor strip before and after being cut by the cutting device; FIG. 16 is a cross-sectional view showing a state in which a semiconductor device is pushed by a push pin; FIG. 17 is a view showing a state in which the present invention is to be used. Half of the second embodiment Block diagram showing the overall configuration of a semiconductor device using the measurement system of the measuring method of the amount of body apparatus; FIG. 18 is a semiconductor device according to an amount of a second embodiment of the present invention as a display FIG. 19 is a block diagram showing the overall structure of a semiconductor device measuring system to be used in the semiconductor device measuring method of the third embodiment of the present invention; FIG. 20 is a A flow chart showing the steps of a semiconductor device measuring method according to a third embodiment of the present invention; and FIG. 21 is a hot plate showing a measuring device according to a fourth embodiment of the present invention and a hot plate to be placed on the hot plate. A perspective view of a sheet; and Fig. 22 is a cross-sectional view showing the structure of a hot plate showing the measuring device of the fourth embodiment of the present invention.

Detailed description of the preferred embodiment <First Embodiment>

The first embodiment of the present invention will be described below in conjunction with the drawings.

<Overall structure of semiconductor device measurement system>

As shown in FIG. 1, a semiconductor device measuring system 1 includes an automatic sheet attaching device 2, a sheet preheating device 3, an automatic semiconductor strip attaching device 4, a cutting device 5, a measuring device 6, and a UV. The curing device 7 and the sorting device 8.

<Automatic sheet attachment device>

The automatic sheet attaching device 2 is a device for automatically attaching a sheet 11 to an annular frame 12. As shown in Fig. 2, the annular frame 12 is a thin plate having a circular annular shape in plan view - The frame has a circular opening 12a. The automatic sheet attaching device 2 cuts the sheet 11 having a circular shape in a plan view from a thin sheet body 10 wound into a roll shape, and sticks the edge of the adhesive material 11b (Fig. 6) of the sheet 11 Attached to the annular frame 12.

It is to be noted that the annular frame 12 does not have to be a circular ring, but can also be a rectangular ring or the like. If this is the case, the sheet 11 is cut into a shape corresponding to the shape of the annular frame 12, for example, a rectangular shape. Moreover, the automatic sheet attaching device 2 does not have to be used, and it is also possible to manually attach the sheet 11 to the ring frame 12 after performing simple positioning.

<Sheet>

The sheet 11 has a diameter slightly larger than the opening 12a of the annular frame 12. As shown in Fig. 6, the sheet 11 is a UV (ultraviolet light) obtained by stacking the UV-hardening adhesive 11b on a PET (polyethylene terephthalate) substrate 11a. Sheet. When the sheet 11 is irradiated with ultraviolet rays externally, the adhesive force of the adhesive material 11b is lowered.

The sheet 11 has an expansion/contraction characteristic such that the sheet 11 expands when heated to a temperature higher than room temperature (first temperature) (second temperature), for example, 100 ° C, and if it is after that When cooled to room temperature, the shrinkage is greater than before heating. This expansion/contraction characteristic of the sheet 11 can also be defined as a contraction coefficient at the time of cooling which is larger than a coefficient of expansion at the time of heating. It should be noted that "room temperature" is a temperature controlled by air conditioning and is about 20 ° C to 25 ° C.

The expansion/contraction properties described above are for crystalline plastics. Characteristics found. For example, it is also possible to use the sheet 11 including the substrate 11a formed of PBT (polybutylene terephthalate) as a crystalline plastic.

<Sheet preheating device>

As shown in FIG. 3, the sheet preheating device 3 includes a high temperature environment furnace 17 capable of generating a high temperature environment higher than room temperature, for example, 100 ° C or higher. In the high temperature environment generated by the high temperature environment furnace 17, the sheet 11 attached to the annular frame 12 is placed with the annular frame 12 and preheated. This process will be referred to as "preheating" after this.

<Automatic semiconductor strip attaching device>

The automatic semiconductor tape attaching device 4 is an adhesive material 11b for automatically attaching a semiconductor strip 13 (which will be described later) to the sheet 11 preheated by the sheet preheating device 3. The device on it. It is noted that the automatic semiconductor strip attaching device 4 does not have to be used, and it is also possible to manually attach the semiconductor strip 13 to the sheet 11 after performing simple positioning.

<semiconductor strip>

As shown in Figures 4A and 4B, the semiconductor strip 13 is an aggregate in which a plurality of semiconductor devices 14 are arranged and integrated in a matrix. The size of the semiconductor strip 13 is smaller than the opening 12a of the annular frame 12. Each of the semiconductor devices 14 forming the semiconductor strip 13 has a structure in which a semiconductor wafer 14c and a lead frame 14r electrically connected to the semiconductor wafer 14c are integrally sealed by a molding resin 14m. The lead frame 14r of each semiconductor device 14 is physically and electrically connected to the lead frame 14r of the adjacent semiconductor device 14 and sealed with a molding resin 14m.

<cutting device>

As shown in FIGS. 5A, 5B, and 6, the cutting device 5 is a device that holds the annular frame 12 integrated with the sheet 11 on which the semiconductor strip 13 is attached, and The semiconductor strip 13 is diced by a dicing blade 20, whereby the semiconductor strip 13 is divided into individual semiconductor devices 14.

<Measurement device>

The measuring device 6 is a device for simultaneously measuring the plurality of semiconductor devices 14. In this embodiment, the plurality of divided semiconductor devices 14 attached to the sheet 11 are measurement targets. The measuring device 6 generates a high temperature measuring environment at a temperature higher than room temperature (third temperature), for example, 125 ° C, according to the actual use environment of the semiconductor devices 14, and in the high temperature measuring environment. Perform measurement. In this case, the lower limit of the high temperature measurement environment is room temperature, and the upper limit is 125 °C.

As shown in FIG. 7, the measuring device 6 includes a hot plate 50 as a heating device for heating the plurality of semiconductor devices 14, a contactor 25 including a plurality of probes 26, and a connection to The plurality of probes 26 and a tester 27 that measures the electrical characteristics of the semiconductor devices 14.

As shown in Figs. 8 to 10, the hot plate 50 includes a heater 51, and a holding table 24 fixed to the heater 51. The holding table 24 is made of metal and has an almost rectangular shape in plan view. An alcove 24a (Fig. 10) having an almost rectangular shape in plan view is formed on the upper surface of the holding table 24. A plate-shaped holding member 53 having an almost rectangular shape in plan view is fitted to the holding table 24 Inside the recess 24a. The holding member 53 is made of a porous material (ceramic) containing a large amount of air gaps and holes. The clamping member 53 has a non-rough flat placement surface 53a capable of holding the sheet 11.

Two vacuum paths 55 each having an L shape in a side view and two vacuum paths 56 are formed inside the holding table 24. The end of each of the vacuum paths 55 and 56 is an alcove 24a leading to the clamping table 24, and the other end of the vacuum paths 55 and 56 is a side surface leading to the clamping table 24. 24b and 24c. Two tube connection elements 52 and two tube connection elements 54 are side surfaces 24b and 24c that are connected to the clamping table 24. The through holes 52a and 54a are formed in the tube connecting members 52 and 54. The through holes 52a and 54a of the tube connecting members 52 and 54 are vacuum paths 55 and 56 connected to the holding table 24. A vacuum pump (not shown) is connected to the tube connecting members 52 and 55.

The hot plate 50 is mounted on an XY stage capable of moving in an arrow AB direction (width direction), an arrow CD direction (depth direction) perpendicular to the arrow AB direction, and an arrow EF direction (height direction) ( Not shown in the figure).

The contactor 25 is opposite the clamping element 53 of the clamping table 24. The contactor 25 includes a body 25a having an almost parallelepiped shape, and a plurality of probes 26 fixed to the body 25a. The probes 26 are contact elements that are to be electrically connected to the leadframe 14r of the semi-conductive pedestal 14. The probes 26 extend through the body 25a. The front end portion 26a of each probe 26 projects downward from the lower end of the main body 25a in the direction of the arrow F. The rear end portion 26b of each probe 26 projects upward from the upper end of the main body 25a in the direction of the arrow E, and is connected to the tester 27. The plurality of probes 26 are thus matched So that it is opposite to the plurality of lead frames 14r of one semiconductor device 14.

The tester 27 includes a measuring unit 27a for measuring the conduction state of the semiconductor device 14 when the front end portion 26a of the probe 26 is electrically connected to the lead frame 14r of the semiconductor device 14, a diagnostic unit 27b for diagnosing the electrical characteristics of the semiconductor device 14 based on the measurement result obtained by the measuring unit 27a, and a transmission unit for transmitting the diagnosis result obtained by the diagnostic unit 27b to the classification device 8 27c.

<UV hardening device>

The UV curing device 7 is a device for irradiating the sheet 11 from the side surface of the substrate 11a of the sheet 11 with ultraviolet rays. That is, the sheet 11 is irradiated with a surface on which the ultraviolet ray is not attached to the semiconductor device 14. As shown in Figs. 11 and 12, the UV hardening device 7 includes a plurality of black lamps 28 arranged in parallel on the side of the substrate 11a of the sheet 11 attached to the annular frame 12.

<Classification device>

The sorting device 8 classifies each of the plurality of semiconductor devices 14 as non-defectively based on a diagnosis result of electrical characteristics of the plurality of semiconductor devices 14 acting by the tester 27 of the measuring device 6. A product or defective product, a device that removes the semiconductor device 14 classified as a non-defective product from the sheet 11 and picks up the removed semiconductor device 14 with a picker.

As shown in FIG. 13, the sorting device 8 includes a receiving unit 31 for receiving a diagnosis result of the semiconductor device 14 obtained by the tester 27 of the measuring device 6, and a method for a sorting unit 32, such as a semiconductor device 14 classified into a non-defective product and a defective product, and a A push pin 30 for pushing up only the semiconductor device 14 classified as a non-defective product by the sorting unit 32 from below the sheet 11.

<Measurement operation of semiconductor device measurement system>

The operation of the electrical characteristics of a measuring semiconductor device 14 functioning by the semiconductor device measuring system 1 having the above-described configuration will be described with reference to FIG.

[Automatic sheet attaching step S1]

As shown in FIG. 2, the automatic sheet attaching device 2 cuts a circular sheet 11 larger than the opening 12a of the annular frame 12 from the sheet body 10, and attaches the outer periphery of the sheet 11 thereto. On the annular frame 12. The annular frame 12 to which the sheet 11 is attached is transported from the automatic sheet attaching device 2 to the sheet preheating device 3.

[Sheet preheating step S2]

The sheet preheating device 3 accommodates the sheet 11 attached to the annular frame 12 in the high temperature environment furnace 17, and heats the sheet 11 for 2 minutes (preheating time) in a high temperature environment at 100 ° C or longer. After that, the sheet preheating device 3 unloads the sheet 11 from the high temperature environment furnace 17, and naturally cools the sheet 11 in a room temperature environment.

In this process, the sheet 11 is expanded in the high temperature environment furnace 17 in a high temperature environment, and thereafter shrinks in a room temperature environment. Since the contraction coefficient of the sheet 11 is a characteristic larger than the expansion coefficient, the tension is given to the sheet 11 attached to the annular frame 12, and this can be removed when the sheet 11 is attached to the annular frame 12 The resulting slack and wrinkles. This is the preheating and cooling of the sheet 11 through the action of the sheet preheating device 3. But the state that is obtained.

In order to obtain the sheet 11 which does not have the above-described slack and wrinkles, it is only necessary to set the lower limit temperature of the high temperature environment furnace 17 at 90 ° C as the glass transition temperature Tg of the PET forming the sheet 11, and to apply the high temperature environment furnace The upper limit temperature of 17 is set at 260 ° C as the melting point Tm of PET (this melting point is not the temperature at which the material melts but the melting point of the polymer). The preheating time of the sheet 11 is set to 2 minutes or more because even when a high temperature environment at 100 ° C is set in the high temperature environment furnace 17, if the preheating time is less than 2 minutes, the sheet 11 The preheat/cooling effect cannot be obtained.

[Automatic Semiconductor Strip Attachment Step S3]

Then, the automatic semiconductor tape attaching device 4 attaches the semiconductor strip 13 to the surface of the adhesive material 11b coated with the preheating and cooling to remove the slack and wrinkle sheet 11. . After that, the sheet 11 on which the semiconductor strip 13 is attached is transferred to the cutting device 5 together with the annular frame 12.

[Cutting Step S4]

The cutting device 5, by means of the annular frame 12, holds the sheet 11 transferred from the automatic semiconductor tape attaching device 4, and cuts the semiconductor strip 13 attached to the sheet 11 by a cutting blade 20, whereby the cutting device 5 The semiconductor strip 13 is divided into individual semiconductor devices 14. In this step, as shown in Fig. 15, the cutter 20 cuts the adhesive material 11b on which the sheet 11 of the semiconductor strip 13 is attached, but does not cut the substrate 11a of the sheet 11. The cutting device 5 thus performs a half cut.

Adjacent semi-conductors in the semiconductor strip 13 as previously described The lead frame 14r of the body device 14 is physically and electrically connected. When the individual semiconductor devices 14 of the semiconductor strip 13 are separated, this electrical connection between adjacent semiconductor devices 14 disappears. Accordingly, the measuring device 6 is capable of independently measuring the electrical characteristics of the plurality of semiconductor devices 14 forming the semiconductor strip 13.

[Placement step S5]

All of the plurality of semiconductor devices 14 divided by the cutting device 5 are still attached to the sheet 11 by the adhesive material 11b (Fig. 7). The measuring device 6 places the sheet 11 on which the plurality of divided semiconductor devices 14 are attached, on the placement surface 53a of the holding member 53 of the hot plate 50. Then, the sheet 11 is held by the tube connecting portions 52 and 54 of the hot plate 50 and the vacuum paths 55 and 56 of the holding table 24 by vacuum pumping the sheet 11 at the holding member 53. The surface 53a is placed. In this state, at least the portion of the sheet 11 on which the plurality of semiconductor devices 14 are attached must be clamped to the placement surface 53a.

[Heating step S6]

Subsequently, the measuring device 6 heats the holding table 24 with the heater 51 under it, thereby separating the plurality of sheets attached to the sheet 11 held by the placing surface 53a of the holding member 53. The semiconductor device 14 is set in a high temperature measurement environment at 125 °C.

In a immersion time before the high temperature measurement environment is heated by the heater 51, the position adjustment is performed such that the lead frame 14r of one of the plurality of semiconductor devices 14 is opposite to the contactor 25 probes 26. More specifically, a camera individually captures the semiconductor package The image of the lead frame 14r of 14 and the image of the probe 26 of the contactor 25 are placed, and the X-Y stage moves the hot plate 50 according to their captured images such that the lead frames 14r are relative to the probes 26.

The sheet 11 placed on the placement surface 53a of the holding member 53 is expanded by heating without slack. Even in a high temperature measurement environment, the sheet 11 is difficult to expand and free from slack or wrinkles. Therefore, the positions and angles of the plurality of semiconductor devices 14 attached to the sheet 11 with respect to the probes 26 are maintained and the positions and angles before being heated by the heater 51 are unchanged. Accordingly, the positional relationship between the plurality of lead frames 14r of the semiconductor devices 14 and the plurality of probes 26 of the contactor 25 is maintained without being changed by heating with the heater 51, but is maintained . It is also possible to prevent the inconvenience that the sheet 11 is not easily caught by the placing surface 53a of the holding member 53 due to the slack and wrinkles of the sheet 11.

[Measurement step S7]

In the high-temperature measurement environment in which the plurality of semiconductor devices 14 are heated, the main body 25a of the contactor 25 moves downward in the direction of the arrow F, so that the front end portion 26a of the probes 26 becomes The plurality of lead frames 14r of the semiconductor device 14 are in contact. The measuring unit 27a of the tester 27 measures the conduction states of the plurality of lead frames 14r of the semiconductor devices 14 via the plurality of probes 26. Based on the measurement results, the diagnostic unit 27b of the tester 27 diagnoses the electrical characteristics of each semiconductor device 14. The transmission unit 27c of the tester 27 transmits the diagnosis result (non-defective product or defective product) to the sorting device 8.

When the tester 27 is completely diagnosed in the high temperature measurement environment When the electrical characteristics of all of the plurality of divided semiconductor devices 14 attached to the sheet 11 are attached, the sheet 11 on which the plurality of semiconductor devices 14 are attached is transferred to the UV curing device 7.

[UV hardening step S8]

The plurality of black lamps 28 of the UV curing device 7 emit ultraviolet rays from the side of the substrate 11a of the sheet 11. Therefore, the adhesive force of the adhesive material 11b of the sheet 11 is lowered, which makes it difficult to remove the plurality of semiconductor devices 14 from the sheet 11. In this state, the sheet 11 is conveyed to the sorting device 8.

[Classification Step S9]

The receiving unit 31 of the sorting device 8 receives the diagnostic result of each of the semiconductor devices 14 transmitted from the tester 27 of the measuring device 6. The classifying unit 32 of the sorting device 8 classifies each of the plurality of semiconductor devices 14 into a non-defective product or a defective product according to the diagnosis result, and controls the push pin 30 to classify the product as a non-defective product. The semiconductor device 14 is pushed up. As shown in Fig. 16, the semiconductor device 14 classified as a non-defective product is pushed up from the lower end of the sheet 11 by the front end portion 30a of the push pin 30. Therefore, the semiconductor device 14 is removed from the adhesive material 11b of the sheet 11, and is picked up by the pickup (not shown).

Note that the semi-mystery device 14 classified as a defective product is not pushed up from the lower end portion 30a of the push pin 30 from below the sheet 11, but is kept attached to the sheet 11 and finally discarded.

<effect>

The slack and rise of the sheet 11 attached to the annular frame 12 Wrinkles are removed by preheating and cooling. In this state, the sheet 11 is placed on the placement surface 53a of the hot plate 50 of the measuring device 6. Even when heated by the heater 51 to 125 ° C, the sheet 11 is difficult to expand and relax or wrinkle. Accordingly, after the positional relationship between the plurality of probes 26 of the contactor 25 and the plurality of lead frames 14r of the semiconductor devices 14 are adjusted, the positional relationship between them is not caused by the heater. 51 is changed by heating.

In this embodiment, the hot plate 50 includes the clamping element 53. As described above, the holding member 53 securely holds the sheet 11 on the placement surface 53a because the sheet 11 which has undergone preheating and cooling does not slack or wrinkle. Even when heated by the heater 51, the sheet 11 is neither slack nor wrinkled and is held by the holding member 53 on the placement surface 53a. The plurality of probes 26 at the contactor 25 and the plurality of lead frames 14r of the semiconductor devices 14 are held on the placement surface 53a before and after being heated by the heater 51. The positional relationship between them is maintained more stably.

Accordingly, the front end portion 26 of the plurality of probes 26 of the contactor 25 reliably becomes in contact with the plurality of lead frames 14r of the semiconductor device 14, and the electrical characteristics of the semiconductor device 14 are measured. Therefore, the electrical characteristics of the plurality of semiconductor devices 14 attached to the sheet 11 are sequentially measured. In this embodiment, therefore, the electrical characteristics of the plurality of semiconductor devices 14 can be effectively measured immediately even in a high temperature measurement environment.

It is noted that a conventional measuring device includes a large preheating structure that can measure semiconductor devices at high temperatures. In the measuring device 6, however, The preheating can be performed by the heater 51 mounted under the holding table 24 of the hot plate 50. Since this avoids the need for a large preheating structure in conventional devices, it is possible to simplify the structure of the device and to reduce the size and weight of the device.

<Second embodiment>

Next, a second embodiment of the present invention will be explained. As shown in FIG. 17, a semiconductor device measuring system 101 includes an automatic sheet attaching device 2, an automatic semiconductor strip attaching device 4, a cutting device 5, a sheet preheating device 3, a measuring device 6, and UV hardening. Device 7, and sorting device 8. The constituent elements of the semiconductor device measuring system 101 are the same as those of the semiconductor device measuring system 1 of the first embodiment, but the layout of the former is different from the layout of the latter. That is, the difference between this embodiment and the first embodiment is the order of the process steps.

More specifically, in the semiconductor device measuring system 101, the sheet preheating device 3 is disposed after the cutting device 5 and before the measuring device 6. That is, as shown in Fig. 18, the sheet preheating step S2 by the sheet preheating device 3 is after the cutting step S4 by the cutting device 5, and is operated by the measuring device 6. The placement step S5 is performed before.

Even after the cutting device 5 divides a semiconductor strip 13 into a plurality of semiconductor devices 14, the sheet preheating device 3 can attach the slack and wrinkles from a sheet by applying tension to the sheet 11 The sheets 11 of the separate semiconductor device 14 are removed, if the timing is before the measuring device 6 adjusts the positions of the plurality of semiconductor devices 14 and the probe 26 of a contactor 25. if. As in the first embodiment, therefore, even in a high temperature measurement environment, the measuring device 6 can effectively measure the electrical characteristics of the plurality of semiconductor devices 14 at once.

<Third embodiment>

A third embodiment of the present invention will be described below. As shown in FIG. 19, a semiconductor device measuring system 102 includes an automatic sheet attaching device 2, an automatic semiconductor strip attaching device 4, a sheet preheating device 3, a cutting device 5, a measuring device 6, and UV hardening. Device 7, and sorting device 8. The constituent elements of the semiconductor device measuring system 102 are the same as those of the semiconductor device measuring system 1 of the first embodiment, but the layout of the former is different from the layout of the latter. That is, the difference between this embodiment and the first embodiment is the order of the process steps.

More specifically, in the semiconductor device measuring system 102, the sheet preheating device 3 is disposed before the automatic semiconductor strip attaching device 4 and before the cutting device 5. That is, as shown in Fig. 20, the sheet preheating step S2 by the sheet preheating device 3 is after the automatic semiconductor strip attaching step S3 by the automatic semiconductor strip attaching device 4 The cutting step S4, which is acted upon by the cutting device 5, is executed before.

The sheet preheating device 3 can impart tension to the sheet 11 even after the semiconductor strip 13 is attached to a sheet 11 and before the cutting device 5 divides the semiconductor strip 13 into a plurality of semiconductor devices 14. To remove slack and wrinkles from a sheet 11 to which the semiconductor strip 13 is attached, if the timing is to adjust the probes of the plurality of semiconductor devices 14 and a contactor 25 at the measuring device 6. 26 positions before the words. As in the first In the embodiment, therefore, even in a high temperature measurement environment, the measuring device 6 can effectively measure the electrical characteristics of the plurality of semiconductor devices 14 at once.

<Fourth embodiment>

A fourth embodiment of the present invention will be described below. In the fourth embodiment, a hot plate 70 shown in Fig. 21 replaces the hot plate 50 of the measuring device 6 of each of the first to third embodiments. Accordingly, an automatic sheet attaching device 2, a sheet preheating device 3, an automatic semiconductor strip attaching device 4, a cutting device 5, a measuring device 6, a UV hardening device 7, and a sorting device 8 are provided, except for the hot plate 70. It is the same as the constituent elements of the semiconductor device measuring systems 1, 101, and 102 of the first, second, and third embodiments.

As shown in Figs. 21 and 22, the hot plate 70 includes a heater 51 like the hot plate 50. A holding table 71 having a rectangular shape in plan view is fixed to the heater 51. A plurality of grooves 72 connected to each other are formed on the placement surface 71a of the holding table 71. The holding table 71 is made of aluminum. Therefore, the temperature of the holding table 71 when it is heated by the heater 51 is uniform. It is to be noted that the holding table 71 does not have to be made of aluminum or may be formed of other metal materials having high thermal conductivity.

Two vacuum paths 75 each having an L shape and two vacuum paths 76 in the side view are formed inside the holding table 71. One end of each of the vacuum paths 75 and 76 is in communication with one of the plurality of grooves 72, and the other ends of the vacuum paths 75 and 76 are side surfaces 71b leading to the clamping table 71. And 71c. Two tube connecting members 73 and two tube connecting members 74 are fixed to the side surfaces 71b and 71c of the holding table 71. Through holes 73a and 74a are formed in the pipe connecting members 73 and 74. Through holes 73a of the pipe connecting members 73 and 74 And 74a are vacuum paths 75 and 76 that are connected to the holding stage 71. A vacuum pump (not shown) is connected to the tube connecting members 73 and 74.

A sheet 11 placed on the placement surface 71a of the holding table 71 is sucked by the vacuum pump through the plurality of grooves 72 exposed to the placement surface 71a, and is clamped on the placement surface 71a. .

A contactor 25 for detecting the electrical state of a plurality of semiconductor devices 14 as shown in FIG. 7 is disposed above the clamping table 71, and a tester 27 is connected to the contactor 25.

As in the first embodiment, even when heated by the heater 51 to 125 ° C, the sheet 11 which has undergone preheating and cooling is difficult to expand, and there is no slack or wrinkle. Even in a high temperature measurement environment, the sheet 11 is held on the placement surface 71a of the holding table 71. This prevents the collision of the probe 26 of the contactor 25 when it comes into contact with the lead frame 14r of the semiconductor device 14 attached to the sheet 11 to change the position of the semiconductor device 14 and the sheet 11, and is attached thereto. The inconvenience of the other semiconductor device 14 on the sheet 11 can no longer be measured.

<Other Embodiments>

In each of the first to fourth embodiments, the semiconductor device 14 obtained by cutting the semiconductor strip 13 is an example of a target for high temperature measurement. However, a semiconductor wafer obtained by cutting a semiconductor wafer can also be a target for high temperature measurement like a semiconductor device.

In each of the first to fourth embodiments, the sheet 11 is attached to the annular frame 12 and then the semiconductor strip 13 is attached thereto. An example on the sheet 11 has been described. Then, it is also possible to attach the semiconductor strip 13 to the 7 sheet 11, and then attach the sheet 11 to the annular frame 12. In this case, the automatic semiconductor strip attaching step S3 is performed first, and then the automatic sheet attaching step S1 is performed.

In each of the first to fourth embodiments, the electrical characteristics of the semiconductor device 14 attached to the sheet 11 are such that the sheet 11 is clamped to the placement surface 53a of the holding member 53 or An example in which the placement surface 71a of the holding table 71 is measured is described. However, the use of the preheating sheet 11 is such that the plurality of probes 26 of the contactor 25 and the plurality of semiconductor devices 14 are suppressed without holding the sheet 11 under the placement surface 53a or 71a. It is possible that the positional relationship between the lead frames 14r is not changed by heating by the heater 51.

In each of the first to fourth embodiments, the high temperature measurement environment at a maximum of 125 ° C is generated by the hot plate 50 or 70 and the electrical characteristics of the semiconductor device 14 are in this high temperature measurement environment. Measurement examples have been described. However, the temperature of the high temperature measuring environment is not limited to 125 ° C but may be 85 ° C to 150 ° C.

In each of the first to fourth embodiments, the preheating is performed by heating in a high temperature environment at a temperature higher than room temperature (second temperature), for example, 100 or higher. The sheet 11 is executed for a predetermined warm-up time (for example, 2 minutes or more). In this step, the baking for removing the residual moisture from the semiconductor device 14 can be performed by setting the warm-up time to a sufficiently long time. Conventional flakes are not resistant to this high temperature environment of baking. Therefore, baking cannot be attached to the thin by attaching a plurality of semiconductor devices The film is executed. In contrast, the sheet 11 made of PET is resistant to prolonged heating. Accordingly, a plurality of semiconductor devices 14 can be efficiently baked by attaching them to the PET sheet 11. Furthermore, since the semiconductor devices 14 are baked by using preheating, it is not necessary to perform any baking step independently. Note that the warm-up time when baking is performed is set to a time during which the residual moisture of the semiconductor device 14 is removed, for example, 8 hours.

In each of the first to fourth embodiments, the black lamp 28 has been described using the example of the UV hardening device 7. However, it is also possible to replace the black lamp 28 with a metal halide lamp, a mercury lamp, or the like.

In each of the first to fourth embodiments, an example in which the sorting means 8 classifies the semiconductor devices 14 after UV hardening by the action of the UV hardening means 7 has been described. However, it is also possible to perform UV hardening by the UV curing device 7 after the classification of the semiconductor devices 14 by the classification device 8, and then unload the semiconductor devices 14.

1‧‧‧Semiconductor device measurement system

2‧‧‧Automatic sheet attachment device

3‧‧‧Sheet preheating device

4‧‧‧Automatic semiconductor tape attachment device

5‧‧‧ Cutting device

6‧‧‧Measurement device

7‧‧‧UV hardening device

8‧‧‧Classification device

Claims (5)

A semiconductor device measuring method comprising the steps of: a sheet attaching step of shrinking a sheet when attached to an annular frame when heated after being heated; an aggregate attaching step, The aggregate attaching step attaches an aggregate to the surface of the sheet, a plurality of semiconductor devices are formed in the matrix in a matrix form; and a cutting step by which the cutting step is to be attached Forming the aggregate on the surface to separate the plurality of semiconductor devices; a placing step of placing the sheet on which the plurality of separate semiconductor devices are attached on a placement surface of the heating device; a heating step of heating the plurality of separate semiconductor devices attached to the sheet by the heating device; a measuring step of heating the plurality of separate semiconductor devices Measuring the electrical characteristics of the plurality of separate semiconductor devices; and a preheating step of heating the sheet and then cooling after the sheet attaching step and before the placing step Flakes. The method of claim 1, wherein the placing step comprises a step of clamping the sheet on the placement surface. The method of claim 1, wherein the preheating step comprises heating and cooling the thin film after the sheet attaching step and before the aggregate attaching step One step of the film. The method of claim 1, wherein the preheating step comprises a step of heating and cooling the sheet after the cutting step and before the placing step. The method of claim 1, wherein the preheating step comprises a step of heating and cooling the sheet after the aggregate attaching step and before the cutting step.