TWI570285B - Deposition systems having reaction chambers configured for in-situ metrology and related methods - Google Patents

Description

Deposition system and related method having a reaction chamber configured to be in situ quantifiable [Reciprocal Reference of Related Applications]

The subject matter of this application is related to the subject matter of the following application: US Provisional Patent Application No. 61/526,137, filed on August 22, 2011 in the name of Bertram et al., entitled "In and out of the gate at the desired location" DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIRABLE LOCATIONS, AND RELATED METHODS), US Provisional Patent Application No. 61/526,143, filed on August 22, 2011 in the name of Bertram et al. "DEPOSITION SYSTEMS INCLUDING A PRECURSOR GAS FURNACE WITHIN A REACTION CHAMBER, AND RELATED METHODS", and the United States of America, August 22, 2011, in the name of Bertram et al. Provisional Patent Application No. 61/526,148, entitled "DIRECT LIQUID INJECTION FOR HALIDE VAPOR PHASE EPITAXY SYSTEMS AND METHODS", complete in each application The disclosure is hereby incorporated by reference.

In general, embodiments of the present invention relate to systems for depositing materials on substrates and methods of making and using such systems. More specifically, embodiments of the present invention relate to vapor phase epitaxy (VPE) and chemical vapor deposition (CVD) systems for depositing III-V semiconductor materials on substrates and methods of making and using such systems.

Chemical vapor deposition (CVD) is a chemical process for depositing solid materials on a substrate and is commonly used in the fabrication of semiconductor devices. In the chemical vapor deposition process, a substrate is exposed When exposed to one or more reagent gases, the reagent gases react, decompose, or both react and decompose, thereby depositing a solid material on the surface of the substrate.

In the art to which the present invention pertains, there is a particular type of CVD process known as vapor phase epitaxy (VPE). In a vapor phase epitaxial process, a substrate is exposed to one or more reagent vapors in a reaction chamber, and the reagent gases are reacted, decomposed, or both reacted and decomposed to thereby cause a solid material to be epitaxially grown. Deposited on the surface of the substrate. Vapor phase epitaxy processes are often used to deposit III-V semiconductor materials. In a vapor phase epitaxy process, when one of the reagent vapors contains a hydride vapor, the process can be referred to as a hydride vapor phase epitaxy (HVPE) process.

A hydride vapor phase epitaxy (HVPE) process is used to form III-V semiconductor materials such as gallium nitride (GaN). In these processes, the GaN epitaxial growth on the substrate is caused by a gas phase reaction between gallium chloride (GaCl) and ammonia (NH3), which is heated to a temperature of about 500 ° C. And in a reaction chamber between about 1,100 ° C. NH3 can be supplied from a standard source of ammonia.

In some methods, GaCl vapor is supplied by passing hydrogen chloride (HCl) gas (available from a standard HCl gas source) over heated liquid gallium to form GaCl in situ within the reaction chamber. The liquid gallium can be heated to a temperature between about 750 ° C and about 850 ° C. GaCl and NH3 can be directed to the surface of a heated substrate (such as a wafer of semiconductor material), such as above it. A gas injection system for use in such systems and methods is disclosed in U.S. Patent No. 6,179,913, issued toS.

In such systems, to supplement the source of liquid gallium, the reaction chamber may have to be opened to contact the surrounding environment. In addition, in such systems, the reaction chamber may not be cleaned in place.

In order to solve such problems, a method and system using an external source of the precursor GaCl3 have been developed to directly inject GaCl3 into the reaction chamber. Examples of such methods and systems are disclosed, for example, in U.S. Patent Application Publication No. US 2009/0223442 A1, the entire disclosure of which is hereby incorporated by reference in its entirety in Instructions.

The Summary is intended to introduce a selection of concepts in the form of a summary, which are further described below in some exemplary embodiments of the invention. This summary is not intended to identify key features or essential features of the claimed subject matter, and is not intended to limit the scope of the claimed subject matter.

In some embodiments, the invention comprises a deposition system. The deposition systems comprise a reaction chamber having one or more chamber walls. At least one of the heat radiating emitters is configured to emit heat radiation through at least one of the one or more chamber walls and into the interior of the reaction chamber. The wavelength of the thermal radiation may be within a wavelength range of at least one of an infrared region and a visible region of the electromagnetic radiation spectrum. The at least one cavity wall through which the thermal radiation penetrates comprises a transparent material that is at least substantially transparent to electromagnetic radiation in the wavelength range. The deposition system further includes at least one metering device including a sensor. The sensor is located outside of the reaction chamber and is oriented and assembled to receive an electromagnetic radiation signal transmitted from the interior of the reaction chamber to the outside of the reaction chamber. The electromagnetic radiation signal can comprise one or more wavelengths in the range of wavelengths emitted by the thermal radiation. At least one volume of the opaque material is positioned to prevent at least some of the thermal radiation emitted by the at least one thermal radiation emitter from being detected by the sensor of the at least one metering device. The opaque material is opaque to the wavelength of the electromagnetic radiation in the wavelength range emitted by the thermal radiation.

In other embodiments, the invention encompasses methods of forming a deposition system. At least one thermal radiation emitter can be disposed outside of the reaction chamber containing one or more of the chamber walls and adjacent to the reaction chamber. The at least one thermal radiation emitter can be oriented to emit thermal radiation through at least one of the one or more chamber walls and into the interior of the reaction chamber. The at least one thermal radiation emitter can include an emitter that is configured to form thermal radiation in a range of electromagnetic radiation wavelengths that emit at least one of an infrared region and a visible region of the electromagnetic radiation spectrum. The at least one cavity wall through which the emitted thermal radiation passes may be selected to comprise a transparent material that is at least substantially transparent to electromagnetic radiation in the wavelength range emitted by the thermal radiation. A sensor of at least one metering device can be disposed outside of the reaction chamber and adjacent to the reaction chamber. The sensor can be oriented to receive an electromagnetic radiation signal transmitted from inside the reaction chamber to outside the reaction chamber. The sensor can be selected to include a sensor that is configured to detect electromagnetic radiation signals of one or more wavelengths of the thermal radiation emitted by the one or more thermal radiation emitters in the wavelength range. At least one volume of opaque material is provided at a location to prevent at least some of the thermal radiation emitted by the at least one thermal radiation emitter from being detected by the sensor of the at least one metering device. The opaque material can be selected so that It comprises a material that is opaque to the wavelength of the electromagnetic radiation in the wavelength range emitted by the thermal radiation.

In still further embodiments, the invention includes a method of depositing material onto a workpiece substrate using a deposition system. At least one workpiece substrate can be placed inside a reaction chamber. Thermal radiation may be emitted from at least one thermal radiation emitter located outside of the reaction chamber, passing through at least a portion of one or more of the chamber walls of the reaction chamber into the interior of the reaction chamber. The one or more chamber walls through which the thermal radiation passes may comprise a transparent material that is transparent to the thermal radiation. At least one process gas can be introduced into the reaction chamber. At least one of the workpiece substrate and the at least one process gas may be heated by the heat radiation. Material can be deposited from the at least one process gas onto the at least one workpiece substrate. A sensor of at least one metering device can be used to sense an electromagnetic radiation signal representative of at least one characteristic of the workpiece substrate. The sensor can be external to the reaction chamber and adjacent to the reaction chamber. The electromagnetic radiation signal detected by the sensor can pass from the interior of the reaction chamber through one or more chamber walls of the reaction chamber, which is transparent to the electromagnetic radiation signal and transmitted to the sensor. The sensor is shielded from at least some volume of opaque material from at least some of the thermal radiation emitted by the thermal radiation emitter.

The descriptions of the present specification are not intended to be an actual description of any particular system, component or device, but are merely intended to describe an idealized representation of an embodiment of the invention.

In the present specification, "III-V semiconductor material" means and includes at least one or more elements of Group IIIA (boron, aluminum, gallium, indium, titanium) and one or more VA elements (nitrogen). Any semiconductor material of phosphorus, arsenic, antimony or antimony. For example, III-V semiconductor materials include, but are not limited to, gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), indium nitride (InN), indium phosphide (InP). InGaAs, InAs, AlN, AlP, AlAs, InGaN, InGaP, Indium Bicarbonate (InGaNP) and so on.

In this specification, the term "gas" includes gas (a fluid that does not have a separate shape or volume) and steam (a gas in which a liquid or solid substance is dispersed), and the words "gas" and "steam" are used in this specification. Use as a synonym.

1 presents an example of a deposition system 100 consistent with the present invention. The deposition system 100 includes at least one substantially closed reaction chamber 102, at least one thermal radiation emitter 104, and a metering device 106, and a volume of opaque material (not shown in Figure 1), the opaque material being configured and arranged to shield one of the metering devices 106 from the sensor 108 from at least some of the heat radiation emitters 104 Radiation effects. The components of the deposition system 100 will be detailed below. In some embodiments, the deposition system 100 can include a CVD system, and can also include a VPE deposition system (eg, an HVPE deposition system).

The reaction chamber 102 can include one or more chamber walls. For example, the chamber walls can include a horizontally oriented top wall 124, a horizontally oriented bottom wall 126, and one or more side walls 128 that are vertically oriented between the top wall 124 and the bottom wall 126.

The deposition system 100 can further include a gas injection device 130 for injecting one or more process gases into the reaction chamber 102, and an exhaust and loading subassembly 132 for discharging process gases from the reaction chamber. 102 loads the substrate into the reaction chamber 102 and unloads the substrate from the reaction chamber 102. The gas injection device 130 can be configured to inject one or more process gases through one or more sidewalls 128 of the reaction chamber 102.

In some embodiments, the reaction chamber 102 can have the geometry of an elongated rectangular prism, as shown in FIG. In some such embodiments, the gas injection device 132 can be located at a first end of the reaction chamber 102 and the exhaust and loading subassembly can be located at an opposite second end of the reaction chamber 102. In other embodiments, the reaction chamber 102 can have other geometries.

The deposition system 100 includes a substrate support structure 134 (eg, a pedestal) that is configured to support one or more workpiece substrates 136 to deposit or otherwise provide semiconductor material within the deposition system 100. Some of the workpiece substrates 136. For example, the one or more workpiece substrates 136 can comprise dies or wafers. As shown in FIG. 1, the substrate support structure 134 can be coupled to a spindle 139 that can be coupled (eg, structurally coupled directly, magnetically coupled, etc.) to a drive such as an electric motor (figure The drive unit is configured to drive rotation of the spindle 139 to rotate the substrate support structure 134 within the reaction chamber 102.

The deposition system 100 further includes a gas flow system for flowing process gas through the reaction chamber 102. For example, the deposition system 100 can include at least one gas injection device 130 that injects one or more process gases into the reaction chamber 102 at a first location 103A, and a vacuum device 133 that processes the one or more process gases From the first location 103A, the reaction chamber 102 is drawn to a second location 103B, and the one or more process gases are evacuated from the reaction chamber 102 at the second location 103B. The gas injection device 130 can include, for example, a connector One of the gas injection manifolds is configured to couple with a conduit carrying one or more process gases from a process gas source.

With continued reference to FIG. 1, the deposition system 100 can include five gas inflow conduits 140A-140E that carry gas from the respective process gas sources 142A-142E to the gas injection device 130. As an option, gas flows (141A-141E) can be used to selectively control the flow of gas through the gas inflow conduits 140A-140E, respectively.

In some embodiments, the plurality of gas sources 142A ~ 142E may comprise at least one among GaCl _3, InCl ₃ or AlCl ₃ among the at least one of the external source, as described in U.S. Patent Application Publication No. 2009/0223442 A1 said. GaCl ₃ , InCl ₃ , and AlCl ₃ may exist in the form of a dimer such as Ga ₂ Cl ₆ , In ₂ Cl ₆ , and Al ₂ Cl ₆ . Therefore, at least one of the gas sources 142A-142E may comprise a dimer such as Ga ₂ Cl ₆ , In ₂ Cl ₆ or Al ₂ Cl ₆ .

In an embodiment, if one or more of the gas sources 142A-142E are of GaCl ₃ source or include a GaCl ₃ source, the GaCl ₃ source may comprise a temperature maintained at a temperature of at least 100 ° C (eg, about 130 ° C). One of the liquid GaCl ₃ reservoirs, and the GaCl ₃ source may comprise a physical means for increasing the evaporation rate of the liquid GaCl ₃ . Such physical means may include, for example, a device configured to agitate the liquid GaCl ₃ , a device configured to spray the liquid GaCl ₃ , and configured to rapidly flow the carrier gas over the liquid GaCl ₃ . A device, a device configured to foam a carrier gas through the liquid GaCl ₃ , and a device configured to superimpose the liquid GaCl ₃ in an ultrasonic manner, such as a piezoelectric device, and the like. As an example of non-limiting, when the temperature of the liquid GaCl ₃ is maintained at at least 100 ° C, a carrier gas such as He, N ₂ , H ₂ or Ar may be bubbled through the liquid GaCl ₃ , such that the source The gas may comprise a pre-driven gas delivered by one or more carrier gases.

In some embodiments, the temperature of the gas inflow conduits 140A-140E can be controlled between the temperatures of the gas sources 142A-142E and the temperature of the reaction chamber 102. The temperatures of the gas inflow conduits 140A-140E and associated mass flux sensors, controllers, etc. may be gradually increased by a first temperature (e.g., about 100 ° C or higher) at one of the individual outlets of the gas sources 142A-142E. A second temperature (e.g., about 150 ° C or lower) to the inlet of the reaction chamber 102 prevents the gases (e.g., GaCl ₃ vapor) from condensing within the gas inflow conduits 140A - 140E. As an option, the individual gas inflow conduits 140A-140E between the gas sources 142A-142E and the reaction chamber 102 can be about 3 feet or less, about 2 feet or less, or even about 1 foot or more. short. The pressure of the source gases can be controlled by one or more pressure control systems.

In other embodiments, the deposition system 100 can include less than five (eg, one to four) gas inflow conduits and respective gas sources, or the deposition system 100 can include more than five (eg, six, Seven, etc.) gas flows into the conduit and the respective gas source.

One or more of the gas inflow conduits 140A-140E may extend to the gas injection device 130. The gas injection device 130 can include one or more blocks of material that can be carried into the reaction chamber 102 through the plurality of blocks of material. One or more cooling conduits 131 can pass through the blocks of material. A cooling fluid can flow through the one or more cooling conduits 131 to maintain the gas flowing through the gas injection devices 130 through the gas inflow conduits 140A-140E within a desired temperature range during operation of the deposition system 100. For example, during operation of the deposition system 100, the gas flowing through the gas injection device 130 via the gas inflow conduits 140A-140E is preferably maintained at a temperature below about 200 °C (eg, about 150 °C).

As an option, the deposition system 100 can include an internal precursor gas furnace 138, as proposed by Bertram et al. on August 22, 2011, entitled "Deposition System Containing a Precursor Gas Furnace in a Reaction Chamber and Related Manufacturing Methods ( DE 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。

With continued reference to FIG. 1, the exhaust and loading subassembly 132 can include a vacuum chamber 194 through which the gas flowing through the reaction chamber 102 can be evacuated and discharged from the reaction chamber 102. The vacuum in the vacuum chamber 194 is generated by the vacuum device 133. As shown in FIG. 1, the vacuum chamber 194 can be located below the reaction chamber 102.

The exhaust and loading subassembly 132 can further include a flush gas curtain assembly 196 that is configured and oriented to provide a flow of flushing gas that is substantially a flat curtain that exits the flushing gas curtain device 196 and Flow into the vacuum chamber 194. The exhaust and loading subassembly 132 can also include an access door 188 that can be selectively opened to load and/or unload the workpiece substrates 136 from the substrate support structure 134 and can be selectively closed The workpiece substrates 136 are processed using the deposition system 100. In some embodiments, the access door 188 can include at least one panel that is configured to move between a first position of closure and a second position of opening. In some embodiments, the access door 188 can extend through one of the side walls of the reaction chamber 102.

The reaction chamber 102 can be at least substantially closed such that when the panel of the access door 188 is in the closed first position, the substrate support structure 134 cannot be accessed via the access door 188. When the panel of the access door 188 is in the second position of opening, the substrate support structure 134 can be accessed via the access door 188.

The flushing gas curtain emitted by the flushing gas curtain device 196 can reduce or prevent gas from escaping from the reaction chamber 102 during loading and/or unloading of the workpiece substrate 136.

Gas byproducts, carrier gas, and any excess precursor gases may then be withdrawn from the reaction chamber 102 via the exhaust and loading subassembly 132.

As shown in FIG. 1, the deposition system 100 can include a plurality of thermal radiation emitters 104. The thermal radiation emitters 104 are grouped to form thermal radiation in the range of electromagnetic radiation wavelengths that emit at least one of an infrared region and a visible region of the electromagnetic radiation spectrum. For example, the thermal radiation emitters 104 can include heat lamps (not shown) that are grouped to provide thermal energy in the form of electromagnetic radiation.

In some embodiments, the thermal radiation emitters 104 can be located below the exterior of the reaction chamber 102 and in close proximity to the bottom wall 126. In other embodiments, the thermal radiation emitters 104 can be located above and adjacent to the reaction chamber 102, beside the reaction chamber 102 and in close proximity to one or more of the side walls 128, or a combination of the foregoing.

The heat radiation emitters 104 can be arranged in a plurality of rows of heat radiation emitters 104 so that the columns can be independently controlled. In other words, the thermal energy emitted by each column of thermal radiation emitters 104 can be independently controlled. The alignment of the columns can be perpendicular to the direction of the net flow of gas through the reaction chamber 102 in the lateral direction, from the perspective of Figure 1 from left to right. Thus, if desired, each of the independently controlled thermal radiation emitters 104 can provide a selected one of the thermal gradients covering the entire reaction chamber 102.

The heat radiation emitters 104 may be located outside the reaction chamber 102 and configured to emit heat radiation through at least one of the chamber walls of the reaction chamber 102 to enter the interior of the reaction chamber 102. Thus, at least a portion of the walls of the chamber through which the thermal radiation passes (to be introduced into the reaction chamber 102) may comprise a transparent material such that the thermal radiation penetrates efficiently into the interior of the reaction chamber 102. In particular, the transparent material is a material that is at least substantially transparent to electromagnetic radiation of certain wavelengths, and the electromagnetic radiation of the wavelengths corresponds to the thermal radiation emitted by the thermal radiation emitters 104. For example, for the thermal radiation emitted by the thermal radiation emitters 104 and impinging on the transparent material, there is at least about 80%, at least about 90%, or even at least about 95% of the thermal radiation in its wavelength range. It passes through the transparent material and enters the interior of the reaction chamber 102.

As an example of non-limiting, the transparent material may comprise a transparent refractory ceramic material such as transparent quartz (i.e., cerium oxide (SiO ₂ )). The transparent quartz may be fused silica or may have an amorphous microstructure. In a further embodiment of the invention, any other refractory material may maintain both physical and chemical stability and heat from the thermal radiation emitters 104 at temperatures and environments during which the deposition process 100 is used to perform the deposition process. The radiation is sufficiently transparent and can also be used to form one or more of the walls of the deposition system 100.

As shown in FIG. 1 , in some embodiments, the thermal radiation emitters 104 may be disposed below the exterior of the reaction chamber 102 and adjacent to the bottom wall 126 of the reaction chamber 102 . In such embodiments, the bottom wall 126 may comprise a transparent material, such as transparent quartz, such that the thermal radiation emitted by the thermal radiation emitters 104 penetrates into the interior of the reaction chamber 102 as described above. Of course, the thermal radiation emitters 104 can be provided adjacent to other chamber walls of the reaction chamber 102, and at least a portion of the chamber walls can also comprise a transparent material as described herein.

As previously discussed, the deposition system 100 can include one or more metering devices 106 to in situ detect and/or measure one or more characteristics of a workpiece substrate 136 within the reaction chamber 102, or deposit thereon. One or more characteristics of a material on the workpiece substrate 136. The one or more metering devices 106 can include, for example, one or more of a reflectometer, a deflectometer, a pyrometer. In the art to which the present invention pertains, reflectometers are commonly used to measure the growth rate and/or morphology of materials deposited on the workpiece substrate 136 in the reaction chamber 102. In the art to which the present invention pertains, an offset meter is commonly used to measure the flatness or unevenness (e.g., curvature) of the workpiece substrate 136 (and/or the material deposited thereon). In the art to which the present invention pertains, pyrometers are commonly used to measure the temperature of the workpiece substrate 136 within the reaction chamber 102. These metering devices 106 include one or more sensors 108 for detecting and/or measuring electromagnetic radiation of one or more predetermined wavelengths to achieve a measure of each of the metering devices. In some of these metering devices 106, the received and detected electromagnetic radiation may also be emitted by the metering device 106. In other words, the metering device 106 can emit electromagnetic radiation toward the workpiece substrate 136 and then detect the electromagnetic radiation emitted by the workpiece substrate 136 after it is reflected, deflected, or otherwise otherwise affected.

The one or more metering devices 106 and associated sensors 108 can be external to the reaction chamber 102. The sensors 108 can be oriented and assembled to receive electromagnetic radiation signals that pass from the interior of the reaction chamber 102 to the exterior of the reaction chamber 102. For example, as shown in FIG. 1 , the one or more metering devices 106 and associated sensors 108 can be located above and adjacent to the reaction chamber 102 . here The sensors 108 can be oriented and assembled to receive electromagnetic radiation signals that pass from the interior of the reaction chamber 102 through the top wall 124 to the exterior of the reaction chamber 102. Thus, at least the cavity wall (eg, the top wall 124) is passed by the electromagnetic radiation signal to reach portions of the sensors 108, and may at least substantially correspond to electromagnetic radiation signals received by the sensors 108. The wavelength of one or more of the electromagnetic radiation is transparent. At least the portion of the chamber wall that is passed by the electromagnetic radiation signal to the sensors 108 can comprise a transparent material, such as transparent quartz, as previously described.

The one or more electromagnetic radiation wavelengths corresponding to the electromagnetic radiation signals received by the sensors 108 may belong to at least one of an infrared region and a visible region of the electromagnetic radiation spectrum, and may correspond to the thermal radiation emissions. The electromagnetic radiation emitted by the body 104 is within the wavelength range of the electromagnetic radiation. Therefore, the sensor 108 of the one or more metering devices 106 can receive and detect the dissipated electromagnetic radiation emitted by the heat radiation emitters 104, and the dissipative electromagnetic radiation may be in the detected electromagnetic radiation signals. This results in noise, which adversely affects the ability to utilize the one or more metering devices 106 to obtain accurate measurements. Moreover, in some embodiments, the walls of the reaction chamber 102 can be used to reflect and direct the thermal radiation emitted by the thermal radiation emitters 104 toward the sensors 108 of the one or more metering devices 106.

Thus, in accordance with an embodiment of the present invention, the deposition system 100 can further include one or more volumes of opaque material, the locations of which can be selected to prevent at least some of the thermal radiation emitted by the thermal radiation emitters 104 from being Or the sensors 108 of the plurality of metering devices 106 are detected. The opaque material is opaque to the wavelength of electromagnetic radiation over a range of wavelengths, and the wavelength of the electromagnetic radiation in the range of wavelengths corresponds to the wavelength of the thermal radiation emitted by the thermal radiation emitters 104. In other words, the opaque material is opaque to at least a portion of the thermal radiation emitted by the thermal radiation emitters 104. For example, for the thermal radiation emitted by the thermal radiation emitters 104 and impinging on a thickness of the opaque material sample, it is only about 25% or less, about 15% or less in its wavelength range. Lower, or even about 5% or less, can pass through the opaque material sample.

As one non-limiting example, the opaque material may comprise an opaque refractory ceramic material, such as opaque quartz (i.e., silicon dioxide (SiO _2)). The opaque quartz may be fused silica or may have an amorphous microstructure. In some embodiments, the quartz may comprise microvoids (i.e., bubbles) or other inclusions that render the quartz opaque. Any other refractory material may be physically and chemically stable while maintaining temperature and environment during the deposition process using the deposition system 100, and the heat radiation emitted by the heat radiation emitters 104 is sufficiently opaque, The opaque material of the embodiment of the invention is used.

As shown in FIG. 1, in some embodiments, one or more opaque bodies 148 can be disposed within the reaction chamber 102, each opaque body comprising a volume of such opaque material. In some embodiments, the one or more opaque bodies 148 can comprise a substantially flat plate-like structure. In such embodiments, the generally planar plate-like structures can be positioned laterally such that they extend generally parallel to the top wall 124 and the bottom wall 126, as shown in FIG. The one or more opaque bodies 148 may be disposed between the top wall 124 and the bottom wall 126, and may be disposed and oriented to shield the sensors 108 from the heat radiation emitter 104. At least some of the effects of radiation. For example, a substantially flat plate opaque body 148 can be positioned above the inner precursor gas furnace 148 and adjacent to the gas injection device 130, while an additional substantially planar plate opaque body 138 can be located adjacent the exhaust and loading subassembly. 132, as shown in Figure 1.

Additionally, at least a portion of one or more of the chamber walls can comprise a volume of opaque material. By way of example, Figure 2 is a simplified perspective view of the deposition system 100 of Figure 1. In Figure 2, the opaque material is represented by dot shades to provide an opaque area of the cavity wall.

As shown in FIG. 2, and with continued reference to FIG. 1, at least a portion of one or more of the sidewalls 128 can comprise an opaque material. The sidewalls 128 can include the sidewalls 128 extending between the gas injection device 130 and the exhaust and loading subassembly 132 along the reaction chamber 102 in the longitudinal direction. In the embodiment illustrated in Figure 2, the sidewalls 128 extending longitudinally along the reaction chamber 102 are formed entirely of opaque material. In other embodiments, only a portion of the sidewalls 128 comprise an opaque material.

As previously described, the sensor 108 of the one or more metering devices 106 can be disposed external to the reaction chamber 102 and in close proximity to a chamber wall of the reaction chamber 102. The chamber wall immediately adjacent to the sensors 108 may include one or more transparent portions defining a transparent window through which an electromagnetic radiation signal can pass before striking a sensor 108, the sensors 108 The adjacent chamber wall also includes one or more opaque portions that shield the sensor 108 from the dissipative electromagnetic radiation emitted by the thermal radiation emitters 104. For example, in the embodiment of FIG. 2, the sensors 108 of the one or more metering devices 106 (FIG. 1) are disposed proximate the top wall 124. The top wall 124 includes a volume of opaque material 150 and a transparent window 152 that passes through the volume of opaque material 150. Such an electromagnetic radiation signal can pass through the transparent windows 152 and strike the sensors 108, and the volume of opaque material 150 can shield the sensors 108 from the heat radiation emitters 104 ( Figure 1) Effect of electromagnetic radiation emitted.

The portions of the opaque material of the chamber walls may be part of the chamber walls, or the portions of the opaque material of the chamber walls may comprise, for example, opaque materials disposed adjacent to (or joined to) the chamber walls Board or other object. As an example of non-limiting, the opaque material body 150 of the top wall 124 can comprise a substantially flat plate-like structure formed of an opaque material having holes that define the transparent windows 152 through the material. The substantially planar plate-like structure can be disposed or joined to another substantially planar plate-like transparent structure formed of a transparent material and constituting the remainder of the top wall 124.

3A through 3C are diagrams for further describing an embodiment of the present invention. 3A is a simplified schematic diagram showing an example of an emission spectrum of thermal radiation emitted by the thermal radiation emitters 104 (FIG. 1). In other words, Figure 3A is a graph of the intensity of the emitted thermal radiation as a function of the wavelength of the emitted thermal radiation. The wavelengths depicted in Figure 3A (and Figures 3B and 3C) cover from the visible region of the electromagnetic radiation spectrum (e.g., from about 380 nm to about 760 nm) to the infrared region of the electromagnetic radiation spectrum (e.g., from about 750 nm to about 1.0 mm). . Figure 3B is a graph of the percentage of electromagnetic radiation radiating a sample of one or more of the thick transparent material of one or more of the walls, as a function of wavelength, which is in the wavelength range of Figure 3A. the same. Similarly, Figure 3C is a graph of the percentage of electromagnetic radiation radiating a sample of one or more of the thick opaque material of one or more of the walls as previously described, the percentage being as a function of wavelength, and the wavelength range is as shown in Figure 3A. 3B presents the same wavelength range.

Referring to FIG. 3A, in accordance with an embodiment of the present invention, a range of wavelengths can be defined, for example, from a range of a first wavelength λ ₁ to a second wavelength λ ₂ , the heat radiation emitters 104 (FIG. 1) can be grouped. It constitutes the emission of heat radiation in this wavelength range. The thermal radiation emitters 104 can also emit thermal radiation having a wavelength outside the range of the first wavelength λ ₁ to the second wavelength λ ₂ , but the wavelength emitted by the thermal radiation includes the first wavelength λ ₁ and the The wavelength between the second wavelength λ ₂ . The sensors 108 (FIG. 1) of the one or more metering devices 106 can be oriented and grouped to receive electromagnetic radiation signals of one or more predetermined signal wavelengths at the first wavelength λ ₁ to the second wavelength λ ₂ Within the range, for example, the signal wavelength λ _S shown in FIG. 3A.

As previously discussed, the thermal radiation emitters 104 (Fig. 1) can be configured to emit thermal radiation that can pass through at least one of the walls of the chamber and into the interior region of the reaction chamber 102. The at least one cavity wall penetrated by the thermal radiation may comprise a transparent material that is at least substantially transparent to the wavelength of electromagnetic radiation in the range of the first wavelength λ ₁ to the second wavelength λ ₂ . For example, Figure 3B presents a graph of the percentage of electromagnetic radiation that thermal radiation penetrates one or more of the one-thick transparent material samples of the walls, as a function of wavelength. As shown in FIG. 3B, the transparent material has an average transmittance of at least about 80% in the wavelength range from the first wavelength λ ₁ to the second wavelength λ ₂ . In other embodiments, the transparent material may have an average transmittance of at least about 90%, or even at least about 95%, over a wavelength range from the first wavelength λ ₁ to the second wavelength λ ₂ .

In addition, as described above, at least one volume of the opaque material in the deposition system 100 is opaque to the wavelength of electromagnetic radiation in the range of the first wavelength λ ₁ to the second wavelength λ ₂ , and the at least one volume of the opaque material is used. The sensor 108 that shields the one or more metering devices 106 is unaffected by at least a portion of the heat radiation emitted by the heat radiation emitters 104 (FIG. 1). For example, Figure 3C presents a graph of the percentage of electromagnetic radiation through which thermal radiation penetrates one or more of the walls of the cavity thickness of the opaque material as a function of wavelength. As shown in FIG. 3C, the opaque material has an average transmittance of about 25% or less in the wavelength range from the first wavelength λ ₁ to the second wavelength λ ₂ . In other embodiments, the average transmittance of the opaque material in the wavelength range from the first wavelength λ ₁ to the second wavelength λ ₂ may be about 15% or less, or even about 5% or less.

In some embodiments, when the wavelength range of the first wavelength λ ₁ to the second wavelength λ ₂ is defined, an area under the emission spectrum curve of the thermal radiation emitted by the thermal radiation emitters 104 is obtained (for example, FIG. 3A The above) comprises at least about 50%, at least about 60%, or even at least about 70% of the total area under the emission spectrum of the visible and infrared regions of the electromagnetic radiation spectrum (ie, 380 nm to 1.0 mm). These conditions can be met.

Other embodiments of the invention include methods of making and using the deposition systems described herein.

For example, referring again to FIGS. 1 and 2, a deposition system 100 can be formed by placing one or more thermal radiation emitters 104 outside of a reaction chamber 102 adjacent to the reaction chamber 102, the reaction chamber 102 including a Or multiple chamber walls. The thermal radiation emitters 104 can be oriented to emit thermal radiation through at least one of the chamber walls and into the interior of the reaction chamber 102. The thermal radiation emitters 104 can be selected to include an emitter that is configured to form thermal radiation in the range of electromagnetic radiation wavelengths that emit at least one of an infrared region and a visible region of the electromagnetic radiation spectrum. The wavelength range can extend from a first wavelength λ ₁ to a second wavelength λ ₂ as described above with reference to Figures 3A through 3C.

At least one of the chamber walls can be selected to comprise a transparent material that is at least substantially transparent to electromagnetic radiation in the wavelength range, as described above with reference to Figure 3B.

A sensor 108 of at least one metering device 106 can be disposed external to the reaction chamber 102 and adjacent to the reaction chamber 102. The sensor 108 can be oriented to receive an electromagnetic transmission from the interior of the reaction chamber 102 to the exterior of the reaction chamber 102. Radiation signal. Furthermore, the sensor 108 can be selected such that the sensor 108 is configured to detect electromagnetic radiation signals of one or more wavelengths in the wavelength range, such as the signal wavelengths previously described with reference to Figures 3A through 3C. λ _S .

At least one volume of opaque material may be provided at a location to prevent at least some of the thermal radiation emitted by the one or more thermal radiation emitters 104 from being detected by the sensor 108 of the one or more metering devices 106. The opaque material can be selected to comprise a material that is opaque to wavelengths of electromagnetic radiation in the wavelength range from the first wavelength λ ₁ to the second wavelength λ ₂ as described above with reference to Figure 3C. In some embodiments, one or more of the chamber walls can be selected to include the at least one volume of opaque material. Additionally or as an option, an opaque body can be selected to contain the opaque material and the opaque body can be disposed within the reaction chamber 102. The opaque body can be selected to comprise a substantially flat plate-like structure.

As an option, the reaction chamber 102 can include a top wall 124, a bottom wall 126, and at least one sidewall 128 between the top wall 124 and the bottom wall 126. In some such embodiments, as an option, the one or more thermal radiation emitters 104 can be disposed below the exterior of the reaction chamber 102 and in close proximity to the bottom wall 126, and the sensing of the one or more metering devices 106 The device 108 can be disposed above the exterior of the reaction chamber 102 and in close proximity to the top wall 124. In such embodiments, the bottom wall 126 can be selected to include the transparent material. Furthermore, at least one of the top wall 124 and the bottom wall 126 can be selected to include the at least one volume of opaque material. Additionally, or as an option, an opaque body 148 can be selected and placed within the reaction chamber 102 as previously described with reference to FIG.

As an example of non-limiting, the transparent material may comprise a transparent quartz material, and the opaque material may comprise an opaque quartz material as previously described.

The method of using deposition system 100 can operate in accordance with further embodiments of the present invention. At least one workpiece substrate 136 is disposed within a reaction chamber 102. Thermal radiation may be emitted from at least one thermal radiation emitter 104 external to the reaction chamber 102, through one or more chamber walls of the reaction chamber 102 into the interior of the reaction chamber 102, the one or more chamber walls containing a pair The heat radiation is a transparent transparent material. At least one process gas is introduced into the reaction chamber 102, and at least one of the workpiece substrate 136 and the at least one process gas is heated by the thermal radiation. Within the reaction chamber 102, material may be deposited on the workpiece substrate 136 from the at least one process gas. The one or more metering devices The sensor 108 of the 106 can be used to sense an electromagnetic radiation signal representative of at least one characteristic of the workpiece substrate 136 (e.g., a characteristic of the material deposited on the workpiece substrate 136). The sensor 108 can be disposed outside of the reaction chamber 102 and adjacent to the reaction chamber 102. The electromagnetic radiation signal detected by the sensor 108 can pass from the interior of the reaction chamber 102 through at least a portion of one or more chamber walls of the reaction chamber 102 (which is transparent to the electromagnetic radiation signal) Detector 108. As previously described, the sensor 108 can be shielded from at least some of the thermal radiation emitted by the at least one thermal radiation emitter 104 using at least one volume of opaque material. For example, at least one cavity wall of the reaction chamber 102 (which includes at least one volume of opaque material) can be used to shield the sensor 108 from at least a portion of the thermal radiation. Additionally or as an option, the sensor 108 can be shielded from at least a portion of the thermal radiation by at least one opaque body 148 disposed within the reaction chamber 102 as previously described.

Exemplary embodiments of other non-limiting properties of the invention are described below.

Embodiment 1: A deposition system comprising: a reaction chamber comprising one or more chamber walls; at least one thermal radiation emitter grouped to form at least one of an infrared region and a visible region emitting a spectrum of electromagnetic radiation Thermal radiation in the wavelength range of electromagnetic radiation passes through at least one of the one or more chamber walls into the interior of the reaction chamber, the at least one chamber wall comprising a transparent material, the transparent material being at least substantially The electromagnetic radiation in the wavelength range is transparent; at least one metering device comprising a sensor, the sensor being located outside the reaction chamber and oriented and grouped to receive electromagnetic radiation signals of one or more wavelengths in the wavelength range, The electromagnetic radiation signal is transmitted from the interior of the reaction chamber to the outside of the reaction chamber; and at least one volume of the opaque material, the opaque material being opaque to the wavelength of the electromagnetic radiation in the wavelength range, the location of the at least one volume of the opaque material Preventing at least some of the thermal radiation emitted by the at least one thermal radiation emitter from being at least one metered The sensor of the device is detected.

Embodiment 2: The deposition system of Embodiment 1, wherein the at least one volume of opaque material comprises at least a portion of one of the one or more chamber walls.

Embodiment 3: The deposition system of Embodiment 1, further comprising an object disposed within the reaction chamber, the object comprising the at least one volume of opaque material.

Embodiment 4: The deposition system of Embodiment 3, wherein the object disposed inside the reaction chamber comprises a substantially flat plate-like structure.

Embodiment 5: The deposition system of any one of embodiments 1 to 3, wherein one of the reaction chambers The one or more chamber walls include a top wall, a bottom wall, and at least one side wall between the top wall and the bottom wall.

Embodiment 6: The deposition system of Embodiment 5, wherein the at least one thermal radiation emitter is disposed proximate to the bottom wall.

Embodiment 7: The deposition system of Embodiment 5 or Embodiment 6, wherein the bottom wall comprises the transparent material.

Embodiment 8: The deposition system of Embodiment 7, wherein the bottom wall comprises transparent quartz.

Embodiment 9. The deposition system of any of embodiments 5 to 8, wherein at least a portion of the top wall comprises a volume of opaque material, such as opaque quartz.

Embodiment 10: The deposition system of any of embodiments 5-9, wherein at least a portion of the at least one sidewall comprises a volume of opaque material, such as opaque quartz.

Embodiment 11: The deposition system of any of embodiments 5 to 10, wherein the sensor of the at least one metering device is disposed proximate the top wall.

The deposition system of any one of embodiments 5 to 11, wherein the at least one thermal radiation emitter is disposed outside the reaction chamber and adjacent to the bottom wall, at least a portion of the bottom wall comprising the transparent material, and A sensor of the at least one metering device is disposed outside of the reaction chamber and in close proximity to the top wall.

Embodiment 13: The deposition system of embodiment 12, wherein at least one of the top wall and the at least one sidewall comprises the at least one volume of opaque material.

Embodiment 14: The deposition system of Embodiment 13, further comprising another volume of opaque material disposed within the reaction chamber and interposed between the top wall and the bottom wall.

Embodiment 15: The deposition system of Embodiment 12, wherein the at least one volume of opaque material is disposed inside the reaction chamber and between the top wall and the bottom wall.

Embodiment 16. The deposition system of any of embodiments 1 to 15, wherein the at least one thermal radiation emitter comprises a plurality of luminaires.

Embodiment 17: The deposition system of Embodiment 1, wherein the transparent material comprises transparent quartz.

Embodiment 18. The deposition system of any of embodiments 1 to 17, wherein the opaque material comprises opaque quartz.

Embodiment 19: A method of forming a deposition system, the method comprising: disposing at least one thermal radiation emitter outside a reaction chamber and adjacent to the reaction chamber, the reaction chamber including one or more chamber walls; orienting the at least one heat Radiating the emitter such that it emits thermal radiation through at least one of the one or more chamber walls and into the interior of the reaction chamber; the at least one thermal radiation emitter is selected to include an emitter, the emitter being Forming a thermal radiation in a range of electromagnetic radiation wavelengths that emit at least one of an infrared region and a visible light region of the electromagnetic radiation spectrum; the at least one cavity wall is selected to comprise a transparent material, the transparent material being at least substantially within the wavelength range The electromagnetic radiation is transparent; a sensor of the at least one metering device is disposed outside the reaction chamber and adjacent to the reaction chamber; the sensor is oriented to receive an electromagnetic radiation signal transmitted from the interior of the reaction chamber to the outside of the reaction chamber Selecting the sensor to include one of the electromagnetic radiation signals that are grouped to detect one or more wavelengths in the wavelength range Providing at least one volume of opaque material at a location to prevent at least some of the thermal radiation emitted by the at least one thermal radiation emitter from being detected by the sensor of the at least one metering device; and selecting the opaque material, It is made to contain a material that is opaque to the wavelength of electromagnetic radiation in the wavelength range.

Embodiment 20: The method of Embodiment 19, further comprising selecting at least one of the one or more chamber walls to include the at least one volume of opaque material.

Embodiment 21: The method of Embodiment 20, further comprising: placing an object inside the reaction chamber; and selecting the object to include another volume of opaque material.

Embodiment 22: The method of Embodiment 19, further comprising: placing an object inside the reaction chamber; and selecting the object to include the at least one volume of opaque material.

Embodiment 23: The method of Embodiment 22, further comprising selecting the object to comprise a substantially flat plate-like structure.

The method of any one of embodiments 19 to 23, further comprising: selecting one or more chamber walls of the reaction chamber to include a top wall, a bottom wall, and the top wall and the bottom wall At least one side wall.

Embodiment 25. The method of embodiment 24, further comprising positioning the at least one thermal radiation emitter proximate the bottom wall.

Embodiment 26: The method of Embodiment 24 or Embodiment 25, further comprising selecting the bottom wall to comprise the transparent material.

Embodiment 27: The method of any one of embodiments 24 to 26, further comprising selecting the bottom wall Make it contain transparent quartz.

The method of any one of embodiments 24 to 27, further comprising selecting the top wall to include the at least one volume of opaque material.

The method of any one of embodiments 24 to 28, further comprising selecting the at least one sidewall to include the at least one volume of opaque material.

The method of any one of embodiments 24 to 29, further comprising positioning the sensor of the at least one metering device proximate the top wall.

Embodiment 31: The method of Embodiment 30, further comprising selecting the top wall such that at least a portion thereof comprises the transparent material.

The method of any one of embodiments 24 to 31, further comprising: disposing the at least one thermal radiation emitter outside the reaction chamber and adjacent to the bottom wall; selecting the bottom wall to include the transparent material And locating the sensor of the at least one metering device outside of the reaction chamber and in close proximity to the top wall.

Embodiment 33: The method of Embodiment 32, further comprising selecting at least one of the top wall and the bottom wall to include the at least one volume of opaque material.

Embodiment 34: The method of Embodiment 32 or Embodiment 33, further comprising: placing an object inside the reaction chamber; and selecting the object to include the at least one volume of opaque material.

Embodiment 35: A method of depositing material onto a workpiece substrate using a deposition system, the method comprising: disposing at least one workpiece substrate within a reaction chamber; and causing at least one thermal radiation of thermal radiation from outside the reaction chamber An emitter is emitted into the interior of the reaction chamber through at least a portion of one or more chamber walls of the reaction chamber, at least a portion of the one or more chamber walls comprising a transparent material that is transparent to the heat radiation; Introducing at least one process gas into the reaction chamber; heating at least one of the workpiece substrate and the at least one process gas by the thermal radiation; depositing material from the at least one process gas on the at least one workpiece substrate; a sensor external to the reaction chamber and adjacent to at least one metering device of the reaction chamber, detecting an electromagnetic radiation signal representative of at least one characteristic of the at least one workpiece substrate, the electromagnetic radiation signal passing through the interior of the reaction chamber Passing one or more chamber walls of the reaction chamber that are transparent to the electromagnetic radiation signal to the sensor; and utilizing at least one volume The opaque material shields the sensor from at least a portion of the thermal radiation.

Embodiment 36: The method of embodiment 35, wherein shielding the sensor from at least a portion of the thermal radiation with at least one volume of opaque material comprises utilizing at least one of the one or more lumen walls The sensor is shielded from being affected by at least a portion of the thermal radiation, the at least one lumen wall comprising the at least one volume of opaque material.

Embodiment 37: The method of Embodiment 35 or Embodiment 36, wherein shielding the sensor from at least a portion of the thermal radiation with at least one volume of opaque material comprises utilizing at least a portion disposed within the reaction chamber An object shields the sensor from at least a portion of the thermal radiation, the at least one object comprising the at least one volume of opaque material.

The above-mentioned embodiments are not intended to limit the scope of the invention, and the embodiments are only examples of the embodiments of the invention, which are defined by the scope of the appended claims and their legal equivalents. Any equivalent embodiments are within the scope of the invention. In fact, various modifications of the invention, such as a substitute for a useful combination of the elements, in addition to those shown and described herein, will be apparent from the description of the specification. It became obvious. Such modifications are also within the scope of the appended claims.

100‧‧‧Deposition system

102‧‧‧Reaction chamber

103A‧‧‧First position

103B‧‧‧second position

104‧‧‧thermal radiation emitter

106‧‧‧Measuring device

108‧‧‧Sensor

124‧‧‧ top wall

126‧‧‧ bottom wall

128‧‧‧ side wall

130‧‧‧ gas injection device

132‧‧‧Load subassembly

133‧‧‧Vacuum

134‧‧‧Substrate support structure

136‧‧‧Workpiece substrate

139‧‧‧ Spindle

140A~140E‧‧‧ catheter

141A~141E‧‧‧ gas valve

142A~145E‧‧‧ gas source

188‧‧‧In and out

194‧‧‧ Vacuum chamber

The invention will be more fully understood by the following detailed description of exemplary embodiments of the invention, which are illustrated in the accompanying drawings in which: FIG. In an exemplary embodiment, the deposition system includes a volume of opaque material for shielding a sensor of a metering device from thermal radiation emitted by a heat radiating emitter in the deposition system; 1 is a partial perspective view of the deposition system; FIGS. 3A to 3B are simplified schematic diagrams for explaining the wavelength of heat radiation emitted by the heat radiation emitter in the deposition system of FIGS. 1 and 2 and the transparency of various components in the deposition system The relationship between the transmittance of the material (Fig. 3B) and the opaque material (Fig. 3C) is the function of the wavelength.

100‧‧‧Deposition system

102‧‧‧Reaction chamber

103A‧‧‧First position

103B‧‧‧second position

104‧‧‧thermal radiation emitter

106‧‧‧Measuring device

108‧‧‧Sensor

124‧‧‧ top wall

126‧‧‧ bottom wall

128‧‧‧ side wall

130‧‧‧ gas injection device

132‧‧‧Load subassembly

133‧‧‧Vacuum

134‧‧‧Substrate support structure

136‧‧‧Workpiece substrate

139‧‧‧ Spindle

140A~140E‧‧‧ catheter

141A~141E‧‧‧ gas valve

142A~145E‧‧‧ gas source

188‧‧‧In and out

194‧‧‧ Vacuum chamber

Claims (12)

a deposition system comprising: a reaction chamber comprising a top wall, a bottom wall, and at least one side wall between the top wall and the bottom wall; at least one heat radiation emitter disposed adjacent to the bottom a wall, the emitter being configured to form thermal radiation in a range of electromagnetic radiation wavelengths that emit at least one of an infrared region and a visible region of the electromagnetic radiation spectrum to pass through at least one of the chamber walls and into the interior of the reaction chamber The bottom wall of the reaction chamber comprises a transparent material that is at least substantially transparent to electromagnetic radiation in the wavelength range, the bottom wall comprising transparent quartz; at least one metering device comprising one of the outside of the reaction chamber a sensor configured to receive and receive electromagnetic radiation signals of one or more wavelengths in the wavelength range, the electromagnetic radiation signals being transmitted from the interior of the reaction chamber to the outside of the reaction chamber; and at least one volume of opacity a material having an opaque material within a range of electromagnetic radiation wavelengths of at least one of an infrared region and a visible region of the electromagnetic radiation spectrum The wavelength of the electromagnetic radiation is opaque, and the at least one volume of the opaque material is located to prevent at least some of the heat radiation emitted by the at least one heat radiation emitter from being detected by the sensor of the at least one metering device, the top wall At least a portion comprises the at least one volume of opaque material comprising opaque quartz. The deposition system of claim 1, wherein the at least one volume of opaque material comprises at least a portion of one of the one or more chamber walls. The deposition system of claim 1, further comprising an object disposed inside the reaction chamber, the object comprising the at least one volume of opaque material. The deposition system of claim 1, wherein at least a portion of the at least one sidewall comprises the at least one volume of opaque material, and wherein the opaque material comprises opaque quartz. The deposition system of claim 1, wherein the sensor of the at least one metering device is disposed adjacent to the top wall, and at least a portion of the top wall comprises the at least one volume of opaque material, and wherein the opaque material An opaque quartz is included, and wherein at least a portion of the at least one sidewall comprises the at least one volume of opaque material, and wherein the opaque material comprises opaque quartz. The deposition system of claim 1, wherein the at least one thermal radiation emitter is disposed outside the reaction chamber and adjacent to the bottom wall, at least a portion of the bottom wall comprising the transparent material, and the at least one metering device A sensor is disposed outside the reaction chamber and adjacent to the top wall, and wherein at least one of the top wall and the at least one sidewall comprises the at least one volume of opaque material. A method of forming a deposition system, the method comprising: disposing at least one thermal radiation emitter outside a reaction chamber and adjacent to the reaction chamber, the reaction chamber including a top wall, a bottom wall, and the top wall and the bottom At least one sidewall between the walls; orienting the at least one thermal radiation emitter such that the emitted thermal radiation passes through at least one of the one or more chamber walls and into the interior of the reaction chamber; the at least one thermal radiation is selected The emitter includes an emitter that is configured to form thermal radiation in a range of electromagnetic radiation wavelengths that emit at least one of an infrared region and a visible region of the electromagnetic radiation spectrum; the bottom wall is selected to include a transparent material, The transparent material is at least substantially transparent to electromagnetic radiation in the wavelength range, the transparent material comprising a quartz material; a sensor of at least one metering device is disposed outside the reaction chamber and adjacent to the reaction chamber; and the sensor is oriented Receiving an electromagnetic radiation signal transmitted from the interior of the reaction chamber to the outside of the reaction chamber; selecting the sensor to include the group composition detection One of the electromagnetic radiation signals of one or more wavelengths in the wavelength range; providing at least one volume of opaque material at a location to prevent at least some of the thermal radiation emitted by the at least one thermal radiation emitter from being subjected to the at least one metering device Detecting by the sensor; and selecting the opaque material to include wavelengths of electromagnetic radiation in the wavelength range A transparent material selected to include the at least one volume of opaque material, wherein the opaque material comprises opaque quartz. The method of claim 7, further comprising selecting at least one of the one or more chamber walls to include the at least one volume of opaque material. The method of claim 7, further comprising: placing an object inside the reaction chamber; and selecting the object to include the at least one volume of opaque material. The method of claim 7, further comprising selecting the at least one sidewall to include the at least one volume of opaque material, and wherein the opaque material comprises opaque quartz. The method of claim 7, further comprising: positioning the sensor of the at least one metering device proximate the top wall, the top wall being selected to include the at least one volume of opaque material, wherein the opaque material An opaque quartz is included, and the at least one sidewall is selected to comprise the at least one volume of opaque material, and wherein the opaque material comprises opaque quartz. The method of claim 7, further comprising: disposing the at least one heat radiation emitter outside the reaction chamber and adjacent to the bottom wall, and selecting the bottom wall to include the transparent material, the at least one metering A sensor of the device is disposed outside of the reaction chamber and adjacent to the top wall, and at least one of the top wall and the bottom wall is selected to include the at least one volume of opaque material.