TWI548727B - A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors - Google Patents

Description

Chemical mechanical polishing (CMP) composition comprising two resists

The present invention is basically directed to a chemical mechanical polishing (CMP) composition and its use in polishing substrates in the semiconductor industry. The CMP composition according to the present invention comprises two resists and exhibits improved polishing performance.

In the semiconductor industry, chemical mechanical polishing (abbreviated as CMP) is a well-known technique used in the fabrication of advanced photonic, microelectromechanical, and microelectronic materials and devices, such as semiconductor wafers.

CMP is used to planarize the surface of metals and/or oxides during fabrication of materials and devices used in the semiconductor industry. CMP utilizes the interaction of chemical and mechanical interactions to achieve the flatness of the surface to be polished. The chemical action is provided by a chemical composition (also known as a CMP composition or a CMP slurry). The mechanical action is typically carried out by a polishing pad, which is typically pressed onto the surface to be abraded and mounted on a moving platen. The movement of the platen is usually linear, rotating or orbital.

In a typical CMP method step, the wafer holder is rotated to bring the wafer to be polished into contact with the polishing pad. The CMP composition is typically applied between the wafer to be polished and the polishing pad.

In the state of the art, a CMP composition comprising substantially two resists is known and described, for example, in the following references: US 2009/0090888 A1 discloses a CMP composition comprising: (a) Abrasive, (b) oxidant, (c) accelerated compound (accelerating Compound), (d) an inhibitor, (e) a co-inhibitor, and (f) as a solvent for the remainder. The inhibitor can be an imidazoline-based or triazole-based compound. The co-inhibitor can be an amine carboxylate or a salt thereof, such as sarcosine.

In the state of the art, a CMP composition comprising acetylene or an acetylene-containing compound is known and described, for example, in the following references: US Pat. No. 7,311,855 B2, the disclosure of which is incorporated herein to An organic compound having an acetylenic bond and water. The organic compound may be represented by the formula R ¹ -C≡CR ² wherein R ¹ is a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms; and R ² is substituted or unsubstituted An alkyl group having 4 to 10 carbon atoms. In addition, the organic compound can be represented by the following formula

Wherein R ³ to R ⁶ are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, and R ⁷ and R ⁸ are each independently substituted or unsubstituted having 1 to The alkyl group of 5 carbon atoms, and "m" and "n" are each independently 0 or a positive number.

EP 1 279 708 A1 discloses a CMP composition comprising: (a) an abrasive, (b) at least one organic compound consisting of polyethylene oxide, polypropylene oxide, polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylene polyoxypropylene alkyl ether or a polyoxyalkylene alkyl addition polymer, the at least one organic compound having the following formula having a CC bond:

Wherein each of R ₁ to R ₆ is H or C _1-10 alkyl, each of X and Y is a vinyloxy or propyleneoxy group, and each of m and n is a positive number of 1 to 20, and (c) at least one Grinding the accelerated compound, (d) at least one resist, (e) hydrogen peroxide, and (f) water.

US 2007/0293049 A1 discloses a slurry for CMP of a Cu film comprising peroxosulfuric acid, a basic amino acid, a complexing agent, a surfactant, and colloidal cerium oxide. The surfactant can be acetylene glycol, its ethylene oxide adduct, and acetylene alcohol.

No. 7,138,073 B2 discloses a slurry for CMP of Cu comprising a first binder, a second binder, an oxidizing agent, a polishing rate promoter, abrasive particles and a surfactant having potassium dodecylbenzenesulfonate And acetylene glycol-based nonionic surfactant.

No. 7,419,910 B2 discloses a CMP slurry comprising a Cu oxidizing agent, a complexing agent for forming a Cu organic complex, a nonionic surfactant, inorganic particles and resin particles. The nonionic surfactant can be a nonionic surfactant based on acetylene glycol.

JP 2001/323253 A discloses a polishing composition for grinding a disk substrate comprising water, an abrasive and a grinding accelerator. The grinding accelerator may be a divalent or high valent carboxylic acid having an alkyne group. One of the grinding accelerators An example is acetylene dicarboxylic acid.

US 2008/0127573 A discloses a polishing composition comprising deionized water, abrasive particles, a pH adjusting agent, a water soluble thickener, an acetylene surfactant, and a heterocyclic amine. According to a specific example, the acetylene surfactant comprises an acetylene alcohol represented by the formula R ₁ R ₂ (OH)CC=CH, wherein R ₁ and R ₂ are each independently (OCH ₂ CH ₂ ) _n OCH ₂ CH ₃ , wherein n is 0 to 10. According to another embodiment, the acetylene surfactant comprises an acetylene diol represented by the formula R ₁ R ₂ (OH)CC≡CC(OH)R ₁ R ₂ , wherein R ₁ and R ₂ are each independently (OCH ₂ CH ₂ ) _n OCH ₂ CH ₃ , where n is from 0 to 10.

In the state of the art, amide compositions comprising a guanamine containing phthalic acid or comprising an alkanolamine are known and are described, for example, in the following references: JP 2009/272601 A discloses a CMP composition, Containing water, cerium oxide particles, and additives represented by one of the following formulas:

Wherein R ¹ to R ⁴ are (optionally substituted) monovalent organic groups, amine groups, H or hydroxyl groups; X ¹ and X ² are optionally substituted divalent organic groups; and p and q are 0 or 1. The additives may be succinic acid, maleic acid, aspartame, glutamic acid, carboxylic acid, amino acid, and an amphoteric surfactant.

KR 2007/047020 A discloses a CMP composition comprising: (a) an abrasive, (b) a cyclic compound having a guanamine bond as a chelating agent, and (c) having an amine group (-NH ₂ ) a compound of a carboxyl group (-COOH) and a guanamine bond (-NHCO-), which is preferably selected from the group consisting of glycine glycine, glycine, glycine, glycine, and arginine. , glycine glutamic acid and glycine alanine.

No. 6,114,249 A discloses a CMP composition comprising colloidal cerium oxide and triethanolamine for polishing a multi-material substrate, such as a cerium oxide-containing germanium wafer, wherein a thin tantalum nitride underlayer is used as a termination layer .

No. 6,063,306 A discloses a CMP composition comprising: (a) an abrasive, (b) an oxidizing agent and (c) an organic amine based compound selected from the group consisting of long chain alkylamines, alcohol amines and mixtures thereof. The alkanolamine is preferably triethanolamine.

One of the objects of the present invention is to provide a CMP composition that exhibits improved polishing performance, such as reduced erosion and dishing effects, and especially a combination of: high material removal rate (MRR), metal to be ground Low thermal static etch rate of the surface (metal-hSER) and low cold static etch rate of the metal surface to be polished (metal-cSER), static etch rate of low thermal metal ions (metal-hMSER), MRR and metal with respect to the surface of the metal to be polished The high ratio of hSER, the high ratio of MRR to metal-cSER, and the high ratio of MRR to metal-hMSER. Furthermore, another object is to provide a CMP composition that is particularly suitable and accepted for use in CMP of copper-containing layers in multilayer structures.

In addition, a separate CMP method is provided.

Therefore, a CMP composition (P) containing the following substances was found. (A) inorganic particles, organic particles or a mixture or composite thereof, (B) at least one N-heterocyclic compound as a resist, and (C) at least one other resist selected from the group consisting of Agent: (C1) acetylene alcohol, and (C2) a salt or adduct of the following: (C2a)amine, and (C2b) a carboxylic acid comprising at least one guanamine moiety, (D) at least one oxidizing agent, (E) at least one complexing agent, and (F) Aqueous medium.

Furthermore, the above mentioned objects of the present invention are achieved by a method for fabricating a semiconductor device comprising grinding a metal-containing substrate in the presence of the CMP composition.

Furthermore, the use of the CMP composition (P) for grinding substrates for use in the semiconductor industry has been found to achieve the objectives of the present invention.

Further, the use of the CMP composition (Q) is found, the CMP composition (Q) comprising: (A) inorganic particles, organic particles or a mixture or composite thereof, (D) at least one oxidizing agent, (E) at least one A mis-agent, (F) an aqueous medium, (G) a strong resist capable of strongly reducing the thermal static etch rate (metal-hSER) of the surface of the metal to be polished in such a way that it is at 0.001 mol/L (G) At the concentration, the metal-hSER of the reference composition (R2) is reduced by at least 75% compared to the reference composition (R1), (H) a weak resist capable of weakly lowering the metal-hSER in the following manner: At a concentration of mol/L (H), the metal-hSER of the reference composition (R3) is reduced by no more than 55% compared to the reference composition (R1). The CMP composition (Q) is used for chemical mechanical polishing of a metal-containing substrate, wherein (R1) is the same as the CMP composition (Q) but does not contain (G) and (H), and (R2) is the same as the CMP composition (Q) But without (H), and (R3) is the same as the CMP composition (Q) but does not contain (G), the metal-hSER is tested by 1×1吋[=2.54×2.54 cm] metal at 60 °C. The use of the CMP composition (Q) achieves the object of the present invention as determined by immersing the article in the corresponding composition for 5 minutes and measuring the mass loss before and after the impregnation.

Preferred specific examples are explained in the scope of the patent application and the specification. It will be understood that combinations of preferred embodiments are within the scope of the invention.

The semiconductor device can be fabricated by a method comprising performing CMP on the substrate in the presence of the CMP composition (P) or (Q). The method preferably includes subjecting the metal-containing substrate to CMP, that is, a substrate comprising a metal in the form of an element, an alloy, or a compound such as a metal nitride or oxide. Preferably, the method comprises performing CMP on the metal layer of the substrate, preferably including CMP of the copper layer of the substrate, and, for example, performing CMP on the copper layer of the substrate comprising copper and germanium.

The CMP composition (P) is used to grind any substrate used in the semiconductor industry, preferably for grinding a metal-containing substrate, more preferably for polishing a metal layer of the substrate, preferably for polishing a copper layer of the substrate, and for example A copper layer used to polish a substrate comprising copper and tantalum.

Regarding the CMP composition (Q) and its use, the composition is used for research The metal-containing substrate is preferably used for polishing the metal layer of the substrate, more preferably for polishing the copper layer of the substrate, and is preferably used for polishing a copper layer of a substrate comprising copper and germanium.

According to the invention, the CMP composition contains inorganic particles, organic particles or a mixture or composite (A) thereof. (A) may be - an inorganic particle, - a mixture or composite of different types of inorganic particles, - an organic particle, - a mixture or composite of different types of organic particles, or - one or more types of inorganic particles and one Or a mixture or composite of multiple types of organic particles.

The composite is a composite particle comprising two or more particles in such a manner that the two or more particles are bonded to each other mechanically, chemically or in another manner. An example of a composite is a core-shell particle that contains one particle in the outer layer (the outer shell) and another particle in the inner layer (core).

In general, a varying amount of particles (A) may be included. The amount of (A) is preferably not more than 10% by weight, more preferably not more than 4% by weight, most preferably not more than 2% by weight, such as not more than 1% by weight, based on the total weight of the respective composition. The amount of (A) is preferably at least 0.005 wt%, more preferably at least 0.01 wt%, most preferably at least 0.05 wt%, such as at least 0.1 wt%, based on the total weight of the respective composition.

In general, the particles (A) may have a varying particle size distribution. The particle size distribution of the particles (A) may be monomodal or multimodal. In the case of multimodal particle size distribution, double peaks are generally preferred. For the purpose of the present invention The CMP method has an easily reproducible property characteristic and an easily reproducible condition, and for (A), a unimodal particle size distribution is preferable. (A) Optimally has a monomodal particle size distribution.

The average particle size of the particles (A) can vary over a wide range. The average particle size is (d) the d ₅₀ value of the particle size distribution in the aqueous medium (D) and can be determined using dynamic light scattering techniques. Next, the d ₅₀ value is calculated under the assumption that the particles are substantially spherical. The width of the average particle size distribution is the distance between two intersections (given in units of the x-axis), where the particle size distribution curve crosses 50% of the relative particle count, with the height of the largest particle count normalized to 100% height.

The particle (A) preferably has an average particle size in the range of 5 to 500 nm, as measured by dynamic light scattering techniques using an apparatus such as the High Efficiency Particle Size Analyzer (HPPS) or Horiba LB550 from Malvern Instruments Ltd. In the range of 5 to 250 nm, preferably in the range of 50 to 150 nm and especially in the range of 90 to 130 nm.

The particles (A) may have various shapes. Thereby, the particles (A) may have one or substantially only one shape. However, it is also possible that the particles (A) have different shapes. For example, two differently shaped particles (A) may be present. For example, (A) may have the shape of a cube, a cube with chamfered edges, an octahedron, an icosahedron, an irregular sphere, or a sphere with or without protrusions or indentations. (A) is preferably a sphere having no protrusions or indentations or having only few protrusions or indentations.

The chemical nature of the particles (A) is not particularly limited. (A) a mixture or composite of particles which may have the same chemical properties or are of different chemical nature Things. Generally, particles (A) having the same chemical properties are preferred. In general, (A) may be - inorganic particles such as metals, metal oxides or carbides, including metalloids, metalloid oxides or carbides, or - organic particles such as polymer particles, - inorganic particles and organic a mixture or composite of particles.

The particles (A) are preferably inorganic particles. Among them, oxides and carbides of metals or metalloids are preferred. The particles (A) are more preferably alumina, cerium oxide, copper oxide, iron oxide, nickel oxide, manganese oxide, cerium oxide, cerium nitride, cerium carbide, tin oxide, titanium oxide, titanium carbide, tungsten oxide or cerium oxide. Zirconium oxide or a mixture or composite thereof. The particles (A) are preferably alumina, ceria, ceria, titania, zirconia or mixtures or composites thereof. In detail, (A) is cerium oxide. For example, (A) is colloidal cerium oxide. In general, colloidal cerium oxide is a fine amorphous, non-porous and typically spherical cerium oxide particle.

In another embodiment in which (A) is an organic particle or a mixture or composite of the inorganic particle and the organic particle, the polymer particle is preferred. The polymer particles can be homopolymers or copolymers. The copolymer can be, for example, a block copolymer or a statistical copolymer. The homopolymer or copolymer may have various structures such as linear, branched, comb, dendritic, entangled or crosslinked structures. The polymer particles can be obtained according to an anion, a cation, a controlled group, a radical mechanism and by a suspension or emulsion polymerization method. The polymer particles are preferably at least one of the following: polystyrene, polyester, alkyd, polyurethane, polylactone, polycarbonate, polyacrylate, polymethacrylate , polyether, poly (N- Alkyl acrylamide, poly(methyl vinyl ether); or a copolymer comprising at least one of the following as a monomer unit: vinyl aromatic compound, acrylate, methacrylate, cis. Adipic anhydride, acrylamide, methacrylamide, acrylic acid or methacrylic acid; or a mixture or composite thereof. Among them, polymer particles having a crosslinked structure are preferred.

In another embodiment in which (A) is an organic particle or a mixture or composite of the inorganic particle and the organic particle, the melamine particle is preferred.

In another specific example in which (A) is a mixture of inorganic particles and organic particles, (A) is preferably a mixture of inorganic particles and melamine particles, and (A) is more preferably selected from the group consisting of alumina, ceria, and dioxide. a mixture of inorganic particles and melamine particles of a group consisting of ruthenium, titanium dioxide, zirconium oxide or a mixture or composite thereof, and (A) is preferably a mixture of cerium oxide particles and melamine particles.

According to the invention, the CMP composition (P) comprises at least one N-heterocyclic compound as the resist (B). Typically, a resist is used in a metal CMP composition, particularly in a copper CMP composition, to reduce the static etch rate during the grinding process while maintaining a high material removal rate.

(P) preferably comprises a mixture of an N-heterocyclic compound (B) or two N-heterocyclic compounds (B). More preferably, (P) contains only one N-heterocyclic compound (B).

In general, it can contain a varying amount of (B). The amount of (B) is preferably not more than 4% by weight, more preferably not more than 1% by weight, most preferably not more than 0.5% by weight, such as not more than 0.2% by weight, based on the total weight of the respective composition. The amount of (B) is preferably at least 0.0005 wt%, more preferably up to the total weight of the corresponding composition. Less 0.005 wt%, optimally at least 0.01 wt%, such as at least 0.05 wt%.

In general, (B) can be any N-heterocyclic compound. (B) preferably pyrrole, imidazole, pyrazole, triazole, tetrazole, pyridine, hydrazine Pyrimidine, pyridyl ,three Thiazole, thiadiazole, thiophene Or a derivative thereof. (B) More preferably, it is imidazole, pyrazole, triazole, tetrazole or a derivative thereof. (B) is preferably a triazole or a derivative thereof. For example, (B) is 1,2,3-triazole, 1,2,4-triazole, benzotriazole or tolyltriazole.

In general, (B) may be a substituted or unsubstituted N-heterocyclic compound. In the specific example wherein (B) is a substituted N-heterocyclic compound, the substituent is preferably a halogen atom, a hydroxyl group, an alkoxy group, a thiol group, an amine group, an imido group, a nitro group, a carboxyl group or an alkylcarboxy group. , sulfonyl, alkyl, aryl, alkylaryl or arylalkyl, more preferably a halogen atom, a hydroxyl group, an alkyl group, an aryl group, an alkylaryl group or an arylalkyl group, most preferably an alkyl group , aryl or alkylaryl.

In general, the solubility of (B) in an aqueous medium can vary over a wide range. The solubility of (B) in water is preferably at least 0.2 g/L, more preferably at least 1 g/L, most preferably at least 3 g/L, for example at least 6 at pH 7 at 25 ° C under atmospheric pressure. g/L. The solubility can be determined by evaporating the solvent and measuring the remaining mass in the saturated solution.

According to the present invention, the CMP composition (P) comprises at least one other resist (C) selected from the group consisting of: (C1) acetylene alcohol, and (C2) a salt or adduct of: ( C2a) an amine, and (C2b) a carboxylic acid comprising at least one guanamine moiety.

(P) preferably comprises a mixture of another resist (C) or two other resists (C). (P) preferably contains only one other resist (C).

In general, it can contain varying amounts of (C). The amount of (C) is preferably not more than 10% by weight, more preferably not more than 5% by weight, most preferably not more than 2% by weight, such as not more than 0.8% by weight, based on the total weight of the respective composition. The amount of (C) is preferably at least 0.001 wt%, more preferably at least 0.01 wt%, most preferably at least 0.05 wt%, such as at least 0.1 wt%, based on the total weight of the respective composition.

In general, (C1), (C2a) or (C2b) may be a substituted or unsubstituted compound. In the specific example in which (C1), (C2a) or (C2b) is a substituted compound, the substituent is preferably a halogen atom, a hydroxyl group, an alkoxy group, a thiol group, an amine group, an imido group, a nitro group or a carboxyl group. , an alkylcarboxy group, a sulfonyl group, an alkyl group, an aryl group, an alkylaryl group or an arylalkyl group, more preferably a halogen atom, a hydroxyl group, an alkyl group, an aryl group, an alkylaryl group or an arylalkyl group, most Preferred is an alkyl group, an aryl group or an alkylaryl group.

In general, the solubility of (B) in an aqueous medium can vary over a wide range. The solubility of (B) in water is preferably at least 0.2 g/L, more preferably at least 1 g/L, most preferably at least 3 g/L, for example at least 6 at pH 7 at 25 ° C under atmospheric pressure. g/L. The solubility can be determined by evaporating the solvent and measuring the remaining mass in the saturated solution.

In one embodiment, (C) is ethynyl alcohol (C1). In general, (C1) can be any acetylene alcohol. (C1) is preferably an acetylene alcohol, an acetylene glycol or a substituted or unsubstituted 2-propyn-1-ol containing an ether moiety. More preferably, (C1) is an acetylene alcohol or an acetylene glycol containing an ether moiety.

In the specific example wherein (C1) is an acetylene alcohol containing an ether moiety, (C1) is more preferably an alcohol substituted with (prop-2-ynyloxy), preferably substituted by (prop-2-ynyloxy) a C ₁ -C ₁₅ alcohol, especially a C ₂ -C ₈ alcohol substituted with (prop-2-ynyloxy) and is, for example, 2-(prop-2-ynyloxy)ethanol, 2-(propyl-2 -alkynyloxy)propanol, 2-(prop-2-ynyloxy)butanol or 2-(prop-2-ynyloxy)pentanol.

In the specific example where (C1) is an acetylene glycol, (C1) is more preferably a dihydroxy-substituted C ₄ -C ₁₅ alkyne, most preferably a dihydroxy-substituted C ₄ -C ₈ alkyne, especially At each end of the alkyne chain there is a C ₄ -C ₈ alkyne within the hydroxyl group and is, for example, 2-butyne-1,4-diol.

In the specific example that (C1) is a substituted or unsubstituted 2-propyn-1-ol, (C1) is preferably 1-alkyl-2-propyn-1-ol, 1,1-di Alkyl-2-propyn-1-ol or unsubstituted 2-propyn-1-ol. Examples of 1-alkyl-2-propyn-1-ols are 3-butyn-2-ol or 4-ethyl-1-octyn-3-ol. Examples of 1,1-dialkyl-2-propyn-1-ol are 2-methyl-3-butyn-2-ol, 1-ethynyl-1-cyclohexanol.

In another embodiment, (C) is a salt or adduct of (C2): (C2a)amine, and (C2b) a carboxylic acid comprising at least one guanamine moiety.

In general, (C2) can be any salt or adduct of (C2a) and (C2b). (C2) is preferably a salt of (C2a) and (C2b), more preferably a 1:1 salt of (C2a) and (C2b).

In general, (C2a) can be any amine. (C2a) is preferably trialkanolamines, the alkanol moiety is more preferably trialkanolamines C ₁ -C ₁₅ alkanol, the alkanol moiety is most preferably trialkanolamines the alkanol C ₁ -C ₈ In particular, a trialkanolamine whose alkanol moiety is a C ₂ -C ₅ alkanol, such as triethanolamine (2,2',2"-nitrogen ginseng (ethanol)).

In general, (C2b) can be any carboxylic acid comprising at least one guanamine moiety. The guanamine moiety is separated from the COOH group of the carboxylic acid, that is, the guanamine moiety does not share any atom with the COOH group of the carboxylic acid.

The number of COOH groups contained in (C2b) is preferably from 1 to 8, more preferably from 1 to 4, most preferably from 1 to 2, for example 1. The number of the decylamine moiety contained in (C2b) is preferably from 1 to 8, more preferably from 1 to 4, most preferably from 1 to 2, for example 1.

The guanamine moiety contained in (C2b) may be a primary guanamine (that is, the nitrogen atom of the guanamine is bonded to only one carbon atom), and the secondary guanamine (ie, the nitrogen atom of the guanamine is bonded to two carbons). Atom) or a tertiary decylamine (ie, a nitrogen atom of a guanamine bonded to a 3 carbon atom) moiety. The guanamine moiety contained in (C2b) is preferably a secondary or tertiary guanamine moiety, more preferably a secondary guanamine moiety.

(C2b) is preferably a C ₂ to C ₄₀ carboxylic acid comprising at least one guanamine moiety, more preferably a C ₂ to C ₂₅ carboxylic acid, most preferably a C ₃ to C ₁₅ carboxylic acid, especially C ₃ to C ₈ A carboxylic acid such as a C ₄ to C ₆ carboxylic acid. In this regard, the longest main alkyl chain from the carbon atom of the COOH group to the carbon atom of the guanamine moiety is related to the number of measured carbon atoms (C _n ), wherein the number C _n includes the carbon atom of the COOH group and the guanamine Part of the carbon atom.

(C2b) is preferably an unsaturated carboxylic acid comprising at least one guanamine moiety, more preferably an aryl group or an α,β-unsaturated carboxylic acid, most preferably benzoic acid, 2-butenoic acid or 2-pentenoic acid. .

In another embodiment, (C2b) is preferably an unsaturated carboxylic acid comprising a guanamine moiety or an unsaturated monocarboxylic acid comprising at least one guanamine moiety, more preferably an unsaturated monocarboxylic acid comprising a guanamine moiety. The acid is preferably an unsaturated C ₃ to C ₁₅ monocarboxylic acid comprising a guanamine moiety, especially an α,β-unsaturated C ₃ to C ₈ carboxylic acid or a substituted by (alkylamino)carbonyl group ( Alkylamino)carbonyl substituted benzoic acid, for example 4-[(2-ethylhexyl)amino]-4-oxo-isocrotonate or 2-[[(2-ethylhexyl)methylamino) ]carbonyl]-benzoic acid.

According to the invention, the CMP compositions (P) and (Q) comprise at least one oxidizing agent (D), preferably comprising an oxidizing agent. In general, the oxidizing agent is a compound capable of oxidizing one of the layers of the substrate to be polished or the substrate to be polished. (D) is preferably a full type of oxidant. (D) More preferably, it is a peroxide, a peroxosulfate, a perchlorate, a perbromate, a periodate, a permanganate or a derivative thereof. (D) is preferably a peroxide or peroxosulfate. (D) is especially a peroxide. For example, (D) is hydrogen peroxide.

In general, it can contain a varying amount of (D). The amount of (D) is preferably not more than 20% by weight, more preferably not more than 10% by weight, most preferably not more than 5% by weight, such as not more than 2% by weight, based on the total weight of the respective composition. The amount of (D) is preferably at least 0.05 wt%, more preferably at least 0.1 wt%, most preferably at least 0.5 wt%, such as at least 1 wt%, based on the total weight of the respective composition.

According to the invention, the CMP compositions (P) and (Q) comprise at least one interlinking agent (E), for example comprising a complexing agent. In general, the intercalating agent is a compound capable of aligning ions of one of the layers of the substrate to be polished or the substrate to be polished. (E) is preferably a carboxylic acid having at least two COOH groups, an N-containing carboxylic acid, an N-containing sulfonic acid, an N-containing sulfuric acid, an N-containing phosphonic acid, an N-containing phosphoric acid or a salt thereof. (E) More preferably, it is a carboxylic acid having at least two COOH groups, an N-containing carboxylic acid or a salt thereof. (E) is preferably an amino acid or a salt thereof. For example, (E) is glycine, serine, alanine, histidine or a salt thereof.

In general, it can contain a varying amount of (E). Corresponding composition The amount of (E) is preferably not more than 20% by weight, more preferably not more than 10% by weight, most preferably not more than 5% by weight, for example, not more than 2% by weight. The amount of (E) is preferably at least 0.001 wt%, more preferably at least 0.01 wt%, most preferably at least 0.08 wt%, such as at least 0.5 wt%, based on the total weight of the respective composition.

According to the invention, the CMP compositions (P) and (Q) contain an aqueous medium (F). (F) may be an aqueous medium or a mixture of different types of aqueous medium.

In general, the aqueous medium (F) can be any medium containing water. The aqueous medium (F) is preferably a mixture of water and a water-miscible organic solvent (for example, an alcohol, preferably a C ₁ to C ₃ alcohol or an alkylene glycol derivative). The aqueous medium (F) is more preferably water. The aqueous medium (F) is preferably deionized water.

If the amount of the components other than (F) is a total of x% by weight of the CMP composition, the amount of (F) is (100-x)% by weight of the CMP composition.

According to the invention, the CMP composition (Q) contains a strong resist (G) which is capable of strongly reducing the thermal static etch rate (metal-hSER) of the surface of the metal to be ground in such a way that it is at 0.001 mol/L (G) At a concentration, the metal-hSER of the reference composition (R2) is reduced by at least 75% compared to the reference composition (R1), wherein (R1) is the same as the CMP composition (Q) but does not contain (G) and (H) And (R2) is the same as the CMP composition (Q) but does not contain (H).

(G) The metal-hSER can be strongly reduced in such a manner that at a concentration of 0.001 mol/L (G), the metal-hSER of (R2) is preferably at least 78% lower than (R1), more preferably at least 81. %, optimally at least 84%, such as at least 87%.

In a specific example where the surface of the metal to be polished is a copper surface, (G) can strongly reduce the thermal static etch rate (copper-hSER) of the copper surface in such a manner that at a concentration of 0.001 mol/L (G), (R2) The copper-hSER is reduced by at least 75%, preferably by at least 78%, more preferably by at least 81%, optimally by at least 85%, such as at least 90%, compared to (R1).

In general, it can contain a varying amount of (G). The amount of (G) is preferably not more than 4% by weight, more preferably not more than 1% by weight, most preferably not more than 0.5% by weight, such as not more than 0.2% by weight, based on the total weight of the respective composition. The amount of (G) is preferably at least 0.0005 wt%, more preferably at least 0.005 wt%, most preferably at least 0.01 wt%, such as at least 0.05 wt%, based on the total weight of the respective composition.

In general, (G) can have any chemical properties. (G) is preferably a heterocyclic compound. (G) more preferably pyrrole, imidazole, pyrazole, triazole, tetrazole, pyridine, hydrazine Pyrimidine, pyridyl ,three Thiazole, thiadiazole, thiophene Or a derivative thereof. (G) is preferably imidazole, pyrazole, triazole, tetrazole or a derivative thereof. (G) is especially a triazole or a derivative thereof. For example, (G) is 1,2,3-triazole, 1,2,4-triazole, benzotriazole or tolyltriazole.

According to the present invention, the CMP composition (Q) contains a weak resist (H) capable of weakly lowering the metal-hSER in such a manner that at a concentration of 0.001 mol/L (H), the reference composition (R3) The metal-hSER is reduced by no more than 55% compared to the reference composition (R1), wherein (R1) is the same as the CMP composition (Q) but does not contain (G) and (H), and the (R3) and CMP composition ( Q) Same but not (G).

(H) The metal-hSER can be weakly reduced as follows: at a concentration of 0.001 mol/L (H), the metal-hSER of (R3) and the reference composition Preferably, the reduction of the substance (R1) is not more than 50%, more preferably not more than 45%, most preferably not more than 35%, for example not more than 25%.

In a specific example where the surface of the metal to be polished is a copper surface, (H) can weakly reduce the copper-hSER in such a manner that the copper-hSER of (R3) is reduced by no more than 55% compared to the reference composition (R1), Preferably no more than 50%, more preferably no more than 45%, most preferably no more than 35%, such as no more than 25%.

In general, it can contain a varying amount of (H). The amount of (H) is preferably not more than 10% by weight, more preferably not more than 5% by weight, most preferably not more than 2% by weight, such as not more than 0.8% by weight, based on the total weight of the respective composition. The amount of (H) is preferably at least 0.001 wt%, more preferably at least 0.01 wt%, most preferably at least 0.05 wt%, such as at least 0.1 wt%, based on the total weight of the respective composition.

In general, (H) can have any chemical properties. In a specific example, (H) is preferably an acetylene alcohol, more preferably an acetylene alcohol or an acetylene glycol containing an ether moiety, and most preferably a C ₁ -C ₁₅ alcohol substituted with a (prop-2-ynyloxy) group. Or a dihydroxy-substituted C ₄ -C ₈ alkyne such as 2-(prop-2-ynyloxy)ethanol, 2-(prop-2-ynyloxy)propanol, 2-(prop-2-yne) Oxy)butanol, 2-(prop-2-ynyloxy)pentanol or 2-butyne-1,4-diol. In another embodiment, (H) is preferably a salt or adduct of an amine with a carboxylic acid comprising at least one guanamine moiety, more preferably a salt of a trialkanolamine with a carboxylic acid comprising a guanamine moiety or The adduct, preferably a salt or adduct of a trialkanolamine with an unsaturated monocarboxylic acid comprising a guanamine moiety, such as triethanolamine (2,2',2"-nitrogen ginseng (ethanol)) 4-[(2-ethylhexyl)amino]-4-oxo-isocrotonate salt or adduct, or triethanolamine and 2-[[(2-ethylhexyl)methylamino]carbonyl a salt or adduct of benzoic acid.

Properties of CMP compositions (P) and (Q) (such as stability and research) Grinding performance) can depend on the pH of the corresponding composition. The pH of the composition used or the composition according to the invention is preferably in the range of 3 to 10, more preferably in the range of 4.5 to 8, and most preferably in the range of 5.5 to 7.

The CMP composition used or the CMP composition according to the present invention may also contain various other additives, including, but not limited to, pH adjusters, stabilizers, surfactants, and the like, as necessary. Such other additives are, for example, commonly used additives in CMP compositions and are therefore known to those skilled in the art. This addition can, for example, stabilize the dispersion, or improve the polishing performance or selectivity between different layers.

If an additive is present, it may contain varying amounts of the additive. The amount of the additive is preferably not more than 10% by weight, more preferably not more than 1% by weight, most preferably not more than 0.1% by weight, such as not more than 0.01% by weight, based on the total weight of the respective composition. The amount of the additive is preferably at least 0.0001% by weight, more preferably at least 0.001% by weight, most preferably at least 0.01% by weight, such as at least 0.1% by weight, based on the total weight of the respective composition.

For the following specific examples, all concentration ranges or concentrations indicated in wt% (by weight) are based on the total weight of the respective compositions, unless otherwise stated.

According to a specific example, the CMP composition (P) comprises: (A) cerium oxide particles in a concentration of 0.01 to 2 wt%, (B) a triazole or a derivative thereof as a resist, having a concentration of 0.005 to 1 wt%, (C) another resist selected from the group consisting of (C1) acetylene alcohols, and (C2) a (C2a)amine and (C2b) a salt or adduct of a carboxylic acid comprising a guanamine moiety in a total concentration of from 0.01 to 5 wt%, (D) a full-type oxidant having a concentration of 0.05 to 10 wt% (E) a complexing agent selected from the group consisting of a carboxylic acid having at least two COOH groups, an N-containing carboxylic acid, an N-containing sulfonic acid, an N-containing sulfuric acid, an N-containing phosphonic acid, an N-containing phosphoric acid or a salt thereof, It has a concentration of 0.01 to 5 wt%, and (F) an aqueous medium.

According to another specific example, the CMP composition (P) comprises: (A) cerium oxide particles in a concentration of 0.01 to 2 wt%, (B) a triazole or a derivative thereof as a resist, having a concentration of 0.005 Up to 1 wt%, (C) another resist which is (C1) an acetylene alcohol containing an ether moiety in a concentration of 0.01 to 5 wt%, (D) a peroxide or peroxysulfate as an oxidizing agent, a concentration of 0.05 to 10 wt%, (E) a complexing agent selected from the group consisting of a carboxylic acid having at least two COOH groups, an N-containing carboxylic acid, an N-containing sulfonic acid, an N-containing sulfuric acid, an N-containing phosphonic acid, an N-containing phosphoric acid Or a group of salts thereof, having a concentration of 0.01 to 5 wt%, and (F) an aqueous medium.

According to another specific example, the CMP composition (P) comprises: (A) cerium oxide particles in a concentration of 0.01 to 2 wt%, (B) a triazole or a derivative thereof as a resist, having a concentration of 0.005 Up to 1 wt%, (C) another resist which is (C1) acetylene glycol at a concentration of 0.01 to 5 wt%, (D) as an oxidant peroxide or peroxosulfate, at a concentration of 0.05 Up to 10 wt%, (E) a complexing agent selected from the group consisting of a carboxylic acid having at least two COOH groups, an N-containing carboxylic acid, an N-containing sulfonic acid, an N-containing sulfuric acid, an N-containing phosphonic acid, an N-containing phosphoric acid or a salt thereof A group consisting of a concentration of 0.01 to 5 wt%, and (F) an aqueous medium.

According to another specific example, the CMP composition (P) comprises: (A) cerium oxide particles in a concentration of 0.01 to 2 wt%, (B) a triazole or a derivative thereof as a resist, having a concentration of 0.005 Up to 1 wt%, (C) another resist which is a salt or adduct of (C2): (C2a) trialkanolamine, and (C2b) an unsaturated carboxy group containing at least one guanamine moiety An acid having a concentration of 0.01 to 5 wt%, (D) a peroxide or peroxosulfate as an oxidizing agent at a concentration of 0.05 to 10 wt%, (E) a complexing agent selected from the group consisting of having at least two COOH groups a group consisting of a carboxylic acid, an N-containing carboxylic acid, an N-containing sulfonic acid, an N-containing sulfuric acid, an N-containing phosphonic acid, an N-containing phosphoric acid or a salt thereof, in a concentration of 0.01 to 5 wt%, and (F) Aqueous medium.

According to another specific example, the CMP composition (P) comprises: (A) cerium oxide particles at a concentration of 0.01 to 2 wt%, (B) 1,2,3-triazole as a resist, 1, 2,4-triazole, benzotriazole or tolyltriazole at a concentration of 0.005 to 1 wt%, (C) another resist which is (C1) via (prop-2-ynyloxy) The substituted alcohol has a concentration of 0.01 to 5 wt%, (D) a peroxide as an oxidizing agent, and a concentration of 0.05 to 10 wt%, (E) a carboxylic acid having at least two COOH groups as a crosslinking agent, The N carboxylic acid or a salt thereof has a concentration of 0.01 to 5 wt%, and (F) an aqueous medium.

According to another specific example, the CMP composition (P) comprises: (A) cerium oxide particles at a concentration of 0.01 to 2 wt%, (B) 1,2,3-triazole as a resist, 1, 2,4-triazole, benzotriazole or tolyltriazole at a concentration of 0.005 to 1 wt%, (C) another resist which is a salt or adduct of (C2) or less (C2a) a concentration of a trialkanolamine, and (C2b) an α,β-unsaturated C ₃ to C ₈ carboxylic acid substituted with an (alkylamino)carbonyl group, or a benzoic acid substituted with an (alkylamino)carbonyl group, 0.01 to 5 wt%, (D) a peroxide as an oxidizing agent at a concentration of 0.05 to 10 wt%, (E) a carboxylic acid having at least two COOH groups as a crosslinking agent, an N-containing carboxylic acid or The salt has a concentration of 0.01 to 5 wt%, and (F) an aqueous medium.

Methods of preparing CMP compositions are generally known. These methods are applicable to the preparation of the CMP compositions of the present invention. This can be carried out by dispersing or dissolving the components (A) and (B) described above in an aqueous medium (C), preferably water, and optionally by adding an acid, a base, A buffer or pH adjuster to adjust the pH. To accomplish this, conventional and standard mixing methods and mixing devices (such as stirred vessels, high shear impellers, ultrasonic mixers, homogenizer nozzles or countercurrent mixers) can be used.

The CMP composition (P) is preferably prepared by dispersing the particles (A) and dispersing and/or dissolving the components (B), (C), (D) and (E) in the aqueous medium (F). . The CMP composition (Q) is preferably prepared by dispersing the particles (A) and dispersing and/or dissolving the components (G), (H), (D) and (E) in the aqueous medium (F). .

Grinding methods are generally known and can be carried out by certain methods and equipment under conditions commonly used for CMP in the fabrication of wafers having integrated circuits. There are no restrictions on the equipment that can be used to perform the grinding process.

As is known in the art, a typical apparatus for a CMP process consists of a rotating platen covered with a polishing pad. Orbital grinders are also used. The wafer is mounted on a carrier or chuck. The machined surface of the wafer faces the polishing pad (single-sided grinding method). A retaining ring secures the wafer to a horizontal position.

Below the carrier, the larger diameter platen is also positioned generally horizontally and presents a surface that is parallel to the surface of the wafer to be polished. The polishing pad on the platen is in contact with the wafer surface during the planarization process.

To create a material loss, the wafer is pressed onto the polishing pad. The carrier and the platen are typically rotated about respective axes that extend perpendicularly from the carrier and the platen. The rotating carrier shaft can remain fixed in position relative to the rotating platen or can oscillate horizontally relative to the platen. The direction of rotation of the carrier is typically (but not necessarily) the same as the direction of rotation of the platen. The rotational speed of the carrier and the platen is substantially (but not necessarily) set to a different value. During the CMP process of the present invention, the CMP composition of the present invention is typically applied to a polishing pad in a continuous stream or in a drop-wise manner. The platen temperature is usually set to a temperature of 10 ° C to 70 ° C.

The load on the wafer can be applied by, for example, a steel plate covered with a cushion (commonly referred to as a substrate film). If more advanced equipment is used, the wafer is pressed onto the polishing pad using a flexible diaphragm loaded with air or nitrogen pressure. Since the downward pressure distribution on the wafer is more uniform than the downward pressure distribution of the carrier having the hard plate design, the diaphragm carrier is preferred for low down force methods when using a hard abrasive pad. Carriers having the option of controlling the pressure distribution across the wafer can also be used in accordance with the present invention. These carriers are typically designed to have several different chambers that can be loaded independently of one another.

For further details, reference is made to WO 2004/063301 A1, in particular paragraph 16 [0036] to page 18 [0040] and Figure 2.

By using the CMP method of the present invention and/or using the CMP compositions (P) and (Q) of the present invention, a wafer having an integrated circuit including a metal layer having excellent functionality can be obtained.

The CMP compositions (P) and (Q) of the present invention can be used as a ready-to-use slurry in a CMP process which has a long shelf life and exhibits a long-term stable particle size distribution. Therefore it is easy to handle and store. It demonstrates excellent grinding performance, especially In terms of material removal rate (MRR), static etch rate (SER), and selectivity. For example, when grinding a substrate containing a copper layer, a high ratio of high MRR, low metal-hSER, low metal-cSER, low metal-hMSER, MRR to metal-hSER, and high ratio of MRR to metal-cSER can be obtained. , a combination of a high ratio of MRR to metal-hMSER. Since the amounts of the components of the CMP compositions (P) and (Q) are reduced to a minimum, the CMP compositions (P) and (Q) can be used in a cost effective manner.

Examples and comparative examples Analytical method

The pH was measured by a pH electrode (Schott, Blue line, pH 0-14/-5...100 ° C / 3 mol / L sodium chloride).

The metal-hSER was determined by dipping a 1 x 1 吋 [= 2.54 x 2.54 cm] metal test piece into the corresponding composition at 60 ° C for 5 minutes and measuring the mass loss before and after the immersion.

The metal-cSER was determined by dipping a 1 × 1 吋 [= 2.54 × 2.54 cm] metal test piece into the corresponding composition at 25 ° C for 5 minutes and measuring the mass loss before and after the immersion.

The metal-hMSER was determined by immersing a 1 x 1 吋 [= 2.54 x 2.54 cm] metal test piece into the corresponding composition at 60 ° C for 5 minutes and adding 500 ppm of a metal salt (for example, metal). Nitrate) The mass loss before and after the impregnation is measured by mimicking the metal ions released in the grinding method.

The 1×1 吋[=2.54×2.54 cm] copper test piece was immersed in the corresponding composition at 25 ° C for 5 minutes and the mass loss before and after the immersion measurement was measured. Lost to determine the cold static etch rate (Cu-cSER) of the copper layer.

The thermal static etch rate of the copper layer was determined by immersing a 1×1 吋 [=2.54×2.54 cm] copper test piece into the corresponding composition at 60 ° C for 5 minutes and measuring the mass loss before and after the immersion. (Cu-hSER).

The hot copper ion static etch rate (Cu-hCSER) for the copper layer was determined by immersing a 1 x 1 吋 [= 2.54 x 2.54 cm] copper test piece into the corresponding composition for 5 minutes at 60 ° C. And after adding 500 ppm of Cu(NO ₃ ) ₂ to mimic the copper ions released in the grinding method, the mass loss before and after the impregnation was measured.

General procedure for CMP experiments

The first trend of the formulation was evaluated on a 2 吋 [= 5.08 cm] copper plate level using a Bühler bench grinder. For other evaluations and confirmations, use a 200 mm Strasbaugh 6EC grinder (grinding time 60 seconds).

For bench-top evaluation, select the following parameters: Powerpro 5000 Bühler.DF=40 N, table speed 150 rpm, platen speed 150 rpm, slurry flow rate 200 ml/min, adjustment time 20 seconds, grinding time 1 minute, IC1000 pad , diamond adjuster (3 M).

The conditioning pad was cleaned several times before the new type of CMP composition was used for CMP. For the determination of the removal rate, at least 3 wafers were ground and the data obtained from the experiments were averaged.

The CMP composition was agitated in a local supply station.

The material removal rate (MRR) of the 2 吋 [= 5.08 cm] disk ground by the CMP composition was determined by the weight difference of the coated wafer before and after CMP using a Sartorius LA310 S balance. Since the density of the abrasive material (copper is 8.94 g/cm ³ ) and the surface area are known, the weight difference can be converted into a film thickness difference. The material removal rate value is obtained by dividing the film thickness difference by the milling time.

Inorganic particles, organic particles, mixtures or composites thereof (A)

Silicon dioxide particles are used as particles (A) is the NexSil ^TM (Nyacol) type. NexSil ^TM 85K colloidal silicon dioxide is stabilized by potassium, the typical particle size of 50 nm and a surface area of typically 55 m ² / g. NexSil ^TM 5 to stabilize the colloidal silicon dioxide through a sodium, a typical particle size of 6 nm and a typical surface area of 450 m ² / g.

The melamine particles used as the particles (A) are formed in the solution by adding melamine to the slurry. Particles typically have a broad particle size distribution, but are not limited to large particle size distributions. The melamine can be milled or mixed into an aqueous medium by a dissolution method known to those skilled in the art.

Other resist (C):

2-(prop-2-ynyloxy)propanol

2-(prop-2-ynyloxy)pentanol

2-butyne-1,4-diol

FC1 = triethanolamine (2,2',2"-nitrogen ginseng (ethanol)) and 4-[(2-ethylhexyl)amino]-4-oxo-isocrotonate salt or adduct

FC2 = a salt or adduct of triethanolamine (2,2,2"-nitrogen (ethanol)) with 2-[[(2-ethylhexyl)methylamino]carbonyl]-benzoic acid.

Examples 1 to 8 (composition of the present invention) and Comparative Examples V1 to V4 (comparative composition)

An aqueous dispersion containing the components as listed in Tables 1 and 2 was prepared to provide the CMP compositions (P) of Examples 1 to 6 and Comparative Examples V1 to V2. For all of these embodiments, the pH was adjusted to 6 with KOH or HNO _3.

An aqueous dispersion containing the components as listed in Table 2 was prepared, and the CMP compositions (Q) of Examples 7 to 8 and Comparative Examples V3 to V4 were provided. For all of these embodiments, the pH was adjusted to 6 with KOH or HNO _3.

The data on the polishing performance of the CMP compositions (P) of Examples 1 to 6 and Comparative Examples V1 to V2 are shown in Table 1.

The data on the polishing performance of the CMP compositions (Q) of Examples 7 to 8 and Comparative Examples V3 to V4 are given in Table 2.

Table 2: Compositions of Examples 7 to 8 and Comparative Examples V3 to V4, Cu-cSER, Cu-hSER, Cu-hCSER, pH, and material removal rate in the copper CMP method using the compositions ( MRR) wherein the aqueous medium (F) is deionized water.

These embodiments of the CMP composition of the present invention improve polishing performance.

Figure 1 shows Cu-hSER for different reference compositions: y1 = Cu-hSER (Å/min), x1 = concentration of resist in the reference composition

In Figure 1 the axis y1 situated diamond (which by the arrow (R1a) associated) denotes comprising ^{0.2 wt% NexSil TM 85K, 0.5} wt% glycine, 1 wt% H ₂ O ₂ and has a pH of 6 with reference to Composition (R1a).

In Figure 1 the other diamonds represent comprising ^{0.2 wt% NexSil TM 85K, 0.5} wt% glycine, 1 wt% H ₂ O ₂ and various concentrations of 1,2,4-triazole and a pH of 6 with reference to the composition (R2a), wherein the concentration of 1,2,4-triazole is specified on the x1 axis.

Figure 1 represents the triangle containing ^{0.2 wt% NexSil TM 85K, 0.5} wt% glycine, 1 wt% H ₂ O ₂ and varying concentrations of a benzotriazole and a pH of reference composition (R2b) 6 of wherein The concentration of benzotriazole is specified on the x1 axis.

The circle in FIG. 1 showing containing ^{0.2 wt% NexSil TM 85K, 0.5} wt% glycine, 1 wt% H ₂ O ₂ and various concentrations of tolyltriazole and the pH of the reference composition (R2c) 6, the The concentration of tolyltriazole is specified on the x1 axis.

In the FIG. 1 comprises a square represents ^{0.2 wt% NexSil TM 85K, 0.5} wt% glycine, 1 wt% H ₂ O ₂ and various concentrations of 2- (prop-2-ynyloxy) propanol and pH 6 Reference composition (R2d) wherein the concentration of 2-(prop-2-ynyloxy)propanol is specified on the x1 axis.

Claims (18)

A chemical mechanical polishing ("CMP") composition (P) comprising (A) inorganic particles, organic particles or a mixture or composite thereof, and (B) at least one N-heterocyclic compound as a resist, (C) at least one other resist which is (C2) a salt or an adduct (C2a) amine, and (C2b) a carboxylic acid comprising a guanamine moiety, (D) at least one oxidizing agent, (E) At least one miscible agent, and (F) an aqueous medium, wherein the CMP composition has a pH in the range of 3 to 7. The CMP composition of claim 1, wherein (B) is imidazole, pyrazole, triazole, tetrazole or a derivative thereof. The CMP composition of claim 2, wherein (B) is a triazole or a derivative thereof. The CMP composition according to any one of claims 1 to 2, wherein (C2a) is a trialkanolamine. The CMP composition according to any one of the preceding claims, wherein (C2b) is an unsaturated monocarboxylic acid comprising a guanamine moiety. The CMP composition according to any one of claims 1 to 2, wherein (A) is a cerium oxide particle. The CMP composition according to any one of claims 1 to 2, wherein (D) is a peroxy compound. The CMP composition according to any one of claims 1 to 2, wherein (E) is a carboxylic acid having at least two COOH groups, an N-containing carboxylic acid, an N-containing sulfonic acid, an N-containing sulfuric acid, Containing N-phosphonic acid, N-containing phosphoric acid or a salt thereof. The CMP composition of claim 1, comprising (A) cerium oxide particles in a concentration of 0.01 to 2% by weight, (B) a triazole or a derivative thereof as a resist, having a concentration of 0.005 to 1% by weight, (C) another resist which is a salt of (C2) or an adduct (C2a) trialkanolamine, and (C2b) an unsaturated carboxylic acid containing at least one guanamine moiety, a concentration of 0.01 to 5 wt%, (D) a peroxide or peroxosulfate as an oxidizing agent at a concentration of 0.05 to 10% by weight, (E) a complexing agent selected from the group consisting of carboxylic acids having at least two COOH groups, A group comprising an N-carboxylic acid, an N-containing sulfonic acid, an N-containing sulfuric acid, an N-containing phosphonic acid, an N-containing phosphoric acid or a salt thereof, in a concentration of 0.01 to 5 wt%, and (F) an aqueous medium. A method of producing a semiconductor comprising chemical mechanical polishing of a metal-containing substrate in the presence of a CMP composition as defined in any one of claims 1 to 9. A use of a CMP composition as defined in any one of claims 1 to 9 for polishing any substrate used in the semiconductor industry. A chemical mechanical polishing ("CMP") composition (P) comprising (A) inorganic particles, organic particles or a mixture or composite thereof, and (B) at least one N-heterocyclic compound as a resist, (C) at least one other resist which is (C1) (prop-2-ynyloxy) substituted alcohol, (D) at least one oxidizing agent, (E) at least one complexing agent, and (F) an aqueous medium Wherein the CMP composition has a pH in the range of 3 to 7. A CMP composition according to claim 12, wherein (B) is imidazole, pyrazole, triazole, tetrazole or a derivative thereof. A CMP composition according to claim 13 wherein (B) is a triazole or a derivative thereof. The CMP composition according to any one of claims 12 to 13, wherein (A) is a cerium oxide particle. A method of manufacturing a semiconductor device comprising chemical mechanical polishing of a metal-containing substrate in the presence of a CMP composition as defined in any one of claims 12 to 15. A use of a CMP composition as defined in any one of claims 12 to 15 for polishing any substrate used in the semiconductor industry. A use of a CMP composition (Q) comprising (A) inorganic particles, organic particles or a mixture or composite thereof, (D) at least one oxidizing agent, (E) at least one crosslinking agent, (F) an aqueous medium, (G) a strong resist capable of strongly reducing the thermal static etching rate of the surface of the metal to be polished in the following manner (metal - hSER): at a concentration of 0.001 mol/L (G), the metal-hSER of the reference composition (R2) is reduced by at least 75% compared to the reference composition (R1), (H) a weak resist capable of The metal-hSER is weakly reduced in the following manner: at a concentration of 0.001 mol/L (H), the metal-hSER of the reference composition (R3) is reduced by no more than 55% compared to the reference composition (R1). Used for chemical mechanical polishing of metal-containing substrates, where (R1) is the same as CMP composition (Q) but does not contain (G) and (H), and (R2) is the same as but not containing CMP composition (Q) (H) And (R3) is the same as the CMP composition (Q) but does not contain (G), wherein the CMP composition has a pH in the range of 3 to 7.